ATE220808T1 - Anordnung für eine halbleitervorrichtung mit redundanten elementen - Google Patents

Anordnung für eine halbleitervorrichtung mit redundanten elementen

Info

Publication number
ATE220808T1
ATE220808T1 AT97920417T AT97920417T ATE220808T1 AT E220808 T1 ATE220808 T1 AT E220808T1 AT 97920417 T AT97920417 T AT 97920417T AT 97920417 T AT97920417 T AT 97920417T AT E220808 T1 ATE220808 T1 AT E220808T1
Authority
AT
Austria
Prior art keywords
columns
rows
banks
planes
address
Prior art date
Application number
AT97920417T
Other languages
English (en)
Inventor
Todd A Merritt
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE220808T1 publication Critical patent/ATE220808T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/81—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a hierarchical redundancy scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT97920417T 1996-04-25 1997-04-16 Anordnung für eine halbleitervorrichtung mit redundanten elementen ATE220808T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/637,875 US5706292A (en) 1996-04-25 1996-04-25 Layout for a semiconductor memory device having redundant elements
PCT/US1997/006348 WO1997040444A1 (en) 1996-04-25 1997-04-16 Layout for a semiconductor memory device having redundant elements

Publications (1)

Publication Number Publication Date
ATE220808T1 true ATE220808T1 (de) 2002-08-15

Family

ID=24557721

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97920417T ATE220808T1 (de) 1996-04-25 1997-04-16 Anordnung für eine halbleitervorrichtung mit redundanten elementen

Country Status (8)

Country Link
US (5) US5706292A (de)
EP (1) EP0931288B1 (de)
JP (1) JP3697266B2 (de)
KR (1) KR100392557B1 (de)
AT (1) ATE220808T1 (de)
AU (1) AU2461597A (de)
DE (1) DE69714060T2 (de)
WO (1) WO1997040444A1 (de)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850953B2 (ja) * 1996-07-30 1999-01-27 日本電気株式会社 半導体装置
US5734617A (en) * 1996-08-01 1998-03-31 Micron Technology Corporation Shared pull-up and selection circuitry for programmable cells such as antifuse cells
JP3613622B2 (ja) * 1996-09-27 2005-01-26 株式会社日立製作所 半導体メモリ
US6104209A (en) 1998-08-27 2000-08-15 Micron Technology, Inc. Low skew differential receiver with disable feature
US5953276A (en) * 1997-12-18 1999-09-14 Micron Technology, Inc. Fully-differential amplifier
US6005813A (en) * 1997-11-12 1999-12-21 Micron Technology, Inc. Device and method for repairing a semiconductor memory
US6077211A (en) * 1998-02-27 2000-06-20 Micron Technology, Inc. Circuits and methods for selectively coupling redundant elements into an integrated circuit
US6212482B1 (en) 1998-03-06 2001-04-03 Micron Technology, Inc. Circuit and method for specifying performance parameters in integrated circuits
US6163863A (en) * 1998-05-22 2000-12-19 Micron Technology, Inc. Method and circuit for compressing test data in a memory device
US6061291A (en) * 1998-07-14 2000-05-09 Winbond Electronics Corporation America Memory integrated circuit supporting maskable block write operation and arbitrary redundant column repair
JP3880210B2 (ja) * 1998-08-04 2007-02-14 エルピーダメモリ株式会社 半導体装置
US6199177B1 (en) * 1998-08-28 2001-03-06 Micron Technology, Inc. Device and method for repairing a semiconductor memory
US6910152B2 (en) * 1998-08-28 2005-06-21 Micron Technology, Inc. Device and method for repairing a semiconductor memory
US6246615B1 (en) 1998-12-23 2001-06-12 Micron Technology, Inc. Redundancy mapping in a multichip semiconductor package
JP3866451B2 (ja) * 1999-06-24 2007-01-10 Ｎｅｃエレクトロニクス株式会社 冗長プログラム回路及びこれを内蔵した半導体記憶装置
US6163489A (en) 1999-07-16 2000-12-19 Micron Technology Inc. Semiconductor memory having multiple redundant columns with offset segmentation boundaries
JP3844917B2 (ja) * 1999-07-26 2006-11-15 株式会社東芝 半導体記憶装置
US6745354B2 (en) * 2000-02-02 2004-06-01 Broadcom Corporation Memory redundancy implementation
US6480990B1 (en) * 2000-05-01 2002-11-12 Hewlett-Packard Company Application specific integrated circuit with spaced spare logic gate subgroups and method of fabrication
US6314030B1 (en) 2000-06-14 2001-11-06 Micron Technology, Inc. Semiconductor memory having segmented row repair
US6496425B1 (en) 2000-08-21 2002-12-17 Micron Technology, Inc Multiple bit line column redundancy
US6504768B1 (en) 2000-08-25 2003-01-07 Micron Technology, Inc. Redundancy selection in memory devices with concurrent read and write
US6445625B1 (en) 2000-08-25 2002-09-03 Micron Technology, Inc. Memory device redundancy selection having test inputs
US7257129B2 (en) * 2000-11-22 2007-08-14 Silicon Image Memory architecture with multiple serial communications ports
US6904552B2 (en) * 2001-03-15 2005-06-07 Micron Technolgy, Inc. Circuit and method for test and repair
US20020133769A1 (en) * 2001-03-15 2002-09-19 Cowles Timothy B. Circuit and method for test and repair
US6542418B2 (en) 2001-06-26 2003-04-01 International Business Machines Corporation Redundant memory array having dual-use repair elements
JP5119563B2 (ja) * 2001-08-03 2013-01-16 日本電気株式会社 不良メモリセル救済回路を有する半導体記憶装置
US7111193B1 (en) * 2002-07-30 2006-09-19 Taiwan Semiconductor Manufacturing Co. Ltd. Semiconductor memory having re-configurable fuse set for redundancy repair
JP2004110870A (ja) * 2002-09-13 2004-04-08 Fujitsu Ltd 半導体記憶装置
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
KR100484254B1 (ko) * 2002-10-31 2005-04-22 주식회사 하이닉스반도체 반도체 메모리 장치의 리던던시 회로 및 그를 이용한 페일구제방법
US7032143B1 (en) * 2002-11-05 2006-04-18 William Kenneth Waller Memory data path circuit
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7174477B2 (en) * 2003-02-04 2007-02-06 Micron Technology, Inc. ROM redundancy in ROM embedded DRAM
US7835520B2 (en) * 2003-02-20 2010-11-16 Zoran Corporation Unique identifier per chip for digital audio/video data encryption/decryption in personal video recorders
US6868019B2 (en) * 2003-07-02 2005-03-15 Micron Technology, Inc. Reduced power redundancy address decoder and comparison circuit
US7415641B1 (en) * 2003-11-05 2008-08-19 Virage Logic Corp. System and method for repairing a memory
KR100587076B1 (ko) 2004-04-28 2006-06-08 주식회사 하이닉스반도체 메모리 장치
US7162825B2 (en) * 2004-05-18 2007-01-16 Calculations Made Simple Method and means for adjusting the scope of a firearm
US20070259706A1 (en) * 2004-08-25 2007-11-08 Wms Gaming Inc. Wagering Game With Board-Game Feature For Payoffs
US6980478B1 (en) * 2004-09-01 2005-12-27 Micron Technology, Inc. Zero-enabled fuse-set
JP2006107590A (ja) * 2004-10-04 2006-04-20 Nec Electronics Corp 半導体集積回路装置及びそのテスト方法
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7308598B2 (en) * 2004-11-04 2007-12-11 International Business Machines Corporation Algorithm to encode and compress array redundancy data
US7156570B2 (en) * 2004-12-30 2007-01-02 Cotapaxi Custom Design And Manufacturing, Llc Implement grip
JP4524636B2 (ja) * 2005-03-24 2010-08-18 エルピーダメモリ株式会社 半導体記憶装置
US7373573B2 (en) * 2005-06-06 2008-05-13 International Business Machines Corporation Apparatus and method for using a single bank of eFuses to successively store testing data from multiple stages of testing
JP5094085B2 (ja) * 2005-09-29 2012-12-12 エスケーハイニックス株式会社 半導体装置のデータ入出力マルチプレクサ
US7522467B2 (en) * 2005-09-29 2009-04-21 Hynix Semiconductor Inc. Semiconductor memory device
US7310282B2 (en) * 2005-12-30 2007-12-18 Lexmark International, Inc. Distributed programmed memory cell overwrite protection
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) * 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
KR100791348B1 (ko) * 2006-12-15 2008-01-03 삼성전자주식회사 반도체 메모리 장치 및 그 병렬 비트 테스트 방법
KR100798792B1 (ko) 2006-12-27 2008-01-28 주식회사 하이닉스반도체 반도체 메모리 장치
KR100801309B1 (ko) * 2007-01-03 2008-02-05 주식회사 하이닉스반도체 라이트레벨링 동작을 하는 메모리장치.
KR100825002B1 (ko) * 2007-01-10 2008-04-24 주식회사 하이닉스반도체 효과적으로 직렬로 입출력되는 데이터의 오류를 검사할 수있는 반도체 메모리 장치 및 그 구동방법
KR100920830B1 (ko) * 2007-04-11 2009-10-08 주식회사 하이닉스반도체 라이트 제어 신호 생성 회로 및 이를 이용하는 반도체메모리 장치 및 그의 동작 방법
US20080291760A1 (en) * 2007-05-23 2008-11-27 Micron Technology, Inc. Sub-array architecture memory devices and related systems and methods
KR100907928B1 (ko) * 2007-06-13 2009-07-16 주식회사 하이닉스반도체 반도체 메모리 장치
KR100933668B1 (ko) * 2008-04-30 2009-12-23 주식회사 하이닉스반도체 출력회로
US7903457B2 (en) * 2008-08-19 2011-03-08 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US8412987B2 (en) * 2009-06-30 2013-04-02 Micron Technology, Inc. Non-volatile memory to store memory remap information
US8495467B1 (en) 2009-06-30 2013-07-23 Micron Technology, Inc. Switchable on-die memory error correcting engine
US8412985B1 (en) 2009-06-30 2013-04-02 Micron Technology, Inc. Hardwired remapped memory
KR101163035B1 (ko) * 2009-09-04 2012-07-09 에스케이하이닉스 주식회사 데이터 라인 구동 회로
KR101277479B1 (ko) * 2010-08-31 2013-06-21 에스케이하이닉스 주식회사 반도체 메모리 장치
US8473679B2 (en) * 2011-03-31 2013-06-25 Ceva D.S.P. Ltd. System, data structure, and method for collapsing multi-dimensional data
US8719648B2 (en) 2011-07-27 2014-05-06 International Business Machines Corporation Interleaving of memory repair data compression and fuse programming operations in single fusebay architecture
US8467260B2 (en) 2011-08-05 2013-06-18 International Business Machines Corporation Structure and method for storing multiple repair pass data into a fusebay
US8484543B2 (en) 2011-08-08 2013-07-09 International Business Machines Corporation Fusebay controller structure, system, and method
US8537627B2 (en) 2011-09-01 2013-09-17 International Business Machines Corporation Determining fusebay storage element usage
US10726939B2 (en) * 2017-09-27 2020-07-28 SK Hynix Inc. Memory devices having spare column remap storages
US10622038B2 (en) * 2018-06-29 2020-04-14 Arm Limited High-speed memory architecture
US10984884B2 (en) * 2019-04-18 2021-04-20 Micron Technology, Inc. Configurable associated repair addresses and circuitry for a memory device
US11232849B2 (en) * 2019-12-03 2022-01-25 Micron Technology, Inc. Memory device with a repair match mechanism and methods for operating the same
TWI752704B (zh) * 2020-11-03 2022-01-11 華邦電子股份有限公司 記憶體儲存裝置及其操作方法

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389715A (en) * 1980-10-06 1983-06-21 Inmos Corporation Redundancy scheme for a dynamic RAM
US4471472A (en) * 1982-02-05 1984-09-11 Advanced Micro Devices, Inc. Semiconductor memory utilizing an improved redundant circuitry configuration
US4573146A (en) * 1982-04-20 1986-02-25 Mostek Corporation Testing and evaluation of a semiconductor memory containing redundant memory elements
US4601019B1 (en) * 1983-08-31 1997-09-30 Texas Instruments Inc Memory with redundancy
US4837747A (en) * 1986-11-29 1989-06-06 Mitsubishi Denki Kabushiki Kaisha Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block
US4807191A (en) * 1988-01-04 1989-02-21 Motorola, Inc. Redundancy for a block-architecture memory
US5617365A (en) * 1988-10-07 1997-04-01 Hitachi, Ltd. Semiconductor device having redundancy circuit
EP0389203A3 (de) * 1989-03-20 1993-05-26 Fujitsu Limited Halbleiterspeichergerät beinhaltend Information, die die Anwesenheit mangelhafter Speicherzellen anzeigt
GB9016783D0 (en) * 1989-09-01 1990-09-12 Ici Plc Agrochemical compositions
US5083016A (en) * 1990-03-27 1992-01-21 Hughes Aircraft Company 3-transistor source follower-per-detector unit cell for 2-dimensional focal plane arrays
US5270974A (en) * 1990-09-07 1993-12-14 Alliance Semiconductor Corporation Monolithic fail bit memory
JP2600018B2 (ja) * 1990-09-29 1997-04-16 三菱電機株式会社 半導体記憶装置
JPH06111596A (ja) * 1990-10-09 1994-04-22 Texas Instr Inc <Ti> メモリ
JP3019869B2 (ja) * 1990-10-16 2000-03-13 富士通株式会社 半導体メモリ
DE69122481T2 (de) * 1990-12-14 1997-02-20 Sgs Thomson Microelectronics Halbleiterspeicher mit Multiplex-Redundanz
JPH0831279B2 (ja) * 1990-12-20 1996-03-27 インターナショナル・ビジネス・マシーンズ・コーポレイション 冗長システム
JP2536333B2 (ja) 1991-07-24 1996-09-18 富士通株式会社 半導体記憶装置
US5295102A (en) * 1992-01-31 1994-03-15 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with improved redundant sense amplifier control
US5257229A (en) * 1992-01-31 1993-10-26 Sgs-Thomson Microelectronics, Inc. Column redundancy architecture for a read/write memory
JP2501993B2 (ja) * 1992-02-24 1996-05-29 株式会社東芝 半導体記憶装置
EP0567707A1 (de) * 1992-04-30 1993-11-03 International Business Machines Corporation Implementierung von Spaltenredundanz in einer Cachespeicherarchitektur
KR100296850B1 (ko) * 1992-05-28 2001-10-24 썬 마이크로시스템즈, 인코포레이티드 캐시램용다수의뱅크열용장성초기화제어기
KR970004460B1 (ko) * 1992-06-30 1997-03-27 니뽄 덴끼 가부시끼가이샤 반도체 메모리 회로
US5396124A (en) * 1992-09-30 1995-03-07 Matsushita Electric Industrial Co., Ltd. Circuit redundancy having a variable impedance circuit
JP2741824B2 (ja) * 1992-10-14 1998-04-22 三菱電機株式会社 半導体記憶装置
JP3293935B2 (ja) * 1993-03-12 2002-06-17 株式会社東芝 並列ビットテストモード内蔵半導体メモリ
JPH06275693A (ja) * 1993-03-20 1994-09-30 Hitachi Ltd ダイナミック型ｒａｍ
US5340679A (en) * 1993-03-22 1994-08-23 Xerox Corporation Intermediate transfer element coatings
US5377146A (en) * 1993-07-23 1994-12-27 Alliance Semiconductor Corporation Hierarchical redundancy scheme for high density monolithic memories
US5381370A (en) * 1993-08-24 1995-01-10 Cypress Semiconductor Corporation Memory with minimized redundancy access delay
JP2616544B2 (ja) * 1993-09-22 1997-06-04 日本電気株式会社 半導体記憶装置
US5491664A (en) * 1993-09-27 1996-02-13 Cypress Semiconductor Corporation Flexibilitiy for column redundancy in a divided array architecture
JP3056034B2 (ja) 1993-12-27 2000-06-26 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
EP0668562B1 (de) * 1994-02-17 1998-08-05 STMicroelectronics S.r.l. Verfahren zur Programmierung von Redundanzregistern in einer Spaltenredundanzschaltung für einen Halbleiterspeicherbaustein
DE69411532T2 (de) * 1994-02-17 1999-03-04 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Verfahren zur Programmierung von Redundanzregistern in einer Zeilenredundanzschaltung für einen Halbleiterspeicherbaustein
EP0697659B1 (de) 1994-08-12 1999-12-15 Siemens Aktiengesellschaft Redundanz-Schaltungsanordnung für einen integrierten Halbleiterspeicher
US5822256A (en) * 1994-09-06 1998-10-13 Intel Corporation Method and circuitry for usage of partially functional nonvolatile memory
US5528539A (en) * 1994-09-29 1996-06-18 Micron Semiconductor, Inc. High speed global row redundancy system
US5548553A (en) * 1994-12-12 1996-08-20 Digital Equipment Corporation Method and apparatus for providing high-speed column redundancy
US5577050A (en) * 1994-12-28 1996-11-19 Lsi Logic Corporation Method and apparatus for configurable build-in self-repairing of ASIC memories design
US5563833A (en) * 1995-03-03 1996-10-08 International Business Machines Corporation Using one memory to supply addresses to an associated memory during testing
US5691945A (en) * 1995-05-31 1997-11-25 Macronix International Co., Ltd. Technique for reconfiguring a high density memory
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US5777923A (en) * 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
US5734617A (en) * 1996-08-01 1998-03-31 Micron Technology Corporation Shared pull-up and selection circuitry for programmable cells such as antifuse cells

Also Published As

Publication number Publication date
US6560728B2 (en) 2003-05-06
EP0931288B1 (de) 2002-07-17
US6163860A (en) 2000-12-19
US6018811A (en) 2000-01-25
JP2000509182A (ja) 2000-07-18
AU2461597A (en) 1997-11-12
EP0931288A1 (de) 1999-07-28
DE69714060T2 (de) 2003-03-13
DE69714060D1 (de) 2002-08-22
US20010016893A1 (en) 2001-08-23
KR20000010683A (ko) 2000-02-25
US5706292A (en) 1998-01-06
US7043672B2 (en) 2006-05-09
WO1997040444A1 (en) 1997-10-30
KR100392557B1 (ko) 2003-11-20
US20040010737A1 (en) 2004-01-15
JP3697266B2 (ja) 2005-09-21

Similar Documents

Publication Publication Date Title
ATE220808T1 (de) Anordnung für eine halbleitervorrichtung mit redundanten elementen
KR100495457B1 (ko) 집적회로메모리
GB2266795B (en) Column redundancy circuit for a semiconductor memory device
EP0398067A3 (de) Kombination einer Mehrzahl von Speichern
KR920006997A (ko) 용장회로(冗長回路)
FR2688328B1 (fr) Circuit a redondance de rangees pour dispositif a memoire a semi-conducteurs pour reparer ou remplacer une cellule defectueuse d&#39;un reseau de cellules a memoire.
KR900006318B1 (en) Gate array intergrated circuit device and method thereof for various bit-word construstions
DE69330731D1 (de) Redundanzschaltung für Halbleiterspeichergeräte
KR890004457B1 (en) Semiconductor memory device
KR890008833A (ko) 반도체메모리
JPH0666394B2 (ja) 半導体記憶装置
EP1221165A4 (de) Schaltung und verfahren für ein multiplexredundanzschema in einer speicheranordnung
KR920018757A (ko) 메모리 셀 어레이 분할형 반도체 기억 장치
KR950034254A (ko) 고대역폭을 얻기 위한 반도체 메모리장치 및 그 신호선배치방법
KR880010421A (ko) 오픈 비트선 구조를 가지는 다이나믹형 랜덤 억세스 메모리
KR920005174A (ko) 반도체 기억장치
EP0155521B1 (de) Halbleiterspeicheranordnung
KR920010632A (ko) 반도체 메모리 디바이스
KR920015374A (ko) 반도체 기억장치
US6788600B2 (en) Non-volatile semiconductor memory
KR890015270A (ko) 반도체메모리장치
KR910019054A (ko) 랜덤 악세스 메모리 소자
US6072735A (en) Built-in redundancy architecture for computer memories
KR960038971A (ko) 트리플 포트 반도체 메모리장치
JPH08255479A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties