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  • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
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  • C09K11/06—Luminescent materials, e.g. electroluminescent or chemiluminescent containing organic luminescent materials
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  • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
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  • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
  • H10K2102/301—Details of OLEDs
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  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/14—Carrier transporting layers
  • H10K50/15—Hole transporting layers
  • H10K50/155—Hole transporting layers comprising dopants
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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  • Y02E10/549—Organic PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the invention relates to the use of bi- or polynuclear main group metal complexes as p-dopants for organic electronic matrix materials.
• the first field of technology deals with applications of organic matrix materials for the conversion of light into electricity and vice versa, and the other field focuses on the construction of electrical components by means of organic semiconductor material.
• Examples of the former category are, for example, photodetectors and organic solar cells, schematically illustrated in FIG. 1, which convert light into an electrical signal or into electric current, and organic light-emitting diodes (OLEDs), which can generate light by means of organic electronic materials (see FIG. 2).
• OLEDs organic light-emitting diodes
• the second area of technology fall, for example, organic field effect transistors, shown schematically in Figure 3, in which a doping reduces the contact resistance between the electrode and semiconductor material or bipolar transistors.
• WO 2005 086251 describes dopants for the production of n-type layers, which may, inter alia, also have the following structure:
• n-dopants The structure of this class of compounds is also referred to in the literature as a paddle wheel complex, in particular the publication describes the use of a metal complex as an n-dopant for doping an organic semiconductive matrix material to alter its electrical properties of the matrix material can be used as n-dopants.
• an organic electronic component with a matrix wherein the matrix contains as p-dopant a main group metal complex of groups 13 to 15, which in turn contains at least one ligand L of the following structure:
• R 1 and R 2 independently of one another oxygen, sulfur,
• R 4 is selected from the group consisting of alkyl or aryl and may be linked to R 3 ; and R 3 is selected from the group consisting of alkyl, long chain alkyl, alkoxy, long chain alkoxy, cycloalkyl, haloalkyl, aryl, arylenes, haloaryl, heteroaryl, heteroaryls, heterocycloalkylenes, heterocycloalkyl, halohaloaryl, alkenyl, haloalkenyl, alkynyl , Haloalkynyl, ketoaryl, haloketoaryl, ketoheteroaryl, ketoalkyl, haloketoalkyl,
• Ketoalkenyl, halo-ketoalkenyl, with suitable radicals one or more non-adjacent CH 2 groups independently of each other by -O-, -S-, -NH-, -NR ° -, -SiR ° R ° 0 -, -CO-, - C00-, -0C0-, -0C0-0, -SO2, -S-CO-, -CO-S-, -CY1 CY2 or -C ⁇ C- can be replaced in such a way that 0 and / or S atoms are not directly connected are also optionally substituted with aryl or heteroaryl preferably containing 1 to 30 C atoms are replaced (terminal CH 3 groups are understood as CH 2 groups in the sense of CH 2 -H).
• these materials are suitable as p-dopants for matrix materials in organic electronic components. In particular, these materials often have one or more of the following advantages
• the doping strength is adaptable to the matrix
• the conductivity can be adjusted by the concentration and the type of substance.
• organic electronic component means and / or comprises in particular organic transistors, organic light-emitting diodes, light-emitting electrochemical cells, organic solar cells, photodiodes and organic photovoltaics in general.
• p-dopant in particular comprises or means materials which have a Lewis acidity and / or are able to form complexes with the matrix material in which these materials (albeit only formally) Lewis acids act.
• a main group metal complex matrix material such as
• Hole conductor may e.g. have the following structure (interpreted here with bismuth as metal and a coordination via nitrogen):
• main group metal complex of groups 13 to 15 are the metals of the 13th to 15th group according to IUPAC, that is aluminum, gallium, indium, silicon, germanium, tin,
• alkyl linear and branched C 1 -C 8 -alkyls
• long-chain alkyls linear and branched C 5 -C 20 -alkyls
• Alkenyl C 2 -C 6 -alkenyl
• Cycloalkyl C 3 -C 8 cycloalkyl
• Alkoxy Cl-C6-alkoxy, long-chain alkoxy: linear and branched C5-C20 alkoxy
• Alkylenes selected from the group comprising:
• methylenes 1, 1 -ethylene; 1, 2-ethylenes; 1, 1 -propylidenes; 1,2-propylene; 1,3-propylene; 2, 2 -propylidenes; butan-2-ol-1,4-diyl; propan-2-ol-1,3-diyl; 1, 4-butylenes; cyclohexane-1,1-diyl; cyclohexane-1,2-diyl; cyclohexane-1, 3-diyl; cyclohexane
• aryl selected from aromatics having a molecular weight below 300Da.
• Arylenes selected from the group comprising: 1, 2-phenylenes; 1,3-phenylenes; 1,4-phenylenes; 1,2-naphthylenes; 1,3-naphthalenylenes; 1,4-naphthylenes; 2, 3 -naphthylenes; 1-hydroxy-2,3-phenylenes; 1-hydroxy-2, 4-phenylene; 1-hydroxy-2, 5-phenylene; and 1-hydroxy-2, 6-phenylene,
• Heteroaryl selected from the group comprising: pyridinyl; pyrimidinyl; pyrazinyl; triazolyl; pyridazinyl; 1,3,5-triazinyl; quinoninyl; isoquinoninyl; quinoxalinyl; imidazolyl; pyrazolyl; benzimidazolyl; thiazolyl; oxazolidinyl; pyrrolyl; thiophenyl; carbazolyl; indolyl; and isoindolyl, wherein the heteroaryl may be linked to the compound via any atom in the ring of the selected heteroaryl.
• Heteroarylenes selected from the group comprising: pyridinoxynyl; quinolinediyl; pyrazodiyl; pyrazolediyl; triazolediyl; pyrazinediyl, thiophenediyl; and imidazolediyl, wherein the heteroarylene serves as a bridge in the compound via any one of
• Atom in the ring of the selected heteroaryl functions especially preferred are: pyridine-2, 3-diyl; pyridine-2, 4-diyl; pyridine
• -diyl pyrazole-3,5-diyl; triazole-3, 5-diyl; triazole-1, 3-diyl; pyrazine-2, 5-diyl; and imidazoles-2, 4-diyl, thiophene-2, 5-diyl, thiophene-3, 5-diyl; a -CC-C6 heterocycloalkyl selected from the group comprising: piperidinyl; piperidines;
• heteroaryl may be linked to the C 1 -C 6 alkyl via any atom in the ring of the selected heteroaryl.
• Heterocycloalkylenes selected from the group comprising: piperidin-1, 2-ylene; piperidine-2, 6-ethylenes; piperidine-4,4-ylidenes; 1,4-piperazine-1, 4-ethylene; 1, 4 -piperazine-2, 3 -ylene; 1,4-piperazin-2, 5-ylene; 1,4-piperazine-2,6-ethylene; 1,4-piperazine-1,2-ylene; 1,4-piperazine-1, 3-ethylene; 1,4-piperazine-1,4-ethylene; tetrahydrothiophene-2, 5-ylene; tetrahydrothiophene-3, 4-ethylene; tetrahydrothiophene-2, 3-ethylene; tetrahydrofuran-2, 5-ylene; tetrahydrofuran-3, 4-ethylene; tetrahydrofuran-2,3-ethylene; pyrrolidin-2, 5-ylene; pyrrolidine-3, 4-butylene; pyrrolidine-2, 3-ylene; Pyrrolidine
• Heterocycloalkyl selected from the group comprising: pyrrolinyl; pyrrolidinyl; morpholinyl; piperidinyl; piperazinyl; hexamethylene imine; 1,4-piperazinyl; tetrahydrothiophenyl; tetrahydrofuranyl; 1,4,7-triazacyclononanyl; 1,4,8,11-tetraazacyclotetradecanyl; 1,4,7,10,13-pentaazacyclopentadecane; 1, 4-diaza- 7 -thiacyclononanyl; 1,4-diaza- 7-oxacyclo-nonanyl; 1, 4, 7, 10-tetraazacyclododecanyl; 1, 4-dioxanyl;
• 1,4,7-trithiacyclononanyl 1,4,7-trithiacyclononanyl; tetrahydropyranyl; and oxazolidinyl, wherein the heterocycloalkyl may be linked to the compound via any atom in the ring of the selected heterocycloalkyl.
• Amines the group -N (R) 2 wherein each R is independently selected from: hydrogen; Cl-C6-alkyl; Cl -C6 -alkyl -C6H5; and phenyl, wherein when both R 'are C1-C6 alkyl, both R' can form a - NC3 to NC5 heterocyclic ring wherein the remaining alkyl chain forms an alkyl substituent on the heterocyclic ring.
• Halogen selected from the group consisting of: F; Cl; Br and I
• Haloalkyl selected from the group consisting of mono, di, tri-, poly- and perhalogenated linear and branched C1-C8 alkyl, particularly preferably -CF 3 pseudo halogen: selected from the group consisting of -CN, - SCN, -OCN, N3, -CNO, -SeCN
• Carboxylate the group -C (O) OR, wherein R is selected from: hydrogen; Cl-C6-alkyl; phenyl; Cl -C6 -alkyl -C6H5;
• Carbonyl the group -C (O) R, wherein R is selected from: hydrogen; C1-C6-alkyl; phenyl; C 1 -C 6 -alkyl C 6 H 5 and amines selected from the group: -NR '2, wherein each R' is independently selected from: hydrogen; Cl-C6-alkyl; Cl-C6-alkyl- C6H5; and phenyl, when both R 'are C1-C6 alkyl, both R' can form a -NC3 to NC5 heterocyclic ring with the remaining alkyl chain forming an alkyl substituent on the heterocyclic ring.
• alkyl linear and branched C 1 -C 6 -alkyl
• long-chain alkyls linear and branched C 5 -C 10 -alkyl, preferably C 6 -C 8 -alkyls
• alkenyl C 3 -C 6 -alkenyl
• cycloalkyl C 6 -C 8 -cycloalkyl
• alkoxy Cl -C4 alkoxy
• long-chain alkoxy linear and branched C5-C10 alkoxy, preferably linear C6-C8 alkoxy
• Alkylenes selected from the group comprising: methylenes;
• Aryl selected from the group comprising: phenyl; biphenyl; naphthalenyl; anthracenyl; and phenanthrenyl, arylenes: selected from the group consisting of: 1, 2-phenylenes;
• Heteroaryl selected from the group comprising:
• heteroaryl may be linked to the compound via any atom in the ring of the selected heteroaryl, heteroarylenes: selected from the group comprising: pyridine
• Heterocycloalkyl selected from the group comprising:
• pyrrolidinyl morpholinyl; piperidinyl; piperidinyl; 1,4-piperazinyl; tetrahydrofuranyl; 1, 4, 7-triazacyclononanyl;
• heteroaryl may be linked to the compound via any atom in the ring of the selected heteroaryl
• Heterocycloalkylenes selected from the group comprising: piperidine-2, 6-ethylenes; piperidine-4, 4-ylidenes; 1, 4 -piperazine-
• Amine the group -N (R) 2, wherein each R is independently selected from: hydrogen; Cl-C6-alkyl; and benzyl,
• Halogen selected from the group comprising: F and Cl,
• Carboxylate the group -C (O) OR wherein R is selected from hydrogen; C1-C6-alkyl; and benzyl,
• R 3 is haloalkyl, particularly preferably perfluoroalkyl having 1 to 8 carbons, more preferably 1 to 4, haloaryl, more preferably perfluoroaryl, haloalkylaryl, particularly preferred
• fluorinated benzoic acids such as e.g. 2
• 2,3,4,5-tetrafluorobenzoic acid fluorinated or non-fluorinated phenylacetic acid, e.g. 2-fluoro-phenylacetic acid; 3-fluoro-phenylacetic acid; 4-fluoro-
• Trifluoroethyl trifluoroacetate Difluoroacetic acid; Trifluoroacetic acid; Methyl chlorodifluoroacetate; Ethyl bromodifluoroacetate; Chlorodifluoroacetic acid; Ethyl chlorofluoroacetate; Ethyl difluoroacetate; (3-chlorophenyl) difluoroacetic acid; (3, 5-difluorophenyl) -difluoroacetic acid; (4-butylphenyl) difluoroacetic acid; (4-tert-butylphenyl) difluoroacetic acid; (3, 4-dimethylphenyl) difluoroacetic acid; (3-chloro-4-fluorophenyl) difluoroacetic acid; (4-chlorophenyl) -difluoroacetic acid; 2-biphenyl-3 ', 5'-difluoroacetic acid; 3-bi
• R 3 is selected from the group comprising:
• Y 1 - Y 5 are independently selected from the group consisting of CF, C-CF 3 C-NO 2 , C-CN, C-halogen, C-pseudohalogen or N.
• R 3 is selected from the group comprising:
• Y 1 - Y 7 are independently selected from the group consisting of CF, C-CF 3 , C-NO 2 , C-CN, C-halogen, C-pseudohalogen or N.
• R 3 is selected from the group comprising:
• Y 1 - Y 7 are independently selected from the group consisting of CF, CF 3 , C-NO 2 , C-CN, C-halogen, C-pseudohalogen or N.
• R 3 is selected from the group comprising:
• R 3 is selected from the group comprising halogenated, preferably perhalogenated and / or pseudohalogenated pteridines, isopteridines, naphthyridines, quinoxalines, azaquinoxalines.
• the metal complex (without the presence of matrix material) is Lewis acid, i. he acts as an electron pair acceptor. This has proven to be particularly preferred for interaction with the matrix materials.
• the metal complex (without the presence of matrix material) has at least one open or partially accessible coordination site. This has also been found to be particularly preferred for interaction with the matrix materials.
• the compounds can be processed in both the gas phase and the liquid phase. In the vapor deposition both dopant and matrix material are common, preferably from vaporizes different sources in a high vacuum and deposited as a layer. During processing from the liquid phase, the metal complex and the matrix material are dissolved in a solvent and deposited by means of printing techniques, spin coating, knife coating, slot coating, etc. The finished layer is obtained by evaporation of the solvent. It can be adjusted by the different mass ratios of metal complex to the matrix material any doping ratios.
• the following hole conductors can be processed by means of a solvent process:
• matrix materials which are referred to as "small molecules" can be processed by means of a solvent process and are known to those skilled in the art and include, for example, spiro-TAD (2, 2 ', 7, 7' tetrakis (N, -diphenylamino) -9,9'-spirobifluorene) and spiro-TTB (2, 2 ', 7, 7' tetrakis (N, '-di-p-methylphenylamino) -9,9'-spirobifluorene and other materials such as they are listed in this application as matrix materials.
• spiro-TAD 2, 2 ', 7, 7' tetrakis (N, -diphenylamino) -9,9'-spirobifluorene
• spiro-TTB 2, 2 ', 7, 7' tetrakis (N, '-di-p-methylphenylamino) -9,9'-spirobifluor
• the metal complex is a mono- or bi- or polynuclear metal complex.
• the metal complex can be present in the solid state as a polynuclear metal complex.
• the solid state poly-nuclear metal complex can de-polymerize during evaporation and may advantageously be monocrystalline in the gas phase. This embodiment is particularly advantageous because it provides a particularly thorough mixing and good binding of the complexes to the matrix materials.
• the metal complex may contain the metal atom M Sn, Sb, Pb or bismuth. More preferably, the metal complexes may be either mononuclear, as specified below
• the mononuclear complexes undergo terminal coordination of the metal over the ligand (s).
• ligand s
• the main group metal complex contains bismuth.
• Bismuth main group metal complexes are particularly preferred here:
• the oxidation states II which without ge by theory as a function of the selected ligands following paddle wheel structure may have.
• the oxidation state V in which, in a particular embodiment, the main group metal complex bismuth of the oxidation state V may be contained with the following structure:
• the aryls may be selected independently of one another from the group of substituted or unsubstituted aromatics or heteroaromatics. In a particular embodiment, these are partially or perfluorinated aromatics or heteroaromatics. Furthermore, particularly preferably, the aryls can be selected from the group of non-fluorinated or fluorinated carboxylates or generally from the group of ligands L, as listed in this application.
• M metal
• L ligand
• m 1 to 10
• M metal
• L ligand
• L' a ligand not identical to L selected from the group aryl, heteroaryl, Haloaryl and halo heteroaryl
• n can be from 0 to 3
• the matrix material of the opto-electronic component comprises one or more of the following materials:
• NPB ⁇ , ⁇ '-bis (naphthalen-l-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine
• ⁇ -NPB ⁇ , ⁇ '-bis (naphthalen-2-yl) - ⁇ , ⁇ ' -bis (phenyl) -benzidine
• TPD ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -benzidine
• spiro TPD ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) benzidine
• DMFL-NPB ⁇ , ⁇ '-bis (naphthalen-l-yl) - ⁇ , ⁇ '-bis (phenyl) -9,9-dimethyl-fluorene
• DPFL-TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -9,9-diphenyl-fluorene)
• DPFL-NPB ⁇ , ⁇ '-bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) -9,9-diphenyl-fluorene
• Spiro-TTB (2, 2 ', 7,7'-tetrakis ( ⁇ , ⁇ '-di-p-methylphenylamino) -9,9'-spirobifluorene). These materials have proven themselves as matrix materials in (opto) electronic components.
• the degree of doping in moles of metal complex based on moles of matrix material is from 0.1% to 50%. This has proven to be useful.
• the degree of doping is from> 0.5% to ⁇ 15%, more preferably> 1% to ⁇ 5%.
• R 3 is selected from the group comprising halogenated, preferably perhalogenated and / or pseudohalogenated pteridines, isopteridines, naphthyridines, quinoxalines, azaquinoxalines.
• the metal complex may contain at least one ligand L selected from the group of unsubstituted, partially fluorinated or perfluorinated organic carboxylic acids.
• Organic carboxylic acids can generally be selected from the Groups of the aliphatic, saturated monocarboxylic acids;
• aliphatic, unsaturated monocarboxylic acids aliphatic, saturated dicarboxylic acids; aliphatic, saturated tricarboxylic acids; aliphatic, unsaturated dicarboxylic acids; aromatic carboxylic acids; heterocyclic carboxylic acids; aliphatic, unsaturated, cyclic monocarboxylic acids.
• Particularly preferred partial or perfluorinated ligands L are selected from substituted or unsubstituted compounds of acetic acid, phenylacetic acid and / or benzoic acid and are exemplified above. Particularly preferred is non-fluorinated, partially fluorinated or perfluorinated acetic acid.
• one or more multidentate ligands L may be bridged between the metal atoms of the complex.
• the present invention further relates to the use of a group 13-15 metal complex containing at least one ligand L of the following structure:
• R 1 and R 2 may independently be oxygen, sulfur, selenium, NH or NR 4 , wherein R 4 is selected from the group consisting of alkyl or aryl and may be linked to R 3 ;
• R 3 is selected from the group consisting of alkyl, long-chain alkyl, alkoxy, long-chain alkoxy, cycloalkyl, haloalkyl, aryl, arylenes, haloaryl, heteroaryl, heteroarylene, heterocycloalkylenes, heterocycloalkyl, haloheteroaryl, alkenyl, haloalkenyl, alkynyl, Haloalkynyl, ketoaryl, haloketoaryl, ketoheteroaryl, ketoalkyl, halo-ketoalkyl, ketoalkenyl, halo-ketoalkenyl, where, with suitable radicals, one or more non-adjacent CH 2 groups independently of one another by -O-, -S-, -NH-, -NR ° -, - SiR ° R ° 0 -, -CO-, - C00-, -0C0-, -0C0-0
• Fig. 1 shows schematically the structure of an organic light emitting diode (10).
• the light-emitting diode is constructed from a glass layer (1); Transparent Conductive oxide (TCO) or PEDOTrPPS or PANI layer (2); Hole injector layer (3); Hole transport layer (HTL) (4); Emitter layer (EML) (5); Hole blocker layer (HBL) (6); Electron Transport Layer (ETL) (7); Electron injector layer (8) and a cathode layer (9);
• Fig. 2 shows schematically the structure of an organic solar cell with PIN structure (20), which converts light (21) into electricity.
• the solar cell consists of a layer of indium tin oxide (22); a p-doped layer (23); an absorption layer (24); an n-doped layer (25) and a metal layer (26);
• Fig. 3 shows schematically a possible cross section of an organic field effect transistor (30).
• a gate electrode (32), a gate dielectric (33), a source and drain contact (34 + 35), and an organic semiconductor (36) are deposited.
• the hatched areas show the places where a contact doping is helpful.
• Fig. 4 shows the current density versus the voltage for an undoped matrix material and for a doped matrix material according to a first embodiment of the invention
• Fig. 5 shows the absorption versus wavelength for the materials of Fig. 4;
• FIG. 6 shows the photoluminescence versus wavelength for the materials of FIG. 4.
• FIG. 7 shows the reflection against the wavelength for the doped material of FIG. 4.
• FIG. 8 shows the current density versus the voltage for an undoped matrix material and for a plurality of doped matrix materials according to a second embodiment of the invention
• FIG. 9 shows the absorption versus wavelength for the materials of FIG. 8;
• FIG. 10 shows the photoluminescence versus wavelength for the doped materials of FIG. 8.
• FIG. 11 shows the reflection against the wavelength for the materials from FIG. 8
• 13 shows the current density versus the voltage for an undoped matrix material and for a plurality of doped matrix materials according to a fourth embodiment of the invention
• 14 shows the current density versus the voltage for an undoped matrix material and for a plurality of doped matrix materials according to a fifth embodiment of the invention
• FIG. 15 shows the luminescence versus voltage for the doped materials of FIG. 14;
• FIG. 16 shows the current density versus the voltage for an undoped matrix material and for a plurality of doped matrix materials according to a sixth embodiment of the invention
• FIG. 17 shows the luminescence versus voltage for the doped materials of FIG. 16;
• Example I relates to Bi (O 2 CCF 3 ) 3, which was prepared according to literature, s. Bo Li "Heterometallic Carboxylates Incorperating Bismuth", PhD Thesis State University of New York at Albany, Chair M. Petrukhina 2007, UMI Number 3277252 and Vera Reiland “Chemistry and Coordination Chemistry of Bismuth Trifluoroacetate and Related Compounds", Dissertation D368, University of Kaiserslautern 2000 ,
• ITO prestructured glass substrates were heated for 10 min. subjected to an oxygen plasma treatment and then subsequently transferred to the evaporator as quickly as possible.
• the evaporator was transferred to an argon glovebox in which the oxygen and water concentration is less than 2 ppm. All evaporations were carried out at a vacuum of less than 2 x 10 "6 mbar base pressure is performed (during the evaporation the pressure then rises). First, both matrix and dopant were heated to just before the evaporation point, then heated until a constant evaporation could be observed.
• the total evaporation rate was about 1 A / s, with the evaporation rate of the dopant adjusted above the evaporation rate of the matrix material. After the shutters were closed, it was cooled to 40 ° C, flooded with argon, changed the mask for the deposition of the cathode and then evacuated again.
• the electrode consisted of a 150 nm thick layer of aluminum which was deposited at an initial evaporation rate of 0.5 A / s, which was slowly increased to 5 A / s.
• FIGS. 4 to 7 relate to HTM-014 doped with Bi (O 2 CCF 3 ) 3 and undoped (matrix material, Merck
• Fig. 4 shows the current density versus the applied voltage for the two materials. It can already be seen in the doped layer, an increase in the current density against the applied voltage.
• the absorption, the photoluminescence and the reflection were measured (FIGS. 5 to 7). It can be seen that the complexes are almost transparent, which makes them suitable for use in (opto) -electronic components.
• Example II refers to Bi (O 2 CC 6 H 2 (2, 3, 4 -F 3 )) 3 which was prepared as follows: A 50 ml Schlenk flask was charged with 0.251 g (0.57 mmol) of triphenylbismuth (III) , then made up to 10-15 ml of freshly distilled benzene and with an excess (about 3 mmol) of 2, 3, 4-trifluorobenzoic acid added. The mixture is heated under reflux for one hour and then cooled to room temperature, then the solvent is removed under reduced pressure until a white solid precipitates. The crude product (yield 85-88%) is washed with a little hexane and dried in vacuo overnight. For cleaning can be sublimated.
• Example II In analogy to Example I, four layers, once consisting of an undoped matrix material (HTM-014, Merck) and with 5%, 13% and 15% Bi (0 2 CC 6 H 2 (2, 3, 4 -F 3 )) 3 doped layers HTM-014 applied.
• the layer thickness was 200nm each.
• Fig. 8 shows the current density versus the applied voltage for the three materials. It can already be seen in the 5% doped layer, an increase in the current density against the applied voltage.
• HIL-012 matrix material, Merck KGaA
• Bi (0 2 C 2 F 3) 3 and BipFbz are used.
• Bi (0 2 C 2 F 3) 3 and bismuth tris-pentafluorobenzoat (BipFBz) spiked solutions are processed.
• the total solids content in these embodiments is a total of 2% by weight and the proportion of dopants in the total solids content is 15% by weight.
• the parameters for the spin coating are found to be 1500 rpm for the element with Bi (O 2 C 2 F 3 ) 3 as dopant and 1000 rpm for the element with BipFBz. Total is coated for a period of 40 seconds and the layer thickness after drying under the above parameters is 100 nm for both elements.
• the measurements are carried out in each case on 4 mm 2 large elements.
• Fig. 12 shows the obtained current density-voltage characteristics for the different components of this example. It can be clearly stated that the doping results in a conductivity increased by several orders of magnitude.
• Example IV In the context of a solvent process, a majority charge carrier component is produced, the spiro-TTB being used as the polymeric hole conductor and the metal complexes Bi (O 2 C 2 F 3) 3 and BipFbz according to the invention being used as dopants.
• Fig. 13 shows the obtained current density-voltage characteristics for the different components of this example.
• the undoped and doped hole conductor layers described in Example III are incorporated into red OLEDs.
• the red OLEDs have the following layer structure glass / ITO / 100nm HTL varies / lOnm NPB / 20nm emitter layer of 20% NPB, 70% TPBi, 10% ADS076 / 60nm TPBi / 0.7nm LiF / 200nm AI.
• the dopants are bismuth tris-trifluoroacetate
• Spiro-TTB is used as a hole conductor and doped with BipFBz.
• Spiro-TTB and BipFBz can be produced both according to the solvent (characteristic curve BipFBz) and the evaporation process (characteristic curve BipFBz (ev)).
• the characteristic current density-voltage characteristic or luminance-voltage characteristic are shown in FIGS. 16 and 16
• the doped hole conductor layers produced in Examples III and IV can also be used as hole conductor layers for organic solar cells, in particular those with a p-i-n structure.

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