DE69930839D1 - Herstellungsmethode für eine elekttronische anordnung mit organischen schichten - Google Patents

Herstellungsmethode für eine elekttronische anordnung mit organischen schichten

Info

Publication number
DE69930839D1
DE69930839D1 DE69930839T DE69930839T DE69930839D1 DE 69930839 D1 DE69930839 D1 DE 69930839D1 DE 69930839 T DE69930839 T DE 69930839T DE 69930839 T DE69930839 T DE 69930839T DE 69930839 D1 DE69930839 D1 DE 69930839D1
Authority
DE
Germany
Prior art keywords
layer
inorganic material
openings
organic
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69930839T
Other languages
English (en)
Other versions
DE69930839T2 (de
Inventor
M Meijer
S Manders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69930839D1 publication Critical patent/DE69930839D1/de
Publication of DE69930839T2 publication Critical patent/DE69930839T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Drying Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69930839T 1998-11-18 1999-11-02 Herstellungsmethode für eine elekttronische anordnung mit organischen schichten Expired - Lifetime DE69930839T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP98203879 1998-11-18
EP98203879 1998-11-18
PCT/EP1999/008341 WO2000031775A2 (en) 1998-11-18 1999-11-02 A method of manufacturing an electronic device comprising two layers of organic-containing material

Publications (2)

Publication Number Publication Date
DE69930839D1 true DE69930839D1 (de) 2006-05-24
DE69930839T2 DE69930839T2 (de) 2007-04-12

Family

ID=8234345

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69930839T Expired - Lifetime DE69930839T2 (de) 1998-11-18 1999-11-02 Herstellungsmethode für eine elekttronische anordnung mit organischen schichten

Country Status (7)

Country Link
US (1) US6309801B1 (de)
EP (1) EP1064674B1 (de)
JP (1) JP2002530881A (de)
KR (1) KR100634904B1 (de)
AT (1) ATE323327T1 (de)
DE (1) DE69930839T2 (de)
WO (1) WO2000031775A2 (de)

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US6562715B1 (en) 2000-08-09 2003-05-13 Applied Materials, Inc. Barrier layer structure for copper metallization and method of forming the structure
JP2003077920A (ja) * 2001-09-04 2003-03-14 Nec Corp 金属配線の形成方法
US6890851B2 (en) * 2003-05-29 2005-05-10 United Microelectronics Corp. Interconnection structure and fabrication method thereof
JP2006261058A (ja) * 2005-03-18 2006-09-28 Sony Corp 有機ｅｌ素子、表示装置、有機ｅｌ素子の製造方法
KR101623227B1 (ko) 2009-02-10 2016-05-20 가부시키가이샤 제이올레드 발광 소자의 제조 방법과 발광 소자 및 발광 장치의 제조 방법과 발광 장치
CN102272970B (zh) 2009-02-10 2014-12-10 松下电器产业株式会社 发光元件、具备发光元件的发光装置以及发光元件的制造方法
EP2398083B1 (de) 2009-02-10 2018-06-13 Joled Inc. Lichtemittierendes element, anzeigevorrichtung und verfahren zur herstellung des lichtemittierenden elements
JP5437736B2 (ja) 2009-08-19 2014-03-12 パナソニック株式会社 有機ｅｌ素子
CN102473847B (zh) 2010-06-24 2015-01-14 松下电器产业株式会社 有机el元件、显示装置以及发光装置
WO2011161727A1 (ja) 2010-06-24 2011-12-29 パナソニック株式会社 有機ｅｌ素子の製造方法、表示装置、発光装置および紫外光照射装置
JP5524954B2 (ja) * 2010-07-05 2014-06-18 パナソニック株式会社 有機ｅｌ表示パネルとその製造方法
JP5624141B2 (ja) 2010-07-30 2014-11-12 パナソニック株式会社 有機ｅｌ素子
WO2012017488A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 発光素子とその製造方法、および発光装置
WO2012017496A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 発光素子、発光素子を備えた発光装置および発光素子の製造方法
WO2012017490A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子、表示装置および発光装置
WO2012017502A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子およびその製造方法
JP5658256B2 (ja) 2010-08-06 2015-01-21 パナソニック株式会社 発光素子とその製造方法、および発光装置
JP5677432B2 (ja) 2010-08-06 2015-02-25 パナソニック株式会社 有機ｅｌ素子、表示装置および発光装置
JP5620494B2 (ja) 2010-08-06 2014-11-05 パナソニック株式会社 発光素子、表示装置、および発光素子の製造方法
JP5612691B2 (ja) 2010-08-06 2014-10-22 パナソニック株式会社 有機ｅｌ素子およびその製造方法
JP5677431B2 (ja) 2010-08-06 2015-02-25 パナソニック株式会社 有機ｅｌ素子、表示装置および発光装置
JP5677437B2 (ja) 2010-08-06 2015-02-25 パナソニック株式会社 有機ｅｌ素子
WO2012017499A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子
WO2012017501A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機ｅｌ素子およびその製造方法
JP5677434B2 (ja) 2010-08-06 2015-02-25 パナソニック株式会社 有機ｅｌ素子
JP5543600B2 (ja) 2010-08-06 2014-07-09 パナソニック株式会社 発光素子、発光素子を備えた発光装置および発光素子の製造方法
JP5543599B2 (ja) 2010-08-06 2014-07-09 パナソニック株式会社 発光素子の製造方法
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JPWO2012153445A1 (ja) 2011-05-11 2014-07-28 パナソニック株式会社 有機ｅｌ表示パネルおよび有機ｅｌ表示装置
JP6284369B2 (ja) * 2014-01-07 2018-02-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法

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Also Published As

Publication number Publication date
ATE323327T1 (de) 2006-04-15
KR20010034203A (ko) 2001-04-25
EP1064674A2 (de) 2001-01-03
US6309801B1 (en) 2001-10-30
EP1064674B1 (de) 2006-04-12
KR100634904B1 (ko) 2006-10-17
WO2000031775A2 (en) 2000-06-02
JP2002530881A (ja) 2002-09-17
WO2000031775A3 (en) 2000-10-26
DE69930839T2 (de) 2007-04-12

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