WO2020033081A1 - Gas abatement apparatus - Google Patents

Gas abatement apparatus Download PDF

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Publication number
WO2020033081A1
WO2020033081A1 PCT/US2019/040195 US2019040195W WO2020033081A1 WO 2020033081 A1 WO2020033081 A1 WO 2020033081A1 US 2019040195 W US2019040195 W US 2019040195W WO 2020033081 A1 WO2020033081 A1 WO 2020033081A1
Authority
WO
WIPO (PCT)
Prior art keywords
port
muffler
volume
conduit
valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2019/040195
Other languages
English (en)
French (fr)
Inventor
Adib Khan
Qiwei Liang
Sultan Malik
Srinivas Nemani
Rafika Smati
Joseph NG
John O'hehir
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020217006817A priority Critical patent/KR102724302B1/ko
Priority to CN201980054661.3A priority patent/CN112640074B/zh
Priority to JP2021505979A priority patent/JP7510406B2/ja
Publication of WO2020033081A1 publication Critical patent/WO2020033081A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B01D53/0407—Constructional details of adsorbing systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/02—Other waste gases
    • B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing

Definitions

  • Embodiments of the present disclosure generally relate to apparatus for semiconductor processing. More specifically, embodiments of the disclosure relate to gas abatement apparatus for high pressure processing systems.
  • the field of semiconductor manufacturing utilizes various processes to fabricate devices which are incorporated into integrated circuits. As device complexity increases, integrated circuit manufacturers look for improved methodologies to fabricate advanced node devices. For example, advanced processing characteristics may include the utilization of more extreme process variables to enable advanced device fabrication.
  • a muffler assembly apparatus includes a first muffler defining a first volume therein, the first muffler having a first port formed in a first end and a second port formed in a second end opposite the first port.
  • a second muffler defines a second volume therein.
  • the second muffler has a third port formed in a third end and a fourth port formed in the second muffler substantially opposite the third port.
  • a third muffler defines a third volume therein.
  • the third muffler has a fifth port formed therein and a sixth port formed therein substantially opposite the fifth port.
  • a fourth muffler defines a fourth volume therein.
  • the fourth muffler has a seventh port formed therein and an eighth port formed through a fourth end substantially opposite the seventh port.
  • a first conduit extends between the seventh port and the fifth port and a second conduit extends between the fourth port and the sixth port.
  • an effluent management apparatus in another embodiment, includes a muffler assembly which includes a first muffler defining a first volume therein, the first muffler having a first port formed in a first end and a second port formed in a second end opposite the first port.
  • a second muffler defines a second volume therein.
  • the second muffler has a third port formed in a third end and a fourth port formed in the second muffler substantially opposite the third port.
  • a third muffler defines a third volume therein.
  • the third muffler has a fifth port formed therein and a sixth port formed therein substantially opposite the fifth port.
  • a fourth muffler defines a fourth volume therein.
  • the fourth muffler has a seventh port formed therein and an eighth port formed through a fourth end substantially opposite the seventh port.
  • a first conduit extends between the seventh port and the fifth port and a second conduit extends between the fourth port and the sixth port.
  • a third conduit extends from the third port to a valve, a first scrubber is in fluid communication with the valve and a second scrubber is in fluid communication with the valve via a fourth conduit.
  • a high-pressure processing apparatus includes a first chamber and a second chamber defining a process volume therein.
  • the second chamber is disposed within the first chamber.
  • a muffler assembly includes a first muffler defining a first volume therein, the first muffler having a first port formed in a first end and a second port formed in a second end opposite the first port.
  • a second muffler defines a second volume therein.
  • the second muffler has a third port formed in a third end and a fourth port formed in the second muffler substantially opposite the third port.
  • a third muffler defines a third volume therein.
  • the third muffler has a fifth port formed therein and a sixth port formed therein substantially opposite the fifth port.
  • a fourth muffler defines a fourth volume therein.
  • the fourth muffler has a seventh port formed therein and an eighth port formed through a fourth end substantially opposite the seventh port.
  • a first conduit extends between the seventh port and the fifth port and a second conduit extends between the fourth port and the sixth port.
  • a third conduit extends from the third port to a valve, a first scrubber is in fluid communication with the valve and a second scrubber is in fluid communication with the valve via a fourth conduit.
  • a fifth conduit is disposed between the process volume and the first port of the first muffler.
  • Figure 1 is a schematic illustration of a high pressure processing apparatus according to an embodiment described herein.
  • Figure 2 is a schematic illustration of an effluent management module according to an embodiment described herein.
  • Figure 3 is a schematic, cross-sectional illustration of a muffler assembly according to an embodiment described herein.
  • Embodiments of the present disclosure relate to high pressure processing apparatus for semiconductor processing.
  • the apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber.
  • a high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.
  • FIG. 1 is a schematic illustration of a high pressure processing apparatus 100 according to an embodiment described herein.
  • the apparatus 100 includes a first chamber 116 which defines a first volume 118 therein.
  • a volume of the first volume 118 is between about 80 liters and about 150 liters, for example, between about 100 liters and about 120 liters.
  • the first chamber 116 is fabricated from a process compatible material, such as aluminum, stainless steel, alloys thereof, and combinations thereof.
  • the material selected for fabrication of the first chamber 116 is suitable for operation at sub-atmospheric pressures, for example pressures less than about 700 Torr, such as 650 Torr or less.
  • An effluent management module 115 is coupled to and in fluid communication with the first chamber 116.
  • the first chamber 116 has an exhaust port 128 formed therein.
  • An exhaust conduit 103 is coupled to the first chamber 116 at the exhaust port 128 such that the exhaust conduit 103 is in fluid communication with the first volume 118.
  • An isolation valve 105 and a throttle valve 107 are disposed on the exhaust conduit 103.
  • the isolation valve 105 is disposed on the exhaust conduit 103 between the throttle valve 107 and the exhaust port 128.
  • the isolation valve 105 is operable to initiate and extinguish fluid communication between the first volume 118 and an exhaust 113.
  • the throttle valve 107 controls a flow rate of effluent flowing through the exhaust conduit 103 from the first volume 118.
  • a pump 109 is also coupled to the exhaust conduit 103 and the pump 109 operates to pull fluid from the first volume 118 to the exhaust 113.
  • the pump 109 is disposed on exhaust conduit 103 between the throttle valve 107 and the exhaust 113.
  • the pump 109 generates a sub-atmospheric pressure in the first volume 118, such as a pressure less than about 700 Torr.
  • a scrubber 111 is also disposed on the exhaust conduit 103 between the pump 109 and the exhaust 113. The scrubber 111 is in fluid communication with the first volume 118 via the exhaust conduit 103 and the scrubber 111 is configured to treat effluent from the first volume 118 prior to the effluent exiting the exhaust conduit 103 to the exhaust 113.
  • the first chamber 116 has an external surface 124 which is not exposed to the first volume 118.
  • a first slit valve 120 is formed in the chamber 116 to enable ingress and egress of a substrate therethrough.
  • a first slit valve door 122 is coupled to the external surface 124 adjacent to the first slit valve 120. In operation, the first slit valve door 122 is opened to enable passage of the substrate therethrough and closes prior to processing of the substrate.
  • a second chamber 102 is disposed within the first volume 118 defined by the first chamber 116.
  • the second chamber 102 defines a second volume 104 therein.
  • the second chamber 102 is fabricated from a process compatible material, such as aluminum, stainless steel, alloys thereof, and combinations thereof.
  • the second chamber 102 is fabricated from a nickel containing steel alloy, for example, a nickel molybdenum containing steel alloy or a nickel chromium molybdenum containing steel alloy.
  • the material selected for fabrication of the second chamber 102 is suitable for operation of the second volume 104 at high pressures, such as greater than about 30 bar, for example, about 50 bar or greater.
  • a pedestal 106 is disposed in the second chamber 102 and the pedestal 106 has a substrate support surface 108 for supporting a substrate thereon during processing.
  • the pedestal 106 includes a resistive heater operable of maintaining a temperature of a substrate disposed on the substrate support surface 108 at a temperature of up to about 550°C.
  • a stem of the pedestal 106 extends through the second chamber 102 and the first chamber 116. The stem of the pedestal 106 may be isolated from the first volume 118 by a bellows assembly which is operable isolate the pedestal 106 from the first volume 118.
  • a second slit valve 110 is formed through the second chamber 102 to enable ingress and egress of the substrate therethrough.
  • the second slit valve 110 is substantially aligned in approximately the same plane as the first slit valve 120.
  • a second slit valve door 112 is coupled to an internal surface 114 of the second chamber 102 adjacent to the second slit valve 110. The positioning of the second slit valve door 112 on the internal surface 114 enables more secure sealing of the second volume 104 during high pressure processing because the high pressure maintained within the second volume 104 urges the second slit valve door 112 against the internal surface 114 to create a substantially air tight seal.
  • the second slit valve door 112 is opened to enable passage of the substrate from the first slit valve 120. After the substrate is positioned on the substrate support surface 108 of the pedestal 106, the second slit valve door 112 closes prior to processing of the substrate.
  • a fluid management apparatus 140 is configured to deliver one or more fluids to the second volume 104 of the second chamber 102.
  • the fluid management apparatus 140 includes a first fluid delivery module 144, a second fluid delivery module 142, and a third fluid delivery module 146.
  • the first fluid delivery module 144 is operable to generate steam and deliver steam to the second volume 104.
  • the first fluid delivery module 144 is in fluid communication with a first fluid source 150.
  • the first fluid source 150 is a water source, and more specifically, a deionized water source.
  • the second fluid delivery module 142 is in fluid communication with a second fluid source 152.
  • the second fluid source 152 is a hydrogen source, and more specifically, an hte source.
  • the third fluid delivery module 146 is in fluid communication with a third fluid source 148.
  • the third fluid source 148 is a nitrogen gas source, for example, an ammonia source.
  • the first fluid delivery module 144 is in fluid communication with the second volume 104 via a first conduit 156.
  • a valve 164 is disposed between the first fluid delivery module 144 and the first conduit 156.
  • the valve 164 is operable to enable fluid flow from the first fluid delivery module 144 through the first conduit 156.
  • a containment enclosure 166 surrounds the valve 164 and the connections of the valve 164 between the first fluid delivery module 144 and the first conduit 156.
  • the first conduit 156 extends from the first valve 164 through the first chamber 116, the first volume 118, and the second chamber 102 to a port 132 formed on the internal surface 114 of the second chamber 102.
  • a heater jacket 157 surrounds the first conduit 156 and extends along a length of the first conduit 156 between the valve 164 and the first chamber 116.
  • the second fluid delivery module 142 is in fluid communication with the second volume 104 via a second conduit 154.
  • a valve 160 is disposed between the second fluid delivery module 142 and the second conduit 154.
  • the valve 160 is operable to enable fluid flow from the second fluid delivery module 142 through the second conduit 154.
  • a containment enclosure 162 surrounds the valve 160 and the connections of the valve 160 between the second fluid delivery module 142 and the second conduit 154.
  • the second conduit 154 extends from the second valve 160 through the first chamber 116, the first volume 118, and the second chamber 102 to a port 130 formed on the internal surface 114 of the second chamber 102.
  • a heater jacket 155 surrounds the second conduit 154 and extends along a length of the second conduit 154 between the valve 160 and the first chamber 116.
  • the third fluid delivery module 146 is in fluid communication with the second volume 104 via a third conduit 158.
  • a valve 168 is disposed between the third fluid delivery module 146 and the third conduit 158.
  • the valve 168 is operable to enable fluid flow from the third fluid delivery module 146 through the third conduit 158.
  • a containment enclosure 170 surrounds the valve 168 and the connections of the valve 168 between the third fluid delivery module 146 and the third conduit 158.
  • the third conduit 158 extends from the third valve 168 through the first chamber 116, the first volume 118, and the second chamber 102 to a port 134 formed on the internal surface 114 of the second chamber 102.
  • a heater jacket 159 surrounds the third conduit 158 and extends along a length of the third conduit 158 between the valve 168 and the first chamber 116.
  • Each of the heater jackets 155, 157, 159 are operable to maintain a temperature of a respective conduit 154, 156, 158 at about 300°C or greater, for example. 350°C or greater.
  • the heater jackets 155, 157, 159 comprise resistive heaters.
  • the heater jackets 155, 157, 159 comprise fluid channels though which a heated fluid is flowed.
  • the apparatus 100 also includes a purge gas source 172.
  • the purge gas source 172 is an inert gas source, such as a nitrogen source or a noble gas source.
  • the purge gas source 172 is in fluid communication with the first volume 118.
  • a conduit 174 extends from the purge gas source 172 to a port 126 formed in the first chamber 116. The fluid communication between the purge gas source 172 and the first volume 118 enables the first volume 118 to be purged with an inert gas.
  • the first volume 118 is a containment volume that functions as a failsafe should the second volume 104 experience an unplanned depressurization event.
  • the first volume 118 enables improved safety of operation of the second chamber 102 at elevated pressures.
  • the purge gas source 172 is also in fluid communication with each of the conduits 156, 154, 158.
  • a conduit 176 extends from the purge gas source 172 to each of the valves 160, 164, 168.
  • the valves 160, 164, 168 are opened to receive purge gas from the purge gas source 172 flowing through the conduit 176, the conduits 154, 156, 158 are purged to eliminate fluids in the conduits 154, 156, 158 that were previously delivered from the fluid delivery modules 142, 144, 146.
  • the fluid communication between the purge gas source 172 and the conduits 154, 156, 158 also enables purging of the second volume 104.
  • an exhaust port 136 is formed in the second chamber 102.
  • a conduit 180 extends from the exhaust port 136 to a regulator valve 184 which is configured to enable a pressure drop across the regulator valve 184.
  • pressurized fluid exhausted from the second volume 104 travels through the exhaust port 136, through the conduit 180, and through a valve 182 to the regulator valve 184 where a pressure of the fluid is reduced from greater than about 30 bar, such as about 50 bar, to between about 0.5 bar to about 3 bar.
  • the valve 182 is disposed inline with the regulator valve 184 and enables transfer of the reduced pressure fluid from the conduit 180 to a conduit 188.
  • a pressure relief port 138 is also formed in the second chamber 102.
  • a conduit 186 extends from the pressure relief port 138 to the conduit 188 and the conduit 186 is coupled to the conduit 188 downstream of the regulator valve 184 and the valve 182.
  • the pressure relief port 138 and conduit 186 are configured to bypass the regulator valve 184 and function as a secondary pressure reduction for the second volume 104.
  • a valve 196 is disposed on the conduit 188 downstream from the conduit 186, the regulator valve 184, and the valve 182. The valve 196 functions to enable fluid flow from the second volume 104 via the pressure relief port 138 without passing through the regulator valve 184.
  • the second volume 104 has a bifurcated pressure relief architecture, first through the exhaust port 136, the conduit 180, and the regulator valve 184, and second, through the pressure relief port 138 and the conduit 186. It is believed that the bifurcated pressure relief architecture enables improved control of the pressures generated in the second volume 104.
  • a conduit 190 is coupled to and extends from the conduit 188 between the valve 184 and the valve 196. More specifically, the conduit 190 is coupled to the conduit 188 downstream of a location where the conduit 186 is coupled to the conduit 188.
  • a valve 192 is disposed on the conduit 190 and is operable to enable selective fluid communication between the second volume 104 and a steam trap 194.
  • the steam trap 194 is configured to condense steam released from the second volume 104 when high pressure steam processes are performed in the second volume 104.
  • the steam trap 194 is in fluid communication with the second volume 104 via the conduits 190, 188, and 186 when the valve 192 is opened and the valve 182 is closed.
  • the steam trap 194 may also function as a secondary pressure reduction apparatus for high pressure steam released from the second volume 104.
  • a containment enclosure 198 is coupled to the first chamber 116 and each of the regulator valve 184, the valve 182, the valve 196, and the valve 192 are disposed within the containment enclosure 198.
  • the conduits 188, 190 are disposed within the containment enclosure 198 and at least a portion of each of the conduits 180, 186 is disposed within the containment enclosure 198.
  • the steam trap 194 is disposed within the containment enclosure 198. In another embodiment, the steam trap 194 is disposed outside of the containment enclosure 198.
  • a sensor 121 is coupled to the containment enclosure 198 and in fluid communication with the volume defined within the containment enclosure 198.
  • the sensor 121 is configured to detect leakage of a gas within the containment enclosure volume.
  • the sensor 121 is an ammonia detector.
  • the sensor 121 is a hydrogen detector.
  • the sensor 121 includes multiple sensors, for example, an ammonia detector and a hydrogen detector.
  • the containment enclosure 198 is configured to isolate and contain any leakage of effluent exhausted from the second volume 104. If leakage of effluent, such as the gases described above, is detected, the volume defined by the containment enclosure 198 is purged by an inert gas from a gas source 131.
  • the gas source 131 is configured to deliver nitrogen to the volume defined by the containment enclosure 198. Effluent leaked into the volume is exhausted from the containment enclosure 198.
  • the containment enclosure 198 volume is in fluid communication with the scrubber 111 to enable treatment of effluent constrained within the containment enclosure 198 when the effluent is exhausted from the containment enclosure 198.
  • valve 196 When the valve 196 is opened, fluid from the conduit 188 travels to a conduit 101 which is in fluid communication with the effluent management module 115.
  • the effluent management module 115 which treats and manages exhaust from both of the first volume 118 and the second volume 104, is described in greater detail with regard to Figure 2.
  • FIG. 2 is a schematic illustration of the effluent management module 115 according to an embodiment described herein.
  • the module 115 includes the exhaust conduit 103, the isolation valve 105, the throttle valve 107, the pump 109, the scrubber 111 , and the exhaust 113 as described above with regard to Figure 1.
  • the module 115 also includes a muffler assembly 202.
  • the muffler assembly 202 is in fluid communication with the second volume 104 via the conduit 101.
  • the muffler assembly 202 includes a plurality of mufflers 204, 208, 212, 216 which are operable to reduce a pressure of effluent flowing through the muffler stack 202.
  • the muffler assembly 202 includes a first muffler 204 which defines a volume 206, a second muffler 208 which defines a volume 210, a third muffler 212 which defined a volume 214, and a fourth muffler 216 which defines a volume 218.
  • the conduit 101 is coupled to and extends between the valve 196 and the first muffler 204.
  • a conduit 220 extends from the first muffler 204 opposite the conduit 101 to the exhaust conduit 103.
  • the conduit 220 is coupled to the exhaust conduit 103 between the throttle valve 107 and the pump 109.
  • a conduit 222 extends from the pump 109 to the fourth muffler 216.
  • a conduit 224 extends between the fourth muffler 216 and the third muffler 212.
  • a conduit 226 extends between the third muffler 212 and the second muffler 208.
  • effluent flowing through the conduit 101 enters the volume 206 of the first muffler 204 and flows through the volume 206 to the conduit 220.
  • a pressure of the effluent within the conduit is between about 15 psi and about 30 psi.
  • the pressure of the effluent exiting the volume 206 at the conduit 220 is between about 0 psi and about 5 psi.
  • the first muffler 204 functions as a pressure reduction apparatus which allows the effluent to experience volumetric expansion to reduce the pressure of the effluent.
  • the effluent continues from the conduit 220 through the exhaust conduit 103 to the pump 109.
  • effluent from the first volume 118 is also present in the exhaust conduit should effluent escape from the second volume 104 into the first volume 118.
  • the pump 109 increases a pressure of the effluent to less than about 16.5 psi, such as between about 5 psi and about 15 psi, to move the effluent through the remainder of the muffler assembly 202.
  • the pump pressurized effluent travels through the conduit 222 to the fourth muffler 216 and expands in the volume 218.
  • the effluent then flows from the volume 218 through the conduit 224 to the volume 214 of the third muffler 212.
  • the volume 214 further reduces the pressure of the effluent and the effluent travels from the volume 214 through the conduit 226 to the volume 210 of the second muffler 208.
  • the volume 210 further reduces the pressure of the effluent such that when the effluent leaves the volume 210 the effluent has a pressure of less than about 14.5 psi, such as less than about 10 psi, for example, between about 0 psi and about 5 psi.
  • the effluent exits the volume 210 through a conduit 228 which is coupled to and in fluid communication with the volume 210.
  • the conduit 228 extends from the second muffler 208 to a bypass valve 230.
  • the bypass valve 230 enables fluid flow from the conduit 228 to the scrubber 111 and exhaust 113.
  • the bypass valve 230 is opened which enables fluid flowing through the module 115 to enter the conduit 232 rather than flowing to the scrubber 111.
  • the bypass valve 230 is also opened when the scrubber 111 fails to prevent release of untreated effluent to the exhaust 113.
  • the conduit 232 has a flow restrictor 234 disposed thereon which reduces a flow of effluent traveling through the conduit 232.
  • an amount of Nhh flowing through the conduit 232 is modulate by the flow restrictor 234 such that the concentration of NFta is less than about 5% by volume, such as less than about 2% by volume.
  • the purge gas source 172 is also in fluid communication with the conduit 232 via a conduit 242.
  • a mass flow controller 244 controls the amount of purge gas, such as nitrogen, flowing from the purge gas source 172 through the conduit 242 such that the effluent in the conduit 232 is mixed with an appropriate amount of purge gas before the effluent travels through a conduit 236 to a second scrubber 238.
  • purge gas such as nitrogen
  • the conduit 236 tees from the intersection of the conduits 232, 242 and extends to the second scrubber 238.
  • the second scrubber 238 treats the effluent when the bypass valve 230 is opened and the effluent NFta concentration is modulated to an acceptable amount for treatment. After treatment in the second scrubber 238, the treated effluent travels through a conduit 240 which is in fluid communication between the second scrubber 238 and the exhaust 113.
  • FIG. 3 is a schematic, cross-sectional illustration of the muffler assembly 202 according to an embodiment described herein.
  • the muffler assembly 202 includes the plurality of mufflers 204, 208, 212, 216.
  • the mufflers 204, 208, 212, 216 are fabricated from a stainless steel material or alloys thereof.
  • the mufflers 204, 208, 212, 216 are fabricated from an aluminum material or alloys thereof.
  • Each of the mufflers 204, 208, 212, 216 defines a respective volume 206, 210, 124, 218 therein.
  • each of the mufflers 204, 208, 212, 216 have substantially similar dimensions.
  • the muffler 204, 208, 212, 216 are cylindrical.
  • a diameter 342 of each of the mufflers 204, 208, 212, 216 is between about 20 inches and about 40 inches, for example, about 30 inches.
  • the mufflers 204, 208, 212, 216 is between about 60 inches and about 100 inches, such as about 80 inches.
  • the mufflers 204, 208, 212, 216 are stacked in a substantially vertical arrangement.
  • the mufflers 204, 208, 212, 216 are structured by a frame assembly (not shown) to facilitate disposition in the substantially vertical arrangement. It is also contemplated that the mufflers 204, 208, 212, 216 may be disposed in a horizontal arrangement or other arrangements.
  • the first muffler 204 has a port 302 formed through a first end 346.
  • the port 302 is formed through a center region of the first end 346.
  • the conduit 101 couples to the port 302 to enable fluid communication between the conduit 101 and the volume 206.
  • a port 304 is formed through a second end 348 of the first muffler 204 opposite the port 302.
  • the port 304 is formed through a center region of the second end 348.
  • effluent enters the volume 206 through the port 302 and exits the volume 206 through the port 304.
  • the conduit 220 is coupled to the port 304 to enable fluid communication between the volume 206 and the exhaust conduit 103.
  • effluent from the second volume 104 flows sequentially through the first muffler 204, the fourth muffler 216, the third muffler 212, and the second muffler 208.
  • a port 316 is formed in a second end 360 of the fourth muffler 216.
  • the conduit 222 is coupled to the port 316 to enable fluid communication between the pump 109 and the volume 218.
  • a port 314 is formed through the fourth muffler 216 adjacent to a first end 358 of the fourth muffler 216 opposite the port 316. In operation, effluent enters the volume 218 through the port 316 and exits the volume 218 through the port 314.
  • the sequential flow of effluent proceeds from the first muffler 204 to the fourth muffler 216, the third muffler 212, and the second muffler 208.
  • the volume 218 of the fourth muffler 216 is in direct fluid communication with the volume 214 of the third muffler 212.
  • the volume 214 of the third muffler 212 is in direct fluid communication with the volume 210 of the second muffler 208.
  • the volume 206 of the first muffler 204 is in indirect fluid communication with the volume 218 of the fourth muffler 216 via the exhaust conduit 103.
  • the direct and indirect fluid communication between the various volumes 206, 210, 214, 218 may be varied depending upon the desired effluent pressure reduction and/or physical space requirements.
  • a port 312 is formed in the third muffler 212 adjacent to a first end 354 of the third muffler 212.
  • a conduit 224 extends between the port 312 and the port 314 to enable fluid communication between the volume 218 and the volume 214.
  • a port 310 is formed in the third muffler 212 adjacent to a second end 356 of the third muffler 212 opposite the port 312. In operation, effluent enters the volume 214 through the port 312 and exits the volume 214 through the port 310.
  • a port 308 is formed in the second muffler 208 adjacent to a second end 352 of the second muffler 208.
  • a conduit 226 extends between the port 308 and the port 310 to enable fluid communication between the volume 214 and the volume 210.
  • a port 306 is formed in the second muffler 208 through a first end 350 of the second muffler opposite the port 308. In one embodiment, the port 306 is formed through a center region of the first end 350.
  • effluent enters the volume 210 through the port 308 and exits the volume 210 through the port 306.
  • the conduit 228 is coupled to the port 306 to remove effluent from the volume 210 and transfer the effluent to other apparatus of the module 115.
  • Each of the mufflers 204, 208, 212, 216 and the respective fluid inlet and outlet ports are disposed opposite one another along the length 344 of the mufflers 204, 208, 212, 216 to enable volumetric expansion of the effluent as the effluent traverses through the volumes 206, 210, 214, 218.
  • a port 318 is formed through the second end 348 of the first muffler 204 adjacent to the port 304. In one embodiment, the port 318 is formed through the second end 348 radially outward of the port 304.
  • a conduit 320 is coupled to and extends from the port 318 to a cap 334. When condensate or other fluid accumulates within the volume 206, the cap 334 is removed and the fluid is evacuated from the volume 206 via the port 318 and conduit 320.
  • a port 322 is formed through the second end 352 of the second muffler 208.
  • the port 322 is formed through the second end 352 radially outward of the port 306.
  • a conduit 324 is coupled to and extends from the port 322 to a cap 336. When condensate or other fluid accumulates within the volume 210, the cap 336 is removed and the fluid is evacuated from the volume 210 via the port 322 and conduit 324.
  • a port 326 is formed through the second end 356 of the third muffler 212.
  • a conduit 328 is coupled to and extends from the port 326 to a cap 338. When condensate or other fluid accumulates within the volume 214, the cap 338 is removed and the fluid is evacuated from the volume 214 via the port 326 and conduit 328.
  • a port 330 is formed through the second end 360 of the fourth muffler 216 adjacent to the port 316.
  • the port 330 is formed through the second end 360 radially outward of the port 316.
  • a conduit 332 is coupled to and extends from the port 330 to a cap 340. When condensate or other fluid accumulates within the volume 218, the cap 340 is removed and the fluid is evacuated from the volume 218 via the port 330 and conduit 332.
  • effluent management apparatus for improving pressure reduction of effluent and for treating effluent are described herein.
  • the muffler assembly enables pressure reduction of effluent utilized during high pressure processing operation by sequentially flowing the effluent through a series of mufflers to enable volumetric expansion (and associated pressure reduction) of the effluent.
  • Apparatus described herein also include effluent treatment apparatus for standard operation and high pressure processing apparatus and for emergency effluent control in the case of an unplanned or uncontained effluent release.

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023036563A (ja) * 2021-09-02 2023-03-14 ウォニク アイピーエス カンパニー リミテッド 基板処理装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10224224B2 (en) * 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
WO2019036157A1 (en) 2017-08-18 2019-02-21 Applied Materials, Inc. HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
WO2019099255A2 (en) 2017-11-17 2019-05-23 Applied Materials, Inc. Condenser system for high pressure processing system
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
JP7036642B2 (ja) * 2018-03-23 2022-03-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及びその排気方法
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
JP2022507390A (ja) 2018-11-16 2022-01-18 アプライド マテリアルズ インコーポレイテッド 強化拡散プロセスを使用する膜の堆積
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050250347A1 (en) * 2003-12-31 2005-11-10 Bailey Christopher M Method and apparatus for maintaining by-product volatility in deposition process
US20070012402A1 (en) * 2003-07-08 2007-01-18 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
US20100012292A1 (en) * 2007-03-31 2010-01-21 Tokyo Electron Limited Trap apparatus, exhaust system and processing system using same
CN104047676A (zh) * 2014-06-14 2014-09-17 马根昌 改良式对冲消声器
US20150000870A1 (en) * 2013-06-24 2015-01-01 Ebara Corporation Exhaust gas abatement system

Family Cites Families (326)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4524587A (en) 1967-01-10 1985-06-25 Kantor Frederick W Rotary thermodynamic apparatus and method
US3758316A (en) 1971-03-30 1973-09-11 Du Pont Refractory materials and process for making same
US3749383A (en) 1971-04-29 1973-07-31 Rca Corp Apparatus for processing semiconductor devices
US4576652A (en) 1984-07-12 1986-03-18 International Business Machines Corporation Incoherent light annealing of gallium arsenide substrate
JPH0748489B2 (ja) 1987-07-27 1995-05-24 富士通株式会社 プラズマ処理装置
US4879259A (en) 1987-09-28 1989-11-07 The Board Of Trustees Of The Leland Stanford Junion University Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure
CA1308496C (en) 1988-02-18 1992-10-06 Rajiv V. Joshi Deposition of tungsten on silicon in a non-self-limiting cvd process
US5114513A (en) 1988-10-27 1992-05-19 Omron Tateisi Electronics Co. Optical device and manufacturing method thereof
US5167717A (en) 1989-02-15 1992-12-01 Charles Boitnott Apparatus and method for processing a semiconductor wafer
JP2730695B2 (ja) 1989-04-10 1998-03-25 忠弘 大見 タングステン膜の成膜装置
US5126117A (en) * 1990-05-22 1992-06-30 Custom Engineered Materials, Inc. Device for preventing accidental releases of hazardous gases
US5175123A (en) 1990-11-13 1992-12-29 Motorola, Inc. High-pressure polysilicon encapsulated localized oxidation of silicon
US5050540A (en) 1991-01-29 1991-09-24 Arne Lindberg Method of gas blanketing a boiler
US5314541A (en) 1991-05-28 1994-05-24 Tokyo Electron Limited Reduced pressure processing system and reduced pressure processing method
JPH0521310A (ja) 1991-07-11 1993-01-29 Canon Inc 微細パタン形成方法
JPH05129296A (ja) 1991-11-05 1993-05-25 Fujitsu Ltd 導電膜の平坦化方法
US5319212A (en) 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
US5607002A (en) 1993-04-28 1997-03-04 Advanced Delivery & Chemical Systems, Inc. Chemical refill system for high purity chemicals
US5578132A (en) 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
JPH0766424A (ja) 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US5880041A (en) 1994-05-27 1999-03-09 Motorola Inc. Method for forming a dielectric layer using high pressure
US5597439A (en) 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
US5808245A (en) * 1995-01-03 1998-09-15 Donaldson Company, Inc. Vertical mount catalytic converter muffler
JPH08195493A (ja) 1995-01-13 1996-07-30 Toshiba Corp 薄膜トランジスタの製造方法
US5620524A (en) 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
US5858051A (en) 1995-05-08 1999-01-12 Toshiba Machine Co., Ltd. Method of manufacturing optical waveguide
JP2872637B2 (ja) * 1995-07-10 1999-03-17 アプライド マテリアルズ インコーポレイテッド マイクロ波プラズマベースアプリケータ
US5857368A (en) 1995-10-06 1999-01-12 Applied Materials, Inc. Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion
JPH09296267A (ja) 1995-11-21 1997-11-18 Applied Materials Inc 高圧押出しによる、半導体基板における金属パスの製造装置および方法
US5677230A (en) 1995-12-01 1997-10-14 Motorola Method of making wide bandgap semiconductor devices
US5895274A (en) 1996-01-22 1999-04-20 Micron Technology, Inc. High-pressure anneal process for integrated circuits
KR980012044A (ko) 1996-03-01 1998-04-30 히가시 데츠로 기판건조장치 및 기판건조방법
US5998305A (en) 1996-03-29 1999-12-07 Praxair Technology, Inc. Removal of carbon from substrate surfaces
US5738915A (en) 1996-09-19 1998-04-14 Lambda Technologies, Inc. Curing polymer layers on semiconductor substrates using variable frequency microwave energy
US6444037B1 (en) 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US6082950A (en) 1996-11-18 2000-07-04 Applied Materials, Inc. Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding
US5886864A (en) 1996-12-02 1999-03-23 Applied Materials, Inc. Substrate support member for uniform heating of a substrate
US6136664A (en) 1997-08-07 2000-10-24 International Business Machines Corporation Filling of high aspect ratio trench isolation
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US5963817A (en) 1997-10-16 1999-10-05 International Business Machines Corporation Bulk and strained silicon on insulator using local selective oxidation
JP3199006B2 (ja) 1997-11-18 2001-08-13 日本電気株式会社 層間絶縁膜の形成方法および絶縁膜形成装置
US6442980B2 (en) 1997-11-26 2002-09-03 Chart Inc. Carbon dioxide dry cleaning system
US6846739B1 (en) 1998-02-27 2005-01-25 Micron Technology, Inc. MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer
US6164412A (en) * 1998-04-03 2000-12-26 Arvin Industries, Inc. Muffler
KR100286339B1 (ko) * 1998-05-14 2001-05-02 김영환 반도체웨이퍼증착장비의펌프압력측정장치
US6719516B2 (en) 1998-09-28 2004-04-13 Applied Materials, Inc. Single wafer load lock with internal wafer transport
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
JP2000256856A (ja) * 1999-03-11 2000-09-19 Tokyo Electron Ltd 処理装置及び処理装置用真空排気システム及び減圧ｃｖｄ装置及び減圧ｃｖｄ装置用真空排気システム及びトラップ装置
US6468490B1 (en) * 2000-06-29 2002-10-22 Applied Materials, Inc. Abatement of fluorine gas from effluent
US6334266B1 (en) 1999-09-20 2002-01-01 S.C. Fluids, Inc. Supercritical fluid drying system and method of use
US6612317B2 (en) 2000-04-18 2003-09-02 S.C. Fluids, Inc Supercritical fluid delivery and recovery system for semiconductor wafer processing
DE69940114D1 (de) 1999-08-17 2009-01-29 Applied Materials Inc Oberflächenbehandlung von kohlenstoffdotierten SiO2-Filmen zur Erhöhung der Stabilität während der O2-Veraschung
US6299753B1 (en) 1999-09-01 2001-10-09 Applied Materials, Inc. Double pressure vessel chemical dispenser unit
JP2001110729A (ja) * 1999-10-06 2001-04-20 Mitsubishi Heavy Ind Ltd 半導体素子の連続製造装置
US20030148631A1 (en) 1999-11-08 2003-08-07 Taiwan Semiconductor Manufacturing Company Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile
US6500603B1 (en) 1999-11-11 2002-12-31 Mitsui Chemicals, Inc. Method for manufacturing polymer optical waveguide
TW484170B (en) 1999-11-30 2002-04-21 Applied Materials Inc Integrated modular processing platform
US6150286A (en) 2000-01-03 2000-11-21 Advanced Micro Devices, Inc. Method of making an ultra thin silicon nitride film
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
JP2001250787A (ja) 2000-03-06 2001-09-14 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
US20040025908A1 (en) 2000-04-18 2004-02-12 Stephen Douglas Supercritical fluid delivery system for semiconductor wafer processing
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US6852167B2 (en) 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
JP4335469B2 (ja) 2001-03-22 2009-09-30 株式会社荏原製作所 真空排気装置のガス循環量調整方法及び装置
US6797336B2 (en) 2001-03-22 2004-09-28 Ambp Tech Corporation Multi-component substances and processes for preparation thereof
TW544797B (en) 2001-04-17 2003-08-01 Kobe Steel Ltd High-pressure processing apparatus
JP2002319571A (ja) 2001-04-20 2002-10-31 Kawasaki Microelectronics Kk エッチング槽の前処理方法及び半導体装置の製造方法
US7080651B2 (en) 2001-05-17 2006-07-25 Dainippon Screen Mfg. Co., Ltd. High pressure processing apparatus and method
US6752585B2 (en) 2001-06-13 2004-06-22 Applied Materials Inc Method and apparatus for transferring a semiconductor substrate
EP1271636A1 (en) 2001-06-22 2003-01-02 Infineon Technologies AG Thermal oxidation process control by controlling oxidation agent partial pressure
US20080268635A1 (en) 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
JP2003051474A (ja) 2001-08-03 2003-02-21 Kobe Steel Ltd 高圧処理装置
US6531412B2 (en) 2001-08-10 2003-03-11 International Business Machines Corporation Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
US6781801B2 (en) 2001-08-10 2004-08-24 Seagate Technology Llc Tunneling magnetoresistive sensor with spin polarized current injection
JP2003077974A (ja) 2001-08-31 2003-03-14 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6619304B2 (en) 2001-09-13 2003-09-16 Micell Technologies, Inc. Pressure chamber assembly including non-mechanical drive means
US7105061B1 (en) 2001-11-07 2006-09-12 Novellus Systems, Inc. Method and apparatus for sealing substrate load port in a high pressure reactor
US20030098069A1 (en) 2001-11-26 2003-05-29 Sund Wesley E. High purity fluid delivery system
JP2003166065A (ja) 2001-11-30 2003-06-13 Sekisui Chem Co Ltd 放電プラズマ処理装置
JP2003188387A (ja) 2001-12-20 2003-07-04 Sony Corp 薄膜トランジスタ及びその製造方法
US6848458B1 (en) 2002-02-05 2005-02-01 Novellus Systems, Inc. Apparatus and methods for processing semiconductor substrates using supercritical fluids
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
US6835503B2 (en) 2002-04-12 2004-12-28 Micron Technology, Inc. Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7638727B2 (en) 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
US7521089B2 (en) 2002-06-13 2009-04-21 Tokyo Electron Limited Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers
US20070243317A1 (en) 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
US6843882B2 (en) * 2002-07-15 2005-01-18 Applied Materials, Inc. Gas flow control in a wafer processing system having multiple chambers for performing same process
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US20070212850A1 (en) 2002-09-19 2007-09-13 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
JP2004127958A (ja) 2002-09-30 2004-04-22 Kyoshin Engineering:Kk 高圧アニール水蒸気処理を行なう装置及び方法
US20040060519A1 (en) 2002-10-01 2004-04-01 Seh America Inc. Quartz to quartz seal using expanded PTFE gasket material
US6889508B2 (en) 2002-10-02 2005-05-10 The Boc Group, Inc. High pressure CO2 purification and supply system
US7270761B2 (en) 2002-10-18 2007-09-18 Appleid Materials, Inc Fluorine free integrated process for etching aluminum including chamber dry clean
JPWO2004049414A1 (ja) 2002-11-25 2006-03-30 光洋サーモシステム株式会社 半導体処理装置用電気ヒータ
US20040112409A1 (en) 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
WO2004070796A2 (en) 2003-02-04 2004-08-19 Applied Materials, Inc. Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure
JP3956049B2 (ja) 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
US7079760B2 (en) 2003-03-17 2006-07-18 Tokyo Electron Limited Processing system and method for thermally treating a substrate
US7086638B2 (en) 2003-05-13 2006-08-08 Applied Materials, Inc. Methods and apparatus for sealing an opening of a processing chamber
US6939794B2 (en) 2003-06-17 2005-09-06 Micron Technology, Inc. Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
US7226512B2 (en) 2003-06-18 2007-06-05 Ekc Technology, Inc. Load lock system for supercritical fluid cleaning
JP4173781B2 (ja) 2003-08-13 2008-10-29 株式会社神戸製鋼所 高圧処理方法
US20050136684A1 (en) 2003-12-23 2005-06-23 Applied Materials, Inc. Gap-fill techniques
TW200527491A (en) * 2003-12-23 2005-08-16 John C Schumacher Exhaust conditioning system for semiconductor reactor
US7158221B2 (en) 2003-12-23 2007-01-02 Applied Materials, Inc. Method and apparatus for performing limited area spectral analysis
US7030468B2 (en) 2004-01-16 2006-04-18 International Business Machines Corporation Low k and ultra low k SiCOH dielectric films and methods to form the same
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
JP4393268B2 (ja) 2004-05-20 2010-01-06 株式会社神戸製鋼所 微細構造体の乾燥方法
US20050269291A1 (en) 2004-06-04 2005-12-08 Tokyo Electron Limited Method of operating a processing system for treating a substrate
US7521378B2 (en) 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification
US7491658B2 (en) 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
CN101061253B (zh) 2004-11-22 2010-12-22 应用材料股份有限公司 使用批式制程腔室的基材处理装置
KR100697280B1 (ko) * 2005-02-07 2007-03-20 삼성전자주식회사 반도체 제조 설비의 압력 조절 방법
US20060176928A1 (en) * 2005-02-08 2006-08-10 Tokyo Electron Limited Substrate processing apparatus, control method adopted in substrate processing apparatus and program
US9576824B2 (en) 2005-02-22 2017-02-21 Spts Technologies Limited Etching chamber with subchamber
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
WO2006101315A1 (en) 2005-03-21 2006-09-28 Pkl Co., Ltd. Device and method for cleaning photomask
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20120060868A1 (en) 2005-06-07 2012-03-15 Donald Gray Microscale fluid delivery system
ATE419560T1 (de) 2005-06-10 2009-01-15 Obducat Ab Kopieren eines musters mit hilfe eines zwischenstempels
JP4747693B2 (ja) 2005-06-28 2011-08-17 住友電気工業株式会社 樹脂体を形成する方法、光導波路のための構造を形成する方法、および光学部品を形成する方法
US7361231B2 (en) 2005-07-01 2008-04-22 Ekc Technology, Inc. System and method for mid-pressure dense phase gas and ultrasonic cleaning
JP5117856B2 (ja) 2005-08-05 2013-01-16 株式会社日立国際電気 基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法
US7534080B2 (en) 2005-08-26 2009-05-19 Ascentool, Inc. Vacuum processing and transfer system
US7531404B2 (en) 2005-08-30 2009-05-12 Intel Corporation Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
KR100696178B1 (ko) 2005-09-13 2007-03-20 한국전자통신연구원 광 도파로 마스터 및 그 제조 방법
US8926731B2 (en) 2005-09-13 2015-01-06 Rasirc Methods and devices for producing high purity steam
WO2007043383A1 (ja) 2005-10-07 2007-04-19 Nikon Corporation 微小構造体およびその製造方法
US7794667B2 (en) 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US7387968B2 (en) 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process
US20070187386A1 (en) 2006-02-10 2007-08-16 Poongsan Microtec Corporation Methods and apparatuses for high pressure gas annealing
US7578258B2 (en) 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
JP2007242791A (ja) 2006-03-07 2007-09-20 Hitachi Kokusai Electric Inc 基板処理装置
WO2007133595A2 (en) 2006-05-08 2007-11-22 The Board Of Trustees Of The University Of Illinois Integrated vacuum absorption steam cycle gas separation
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7650965B2 (en) * 2006-06-09 2010-01-26 Emcon Technologies Llc Exhaust system
JP2008073611A (ja) 2006-09-21 2008-04-03 Dainippon Screen Mfg Co Ltd 高圧処理装置
JP4814038B2 (ja) 2006-09-25 2011-11-09 株式会社日立国際電気 基板処理装置および反応容器の着脱方法
WO2008047886A1 (en) 2006-10-13 2008-04-24 Asahi Glass Co., Ltd. Method of smoothing surface of substrate for euv mask blank, and euv mask blank obtained by the method
US7790587B2 (en) 2006-11-07 2010-09-07 Intel Corporation Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby
JP2008153635A (ja) 2006-11-22 2008-07-03 Toshiba Matsushita Display Technology Co Ltd Ｍｏｓ型半導体素子の製造方法
US20080169183A1 (en) 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
JP2008192642A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
US20080233404A1 (en) 2007-03-22 2008-09-25 3M Innovative Properties Company Microreplication tools and patterns using laser induced thermal embossing
US20080241384A1 (en) 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
DE102007017641A1 (de) 2007-04-13 2008-10-16 Infineon Technologies Ag Aushärtung von Schichten am Halbleitermodul mittels elektromagnetischer Felder
JP2010525530A (ja) 2007-04-30 2010-07-22 アイファイアー・アイピー・コーポレーション 厚膜誘電性エレクトロルミネセントディスプレイ用の積層厚膜誘電体構造
KR101560705B1 (ko) * 2007-05-25 2015-10-16 어플라이드 머티어리얼스, 인코포레이티드 전자 디바이스 제조 시스템들을 조립하고 작동시키는 방법들 및 장치
US20090018688A1 (en) * 2007-06-15 2009-01-15 Applied Materials, Inc. Methods and systems for designing and validating operation of abatement systems
KR101442238B1 (ko) 2007-07-26 2014-09-23 주식회사 풍산마이크로텍 고압 산소 열처리를 통한 반도체 소자의 제조방법
JP5028193B2 (ja) * 2007-09-05 2012-09-19 株式会社日立ハイテクノロジーズ 半導体製造装置における被処理体の搬送方法
US7951728B2 (en) 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US8668868B2 (en) * 2007-10-26 2014-03-11 Applied Materials, Inc. Methods and apparatus for smart abatement using an improved fuel circuit
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
JP2009212178A (ja) * 2008-03-03 2009-09-17 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP4815464B2 (ja) 2008-03-31 2011-11-16 株式会社日立製作所 微細構造転写スタンパ及び微細構造転写装置
US7655532B1 (en) 2008-07-25 2010-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. STI film property using SOD post-treatment
JP2010056541A (ja) 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US20100089315A1 (en) 2008-09-22 2010-04-15 Applied Materials, Inc. Shutter disk for physical vapor deposition chamber
US8153533B2 (en) 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
KR20100035000A (ko) 2008-09-25 2010-04-02 삼성전자주식회사 서로 다른 종횡비를 갖는 소자 분리 트렌치 갭필 방법 및 그를 이용한 반도체 소자
US7891228B2 (en) 2008-11-18 2011-02-22 Mks Instruments, Inc. Dual-mode mass flow verification and mass flow delivery system and method
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
KR20100082170A (ko) 2009-01-08 2010-07-16 삼성전자주식회사 실리콘 산화막 패턴 및 소자 분리막 형성 방법
JP5883652B2 (ja) 2009-02-04 2016-03-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ処理チャンバのための高周波リターンデバイスおよびプラズマ処理システム
JP2010205854A (ja) 2009-03-02 2010-09-16 Fujitsu Semiconductor Ltd 半導体装置の製造方法
JP4523661B1 (ja) 2009-03-10 2010-08-11 三井造船株式会社 原子層堆積装置及び薄膜形成方法
JP4564570B2 (ja) 2009-03-10 2010-10-20 三井造船株式会社 原子層堆積装置
FR2944147B1 (fr) 2009-04-02 2011-09-23 Saint Gobain Procede de fabrication d'une structure a surface externe texturee pour dispositif a diode electroluminescente organique et struture a surface externe texturee
US20100304027A1 (en) 2009-05-27 2010-12-02 Applied Materials, Inc. Substrate processing system and methods thereof
JP4415062B1 (ja) 2009-06-22 2010-02-17 富士フイルム株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR20110000960A (ko) 2009-06-29 2011-01-06 삼성전자주식회사 반도체 칩, 스택 모듈, 메모리 카드 및 그 제조 방법
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
JP2011066100A (ja) 2009-09-16 2011-03-31 Bridgestone Corp 光硬化性転写シート、及びこれを用いた凹凸パターンの形成方法
US8449942B2 (en) 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
CN103151266B (zh) 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
JP2013517616A (ja) 2010-01-06 2013-05-16 アプライド マテリアルズ インコーポレイテッド 酸化物ライナを使用する流動可能な誘電体
US8304351B2 (en) 2010-01-07 2012-11-06 Applied Materials, Inc. In-situ ozone cure for radical-component CVD
EP2526339A4 (en) 2010-01-21 2015-03-11 Powerdyne Inc PRODUCTION OF STEAM FROM A CARBON SUBSTANCE
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
KR101853802B1 (ko) 2010-03-05 2018-05-02 어플라이드 머티어리얼스, 인코포레이티드 라디칼­성분 ｃｖｄ에 의한 컨포멀 층들
CN101871043B (zh) 2010-06-25 2012-07-18 东莞市康汇聚线材科技有限公司 一种退火炉蒸汽发生器及其控制方法
US8318584B2 (en) 2010-07-30 2012-11-27 Applied Materials, Inc. Oxide-rich liner layer for flowable CVD gapfill
JP2012049446A (ja) 2010-08-30 2012-03-08 Toshiba Corp 超臨界乾燥方法及び超臨界乾燥システム
EP2426720A1 (en) 2010-09-03 2012-03-07 Applied Materials, Inc. Staggered thin film transistor and method of forming the same
TW201216331A (en) 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
JP5806827B2 (ja) 2011-03-18 2015-11-10 東京エレクトロン株式会社 ゲートバルブ装置及び基板処理装置並びにその基板処理方法
JP5450494B2 (ja) 2011-03-25 2014-03-26 株式会社東芝 半導体基板の超臨界乾燥方法
WO2012134025A1 (ko) 2011-03-25 2012-10-04 Lee Seo Young 광도파로 및 그 제조방법
US20120252210A1 (en) 2011-03-30 2012-10-04 Tokyo Electron Limited Method for modifying metal cap layers in semiconductor devices
JP6048400B2 (ja) 2011-03-30 2016-12-21 大日本印刷株式会社 超臨界乾燥装置及び超臨界乾燥方法
JP5759782B2 (ja) * 2011-05-11 2015-08-05 川崎重工業株式会社 湿式排ガス浄化装置
US9299581B2 (en) 2011-05-12 2016-03-29 Applied Materials, Inc. Methods of dry stripping boron-carbon films
WO2012165377A1 (ja) 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP6085423B2 (ja) 2011-05-30 2017-02-22 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
GB201110117D0 (en) 2011-06-16 2011-07-27 Fujifilm Mfg Europe Bv method and device for manufacturing a barrie layer on a flexible substrate
US9536763B2 (en) * 2011-06-28 2017-01-03 Brooks Automation, Inc. Semiconductor stocker systems and methods
WO2013008982A1 (ko) 2011-07-14 2013-01-17 엘티씨 (주) 높은 광추출 성능을 갖는 무기 산란막 {inorganic scattering films having high light extraction performance}
JPWO2013065771A1 (ja) 2011-11-01 2015-04-02 株式会社日立国際電気 半導体装置の製造方法、半導体装置の製造装置及び記録媒体
JP5712902B2 (ja) 2011-11-10 2015-05-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
KR101305904B1 (ko) 2011-12-07 2013-09-09 주식회사 테스 반도체소자 제조방법
EP2788161A4 (en) 2011-12-08 2015-07-15 Inmold Biosystems As POLISHING ROUGH SUBSTRATES ASSISTED BY GLASS DEPOSITED BY CENTRIFUGATION
JP2013122493A (ja) 2011-12-09 2013-06-20 Furukawa Electric Co Ltd:The 光分岐素子および光分岐回路
JP2013154315A (ja) 2012-01-31 2013-08-15 Ricoh Co Ltd 薄膜形成装置、薄膜形成方法、電気−機械変換素子、液体吐出ヘッド、およびインクジェット記録装置
US8993458B2 (en) 2012-02-13 2015-03-31 Applied Materials, Inc. Methods and apparatus for selective oxidation of a substrate
US8871656B2 (en) 2012-03-05 2014-10-28 Applied Materials, Inc. Flowable films using alternative silicon precursors
JP6007715B2 (ja) * 2012-03-29 2016-10-12 東京エレクトロン株式会社 トラップ機構、排気系及び成膜装置
US20130288485A1 (en) 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US20130337171A1 (en) 2012-06-13 2013-12-19 Qualcomm Mems Technologies, Inc. N2 purged o-ring for chamber in chamber ald system
KR101224520B1 (ko) 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버
KR20140003776A (ko) 2012-06-28 2014-01-10 주식회사 메카로닉스 고 저항 산화아연 박막의 제조방법
US20150309073A1 (en) 2012-07-13 2015-10-29 Northwestern University Multifunctional graphene coated scanning tips
JP2014019912A (ja) 2012-07-19 2014-02-03 Tokyo Electron Ltd タングステン膜の成膜方法
US8846448B2 (en) 2012-08-10 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Warpage control in a package-on-package structure
WO2014030371A1 (ja) 2012-08-24 2014-02-27 独立行政法人科学技術振興機構 ゲルマニウム層上に窒化酸化アルミニウム膜を備える半導体構造およびその製造方法
KR102002782B1 (ko) 2012-09-10 2019-07-23 삼성전자주식회사 팽창성 부재를 사용하는 반도체 장치의 제조 방법
JP2014060256A (ja) 2012-09-18 2014-04-03 Tokyo Electron Ltd 処理システム
US9157730B2 (en) 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
US20150322286A1 (en) 2012-11-27 2015-11-12 The Regents Of The University Of California Polymerized Metal-Organic Material for Printable Photonic Devices
US9123577B2 (en) 2012-12-12 2015-09-01 Sandisk Technologies Inc. Air gap isolation in non-volatile memory using sacrificial films
JP2014141739A (ja) 2012-12-27 2014-08-07 Tokyo Electron Ltd 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス
US20140216498A1 (en) 2013-02-06 2014-08-07 Kwangduk Douglas Lee Methods of dry stripping boron-carbon films
WO2014130304A1 (en) 2013-02-19 2014-08-28 Applied Materials, Inc. Hdd patterning using flowable cvd film
KR101443792B1 (ko) 2013-02-20 2014-09-26 국제엘렉트릭코리아 주식회사 건식 기상 식각 장치
KR20140106977A (ko) 2013-02-27 2014-09-04 삼성전자주식회사 고성능 금속 산화물 반도체 박막 트랜지스터 및 그 제조방법
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9680095B2 (en) 2013-03-13 2017-06-13 Macronix International Co., Ltd. Resistive RAM and fabrication method
US9378994B2 (en) 2013-03-15 2016-06-28 Applied Materials, Inc. Multi-position batch load lock apparatus and systems and methods including same
JP6703937B2 (ja) 2013-03-15 2020-06-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板堆積システム、ロボット移送装置、及び電子デバイス製造のための方法
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US10224258B2 (en) 2013-03-22 2019-03-05 Applied Materials, Inc. Method of curing thermoplastics with microwave energy
US9538586B2 (en) 2013-04-26 2017-01-03 Applied Materials, Inc. Method and apparatus for microwave treatment of dielectric films
WO2014192871A1 (ja) 2013-05-31 2014-12-04 株式会社日立国際電気 基板処理装置、半導体製造装置の製造方法及び炉口蓋体
KR101542803B1 (ko) 2013-07-09 2015-08-07 주식회사 네오세미텍 고온고압 송풍식 퍼지수단을 구비한 진공챔버 및 이를 이용한 세정방법
US9178103B2 (en) 2013-08-09 2015-11-03 Tsmc Solar Ltd. Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities
CN105453230B (zh) 2013-08-16 2019-06-14 应用材料公司 用六氟化钨(wf6)回蚀进行钨沉积
KR101825673B1 (ko) 2013-08-21 2018-02-05 어플라이드 머티어리얼스, 인코포레이티드 반도체 박막 제조들에서의 가변 주파수 마이크로파(vfm) 프로세스들 및 애플리케이션들
JP6226648B2 (ja) 2013-09-04 2017-11-08 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
US9396986B2 (en) 2013-10-04 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming a trench structure
JP6129712B2 (ja) 2013-10-24 2017-05-17 信越化学工業株式会社 過熱水蒸気処理装置
US9406547B2 (en) 2013-12-24 2016-08-02 Intel Corporation Techniques for trench isolation using flowable dielectric materials
CN103745978B (zh) 2014-01-03 2016-08-17 京东方科技集团股份有限公司 显示装置、阵列基板及其制作方法
US9257527B2 (en) 2014-02-14 2016-02-09 International Business Machines Corporation Nanowire transistor structures with merged source/drain regions using auxiliary pillars
US9818603B2 (en) 2014-03-06 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
KR101571715B1 (ko) 2014-04-23 2015-11-25 주식회사 풍산 고압 열처리를 이용한 스핀 온 글래스 절연막 형성방법
US10068845B2 (en) 2014-06-16 2018-09-04 Intel Corporation Seam healing of metal interconnects
CN104089491B (zh) 2014-07-03 2015-11-04 肇庆宏旺金属实业有限公司 退火炉的余热回收利用系统
US9257314B1 (en) 2014-07-31 2016-02-09 Poongsan Corporation Methods and apparatuses for deuterium recovery
JPWO2016038664A1 (ja) 2014-09-08 2017-04-27 三菱電機株式会社 半導体アニール装置
US9773865B2 (en) 2014-09-22 2017-09-26 International Business Machines Corporation Self-forming spacers using oxidation
US9362107B2 (en) 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
US20160118391A1 (en) 2014-10-22 2016-04-28 SanDisk Technologies, Inc. Deuterium anneal of semiconductor channels in a three-dimensional memory structure
KR102079501B1 (ko) 2014-10-24 2020-02-20 버슘머트리얼즈 유에스, 엘엘씨 규소-함유 필름의 증착을 위한 조성물 및 이를 사용하는 방법
US9543141B2 (en) 2014-12-09 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd Method for curing flowable layer
TW201639063A (zh) 2015-01-22 2016-11-01 應用材料股份有限公司 批量加熱和冷卻腔室或負載鎖定裝置
EP3460827B1 (en) 2015-02-06 2022-05-25 Versum Materials US, LLC Compositions and methods using same for carbon doped silicon containing films
WO2016130956A1 (en) 2015-02-13 2016-08-18 Alexander Otto Multifilament superconducting wire with high resistance sleeves
JP6826044B2 (ja) 2015-04-20 2021-02-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ バッファチャンバのウエハ加熱機構と支持ロボット
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US10443934B2 (en) 2015-05-08 2019-10-15 Varian Semiconductor Equipment Associates, Inc. Substrate handling and heating system
US9685303B2 (en) 2015-05-08 2017-06-20 Varian Semiconductor Equipment Associates, Inc. Apparatus for heating and processing a substrate
TWI826223B (zh) 2015-05-11 2023-12-11 美商應用材料股份有限公司 水平環繞式閘極與鰭式場效電晶體元件的隔離
KR101681190B1 (ko) 2015-05-15 2016-12-02 세메스 주식회사 기판 건조 장치 및 방법
WO2016191621A1 (en) 2015-05-27 2016-12-01 Applied Materials, Inc. Methods and apparatus for a microwave batch curing process
WO2016196105A1 (en) 2015-06-05 2016-12-08 Applied Materials, Inc. Susceptor position and rotation apparatus and methods of use
US9728430B2 (en) 2015-06-29 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with LED heating
US20160379854A1 (en) 2015-06-29 2016-12-29 Varian Semiconductor Equipment Associates, Inc. Vacuum Compatible LED Substrate Heater
US10170608B2 (en) 2015-06-30 2019-01-01 International Business Machines Corporation Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET
US9646850B2 (en) 2015-07-06 2017-05-09 Globalfoundries Inc. High-pressure anneal
US9484406B1 (en) 2015-09-03 2016-11-01 Applied Materials, Inc. Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
US9716142B2 (en) 2015-10-12 2017-07-25 International Business Machines Corporation Stacked nanowires
US9754840B2 (en) 2015-11-16 2017-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Horizontal gate-all-around device having wrapped-around source and drain
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
WO2017120102A1 (en) 2016-01-05 2017-07-13 Applied Materials, Inc. Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
US9570551B1 (en) 2016-02-05 2017-02-14 International Business Machines Corporation Replacement III-V or germanium nanowires by unilateral confined epitaxial growth
JP6240695B2 (ja) 2016-03-02 2017-11-29 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
KR101817215B1 (ko) * 2016-03-16 2018-01-11 세메스 주식회사 펌프 및 액 공급 장치
US11326253B2 (en) 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
TWI680535B (zh) 2016-06-14 2019-12-21 美商應用材料股份有限公司 金屬及含金屬化合物之氧化體積膨脹
US9933314B2 (en) 2016-06-30 2018-04-03 Varian Semiconductor Equipment Associates, Inc. Semiconductor workpiece temperature measurement system
US9876019B1 (en) 2016-07-13 2018-01-23 Globalfoundries Singapore Pte. Ltd. Integrated circuits with programmable memory and methods for producing the same
US20180087418A1 (en) 2016-09-22 2018-03-29 Castrol Limited Fluid Method and System
JP2019530242A (ja) 2016-09-30 2019-10-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 自己整合ビアの形成方法
US10249525B2 (en) 2016-10-03 2019-04-02 Applied Materials, Inc. Dynamic leveling process heater lift
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
KR102864010B1 (ko) 2017-03-31 2025-09-23 어플라이드 머티어리얼스, 인코포레이티드 고종횡비 트렌치들을 비정질 실리콘 막으로 갭충전하기 위한 2-단계 프로세스
KR20230146121A (ko) 2017-04-21 2023-10-18 어플라이드 머티어리얼스, 인코포레이티드 개선된 전극 조립체
WO2018204078A1 (en) 2017-05-01 2018-11-08 Applied Materials, Inc. High pressure anneal chamber with vacuum isolation and pre-processing environment
JP7175283B2 (ja) 2017-05-03 2022-11-18 アプライド マテリアルズ インコーポレイテッド 高温セラミックヒータ上の集積化基板温度測定
JP6918146B2 (ja) * 2017-05-19 2021-08-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 液体および固体の排出物を収集して後に反応させて気体の排出物にする装置
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP7184810B6 (ja) 2017-06-02 2022-12-16 アプライド マテリアルズ インコーポレイテッド 基板に堆積された膜の品質改善
US10179941B1 (en) 2017-07-14 2019-01-15 Applied Materials, Inc. Gas delivery system for high pressure processing chamber
US10096516B1 (en) 2017-08-18 2018-10-09 Applied Materials, Inc. Method of forming a barrier layer for through via applications
WO2019036157A1 (en) 2017-08-18 2019-02-21 Applied Materials, Inc. HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
WO2019099125A1 (en) 2017-11-16 2019-05-23 Applied Materials, Inc. High pressure steam anneal processing apparatus
WO2019099255A2 (en) 2017-11-17 2019-05-23 Applied Materials, Inc. Condenser system for high pressure processing system
JP7299898B2 (ja) 2018-01-24 2023-06-28 アプライド マテリアルズ インコーポレイテッド 高圧アニールを用いたシーム修復
SG11202006237RA (en) 2018-02-22 2020-09-29 Applied Materials Inc Method for processing a mask substrate to enable better film quality
US11114333B2 (en) 2018-02-22 2021-09-07 Micromaterials, LLC Method for depositing and reflow of a high quality etch resistant gapfill dielectric film
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
WO2019204124A1 (en) 2018-04-20 2019-10-24 Applied Materials, Inc. Ceramic wafer heater with integrated pressurized helium cooling
US11499666B2 (en) 2018-05-25 2022-11-15 Applied Materials, Inc. Precision dynamic leveling mechanism with long motion capability
US11434569B2 (en) 2018-05-25 2022-09-06 Applied Materials, Inc. Ground path systems for providing a shorter and symmetrical ground path
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10790183B2 (en) 2018-06-05 2020-09-29 Applied Materials, Inc. Selective oxidation for 3D device isolation
US20200035513A1 (en) 2018-07-25 2020-01-30 Applied Materials, Inc. Processing apparatus
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070012402A1 (en) * 2003-07-08 2007-01-18 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
US20050250347A1 (en) * 2003-12-31 2005-11-10 Bailey Christopher M Method and apparatus for maintaining by-product volatility in deposition process
US20100012292A1 (en) * 2007-03-31 2010-01-21 Tokyo Electron Limited Trap apparatus, exhaust system and processing system using same
US20150000870A1 (en) * 2013-06-24 2015-01-01 Ebara Corporation Exhaust gas abatement system
CN104047676A (zh) * 2014-06-14 2014-09-17 马根昌 改良式对冲消声器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023036563A (ja) * 2021-09-02 2023-03-14 ウォニク アイピーエス カンパニー リミテッド 基板処理装置
JP7372408B2 (ja) 2021-09-02 2023-10-31 ウォニク アイピーエス カンパニー リミテッド 基板処理装置

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