WO2022133994A1 - 掩模板遮片和掩模板设备 - Google Patents

掩模板遮片和掩模板设备 Download PDF

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Publication number
WO2022133994A1
WO2022133994A1 PCT/CN2020/139360 CN2020139360W WO2022133994A1 WO 2022133994 A1 WO2022133994 A1 WO 2022133994A1 CN 2020139360 W CN2020139360 W CN 2020139360W WO 2022133994 A1 WO2022133994 A1 WO 2022133994A1
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WO
WIPO (PCT)
Prior art keywords
rib
mask
reticle
sub
area
Prior art date
Application number
PCT/CN2020/139360
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English (en)
French (fr)
Inventor
牛彤
嵇凤丽
罗昶
徐倩
张国梦
黄琰
李剑波
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Publication date
Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2020/139360 priority Critical patent/WO2022133994A1/zh
Priority to CN202080003670.2A priority patent/CN114981468B/zh
Priority to US17/436,756 priority patent/US20220205076A1/en
Publication of WO2022133994A1 publication Critical patent/WO2022133994A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present disclosure relates to the field of display technology and mask technology, and in particular, to a mask mask and a mask device.
  • an organic light emitting diode (Organic Light Emitting Diode, OLED) display device is one of the hot spots in the research field of flat panel display devices today.
  • OLED Organic Light Emitting Diode
  • Narrow bezels and special-shaped displays are urgent needs in the era of flexible displays, followed by many problems in mask accuracy, special-shaped occlusion, and web coverage.
  • the mask assembly used for evaporation is usually assembled from a mask frame, a mask mask, a mask (such as a high-precision metal mask (FMM)), etc.
  • FMM high-precision metal mask
  • In the production process of the mask mask it is first Under the action of external force, it is opened to reduce the sag, and then fixed on the mask frame by welding, for example.
  • FMM deposits the luminescent material on the corresponding position of the glass substrate by evaporation, and the area that does not need to emit light can be blocked by the mask plate.
  • Embodiments of the present disclosure provide a mask mask for vapor deposition on a substrate, comprising:
  • the plurality of first ribs and the plurality of second ribs intersect with each other to form a plurality of opening areas
  • the mask mask includes a first area for evaporating the first exposure area on the substrate and a second area for evaporating the second exposure area on the substrate
  • a third rib is provided at the boundary between the first area and the second area, and the third rib is used to shield the first exposure area on the substrate an overlapping exposure area between the third rib and the second exposure area
  • the third rib includes a first sub-rib and a second sub-rib and a spacer that separates the first sub-rib and the second sub-rib
  • the third rib has a The width is greater than the width of the first rib.
  • the boundaries of the first and second regions extend along a first direction, and the first and second sub-ribs extend parallel to the first rib.
  • the spacer extends parallel to the first sub-rib and the second sub-rib along the first direction.
  • the spacer includes at least one through hole extending along an edge of the opening area adjacent to the third rib adjacent to the third rib, the through hole being located at the The length in the first direction is less than or equal to the length of the side adjacent to the third rib of the opening area adjacent to the third rib.
  • the mask cover sheet further includes a shielding piece for shielding the through hole, the shielding piece is located on a side of the third rib away from the substrate, and the shielding piece is vertical The orthographic projection on the third rib in the direction of the mask mask covers the through hole of the third rib.
  • the shutter is constructed of a non-magnetic material.
  • the spacer includes at least one groove extending along an edge of an open area adjacent to the third rib adjacent the third rib, the groove being in the first The length in the direction is less than or equal to the length of the side adjacent to the third rib of the opening area adjacent to the third rib.
  • the depth of the groove is 0.5 to 0.8 times the depth of the first sub-rib.
  • the width of the first sub-rib is 1 to 1.2 times the width of the first rib parallel to the first sub-rib and the second sub-rib;
  • the width of the second sub-rib is 1 to 1.2 times the width of the first rib parallel to the first and second sub-ribs.
  • first rib and the second rib are perpendicular to each other and are integral.
  • the reticle mask further includes a fourth rib, the fourth rib is located at an edge of the reticle mask and is parallel to the first rib or the second rib.
  • the width of the fourth rib is 1 to 1.2 times the width of the first rib or the second rib parallel to the fourth rib.
  • Embodiments of the present disclosure also provide a mask apparatus, including:
  • the at least one mask is disposed on the side of the mask cover facing the substrate, and is configured to cover a plurality of opening areas of the mask cover.
  • the reticle apparatus further comprises:
  • a reticle frame configured to support and secure the reticle mask and the reticle
  • the magnetic plate is located on the opposite side of the substrate from the mask mask
  • the reticle cover and the reticle include magnetic materials, and the magnetic plate is configured to attract the reticle and the reticle toward the substrate by magnetic force.
  • the reticle apparatus further comprises: an alignment mask connected to the reticle frame and arranged side by side with the reticle for providing the reticle an alignment reference, wherein the mask mask further includes a fourth rib, the fourth rib is located at the edge of the mask mask and is parallel to the first rib or the second rib, the fourth rib
  • the orthographic projection of the ribs in the direction perpendicular to the reticle mask overlaps the orthographic projection of the alignment mask in the direction perpendicular to the reticle mask.
  • FIG. 1 shows a schematic diagram of evaporating luminescent materials on a substrate by using a mask assembly
  • FIG. 2 schematically shows the effect of the lifting of the FMM from the substrate on the shadow area
  • FIG. 4 shows a schematic diagram of a plurality of exposure regions of the film layer structure
  • Figure 5 shows an example of a reticle mask adapted to multiple exposure areas
  • FIG. 6A schematically shows a comparison of ribs at overlapping areas corresponding to exposed areas in a reticle mask with ribs in a normal area
  • FIG. 6B schematically shows the comparison of ribs near the short sides of the reticle frame in the reticle mask with ribs in the common area
  • FIG. 7 An exemplary bonding state of the FMM and the substrate is shown in FIG. 7;
  • FIG. 8 shows a schematic diagram of a third rib of a mask mask according to an embodiment of the present disclosure
  • FIG. 9 shows a schematic diagram of a fourth rib of a mask mask according to an embodiment of the present disclosure.
  • FIG. 10 shows a schematic diagram of the mask mask as shown in FIG. 8 clamping the mask on the substrate
  • FIG. 11 shows a schematic diagram of a third rib of a mask mask according to other embodiments of the present disclosure.
  • FIG. 12 shows a schematic diagram of the mask mask as shown in FIG. 11 clamping the mask on the substrate
  • FIG. 13 shows a schematic structural diagram of a mask frame according to an embodiment of the present disclosure.
  • FIG. 14 shows a schematic plan view of a reticle mask in accordance with an embodiment of the present disclosure.
  • the expressions “located on the same layer” and “disposed on the same layer” generally mean that the first part and the second part may use the same material and may be formed by the same patterning process.
  • the expressions “located on different layers”, “disposed of different layers” generally mean that the first part and the second part are formed by different patterning processes.
  • the organic light emitting layer in the organic light emitting diode (OLED) display panel is an indispensable structure in the film layer structure for realizing light emission.
  • the organic light-emitting layer can be excited to emit light by controlling the voltage applied to the anode and the cathode.
  • the organic light-emitting layer can be produced, for example, by vapor deposition. In the process of evaporating the organic light-emitting layer, it needs to be realized by means of a mask (or a high-precision metal mask (FMM)) assembly.
  • Evaporation is currently one of the main processes for fabricating films such as luminescent materials on display panels.
  • Figure 1 shows a schematic diagram of the principle of vapor deposition using a mask assembly.
  • Evaporation source 10 is shown in FIG. 1 , which evaporates material 101 toward a substrate 20 (eg, a glass substrate) positioned above evaporation source 10 .
  • a mask 30 eg, a high-precision metal mask (FMM)
  • FMM high-precision metal mask
  • the mask mask 100 is used to support and fix the mask 30 on the lower surface of the substrate 20 .
  • the mask sheet 100 may be made of a metal material, and the mask sheet 100 located below the substrate 20 may be attracted by the magnetic plate 40 disposed above the substrate 20 , thereby holding the mask sheet 30 on the lower surface of the substrate 20 .
  • the reticle mask 100 can also block non-light emitting areas on the substrate where deposition of the vapor deposition material is not desired.
  • the reticle mask 100 may be integral, and its relative positional relationship with the reticle 30 is shown in FIG. 3 . As can be clearly seen in FIG.
  • the reticle mask 100 mainly consists of a plurality of first ribs 11 extending along a first direction (eg, the x-direction) and a plurality of ribs 11 extending along a second direction (eg, the y-direction)
  • the second rib 12 is formed.
  • the mask plate 30 should be in close contact with the lower surface of the substrate 20 , but in practice, due to various reasons, a part of the mask plate 30 may be warped, so that there is an obvious gap between the mask plate 30 and the lower surface of the substrate 20 . Such gaps may cause mask 30 to create shadows on substrate 20 . As shown in FIG. 2 , assuming that the mask 30 is in close contact with the lower surface of the substrate 20 (see the left in FIG.
  • the boundary of the pattern formed by the material on the substrate 20 through the mask 30 is clear, as shown on the left The vertical dotted line is shown; and when the mask plate 30 ′ is deflected, a gap is generated between the mask plate 30 ′ and the lower surface of the substrate 20 , due to the existence of the above-mentioned gap between the mask plate 30 ′ and the lower surface of the substrate 20 , the boundary of the pattern formed by the material on the substrate 20 through the mask 30 ′ is no longer clear, but there are inner shadow areas and outer shadow areas (see the right side in FIG. 2 ). Also, as the gap increases, the extent of the shadow area also increases, which will cause defects.
  • the film layer structure (such as thin film transistors, etc.) on the substrate 20 needs to be completed by an exposure-etching process. Due to the limitations of the process and equipment, the film layer structure on a substrate 20 may require multiple sub-regional exposures to achieve, that is, only a part of the region on the substrate 20 is exposed each time, and multiple exposures are used to achieve Exposure of the entire substrate 20 is achieved. We can divide the substrate 20 into different exposure areas for different exposures. For example, the area on the substrate 20 that is exposed for the first time may be called the first exposure area 21, and the area that is exposed for the second time may be called the second exposure area. The exposure area 22, if there is an area exposed for the third time, can be called the third exposure area 23, as shown in FIG. 4 .
  • a transition area is set, and this transition area will be exposed in two exposures, so it can also be called an overlapping exposure area.
  • a first overlapping exposure area 24 between the first exposure area 21 and the second exposure area 22 and a second exposure area between the second exposure area 22 and the third exposure area 23 are shown Overlap exposure area 25 .
  • the presence of overlapping exposure areas can prevent the edges of the active layer pattern from being overexposed, but also allows for the presence of additional edge areas at the boundaries between adjacent exposure areas.
  • the rib width of the reticle mask 100 is larger at the location corresponding to this area, so as to better cover such an edge area.
  • An example of a reticle mask 100 is shown in FIG. 5 .
  • the rib widths of the reticle mask 100 are wider at locations corresponding to boundaries between adjacent exposure areas than at locations corresponding to general areas in the exposure areas.
  • FIG. 6A This difference in rib width of the reticle mask 100 can be more clearly observed in FIG. 6A.
  • the rib width of the reticle mask 100 at a position corresponding to the boundary between adjacent exposure areas is denoted by A
  • the rib width at a position corresponding to a general area in the exposure area is denoted by B.
  • the inventors have discovered that it is this difference in rib width that causes potential defects in evaporation. This will be described below with reference to FIG. 7 .
  • the wider ribs of the mask 100 are referred to as wide ribs 17
  • the narrow ribs are referred to as narrow ribs 18 . It is precisely because of the difference in the width of the ribs that when the mask mask 100 holds the mask 30 on the lower surface of the substrate 20 , a large gap is generated between the mask 30 and the substrate 20 near the wide ribs 17 . , causing evaporation defects.
  • the following derivation is based on the solution in which the reticle 30 is held by the magnetic plate 40 by magnetically attracting the reticle 100 from the side of the substrate 20 away from the reticle 100 .
  • the formula for calculating the magnetic force of the magnetic plate 40 on a certain area on the mask plate 30 can be simplified as:
  • ⁇ represents the vacuum magnetic permeability (constant)
  • B 0 represents the magnetic induction intensity of the region
  • S represents the contact area between the magnetic field and the magnetic conductor.
  • zone 1 is generally farther from the center than zone 2, so zone 2 sags more than zone 1 under gravity, that is, zone 1 is closer to the lower surface of substrate 20 than zone 2.
  • the magnetic induction intensity B 01 of the area 1 and the magnetic induction intensity B 02 of the area 2 satisfy the relational expression B 01 >B 02 , so it can be deduced that the magnetic force F 1 received by the area 1 and the magnetic force F 2 received by the area 2 satisfy the relation expression F 1 >kF 2 .
  • Both the area 1 and the area 2 on the mask 30 are subjected to the combined force of the magnetic force and the gravitational force, namely:
  • the mask plate 30 After the mask plate 30 enters the vapor deposition chamber, it is attracted by the magnetic force and is attached to the substrate, and the acceleration a 1 after the area 1 is attracted and the acceleration a 2 after the area 2 is attracted can be obtained to satisfy the relationship:
  • the wide ribs 17 on the mask mask 100 will adhere to the substrate 20 first under the action of magnetic force, and the narrow ribs 18 will adhere to the substrate 20 later.
  • the wide rib 14 presses the mask 30 on the lower surface of the substrate 20, which prevents the mask 30 from flowing after being attracted by the magnetic force, which is not conducive to the stretching of the mask 30.
  • a gap is formed therebetween, thereby causing defects in shadow regions near the wide rib 17 after evaporation.
  • Embodiments of the present disclosure provide a reticle mask 100' for vapor deposition on a substrate 20.
  • the mask mask 100' includes: a plurality of first ribs 11 extending along a first direction and a plurality of second ribs 12 extending along a second direction, the second direction intersecting the first direction ( For example, the first direction is the x direction, and the second direction is the y direction).
  • the plurality of first ribs 11 and the plurality of second ribs 12 cross each other to form a plurality of opening areas 16 .
  • the reticle mask 100' includes a first region 110 and a second region 120.
  • the first area 110 is used for evaporating the first exposure area 21 on the substrate 20
  • the second area 120 is used for evaporating the second exposure area 22
  • a third rib 13 is provided at the boundary between the first area 110 and the second area 120 , and the third rib 13 is used to block the overlapping exposure between the first exposure area 21 and the second exposure area 22 on the substrate 20 .
  • the third rib 13 includes a first sub-rib 131 and a second sub-rib and a spacer 133 that separates the first sub-rib 131 and the second sub-rib 132 .
  • the width of the third rib 13 is greater than the width of the first rib.
  • the boundary between the first region 110 and the second region 120 of the reticle mask 100' extends along a first direction (eg, the x-direction).
  • the third rib 13 and the first rib 11 both extend along the first direction and are parallel to each other.
  • the first sub-rib 131 and the second sub-rib 132 and the spacer 133 also extend parallel to the first direction.
  • the first area 110 corresponding to the first exposure area 21 on the substrate 20 and the first area 110 corresponding to the second exposure area 22 on the substrate 20 on the mask mask 100 ′ The boundary of the two regions 120 does not take the form of the wide ribs 17 in the previous example, but the third ribs 13 in the form of composite sub-ribs.
  • the width of the solid portion of the third rib 13 (shown as C on FIG. 8 ) is significantly smaller than the width of the wide rib 17 in the above example due to the presence of the spacer 133 .
  • FIG. 10 shows a schematic diagram of the principle of fixing the mask 30 on the substrate 20 by the mask mask 100' having the above-mentioned third ribs 13 .
  • the first sub-rib 131 and the second sub-rib 132 are attracted by the magnetic plate 40 respectively, and the time required to move is longer than that of the wide rib 17 , so that the mask plate 30 receives the magnetic plate 40 There is sufficient time to stretch after the attraction, thereby reducing the warpage of the mask 30 and the gap between the mask 30 and the substrate 20 . This helps to suppress the shadow area effect described above and improve the above-mentioned vapor deposition defects.
  • the width of the first sub-rib 131 is 1 to 1.2 times the width of the first rib 11 parallel to the first sub-rib 131 and the second sub-rib 132 .
  • the width of the second sub-rib 132 may also be 1 to 1.2 times the width of the first rib 11 parallel to the first sub-rib 131 and the second sub-rib 132 . This can make the width of the first sub-rib 131 and the second sub-rib 132 as close as possible to the width of the first rib 11 or the second rib 12 in the general area of the reticle mask 100'.
  • the width of the first rib 11 and the width of the second rib 12 may be different.
  • the embodiments of the present disclosure are not limited thereto, and the widths of the first sub-rib 131 and the second sub-rib 132 may also be in other numerical ranges.
  • the spacer 133 includes at least one through hole 136 , and the through hole may be, for example, a rectangular hole, a circular hole or a hole of other shapes.
  • Figure 14 presents a schematic plan view of reticle mask 100'. It can be seen from FIG. 14 that the through hole 136 may extend along the side 161 of the opening area 16 adjacent to the third rib 13 adjacent to the third rib 13, the through hole 136 being in the first direction The length of is less than or equal to the length of the side 161 adjacent to the third rib 13 of the opening area 16 adjacent to the third rib 13 .
  • the length of the through hole 136 in the first direction is less than or equal to the length of the side 161 adjacent to the third rib 13 of the opening area 16 adjacent to the third rib 13 .
  • the third rib 13 may enclose an open area 16 together with the adjacent first rib 11 and the second rib 12 .
  • the opening length of the through hole 136 of the third rib 13 may be the same as or shorter than the side length of the opening area 16 defined by the third rib 13 .
  • the above-mentioned through holes 136 are not provided at the intersections 135 of the third rib 13 and other ribs (eg, the first rib 11 or the second rib 12).
  • the lengths of the first sub-rib 131 and the second sub-rib 132 in the third rib 13 may be the same as or shorter than the side length of the opening area 16 defined by them.
  • a shutter 134 (or can be referred to as the spacer 133) may also be provided for shielding the spacers 133.
  • the shutter 134 is located on the side of the third rib 13 away from the mask plate 30 (or on the side of the third rib 13 away from the substrate 20 ), and the shutter 134 is perpendicular to the The orthographic projection on the third rib 13 in the direction of the mask sheet 100 ′ covers the through hole 136 of the third rib 13 .
  • the various ribs may be elongated.
  • the spacer 133 (or the through hole 136 ) may also have an elongated shape.
  • the shutter 134 may also include an elongated shape corresponding to the through hole 136 on the third rib 13 .
  • the width and length of the shutter 134 should exceed the width and length of the through hole 136 on the third rib 13, so as to completely cover it.
  • the width of the shutter 134 may not exceed the range of the total width of the third rib 13 , that is, not exceed the outer edges of the first sub-rib 131 and the second sub-rib 132 .
  • the shutter 134 may be fixed on the surface of the third rib 13 on the side facing away from the substrate 20 by pressing. To secure and hold the shutter 134 , the shutter 134 may have a support end 137 .
  • the mask cover 100 ′ may be fixed on the mask frame 50 , in this case, the mask frame 50 may also be provided with a receiving groove for receiving the support end 137 of the cover 134 138.
  • the accommodating groove 138 is, for example, a sinking groove.
  • the supporting end 137 of the shutter 134 can be fixed in the accommodating groove 138 on the mask frame 50, and ensure that the shutter 134 and the mask sheet 100' are tensioned together to make the shutter 134 abut against the mask sheet 100' on the surface on the side facing away from the substrate 20 .
  • the mask mask 100' may further include a fourth rib 19, the fourth rib 19 is located at the edge of the mask mask 100' and is connected to the The first rib 11 or the second rib 12 is parallel.
  • a comparison can be made with the previous examples shown in Figures 6A and 6B.
  • the edge portion of the reticle mask 100 at a position close to the reticle frame 50 also adopts the wide rib 17'.
  • This wide rib 17 ′ is similar to the wide rib 17 in the example shown in FIG.
  • the width of the fourth rib 19 may be 1 to 1.2 times the width of the first rib 11 or the second rib 12 parallel to the fourth rib.
  • the fourth rib 19 still maintains the overlap with the alignment mask 60, or in other words, the orthographic projection of the fourth rib 19 in the direction perpendicular to the reticle mask 100' is the same as the alignment mask 60 in the direction perpendicular to the reticle mask 100'.
  • the orthographic projections in the direction of the sheet 100' overlap each other.
  • the fourth rib 19 leaves the position of the vapor deposition film thickness test opening 61, therefore, the vapor deposition film thickness test opening 61 only needs to be arranged in the alignment mask 60, and does not need to be arranged in the reticle mask 100' .
  • FIGS. 11 and 12 illustrate a reticle mask 100 ′′ according to another embodiment of the present disclosure.
  • the spacer portion 133' of the third rib 13' is in the form of a blind hole (ie, the spacer portion 133' includes at least one groove 136'), rather than a through hole form.
  • the spacer 133 ′ does not completely separate the first sub-rib 131 ′ and the second sub-rib 132 ′, and there is still a gap between the first sub-rib 131 ′ and the second sub-rib 132 ′.
  • the grooves 136&apos may be open toward the substrate 20, for example, during evaporation operations.
  • the depth of the groove 136' may be 0.5 to 0.8 times the total thickness T of the reticle mask 100" (eg, the thickness of the first sub-rib 131' or the second sub-rib 132').
  • the groove 136' for example It can be fabricated by etching. This design can also reduce the local warpage of the mask 30 due to the difference in the width of the ribs and the larger gap between the mask 30 and the substrate 20. In this embodiment, due to the connection Due to the existence of the portion 139, the vapor deposition material will not pass through the spacer portion 133' to reach the substrate 20.
  • the groove 136' can be along the The side 161 of the opening area 16 adjacent to the third rib 13 ′ extends adjacent to the third rib 13 ′, and the length of the groove 136 ′ in the first direction (for example, the x direction) is less than or equal to the The length of the side 161 adjacent to the third rib 13' of the open area 16 adjacent to the third rib 13' is described. This is similar to the previous example in which the spacer includes the through hole 136. According to the present disclosure Other structures in the mask mask 100 ′ in the foregoing embodiments can be combined with the mask mask 100 ′′ shown in FIGS. 11 and 12 , and details are not repeated here.
  • the width of the third rib 13 may be greater than 6 mm, and the width of the first rib 11 may be greater than 3 mm.
  • the thickness of the reticle mask 100', 100" may be, for example, 100 microns to 200 microns.
  • the thickness of the mask 134 may be, for example, between 30 microns and 60 microns.
  • the mask 134 may be composed of a non-magnetic material , for example, including but not limited to stainless steel, aluminum alloy, etc. This can prevent the magnetic plate 40 from attracting the shutter 134 and causing the mask shutters 100 ′, 100 ′′ to be attracted to the substrate 20 too quickly to cause warping of the mask 30 song.
  • the reticle masks 100 ′, 100 ′′ and the reticle 30 may include magnetic materials to be attracted by the magnetic plate 40 .
  • the first sub-rib 131 and the second sub-rib 132 may extend in parallel with the first rib 11 or the second rib 12 . This facilitates the opening area 16 of the mask mask 100', 100" to form a regular shape.
  • the spacers 133, 133' of the third ribs 13, 13' and the first sub-ribs 131, 131' It extends parallel to the second sub-ribs 132 and 132'.
  • the first rib 11 and the second rib 12 may be perpendicular to each other and form an integral body.
  • Embodiments of the present disclosure also provide a mask assembly 200 .
  • the mask assembly 200 includes: the mask masks 100 ′, 100 ′′ as described in any of the previous embodiments; and at least one mask 30 , the at least one mask 30 is disposed on the mask
  • One side of the stencil masks 100', 100" is configured to cover the plurality of opening regions 16 of the mask masks 100', 100".
  • the mask 30 is covered by the mask masks 100', 100". It is held on the surface of the substrate 20 .
  • the third ribs 13, 13' and the fourth rib 19 are not shown in FIG.
  • the reticle assembly 200 may further include: a reticle frame 50 and an alignment mask 60 .
  • the reticle frame 50 is configured to support and fix the reticle masks 100 ′, 100 ′′, and the alignment mask 60 is connected to the reticle frame 50 .
  • the mask assembly 200 includes a mask frame 50 and a plurality of masks 30 fixed on the mask frame 50 .
  • These masks 30 may, for example, each be in the shape of a stripe, and may include a mask pattern area 31 and a bonding area 32.
  • the mask pattern region 31 may be formed with an evaporation pattern for evaporating a film layer such as a luminescent material.
  • the fixing regions 32 are located at both ends of the mask 30 and are used for fixing to the mask frame 50 , for example, by welding to fix the mask frame 50 .
  • the reticle masks 100', 100" are located on the side of the reticle 30 facing the reticle frame 50. A plurality of reticle 30 can be arranged in parallel.
  • the reticle frame 50 has, for example, a rectangular shape
  • the reticle frame 50 has a first frame 51 and a second frame 52 opposite to each other and a third frame 53 and a fourth frame 54 opposite to each other.
  • the fixing areas 32 at both ends of the mask 30 are respectively fixed to the first frame 51 of the mask frame 50 and the second frame 52.
  • the alignment mask 60 may also have an elongated shape, and in the example of FIG. On the three borders 53 and the position close to the fourth border 54.
  • the orthographic projections of the two alignment masks 60 in the direction perpendicular to the reticle masks 100' and 100" are respectively aligned with the reticle frame 50.
  • the alignment mask 60 is used to realize the mask 30 in the case of the netting Alignment masks 60 may be arranged side by side with the reticle 30. For example, in the example shown in FIG. 13, two alignment masks 60 are provided. After fixing the reticle 30 to the reticle frame 50 Before mounting, the alignment mask 60 can be tensioned and fixed on the mask frame 50, and the alignment marks on the alignment mask 60 can be used as the mask 30 when the mask 30 is fixed on the mask frame 50. The alignment reference with respect to the mask frame 50 .
  • the first ribs 11 of the mask sheets 100 ′, 100 ′′ may extend in a direction parallel to the extending direction of the mask sheets, and may be used to block gaps between adjacent mask sheets 30 .
  • the fourth rib 19 of the reticle 100', 100" may be located at the edge portion 190 of the reticle 100', 100" and parallel to the first rib 11 or the second rib 12, The fourth rib 19 may at least partially overlap the alignment mask 60 .
  • the mask assembly may further include a blocking member 134 for blocking the spacing portion 133 of the mask mask 100 ′, and the blocking member 134 is located on the third rib 13 away from the mask sheet 30 .
  • the orthographic projection of the shutter 134 on the third rib 13 in the direction perpendicular to the mask sheet 100', 100" covers the spacer 133 of the third rib 13.
  • the reticle frame 50 may also be provided with a receiving groove 138 for receiving the support end 137 of the shutter 134.
  • the shutter 134 may be connected to the receiving groove 138 of the reticle frame 50, for example by securing the support end 137 to the reticle frame 50.
  • Mask frame 50 .
  • Embodiments of the present disclosure also provide a mask apparatus.
  • the reticle apparatus may include: reticle masks 100 ′, 100 ′′ as described in any of the above embodiments; and at least one reticle 30 disposed on the reticle masks 100 ′, 100 The side facing the substrate 20 of ” is configured to cover the plurality of opening areas 16 of the mask mask 100 ′, 100 ′′.
  • the reticle apparatus may further include: a reticle frame 50 configured to support and fix the reticle masks 100', 100" and the reticle 30; and a magnetic A plate 40, the magnetic plate 40 is located on the opposite side of the substrate 20 from the reticle masks 100', 100".
  • the reticle masks 100 ′, 100 ′′ and the reticle 30 include magnetic materials, and the magnetic plate 40 is configured to attract the reticle 30 and the reticle masks 100 ′, 100 ′′ toward the substrate 20 by magnetic force .
  • the reticle apparatus may further include: an alignment mask 60 connected to the reticle frame 50 and arranged side by side with the reticle 30 for all
  • the mask 30 provides an alignment reference.
  • the mask masks 100', 100" further include fourth ribs 19, which are located at the edge 190 of the mask masks 100', 100" and are connected with the first ribs 11 or the first ribs 19.
  • the two ribs 12 are parallel, and the orthographic projection of the fourth rib 19 in the direction perpendicular to the reticle 100 ′, 100 ′′ is the same as the alignment mask 60 in the direction perpendicular to the reticle 100 ′ , 100" of the orthographic overlap in the direction.
  • the opening areas 16 correspond to the display panel units, and in the part where the mask 30 falls into each opening area 16 Patterns, such as film layers for forming individual pixel units, may be provided. In the example shown in FIG. However, this is only illustrative, for example, the opening area 16 may also be arranged such that the long sides of the rectangle are arranged in line with the extending direction of the third rib 13 .

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Abstract

本申请提供一种用于在基板上蒸镀的掩模板遮片，包括：沿着第一方向延伸的多个第一肋条；和沿着第二方向延伸的多个第二肋条，所述第二方向与所述第一方向相交；其中，所述多个第一肋条和所述多个第二肋条相互交叉以形成多个开口区，其中，所述掩模板遮片包括用于蒸镀基板上的第一曝光区的第一区域和用于蒸镀基板上的第二曝光区的第二区域，在所述第一区域和第二区域的分界处设置第三肋条，所述第三肋条用于遮挡基板上的第一曝光区和第二曝光区之间的重叠曝光区，所述第三肋条包括第一子肋条和第二子肋条以及将第一子肋条和第二子肋条间隔开的间隔部，所述第三肋条的宽度大于所述第一肋条的宽度。

Description

掩模板遮片和掩模板设备 技术领域
本公开涉及显示技术领域及掩模板技术领域，尤其涉及一种掩模板遮片和掩模板设备。
背景技术
随着显示技术的进步，有机发光二极管(Organic Light Emitting Diode，OLED)显示装置是当今平板显示装置研究领域的热点之一。而在有机发光二极管显示装置的制作过程中往往需要利用掩模板来蒸镀以形成各种图案膜层，例如利用掩模板来蒸镀有机发光层。
窄边框、异形显示是柔性显示时代的迫切需求，随之而来的是掩膜版在精度、异形遮挡、张网上的诸多问题。用于蒸镀的掩模板组件通常由掩模板框架、掩模板遮片、掩模板(例如高精度金属掩模板(FMM))等组装而成，在掩模板遮片的制作过程中，其先在外力作用下张开以减小下垂量，然后例如通过焊接等方式固定在掩模板框架上。FMM将发光材料以蒸镀的方式沉积在玻璃基板对应的位置，不需要发光的区域，则可以由掩模板遮片来遮挡。
公开内容
本公开的实施例提供一种用于在基板上蒸镀的掩模板遮片，包括：
沿着第一方向延伸的多个第一肋条；和
沿着第二方向延伸的多个第二肋条，所述第二方向与所述第一方向相交；
其中，所述多个第一肋条和所述多个第二肋条相互交叉以形成多个开口区，其中，所述掩模板遮片包括用于蒸镀基板上的第一曝光区的第一区域和用于蒸镀基板上的第二曝光区的第二区域，在所述第一区域和第二区域的分界处设置第三肋条，所述第三肋条用于遮挡基板上的第一曝光区和第二曝光区之间的重叠曝光区，所述第三肋条包括第一子肋条和第二子肋条以及将第一子肋条和第二子肋条间隔开的间隔部，所述第三肋条的宽度大于所述第一肋条的宽度。
在一些实施例中，所述第一区域和第二区域的边界沿着第一方向延伸，第一 子肋条和第二子肋条与第一肋条平行地延伸。
在一些实施例中，所述间隔部与第一子肋条和第二子肋条沿着所述第一方向平行地延伸。
在一些实施例中，所述间隔部包括至少一个通孔，所述通孔沿着与所述第三肋条相邻的开口区的与第三肋条相邻的边延伸，所述通孔在所述第一方向上的长度小于或等于所述与所述第三肋条相邻的开口区的与第三肋条相邻的边的长度。在一些实施例中，所述掩模板遮片还包括用于遮挡所述通孔的遮挡件，所述遮挡件位于所述第三肋条的背离所述基板的一侧，所述遮挡件在垂直于所述掩模板遮片的方向上在第三肋条上的正投影覆盖所述第三肋条的所述通孔。
在一些实施例中，所述遮挡件由非磁性材料构成。
在一些实施例中，所述间隔部包括至少一个槽，所述槽沿着与所述第三肋条相邻的开口区的与第三肋条相邻的边延伸，所述槽在所述第一方向上的长度小于或等于所述与所述第三肋条相邻的开口区的与第三肋条相邻的边的长度。
在一些实施例中，所述槽的深度为第一子肋条深度的0.5至0.8倍。
在一些实施例中，第一子肋条的宽度为与第一子肋条和第二子肋条平行的第一肋条的宽度的1至1.2倍；和/或
第二子肋条的宽度为与第一子肋条和第二子肋条平行的第一肋条的宽度的1至1.2倍。
在一些实施例中，所述第一肋条与所述第二肋条相互垂直并形成一体。
在一些实施例中，所述掩模板遮片还包括第四肋条，所述第四肋条位于所述掩模板遮片的边缘部且与所述第一肋条或第二肋条平行。
在一些实施例中，所述第四肋条的宽度为与第四肋条平行的第一肋条或第二肋条的宽度的1至1.2倍。
本公开的实施例还提供了一种掩模板设备，包括：
根据上述任一实施例所述的掩模板遮片；以及
至少一个掩模板，所述至少一个掩模板设置于所述掩模板遮片的朝向基板的一侧，配置成覆盖掩模板遮片的多个开口区。
在一些实施例中，所述掩模板设备还包括：
掩模板框架，所述掩模板框架配置成支撑固定所述掩模板遮片和所述掩模板；以及
磁性板，所述磁性板位于基板的与所述掩模板遮片相反的一侧，
其中，所述掩模板遮片和所述掩模板包括磁性材料，所述磁性板配置成通过磁力将掩模板和掩模板遮片朝向所述基板吸引。
在一些实施例中，所述的掩模板设备还包括：对准掩模，所述对准掩模与所述掩模板框架连接，与所述掩模板并排布置，用于为所述掩模板提供对准基准，其中，所述掩模板遮片还包括第四肋条，所述第四肋条位于所述掩模板遮片的边缘部且与所述第一肋条或第二肋条平行，所述第四肋条在垂直于所述掩模板遮片的方向上的正投影与所述对准掩模在垂直于所述掩模板遮片的方向上的正投影交叠。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本公开的其它特征、目的和优点将会变得更明显：
图1示出了一种利用掩模板组件在基板上蒸镀发光材料的示意图；
图2示意性地示出了FMM从基板上翘起对于阴影区的影响；
图3示意性地示出了掩模板遮片与FMM在平面图中的相互位置关系；
图4示出了膜层结构的多个曝光区域的示意图；
图5示出了适应于多个曝光区域的掩膜板遮片的一种示例；
图6A示意性示出了掩模板遮片中对应于曝光区域的交叠区域处的肋条与普通区域中的肋条的对比；
图6B示意性示出了掩模板遮片中靠近掩模板框架短边处的肋条与普通区域中的肋条的对比；
图7中示出了FMM与基板的一种示例性的贴合状态；
图8示出了根据本公开的实施例的一种掩模板遮片的第三肋条的示意图；
图9示出了根据本公开的实施例的一种掩模板遮片的第四肋条的示意图；
图10示出如图8所示的掩模板遮片将掩模板夹持在基板上的示意图；
图11示出了根据本公开的另一些实施例的一种掩模板遮片的第三肋条的示意图；
图12示出如图11所示的掩模板遮片将掩模板夹持在基板上的示意图；
图13示出了根据本公开的实施例的掩模板框架的结构示意图；以及
图14示出了根据本公开的实施例的掩模板遮片的示意性平面图。
具体实施方式
下面结合附图和实施例对本公开作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释相关发明，而非对该发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与发明相关的部分。
需要说明的是，在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互组合。
另外，在下面的详细描述中，为便于解释，阐述了许多具体的细节以提供对本披露实施例的全面理解。然而明显地，一个或多个实施例在没有这些具体细节的情况下也可以被实施。
应该理解的是，尽管在这里可使用术语第一、第二等来描述不同的元件，但是这些元件不应受这些术语的限制。这些术语仅是用来将一个元件与另一个元件区分开来。例如，在不脱离示例实施例的范围的情况下，第一元件可以被命名为第二元件，类似地，第二元件可以被命名为第一元件。如在这里使用的术语“和/或”包括一个或多个相关所列的项目的任意组合和所有组合。
应该理解的是，当元件或层被称作“形成在”另一元件或层“上”时，该元件或层可以直接地或间接地形成在另一元件或层上。也就是，例如，可以存在中间元件或中间层。相反，当元件或层被称作“直接形成在”另一元件或层“上”时，不存在中间元件或中间层。应当以类似的方式来解释其它用于描述元件或层之间的关系的词语(例如，“在…之间”与“直接在…之间”、“相邻的”与“直接相邻的”等)。
本文中使用的术语仅是为了描述特定实施例的目的，而不意图限制实施例。如本文中所使用的，除非上下文另外明确指出，否则单数形式也意图包括复数形式。还将理解的是，当在此使用术语“包含”和/或“包括”时，说明存在所述特征、整体、步骤、操作、元件和/或组件，但不排除存在或附加一个或多个其它特征、整体、步骤、操作、元件、组件和/或它们的组合。
在本文中，如无特别说明，表述“位于同一层”、“同层设置”一般表示的是：第一部件和第二部件可以使用相同的材料并且可以通过同一构图工艺形成。表述“位于不同层”、“不同层设置”一般表示的是：第一部件和第二部件通过不同构图工艺形成。
有机发光二极管(OLED)显示面板中的有机发光层是膜层结构中用于实现发光所必不可少的结构。在显示面板工作时，通过控制施加在阳极和阴极上的电压可以激发有机发光层发光。有机发光层例如可以通过蒸镀来制作。在蒸镀有机发光层的过程中需要借助于掩模板(或称高精度金属掩模板(FMM))组件来实现。
蒸镀是当前制作显示面板上的诸如发光材料等膜层的主要工艺之一。图1给出了利用掩模板组件来进行蒸镀的原理性示意图。图1中示出了蒸发源10，该蒸发源将材料101向位于蒸发源10上方的基板20(例如玻璃基板)蒸发。在基板20的下表面上附有掩模板30(例如高精度金属掩模板(FMM))，掩模板30上可以具有一些图案，来自蒸发源10的材料(例如发光材料)在经过掩模板30之后，可以沉积在基板20上，以形成显示面板的显示区上的图案。掩模板遮片100用于将掩模板30支撑和固定在基板20的下表面上。具体地，掩模板遮片100可以由金属材料制成，可以通过设置在基板20上方的磁性板40吸引位于基板20下方的掩模板遮片100，从而将掩模板30固持于基板20的下表面。另外，掩模板遮片100还可以遮挡基板上的不期望沉积蒸镀材料的非发光区域。作为示例，掩模板遮片100可以做成整体，其与掩模板30的相对位置关系在图3中示出。在图3中可以清楚地看出，掩模板遮片100主要由沿着第一方向(例如x方向)延伸的多条第一肋条11和沿着第二方向(例如y方向)延伸的多条第二肋条12构成。
理想地，掩模板30应当与基板20的下表面紧贴，但是实际中由于各种原因，掩模板30的局部可能产生翘曲，使得掩模板30与基板20的下表面之间存在明显的间隙。这种间隙可能使掩模板30在基板20上产生阴影区(shadow)。如图2所示，假定掩模板30与基板20的下表面紧贴(参见图2中的左边)，则材料通过掩模板30在基板20上形成的图案的边界是是清晰的，如左边的竖直的虚线所示；而当掩模板30’偏斜而导致掩模板30’与基板20的下表面之间产生间隙，由于掩模板30’与基板20的下表面之间的上述间隙的存在，材料通过掩模板30’在基板20上形成的图案的边界不再清晰，而是存在内阴影区和外阴影区(参见图2中的右边)。而且随着该间隙的增大，阴影区的范围也会变大，这将引起缺陷。
对于显示面板而言，基板20上的膜层结构(例如薄膜晶体管等)需要通过曝光-蚀刻工艺来完成。由于受到工艺和设备的限制，一张基板20上的膜层结 构可能需要多次分区域曝光来实现，也就是说，每次只对基板20上的一部分区域进行曝光，而通过多次曝光来实现对整个基板20的曝光。我们可以将基板20针对于不同次的曝光来分成不同的曝光区域，例如基板20上被第一次曝光的区域可称为第一曝光区21，被第二次曝光的区域可称为第二曝光区22，如果还有被第三次曝光的区域，可称为第三曝光区23，如图4所示。
发明人已经发现，在实际蒸镀过程中，在基板20上的相邻的曝光区之间的交界处容易存在蒸镀缺陷。在基板20上的相邻的曝光区之间(例如图4中的第一曝光区21和第二曝光区22的交界处和第二曝光区22和第三曝光区23的交界处)，会设置有一段过渡区，这段过渡区在两次曝光中都会被曝光，因此也可以称为重叠曝光区。例如在图4的示例中，示出了位于第一曝光区21和第二曝光区22之间的第一重叠曝光区24和位于第二曝光区22和第三曝光区23之间的第二重叠曝光区25。重叠曝光区的存在可以防止有效的膜层图案边缘被过度曝光，但也使得在相邻曝光区之间的边界处存在额外的边缘区域。相应地，掩模板遮片100在对应于该区域的位置处的肋条宽度要更大，从而更好地覆盖这样的边缘区域。在图5中示出了掩模板遮片100的一种示例。在该示例中，掩模板遮片100在对应于相邻曝光区之间的边界的位置处的肋条宽度比在对应于在曝光区中的通常区域的位置处的肋条宽度更宽。
在图6A中可以更清楚地观察到掩模板遮片100的这种肋条宽度的差异。掩模板遮片100在对应于相邻曝光区之间的边界的位置处的肋条宽度由A表示，而在对应于在曝光区中的通常区域的位置处的肋条宽度由B表示。发明人已经发现正是这种肋条宽度的差异导致了蒸镀的潜在缺陷。以下结合图7对此进行说明。
为了方便描述，在此，称掩模板遮片100的上述较宽的肋条称为宽肋条17，而将较窄的肋条称为窄肋条18。正是由于这种肋条宽度的差异，导致了掩模板遮片100将掩模板30固持于基板20的下表面上时会在宽肋条17附近产生掩模板30与基板20之间的较大的间隙，从而引起蒸镀缺陷。以下推导是基于磁性板40从基板20的远离掩模板遮片100的一侧上通过磁力吸引掩模板遮片100来实现掩模板30的固持的方案来进行的。
在均匀磁场中，掩模板30上的某一区域受到的磁性板40的磁力的计算公式可以简化为：
Figure PCTCN2020139360-appb-000001
其中，μ表示真空磁导率(常数)，B 0表示该区域的磁感应强度，S表示磁场与导磁体的接触面积。假设掩模板30上的区域1(宽肋条所在区域)的面积为S 1，区域2(窄肋条所在区域)的面积为S 2，且区域1的面积S 1和区域2的面积S 2关系有：S 1＝kS 2(k为大于1的系数)，则可以得出区域1受到的重力G 1和区域2受到的重力G 2存在关系G 1＝kG 2。而且，区域1通常比区域2更远离中心，因此，在重力作用下，区域2的垂度比区域1大，也就是说，区域1比区域2更靠近基板20的下表面。而且，区域1的磁感应强度B 01与区域2的磁感应强度B 02满足关系式B 01＞B 02，于是可以推出：区域1受到的磁力F 1与区域2受到的磁力F 2满足关系式F 1＞kF 2。掩模板30上的区域1和区域2均受到磁力和重力的合力，即：
F 1-G 1＞F 2-G 2   (式2)
掩模板30进入蒸镀腔室后，受磁力吸引而与基板贴合，可以得到区域1被吸引后的加速度a 1和区域2被吸引后的加速度a 2满足关系式：
a 1＞a 2   (式3)
由加速度a与位移D的关系式D＝v 0t+1/2at 2(其中v 0为初速度，t为时间)，D 1＜D 2，可以得出区域1被吸引后的移位时间t 1和区域2被吸引后的移位时间t 2满足关系式：
t 1＜t 2   (式4)
从以上推导可以得出，掩模板遮片100上的宽肋条17在磁力作用下会先与基板20贴合，而窄肋条18将后与基板20贴合。先贴合后，宽肋条14将掩模板30压在基板20的下表面上，阻碍了掩模板30受到磁力吸附后流动，不利于掩模板30的舒展，在掩模板30和基板20的下表面之间形成了间隙，进而在蒸镀后在宽肋条17附近引起阴影区的缺陷。
本公开的实施例提供了一种用于在基板20上进行蒸镀的掩模板遮片100’。 该掩模板遮片100’包括：沿着第一方向延伸的多个第一肋条11和沿着第二方向延伸的多个第二肋条12，所述第二方向与所述第一方向相交(例如第一方向为x方向，第二方向为y方向)。所述多个第一肋条11和所述多个第二肋条12相互交叉以形成多个开口区16。所述掩模板遮片100’包括第一区域110和第二区域120。第一区域110用于蒸镀基板20上的第一曝光区21，第二区域120用于蒸镀第二曝光区22。在所述第一区域110和第二区域120的分界处设置第三肋条13，所述第三肋条13用于遮挡基板20上的第一曝光区21和第二曝光区22之间的重叠曝光区24。所述第三肋条13包括第一子肋条131和第二子肋条以及将第一子肋条131和第二子肋条132间隔开的间隔部133。第三肋条13的宽度大于第一肋条的宽度。
在一些实施例中，掩模板遮片100’的第一区域110和第二区域120之间的边界沿着第一方向(如x方向)延伸。在此情况下，第三肋条13与第一肋条11均沿着第一方向延伸，彼此平行。同样地，第一子肋条131和第二子肋条132与间隔部133也沿着第一方向平行地延伸。
如图8所示，在该实施例中，在掩模板遮片100’上对应于基板20上的第一曝光区21的第一区域110和对应于基板20上的第二曝光区22的第二区域120的分界处没有采用前述示例中的宽肋条17的形式，而是采用了复合子肋条的形式的第三肋条13。从图8中可以看出，由于间隔部133的存在，第三肋条13的实体部分的宽度(如图8上的C所示)明显小于上述示例中的宽肋条17的宽度。图10示出了具有上述第三肋条13的掩模板遮片100’将掩模板30固定于基板20上的原理示意图。在这种情况下，第一子肋条131和第二子肋条132分别受到磁性板40的吸引，移动所需的时间相比于宽肋条17变长，从而使掩模板30在收到磁性板40吸引之后有足够的时间舒展，从而减小了掩模板30的翘曲和掩模板30与基板20之间的间隙。这有助于抑制上文所述的阴影区效应，改善上述蒸镀缺陷。
在一些实施例中，第一子肋条131的宽度为与第一子肋条131和第二子肋条132平行的第一肋条11的宽度的1至1.2倍。类似地，第二子肋条132的宽度也可以为与第一子肋条131和第二子肋条132平行的第一肋条11的宽度的1至1.2倍。这可以使得第一子肋条131和第二子肋条132与掩模板遮片100’的普通区域中的第一肋条11或第二肋条12的宽度尽可能接近。需要说明的是，第一肋条11 的宽度与第二肋条12的宽度也可以不同。然而本公开的实施例不限于此，第一子肋条131和第二子肋条132的宽度还可以为其他数值范围。
在图8和图10所示的示例中，间隔部133包括至少一个通孔136，该通孔例如可以为矩形孔、圆形孔或者其他形状的孔。图14给出了掩模板遮片100’的一个示意性的平面图。从图14中可以看出，通孔136可以沿着与所述第三肋条13相邻的开口区16的与第三肋条13相邻的边161延伸，所述通孔136在第一方向上的长度小于或等于所述与所述第三肋条13相邻的开口区16的与第三肋条13相邻的边161的长度。作为示例，所述通孔136在所述第一方向上的长度小于或等于所述与所述第三肋条13相邻的开口区16的与第三肋条13相邻的边161的长度。如图8和图14所示，第三肋条13可以与邻近的第一肋条11和第二肋条12一起围成开口区16。第三肋条13的所述通孔136的开设长度范围可以与该第三肋条13所界定的开口区16的边长相同或更短。为了避免对于掩模板遮片100’的强度的明显削弱，作为示例，在第三肋条13与其他肋条(例如第一肋条11或第二肋条12)的交叉部135处不设置上述通孔136。或者说，第三肋条13中的第一子肋条131和第二子肋条132的长度可以与其所界定的开口区16的边长相同或更短。在第三肋条13的间隔部133中设置通孔136的情况下，为了防止蒸镀材料穿过间隔部133到达基板20，还可以设置用于遮挡该间隔部133的遮挡件134(或可称为遮挡掩模)。该遮挡件134位于所述第三肋条13的背离所述掩模板30的一侧(或称位于所述第三肋条13的背离所述基板20的一侧)，所述遮挡件134在垂直于所述掩模板遮片100’的方向上在第三肋条13上的正投影覆盖所述第三肋条13的通孔136。在本公开的实施例中，各种肋条都可以是长条形状的。间隔部133(或者说通孔136)也可以具有长条形状。作为示例，遮挡件134也可以包括与第三肋条13上的通孔136相对应的长条形状。遮挡件134的宽度和长度例如都应当超过第三肋条13上的通孔136的宽度和长度，以实现对其完全覆盖。另外，遮挡件134的宽度可不超出第三肋条13的总宽度的范围，即不超出第一子肋条131和第二子肋条132的外部边缘。
在一些实施例中，遮挡件134可以被压紧固定在第三肋条13的背离基板20一侧的表面上。为了固定和保持遮挡件134，遮挡件134可以具有支撑端137。在一些实施例中，掩模板遮片100’可以固定在掩模板框架50上，在此情况下，在掩模板框架50上也可以设有用于容纳所述遮挡件134的支撑端137的容纳槽 138。该容纳槽138例如为下沉槽。遮挡件134的支撑端137可以被固定在掩模板框架50上的容纳槽138中，并保证遮挡件134与掩模板遮片100’一起张紧使遮挡件134贴靠在掩模板遮片100’的背离基板20一侧的表面上。
除去第三肋条13之外，如图9所示，掩模板遮片100’还可以包括第四肋条19，所述第四肋条19位于所述掩模板遮片100’的边缘部且与所述第一肋条11或第二肋条12平行。可以与之前图6A和图6B所示的示例进行对比。在图6B所示的示例中，掩模板遮片100在靠近掩模板框架50的位置处的边缘部也采用的是宽肋条17’。宽肋条17’与对准掩模60相交叠。这种宽肋条17’与上述说明的图6A所示的示例中的宽肋条17类似，也可能会造成掩模板30在宽肋条17附近位置处的翘曲和掩模板30与基板20之间的较大的间隙(参见图7)。在图6B中可以看出，宽肋条17’的宽度较大，已经覆盖了设置在对准掩模60上的蒸镀膜厚测试开孔61的范围，因此，在宽肋条17’上对应于对准掩模60上的蒸镀膜厚测试开孔61的位置处也需要相应地开孔。而在图9中所示的实施例中，第四肋条19的宽度(如图9中的E所示)相比于图6的示例中的宽肋条17’的宽度已经显著减小。例如，第四肋条19的宽度可以为与第四肋条平行的第一肋条11或第二肋条12的宽度的1至1.2倍。第四肋条19仍然保持与对准掩模60的交叠，或者说，第四肋条19在垂直于掩模板遮片100’的方向上的正投影与对准掩模60在垂直于掩模板遮片100’的方向上的正投影是相互交叠的。第四肋条19让开了蒸镀膜厚测试开孔61的位置，因此，该蒸镀膜厚测试开孔61只需要设置在对准掩模60中，而不需要设置在掩模板遮片100’中。
图11和图12给出了根据本公开的另一实施例的掩模板遮片100”。在该掩模板遮片100”中，与上述图8至图10所示的实施例的区别主要在于第三肋条13’的间隔部133’是盲孔形式(即，间隔部133’包括至少一个槽136’)，而不是通孔形式。从图12中可以清楚地看出，间隔部133’没有将第一子肋条131’和第二子肋条132’完全分隔开，第一子肋条131’和第二子肋条132’之间还具有将它们连接在一起的连接部139。在蒸镀操作中，槽136’例如可以朝向基板20开口。作为示例，该槽136’的深度可以为掩模板遮片100”的总厚度T(例如第一子肋条131’或第二子肋条132’的厚度)的0.5至0.8倍。该槽136’例如可以通过蚀刻来制作。这种设计也可以减小由于肋条的宽度差异导致的掩模板30的局部翘曲和掩模板30与基板20之间的较大的间隙。在该实施例中，由于连接部139的存在，蒸镀 材料不会穿过间隔部133’到达基板20，因此，该方案不需要上述遮挡件134，可以节省成本。在一些实施例中，所述槽136’可沿着与所述第三肋条13’相邻的开口区16的与第三肋条13’相邻的边161延伸，所述槽136’在所述第一方向(例如x方向)上的长度小于或等于所述与所述第三肋条13’相邻的开口区16的与第三肋条13’相邻的边161的长度。这与之前的间隔部包括通孔136的示例是类似的。根据本公开的前述实施例中的掩模板遮片100’中的其他结构可以与图11和图12所示出的掩模板遮片100”相组合，具体细节不再赘述。
在一些实施例中，第三肋条13的宽度可以为大于6毫米，第一肋条11的宽度可以为大于3毫米。掩模板遮片100’、100”的厚度例如可以为100微米至200微米。遮挡件134的厚度例如可以在30微米至60微米之间。在一些实施例中，遮挡件134可由非磁性材料构成，例如包括但不限于不锈钢、铝合金等等。这可以避免磁性板40吸引遮挡件134而导致掩模板遮片100’、100”被过快地吸引至基板20上以导致掩模板30的翘曲。而掩模板遮片100’、100”以及掩模板30均可包括磁性材料，以被磁性板40所吸引。
在本公开的实施例中，第一子肋条131和第二子肋条132可以与第一肋条11或第二肋条12平行地延伸。这有利于掩模板遮片100’、100”的开口区16形成规则的形状。在一些实施例中，第三肋条13、13’的间隔部133、133’与第一子肋条131、131’和第二子肋条132、132’平行地延伸。在一些实施例中，所述第一肋条11与所述第二肋条12可以相互垂直并形成一体。
本公开的实施例还提供了一种掩模板组件200。如图13所示，该掩模板组件200包括：如前任一实施例所述的掩模板遮片100’、100”；以及至少一个掩模板30，所述至少一个掩模板30设置于所述掩模板遮片100’、100”的一侧，配置成覆盖掩模板遮片100’、100”的多个开口区16。在蒸镀操作中，掩模板30被掩模板遮片100’、100”固持于基板20的表面上。需要说明的是，由于尺寸结构所限，在图13上并没有示出第三肋条13、13’以及第四肋条19，它们的具体结构可参见上述实施例。在一些实施例中，掩模板组件200还可以包括：掩模板框架50和对准掩模60。所述掩模板框架50配置成支撑固定所述掩模板遮片100’、100”，所述对准掩模60与所述掩模板框架50连接。
在图13所示的示例中，该掩模板组件200包括掩模板框架50以及固接在掩模板框架50上的多个掩模板30。这些掩模板30例如可以每个掩模板30可以成 条形形状，且可包括掩模图案区31和固接区32。掩模图案区31中可形成有用于蒸镀发光材料等膜层的蒸镀图案。固接区32位于掩模板30的两端，用于与掩模板框架50固接，例如通过焊接来与掩模板框架50固接。掩模板遮片100’、100”位于所述掩模板30的朝向掩模板框架50的一侧上。多个掩模板30可以并行地排布。掩模板框架50例如具有矩形形状，该掩模板框架50具有彼此相对的第一边框51和第二边框52以及彼此相对的第三边框53和第四边框54。掩模板30的两端的固接区32分别固定于掩模板框架50的第一边框51和第二边框52。对准掩模60也可以具有长条形状，在图13的示例中共设置有两块对准掩模60，可以与掩模板30并行地分别布设在掩模板30的靠近第三边框53和靠近第四边框54的位置上。在一些实施例中，两块对准掩模60在垂直于掩模板遮片100’、100”的方向上的正投影分别与掩模板框架50的第三边框53和第四边框54在垂直于掩模板遮片100’、100”的方向上的正投影相交叠。所述对准掩模60用于实现掩膜板30在张网情况下的对位操作。对准掩模60可以与掩模板30并排地布置。例如在图13所示的示例中，设置有两个对准掩模60。在将掩模板30固定到掩模板框架50上之前，可以先将对准掩模60张紧并固定于掩模板框架50上，对准掩模60上的对准标记可以在将掩模板30固定在掩模板框架50上时作为掩模板30相对于掩模板框架50的对位基准。
在一些实施例中，掩模板遮片100’、100”的第一肋条11可以沿着与掩模板的延伸方向平行的方向延伸，且可以用于遮挡相邻的掩模板30之间的缝隙。
在一些实施例中，掩模板遮片100’、100”的第四肋条19可位于所述掩模板遮片100’、100”的边缘部190且与第一肋条11或第二肋条12平行，所述第四肋条19可以与所述对准掩模60至少部分地重叠。
在一些实施例中，所述掩模板组件还可以包括用于遮挡掩模板遮片100’的间隔部133的遮挡件134，该遮挡件134位于所述第三肋条13的背离所述掩模板30的一侧，所述遮挡件134在垂直于所述掩模板遮片100’、100”的方向上在第三肋条13上的正投影覆盖所述第三肋条13的间隔部133。作为示例，所述掩模板框架50还可以设有用于容纳所述遮挡件134的支撑端137的容纳槽138。遮挡件134例如可以通过将支撑端137固接至掩模板框架50的容纳槽138来连接至掩模板框架50。
本公开的实施例还提供了一种掩模板设备。该掩模板设备可以包括：如上任 一实施例所述的掩模板遮片100’、100”；以及至少一个掩模板30，所述至少一个掩模板设置于所述掩模板遮片100’、100”的朝向基板20的一侧，配置成覆盖掩模板遮片100’、100”的多个开口区16。
在一些实施例中，所述掩模板设备还可以包括：掩模板框架50，所述掩模板框架50配置成支撑固定所述掩模板遮片100’、100”和所述掩模板30；以及磁性板40，所述磁性板40位于基板20的与所述掩模板遮片100’、100”相反的一侧。所述掩模板遮片100’、100”和所述掩模板30包括磁性材料，所述磁性板40配置成通过磁力将掩模板30和掩模板遮片100’、100”朝向所述基板20吸引。
在一些实施例中，所述掩模板设备还可以包括：对准掩模60，所述对准掩模60与所述掩模板框架50连接，与所述掩模板30并排布置，用于为所述掩模板30提供对准基准。所述掩模板遮片100’、100”还包括第四肋条19，所述第四肋条19位于所述掩模板遮片100’、100”的边缘部190且与所述第一肋条11或第二肋条12平行，所述第四肋条19在垂直于所述掩模板遮片100’、100”的方向上的正投影与所述对准掩模60在垂直于所述掩模板遮片100’、100”的方向上的正投影交叠。
另外，需要说明的是，在根据本公开的实施例的掩模板遮片100’、100”中，开口区16对应于显示面板单元，而在掩模板30落入每个开口区16的部分中可以设置有图案，例如用于形成各个像素单元的膜层。在图14所示的示例中，开口区16为矩形形状，且该矩形的短边布置成与第三肋条13的延伸方向一致。然而，这仅仅是示意性的，例如开口区16也可以布设成使该矩形的长边布置成与第三肋条13的延伸方向一致。
以上描述仅为本公开的较佳实施例以及对所运用技术原理的说明。本领域技术人员应当理解，本公开中所涉及的发明范围，并不限于上述技术特征的特定组合而成的技术方案，同时也应涵盖在不脱离所述发明构思的情况下，由上述技术特征或其等同特征进行任意组合而形成的其它技术方案。例如上述特征与本公开中公开的(但不限于)具有类似功能的技术特征进行互相替换而形成的技术方案。

Claims (14)

  1. 一种用于在基板上蒸镀的掩模板遮片，包括：
    沿着第一方向延伸的多个第一肋条；和
    沿着第二方向延伸的多个第二肋条，所述第二方向与所述第一方向相交；
    其中，所述多个第一肋条和所述多个第二肋条相互交叉以形成多个开口区，其中，所述掩模板遮片包括用于蒸镀基板上的第一曝光区的第一区域和用于蒸镀基板上的第二曝光区的第二区域，在所述第一区域和第二区域的分界处设置第三肋条，所述第三肋条用于遮挡基板上的第一曝光区和第二曝光区之间的重叠曝光区，所述第三肋条包括第一子肋条和第二子肋条以及将第一子肋条和第二子肋条间隔开的间隔部，所述第三肋条的宽度大于所述第一肋条的宽度。
  2. 根据权利要求1所述的掩模板遮片，其中，所述第一区域和第二区域的边界沿着第一方向延伸，第一子肋条和第二子肋条与第一肋条平行地延伸。
  3. 根据权利要求1或2所述的掩模板遮片，其中，所述间隔部与第一子肋条和第二子肋条沿着所述第一方向平行地延伸。
  4. 根据权利要求3所述的掩模板遮片，其中，所述间隔部包括至少一个通孔，所述通孔沿着与所述第三肋条相邻的开口区的与第三肋条相邻的边延伸，所述通孔在所述第一方向上的长度小于或等于所述与所述第三肋条相邻的开口区的与第三肋条相邻的边的长度。5.根据权利要求4所述的掩模板遮片，还包括用于遮挡所述通孔的遮挡件，所述遮挡件位于所述第三肋条的背离所述基板的一侧，所述遮挡件在垂直于所述掩模板遮片的方向上在第三肋条上的正投影覆盖所述第三肋条的所述通孔。
  5. 根据权利要求4所述的掩模板遮片，其中，所述遮挡件由非磁性材料构成。
  6. 根据权利要求3所述的掩模板遮片，其中，所述间隔部包括至少一个槽，所述槽沿着与所述第三肋条相邻的开口区的与第三肋条相邻的边延伸，所述槽在所述第一方向上的长度小于或等于所述与所述第三肋条相邻的开口区的与第三肋条相邻的边的长度。
  7. 根据权利要求7所述的掩模板遮片，其中，所述槽的深度为第一子肋条深度的0.5至0.8倍。
  8. 根据权利要求1至3中任一项所述的掩模板遮片，其中，第一子肋条的宽度为与第一子肋条和第二子肋条平行的第一肋条的宽度的1至1.2倍；和/或
    第二子肋条的宽度为与第一子肋条和第二子肋条平行的第一肋条的宽度的1至1.2倍。
  9. 根据权利要求1至3中任一项所述的掩模板遮片，其中，所述第一肋条与所述第二肋条相互垂直并形成一体。
  10. 根据权利要求1至3中任一项所述的掩模板遮片，其中，所述掩模板遮片还包括第四肋条，所述第四肋条位于所述掩模板遮片的边缘部且与所述第一肋条或第二肋条平行。
  11. 根据权利要求10所述的掩模板遮片，其中，所述第四肋条的宽度为与第四肋条平行的第一肋条或第二肋条的宽度的1至1.2倍。
  12. 一种掩模板设备，包括：
    根据权利要求1至10中任一项所述的掩模板遮片；以及
    至少一个掩模板，所述至少一个掩模板设置于所述掩模板遮片的朝向基板的一侧，配置成覆盖掩模板遮片的多个开口区。
  13. 根据权利要求13所述的掩模板设备，还包括：
    掩模板框架，所述掩模板框架配置成支撑固定所述掩模板遮片和所述掩模板；以及
    磁性板，所述磁性板位于基板的与所述掩模板遮片相反的一侧，
    其中，所述掩模板遮片和所述掩模板包括磁性材料，所述磁性板配置成通过磁力将掩模板和掩模板遮片朝向所述基板吸引。
  14. 根据权利要求13或14所述的掩模板设备，还包括：对准掩模，所述对准掩模与所述掩模板框架连接，与所述掩模板并排布置，用于为所述掩模板提供对准基准，其中，所述掩模板遮片还包括第四肋条，所述第四肋条位于所述掩模板遮片的边缘部且与所述第一肋条或第二肋条平行，所述第四肋条在垂直于所述掩模板遮片的方向上的正投影与所述对准掩模在垂直于所述掩模板遮片的方向上的正投影交叠。
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109778116B (zh) * 2019-03-28 2021-03-02 京东方科技集团股份有限公司 一种掩膜版及其制作方法、掩膜版组件
CN116254503B (zh) * 2023-03-21 2024-05-07 京东方科技集团股份有限公司 一种金属屏蔽片掩膜板和蒸镀辅助设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN206266701U (zh) * 2016-11-25 2017-06-20 信利（惠州）智能显示有限公司 掩膜板组件
CN111088474A (zh) * 2020-01-03 2020-05-01 京东方科技集团股份有限公司 一种掩膜板及其制作方法
CN111733380A (zh) * 2020-06-28 2020-10-02 武汉华星光电半导体显示技术有限公司 一种掩膜版组件、张网方法及蒸镀装置
CN111850467A (zh) * 2020-08-04 2020-10-30 京东方科技集团股份有限公司 一种金属掩膜板组件、oled显示面板及显示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095324A (ja) * 2005-09-27 2007-04-12 Hitachi Displays Ltd 有機ｅｌ表示パネルの製造方法、及びこの製造方法により製造した有機ｅｌ表示パネル
KR20100026655A (ko) * 2008-09-01 2010-03-10 삼성모바일디스플레이주식회사 박막 증착용 마스크 및 이를 이용한 유기전계발광 소자의 제조방법
KR101742816B1 (ko) * 2010-12-20 2017-06-02 삼성디스플레이 주식회사 마스크 프레임 조립체, 이의 제조 방법 및 이를 이용한 유기 발광 표시 장치의 제조 방법
KR102002494B1 (ko) * 2012-11-30 2019-07-23 삼성디스플레이 주식회사 박막 증착용 마스크 프레임 어셈블리
KR102404576B1 (ko) * 2015-04-24 2022-06-03 삼성디스플레이 주식회사 마스크 프레임 조립체, 그 제조 방법 및 표시 장치의 제조 방법
CN105839052A (zh) * 2016-06-17 2016-08-10 京东方科技集团股份有限公司 掩膜板以及掩膜板的组装方法
CN106086782B (zh) * 2016-06-28 2018-10-23 京东方科技集团股份有限公司 一种掩膜版组件及其安装方法、蒸镀装置
KR102544244B1 (ko) * 2016-07-19 2023-06-19 삼성디스플레이 주식회사 마스크 프레임 조립체
CN106884140B (zh) * 2017-04-28 2019-04-30 京东方科技集团股份有限公司 一种掩膜组件及其组装方法
WO2019064418A1 (ja) * 2017-09-28 2019-04-04 シャープ株式会社 蒸着マスク及び蒸着マスクの製造方法
CN108441814B (zh) * 2018-03-22 2020-03-13 京东方科技集团股份有限公司 掩膜装置及其制作方法、蒸镀系统
JP7406719B2 (ja) * 2019-01-29 2023-12-28 大日本印刷株式会社 蒸着マスク及びその製造方法、蒸着マスク装置及びその製造方法、中間体、蒸着方法、並びに有機ｅｌ表示装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN206266701U (zh) * 2016-11-25 2017-06-20 信利（惠州）智能显示有限公司 掩膜板组件
CN111088474A (zh) * 2020-01-03 2020-05-01 京东方科技集团股份有限公司 一种掩膜板及其制作方法
CN111733380A (zh) * 2020-06-28 2020-10-02 武汉华星光电半导体显示技术有限公司 一种掩膜版组件、张网方法及蒸镀装置
CN111850467A (zh) * 2020-08-04 2020-10-30 京东方科技集团股份有限公司 一种金属掩膜板组件、oled显示面板及显示装置

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