CN105633016B - Tft基板的制作方法及制得的tft基板 - Google Patents

Tft基板的制作方法及制得的tft基板 Download PDF

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Publication number
CN105633016B
CN105633016B CN201610194250.2A CN201610194250A CN105633016B CN 105633016 B CN105633016 B CN 105633016B CN 201610194250 A CN201610194250 A CN 201610194250A CN 105633016 B CN105633016 B CN 105633016B
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layer
light shield
oxide semiconductor
tft substrate
photoresist
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CN105633016A (zh
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葛世民
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201610194250.2A priority Critical patent/CN105633016B/zh
Priority to US15/125,191 priority patent/US10120247B2/en
Priority to PCT/CN2016/079805 priority patent/WO2017166341A1/zh
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    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
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    • H01L27/1259—Multistep manufacturing methods
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Abstract

本发明提供一种TFT基板的制作方法及制得的TFT基板。本发明的TFT基板的制作方法，利用透明金属氧化物导体材料可见光透过率较高的特点以及将透明金属氧化物半导体掺杂处理成透明金属氧化物导体的方法，同时形成有源层与像素电极，能够达到减少光罩次数，提高生产效率和降低生产成本的目的；此外，仅采用一道半透光罩曝光、刻蚀形成公共电极以及遮光层和透明导电层形成的叠层遮光层，可进一步减少光罩次数，通过TFT下方设置遮光层，避免了TFT电性稳定性受到光照的影响。本发明的TFT基板，制程简单，生产成本低，且TFT下方设有遮光层，避免了TFT电性稳定性受到光照的影响。

Description

TFT基板的制作方法及制得的TFT基板
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板的制作方法及制得的TFT基板。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜(CF，Color Filter)基板、薄膜晶体管(TFT，Thin FilmTransistor)基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
有源矩阵驱动的LCD显示技术利用了液晶的双极性偏振特点，通过施加电场控制液晶分子的排列方向，实现对背光源光路行进方向的开关作用。根据对液晶分子施加电场方向的不同，可以将LCD显示模式分为扭曲向列(Twisted Nematic，TN)，垂直配向(Vertical Alignment，VA)及平面转换(In-Plane Switching，IPS)系列模式。VA系列模式指对液晶分子施加纵向电场，而IPS系列模式指对液晶分子施加横向电场。而在IPS系列模式中，对于施加横向电场的不同，又可分为IPS模式和边缘场开关(Fringe FieldSwitching，FFS)模式等。其中FFS显示模式的每一个像素单元含有上下两层电极，即像素电极和公共电极，且下层的公共电极采用开口区整面平铺的方式。FFS显示模式具有高透过率，广视角以及较低的色偏等优点，是一种广泛应用的LCD显示技术。
随着大尺寸和高PPI(Pixels Per Inch，每英寸所拥有的像素数目)以及高刷新频率产品的开发，铟镓锌氧化物(IGZO)为代表的氧化物半导体由于具有较高的迁移率受到了广泛的重视和应用。顶栅共面型TFT结构可以通过自对准的工艺使得栅电极与源漏电极的寄生电容大大减小，从而改善电阻电容延迟(RC Delay)。此外，顶栅共面型TFT结构的半导体沟道长度也可以做的较短，因而适用于高PPI的开发应用。由于顶栅共面型TFT的沟道易受到下方光照的影响，因而TFT电性的稳定性会劣化，因此该区域需要增加遮光层。然而，传统的FFS显示模式阵列基板制造方法需要较多的光罩次数，工艺比较复杂，生产成本较高。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，能够减少光罩数量、提高生产效率、降低生产成本。
本发明的目的还在于提供一种TFT基板，制程简单，生产成本低，且电学性能优异。
为实现上述目的，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤1、提供一基板，在所述基板上依次沉积透明导电膜和遮光膜；
步骤2、采用一道半透光罩对所述透明导电膜与遮光膜进行图形化处理，得到位于基板上且间隔设置的透明导电层与公共电极、以及位于透明导电层上方与其宽度相等且两端对齐的遮光层；
步骤3、在所述遮光层、公共电极、及基板上沉积缓冲层，在所述缓冲层上依次沉积氧化物半导体层、绝缘层、及栅极金属层；
步骤4、采用一道光罩对所述栅极金属层与绝缘层进行图形化处理，得到宽度相等且两端对齐的栅极及栅极绝缘层；
以所述栅极与栅极绝缘层为遮蔽层，对所述氧化物半导体层进行离子掺杂，将所述氧化物半导体层上未被所述栅极及栅极绝缘层覆盖的区域转化为氧化物导体；
步骤5、采用一道光罩对所述氧化物半导体层进行图形化处理，形成有源层以及与有源层相连的像素电极；
所述有源层包括对应于所述栅极下方的沟道区、位于所述沟道区一侧的漏极接触区、位于所述沟道另一侧且与像素电极相连的连接区；其中，所述有源层的沟道区为氧化物半导体材料，所述有源层的漏极接触区与连接区、以及像素电极为氧化物导体材料；
步骤6、在所述栅极、有源层、及缓冲层上沉积第一钝化层，采用一道光罩对该第一钝化层进行图形化处理，在所述第一钝化层上形成对应于所述漏极接触区的通孔；
步骤7、在所述第一钝化层上沉积漏极金属层，采用一道光罩对该漏极金属层进行图形化处理，得到漏极，所述漏极通过通孔与所述有源层的漏极接触区相接触，在所述漏极、及第一钝化层上沉积第二钝化层，完成TFT基板的制作。
所述步骤2包括：
步骤21、在所述遮光膜上涂布一光阻层，采用一半透光罩对所述光阻层进行图形化处理，得到间隔设置的第一光阻段与第二光阻段；所述第一光阻段的厚度大于所述第二光阻段的厚度；
步骤22、以所述第一光阻段与第二光阻段为阻挡层，对所述透明导电膜与遮光膜进行蚀刻，得到对应于所述第一光阻段下方的遮光层与透明导电层、以及对应于所述第二光阻段下方的遮光段与公共电极；
步骤23、对所述第一光阻段与第二光阻段进行灰化处理，薄化第一光阻段并去除第二光阻段；
步骤24、以第一光阻段为阻挡层，对所述遮光段进行蚀刻，去除该遮光段；
步骤25、将剩余的第一光阻段剥离去除。
所述步骤2中，所述半透光罩为灰阶光罩、半色调光罩、或者单缝光罩。
所述步骤4中，对所述氧化物半导体层进行离子掺杂的方式为等离子体处理。
所述步骤5中，所述氧化物半导体材料为透明金属氧化物半导体材料，所述氧化物导体材料为离子掺杂的透明金属氧化物半导体材料。
本发明还提供一种TFT基板，包括基板、设于基板上且间隔设置的透明导电层与公共电极、设于透明导电层上方与其宽度相等且两端对齐的遮光层、设于所述遮光层、公共电极、及基板上的缓冲层、设于所述缓冲层上的有源层与像素电极、设于所述有源层上的栅极绝缘层、设于所述栅极绝缘层上方与其宽度相等且两端对齐的栅极、设于所述栅极、有源层、像素电极、及缓冲层上的第一钝化层、设于所述第一钝化层上的漏极、设于所述漏极与第一钝化层上的第二钝化层；
所述有源层包括对应于所述栅极下方的沟道区、位于所述沟道区一侧的漏极接触区、位于所述沟道区另一侧且与像素电极相连的连接区；其中，所述有源层的沟道区为氧化物半导体材料，所述有源层的漏极接触区与连接区、以及像素电极为氧化物导体材料；
所述第一钝化层上设有对应于所述漏极接触区的通孔，所述漏极通过通孔与所述有源层的漏极接触区相接触。
所述氧化物半导体材料为透明金属氧化物半导体材料，所述氧化物导体材料为离子掺杂的透明金属氧化物半导体材料。
所述透明金属氧化物半导体材料为非晶铟镓锌氧化物。
所述透明导电层与公共电极的材料为透明导电金属氧化物。
所述缓冲层为高透过率的绝缘膜。
本发明的有益效果：本发明提供的一种TFT基板的制作方法，利用透明金属氧化物导体材料可见光透过率较高的特点以及将透明金属氧化物半导体掺杂处理成透明金属氧化物导体的方法，同时形成有源层与像素电极，能够达到减少光罩次数，提高生产效率和降低生产成本的目的；此外，仅采用一道半透光罩曝光、刻蚀形成公共电极以及遮光层和透明导电层形成的叠层遮光层，可进一步减少光罩次数，通过TFT下方设置遮光层，避免了TFT电性稳定性受到光照的影响。本发明提供的一种TFT基板，利用透明金属氧化物半导体材料和掺杂的透明金属氧化物半导体材料来制备有源层和像素电极，制程简单，生产成本低，且TFT下方设有遮光层，避免了TFT电性稳定性受到光照的影响。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的TFT基板的制作方法的示意流程图；
图2为本发明的TFT基板的制作方法的步骤1的示意图；
图3-7为本发明的TFT基板的制作方法的步骤2的示意图；
图8为本发明的TFT基板的制作方法的步骤3的示意图；
图9-12为本发明的TFT基板的制作方法的步骤4的示意图；
图13为本发明的TFT基板的制作方法的步骤5的示意图；
图14为本发明的TFT基板的制作方法的步骤6的示意图；
图15-16为本发明的TFT基板的制作方法的步骤7中形成漏极的示意图；
图17为本发明的TFT基板的制作方法的步骤7中形成第二钝化层的示意图暨本发明的TFT基板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤1、如图2所示，提供一基板10，在所述基板10上依次沉积透明导电膜11和遮光膜12。
具体的，所述基板10为透明基板，优选为玻璃基板。
具体的，所述步骤1中，在所述基板10上沉积透明导电膜11之前，需要将基板10清洗干净。
具体的，所述透明导电膜11的材料为透明导电金属氧化物，如铟锡氧化物(ITO)、铟锌氧化物(IZO)、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种的堆叠层。优选的，所述透明导电膜11的材料为铟锡氧化物。
具体的，所述遮光膜12的材料为金属，优选为钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的堆栈组合。
步骤2、如图3-7所示，采用一道半透光罩15对所述透明导电膜11与遮光膜12进行图形化处理，得到位于基板10上且间隔设置的透明导电层21与公共电极22、以及位于透明导电层21上方与其宽度相等且两端对齐的遮光层30。
具体的，所述步骤2包括：
步骤21、如图3-4所示，在所述遮光膜12上涂布一光阻层14，采用一半透光罩15对所述光阻层15进行图形化处理，得到间隔设置的第一光阻段16与第二光阻段17；所述第一光阻段16的厚度大于所述第二光阻段17的厚度；
步骤22、如图5所示，以所述第一光阻段16与第二光阻段17为阻挡层，对所述透明导电膜11与遮光膜12进行蚀刻，得到对应于所述第一光阻段16下方的遮光层30与透明导电层21、以及对应于所述第二光阻段17下方的遮光段31与公共电极22；
步骤23、如图6所示，对所述第一光阻段16与第二光阻段17进行灰化处理，薄化第一光阻段16并去除第二光阻段17；
步骤24、如图7所示，以第一光阻段16为阻挡层，对所述遮光段31进行蚀刻，去除该遮光段31；
步骤25、如图8所示，将剩余的第一光阻段16剥离去除。
具体的，所述步骤21中，所述第一光阻段16的厚度为1.5～3μm，所述第二光阻段17的厚度0.15～1μm。
具体的，所述半透光罩15上设有对应于第一光阻段16的不透光区域151、对应于第二光阻段17的半透光区域152、以及除不透光区域151与半透光区域152以外的全透光区域153。所述光阻层14的材料为正型光阻。
进一步的，所述半透光罩15可以为灰阶光罩(Gray Tone Mask，GTM)、半色调光罩(Half Tone Mask，HTM)、或者单缝光罩(Single Slit Mask，SSM)。
具体的，所述步骤23中，采用氧气对所述第一光阻段16与第二光阻段17进行灰化处理。
步骤3、如图9所示，在所述遮光层30、公共电极22、及基板10上沉积缓冲层40，在所述缓冲层40上依次沉积氧化物半导体层41、绝缘层42、及栅极金属层43。
优选的，所述缓冲层40为高透过率的绝缘膜，具体的，所述绝缘膜为氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述氧化物半导体层41的材料为透明金属氧化物半导体材料，优选为非晶铟镓锌氧化物(IGZO)，所述氧化物半导体层41利用溅射设备在室温下沉积得到。
具体的，所述绝缘层42为氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述栅极金属层43的材料可以是钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的一种或多种的堆栈组合。
步骤4、如图10-12所示，采用一道光罩对所述栅极金属层43与绝缘层42进行图形化处理，得到宽度相等且两端对齐的栅极50及栅极绝缘层60；
以所述栅极50与栅极绝缘层60为遮蔽层，对所述氧化物半导体层41进行离子掺杂，将所述氧化物半导体层41上未被所述栅极50及栅极绝缘层60覆盖的区域转化为氧化物导体。
具体的，所述步骤4中，对所述氧化物半导体层41进行离子掺杂的方式为等离子体处理。具体的，所述等离子体可以为氢气、氨气、或者氩气的等离子体。
步骤5、如图13所示，采用一道光罩对所述氧化物半导体层41进行图形化处理，形成有源层70以及与有源层70相连的像素电极80；
所述有源层70包括对应于所述栅极50下方的沟道区71、位于所述沟道区71一侧的漏极接触区72、位于所述沟道71另一侧且与像素电极80相连的连接区73；其中，所述有源层70的沟道区71为氧化物半导体材料，所述有源层70的漏极接触区72与连接区73、以及像素电极80为氧化物导体材料。
具体的，所述氧化物半导体材料为透明金属氧化物半导体材料，所述氧化物导体材料为离子掺杂的透明金属氧化物半导体材料。优选的，所述透明金属氧化物半导体材料为非晶铟镓锌氧化物(IGZO)。
本发明通过步骤4和步骤5得到位于同一层的有源层70与像素电极80，所述像素电极80与有源层70直接相连，中间不需要设置源极，从而简化了生产工艺，降低了生产成本。
步骤6、如图14所示，在所述栅极50、有源层70、及缓冲层40上沉积第一钝化层90，采用一道光罩对该第一钝化层90进行图形化处理，在所述第一钝化层90上形成对应于所述漏极接触区72的通孔91。
具体的，所述第一钝化层90为氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
步骤7、如图15-17所示，在所述第一钝化层90上沉积漏极金属层95，采用一道光罩对该漏极金属层95进行图形化处理，得到漏极96，所述漏极96通过通孔91与所述有源层70的漏极接触区72相接触，在所述漏极96、及第一钝化层90上沉积第二钝化层98，完成TFT基板的制作。
具体的，所述漏极金属层95的材料可以是钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的一种或多种的堆栈组合。
具体的，所述第二钝化层98为氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
上述TFT基板的制作方法，利用透明金属氧化物导体材料可见光透过率较高的特点，以及将透明金属氧化物半导体掺杂处理成透明金属氧化物导体的方法，同时形成有源层与像素电极，能够达到减少光罩次数，提高生产效率和降低生产成本的目的。此外，仅采用一道半透光罩曝光、刻蚀形成公共电极以及遮光层和透明导电层形成的叠层遮光层，可进一步减少光罩次数。通过TFT下方设置遮光层，避免了TFT电性稳定性受到光照的影响。
请参阅图17，本发明还提供一种TFT基板，包括基板10、设于基板10上且间隔设置的透明导电层21与公共电极22、设于透明导电层21上方与其宽度相等且两端对齐的遮光层30、设于所述遮光层30、公共电极22、及基板10上的缓冲层40、设于所述缓冲层40上的有源层70与像素电极80、设于所述有源层70上的栅极绝缘层60、设于所述栅极绝缘层60上方与其宽度相等且两端对齐的栅极50、设于所述栅极50、有源层70、像素电极80、及缓冲层40上的第一钝化层90、设于所述第一钝化层90上的漏极96、设于所述漏极96与第一钝化层90上的第二钝化层98。
所述有源层70包括对应于所述栅极50下方的沟道区71、位于所述沟道区71一侧的漏极接触区72、位于所述沟道区71另一侧且与像素电极80相连的连接区73；其中，所述有源层70的沟道区71为氧化物半导体材料，所述有源层70的漏极接触区72与连接区73、以及像素电极80为氧化物导体材料。
所述第一钝化层90上设有对应于所述漏极接触区72的通孔91，所述漏极96通过通孔91与所述有源层70的漏极接触区72相接触。
具体的，所述氧化物半导体材料为透明金属氧化物半导体材料，所述氧化物导体材料为离子掺杂的透明金属氧化物半导体材料。优选的，所述透明金属氧化物半导体材料为非晶铟镓锌氧化物(IGZO)。
具体的，所述基板10为透明基板，优选为玻璃基板。
具体的，所述透明导电层21与公共电极22的材料为透明导电金属氧化物，如铟锡氧化物(ITO)、铟锌氧化物(IZO)、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种的堆叠层。优选的，所述透明导电层21与公共电极22的材料为铟锡氧化物。
具体的，所述遮光层30的材料为金属，优选为钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的堆栈组合。
优选的，所述缓冲层40为高透过率的绝缘膜，具体的，所述绝缘膜为氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的，所述栅极50与漏极96的材料可以是钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的一种或多种的堆栈组合。
具体的，所述栅极绝缘层60、第一钝化层90、及第二钝化层98为氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
上述TFT基板，利用透明金属氧化物半导体材料和掺杂的透明金属氧化物半导体材料来制备有源层和像素电极，制程简单，生产成本低，且TFT下方设有遮光层，避免了TFT电性稳定性受到光照的影响。
综上所述，本发明提供的一种TFT基板的制作方法，利用透明金属氧化物导体材料可见光透过率较高的特点以及将透明金属氧化物半导体掺杂处理成透明金属氧化物导体的方法，同时形成有源层与像素电极，能够达到减少光罩次数，提高生产效率和降低生产成本的目的；此外，仅采用一道半透光罩曝光、刻蚀形成公共电极以及遮光层和透明导电层形成的叠层遮光层，可进一步减少光罩次数，通过TFT下方设置遮光层，避免了TFT电性稳定性受到光照的影响。本发明提供的一种TFT基板，利用透明金属氧化物半导体材料和掺杂的透明金属氧化物半导体材料来制备有源层和像素电极，制程简单，生产成本低，且TFT下方设有遮光层，避免了TFT电性稳定性受到光照的影响。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一基板(10)，在所述基板(10)上依次沉积透明导电膜(11)和遮光膜(12)；
步骤2、采用一道半透光罩(15)对所述透明导电膜(11)与遮光膜(12)进行图形化处理，得到位于基板(10)上且间隔设置的透明导电层(21)与公共电极(22)、以及位于透明导电层(21)上方与其宽度相等且两端对齐的遮光层(30)；
步骤3、在所述遮光层(30)、公共电极(22)、及基板(10)上沉积缓冲层(40)，在所述缓冲层(40)上依次沉积氧化物半导体层(41)、绝缘层(42)、及栅极金属层(43)；
步骤4、采用一道光罩对所述栅极金属层(43)与绝缘层(42)进行图形化处理，得到宽度相等且两端对齐的栅极(50)及栅极绝缘层(60)；
以所述栅极(50)与栅极绝缘层(60)为遮蔽层，对所述氧化物半导体层(41)进行离子掺杂，将所述氧化物半导体层(41)上未被所述栅极(50)及栅极绝缘层(60)覆盖的区域转化为氧化物导体；
步骤5、采用一道光罩对所述氧化物半导体层(41)进行图形化处理，形成有源层(70)以及与有源层(70)相连的像素电极(80)；
所述有源层(70)包括对应于所述栅极(50)下方的沟道区(71)、位于所述沟道区(71)一侧的漏极接触区(72)、位于所述沟道(71)另一侧且与像素电极(80)相连的连接区(73)；其中，所述有源层(70)的沟道区(71)为氧化物半导体材料，所述有源层(70)的漏极接触区(72)与连接区(73)、以及像素电极(80)为氧化物导体材料；
所述氧化物半导体材料为透明金属氧化物半导体材料，所述氧化物导体材料为离子掺杂的透明金属氧化物半导体材料；
步骤6、在所述栅极(50)、有源层(70)、及缓冲层(40)上沉积第一钝化层(90)，采用一道光罩对该第一钝化层(90)进行图形化处理，在所述第一钝化层(90)上形成对应于所述漏极接触区(72)的通孔(91)；
步骤7、在所述第一钝化层(90)上沉积漏极金属层(95)，采用一道光罩对该漏极金属层(95)进行图形化处理，得到漏极(96)，所述漏极(96)通过通孔(91)与所述有源层(70)的漏极接触区(72)相接触，在所述漏极(96)、及第一钝化层(90)上沉积第二钝化层(98)，完成TFT基板的制作。
2.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤2包括：
步骤21、在所述遮光膜(12)上涂布一光阻层(14)，采用一半透光罩(15)对所述光阻层(14 )进行图形化处理，得到间隔设置的第一光阻段(16)与第二光阻段(17)；所述第一光阻段(16)的厚度大于所述第二光阻段(17)的厚度；
步骤22、以所述第一光阻段(16)与第二光阻段(17)为阻挡层，对所述透明导电膜(11)与遮光膜(12)进行蚀刻，得到对应于所述第一光阻段(16)下方的遮光层(30)与透明导电层(21)、以及对应于所述第二光阻段(17)下方的遮光段(31)与公共电极(22)；
步骤23、对所述第一光阻段(16)与第二光阻段(17)进行灰化处理，薄化第一光阻段(16)并去除第二光阻段(17)；
步骤24、以第一光阻段(16)为阻挡层，对所述遮光段(31)进行蚀刻，去除该遮光段(31)；
步骤25、将剩余的第一光阻段(16)剥离去除。
3.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤2中，所述半透光罩(15)为灰阶光罩、半色调光罩、或者单缝光罩。
4.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤4中，对所述氧化物半导体层(41)进行离子掺杂的方式为等离子体处理。
5.一种TFT基板，其特征在于，包括基板(10)、设于基板(10)上且间隔设置的透明导电层(21)与公共电极(22)、设于透明导电层(21)上方与其宽度相等且两端对齐的遮光层(30)、设于所述遮光层(30)、公共电极(22)、及基板(10)上的缓冲层(40)、设于所述缓冲层(40)上的有源层(70)与像素电极(80)、设于所述有源层(70)上的栅极绝缘层(60)、设于所述栅极绝缘层(60)上方与其宽度相等且两端对齐的栅极(50)、设于所述栅极(50)、有源层(70)、像素电极(80)、及缓冲层(40)上的第一钝化层(90)、设于所述第一钝化层(90)上的漏极(96)、设于所述漏极(96)与第一钝化层(90)上的第二钝化层(98)；
所述有源层(70)包括对应于所述栅极(50)下方的沟道区(71)、位于所述沟道区(71)一侧的漏极接触区(72)、位于所述沟道区(71)另一侧且与像素电极(80)相连的连接区(73)；其中，所述有源层(70)的沟道区(71)为氧化物半导体材料，所述有源层(70)的漏极接触区(72)与连接区(73)、以及像素电极(80)为氧化物导体材料；
所述第一钝化层(90)上设有对应于所述漏极接触区(72)的通孔(91)，所述漏极(96)通过通孔(91)与所述有源层(70)的漏极接触区(72)相接触；
所述氧化物半导体材料为透明金属氧化物半导体材料，所述氧化物导体材料为离子掺杂的透明金属氧化物半导体材料。
6.如权利要求5所述的TFT基板，其特征在于，所述透明金属氧化物半导体材料为非晶铟镓锌氧化物。
7.如权利要求5所述的TFT基板，其特征在于，所述透明导电层(21)与公共电极(22)的材料为透明导电金属氧化物。
8.如权利要求5所述的TFT基板，其特征在于，所述缓冲层(40)为高透过率的绝缘膜。
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