WO2015096367A1 - 有机电致发光显示器件、其制备方法及显示装置 - Google Patents
有机电致发光显示器件、其制备方法及显示装置 Download PDFInfo
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- WO2015096367A1 WO2015096367A1 PCT/CN2014/078107 CN2014078107W WO2015096367A1 WO 2015096367 A1 WO2015096367 A1 WO 2015096367A1 CN 2014078107 W CN2014078107 W CN 2014078107W WO 2015096367 A1 WO2015096367 A1 WO 2015096367A1
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- 238000000059 patterning Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000005401 electroluminescence Methods 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 20
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Abstract
Description
Claims (10)
- 一种有机电致发光显示器件,包括:基板;薄膜晶体管,位于所述基板上,并包括相互绝缘的栅电极和有源层、以及 与所述有源层电性连接的源电极和漏电极;以及有机电致发光结构,位于所述基板上,并包括依次层叠设置的阳极、发光 层和阴极,所述阳极与所述漏电极电性连接,其中,所述阳极与所述有源层设置在同一层,所述有源层由透明氧化物半 导体材料制成,所述阳极由所述透明氧化物半导体经过等离子体处理后的材 料制成。
- 如权利要求1所述的有机电致发光显示器件,其中,在所述薄膜晶体 管中,所述有源层位于所述栅电极的上方;在所述有源层和所述栅电极之间还 设置有栅极绝缘层;所述源电极和所述漏电极均位于所述有源层的上方。
- 如权利要求1所述的有机电致发光显示器件,其中,在所述薄膜晶体 管中,所述栅电极位于所述有源层的上方;在所述有源层和所述栅电极之间还 设置有栅极绝缘层;所述源电极和所述漏电极均位于所述有源层与所述基板之间。
- 如权利要求1所述的有机电致发光显示器件,其中,在所述薄膜晶体 管中,所述栅电极位于所述有源层的上方;在所述有源层和所述栅电极之间还 设置有栅极绝缘层;所述源电极和所述漏电极均位于所述栅电极的上方,且所述源电极和所 述漏电极通过过孔与所述有源层连接。
- 如权利要求2所述的有机电致发光显示器件,其中,所述有机电致发 光结构中的发光层发白光,所述显示器件还包括:彩色滤光片,所述彩色滤 光片位于所述有机电致发光结构的上方,或位于所述栅极绝缘层与所述有机 电致发光结构之间。
- 如权利要求3或4所述的有机电致发光显示器件,其特征在于,所述 有机电致发光结构中的发光层发白光,所述显示器件还包括:彩色滤光片, 所述彩色滤光片位于所述有机电致发光结构之上,或位于所述有机电致发光 结构之下。
- 如权利要求2或5所述的有机电致发光显示器件,还包括:金属反射 层,所述金属反射层位于与所述有机电致发光结构对应的区域,且所述金属 反射层与所述栅电极设置在同一层并由相同的材料制成。
- 一种显示装置,包括如权利要求1-7任一项所述的有机电致发光显示 器件。
- 一种用于制备如权利要求1-7任一项所述有机电致发光显示器件的方 法,在基板上形成包括薄膜晶体管和有机电致发光结构的步骤中,采用一次构图工艺形成所述薄膜晶体管的有源层和所述有机电致发光结 构中的阳极;以及对形成的所述阳极进行等离子体处理。
- 如权利要求9所述的制备方法,其中,所述在基板上形成包括薄膜晶 体管的步骤包括:在基板上形成栅电极,在形成有所述栅电极的基板上形成有源层,在形 成有所述有源层的基板上形成源电极和漏电极;其中,在基板上形成栅电极的同时,在所述基板上与所述有机电致发光结构对 应的区域形成金属反射层。
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US14/415,242 US9660192B2 (en) | 2013-12-27 | 2014-05-22 | Organic electroluminescent display device with metal reflective layer |
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CN201310743031.1A CN103681773A (zh) | 2013-12-27 | 2013-12-27 | 一种有机电致发光显示器件、其制备方法及显示装置 |
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CN103681773A (zh) * | 2013-12-27 | 2014-03-26 | 京东方科技集团股份有限公司 | 一种有机电致发光显示器件、其制备方法及显示装置 |
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CN105845841A (zh) * | 2015-01-14 | 2016-08-10 | 南京瀚宇彩欣科技有限责任公司 | 半导体装置及其制造方法 |
CN105845545A (zh) * | 2015-01-14 | 2016-08-10 | 南京瀚宇彩欣科技有限责任公司 | 半导体装置及其制造方法 |
CN104716167B (zh) * | 2015-04-13 | 2017-07-25 | 京东方科技集团股份有限公司 | 一种有机电致发光显示器件、其制作方法及显示装置 |
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CN105633016B (zh) * | 2016-03-30 | 2019-04-02 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及制得的tft基板 |
CN105870059A (zh) * | 2016-06-24 | 2016-08-17 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及相关制作方法和显示面板 |
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