KR102724302B1 - 가스 저감 장치 - Google Patents
가스 저감 장치 Download PDFInfo
- Publication number
- KR102724302B1 KR102724302B1 KR1020217006817A KR20217006817A KR102724302B1 KR 102724302 B1 KR102724302 B1 KR 102724302B1 KR 1020217006817 A KR1020217006817 A KR 1020217006817A KR 20217006817 A KR20217006817 A KR 20217006817A KR 102724302 B1 KR102724302 B1 KR 102724302B1
- Authority
- KR
- South Korea
- Prior art keywords
- silencer
- port
- volume
- conduit
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
- B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
- B01D53/0407—Constructional details of adsorbing systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Pipeline Systems (AREA)
- Treating Waste Gases (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/055,929 US10675581B2 (en) | 2018-08-06 | 2018-08-06 | Gas abatement apparatus |
| US16/055,929 | 2018-08-06 | ||
| PCT/US2019/040195 WO2020033081A1 (en) | 2018-08-06 | 2019-07-01 | Gas abatement apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210030485A KR20210030485A (ko) | 2021-03-17 |
| KR102724302B1 true KR102724302B1 (ko) | 2024-11-01 |
Family
ID=69228166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217006817A Active KR102724302B1 (ko) | 2018-08-06 | 2019-07-01 | 가스 저감 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10675581B2 (enExample) |
| JP (1) | JP7510406B2 (enExample) |
| KR (1) | KR102724302B1 (enExample) |
| CN (1) | CN112640074B (enExample) |
| TW (1) | TWI840393B (enExample) |
| WO (1) | WO2020033081A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10224224B2 (en) * | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| WO2019036157A1 (en) | 2017-08-18 | 2019-02-21 | Applied Materials, Inc. | HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| SG11202001450UA (en) | 2017-09-12 | 2020-03-30 | Applied Materials Inc | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
| EP4321649B1 (en) | 2017-11-11 | 2025-08-20 | Micromaterials LLC | Gas delivery system for high pressure processing chamber |
| WO2019099255A2 (en) | 2017-11-17 | 2019-05-23 | Applied Materials, Inc. | Condenser system for high pressure processing system |
| EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS |
| JP7036642B2 (ja) * | 2018-03-23 | 2022-03-15 | 株式会社Screenホールディングス | 基板処理装置及びその排気方法 |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| JP2022507390A (ja) | 2018-11-16 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | 強化拡散プロセスを使用する膜の堆積 |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| US20230072156A1 (en) * | 2021-09-02 | 2023-03-09 | Wonik Ips Co., Ltd. | Substrate processing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090018688A1 (en) * | 2007-06-15 | 2009-01-15 | Applied Materials, Inc. | Methods and systems for designing and validating operation of abatement systems |
| JP2009212178A (ja) * | 2008-03-03 | 2009-09-17 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
| CN104047676A (zh) * | 2014-06-14 | 2014-09-17 | 马根昌 | 改良式对冲消声器 |
Family Cites Families (328)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4524587A (en) | 1967-01-10 | 1985-06-25 | Kantor Frederick W | Rotary thermodynamic apparatus and method |
| US3758316A (en) | 1971-03-30 | 1973-09-11 | Du Pont | Refractory materials and process for making same |
| US3749383A (en) | 1971-04-29 | 1973-07-31 | Rca Corp | Apparatus for processing semiconductor devices |
| US4576652A (en) | 1984-07-12 | 1986-03-18 | International Business Machines Corporation | Incoherent light annealing of gallium arsenide substrate |
| JPH0748489B2 (ja) | 1987-07-27 | 1995-05-24 | 富士通株式会社 | プラズマ処理装置 |
| US4879259A (en) | 1987-09-28 | 1989-11-07 | The Board Of Trustees Of The Leland Stanford Junion University | Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure |
| CA1308496C (en) | 1988-02-18 | 1992-10-06 | Rajiv V. Joshi | Deposition of tungsten on silicon in a non-self-limiting cvd process |
| US5114513A (en) | 1988-10-27 | 1992-05-19 | Omron Tateisi Electronics Co. | Optical device and manufacturing method thereof |
| US5167717A (en) | 1989-02-15 | 1992-12-01 | Charles Boitnott | Apparatus and method for processing a semiconductor wafer |
| JP2730695B2 (ja) | 1989-04-10 | 1998-03-25 | 忠弘 大見 | タングステン膜の成膜装置 |
| US5126117A (en) * | 1990-05-22 | 1992-06-30 | Custom Engineered Materials, Inc. | Device for preventing accidental releases of hazardous gases |
| US5175123A (en) | 1990-11-13 | 1992-12-29 | Motorola, Inc. | High-pressure polysilicon encapsulated localized oxidation of silicon |
| US5050540A (en) | 1991-01-29 | 1991-09-24 | Arne Lindberg | Method of gas blanketing a boiler |
| US5314541A (en) | 1991-05-28 | 1994-05-24 | Tokyo Electron Limited | Reduced pressure processing system and reduced pressure processing method |
| JPH0521310A (ja) | 1991-07-11 | 1993-01-29 | Canon Inc | 微細パタン形成方法 |
| JPH05129296A (ja) | 1991-11-05 | 1993-05-25 | Fujitsu Ltd | 導電膜の平坦化方法 |
| US5319212A (en) | 1992-10-07 | 1994-06-07 | Genus, Inc. | Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors |
| US5607002A (en) | 1993-04-28 | 1997-03-04 | Advanced Delivery & Chemical Systems, Inc. | Chemical refill system for high purity chemicals |
| US5578132A (en) | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
| JPH0766424A (ja) | 1993-08-20 | 1995-03-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US5880041A (en) | 1994-05-27 | 1999-03-09 | Motorola Inc. | Method for forming a dielectric layer using high pressure |
| US5597439A (en) | 1994-10-26 | 1997-01-28 | Applied Materials, Inc. | Process gas inlet and distribution passages |
| US5808245A (en) * | 1995-01-03 | 1998-09-15 | Donaldson Company, Inc. | Vertical mount catalytic converter muffler |
| JPH08195493A (ja) | 1995-01-13 | 1996-07-30 | Toshiba Corp | 薄膜トランジスタの製造方法 |
| US5620524A (en) | 1995-02-27 | 1997-04-15 | Fan; Chiko | Apparatus for fluid delivery in chemical vapor deposition systems |
| US5858051A (en) | 1995-05-08 | 1999-01-12 | Toshiba Machine Co., Ltd. | Method of manufacturing optical waveguide |
| JP2872637B2 (ja) * | 1995-07-10 | 1999-03-17 | アプライド マテリアルズ インコーポレイテッド | マイクロ波プラズマベースアプリケータ |
| US5857368A (en) | 1995-10-06 | 1999-01-12 | Applied Materials, Inc. | Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion |
| JPH09296267A (ja) | 1995-11-21 | 1997-11-18 | Applied Materials Inc | 高圧押出しによる、半導体基板における金属パスの製造装置および方法 |
| US5677230A (en) | 1995-12-01 | 1997-10-14 | Motorola | Method of making wide bandgap semiconductor devices |
| US5895274A (en) | 1996-01-22 | 1999-04-20 | Micron Technology, Inc. | High-pressure anneal process for integrated circuits |
| KR980012044A (ko) | 1996-03-01 | 1998-04-30 | 히가시 데츠로 | 기판건조장치 및 기판건조방법 |
| US5998305A (en) | 1996-03-29 | 1999-12-07 | Praxair Technology, Inc. | Removal of carbon from substrate surfaces |
| US5738915A (en) | 1996-09-19 | 1998-04-14 | Lambda Technologies, Inc. | Curing polymer layers on semiconductor substrates using variable frequency microwave energy |
| US6444037B1 (en) | 1996-11-13 | 2002-09-03 | Applied Materials, Inc. | Chamber liner for high temperature processing chamber |
| US6082950A (en) | 1996-11-18 | 2000-07-04 | Applied Materials, Inc. | Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding |
| US5886864A (en) | 1996-12-02 | 1999-03-23 | Applied Materials, Inc. | Substrate support member for uniform heating of a substrate |
| US6136664A (en) | 1997-08-07 | 2000-10-24 | International Business Machines Corporation | Filling of high aspect ratio trench isolation |
| US20030049372A1 (en) | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
| US5963817A (en) | 1997-10-16 | 1999-10-05 | International Business Machines Corporation | Bulk and strained silicon on insulator using local selective oxidation |
| JP3199006B2 (ja) | 1997-11-18 | 2001-08-13 | 日本電気株式会社 | 層間絶縁膜の形成方法および絶縁膜形成装置 |
| US6442980B2 (en) | 1997-11-26 | 2002-09-03 | Chart Inc. | Carbon dioxide dry cleaning system |
| US6846739B1 (en) | 1998-02-27 | 2005-01-25 | Micron Technology, Inc. | MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer |
| US6164412A (en) * | 1998-04-03 | 2000-12-26 | Arvin Industries, Inc. | Muffler |
| KR100286339B1 (ko) * | 1998-05-14 | 2001-05-02 | 김영환 | 반도체웨이퍼증착장비의펌프압력측정장치 |
| US6719516B2 (en) | 1998-09-28 | 2004-04-13 | Applied Materials, Inc. | Single wafer load lock with internal wafer transport |
| US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
| JP2000256856A (ja) * | 1999-03-11 | 2000-09-19 | Tokyo Electron Ltd | 処理装置及び処理装置用真空排気システム及び減圧cvd装置及び減圧cvd装置用真空排気システム及びトラップ装置 |
| US6468490B1 (en) * | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
| US6334266B1 (en) | 1999-09-20 | 2002-01-01 | S.C. Fluids, Inc. | Supercritical fluid drying system and method of use |
| US6612317B2 (en) | 2000-04-18 | 2003-09-02 | S.C. Fluids, Inc | Supercritical fluid delivery and recovery system for semiconductor wafer processing |
| DE69940114D1 (de) | 1999-08-17 | 2009-01-29 | Applied Materials Inc | Oberflächenbehandlung von kohlenstoffdotierten SiO2-Filmen zur Erhöhung der Stabilität während der O2-Veraschung |
| US6299753B1 (en) | 1999-09-01 | 2001-10-09 | Applied Materials, Inc. | Double pressure vessel chemical dispenser unit |
| JP2001110729A (ja) * | 1999-10-06 | 2001-04-20 | Mitsubishi Heavy Ind Ltd | 半導体素子の連続製造装置 |
| US20030148631A1 (en) | 1999-11-08 | 2003-08-07 | Taiwan Semiconductor Manufacturing Company | Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile |
| US6500603B1 (en) | 1999-11-11 | 2002-12-31 | Mitsui Chemicals, Inc. | Method for manufacturing polymer optical waveguide |
| TW484170B (en) | 1999-11-30 | 2002-04-21 | Applied Materials Inc | Integrated modular processing platform |
| US6150286A (en) | 2000-01-03 | 2000-11-21 | Advanced Micro Devices, Inc. | Method of making an ultra thin silicon nitride film |
| US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| US6319766B1 (en) | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
| JP2001250787A (ja) | 2000-03-06 | 2001-09-14 | Hitachi Kokusai Electric Inc | 基板処理装置および基板処理方法 |
| US20040025908A1 (en) | 2000-04-18 | 2004-02-12 | Stephen Douglas | Supercritical fluid delivery system for semiconductor wafer processing |
| US7166524B2 (en) | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
| US6852167B2 (en) | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
| JP4335469B2 (ja) | 2001-03-22 | 2009-09-30 | 株式会社荏原製作所 | 真空排気装置のガス循環量調整方法及び装置 |
| US6797336B2 (en) | 2001-03-22 | 2004-09-28 | Ambp Tech Corporation | Multi-component substances and processes for preparation thereof |
| TW544797B (en) | 2001-04-17 | 2003-08-01 | Kobe Steel Ltd | High-pressure processing apparatus |
| JP2002319571A (ja) | 2001-04-20 | 2002-10-31 | Kawasaki Microelectronics Kk | エッチング槽の前処理方法及び半導体装置の製造方法 |
| US7080651B2 (en) | 2001-05-17 | 2006-07-25 | Dainippon Screen Mfg. Co., Ltd. | High pressure processing apparatus and method |
| US6752585B2 (en) | 2001-06-13 | 2004-06-22 | Applied Materials Inc | Method and apparatus for transferring a semiconductor substrate |
| EP1271636A1 (en) | 2001-06-22 | 2003-01-02 | Infineon Technologies AG | Thermal oxidation process control by controlling oxidation agent partial pressure |
| US20080268635A1 (en) | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
| US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| JP2003051474A (ja) | 2001-08-03 | 2003-02-21 | Kobe Steel Ltd | 高圧処理装置 |
| US6531412B2 (en) | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
| US6781801B2 (en) | 2001-08-10 | 2004-08-24 | Seagate Technology Llc | Tunneling magnetoresistive sensor with spin polarized current injection |
| JP2003077974A (ja) | 2001-08-31 | 2003-03-14 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
| US6619304B2 (en) | 2001-09-13 | 2003-09-16 | Micell Technologies, Inc. | Pressure chamber assembly including non-mechanical drive means |
| US7105061B1 (en) | 2001-11-07 | 2006-09-12 | Novellus Systems, Inc. | Method and apparatus for sealing substrate load port in a high pressure reactor |
| US20030098069A1 (en) | 2001-11-26 | 2003-05-29 | Sund Wesley E. | High purity fluid delivery system |
| JP2003166065A (ja) | 2001-11-30 | 2003-06-13 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
| JP2003188387A (ja) | 2001-12-20 | 2003-07-04 | Sony Corp | 薄膜トランジスタ及びその製造方法 |
| US6848458B1 (en) | 2002-02-05 | 2005-02-01 | Novellus Systems, Inc. | Apparatus and methods for processing semiconductor substrates using supercritical fluids |
| US6632325B2 (en) | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
| US6835503B2 (en) | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
| US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
| US7638727B2 (en) | 2002-05-08 | 2009-12-29 | Btu International Inc. | Plasma-assisted heat treatment |
| US6846380B2 (en) | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
| US7521089B2 (en) | 2002-06-13 | 2009-04-21 | Tokyo Electron Limited | Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers |
| US20070243317A1 (en) | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
| US6843882B2 (en) * | 2002-07-15 | 2005-01-18 | Applied Materials, Inc. | Gas flow control in a wafer processing system having multiple chambers for performing same process |
| US7335609B2 (en) | 2004-08-27 | 2008-02-26 | Applied Materials, Inc. | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials |
| US20070212850A1 (en) | 2002-09-19 | 2007-09-13 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
| JP2004127958A (ja) | 2002-09-30 | 2004-04-22 | Kyoshin Engineering:Kk | 高圧アニール水蒸気処理を行なう装置及び方法 |
| US20040060519A1 (en) | 2002-10-01 | 2004-04-01 | Seh America Inc. | Quartz to quartz seal using expanded PTFE gasket material |
| US6889508B2 (en) | 2002-10-02 | 2005-05-10 | The Boc Group, Inc. | High pressure CO2 purification and supply system |
| US7270761B2 (en) | 2002-10-18 | 2007-09-18 | Appleid Materials, Inc | Fluorine free integrated process for etching aluminum including chamber dry clean |
| JPWO2004049414A1 (ja) | 2002-11-25 | 2006-03-30 | 光洋サーモシステム株式会社 | 半導体処理装置用電気ヒータ |
| US20040112409A1 (en) | 2002-12-16 | 2004-06-17 | Supercritical Sysems, Inc. | Fluoride in supercritical fluid for photoresist and residue removal |
| WO2004070796A2 (en) | 2003-02-04 | 2004-08-19 | Applied Materials, Inc. | Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure |
| JP3956049B2 (ja) | 2003-03-07 | 2007-08-08 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
| US7079760B2 (en) | 2003-03-17 | 2006-07-18 | Tokyo Electron Limited | Processing system and method for thermally treating a substrate |
| US7086638B2 (en) | 2003-05-13 | 2006-08-08 | Applied Materials, Inc. | Methods and apparatus for sealing an opening of a processing chamber |
| US6939794B2 (en) | 2003-06-17 | 2005-09-06 | Micron Technology, Inc. | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device |
| US7226512B2 (en) | 2003-06-18 | 2007-06-05 | Ekc Technology, Inc. | Load lock system for supercritical fluid cleaning |
| WO2005007283A2 (en) * | 2003-07-08 | 2005-01-27 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
| JP4173781B2 (ja) | 2003-08-13 | 2008-10-29 | 株式会社神戸製鋼所 | 高圧処理方法 |
| US20050136684A1 (en) | 2003-12-23 | 2005-06-23 | Applied Materials, Inc. | Gap-fill techniques |
| TW200527491A (en) * | 2003-12-23 | 2005-08-16 | John C Schumacher | Exhaust conditioning system for semiconductor reactor |
| US7158221B2 (en) | 2003-12-23 | 2007-01-02 | Applied Materials, Inc. | Method and apparatus for performing limited area spectral analysis |
| US20050250347A1 (en) * | 2003-12-31 | 2005-11-10 | Bailey Christopher M | Method and apparatus for maintaining by-product volatility in deposition process |
| US7030468B2 (en) | 2004-01-16 | 2006-04-18 | International Business Machines Corporation | Low k and ultra low k SiCOH dielectric films and methods to form the same |
| US20050187647A1 (en) | 2004-02-19 | 2005-08-25 | Kuo-Hua Wang | Intelligent full automation controlled flow for a semiconductor furnace tool |
| JP4393268B2 (ja) | 2004-05-20 | 2010-01-06 | 株式会社神戸製鋼所 | 微細構造体の乾燥方法 |
| US20050269291A1 (en) | 2004-06-04 | 2005-12-08 | Tokyo Electron Limited | Method of operating a processing system for treating a substrate |
| US7521378B2 (en) | 2004-07-01 | 2009-04-21 | Micron Technology, Inc. | Low temperature process for polysilazane oxidation/densification |
| US7491658B2 (en) | 2004-10-13 | 2009-02-17 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
| US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
| CN101061253B (zh) | 2004-11-22 | 2010-12-22 | 应用材料股份有限公司 | 使用批式制程腔室的基材处理装置 |
| KR100697280B1 (ko) * | 2005-02-07 | 2007-03-20 | 삼성전자주식회사 | 반도체 제조 설비의 압력 조절 방법 |
| US20060176928A1 (en) * | 2005-02-08 | 2006-08-10 | Tokyo Electron Limited | Substrate processing apparatus, control method adopted in substrate processing apparatus and program |
| US9576824B2 (en) | 2005-02-22 | 2017-02-21 | Spts Technologies Limited | Etching chamber with subchamber |
| US7211525B1 (en) | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
| WO2006101315A1 (en) | 2005-03-21 | 2006-09-28 | Pkl Co., Ltd. | Device and method for cleaning photomask |
| US20060226117A1 (en) | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
| US20120060868A1 (en) | 2005-06-07 | 2012-03-15 | Donald Gray | Microscale fluid delivery system |
| ATE419560T1 (de) | 2005-06-10 | 2009-01-15 | Obducat Ab | Kopieren eines musters mit hilfe eines zwischenstempels |
| JP4747693B2 (ja) | 2005-06-28 | 2011-08-17 | 住友電気工業株式会社 | 樹脂体を形成する方法、光導波路のための構造を形成する方法、および光学部品を形成する方法 |
| US7361231B2 (en) | 2005-07-01 | 2008-04-22 | Ekc Technology, Inc. | System and method for mid-pressure dense phase gas and ultrasonic cleaning |
| JP5117856B2 (ja) | 2005-08-05 | 2013-01-16 | 株式会社日立国際電気 | 基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法 |
| US7534080B2 (en) | 2005-08-26 | 2009-05-19 | Ascentool, Inc. | Vacuum processing and transfer system |
| US7531404B2 (en) | 2005-08-30 | 2009-05-12 | Intel Corporation | Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer |
| KR100696178B1 (ko) | 2005-09-13 | 2007-03-20 | 한국전자통신연구원 | 광 도파로 마스터 및 그 제조 방법 |
| US8926731B2 (en) | 2005-09-13 | 2015-01-06 | Rasirc | Methods and devices for producing high purity steam |
| WO2007043383A1 (ja) | 2005-10-07 | 2007-04-19 | Nikon Corporation | 微小構造体およびその製造方法 |
| US7794667B2 (en) | 2005-10-19 | 2010-09-14 | Moore Epitaxial, Inc. | Gas ring and method of processing substrates |
| US7387968B2 (en) | 2005-11-08 | 2008-06-17 | Tokyo Electron Limited | Batch photoresist dry strip and ash system and process |
| US20070187386A1 (en) | 2006-02-10 | 2007-08-16 | Poongsan Microtec Corporation | Methods and apparatuses for high pressure gas annealing |
| US7578258B2 (en) | 2006-03-03 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for selective pre-coating of a plasma processing chamber |
| JP2007242791A (ja) | 2006-03-07 | 2007-09-20 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| WO2007133595A2 (en) | 2006-05-08 | 2007-11-22 | The Board Of Trustees Of The University Of Illinois | Integrated vacuum absorption steam cycle gas separation |
| US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
| US7650965B2 (en) * | 2006-06-09 | 2010-01-26 | Emcon Technologies Llc | Exhaust system |
| JP2008073611A (ja) | 2006-09-21 | 2008-04-03 | Dainippon Screen Mfg Co Ltd | 高圧処理装置 |
| JP4814038B2 (ja) | 2006-09-25 | 2011-11-09 | 株式会社日立国際電気 | 基板処理装置および反応容器の着脱方法 |
| WO2008047886A1 (en) | 2006-10-13 | 2008-04-24 | Asahi Glass Co., Ltd. | Method of smoothing surface of substrate for euv mask blank, and euv mask blank obtained by the method |
| US7790587B2 (en) | 2006-11-07 | 2010-09-07 | Intel Corporation | Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby |
| JP2008153635A (ja) | 2006-11-22 | 2008-07-03 | Toshiba Matsushita Display Technology Co Ltd | Mos型半導体素子の製造方法 |
| US20080169183A1 (en) | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
| JP2008192642A (ja) | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | 基板処理装置 |
| US20080233404A1 (en) | 2007-03-22 | 2008-09-25 | 3M Innovative Properties Company | Microreplication tools and patterns using laser induced thermal embossing |
| JP5135856B2 (ja) * | 2007-03-31 | 2013-02-06 | 東京エレクトロン株式会社 | トラップ装置、排気系及びこれを用いた処理システム |
| US20080241384A1 (en) | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
| DE102007017641A1 (de) | 2007-04-13 | 2008-10-16 | Infineon Technologies Ag | Aushärtung von Schichten am Halbleitermodul mittels elektromagnetischer Felder |
| JP2010525530A (ja) | 2007-04-30 | 2010-07-22 | アイファイアー・アイピー・コーポレーション | 厚膜誘電性エレクトロルミネセントディスプレイ用の積層厚膜誘電体構造 |
| KR101560705B1 (ko) * | 2007-05-25 | 2015-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 전자 디바이스 제조 시스템들을 조립하고 작동시키는 방법들 및 장치 |
| KR101442238B1 (ko) | 2007-07-26 | 2014-09-23 | 주식회사 풍산마이크로텍 | 고압 산소 열처리를 통한 반도체 소자의 제조방법 |
| JP5028193B2 (ja) * | 2007-09-05 | 2012-09-19 | 株式会社日立ハイテクノロジーズ | 半導体製造装置における被処理体の搬送方法 |
| US7951728B2 (en) | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
| US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
| US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
| US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
| US8668868B2 (en) * | 2007-10-26 | 2014-03-11 | Applied Materials, Inc. | Methods and apparatus for smart abatement using an improved fuel circuit |
| US7651959B2 (en) | 2007-12-03 | 2010-01-26 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
| US7776740B2 (en) | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
| JP4815464B2 (ja) | 2008-03-31 | 2011-11-16 | 株式会社日立製作所 | 微細構造転写スタンパ及び微細構造転写装置 |
| US7655532B1 (en) | 2008-07-25 | 2010-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI film property using SOD post-treatment |
| JP2010056541A (ja) | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US20100089315A1 (en) | 2008-09-22 | 2010-04-15 | Applied Materials, Inc. | Shutter disk for physical vapor deposition chamber |
| US8153533B2 (en) | 2008-09-24 | 2012-04-10 | Lam Research | Methods and systems for preventing feature collapse during microelectronic topography fabrication |
| KR20100035000A (ko) | 2008-09-25 | 2010-04-02 | 삼성전자주식회사 | 서로 다른 종횡비를 갖는 소자 분리 트렌치 갭필 방법 및 그를 이용한 반도체 소자 |
| US7891228B2 (en) | 2008-11-18 | 2011-02-22 | Mks Instruments, Inc. | Dual-mode mass flow verification and mass flow delivery system and method |
| US8557712B1 (en) | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
| KR20100082170A (ko) | 2009-01-08 | 2010-07-16 | 삼성전자주식회사 | 실리콘 산화막 패턴 및 소자 분리막 형성 방법 |
| JP5883652B2 (ja) | 2009-02-04 | 2016-03-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマ処理チャンバのための高周波リターンデバイスおよびプラズマ処理システム |
| JP2010205854A (ja) | 2009-03-02 | 2010-09-16 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
| JP4523661B1 (ja) | 2009-03-10 | 2010-08-11 | 三井造船株式会社 | 原子層堆積装置及び薄膜形成方法 |
| JP4564570B2 (ja) | 2009-03-10 | 2010-10-20 | 三井造船株式会社 | 原子層堆積装置 |
| FR2944147B1 (fr) | 2009-04-02 | 2011-09-23 | Saint Gobain | Procede de fabrication d'une structure a surface externe texturee pour dispositif a diode electroluminescente organique et struture a surface externe texturee |
| US20100304027A1 (en) | 2009-05-27 | 2010-12-02 | Applied Materials, Inc. | Substrate processing system and methods thereof |
| JP4415062B1 (ja) | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
| KR20110000960A (ko) | 2009-06-29 | 2011-01-06 | 삼성전자주식회사 | 반도체 칩, 스택 모듈, 메모리 카드 및 그 제조 방법 |
| US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
| JP2011066100A (ja) | 2009-09-16 | 2011-03-31 | Bridgestone Corp | 光硬化性転写シート、及びこれを用いた凹凸パターンの形成方法 |
| US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
| CN103151266B (zh) | 2009-11-20 | 2016-08-03 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法 |
| US20110151677A1 (en) | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
| JP2013517616A (ja) | 2010-01-06 | 2013-05-16 | アプライド マテリアルズ インコーポレイテッド | 酸化物ライナを使用する流動可能な誘電体 |
| US8304351B2 (en) | 2010-01-07 | 2012-11-06 | Applied Materials, Inc. | In-situ ozone cure for radical-component CVD |
| EP2526339A4 (en) | 2010-01-21 | 2015-03-11 | Powerdyne Inc | PRODUCTION OF STEAM FROM A CARBON SUBSTANCE |
| US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
| KR101853802B1 (ko) | 2010-03-05 | 2018-05-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 라디칼성분 cvd에 의한 컨포멀 층들 |
| CN101871043B (zh) | 2010-06-25 | 2012-07-18 | 东莞市康汇聚线材科技有限公司 | 一种退火炉蒸汽发生器及其控制方法 |
| US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
| JP2012049446A (ja) | 2010-08-30 | 2012-03-08 | Toshiba Corp | 超臨界乾燥方法及び超臨界乾燥システム |
| EP2426720A1 (en) | 2010-09-03 | 2012-03-07 | Applied Materials, Inc. | Staggered thin film transistor and method of forming the same |
| TW201216331A (en) | 2010-10-05 | 2012-04-16 | Applied Materials Inc | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration |
| JP5806827B2 (ja) | 2011-03-18 | 2015-11-10 | 東京エレクトロン株式会社 | ゲートバルブ装置及び基板処理装置並びにその基板処理方法 |
| JP5450494B2 (ja) | 2011-03-25 | 2014-03-26 | 株式会社東芝 | 半導体基板の超臨界乾燥方法 |
| WO2012134025A1 (ko) | 2011-03-25 | 2012-10-04 | Lee Seo Young | 광도파로 및 그 제조방법 |
| US20120252210A1 (en) | 2011-03-30 | 2012-10-04 | Tokyo Electron Limited | Method for modifying metal cap layers in semiconductor devices |
| JP6048400B2 (ja) | 2011-03-30 | 2016-12-21 | 大日本印刷株式会社 | 超臨界乾燥装置及び超臨界乾燥方法 |
| JP5759782B2 (ja) * | 2011-05-11 | 2015-08-05 | 川崎重工業株式会社 | 湿式排ガス浄化装置 |
| US9299581B2 (en) | 2011-05-12 | 2016-03-29 | Applied Materials, Inc. | Methods of dry stripping boron-carbon films |
| WO2012165377A1 (ja) | 2011-05-30 | 2012-12-06 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
| JP6085423B2 (ja) | 2011-05-30 | 2017-02-22 | 株式会社東芝 | 基板処理方法、基板処理装置および記憶媒体 |
| US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
| GB201110117D0 (en) | 2011-06-16 | 2011-07-27 | Fujifilm Mfg Europe Bv | method and device for manufacturing a barrie layer on a flexible substrate |
| US9536763B2 (en) * | 2011-06-28 | 2017-01-03 | Brooks Automation, Inc. | Semiconductor stocker systems and methods |
| WO2013008982A1 (ko) | 2011-07-14 | 2013-01-17 | 엘티씨 (주) | 높은 광추출 성능을 갖는 무기 산란막 {inorganic scattering films having high light extraction performance} |
| JPWO2013065771A1 (ja) | 2011-11-01 | 2015-04-02 | 株式会社日立国際電気 | 半導体装置の製造方法、半導体装置の製造装置及び記録媒体 |
| JP5712902B2 (ja) | 2011-11-10 | 2015-05-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| KR101305904B1 (ko) | 2011-12-07 | 2013-09-09 | 주식회사 테스 | 반도체소자 제조방법 |
| EP2788161A4 (en) | 2011-12-08 | 2015-07-15 | Inmold Biosystems As | POLISHING ROUGH SUBSTRATES ASSISTED BY GLASS DEPOSITED BY CENTRIFUGATION |
| JP2013122493A (ja) | 2011-12-09 | 2013-06-20 | Furukawa Electric Co Ltd:The | 光分岐素子および光分岐回路 |
| JP2013154315A (ja) | 2012-01-31 | 2013-08-15 | Ricoh Co Ltd | 薄膜形成装置、薄膜形成方法、電気−機械変換素子、液体吐出ヘッド、およびインクジェット記録装置 |
| US8993458B2 (en) | 2012-02-13 | 2015-03-31 | Applied Materials, Inc. | Methods and apparatus for selective oxidation of a substrate |
| US8871656B2 (en) | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
| JP6007715B2 (ja) * | 2012-03-29 | 2016-10-12 | 東京エレクトロン株式会社 | トラップ機構、排気系及び成膜装置 |
| US20130288485A1 (en) | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
| US20130337171A1 (en) | 2012-06-13 | 2013-12-19 | Qualcomm Mems Technologies, Inc. | N2 purged o-ring for chamber in chamber ald system |
| KR101224520B1 (ko) | 2012-06-27 | 2013-01-22 | (주)이노시티 | 프로세스 챔버 |
| KR20140003776A (ko) | 2012-06-28 | 2014-01-10 | 주식회사 메카로닉스 | 고 저항 산화아연 박막의 제조방법 |
| US20150309073A1 (en) | 2012-07-13 | 2015-10-29 | Northwestern University | Multifunctional graphene coated scanning tips |
| JP2014019912A (ja) | 2012-07-19 | 2014-02-03 | Tokyo Electron Ltd | タングステン膜の成膜方法 |
| US8846448B2 (en) | 2012-08-10 | 2014-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Warpage control in a package-on-package structure |
| WO2014030371A1 (ja) | 2012-08-24 | 2014-02-27 | 独立行政法人科学技術振興機構 | ゲルマニウム層上に窒化酸化アルミニウム膜を備える半導体構造およびその製造方法 |
| KR102002782B1 (ko) | 2012-09-10 | 2019-07-23 | 삼성전자주식회사 | 팽창성 부재를 사용하는 반도체 장치의 제조 방법 |
| JP2014060256A (ja) | 2012-09-18 | 2014-04-03 | Tokyo Electron Ltd | 処理システム |
| US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
| SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
| US20150322286A1 (en) | 2012-11-27 | 2015-11-12 | The Regents Of The University Of California | Polymerized Metal-Organic Material for Printable Photonic Devices |
| US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
| JP2014141739A (ja) | 2012-12-27 | 2014-08-07 | Tokyo Electron Ltd | 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス |
| US20140216498A1 (en) | 2013-02-06 | 2014-08-07 | Kwangduk Douglas Lee | Methods of dry stripping boron-carbon films |
| WO2014130304A1 (en) | 2013-02-19 | 2014-08-28 | Applied Materials, Inc. | Hdd patterning using flowable cvd film |
| KR101443792B1 (ko) | 2013-02-20 | 2014-09-26 | 국제엘렉트릭코리아 주식회사 | 건식 기상 식각 장치 |
| KR20140106977A (ko) | 2013-02-27 | 2014-09-04 | 삼성전자주식회사 | 고성능 금속 산화물 반도체 박막 트랜지스터 및 그 제조방법 |
| US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US9680095B2 (en) | 2013-03-13 | 2017-06-13 | Macronix International Co., Ltd. | Resistive RAM and fabrication method |
| US9378994B2 (en) | 2013-03-15 | 2016-06-28 | Applied Materials, Inc. | Multi-position batch load lock apparatus and systems and methods including same |
| JP6703937B2 (ja) | 2013-03-15 | 2020-06-03 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板堆積システム、ロボット移送装置、及び電子デバイス製造のための方法 |
| US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
| US10224258B2 (en) | 2013-03-22 | 2019-03-05 | Applied Materials, Inc. | Method of curing thermoplastics with microwave energy |
| US9538586B2 (en) | 2013-04-26 | 2017-01-03 | Applied Materials, Inc. | Method and apparatus for microwave treatment of dielectric films |
| WO2014192871A1 (ja) | 2013-05-31 | 2014-12-04 | 株式会社日立国際電気 | 基板処理装置、半導体製造装置の製造方法及び炉口蓋体 |
| JP6196481B2 (ja) * | 2013-06-24 | 2017-09-13 | 株式会社荏原製作所 | 排ガス処理装置 |
| KR101542803B1 (ko) | 2013-07-09 | 2015-08-07 | 주식회사 네오세미텍 | 고온고압 송풍식 퍼지수단을 구비한 진공챔버 및 이를 이용한 세정방법 |
| US9178103B2 (en) | 2013-08-09 | 2015-11-03 | Tsmc Solar Ltd. | Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities |
| CN105453230B (zh) | 2013-08-16 | 2019-06-14 | 应用材料公司 | 用六氟化钨(wf6)回蚀进行钨沉积 |
| KR101825673B1 (ko) | 2013-08-21 | 2018-02-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 박막 제조들에서의 가변 주파수 마이크로파(vfm) 프로세스들 및 애플리케이션들 |
| JP6226648B2 (ja) | 2013-09-04 | 2017-11-08 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
| US9396986B2 (en) | 2013-10-04 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanism of forming a trench structure |
| JP6129712B2 (ja) | 2013-10-24 | 2017-05-17 | 信越化学工業株式会社 | 過熱水蒸気処理装置 |
| US9406547B2 (en) | 2013-12-24 | 2016-08-02 | Intel Corporation | Techniques for trench isolation using flowable dielectric materials |
| CN103745978B (zh) | 2014-01-03 | 2016-08-17 | 京东方科技集团股份有限公司 | 显示装置、阵列基板及其制作方法 |
| US9257527B2 (en) | 2014-02-14 | 2016-02-09 | International Business Machines Corporation | Nanowire transistor structures with merged source/drain regions using auxiliary pillars |
| US9818603B2 (en) | 2014-03-06 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
| KR101571715B1 (ko) | 2014-04-23 | 2015-11-25 | 주식회사 풍산 | 고압 열처리를 이용한 스핀 온 글래스 절연막 형성방법 |
| US10068845B2 (en) | 2014-06-16 | 2018-09-04 | Intel Corporation | Seam healing of metal interconnects |
| CN104089491B (zh) | 2014-07-03 | 2015-11-04 | 肇庆宏旺金属实业有限公司 | 退火炉的余热回收利用系统 |
| US9257314B1 (en) | 2014-07-31 | 2016-02-09 | Poongsan Corporation | Methods and apparatuses for deuterium recovery |
| JPWO2016038664A1 (ja) | 2014-09-08 | 2017-04-27 | 三菱電機株式会社 | 半導体アニール装置 |
| US9773865B2 (en) | 2014-09-22 | 2017-09-26 | International Business Machines Corporation | Self-forming spacers using oxidation |
| US9362107B2 (en) | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
| US20160118391A1 (en) | 2014-10-22 | 2016-04-28 | SanDisk Technologies, Inc. | Deuterium anneal of semiconductor channels in a three-dimensional memory structure |
| KR102079501B1 (ko) | 2014-10-24 | 2020-02-20 | 버슘머트리얼즈 유에스, 엘엘씨 | 규소-함유 필름의 증착을 위한 조성물 및 이를 사용하는 방법 |
| US9543141B2 (en) | 2014-12-09 | 2017-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for curing flowable layer |
| TW201639063A (zh) | 2015-01-22 | 2016-11-01 | 應用材料股份有限公司 | 批量加熱和冷卻腔室或負載鎖定裝置 |
| EP3460827B1 (en) | 2015-02-06 | 2022-05-25 | Versum Materials US, LLC | Compositions and methods using same for carbon doped silicon containing films |
| WO2016130956A1 (en) | 2015-02-13 | 2016-08-18 | Alexander Otto | Multifilament superconducting wire with high resistance sleeves |
| JP6826044B2 (ja) | 2015-04-20 | 2021-02-03 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | バッファチャンバのウエハ加熱機構と支持ロボット |
| US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
| US10443934B2 (en) | 2015-05-08 | 2019-10-15 | Varian Semiconductor Equipment Associates, Inc. | Substrate handling and heating system |
| US9685303B2 (en) | 2015-05-08 | 2017-06-20 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for heating and processing a substrate |
| TWI826223B (zh) | 2015-05-11 | 2023-12-11 | 美商應用材料股份有限公司 | 水平環繞式閘極與鰭式場效電晶體元件的隔離 |
| KR101681190B1 (ko) | 2015-05-15 | 2016-12-02 | 세메스 주식회사 | 기판 건조 장치 및 방법 |
| WO2016191621A1 (en) | 2015-05-27 | 2016-12-01 | Applied Materials, Inc. | Methods and apparatus for a microwave batch curing process |
| WO2016196105A1 (en) | 2015-06-05 | 2016-12-08 | Applied Materials, Inc. | Susceptor position and rotation apparatus and methods of use |
| US9728430B2 (en) | 2015-06-29 | 2017-08-08 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with LED heating |
| US20160379854A1 (en) | 2015-06-29 | 2016-12-29 | Varian Semiconductor Equipment Associates, Inc. | Vacuum Compatible LED Substrate Heater |
| US10170608B2 (en) | 2015-06-30 | 2019-01-01 | International Business Machines Corporation | Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET |
| US9646850B2 (en) | 2015-07-06 | 2017-05-09 | Globalfoundries Inc. | High-pressure anneal |
| US9484406B1 (en) | 2015-09-03 | 2016-11-01 | Applied Materials, Inc. | Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications |
| US9716142B2 (en) | 2015-10-12 | 2017-07-25 | International Business Machines Corporation | Stacked nanowires |
| US9754840B2 (en) | 2015-11-16 | 2017-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Horizontal gate-all-around device having wrapped-around source and drain |
| US9633838B2 (en) | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
| WO2017120102A1 (en) | 2016-01-05 | 2017-07-13 | Applied Materials, Inc. | Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications |
| US9570551B1 (en) | 2016-02-05 | 2017-02-14 | International Business Machines Corporation | Replacement III-V or germanium nanowires by unilateral confined epitaxial growth |
| JP6240695B2 (ja) | 2016-03-02 | 2017-11-29 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| KR101817215B1 (ko) * | 2016-03-16 | 2018-01-11 | 세메스 주식회사 | 펌프 및 액 공급 장치 |
| US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
| TWI680535B (zh) | 2016-06-14 | 2019-12-21 | 美商應用材料股份有限公司 | 金屬及含金屬化合物之氧化體積膨脹 |
| US9933314B2 (en) | 2016-06-30 | 2018-04-03 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor workpiece temperature measurement system |
| US9876019B1 (en) | 2016-07-13 | 2018-01-23 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with programmable memory and methods for producing the same |
| US20180087418A1 (en) | 2016-09-22 | 2018-03-29 | Castrol Limited | Fluid Method and System |
| JP2019530242A (ja) | 2016-09-30 | 2019-10-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 自己整合ビアの形成方法 |
| US10249525B2 (en) | 2016-10-03 | 2019-04-02 | Applied Materials, Inc. | Dynamic leveling process heater lift |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| KR102864010B1 (ko) | 2017-03-31 | 2025-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 고종횡비 트렌치들을 비정질 실리콘 막으로 갭충전하기 위한 2-단계 프로세스 |
| KR20230146121A (ko) | 2017-04-21 | 2023-10-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 개선된 전극 조립체 |
| WO2018204078A1 (en) | 2017-05-01 | 2018-11-08 | Applied Materials, Inc. | High pressure anneal chamber with vacuum isolation and pre-processing environment |
| JP7175283B2 (ja) | 2017-05-03 | 2022-11-18 | アプライド マテリアルズ インコーポレイテッド | 高温セラミックヒータ上の集積化基板温度測定 |
| JP6918146B2 (ja) * | 2017-05-19 | 2021-08-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 液体および固体の排出物を収集して後に反応させて気体の排出物にする装置 |
| US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| JP7184810B6 (ja) | 2017-06-02 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 基板に堆積された膜の品質改善 |
| US10179941B1 (en) | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
| US10096516B1 (en) | 2017-08-18 | 2018-10-09 | Applied Materials, Inc. | Method of forming a barrier layer for through via applications |
| WO2019036157A1 (en) | 2017-08-18 | 2019-02-21 | Applied Materials, Inc. | HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
| EP4321649B1 (en) | 2017-11-11 | 2025-08-20 | Micromaterials LLC | Gas delivery system for high pressure processing chamber |
| WO2019099125A1 (en) | 2017-11-16 | 2019-05-23 | Applied Materials, Inc. | High pressure steam anneal processing apparatus |
| WO2019099255A2 (en) | 2017-11-17 | 2019-05-23 | Applied Materials, Inc. | Condenser system for high pressure processing system |
| JP7299898B2 (ja) | 2018-01-24 | 2023-06-28 | アプライド マテリアルズ インコーポレイテッド | 高圧アニールを用いたシーム修復 |
| SG11202006237RA (en) | 2018-02-22 | 2020-09-29 | Applied Materials Inc | Method for processing a mask substrate to enable better film quality |
| US11114333B2 (en) | 2018-02-22 | 2021-09-07 | Micromaterials, LLC | Method for depositing and reflow of a high quality etch resistant gapfill dielectric film |
| EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS |
| US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| WO2019204124A1 (en) | 2018-04-20 | 2019-10-24 | Applied Materials, Inc. | Ceramic wafer heater with integrated pressurized helium cooling |
| US11499666B2 (en) | 2018-05-25 | 2022-11-15 | Applied Materials, Inc. | Precision dynamic leveling mechanism with long motion capability |
| US11434569B2 (en) | 2018-05-25 | 2022-09-06 | Applied Materials, Inc. | Ground path systems for providing a shorter and symmetrical ground path |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| US10790183B2 (en) | 2018-06-05 | 2020-09-29 | Applied Materials, Inc. | Selective oxidation for 3D device isolation |
| US20200035513A1 (en) | 2018-07-25 | 2020-01-30 | Applied Materials, Inc. | Processing apparatus |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
-
2018
- 2018-08-06 US US16/055,929 patent/US10675581B2/en active Active
-
2019
- 2019-07-01 WO PCT/US2019/040195 patent/WO2020033081A1/en not_active Ceased
- 2019-07-01 CN CN201980054661.3A patent/CN112640074B/zh active Active
- 2019-07-01 JP JP2021505979A patent/JP7510406B2/ja active Active
- 2019-07-01 KR KR1020217006817A patent/KR102724302B1/ko active Active
- 2019-08-01 TW TW108127374A patent/TWI840393B/zh active
-
2020
- 2020-06-09 US US16/897,045 patent/US11110383B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090018688A1 (en) * | 2007-06-15 | 2009-01-15 | Applied Materials, Inc. | Methods and systems for designing and validating operation of abatement systems |
| JP2009212178A (ja) * | 2008-03-03 | 2009-09-17 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
| CN104047676A (zh) * | 2014-06-14 | 2014-09-17 | 马根昌 | 改良式对冲消声器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20200038797A1 (en) | 2020-02-06 |
| JP2021532977A (ja) | 2021-12-02 |
| US20200368666A1 (en) | 2020-11-26 |
| WO2020033081A1 (en) | 2020-02-13 |
| US10675581B2 (en) | 2020-06-09 |
| JP7510406B2 (ja) | 2024-07-03 |
| TW202014594A (zh) | 2020-04-16 |
| KR20210030485A (ko) | 2021-03-17 |
| TWI840393B (zh) | 2024-05-01 |
| CN112640074B (zh) | 2025-01-24 |
| US11110383B2 (en) | 2021-09-07 |
| CN112640074A (zh) | 2021-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102724302B1 (ko) | 가스 저감 장치 | |
| US11361978B2 (en) | Gas delivery module | |
| US20200035513A1 (en) | Processing apparatus | |
| KR20200075892A (ko) | 고압 처리 시스템을 위한 컨덴서 시스템 | |
| US8936834B2 (en) | Computer readable medium for high pressure gas annealing | |
| TWI599747B (zh) | 蓄熱式排放氣體淨化裝置 | |
| KR20220115086A (ko) | 가스 공급 장치, 진공 처리 장치 및 가스 공급 방법 | |
| JPH0568866A (ja) | ガス供給装置 | |
| TWI553148B (zh) | 氣流處理裝置 | |
| US4906257A (en) | Method of and apparatus for treating waste gas from semiconductor manufacturing process | |
| JP4568032B2 (ja) | ガス供給システム、弁アセンブリ、および弁アセンブリを操作することによる反応物質パルス形成方法 | |
| JP6990207B2 (ja) | 加熱分解式排ガス除害装置及び逆流防止方法 | |
| EP0928631B1 (en) | Apparatus for treating exhaust gases containing hydrogen | |
| TW201737406A (zh) | 真空夾盤壓力控制系統 | |
| KR101061922B1 (ko) | 처리 장치 및 처리 방법 | |
| JP2009088308A (ja) | 基板処理装置 | |
| JP2023502921A (ja) | ガスパージバルブ | |
| JP2009297709A (ja) | 流体又は流体混合物のためのプラズマ処理システム | |
| TW202521210A (zh) | 氣體的除害裝置及除害方法 | |
| KR20060100546A (ko) | 반도체 제조설비의 개스 역류방지장치 | |
| US20040003715A1 (en) | Hydrogen diffusion cell assembly with internal flow restrictor | |
| GB2636688A (en) | Abatement apparatus and method of abatement | |
| KR20200067503A (ko) | 분산 구조의 플라즈마 스크러버 장치 | |
| JPH01201916A (ja) | 気相成長装置における排気処理部及びその運転方法 | |
| KR20030033674A (ko) | 반도체 제조 장비의 배기 시스템 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20210305 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20220530 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20240117 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20240725 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20241028 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20241029 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration |