JP2018128521A - 表示装置、および、表示装置の製造方法 - Google Patents
表示装置、および、表示装置の製造方法 Download PDFInfo
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- JP2018128521A JP2018128521A JP2017020192A JP2017020192A JP2018128521A JP 2018128521 A JP2018128521 A JP 2018128521A JP 2017020192 A JP2017020192 A JP 2017020192A JP 2017020192 A JP2017020192 A JP 2017020192A JP 2018128521 A JP2018128521 A JP 2018128521A
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- oxide semiconductor
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
Abstract
【解決手段】表示装置500は、表示領域Rgdと非表示領域Rgxとの境界を跨ぐように設けられる対向電極CE1を備える。対向電極CE1は、画素電極GE1と共同して映像を表示するために使用される部材である。対向電極CE1のうち、表示領域Rgdに存在する部分は、導体部CEeである。導体部CEeは、酸化物半導体膜の一部が変化したものである。
【選択図】図5
Description
図1は、本発明の実施の形態1に係る表示装置500の断面図である。表示装置500は、一例として、アクティブマトリクス型の液晶表示装置である。また、表示装置500は、一例として、FFS(Fringe Field Switching)モードの液晶表示装置である。なお、表示装置500は、FFSモードに限定されず、ノーマリーブラックモードに適用可能な他のモードの液晶表示装置であってもよい。
次に、表示装置500の製造方法(以下、「製造方法A」とも称する)について説明する。なお、ここでは、主に、表示装置500の主要部分である表示パネル100の製造方法について、図8のフローチャートにしたがって説明する。なお、図8は、製造方法Aの主要な工程のみを示す。図9、図10、図11および図12は、本発明の実施の形態1に係る表示装置500(表示パネル100)の製造方法Aを説明するための図である。
本実施の形態の変形例の構成は、実施の形態1の製造方法において、一部の工程の順番を変更した構成(以下、「構成Ct2」ともいう)である。構成Ct2における表示装置は、実施の形態1の表示装置500である。以下においては、構成Ct2における表示装置500の製造方法を、「製造方法B」とも称する。製造方法Bは、実施の形態1の製造方法Aと比較して、図11(c)の構成を生成するための工程よりも後の工程が異なる。製造方法Bのそれ以外の工程は、製造方法Aと同様なので詳細な説明は繰り返さない。以下、製造方法Bについて、製造方法Aと異なる工程を説明する。
Claims (7)
- 映像を表示するための非矩形の表示領域と、当該表示領域の周辺に設けられている非表示領域とを有する表示装置であって、
電極と、
前記表示領域と前記非表示領域との境界を跨ぐように設けられる部材とを備え、
前記部材は、前記電極と共同して前記映像を表示するために使用される部材であり、
前記部材のうち、前記表示領域に存在する部分は、導体であり、
前記導体は、酸化物半導体膜の一部が変化したものである
表示装置。 - 前記部材のうち、前記非表示領域に存在する部分は、絶縁体であり、
前記絶縁体は、前記酸化物半導体膜の別の一部が変化したものである
請求項1に記載の表示装置。 - 前記部材は、前記電極の上方または下方に設けられる
請求項1または2に記載の表示装置。 - 前記部材と前記電極との間には、SiO膜が設けられている
請求項1から3のいずれか1項に記載の表示装置。 - 前記酸化物半導体膜を構成する材料は、InGaZnO、InZnO、InGaO、InSnO、InSnZnO、InGaZnSnO、InAlZnO、InHfZnO、InZrZnO、InMgZnOおよびInYZnOのいずれかである
請求項1から4のいずれか1項に記載の表示装置。 - 映像を表示するための非矩形の表示領域と、当該表示領域の周辺に設けられている非表示領域とを有する表示装置の製造方法であって、
電極を形成する工程と、
前記表示領域と前記非表示領域との境界を跨ぐように設けられる酸化物半導体膜を形成する工程と、
前記酸化物半導体膜のうち、前記表示領域に形成するための部分を導体に変化させるための処理を行う工程とを含み、
前記導体は、前記電極と共同して前記映像を表示するために使用される部材である
表示装置の製造方法。 - 前記表示装置の製造方法は、さらに、
前記酸化物半導体膜のうち、前記非表示領域に形成するための部分を絶縁体に変化させるための処理を行う工程を含む
請求項6に記載の表示装置の製造方法。
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JP2016085448A (ja) * | 2014-10-27 | 2016-05-19 | 群創光電股▲ふん▼有限公司Innolux Corporation | 表示パネル |
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