ATE323327T1 - Herstellungsmethode für eine elekttronische anordnung mit organischen schichten - Google Patents

Herstellungsmethode für eine elekttronische anordnung mit organischen schichten

Info

Publication number
ATE323327T1
ATE323327T1 AT99970844T AT99970844T ATE323327T1 AT E323327 T1 ATE323327 T1 AT E323327T1 AT 99970844 T AT99970844 T AT 99970844T AT 99970844 T AT99970844 T AT 99970844T AT E323327 T1 ATE323327 T1 AT E323327T1
Authority
AT
Austria
Prior art keywords
layer
inorganic material
openings
organic
resist
Prior art date
Application number
AT99970844T
Other languages
English (en)
Inventor
Petrus M Meijer
Bartholome S Manders
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE323327T1 publication Critical patent/ATE323327T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/086—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving buried masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Drying Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
AT99970844T 1998-11-18 1999-11-02 Herstellungsmethode für eine elekttronische anordnung mit organischen schichten ATE323327T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98203879 1998-11-18

Publications (1)

Publication Number Publication Date
ATE323327T1 true ATE323327T1 (de) 2006-04-15

Family

ID=8234345

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99970844T ATE323327T1 (de) 1998-11-18 1999-11-02 Herstellungsmethode für eine elekttronische anordnung mit organischen schichten

Country Status (7)

Country Link
US (1) US6309801B1 (de)
EP (1) EP1064674B1 (de)
JP (1) JP2002530881A (de)
KR (1) KR100634904B1 (de)
AT (1) ATE323327T1 (de)
DE (1) DE69930839T2 (de)
WO (1) WO2000031775A2 (de)

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US6562715B1 (en) 2000-08-09 2003-05-13 Applied Materials, Inc. Barrier layer structure for copper metallization and method of forming the structure
JP2003077920A (ja) * 2001-09-04 2003-03-14 Nec Corp 金属配線の形成方法
US6890851B2 (en) * 2003-05-29 2005-05-10 United Microelectronics Corp. Interconnection structure and fabrication method thereof
JP2006261058A (ja) * 2005-03-18 2006-09-28 Sony Corp 有機ｅｌ素子、表示装置、有機ｅｌ素子の製造方法
CN102308671B (zh) 2009-02-10 2015-01-21 松下电器产业株式会社 发光元件的制造方法和发光元件、以及发光装置的制造方法和发光装置
WO2010092796A1 (ja) 2009-02-10 2010-08-19 パナソニック株式会社 発光素子、発光素子を備えた発光装置および発光素子の製造方法
CN102308405B (zh) 2009-02-10 2015-07-08 株式会社日本有机雷特显示器 发光元件、显示装置以及发光元件的制造方法
JP5437736B2 (ja) 2009-08-19 2014-03-12 パナソニック株式会社 有機ｅｌ素子
WO2011161727A1 (ja) 2010-06-24 2011-12-29 パナソニック株式会社 有機ｅｌ素子の製造方法、表示装置、発光装置および紫外光照射装置
CN102473847B (zh) 2010-06-24 2015-01-14 松下电器产业株式会社 有机el元件、显示装置以及发光装置
CN102405687B (zh) * 2010-07-05 2015-02-25 松下电器产业株式会社 有机el显示面板及其制造方法
JP5624141B2 (ja) 2010-07-30 2014-11-12 パナソニック株式会社 有機ｅｌ素子
JP5620494B2 (ja) 2010-08-06 2014-11-05 パナソニック株式会社 発光素子、表示装置、および発光素子の製造方法
JP5677431B2 (ja) 2010-08-06 2015-02-25 パナソニック株式会社 有機ｅｌ素子、表示装置および発光装置
WO2012017492A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 発光素子とその製造方法、および発光装置
JP5612693B2 (ja) 2010-08-06 2014-10-22 パナソニック株式会社 有機ｅｌ素子およびその製造方法
WO2012017486A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 発光素子の製造方法
WO2012017497A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子
WO2012017495A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子およびその製造方法
WO2012017501A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子およびその製造方法
JP5677432B2 (ja) 2010-08-06 2015-02-25 パナソニック株式会社 有機ｅｌ素子、表示装置および発光装置
CN103053041B (zh) 2010-08-06 2015-11-25 株式会社日本有机雷特显示器 有机el元件
WO2012017488A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 発光素子とその製造方法、および発光装置
WO2012017490A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子、表示装置および発光装置
JP5543600B2 (ja) 2010-08-06 2014-07-09 パナソニック株式会社 発光素子、発光素子を備えた発光装置および発光素子の製造方法
WO2012017499A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子
JP5620495B2 (ja) 2010-08-06 2014-11-05 パナソニック株式会社 発光素子、発光素子を備えた発光装置および発光素子の製造方法
CN103283054B (zh) 2011-01-21 2015-12-16 株式会社日本有机雷特显示器 有机el元件
WO2012114648A1 (ja) 2011-02-23 2012-08-30 パナソニック株式会社 有機ｅｌ表示パネルおよび有機ｅｌ表示装置
WO2012114403A1 (ja) 2011-02-25 2012-08-30 パナソニック株式会社 有機ｅｌ表示パネルおよび有機ｅｌ表示装置
WO2012153445A1 (ja) 2011-05-11 2012-11-15 パナソニック株式会社 有機ｅｌ表示パネルおよび有機ｅｌ表示装置
JP6284369B2 (ja) * 2014-01-07 2018-02-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法

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FR2777697B1 (fr) * 1998-04-16 2000-06-09 St Microelectronics Sa Circuit integre avec couche d'arret et procede de fabrication associe

Also Published As

Publication number Publication date
JP2002530881A (ja) 2002-09-17
WO2000031775A2 (en) 2000-06-02
EP1064674A2 (de) 2001-01-03
DE69930839T2 (de) 2007-04-12
KR100634904B1 (ko) 2006-10-17
EP1064674B1 (de) 2006-04-12
US6309801B1 (en) 2001-10-30
DE69930839D1 (de) 2006-05-24
KR20010034203A (ko) 2001-04-25
WO2000031775A3 (en) 2000-10-26

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