WO2018227748A1 - Oled显示面板及其制作方法 - Google Patents

Oled显示面板及其制作方法 Download PDF

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WO2018227748A1
WO2018227748A1 PCT/CN2017/097571 CN2017097571W WO2018227748A1 WO 2018227748 A1 WO2018227748 A1 WO 2018227748A1 CN 2017097571 W CN2017097571 W CN 2017097571W WO 2018227748 A1 WO2018227748 A1 WO 2018227748A1
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layer
disposed
active layer
electrode
light
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PCT/CN2017/097571
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English (en)
French (fr)
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李松杉
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武汉华星光电半导体显示技术有限公司
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Priority to US15/569,776 priority Critical patent/US10121830B1/en
Priority to JP2019569794A priority patent/JP6874167B2/ja
Priority to KR1020207001364A priority patent/KR102328494B1/ko
Priority to EP17913488.7A priority patent/EP3640986A4/en
Publication of WO2018227748A1 publication Critical patent/WO2018227748A1/zh

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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display panel and a method of fabricating the same.
  • the organic light emitting diode display also known as the organic electroluminescent display
  • the organic electroluminescent display is an emerging flat panel display device, which has a simple preparation process, low cost, low power consumption, high luminous brightness, wide operating temperature range, and volume. Lightweight, fast response, and easy to achieve color display and large screen display, easy to achieve and integrated circuit driver, easy to achieve flexible display, etc., thus has broad application prospects.
  • OLED displays can be classified into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), which are direct addressing and thin film transistor matrix addressing.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • TFT Thin Film Transistor
  • the AMOLED generally includes a TFT substrate, an anode, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, and a light-emitting layer provided on the hole transport layer.
  • An OLED device comprising an electron transport layer provided on the light-emitting layer, an electron injection layer provided on the electron transport layer, and a cathode provided on the electron injection layer.
  • the principle of luminescence of OLED display devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an AMOLED display device generally uses an ITO pixel electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • Indium gallium zinc oxide (IGZO) material has the characteristics of high mobility, high on-state current, low off-state current and rapid switching, which can effectively meet the above requirements, and thus has become the field of thin film transistor technology. Research hotspots.
  • the active layer of IGZO in IGZO-TFT is very sensitive to process and environment. Because IGZO has a forbidden band width (about 3.4eV) and ultraviolet (UV) light band gap (higher than 3.1eV), IGZO is for UV light. It has a good absorption effect.
  • the IGZO active layer transitions to the conduction band with valence band electrons and other easily absorbed energy, which causes the threshold voltage of the TFT to shift, resulting in unstable display effect of the display. Therefore, in the conventional top gate IGZO-TFT fabrication process, in order to prevent the IGZO active layer of the driver TFT from being affected by the illumination of the bottom of the TFT, a light leakage current is generated, and a barrier is usually formed at the bottom of the TFT.
  • the IGZO active layer is affected by light incident from the top of the TFT, thereby inducing light leakage current in the active layer, affecting the TFT
  • the characteristics of the TFT threshold voltage Vth may even affect the normal operation of the TFT.
  • An object of the present invention is to provide an OLED display panel, which can reduce the influence of high-energy blue light incident from the top of an IGZO TFT on an active layer by providing a red light-blocking color block completely covering the active layer above the IGZO TFT. Thereby, the light leakage current is prevented, the characteristics of the TFT are ensured, and the normal operation of the IGZO TFT is maintained.
  • Another object of the present invention is to provide a method for fabricating an OLED display panel.
  • the present invention firstly provides an OLED display panel, comprising: a base substrate, a light shielding metal block disposed on the base substrate, a buffer layer disposed on the light shielding metal block and the base substrate, and disposed at the An active layer above the light shielding metal block, a gate insulating layer disposed on the active layer, a gate disposed on the gate insulating layer, and a gate electrode disposed on the buffer layer
  • An interlayer insulating layer on the active layer and the buffer layer, a first via hole and a second via hole disposed on the interlayer insulating layer and corresponding to both sides of the active layer, and the interlayer insulating layer is disposed on the interlayer insulating layer a source and a drain which are in contact with both sides of the active layer through the first via and the second via, a passivation layer provided on the source, the drain and the interlayer insulating layer, respectively a red opaque color blocking block on the passivation layer and completely covering the active layer, a flat layer
  • the first electrode, the OLED light emitting layer and the second electrode together constitute an OLED device; the material of the active layer is indium gallium zinc oxide.
  • the red opaque color blocking block extends outward 2-5 ⁇ m corresponding to the edge of the active layer above the active layer to completely cover the active layer.
  • the OLED device is a bottom emission type OLED device.
  • the OLED display panel further includes a color filter layer disposed in the same layer as the red opaque color block and disposed on the passivation layer;
  • the OLED device is a white light OLED device that emits white light.
  • the materials of the gate, the source and the drain respectively comprise one or more of molybdenum, aluminum, copper, titanium, chromium; the buffer layer, the gate insulating layer, the interlayer insulating layer and the passivation layer
  • the material includes one or more of silicon oxide and silicon nitride, respectively; the material of the first electrode is a transparent conductive metal oxide.
  • the invention also provides a method for manufacturing an OLED display panel, comprising the following steps:
  • Step S1 providing a substrate, depositing and patterning a light-shielding metal block on the substrate, depositing a buffer layer on the light-shielding metal substrate and the substrate, depositing and patterning on the buffer layer Forming an active layer corresponding to the upper portion of the light shielding metal block, sequentially depositing an inorganic material film and a first metal layer on the active layer and the buffer layer, and patterning the inorganic material film and the first metal layer by The inorganic material film obtains a gate insulating layer on the active layer, and the first metal layer obtains a gate on the gate insulating layer, and the gate insulating layer and the gate expose two of the active layer side;
  • the material of the active layer is indium gallium zinc oxide
  • Step S2 depositing an interlayer insulating layer on the gate electrode, the active layer and the buffer layer, and forming a first via hole and a second via hole corresponding to the upper side of the active layer on the interlayer insulating layer, Depositing a second metal layer on the interlayer insulating layer, and patterning the second metal layer to obtain a source that is in contact with both sides of the active layer through the first via and the second via, respectively And the drain;
  • Step S3 depositing a passivation layer on the source, drain, and interlayer insulating layers, and patterning over the active layer on the passivation layer to form a red light-blocking color block completely covering the active layer ;
  • Step S4 patterning a flat layer on the red light-blocking color block and the passivation layer, forming a third via hole corresponding to the drain on the passivation layer, in the flat layer and blunt Forming a first electrode on the layer, the first electrode contacting the drain via the third via, Forming a pixel defining layer on the first electrode and the passivation layer, forming a fourth via hole corresponding to the upper surface of the first electrode on the pixel defining layer, and forming a bottom through hole in the fourth through hole
  • the first electrode, the OLED light emitting layer and the second electrode together constitute an OLED device.
  • the formed red opaque color blocking block extends outwardly from the edge of the active layer by 2-5 ⁇ m above the active layer to completely cover the active layer.
  • the OLED device is a bottom emission type OLED device.
  • the OLED device is a white light OLED device that emits white light
  • the step S3 further includes patterning a color filter layer formed in the same layer as the red light-blocking color block on the passivation layer.
  • the light shielding metal block, the active layer, the gate, the source, the drain and the first electrode are all deposited by physical vapor deposition;
  • the buffer layer, the gate insulating layer, the interlayer insulating layer and the passivation layer are all plasma-treated Deposition by bulk chemical vapor deposition;
  • the materials of the gate, the source and the drain respectively comprise one or more of molybdenum, aluminum, copper, titanium, chromium; the buffer layer, the gate insulating layer, the interlayer insulating layer and the passivation layer
  • the material includes one or more of silicon oxide and silicon nitride, respectively; the material of the first electrode is a transparent conductive metal oxide;
  • the step S1 further includes: performing plasma treatment on the active layer to make the conductor layer by using the gate and the gate insulating layer as a shielding layer;
  • a specific process of patterning the inorganic material film and the first metal layer is: etching the first metal layer by wet etching to obtain a gate corresponding to the upper layer of the active layer And then using the gate as a shielding layer, the inorganic material film is etched by dry etching to obtain a gate insulating layer having the same shape as the gate.
  • the present invention also provides an OLED display panel, comprising a base substrate, a light-shielding metal block disposed on the base substrate, a buffer layer disposed on the light-shielding metal block and the base substrate, and disposed on the buffer layer Corresponding to an active layer above the light shielding metal block, a gate insulating layer disposed on the active layer, a gate disposed on the gate insulating layer, and the gate, the active layer and the buffer layer An interlayer insulating layer, a first via hole and a second via hole disposed on the interlayer insulating layer and corresponding to both sides of the active layer, disposed on the interlayer insulating layer and respectively passing through a via and a second via having a source and a drain in contact with both sides of the active layer, a passivation layer provided on the source, the drain and the interlayer insulating layer, and being disposed on the passivation layer And a red opaque color blocking block completely covering the active layer, a flat layer disposed on the red opaque color blocking
  • the first electrode, the OLED light emitting layer and the second electrode together constitute an OLED device;
  • the material of the active layer is indium gallium zinc oxide;
  • the red opaque color blocking block extends outward 2-5 ⁇ m corresponding to the edge of the active layer above the active layer, thereby completely covering the active layer;
  • the OLED device is a bottom emission type OLED device
  • a color filter layer disposed on the passivation layer in the same layer as the red light-blocking color block
  • the OLED device is a white light OLED device that emits white light
  • the materials of the gate, the source and the drain respectively comprise one or more of molybdenum, aluminum, copper, titanium and chromium; the buffer layer, the gate insulating layer, the interlayer insulating layer and the passivation
  • the material of the layer includes one or more of silicon oxide and silicon nitride, respectively; the material of the first electrode is a transparent conductive metal oxide.
  • the OLED display panel of the present invention and the method of fabricating the same can reduce the high-energy blue light incident from the top of the IGZO TFT by providing a red light-blocking color block completely covering the active layer above the IGZO TFT.
  • the influence of the active layer of IGZO thereby preventing the generation of light leakage current, ensuring the characteristics of the IGZO TFT, maintaining the normal operation of the IGZO TFT, and at the same time, the red opaque color blocking block covering the active layer only blocks the high influence on the active layer of the IGZO TFT.
  • the short-wave blue light of energy, while the light of other wavelength bands can still pass normally, so it does not affect the aperture ratio of the light-emitting area of the OLED display panel.
  • FIG. 1 is a schematic flow chart of a method for fabricating an OLED display panel of the present invention
  • step S1 is a schematic diagram of step S1 of the method for fabricating an OLED display panel of the present invention
  • step S2 is a schematic diagram of step S2 of the method for fabricating an OLED display panel of the present invention
  • step S3 is a schematic diagram of step S3 of the method for fabricating an OLED display panel of the present invention.
  • FIG. 5 is a schematic diagram of the step S4 of the method for fabricating the OLED display panel of the present invention and the present invention A schematic diagram of the structure of an OLED display panel.
  • the present invention firstly provides an OLED display panel, including a substrate substrate 10 , a light shielding metal block 21 disposed on the base substrate 10 , and a buffer disposed on the light shielding metal block 21 and the base substrate 10 .
  • the layer 30 is disposed on the buffer layer 30 and corresponds to the active layer 41 above the light shielding metal block 21, the gate insulating layer 42 disposed on the active layer 41, and the gate insulating layer 42.
  • the upper gate electrode 43 and the interlayer insulating layer 44 disposed on the gate electrode 43 and the active layer 41 and the buffer layer 30 are disposed on the interlayer insulating layer 44 and correspond to upper sides of the active layer 41.
  • a first via 441 and a second via 442 a source disposed on the interlayer insulating layer 44 and contacting the two sides of the active layer 41 through the first via 441 and the second via 442, respectively 45 and a drain 46, a passivation layer 51 disposed on the source 45, the drain 46 and the interlayer insulating layer 44, a red shading resist provided on the passivation layer 51 and completely covering the active layer 41 a block 61, a flat layer 52 disposed on the red light-blocking block 61 and the passivation layer 51, and a third via 511 disposed on the passivation layer 51 and corresponding to the drain 46 a first electrode 71 disposed on the flat layer 52 and the passivation layer 51 and contacting the drain 46 through the third via 511, and a pixel disposed on the first electrode 71 and the passivation layer 51 a defining layer 80, a fourth via hole 811 disposed on the pixel defining layer 80 and corresponding to the first electrode 71, and an OLED light emitting layer
  • the material of the active layer 41 is indium gallium zinc oxide (IGZO), the active layer 41, the gate 43 and the source
  • the OLED display panel of the present invention by providing a red opaque color blocking block 61 completely covering the active layer 41 above the IGZO TFT, the influence of the high-energy blue light incident from the top of the IGZO TFT on the active layer 41 of the IGZO can be reduced.
  • the light leakage current is prevented, the characteristics of the IGZO TFT are ensured, and the normal operation of the IGZO TFT is maintained, and at the same time, since the red light-blocking color blocking block 61 covering the active layer 41 blocks only the high-energy short-wave blue light having an influence on the active layer 41 of the IGZO, The light in other bands can still pass normally, so it does not affect the aperture ratio of the light-emitting area of the OLED display panel.
  • the TFT is a driving TFT for driving the OLED device 70, and for the switching TFT (Switch TFT) in the OLED display panel, the red opaque color blocking block 61 may be disposed thereon by the above method.
  • the red opaque color blocking block 61 may not be disposed on the switching TFT.
  • the red opaque color blocking block 61 extends outwardly from the edge of the active layer 41 over the active layer 41 by 2-5 ⁇ m, that is, each side of the red opaque color blocking block 61 is larger than the active layer 41.
  • the corresponding side edges are 2-5 ⁇ m wide so as to completely cover the active layer 41.
  • the OLED device 70 is a bottom emission type OLED device.
  • the OLED device 70 is a white light emitting OLED device that emits white light; the OLED display panel further includes a color filter disposed in the same layer as the red light blocking color block 61 and disposed on the passivation layer 51. Light layer 62.
  • the materials of the gate electrode 43 , the source electrode 45 and the drain electrode 46 respectively comprise one or more of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and chromium (Gr).
  • the material of the gate electrode 43 , the source electrode 45 and the drain electrode 46 is a stacked combination layer (Cu+Mo—Ti) of a copper layer and a molybdenum-titanium alloy layer.
  • the materials of the buffer layer 30, the gate insulating layer 42, the interlayer insulating layer 44, and the passivation layer 51 respectively include one or more of silicon oxide (SiOx) and silicon nitride (SiNx);
  • the material of the buffer layer 30, the gate insulating layer 42, the interlayer insulating layer 44, and the passivation layer 51 are all silicon oxide.
  • the first electrode 71 and the second electrode 73 respectively serve as an anode and a cathode of the OLED device 70, and the material of the first electrode 71 is a transparent conductive metal oxide; preferably, the material of the first electrode 71 It is indium tin oxide (ITO).
  • ITO indium tin oxide
  • the material of the light shielding metal block 21 is a metal; preferably, the material of the light shielding metal block 21 is a molybdenum titanium alloy (Mo-Ti).
  • the present invention further provides a method for fabricating an OLED display panel, comprising the following steps:
  • Step S1 as shown in FIG. 2, a base substrate 10 is provided on which a light-shielding metal block 21 is deposited and patterned, and a buffer layer is deposited on the light-shielding metal block 21 and the base substrate 10. 30, depositing and patterning on the buffer layer 30 to form an active layer 41 corresponding to the upper portion of the light-shielding metal block 21, and sequentially depositing an inorganic material film and a first metal layer on the active layer 41 and the buffer layer 30, The inorganic material film and the first metal layer are patterned, and the gate insulating layer 42 on the active layer 41 is obtained from the inorganic material film, and the first metal layer is obtained on the gate insulating layer 42. The gate electrode 43 and the gate electrode 43 are exposed on both sides of the active layer 41; the gate layer 43 and the gate insulating layer 42 are used as a shielding layer, and the active layer 41 is performed. Plasma treatment to make it conductive.
  • the material of the active layer 41 is indium gallium zinc oxide.
  • a specific process of patterning the inorganic material film and the first metal layer is: etching the first metal layer by wet etching to obtain an active layer corresponding to the active layer
  • the gate electrode 43 above 41, and then the gate electrode 43 is used as a shielding layer, and the inorganic material film is etched by dry etching to obtain a gate insulating layer 42 having the same shape as the gate electrode 43.
  • Step S2 as shown in FIG. 3, an interlayer insulating layer 44 is deposited on the gate electrode 43, the active layer 41, and the buffer layer 30, and two sides corresponding to the active layer 41 are formed on the interlayer insulating layer 44.
  • a first via 441 and a second via 442 a second metal layer is deposited on the interlayer insulating layer 44, and the second metal layer is patterned to obtain a first via 441 and
  • the second via 442 has a source 45 and a drain 46 that are in contact with both sides of the active layer 41.
  • the active layer 41, the gate electrode 43, the source electrode 45, and the drain electrode 46 together constitute a TFT, which is an IGZO TFT.
  • Step S3 as shown in FIG. 4, a passivation layer 51 is deposited on the source 45, the drain 46, and the interlayer insulating layer 44, and patterned on the passivation layer 51 over the active layer 41.
  • the red opaque color block 61 of the active layer 41 is completely covered.
  • the formed red light-shielding color blocking block 61 extends 2-5 ⁇ m outward corresponding to the edge of the active layer 41 above the active layer 41, thereby completely covering the active layer 41.
  • Step S4 as shown in FIG. 5, a planarization layer 52 is patterned on the red opaque color blocking block 61 and the passivation layer 51, and a portion corresponding to the upper portion of the drain 46 is formed on the passivation layer 51. a three-via hole 511, a first electrode 71 is formed on the flat layer 52 and the passivation layer 51, and the first electrode 71 is in contact with the drain 46 via the third via hole 511.
  • a pixel defining layer 80 is formed on an electrode 71 and a passivation layer 51, and a fourth via hole 811 corresponding to the upper surface of the first electrode 71 is formed on the pixel defining layer 80, and the fourth via hole 811 is formed in the fourth via hole 811
  • the OLED light-emitting layer 72 and the second electrode 73 are formed in this order; the first electrode 71, the OLED light-emitting layer 72 and the second electrode 73 together form an OLED device 70, and the first electrode 71 and the second electrode 73 respectively serve as OLEDs.
  • the anode and cathode of device 70 is formed on an electrode 71 and a passivation layer 51, and a fourth via hole 811 corresponding to the upper surface of the first electrode 71 is formed on the pixel defining layer 80, and the fourth via hole 811 is formed in the fourth via hole 811
  • the OLED light-emitting layer 72 and the second electrode 73 are formed in this order; the first electrode 71, the OLED light
  • the high-energy blue light incident on the IGZO TFT can be reduced to the active layer 41 of the IGZO.
  • the effect of preventing the light leakage current, ensuring the characteristics of the IGZO TFT, maintaining the normal operation of the IGZO TFT, and at the same time, the red light-blocking color blocking block 61 covering the active layer 41 blocks only the high energy that affects the active layer 41 of the IGZO. Short-wave blue light, while other bands of light can still pass normally, so it does not affect the aperture ratio of the OLED display panel illumination area.
  • the OLED device 70 is a bottom emission type OLED device.
  • the OLED device 70 is a white light emitting OLED device that emits white light; the step S3 further includes patterning a color filter layer formed on the passivation layer 51 in the same layer as the red light blocking color block 61. 62.
  • the light shielding metal block 21, the active layer 41, the gate electrode 43, the source electrode 45, the drain electrode 46, and the first electrode 71 are all deposited by physical vapor deposition (PVD); the buffer layer 30
  • the gate insulating layer 42, the interlayer insulating layer 44, and the passivation layer 51 are all deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD).
  • the materials of the gate electrode 43 , the source electrode 45 and the drain electrode 46 respectively include one or more of molybdenum, aluminum, copper, titanium, and chromium; preferably, the gate electrode 43 and the source electrode 45 and The material of the drain 46 is a stacked combination layer of a copper layer and a molybdenum-titanium alloy layer.
  • the materials of the buffer layer 30, the gate insulating layer 42, the interlayer insulating layer 44, and the passivation layer 51 respectively include one or more of silicon oxide and silicon nitride; preferably, the buffer layer 30.
  • the materials of the gate insulating layer 42, the interlayer insulating layer 44, and the passivation layer 51 are all silicon oxide.
  • the material of the first electrode 71 is a transparent conductive metal oxide; preferably, the material of the first electrode 71 is indium tin oxide.
  • the material of the light shielding metal block 21 is a metal; preferably, the material of the light shielding metal block 21 is a molybdenum titanium alloy (Mo-Ti).
  • the present invention provides an OLED display panel and a method for fabricating the same, which can reduce high-energy blue light incident from the top of an IGZO TFT by providing a red light-blocking color block completely covering the active layer above the IGZO TFT.
  • the effect on the active layer of IGZO thereby preventing the generation of light leakage current, ensuring the characteristics of the IGZO TFT, maintaining the normal operation of the IGZO TFT, and at the same time blocking the active layer of the IGZO TFT due to the red opaque color blocking block covering the active layer.
  • High-energy short-wave blue light, while other bands of light can still pass normally, so it does not affect the aperture ratio of the OLED display panel illumination area.

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Abstract

一种OLED显示面板及其制作方法，通过在IGZO TFT的上方设置完全覆盖主动层(41)的红色遮光色阻块(61)，可以减小从IGZO TFT顶部射入的高能量的蓝光对IGZO的主动层(41)的影响，从而防止产生光漏电流，保证IGZO TFT的特性，维持IGZO TFT的正常工作，同时由于覆盖主动层(41)的红色遮光色阻块(61)只阻挡对IGZO TFT的主动层(41)有影响的高能量的短波蓝光，而其他波段的光还是可以正常透过，因此不会影响OLED显示面板发光区的开口率。

Description

OLED显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制作方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器等平面显示装置已成为显示装置中的主流。其中，有机发光二极管显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快，而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点，因而具有广阔的应用前景。
OLED显示器按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
薄膜晶体管(Thin Film Transistor，TFT)是目前液晶显示装置和有源矩阵驱动式有机电致发光显示装置中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。
AMOLED通常包括：TFT基板、以及设于TFT基板上的由阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极所构成的OLED器件。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，AMOLED显示器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子注入层和空穴注入层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
在平板面板工业中，随着目前显示行业中大尺寸化、高解析度的需求 越来越强烈，对主动层半导体器件充放电提出了更高的要求。铟镓锌氧化物(indium gallium zinc oxide，IGZO)材料由于具有高迁移率、高开态电流、低关态电流可迅速开关等特点，能有效满足以上需求，因而已成为目前薄膜晶体管技术领域内的研究热点。但IGZO-TFT中的IGZO主动层对于工艺和环境非常敏感，由于IGZO的禁带宽度(约为3.4eV)与紫外(UV)光的禁带宽度(高于3.1eV)相近，IGZO对UV光有很好的吸收作用，IGZO主动层在UV光的照射下，价带电子等易吸收能量跃迁至导带，使TFT的阈值电压偏移，造成显示器显示效果不稳定。因此，在传统的顶栅型(top gate)IGZO-TFT制作过程中，为防止驱动(driver)TFT的IGZO主动层受到TFT底部光照的影响而产生光漏电流，通常在其底部制作一层阻挡光照的遮光(shielding)金属层，但是对于底发射型OLED(bottom emittion-OLED)的显示面板，IGZO主动层会受到从TFT顶部射入光线的影响，从而诱导主动层产生光漏电流，影响TFT的特性，甚至会造成TFT阈值电压Vth的偏移，影响TFT的正常工作。
发明内容
本发明的目的在于提供一种OLED显示面板，通过在IGZO TFT的上方设置完全覆盖主动层的红色遮光色阻块，可以减小从IGZO TFT顶部射入的高能量的蓝光对主动层的影响，从而防止产生光漏电流，保证TFT的特性，维持IGZO TFT的正常工作。
本发明的目的还在于提供一种OLED显示面板的制作方法，通过在IGZO TFT的上方设置完全覆盖主动层的红色遮光色阻块，可以减小从IGZO TFT顶部射入的高能量的蓝光对主动层的影响，从而防止产生光漏电流，保证TFT的特性，维持IGZO TFT的正常工作。
为实现上述目的，本发明首先提供一种OLED显示面板，包括衬底基板、设于衬底基板上的遮光金属块、设于所述遮光金属块与衬底基板上的缓冲层、设于所述缓冲层上且对应于所述遮光金属块上方的主动层、设于所述主动层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极、主动层与缓冲层上的层间绝缘层、设于所述层间绝缘层上且对应于所述主动层两侧上方的第一过孔和第二过孔、设于所述层间绝缘层上且分别通过第一过孔和第二过孔与所述主动层两侧相接触的源极与漏极、设于源极、漏极与层间绝缘层上的钝化层、设于所述钝化层上且完全覆盖所述主动层的红色遮光色阻块、设于所述红色遮光色阻块与钝化层上的平坦层、设于所述钝化层上且对应于所述漏极上方的第三通孔、设于所述平坦层与 钝化层上且通过第三通孔与所述漏极相接触的第一电极、设于所述第一电极与钝化层上的像素定义层、设于像素定义层上且对应于所述第一电极上方的第四通孔、以及由下至上设于所述第四通孔内的OLED发光层和第二电极；
所述第一电极、OLED发光层及第二电极共同构成OLED器件；所述主动层的材料为铟镓锌氧化物。
所述红色遮光色阻块在主动层上方对应主动层的边缘向外延伸2-5μm，从而完全覆盖主动层。
所述OLED器件为底发射型OLED器件。
所述的OLED显示面板，还包括与所述红色遮光色阻块同层设置的且设于所述钝化层上的彩色滤光层；
所述OLED器件为发射白光的白光OLED器件。
所述栅极、源极及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述缓冲层、栅极绝缘层、层间绝缘层及钝化层的材料分别包括氧化硅与氮化硅中的一种或多种；所述第一电极的材料为透明导电金属氧化物。
本发明还提供一种OLED显示面板的制作方法，包括如下步骤：
步骤S1、提供一衬底基板，在所述衬底基板上沉积并图案化形成遮光金属块，在所述遮光金属块及衬底基板上沉积缓冲层，在所述缓冲层上沉积并图案化形成对应于所述遮光金属块上方的主动层，在所述主动层及缓冲层上依次沉积无机材料膜及第一金属层，对所述无机材料膜及第一金属层进行图案化处理，由无机材料膜得到位于所述主动层上的栅极绝缘层，由第一金属层得到位于所述栅极绝缘层上的栅极，所述栅极绝缘层与栅极露出所述主动层的两侧；
所述主动层的材料为铟镓锌氧化物；
步骤S2、在所述栅极、主动层及缓冲层上沉积层间绝缘层，在所述层间绝缘层上形成对应于所述主动层两侧上方的第一过孔和第二过孔，在所述层间绝缘层上沉积第二金属层，对所述第二金属层进行图案化处理，得到分别通过第一过孔和第二过孔与所述主动层两侧相接触的源极与漏极；
步骤S3、在所述源极、漏极及层间绝缘层上沉积钝化层，在所述钝化层上于所述主动层上方图案化形成完全覆盖所述主动层的红色遮光色阻块；
步骤S4、在所述红色遮光色阻块及钝化层上图案化形成平坦层，在所述钝化层上形成对应于所述漏极上方的第三通孔，在所述平坦层及钝化层上形成第一电极，所述第一电极经由所述第三通孔与所述漏极相接触，在 所述第一电极及钝化层上形成像素定义层，在所述像素定义层上形成对应于所述第一电极上方的第四通孔，在所述第四通孔内由下至上依次形成OLED发光层与第二电极；
所述第一电极、OLED发光层及第二电极共同构成OLED器件。
所述步骤S3中，所形成的红色遮光色阻块在主动层上方对应主动层的边缘向外延伸2-5μm，从而完全覆盖主动层。
所述OLED器件为底发射型OLED器件。
所述OLED器件为发射白光的白光OLED器件；
所述步骤S3还包括，在所述钝化层上图案化形成与所述红色遮光色阻块同层的彩色滤光层。
所述遮光金属块、主动层、栅极、源极、漏极及第一电极均采用物理气相沉积法沉积；所述缓冲层、栅极绝缘层、层间绝缘层及钝化层均采用等离子体化学气相沉积法沉积；
所述栅极、源极及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述缓冲层、栅极绝缘层、层间绝缘层及钝化层的材料分别包括氧化硅与氮化硅中的一种或多种；所述第一电极的材料为透明导电金属氧化物；
所述步骤S1还包括，以所述栅极与栅极绝缘层为遮挡层，对所述主动层进行等离子体处理以使其导体化；
所述步骤S1中，对所述无机材料膜及第一金属层进行图案化处理的具体过程为：采用湿法蚀刻对所述第一金属层进行蚀刻，得到对应于所述主动层上方的栅极，然后以所述栅极为遮挡层，采用干法蚀刻对所述无机材料膜进行蚀刻，得到与所述栅极相同形状的栅极绝缘层。
本发明还提供一种OLED显示面板，包括衬底基板、设于衬底基板上的遮光金属块、设于所述遮光金属块与衬底基板上的缓冲层、设于所述缓冲层上且对应于所述遮光金属块上方的主动层、设于所述主动层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极、主动层与缓冲层上的层间绝缘层、设于所述层间绝缘层上且对应于所述主动层两侧上方的第一过孔和第二过孔、设于所述层间绝缘层上且分别通过第一过孔和第二过孔与所述主动层两侧相接触的源极与漏极、设于源极、漏极与层间绝缘层上的钝化层、设于所述钝化层上且完全覆盖所述主动层的红色遮光色阻块、设于所述红色遮光色阻块与钝化层上的平坦层、设于所述钝化层上且对应于所述漏极上方的第三通孔、设于所述平坦层与钝化层上且通过第三通孔与所述漏极相接触的第一电极、设于所述第一电极与钝化层上的像素 定义层、设于像素定义层上且对应于所述第一电极上方的第四通孔、以及由下至上设于所述第四通孔内的OLED发光层和第二电极；
所述第一电极、OLED发光层及第二电极共同构成OLED器件；所述主动层的材料为铟镓锌氧化物；
其中，所述红色遮光色阻块在主动层上方对应主动层的边缘向外延伸2-5μm，从而完全覆盖主动层；
其中，所述OLED器件为底发射型OLED器件；
还包括与所述红色遮光色阻块同层设置的且设于所述钝化层上的彩色滤光层；
所述OLED器件为发射白光的白光OLED器件；
其中，所述栅极、源极及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述缓冲层、栅极绝缘层、层间绝缘层及钝化层的材料分别包括氧化硅与氮化硅中的一种或多种；所述第一电极的材料为透明导电金属氧化物。
本发明的有益效果：本发明的OLED显示面板及其制作方法，通过在IGZO TFT的上方设置完全覆盖主动层的红色遮光色阻块，可以减小从IGZO TFT顶部射入的高能量的蓝光对IGZO的主动层的影响，从而防止产生光漏电流，保证IGZO TFT的特性，维持IGZO TFT的正常工作，同时由于覆盖主动层的红色遮光色阻块只阻挡对IGZO TFT的主动层有影响的高能量的短波蓝光，而其他波段的光还是可以正常透过，因此不会影响OLED显示面板发光区的开口率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的OLED显示面板的制作方法的流程示意图；
图2为本发明的OLED显示面板的制作方法的步骤S1的示意图；
图3为本发明的OLED显示面板的制作方法的步骤S2的示意图；
图4为本发明的OLED显示面板的制作方法的步骤S3的示意图；
图5为本发明的OLED显示面板的制作方法的步骤S4的示意图暨本发 明的OLED显示面板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图5，本发明首先提供一种OLED显示面板，包括衬底基板10、设于衬底基板10上的遮光金属块21、设于所述遮光金属块21与衬底基板10上的缓冲层30、设于所述缓冲层30上且对应于所述遮光金属块21上方的主动层41、设于所述主动层41上的栅极绝缘层42、设于所述栅极绝缘层42上的栅极43、设于所述栅极43、主动层41与缓冲层30上的层间绝缘层44、设于所述层间绝缘层44上且对应于所述主动层41两侧上方的第一过孔441和第二过孔442、设于所述层间绝缘层44上且分别通过第一过孔441和第二过孔442与所述主动层41两侧相接触的源极45与漏极46、设于源极45、漏极46与层间绝缘层44上的钝化层51、设于所述钝化层51上且完全覆盖所述主动层41的红色遮光色阻块61、设于所述红色遮光色阻块61与钝化层51上的平坦层52、设于所述钝化层51上且对应于所述漏极46上方的第三通孔511、设于所述平坦层52与钝化层51上且通过第三通孔511与所述漏极46相接触的第一电极71、设于所述第一电极71与钝化层51上的像素定义层80、设于像素定义层80上且对应于所述第一电极71上方的第四通孔811、以及由下至上设于所述第四通孔811内的OLED发光层72和第二电极73；
所述第一电极71、OLED发光层72及第二电极73共同构成OLED器件70；所述主动层41的材料为铟镓锌氧化物(IGZO)，所述主动层41、栅极43、源极45及漏极46共同构成了薄膜晶体管，为IGZO TFT。
本发明的OLED显示面板，通过在IGZO TFT的上方设置完全覆盖主动层41的红色遮光色阻块61，可以减小从IGZO TFT顶部射入的高能量的蓝光对IGZO的主动层41的影响，从而防止产生光漏电流，保证IGZO TFT的特性，维持IGZO TFT的正常工作，同时由于覆盖主动层41的红色遮光色阻块61只阻挡对IGZO的主动层41有影响的高能量的短波蓝光，而其他波段的光还是可以正常透过，因此不会影响OLED显示面板发光区的开口率。
具体地，上述实施例中，所述TFT为驱动OLED器件70的驱动TFT，而对于OLED显示面板中的开关TFT(Switch TFT)，其同样可以采用上述方法在其上设置红色遮光色阻块61，以阻挡蓝光的照射，但由于OLED显 示面板通常对开关TFT的性能要求不高，也可以不在开关TFT上设置红色遮光色阻块61。
具体地，所述红色遮光色阻块61在主动层41上方对应主动层41的边缘向外延伸2-5μm，即所述红色遮光色阻块61上的每一侧边比所述主动层41上相应的侧边宽出2-5μm，从而完全覆盖主动层41。
具体地，所述OLED器件70为底发射型OLED器件。
具体地，所述OLED器件70为发射白光的白光OLED器件；所述的OLED显示面板，还包括与所述红色遮光色阻块61同层设置且设于所述钝化层51上的彩色滤光层62。
具体地，所述栅极43、源极45及漏极46的材料分别包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Gr)中的一种或多种；优选地，所述栅极43、源极45及漏极46的材料均为铜层与钼钛合金层的堆栈组合层(Cu+Mo-Ti)。
具体地，所述缓冲层30、栅极绝缘层42、层间绝缘层44及钝化层51的材料分别包括氧化硅(SiOx)与氮化硅(SiNx)中的一种或多种；优选地，所述缓冲层30、栅极绝缘层42、层间绝缘层44及钝化层51的材料均为氧化硅。
具体地，所述第一电极71、第二电极73分别作为OLED器件70的阳极及阴极，所述第一电极71的材料为透明导电金属氧化物；优选地，所述第一电极71的材料为氧化铟锡(ITO)。
具体地，所述遮光金属块21的材料为金属；优选的，所述遮光金属块21的材料为钼钛合金(Mo-Ti)。
请参阅图1，基于上述的OLED显示面板，本发明还提供一种OLED显示面板的制作方法，包括如下步骤：
步骤S1、如图2所示，提供一衬底基板10，在所述衬底基板10上沉积并图案化形成遮光金属块21，在所述遮光金属块21及衬底基板10上沉积缓冲层30，在所述缓冲层30上沉积并图案化形成对应于所述遮光金属块21上方的主动层41，在所述主动层41及缓冲层30上依次沉积无机材料膜及第一金属层，对所述无机材料膜及第一金属层进行图案化处理，由无机材料膜得到位于所述主动层41上的栅极绝缘层42，由第一金属层得到位于所述栅极绝缘层42上的栅极43，所述的栅极绝缘层42与栅极43露出所述主动层41的两侧；以所述栅极43与栅极绝缘层42为遮挡层，对所述主动层41进行等离子体处理以使其导体化。
具体地，所述主动层41的材料为铟镓锌氧化物。
具体地，所述步骤S1中，对所述无机材料膜及第一金属层进行图案化处理的具体过程为：采用湿法蚀刻对所述第一金属层进行蚀刻，得到对应于所述主动层41上方的栅极43，然后以所述栅极43为遮挡层，采用干法蚀刻对所述无机材料膜进行蚀刻，得到与所述栅极43相同形状的栅极绝缘层42。
步骤S2、如图3所示，在所述栅极43、主动层41及缓冲层30上沉积层间绝缘层44，在所述层间绝缘层44上形成对应于所述主动层41两侧上方的第一过孔441和第二过孔442，在所述层间绝缘层44上沉积第二金属层，对所述第二金属层进行图案化处理，得到分别通过第一过孔441和第二过孔442与所述主动层41两侧相接触的源极45与漏极46。
具体地，所述主动层41、栅极43、源极45及漏极46共同构成了TFT，为IGZO TFT。
步骤S3、如图4所示，在所述源极45、漏极46及层间绝缘层44上沉积钝化层51，在所述钝化层51上于所述主动层41上方图案化形成完全覆盖所述主动层41的红色遮光色阻块61。
具体地，所述步骤S3中，所形成的红色遮光色阻块61在主动层41上方对应主动层41的边缘向外延伸2-5μm，从而完全覆盖主动层41。
步骤S4、如图5所示，在所述红色遮光色阻块61及钝化层51上图案化形成平坦层52，在所述钝化层51上形成对应于所述漏极46上方的第三通孔511，在所述平坦层52及钝化层51上形成第一电极71，所述第一电极71经由所述第三通孔511与所述漏极46相接触，在所述第一电极71及钝化层51上形成像素定义层80，在所述像素定义层80上形成对应于所述第一电极71上方的第四通孔811，在所述第四通孔811内由下至上依次形成OLED发光层72与第二电极73；所述第一电极71、OLED发光层72及第二电极73共同构成OLED器件70，所述第一电极71、第二电极73分别作为OLED器件70的阳极及阴极。
本发明的OLED显示面板的制作方法，通过在IGZO TFT的上方设置完全覆盖主动层41的红色遮光色阻块61，可以减小从IGZO TFT顶部射入的高能量的蓝光对IGZO的主动层41的影响，从而防止产生光漏电流，保证IGZO TFT的特性，维持IGZO TFT的正常工作，同时由于覆盖主动层41的红色遮光色阻块61只阻挡对IGZO的主动层41有影响的高能量的短波蓝光，而其他波段的光还是可以正常透过，因此不会影响OLED显示面板发光区的开口率。
具体地，所述OLED器件70为底发射型OLED器件。
具体地，所述OLED器件70为发射白光的白光OLED器件；所述步骤S3还包括，在所述钝化层51上图案化形成与所述红色遮光色阻块61同层的彩色滤光层62。
具体地，所述遮光金属块21、主动层41、栅极43、源极45、漏极46及第一电极71均采用物理气相沉积法(Physical Vapor Deposition，PVD)沉积；所述缓冲层30、栅极绝缘层42、层间绝缘层44及钝化层51均采用等离子体化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition，PECVD)沉积。
具体地，所述栅极43、源极45及漏极46的材料分别包括钼、铝、铜、钛、铬中的一种或多种；优选地，所述栅极43、源极45及漏极46的材料均为铜层与钼钛合金层的堆栈组合层。
具体地，所述缓冲层30、栅极绝缘层42、层间绝缘层44及钝化层51的材料分别包括氧化硅与氮化硅中的一种或多种；优选地，所述缓冲层30、栅极绝缘层42、层间绝缘层44及钝化层51的材料均为氧化硅。
具体地，所述第一电极71的材料为透明导电金属氧化物；优选地，所述第一电极71的材料为氧化铟锡。
具体地，所述遮光金属块21的材料为金属；优选的，所述遮光金属块21的材料为钼钛合金(Mo-Ti)。
综上所述，本发明提供一种OLED显示板及其制作方法，通过在IGZO TFT的上方设置完全覆盖主动层的红色遮光色阻块，可以减小从IGZO TFT顶部射入的高能量的蓝光对IGZO的主动层的影响，从而防止产生光漏电流，保证IGZO TFT的特性，维持IGZO TFT的正常工作，同时由于覆盖主动层的红色遮光色阻块只阻挡对IGZO TFT的主动层有影响的高能量的短波蓝光，而其他波段的光还是可以正常透过，因此不会影响OLED显示面板发光区的开口率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种OLED显示面板，包括衬底基板、设于衬底基板上的遮光金属块、设于所述遮光金属块与衬底基板上的缓冲层、设于所述缓冲层上且对应于所述遮光金属块上方的主动层、设于所述主动层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极、主动层与缓冲层上的层间绝缘层、设于所述层间绝缘层上且对应于所述主动层两侧上方的第一过孔和第二过孔、设于所述层间绝缘层上且分别通过第一过孔和第二过孔与所述主动层两侧相接触的源极与漏极、设于源极、漏极与层间绝缘层上的钝化层、设于所述钝化层上且完全覆盖所述主动层的红色遮光色阻块、设于所述红色遮光色阻块与钝化层上的平坦层、设于所述钝化层上且对应于所述漏极上方的第三通孔、设于所述平坦层与钝化层上且通过第三通孔与所述漏极相接触的第一电极、设于所述第一电极与钝化层上的像素定义层、设于像素定义层上且对应于所述第一电极上方的第四通孔、以及由下至上设于所述第四通孔内的OLED发光层和第二电极；
    所述第一电极、OLED发光层及第二电极共同构成OLED器件；所述主动层的材料为铟镓锌氧化物。
  2. 如权利要求1所述的OLED显示面板，其中，所述红色遮光色阻块在主动层上方对应主动层的边缘向外延伸2-5μm，从而完全覆盖主动层。
  3. 如权利要求1所述的OLED显示面板，其中，所述OLED器件为底发射型OLED器件。
  4. 如权利要求3所述的OLED显示面板，还包括与所述红色遮光色阻块同层设置的且设于所述钝化层上的彩色滤光层；
    所述OLED器件为发射白光的白光OLED器件。
  5. 如权利要求1所述的OLED显示面板，其中，所述栅极、源极及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述缓冲层、栅极绝缘层、层间绝缘层及钝化层的材料分别包括氧化硅与氮化硅中的一种或多种；所述第一电极的材料为透明导电金属氧化物。
  6. 一种OLED显示面板的制作方法，包括如下步骤：
    步骤S1、提供一衬底基板，在所述衬底基板上沉积并图案化形成遮光金属块，在所述遮光金属块及衬底基板上沉积缓冲层，在所述缓冲层上沉积并图案化形成对应于所述遮光金属块上方的主动层，在所述主动层及缓冲层上依次沉积无机材料膜及第一金属层，对所述无机材料膜及第一金属 层进行图案化处理，由无机材料膜得到位于所述主动层上的栅极绝缘层，由第一金属层得到位于所述栅极绝缘层上的栅极，所述栅极绝缘层与栅极露出所述主动层的两侧；
    所述主动层的材料为铟镓锌氧化物；
    步骤S2、在所述栅极、主动层及缓冲层上沉积层间绝缘层，在所述层间绝缘层上形成对应于所述主动层两侧上方的第一过孔和第二过孔，在所述层间绝缘层上沉积第二金属层，对所述第二金属层进行图案化处理，得到分别通过第一过孔和第二过孔与所述主动层两侧相接触的源极与漏极；
    步骤S3、在所述源极、漏极及层间绝缘层上沉积钝化层，在所述钝化层上于所述主动层上方图案化形成完全覆盖所述主动层的红色遮光色阻块；
    步骤S4、在所述红色遮光色阻块及钝化层上图案化形成平坦层，在所述钝化层上形成对应于所述漏极上方的第三通孔，在所述平坦层及钝化层上形成第一电极，所述第一电极经由所述第三通孔与所述漏极相接触，在所述第一电极及钝化层上形成像素定义层，在所述像素定义层上形成对应于所述第一电极上方的第四通孔，在所述第四通孔内由下至上依次形成OLED发光层与第二电极；
    所述第一电极、OLED发光层及第二电极共同构成OLED器件。
  7. 如权利要求6所述的OLED显示面板的制作方法，其中，所述步骤S3中，所形成的红色遮光色阻块在主动层上方对应主动层的边缘向外延伸2-5μm，从而完全覆盖主动层。
  8. 如权利要求6所述的OLED显示面板的制作方法，其中，所述OLED器件为底发射型OLED器件。
  9. 如权利要求8所述的OLED显示面板的制作方法，其中，所述OLED器件为发射白光的白光OLED器件；
    所述步骤S3还包括，在所述钝化层上图案化形成与所述红色遮光色阻块同层的彩色滤光层。
  10. 如权利要求6所述的OLED显示面板的制作方法，其中，所述遮光金属块、主动层、栅极、源极、漏极及第一电极均采用物理气相沉积法沉积；所述缓冲层、栅极绝缘层、层间绝缘层及钝化层均采用等离子体化学气相沉积法沉积；
    所述栅极、源极及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述缓冲层、栅极绝缘层、层间绝缘层及钝化层的材料分别包括氧化硅与氮化硅中的一种或多种；所述第一电极的材料为透明导电金属氧化物；
    所述步骤S1还包括，以所述栅极与栅极绝缘层为遮挡层，对所述主动层进行等离子体处理以使其导体化；
    所述步骤S1中，对所述无机材料膜、及第一金属层进行图案化处理的具体过程为：采用湿法蚀刻对所述第一金属层进行蚀刻，得到对应于所述主动层上方的栅极，然后以所述栅极为遮挡层，采用干法蚀刻对所述无机材料膜进行蚀刻，得到与所述栅极相同形状的栅极绝缘层。
  11. 一种OLED显示面板，包括衬底基板、设于衬底基板上的遮光金属块、设于所述遮光金属块与衬底基板上的缓冲层、设于所述缓冲层上且对应于所述遮光金属块上方的主动层、设于所述主动层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极、主动层与缓冲层上的层间绝缘层、设于所述层间绝缘层上且对应于所述主动层两侧上方的第一过孔和第二过孔、设于所述层间绝缘层上且分别通过第一过孔和第二过孔与所述主动层两侧相接触的源极与漏极、设于源极、漏极与层间绝缘层上的钝化层、设于所述钝化层上且完全覆盖所述主动层的红色遮光色阻块、设于所述红色遮光色阻块与钝化层上的平坦层、设于所述钝化层上且对应于所述漏极上方的第三通孔、设于所述平坦层与钝化层上且通过第三通孔与所述漏极相接触的第一电极、设于所述第一电极与钝化层上的像素定义层、设于像素定义层上且对应于所述第一电极上方的第四通孔、以及由下至上设于所述第四通孔内的OLED发光层和第二电极；
    所述第一电极、OLED发光层及第二电极共同构成OLED器件；所述主动层的材料为铟镓锌氧化物；
    其中，所述红色遮光色阻块在主动层上方对应主动层的边缘向外延伸2-5μm，从而完全覆盖主动层；
    其中，所述OLED器件为底发射型OLED器件；
    还包括与所述红色遮光色阻块同层设置的且设于所述钝化层上的彩色滤光层；
    所述OLED器件为发射白光的白光OLED器件；
    其中，所述栅极、源极及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述缓冲层、栅极绝缘层、层间绝缘层及钝化层的材料分别包括氧化硅与氮化硅中的一种或多种；所述第一电极的材料为透明导电金属氧化物。
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