CN107681052B - 用作有机电子基体材料的p-掺杂剂的主族金属络合物 - Google Patents
用作有机电子基体材料的p-掺杂剂的主族金属络合物 Download PDFInfo
- Publication number
- CN107681052B CN107681052B CN201710695698.7A CN201710695698A CN107681052B CN 107681052 B CN107681052 B CN 107681052B CN 201710695698 A CN201710695698 A CN 201710695698A CN 107681052 B CN107681052 B CN 107681052B
- Authority
- CN
- China
- Prior art keywords
- acid
- group
- trifluoromethyl
- benzoic acid
- fluoro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 46
- 239000002019 doping agent Substances 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 title claims description 33
- 239000002184 metal Substances 0.000 title claims description 33
- 150000004696 coordination complex Chemical class 0.000 claims abstract description 41
- 239000003446 ligand Substances 0.000 claims abstract description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052797 bismuth Inorganic materials 0.000 claims description 23
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 21
- 229910052718 tin Inorganic materials 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- ONOTYLMNTZNAQZ-UHFFFAOYSA-N 2,6-difluorobenzoic acid Chemical compound OC(=O)C1=C(F)C=CC=C1F ONOTYLMNTZNAQZ-UHFFFAOYSA-N 0.000 claims description 5
- HVFQJWGYVXKLTE-UHFFFAOYSA-N 3,5-bis(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC(C(F)(F)F)=CC(C(F)(F)F)=C1 HVFQJWGYVXKLTE-UHFFFAOYSA-N 0.000 claims description 5
- LBQMIAVIGLLBGW-UHFFFAOYSA-N 2,5-difluorobenzoic acid Chemical compound OC(=O)C1=CC(F)=CC=C1F LBQMIAVIGLLBGW-UHFFFAOYSA-N 0.000 claims description 4
- NSTREUWFTAOOKS-UHFFFAOYSA-N 2-fluorobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1F NSTREUWFTAOOKS-UHFFFAOYSA-N 0.000 claims description 4
- BBYDXOIZLAWGSL-UHFFFAOYSA-N 4-fluorobenzoic acid Chemical compound OC(=O)C1=CC=C(F)C=C1 BBYDXOIZLAWGSL-UHFFFAOYSA-N 0.000 claims description 4
- WEPXLRANFJEOFZ-UHFFFAOYSA-N 2,3,4-trifluorobenzoic acid Chemical compound OC(=O)C1=CC=C(F)C(F)=C1F WEPXLRANFJEOFZ-UHFFFAOYSA-N 0.000 claims description 3
- FBRJYBGLCHWYOE-UHFFFAOYSA-N 2-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(F)(F)F FBRJYBGLCHWYOE-UHFFFAOYSA-N 0.000 claims description 3
- OCIYTBZXTFPSPI-UHFFFAOYSA-N 2-fluoro-4-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC=C(C(F)(F)F)C=C1F OCIYTBZXTFPSPI-UHFFFAOYSA-N 0.000 claims description 3
- LIFKXWNFWIUMJT-UHFFFAOYSA-N 2-fluoro-5-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC(C(F)(F)F)=CC=C1F LIFKXWNFWIUMJT-UHFFFAOYSA-N 0.000 claims description 3
- FPENCTDAQQQKNY-UHFFFAOYSA-N 3,4-difluorobenzoic acid Chemical compound OC(=O)C1=CC=C(F)C(F)=C1 FPENCTDAQQQKNY-UHFFFAOYSA-N 0.000 claims description 3
- GONAVIHGXFBTOZ-UHFFFAOYSA-N 3,5-difluorobenzoic acid Chemical compound OC(=O)C1=CC(F)=CC(F)=C1 GONAVIHGXFBTOZ-UHFFFAOYSA-N 0.000 claims description 3
- OKPFIWIMBJNFSE-UHFFFAOYSA-N 3-(trifluoromethoxy)benzoic acid Chemical compound OC(=O)C1=CC=CC(OC(F)(F)F)=C1 OKPFIWIMBJNFSE-UHFFFAOYSA-N 0.000 claims description 3
- XUQCONCMPCVUDM-UHFFFAOYSA-N 3-fluoro-4-methylbenzoic acid Chemical compound CC1=CC=C(C(O)=O)C=C1F XUQCONCMPCVUDM-UHFFFAOYSA-N 0.000 claims description 3
- MEXUTNIFSHFQRG-UHFFFAOYSA-N 6,7,12,13-tetrahydro-5h-indolo[2,3-a]pyrrolo[3,4-c]carbazol-5-one Chemical compound C12=C3C=CC=C[C]3NC2=C2NC3=CC=C[CH]C3=C2C2=C1C(=O)NC2 MEXUTNIFSHFQRG-UHFFFAOYSA-N 0.000 claims description 3
- 235000010233 benzoic acid Nutrition 0.000 claims description 3
- 150000001559 benzoic acids Chemical class 0.000 claims description 3
- SFKRXQKJTIYUAG-UHFFFAOYSA-N 2,3,4,5-tetrafluorobenzoic acid Chemical compound OC(=O)C1=CC(F)=C(F)C(F)=C1F SFKRXQKJTIYUAG-UHFFFAOYSA-N 0.000 claims description 2
- CPZROMDDCPPFOO-UHFFFAOYSA-N 2,3,5-trifluorobenzoic acid Chemical compound OC(=O)C1=CC(F)=CC(F)=C1F CPZROMDDCPPFOO-UHFFFAOYSA-N 0.000 claims description 2
- JLZVIWSFUPLSOR-UHFFFAOYSA-N 2,3-difluorobenzoic acid Chemical compound OC(=O)C1=CC=CC(F)=C1F JLZVIWSFUPLSOR-UHFFFAOYSA-N 0.000 claims description 2
- AKAMNXFLKYKFOJ-UHFFFAOYSA-N 2,4,5-trifluorobenzoic acid Chemical compound OC(=O)C1=CC(F)=C(F)C=C1F AKAMNXFLKYKFOJ-UHFFFAOYSA-N 0.000 claims description 2
- JTOIZLCQNWWDCN-UHFFFAOYSA-N 2,4-bis(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC=C(C(F)(F)F)C=C1C(F)(F)F JTOIZLCQNWWDCN-UHFFFAOYSA-N 0.000 claims description 2
- NJYBIFYEWYWYAN-UHFFFAOYSA-N 2,4-difluorobenzoic acid Chemical compound OC(=O)C1=CC=C(F)C=C1F NJYBIFYEWYWYAN-UHFFFAOYSA-N 0.000 claims description 2
- XZNLSDPNMNWCRE-UHFFFAOYSA-N 2,6-bis(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=C(C(F)(F)F)C=CC=C1C(F)(F)F XZNLSDPNMNWCRE-UHFFFAOYSA-N 0.000 claims description 2
- JMYSPFGUBNENSE-UHFFFAOYSA-N 2-(trifluoromethoxy)benzoic acid Chemical compound OC(=O)C1=CC=CC=C1OC(F)(F)F JMYSPFGUBNENSE-UHFFFAOYSA-N 0.000 claims description 2
- CGFMLBSNHNWJAW-UHFFFAOYSA-N 2-chloro-4,5-difluorobenzoic acid Chemical compound OC(=O)C1=CC(F)=C(F)C=C1Cl CGFMLBSNHNWJAW-UHFFFAOYSA-N 0.000 claims description 2
- XNTIGDVFBDJLTQ-UHFFFAOYSA-N 2-chloro-6-fluorobenzoic acid Chemical compound OC(=O)C1=C(F)C=CC=C1Cl XNTIGDVFBDJLTQ-UHFFFAOYSA-N 0.000 claims description 2
- LNARMXLVVGHCRP-UHFFFAOYSA-N 2-fluoro-6-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=C(F)C=CC=C1C(F)(F)F LNARMXLVVGHCRP-UHFFFAOYSA-N 0.000 claims description 2
- VJMYKESYFHYUEQ-UHFFFAOYSA-N 3,4,5-trifluorobenzoic acid Chemical compound OC(=O)C1=CC(F)=C(F)C(F)=C1 VJMYKESYFHYUEQ-UHFFFAOYSA-N 0.000 claims description 2
- CKUNRJPLPRCMCL-UHFFFAOYSA-N 3,4-difluoro-5-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC(F)=C(F)C(C(F)(F)F)=C1 CKUNRJPLPRCMCL-UHFFFAOYSA-N 0.000 claims description 2
- PKTSBFXIHLYGEY-UHFFFAOYSA-N 3-chloro-4-fluorobenzoic acid Chemical compound OC(=O)C1=CC=C(F)C(Cl)=C1 PKTSBFXIHLYGEY-UHFFFAOYSA-N 0.000 claims description 2
- NSGKIIGVPBTOBF-UHFFFAOYSA-N 3-fluoro-5-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC(F)=CC(C(F)(F)F)=C1 NSGKIIGVPBTOBF-UHFFFAOYSA-N 0.000 claims description 2
- MXNBDFWNYRNIBH-UHFFFAOYSA-N 3-fluorobenzoic acid Chemical compound OC(=O)C1=CC=CC(F)=C1 MXNBDFWNYRNIBH-UHFFFAOYSA-N 0.000 claims description 2
- RATSANVPHHXDCT-UHFFFAOYSA-N 4-(trifluoromethoxy)benzoic acid Chemical compound OC(=O)C1=CC=C(OC(F)(F)F)C=C1 RATSANVPHHXDCT-UHFFFAOYSA-N 0.000 claims description 2
- PEPCYJSDHYMIFN-UHFFFAOYSA-N 4-chloro-2,5-difluorobenzoic acid Chemical compound OC(=O)C1=CC(F)=C(Cl)C=C1F PEPCYJSDHYMIFN-UHFFFAOYSA-N 0.000 claims description 2
- JUHPDXOIGLHXTC-UHFFFAOYSA-N 4-fluoro-2-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC=C(F)C=C1C(F)(F)F JUHPDXOIGLHXTC-UHFFFAOYSA-N 0.000 claims description 2
- WZBPZYCJUADXRS-UHFFFAOYSA-N 4-fluoro-3-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC=C(F)C(C(F)(F)F)=C1 WZBPZYCJUADXRS-UHFFFAOYSA-N 0.000 claims description 2
- SWKPKONEIZGROQ-UHFFFAOYSA-N 4-trifluoromethylbenzoic acid Chemical compound OC(=O)C1=CC=C(C(F)(F)F)C=C1 SWKPKONEIZGROQ-UHFFFAOYSA-N 0.000 claims description 2
- JVBLXLBINTYFPR-UHFFFAOYSA-N 5-fluoro-2-methylbenzoic acid Chemical compound CC1=CC=C(F)C=C1C(O)=O JVBLXLBINTYFPR-UHFFFAOYSA-N 0.000 claims description 2
- FQXQBFUUVCDIRK-UHFFFAOYSA-N 3-trifluoromethylbenzoic acid Chemical compound OC(=O)C1=CC=CC(C(F)(F)F)=C1 FQXQBFUUVCDIRK-UHFFFAOYSA-N 0.000 claims 3
- HRIHSNPFVGMAKX-UHFFFAOYSA-N 3-fluoro-4-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=CC=C(C(F)(F)F)C(F)=C1 HRIHSNPFVGMAKX-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 abstract description 23
- 125000001072 heteroaryl group Chemical group 0.000 abstract description 20
- 125000003118 aryl group Chemical group 0.000 abstract description 19
- 125000003545 alkoxy group Chemical group 0.000 abstract description 17
- 125000000592 heterocycloalkyl group Chemical group 0.000 abstract description 13
- 125000005549 heteroarylene group Chemical group 0.000 abstract description 11
- 125000005216 haloheteroaryl group Chemical group 0.000 abstract description 9
- 125000003106 haloaryl group Chemical group 0.000 abstract description 8
- 125000006588 heterocycloalkylene group Chemical group 0.000 abstract description 8
- 125000003342 alkenyl group Chemical group 0.000 abstract description 7
- 125000000732 arylene group Chemical group 0.000 abstract description 7
- 125000000753 cycloalkyl group Chemical group 0.000 abstract description 7
- 125000001188 haloalkyl group Chemical group 0.000 abstract description 7
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 5
- 125000000304 alkynyl group Chemical group 0.000 abstract description 5
- 125000000262 haloalkenyl group Chemical group 0.000 abstract description 5
- 125000000232 haloalkynyl group Chemical group 0.000 abstract description 5
- 229910052711 selenium Inorganic materials 0.000 abstract description 5
- 239000011669 selenium Substances 0.000 abstract description 5
- 229910052717 sulfur Inorganic materials 0.000 abstract description 5
- 239000011593 sulfur Substances 0.000 abstract description 5
- 125000004434 sulfur atom Chemical group 0.000 abstract description 5
- -1 1,1-ethylene Chemical group 0.000 description 86
- 239000000463 material Substances 0.000 description 36
- 229910052757 nitrogen Inorganic materials 0.000 description 26
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 11
- 239000004020 conductor Substances 0.000 description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 11
- 238000009834 vaporization Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 10
- 230000008016 vaporization Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 229910052736 halogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 8
- 150000003254 radicals Chemical class 0.000 description 8
- MQRCTQVBZYBPQE-UHFFFAOYSA-N 189363-47-1 Chemical compound C1=CC=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC=CC=1)C=1C=CC=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 MQRCTQVBZYBPQE-UHFFFAOYSA-N 0.000 description 6
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 125000001931 aliphatic group Chemical group 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 4
- LBEKFPMWHCQYCT-UHFFFAOYSA-K bismuth;2,2,2-trifluoroacetate Chemical compound [Bi+3].[O-]C(=O)C(F)(F)F.[O-]C(=O)C(F)(F)F.[O-]C(=O)C(F)(F)F LBEKFPMWHCQYCT-UHFFFAOYSA-K 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 125000000623 heterocyclic group Chemical group 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 125000003386 piperidinyl group Chemical group 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 3
- 150000001243 acetic acids Chemical class 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 150000001491 aromatic compounds Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000002763 monocarboxylic acids Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000000160 oxazolidinyl group Chemical group 0.000 description 3
- WLJVXDMOQOGPHL-UHFFFAOYSA-N phenylacetic acid Chemical class OC(=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-UHFFFAOYSA-N 0.000 description 3
- 125000000719 pyrrolidinyl group Chemical group 0.000 description 3
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 2
- 125000004958 1,4-naphthylene group Chemical group 0.000 description 2
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 2
- ZKUJOCJJXCPCFS-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2,2,2-trifluoroacetate Chemical compound FC(F)(F)COC(=O)C(F)(F)F ZKUJOCJJXCPCFS-UHFFFAOYSA-N 0.000 description 2
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 2
- JLAKCHGEEBPDQI-UHFFFAOYSA-N 4-(4-fluorobenzyl)piperidine Chemical compound C1=CC(F)=CC=C1CC1CCNCC1 JLAKCHGEEBPDQI-UHFFFAOYSA-N 0.000 description 2
- YUBXDAMWVRMLOG-UHFFFAOYSA-N 9,9-dimethyl-2-n,7-n-bis(3-methylphenyl)-2-n,7-n-diphenylfluorene-2,7-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=C3C(C)(C)C4=CC(=CC=C4C3=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 YUBXDAMWVRMLOG-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N Propene Chemical group CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 150000001733 carboxylic acid esters Chemical class 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 150000002390 heteroarenes Chemical class 0.000 description 2
- 125000002883 imidazolyl group Chemical group 0.000 description 2
- 125000001041 indolyl group Chemical group 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- 125000002757 morpholinyl group Chemical group 0.000 description 2
- BLFVVZKSHYCRDR-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-2-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-2-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C=CC=CC2=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C3C=CC=CC3=CC=2)C=C1 BLFVVZKSHYCRDR-UHFFFAOYSA-N 0.000 description 2
- 150000005054 naphthyridines Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 125000004193 piperazinyl group Chemical group 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000002577 pseudohalo group Chemical group 0.000 description 2
- 125000001042 pteridinyl group Chemical class N1=C(N=CC2=NC=CN=C12)* 0.000 description 2
- 125000003226 pyrazolyl group Chemical group 0.000 description 2
- 125000004076 pyridyl group Chemical group 0.000 description 2
- 125000000714 pyrimidinyl group Chemical group 0.000 description 2
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 description 2
- 125000001425 triazolyl group Chemical group 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 125000000229 (C1-C4)alkoxy group Chemical group 0.000 description 1
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 description 1
- 125000006552 (C3-C8) cycloalkyl group Chemical group 0.000 description 1
- ICPSWZFVWAPUKF-UHFFFAOYSA-N 1,1'-spirobi[fluorene] Chemical compound C1=CC=C2C=C3C4(C=5C(C6=CC=CC=C6C=5)=CC=C4)C=CC=C3C2=C1 ICPSWZFVWAPUKF-UHFFFAOYSA-N 0.000 description 1
- 125000003363 1,3,5-triazinyl group Chemical group N1=C(N=CN=C1)* 0.000 description 1
- KDCBVVQAMMXRFB-UHFFFAOYSA-N 1,4,7,10,13-pentazacyclopentadecane Chemical compound C1CNCCNCCNCCNCCN1 KDCBVVQAMMXRFB-UHFFFAOYSA-N 0.000 description 1
- QBPPRVHXOZRESW-UHFFFAOYSA-N 1,4,7,10-tetraazacyclododecane Chemical compound C1CNCCNCCNCCN1 QBPPRVHXOZRESW-UHFFFAOYSA-N 0.000 description 1
- MDAXKAUIABOHTD-UHFFFAOYSA-N 1,4,8,11-tetraazacyclotetradecane Chemical compound C1CNCCNCCCNCCNC1 MDAXKAUIABOHTD-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 125000005940 1,4-dioxanyl group Chemical group 0.000 description 1
- PMWGIVRHUIAIII-UHFFFAOYSA-N 2,2-difluoropropanoic acid Chemical compound CC(F)(F)C(O)=O PMWGIVRHUIAIII-UHFFFAOYSA-N 0.000 description 1
- CGFDSIZRJWMQPP-UHFFFAOYSA-N 2,3,5-trichlorobenzoic acid Chemical compound OC(=O)C1=CC(Cl)=CC(Cl)=C1Cl CGFDSIZRJWMQPP-UHFFFAOYSA-N 0.000 description 1
- LGCODSNZJOVMHV-UHFFFAOYSA-N 2-(2,3,4,5,6-pentafluorophenyl)acetic acid Chemical compound OC(=O)CC1=C(F)C(F)=C(F)C(F)=C1F LGCODSNZJOVMHV-UHFFFAOYSA-N 0.000 description 1
- OSQPRQRJSJMQRJ-UHFFFAOYSA-N 2-(2,3,4-trifluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=C(F)C(F)=C1F OSQPRQRJSJMQRJ-UHFFFAOYSA-N 0.000 description 1
- QRAZASHLGLHKEB-UHFFFAOYSA-N 2-(2,3,6-trifluorophenyl)acetic acid Chemical compound OC(=O)CC1=C(F)C=CC(F)=C1F QRAZASHLGLHKEB-UHFFFAOYSA-N 0.000 description 1
- UXSQXUSJGPVOKT-UHFFFAOYSA-N 2-(2,3-difluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(F)=C1F UXSQXUSJGPVOKT-UHFFFAOYSA-N 0.000 description 1
- RBNNHALDGIKSBZ-UHFFFAOYSA-N 2-(2,3-difluorophenyl)ethanol Chemical compound OCCC1=CC=CC(F)=C1F RBNNHALDGIKSBZ-UHFFFAOYSA-N 0.000 description 1
- YSQLGGQUQDTBSL-UHFFFAOYSA-N 2-(2,4,5-trifluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC(F)=C(F)C=C1F YSQLGGQUQDTBSL-UHFFFAOYSA-N 0.000 description 1
- NGEKZFHYZPHNKQ-UHFFFAOYSA-N 2-(2,4,6-trifluorophenyl)acetic acid Chemical compound OC(=O)CC1=C(F)C=C(F)C=C1F NGEKZFHYZPHNKQ-UHFFFAOYSA-N 0.000 description 1
- QPKZIGHNRLZBCL-UHFFFAOYSA-N 2-(2,4-difluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=C(F)C=C1F QPKZIGHNRLZBCL-UHFFFAOYSA-N 0.000 description 1
- FUGDCKXBUZFEON-UHFFFAOYSA-N 2-(2,6-difluorophenyl)acetic acid Chemical compound OC(=O)CC1=C(F)C=CC=C1F FUGDCKXBUZFEON-UHFFFAOYSA-N 0.000 description 1
- RLEIKDZPBYTKEM-UHFFFAOYSA-N 2-(2-chloro-3,6-difluorophenyl)acetic acid Chemical compound OC(=O)CC1=C(F)C=CC(F)=C1Cl RLEIKDZPBYTKEM-UHFFFAOYSA-N 0.000 description 1
- CDUSPKFHAVQVRQ-UHFFFAOYSA-N 2-(2-chloro-4-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=C(F)C=C1Cl CDUSPKFHAVQVRQ-UHFFFAOYSA-N 0.000 description 1
- GUAIAAXDEJZRBP-UHFFFAOYSA-N 2-(2-chloro-6-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=C(F)C=CC=C1Cl GUAIAAXDEJZRBP-UHFFFAOYSA-N 0.000 description 1
- RPTRFSADOICSSK-UHFFFAOYSA-N 2-(2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1F RPTRFSADOICSSK-UHFFFAOYSA-N 0.000 description 1
- PQGPUBAARWWOOP-UHFFFAOYSA-N 2-(3,4,5-trifluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC(F)=C(F)C(F)=C1 PQGPUBAARWWOOP-UHFFFAOYSA-N 0.000 description 1
- YCAKYFIYUHHCKW-UHFFFAOYSA-N 2-(3,4-difluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=C(F)C(F)=C1 YCAKYFIYUHHCKW-UHFFFAOYSA-N 0.000 description 1
- SWSRHSCRJBEGER-UHFFFAOYSA-N 2-(3,4-dimethylphenyl)-2,2-difluoroacetic acid Chemical compound CC1=CC=C(C(F)(F)C(O)=O)C=C1C SWSRHSCRJBEGER-UHFFFAOYSA-N 0.000 description 1
- VOJLCUOUDHMLKY-UHFFFAOYSA-N 2-(3,5-difluorophenyl)-2,2-difluoroacetic acid Chemical compound OC(=O)C(F)(F)C1=CC(F)=CC(F)=C1 VOJLCUOUDHMLKY-UHFFFAOYSA-N 0.000 description 1
- IGGNSAVLXJKCNH-UHFFFAOYSA-N 2-(3,5-difluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC(F)=CC(F)=C1 IGGNSAVLXJKCNH-UHFFFAOYSA-N 0.000 description 1
- LBGHWXGWKTZILK-UHFFFAOYSA-N 2-(3-chloro-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Cl)=C1F LBGHWXGWKTZILK-UHFFFAOYSA-N 0.000 description 1
- DFBBKEDRIACDMM-UHFFFAOYSA-N 2-(3-chloro-4-fluorophenyl)-2,2-difluoroacetic acid Chemical compound OC(=O)C(F)(F)C1=CC=C(F)C(Cl)=C1 DFBBKEDRIACDMM-UHFFFAOYSA-N 0.000 description 1
- WGODGMOMOMNTRN-UHFFFAOYSA-N 2-(3-chloro-4-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=C(F)C(Cl)=C1 WGODGMOMOMNTRN-UHFFFAOYSA-N 0.000 description 1
- RVWPKAZAYUYMND-UHFFFAOYSA-N 2-(3-chlorophenyl)-2,2-difluoroacetic acid Chemical compound OC(=O)C(F)(F)C1=CC=CC(Cl)=C1 RVWPKAZAYUYMND-UHFFFAOYSA-N 0.000 description 1
- YEAUYVGUXSZCFI-UHFFFAOYSA-N 2-(3-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(F)=C1 YEAUYVGUXSZCFI-UHFFFAOYSA-N 0.000 description 1
- OSENIUPXZDFQIW-UHFFFAOYSA-N 2-(4-butylphenyl)-2,2-difluoroacetic acid Chemical compound CCCCC1=CC=C(C(F)(F)C(O)=O)C=C1 OSENIUPXZDFQIW-UHFFFAOYSA-N 0.000 description 1
- WKAZXGAJEGPUAY-UHFFFAOYSA-N 2-(4-chloro-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=C(Cl)C=C1F WKAZXGAJEGPUAY-UHFFFAOYSA-N 0.000 description 1
- DZXMMDCITYLSRC-UHFFFAOYSA-N 2-(4-chlorophenyl)-2,2-difluoroacetic acid Chemical compound OC(=O)C(F)(F)C1=CC=C(Cl)C=C1 DZXMMDCITYLSRC-UHFFFAOYSA-N 0.000 description 1
- MGKPFALCNDRSQD-UHFFFAOYSA-N 2-(4-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=C(F)C=C1 MGKPFALCNDRSQD-UHFFFAOYSA-N 0.000 description 1
- SQCCTMODTJDWCG-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-2,2-difluoroacetic acid Chemical compound CC(C)(C)C1=CC=C(C(F)(F)C(O)=O)C=C1 SQCCTMODTJDWCG-UHFFFAOYSA-N 0.000 description 1
- NOKLOLLCDCEFAK-UHFFFAOYSA-N 2-(5-chloro-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC(Cl)=CC=C1F NOKLOLLCDCEFAK-UHFFFAOYSA-N 0.000 description 1
- KSSABTOENVKMLW-UHFFFAOYSA-N 2-N,2-N,2-N',2-N'-tetrakis(4-phenylphenyl)-9,9'-spirobi[fluorene]-2,2'-diamine Chemical compound C1=CC=CC=C1C1=CC=C(N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=C3C4(C5=CC(=CC=C5C5=CC=CC=C54)N(C=4C=CC(=CC=4)C=4C=CC=CC=4)C=4C=CC(=CC=4)C=4C=CC=CC=4)C4=CC=CC=C4C3=CC=2)C=C1 KSSABTOENVKMLW-UHFFFAOYSA-N 0.000 description 1
- NIKJTQMWFFYBAM-UHFFFAOYSA-N 2-[2-(3,4-difluorophenyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC=C1C1=CC=C(F)C(F)=C1 NIKJTQMWFFYBAM-UHFFFAOYSA-N 0.000 description 1
- UIXYPLIOPWTRSX-UHFFFAOYSA-N 2-[2-(3,5-difluorophenyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC=C1C1=CC(F)=CC(F)=C1 UIXYPLIOPWTRSX-UHFFFAOYSA-N 0.000 description 1
- LNCISQVUJFQGMA-UHFFFAOYSA-N 2-[3-(3,4-difluorophenyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC(C=2C=C(F)C(F)=CC=2)=C1 LNCISQVUJFQGMA-UHFFFAOYSA-N 0.000 description 1
- MELOHJJXMCEACL-UHFFFAOYSA-N 2-[3-(3,5-difluorophenyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC(C=2C=C(F)C=C(F)C=2)=C1 MELOHJJXMCEACL-UHFFFAOYSA-N 0.000 description 1
- UGFFUDBVWPNLEA-UHFFFAOYSA-N 2-[4-(3,4-difluorophenyl)phenyl]acetic acid Chemical compound C1=CC(CC(=O)O)=CC=C1C1=CC=C(F)C(F)=C1 UGFFUDBVWPNLEA-UHFFFAOYSA-N 0.000 description 1
- INSAZACHUCPLOA-UHFFFAOYSA-N 2-[4-(3,5-difluorophenyl)phenyl]acetic acid Chemical compound C1=CC(CC(=O)O)=CC=C1C1=CC(F)=CC(F)=C1 INSAZACHUCPLOA-UHFFFAOYSA-N 0.000 description 1
- OAWAZQITIZDJRB-UHFFFAOYSA-N 2-chloro-2,2-difluoroacetic acid Chemical compound OC(=O)C(F)(F)Cl OAWAZQITIZDJRB-UHFFFAOYSA-N 0.000 description 1
- OHWGZCNPFKBCDJ-UHFFFAOYSA-N 2-chloro-6-(trifluoromethyl)benzoic acid Chemical compound OC(=O)C1=C(Cl)C=CC=C1C(F)(F)F OHWGZCNPFKBCDJ-UHFFFAOYSA-N 0.000 description 1
- ATPPNMLQNZHDOG-UHFFFAOYSA-N 2-fluoro-2-phenylacetic acid Chemical compound OC(=O)C(F)C1=CC=CC=C1 ATPPNMLQNZHDOG-UHFFFAOYSA-N 0.000 description 1
- QZTQQBIGSZWRGI-UHFFFAOYSA-N 2-n',7-n'-bis(3-methylphenyl)-2-n',7-n'-diphenyl-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=C3C4(C5=CC=CC=C5C5=CC=CC=C54)C4=CC(=CC=C4C3=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 QZTQQBIGSZWRGI-UHFFFAOYSA-N 0.000 description 1
- ZDAWFMCVTXSZTC-UHFFFAOYSA-N 2-n',7-n'-dinaphthalen-1-yl-2-n',7-n'-diphenyl-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C(=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C23C4=CC=CC=C4C4=CC=CC=C43)C2=C1 ZDAWFMCVTXSZTC-UHFFFAOYSA-N 0.000 description 1
- ZOSISXPKNIMGRP-UHFFFAOYSA-N 2-n,2-n,2-n',2-n'-tetraphenyl-9,9'-spirobi[fluorene]-2,2'-diamine Chemical compound C1=CC=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C4=CC=CC=C43)N(C=3C=CC=CC=3)C=3C=CC=CC=3)C3=CC=CC=C3C2=CC=1)C1=CC=CC=C1 ZOSISXPKNIMGRP-UHFFFAOYSA-N 0.000 description 1
- NFZUWPDINLFCGG-UHFFFAOYSA-N 2-n,7-n-bis(3-methylphenyl)-2-n,7-n,9,9-tetraphenylfluorene-2,7-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=C3C(C4=CC(=CC=C4C3=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 NFZUWPDINLFCGG-UHFFFAOYSA-N 0.000 description 1
- PQCAURRJHOJJNQ-UHFFFAOYSA-N 2-n,7-n-dinaphthalen-1-yl-2-n,7-n,9,9-tetraphenylfluorene-2,7-diamine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C(=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C2(C=3C=CC=CC=3)C=3C=CC=CC=3)C2=C1 PQCAURRJHOJJNQ-UHFFFAOYSA-N 0.000 description 1
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 1
- GIAVHGFPMPSIFI-UHFFFAOYSA-N 3-hydroxy-2,4,6-triiodobenzoic acid Chemical compound OC(=O)C1=C(I)C=C(I)C(O)=C1I GIAVHGFPMPSIFI-UHFFFAOYSA-N 0.000 description 1
- NXVNUSIHWZLMGF-UHFFFAOYSA-N 4-phenyl-N-(4-phenylphenyl)-N-[4-[9-[4-(4-phenyl-N-(4-phenylphenyl)anilino)phenyl]fluoren-9-yl]phenyl]aniline Chemical compound C1=CC=CC=C1C1=CC=C(N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C2(C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 NXVNUSIHWZLMGF-UHFFFAOYSA-N 0.000 description 1
- VXBQLSVFGIFOPQ-UHFFFAOYSA-N 5-chloro-2,4-difluorobenzoic acid Chemical compound OC(=O)C1=CC(Cl)=C(F)C=C1F VXBQLSVFGIFOPQ-UHFFFAOYSA-N 0.000 description 1
- KJEQVQJWXVHKGT-UHFFFAOYSA-N 9,9-dimethyl-2-n,7-n-dinaphthalen-1-yl-2-n,7-n-diphenylfluorene-2,7-diamine Chemical compound C1=C2C(C)(C)C3=CC(N(C=4C=CC=CC=4)C=4C5=CC=CC=C5C=CC=4)=CC=C3C2=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 KJEQVQJWXVHKGT-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 description 1
- BOPVDKBKABSTCC-UHFFFAOYSA-N CC1(C)c2ccccc2-c2cccc(c12)-c1ccccc1 Chemical compound CC1(C)c2ccccc2-c2cccc(c12)-c1ccccc1 BOPVDKBKABSTCC-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- HXASAIDUUCFAHQ-UHFFFAOYSA-N OC1(C(C(=O)O)C(=CC(=C1)I)I)I Chemical compound OC1(C(C(=O)O)C(=CC(=C1)I)I)I HXASAIDUUCFAHQ-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- KHTVJLSAICWUNU-UHFFFAOYSA-N S1CCSCCSCC1.S1CCSCCSCC1 Chemical compound S1CCSCCSCC1.S1CCSCCSCC1 KHTVJLSAICWUNU-UHFFFAOYSA-N 0.000 description 1
- STSCVKRWJPWALQ-UHFFFAOYSA-N TRIFLUOROACETIC ACID ETHYL ESTER Chemical compound CCOC(=O)C(F)(F)F STSCVKRWJPWALQ-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- ZSIQJIWKELUFRJ-UHFFFAOYSA-N azepane Chemical compound C1CCCNCC1 ZSIQJIWKELUFRJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- MRKVYAQCIIPPFP-UHFFFAOYSA-N c1ccc(cc1)-c1cccc2-c3ccccc3C(c12)(c1ccccc1)c1ccccc1 Chemical compound c1ccc(cc1)-c1cccc2-c3ccccc3C(c12)(c1ccccc1)c1ccccc1 MRKVYAQCIIPPFP-UHFFFAOYSA-N 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- PBWZKZYHONABLN-UHFFFAOYSA-N difluoroacetic acid Chemical compound OC(=O)C(F)F PBWZKZYHONABLN-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GZKHDVAKKLTJPO-UHFFFAOYSA-N ethyl 2,2-difluoroacetate Chemical compound CCOC(=O)C(F)F GZKHDVAKKLTJPO-UHFFFAOYSA-N 0.000 description 1
- IRSJDVYTJUCXRV-UHFFFAOYSA-N ethyl 2-bromo-2,2-difluoroacetate Chemical compound CCOC(=O)C(F)(F)Br IRSJDVYTJUCXRV-UHFFFAOYSA-N 0.000 description 1
- WUHVJSONZHSDFC-UHFFFAOYSA-N ethyl 2-chloro-2-fluoroacetate Chemical compound CCOC(=O)C(F)Cl WUHVJSONZHSDFC-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 125000006492 halo alkyl aryl group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 125000000904 isoindolyl group Chemical group C=1(NC=C2C=CC=CC12)* 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VMVNZNXAVJHNDJ-UHFFFAOYSA-N methyl 2,2,2-trifluoroacetate Chemical compound COC(=O)C(F)(F)F VMVNZNXAVJHNDJ-UHFFFAOYSA-N 0.000 description 1
- AWUPLMYXZJKHEG-UHFFFAOYSA-N methyl 2-chloro-2,2-difluoroacetate Chemical compound COC(=O)C(F)(F)Cl AWUPLMYXZJKHEG-UHFFFAOYSA-N 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- LBFXFIPIIMAZPK-UHFFFAOYSA-N n-[4-[4-(n-phenanthren-9-ylanilino)phenyl]phenyl]-n-phenylphenanthren-9-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C2=CC=CC=C2C=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C3=CC=CC=C3C=2)C=C1 LBFXFIPIIMAZPK-UHFFFAOYSA-N 0.000 description 1
- PKQHEBAYOGHIPX-UHFFFAOYSA-N n-[4-[9-[4-(dinaphthalen-2-ylamino)phenyl]fluoren-9-yl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=C4C=CC=CC4=CC=3)C3=CC=C(C=C3)C3(C=4C=CC(=CC=4)N(C=4C=C5C=CC=CC5=CC=4)C=4C=C5C=CC=CC5=CC=4)C4=CC=CC=C4C=4C3=CC=CC=4)=CC=C21 PKQHEBAYOGHIPX-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- YZERDTREOUSUHF-UHFFFAOYSA-N pentafluorobenzoic acid Chemical compound OC(=O)C1=C(F)C(F)=C(F)C(F)=C1F YZERDTREOUSUHF-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 239000003279 phenylacetic acid Substances 0.000 description 1
- 229960003424 phenylacetic acid Drugs 0.000 description 1
- 229960005141 piperazine Drugs 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- XIVPVSIDXBTZLM-UHFFFAOYSA-N prop-2-enyl 2,2,2-trifluoroacetate Chemical compound FC(F)(F)C(=O)OCC=C XIVPVSIDXBTZLM-UHFFFAOYSA-N 0.000 description 1
- ASAXRKSDVDALDT-UHFFFAOYSA-N propan-2-yl 2,2,2-trifluoroacetate Chemical compound CC(C)OC(=O)C(F)(F)F ASAXRKSDVDALDT-UHFFFAOYSA-N 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- 125000001422 pyrrolinyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000004151 quinonyl group Chemical group 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 1
- 125000005958 tetrahydrothienyl group Chemical group 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical compound C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- ZHXAZZQXWJJBHA-UHFFFAOYSA-N triphenylbismuthane Chemical compound C1=CC=CC=C1[Bi](C=1C=CC=CC=1)C1=CC=CC=C1 ZHXAZZQXWJJBHA-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/94—Bismuth compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/18—Metal complexes
- C09K2211/188—Metal complexes of other metals not provided for in one of the previous groups
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Plural Heterocyclic Compounds (AREA)
Abstract
本发明涉及一种用作有机电子元件基体材料的掺杂剂的第13‑16族的主族金属络合物,其包含至少一种如下式(I)的配体L:其中R1和R2可各自独立为氧、硫、硒、NH或NR4,R4选自包括烷基和芳基的组,并且可键合至R3;以及R3选自包含以下的组:烷基、长链烷基、烷氧基、长链烷氧基、环烷基、卤代烷基、芳基、亚芳基、卤代芳基、杂芳基、亚杂芳基、杂环亚烷基、杂环烷基、卤代杂芳基、烯基、卤代烯基、炔基、卤代炔基、酮芳基、卤代酮芳基、酮杂芳基、酮烷基、卤代酮烷基、酮烯基、卤代酮烯基,其中在合适的基中的一个或多个不相邻的CH2基团可独立地被‑O‑,‑S‑,‑NH‑,‑NR°‑,‑SiR°R°°‑,‑CO‑,‑COO‑,‑OCO‑,‑OCO‑O‑,‑SO2‑,‑S‑CO‑,‑CO‑S‑,‑CY1=CY2或‑C≡C‑所取代,具体地,以这样一种方式氧和/或硫原子没有彼此直接键合,并且同样可任选地被芳基或优选含有1到30个碳原子的杂芳基所取代。
Description
本申请是国际申请日为2013年5月14日、申请号为201380037752.9、发明名称为“用作有机电子基体材料的p-掺杂剂的主族金属络合物”的发明专利申请的分案申请。
本发明涉及双-或多核主族金属络合物作为有机电子基体材料的p-掺杂剂的的用途。
在有机电子中,能够基本上确定技术的两个重要的商业领域。第一个技术领域涉及使光转化为电流的有机基体材料的用途,反之亦然,而另一个领域则关注于通过有机半导体材料制造的电子元件。前一类的实例是,例如,光电探测器和有机太阳能电池(在图1中以示意图的形式示出),其将光转换为电信号或电流,以及有机发光二极管(OLEDs),其可以通过有机电子材料产生光(参见图2)。第二个技术领域是,例如,有机场效应晶体管(organic field-effect transistors)(在图3中以示意图的形式示出),其中通过掺杂减小了电极与半导体材料,或双极晶体管之间的接触电阻。
所有应用的一个共同因素是它们包括,具有取决于其组成的不同传导机制的电子传输层,作为必要功能元件。通常,有机材料固有的p-传导(p-conductivity)(空穴传导)和n-传导(电子传导)之间是有区别的。由于这些有机物质类的电特性对于元件的高效利用来说通常是不够的,因而会将它们与能够改善层的电特性的其它化合物混合。这通常通过掺杂金属或其它有机化合物来完成。实现传导性的显著改善的一种方法是金属络合物的添加,特别是过渡金属络合物的添加。
例如,WO 2005 086251描述了用于形成n-传导层的掺杂剂,其可以包含以下结构:
该类化合物的结构在文献中也被称为“桨轮型络合物”(“paddle wheelcomplex”)。更具体地,该公开描述了金属络合物作为n-掺杂剂用于掺杂有机半导体基体材料以改变其电性能的用途。如对所呈现的化合物进行的描述,相对于基体材料而言,其可用作n-掺杂剂。
另一种使用路易斯酸性金属络合物来掺杂p-传导传输层的方法由Endo等人披露(Jpn.J.Appl.Phys.第41卷(2002)L358-L360)。该参考文献描述了具有p-传导层的有机电致发光器件(organic electroluminescent devices),其通过共掺杂FeCl3和芳基胺衍生物(例如N,N'-二萘基-N,N-二苯基联苯胺(α-NPD))来制备。然而,所述元件的显著缺点也被描述在其中,例如发光的熄灭(extinguishment)和本征吸收(intrinsic absorption)的增加。
其它通过掺杂来配置有机半导体的双极晶体管的方法另外公开于DE102010041331中。
另外已知的是多核金属络合物,例如参见WO 2008/154915。
然而,所出现的问题是找到其它材料,其适合作为有机电子基体材料中的p-掺杂剂,特别是空穴传输材料(hole transporters),并提高含有这些层的元件的效率。
所述问题通过本发明的权利要求1中的有机电子元件得以解决。
因此,提出一种具有基体的有机电子元件,其中所述基体具有作为p-掺杂剂的第13-15族的主族金属络合物,其相应地包含至少一种具有如下结构的配体L:
其中R1和R2各自独立为氧、硫、硒、NH或NR4,其中R4选自包含烷基和芳基的组,并且可键合至R3;以及
R3选自包括以下的组:烷基、长链烷基、烷氧基、长链烷氧基、环烷基、卤代烷基、芳基、亚芳基、卤代芳基、杂芳基、亚杂芳基(heteroarylenes)、杂环亚烷基(heterocycloalkylenes)、杂环烷基、卤代杂芳基、烯基、卤代烯基、炔基、卤代炔基、酮芳基、卤代酮芳基、酮杂芳基、酮烷基、卤代酮烷基、酮烯基、卤代酮烯基,其中合适的基团中的一个或多个不相邻的CH2基团可独立地被-O-,-S-,-NH-,-NR°-,-SiR°R°°-,-CO-,-COO-,-OCO-,-OCO-O-,-SO2-,-S-CO-,-CO-S-,-CY1=CY2或-C≡C-所取代,以这样的方式,氧和/或硫原子彼此没有直接键合,并且同样可任选地被芳基或优选含有1到30个碳原子的杂芳基所取代(从CH2–H的意义上来讲,末端的CH3基团被认为是CH2基团)。
已经发现令人惊讶的是,这些材料适合用作有机电子元件基体材料中的p-掺杂剂。更具体地,这些材料通常具有一个或多个以下优点:
-所述材料与来自不同的来源的基体材料一起具有良好的共汽化性(co-evaporability),从而形成组成经定义的掺杂基体层。
-所述材料可以通过简单的方式获得,并且不需要任何复杂的制备工艺。
-掺杂强度可以适应于基体。
-传导性可以通过物质的浓度和类型来调节。
在本发明的上下文中,术语“有机电子元件”意味着和/或包括尤其是有机晶体管、有机发光二极管、发光电化学电池、有机太阳能电池、光电二极管和一般的有机光伏电池。
在本发明的上下文中,术语“p-掺杂”意味着或包括尤其是具有路易斯酸度和/或能够与基体材料形成络合物的材料,其中这些基体材料可充当路易斯酸(如果仅就形式意义而言)。
这样的主族金属络合物基体材料(空穴导体)可具有例如以下的结构(此处示出的结构以铋作为金属并通过氮配位):
根据IUPAC,术语“第13-15族的主族金属络合物”应被理解为第13-15族的金属,即铝、镓、铟、硅、锗、锡、铅、铊、砷、锑、铋或它们的混合物。优选的是14族和15族的金属,即硅、锗、锡、铅、砷、锑、铋,更优选锡和/或铋。
一般基团定义:在说明书和权利要求书中,要求保护和描述了一般基团(例如烷基、烷氧基、芳基等)。除非另有说明,在本发明的上下文中给予优选的是使用在以一般术语描述的基团的范围内的基团:
烷基:直链和支链C1-C8-烷基,
长链烷基:直链和支链C5-C20烷基,
烯基:C2-C6-烯基,
环烷基:C3-C8-环烷基,
烷氧基:C1-C6-烷氧基,
长链烷氧基:直链和支链C5-C20烷氧基,
亚烷基:选自包含以下的组:亚甲基、1,1-亚乙基(1,1-ethylene)、1,2-亚乙基、1,1-亚丙基(1,1-propylidene)、1,2-丙烯(1,2-propylene)、1,3-丙烯(1,3-propylene)、2,2-亚丙基(2,2-propylidene)、丁-2-醇-1,4-二基、丙-2-醇-1,3-二基、1,4-丁烯(1,4-butylene)、环己烷-1,1-二基、环己烷-1,2-二基、环己烷-1,3-二基、环己烷-1,4-二基、环戊烷-1,1-二基、环戊烷-1,2-二基、和环戊烷-1,3-二基,
芳基:选自分子量低于300Da的芳族化合物,
亚芳基:选自包括以下的组:1,2-亚苯基、1,3-亚苯基、1,4-亚苯基、1,2-亚萘基、1,3-萘烯基(1,3-naphthalenylene)、1,4-亚萘基、2,3-亚萘基、1-羟基-2,3-亚苯基、1-羟基-2,4-亚苯基、1-羟基-2,5-亚苯基、和1-羟基-2,6-亚苯基,
杂芳基:选自包括以下的组:吡啶基、嘧啶基、吡嗪基、三唑基、哒嗪基、1,3,5-三嗪基、喹啉基(quinoninyl)、异喹啉基(isoquinoninyl)、喹喔啉基、咪唑基、吡唑基、苯并咪唑基、噻唑基、唑烷基、吡咯基、噻吩基、咔唑基、吲哚基(indolyl)、和异吲哚基,其中所述的杂芳基可以通过所选择的杂芳基的环中的任何原子与所述化合物键合。
杂亚芳基:选自包括以下的组:吡啶二基、喹啉二基、吡唑并二基(pyrazodiyl)、吡唑二基(pyrazolediyl)、三唑二基、吡嗪二基(pyrazinediyl)、噻吩二基、和咪唑二基,其中所述杂亚芳基可以通过所选择的杂芳基的环中的任何原子在化合物中起到桥梁的作用,以下是特别优选的:吡啶-2,3-二基、吡啶-2,4-二基、吡啶-2,5-二基、吡啶-2,6-二基、吡啶-3,4-二基、吡啶-3,5-二基、喹啉-2,3-二基、喹啉-2,4-二基、喹啉-2,8-二基、异喹啉-1,3-二基、异喹啉-1,4-二基、吡唑-1,3-二基、吡唑-3,5-二基、三唑-3,5-二基、三唑-1,3-二基、吡嗪-2,5-二基、和咪唑-2,4-二基、噻吩-2,5-二基、噻吩-3,5-二基、选自包括以下的组的C1-C6杂环烷基:哌啶基(piperidinyl)、哌啶(piperidine)、1,4-哌嗪、四氢噻吩、四氢呋喃、1,4,7-三氮杂环壬烷、1,4,8,11-四氮杂环十四烷、1,4,7,10,13-五氮杂环十五烷、1,4-二氮杂-7-硫杂环壬烷(1,4-diaza-7-thiacyclononane)、1,4-二氮杂-7-氧代环壬烷(1,4-diaza-7-oxacyclononane)、1,4,7,10-四氮杂环十二烷、1,4-二恶烷、1,4,7-三硫杂环壬烷(1,4,7-trithiacyclononane)、吡咯烷、和四氢吡喃,其中所述杂亚芳基可以通过所选择的杂芳基的环中的任何原子与所述C1-C6-烷基键合。
杂环亚烷基:选自包括以下的组:哌啶-1,2-亚基、哌啶-2,6-亚基、哌啶-4,4-亚基、1,4-哌嗪-1,4-亚基、1,4-哌嗪-2,3-亚基、1,4-哌嗪-2,5-亚基、1,4-哌嗪-2,6-亚基、1,4-哌嗪-1,2-亚基、1,4-哌嗪-1,3-亚基、1,4-哌嗪-1,4-亚基、四氢噻吩-2,5-亚基、四氢噻吩-3,4-亚基、四氢噻吩-2,3-亚基、四氢呋喃-2,5-亚基、四氢呋喃-3,4-亚基、四氢呋喃-2,3-亚基、吡咯烷-2,5-亚基、吡咯烷-3,4-亚基、吡咯烷-2,3-亚基、吡咯烷-1,2-亚基、吡咯烷-1,3-亚基、吡咯烷2,2-亚基、1,4,7-三氮杂环壬烷-1,4-亚基、1,4,7-三氮杂环壬烷-2,3-亚基、1,4,7-三氮杂环壬烷-2,9-亚基、1,4,7-三氮杂环壬烷-3,8-亚基、1,4,7-三氮杂环壬烷-2,2-亚基、1,4,8,11-四氮杂环十四碳-1,4-亚基(1,4,8,11-tetraazacyclotetradec-1,4-ylene)、1,4,8,11-四氮杂环十四碳-1,8-亚基(1,4,8,11-tetraazacyclotetradec-1,8-ylene)、1,4,8,11-四氮杂环十四碳-2,3-亚基(1,4,8,11-tetraazacyclo-tetradec-2,3-ylene)、1,4,8,11-四氮杂环十四碳-2,5-亚基(1,4,8,11-tetraazacyclotetradec-2,5-ylene)、1,4,8,11-四氮杂环十四碳-1,2-亚基(1,4,8,11-tetraazacyclotetradec-1,2-ylene)、1,4,8,11-四氮杂环十四碳-2,2-亚基(1,4,8,11-tetraaza-cyclotetradec-2,2-ylidene)、1,4,7,10-四氮杂环十四碳-1,4-亚基(1,4,7,10-tetraazacyclododec-1,4-ylene)、1,4,7,10-四氮杂环十四碳-1,7-亚基(1,4,7,10-tetraazacyclododec-1,7-ylene)、1,4,7,10-四氮杂环十四碳-1,2-亚基(1,4,7,10-tetraazacyclododec-1,2-ylene)、1,4,7,10-四氮杂环十四碳-2,3-亚基(1,4,7,10-tetraazacyclododec-2,3-ylene)、1,4,7,10-四氮杂环十四碳-2,2-亚基(1,4,7,10-tetraazacyclododec-2,2-ylidene)、1,4,7,10,13-五氮杂环十四碳-1,4-亚基(1,4,7,10,13-pentaazacyclopentadec-1,4-ylene)、1,4,7,10,13-五氮杂环十四碳-1,7-亚基(1,4,7,10,13-pentaazacyclopentadec-1,7-ylene)、1,4,7,10,13-五氮杂环十四碳-2,3-亚基(1,4,7,10,13-pentaazacyclopentadec-2,3-ylene)、1,4,7,10,13-五氮杂环十四碳-1,2-亚基(1,4,7,10,13-pentaazacyclo-pentadec-1,2-ylene)、1,4,7,10,13-五氮杂环十四碳-2,2-亚基(1,4,7,10,13-pentaazacyclopentadec-2,2-ylidene)、1,4-二氮杂-7-硫杂环壬-1,4-亚基(1,4-diaza-7-thiacyclonon-1,4-ylene)、1,4-二氮杂-7-硫杂环壬-1,2-亚基(1,4-diaza-7-thia-cyclonon-1,2-ylene)、1,4-二氮杂-7-硫杂环壬-2,3-亚基(1,4-diaza-7-thiacyclonon-2,3-ylene)、1,4-二氮杂-7-硫杂环壬-6,8-亚基(1,4-diaza-7-thiacyclonon-6,8-ylene)、1,4-二氮杂-7-硫杂环壬-2,2-亚基(1,4-diaza-7-thiacyclonon-2,2-ylidene)、1,4-二氮杂-7-氧杂环壬-1,4-亚基(1,4-diaza-7-oxacyclonon-1,4-ylene)、1,4-二氮杂-7-氧杂环壬-1,2-亚基(1,4-diaza-7-oxa-cyclonon-1,2-ylene)、1,4-二氮杂-7-氧杂环壬-2,3-亚基(1,4-diaza-7-oxacyclonon-2,3-ylene)、1,4-二氮杂-7-氧杂环壬-6,8-亚基(1,4-diaza-7-oxacyclonon-6,8-ylene)、1,4-二氮杂-7-氧杂环壬-2,2-亚基(1,4-diaza-7-oxacyclonon-2,2-ylidene)、1,4-二恶烷-2,3-亚基(1,4-dioxan-2,3-ylene)、1,4-二恶烷-2,6-亚基(1,4-dioxan-2,3-ylene)、1,4-二恶烷-2,2-亚基(1,4-dioxan-2,6-ylene)、四氢吡喃-2,3-亚基、四氢吡喃-2,6-亚基、四氢吡喃-2,5-亚基、四氢吡喃-2,2-亚基、1,4,7-三硫杂环壬-2,3-亚基(1,4,7-trithiacyclonon-2,3-ylene)、1,4,7-三硫杂环壬-2,9-亚基(1,4,7-trithia-cyclonon-2,9-ylene)、和1,4,7-三硫杂环壬-2,2-亚基(and1,4,7-trithiacyclonon-2,2-ylidene),
杂环烷基:选自包括以下的组:吡咯啉基、吡咯烷基、吗啉基、哌啶基、哌嗪基、六亚甲基亚胺、1,4-哌嗪基、四氢噻吩基、四氢呋喃基、1,4,7-三氮杂环壬基、1,4,8,11-四氮杂环十四烷基、1,4,7,10,13-五氮杂环十四烷基、1,4-二氮杂-7-硫杂环壬基(1,4-diaza-7-thiacyclo-nonanyl)、1,4-二氮杂-7-氧杂环戊基(1,4-diaza-7-oxacyclononanyl)、1,4,7,10-四氮杂环十二烷基、1,4-二氧六环基、1,4,7-三硫杂环壬基、四氢吡喃基、和唑烷基,其中所述杂环烷基可以通过所选择的杂环烷基的环中的任何原子与所述化合物键合。胺:-N(R)2基团,其中各个R独立地选自:氢、C1-C6-烷基、C1-C6-烷基-C6H5、和苯基,其中,当R'均为C1-C6-烷基时,两个R′可一起形成-NC3至-NC5杂环,其中剩余烷基链形成杂环上的烷基取代基。
卤素:选自包括以下的组:F、C1、Br和I
卤代烷基:选自包括以下的组:单-、二-、三-、多-和全卤代直链和支链C1-C8-烷基,尤其是-CF3。
拟卤素(pseudohalogen):选自包括以下的组:-CN,-SCN,-OCN,N3,-CNO和–SeCN。
羧酸酯:-C(O)OR基团,其中R选自:氢、C1-C6-烷基、苯基、C1-C6-烷基-C6H5、
羰基:-C(O)R基团,其中R选自:氢、C1-C6-烷基、苯基、C1-C6-烷基-C6H5和选自-NR′2的组中的胺,其中各个R′独立地选自:氢、C1-C6-烷基、C1-C6-烷基-C6H5和苯基,其中,当R′均为C1-C6烷基时,两个R′可一起形成-NC3至-NC5杂环,其中剩余烷基链形成杂环上的烷基取代基。
除非另有说明,以下基团是一般基团定义中的更优选的基团:
烷基:直链和支链C1-C6-烷基,
长链烷基:直链和支链C5-C10烷基,优选C6-C8烷基,
烯基:C3-C6-烯基,
环烷基:C6-C8-环烷基,
烷氧基:C1-C4-烷氧基,
长链烷氧基:直链和支链C5-C10烷氧基,优选直链C6-C8烷氧基,
亚烷基:选自包含以下的组:亚甲基、1,2-亚乙基、1,3-丙烯、丁-2-醇-1,4-二基、1,4-丁烯、环己烷-1,1-二基、环己烷-1,2-二基、环己烷-1,4-二基、环戊烷-1,1-二基、和环戊烷-1,2-二基,
芳基:选自包含以下的组:苯基、联苯基、萘基、蒽基、和菲基,
亚芳基:选自包括以下的组:1,2-亚苯基、1,3-亚苯基、1,4-亚苯基、1,2-亚萘基、1,4-萘烯基、2,3-亚萘基和1-羟基-2,6-亚苯基,
杂芳基:选自包括以下的组:吡啶基、嘧啶基、喹啉基、吡唑基、三唑基、异喹啉基、咪唑基、和唑烷基,其中所述的杂芳基可以通过所选的杂芳基的环中的任何原子与所述化合物键合。
杂亚芳基:选自包括以下的组:吡啶-2,3-二基、吡啶-2,4-二基、吡啶-2,6-二基、吡啶-3,5-二基、喹啉-2,3-二基、喹啉-2,4-二基、异喹啉-1,3-二基、异喹啉-1,4-二基、吡唑3,5-二基、和咪唑2,4-二基、
杂环烷基:选自包括以下的组:吡咯烷基、吗啉基、哌啶基(piperidinyl)、哌啶基(piperidinyl)、1,4-哌嗪基、四氢呋喃基、1,4,7-三氮杂环壬基、1,4,8,11-四氮杂环十四烷基、1,4,7,10,13-五氮杂环十五烷基、1,4,7,10-四氮杂环十二烷基、和哌嗪基,其中所述杂亚芳基可以通过所选择的杂芳基的环中的任何原子与所述化合物键合。
杂环亚烷基:选自包括以下的组:哌啶-2,6-亚基、哌啶-4,4-亚基、1,4-哌嗪-1,4-亚基、1,4-哌嗪-2,3-亚基、1,4-哌嗪-2,6-亚基、四氢噻吩-2,5-亚基、四氢噻吩-3,4-亚基、四氢呋喃-2,5-亚基、四氢呋喃-3,4-亚基、吡咯烷-2,5-亚基、吡咯烷2,2-亚基、1,4,7-三氮杂环壬烷-1,4-亚基、1,4,7-三氮杂环壬烷2,3-亚基、1,4,7-三氮杂环壬烷-2,2-亚基、1,4,8,11-四氮杂环十四碳-1,4-亚基、1,4,8,11-四氮杂环十四碳-1,8-亚基、1,4,8,11-四氮杂环十四碳-2,3-亚基、1,4,8,11-四氮杂环十四碳-2,2-亚基、1,4,7,10-四氮杂环十四碳-1,4-亚基、1,4,7,10-四氮杂环十四碳-1,7-亚基、1,4,7,10-四氮杂环十四碳-2,3-亚基、1,4,7,10-四氮杂环十四碳-2,2-亚基、1,4,7,10,13-五氮杂环十四碳-1,4-亚基、1,4,7,10,13-五氮杂环十四碳-1,7-亚基、1,4-二氮杂-7-硫杂环壬-1,4-亚基、1,4-二氮杂-7-硫杂环壬-2,3-亚基、1,4-二氮杂-7-硫杂环壬-2,2-亚基、1,4-二氮杂-7-氧杂环壬-1,4-亚基、1,4-二氮杂-7-氧杂环壬-2,3-亚基、1,4-二氮杂-7-氧杂环壬-2,2-亚基、1,4-二恶烷-2,6-亚基、1,4-二恶烷-2,2-亚基、四氢吡喃-2,6-亚基、四氢吡喃-2,5-亚基、和四氢吡喃-2,2-亚基、-C1-C6-杂环烷基,其中所述杂环烷基选自包括以下的组:哌啶基、1,4-哌嗪基、四氢呋喃、1,4,7-三氮杂环壬烷基、1,4,8,11-四氮杂环十四烷基、1,4,7,10,13-五氮杂环十五烷基、1,4,7,10-四氮杂环十二烷基、和吡咯烷基,其中所述杂环烷基可以通过所选择的杂环烷基的环中的任何原子与所述化合物键合。
胺:-N(R)2基团,其中各个R独立地选自:氢、C1-C6-烷基、和苯基,
卤素:选自包括以下的组:F和C1,
羧酸酯:-C(O)OR基团,其中R选自:氢、C1-C6-烷基、和苯基,
羰基:-C(O)R基团,其中R选自:氢、C1-C6-烷基、苯基和选自-NR′2的组中的胺,其中各个R′独立地选自:氢、C1-C6-烷基、和苯基。
在一个优选的实施方式中,R3为卤代烷基,更优选为具有1-8个碳原子,更优选1-4个的全氟烷基、卤代芳基,更优选全氟芳基、卤代烷芳基,尤其优选(全)氟代烷基芳基和卤代杂芳基,特别优选的是全氟杂芳基(perfluoroheteroaryl)。
配体L的其它实例优选包括氟化苯甲酸,例如2-(三氟甲基)苯甲酸、3,5-二氟苯甲酸、3-羟基-2,4,6-三碘苯甲酸、3-氟-4-甲基苯甲酸、3-(三氟甲氧基)苯甲酸、4-(三氟甲氧基)-苯甲酸、4-氯-2,5-二氟苯甲酸、2-氯-4,5-二氟苯甲酸、2,4,5-三氟苯甲酸、2-氟苯甲酸、4-氟苯甲酸、2,3,4-三氟苯甲酸、2,3,5-三氟苯甲酸、2,3-二氟苯甲酸、2,4-双(三氟甲基)苯甲酸、2,4-二氟苯甲酸、2,5-二氟苯甲酸、2,6-双(三氟甲基)苯甲酸、2,6-二氟苯甲酸、2-氯-6-氟苯甲酸、2-氟-4-(三氟甲基)-苯甲酸、2-氟-5-(三氟甲基)苯甲酸、2-氟-6-(三氟甲基)苯甲酸、3,4,5-三氟苯甲酸、3,4-二氟苯甲酸、3,5-双(三氟甲基)苯甲酸、3-(三氟甲基)苯甲酸、3-氯-4-氟苯甲酸、3-氟-5-(三氟甲基)苯甲酸、3-氟苯甲酸、4-氟-2-(三氟甲基)苯甲酸、4-氟-3-(三氟甲基)苯甲酸、5-氟-2-甲基苯甲酸、2-(三氟甲氧基)苯甲酸、2,3,5-三氯苯甲酸、4-(三氟甲基)苯甲酸、五氟苯甲酸、2,3,4,5-四氟苯甲酸,
氟化或非氟化的苯乙酸,例如2-氟苯乙酸、3-氟苯乙酸、4-氟苯乙酸、2,3-二氟苯乙酸、2,4-二氟苯乙酸、2,6-二氟苯乙酸、3,4-二氟苯乙酸、3,5-二氟苯乙酸、五氟苯乙酸、2-氯-6-氟苯乙酸、2-氯-3,6-二氟苯乙酸、3-氯-2,6-二氟-苯乙酸、3-氯-4-氟苯乙酸、5-氯-2-氟苯乙酸、2,3,4-三氟苯乙酸、2,3,5-三氟苯乙酸、2,3,6-三氟苯乙酸、2,4,5-三氟苯乙酸、2,4,6-三氟苯乙酸、3,4,5-三氟苯乙酸、3-氯-2-氟苯乙酸、α-氟苯乙酸、4-氯-2-氟苯乙酸、2-氯-4-氟苯乙酸、α,α-二氟苯乙酸、2,2-二氟-2-苯乙酸乙酯(ethyl2,2-difluoro-2-phenylacetate)、和
氟化或非氟化的乙酸,例如三氟乙酸甲酯、烯丙基三氟乙酸酯、三氟乙酸乙酯、三氟乙酸异丙酯、2,2,2-三氟乙基三氟乙酸酯(2,2,2-trifluoroethyl trifluoroacetate)、二氟乙酸、三氟乙酸、氯代二氟乙酸甲酯、溴代二氟乙酸乙酯、二氟氯乙酸、氟氯乙酸乙酯(ethyl chlorofluoroacetate)、二氟乙酸乙酯、(3-氯苯基)-二氟乙酸、(3,5-二氟苯基)二氟乙酸、(4-丁基苯基)二氟乙酸、(4-叔丁基苯基)-二氟乙酸、(3,4-二甲基苯基)二氟乙酸、(3-氯-4-氟苯基)二氟乙酸、(4-氯苯基)-二氟乙酸、2-联苯基-3',5'-二氟乙酸、3-联苯基-3',5'-二氟乙酸、4-联苯基-3',5'-二氟乙酸、2-联苯基-3',4'-二氟乙酸、3-联苯基-3',4'-二氟乙酸、4-联苯基-3',4'-二氟乙酸、和2,2-二氟丙酸,或它们的高级同系物(higherhomologs)。如果配体L具有酸性基团,所述基团在一个优选的实施方式中可以是去质子化的形式。
在另一个优选的实施方式中,R3选自包括以下的组:
其中Y1-Y5各自独立地选自包含以下的组:C-F、C-CF3、C-NO2、C-CN、C-卤素、C-拟卤素和N。
在优选的实施方式中,R3选自包括以下的组:
其中Y1-Y7各自独立地选自包含以下的组:C-F、C-CF3、C-NO2、C-CN、C-卤素、C-拟卤素和N。
在优选的实施方式中,R3选自包括以下的组:
其中Y1-Y7各自独立地选自包含以下的组:C-F、C-CF3、C-NO2、C-CN、C-卤素、C-拟卤素和N。
在优选的实施方式中,R3选自包括以下的组:
在一个优选的实施方式中,R3选自包含以下的组:卤代,优选全卤代和/或拟卤代的蝶啶、异蝶啶、萘啶、喹喔啉、氮杂喹喔啉。
在一个优选的实施方式中,金属络合物(当基体材料不存在时)是路易斯酸性的,这意味着金属络合物用作电子对受体。这已经被发现对于与基体材料的相互作用来说是特别优选的。
在一个优选的实施方式中,金属络合物(当基体材料不存在时)具有至少一个未被占用的或部分可用的配位点(coordination site)。这也已经被发现对于与基体材料的相互作用来说是特别优选的。
在一个优选的实施方式中,可在气相中或在液相中对化合物进行处理。在气相沉积的情况下,掺杂剂和基体材料(优选来自不同的来源)在高真空度下共汽化,并沉积为层。在由液相处理的情况下,金属络合物和基体材料溶解在溶剂中并通过印刷技术(旋涂、刀涂、狭缝式涂布等)沉积。最终层通过汽化溶剂来获得。可以通过金属络合物与基体材料的不同的质量比来实现任何期望的掺杂比。
特别优选的是,可通过溶剂法(solvent process)来处理以下的空穴导体:
另外,特别优选地可以通过溶剂法处理被称为“小分子”的基体材料。该类物质是本领域技术人员已知的,并且包括,例如,螺-TAD(spiro-TAD)(2,2',7,7'-四(N,N'-二苯基氨基)-9,9'-螺二芴)(2,2',7,7'-tetrakis(N,N-diphenylamino)-9,9'-spirobi-fluorene)和螺-TTB(2,2',7,7'-四(N,N'-二-对-甲基-苯基氨基)-9,9'-螺二芴)(2,2',7,7'-tetrakis(N,N'-di-p-methyl-phenylamino)-9,9'-spirobifluorene),以及其他在本申请中列为基体材料的材料。
在优选的实施例中,金属络合物是单-或双-或多核金属络合物。更具体地,金属络合物可以是固体形式的多核金属络合物。固体形式的多核金属络合物可在汽化期间解聚(depolymerize),并且有利地在气相中处于单核形式。由于可从而有效地实现络合物与基体材料特别精细的混合和良好的结合,因此该实施方式尤其有利。
在一个优选的实施方式中,至少一个配体L位于两个金属之间的桥联装置上。
在一个优选的实施方式中,所述金属络合物具有经验式M2L4(其中M=金属,且L=配体),其中,所述金属和各配体均可独立地按如上定义来选择。
在另一个优选的实施方式中,金属络合物可含有金属原子M,诸如Sn、Sb、Pb或铋。更优选地,金属络合物可以是结构如下的单核
或是结构如下的双核
不受理论的束缚,存在金属通过单核络合物中的配体的终端配位。对于双核络合物来说,存在金属原子的二齿或三齿配位(bi-or tridentate coordination)。如果使用不同的金属原子形成二齿络合物,则得到的是异双金属络合物。
更优选地,主族金属络合物包含铋。在该背景下,尤其优选的是铋主族金属络合物:
不受理论(如所选定的配体的作用)的束缚,II价氧化态可具有如下桨轮结构(paddle-wheel structure):
不受理论的束缚,III价氧化态(MLn=3)不具有桨轮结构。这些化合物通常为单核或多核形式的固体形式,并且可以在汽化过程中解聚。
V价氧化态,其中,在特定实施方式中,主族金属络合物可包含具有如下结构的处于V价氧化态的铋:
在该优选情况下,Ari可独立地选自取代或未取代的芳族化合物或杂芳族化合物的组。具体实施方式包括部分氟化或全氟化的芳族化合物或杂芳族化合物。另外,Ari可以更优选地选自非氟化或氟化的羧酸盐的组或通常选自如本申请所列的配体L的组中。
在另一个实施方式中,金属络合物具有结构MLm,其中M=金属,L=配体且m=1至10,其中,当m>1时,所有L是彼此独立的。这些金属络合物是优选的,特别是在锡和铋的情况下;在这种情况下,根据氧化态,对于锡优选m=2,或对于铋优选m=2、4和3或5。
在本发明的可替代的实施方式中,金属络合物具有结构ML2L'n,其中M=金属,L=配体,如上定义,而L'=与L不相同的配体,其选自芳基、杂芳基、卤代芳基和卤代杂芳基的组,其中n可以是0至3,而且如果n>1,则每个所选的L'是彼此独立的。这些金属络合物是优选的,特别是在锡和铋的情况下;在这种情况下,优选地,根据氧化态,对于锡n=2,或对于铋n=1或3,以及n=0。
在一个优选的实施方式中,光电子元件的基体材料包括一种或多种以下材料:
NPB(N,N'-二(萘-1-基)-N,N'-二(苯基)联苯胺)
β-NPB(N,N'-二(萘-2-基)-N,N'-二(苯基)联苯胺)
TPD(N,N'-二(3-甲基苯基)-N,N'-二(苯基)联苯胺)
螺-TPD(N,N'-二(3-甲基苯基)-N,N'-二(苯基)联苯胺)
螺-NPB(N,N'-二(萘-1-基)-N,N'-二(苯基)螺)
DMFL-TPD(N,N'-二(3-甲基苯基)-N,N'-二(苯基)-9,9-二甲基芴)
DMFL-NPB(N,N'-二(萘-1-基)-N,N'-二(苯基)-9,9-二甲基芴)
DPFL-TPD(N,N'-二(3-甲基苯基)-N,N'-二(苯基)-9,9-二苯基芴)
DPFL-NPB(N,N'-二(萘-1-基)-N,N'-二(苯基)-9,9-二苯基芴)
螺-TAD(2,2',7,7'-四(N,N-二苯基氨基)-9,9'-螺二芴)
9,9-二[4-(N,N-二(联苯基-4-基)氨基)苯基]-9H-芴
9,9-二[4-(N,N-二(萘-2-基)氨基)苯基]-9H-芴
9,9-二[4-(N,N'-二(萘-2-基)-N,N'-二苯基氨基)-苯基]-9H-芴
N,N'-二(菲-9-基)-N,N'-二(苯基)联苯胺
2,7-二[N,N-二(9,9-螺-二芴-2-基)氨基]-9,9-螺二芴
2,2'-二[N,N-二(联苯基-4-基)氨基]-9,9-螺二芴
2,2'-二(N,N-二苯基氨基)-9,9-螺二芴
二[4-(N,N-二苄基)苯基]环己烷
2,2',7,7'-四(N,N-二苄基)螺二芴
N,N,N',N'-四萘-2-基联苯胺
螺-TTB(2,2',7,7'-四(N,N'-二-对-甲基-苯基氨基)-9,9'-螺二芴)
这些材料已被发现可用作(光)电子元件中的基体材料。
在本发明的一个优选实施方式中,以摩尔计,基于基体材料的摩尔数的金属络合物的掺杂水平为≥0.1%至≤50%。这已经被发现适合于此用途。优选地,掺杂水平为≥0.5%至≤15%,更优选≥1%至≤5%。
在一个优选的实施方式中,R3选自包含以下的组:卤代,优选全卤代和/或拟卤代的蝶啶、异蝶啶、萘啶、喹喔啉、氮杂喹喔啉。
在一个更加优选的实施方式中,所述金属络合物可包含至少一种配体L,其选自未被取代的、部分氟化的或全氟化的有机羧酸的组。有机羧酸通常可选自脂肪族饱和一元羧酸、不饱和一元羧酸、脂肪族饱和二元羧酸、脂肪族饱和三羧酸、脂肪族不饱和二羧酸、芳族羧酸、杂环羧酸、脂肪族不饱和一元羧酸。特别优选的,部分或全氟化的配体L选自乙酸、苯乙酸和/或苯甲酸的被取代的和未被取代的化合物,并通过上述实施例列出。特别优选,非氟化、部分氟化或全氟化的乙酸。在另一个优选的实施方式中,在络合物金属原子之间有一个或多个多齿桥联(polydentate bridging)配体L。
本发明还涉及包含至少一种具有如下结构的配体L的第13-15族金属络合物作为用于电子元件基体材料的p-掺杂剂的用途:
其中R1和R2各自独立为氧、硫、硒、NH或NR4,其中R4选自包含烷基和芳基的组,并且可以键合至R3;以及
R3选自包括以下的组:烷基、长链烷基、烷氧基、长链烷氧基、环烷基、卤代烷基、芳基、亚芳基、卤代芳基、杂芳基、亚杂芳基、杂环亚烷基、杂环烷基、卤代杂芳基、烯基、卤代烯基、炔基、卤代炔基、酮芳基、卤代酮芳基、酮杂芳基、酮烷基、卤代酮烷基、酮烯基、卤代酮烯基,其中合适的基团中的一个或多个不相邻的CH2基团可独立地被-O-,-S-,-NH-,-NR°-,-SiR°R°°-,-CO-,-COO-,-OCO-,-OCO-O-,-SO2-,-S-CO-,-CO-S-,-CY1=CY2或-C≡C-所取代,以这样的方式,氧和/或硫原子彼此没有直接键合,并且同样可任选地被芳基或优选含有1到30个碳原子的杂芳基所取代(从CH2–H的意义上来讲,末端的CH3基团被认为是CH2基团)。
根据本发明以及工作实例中要求和描述而使用的上述元件不会受到其大小、配置、材料选择和技术设计方面的影响,因此使用领域中已知的选择标准可以被不加限制地应用。
本发明的主题的其它细节、特征和优点通过从属权利要求以及下述对附图及相应的实施例的说明变得显而易见。附图示出了:
图1为有机发光二极管(10)的结构示意图。所述发光二极管由玻璃层(1)、透明的导电氧化物(TCO)或PEDOT:PSS或PANI层(2)、空穴注入层(3)、空穴传输层(HTL)(4)、发射层(EML)(5)、空穴阻挡层(HBL)(6)、电子传输层(ETL)(7)、电子注入层(8)和阴极层(9)组成;
图2为一种具有将光(21)转换成电流的PIN结构(20)的有机太阳能电池的结构示意图。该太阳能电池由一层氧化铟锡(22)、p-掺杂层(23);吸收剂层(24);n-掺杂层(25)以及金属层(26)组成;
图3为有机场效应晶体管(30)的可能的横截面的示意图。在衬底(31)上施加了栅电极(32)、栅极电介质(33),源极和漏极接触(34+35)和有机半导体(36)。阴影线区域示出了接触掺杂有益的点。
图4为本发明的第一实施方式中的未掺杂的基体材料和掺杂的基体材料的电流密度-电压图;
图5为图4中的材料的吸收-波长的图;
图6是图4中的材料的光致发光-波长的图;
图7为图4中的掺杂材料的反射-波长的图;
图8为本发明的第二实施方式中的未掺杂的基体材料和多个掺杂的基体材料的电流密度-电压的图;
图9为图8中的材料的吸收-波长的图;
图10是图8中的掺杂材料的光致发光-波长的图;
图11为图8中的材料的反射-波长的图;
图12是本发明的第三实施方式中的未掺杂的基体材料和多个掺杂的基体材料的电流密度-电压的图;
图13是本发明的第四实施方式中的未掺杂的基体材料和多个掺杂的基体材料的电流密度-电压的图;
图14是本发明的第五实施方式中的未掺杂的基体材料和多个掺杂的基体材料的电流密度-电压的图;
图15是图14中的掺杂材料的发光-电压的图;
图16是本发明的第六实施方式中的未掺杂的基体材料和多个掺杂的基体材料的电流密度-电压的图;
图17是图16中的掺杂材料的发光-电压的图。
实施例I
实施例I涉及Bi(O2CCF3)3,其已经根据文献制备;参见Bo Li“HeterometallicCarboxylates Incorporating Bismuth”,PhD Thesis,State University of New Yorkat Albany,Chair M.Petrukhina 2007,UMI Number3277252和Vera Reiland“Chemie undKoordinationschemie von Bismuttri-fluoracetat und verwandten Verbindungen”[Chemistry and Coordination Chemistry of Bismuth Trifluoroacetate and RelatedCompounds],Thesis D368,University of Kaiserslautern 2000。
汽化
对ITO-预先构建的玻璃基板进行10分钟的氧等离子体处理,然后尽可能快地转移到汽化器中。将汽化器转移到氩气手套箱中,其中氧气和水的浓度小于2ppm。
所有的汽化都在基础压力低于2×10-6mbar的真空下进行(所述压力随后在汽化的过程中升高)。
首先,将基体材料和掺杂材料均加热到略低于汽化点,然后继续加热,直到可观察到持续的汽化。
一旦关闭快门,就将体系冷却至40℃,并且用氩气充满,更换用于阴极沉积的掩模,然后再次排空体系
图4至图7涉及Bi(O2CCF3)3-掺杂和未掺杂的HTM-014(基体材料,购自Merck KGaA公司)。在这些情况下,一方面生产了200nm厚的HTM-014(购自Merck KGaA公司)层,另一方面生产了200nm厚的掺杂有15%的Bi(O2CCF3)3的HTM-014层。
图4示出了相对于施加到两种材料的电压的电流密度。即使在掺杂层的情况下,也观察到电流密度相对于所施加的电压的增加。
为了研究本发明的掺杂材料的光学特性,测量吸收、光致发光和反射(图5至图7)。可以看出,络合物实质上是透明的,这使得它们适合用于(光)电子元件。
实施例II:
实施例II涉及Bi(O2CC6H2(2,3,4-F3))3,其制备方法如下:
在50mL的舒伦克(Schlenk)瓶中装入0.251g(0.57mmol)的三苯基铋(III),然后装入10-15mL的新蒸馏的苯,并且加入过量的(约3mmol)的2,3,4-三氟苯甲酸。将混合物加热回流1小时,然后冷却至室温;随后,在减压条件将溶剂排出,直至白色固体沉淀析出。用少量己烷洗涤粗产物(产率为85-88%)并在减压下干燥过夜。可以通过升华实现纯化。
类似于实施例I,四个层被施加,一层包含未掺杂的基体材料(HTM-014,Merck)以及掺杂有5%、13%和15%的Bi(O2CC6H2(2,3,4-F3))3的HTM-014层。每种情况的层厚度均为200nm
图8示出了相对于施加到三种材料的电压的电流密度。即使在具有5%掺杂的层的情况下,也观察到电流密度对所施加的电压的增加。
为了研究本发明的掺杂材料的光学特性,测量吸收、光致发光和反射(图9至图11)。可以看出,络合物实质上是透明的,这使得它们适合用于(光)电子元件。
实施例III:
在溶剂法的过程中,使用HIL-012(基体材料,购自Merck KGaA公司)作为聚合物空穴导体并且使用本发明的金属络合物Bi(O2C2F3)3和BipFbz作为掺杂剂,制造多数载荷子元件(majority charge carrier component)。
为产生未掺杂的空穴导体,在苯甲醚和二甲苯(溶剂的体积比为1:1)中的2重量%的HIL-012溶液通过旋涂机施加到涂有ITO的玻璃板。以1200rpm(转/分钟)的旋转速度进行涂覆40秒,并且于标准压力在120℃的温度下干燥1小时之后,获得120nm厚的HIL-012层。对于上电极,通过真空汽化法施加200nm厚的铝层。
类似地生产掺杂有本发明的金属络合物的层,不同之处在于进行了溶液与铋三(三氟乙酸)Bi(O2C2F3)3(bismuth tris(trifluoroacetate))或铋三(五苯氟甲酸)(bismuth tris(pentafluorobenzoate))(BipFbz)掺杂剂的混合。在这些实施例中的总固体含量合计为2重量%,并且掺杂剂在总固体含量中的比例为15重量%。
用于旋涂的参数是:对于Bi(O2C2F3)3用作掺杂剂的元件,总共为1500rpm,对于用BipFbz的元件总共为1000rpm,涂布40秒的时间,并且使用上述参数进行干燥后,对于两种元件来说,层厚均为100nm。在尺寸为4mm2的元件上进行各自的测量。
图12示出了在本实施例中由不同元件获得的电流密度-电压特征。可以清楚地看到掺杂导致了传导性的几个数量级的增加。
实施例IV:
在溶剂法的过程中,使用螺-TTB作为聚合的空穴导体并且使用本发明的金属络合物Bi(O2C2F3)3和BipFbz作为掺杂剂,生产多数载荷子元件。
以与实施例III类似的方式进行掺杂剂与螺-TTB空穴导体材料(“小分子”)的处理。为了生产100nm厚的层,制备了总计为3.5重量%的溶液(苯甲醚︰二甲苯溶剂混合物,比率为1:2),其含有1.6摩尔%、2摩尔%和10摩尔%的掺杂剂,基于基体材料的量。在750rpm的转速下旋涂溶液40秒,并且在120℃的温度下干燥1小时。
图13示出了在本实施例中由不同元件得到的电流密度-电压特征。与纯空穴导体材料相比,所述掺杂可以再次实现非常明显的传导性的增加。此外,发现为了实现对传导性的足够的影响,约10摩尔%的掺杂是必要的。
实施例V:
将在实施例III中描述的未掺杂和掺杂的空穴导体层合并入红色OLED中。红色OLED具有如下的层结构:玻璃/ITO/100nm HTL各不相同的/10nm NPB/20%NPB、70%TPBi、10%ADS076的20nm发射极层/60nm TPBi/0.7nm LiF/Al/200nm Al。
在图14和图15中的浓度下使用铋三(三氟乙酸)Bi(O2C2F3)3或铋三(五苯氟甲酸)(BipFbz)作为掺杂剂。已发现,通过溶剂法获得的本发明的OLED关于亮度(图15)和电流-电压特征(图14),均优于包含PEDOT-PSS的参考OLED。
实施例VI:
螺-TTB被用作空穴导体并掺杂有BipFbz,而不用实施例V中的基于HIL-012的HIL。通过溶剂法(由BipFbz识别特征)以及通过汽化方法(由BipFbz(ev)识别特征)均可以制备螺-TTB和BipFbz。在图16和图17中描绘了特征性电流密度-电压特征和亮度-电压特征。发现通过汽化方法产生的层的特性优于从溶液中沉积的那些层的特性。然而,这种差别较小。
实施例VII:
在实施例III和IV中生产的掺杂的空穴导体层也可以用作有机太阳能电池(特别是那些具有p-i-n结构的有机太阳能电池)的空穴导体层。
已经提到的构成部分和实施的特征的各个组合是说明性;所引用的公开文本同样明确地预期了这些教导被其它教导交换和替换。对于本领域的技术人员,同样可发生的变化、修改以及在此描述其它的实施将显而易见,而不背离本发明的构思以及本发明的范围。
因此,以上描述应当被认为是说明性的而不是限制性的。权利要求中使用的词语“包含”(“包括”)不排除其它成分或步骤。不定冠词“一”不排除多个。事实上,在互不相同的权利要求中被引用的特定措施并不表明这些措施的组合不能被有利地利用。本发明的范围被限定在所附的权利要求和相应的等效物中。
本发明还包括:
1.一种具有基体的有机电子元件,其中所述基体具有作为p-掺杂剂的第13-15族的主族金属络合物,其相应地包含至少一个结构如下的配体L:
其中R1和R2各自独立为氧、硫、硒、NH或NR4,其中R4是选自包括烷基和芳基的组,并且与R3键合;以及
R3选自包括以下的组:烷基、长链烷基、烷氧基、长链烷氧基、环烷基、卤代烷基、芳基、亚芳基、卤代芳基、杂芳基、亚杂芳基、杂环亚烷基、杂环烷基、卤代杂芳基、烯基、卤代烯基、炔基、卤代炔基、酮芳基、卤代酮芳基、酮杂芳基、酮烷基、卤代酮烷基、酮烯基、卤代酮烯基,其中合适的基团中的一个或多个不相邻的CH2基团独立地被-O-、-S-、-NH-、-NR°-、-SiR°R°°-、-CO-、-COO-、-OCO-、-OCO-O-、-SO2-、-S-CO-、-CO-S-、-CY1=CY2或-C≡C-所取代,以这样的方式,氧和/或硫原子彼此没有直接键合,并且同样任选地被芳基或优选含有1到30个碳原子的杂芳基所取代(从CH2–H的意义上来讲,末端的CH3基团被认为是CH2基团)。
2.如项1所述的元件,其特征在于所述金属选自包括铋、锡及其混合物的组。
3.如项1或2所述的元件,其特征在于金属络合物具有结构MLm,其中M=金属,L=配体且m=1至10,其中,当m>1时,所有L是彼此独立的。
4.如项1至3中任一项所述的元件,其特征在于R3选自包括卤代烷基、卤代芳基和卤代杂芳基的组。
5.如项1至4中任一项所述的元件,其特征在于R3选自包括以下的组:
其中Y1-Y5各自独立地选自包括C-F、C-CF3、C-NO2、C-CN、C-卤素、C-拟卤素和N的组。
6.如项1至5中任一项所述的元件,其特征在于R3选自包括以下的组:
其中Y1-Y7各自独立地选自包括C-F、C-CF3、C-NO2、C-CN、C-卤素、C-拟卤素和N的组。
7.如项1至6中任一项所述的元件,其特征在于R3选自包括以下的组:
其中Y1-Y7各自独立地选自包括C-F、C-CF3、C-NO2、C-CN、C-卤素、C-拟卤素和N的组。
8.如项1至7中任一项所述的元件,其特征在于所述金属络合物包含至少一种配体L,其选自包括未被取代的、部分氟化的和全氟化的有机羧酸的组。
9.如项1至8中任一项所述的元件,其特征在于所述金属络合物包含至少一种配体L,其选自包括未被取代的、部分氟化的和全氟化的乙酸的组。
10.一种第13-16族的主族金属络合物作为电子元件的基体材料中的p-掺杂剂的用途,其包含至少一个结构如下的配体L:
其中R1和R2各自独立为氧、硫、硒、NH或NR4,其中R4选自包括烷基和芳基的组,并且与R3键合;以及
R3选自包括以下的组:烷基、长链烷基、烷氧基、长链烷氧基、环烷基、卤代烷基、芳基、亚芳基、卤代芳基、杂芳基、亚杂芳基、杂环亚烷基、杂环烷基、卤代杂芳基、烯基、卤代烯基、炔基、卤代炔基、酮芳基、卤代酮芳基、酮杂芳基、酮烷基、卤代酮烷基、酮烯基、卤代酮烯基,其中合适的基团中的一个或多个不相邻的CH2基团独立地被-O-、-S-、-NH-、-NR°-、-SiR°R°°-、-CO-、-COO-、-OCO-、-OCO-O-、-SO2-、-S-CO-、-CO-S-、-CY1=CY2或-C≡C-所取代,以这样的方式,氧和/或硫原子彼此没有直接键合,并且同样任选地被芳基或优选含有1到30个碳原子的杂芳基所取代(从CH2–H的意义上来讲,末端的CH3基团被认为是CH2基团)。
Claims (9)
2.根据权利要求1的有机电子元件,其中所述金属络合物的金属为铋。
3.根据权利要求1或2的有机电子元件,其中所述金属络合物的配体选自包括如下的组:2-(三氟甲基)苯甲酸、3,5-二氟苯甲酸、3-氟-4-甲基苯甲酸、3-(三氟甲氧基)苯甲酸、4-(三氟甲氧基)-苯甲酸、4-氯-2,5-二氟苯甲酸、2-氯-4,5-二氟苯甲酸、2,4,5-三氟苯甲酸、2-氟苯甲酸、4-氟苯甲酸、2,3,4-三氟苯甲酸、2,3,5-三氟苯甲酸、2,3-二氟苯甲酸、2,4-双(三氟甲基)苯甲酸、2,4-二氟苯甲酸、2,5-二氟苯甲酸、2,6-双(三氟甲基)苯甲酸、2,6-二氟苯甲酸、2-氯-6-氟苯甲酸、2-氟-4-(三氟甲基)-苯甲酸、2-氟-5-(三氟甲基)苯甲酸、2-氟-6-(三氟甲基)苯甲酸、3,4,5-三氟苯甲酸、3,4-二氟苯甲酸、3,5-双(三氟甲基)苯甲酸、3-(三氟甲基)苯甲酸、3-氯-4-氟苯甲酸、3-氟-5-(三氟甲基)苯甲酸、3-氟苯甲酸、4-氟-2-(三氟甲基)苯甲酸、4-氟-3-(三氟甲基)苯甲酸、5-氟-2-甲基苯甲酸、2-(三氟甲氧基)苯甲酸、4-(三氟甲基)苯甲酸、五氟苯甲酸、2,3,4,5-四氟苯甲酸。
4.根据权利要求1或2的有机电子元件,其中所述金属络合物的配体选自包括如下的组:3,5-双(三氟甲基)苯甲酸、3-(三氟甲基)苯甲酸、3,5-二氟苯甲酸和五氟苯甲酸。
5.根据权利要求1或2的有机电子元件,其中所述配体选自包括如下的组:3,5-双(三氟甲基)苯甲酸和3-(三氟甲基)苯甲酸。
6.根据权利要求1或2的有机电子元件,其中所述金属络合物为单核或多核金属络合物。
7.根据权利要求1或2的有机电子元件,其中所述金属络合物满足结构ML3,其中M代表所述金属,和L代表所述配体。
8.根据权利要求1或2的有机电子元件,其中所述金属络合物满足结构ML3,其中M代表所述金属,和L代表所述配体,并且所述配体选自包括如下的组:3,5-双(三氟甲基)苯甲酸和3-(三氟甲基)苯甲酸。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012209523A DE102012209523A1 (de) | 2012-06-06 | 2012-06-06 | Hauptgruppenmetallkomplexe als p-Dotanden für organische elektronische Matrixmaterialien |
DE102012209523.3 | 2012-06-06 | ||
CN201380037752.9A CN104685647B (zh) | 2012-06-06 | 2013-05-14 | 用作有机电子基体材料的p‑掺杂剂的主族金属络合物 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380037752.9A Division CN104685647B (zh) | 2012-06-06 | 2013-05-14 | 用作有机电子基体材料的p‑掺杂剂的主族金属络合物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107681052A CN107681052A (zh) | 2018-02-09 |
CN107681052B true CN107681052B (zh) | 2020-03-24 |
Family
ID=48463971
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710695698.7A Active CN107681052B (zh) | 2012-06-06 | 2013-05-14 | 用作有机电子基体材料的p-掺杂剂的主族金属络合物 |
CN201380037752.9A Active CN104685647B (zh) | 2012-06-06 | 2013-05-14 | 用作有机电子基体材料的p‑掺杂剂的主族金属络合物 |
CN201611116063.9A Active CN106967122B (zh) | 2012-06-06 | 2013-05-14 | 用作有机电子基体材料的p掺杂剂的主族金属络合物 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380037752.9A Active CN104685647B (zh) | 2012-06-06 | 2013-05-14 | 用作有机电子基体材料的p‑掺杂剂的主族金属络合物 |
CN201611116063.9A Active CN106967122B (zh) | 2012-06-06 | 2013-05-14 | 用作有机电子基体材料的p掺杂剂的主族金属络合物 |
Country Status (9)
Country | Link |
---|---|
US (2) | US10411197B2 (zh) |
EP (3) | EP2845239B1 (zh) |
JP (2) | JP6091606B2 (zh) |
KR (2) | KR101736560B1 (zh) |
CN (3) | CN107681052B (zh) |
DE (1) | DE102012209523A1 (zh) |
ES (1) | ES2667521T3 (zh) |
HK (2) | HK1211136A1 (zh) |
WO (1) | WO2013182389A2 (zh) |
Families Citing this family (128)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DK3219705T3 (da) | 2005-12-28 | 2020-04-14 | Vertex Pharma | Farmaceutiske sammensætninger af den amorfe form af n-[2,4-bis(1,1-dimethylethyl)-5-hydroxyphenyl]-1,4-dihydro-4-oxoquinolin-3-carboxamid |
DE102012209523A1 (de) | 2012-06-06 | 2013-12-12 | Osram Opto Semiconductors Gmbh | Hauptgruppenmetallkomplexe als p-Dotanden für organische elektronische Matrixmaterialien |
DE102012209520A1 (de) * | 2012-06-06 | 2013-12-12 | Osram Opto Semiconductors Gmbh | Metallkomplexe als p-Dotanden für organische elektronische Matrixmaterialien |
DE102012211869A1 (de) | 2012-07-06 | 2014-01-09 | Osram Opto Semiconductors Gmbh | Organisches Licht emittierendes Bauelement |
WO2014047616A1 (en) | 2012-09-24 | 2014-03-27 | Arizona Board Of Regents For And On Behalf Of Arizona State University | Metal compounds, methods, and uses thereof |
WO2014109814A2 (en) | 2012-10-26 | 2014-07-17 | Arizona Board Of Regents Acting For And On Behalf Of Arizona State University | Metal complexes, methods, and uses thereof |
DE102013106949A1 (de) * | 2013-07-02 | 2015-01-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, organische funktionelle Schicht und Verfahren zur Herstellung eines optoelektronischen Bauelements |
JP6804823B2 (ja) | 2013-10-14 | 2020-12-23 | アリゾナ・ボード・オブ・リージェンツ・オン・ビハーフ・オブ・アリゾナ・ステイト・ユニバーシティーArizona Board of Regents on behalf of Arizona State University | 白金錯体およびデバイス |
US10020455B2 (en) | 2014-01-07 | 2018-07-10 | Arizona Board Of Regents On Behalf Of Arizona State University | Tetradentate platinum and palladium complex emitters containing phenyl-pyrazole and its analogues |
US9941479B2 (en) | 2014-06-02 | 2018-04-10 | Arizona Board Of Regents On Behalf Of Arizona State University | Tetradentate cyclometalated platinum complexes containing 9,10-dihydroacridine and its analogues |
DE102014210412A1 (de) | 2014-06-03 | 2015-12-03 | Siemens Aktiengesellschaft | p-Dotierende Vernetzung organischer Lochleiter |
EP2960315A1 (de) | 2014-06-27 | 2015-12-30 | cynora GmbH | Organische Elektrolumineszenzvorrichtung |
US9923155B2 (en) | 2014-07-24 | 2018-03-20 | Arizona Board Of Regents On Behalf Of Arizona State University | Tetradentate platinum (II) complexes cyclometalated with functionalized phenyl carbene ligands and their analogues |
WO2016025921A1 (en) | 2014-08-15 | 2016-02-18 | Arizona Board Of Regents On Behalf Of Arizona State University | Non-platinum metal complexes for excimer based single dopant white organic light emitting diodes |
WO2016029137A1 (en) | 2014-08-22 | 2016-02-25 | Arizona Board Of Regents On Behalf Of Arizona State University | Organic light-emitting diodes with fluorescent and phosphorescent emitters |
KR102251715B1 (ko) | 2014-09-17 | 2021-05-12 | 시노라 게엠베하 | 이미터로서 사용하기 위한 유기 분자 |
DE102014114224A1 (de) | 2014-09-30 | 2016-03-31 | Osram Oled Gmbh | Organisches elektronisches Bauteil, Verwendung eines Zinkkomplexes als p-Dotierungsmittel für organische elektronische Matrixmaterialien |
DE202014106226U1 (de) * | 2014-09-30 | 2015-10-28 | Osram Oled Gmbh | Organisches elektronisches Bauteil |
JP6746569B2 (ja) | 2014-10-07 | 2020-08-26 | バーテックス ファーマシューティカルズ インコーポレイテッドVertex Pharmaceuticals Incorporated | 嚢胞性線維症膜貫通コンダクタンス制御因子のモジュレーターの共結晶 |
EP3210248B2 (de) | 2014-10-24 | 2024-04-10 | Merck Patent GmbH | Materialien für elektronische vorrichtungen |
JP6657237B2 (ja) * | 2014-10-24 | 2020-03-04 | メルク パテント ゲーエムベーハー | 電子素子のための材料 |
US10033003B2 (en) | 2014-11-10 | 2018-07-24 | Arizona Board Of Regents On Behalf Of Arizona State University | Tetradentate metal complexes with carbon group bridging ligands |
WO2016107667A1 (de) * | 2014-12-30 | 2016-07-07 | Merck Patent Gmbh | Zusammensetzungen umfassend mindestens ein polymer und mindestens einen metallkomplex sowie elektrolumineszenzvorrichtungen enthaltend diese zusammensetzungen |
DE102015200690A1 (de) | 2015-01-19 | 2016-07-21 | Siemens Aktiengesellschaft | Proazaphosphatrane als n-Dotierstoffe in der organischen Elektronik |
CN107580601B (zh) * | 2015-05-13 | 2021-04-13 | 默克专利有限公司 | 金属络合物和包含这些金属络合物的电致发光器件 |
WO2016188609A1 (en) * | 2015-05-22 | 2016-12-01 | Merck Patent Gmbh | Formulation containing an organic semiconductor and a metal complex |
US9879039B2 (en) | 2015-06-03 | 2018-01-30 | Arizona Board Of Regents On Behalf Of Arizona State University | Tetradentate and octahedral metal complexes containing naphthyridinocarbazole and its analogues |
CN114805091A (zh) | 2015-07-22 | 2022-07-29 | 默克专利有限公司 | 用于有机电致发光器件的材料 |
EP3328825B1 (en) | 2015-07-29 | 2023-06-28 | Merck Patent GmbH | Materials for organic electroluminescent devices |
US10211411B2 (en) | 2015-08-25 | 2019-02-19 | Arizona Board Of Regents On Behalf Of Arizona State University | Thermally activated delayed fluorescent material based on 9,10-dihydro-9,9-dimethylacridine analogues for prolonging device longevity |
DE102015119778A1 (de) | 2015-11-16 | 2017-05-18 | Osram Oled Gmbh | Organisches elektronisches Bauelement, Verwendung eines p-Dotierstoffs für ein Matrixmaterial |
DE102015121844A1 (de) | 2015-12-15 | 2017-06-22 | Osram Oled Gmbh | Organisches elektronisches Bauelement und Verwendung eines fluorierten Sulfonimid-Metallsalzes |
DE102016101710A1 (de) | 2016-02-01 | 2017-08-03 | Osram Oled Gmbh | OLED und Verfahren zur Herstellung einer OLED |
KR20180111905A (ko) | 2016-02-05 | 2018-10-11 | 메르크 파텐트 게엠베하 | 전자 소자용 재료 |
US11335865B2 (en) | 2016-04-15 | 2022-05-17 | Arizona Board Of Regents On Behalf Of Arizona State University | OLED with multi-emissive material layer |
CN116283863A (zh) | 2016-06-03 | 2023-06-23 | 默克专利有限公司 | 用于有机电致发光器件的材料 |
DE102016111062A1 (de) | 2016-06-16 | 2017-12-21 | Merck Patent Gmbh | Vernetzende p-Dotanden zur p-Dotierung organischer Lochleiter |
KR102078435B1 (ko) * | 2016-07-14 | 2020-02-17 | 주식회사 엘지화학 | 유기 전계 발광 소자 및 이의 제조 방법 |
CN109790105B (zh) | 2016-10-06 | 2023-04-18 | 默克专利有限公司 | 用于有机电致发光器件的材料 |
TWI764942B (zh) | 2016-10-10 | 2022-05-21 | 德商麥克專利有限公司 | 電子裝置 |
KR20210083134A (ko) | 2016-10-12 | 2021-07-06 | 아리조나 보드 오브 리젠츠 온 비하프 오브 아리조나 스테이트 유니버시티 | 협대역 적색 인광성 4좌 백금(ii) 착물 |
DE102017008794A1 (de) | 2016-10-17 | 2018-04-19 | Merck Patent Gmbh | Materialien zur Verwendung in elektronischen Vorrichtungen |
US11302870B2 (en) | 2016-11-02 | 2022-04-12 | Merck Patent Gmbh | Materials for electronic devices |
KR20230121632A (ko) | 2016-11-08 | 2023-08-18 | 메르크 파텐트 게엠베하 | 전자 소자용 화합물 |
US11183670B2 (en) | 2016-12-16 | 2021-11-23 | Arizona Board Of Regents On Behalf Of Arizona State University | Organic light emitting diode with split emissive layer |
KR102678967B1 (ko) | 2017-01-27 | 2024-06-26 | 아리조나 보드 오브 리젠츠 온 비하프 오브 아리조나 스테이트 유니버시티 | 피리도-피롤로-아크리딘 및 유사체를 사용하는 금속 보조 지연 형광 이미터 |
KR102683465B1 (ko) | 2017-02-02 | 2024-07-09 | 메르크 파텐트 게엠베하 | 전자 디바이스용 재료 |
US11539014B2 (en) * | 2017-02-20 | 2022-12-27 | Novaled Gmbh | Electronic semiconducting device, method for preparing the electronic semiconducting device and compound |
CN117440703A (zh) | 2017-03-01 | 2024-01-23 | 默克专利有限公司 | 有机电致发光器件 |
KR102557516B1 (ko) | 2017-03-02 | 2023-07-20 | 메르크 파텐트 게엠베하 | 유기 전자 디바이스용 재료 |
US11101435B2 (en) | 2017-05-19 | 2021-08-24 | Arizona Board Of Regents On Behalf Of Arizona State University | Tetradentate platinum and palladium complexes based on biscarbazole and analogues |
US10516117B2 (en) | 2017-05-19 | 2019-12-24 | Arizona Board Of Regents On Behalf Of Arizona State University | Metal-assisted delayed fluorescent emttters employing benzo-imidazo-phenanthridine and analogues |
DE102017111425A1 (de) | 2017-05-24 | 2018-11-29 | Osram Oled Gmbh | Organisches elektronisches Bauelement und Verfahren zur Herstellung eines organischen elektronischen Bauelements |
CN110753685A (zh) | 2017-06-23 | 2020-02-04 | 默克专利有限公司 | 用于有机电致发光器件的材料 |
US12098157B2 (en) | 2017-06-23 | 2024-09-24 | Universal Display Corporation | Organic electroluminescent materials and devices |
WO2019002190A1 (en) | 2017-06-28 | 2019-01-03 | Merck Patent Gmbh | MATERIALS FOR ELECTRONIC DEVICES |
US11228010B2 (en) | 2017-07-26 | 2022-01-18 | Universal Display Corporation | Organic electroluminescent materials and devices |
CN110914244A (zh) | 2017-07-28 | 2020-03-24 | 默克专利有限公司 | 用于电子器件中的螺二芴衍生物 |
US11744142B2 (en) | 2017-08-10 | 2023-08-29 | Universal Display Corporation | Organic electroluminescent materials and devices |
JP7250773B2 (ja) | 2017-09-08 | 2023-04-03 | メルク パテント ゲーエムベーハー | 電子デバイス用材料 |
US11594688B2 (en) | 2017-10-17 | 2023-02-28 | Arizona Board Of Regents On Behalf Of Arizona State University | Display and lighting devices comprising phosphorescent excimers with preferred molecular orientation as monochromatic emitters |
US11647643B2 (en) | 2017-10-17 | 2023-05-09 | Arizona Board Of Regents On Behalf Of Arizona State University | Hole-blocking materials for organic light emitting diodes |
KR20200090817A (ko) | 2017-11-23 | 2020-07-29 | 메르크 파텐트 게엠베하 | 전자 디바이스용 재료 |
US20190161504A1 (en) | 2017-11-28 | 2019-05-30 | University Of Southern California | Carbene compounds and organic electroluminescent devices |
US11937503B2 (en) | 2017-11-30 | 2024-03-19 | Universal Display Corporation | Organic electroluminescent materials and devices |
KR20240025066A (ko) | 2017-12-15 | 2024-02-26 | 메르크 파텐트 게엠베하 | 유기 전계 발광 디바이스용 치환된 방향족 아민 |
JP7402800B2 (ja) | 2017-12-20 | 2023-12-21 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | ヘテロ芳香族化合物 |
US11542289B2 (en) | 2018-01-26 | 2023-01-03 | Universal Display Corporation | Organic electroluminescent materials and devices |
US12037348B2 (en) | 2018-03-09 | 2024-07-16 | Arizona Board Of Regents On Behalf Of Arizona State University | Blue and narrow band green and red emitting metal complexes |
US20210020843A1 (en) | 2018-03-16 | 2021-01-21 | Merck Patent Gmbh | Materials for organic electroluminescent devices |
US11716900B2 (en) | 2018-05-30 | 2023-08-01 | Universal Display Corporation | Host materials for electroluminescent devices |
US20200075870A1 (en) | 2018-08-22 | 2020-03-05 | Universal Display Corporation | Organic electroluminescent materials and devices |
US11737349B2 (en) | 2018-12-12 | 2023-08-22 | Universal Display Corporation | Organic electroluminescent materials and devices |
US11878988B2 (en) | 2019-01-24 | 2024-01-23 | Arizona Board Of Regents On Behalf Of Arizona State University | Blue phosphorescent emitters employing functionalized imidazophenthridine and analogues |
US11594691B2 (en) | 2019-01-25 | 2023-02-28 | Arizona Board Of Regents On Behalf Of Arizona State University | Light outcoupling efficiency of phosphorescent OLEDs by mixing horizontally aligned fluorescent emitters |
US11780829B2 (en) | 2019-01-30 | 2023-10-10 | The University Of Southern California | Organic electroluminescent materials and devices |
US20200251664A1 (en) | 2019-02-01 | 2020-08-06 | Universal Display Corporation | Organic electroluminescent materials and devices |
JP2020158491A (ja) | 2019-03-26 | 2020-10-01 | ユニバーサル ディスプレイ コーポレイション | 有機エレクトロルミネセンス材料及びデバイス |
US20210032278A1 (en) | 2019-07-30 | 2021-02-04 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20210047354A1 (en) | 2019-08-16 | 2021-02-18 | Universal Display Corporation | Organic electroluminescent materials and devices |
US11785838B2 (en) | 2019-10-02 | 2023-10-10 | Arizona Board Of Regents On Behalf Of Arizona State University | Green and red organic light-emitting diodes employing excimer emitters |
US20210135130A1 (en) | 2019-11-04 | 2021-05-06 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20210217969A1 (en) | 2020-01-06 | 2021-07-15 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220336759A1 (en) | 2020-01-28 | 2022-10-20 | Universal Display Corporation | Organic electroluminescent materials and devices |
US11945985B2 (en) | 2020-05-19 | 2024-04-02 | Arizona Board Of Regents On Behalf Of Arizona State University | Metal assisted delayed fluorescent emitters for organic light-emitting diodes |
EP3937268A1 (en) | 2020-07-10 | 2022-01-12 | Universal Display Corporation | Plasmonic oleds and vertical dipole emitters |
US20220112232A1 (en) | 2020-10-02 | 2022-04-14 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220158096A1 (en) | 2020-11-16 | 2022-05-19 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220162243A1 (en) | 2020-11-24 | 2022-05-26 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220165967A1 (en) | 2020-11-24 | 2022-05-26 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220271241A1 (en) | 2021-02-03 | 2022-08-25 | Universal Display Corporation | Organic electroluminescent materials and devices |
EP4060758A3 (en) | 2021-02-26 | 2023-03-29 | Universal Display Corporation | Organic electroluminescent materials and devices |
EP4059915A3 (en) | 2021-02-26 | 2022-12-28 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220298192A1 (en) | 2021-03-05 | 2022-09-22 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220298190A1 (en) | 2021-03-12 | 2022-09-22 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220298193A1 (en) | 2021-03-15 | 2022-09-22 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220340607A1 (en) | 2021-04-05 | 2022-10-27 | Universal Display Corporation | Organic electroluminescent materials and devices |
EP4075531A1 (en) | 2021-04-13 | 2022-10-19 | Universal Display Corporation | Plasmonic oleds and vertical dipole emitters |
US20220352478A1 (en) | 2021-04-14 | 2022-11-03 | Universal Display Corporation | Organic eletroluminescent materials and devices |
US20230006149A1 (en) | 2021-04-23 | 2023-01-05 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20220407020A1 (en) | 2021-04-23 | 2022-12-22 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20230133787A1 (en) | 2021-06-08 | 2023-05-04 | University Of Southern California | Molecular Alignment of Homoleptic Iridium Phosphors |
EP4151699A1 (en) | 2021-09-17 | 2023-03-22 | Universal Display Corporation | Organic electroluminescent materials and devices |
EP4410071A1 (de) | 2021-09-28 | 2024-08-07 | Merck Patent GmbH | Materialien für elektronische vorrichtungen |
KR20240075872A (ko) | 2021-09-28 | 2024-05-29 | 메르크 파텐트 게엠베하 | 전자 디바이스용 재료 |
EP4410074A1 (de) | 2021-09-28 | 2024-08-07 | Merck Patent GmbH | Materialien für elektronische vorrichtungen |
WO2023052314A1 (de) | 2021-09-28 | 2023-04-06 | Merck Patent Gmbh | Materialien für elektronische vorrichtungen |
WO2023094412A1 (de) | 2021-11-25 | 2023-06-01 | Merck Patent Gmbh | Materialien für elektronische vorrichtungen |
US20240343970A1 (en) | 2021-12-16 | 2024-10-17 | Universal Display Corporation | Organic electroluminescent materials and devices |
KR20240128020A (ko) | 2021-12-21 | 2024-08-23 | 메르크 파텐트 게엠베하 | 중수소화 유기 화합물의 제조 방법 |
CN118647604A (zh) | 2022-02-14 | 2024-09-13 | 默克专利有限公司 | 用于电子器件的材料 |
EP4231804A3 (en) | 2022-02-16 | 2023-09-20 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20230292592A1 (en) | 2022-03-09 | 2023-09-14 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20230337516A1 (en) | 2022-04-18 | 2023-10-19 | Universal Display Corporation | Organic electroluminescent materials and devices |
WO2023222559A1 (de) | 2022-05-18 | 2023-11-23 | Merck Patent Gmbh | Verfahren zur herstellung von deuterierten organischen verbindungen |
US20230389421A1 (en) | 2022-05-24 | 2023-11-30 | Universal Display Corporation | Organic electroluminescent materials and devices |
EP4293001A1 (en) | 2022-06-08 | 2023-12-20 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20240016051A1 (en) | 2022-06-28 | 2024-01-11 | Universal Display Corporation | Organic electroluminescent materials and devices |
WO2024013004A1 (de) | 2022-07-11 | 2024-01-18 | Merck Patent Gmbh | Materialien für elektronische vorrichtungen |
US20240107880A1 (en) | 2022-08-17 | 2024-03-28 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20240188319A1 (en) | 2022-10-27 | 2024-06-06 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20240180025A1 (en) | 2022-10-27 | 2024-05-30 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20240188419A1 (en) | 2022-10-27 | 2024-06-06 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20240196730A1 (en) | 2022-10-27 | 2024-06-13 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20240188316A1 (en) | 2022-10-27 | 2024-06-06 | Universal Display Corporation | Organic electroluminescent materials and devices |
US20240247017A1 (en) | 2022-12-14 | 2024-07-25 | Universal Display Corporation | Organic electroluminescent materials and devices |
WO2024133366A1 (en) | 2022-12-23 | 2024-06-27 | Merck Patent Gmbh | Electronic device |
WO2024170605A1 (en) | 2023-02-17 | 2024-08-22 | Merck Patent Gmbh | Materials for organic electroluminescent devices |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622355A (en) | 1984-07-16 | 1986-11-11 | The United States Of America As Represented By The United States Department Of Energy | Radiation-hardened polymeric films |
JP2998268B2 (ja) | 1991-04-19 | 2000-01-11 | 三菱化学株式会社 | 有機電界発光素子 |
JPH0585060A (ja) * | 1991-09-30 | 1993-04-06 | Asahi Denka Kogyo Kk | 感熱記録材料 |
JPH0596860A (ja) | 1991-10-11 | 1993-04-20 | Toyo Ink Mfg Co Ltd | Cdまたはcd−rom対応の追記型光デイスク |
JP2998708B2 (ja) * | 1997-07-11 | 2000-01-11 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子 |
JPH11251067A (ja) | 1998-03-02 | 1999-09-17 | Junji Kido | 有機エレクトロルミネッセント素子 |
KR20010050711A (ko) | 1999-09-29 | 2001-06-15 | 준지 키도 | 유기전계발광소자, 유기전계발광소자그룹 및 이런소자들의 발광스펙트럼의 제어방법 |
JP2002008741A (ja) * | 2000-06-23 | 2002-01-11 | Fuji Photo Film Co Ltd | 光電変換素子および光電池 |
JP4211211B2 (ja) * | 2000-09-29 | 2009-01-21 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンス素子用金属錯体の形成方法 |
TW545080B (en) | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
US6891330B2 (en) | 2002-03-29 | 2005-05-10 | General Electric Company | Mechanically flexible organic electroluminescent device with directional light emission |
AU2002323418A1 (en) * | 2002-04-08 | 2003-10-27 | The University Of Southern California | Doped organic carrier transport materials |
DE10350722A1 (de) * | 2003-10-30 | 2005-05-25 | Covion Organic Semiconductors Gmbh | Metallkomplexe |
DE10360681A1 (de) * | 2003-12-19 | 2005-07-14 | Basf Ag | Verwendung von Hauptgruppenmetall-Diketonatokomplexen als lumineszierende Materialien in organischen Leuchtdioden (OLEDs) |
DE102004010954A1 (de) | 2004-03-03 | 2005-10-06 | Novaled Gmbh | Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil |
JP4915544B2 (ja) | 2005-05-11 | 2012-04-11 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子 |
US7632703B2 (en) | 2005-12-22 | 2009-12-15 | Xerox Corporation | Organic thin-film transistors |
DE102007028237A1 (de) | 2007-06-20 | 2008-12-24 | Osram Opto Semiconductors Gmbh | Verwendung eines Metallkomplexes als p-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil |
DE102007028238A1 (de) * | 2007-06-20 | 2008-12-24 | Osram Opto Semiconductors Gmbh | Verwendung eines Metallkomplexes als p-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und organische Leuchtdiode |
DE102007028236A1 (de) | 2007-06-20 | 2009-01-02 | Siemens Ag | Halbleitendes Material und organische Gleichrichterdiode |
CN102017216B (zh) * | 2008-04-28 | 2013-03-27 | 大日本印刷株式会社 | 具有空穴注入传输层的器件及其制造方法、以及用于形成空穴注入传输层的墨液 |
GB0814954D0 (en) * | 2008-08-18 | 2008-09-24 | Oled T Ltd | Compounds having electron transport properties and their preparation and use |
US7804130B1 (en) * | 2008-08-26 | 2010-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned V-channel MOSFET |
CN102227439B (zh) | 2008-10-02 | 2015-08-19 | 巴斯夫欧洲公司 | 络盐 |
CN102576802B (zh) | 2009-09-18 | 2015-08-05 | 欧司朗光电半导体有限公司 | 有机电子器件和用于掺杂有机半导体基质材料的掺杂剂 |
DE102010013495A1 (de) * | 2010-03-31 | 2011-10-06 | Siemens Aktiengesellschaft | Dotierstoff für eine Lochleiterschicht für organische Halbleiterbauelemente und Verwendung dazu |
DE102010027316A1 (de) | 2010-07-16 | 2012-01-19 | Merck Patent Gmbh | Metallkomplexe |
DE102010041331A1 (de) * | 2010-09-24 | 2012-03-29 | Siemens Aktiengesellschaft | Ladungsträgermodulation zur Farb- und Helligkeitsabstimmung in organischen Leuchtdioden |
DE102012209520A1 (de) * | 2012-06-06 | 2013-12-12 | Osram Opto Semiconductors Gmbh | Metallkomplexe als p-Dotanden für organische elektronische Matrixmaterialien |
DE102012209523A1 (de) | 2012-06-06 | 2013-12-12 | Osram Opto Semiconductors Gmbh | Hauptgruppenmetallkomplexe als p-Dotanden für organische elektronische Matrixmaterialien |
-
2012
- 2012-06-06 DE DE102012209523A patent/DE102012209523A1/de not_active Ceased
-
2013
- 2013-05-14 EP EP13723470.4A patent/EP2845239B1/de active Active
- 2013-05-14 ES ES16163380.5T patent/ES2667521T3/es active Active
- 2013-05-14 WO PCT/EP2013/059911 patent/WO2013182389A2/de active Application Filing
- 2013-05-14 EP EP16163380.5A patent/EP3057151B1/de active Active
- 2013-05-14 CN CN201710695698.7A patent/CN107681052B/zh active Active
- 2013-05-14 EP EP17173800.8A patent/EP3246960B1/de active Active
- 2013-05-14 CN CN201380037752.9A patent/CN104685647B/zh active Active
- 2013-05-14 CN CN201611116063.9A patent/CN106967122B/zh active Active
- 2013-05-14 US US14/406,041 patent/US10411197B2/en active Active
- 2013-05-14 KR KR1020147033972A patent/KR101736560B1/ko active IP Right Grant
- 2013-05-14 JP JP2015515450A patent/JP6091606B2/ja active Active
- 2013-05-14 KR KR1020167032995A patent/KR101793136B1/ko active IP Right Grant
-
2015
- 2015-12-01 HK HK15111791.1A patent/HK1211136A1/zh unknown
-
2016
- 2016-11-16 JP JP2016223223A patent/JP6284607B2/ja active Active
- 2016-12-19 US US15/383,579 patent/US10305047B2/en active Active
-
2018
- 2018-05-09 HK HK18105992.7A patent/HK1246968B/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20150027075A (ko) | 2015-03-11 |
CN107681052A (zh) | 2018-02-09 |
US10411197B2 (en) | 2019-09-10 |
US20170098787A1 (en) | 2017-04-06 |
JP2015526882A (ja) | 2015-09-10 |
JP2017075156A (ja) | 2017-04-20 |
CN104685647B (zh) | 2017-09-08 |
KR101793136B1 (ko) | 2017-11-03 |
US20150123047A1 (en) | 2015-05-07 |
WO2013182389A2 (de) | 2013-12-12 |
ES2667521T3 (es) | 2018-05-11 |
EP3057151A1 (de) | 2016-08-17 |
CN104685647A (zh) | 2015-06-03 |
JP6091606B2 (ja) | 2017-03-08 |
EP2845239A2 (de) | 2015-03-11 |
EP2845239B1 (de) | 2016-05-25 |
DE102012209523A1 (de) | 2013-12-12 |
KR101736560B1 (ko) | 2017-05-16 |
EP3246960A1 (de) | 2017-11-22 |
KR20160138588A (ko) | 2016-12-05 |
US10305047B2 (en) | 2019-05-28 |
HK1246968B (zh) | 2019-09-06 |
HK1211136A1 (zh) | 2016-05-13 |
CN106967122A (zh) | 2017-07-21 |
EP3246960B1 (de) | 2018-10-24 |
WO2013182389A3 (de) | 2014-01-30 |
JP6284607B2 (ja) | 2018-02-28 |
EP3057151B1 (de) | 2018-01-31 |
CN106967122B (zh) | 2019-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107681052B (zh) | 用作有机电子基体材料的p-掺杂剂的主族金属络合物 | |
JP6539318B2 (ja) | 有機電子マトリクス材料のためのp−型ドーパントとしての金属錯体 | |
KR20120091133A (ko) | 유기 전자 장치 및 그 제조 방법 | |
US10256422B2 (en) | Organic electronic component, use of a zinc complex as a p-dopant for organic electronic matrix materials | |
US20180277778A1 (en) | Organic electronic component having a charge carrier generation layer and the use of a zinc complex as a p-type dopant in charge carrier generation layers | |
Shahroosvand et al. | Red–yellow electroluminescence, yellow–green photoluminescence of novel N, O donor ligands–chelated zirconium (IV) complexes | |
Liu et al. | Enhanced Performance and High Resistance to Efficiency Degradation of Blue Quantum-Dot Light-Emitting Diodes Using the Lewis Base Blended Hole-Transporting Layers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201211 Address after: Dresden Patentee after: NOVALED GmbH Address before: Munich, Germany Patentee before: SIEMENS AG Patentee before: OSRAM OLED GmbH |
|
TR01 | Transfer of patent right |