TW200743238A - Method for forming fine pattern of semiconductor device - Google Patents

Method for forming fine pattern of semiconductor device

Info

Publication number
TW200743238A
TW200743238A TW096100765A TW96100765A TW200743238A TW 200743238 A TW200743238 A TW 200743238A TW 096100765 A TW096100765 A TW 096100765A TW 96100765 A TW96100765 A TW 96100765A TW 200743238 A TW200743238 A TW 200743238A
Authority
TW
Taiwan
Prior art keywords
organic film
organic
mask patterns
underlying layer
semiconductor device
Prior art date
Application number
TW096100765A
Other languages
Chinese (zh)
Other versions
TWI326502B (en
Inventor
Jae-Chang Jung
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200743238A publication Critical patent/TW200743238A/en
Application granted granted Critical
Publication of TWI326502B publication Critical patent/TWI326502B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

A method for forming fine patterns of a semiconductor device includes forming hard mask patterns over an underlying layer. A first organic film is formed over the hard mask patterns. A second organic film is formed over the first organic film. The second organic film is planarized until the first organic film is exposed. An etch-back process is performed on the first organic film until the underlying layer is exposed. The first organic film and the second organic film are etched to form organic mask patterns including the first organic film and the second organic film. Each organic mask pattern is formed between adjacent hard mask patterns. The underlying layer is etched using the hard mask patterns and the organic mask patterns as an etching mask to form an underlying layer pattern.
TW096100765A 2006-05-09 2007-01-09 Method for forming fine pattern of semiconductor device TWI326502B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060041513 2006-05-09
KR1020060131000A KR100835486B1 (en) 2006-05-09 2006-12-20 Method for forming fine patterns of semiconductor devices

Publications (2)

Publication Number Publication Date
TW200743238A true TW200743238A (en) 2007-11-16
TWI326502B TWI326502B (en) 2010-06-21

Family

ID=38898867

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100765A TWI326502B (en) 2006-05-09 2007-01-09 Method for forming fine pattern of semiconductor device

Country Status (3)

Country Link
KR (1) KR100835486B1 (en)
CN (1) CN100517562C (en)
TW (1) TWI326502B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101024712B1 (en) * 2007-12-20 2011-03-24 주식회사 하이닉스반도체 Method for manufacturing semiconductor device
KR100976651B1 (en) * 2008-01-14 2010-08-18 주식회사 하이닉스반도체 Method for forming pattern in semiconductor device
KR100933854B1 (en) * 2008-01-14 2009-12-24 주식회사 하이닉스반도체 Pattern formation method of semiconductor device
KR100939168B1 (en) 2008-02-28 2010-01-28 주식회사 하이닉스반도체 Method for forming a patten of semiconductor device
KR100955681B1 (en) 2008-04-14 2010-05-06 주식회사 하이닉스반도체 Method of fabricating photomask using self assembly molecule
CN101789363B (en) * 2010-03-22 2011-10-26 北京大学 Method for preparing superfine line based on oxidization and chemically mechanical polishing process
CN102903627A (en) * 2011-07-29 2013-01-30 深圳光启高等理工研究院 Masking method for deep etching based on buffer layer
KR101556276B1 (en) * 2012-12-28 2015-09-30 제일모직 주식회사 Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230351B1 (en) 1991-09-18 1999-11-15 윤종용 Pattern forming method
KR970007173B1 (en) * 1994-07-14 1997-05-03 현대전자산업 주식회사 Fine patterning method
KR100307631B1 (en) * 1999-06-01 2001-09-29 윤종용 Method for forming fine patterns of semiconductor device

Also Published As

Publication number Publication date
CN100517562C (en) 2009-07-22
KR100835486B1 (en) 2008-06-04
TWI326502B (en) 2010-06-21
KR20070109787A (en) 2007-11-15
CN101071754A (en) 2007-11-14

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees