WO2020192420A1 - 掩膜版及其制作方法、掩膜版组件 - Google Patents

掩膜版及其制作方法、掩膜版组件 Download PDF

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Publication number
WO2020192420A1
WO2020192420A1 PCT/CN2020/078723 CN2020078723W WO2020192420A1 WO 2020192420 A1 WO2020192420 A1 WO 2020192420A1 CN 2020078723 W CN2020078723 W CN 2020078723W WO 2020192420 A1 WO2020192420 A1 WO 2020192420A1
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WO
WIPO (PCT)
Prior art keywords
mask
area
metal layer
pattern area
thickness
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Application number
PCT/CN2020/078723
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English (en)
French (fr)
Inventor
郑勇
杜帅
丁文彪
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/055,508 priority Critical patent/US20210123129A1/en
Publication of WO2020192420A1 publication Critical patent/WO2020192420A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005—Masking devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the embodiments of the present disclosure relate to a mask, a manufacturing method thereof, and a mask assembly.
  • a mask In the manufacturing process of electronic products, masks are often used to form various patterned film layers. For example, a mask can be used to realize the vapor deposition of the organic light-emitting layer in an organic light emitting diode (OLED) display device.
  • OLED organic light emitting diode
  • a mask is provided.
  • the mask has a mask pattern area and a non-mask pattern area located on the peripheral side of the mask pattern area; the mask pattern area includes at least one effective mask area; in any effective mask area,
  • the mask includes: a plurality of vapor deposition holes; and a shielding strip located between two adjacent vapor deposition holes.
  • the mask is provided with a welding area in the non-mask pattern area; the part of the mask in the non-mask pattern area, at least in the thickness of the welding area, is larger than that of the mask
  • the thickness of the shielding strip of the plate in the effective mask area; the thickness refers to the size of the corresponding part in a direction perpendicular to the plane of the mask.
  • the mask pattern area includes more than two effective mask areas; in the mask pattern area, the mask includes: two adjacent effective mask areas The thickness of the spacer between the mask regions is the same as the thickness of the shielding strip.
  • the mask includes: a first metal layer, the first metal layer includes at least the shielding bar in the effective mask area, and the first metal layer covers the non- Mask pattern area; a second metal layer stacked with the first metal layer, the second metal layer is located in the non-mask pattern area, and at least covers the first metal layer in the welding area part.
  • the second metal layer covers a portion of the first metal layer in the unmasked pattern area.
  • the non-mask pattern area includes: a transition area adjacent to the mask pattern area.
  • the thickness of the mask in the transition area is gradually increased from the first thickness to the second thickness along the first direction; the first direction is from the side where the transition area and the mask pattern area meet , Pointing to a side of the transition area away from the mask pattern area.
  • the first thickness is equal to the thickness of the shielding strip; the second thickness is equal to the thickness of the shielding strip and the thickness of the portion of the second metal layer excluding the transition region Sum.
  • the welding zone is arranged in at least one of the following ways: the welding zone and the transition zone do not overlap; and/or, the number of the welding zone is two, and the welding zone is two.
  • the regions are respectively located on opposite sides of the mask pattern region.
  • the width of the transition zone along the first direction ranges from about 1 ⁇ m to 8 ⁇ m.
  • the mask pattern area is substantially rectangular.
  • the portions of the transition zone located on opposite sides of the width direction of the rectangle have a width in the first direction in a range of approximately: 1 to 3 ⁇ m; and/or, the transition zone is located at the length of the rectangle
  • the width of the parts on opposite sides of the direction along the first direction is approximately: 3 ⁇ m to 8 ⁇ m.
  • the thickness of the mask in the non-mask pattern area except for the transition area ranges from about 20 ⁇ m to 30 ⁇ m.
  • the material of the second metal layer includes at least one of copper or tungsten.
  • the thickness of the first metal layer ranges from about 3 ⁇ m to 10 ⁇ m.
  • the thickness of the shielding strips of the mask in the effective mask area is about 3 ⁇ m-10 ⁇ m.
  • the mask assembly includes: a frame in which an opening is provided; at least one mask as described in any of the above embodiments, each mask across the opening and in the welding area Welded with the frame.
  • a method for manufacturing a mask has a mask pattern area and a non-mask pattern area on the peripheral side of the mask pattern area; the mask pattern area includes at least one effective mask area; the mask is in the non-mask pattern area A welding area is provided in the mask pattern area.
  • the manufacturing method includes: forming a first metal layer; the first metal layer extends from the mask pattern area to the non-mask pattern area and covers the non-mask pattern area; in any effective mask In the area, the first metal layer includes: a plurality of vapor deposition holes, and a shielding strip located between two adjacent vapor deposition holes.
  • a second metal layer is formed on one side of the first metal layer, and the second metal layer is located in the unmasked pattern area and covers at least a portion of the first metal layer located in the welding area to The thickness of the part of the mask in the non-mask pattern area at least in the welding area is greater than the thickness of the shielding strip of the mask in the effective mask area.
  • the forming the second metal layer on one side of the first metal layer includes: forming a first adhesive layer on one side of the first metal layer; The mask pattern area, and at least cover the first metal layer in the mask pattern area except for the vapor deposition hole; the electroforming process is used to form the first adhesive layer on the first A second metal layer is formed on the metal layer so that the second metal layer covers the exposed surface of the first metal layer in the non-mask pattern area; and the first adhesive layer is removed.
  • the forming the first adhesive layer on one side of the first metal layer includes: providing a mold on one side of the first metal layer; the mold is located in the non-mask pattern area , And at least cover the transition area adjacent to the mask pattern area in the non-mask pattern area; wherein the thickness of the mold in the transition area gradually increases from 0 to H along the first direction; The range of H is about 10 ⁇ m to 27 ⁇ m; the width of the transition area along the first direction ranges from about 1 ⁇ m to 3 ⁇ m; the first direction is from the side where the transition area and the mask pattern area meet , Pointing to a side of the transition area away from the mask pattern area; forming the first adhesive layer on the first metal layer provided with the mold; wherein the first adhesive layer includes: covering the The main adhesive layer pattern of the first metal layer in the mask pattern area except for the evaporation hole, and the extended adhesive layer pattern extending to the transition area; the extended adhesive layer pattern covers the mold The part located in the transition zone; the mold is removed to retain
  • the use of an electroforming process to form a second metal layer on the first metal layer formed with the first adhesive layer includes: forming the first metal layer with the first adhesive layer Electroforming is performed in an electroforming solution containing at least one of copper ions or tungsten ions to form a second metal layer containing at least one of copper or tungsten.
  • FIG. 1a is a structural diagram of a display panel provided by some embodiments of the present disclosure.
  • FIG. 1b is a structural diagram of a sub-pixel in an OLED display panel provided by some embodiments of the present disclosure
  • FIG. 2 is a structural diagram of a mask assembly provided by some embodiments of the present disclosure.
  • FIG. 3 is a schematic diagram of a mask assembly provided by some embodiments of the present disclosure during an evaporation process
  • FIG. 4 is a structural diagram of a mask provided by some embodiments of the present disclosure.
  • FIG. 5 is a structural diagram of another mask provided by some embodiments of the present disclosure.
  • FIG. 6 is a cross-sectional view of the mask in FIG. 5 along the O-O' direction;
  • FIG. 7 is a structural diagram of another mask provided by some embodiments of the present disclosure.
  • Figure 8 is a cross-sectional view of the mask in Figure 7 along the S-S' direction;
  • FIG. 9 is another cross-sectional view of the mask in FIG. 7 along the S-S' direction;
  • Figure 10 is another cross-sectional view of the mask in Figure 7 along the M-M' direction;
  • FIG. 11 is a structural diagram of another mask assembly provided by some embodiments of the disclosure.
  • FIG. 12 is a flowchart of a method for manufacturing a mask provided by some embodiments of the present disclosure.
  • FIG. 13 is a structural diagram of a first metal layer provided by some embodiments of the present disclosure.
  • FIG. 14 is a flowchart of another method for manufacturing a mask provided by some embodiments of the present disclosure.
  • FIG. 15 is a structural diagram of a first adhesive layer formed on a first metal layer according to some embodiments of the present disclosure
  • FIG. 16 is a flowchart of another method for manufacturing a mask provided by some embodiments of the present disclosure.
  • 17a to 17c are structural diagrams corresponding to some steps in the manufacturing process of a mask provided by some embodiments of the disclosure.
  • 18a to 18b are structural diagrams corresponding to other steps in the manufacturing process of a mask provided by some embodiments of the disclosure.
  • the terms "at least one of A, B, and C” and “at least one of A, B or C” have the same meaning, and both include the following combinations of A, B and C: only A, only B, only C, The combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • the application of the mask in the manufacturing process of an Organic Light Emitting Diode (OLED) display panel is taken as an example for description.
  • OLED display panels have received widespread attention due to their self-luminous, light and thin, low power consumption, high contrast, high color gamut, and flexible display.
  • the OLED display panel is also known as a new generation of display technology.
  • the OLED display panel can be applied to an OLED display device.
  • the OLED display device can be any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital camera, a navigator, etc.
  • the above-mentioned OLED display panel PNL includes: a display area Q 1 (active area, AA, AA area for short) and a peripheral area Q 2 arranged in a circle around the display area Q 1 .
  • the above AA area includes sub pixels P of multiple colors.
  • the sub pixels of multiple colors include at least a first color sub pixel, a second color sub pixel, and a third color sub pixel.
  • the color and the third color are three primary colors (for example, red, green, and blue).
  • the above-mentioned multiple sub-pixels P are arranged in a matrix form as an example in each embodiment of the present disclosure.
  • the sub-pixels P arranged in a row along the horizontal direction X are called sub-pixels in the same row
  • the sub-pixels P arranged in a row along the vertical direction Y are called sub-pixels in the same column.
  • the sub-pixels in the same row can be connected to one gate line
  • the sub-pixels in the same column can be connected to one data line.
  • an organic light-emitting diode (OLED) and a pixel driving circuit 903 that controls the organic light-emitting diode (OLED) to emit light are provided in the sub-pixel P.
  • the above-mentioned organic light emitting diode includes a cathode 901 and an anode 902, and a light-emitting function layer located between the cathode 901 and the anode 902.
  • the light-emitting functional layer may include an organic light-emitting layer EML, a hole transport layer HTL between the organic light-emitting layer EML and the anode 902, and an electron transport layer ETL between the organic light-emitting layer EML and the cathode 901.
  • a hole injection layer may be provided between the hole transport layer HTL and the anode 902
  • an electron injection layer may be provided between the electron transport layer ETL and the cathode 901.
  • the anode 902 is used to inject holes and the cathode 901 injects electrons.
  • the formed electrons and holes meet in the organic light-emitting layer EML to generate excitons, thereby exciting the organic
  • the light emitting layer EML emits light.
  • the aforementioned pixel driving circuit 903 is generally composed of electronic devices such as a thin film transistor (TFT for short) and a capacitor (C for short).
  • the pixel driving circuit 903 may be a 2T1C structured pixel driving circuit composed of two thin film transistors (a switching TFT and a driving TFT) and a capacitor; of course, the pixel driving circuit 903 may also be composed of two or more thin film transistors.
  • a pixel driving circuit composed of transistors (for example, multiple switching TFTs and one driving TFT) and at least one capacitor. Wherein, regardless of the structure of the pixel driving circuit 903, it should include a driving TFT, which may be coupled to the anode 902 of the OLED.
  • FIG. 1b is only a schematic diagram, and does not show the connection relationship between the pixel drive circuit (in practice, a suitable pixel drive circuit can be selected according to the needs) and the OLED.
  • the pixel drive circuit 903 The driving TFT in can be coupled to the anode 903 of the OLED through a through hole on the insulating layer 904 located above it.
  • FIG. 1b also shows a substrate 905, and the pixel driving circuit 903 may be directly or indirectly fabricated on the substrate 905.
  • the organic light-emitting layer EML can be produced by an evaporation process using a mask assembly.
  • the mask assembly A' includes a frame 20 and at least one mask 10' (not limited to 3 in FIG. 2).
  • a mask 10' A mask 10'
  • an opening 200 is formed in the frame 20.
  • Each mask 10 ′ straddles the opening 200 and is welded to the frame 20 in the welding area 21.
  • multiple masks 10 ′ can be arranged in parallel and welded to the frame 20 in the welding area 21 respectively.
  • the mask 10′ In the process of assembling the mask assembly A′, the mask 10′ needs to be stretched to stretch and straddle the opening 200 of the frame 20. At this time, the part of the mask 10' in the welding area 21 is in contact with the frame 20, and then this part is welded to the frame 20, for example, laser welding can be used to complete the fabrication of the mask assembly A'.
  • the specific position, size, shape, etc., of the welding area 21 in the mask 10' can be set according to the shape of the mask 10' and the shape of the frame 20, and combined with actual needs.
  • the embodiments of the present disclosure do not limit this.
  • FIG. 2 is only an example of the mask assembly A'.
  • the mask assembly A' includes the aforementioned frame 20 and multiple masks 10'.
  • the mask assembly A' also includes a cover strip (Cover) that spans the opening 200 on the frame 20 and is located at the gap between two adjacent masks 10', and the cover strip is used to block The vapor deposition material is vapor-deposited on the substrate from the position of the gap.
  • the mask assembly A' also includes a support bar (Howling) that straddles the opening 200 of the frame 20 and crosses the cover bar (Cover). The support bar is used to support the mask 10' to prevent the The mask 10' is deformed.
  • the mask assembly A' is placed on the substrate 30 (the substrate 30 is provided with pixel drive circuits, anodes and other components in the area corresponding to each sub-pixel P) and the vapor deposition source 40 In this way, the organic vapor deposition material in the vapor deposition source 40 can be vapor-deposited into the corresponding sub-pixels in the substrate 30 through the vapor deposition holes 101 on the mask 10 ′.
  • the mask 10' in the mask assembly A' includes a mask pattern area 01 (Pattern Area) and a non-mask pattern area 02 located on the peripheral side of the mask pattern area 01.
  • an effective mask area 100 corresponding to each display panel PNL is provided in the mask pattern area 01 (not limited to the three effective mask areas 100 in FIG. 4).
  • adjacent effective mask regions 100 are separated by spacers 103.
  • the mask 10' can be used to make a display panel motherboard. After the display panel mother board is cut, multiple independent display panels PNL can be obtained.
  • a plurality of vapor deposition holes 101 are provided in the effective mask area 100, and a shielding strip 102 (Slit) is formed between two adjacent vapor deposition holes 101.
  • one evaporation hole may correspond to one sub-pixel P in the display panel PNL.
  • one vapor deposition hole may correspond to a row of sub-pixels P in the display panel PNL (for example, the vapor deposition hole 101 shown in FIG. 4).
  • the mask 10' has the same thickness at all positions and is relatively thin. As described above, when the mask 10' is used to form a patterned film layer (such as the above-mentioned organic light-emitting layer EML), it is often necessary to spread the mask and weld it to the frame. However, the inventors of the present disclosure have discovered through research that due to the small overall thickness of the above-mentioned mask 10', it is difficult to control the laser energy when laser welding is used. At this time, if the energy of the laser is too large, it is easy to cause weld penetration; if the energy of the laser is too small, it is easy to cause the phenomenon of virtual welding.
  • a patterned film layer such as the above-mentioned organic light-emitting layer EML
  • the mask 10 has a mask pattern area 01 and a peripheral side of the mask pattern area 01. Unmasked pattern area 02.
  • the non-mask pattern area 02 may be arranged in a circle around the mask pattern area 01.
  • the mask pattern area 01 includes at least one effective mask area 100.
  • the mask 10 includes a plurality of vapor deposition holes 101 and a shielding bar 102 located between two adjacent vapor deposition holes 101.
  • the mask 10 is provided with a welding area 21 in the non-mask pattern area 02, and the thickness of the mask 10 in the non-mask pattern area 02 is greater than the thickness of the mask 10 at least in the welding area 21
  • the thickness in each embodiment of the present disclosure refers to the size of the corresponding part along a direction perpendicular to the plane of the mask 10 (the thickness direction X as shown in FIG. 6).
  • the thickness of the mask 10 in the welding area refers to the size of the mask 10 in a direction perpendicular to the plane of the mask; the thickness of the masking strip 102 refers to the thickness of the masking strip 102 along the vertical direction The dimension in the direction of the plane where the mask is located.
  • the workpiece (membrane) with a smaller welding thickness is easier to control the welding process, and the welding reliability is higher. Therefore, in this embodiment, by increasing the thickness of the mask 10 in the welding area 21, when the mask 10 and the frame 20 are welded, the thickness of the mask 10 in the welding area 21 is improved.
  • the problems of poor welding (weld penetration, virtual welding, etc.) caused by difficult to control increase the welding reliability of the mask 10.
  • the thickness of the shielding strip 102 of the mask 10 is relatively small in the effective mask area 100, the accuracy of the mask 10 is relatively high, so that the mask 10 can also be used to vapor-deposit finer The pattern film layer.
  • the mask pattern area 01 includes more than two effective mask areas 100.
  • the mask plate 10 includes a spacer 103 located between two adjacent effective mask areas 100.
  • the thickness of the spacer 103 may be the same as or different from the thickness of the shielding strip 102 described above.
  • the mask 10 when the thickness of the spacer 103 is the same as the thickness of the shielding strip 102, the mask 10 is easier to process and manufacture; when the thickness of the spacer 103 is smaller than the thickness of the shielding strip 102, The accuracy of the mask 10 is relatively high; and when the thickness of the spacer 103 is greater than the thickness of the shielding bar 102, it is beneficial to improve the overall structural strength of the mask 10, so that the mask 10 is not easy to Deformation occurs, and the stability and reliability are high.
  • the mask 10 includes: sequentially stacked and arranged along the thickness direction X of the mask 10 The first metal layer 11 and the second metal layer 12.
  • the above-mentioned first metal layer 11 includes at least the aforementioned shielding strips 102 and spacers 103 in the effective mask area 01, that is, the shielding strips 102 and spacers 103 of the mask 10 in the effective mask area 01 belong to the first Part of the metal layer 11.
  • the first metal layer 11 covers the non-mask pattern area 02.
  • the thickness of the first metal layer 11 itself is the same in the effective mask area 01 and the non-mask pattern area 02. That is, the thickness of the shielding bar 102 in this example is the same as the thickness of the spacer 103.
  • first metal layer 11 may be formed by an electroforming process, and the material may be a nickel-iron alloy, and may also contain one or more of trace elements such as silicon, manganese, titanium, oxygen, carbon, and phosphorus.
  • the thickness of the first metal layer 11 ranges from about 3 ⁇ m to 10 ⁇ m.
  • the first metal layer 11 may be 3 ⁇ m, 5 ⁇ m, or 10 ⁇ m.
  • “about” means that the thickness of the first metal layer 11 can fluctuate up and down by ten percent.
  • the thickness of the first metal layer 11 may also be 2.7 ⁇ m, 10.5 ⁇ m, or 11 ⁇ m.
  • the above-mentioned second metal layer 12 is located in the unmasked pattern area 02 and covers at least the part of the first metal layer 11 located in the welding area 21.
  • the second metal layer 12 is formed by an electroforming process. At this time, the second metal layer 12 only covers the first metal layer 11 in the welding area 21. In part, the thickness of the mask 10 in the welding area 21 can be increased, which is beneficial to meet the welding requirements. Exemplarily, at this time, the thickness of the second metal layer 12 ranges from about 10 ⁇ m to 27 ⁇ m.
  • the second metal layer 12 may be 10 ⁇ m, 20 ⁇ m, or 27 ⁇ m.
  • “about” means that the thickness of the second metal layer 12 can fluctuate up and down by ten percent.
  • the thickness of the second metal layer 12 may also be 0.9 ⁇ m, 27.3 ⁇ m, or 2.97 ⁇ m.
  • FIG. 8 is a cross-sectional view along the S-S' position in FIG. 7
  • the electrical The casting process forms the second metal layer 12, and at this time, the second metal layer 12 covers the entire unmasked pattern area 02.
  • the mask 10 is composed of the first metal layer 11 and the second metal layer 12 described above.
  • the total thickness of the mask 10 in the non-masked pattern area 02 (for example, the sum of the thickness of the first metal layer 11 and the second metal layer 12) is about 20 ⁇ m to 30 ⁇ m. It is understood that the total thickness can also be up and down here.
  • the floating ten percent for example, may be 18 ⁇ m, 25 ⁇ m, or 33 ⁇ m.
  • the thickness of the mask 10 in the mask pattern area 01 (for example, the thickness of the first metal layer 11) is about 3 ⁇ m-10 ⁇ m, for example, it may be 5 ⁇ m.
  • the mask 10 has a thicker welding area 21 to meet the welding requirements of the mask 10, and at the same time, the mask 10 has a thinner mask pattern area 01, which can meet high resolution and Production requirements for organic light-emitting layers in ultra-thin OLED display panels.
  • first metal layer 11 is used as a part of the mask 10 of this embodiment, but those skilled in the art can understand that when the first metal layer 11 is made by an electroforming process, As far as the first metal layer 11 is concerned, it can be regarded as an electroformed metal fine mask (electroformed FMM) with uniform thickness in the conventional sense, that is to say, the thickness in the conventional sense can be directly used in this embodiment. A uniform electroformed metal fine mask is used as the first metal layer 11 in the mask 10 of this embodiment.
  • the non-mask pattern area 02 of the mask 10 includes a transition area T adjacent to the periphery of the mask pattern area 01 (that is, adjacent to the mask pattern area 01).
  • the thickness of the mask 10 in the transition area T gradually increases along the first direction E from the first thickness D 1 to the second thickness D 2 .
  • the first direction E is from the side where the transition area T meets the mask pattern area 01 and points to the side of the transition area T away from the mask pattern area 01;
  • the first thickness D 1 is equal to the thickness of the shielding strip 102, and the second The thickness D 2 is greater than the first thickness D 1.
  • the second thickness D 2 may be equal to the sum of the thickness of the shielding strip 102 and the thickness of the part of the second metal layer 12 except the transition region T .
  • Example 10 composed of the first metal layer 11 and the second metal mask layer 12, an exemplary, said first thickness equal to the thickness D 1 of the first metal layer 11, i.e., the first thickness D 1 is the same as the thickness of the masking strip 102 and the spacer 103 in the mask pattern area 01 of the mask 10.
  • the thickness of the second metal layer 12 in the transition zone T gradually increases from 0 to D 2 -D 1 (that is, the difference between D 2 and D 1 ) along the first direction E.
  • the second metal layer 12 is outside the transition zone T The thickness is the same, both are D 2 -D 1 .
  • the transition area T and the welding area 21 in the non-mask pattern area 02 do not overlap.
  • the thickness of the mask 10 in the welding area 21 is basically the same, which is beneficial to improve the firmness after welding.
  • the width of the transition region T along the first direction E ranges from about 1 ⁇ m to 8 ⁇ m. It can be understood that "about” here means that the width of the transition zone T along the first direction E can fluctuate by ten percent.
  • the width of the transition zone T along the first direction E can be 0.9 ⁇ m, 1 ⁇ m, 5 ⁇ m, 8 ⁇ m or 8.8 ⁇ m etc.
  • the width of the transition area T along the first direction E is set to be greater than or equal to 1 ⁇ m (here can also be 0.9 ⁇ m), the second metal layer 12 in the mask 10 can be effectively utilized for stress buffering.
  • the width of the transition area T along the first direction E is less than or equal to 8 ⁇ m (8.8 ⁇ m), it is not easy to cause the width of the unmasked pattern area 02 of the mask 10 to increase, thereby helping to reduce evaporation during evaporation. Waste of plating materials.
  • the above-mentioned mask pattern area 01 is approximately rectangular (that is, the mask pattern area 01 may be a rectangle, or a similar rectangle with smooth edges).
  • the transition area T is located on the opposite sides of the width direction of the rectangle, and the width along the first direction E is about: 1 to 3 ⁇ m; and/or, the transition area T is located on the opposite sides of the length direction of the rectangle
  • the width of the part along the first direction E is approximately: 3 ⁇ m to 8 ⁇ m.
  • the transition area T is located on the opposite sides of the width direction of the rectangle, and the width range along the first direction E may fluctuate by ten percent, for example, it may be 0.9 ⁇ m, 1 ⁇ m, 2 ⁇ m or 3.3 ⁇ m, etc. .
  • the transition area T is located on the opposite sides of the length of the rectangle, and the width along the first direction E can also fluctuate by 10%, for example, it can be 2.7 ⁇ m, 5 ⁇ m, 8.8 ⁇ m, etc.
  • a pulling force for example, applying a pulling force of 2N to 5N
  • the component of the pulling force along the above-mentioned length direction is relatively large. Large, the component force along the aforementioned width direction is small or can be zero.
  • the portion of the transition area T located on opposite sides of the length of the rectangle along the first direction E is greater than the portion of the transition area T located on opposite sides of the width of the rectangle along the first direction E
  • the width range of one direction E so that the mask 10 has a better stress buffering effect in the length direction than in the width direction during the process of opening the screen, which can better prevent the mask 10 from being effective
  • the mask area is deformed in the process of opening the screen, which helps to ensure the accuracy of the mask 10.
  • laser absorption can be added to the second metal layer 12
  • Metals with larger coefficients, such as copper (Cu), tungsten (W), etc., are more conducive to the control of the welding laser.
  • the second metal layer 12 can be fabricated by an electroforming process.
  • the material of the second metal layer 12 can be a nickel-iron alloy, and can also include silicon, manganese, titanium, oxygen, carbon, One or more of trace elements such as phosphorus.
  • Cu 2+ , W 6+ or W 4+ are reduced to Copper (Cu) and tungsten (W) are deposited on the surface of the first metal layer 11 in the unmasked pattern area 02.
  • the electroforming deposition rate can be controlled to control the content of copper (Cu) and tungsten (W) in the second metal layer 12, for example, it can be 0.1%.
  • thermodynamic properties of the second metal layer 12 formed will affect the thermodynamic properties of the second metal layer 12 formed. It is very small, which reduces the reflection intensity of the mask to the laser during the welding process and ensures effective welding without affecting the normal mask process of the mask.
  • the mask assembly A includes a frame 20 and at least one mask 10. Wherein, an opening 200 is provided in the frame 20.
  • the mask 10 is the mask 10 in any of the above embodiments, and each mask 10 spans the opening 200 and is welded to the frame 20 at the welding area 21.
  • a welding area 21 is respectively provided at opposite ends of each mask 10 along its length direction Y, that is, two welding areas 21 of each mask 10 are respectively located thereon The opposite sides of the mask pattern area.
  • the mask 10 is roughly rectangular. After the mask is stretched along its length direction Y, the welding area 21 is welded to the frame 20. Wherein, the thickness of the mask 10 in the transition zone after the screen is reduced by about 0 ⁇ m ⁇ 0.1 ⁇ m (for example, it can also be 0 ⁇ m ⁇ 0.11 ⁇ m); and/or, the tensioned mask 10 is located in the transition zone.
  • the size of the part along the first direction E increases by about 0 ⁇ m to 0.1 ⁇ m (for example, it may be 0 ⁇ m to 0.11 ⁇ m).
  • the mask assembly A provided in this embodiment makes the mask 10 not easy to be damaged during the screen stretching process, and at the same time improves the stability and reliability of the mask 10 and the frame 20 after welding and fixing.
  • Some embodiments of the present disclosure also provide a method for manufacturing a mask. As shown in FIG. 12, the manufacturing method includes:
  • the first metal layer 11 (the plan view of the first metal layer 11 is basically the same as the plan view of the mask in FIG. 4, and the schematic can refer to FIG. 4) extends from the mask pattern area 01 to the non-mask pattern Area 02, and the first metal layer 11 covers the non-mask pattern area 02.
  • the first metal layer 11 includes a plurality of vapor deposition holes 101 and a shielding strip 102 located between two adjacent vapor deposition holes 101.
  • the first metal layer 11 also includes a spacer provided between two adjacent effective mask areas 100 (as shown in FIG. 4.
  • a second metal layer 12 is formed on one side of the first metal layer 11. Referring to FIGS. 6, 9 and 10, the second metal layer 12 is located in the unmasked pattern area 02 and covers at least the first metal layer 11 is located in the welding area 21 part.
  • the thickness of the formed mask in the non-mask pattern area 02 at least in the welding area 21 is greater than that of the mask strip 102 in the effective mask area 01 of the mask. thickness.
  • the poor welding welding penetration, virtual welding, etc. caused by the too small thickness of the mask 10 in the welding area 21 and the laser energy is not easy to control is improved.
  • the problem improves the welding reliability of the mask 10.
  • S2 of the above manufacturing method includes S21.
  • the first glue layer 13 is located in the mask pattern area 01, and the first glue layer 13 covers at least the part of the first metal layer 11 in the mask pattern area 01 except for the evaporation holes 101, that is, the first glue layer
  • the layer 13 covers at least the shielding bars 102 and the spacers of the first metal layer 11 in the mask pattern area 01 (the spacers 103 shown in FIG. 4, FIG. 5 or FIG. 7).
  • the first glue layer 13 may be hollowed out at the position of the vapor deposition hole 101, or may be recessed at the position of the vapor deposition hole 101, which is not limited in the embodiments of the present disclosure. It is only necessary to ensure that the first adhesive layer 13 at least covers the shielding strip 102 and the spacer 103 of the first metal layer 11 in the mask pattern area 01.
  • the S21 includes S211 to S213.
  • a mold 14 is provided on one side of the first metal layer 11. As shown in FIG. 17a, the mold 14 is located in the unmasked pattern area 02 and covers at least the unmasked pattern area 02 and the mask pattern area 01
  • the adjacent transition area T that is, a mold 14 is provided on the surface of the first metal layer 11 in the non-mask pattern area 02 and adjacent to the periphery of the mask pattern area 01.
  • the thickness of the mold 14 in the transition area T adjacent to the mask pattern area 01 gradually increases from 0 to H along the first direction E; the range of H is about 10 ⁇ m-27 ⁇ m.
  • the width of the transition zone T along the first direction E ranges from about 1 ⁇ m to 3 ⁇ m.
  • the first direction E is from the side where the transition area T meets the mask pattern area 01 and points to the side of the transition area T away from the mask pattern area 01.
  • the mold 14 includes an inclined surface U with a fixed slope in the transition area T.
  • the above-mentioned first adhesive layer 13 includes: a main adhesive layer pattern 130a covering the part of the first metal layer 11 in the mask pattern area 01 except for the evaporation hole 101, and a main adhesive layer pattern 130a extending to the transition area T
  • the adhesive layer pattern 130b is extended.
  • the extended adhesive layer pattern 130b covers the above-mentioned inclined surface U of the mold 14.
  • the above-mentioned first adhesive layer 13 forms a suspended inclined surface in the transition area T.
  • the following embodiments are all described as examples.
  • S2 of the above-mentioned manufacturing method also includes S22 ⁇ S23.
  • an electroforming process is used to form a second metal layer 12 on the first metal layer 11 on which the first adhesive layer 13 is formed, so that the second metal layer 12 Cover the portion of the first metal layer 11 in the unmasked pattern area 02, that is, the second metal layer 12 is formed on the exposed surface of the first metal layer 11 on which the first adhesive layer 13 is located in the unmasked pattern area 02 .
  • the first adhesive layer 13 forms a suspended inclined surface in the transition area T
  • the second metal layer 12 is formed by the electroforming process
  • the first adhesive layer 13 is exposed to the suspended inclined surface of the transition area T. 18a, so that the second metal layer 12 formed in the transition area T forms a slope with increasing thickness along a side close to the mask pattern area 01 to a direction E away from the mask pattern area 01.
  • the stress gradually changes through the slope part of the transition area T, thereby slowing down the sharp change in the stress caused by the sharp change in the thickness of the mask, and avoiding problems such as wrinkling of the mask .
  • the first metal layer 11 on which the first glue layer 13 is formed is cleaned with alcohol and deionized wind.
  • the first metal layer 11 formed with the first glue layer 13 is placed on the supporting electrode.
  • the first metal layer 11 can also be placed on the supporting electrode before the first adhesive layer 13 is formed.
  • the first metal layer 11 formed with the first adhesive layer 13 and carried by the carrying electrode is placed on the copper ion (for example, Cu 2+ ) and tungsten ion (for example, W 6+ , W 4+ ) is electroforming in an electroforming solution containing at least one ion.
  • the entire first metal layer 11 and the supporting electrode are used as the cathode, and the metal (for example, nickel-iron alloy) that needs to be electroformed is selected as the anode.
  • the electroforming solution contains anode metal ions. Under the action of the power source, the metal ions in the electroforming solution are reduced to metal on the exposed part of the first metal layer 11 and deposited on the surface to form the second metal layer 12 .
  • the second metal layer 12 formed has copper (Cu) and tungsten (W), thereby enabling Reducing the light-reflecting ability of the mask on the thickened metal layer 12 and improving its light-absorbing ability is more conducive to the control of the welding laser.

Abstract

一种掩膜版（10，10 ，），具有掩膜图案区（01）以及位于掩膜图案区（01）周侧的非掩膜图案区（02）；掩膜图案区（01）包括至少一个有效掩膜区（100）；在任一有效掩膜区（100）内，掩膜版（10）包括：多个蒸镀孔（101）；以及，位于相邻的两个蒸镀孔（101）之间的遮挡条（102）；掩膜版（10）在非掩膜图案区（02）内设置有焊接区（21）；掩膜版（10）在非掩膜图案区（02）内的部分，至少在焊接区（21）的厚度，大于掩膜版（10）在有效掩膜区（100）的遮挡条（102）的厚度；厚度是指对应部位沿垂直于掩膜版（10）所在平面的方向的尺寸。还公开了一种掩膜版组件（A ，）及一种掩膜版（10，10 ，）的制作方法。

Description

掩膜版及其制作方法、掩膜版组件
本申请要求于2019年03月28日提交的、申请号为201910244878.2的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开实施例涉及一种掩膜版及其制作方法、掩膜版组件。
背景技术
电子产品在制作过程中，往往需要采用掩膜版来形成各种图案膜层。例如，采用掩膜版可以实现对有机发光二极管(Organic Light Emitting Diode，OLED)显示装置中有机发光层的蒸镀。
发明内容
一方面，提供一种掩膜版。所述掩膜版具有掩膜图案区以及位于所述掩膜图案区周侧的非掩膜图案区；所述掩膜图案区包括至少一个有效掩膜区；在任一有效掩膜区内，所述掩膜版包括：多个蒸镀孔；以及，位于相邻的两个蒸镀孔之间的遮挡条。所述掩膜版在所述非掩膜图案区内设置有焊接区；所述掩膜版在所述非掩膜图案区内的部分，至少在所述焊接区的厚度，大于所述掩膜版在所述有效掩膜区的遮挡条的厚度；所述厚度是指对应部位沿垂直于所述掩膜版所在平面的方向的尺寸。
在一些实施例中，所述掩膜图案区中包括两个以上的所述有效掩膜区；在所述掩膜图案区内，所述掩膜版包括：位于相邻的两个所述有效掩膜区之间的间隔部，所述间隔部的厚度与所述遮挡条的厚度相同。
在一些实施例中，所述掩膜版包括：第一金属层，所述第一金属层在所述有效掩膜区中至少包括所述遮挡条，且所述第一金属层覆盖所述非掩膜图案区；与所述第一金属层层叠设置的第二金属层，所述第二金属层位于所述非掩膜图案区内，且至少覆盖所述第一金属层位于所述焊接区的部分。
在一些实施例中，所述第二金属层覆盖所述第一金属层位于所述非掩膜图案区的部分。
在一些实施例中，所述非掩膜图案区中包括：与所述掩膜图案区邻接的过渡区。所述掩膜版在所述过渡区的厚度沿第一方向从第一厚度逐渐递增大至第二厚度；所述第一方向由所述过渡区与所述掩膜图案区相接的一侧，指向所述过渡区远离所述掩膜图案区的一侧。
在一些实施例中，所述第一厚度等于所述遮挡条的厚度；所述第二厚 度等于所述遮挡条的厚度和所述第二金属层中除所述过渡区之外的部分的厚度之和。
在一些实施例中，所述焊接区按照以下至少一种方式设置：所述焊接区与所述过渡区不交叠；和/或，所述焊接区的数量为两个，两个所述焊接区分别位于所述掩膜图案区的相对两侧。
在一些实施例中，所述过渡区沿所述第一方向的宽度范围约为：1μm～8μm。
在一些实施例中，所述掩膜图案区大致呈矩形。其中，所述过渡区位于所述矩形的宽度方向的相对两侧的部分，沿所述第一方向的宽度范围约为：1～3μm；和/或，所述过渡区位于所述矩形的长度方向的相对两侧的部分，沿所述第一方向的宽度范围约为：3μm～8μm。
在一些实施例中，所述掩膜版在所述非掩膜图案区中，除所述过渡区之外的部分的厚度范围约为20μm～30μm。
在一些实施例中，所述第二金属层的材料包括铜或钨中的至少一种。
在一些实施例中，所述第一金属层的厚度范围约为：3μm～10μm。
在一些实施例中，所述掩膜版在所述有效掩膜区的所述遮挡条的厚度范围约为：3μm～10μm。
另一方面，提供一种掩膜版组件。所述掩膜版组件，包括：框架，所述框架中设置有开口；至少一个如上述任一实施例中所述的掩膜版，每个掩膜版横跨所述开口，并在焊接区与所述框架焊接。
又一方面，提供一种掩膜版的制作方法。所述掩膜版具有掩膜图案区以及位于所述掩膜图案区周侧的非掩膜图案区；所述掩膜图案区包括至少一个有效掩膜区；所述掩膜版在所述非掩膜图案区内设置有焊接区。所述制作方法包括：形成第一金属层；所述第一金属层从所述掩膜图案区延伸至所述非掩膜图案区，且覆盖所述非掩膜图案区；在任一有效掩膜区内，所述第一金属层包括：多个蒸镀孔，以及位于相邻的两个蒸镀孔之间的遮挡条。在所述第一金属层的一侧形成第二金属层，所述第二金属层位于所述非掩膜图案区内，且至少覆盖所述第一金属层位于所述焊接区的部分，以使所述掩膜版在所述非掩膜图案区内的部分，至少在所述焊接区的厚度，大于所述掩膜版在所述有效掩膜区的遮挡条的厚度。
在一些实施例中，所述在所述第一金属层的一侧形成第二金属层，包括：在所述第一金属层的一侧形成第一胶层；所述第一胶层位于所述掩膜图案区，且至少覆盖所述第一金属层在所述掩膜图案区中除所述蒸镀 孔以外的部分；采用电铸工艺，在形成有所述第一胶层的第一金属层上形成第二金属层，使所述第二金属层覆盖所述第一金属层位于所述非掩膜图案区的裸露表面；去除所述第一胶层。
在一些实施例中，所述在所述第一金属层的一侧形成第一胶层，包括：在所述第一金属层的一侧设置模具；所述模具位于所述非掩膜图案区，且至少覆盖所述非掩膜图案区中与所述掩膜图案区邻接的过渡区；其中，所述模具在所述过渡区内的厚度沿所述第一方向从0逐渐增加至H；H的范围约为10μm～27μm；所述过渡区沿所述第一方向的宽度范围约为1μm～3μm；所述第一方向由所述过渡区与所述掩膜图案区相接的一侧，指向所述过渡区远离所述掩膜图案区的一侧；在设置有所述模具的第一金属层上形成所述第一胶层；其中，所述第一胶层包括：覆盖所述第一金属层在所述掩膜图案区中除所述蒸镀孔以外的部分的主胶层图案，以及延伸至所述过渡区的延伸胶层图案；所述延伸胶层图案覆盖所述模具位于所述过渡区的部分；去除所述模具，以保留所述第一胶层。
在一些实施例中，所述采用电铸工艺，在形成有所述第一胶层的第一金属层上形成第二金属层，包括：将形成有所述第一胶层的第一金属层放置于具有铜离子或钨离子中的至少一种的电铸液中进行电铸，以形成包含有铜或钨中的至少一种材料的第二金属层。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1a为本公开一些实施例提供的一种显示面板的结构图；
图1b为本公开一些实施例提供的一种OLED显示面板中亚像素内的结构图；
图2为本公开一些实施例提供的一种掩膜版组件的结构图；
图3为本公开一些实施例提供的一种掩膜版组件在蒸镀过程的示意图；
图4为本公开一些实施例提供的一种掩膜版的结构图；
图5为本公开一些实施例提供的另一种掩膜版的结构图；
图6为图5中掩膜版沿O-O'方向的剖视图；
图7为本公开一些实施例提供的又一种掩膜版的结构图；
图8为图7中掩膜版沿S-S'方向的一种剖视图；
图9为图7中掩膜版沿S-S'方向的另一种剖视图；
图10为图7中掩膜版沿M-M'方向的另一种剖视图；
图11为本公开一些实施例提供的另一种掩膜版组件的结构图；
图12为本公开一些实施例提供的一种掩膜版的制作方法的流程图；
图13为本公开一些实施例提供的一种第一金属层的结构图；
图14为本公开一些实施例提供的另一种掩膜版的制作方法的流程图；
图15为本公开一些实施例提供的一种在第一金属层上形成有第一胶层的结构图；
图16为本公开一些实施例提供的又一种掩膜版的制作方法的流程图；
图17a～17c为本公开一些实施例提供的一种掩膜版在制作过程中一些步骤对应的结构图；
图18a～18b为本公开一些实施例提供的一种掩膜版在制作过程中又一些步骤对应的结构图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)” 或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。而“A和/或B”，包括以下三种组合：仅A，仅B，及A和B的组合。
除非另外定义，本公开实施例中使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开实施例中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“耦接”、“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。此外，在本公开各实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
本公开的一些实施例以掩膜版在有机发光二极管(Organic Light Emitting Diode，简称OLED)显示面板的制作过程中应用为例进行说明。
OLED显示面板因其具有自发光、轻薄、功耗低、高对比度、高色域、可实现柔性显示等优点，受到广泛的关注，OLED显示面板也被誉为新一代显示技术。该OLED显示面板可以应用于OLED显示装置中，示例性的，该OLED显示装置可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相机、导航仪等任何具有显示功能的产品或部件。
如图1a所示，上述OLED显示面板PNL包括：显示区Q 1(active area，AA，简称AA区)和围绕显示区Q 1一圈设置的周边区Q 2。上述AA区中包括多种颜色的亚像素(sub pixel)P，该多种颜色的亚像素至少包括第一颜色亚像素、第二颜色亚像素和第三颜色亚像素，第一颜色、第二颜色和第三颜色为三基色(例如红色、绿色和蓝色)。为了方便说 明，本公开各实施例中上述多个亚像素P以矩阵形式排列为例进行的说明。
在此情况下，沿水平方向X排列成一排的亚像素P称为同一行亚像素，沿竖直方向Y排列成一排的亚像素P称为同一列亚像素。同一行亚像素可以与一根栅线连接，同一列亚像素可以与一根数据线连接。
对于单个亚像素而言，如图1b所示，在亚像素P中设置有机发光二极管(OLED)以及控制该有机发光二极管(OLED)发光的像素驱动电路903。
参考图1b所示，上述有机发光二极管(OLED)包括阴极901和阳极902，以及位于阴极901和阳极902之间的发光功能层。其中，发光功能层可以包括有机发光层EML、位于有机发光层EML和阳极902之间的空穴传输层HTL、位于有机发光层EML和阴极901之间的电子传输层ETL。当然，根据需要，在一些实施例中，还可以在空穴传输层HTL和阳极902之间设置空穴注入层，可以在电子传输层ETL和阴极901之间设置电子注入层。
在显示时，通过控制施加在阳极902和阴极901上的电压，利用阳极902注入空穴，阴极901注入电子，所形成的电子和空穴在有机发光层EML相遇而产生激子，从而激发有机发光层EML发光。
上述像素驱动电路903一般由薄膜晶体管(Thin Film Transistor，简称TFT)、电容(Capacitance，简称C)等电子器件组成。例如，像素驱动电路903可以是由两个薄膜晶体管(一个开关TFT和一个驱动TFT)和一个电容构成的2T1C结构的像素驱动电路；当然，该像素驱动电路903还可以是由两个以上的薄膜晶体管(例如多个开关TFT和一个驱动TFT)和至少一个电容构成的像素驱动电路。其中，不管像素驱动电路903是何种结构，都应当包括驱动TFT，该驱动TFT可以与OLED的阳极902耦接。
需要说明的是，图1b仅为示意图，并未示出像素驱动电路(实际中可以根据需要选择合适的像素驱动电路)与OLED的连接关系，本领域的技术人员可以理解的，像素驱动电路903中的驱动TFT可以通过位于其上方的绝缘层904上的通孔与OLED的阳极903耦接。此外，示例性的，图1b中还示出了衬底905，该像素驱动电路903可以直接或间接地制作在该衬底905上。
以上述OLED显示面板PNL中的有机发光层EML的制作为例，该有机发光层EML可以利用掩膜版组件通过蒸镀工艺制作而成。
本公开一些实施例中提供一种掩膜版组件A'，如图2所示，该掩膜版组件A'包括框架20和至少一个掩膜版10'(并不限制于图2中的3个掩膜版10')。其中，框架20中形成有开口200。各掩膜版10'横跨该开口200，并且与框架20在焊接区21焊接。而掩膜版10'的数量为多个时，多个掩膜版10'可以并列平行设置，并分别与框架20在焊接区21焊接。
在掩膜版组件A'的组装过程中，需要先将掩膜版10'进行张网，使其伸展并横跨在框架20的开口200上。此时，掩膜版10'在焊接区21中的部分与框架20接触，然后将该部分与框架20进行焊接，例如可以采用激光焊接的方式，从而完成掩膜版组件A'的制作。
需要说明的是，掩膜版10'中的焊接区21的具体位置、大小、形状等，实际中可以根据掩膜版10'的形状以及框架20的形状，并结合实际的需要进行设定，本公开各实施例对此不做限定。
另外，图2仅是对掩膜版组件A'的一种示例说明，本领域的技术人员可以理解到，掩膜版组件A'中除了包括上述框架20和多个掩膜版10'之外，还可以包括其他的部件。例如，掩膜版组件A'中还包括横跨框架20上的开口200、且位于相邻两个掩膜版10'之间的缝隙位置处的遮盖条(Cover)，该遮盖条用于阻挡蒸镀材料从缝隙位置处蒸镀至基板上。又例如，掩膜版组件A'还包括横跨框架20的开口200、且与遮盖条(Cover)交叉设置的支撑条(Howling)，该支撑条用于支撑掩膜版10'，以防止该掩膜版10'发生变形。
如图3所示，在蒸镀时，将掩膜版组件A'放置于基板30(基板30中在对应各亚像素P的区域设置有像素驱动电路、阳极等元件)和蒸镀源40之间，从而使得蒸镀源40中的有机蒸镀材料能够透过掩膜版10'上的蒸镀孔101蒸镀至基板30中对应的各亚像素中。
如图3和图4所示，掩膜版组件A'中的掩膜版10'包括掩膜图案区01(Pattern Area)和位于掩膜图案区01周侧的非掩膜图案区02。并且，在掩膜图案区01中设置有与每个显示面板PNL一一对应的有效掩膜区100(不限制于图4中的3个有效掩膜区100)。其中，在掩膜图案区01中设置多个有效掩膜区100的情况下，相邻有效掩膜区100 之间通过间隔部103隔离。
可以理解的是，当掩膜图案区01包括多个有效掩膜区100时，该掩膜版10'可以用于制作显示面板母板。该显示面板母板切割后可以得到多个独立的显示面板PNL。
如图4所示，上述有效掩膜区100中设置有多个蒸镀孔101，相邻的两个蒸镀孔101之间为遮挡条102(Slit)。在一些示例中，一个蒸镀孔可以与显示面板PNL中的一个亚像素P对应。而在另一些示例中，一个蒸镀孔可以与显示面板PNL中的一列亚像素P对应(例如图4中所示出的蒸镀孔101)。
该掩膜版10'在各位置处的厚度一致，均比较薄。如上所述，在采用掩膜版10'形成图案膜层(例如上述有机发光层EML)时，往往需要将掩膜版进行张网，并焊接在框架上。然而，本公开的发明人经研究发现，由于上述掩膜版10'的整体厚度较小，在采用激光焊接时，激光的能量很难控制。这时，如果激光的能量过大，则容易造成焊穿现象；而如果激光的能量过小，则容易造成虚焊现象。
基于此，在上述基础上，本公开一些实施例中提供了另一种掩膜版10，参见图5，该掩膜版10具有掩膜图案区01以及位于该掩膜图案区01周侧的非掩膜图案区02。例如，在图5中，该非掩膜图案区02可以围绕掩膜图案区01一圈设置。此外，该掩膜图案区01包括至少一个有效掩膜区100。在任一有效掩膜区100内，该掩膜版10包括多个蒸镀孔101以及位于相邻的两个蒸镀孔101之间的遮挡条102。
该掩膜版10在所述非掩膜图案区02内设置有焊接区21，该掩膜版10在非掩膜图案区02内的部分，至少在焊接区21的厚度大于该掩膜版10在有效掩膜区01的遮挡条102的厚度。也即，相较图4示出的掩膜版10'而言，本实施例中的掩膜版10在非掩膜图案区02中焊接区21的厚度更大。需要说明的是，本公开各实施例中的厚度均指的是对应部位沿垂直于掩膜版10所在平面的方向(如图6示出的厚度方向X)的尺寸。例如，上述掩膜版10在焊接区的厚度指的是该掩膜版10沿垂直于该掩膜版所在平面的方向的尺寸；上述遮挡条102的厚度指的是该遮挡条102沿垂直于该掩膜版所在平面的方向的尺寸。
相比于焊接厚度较小的工件(膜材)而言，厚度较大的工件(膜材)，对于焊接工艺更容易控制，并且焊接的可靠性更高。因此，本实 施例中通过增加掩膜版10在焊接区21的厚度，在将掩膜版10与框架20进行焊接时，改善了因掩膜版10在焊接区21的厚度过小，激光能量不易控制，而造成的焊接不良(焊穿、虚焊等)的问题，提高了掩膜版10的焊接可靠性。
此外，由于在有效掩膜区100内，该掩膜版10的遮挡条102的厚度较小，使得该掩膜版10的精度比较高，从而还可以采用该掩膜版10蒸镀出更精细的图案膜层。
示例性的，如图5所示，该掩膜图案区01中包括两个以上的有效掩膜区100。在该掩膜图案区01内，掩膜版10包括位于相邻的两个有效掩膜区100之间的间隔部103。其中，该间隔部103的厚度与上述遮挡条102的厚度可以相同，也可以不相同。例如，在该间隔部103的厚度与上述遮挡条102的厚度相同的情况下，该掩膜版10加工制作时更加容易；在该间隔部103的厚度小于该遮挡条102的厚度的情况下，该掩膜版10的精度比较高；而在该间隔部103的厚度大于该遮挡条102的厚度的情况下，有利于提高该掩膜版10的整体结构强度，从而使得该掩膜版10不易发生变形，稳定性和可靠性较高。
在一些实施例中，结合图5和图6(图6为图5沿O-O'位置的剖视图)所示，该掩膜版10包括：沿掩膜版10的厚度方向X依次层叠设置的第一金属层11和第二金属层12。
上述第一金属层11在有效掩膜区01中至少包括前述的遮挡条102、间隔部103，也即掩膜版10在有效掩膜区01中的遮挡条102、间隔部103均属于第一金属层11中的一部分。并且，第一金属层11覆盖非掩膜图案区02。其中，示例性的，第一金属层11本身的厚度在有效掩膜区01和非掩膜图案区02一致。也即，本示例中遮挡条102的厚度与间隔部103的厚度相同。
需要说明的是，上述第一金属层11可以采用电铸工艺形成，材质可以为镍铁合金，还可以包含有硅、锰、钛、氧、碳、磷等微量元素中的一种或多种。
示例性的，该第一金属层11的厚度范围约为3μm～10μm，例如，该第一金属层11可以为3μm、5μm或10μm等。此处，“约”是指该第一金属层11的厚度范围可以上下浮动百分之十，例如，该第一金属层11的厚度也可能为2.7μm、10.5μm或11μm等。
上述第二金属层12位于非掩膜图案区02内，且至少覆盖第一金属层11位于焊接区21的部分。
例如，在第一金属层11的一侧，且在焊接区21内，通过电铸工艺形成第二金属层12，此时，第二金属层12仅覆盖第一金属层11位于焊接区21的部分，从而可以增加掩膜版10在焊接区21的厚度，有利于满足焊接需求。示例性的，此时该第二金属层12的厚度范围约为10μm～27μm，例如，该第二金属层12可以为10μm、20μm或27μm等。此处，“约”是指第二金属层12的厚度范围可以上下浮动百分之十，例如，该第二金属层12的厚度也可能为0.9μm、27.3μm或2.97μm等。
又例如，结合图7和图8(图8为图7沿S-S'位置的剖视图)所示，在第一金属层11的一侧，且在整个非掩膜图案区02内，通过电铸工艺形成成第二金属层12，此时，该第二金属层12覆盖整个非掩膜图案区02。这样使得第二金属层12的制作更加方便，简化了制作工艺，同时使得该掩膜版在张网时受力更加均匀，不易出现应力集中现象，从而有利于防止该掩膜版在张网过程中损坏。
在一些实施例中，如图7所示，该掩膜版10由上述第一金属层11和第二金属层12构成。该掩膜版10在非掩膜图案区02的总厚度(例如第一金属层11和第二金属层12的厚度之和)约为20μm～30μm，可以理解，此处该总厚度也可以上下浮动百分之十，例如可以为18μm、25μm或33μm等。该掩膜版10在位于掩膜图案区01的厚度(例如第一金属层11的厚度)约为3μm～10μm，例如可以为5μm。这样一来，该掩膜版10具有较厚的焊接区21，从而满足掩膜版10的焊接需求，同时该掩膜版10具有较薄的掩膜图案区01，从而能够满足高分辨率以及超薄OLED显示面板中有机发光层的制作要求。
需要说明的是，上述第一金属层11作为本实施例的掩膜版10中的一部分，但本领域的技术人员可以理解的是，当第一金属层11采用电铸工艺制作的情况下，对于第一金属层11而言，其本身即可视为常规意义上的厚度均匀的电铸金属精细掩膜版(电铸FMM)，也就是说本实施例中可以直接将常规意义上的厚度均匀的电铸金属精细掩膜版作为本实施例的掩膜版10中的第一金属层11。
在此基础上，为了减缓掩膜版10在张网过程中，掩膜图案区01和非掩膜图案区02之间应力急剧变化，提高掩膜版10的受力均匀性， 在一些实施例中，如图9和图10所示，掩膜版10的非掩膜图案区02中包括：与掩膜图案区01的四周相邻(即与掩膜图案区01邻接)的过渡区T。并且，掩膜版10在过渡区T的厚度，沿第一方向E从第一厚度D 1逐渐递增至第二厚度D 2。其中，第一方向E由过渡区T与掩膜图案区01相接的一侧，指向过渡区T远离掩膜图案区01的一侧；第一厚度D 1等于遮挡条102的厚度，第二厚度D 2大于第一厚度D 1，例如图9和图10所示，第二厚度D 2可以等于遮挡条102的厚度和第二金属层12中除过渡区T之外的部分的厚度之和。从而使得在张网过程中，通过过渡区T的部分，应力在过渡区逐渐变化，进而减缓了掩膜版因厚度急剧变化而导致的应力大幅变化，避免了掩膜版发生褶皱等问题。
在掩膜版10由上述第一金属层11和第二金属层12构成的实施例中，示例性的，上述第一厚度D 1与第一金属层11的厚度相等，也即上述第一厚度D 1与掩膜版10在掩膜图案区01中的遮挡条102、间隔部103的厚度相同。第二金属层12在过渡区T的厚度，沿第一方向E从0逐渐递增至D 2-D 1(即D 2与D 1的差值)，第二金属层12在过渡区T以外的厚度相同，均为D 2-D 1。
示例性的，如图10所示，该非掩膜图案区02中的过渡区T和焊接区21不交叠。这样使得掩膜版10在焊接区21的厚度基本一致，从而有利于提高焊接后的牢固性。
在一些实施例中，上述过渡区T沿第一方向E的宽度范围约为：1μm～8μm。可以理解，此处“约”是指该过渡区T沿第一方向E的宽度范围可以上下浮动百分之十，例如，该过渡区T沿第一方向E的宽度可以为0.9μm、1μm、5μm、8μm或8.8μm等。
本示例中，通过设置过渡区T沿第一方向E的宽度大于或等于1μm(此处也可以是0.9μm)，能够有效的利用掩膜版10中的第二金属层12进行应力缓冲。同时，通过设置过渡区T沿第一方向E的宽度小于或等于8μm(8.8μm)，不容易导致掩膜版10的非掩膜图案区02的宽度增加，从而有利于在蒸镀时减少蒸镀材料的浪费。
示例性的，如图7、图9和图10所示，上述掩膜图案区01大致呈矩形(即，该掩膜图案区01可以是长方形、也可以是边缘圆滑过渡的类长方形)。其中，过渡区T位于该矩形的宽度方向的相对两侧的部分，沿第一方向E的宽度范围约为：1～3μm；和/或，过渡区T位于该 矩形的长度方向的相对两侧的部分，沿第一方向E的宽度范围约为：3μm～8μm。此处，该过渡区T位于该矩形的宽度方向的相对两侧的部分，沿第一方向E的宽度范围可以上下浮动百分之十，例如，可以为0.9μm、1μm、2μm或3.3μm等。同样的，该过渡区T位于该矩形的长度方向的相对两侧的部分，沿第一方向E的宽度范围也可以上下浮动百分之十，例如可以为2.7μm、5μm、8.8μm等。
掩膜版10在张网的过程中，需要向该掩膜版10位于上述长度方向的两端向外施加拉力(例如施加2N～5N的拉力)，并且该拉力沿上述长度方向的分力较大，沿上述宽度方向的分力较小或者可以为零。本示例中，可以设置该过渡区T位于该矩形的长度方向的相对两侧的部分沿第一方向E的宽度范围，大于该过渡区T位于该矩形的宽度方向的相对两侧的部分沿第一方向E的宽度范围，这样使得该掩膜版10在张网的过程中在长度方向上比在宽度方向上起到更好的应力缓冲作用，可以更好的防止该掩膜版10的有效掩膜区在张网过程中发生变形，从而有利于保证该掩膜版10的精度。
在一些实施例中，为了降低掩膜版在非掩膜图案区02对激光的反光能力，提高其吸光能力，实际在制作第二金属层12时，可以在第二金属层12中添加激光吸收系数较大的金属，例如，铜(Cu)、钨(W)等，从而更有利于对焊接激光的控制。
需要说明的是，本公开各实施例中可以采用电铸工艺制作第二金属层12，第二金属层12的材质可以为镍铁合金，而且还可以包含有硅、锰、钛、氧、碳、磷等微量元素中的一种或多种。示例性的，通过在电铸液中添加Cu 2+、W 6+或W 4+中的至少一种离子，从而在电极的作用下，将Cu 2+、W 6+、W 4+还原为铜(Cu)、钨(W)，并沉积在第一金属层11位于非掩膜图案区02的表面。当然，实际中可以控制电铸沉积速率，来控制第二金属层12中铜(Cu)、钨(W)的含量，例如可以为0.1％。
另外，本领域的技术人员可以理解的是，上述在电铸液中添加Cu 2+和W 6+、W 4+等激光吸收系数较大的离子，对形成的第二金属层12热力学性能影响很小，在降低掩膜版在焊接过程中对激光的反射强度，保证有效焊接的同时，不会对掩膜版的正常掩膜过程造成影响。
本公开一些实施例还提供一种掩膜版组件A，如图11所示，该掩膜版组件A包括框架20和至少一个掩膜版10。其中，框架20中设置 有开口200。掩膜版10为上述任一实施例中的掩膜版10，每个掩膜版10横跨开口200，并在焊接区21与框架20焊接。其中，示例性的，如图11所示，在各掩膜版10沿其长度方向Y的相对两端分别设置一个焊接区21，也即各掩膜版10的两个焊接区21分别位于其掩膜图案区的相对两侧。
示例性的，该掩膜版10大致呈矩形，该掩膜版沿其长度方向Y张网后，利用焊接区21与框架20焊接。其中，张网后的掩膜版10在上述过渡区的厚度约减小0μm～0.1μm(例如也可以是0μm～0.11μm)；和/或，张紧后的掩膜版10位于过渡区的部分沿第一方向E(如图9和图10所示)的尺寸约增加0μm～0.1μm(例如也可以是0μm～0.11μm)。
本实施例提供的掩膜版组件A，使得掩膜版10在张网过程中不易损坏，同时提高了掩膜版10与框架20焊接固定后的稳定性和可靠性。
本公开一些实施例还提供一种掩膜版的制作方法，如图12所示，该制作方法包括：
S1、形成第一金属层11。参见图13，该第一金属层11(第一金属层11的平面图与图4中的掩膜版的平面图基本一致，示意的可以参考图4)从掩膜图案区01延伸至非掩膜图案区02，且该第一金属层11覆盖该非掩膜图案区02。在任一有效掩膜区100内，该第一金属层11包括：多个蒸镀孔101，以及位于相邻的两个蒸镀孔101之间的遮挡条102。
需要说明的是，在掩膜图案区01中包括多个有效掩膜区100的情况下，第一金属层11还包括设置在相邻两个有效掩膜区100之间的间隔部(如图4、图5或图7中示出的间隔部103)。
S2、在第一金属层11的一侧形成第二金属层12，参考图6、图9和图10，该第二金属层12位于非掩膜图案区02内，且至少覆盖第一金属层11位于焊接区21的部分。
通过本实施例中的制作方法，使得所形成掩膜版在非掩膜图案区02内的部分，至少在焊接区21的厚度，大于该掩膜版在有效掩膜区01的遮挡条102的厚度。这样，在将掩膜版10与框架20进行焊接时，改善了因掩膜版10在焊接区21的的厚度过小，激光能量不易控制，而造成的焊接不良(焊穿、虚焊等)的问题，提高了掩膜版10的焊接可靠性。
在一些实施例中，参见图14，上述制作方法的S2包括S21。
S21、在第一金属层11的一侧形成第一胶层13。参见图15，第一胶层13位于掩膜图案区01，且第一胶层13至少覆盖第一金属层11在掩膜图案区01中除蒸镀孔101以外的部分，也即第一胶层13至少覆盖第一金属层11在掩膜图案区01中的遮挡条102和间隔部(如图4、图5或图7中示出的间隔部103)。
可以理解的是，根据实际的涂胶工艺，第一胶层13可以在蒸镀孔101位置处形成镂空，也可以在蒸镀孔101位置形成凹陷，本公开各实施例对此不做限定，只要保证第一胶层13至少覆盖第一金属层11在掩膜图案区01中的遮挡条102和间隔部103即可。
示例性的，参见图16，该S21包括S211～S213。
其中，S211、在第一金属层11的一侧设置模具14，如图17a所示，该模具14位于非掩膜图案区02，且至少覆盖非掩膜图案区02中与掩膜图案区01邻接的过渡区T，也即在第一金属层11的表面位于非掩膜图案区02、且与掩膜图案区01的四周相邻的区域设置模具14。
参考图17a所示，上述模具14在与掩膜图案区01相邻的过渡区T内的厚度，沿第一方向E，从0逐渐增加至H；H的范围约为10μm～27μm。其中，过渡区T沿第一方向E的宽度范围约为1μm～3μm。该第一方向E由过渡区T与掩膜图案区01相接的一侧，指向过渡区T远离掩膜图案区01的一侧。
示例的，如图17a所示，该模具14在过渡区T的部分包括固定斜率的倾斜面U。
S212、在设置有模具14的第一金属层11上形成第一胶层13。
参考如图17b所示，上述第一胶层13包括：覆盖第一金属层11在掩膜图案区01中除蒸镀孔101以外的部分的主胶层图案130a，以及延伸至过渡区T的延伸胶层图案130b。该延伸胶层图案130b覆盖模具14的上述倾斜面U。
S213、去除上述模具14，保留第一胶层13，形成如图17c所示的结构。
在此情况下，参考图17c所示，上述第一胶层13，在过渡区T形成一个悬空倾斜面。以下实施例均是以此为例进行说明的。
上述制作方法的S2还包括S22～S23、参考图14和图18a，采用电铸工艺，在形成有第一胶层13的第一金属层11上形成第二金属层12，使第二金属层12覆盖第一金属层11位于非掩膜图案区02的部分，也即在形成有第一胶层13的第一金属层11位于非掩膜图案区02的裸露表面上形成第二金属层12。
参考图17c所示，由于第一胶层13在过渡区T形成一个悬空倾斜面，从而在采用电铸工艺形成第二金属层12时，受第一胶层13在过渡区T的悬空倾斜面的限制，参考图18a，使得形成的第二金属层12在过渡区T形成沿靠近掩膜图案区01的一侧到远离掩膜图案区01的方向E上厚度递增的坡面。从而使得掩膜版在张网时，通过该过渡区T的坡面部分，应力逐渐变化，进而减缓了掩膜版因厚度急剧变化而导致的应力大幅变化，避免了掩膜版发生褶皱等问题。
示例的，对于采用电铸工艺形成上述第二金属层130的过程而言：
首先，在电铸进行前，利用酒精、去离子风对形成有第一胶层13的第一金属层11进行清洗。
然后，将上述形成有第一胶层13的第一金属层11放置在承载电极上。当然，也可以在形成第一胶层13之前，将第一金属层11放置在承载电极上。接下来，参见图16，通过S221、将由承载电极承载的形成有第一胶层13的第一金属层11放置于添加有铜离子(例如Cu 2+)和钨离子(例如W 6+、W 4+)中的至少一种离子的电铸液中，进行电铸。
示例性的，在电铸过程中，将第一金属层11和承载电极整体作为阴极，选择需要进行电铸的金属(例如可以为镍铁合金)作为阳极。当然，电铸液中含有阳极金属离子的溶液，在电源的作用下，电铸液中的金属离子在第一金属层11裸露的部分还原成金属并沉积于表面，形成上述第二金属层12。
在电铸完成后，可以采用机械或者激光的方式，将承载电极与掩膜版进行分离即可。
可以理解的是，通过在电铸液中添加Cu 2+、W 6+等激光吸收系数较大的离子，使得形成的第二金属层12中具有铜(Cu)、钨(W)，从而能够降低掩膜版在增厚金属层12对激光的反光能力，提高其吸光能力，更有利于对焊接激光的控制。
最后，S23、除去第一胶层13，以形成如图18b所述的掩膜版10。
需要说明的是，对于上述掩膜版的制作方法中的其他相关内容，例如，第一金属层、第二金属层的厚度等相关内容，可以参考前述掩膜版实施例中的对应部分；对于前述掩膜版实施例中的其他相关设置结构，可以参考上述掩膜版的制作方法，进行工艺调整等，此处不再一一赘述。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (18)

  1. 一种掩膜版，具有掩膜图案区以及位于所述掩膜图案区周侧的非掩膜图案区；
    所述掩膜图案区包括至少一个有效掩膜区；在任一有效掩膜区内，所述掩膜版包括：
    多个蒸镀孔；以及，
    位于相邻的两个蒸镀孔之间的遮挡条；
    所述掩膜版在所述非掩膜图案区内设置有焊接区；
    所述掩膜版在所述非掩膜图案区内的部分，至少在所述焊接区的厚度，大于所述掩膜版在所述有效掩膜区的遮挡条的厚度；所述厚度是指对应部位沿垂直于所述掩膜版所在平面的方向的尺寸。
  2. 根据权利要求1所述的掩膜版，其中，所述掩膜图案区中包括两个以上的所述有效掩膜区；
    在所述掩膜图案区内，所述掩膜版包括：
    位于相邻的两个所述有效掩膜区之间的间隔部，所述间隔部的厚度与所述遮挡条的厚度相同。
  3. 根据权利要求1或2所述的掩膜版，其中，所述掩膜版包括：
    第一金属层，所述第一金属层在所述有效掩膜区中至少包括所述遮挡条，且所述第一金属层覆盖所述非掩膜图案区；
    与所述第一金属层层叠设置的第二金属层，所述第二金属层位于所述非掩膜图案区内，且至少覆盖所述第一金属层位于所述焊接区的部分。
  4. 根据权利要求3所述的掩膜版，其中，所述第二金属层覆盖所述第一金属层位于所述非掩膜图案区的部分。
  5. 根据权利要求3或4所述的掩膜版，其中，所述非掩膜图案区中包括：与所述掩膜图案区邻接的过渡区；
    所述掩膜版在所述过渡区的厚度沿第一方向从第一厚度逐渐递增大至第二厚度；所述第一方向由所述过渡区与所述掩膜图案区相接的一侧，指向所述过渡区远离所述掩膜图案区的一侧。
  6. 根据权利要求5所述的掩膜版，其中，
    所述第一厚度等于所述遮挡条的厚度；
    所述第二厚度等于所述遮挡条的厚度和所述第二金属层中除所述过渡区之外的部分的厚度之和。
  7. 根据权利要求5或6所述的掩膜版，其中，所述焊接区按照以 下至少一种方式设置：
    所述焊接区与所述过渡区不交叠；和/或，
    所述焊接区的数量为两个，两个所述焊接区分别位于所述掩膜图案区的相对两侧。
  8. 根据权利要求5～7中任一项所述的掩膜版，其中，
    所述过渡区沿所述第一方向的宽度范围约为：1μm～8μm。
  9. 根据权利要求5～8中任一项所述的掩膜版，其中，所述掩膜图案区大致呈矩形；
    其中，所述过渡区位于所述矩形的宽度方向的相对两侧的部分，沿所述第一方向的宽度范围约为：1～3μm；和/或，
    所述过渡区位于所述矩形的长度方向的相对两侧的部分，沿所述第一方向的宽度范围约为：3μm～8μm。
  10. 根据权利要求5～9中任一项所述的掩膜版，其中，所述掩膜版在所述非掩膜图案区中，除所述过渡区之外的部分的厚度范围约为20μm～30μm。
  11. 根据权利要求3～10中任一项所述的掩膜版，其中，所述第二金属层的材料包括铜或钨中的至少一种。
  12. 根据权利要求3～11中任一项所述的掩膜版，其中，所述第一金属层的厚度范围约为：3μm～10μm。
  13. 根据权利要求1～12中任一项所述的掩膜版，其中，所述掩膜版在所述有效掩膜区的所述遮挡条的厚度范围约为：3μm～10μm。
  14. 一种掩膜版组件，包括：
    框架，所述框架中设置有开口；
    至少一个如权利要求1～13中任一项所述的掩膜版，每个掩膜版横跨所述开口，并利用焊接区与所述框架焊接。
  15. 一种掩膜版的制作方法，所述掩膜版具有掩膜图案区以及位于所述掩膜图案区周侧的非掩膜图案区；所述掩膜图案区包括至少一个有效掩膜区；所述掩膜版在所述非掩膜图案区内设置有焊接区；
    所述制作方法包括：
    形成第一金属层；所述第一金属层从所述掩膜图案区延伸至所述非掩膜图案区，且覆盖所述非掩膜图案区；在任一有效掩膜区内，所述第一金属层包括：多个蒸镀孔，以及位于相邻的两个蒸镀孔之间的遮挡条；
    在所述第一金属层的一侧形成第二金属层，所述第二金属层位于所述非掩膜图案区内，且至少覆盖所述第一金属层位于所述焊接区的部分，以使所述掩膜版在所述非掩膜图案区内的部分，至少在所述焊接区的厚度，大于所述掩膜版在所述有效掩膜区的遮挡条的厚度。
  16. 根据权利要求15所述的掩膜版的制作方法，所述在所述第一金属层的一侧形成第二金属层，包括：
    在所述第一金属层的一侧形成第一胶层；所述第一胶层位于所述掩膜图案区，且至少覆盖所述第一金属层在所述掩膜图案区中除所述蒸镀孔以外的部分；
    采用电铸工艺，在形成有所述第一胶层的第一金属层上形成第二金属层，使所述第二金属层覆盖所述第一金属层位于所述非掩膜图案区的裸露表面；
    去除所述第一胶层。
  17. 根据权利要求16所述的掩膜版的制作方法，其中，所述在所述第一金属层的一侧形成第一胶层，包括：
    在所述第一金属层的一侧设置模具；所述模具位于所述非掩膜图案区，且至少覆盖所述非掩膜图案区中与所述掩膜图案区邻接的过渡区；其中，所述模具在所述过渡区内的厚度沿所述第一方向从0逐渐增加至H；H的范围约为10μm～27μm；所述过渡区沿所述第一方向的宽度范围约为1μm～3μm；所述第一方向由所述过渡区与所述掩膜图案区相接的一侧，指向所述过渡区远离所述掩膜图案区的一侧；
    在设置有所述模具的第一金属层上形成所述第一胶层；其中，所述第一胶层包括：覆盖所述第一金属层在所述掩膜图案区中除所述蒸镀孔以外的部分的主胶层图案，以及延伸至所述过渡区的延伸胶层图案；所述延伸胶层图案覆盖所述模具位于所述过渡区的部分；
    去除所述模具，保留所述第一胶层。
  18. 根据权利要求16或17所述的掩膜版的制作方法，其中，
    所述采用电铸工艺，在形成有所述第一胶层的第一金属层上形成第二金属层，包括：
    将形成有所述第一胶层的第一金属层放置于具有铜离子或钨离子中的至少一种的电铸液中进行电铸，以形成包含有铜或钨中的至少一种材料的第二金属层。
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