WO2018000977A1 - 掩膜版组件及其安装方法、蒸镀装置 - Google Patents

掩膜版组件及其安装方法、蒸镀装置 Download PDF

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Publication number
WO2018000977A1
WO2018000977A1 PCT/CN2017/084733 CN2017084733W WO2018000977A1 WO 2018000977 A1 WO2018000977 A1 WO 2018000977A1 CN 2017084733 W CN2017084733 W CN 2017084733W WO 2018000977 A1 WO2018000977 A1 WO 2018000977A1
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WO
WIPO (PCT)
Prior art keywords
mask
support frame
support
strip
reticle
Prior art date
Application number
PCT/CN2017/084733
Other languages
English (en)
French (fr)
Inventor
林治明
王震
张健
唐富强
黄俊杰
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/744,952 priority Critical patent/US10787730B2/en
Publication of WO2018000977A1 publication Critical patent/WO2018000977A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005—Masking devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
    • B05D1/322—Removable films used as masks
    • B05D1/327—Masking layer made of washable film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present application relates to the field of display technologies, and in particular, to a mask assembly, a mounting method thereof, and a vapor deposition device.
  • OLED Organic Light Emitting Diode
  • the OLED display device includes a cathode layer, an organic material functional layer, an anode layer, and the like.
  • the organic material functional layer generally uses a mask to evaporate the evaporation material to a preset position of the vapor deposition back sheet.
  • An embodiment of the present application provides a mask assembly, including a support frame and a mask plate fixed on the support frame; the mask plate includes an effective mask area and an invalidity surrounding the effective mask area Mask area.
  • the mask assembly further includes a first support strip fixed to the support frame, the first support strip being disposed on a side of the mask facing away from the support frame, and the first support strip a projection on a plane of the support frame and a projection of the mask on a plane of the support frame, wherein the first overlap portion is located in the invalid mask region at the support frame Within the projection area of the plane.
  • the mask assembly further includes a second support strip fixed to the support frame, the second support strip being disposed on a side of the mask plate adjacent to the support frame, and a projection of the second support strip on a plane of the support frame and a projection of the mask on a plane of the support frame, a second overlapping portion, wherein the second overlapping portion is located in the invalid mask area The projection area of the plane where the support frame is located.
  • the first support strip and the second support strip extend in the same direction and have overlapping regions.
  • the first support strip completely coincides with the central axis of the second support strip and/or has an equal width.
  • the first support strip is in the shape of a straight line or a bent shape.
  • the second support strip is in the shape of a straight line or a bent shape.
  • the first support strip, the second support strip, and the reticle are made of the same material.
  • the reticle is provided with a groove on a side facing away from the support frame, and at least a portion of the first support bar is located within the groove.
  • the surface of the first support strip facing away from the support frame and the surface of the mask facing away from the support frame have a height difference, the absolute value of the height difference being less than or equal to 5 ⁇ m.
  • the first support strip faces away from the surface of the support frame and the mask is flush with the surface of the support frame, or the magnetic difference is reduced by a magnetically adsorbed reticle.
  • the depth of the groove is 40% to 60% of the thickness of the mask mask area.
  • the mask assembly when the mask assembly includes at least two masks, a side of the adjacent two of the masks and adjacent to the support frame is disposed to be fixed to the support A cover strip on the shelf.
  • the mask strip is disposed on a side of the second support strip adjacent the support frame.
  • the support frame is a rectangular frame; two ends of the mask are respectively fixed on the first pair of opposite sides of the support frame, and the mask plate and the second group of the support frame a gap region between at least one of the sides; the reticle assembly further comprising a aligning plate disposed on the gap region and fixed to the first pair of opposite sides of the support frame; Two ends of the support bar are respectively fixed on the opposite sides of the second set of the support frame.
  • the backing plate and the alignment plate are provided with alignment marks.
  • each of the reticle includes at least one active mask region.
  • the active mask region of the reticle includes a plurality of spaced apart occlusion strips.
  • the reticle is a stencil of a small aperture, an elongated reticle, or any combination thereof.
  • the mask is a fine metal mask.
  • Another aspect of an embodiment of the present application further provides a method of installing a mask assembly, the mask assembly comprising a support frame, a mask plate, and a first support strip; the method comprising: the mask version Fixed on the first pair of opposite sides of the support frame; on the support frame to which the mask plate is fixed, the first support bar is fixed on the second pair of opposite sides of the support frame and is set Located on a side of the mask that faces away from the support frame.
  • the method includes the steps of: securing the mask strip to the support a first pair of opposite sides of the frame; on the support frame to which the shielding strip is fixed, the second support strip is fixed to the second pair of opposite sides of the support frame; and the second support is fixed Fixing the mask on the first pair of opposite sides of the support frame; wherein a gap between two adjacent masks corresponds to a position of the mask strip
  • the second support strip is located on the invalid mask area of the mask; on the support frame to which the mask is fixed, the first support strip is fixed to the second set of opposite sides of the support frame And the first support strip is located in the recess of the mask.
  • the method further includes the steps of:
  • the alignment plate While fixing the mask on the first pair of opposite sides of the support frame, the alignment plate is fixed to the support at the alignment area between the mask and at least one side of the second pair of opposite sides of the support frame
  • the first set of shelves is on the opposite side.
  • Yet another aspect of an embodiment of the present application is to provide an evaporation apparatus including an evaporation source and the above-described mask assembly; wherein the support frame in the mask assembly is disposed closer to the mask The evaporation source is described.
  • Figure 1a is a schematic view showing the structure of the back sheet and the mask plate when they are attached;
  • Figure 1b is a schematic structural view of a mask
  • FIG. 2a is a schematic structural diagram of a mask module according to an embodiment of the present application.
  • Figure 2b is a cross-sectional view taken along line O-O' in Figure 2a;
  • 2c is a schematic structural diagram of a mask according to an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of another mask provided by an embodiment of the present application.
  • 2 e is a schematic structural diagram of another mask module according to an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a mask assembly including a second support strip according to an embodiment of the present application
  • Figure 3b is a cross-sectional view taken along line P-P' in Figure 3a;
  • Figure 4a is a partial enlarged view of the area A of Figure 3b in one example
  • Figure 4b is a partial enlarged view of the area A in Figure 3b in another example
  • Figure 4c is a partial enlarged view of the area A of Figure 3b in still another example
  • FIG. 5 is a schematic structural view of a backing plate and a mask plate according to an embodiment of the present application
  • FIG. 5b is a schematic structural view of another backing plate and a mask plate according to an embodiment of the present application.
  • FIG. 6 is a schematic structural view of another backing plate and a mask plate according to an embodiment of the present application.
  • FIG. 6b is a schematic structural diagram of another backing plate and a mask plate according to an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a mask assembly including a mask strip according to an embodiment of the present application.
  • Figure 7b is a cross-sectional view taken along line S-S' in Figure 7a;
  • FIG. 8 is a schematic structural diagram of a mask plate assembly including a registration plate according to an embodiment of the present application.
  • Figure 8b is a cross-sectional view taken along line G-G' in Figure 8a;
  • FIG. 9 is a flowchart of a method for installing a mask module according to an embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of an evaporation device according to an embodiment of the present application.
  • the vapor deposition back sheet 100 in order to accurately evaporate the vapor deposition material to a predetermined position of the vapor deposition back sheet 100 during the vapor deposition process, it is necessary to perform the vapor deposition back sheet 100 and the lower mask 200. fit.
  • the vapor deposition back sheet 100 when the vapor deposition back sheet 100 is bonded to the mask 200, the vapor deposition back sheet 100 has a larger gravity than the mask 200, and the vapor deposition back sheet 100 itself has a large gravity.
  • the amount of sag of the back sheet 100 in the direction F near the mask 200 is larger than the amount of sag of the mask 200 in this direction.
  • the active mask region 201 on the mask 200 described above includes a plurality of spaced apart mask strips 2011.
  • the amount of sag of the vapor deposition back sheet 100 is larger than the amount of sag of the mask 200, when the vapor deposition back sheet 100 is bonded to the mask 200, the mask 200 and the occlusion strip 2011 will be An offset occurs, thereby making The vapor deposition material cannot be effectively vapor-deposited to a predetermined position on the vapor deposition back sheet 100, thereby lowering the yield of the product.
  • the embodiment of the present application provides a mask assembly.
  • the mask assembly 10 includes a support frame 300 and a mask 200 fixed on the support frame 300.
  • the mask is included in FIG. 2a.
  • the version is explained as an example.
  • the reticle 200 includes an active mask region 201 and an ineffective mask region 202 surrounding the active mask region 201.
  • the mask assembly 10 further includes a first support strip 301 fixed to the support frame 300, and the first support strip 301 is disposed on a side of the mask 200 facing away from the support frame 300, and
  • the projection of the first support bar 301 on the plane of the support frame 300 and the projection of the mask 200 on the plane of the support frame 300 have a first overlapping portion, and the first overlapping portion is located in the invalid mask region 202 at the support frame 300.
  • the first support strip 301 is disposed on the ineffective mask region 202 to prevent the first support strip 301 from affecting the effective mask region 201 during the evaporation process.
  • the effective mask region 201 of the mask 200 means that the vapor deposition material can pass through the region and is evaporated onto the vapor deposition back sheet 100 located above the mask 200; the ineffective mask region 202 is used to block the vapor deposition material so that the vapor deposition material cannot be vapor-deposited through the region to the vapor deposition back sheet 100 (hereinafter simply referred to as the back sheet 100).
  • At least one, for example, a plurality of active mask regions 201 may be disposed on a single mask 200.
  • 9 effective mask regions 201 in the form of a 3 ⁇ 3 matrix are provided, or 2a is provided with three active mask regions 201 in the form of a column.
  • the application does not limit the number and arrangement of the effective mask regions 201, and can be selected according to production requirements in an actual production process.
  • the mask 200 may also be a Slot Type Mask as shown in FIG. 2c or a long slit mask as shown in FIG. 2d (Slit Type Mask). ).
  • a long mask as shown in Fig. 2a, FME (Fine Metal Mask)
  • the width of the shielding strip 2011 in the effective mask region 201 is only about several tens of micrometers, and the compressive strength thereof is small, but the first supporting strip 301 can effectively support the backing plate 100.
  • the first support bar 301 located on the ineffective mask region 202 may have a linear shape as shown in FIG. 2a or a bent shape as shown in FIG. 2e.
  • the intermediate portion of the back sheet 100 has the largest amount of sag generated in the direction F near the mask 200, the reticle 200 receives the maximum pressing force corresponding to the intermediate portion of the back sheet 100. Therefore, in one example, as shown in FIG. 2a, a first support bar 301 will be disposed in the intermediate portion of the reticle 200, and the first support bar 301 has a linear shape and can be satisfied. While the intermediate portion of the back sheet 100 is provided with a supporting force, the material of the first support bar 301 is minimized.
  • the following embodiments are all based on the first support bar 301 shown in FIG. 2a, and the present application is further explained.
  • the reticle assembly includes a support frame and a mask plate fixed on the support frame, the mask plate includes an effective mask region and an invalid mask region surrounding the effective mask region.
  • the mask assembly further includes a first support strip fixed to the support frame, the first support strip being disposed on a side of the mask facing away from the support frame and located on the ineffective mask area.
  • the vapor deposition back sheet is usually located above the mask so that the material evaporated by the evaporation source can be vapor-deposited through the mask to the vapor deposition back sheet, and vapor-deposited.
  • the amount of sag in the direction of the mask along the mask is greater than the amount of sag in the direction of the mask.
  • the amount of sag in the direction of the mask reduces the pressing force between the vapor deposition backsheet and the mask.
  • the mask assembly 10 further includes a second supporting strip 302 fixed on the support frame 300, and the second supporting strip 302 is in the plane of the supporting frame 300.
  • the second overlap portion is located in the projection area of the ineffective mask region 202 on the plane of the support frame 300.
  • the second support strip 302 is disposed on a side of the mask 200 adjacent to the support frame 300.
  • the relative position of the second support bar 302 and the first support bar 301 is not limited, and may be disposed in a crossover manner or may be overlapped, that is, the second support bar 302 may be disposed in the same manner as the first support bar 301. , for example, a straight shape or a bent shape.
  • the first support bar 301 and the second support bar 302 have overlapping regions.
  • the first support strip 301 and the second support strip 302 in the overlapping area can support the backplane 100 at the same time, and the backplane 100 is reduced closer to the mask 200.
  • the amount of sag on the direction F, further The offset of the mask 200 is reduced.
  • first support bar 301 and the second support bar 302 have overlapping regions.
  • the central axis M-M' of the first support bar 301 and the central axis N-N' of the second support bar 302 are not Coincident, the first support bar 301 and the second support bar 302 have overlapping regions.
  • the central axes of the first support bar 301 and the second support bar 302 may completely coincide with each other, M-M', the first support bar 301 and the second support bar. 302 has an overlapping area.
  • the backing plate 100 presses the reticle 200 if the central axes of the first supporting strip 301 and the second supporting strip 302 do not coincide, the first supporting strip 301 and the second are easily made under the pressing force of the backing plate 100.
  • the support strips 302 are misaligned, which in turn affects the effective mask region 201 of the reticle 200.
  • the arrangement as shown in FIG. 4b can be considered, that is, the first support bar 301 coincides with the central axis of the second support bar 302.
  • the first support bar 301 and the central axis of the second support bar 302 (as shown in FIG. 4b), on the one hand, in order to simultaneously add the first support bar 301 and the second support bar 302 to the back plate.
  • the supporting force of 100 reduces the amount of sag of the backing plate 100 in the direction of the reticle 200; on the other hand, in order to further improve the relative stability of the first supporting strip 301 and the second supporting strip 302 when subjected to a pressing force, The probability of the first support bar 301 and the second support bar 302 being misaligned is reduced; in yet another example, the central axes of the first support bar 301 and the second support bar 302 may be completely coincident as shown in FIG. 4c.
  • the widths of the first support bar 301 and the second support bar 302 are equal, so that the first support bar 301 and the second support bar 302 can be subjected to the pressing force while increasing the supporting force on the back plate 100.
  • the relative stability of time is
  • the widths of the first support strip 301 and the second support strip 302 disposed in the ineffective mask region 202 can be increased as much as possible.
  • the amount of sag of the back plate 100 in the direction F near the mask 200 is minimized.
  • first support strip 301 and the second support strip 302 select, for example, a metal material having a relatively high rigidity.
  • the vapor deposition chamber has a certain vapor deposition temperature due to different materials.
  • the coefficient of thermal expansion is different, that is, the amount of expansion and contraction of different materials varies when the temperature changes. Therefore, in one example, the materials of the first support strip 301 and the second support strip 302 are the same as those of the mask 200, such as a stainless steel material, which can provide sufficient support force to the back sheet 100 while avoiding evaporation.
  • the amount of expansion and contraction caused by the difference in thermal expansion coefficients of the first support strip 301, the second support strip 302, and the mask 200 is different, so that the first The relative positions of the support strip 301 and the second support strip 302 and the mask 200 change, and the vapor deposition material cannot be accurately vapor-deposited to a predetermined position on the back sheet 100.
  • the first support bar 301 is disposed on a side of the mask 200 facing away from the support frame 300, as shown in FIG. 5a, when the back plate 100 is attached to the mask 200 during the sagging process, The height difference ⁇ H formed between the back plate 100 and the reticle 200 is large, so that the vapor deposition material passes through the effective mask area 201 of the reticle 200 at a certain inclination angle during the evaporation process.
  • This height difference ⁇ H is vapor-deposited onto the ineffective mask region 202 of the back sheet 100, resulting in vapor deposition shadows on the vapor deposition pattern formed on the back sheet 100. Therefore, as shown in FIG.
  • a groove 303 is provided on a side of the mask 200 facing away from the support frame 300, and at least a portion of the first support bar 301 is located in the groove 303.
  • FIG. 5b shows that a portion of the first support strip 301 is located within the recess 303, it may also be provided in another example that the first support strip 301 is entirely located within the recess 303. In this way, the height difference ⁇ H between the back plate 100 and the reticle 200 can be reduced on the basis of ensuring the effective supporting force of the first support bar 301 on the back plate 100, thereby reducing the steam formed on the back plate 100.
  • the evaporation shadows present in the plating pattern can be reduced on the basis of ensuring the effective supporting force of the first support bar 301 on the back plate 100, thereby reducing the steam formed on the back plate 100.
  • the groove 303 on the side of the mask 200 facing away from the support frame 300 can be formed by a process using a semi-transmissive mask process, exposure, etching, etc. in the process of fabricating the mask 200.
  • a photoresist is coated on the metal plate for constituting the mask 200, and then the metal plate is exposed by a semi-transmissive mask, wherein the semi-transmissive mask is used.
  • the light transmissive area, the semi-transparent area, and the opaque area are included.
  • the above-mentioned recess 303 is formed at the corresponding semi-transmissive region on the metal plate by an etching process.
  • the surface of the first support strip 301 facing away from the support frame 300 is flush with the surface of the mask 200 that faces away from the support frame 300.
  • the surface of the first support strip 301 facing away from the support frame 300 and the surface of the mask 200 facing away from the support frame 300 mean that the surface of the first support strip 301 facing away from the support frame 300 deviates from the mask 200.
  • the surfaces of the support frame 300 are in the same plane.
  • the surface of the first support strip 301 facing away from the support frame 300 can be regarded as The reticle 200 faces away from the surface of the support frame 300.
  • the surface of the first support strip 301 facing away from the support frame 300 is slightly lower than the surface of the mask 200 facing away from the support frame 300, that is, the surface of the first support strip 301 facing away from the support frame 300 and the mask version.
  • the reticle 200 may be deformed downward by being pressed, and after the reticle 200 is deformed downward, the backing plate 100 and the first supporting strip 301 are placed.
  • the first support bar 301 in the same plane can support the back plate 100 during the process of the back plate 100 continuing to sag.
  • the pressing force of a part of the backing plate 100 against the mask 200 is shared by the first support bar 301, and the amount of offset of the mask 200 can be reduced.
  • the surface of the first support strip 301 facing away from the support frame 300 is slightly higher than the surface of the mask 200 facing away from the support frame 300, so that there is a height difference ⁇ H between the back plate 100 and the mask 200. If the height difference ⁇ H is greater than 5 ⁇ m, a large gap exists between the back plate 100 and the mask 200 during the evaporation process, thereby causing vapor deposition shadows on the vapor deposition pattern formed on the back plate 100. Therefore, in one example, the above-described height difference ⁇ H is less than or equal to 5 ⁇ m.
  • the backing plate 100 when the backing plate 100 is suspended in the direction F near the mask 200, the backing plate 100 first contacts the first supporting strip 301, so that the first supporting strip 301 can support the backing plate 100.
  • the mask 200 can be adsorbed by the magnetic attraction device (the generated magnetic force) to reduce or eliminate the height difference ⁇ H. .
  • the vapor deposition shadow existing in the vapor deposition pattern formed on the backing plate 100 is avoided, in one example, as shown in FIG. 6a. It is shown that the surface of the first support strip 301 facing away from the support frame 300 is flush with the surface of the mask 200 facing away from the support frame 300.
  • the depth D1 of the groove 303 accounts for 40% to 60% of the thickness D2 of the ineffective mask region 202 of the mask 200. Specifically, if the ratio of the depth D1 of the groove 303 to the thickness D2 of the ineffective mask region 202 is less than 40%, the thickness of the first support bar 301 disposed in the groove 303 is limited, so that the support cannot be effectively supported. If the ratio of the depth D1 of the groove 303 to the thickness D2 of the ineffective mask region 202 is greater than 60%, since the depth D1 of the groove 303 is too large, the strength of the mask 200 at the position of the groove 303 is lowered. Thereby, the mask 200 is liable to be damaged or broken at the position of the groove 303.
  • the mask assembly 10 when the mask assembly 10 includes at least two masks 200, for example, the mask assembly 10 as shown in FIG. 3a includes three masks 200 between adjacent masks 200. There is a certain gap region C.
  • the slit region C corresponds to the cutting line region of the backing plate 100, so that the vapor deposition material is vapor-deposited through the slit region C to the cutting line region on the backing plate 100.
  • the steam is vapor-deposited on the back sheet 100 through the slit region C.
  • the plating material corresponds to the assembly area around the display substrate, and the presence of the evaporation material may cause a poor sealing phenomenon in the subsequent assembly process.
  • a shielding strip 304 fixed to the support frame 300 is disposed between the adjacent two masks 200 and on a side close to the support frame 300.
  • the shielding strip 304 has a certain shielding effect on the evaporation material, thereby preventing the evaporation material from being directly vapor-deposited to the backing plate through the slit region C.
  • the area of the cutting line on the 100 thereby avoiding the phenomenon that the display substrate is poorly sealed during subsequent assembly.
  • the shielding strip 304 is disposed on a side of the second supporting strip 302 adjacent to the support frame 300.
  • the second support bar 302 is closer to the backplane 100 than the shield strip 304, and the second support strip 302 first provides a certain supporting force to the backplane 100, thereby reducing the backplane 100.
  • the pressing force on the shielding strip 304 further reduces the probability that the shielding strip 304 is deflected by the pressing, so that the shielding strip 304 can effectively shield the organic material.
  • Alignment region B is present between at least one of the second set of opposite sides Y and Y' of the shelf 300.
  • the mask assembly 10 further includes a spacer layer B disposed on the alignment region B and fixed to The alignment plate 305 on the first pair of opposite sides X and X' of the support frame 300; wherein the two ends of the first support bar 301 are respectively fixed to the second pair of opposite sides Y and Y' of the support frame 300.
  • an alignment mark 3051 is disposed on the back plate 100 and the alignment plate 305.
  • the alignment mark 3051 may be a circular hole shape mark or a T type mark, or a cross.
  • the type of mark is not limited in this application.
  • the effective mask region 201 of the mask 200 is aligned with the evaporation effective region on the back sheet 100. For example, in the process of mounting the mask assembly 10, coordinate positioning is used to locate the same coordinate system. The position of the mask 200 and the alignment plate 305 is accurately positioned, and then the circular alignment mark on the alignment plate 305 corresponds to the position of the cross-alignment mark on the back plate 100 during the evaporation process.
  • the T-type alignment mark on the alignment board 305 corresponds to the T-type registration mark position on the backplane 100 to accurately determine the position of the backboard 100 and the alignment board 305, thereby enabling masking.
  • the effective mask region 201 of the reticle 200 is precisely aligned by the alignment plate 305 and the vapor deposition effective region on the back plate 100.
  • the embodiment of the present application further provides a method for installing a mask assembly, as shown in FIG. 9.
  • the mask assembly 10 includes a support frame 300 (in which the support frame 300 shown in FIG. 8a is rectangular), and the first support The strip 301, the mask 200, the method of installing the mask assembly 10 includes:
  • the mask 200 is attached to the first set of opposite sides X and X' of the support frame 300.
  • the first support bar 301 is fixed on the second pair of opposite sides Y and Y' of the support frame 300 and is disposed to be located away from the mask plate 200. On one side of the support frame 300.
  • the method for installing the mask assembly 10 includes:
  • the position of the shielding strip 304 corresponds to the gap area C of the adjacent two pre-fixed adjacent masks 200.
  • the shielding strip 304 has a certain shielding effect on the vapor deposition material, thereby preventing the vapor deposition material from being directly vapor-deposited onto the backing plate 100 through the slit region C, thereby avoiding the phenomenon that the display substrate is poorly sealed during subsequent assembly.
  • the second support bar 302 is fixed to the second pair of opposite sides Y and Y' of the support frame 300.
  • the amount of sag of the backing plate 100 in the direction F near the mask 200 can be reduced, and the pressing force of the mask 200 by the backing plate 100 can be reduced. Further, the offset amount of the mask 200 is lowered, and the accuracy of vapor deposition of the vapor deposition material to a predetermined position on the back sheet 100 is improved.
  • the present application first fixes the shielding strip 304 on the support frame 300 and then fixes the second supporting strip 302.
  • the second supporting strip 302 is closer to the backing plate 100 than the shielding strip 304, and the second support
  • the strip 302 will first provide a certain supporting force to the backing plate 100, thereby reducing the pressing force of the backing plate 100 on the shielding strip 304, thereby reducing the probability that the shielding strip 304 will be displaced due to the pressing, so that the shielding strip 304 can be effectively effective. It plays a role in shielding the evaporation material.
  • the mask 200 is fixed on the first pair of opposite sides X and X' of the support frame 300; wherein, the adjacent two masks 200 The gap corresponds to the position of the mask strip 304, and the second support strip 302 is located on the ineffective mask area 201 of the mask 200.
  • the alignment plate 305 is also fixed to the first set of opposite sides X and X' of the support frame 300 for passing the effective mask area 201 of the mask 200
  • the alignment plate 305 and the evaporation effective area on the back plate 100 are accurately positioned.
  • the second support bar 302 may be loose.
  • the first support bar 301 is also loosened. Therefore, for example, the first support bar 301 and the second support bar 302 are directly fixed on the support frame 300, respectively, to avoid mutual influence.
  • the shielding strip 304, the first supporting strip 301, the second supporting strip 302, the mask 200, and the shielding strip 304 may be fixed to the supporting frame 300 by welding.
  • the area Q shown in FIG. 8b is welded.
  • the present invention is not limited to the present invention, as long as the shielding strip 304, the first supporting strip 301, the second supporting strip 302, the mask 200, and the masking strip 304 can be ensured. It can be accurately fixed to the support frame 300.
  • the embodiment of the present application further provides an evaporation device, as shown in FIG. 10, the evaporation device includes an evaporation source 20 and a mask assembly 10; wherein the support frame 300 in the mask assembly 10 is set to be compared
  • the reticle 200 is adjacent to the evaporation source 20, and the reticle assembly 10 is fixed to the fixture 30 above the evaporation source 20 by the support frame 300 in the reticle assembly 10.
  • the vapor deposition apparatus includes the above-described mask assembly having the same structure and advantageous effects as the mask assembly provided in the foregoing embodiment. Since the structure and the beneficial effects of the mask module have been described in detail in the foregoing embodiments, they are not described herein again.

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Abstract

一种掩膜版组件（10）、一种安装掩膜版组件（10）的方法及一种蒸镀装置。掩膜版组件（10）包括支撑架（300）；固定于支撑架（300）上的掩膜版（200），掩膜版（200）包括有效掩膜区（201）和包围有效掩膜区（201）的无效掩膜区（202）；固定于支撑架（300）上的第一支撑条（301），第一支撑条（301）设置于掩膜版（200）背离支撑架（300）的一侧，且第一支撑条（301）在支撑架（300）所在平面的投影与掩模版（200）在支撑架（300）所在平面的投影存在第一交叠部分，第一交叠部分位于无效掩膜区（202）在支撑架（300）所在平面的投影区域内。

Description

掩膜版组件及其安装方法、蒸镀装置
本申请要求于2016年06月28日递交的、申请号为201610493408.6、发明名称为“一种掩膜版组件及其安装方法、蒸镀装置”的中国专利申请的优先权，其全部内容通过引用并入本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种掩膜版组件及其安装方法、蒸镀装置。
背景技术
有机发光二极管(Organic Light Emitting Diode，简称OLED)显示器因其具有自发光、轻薄、功耗低、高对比度、高色域、可实现柔性显示等优点，已被广泛地应用于包括电脑、手机等电子产品在内的各种电子设备中。
OLED显示器件包括阴极层、有机材料功能层以及阳极层等，其中，有机材料功能层一般利用掩膜版将蒸镀材料蒸镀至蒸镀用背板的预设位置。
发明内容
本申请实施例一方面提供一种掩膜版组件，包括支撑架以及固定于所述支撑架上的掩膜版；所述掩膜版包括有效掩膜区和包围所述有效掩膜区的无效掩膜区。所述掩膜版组件还包括固定于所述支撑架上的第一支撑条，所述第一支撑条设置于所述掩膜版背离所述支撑架的一侧，且所述第一支撑条在所述支撑架所在平面的投影与所述掩模板在所述支撑架所在平面的投影存在第一交叠部分，所述第一交叠部分位于所述无效掩膜区在所述支撑架所在平面的投影区域内。
在一个示例中，该掩膜版组件还包括固定于所述支撑架上的第二支撑条，所述第二支撑条设置于所述掩膜版靠近所述支撑架的一侧，且所述第二支撑条在所述支撑架所在平面的投影与所述掩模板在所述支撑架所在平面的投影存在第二交叠部分，所述第二交叠部分位于所述无效掩膜区在所述支撑架所在平面的投影区域内。
在一个示例中，所述第一支撑条与所述第二支撑条的延伸方向相同，且具有重叠区域。
在一个示例中，所述第一支撑条与所述第二支撑条的中轴线完全重合，和/或具有相等的宽度。
在一个示例中，所述第一支撑条为直线形状或弯折形状。
在一个示例中，所述第二支撑条为直线形状或弯折形状。
在一个示例中，所述第一支撑条、所述第二支撑条和掩模版由相同的材料制成。
在一个示例中，所述掩膜版在背离所述支撑架的一侧设置有凹槽，且所述第一支撑条的至少一部分位于所述凹槽内。
在一个示例中，所述第一支撑条背离所述支撑架的表面与所述掩膜版背离所述支撑架的表面具有高度差，所述高度差的绝对值小于或等于5μm。
在一个示例中，所述第一支撑条背离所述支撑架的表面与所述掩膜版背离所述支撑架的表面平齐，或通过磁力吸附掩模版来减小所述高度差。
在一个示例中，所述凹槽的深度占所述掩膜版无效掩膜区的厚度的百分比为40％～60％。
在一个示例中，当所述掩膜版组件包括至少两个掩膜版时，在相邻两个所述掩膜版之间，且靠近所述支撑架的一侧设置有固定于所述支撑架上的遮蔽条。
在一个示例中，在所述掩膜版组件包括所述遮蔽条和第二支撑条的情况下，所述遮蔽条设置于所述第二支撑条靠近所述支撑架的一侧。
在一个示例中，所述支撑架为矩形框架；所述掩膜版的两端分别固定于所述支撑架的第一组对边上，所述掩膜版与所述支撑架的第二组对边中的至少一个边之间具有间隙区域；所述掩膜版组件还包括设置于所述间隙区域且固定于所述支撑架的第一组对边上的对位板；所述第一支撑条的两端分别固定于所述支撑架的第二组对边上。
在一个示例中，所述背板和对位板上均设置有对位标记。
在一个示例中，每个所述掩模版包括至少一个有效掩膜区。
在一个示例中，所述掩膜版的有效掩膜区包括多个间隔设置的遮挡条。
在一个示例中，所述掩模版为小孔形的掩模版、长条形的掩模版或它们的任意组合。
在一个示例中，所述掩膜版为精细金属掩膜版。
本申请实施例的另一方面还提供一种安装掩膜版组件的方法，所述掩膜版组件包括支撑架、掩膜版、第一支撑条；所述方法包括：将所述掩膜版固定于所述支撑架的第一组对边上；在固定有所述掩膜版的支撑架上，将所述第一支撑条固定于所述支撑架的第二组对边上且设置成位于所述掩膜版背离所述支撑架的一侧上。
在一个示例中，在所述掩膜版组件还包括在第二支撑条、至少两个所述掩膜版、遮蔽条时，所述方法包括以下步骤：将所述遮蔽条固定于所述支撑架的第一组对边上；在固定有所述遮蔽条的支撑架上，将所述第二支撑条固定于所述支撑架的第二组对边上；在固定有所述第二支撑条的支撑架上，将所述掩膜版固定于所述支撑架的第一组对边上；其中，相邻的两个所述掩膜版的间隙与所述遮蔽条的位置对应，所述第二支撑条位于所述掩膜版的无效掩膜区上；在固定有所述掩膜版的支撑架上，将所述第一支撑条固定于所述支撑架的第二组对边上，且所述第一支撑条位于所述掩膜版的凹槽内。
在一个示例中，所述方法还包括步骤：
在支撑架的第一组对边上固定掩膜版的同时，在掩膜版与支撑架的第二组对边的至少一个边之间的对位区域处，还将对位板固定于支撑架的第一组对边上。
本申请的实施例的又一方面还提供一种蒸镀装置，包括蒸镀源和上述的掩膜版组件；其中，所述掩膜版组件中的支撑架设置成比掩膜版更靠近所述蒸镀源。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1a为背板和掩膜版在贴合时的结构示意图；
图1b为掩膜版的结构示意图；
图2a为本申请实施例提供的一种掩膜版组件的结构示意图；
图2b为沿图2a中的线O-O’获得的剖视图；
图2c为本申请实施例提供的一种掩膜版的结构示意图；
图2d为本申请实施例提供的另一种掩膜版的结构示意图；
图2e为本申请实施例提供的另一种掩膜版组件的结构示意图；
图3a为本申请实施例提供的一种包括第二支撑条的掩膜版组件的结构示意图；
图3b为沿图3a中的线P-P’获得的剖视图；
图4a为图3b中区域A在一个示例中的局部放大图；
图4b为图3b中区域A在另一示例中的局部放大图；
图4c为图3b中区域A在还一示例中的局部放大图；
图5a为本申请实施例提供的一种背板和掩膜版在贴合时的结构示意图；
图5b为本申请实施例提供的另一种背板和掩膜版在贴合时的结构示意图；
图6a为本申请实施例提供的另一种背板和掩膜版在贴合时的结构示意图；
图6b为本申请实施例提供的另一种背板和掩膜版在贴合时的结构示意图；
图7a为本申请实施例提供的一种包括遮蔽条的掩膜版组件的结构示意图；
图7b为沿图7a中的线S-S’获得的剖视图；
图8a为本申请实施例提供的一种包括对位板的掩膜版组件的结构示意图；
图8b为沿图8a中的线G-G’获得的剖视图；
图9为本申请实施例提供的一种安装掩膜版组件的方法的流程图；
图10为本申请实施例提供的一种蒸镀装置的结构示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
如图1a所示，在蒸镀的过程中，为了将蒸镀材料准确地蒸镀至蒸镀用背板100的预设位置，需要将蒸镀用背板100与下方的掩膜版200进行贴合。然而，当蒸镀用背板100与掩膜版200贴合时，由于蒸镀用背板100与掩膜版200相比，蒸镀用背板100自身的重力较大，从而使得蒸镀用背板100在沿靠近掩膜版200的方向F上具有的下垂量比掩膜版200在该方向上的下垂量大。这样一来，当蒸镀用背板100和掩膜版200在接触后会产生相对的滑动，进而会使得掩膜版200发生偏移，从而导致蒸镀至蒸镀用背板100上蒸镀材料的位置发生偏移。此外，如图1b所示，上述掩膜版200上的有效掩膜区201包括多个间隔设置的遮挡条2011。当蒸镀用背板100和掩膜版200在接触后产生相对滑动的过程中，背板100和遮挡条2011之间会产生摩擦，在该摩擦力的作用下，很容易使得遮挡条2011发生偏移和损坏，进而造成混色等不良现象。
综上所述，由于蒸镀用背板100的下垂量比掩膜版200的下垂量大，当蒸镀用背板100与掩膜版200贴合时，掩膜版200以及遮挡条2011会发生偏移，从而使得 蒸镀材料不能有效地蒸镀至蒸镀用背板100上规定的位置，进而降低了产品的合格率。
本申请实施例提供一种掩膜版组件，如图2a所示，该掩膜版组件10包括支撑架300以及固定于支撑架300上的掩膜版200，其中以图2a包括三个掩膜版为例进行说明。掩膜版200包括有效掩膜区201和包围有效掩膜区201的无效掩膜区202。
此外，如图2a和图2b所示，掩膜版组件10还包括固定于支撑架300上的第一支撑条301，第一支撑条301设置于掩膜版200背离支撑架300一侧，且所述第一支撑条301在支撑架300所在平面的投影与掩模板200在支撑架300所在平面的投影存在第一交叠部分，该第一交叠部分位于无效掩膜区202在支撑架300所在平面的投影区域内。其中，将第一支撑条301设置于无效掩膜区202上能够避免在蒸镀过程中第一支撑条301对有效掩膜区201产生影响。
需要说明的是，上述掩膜版200的有效掩膜区201是指蒸镀材料能够透过该区域，并蒸镀至位于掩膜版200上方的蒸镀用背板100上；无效掩膜区202用于遮挡蒸镀材料，以使得该蒸镀材料无法透过该区域蒸镀至蒸镀用背板100(以下简称为背板100)上。
另外，单个掩膜版200上可以设置至少一个，例如多个有效掩膜区201，例如，如图1b所示设置有3×3矩阵形式的9个有效掩膜区201，或者也可以如图2a所示设置有成一列形式的3个有效掩膜区201。本申请对有效掩膜区201的个数和排列方式不做限定，在实际的生产过程中可以根据生产需求进行选择。
在此基础上，上述掩膜版200也可以为如图2c所示小孔形的掩膜版(Slot Type Mask)；或者为如图2d所示的长条形的掩膜版(Slit Type Mask)。例如，在制作OLED显示器时，通常采用长条形的掩膜版(如图2a所示，为FMM(Fine Metal Mask，精细金属掩膜版))。该FMM在有效掩膜区201中的遮挡条2011的宽度仅为几十微米左右，其抗压强度较小，但是在第一支撑条301对该背板100提供支撑力的作用下，能够有效的减小背板100对有效掩膜区201中的遮挡条2011的挤压，进而有效地减小了该FMM中遮挡条2011的偏移和损坏。
此处还需要说明的是，上述位于无效掩膜区202上的第一支撑条301可以如图2a所示为直线形状，也可以如图2e所示为弯折形状。然而，由于背板100的中间区域在沿靠近掩膜版200的方向F上产生的下垂量最大，因此掩膜版200对应背板100的中间区域受到的挤压力最大。因此，在一个示例中，如图2a所示，将在掩膜版200的中间区域设置第一支撑条301，且该第一支撑条301为直线形状，能够在满足 对背板100的中间区域提供支撑力的同时，使得第一支撑条301的用料最少。以下实施例均是以图2a所示第一支撑条301为例，对本申请做进一步的解释说明。
在本申请实施例提供的掩膜版组件中，该掩模版组件包括支撑架以及固定于支撑架上的掩膜版，掩膜版包括有效掩膜区和包围有效掩膜区的无效掩膜区，掩膜版组件还包括固定于支撑架上的第一支撑条，第一支撑条设置于掩膜版背离所述支撑架的一侧，且位于无效掩膜区上。通过将第一支撑条设置于无效掩膜区上能够避免在蒸镀过程中第一支撑条对有效掩膜区产生影响。
在蒸镀过程中，蒸镀用背板通常位于掩膜版的上方，以使得由蒸镀源蒸镀出的材料能够经过掩膜版后蒸镀至上述蒸镀用背板上，且蒸镀用背板在沿靠近掩膜版的方向上的下垂量比掩膜版在该方向上的下垂量大。在此情况下，通过设置于掩膜版靠近蒸镀用背板一侧的第一支撑条，可以对上述蒸镀用背板提供一定的支撑力，从而能够减小蒸镀用背板沿靠近掩膜版的方向上的下垂量，进而减小蒸镀用背板与掩膜版之间的挤压力。这样一来，使得蒸镀用背板与掩膜版之间因上述挤压力产生的摩擦力减小，从而能够降低掩膜版以及有效掩膜区中的遮挡条发生偏移和损坏的几率，进而提高了蒸镀材料蒸镀至蒸镀用背板上规定位置的准确性，提高了产品的合格率。
为了进一步提高对背板100的支撑力，如图3a所示，上述掩膜版组件10还包括固定于支撑架300上的第二支撑条302，且第二支撑条302在支撑架300所在平面的投影与掩模板200在支撑架300所在平面的投影存在第二交叠部分，该第二交叠部分位于无效掩膜区202在支撑架300所在平面的投影区域内。如图3a和图3b所示，该第二支撑条302设置于掩膜版200靠近支撑架300的一侧。
这样，在该第二支撑条302的支撑作用下，能够进一步减小背板100在沿靠近掩膜版200方向F上的下垂量，降低掩膜版200受到背板100的挤压力，进而降低掩膜版200的偏移量，提高蒸镀材料蒸镀至背板100上规定位置的准确性。另外，本申请对第二支撑条302与第一支撑条301的相对位置不做限定，可以交叉设置，也可以重叠设置，即可以以与第一支撑条301相同的方式设置第二支撑条302，例如直线形状或弯折形状。
在此基础上，为了最大程度地增加第一支撑条301和第二支撑条302对背板100的支撑力，在一个示例中，如图3a所示，第一支撑条301和第二支撑条302的延伸方向相同，且第一支撑条301与第二支撑条302具有重叠区域。这样，如图3b所示，通过上述重叠区域内的第一支撑条301和第二支撑条302能够同时对背板100起到支撑，更大程度上降低背板100在沿靠近掩膜版200的方向F上的下垂量，进一步 降低掩膜版200的偏移量。
以下对第一支撑条301与第二支撑条302具有重叠区域的设置方式做进一步的解释说明。
例如，可以在一个示例中，如图4a所示(图3b中区域A的放大图)，第一支撑条301的中轴线M-M’与第二支撑条302的中轴线N-N’不重合，第一支撑条301与第二支撑条302具有重叠区域。
又例如，可以在另一个示例中，如图4b所示，第一支撑条301与第二支撑条302的中轴线可以完全重合均为M-M’，第一支撑条301与第二支撑条302具有重叠区域。
当背板100挤压掩膜版200时，如果第一支撑条301与第二支撑条302的中轴线不重合，在背板100的挤压作用力下容易使得第一支撑条301与第二支撑条302发生错位，进而会对掩膜版200的有效掩膜区201产生影响。在这种情况下，可以考虑如图4b所示的设置方式，即第一支撑条301与第二支撑条302的中轴线重合。
进一步的，在第一支撑条301与第二支撑条302的中轴线重合的基础上(如图4b所示)，一方面，为了同时增加第一支撑条301与第二支撑条302对背板100的支撑力，降低背板100在靠近掩膜版200方向上的下垂量；另一方面，为了进一步提高第一支撑条301与第二支撑条302在受到挤压力时的相对稳定性，降低第一支撑条301与第二支撑条302发生错位的几率；在还一个示例中，可以如图4c所示，将第一支撑条301与第二支撑条302的中轴线设置为完全重合，且第一支撑条301与第二支撑条302的宽度相等，这样一来，能够在提高对背板100的支撑力的同时，增加第一支撑条301与第二支撑条302在受到挤压力时的相对稳定性。
在此基础上，在不影响掩膜版200中有效掩膜区201的基础上，可以尽可能的增大设置在无效掩膜区202内第一支撑条301与第二支撑条302的宽度，以实现通过第一支撑条301和第二支撑条302对背板100提供最大的支撑力，最大程度上降低背板100在沿靠近掩膜版200的方向F上的下垂量。
此外，还需要说明的是，第一支撑条301和第二支撑条302例如选择刚度较大的金属材料，然而在蒸镀过程中，蒸镀腔内具有一定的蒸镀温度，由于不同材质的热膨胀系数不同，即不同材质在温度发生改变时出现的胀缩量不同。因此，在一个示例中，第一支撑条301和第二支撑条302的材质与掩膜版200的材质相同，例如不锈钢材料，能够给背板100提供足够的支撑力的同时，避免在蒸镀作业中，因第一支撑条301、第二支撑条302与掩膜版200的热膨胀系数不同引起的胀缩量不同，使得第一 支撑条301、第二支撑条302与掩膜版200相对位置发生变化，导致蒸镀材料不能准确的蒸镀至背板100上规定位置的现象。
进一步的，由于上述第一支撑条301设置在掩膜版200背离支撑架300的一侧，这样，如图5a所示，当背板100在下垂的过程中与掩膜版200贴合时，背板100与掩膜版200之间形成的高度差ΔH较大，从而会使得在蒸镀的过程中，在掩膜版200的有效掩膜区201内，蒸镀材料以一定的倾角穿过该高度差ΔH蒸镀至背板100的无效掩膜区202上，导致在背板100上形成的蒸镀图案存在蒸镀阴影。因此，可以如图5b所示，在掩膜版200背离支撑架300的一侧设置有凹槽303，且第一支撑条301的至少一部分位于该凹槽303内。虽然图5b显示出第一支撑条301的一部分位于该凹槽303内，但是还可以在另一示例中设置成第一支撑条301全部位于凹槽303内。这样，能够在保证第一支撑条301对背板100的有效支撑力的基础上，使得背板100与掩膜版200之间的高度差ΔH减小，进而减小背板100上形成的蒸镀图案存在的蒸镀阴影。
此处需要说明的是，在掩膜版200背离支撑架300的一侧的凹槽303可以在制作掩膜版200的过程中通过采用半透过掩膜工艺、曝光、刻蚀等工艺形成。具体的，即在制作掩膜版200时，在用于构成掩膜版200的金属板上涂覆光刻胶，然后采用半透过掩膜对上述金属板进行曝光，其中半透过掩膜包括透光区域、半透光区域以及不透光区域。接下来通过刻蚀工艺，使得上述金属板上对应半透光区域处形成上述凹槽303。
以下对设置于凹槽303中的第一支撑条301的具体情况进行说明。
例如，如图6a所示，第一支撑条301背离支撑架300的表面与掩膜版200背离支撑架300的表面平齐。
需要说明的是，上述第一支撑条301背离支撑架300的表面与掩膜版200背离支撑架300的表面平齐，是指第一支撑条301背离支撑架300的表面与掩膜版200背离支撑架300的表面在同一平面内。当然，当第一支撑条301背离支撑架300的表面与掩膜版200背离支撑架300的表面的高度差在公差范围内时，即可以视为第一支撑条301背离支撑架300的表面与掩膜版200背离支撑架300的表面平齐。
又例如，如图6b所示，第一支撑条301背离支撑架300的表面略低于掩膜版200背离支撑架300的表面，即第一支撑条301背离支撑架300的表面与掩膜版200背离支撑架300的表面之间存在高度差ΔH。如果该高度差ΔH大于5μm，在背板100沿靠近掩膜版200的方向F下垂时，掩膜版200会由于受到挤压向下产生的形变 量有限而无法与第一支撑条301接触，从而使得第一支撑条301不能给背板100提供支撑力，因此在一个示例中，上述高度差ΔH小于或等于5μm。
在这种情况下，背板100在下垂的过程中，掩膜版200会受到挤压向下产生形变，在掩膜版200向下产生形变后，使得背板100与第一支撑条301处于同一平面，此时，在背板100继续下垂的过程中，处于同一平面内的第一支撑条301能够对背板100起到支撑作用。这样，通过第一支撑条301分担一部分背板100对掩膜版200的挤压力，能够降低掩膜版200的偏移量。
再例如，如图5b所示，第一支撑条301背离支撑架300的表面略高于掩膜版200背离支撑架300的表面，使得背板100与掩膜版200之间存在高度差ΔH，如果该高度差ΔH大于5μm，会使得在蒸镀的过程中，背板100与掩膜版200之间存在较大的间隙，进而导致在背板100上形成的蒸镀图案存在蒸镀阴影，因此在一个示例中，上述高度差ΔH小于或等于5μm。
在这种情况下，背板100在沿靠近掩膜版200的方向F下垂时，背板100首先与第一支撑条301接触，从而使得第一支撑条301能够对背板100起到支撑作用，同时对于背板100与掩膜版200之间存在的较小高度差ΔH，可以通过磁力吸附设备(产生的磁力)来吸附掩膜版200，以达到减小或消除该高度差ΔH的目的。
综上所示，为了最大程度降低背板100与掩膜版200之间的高度差ΔH，避免在背板100上形成的蒸镀图案存在的蒸镀阴影，在一个示例中，如图6a所示，第一支撑条301背离支撑架300的表面与掩膜版200背离支撑架300的表面平齐。
在此基础上，如图6a所示，凹槽303的深度D1占掩膜版200的无效掩膜区202的厚度D2的百分比为40％～60％。具体的，如果该凹槽303深度D1与无效掩膜区202的厚度D2比值小于40％，会使得设置于该凹槽303中的第一支撑条301的厚度有限，从而不能有效的起到支撑作用；如果该凹槽303深度D1与无效掩膜区202的厚度D2比值大于60％，由于该凹槽303的深度D1过大，会使得掩膜版200在该凹槽303位置处的强度降低，从而导致掩膜版200在该凹槽303位置容易发生损坏或者断裂。
此外，当掩膜版组件10包括至少两个掩膜版200时，例如，如图3a所示的掩膜版组件10包括三个掩膜版200，在相邻两个掩膜版200之间存在一定的缝隙区域C，在蒸镀的过程中，该缝隙区域C对应背板100的切割线区域，从而使得蒸镀材料会通过该缝隙区域C蒸镀至背板100上的切割线区域，在蒸镀完成后，将背板100沿该切割线切割为不同的显示基板时，通过上述缝隙区域C蒸镀至背板100上的蒸 镀材料则对应显示基板的四周的组装区域，由于该蒸镀材料的存在，会使得在后续组装过程中出现密封不良的现象。
为了解决上述技术问题，如图7a所示，在上述相邻两个掩膜版200之间，且靠近支撑架300的一侧设置固定于支撑架300上的遮蔽条304。这样，通过在相邻两个掩膜版200之间设置遮蔽条304，该遮蔽条304对蒸镀材料具有一定的遮挡作用，进而能够避免蒸镀材料通过上述缝隙区域C直接蒸镀至背板100上的切割线区域，从而避免了显示基板在后续组装过程中出现密封不良的现象。
在此基础上，如图7b所示，在掩膜版组件10包括遮蔽条304和第二支撑条302的情况下，遮蔽条304设置于第二支撑条302靠近支撑架300的一侧。这样，当背板100在下垂的过程中，第二支撑条302比遮蔽条304更靠近背板100，第二支撑条302会先对背板100提供一定的支撑力，从而降低了背板100对遮蔽条304的挤压力，进而降低了遮蔽条304因挤压发生偏移的几率，使得遮蔽条304能够有效的起到遮蔽有机材料的作用。
此外，如图7a所示，当上述支撑架300为矩形框架时，掩膜版200的两端分别固定于该支撑架300的第一组对边X和X’上，掩膜版200与支撑架300的第二组对边Y和Y’中的至少一个边之间具有对位区域B。为了使得掩膜版200的有效掩膜区201与背板100上的蒸镀有效区精确对位，如图8a所示，该掩膜版组件10还包括设置于上述对位区域B且固定于支撑架300的第一组对边X和X’上的对位板305；其中，第一支撑条301的两端分别固定于支撑架300的第二组对边Y和Y’上。
具体的，在背板100和对位板305上均设置有对位标记3051，如图8a所示，该对位标记3051可以为圆孔形状的标记，也可以为T型的标记，或者十字型的标记，本申请对此不做限定。将掩膜版200的有效掩膜区201与背板100上的蒸镀有效区进行对位，例如，可以在掩膜版组件10的安装的过程中，采用坐标定位的方式将位于相同坐标系中的掩膜版200和对位板305的位置进行精确定位，然后在蒸镀的过程中，将对位板305上的圆形对位标记与背板100上的十字对位标记位置相对应，和/或，将对位板305上的T型对位标记与背板100上的T型对位标记位置相对应，来精确确定背板100和对位板305的位置，从而能够实现掩膜版200的有效掩膜区201通过对位板305与背板100上的蒸镀有效区精确对位的目的。
本申请实施例还提供一种安装掩膜版组件的方法如图9所示，在该掩膜版组件10包括支撑架300(其中，图8a所示的支撑架300为矩形)、第一支撑条301、掩膜版200时，该安装掩膜版组件10的方法包括：
首先，将掩膜版200固定于支撑架300的第一组对边X和X’上。
然后，在固定有掩膜版200的支撑架300上，将第一支撑条301固定于支撑架300的第二组对边Y和Y’上且设置成位于所述掩膜版200背离所述支撑架300的一侧上。
在此基础上，当上述该掩膜版组件10还包括第二支撑条302、至少两个掩膜版200、遮蔽条304的情况下，该安装掩膜版组件10的方法包括：
以下结合图8a和图8b的掩膜版组件10对上述安装方法进行具体说明。
S101、将遮蔽条304固定于支撑架300的第一组对边X和X’上。
具体的，该遮蔽条304的位置与后续预固定的相邻两个掩膜版200的间隙区域C相对应，这样一来，通过在相邻两个掩膜版200之间设置遮蔽条304，该遮蔽条304对蒸镀材料具有一定的遮挡作用，进而能够避免蒸镀材料通过该缝隙区域C直接蒸镀至背板100上，从而避免了显示基板在后续组装过程中出现密封不良的现象。
S102、在固定有遮蔽条304的支撑架300上，将第二支撑条302固定于支撑架300的第二组对边Y和Y’上。
具体的，在该第二支撑条302的支撑作用下，能够减小背板100在沿靠近掩膜版200的方向F上的下垂量，降低掩膜版200受到背板100的挤压力，进而降低掩膜版200的偏移量，提高蒸镀材料蒸镀至背板100上规定位置的准确性。
此处需要说明的是，本申请通过先在支撑架300上固定遮蔽条304，然后再固定第二支撑条302，这样，第二支撑条302比遮蔽条304更靠近背板100，第二支撑条302会先对背板100提供一定的支撑力，从而降低了背板100对遮蔽条304的挤压力，进而降低了遮蔽条304因挤压发生偏移的几率，使得遮蔽条304能够有效的起到遮蔽蒸镀材料的作用。
S103、在固定有第二支撑条302的支撑架300上，将掩膜版200固定于支撑架300的第一组对边X和X’上；其中，相邻的两个掩膜版200的间隙与遮蔽条304的位置对应，第二支撑条302位于掩膜版200的无效掩膜区201上。
此处需要说明的是，在支撑架300的第一组对边X和X’上固定掩膜版200的同时，在掩膜版200与支撑架300的第二组对边Y和Y’中的至少一个边之间的对位区域B处，还将对位板305固定于支撑架300的第一组对边X和X’上，用于将掩膜版200的有效掩膜区201通过该对位板305与背板100上的蒸镀有效区进行精确定位。
S104、在固定有掩膜版200的支撑架300上，将第一支撑条301固定于支撑架 300的第二组对边Y和Y’上，且第一支撑条301位于掩膜版200的凹槽303内。具体的，通过将第一支撑条301设置于掩膜版200的凹槽303内，能够在保证第一支撑条301的有效支撑力的基础上，使得背板100与掩膜版200之间的高度差ΔH减小，进而降低背板100上形成的蒸镀图案的蒸镀阴影。
此处需要说明的是，如果在将在第二支撑条302固定在支撑架300上后，再将第一支撑条301固定在第二支撑条302上，可能由于第二支撑条302出现松动等异常现象时，导致第一支撑条301也出现松动现象，因此，例如第一支撑条301和第二支撑条302分别直接固定在支撑架300上，以避免两者之间相互影响。
此外，上述遮蔽条304、第一支撑条301、第二支撑条302、掩膜版200、遮蔽条304可以通过焊接的方式固定于支撑架300上，例如图8b所示的区域Q即为焊接点；还可以通过螺栓连接的方式固定于支撑架300上，本申请对此不作限定，只要能够保证遮蔽条304、第一支撑条301、第二支撑条302、掩膜版200、遮蔽条304能够准确的固定于支撑架300上即可。
本申请实施例还提供一种蒸镀装置，如图10所示，该蒸镀装置包括蒸镀源20以及掩膜版组件10；其中，该掩膜版组件10中的支撑架300设置成比掩膜版200靠近蒸镀源20，通过掩膜版组件10中的支撑架300将该掩膜版组件10固定于蒸镀源20上方的固定件30上。
该蒸镀装置包括上述掩膜版组件，具有与前述实施例提供的掩膜版组件相同的结构和有益效果。由于前述实施例已经对该掩膜版组件的结构和有益效果进行了详细的描述，此处不再赘述。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (23)

  1. 一种掩膜版组件，包括：
    支撑架；
    固定于所述支撑架上的掩膜版，所述掩膜版包括有效掩膜区和包围所述有效掩膜区的无效掩膜区；
    固定于所述支撑架上的第一支撑条，所述第一支撑条设置于所述掩膜版背离所述支撑架的一侧，且所述第一支撑条在所述支撑架所在平面的投影与所述掩模板在所述支撑架所在平面的投影存在第一交叠部分，所述第一交叠部分位于所述无效掩膜区在所述支撑架所在平面的投影区域内。
  2. 根据权利要求1所述的掩膜版组件，还包括固定于所述支撑架上的第二支撑条，所述第二支撑条设置于所述掩膜版靠近所述支撑架的一侧，且所述第二支撑条在所述支撑架所在平面的投影与所述掩模板在所述支撑架所在平面的投影存在第二交叠部分，所述第二交叠部分位于所述无效掩膜区在所述支撑架所在平面的投影区域内。
  3. 根据权利要求2所述的掩膜版组件，其中，所述第一支撑条与所述第二支撑条的延伸方向相同，且具有重叠区域。
  4. 根据权利要求3所述的掩模版组件，其中，所述第一支撑条与所述第二支撑条的中轴线完全重合，和/或具有相等的宽度。
  5. 根据权利要求2-4中任一项所述的掩模版组件，其中，所述第一支撑条为直线形状或弯折形状。
  6. 根据权利要求2-5中任一项所述的掩模版组件，其中，所述第二支撑条为直线形状或弯折形状。
  7. 根据权利要求2-6中任一项所述的掩模版组件，其中，所述第一支撑条、所述第二支撑条和掩模版由相同的材料制成。
  8. 根据权利要求1-7中任一项所述的掩膜版组件，其中，所述掩膜版在背离所述支撑架的一侧设置有凹槽，且所述第一支撑条的至少一部分位于所述凹槽内。
  9. 根据权利要求8所述的掩膜版组件，其中，所述第一支撑条背离所述支撑架的表面与所述掩膜版背离所述支撑架的表面具有高度差，所述高度差的绝对值小于或等于5μm。
  10. 根据权利要求8所述的掩膜版组件，其中，所述第一支撑条背离所述支撑 架的表面与所述掩膜版背离所述支撑架的表面平齐，或通过磁力吸附掩模版来减小所述高度差。
  11. 根据权利要求8所述的掩膜版组件，其中，所述凹槽的深度占所述掩膜版无效掩膜区的厚度的百分比为40％～60％。
  12. 根据权利要求1至11中任一项所述的掩膜版组件，其中，所述掩膜版组件包括至少两个掩膜版，在相邻两个所述掩膜版之间，且靠近所述支撑架的一侧设置有固定于所述支撑架上的遮蔽条。
  13. 根据权利要求12所述的掩膜版组件，其中，在所述掩膜版组件包括所述遮蔽条和第二支撑条的情况下，所述遮蔽条设置于所述第二支撑条靠近所述支撑架的一侧。
  14. 根据权利要求1-13中任一项所述的掩膜版组件，其中，所述支撑架为矩形框架；
    所述掩膜版的两端分别固定于所述支撑架的第一组对边上，所述掩膜版与所述支撑架的第二组对边中的至少一个边之间具有间隙区域；
    所述掩膜版组件还包括设置于所述间隙区域且固定于所述支撑架的第一组对边上的对位板；
    所述第一支撑条的两端分别固定于所述支撑架的第二组对边上。
  15. 根据权利要求14所述的掩模版组件，其中，所述背板和对位板上均设置有对位标记。
  16. 根据权利要求1-15中任一项所述的掩膜版组件，其中，每个所述掩模版包括至少一个有效掩膜区。
  17. 根据权利要求1-16中任一项所述的掩膜版组件，其中，所述掩膜版的有效掩膜区包括多个间隔设置的遮挡条。
  18. 根据权利要求1-17中任一项所述的掩模版组件，其中，所述掩模版为小孔形的掩模版、长条形的掩模版或它们的任意组合。
  19. 根据权利要求18所述的掩模版组件，其中所述掩膜版为精细金属掩膜版。
  20. 一种安装掩膜版组件的方法，所述掩膜版组件包括支撑架、掩膜版、第一支撑条；所述方法包括：
    将所述掩膜版固定于所述支撑架的第一组对边上；
    在固定有所述掩膜版的支撑架上，将所述第一支撑条固定于所述支撑架的第二 组对边上且设置成位于所述掩膜版背离所述支撑架的一侧上。
  21. 根据权利要求20所述的方法，其中，在所述掩膜版组件还包括第二支撑条、至少两个所述掩膜版、遮蔽条时，所述方法包括以下步骤：
    将所述遮蔽条固定于所述支撑架的第一组对边上；
    在固定有所述遮蔽条的支撑架上，将所述第二支撑条固定于所述支撑架的第二组对边上；
    在固定有所述第二支撑条的支撑架上，将所述掩膜版固定于所述支撑架的第一组对边上；其中，相邻的两个所述掩膜版的间隙与所述遮蔽条的位置对应，所述第二支撑条位于所述掩膜版的无效掩膜区上；
    在固定有所述掩膜版的支撑架上，将所述第一支撑条固定于所述支撑架的第二组对边上，且所述第一支撑条位于所述掩膜版的凹槽内。
  22. 根据权利要求21所述的方法，还包括步骤：
    在支撑架的第一组对边上固定掩膜版的同时，在掩膜版与支撑架的第二组对边的至少一个边之间的对位区域处，还将对位板固定于支撑架的第一组对边上。
  23. 一种蒸镀装置，包括：
    蒸镀源，和
    根据权利要求1至19任一项所述的掩膜版组件；其中，所述掩膜版组件中的支撑架设置成比掩膜版更靠近所述蒸镀源。
PCT/CN2017/084733 2016-06-28 2017-05-17 掩膜版组件及其安装方法、蒸镀装置 WO2018000977A1 (zh)

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