WO2012049934A1 - 流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法 - Google Patents
流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法 Download PDFInfo
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- WO2012049934A1 WO2012049934A1 PCT/JP2011/070900 JP2011070900W WO2012049934A1 WO 2012049934 A1 WO2012049934 A1 WO 2012049934A1 JP 2011070900 W JP2011070900 W JP 2011070900W WO 2012049934 A1 WO2012049934 A1 WO 2012049934A1
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- semiconductor chip
- flow rate
- resin
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- detection unit
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/696—Circuits therefor, e.g. constant-current flow meters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
- G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
- G01F1/36—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction
- G01F1/38—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction the pressure or differential pressure being measured by means of a movable element, e.g. diaphragm, piston, Bourdon tube or flexible capsule
- G01F1/383—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction the pressure or differential pressure being measured by means of a movable element, e.g. diaphragm, piston, Bourdon tube or flexible capsule with electrical or electro-mechanical indication
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
- G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
- G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
- G01F1/692—Thin-film arrangements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/696—Circuits therefor, e.g. constant-current flow meters
- G01F1/698—Feedback or rebalancing circuits, e.g. self heated constant temperature flowmeters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F5/00—Measuring a proportion of the volume flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Definitions
- the present invention relates to a flow sensor and a manufacturing technique thereof, and a flow sensor module and a manufacturing technique thereof, and particularly relates to a technique effective when applied to a package structure of a flow sensor and a flow sensor module.
- Patent Document 1 discloses a flow rate sensor in which a semiconductor chip is mounted on a support member, and the semiconductor chip and an external connection terminal arranged outside the support member are connected by a wire. The structure of is described. At this time, it is disclosed that the wire connecting the semiconductor chip and the external connection terminal is sealed with resin.
- Patent Document 2 discloses a first semiconductor chip in which a flow rate detection unit of a flow rate sensor is formed on a support member and a second semiconductor in which a control circuit unit for controlling the flow rate detection unit is formed. A configuration for mounting a chip is described. The first semiconductor chip and the second semiconductor chip are connected by a wire, and the second semiconductor chip and the wire are covered with a resin. On the other hand, the surface of the first semiconductor chip on which the flow rate detection unit is formed is exposed, and resin is formed so as to cover the side surface of the first semiconductor chip. At this time, the height of the resin formed so as to cover the side surface of the first semiconductor chip and the exposed surface of the first semiconductor chip are flush with each other.
- Patent Document 3 also has a semiconductor chip mounted on a support member, as in Patent Document 1, and this semiconductor chip and an external connection terminal arranged outside the support member are wired. The structure of the flow sensor connected with is described. At this time, it is disclosed that the wire connecting the semiconductor chip and the external connection terminal is sealed with resin.
- Patent Document 6 a method of manufacturing a semiconductor package, to clamp the parts by installing a release film sheet mold, a method of pouring the resin is disclosed.
- an internal combustion engine such as an automobile is provided with an electronically controlled fuel injection device.
- This electronically controlled fuel injection device has the role of operating the internal combustion engine efficiently by appropriately adjusting the amount of gas (air) and fuel flowing into the internal combustion engine. For this reason, in the electronically controlled fuel injection device, it is necessary to accurately grasp the gas (air) flowing into the internal combustion engine. For this reason, the electronic control fuel injection device is provided with a flow rate sensor (air flow sensor) for measuring the flow rate of gas (air).
- the fixing of the gold wire (wire) with the potting resin is not performed in a state in which the first semiconductor chip is fixed with a mold or the like. Therefore, the contraction of the potting resin causes the first semiconductor chip to deviate from the mounting position. There's a problem. Furthermore, since the potting resin is formed by dropping, there is a problem that the dimensional accuracy of the potting resin is low. As a result, the mounting position of the first semiconductor chip on which the flow rate detection unit is formed varies for each individual flow sensor, and the formation position of the potting resin is slightly different. Variations will occur.
- the flow rate sensor includes a pair of air flow control units having a long shape in a direction parallel to a traveling direction of the gas flowing on the flow rate detection unit with the exposed flow rate detection unit interposed therebetween. It is characterized by being formed integrally with.
- the flow sensor includes (a) a chip mounting portion for mounting a semiconductor chip on which a plurality of pads are formed, and (b) a plurality of leads disposed outside the chip mounting portion. (C) the semiconductor chip disposed on the chip mounting portion; and (d) a plurality of wires connecting each of the plurality of leads and each of the plurality of pads formed on the semiconductor chip; Is provided.
- the semiconductor chip includes (c1) a flow rate detection unit formed on the main surface of the semiconductor substrate, (c2) a control circuit unit that controls the flow rate detection unit, and (c3) the main surface of the semiconductor substrate. The diaphragm formed in the area
- a flow rate sensor manufacturing method includes (a) a step of preparing a lead frame in which a first opening is formed, (b) a flow rate detection unit formed on a main surface of a semiconductor substrate, Providing a semiconductor chip having a diaphragm formed in a region opposite to the flow rate detection portion of the back surface of the semiconductor substrate opposite to the main surface. Next, (c) placing the semiconductor chip on the lead frame so that the diaphragm formed on the semiconductor chip and the first opening formed on the lead frame overlap in plan view. And (d) a step of connecting the semiconductor chip and the lead frame with a wire after the step (c).
- the said flow-path part is formed so that it may connect with the said flow-rate detection part of the said flow sensor, It is comprised so that the said gas may be guide
- the mounted member (frame body) is prevented in order to prevent cracking of the mounted member (frame body).
- the material of the body is not a silicon material that is the same material as the semiconductor chip, but a press product such as a press-workable aluminum alloy (Al alloy) or iron alloy (Fe alloy) or a resin molded product is used. It is.
- FIG. 6 is a cross-sectional view showing a manufacturing process of the flow sensor in the first embodiment. It is sectional drawing which shows the manufacturing process of the flow sensor following FIG.
- FIG. 8 is a cross-sectional view showing the flow sensor manufacturing process following FIG. 7. It is sectional drawing which shows the manufacturing process of the flow sensor following FIG.
- FIG. 10 is a cross-sectional view showing a flow sensor manufacturing process following FIG. 9.
- A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 2.
- FIG. (B) is a cross-sectional view taken along line AA in (a), and (c) is a cross-sectional view taken along line BB in (a).
- A) is a top view which shows the mounting structure before sealing of the flow sensor in Embodiment 3.
- FIG. (B) is a cross-sectional view taken along line AA of (a), and (c) is a plan view showing the back surface of the semiconductor chip.
- A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 3.
- FIG. (B) is a cross-sectional view taken along line AA in (a)
- (c) is a cross-sectional view taken along line BB in (a).
- FIG. (B) is a cross-sectional view taken along line AA in (a), and (c) is a cross-sectional view taken along line BB in (a). It is a top view which shows the mounting structure of the flow sensor after removing a dam bar.
- (A) is a top view which shows the mounting structure before sealing of the flow sensor in Embodiment 5.
- FIG. (B) is a cross-sectional view taken along line AA in (a), and (c) is a cross-sectional view taken along line BB in (a).
- (d) is a plan view showing the back surface of the semiconductor chip.
- (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 5.
- FIG. 10 is a cross-sectional view showing a manufacturing process of the flow sensor in the fifth embodiment.
- FIG. 26 is a cross-sectional view showing the flow rate sensor manufacturing process following FIG. 25.
- FIG. 27 is a cross-sectional view showing the flow rate sensor manufacturing process following FIG. 26. It is sectional drawing which shows the manufacturing process of the flow sensor following FIG. (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 6.
- FIG. 10 is a cross-sectional view showing a manufacturing process of the flow sensor in the fifth embodiment.
- FIG. 26 is a cross-sectional view showing the flow rate sensor manufacturing process following FIG. 25.
- FIG. 27 is a cross-sectional view showing the flow rate sensor manufacturing process following FIG. 26. It is sectional drawing which shows the manufacturing process of the flow sensor following FIG. (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 6.
- FIG. 1 is a cross-sectional view taken along line AA in (a), and (c) is a cross-sectional view taken along line BB in (a). It is a top view which shows the mounting structure of the flow sensor after removing a dam bar.
- (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 7, (b) is sectional drawing cut
- (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 8, (b) is sectional drawing cut
- A) is a top view which shows the mounting structure of the flow sensor module in Embodiment 9.
- FIG. 35 is a cross-sectional view showing the manufacturing process of the flow sensor module following FIG. 34.
- FIG. 36 is a cross-sectional view showing the flow rate sensor module manufacturing process following FIG. 35.
- A) is a top view which shows the mounting structure of the flow sensor module in Embodiment 10.
- FIG. (B) is a cross-sectional view taken along line AA in (a), and (c) is a cross-sectional view taken along line BB in (a).
- FIG. (A) is a top view which shows the mounting structure of the flow sensor module in Embodiment 11.
- FIG. (B) is a cross-sectional view taken along line AA in (a)
- (c) is a cross-sectional view taken along line BB in (a).
- (a) is a plan view of the structure of the fluid analysis model as viewed from above
- (b) is a cross-sectional view taken along line AA in (a)
- (c) is (a) 2 is a cross-sectional view taken along line BB in FIG.
- It is a graph which shows the result of having calculated the speed of the Y direction on predetermined conditions.
- It is a figure which shows the cross-section of the flow direction of the gas of the flow sensor in Embodiment 13.
- FIG. It is a figure explaining the sealing process which manufactures the flow sensor in Embodiment 13.
- It is sectional drawing which shows the structure of the flow sensor which this inventor examined.
- FIG. 4 is a cross-sectional view taken along line BB in FIG. (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 15, (b) is sectional drawing cut
- FIG. 25 is a cross-sectional view showing a mounting configuration after sealing a flow sensor according to a fifteenth embodiment.
- FIG. 25 is a cross-sectional view showing a mounting configuration after sealing a flow sensor according to a fifteenth embodiment.
- (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 15, (b) is sectional drawing cut
- FIG. 4 is a cross-sectional view taken along line BB in FIG.
- FIG. 4 is a cross-sectional view taken along line BB in FIG.
- FIG. 25 is a cross-sectional view showing a mounting configuration after sealing a flow sensor according to a fifteenth embodiment.
- A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 15, (b) is sectional drawing cut
- the constituent elements are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say.
- FIG. 1 is a circuit block diagram showing a circuit configuration of the flow sensor according to the first embodiment.
- the flow sensor in the first embodiment has a CPU (Central Processing Unit) 1 for controlling the flow sensor, and an input circuit 2 for inputting an input signal to the CPU 1. And it has the output circuit 3 for outputting the output signal from CPU1.
- the flow rate sensor is provided with a memory 4 for storing data, and the CPU 1 can access the memory 4 and refer to the data stored in the memory 4.
- the CPU 1 is connected to the base electrode of the transistor Tr through the output circuit 3.
- the collector electrode of the transistor Tr is connected to the power source PS, and the emitter electrode of the transistor Tr is connected to the ground (GND) via the heating resistor HR. Therefore, the transistor Tr is controlled by the CPU 1. That is, since the base electrode of the transistor Tr is connected to the CPU 1 via the output circuit 3, an output signal from the CPU 1 is input to the base electrode of the transistor Tr. As a result, the current flowing through the transistor Tr is controlled by an output signal (control signal) from the CPU 1.
- the current flowing through the transistor Tr is increased by the output signal from the CPU 1, the current supplied from the power source PS to the heating resistor HR is increased, and the heating amount of the heating resistor HR is increased.
- the flow rate sensor according to the first embodiment is configured such that the amount of current flowing through the heating resistor HR is controlled by the CPU 1 and the amount of heat generated from the heating resistor HR is thereby controlled by the CPU 1. I understand that.
- a heater control bridge HCB is provided in order to control the current flowing through the heating resistor HR by the CPU 1.
- the heater control bridge HCB is configured to detect the amount of heat released from the heating resistor HR and output the detection result to the input circuit 2.
- the CPU 1 can input the detection result from the heater control bridge HCB, and controls the current flowing through the transistor Tr based on this.
- the heater control bridge HCB includes resistors R1 to R4 that form a bridge between the reference voltage Vref1 and the ground (GND).
- the heater control bridge HCB configured as described above, when the gas heated by the heating resistor HR is higher than the intake air temperature by a certain temperature ( ⁇ T, for example, 100 ° C.), the potential of the node A and the node B
- ⁇ T the temperature
- the resistance values of the resistors R1 to R4 are set so that the potential difference between the potentials of the resistors R1 to R4 is 0V.
- the resistors R1 to R4 constituting the heater control bridge HCB are referred to as a component in which the resistor R1 and the resistor R3 are connected in series and a component in which the resistor R2 and the resistor R4 are connected in series.
- the bridge is configured so as to be connected in parallel between the voltage Vref1 and the ground (GND).
- a connection point between the resistor R1 and the resistor R3 is a node A
- a connection point between the resistor R2 and the resistor R4 is a node B. At this time, the gas heated by the heating resistor HR comes into contact with the resistor R1 constituting the heater control bridge HCB.
- the CPU 1 causes the gas heated by the heating resistor HR to be only a certain temperature ( ⁇ T, for example, 100 ° C.) higher than the intake air temperature based on the output of the heater control bridge HCB. It can be seen that the feedback control is performed so as to maintain a high constant value.
- an upstream resistance temperature detector UR1 and a downstream resistance temperature detector BR1 are connected in series between the reference voltage Vref2 and the ground (GND), and the upstream resistance temperature detector UR1 and the downstream resistance temperature detector.
- the connection point of BR1 is node C.
- an upstream resistance temperature detector UR2 and a downstream resistance temperature detector BR2 are connected in series between the ground (GND) and the reference voltage Vref2, and a connection point between the upstream resistance temperature detector UR2 and the downstream resistance temperature detector BR2. Is node D. Then, the potential of the node C and the potential of the node D are configured to be input to the CPU 1 via the input circuit 2.
- the flow sensor according to the first embodiment is configured as described above, and the operation thereof will be described below with reference to FIG.
- the CPU 1 outputs an output signal (control signal) to the base electrode of the transistor Tr via the output circuit 3, thereby causing a current to flow through the transistor Tr.
- a current flows from the power supply PS connected to the collector electrode of the transistor Tr to the heating resistor HR connected to the emitter electrode of the transistor Tr.
- the heating resistor HR generates heat.
- the gas heated by the heat generated from the heat generating resistor HR heats the resistor R1 constituting the heater control bridge HCB.
- the resistor is set so that the potential difference between the node A and the node B of the heater control bridge HCB becomes 0V.
- Each resistance value of R1 to R4 is set. For this reason, for example, when the gas heated by the heating resistor HR is increased by a certain temperature (for example, 100 ° C.), the potential difference between the node A and the node B of the heater control bridge HCB becomes 0V, This difference potential (0 V) is input to the CPU 1 via the input circuit 2. Then, the CPU 1 recognizing that the difference potential from the heater control bridge HCB is 0 V outputs an output signal (control signal) for maintaining the current amount of current to the base electrode of the transistor Tr via the output circuit 3. Output.
- the CPU 1 performs feedback control based on the output signal from the heater control bridge HCB so that the potential difference between the node A and the node B of the heater control bridge HCB is 0 V (equilibrium state). To do. From this, it can be seen that in the flow rate sensor according to the first embodiment, the gas heated by the heating resistor HR is controlled to have a constant temperature.
- the upstream resistance temperature detectors UR1 and UR2 are set so that the potential difference between the node C potential and the node D potential of the temperature sensor bridge TSB becomes 0V.
- Each resistance value of the downstream resistance thermometers BR1 and BR2 is set.
- the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 are configured to have the same distance from the heating resistor HR and the same resistance value.
- the difference potential between the node C and the node D becomes 0V, and this difference potential (0V) is passed through the input circuit 2.
- the CPU 1 recognizing that the potential difference from the temperature sensor bridge TSB is 0 V recognizes that the flow rate of the gas flowing in the direction of the arrow is zero, and the gas flow rate Q is zero via the output circuit 3. Is output from the flow sensor in the first embodiment.
- the layout configuration of the flow sensor according to the first embodiment will be described.
- the flow sensor in the first embodiment shown in FIG. 1 is formed on two semiconductor chips.
- the heating resistor HR, the heater control bridge HCB, and the temperature sensor bridge TSB are formed on one semiconductor chip, and the CPU 1, the input circuit 2, the output circuit 3, the memory 4, and the like are formed on another semiconductor chip.
- a layout configuration of a semiconductor chip on which the heating resistor HR, the heater control bridge HCB, and the temperature sensor bridge TSB are formed will be described.
- a flow rate detection unit FDU is formed in the surface region of the semiconductor chip CHP1 opposite to the back surface region where the diaphragm DF is thus formed.
- a heating resistor HR is formed at the center of the flow rate detection unit FDU, and a resistor R1 that forms a heater control bridge is formed around the heating resistor HR.
- Resistors R2 to R4 constituting the heater control bridge are formed outside the flow rate detection unit FDU.
- a heater control bridge is constituted by the resistors R1 to R4 formed in this way. In particular, since the resistor R1 constituting the heater control bridge is formed in the vicinity of the heating resistor HR, the temperature of the gas heated by the heat generated from the heating resistor HR is accurately reflected in the resistor R1.
- upstream resistance thermometers UR1 and UR2 and downstream resistance thermometers BR1 and BR2 are arranged so as to sandwich the heating resistor HR formed in the flow rate detection unit FDU.
- upstream resistance thermometers UR1 and UR2 are formed on the upstream side in the arrow direction in which gas flows, and downstream resistance thermometers BR1 and BR2 are formed in the downstream in the arrow direction in which gas flows.
- the temperature sensor bridge is formed by the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 arranged in the flow rate detection unit FDU.
- the heating resistor HR configured as described above, the resistors R1 to R4 constituting the heater control bridge, and the upstream temperature sensing resistors UR1 and UR2 and the downstream temperature sensing resistors BR1 and BR2 constituting the temperature sensor bridge are These are connected to the wiring WL1 and drawn out to the pads PD1 arranged along the lower side of the semiconductor chip CHP1.
- the flow sensor FSP in the prior art includes a rectangular (rectangular) wiring board WB, and the semiconductor chip CHP1 and the semiconductor chip CHP2 along the X direction of the wiring board WB. Are arranged side by side.
- the semiconductor chip CHP1 is provided with a flow rate detection unit FDU, and gas flows on the flow rate detection unit FDU. Specifically, the gas flows along the arrow direction (Y direction) on the flow rate detection unit FDU.
- the flow rate detection unit FDU formed on the semiconductor chip CHP1 is connected to a wiring WL1 provided on the semiconductor chip CHP1, and the wiring WL1 is connected to a wiring WL2 formed on the wiring board WB. ing.
- the connection region between the wiring WL1 formed on the semiconductor chip CHP1 and the wiring WL2 formed on the wiring substrate WB is covered with the potting resin POT.
- the wiring WL2 formed on the wiring board WB is connected to the semiconductor chip CHP2, and the semiconductor chip CHP2 is further connected to the wiring WL3 formed on the wiring board WB. In this way, the semiconductor chip CHP1 and the semiconductor chip CHP2 mounted on the wiring board WB are electrically connected.
- a groove is formed in a partial region of the wiring board WB, and the semiconductor chip CHP1 is disposed inside the groove.
- a diaphragm DF is formed on the rear surface side of the semiconductor chip CHP1, and a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 opposite to the diaphragm DF.
- a pad PD1 is formed on the surface of the semiconductor chip CHP1 away from the flow rate detection unit FDU.
- the flow rate detection unit FDU and the pad PD1 are connected by a wiring WL1 shown in FIG.
- the pressure inside the diaphragm DF can be made equal to the pressure in the external space, and the stress due to the pressure difference acts on the flow rate detection unit FDU formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF. That is restrained.
- the pad PD1 formed on the semiconductor chip CHP1 is connected to the wiring WL2 formed on the wiring board WB by a wire W1, and the wire W1 is sealed with a potting resin POT.
- the semiconductor chip CHP2 is connected to the wiring WL2 formed on the wiring board WB by the bump electrode BMP and also connected to the wiring WL3 formed on the wiring board WB via the bump electrode.
- the fixing of the gold wire (wire W1) with the potting resin POT is not performed in a state in which the semiconductor chip CHP1 is fixed with a mold or the like.
- the potting resin POT is formed by dropping, there is a problem that the dimensional accuracy of the potting resin POT is low.
- the mounting position of the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed is shifted for each flow sensor FSP, and the formation position of the potting resin POT is slightly different. There will be variations in detection performance.
- FIG. 4 is a diagram showing a mounting configuration of the flow sensor FS1 in the first embodiment, and is a diagram showing a configuration before sealing with resin.
- FIG. 4A is a plan view showing a mounting configuration of the flow rate sensor FS1 in the first embodiment.
- 4B is a cross-sectional view taken along the line AA in FIG. 4A, and
- FIG. 4C is a plan view showing the back surface of the semiconductor chip CHP1.
- the flow sensor FS1 includes a rectangular wiring board WB made of, for example, a glass epoxy resin, and is mounted on the wiring board WB.
- Semiconductor chips CHP1 and CHP2 are mounted so as to be aligned in the X direction.
- the semiconductor chip CHP1 has a rectangular shape, and a flow rate detection unit FDU is formed substantially at the center.
- a wiring WL1 connected to the flow rate detection unit FDU is formed on the semiconductor chip CHP1, and the wiring WL1 is connected to a plurality of pads PD1 formed along one side of the semiconductor chip CHP1. That is, the flow rate detection unit FDU and the plurality of pads PD1 are connected by the wiring WL1.
- These pads PD1 are connected to a terminal TE1 formed on the wiring board WB via, for example, a wire W1 made of a gold wire.
- the terminal TE1 formed on the wiring board WB is connected to the wiring WL2 formed on the wiring board WB, and the wiring WL2 is connected to the terminal TE2.
- the terminal TE2 is connected to a pad PD2 formed on the semiconductor chip CHP2 via a wire W2 made of, for example, a gold wire.
- an integrated circuit made of semiconductor elements such as MISFET (Metal Insulator Semiconductor Semiconductor Field Field Effect Transistor) and wiring is formed on the semiconductor chip CHP2.
- MISFET Metal Insulator Semiconductor Semiconductor Field Field Effect Transistor
- an integrated circuit constituting the CPU 1, the input circuit 2, the output circuit 3 or the memory 4 shown in FIG. 1 is formed.
- These integrated circuits are connected to the pads PD2 and PD3 that function as external connection terminals.
- the pad PD3 formed on the semiconductor chip CHP2 is connected to a terminal TE3 formed on the wiring board WB via, for example, a wire W3 made of a gold wire.
- the terminal TE3 is connected to the wiring board WB.
- the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed and the semiconductor chip CHP2 in which the control circuit is formed are connected via the wiring WL2 formed on the wiring board WB. Recognize.
- a groove (cavity) is formed in a predetermined region of the wiring board WB, and the semiconductor chip CHP1 is mounted inside the groove.
- the semiconductor chip CHP1 is bonded to the wiring board WB with an adhesive ADH1.
- a diaphragm DF thin plate portion
- a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF.
- an opening OP1 is formed at the bottom of the groove existing below the diaphragm DF.
- the diaphragm DF has a function of making the flow rate detection unit FDU formed on the surface of the semiconductor chip CHP1 as easily as possible.
- the flow rate detection unit FDU is formed with upstream resistance temperature detectors UR1 and UR2 and downstream resistance temperature detectors BR1 and BR2.
- the temperatures of the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 change, and due to this temperature change, the upstream resistance thermometer resistances UR1 and UR1,
- the gas flow rate is detected by utilizing the change in the resistance values of UR2 and downstream resistance temperature detectors BR1 and BR2.
- the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 constituting the flow rate detection unit FDU detect only a temperature change caused by the flow of gas as much as possible. It is desirable to remove temperature changes due to heat conduction through the interior. Therefore, a diaphragm DF, which is a region where the thickness of the semiconductor chip CHP1 is reduced, is provided on the back surface of the semiconductor chip CHP1 facing the flow rate detection unit FDU, and heat is supplied to the flow rate detection unit FDU via the inside of the semiconductor chip CHP1. The effect of conduction is reduced.
- the semiconductor chip CHP1 is provided with a diaphragm DF. If the inner space of the diaphragm DF is isolated from the outer space of the semiconductor chip CHP1, the pressure in the outer space and the inner pressure in the diaphragm DF are reduced. Will be different. In this case, due to the difference between the pressure in the external space and the internal pressure in the diaphragm DF, stress is generated in the diaphragm DF, and the detection accuracy of the flow rate detection unit FDU formed on the diaphragm DF may be reduced. For this reason, in the first embodiment, the opening OP1 is provided at the bottom of the groove existing below the diaphragm DF.
- the internal space and the external space of the diaphragm DF communicate with each other through the opening OP1, and the pressure in the external space and the internal pressure in the diaphragm DF can be made equal.
- the adhesive ADH1 that bonds the semiconductor chip CHP1 and the wiring board WB, and the adhesive ADH2 that bonds the semiconductor chip CHP2 and the wiring board WB are, for example, thermosetting resins such as epoxy resin and polyurethane resin, A thermoplastic resin such as a polyimide resin or an acrylic resin can be used.
- FIG. 4C is a plan view showing the back surface of the semiconductor chip CHP1.
- a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an adhesive ADH1 is applied so as to surround the diaphragm DF.
- FIG. 4C shows an example in which the adhesive ADH1 is applied so as to surround the diaphragm DF in a square shape.
- the present invention is not limited to this.
- the diaphragm DF is surrounded by an arbitrary shape such as an elliptical shape.
- the adhesive ADH1 may be applied.
- FIG. 5 is a diagram showing a mounting configuration of the flow sensor FS1 in the first embodiment, and is a diagram showing a configuration after sealing with resin.
- FIG. 5A is a plan view showing a mounting configuration of the flow sensor FS1 in the first embodiment.
- 5B is a cross-sectional view taken along the line AA in FIG. 5A
- FIG. 5C is a cross-sectional view taken along the line BB in FIG. 5A.
- the flow rate detector FDU formed in the semiconductor chip CHP1 is exposed and the semiconductor is exposed.
- a part of the chip CHP1 and the entire semiconductor chip CHP2 are covered with the resin MR. This is the first feature point of the first embodiment.
- the conventional flow sensor FSP shown in FIG. 3 has a structure in which only the gold wire (wire W1) is covered with the potting resin POT, and the semiconductor chip CHP1 and the semiconductor chip CHP2 are not covered with the resin. I am doing.
- the fixing of the gold wire (wire W1) with the potting resin POT is not performed in a state where the semiconductor chip CHP1 is fixed with a mold or the like. Therefore, the contraction of the potting resin POT causes the semiconductor chip CHP1 to shift from the mounting position. End up.
- the potting resin POT is formed by dropping, there is a problem that the dimensional accuracy of the potting resin POT is low.
- the parts and the semiconductor chip CHP2 it is possible to seal with resin MR.
- a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow sensor FS1.
- variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
- the position of the flow rate detection unit FDU that detects the flow rate of gas can be matched by each flow rate sensor FS1, so that there is performance variation in detecting the gas flow rate in each flow rate sensor FS1. The remarkable effect which can be suppressed can be acquired.
- the semiconductor chip CHP1 can be sealed with the resin MR while fixing the semiconductor chip CHP1 using a mold, a part of the semiconductor chip CHP1 and the semiconductor chip CHP2 are exposed while exposing the flow rate detection unit FDU. collectively it is of taking the configuration of sealing with resin MR. That is, according to the first embodiment, since the wiring substrate WB including the semiconductor chip CHP1 can be sealed with the mold, the positioning accuracy of the semiconductor chip CHP1 is improved and the mold is further improved.
- the heat curing time of the resin MR can be shortened by heat conduction from the resin to the resin MR injected.
- the conventional flow sensor FSP shown in FIG. 3 uses a potting resin POT.
- the potting resin POT cannot shorten the time for heating and curing. The time will be longer. As a result, the throughput is reduced, the cost rises.
- the curing time of the resin MR can be shortened by the heat conduction from the mold to the resin MR injected, so that the throughput can be improved. can, as a result, it is possible to reduce the manufacturing cost of flow sensor FS1 of the first embodiment.
- thermosetting resin such as an epoxy resin or a phenol resin
- thermoplastic resin such as polycarbonate or polyethylene terephthalate
- filler such as glass or mica
- the second feature point in the first embodiment is that the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU, It exists in the point higher than the height of the surface of semiconductor chip CHP1 containing the flow volume detection part FDU. That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
- a recess is formed in the resin MR, and the flow rate detection unit FDU is formed inside the recess formed in the resin MR.
- the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
- the semiconductor chip CHP1 is made of the resin MR. And the damage of the semiconductor chip CHP1 can be suppressed.
- the region of most of the semiconductor chips CHP1 other than the flow rate detection unit FDU is also exposed. There is a high possibility that the semiconductor chip CHP1 is damaged in contact with the semiconductor chip CHP1.
- the region of most of the semiconductor chip CHP1 other than the exposed flow rate detection unit FDU is covered with the resin MR, and the exposed flow rate detection unit. In combination with the point that the FDU itself is lower than the height of the resin MR, it is possible to effectively prevent the semiconductor chip CHP1 from being damaged.
- the third feature point in the first embodiment is the direction in which the gas flows on the flow rate detection unit FDU (arrow direction) across the exposed flow rate detection unit FDU.
- a pair of air flow control units FCU1 and FCU2 having an elongated shape in a direction parallel to the Y direction) is integrally formed with the resin MR (sealing body).
- the resin MR coupling body
- the gas flow is disturbed by the dimensional accuracy of the potting resin POT, and there is a possibility that the accurate gas flow rate cannot be measured.
- the gas flow path dimensions are as follows. The gas cannot be flowed to the upper part of the flow rate detection unit FDU in a state where the pressure is reduced. Therefore, particularly when the flow rate of the flowing gas is small, there is a problem that the detection sensitivity of the gas flow rate is lowered.
- the exposed flow rate detection unit FDU is sandwiched, and in a direction parallel to the traveling direction of the gas flowing on the flow rate detection unit FDU (arrow direction, Y direction).
- a pair of airflow control units FCU1 and FCU2 having a long shape are integrally formed with the resin MR (sealing body).
- a pair of airflow control units FCU1 and FCU2 form passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU.
- the pair of air flow control units FCU1 and FCU2 are formed with high accuracy by being sandwiched by a mold having high dimensional accuracy integrally with the resin MR.
- the flow sensor FS1 in the first embodiment it is possible to accurately measure the gas flow rate without disturbing the gas flow due to the dimensional accuracy of the pair of airflow control units FCU1 and FCU2. . Furthermore, in this Embodiment 1, as above-mentioned, a pair of airflow control part FCU1, FCU2 forms the channel
- the fourth feature point in the first embodiment is that the flow rate detection unit FDU exposed from the resin MR (sealing body) and the resin MR (sealing body)
- the boundary region has a tapered shape, and the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is parallel to the traveling direction of the gas. This is a point that is steeper than the tapered shape of the boundary region.
- the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
- the angle of the tapered shape TP1 in the gas flow direction (Y direction) is reduced.
- difference of the flow measurement by the backflow or turbulent flow of gas can be suppressed.
- the angle of the tapered shape TP2 in the direction orthogonal to the gas flow direction (X direction) the wall of the gas flow path can be formed, and the gas flow in the X direction can be suppressed. it can.
- the flow sensor FS1 in the first embodiment has the fifth feature point and the sixth feature point.
- FIG. 5B and FIG. Will be described.
- 5B is a cross-sectional view taken along the line AA in FIG. 5A
- FIG. 5C is a cross-sectional view taken along the line BB in FIG. 5A.
- a groove is formed in the wiring board WB, and the semiconductor chip CHP1 is bonded to the inside of the groove by an adhesive ADH1.
- a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an opening OP1 is formed at the bottom of the groove below the diaphragm DF.
- a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a pad PD1 connected to the flow rate detection unit FDU is formed.
- the pad PD1 is connected to the wiring WL2 formed on the wiring board WB via the wire W1, and the wiring WL2 is formed on the semiconductor chip CHP2 mounted on the wiring board WB via the adhesive ADH2.
- the pad PD2 is connected with the wire W2.
- the pad PD3 formed on the semiconductor chip CHP2 is connected to the wiring WL3 formed on the wiring board WB via the wire W3.
- a part of the wire W2, the semiconductor chip CHP2, the wire W3, and the wiring WL3 are collectively sealed with the resin MR.
- the exposed boundary region between the flow rate detection unit FDU and the resin MR has a tapered shape TP2, and the pair of air flow control units FCU1 and FCU2 are formed integrally with the resin MR so as to sandwich the flow rate detection unit FDU. Has been.
- a groove is formed in the wiring board WB, and the semiconductor chip CHP1 is bonded to the inside of the groove by an adhesive ADH1.
- a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an opening OP1 is formed at the bottom of the groove below the diaphragm DF.
- a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a resin MR is formed so as to surround the periphery of the semiconductor chip CHP1.
- the boundary region between the flow rate detection unit FDU and the resin MR has a tapered shape TP1, and the angle of the tapered shape TP1 is gentler than the angle of the tapered shape TP2 shown in FIG.
- the fifth feature point in the first embodiment is that the bottom of the groove below the diaphragm DF formed on the back surface of the semiconductor chip CHP1.
- the opening OP1 is formed. The reason why the opening OP1 is provided in the wiring board WB in the first embodiment will be described.
- the adhesive ADH is applied only to one end of the semiconductor chip CHP1, and the other end is bonded.
- the material ADH is not applied and a gap is formed.
- the flow rate sensor FS1 according to the first embodiment shown in FIGS. 5B and 5C cannot take the same configuration as the conventional flow rate sensor FSP shown in FIG. This is because in the flow rate sensor FS1 in the first embodiment, the region of the semiconductor chip CHP1 excluding the flow rate detection unit FDU and the vicinity thereof is covered with the resin MR. That is, in the first embodiment, when a gap is formed between the semiconductor chip CHP1 and the bottom of the groove, the resin MR enters the inner space of the diaphragm DF from the gap.
- the adhesive material ADH1 is applied to both ends of the semiconductor chip CHP1, and the adhesive material ADH1 prevents the resin MR from entering the inner space of the diaphragm DF.
- the adhesive ADH1 has an original function of bonding the semiconductor chip CHP1 and the wiring board WB, and prevents the resin MR from entering the inner space of the diaphragm DF. It also has a function peculiar to the first embodiment.
- the adhesive is provided so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1. The material ADH1 is applied.
- the inner space of the diaphragm DF and the outer space of the flow rate sensor FS1 are isolated from each other.
- the pressure in the space is different from the pressure in the external space of the flow sensor FS1, and stress due to the differential pressure is applied to the diaphragm DF. Therefore, in the first embodiment, in order to prevent the resin MR from entering the internal space of the diaphragm DF, for example, as shown in FIG. 4C, the diaphragm formed on the back surface of the semiconductor chip CHP1.
- the sixth feature point in the first embodiment is that not only the semiconductor chip CHP1 and the wiring board WB but also the semiconductor chip CHP2 and the wiring board WB are connected by wires W2 and W3.
- the semiconductor chip CHP2 is connected to the wiring board WB using the bump electrode BMP. This is because when the semiconductor chip CHP2 is also connected with a wire, it is necessary to further seal the wire with a potting resin POT in order to protect the wire. That is, as shown in FIG. 3, since the semiconductor chip CHP1 and the wiring board WB are connected by the wire W1, it is necessary to seal the wire W1 with the potting resin POT.
- the semiconductor chip CHP1 and the wiring board WB not only the semiconductor chip CHP1 and the wiring board WB but also the semiconductor chip CHP2 and the wiring board WB are connected by the wires W2 and W3.
- This configuration can be realized by adopting the characteristic configuration according to the first embodiment in which the entire semiconductor chip CHP1 and the semiconductor chip CHP2 except the flow rate detection unit FDU and the vicinity thereof are collectively sealed with the resin MR. That is, according to the first embodiment, since the semiconductor chip CHP2 is also collectively sealed with the resin MR, the semiconductor chip CHP1 and the wiring board can be connected even if the semiconductor chip CHP2 and the wiring board WB are connected by the wires W2 and W3.
- the wire W2 and the wire W3 can be protected by the resin MR simultaneously with the wire W1 connecting the WB. That is, in the first embodiment, since the semiconductor chip CHP1 and the semiconductor chip CHP2 are collectively sealed with the resin MR, the connection between the semiconductor chip CHP2 and the wiring board WB is made by the bump electrode, but the wire is made by wire. Note that the sealing of the resin MR is completed in one time. Therefore, in the first embodiment, the manufacturing cost can be reduced by connecting the semiconductor chip CHP2 to the wiring board WB with the wires W2 and W3 without using solder balls.
- the flow sensor FS1 in the first embodiment is configured as described above, and the manufacturing method thereof will be described below with reference to FIGS. 6 to 10 show the manufacturing process in the cross section taken along the line AA in FIG.
- a wiring board WB made of glass epoxy resin is prepared.
- a groove is formed on the main surface (surface, upper surface) of the wiring board WB, and the opening OP1 is formed at the bottom of the groove.
- wiring WL2 and wiring WL3 are also formed on the main surface of the wiring board WB.
- the semiconductor chip CHP1 and the semiconductor chip CHP2 are mounted on the wiring board WB.
- the semiconductor chip CHP1 is connected to the inside of the groove formed in the wiring board WB with the adhesive ADH1.
- the semiconductor chip CHP1 is mounted on the wiring board WB so that the diaphragm DF formed on the semiconductor chip CHP1 communicates with the opening OP1 formed in the wiring board WB.
- the semiconductor chip CHP1 is formed with a flow rate detection unit FDU, wiring (not shown), and a pad PD1 by a normal semiconductor manufacturing process.
- the pad PD1 formed on the semiconductor chip CHP1 and the wiring WL2 formed on the wiring board WB are connected by the wire W1 (wire bonding).
- the pad PD2 formed on the semiconductor chip CHP2 is connected to the wiring WL2 by the wire W2
- the pad PD3 formed on the semiconductor chip CHP2 is connected to the wiring WL3 by the wire W3.
- the wires W1 to W3 are made of gold wires, for example.
- the surface of the semiconductor chip CHP1 excluding the flow rate detection unit FDU and its vicinity, the wire W1, the wiring WL2, the wire W2, the entire main surface of the semiconductor chip CHP2, the wire W3 and the wiring WL3 are made of resin MR. Seal (molding process). Specifically, as shown in FIG. 9, the wiring board WB on which the semiconductor chip CHP1 and the semiconductor chip CHP2 are mounted is sandwiched between the upper mold UM and the lower mold BM via the first space.
- the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed can be fixed with a mold, the position of the semiconductor chip CHP1 is suppressed while suppressing the displacement of the semiconductor chip CHP1.
- a part and the semiconductor chip CHP2 can be sealed with the resin MR. This is because, according to the flow sensor manufacturing method of the first embodiment, a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow sensor. This means that variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
- the position of the flow rate detection unit FDU that detects the gas flow rate can be matched by each flow rate sensor, it is possible to suppress the performance variation of detecting the gas flow rate in each flow rate sensor. A remarkable effect can be obtained.
- the flow rate sensor manufacturing method is characterized in that the flow rate detection unit FDU formed in the semiconductor chip CHP1 is surrounded by the second space SP2 isolated from the first space.
- the wiring board WB on which the semiconductor chip CHP1 is mounted is sandwiched between the mold BM and the upper mold UM.
- the flow sensor manufacturing method is characterized in that when the wiring board WB mounted with the semiconductor chip CHP1 is sandwiched between the upper mold UM and the lower mold BM, the wiring board WB mounted with the semiconductor chip CHP1.
- the elastic film LAF is interposed between the upper mold UM and the upper mold UM.
- the wiring substrate WB on which the semiconductor chip CHP1 is mounted is connected to the upper mold UM.
- a gap is generated, and the resin MR leaks onto the semiconductor chip CHP1 from this gap.
- the force applied to the semiconductor chip CHP1 increases when the wiring board WB on which the semiconductor chip CHP1 is mounted is sandwiched between the upper mold UM and the lower mold BM.
- the semiconductor chip CHP1 may be broken.
- the wiring board on which the semiconductor chip CHP1 is mounted in order to prevent resin leakage onto the semiconductor chip CHP1 due to the above-described thickness variation of the semiconductor chip CHP1 or breakage of the semiconductor chip CHP1, the wiring board on which the semiconductor chip CHP1 is mounted.
- a device is devised in which an elastic film LAF is interposed between the WB and the upper mold UM.
- an elastic film LAF is interposed between the WB and the upper mold UM.
- the elastic film LAF is soft when the wiring board WB on which the semiconductor chip CHP1 is mounted is sandwiched between the upper mold UM and the lower mold BM.
- the dimension of the elastic film LAF in the thickness direction changes so as to absorb the thickness of the chip CHP1.
- a polymer material such as Teflon (registered trademark) or a fluororesin can be used.
- FIG. 11 is a diagram illustrating a mounting configuration of the flow rate sensor FS2 according to the second embodiment, and is a diagram illustrating a configuration after sealing with a resin.
- FIG. 11A is a plan view showing a mounting configuration of the flow rate sensor FS2 in the second embodiment.
- 11B is a cross-sectional view taken along the line AA in FIG. 11A
- FIG. 11C is a cross-sectional view taken along the line BB in FIG. 11A.
- the mounting configuration of the flow sensor FS2 in the second embodiment is the same as the mounting configuration of the flow sensor FS1 in the first embodiment, except that the airflow control units FCU1 and FCU2 are not provided. Therefore, the flow rate sensor FS2 in the second embodiment also has the first to second feature points and the fourth to sixth feature points described in the first embodiment.
- the flow rate sensor FS2 in the second embodiment a part of the semiconductor chip CHP1 and the flow rate detection unit FDU formed in the semiconductor chip CHP1 are exposed.
- the entire semiconductor chip CHP2 is covered with the resin MR (first feature point). That is, in the second embodiment, the region of the semiconductor chip CHP1 other than the flow rate detection unit FDU and the entire region of the semiconductor chip CHP2 are collectively sealed with the resin MR.
- the sealing with the resin MR can be performed in a state in which the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed is fixed by a mold, and therefore, the semiconductor chip CHP1 can be prevented from being displaced and one of the semiconductor chips CHP1 is suppressed.
- the part and the semiconductor chip CHP2 can be sealed with the resin MR.
- a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow rate sensor FS2.
- variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
- the position of the flow rate detection unit FDU that detects the flow rate of gas can be matched by each flow rate sensor FS2, so that the performance variation of detecting the gas flow rate in each flow rate sensor FS2 is reduced. The remarkable effect which can be suppressed can be acquired.
- the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU is the flow rate.
- the height of the surface of the semiconductor chip CHP1 including the detection unit FDU is higher (second feature point). That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
- the semiconductor device in which the flow rate detection unit FDU is formed can be prevented from colliding with the flow rate detection unit FDU where the component is exposed at the time of mounting and assembly of the component.
- Breakage of the chip CHP1 can be prevented. That is, the height of the resin MR sandwiching the flow rate detection unit FDU is higher than the height of the exposed flow rate detection unit FDU. For this reason, when the component comes into contact, first, since it comes into contact with the resin MR having a high height, the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
- the region has a tapered shape, and the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is the boundary parallel to the traveling direction of the gas. It is steeper than the tapered shape of the region (fourth feature point).
- the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
- the dimensional change of the flow path of the gas flowing in the Y direction can be reduced.
- difference of the flow measurement by the backflow or turbulent flow of gas can be suppressed.
- the angle of the tapered shape TP2 in the direction orthogonal to the gas flow direction (X direction) the wall of the gas flow path can be formed, and the gas flow in the X direction can be suppressed. it can.
- the adhesive ADH1 is applied so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1.
- the adhesive ADH1 is applied so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1.
- it is below the diaphragm DF formed on the back surface of the semiconductor chip CHP1.
- An opening OP1 is formed at the bottom of the groove (fifth feature point).
- the internal space of the diaphragm DF communicates with the external space of the flow sensor FS2 through the opening OP1 formed in the bottom of the groove of the wiring board WB. become.
- the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow rate sensor FS2 can be equalized, and stress can be suppressed from being applied to the diaphragm DF.
- the mounting configuration of the flow sensor is devised in order to solve the problem of the performance deterioration of the FSP of the flow sensor based on the performance variation existing in the above-described conventional flow sensor FSP.
- a mounting configuration of the flow sensor according to the third embodiment to which this device is applied will be described with reference to the drawings.
- the example in which the semiconductor chip CHP1 and the semiconductor chip CHP2 are mounted on the wiring substrate WB has been described.
- a lead frame is used instead of the wiring substrate WB. An example to be used will be described.
- a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and further, a pad PD1 connected to the flow rate detection unit FDU is formed.
- the pad PD1 is connected to a lead LD1 formed on the lead frame LF via a wire W1
- the lead LD1 is formed on a semiconductor chip CHP2 mounted on the chip mounting portion TAB2 via an adhesive ADH2.
- the pad PD2 is connected with the wire W2.
- the pad PD3 formed on the semiconductor chip CHP2 is connected to the lead LD2 formed on the lead frame LF via the wire W3.
- the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed can be fixed with a mold, it is possible to suppress the positional deviation of the semiconductor chip CHP1 and prevent the semiconductor chip CHP1 from being displaced.
- a part and the semiconductor chip CHP2 can be sealed with the resin MR. This is because, according to the method of manufacturing the flow sensor in the third embodiment, a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow sensor. This means that variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
- the position of the flow rate detection unit FDU that detects the gas flow rate can be matched by each flow rate sensor, it is possible to suppress the performance variation of detecting the gas flow rate in each flow rate sensor. A remarkable effect can be obtained.
- the force applied to the semiconductor chip CHP1 increases when the lead frame LF on which the semiconductor chip CHP1 is mounted is sandwiched between the upper mold UM and the lower mold BM.
- the semiconductor chip CHP1 may be broken.
- the lead frame on which the semiconductor chip CHP1 is mounted is prevented.
- a device is devised in which an elastic film LAF is interposed between the LF and the upper mold UM.
- an elastic film LAF is interposed between the LF and the upper mold UM.
- the elastic film LAF is soft when the lead frame LF mounting the semiconductor chip CHP1 is sandwiched between the upper mold UM and the lower mold BM.
- the dimension in the thickness direction of the elastic film LAF changes so as to absorb the thickness of the chip CHP1.
- the resin MR also flows into the back side of the lead frame LF. Therefore, since the opening OP1 is formed at the bottom of the chip mounting portion TAB1, there is a concern that the resin MR flows into the internal space of the diaphragm DF from the opening OP1. Therefore, in the third embodiment, the shape of the lower mold BM that sandwiches the lead frame LF is devised. Specifically, as shown in FIG. 18, a protruding insert IP1 is formed in the lower mold BM, and is formed in the lower mold BM when the lead frame LF is sandwiched between the upper mold UM and the lower mold BM.
- the opening OP2 is produced as a result of forming a pedestal on the insert piece IP1, and the cross-sectional area of the opening OP2 is larger than the cross-sectional area of the opening OP1.
- the internal space of the diaphragm DF flows through the opening OP1 formed at the bottom of the chip mounting portion TAB1 and the opening OP2 formed in the resin MR. It communicates with the external space of the sensor FS3.
- the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow sensor FS3 can be made equal, and the stress can be suppressed from being applied to the diaphragm DF.
- the mounting configuration of the flow sensor FS4 in the fourth embodiment is the same as the mounting configuration of the flow sensor FS3 in the third embodiment, except that the airflow control units FCU1 and FCU2 are not provided. Therefore, the flow rate sensor FS4 according to the fourth embodiment also has the first to second feature points and the fourth to sixth feature points described in the third embodiment.
- a polyimide film may be formed on the outermost surface (element formation surface) of the semiconductor chip CHP1 for the purpose of a stress buffering function with a resin to be bonded, a surface protection function, an insulation protection function, or the like. To do.
- the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU is the flow rate.
- the height of the surface of the semiconductor chip CHP1 including the detection unit FDU is higher (second feature point). That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
- the semiconductor device in which the flow rate detection unit FDU is formed can be prevented from colliding with the flow rate detection unit FDU where the component is exposed at the time of mounting and assembly of the component.
- Breakage of the chip CHP1 can be prevented. That is, the height of the resin MR sandwiching the flow rate detection unit FDU is higher than the height of the exposed flow rate detection unit FDU. For this reason, when the component comes into contact, first, it comes into contact with the high resin MR, so that the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
- the adhesive ADH1 is applied so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1. It is premised on taking the composition to do.
- the bottom of the chip mounting portion TAB1 below the diaphragm DF formed on the back surface of the semiconductor chip CHP1 is formed.
- the opening OP1 is formed, and the opening OP2 is provided in the resin MR that covers the back surface of the chip mounting portion TAB1 (fifth feature point).
- FIG. 21 is a plan view showing a mounting configuration of the flow sensor FS4 after the dam bar DM is removed. As shown in FIG. 21, by cutting the dam bar DM, it can be seen that a plurality of electrical signals can be independently taken out from the plurality of leads LD2.
- the flow rate sensors FS1 to FS4 in the first to fourth embodiments are configured to include the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed and the semiconductor chip CHP2 in which the control circuit is formed. Now, a flow sensor in which a flow rate detection unit and a control circuit are formed on one semiconductor chip will be described.
- FIG. 22 is a diagram illustrating a mounting configuration of the flow sensor FS5 according to the fifth embodiment, and is a diagram illustrating a configuration before sealing with resin.
- FIG. 22A is a plan view showing a mounting configuration of the flow rate sensor FS5 in the fifth embodiment.
- 22B is a cross-sectional view taken along the line AA in FIG. 22A
- FIG. 22C is a cross-sectional view taken along the line BB in FIG. 22A.
- FIG. 22D is a plan view showing the back surface of the semiconductor chip CHP1.
- the semiconductor chip CHP1 has a rectangular shape, and a flow rate detection unit FDU is formed substantially at the center.
- a wiring WL1A connected to the flow rate detection unit FDU is formed on the semiconductor chip CHP1, and the wiring WL1A is connected to the control unit CU formed on the semiconductor chip CHP1.
- the control unit CU an integrated circuit composed of semiconductor elements such as MISFETs (Metal Insulators, Semiconductors, Fields, Effects, and Transistors) and wirings is formed. Specifically, an integrated circuit constituting the CPU 1, the input circuit 2, the output circuit 3 or the memory 4 shown in FIG. 1 is formed.
- the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 so that the long side of the rectangular semiconductor chip CHP1 is parallel to the gas flow direction (arrow direction, Y direction). ing.
- a plurality of pads PD1 and PD2 are arranged along the long side direction on the long side of the semiconductor chip CHP1.
- Each of the plurality of pads PD1 and each of the plurality of leads LD1 are connected by a plurality of wires W1 arranged so as to straddle the long side of the semiconductor chip CHP1.
- each of the plurality of pads PD2 and each of the plurality of leads LD2 are connected by a plurality of wires W2 arranged so as to straddle the long side of the semiconductor chip CHP1.
- the semiconductor chip CHP1 is arranged along the long side of the rectangular semiconductor chip CHP1, compared to the case where the plurality of pads PD1 and PD2 are arranged in the short side direction of the semiconductor chip CHP1, Many pads PD1 and PD2 can be formed on the semiconductor chip CHP1.
- the semiconductor chip CHP1 is arranged by arranging a large number of pads PD1 and PD2 in the long side direction. The upper area can be used effectively.
- a chip mounting portion TAB1 is formed on the lead frame LF, and the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1.
- the semiconductor chip CHP1 is bonded to the chip mounting portion TAB1 with an adhesive ADH1.
- a diaphragm DF thin plate portion
- a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF.
- an opening OP1 is formed at the bottom of the chip mounting portion TAB1 existing below the diaphragm DF.
- a pad PD1 and a pad PD2 are formed on the surface (upper surface) of the semiconductor chip CHP1, and the pad PD1 is formed in the lead frame LF. Is connected to the lead LD1 formed on the wire W1. Similarly, the pad PD2 is connected to a lead LD2 formed on the lead frame LF via a wire W2.
- the chip mounting portion TAB1 and the protruding lead PLD are formed on the lead frame LF, and the chip mounting portion TAB1 and the protruding lead PLD are integrally formed.
- the semiconductor chip CHP1 is bonded by an adhesive ADH1.
- a diaphragm DF thin plate portion
- a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF.
- an opening OP1 is formed at the bottom of the chip mounting portion TAB1 existing below the diaphragm DF.
- a control unit CU is formed on the surface of the semiconductor chip CHP1 so as to be aligned with the flow rate detection unit FDU.
- the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU is the flow rate.
- the height of the surface of the semiconductor chip CHP1 including the detection unit FDU is higher (second feature point). That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
- the resin MR partially covers the upper part of the semiconductor chip CHP1 in the cross section in the direction parallel to the air flow (Y direction). (2B feature point).
- the contact area between the semiconductor chip CHP1 and the resin MR increases in the cross section in the direction parallel to the air flow, and therefore, the separation of the interface between the semiconductor chip CHP1 and the resin MR can be prevented.
- the fifth embodiment it is possible to avoid the problem that a crack grows from the peeled portion and a large crack is generated, and it is possible to suppress the turbulence of the air above the flow rate detection unit FDU. Therefore, it is possible to improve the measurement accuracy of the accurate air flow rate in the flow rate detection unit FDU.
- the gas flow rate can be accurately measured without the gas flow being disturbed by the dimensional accuracy of the pair of air flow control units FCU1 and FCU2. .
- the pair of airflow control units FCU1 and FCU2 form the passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU. For this reason, gas can be flowed to the upper part of flow volume detection part FDU in the state where the flow path size of gas was narrowed down.
- the region has a tapered shape, and the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is the boundary parallel to the traveling direction of the gas. It is steeper than the tapered shape of the region (fourth feature point).
- a chip mounting portion TAB1 is formed on the lead frame LF, and the semiconductor chip CHP1 is bonded to the chip mounting portion TAB1 with an adhesive ADH1.
- a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an opening OP1 is formed at the bottom of the chip mounting portion TAB1 below the diaphragm DF.
- the back surface of the lead frame LF is covered with the resin MR, but the opening OP2 is formed in the resin MR formed on the back surface of the chip mounting portion TAB1 among the back surface of the lead frame LF.
- the opening OP1 formed in the chip mounting portion TAB1 and the opening OP2 formed in the resin MR are in communication with each other, and the internal space of the diaphragm DF is defined through the opening OP1 and the opening OP2. It is connected to the external space of the flow sensor FS3.
- the cross-sectional area of the opening OP1 is configured to be smaller than the cross-sectional area of the opening OP2.
- the sectional area of the opening OP1 is configured to be larger than the sectional area of the opening OP2.
- the cross-sectional area of the opening OP1 is configured to be smaller than the cross-sectional area of the opening OP2.
- the sectional area of the opening OP1 is configured to be larger than the sectional area of the opening OP2.
- a flow rate detection unit FDU and a control unit CU are formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a resin MR is formed so as to surround the semiconductor chip CHP1.
- the boundary region between the flow rate detection unit FDU and the resin MR has a tapered shape TP1, and the angle of the tapered shape TP1 is gentler than the angle of the tapered shape TP2 shown in FIG.
- the adhesive ADH1 is provided so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1. It is premised on taking the composition to apply.
- the bottom of the chip mounting portion TAB1 below the diaphragm DF formed on the back surface of the semiconductor chip CHP1 is formed.
- the opening OP1 is formed, and the opening OP2 is provided in the resin MR that covers the back surface of the chip mounting portion TAB1 (fifth feature point).
- FIG. 24 is a plan view showing a mounting configuration of the flow sensor FS5 after the dam bar DM is removed. As shown in FIG. 24, it can be seen that by cutting the dam bar DM, a plurality of electric signals can be taken out independently from the plurality of leads LD1 and leads LD2.
- the flow sensor FS5 in the fifth embodiment is configured as described above, and the manufacturing method thereof will be described below with reference to FIGS. 25 to 28 show the manufacturing process in the cross section taken along line BB in FIG. 23 (a).
- a lead frame LF made of a copper material is prepared.
- a chip mounting portion TAB1 and a protruding lead PLD are integrally formed, and an opening OP1 is formed at the bottom of the chip mounting portion TAB1.
- the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1. Specifically, the semiconductor chip CHP1 is connected to the chip mounting portion TAB1 formed on the lead frame LF with an adhesive ADH1. At this time, the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 so that the diaphragm DF formed on the semiconductor chip CHP1 communicates with the opening OP1 formed at the bottom of the chip mounting portion TAB1.
- a flow rate detection unit FDU, wiring (not shown), and a control unit CU are formed by a normal semiconductor manufacturing process.
- the pad PD1 formed on the semiconductor chip CHP1 and the lead LD1 formed on the lead frame LF are connected by a wire W1 (wire bonding).
- the pad PD2 formed on the semiconductor chip CHP1 is connected to the lead LD2 by the wire W2.
- the wires W1 and W2 are formed from, for example, gold wires.
- the surface of the semiconductor chip CHP1 excluding the flow rate detection unit FDU and its vicinity is sealed with a resin MR (molding process).
- the lead frame LF on which the semiconductor chip CHP1 is mounted is sandwiched between the upper mold UM and the lower mold BM via the first space.
- the resin MR is poured into the first space using the plunger PJ, thereby sealing the surface of the semiconductor chip CHP1 excluding the flow rate detection unit FDU and the vicinity thereof with the resin MR.
- the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed can be fixed with a mold, the position of the semiconductor chip CHP1 is suppressed while suppressing the displacement of the semiconductor chip CHP1.
- a part can be sealed with the resin MR. This means that a part of the semiconductor chip CHP1 can be sealed with the resin MR while suppressing the displacement of each flow sensor according to the method of manufacturing the flow sensor in the fifth embodiment, and the semiconductor chip CHP1. It means that the variation in the position of the flow rate detection unit FDU formed in the above can be suppressed.
- the position of the flow rate detection unit FDU that detects the flow rate of gas can be matched by each flow rate sensor, so that variation in the performance of detecting the gas flow rate in each flow rate sensor can be suppressed. A remarkable effect can be obtained.
- the flow sensor manufacturing method according to the fifth embodiment is characterized in that the flow rate detection unit FDU formed in the semiconductor chip CHP1 is surrounded by the second space SP2 isolated from the first space.
- the lead frame LF on which the semiconductor chip CHP1 is mounted is sandwiched between the mold BM and the upper mold UM.
- the surface area of the other semiconductor chip CHP1 can be sealed while exposing the flow rate detection unit FDU formed in the semiconductor chip CHP1 and the vicinity thereof.
- the flow rate sensor manufacturing method is characterized in that when the lead frame LF mounted with the semiconductor chip CHP1 is sandwiched between the upper mold UM and the lower mold BM, the lead frame LF mounted with the semiconductor chip CHP1.
- the elastic film LAF is interposed between the upper mold UM and the upper mold UM.
- the elastic film LAF is soft when the lead frame LF mounting the semiconductor chip CHP1 is sandwiched between the upper mold UM and the lower mold BM.
- the dimension in the thickness direction of the elastic film LAF changes so as to absorb the thickness of the chip CHP1.
- the flow rate detection unit FDU or the thin diaphragm DF on the semiconductor chip CHP1 is used. There is a possibility that a problem of breakage occurs due to the addition of the clamp weight.
- a polymer material such as Teflon (registered trademark) or a fluororesin can be used.
- the flow sensor manufacturing method according to the fifth embodiment is characterized in that the insertion part IP1 formed in the lower mold BM is formed on the base part having a larger cross-sectional area than the insertion part. There is in point.
- the insertion portion of the insertion piece IP1 is inserted into the opening OP1, and the pedestal portion of the insertion piece IP1 comes into close contact with the bottom surface of the chip mounting portion TAB1.
- the pedestal part is firmly pressed against the back surface of the chip mounting part TAB1, so that the resin MR enters the opening OP1. It can be prevented.
- the lead frame LF on which the semiconductor chip CHP1 is mounted is removed from the upper mold UM and the lower mold BM.
- the flow sensor FS5 in the fifth embodiment can be manufactured.
- the opening OP1 is formed on the bottom surface of the chip mounting portion TAB1.
- An opening OP2 formed and communicating with the opening OP1 is formed in the resin MR.
- the opening OP2 is produced as a result of forming a pedestal on the insert piece IP1, and the cross-sectional area of the opening OP2 is larger than the cross-sectional area of the opening OP1.
- the internal space of the diaphragm DF flows through the opening OP1 formed in the bottom of the chip mounting portion TAB1 and the opening OP2 formed in the resin MR. It communicates with the external space of the sensor FS5.
- the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow rate sensor FS5 can be made equal, and stress can be suppressed from being applied to the diaphragm DF.
- FIG. 29 is a diagram illustrating a mounting configuration of the flow rate sensor FS6 according to the sixth embodiment, and is a diagram illustrating a configuration after sealing with resin.
- FIG. 29A is a plan view showing a mounting configuration of the flow rate sensor FS6 in the sixth embodiment.
- 29B is a cross-sectional view taken along the line AA in FIG. 29A
- FIG. 29C is a cross-sectional view taken along the line BB in FIG. 29A.
- the mounting configuration of the flow sensor FS6 in the sixth embodiment is the same as the mounting configuration of the flow sensor FS5 in the fifth embodiment, except that the airflow control units FCU1 and FCU2 are not provided. Therefore, the flow rate sensor FS6 in the sixth embodiment also has the first to second feature points and the fourth to sixth feature points described in the fifth embodiment.
- a polyimide film may be formed on the outermost surface (element formation surface) of the semiconductor chip CHP1 for the purpose of a stress buffering function with a resin to be bonded, a surface protection function, an insulation protection function, or the like. To do.
- a part of the semiconductor chip CHP1 can be sealed with the resin MR while suppressing the positional deviation of each flow sensor FS6. It means that the variation in the position of the formed flow rate detection unit FDU can be suppressed.
- the position of the flow rate detection unit FDU that detects the flow rate of gas can be matched by each flow rate sensor FS6, so that there is a performance variation in detecting the gas flow rate in each flow rate sensor FS6. The remarkable effect which can be suppressed can be acquired.
- the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU is the flow rate.
- the height of the surface of the semiconductor chip CHP1 including the detection unit FDU is higher (second feature point). That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
- Breakage of the chip CHP1 can be prevented. That is, the height of the resin MR sandwiching the flow rate detection unit FDU is higher than the height of the exposed flow rate detection unit FDU. For this reason, when the component comes into contact, first, it comes into contact with the high resin MR, so that the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
- the height of the resin MR (sealing body) is higher than the height of the surface of the semiconductor chip CHP1 including the flow rate detection unit FDU.
- (2A feature point) the flow of the air flowing above the flow rate detection unit FDU can be stabilized, and thereby the flow rate detection accuracy in the flow rate detection unit FDU can be improved. Details of the specific 2A feature points will be described in detail in a twelfth embodiment described later.
- the contact area between the semiconductor chip CHP1 and the resin MR increases in the cross section in the direction parallel to the air flow, and therefore, the separation of the interface between the semiconductor chip CHP1 and the resin MR can be prevented.
- the sixth embodiment it is possible to avoid the problem that the crack grows from the peeled portion and a large crack is generated, and to suppress the turbulence of the air above the flow rate detection unit FDU. Therefore, it is possible to improve the measurement accuracy of the accurate air flow rate in the flow rate detection unit FDU.
- the region has a taper shape, and the taper shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is a boundary parallel to the traveling direction of the gas. It is steeper than the tapered shape of the region (fourth feature point).
- the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
- the dimensional change of the flow path of the gas flowing in the Y direction can be reduced.
- difference of the flow measurement by the backflow or turbulent flow of gas can be suppressed.
- the angle of the tapered shape TP2 in the direction orthogonal to the gas flow direction (X direction) the wall of the gas flow path can be formed, and the gas flow in the X direction can be suppressed. it can.
- the adhesive ADH1 is applied so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1. It is premised on taking the composition to do.
- the bottom of the chip mounting portion TAB1 below the diaphragm DF formed on the back surface of the semiconductor chip CHP1 is formed.
- the opening OP1 is formed, and the opening OP2 is provided in the resin MR that covers the back surface of the chip mounting portion TAB1 (fifth feature point).
- the semiconductor chip CHP1 and the lead LD1 are connected by the wire W1
- the semiconductor chip CHP1 and the lead LD2 are connected by the wire W2 (sixth feature point).
- the flow rate sensor FS6 As described above, the flow rate sensor FS6 according to the sixth embodiment is mounted and configured. In the actual flow rate sensor FS6, after sealing with the resin MR, the dam bar DM constituting the outer frame body of the lead frame LF. Is removed.
- FIG. 30 is a plan view showing a mounting configuration of the flow sensor FS6 after the dam bar DM is removed. As shown in FIG. 30, it can be seen that by cutting the dam bar DM, a plurality of electrical signals can be taken out independently from the plurality of leads LD1 and leads LD2.
- FIG. 31 is a diagram showing a mounting configuration of the flow rate sensor FS7 according to the seventh embodiment.
- FIG. 31 (a) is a plan view showing the mounting configuration of the flow sensor FS7 in the seventh embodiment
- FIG. 31 (b) is a cross-sectional view taken along the line AA in FIG. 31 (a). It is.
- the mounting configuration of the flow sensor FS7 in the seventh embodiment shown in FIGS. 31 (a) and 31 (b) is the same as that of the flow sensor FS5 in the fifth embodiment shown in FIGS. 23 (a) to 23 (c). Since they are almost the same, different points will be described.
- a hole HL is formed in the vicinity of the flow rate detection unit FDU exposed from the resin MR. That is, the flow rate sensor FS7 in the seventh embodiment is characterized in that the hole HL is formed on the surface of the semiconductor chip exposed from the resin MR.
- the flow rate sensor FS7 in the seventh embodiment has a chip mounting portion TAB1 formed integrally with the protruding lead PLD.
- the opening OP1 is not formed in the chip mounting portion TAB1, and the opening OP2 is not formed in the resin MR covering the bottom surface of the chip mounting portion TAB1.
- the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 by the adhesive ADH1, and the diaphragm DF is formed on the back surface of the semiconductor chip CHP1.
- a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a control unit CU is formed on the lateral side of the flow rate detection unit FDU.
- the surface of the semiconductor chip CHP1 is covered with the resin MR while the flow rate detection unit FDU and the vicinity thereof are exposed. At this time, a hole HL is formed in the surface of the semiconductor chip CHP1 exposed from the resin MR.
- the hole HL is formed so as to penetrate from the surface of the semiconductor chip CHP1 to the diaphragm DF formed on the back surface of the semiconductor chip CHP1. Therefore, according to the flow rate sensor FS7 in the seventh embodiment, the inner space of the diaphragm DF and the outer space of the flow rate sensor FS7 communicate with each other through the hole HL. As a result, the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow rate sensor FS7 can be equalized, and stress can be suppressed from being applied to the diaphragm DF.
- the hole HL penetrating from the surface of the semiconductor chip CHP1 exposed from the resin MR to the back surface of the semiconductor chip CHP1 in which the diaphragm DF is formed is formed.
- the internal space of the diaphragm DF and the external space of the flow sensor FS7 are in communication with each other.
- the configuration example in which the hole HL is provided in the flow rate sensor FS5 in the fifth embodiment has been described.
- the technical idea in the seventh embodiment is not limited to this, for example, The present invention can also be applied to the flow rate sensors FS1 to FS4 and FS6 in the first to fourth and sixth embodiments.
- FIG. 32 is a diagram showing a mounting configuration of the flow sensor FS8 in the eighth embodiment.
- FIG. 32A is a plan view showing the mounting configuration of the flow rate sensor FS8 in the eighth embodiment
- FIG. 32B is a cross-sectional view taken along the line AA in FIG. It is.
- the mounting configuration of the flow rate sensor FS8 in the eighth embodiment shown in FIGS. 32 (a) and 32 (b) is the same as that of the flow rate sensor FS5 in the fifth embodiment shown in FIGS. 23 (a) to 23 (c). Since they are almost the same, different points will be described.
- a groove DIT is formed in the protruding lead PLD. That is, the flow rate sensor FS8 in the eighth embodiment is characterized in that the groove DIT is formed in the protruding lead PLD.
- the flow rate sensor FS8 in the eighth embodiment has a chip mounting portion TAB1 formed integrally with the protruding lead PLD.
- the opening OP1 is not formed in the chip mounting portion TAB1, and the opening OP2 is not formed in the resin MR covering the bottom surface of the chip mounting portion TAB1.
- the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 by the adhesive ADH1, and the diaphragm DF is formed on the back surface of the semiconductor chip CHP1.
- a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a control unit CU is formed on the lateral side of the flow rate detection unit FDU.
- the surface of the semiconductor chip CHP1 is covered with the resin MR while the flow rate detection unit FDU and the vicinity thereof are exposed.
- the groove DIT formed in the protruding lead PLD extends to the chip mounting portion TAB1, and reaches the chip mounting portion TAB1 below the region where the diaphragm DF is formed. . Therefore, according to the flow sensor FS8 in the eighth embodiment, the groove DIT allows the internal space of the diaphragm DF and the external space of the flow sensor FS8 to communicate with each other. As a result, the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow rate sensor FS8 can be made equal, and stress can be suppressed from being applied to the diaphragm DF.
- the groove DIT is formed from the projecting lead PLD to the chip mounting portion TAB1 below the region where the diaphragm DF is formed, so that the internal space of the diaphragm DF
- the feature is that the external space of the flow sensor FS8 is communicated.
- the configuration example in which the groove DIT is provided in the flow rate sensor FS5 in the fifth embodiment has been described.
- the technical idea in the eighth embodiment is not limited to this, for example, the above-described embodiment.
- the present invention can also be applied to the flow rate sensors FS1 to FS4 and FS6 in the first to fourth and sixth embodiments.
- FIG. 33 is a diagram illustrating a mounting configuration of the flow sensor module according to the ninth embodiment.
- FIG. 33 (a) is a plan view showing a mounting configuration of the flow sensor module FSM1 in the ninth embodiment.
- FIG. 33 (b) is a cross-sectional view taken along line AA in FIG. 33 (a)
- FIG. 33 (c) is a cross-sectional view taken along line BB in FIG. 33 (a). is there.
- the flow sensor module FSM1 in the ninth embodiment has a structure made of a resin MR2 having a rectangular shape, and is formed on the resin MR2 constituting this structure.
- a gas flow path PAS is formed by the groove formed.
- a flow sensor FS5 is embedded in the resin MR2 so as to communicate with the gas flow path part PAS.
- a part of the pair of air flow control units FCU1, FCU2, the flow rate detection unit FDU, and the wiring WL1A constituting the flow rate sensor FS5 is exposed from the resin MR2.
- the resin MR2 can be composed of, for example, a thermosetting resin such as an epoxy resin or a phenol resin, or a thermoplastic resin such as polycarbonate or polyethylene terephthalate. And you may comprise so that fillers, such as glass and mica, may be put in these resin.
- a thermosetting resin such as an epoxy resin or a phenol resin
- a thermoplastic resin such as polycarbonate or polyethylene terephthalate.
- fillers such as glass and mica
- the gas flows through the gas flow path part PAS along the direction of the arrow, and on the flow sensor FS5 provided to communicate with the gas flow path part PAS. Through the gas, and then the gas is discharged from an outlet (not shown).
- the flow rate sensor FS5 has an elongated shape in a direction parallel to the traveling direction of the gas flowing on the flow rate detection unit FDU with the exposed flow rate detection unit FDU interposed therebetween.
- a pair of airflow control units FCU1 and FCU2 are formed integrally with a resin MR (sealing body). Thereby, first, a pair of airflow control units FCU1 and FCU2 form passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU.
- the pair of air flow control units FCU1 and FCU2 are formed with high accuracy by being sandwiched by a mold having high dimensional accuracy integrally with the resin MR.
- the gas flow rate can be accurately measured without the gas flow being disturbed by the dimensional accuracy of the pair of air flow control units FCU1 and FCU2. Further, the pair of airflow control units FCU1 and FCU2 form passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU. For this reason, gas can be flowed to the upper part of flow volume detection part FDU in the state where the flow path size of gas was narrowed down. As a result, according to the flow sensor FS5, it is possible to suppress a decrease in the detection sensitivity of the gas flow rate even when the flow rate of the flowing gas is small.
- the flow sensor FS5 has a tapered boundary region between the flow rate detection unit FDU exposed from the resin MR (sealing body) and the resin MR (sealing body).
- the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is more than the tapered shape of the boundary region parallel to the traveling direction of the gas. It is steep. That is, the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
- FIG. 40 is a diagram showing a cross-sectional structure in the flow direction of air (gas) of the flow sensor manufactured by the manufacturing method of FIG.
- the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 by the adhesive ADH1, and the upper surface SUR (CHP) of the semiconductor chip CHP1 is exposed from the resin MR. That is, the flow rate detection unit FDU and the control unit CU formed on the upper surface SUR (CHP) of the semiconductor chip CHP1 are exposed from the resin MR, and the position of the upper surface SUR (CHP) of the semiconductor chip CHP1 is the upper surface of the resin MR. It is higher than the position of SUR (MR).
- FIG. 40 shows a state in which gas (air) is flowing from the left side to the right side of the drawing.
- the flow rate detection accuracy in the flow rate detection unit FDU can be improved. From the above, according to the flow rate sensor in the thirteenth embodiment, since the resin MR does not cover the semiconductor chip CHP1, the flow rate detection unit FDU is provided even when the semiconductor chip CHP1 is miniaturized. It can prevent being covered with the resin MR.
- the height dimension H1 from the upper surface SUR (CHP) of the semiconductor chip CHP1 to the upper surface SUR (MR2) of the resin MR and the exposed semiconductor in the cross section in the gas (air) flow direction It is desirable that the ratio of the chip CHP1 to the dimension L1 satisfies 0 ⁇ H1 / L1 ⁇ 1.5.
- the flow rate detection unit FDU exposed from the opening OP4 of the frame FR is moved from the upper mold UM. Can be protected. Thereafter, a sealing process is performed by injecting resin MR into the space formed in the mold. Thereby, it is possible to manufacture a flow sensor in which the upper surface SUR (MR) of the resin MR is higher than the upper surface SUR (CHP) of the semiconductor chip CHP1.
- MR upper surface SUR
- CHP upper surface SUR
- the height of the upper surface SUR (LR) of the downstream resin MR is lower than the height of the upper surface SUR (UR) of the upstream resin MR, and the semiconductor The structure may be higher than the upper surface SUR (CHP) of the chip CHP1.
- the height of the upper surface SUR (LR) of the downstream resin MR is the same as that of the upstream resin MR.
- a structure that is lower than the height of the upper surface SUR (LR) and has the same height as the semiconductor chip CHP1 may be employed.
- the upper surface SUR (UR2) of the upstream resin MR is lower than the upper surface SUR (CHP) of the semiconductor chip CHP1, but the first region Even in the structure in which the upper surface SUR (UR1) of the upstream resin MR is higher than the upper surface SUR (MR2) of the semiconductor chip CHP1 in the second region farther from the semiconductor chip CHP1 than the upper surface of the resin MR on the downstream side.
- a structure in which at least a part of the height of SUR (LR) is lower than the height of the upper surface SUR (UR1) of the upstream resin MR can be employed.
- the present invention is not limited to this, and a film such as a silicon nitride film (Si 3 N 4 ), a polysilicon film, a silicon oxide film (SiO 2 ) using TEOS (Si (OC 2 H 5 ) 4 ) as a raw material is used.
- a film such as a silicon nitride film (Si 3 N 4 ), a polysilicon film, a silicon oxide film (SiO 2 ) using TEOS (Si (OC 2 H 5 ) 4 ) as a raw material is used.
- a film such as a silicon nitride film (Si 3 N 4 ), a polysilicon film, a silicon oxide film (SiO 2 ) using TEOS (Si (OC 2 H 5 ) 4 ) as a raw material is used.
- SiO 2 silicon oxide film
- TEOS Si (OC 2 H 5 ) 4
- the silicon nitride film, the polysilicon film, and the silicon oxide film are formed by chemical vapor deposition, chemical vapor deposition, chemical vapor deposition, or physical vapor deposition, such as plasma CVD, low pressure CVD, and atmospheric pressure CVD. Alternatively, it can be formed by physical vapor deposition.
- These films formed on the semiconductor chip CHP1 prevent an increase in the silicon oxide film formed on the silicon (Si) constituting the semiconductor chip CHP1 and improve the adhesion between the resin MR and the semiconductor chip CHP1. be able to. These films may be formed on at least a part of the semiconductor chip CHP1 covered with the resin MR.
- the semiconductor chip CHP is mounted on the lead frame LF via the adhesive ADH.
- the present invention is not limited to this, and the semiconductor chip CHP is silver paste. It can also be mounted on the lead frame LF via a paste material such as. Further, a structure can be inserted between the semiconductor chip CHP and the lead frame LF, and the semiconductor chip CHP, the lead frame LF, and the structure can be joined using an adhesive ADH or a paste material. Components such as capacitors can be mounted on the LF.
- the present invention can be widely used in manufacturing industries for manufacturing semiconductor devices such as flow sensors.
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Abstract
Description
<流量センサの回路構成>
まず、流量センサの回路構成を説明する。図1は、本実施の形態1における流量センサの回路構成を示す回路ブロック図である。図1において、本実施の形態1における流量センサは、まず、流量センサを制御するためのCPU(Central Processing Unit)1を有し、さらに、このCPU1に入力信号を入力するための入力回路2、および、CPU1からの出力信号を出力するための出力回路3を有している。そして、流量センサにはデータを記憶するメモリ4が設けられており、CPU1は、メモリ4にアクセスして、メモリ4に記憶されているデータを参照できるようになっている。
本実施の形態1における流量センサは上記のように構成されており、以下に、その動作について図1を参照しながら説明する。まず、CPU1は、出力回路3を介してトランジスタTrのベース電極に出力信号(制御信号)を出力することにより、トランジスタTrに電流を流す。すると、トランジスタTrのコレクタ電極に接続されている電源PSから、トランジスタTrのエミッタ電極に接続されている発熱抵抗体HRに電流が流れる。このため、発熱抵抗体HRは発熱する。そして、発熱抵抗体HRからの発熱で暖められた気体がヒータ制御ブリッジHCBを構成する抵抗体R1を加熱する。このとき、発熱抵抗体HRで暖められた気体が一定温度(例えば、100℃)だけ高くなっている場合、ヒータ制御ブリッジHCBのノードAとノードBの差電位が0Vとなるように、抵抗体R1~R4の各抵抗値が設定されている。このため、例えば、発熱抵抗体HRで暖められた気体が一定温度(例えば、100℃)だけ高くなっている場合、ヒータ制御ブリッジHCBのノードAとノードBとの間の差電位は0Vとなり、この差電位(0V)が入力回路2を介してCPU1に入力される。そして、ヒータ制御ブリッジHCBからの差電位が0Vであることを認識したCPU1は、出力回路3を介してトランジスタTrのベース電極に、現状の電流量を維持するための出力信号(制御信号)を出力する。
次に、本実施の形態1における流量センサのレイアウト構成について説明する。例えば、図1に示す本実施の形態1における流量センサは、2つの半導体チップに形成される。具体的には、発熱抵抗体HR、ヒータ制御ブリッジHCBおよび温度センサブリッジTSBが1つの半導体チップに形成され、CPU1、入力回路2、出力回路3およびメモリ4などが別の半導体チップに形成される。以下では、発熱抵抗体HR、ヒータ制御ブリッジHCBおよび温度センサブリッジTSBが形成されている半導体チップのレイアウト構成について説明する。
図3は、従来技術における流量センサFSPの実装構成を示す図である。具体的に図3(a)は、従来技術における流量センサFSPの実装構成を示す平面図であり、図3(b)は、図3(a)のA-A線での断面図である。
以上のようにして、従来技術における流量センサFSPが実装構成されているが、従来の流量センサFSPでは、以下に示すような問題点がある。上述したように、半導体チップCHP1と配線基板WBとを接続する金線(ワイヤW1)は、変形による接触などを防止するため、通常、ポッティング樹脂POTによって固定されている。つまり、金線(ワイヤW1)は、ポッティング樹脂POTによって覆われて固定されており、このポッティング樹脂POTにより、金線(ワイヤW1)は保護されている。一方、流量センサFSPを構成する半導体チップCHP1および半導体チップCHP2は通常、ポッティング樹脂POTで封止されていない。すなわち、通常の流量センサFSPにおいては、金線(ワイヤW1)だけがポッティング樹脂POTで覆われた構造をしている。
そこで、本実施の形態1では、上述した従来技術の流量センサFSPに存在する性能バラツキという問題点を解決するために、流量センサの実装構成に工夫を施している。以下に、この工夫を施した本実施の形態1における流量センサの実装構成について、図面を参照しながら説明する。
本実施の形態1における流量センサFS1は上記のように構成されており、以下に、その製造方法について、図6~図10を参照しながら説明する。図6~図10は、図5(a)のA-A線で切断した断面における製造工程を示している。
前記実施の形態1では、露出している流量検出部FDUを挟み、流量検出部FDU上を流れる気体の進行方向と並行する方向に長尺形状を有する一対の気流制御部FCU1、FCU2を樹脂MR(封止体)と一体的に形成する例について説明した。本実施の形態2では、上述した気流制御部FCU1、FCU2を設けない流量センサについて説明する。
本実施の形態3では、上述した従来技術の流量センサFSPに存在する性能バラツキに基づく流量センサのFSPの性能劣化という問題点を解決するために、流量センサの実装構成に工夫を施している。以下に、この工夫を施した本実施の形態3における流量センサの実装構成について、図面を参照しながら説明する。
本実施の形態3における流量センサFS3は上記のように構成されており、以下に、その製造方法について、図15~図19を参照しながら説明する。図15~図19は、図13(a)のA-A線で切断した断面における製造工程を示している。
前記実施の形態3では、露出している流量検出部FDUを挟み、流量検出部FDU上を流れる気体の進行方向と並行する方向に長尺形状を有する一対の気流制御部FCU1、FCU2を樹脂MR(封止体)と一体的に形成する例について説明した。本実施の形態4では、上述した気流制御部FCU1、FCU2を設けない流量センサについて説明する。
前記実施の形態1~4における流量センサFS1~FS4では、流量検出部FDUを形成した半導体チップCHP1と、制御回路を形成した半導体チップCHP2を含むように構成していたが、本実施の形態5では、流量検出部と制御回路とを1つの半導体チップに形成した流量センサについて説明する。
本実施の形態5における流量センサFS5は上記のように構成されており、以下に、その製造方法について、図25~図28を参照しながら説明する。図25~図28は、図23(a)のB-B線で切断した断面における製造工程を示している。
前記実施の形態5では、露出している流量検出部FDUを挟み、流量検出部FDU上を流れる気体の進行方向と並行する方向に長尺形状を有する一対の気流制御部FCU1、FCU2を樹脂MR(封止体)と一体的に形成する例について説明した。本実施の形態6では、上述した気流制御部FCU1、FCU2を設けない流量センサについて説明する。
前記実施の形態1~2では、配線基板WBに開口部OP1を設けることにより、ダイヤフラムDFの内部空間と、流量センサFS1~FS2の外部空間とを連通させる構成について説明した。また、前記実施の形態3~6では、チップ搭載部TAB1に形成された開口部OP1と、樹脂MRに形成された開口部OP2を介して、ダイヤフラムDFの内部空間と、流量センサFS3~FS6の外部空間とを連通させる構成について説明した。本実施の形態7では、これらの手段とは異なる別の手段を用いることにより、ダイヤフラムの内部空間と流量センサの外部空間とを連通させる構造について説明する。
本実施の形態8では、ダイヤフラムの内部空間と、流量センサの外部空間とを連通させる別の構成例について説明する。
本実施の形態9では、流量センサを組み込んだ流量センサモジュールについて説明する。図33は、本実施の形態9における流量センサモジュールの実装構成を示す図である。特に、図33(a)は、本実施の形態9における流量センサモジュールFSM1の実装構成を示す平面図である。また、図33(b)は、図33(a)のA-A線で切断した断面図であり、図33(c)は、図33(a)のB-B線で切断した断面図である。
本実施の形態10では、前記実施の形態9で説明した流量センサモジュールFSM1の変形例について説明する。
本実施の形態11では、前記実施の形態9で説明した流量センサモジュールFSM1の変形例について説明する。
本願発明における流量センサの特徴の1つは、例えば、図13(c)、図20(c)、図23(c)あるいは図29(c)などに示すように、空気の流れと並行方向の断面において、樹脂MR(封止体)の高さが、流量検出部FDUを含む半導体チップCHP1の表面の高さよりも高くなっていることをにある(第2A特徴点)。これにより、流量検出部FDUの上方を流れる空気の流れを安定化することができ、これによって、流量検出部FDUにおける流量検出精度を向上させることができる。さらに、本願発明における流量センサでは、空気の流れと並行方向(Y方向)の断面において、半導体チップCHP1の上部を部分的に樹脂MRが覆う形状をしている(第2B特徴点)。このことから、空気の流れと並行方向の断面において、半導体チップCHP1と樹脂MRの接触面積が増えるため、半導体チップCHP1と樹脂MRとの界面の剥離を防止することができる。以上のように、本願発明における流量センサは、上述したように、第2A特徴点と第2B特徴点を備えているので、剥離部分からクラックが成長して大きな割れが発生する問題を回避することができるとともに、流量検出部FDUの上方での空気の乱れを抑制することができる結果、流量検出部FDUでの正確な空気流量の測定精度を向上させることができる。
前記実施の形態12では、空気の流れと並行方向の断面において、樹脂MR(封止体)の高さが、流量検出部FDUを含む半導体チップCHP1の表面の高さよりも高くなっており(第2A特徴点)、かつ、空気の流れと並行方向(Y方向)の断面において、半導体チップCHP1の上部を部分的に樹脂MRが覆う形状をしている(第2B特徴点)例について説明した。ところが、流量センサの小型・軽量化に対応して、半導体チップCHP1の寸法が小さくなる場合には、気体(空気)の流れ方向と並行な方向において、半導体チップCHP1の上部を部分的に樹脂MRで覆うと、流量検出部FDUまでも樹脂MRで覆われてしまうおそれがある。
本実施の形態14においては、空気の流れと並行方向の断面において、樹脂MR(封止体)の高さが、流量検出部FDUを含む半導体チップCHP1の表面の高さよりも高くなっており(第2A特徴点)、かつ、半導体チップCHP1上に開口部を有する枠体を搭載する例について説明する。
前記実施の形態3~6では、例えば、図13、図20、図23、図29に示すように、半導体チップCHP1に対して気体(空気)の流れ方向の上流側(Yプラス方向)の樹脂MRの上面SUR(MR)の高さと、気体(空気)の流れ方向の下流側(Yマイナス方向)の樹脂MRの上面SUR(MR)の高さがほぼ等しい形状について説明した。
2 入力回路
3 出力回路
4 メモリ
ADH 接着材
ADH1 接着材
ADH2 接着材
ADH3 接着材
BM 下金型
BMP バンプ電極
BR1 下流測温抵抗体
BR2 下流測温抵抗体
CAP カバー
CHP1 半導体チップ
CHP2 半導体チップ
CU 制御部
DF ダイヤフラム
DIT 溝
DM ダムバー
FCU1 気流制御部
FCU2 気流制御部
FDU 流量検出部
FR 枠体
FS1 流量センサ
FS2 流量センサ
FS3 流量センサ
FS4 流量センサ
FS5 流量センサ
FS6 流量センサ
FS7 流量センサ
FS8 流量センサ
FSM1 流量センサモジュール
FSM2 流量センサモジュール
FSM3 流量センサモジュール
FSP 流量センサ
HCB ヒータ制御ブリッジ
HL 孔
HR 発熱抵抗体
H1 寸法
IP1 入れ駒
IP2 入れ駒
IPU 入れ駒
LAF 弾性体フィルム
LC1 寸法
LD1 リード
LD2 リード
LF リードフレーム
LP 寸法
LR1 寸法
L1 寸法
MR 樹脂
MR2 樹脂
OP1 開口部
OP2 開口部
OP3 開口部
OP4 開口部
PAS 気体流路部
PD1 パッド
PD2 パッド
PD3 パッド
PJ プランジャ
PLD 突出リード
POT ポッティング樹脂
PS 電源
Q 気体流量
R1 抵抗体
R2 抵抗体
R3 抵抗体
R4 抵抗体
SP2 空間
SPC スペーサ
SUR(CHP) 上面
SUR(LR) 上面
SUR(MR) 上面
SUR(MR1) 上面
SUR(MR2) 上面
SUR(UR) 上面
SUR(UR1) 上面
SUR(UR2) 上面
TAB1 チップ搭載部
TAB2 チップ搭載部
TE1 端子
TE2 端子
TE3 端子
TH 貫通孔
TP1 テーパ形状
TP2 テーパ形状
TR 通路
Tr トランジスタ
TSB 温度センサブリッジ
UM 上金型
UR1 上流測温抵抗体
UR2 上流測温抵抗体
Vref1 参照電圧
Vref2 参照電圧
W1 ワイヤ
W2 ワイヤ
W3 ワイヤ
WB 配線基板
WL1 配線
WL1A 配線
WL1B 配線
WL2 配線
WL3 配線
WS1 側面
WS2 側面
Claims (68)
- (a)複数のパッドが形成された半導体チップを搭載するチップ搭載部と、
(b)前記チップ搭載部の外側に配置された複数のリードと、
(c)前記チップ搭載部上に配置された前記半導体チップと、
(d)前記複数のリードのそれぞれと前記半導体チップに形成されている前記複数のパッドのそれぞれとを接続する複数のワイヤとを備え、
前記半導体チップは、
(c1)半導体基板の主面上に形成された流量検出部と、
(c2)前記流量検出部を制御する制御回路部と、
(c3)前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記半導体チップに形成されている前記流量検出部を露出した状態で、前記チップ搭載部の一部、前記複数のリードのそれぞれの一部、前記半導体チップの一部、および、前記複数のワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、前記半導体チップの上部を部分的に前記樹脂が覆っていることを特徴とする流量センサ。 - 請求項1記載の流量センサであって、
前記半導体チップの最外表面の少なくとも一部に、ポリイミド膜が形成されていることを特徴とする流量センサ。 - 請求項1記載の流量センサであって、
露出している前記流量検出部を挟み、前記流量検出部上を流れる気体の進行方向と並行する方向に長尺形状を有する一対の気流制御部が前記封止体と一体的に形成されていることを特徴とする流量センサ。 - 請求項1記載の流量センサであって、
前記半導体チップの気体の進行方向と並行する方向において、前記半導体チップの上面から前記樹脂の上面までの高さ寸法をH1とし、前記樹脂から露出している前記半導体チップの寸法をL1とする場合、0<H1/L1≦1.5の関係を満たすことを特徴とする流量センサ。 - 請求項1記載の流量センサであって、
前記半導体チップの最外表面の少なくとも一部に、窒化シリコン膜、ポリシリコン膜、あるいは、酸化シリコン膜が形成されていることを特徴とする流量センサ。 - (a)複数の第1パッドが形成された第1半導体チップを搭載する第1チップ搭載部と、
(b)複数の第2パッドが形成された第2半導体チップを搭載する第2チップ搭載部と、
(c)前記第1チップ搭載部の外側に配置された複数の第1リードと、
(d)前記第2チップ搭載部の外側に配置された複数の第2リードと、
(e)前記第1チップ搭載部上に配置された前記第1半導体チップと、
(f)前記第2チップ搭載部上に配置された前記第2半導体チップと、
(g)前記複数の第1リードのそれぞれと前記第1半導体チップに形成されている前記複数の第1パッドのそれぞれとを接続する複数の第1ワイヤと、
(h)前記複数の第2リードのそれぞれと前記第2半導体チップに形成されている前記複数の第2パッドのそれぞれとを接続する複数の第2ワイヤとを備え、
前記第1半導体チップは、
(e1)第1半導体基板の主面上に形成された流量検出部と、
(e2)前記第1半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記第2半導体チップは、
(f1)第2半導体基板の主面上に形成され、前記流量検出部を制御する制御回路部を有し、
前記第1半導体チップに形成されている前記流量検出部を露出した状態で、前記第1チップ搭載部の一部、前記第2チップ搭載部、前記複数の第1リードのそれぞれの一部、前記複数の第2リードのそれぞれの一部、前記第1半導体チップの一部、前記第2半導体チップ、前記複数の第1ワイヤ、および、前記複数の第2ワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、前記第1半導体チップの上部を部分的に前記樹脂が覆っていることを特徴とする流量センサ。 - 請求項6記載の流量センサであって、
前記第1半導体チップの最外表面の少なくとも一部に、ポリイミド膜が形成されていることを特徴とする流量センサ。 - 請求項6記載の流量センサであって、
露出している前記流量検出部を挟み、前記流量検出部上を流れる気体の進行方向と並行する方向に長尺形状を有する一対の気流制御部が前記封止体と一体的に形成されていることを特徴とする流量センサ。 - 請求項6記載の流量センサであって、
前記第1半導体チップの気体の進行方向と並行する方向において、前記第1半導体チップの上面から前記樹脂の上面までの高さ寸法をH1とし、前記樹脂から露出している前記第1半導体チップの寸法をL1とする場合、0<H1/L1≦1.5の関係を満たすことを特徴とする流量センサ。 - 請求項6記載の流量センサであって、
前記半導体チップの最外表面の少なくとも一部に、窒化シリコン膜、ポリシリコン膜、あるいは、酸化シリコン膜が形成されていることを特徴とする流量センサ。 - (a)複数のパッドが形成された半導体チップを搭載するチップ搭載部と、
(b)前記チップ搭載部の外側に配置された複数のリードと、
(c)前記チップ搭載部上に配置された前記半導体チップと、
(d)前記複数のリードのそれぞれと前記半導体チップに形成されている前記複数のパッドのそれぞれとを接続する複数のワイヤとを備え、
前記半導体チップは、
(c1)半導体基板の主面上に形成された流量検出部と、
(c2)前記流量検出部を制御する制御回路部と、
(c3)前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有する流量センサであって、
前記半導体チップ上に搭載され、かつ、少なくとも前記流量検出部を露出する開口部を有し、かつ、樹脂成形品または金属プレス部品からなる枠体を備え、
前記半導体チップに形成されている前記流量検出部を前記枠体の前記開口部から露出した状態で、前記チップ搭載部の一部、前記複数のリードのそれぞれの一部、前記半導体チップの一部、および、前記複数のワイヤは、樹脂からなる封止体で封止されていることを特徴とする流量センサ。 - (a)複数の第1パッドが形成された第1半導体チップを搭載する第1チップ搭載部と、
(b)複数の第2パッドが形成された第2半導体チップを搭載する第2チップ搭載部と、
(c)前記第1チップ搭載部の外側に配置された複数の第1リードと、
(d)前記第2チップ搭載部の外側に配置された複数の第2リードと、
(e)前記第1チップ搭載部上に配置された前記第1半導体チップと、
(f)前記第2チップ搭載部上に配置された前記第2半導体チップと、
(g)前記複数の第1リードのそれぞれと前記第1半導体チップに形成されている前記複数の第1パッドのそれぞれとを接続する複数の第1ワイヤと、
(h)前記複数の第2リードのそれぞれと前記第2半導体チップに形成されている前記複数の第2パッドのそれぞれとを接続する複数の第2ワイヤとを備え、
前記第1半導体チップは、
(e1)第1半導体基板の主面上に形成された流量検出部と、
(e2)前記第1半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記第2半導体チップは、
(f1)第2半導体基板の主面上に形成され、前記流量検出部を制御する制御回路部を有しする流量センサであって、
前記第1半導体チップ上に搭載され、かつ、少なくとも前記流量検出部を露出する開口部を有し、かつ、樹脂成形品または金属プレス部品からなる枠体を備え、
前記第1半導体チップに形成されている前記流量検出部を前記枠体の前記開口部から露出した状態で、前記第1チップ搭載部の一部、前記第2チップ搭載部、前記複数の第1リードのそれぞれの一部、前記複数の第2リードのそれぞれの一部、前記第1半導体チップの一部、前記第2半導体チップ、前記複数の第1ワイヤ、および、前記複数の第2ワイヤは、樹脂からなる封止体で封止されていることを特徴とする流量センサ。 - 請求項11または請求項12記載の流量センサであって、
前記開口部を有する前記枠体と、前記半導体チップあるいは前記第1半導体チップとが接着されていることを特徴とする流量センサ。 - 請求項11または請求項12記載の流量センサであって、
前記開口部を有する前記枠体と、前記半導体チップあるいは前記第1半導体チップとが接着されていないことを特徴とする流量センサ。 - 請求項11または請求項12記載の流量センサであって、
前記開口部を有する前記枠体は、前記半導体チップの少なくとも1つの側面、あるいは、前記第1半導体チップの少なくとも1つの側面に平行な壁部を有することを特徴とする流量センサ。 - 請求項11記載の流量センサであって、
前記半導体チップの気体の進行方向と並行する方向において、前記半導体チップの上面から前記樹脂の上面までの高さ寸法をH1とし、前記樹脂から露出している前記半導体チップの寸法をL1とする場合、0<H1/L1≦1.5の関係を満たすことを特徴とする流量センサ。 - 請求項12記載の流量センサであって、
前記第1半導体チップの気体の進行方向と並行する方向において、前記第1半導体チップの上面から前記樹脂の上面までの高さ寸法をH1とし、前記樹脂から露出している前記第1半導体チップの寸法をL1とする場合、0<H1/L1≦1.5の関係を満たすことを特徴とする流量センサ。 - (a)複数のパッドが形成された半導体チップを搭載するチップ搭載部と、
(b)前記チップ搭載部の外側に配置された複数のリードと、
(c)前記チップ搭載部上に配置された前記半導体チップと、
(d)前記複数のリードのそれぞれと前記半導体チップに形成されている前記複数のパッドのそれぞれとを接続する複数のワイヤとを備え、
前記半導体チップは、
(c1)半導体基板の主面上に形成された流量検出部と、
(c2)前記流量検出部を制御する制御回路部と、
(c3)前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記半導体チップに形成されている前記流量検出部を露出した状態で、前記チップ搭載部の一部、前記複数のリードのそれぞれの一部、前記半導体チップの一部、および、前記複数のワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、前記半導体チップと接する第1領域では、前記半導体チップの上面よりも前記樹脂の上面が低く、かつ、前記第1領域よりも前記半導体チップから離れた第2領域の少なくとも一部においては、前記半導体チップの上面よりも前記樹脂の上面の高さが高いことを特徴とする流量センサ。 - (a)複数の第1パッドが形成された第1半導体チップを搭載する第1チップ搭載部と、
(b)複数の第2パッドが形成された第2半導体チップを搭載する第2チップ搭載部と、
(c)前記第1チップ搭載部の外側に配置された複数の第1リードと、
(d)前記第2チップ搭載部の外側に配置された複数の第2リードと、
(e)前記第1チップ搭載部上に配置された前記第1半導体チップと、
(f)前記第2チップ搭載部上に配置された前記第2半導体チップと、
(g)前記複数の第1リードのそれぞれと前記第1半導体チップに形成されている前記複数の第1パッドのそれぞれとを接続する複数の第1ワイヤと、
(h)前記複数の第2リードのそれぞれと前記第2半導体チップに形成されている前記複数の第2パッドのそれぞれとを接続する複数の第2ワイヤとを備え、
前記第1半導体チップは、
(e1)第1半導体基板の主面上に形成された流量検出部と、
(e2)前記第1半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記第2半導体チップは、
(f1)第2半導体基板の主面上に形成され、前記流量検出部を制御する制御回路部を有し、
前記第1半導体チップに形成されている前記流量検出部を露出した状態で、前記第1チップ搭載部の一部、前記第2チップ搭載部、前記複数の第1リードのそれぞれの一部、前記複数の第2リードのそれぞれの一部、前記第1半導体チップの一部、前記第2半導体チップ、前記複数の第1ワイヤ、および、前記複数の第2ワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、前記第1半導体チップと接する第1領域では、前記第1半導体チップの上面よりも前記樹脂の上面が低く、かつ、前記第1領域よりも前記第1半導体チップから離れた第2領域の少なくとも一部においては、前記半導体チップの上面よりも前記樹脂の上面の高さが高いことを特徴とする流量センサ。 - 請求項18または請求項19記載の流量センサであって、
前記半導体チップの側面の少なくとも一部、または、前記第1半導体チップの側面の少なくとも一部に、ポリイミド膜が形成されていることを特徴とする流量センサ。 - 請求項18または請求項19記載の流量センサであって、
前記半導体チップの側面の少なくとも一部、または、前記第1半導体チップの側面の少なくとも一部に、窒化シリコン膜、ポリシリコン膜、あるいは、酸化シリコン膜が形成されていることを特徴とする流量センサ。 - 請求項18または請求項19記載の流量センサであって、
露出している前記流量検出部を挟み、前記流量検出部上を流れる気体の進行方向と並行する方向に長尺形状を有する一対の気流制御部が前記封止体と一体的に形成されていることを特徴とする流量センサ。 - 請求項18記載の流量センサであって、
前記半導体チップの気体の進行方向と並行する方向において、前記半導体チップの上面から前記樹脂の上面までの高さ寸法をH1とし、前記樹脂から露出している前記半導体チップの寸法をL1とする場合、0<H1/L1≦1.5の関係を満たすことを特徴とする流量センサ。 - 請求項19記載の流量センサであって、
前記第1半導体チップの気体の進行方向と並行する方向において、前記第1半導体チップの上面から前記樹脂の上面までの高さ寸法をH1とし、前記樹脂から露出している前記第1半導体チップの寸法をL1とする場合、0<H1/L1≦1.5の関係を満たすことを特徴とする流量センサ。 - (a)リードフレームを用意する工程と、
(b)半導体基板の主面上に形成された流量検出部と、前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有する半導体チップを用意する工程と、
(c)前記リードフレーム上に前記半導体チップを搭載する工程と、
(d)前記(c)工程後、前記半導体チップと前記リードフレームとをワイヤで接続する工程と、
(e)前記(d)工程後、前記半導体チップに形成されている前記流量検出部を露出させつつ、前記半導体チップの一部を封止する工程と、を備え、
前記(e)工程は、
(e1)上金型の底面から突出する入れ駒を設置した前記上金型と、下金型とを用意する工程と、
(e2)前記(e1)工程後、前記半導体チップおよび前記リードフレームと、前記上金型および前記入れ駒と、の間に弾性体フィルムを介在させながら、空気の流れる方向において、前記入れ駒の先端寸法が、前記半導体チップの寸法よりも大きく、樹脂で形成される端部よりも小さい状態で前記半導体チップを前記入れ駒で固定しつつ、前記下金型と前記上金型で前記リードフレームを、第1空間を介して挟み込む工程と、
(e3)前記(e2)工程後、前記第1空間に前記樹脂を流し込む工程と、を有することを特徴とする流量センサの製造方法。 - (a)複数の第1パッドが形成された第1半導体チップを搭載する第1チップ搭載部と、
(b)複数の第2パッドが形成された第2半導体チップを搭載する第2チップ搭載部と、
(c)前記第1チップ搭載部の外側に配置された複数の第1リードと、
(d)前記第2チップ搭載部の外側に配置された複数の第2リードと、
(e)前記第1チップ搭載部上に配置された前記第1半導体チップと、
(f)前記第2チップ搭載部上に配置された前記第2半導体チップと、
(g)前記複数の第1リードのそれぞれと前記第1半導体チップに形成されている前記複数の第1パッドのそれぞれとを接続する複数の第1ワイヤと、
(h)前記複数の第2リードのそれぞれと前記第2半導体チップに形成されている前記複数の第2パッドのそれぞれとを接続する複数の第2ワイヤとを備え、
前記第1半導体チップは、
(e1)第1半導体基板の主面上に形成された流量検出部と、
(e2)前記第1半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記第2半導体チップは、
(f1)第2半導体基板の主面上に形成され、前記流量検出部を制御する制御回路部を有し、
前記第1半導体チップに形成されている前記流量検出部を露出した状態で、前記第1チップ搭載部の一部、前記第2チップ搭載部、前記複数の第1リードのそれぞれの一部、前記複数の第2リードのそれぞれの一部、前記第1半導体チップの一部、前記第2半導体チップ、前記複数の第1ワイヤ、および、前記複数の第2ワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、露出している前記第1半導体チップの上面を基準として、気体の流れる上流側の前記樹脂の上面が前記第1半導体チップの上面よりも高く、かつ、気体の流れる下流側の前記樹脂の上面の少なくとも一部が、気体の流れる上流側の前記樹脂の上面よりも低いことを特徴とする流量センサ。 - (a)複数のパッドが形成された半導体チップを搭載するチップ搭載部と、
(b)前記チップ搭載部の外側に配置された複数のリードと、
(c)前記チップ搭載部上に配置された前記半導体チップと、
(d)前記複数のリードのそれぞれと前記半導体チップに形成されている前記複数のパッドのそれぞれとを接続する複数のワイヤとを備え、
前記半導体チップは、
(c1)半導体基板の主面上に形成された流量検出部と、
(c2)前記流量検出部を制御する制御回路部と、
(c3)前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記半導体チップに形成されている前記流量検出部を露出した状態で、前記チップ搭載部の一部、前記複数のリードのそれぞれの一部、前記半導体チップの一部、および、前記複数のワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、露出している前記半導体チップの上面を基準として、気体の流れる上流側の前記樹脂の上面が前記半導体チップの上面よりも高く、かつ、気体の流れる下流側の前記樹脂の上面の少なくとも一部が、気体の流れる上流側の前記樹脂の上面よりも低いことを特徴とする流量センサ。 - 請求項26記載の流量センサであって、
前記第1半導体チップを基準として前記流量検出部上を流れる気体の進行方向の上流側において、前記第1半導体チップの上部を部分的に前記樹脂が覆っていることを特徴とする流量センサ。 - 請求項27記載の流量センサであって、
前記半導体チップを基準として前記流量検出部上を流れる気体の進行方向の上流側において、前記半導体チップの上部を部分的に前記樹脂が覆っていることを特徴とする流量センサ。 - 請求項26記載の流量センサであって、
前記第1半導体チップを基準として前記流量検出部上を流れる気体の進行方向の上流側における前記樹脂の上面が、前記第1半導体チップの上面よりも高く、
下流側における前記樹脂の上面が、前記第1半導体チップの上面よりも低いことを特徴とする流量センサ。 - 請求項27記載の流量センサであって、
前記半導体チップを基準として前記流量検出部上を流れる気体の進行方向の上流側における前記樹脂の上面が、前記半導体チップの上面よりも高く、
下流側における前記樹脂の上面が、前記半導体チップの上面よりも低いことを特徴とする流量センサ。 - 請求項26記載の流量センサであって、
前記第1半導体チップを基準として前記流量検出部上を流れる気体の進行方向の上流側における前記樹脂の上面が、前記第1半導体チップの上面よりも高く、
下流側における前記樹脂の上面が、前記第1半導体チップの上面よりも高く、かつ、上流側における前記樹脂の上面よりも低いことを特徴とする流量センサ。 - 請求項27記載の流量センサであって、
前記半導体チップを基準として前記流量検出部上を流れる気体の進行方向の上流側における前記樹脂の上面が、前記半導体チップの上面よりも高く、
下流側における前記樹脂の上面が、前記半導体チップの上面よりも高く、かつ、上流側における前記樹脂の上面よりも低いことを特徴とする流量センサ。 - 請求項26記載の流量センサであって、
前記第1半導体チップを基準として前記流量検出部上を流れる気体の進行方向の上流側における前記樹脂の上面が、前記第1半導体チップの上面よりも高く、
下流側における前記樹脂の上面が、前記第1半導体チップの上面と高さが等しいことを特徴とする流量センサ。 - 請求項27記載の流量センサであって、
前記半導体チップを基準として前記流量検出部上を流れる気体の進行方向の上流側における前記樹脂の上面が、前記半導体チップの上面よりも高く、
下流側における前記樹脂の上面が、前記半導体チップの上面と高さが等しいことを特徴とする流量センサ。 - 請求項26記載の流量センサであって、
前記第1半導体チップの気体の進行方向と並行する方向において、前記第1半導体チップの上面から前記樹脂の上面までの高さ寸法をH1とし、前記樹脂から露出している前記第1半導体チップの寸法をL1とする場合、0<H1/L1≦1.5の関係を満たすことを特徴とする流量センサ。 - 請求項27記載の流量センサであって、
前記半導体チップの気体の進行方向と並行する方向において、前記半導体チップの上面から前記樹脂の上面までの高さ寸法をH1とし、前記樹脂から露出している前記半導体チップの寸法をL1とする場合、0<H1/L1≦1.5の関係を満たすことを特徴とする流量センサ。 - 請求項26記載の流量センサであって、
前記樹脂で覆われる前記第1半導体チップの上面または側面の少なくとも一部に、ポリイミド膜が形成されていることを特徴とする流量センサ。 - 請求項26記載の流量センサであって、
前記樹脂で覆われる前記第1半導体チップの上面または側面の少なくとも一部に、窒化シリコン膜、ポリシリコン膜、あるいは、酸化シリコン膜が形成されていることを特徴とする流量センサ。 - 請求項27記載の流量センサであって、
前記樹脂で覆われる前記半導体チップの上面または側面の少なくとも一部に、ポリイミド膜が形成されていることを特徴とする流量センサ。 - 請求項27記載の流量センサであって、
前記樹脂で覆われる前記半導体チップの上面または側面の少なくとも一部に、窒化シリコン膜、ポリシリコン膜、あるいは、酸化シリコン膜が形成されていることを特徴とする流量センサ。 - 複数のパッドが形成された半導体チップを搭載するチップ搭載部と、
前記チップ搭載部の外側に配置された複数のリードと、
前記チップ搭載部上に配置された前記半導体チップと、
前記複数のリードのそれぞれと前記半導体チップに形成されている前記複数のパッドのそれぞれとを接続する複数のワイヤとを備え、
前記半導体チップは、
半導体基板の主面上に形成された流量検出部と、
前記流量検出部を制御する制御回路部と、
前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記半導体チップに形成されている前記流量検出部を露出した状態で、前記チップ搭載部の一部、前記複数のリードのそれぞれの一部、前記半導体チップの一部、および、前記複数のワイヤは、樹脂からなる封止体で封止されている流量センサの製造方法であって、
(a)リードフレームを用意する工程と、
(b)前記半導体基板の主面上に形成された前記流量検出部と、前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成された前記ダイヤフラムとを有する前記半導体チップを用意する工程と、
(c)前記リードフレーム上に前記半導体チップを搭載する工程と、
(d)前記(c)工程後、前記半導体チップと前記リードフレームとを前記複数のワイヤで接続する工程と、
(e)前記(d)工程後、前記半導体チップに形成されている前記流量検出部を露出させつつ、前記半導体チップの一部を封止する工程と、を備え、
前記(e)工程は、
(e1)底面に弾性体フィルムを密着させた上金型と、下金型とを用意する工程と、
(e2)前記(e1)工程後、前記流量検出部を囲む第2空間を形成しながら、前記弾性体フィルムを密着させた前記上金型と、前記下金型とで、前記半導体チップを搭載した前記リードフレームを、第1空間を介して挟み込む工程と、
(e3)前記(e2)工程後、前記第1空間に樹脂を流し込む工程と、を備えることを特徴とする流量センサの製造方法。 - 複数の第1パッドが形成された第1半導体チップを搭載する第1チップ搭載部と、
複数の第2パッドが形成された第2半導体チップを搭載する第2チップ搭載部と、
前記第1チップ搭載部の外側に配置された複数の第1リードと、
前記第2チップ搭載部の外側に配置された複数の第2リードと、
前記第1チップ搭載部上に配置された前記第1半導体チップと、
前記第2チップ搭載部上に配置された前記第2半導体チップと、
前記複数の第1リードのそれぞれと前記第1半導体チップに形成されている前記複数の第1パッドのそれぞれとを接続する複数の第1ワイヤと、
前記複数の第2リードのそれぞれと前記第2半導体チップに形成されている前記複数の第2パッドのそれぞれとを接続する複数の第2ワイヤとを備え、
前記第1半導体チップは、
第1半導体基板の主面上に形成された流量検出部と、
前記第1半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記第2半導体チップは、
第2半導体基板の主面上に形成され、前記流量検出部を制御する制御回路部を有し、
前記第1半導体チップに形成されている前記流量検出部を露出した状態で、前記第1チップ搭載部の一部、前記第2チップ搭載部、前記複数の第1リードのそれぞれの一部、前記複数の第2リードのそれぞれの一部、前記第1半導体チップの一部、前記第2半導体チップ、前記複数の第1ワイヤ、および、前記複数の第2ワイヤは、樹脂からなる封止体で封止されている流量センサの製造方法であって、
(a)リードフレームを用意する工程と、
(b)前記第1半導体基板の主面上に形成された前記流量検出部と、前記第1半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成された前記ダイヤフラムとを有する前記第1半導体チップを用意する工程と、
(c)前記リードフレーム上に前記第1半導体チップを搭載する工程と、
(d)前記(c)工程後、前記第1半導体チップと前記リードフレームとを前記複数のワイヤで接続する工程と、
(e)前記(d)工程後、前記第1半導体チップに形成されている前記流量検出部を露出させつつ、前記第1半導体チップの一部を封止する工程と、を備え、
前記(e)工程は、
(e1)底面に弾性体フィルムを密着させた上金型と、下金型とを用意する工程と、
(e2)前記(e1)工程後、前記流量検出部を囲む第2空間を形成しながら、前記弾性体フィルムを密着させた前記上金型と、前記下金型とで、前記第1半導体チップを搭載した前記リードフレームを、第1空間を介して挟み込む工程と、
(e3)前記(e2)工程後、前記第1空間に樹脂を流し込む工程と、を備えることを特徴とする流量センサの製造方法。 - (a)複数のパッドが形成された半導体チップを搭載するチップ搭載部と、
(b)前記チップ搭載部の外側に配置された複数のリードと、
(c)前記チップ搭載部上に配置された前記半導体チップと、
(d)前記複数のリードのそれぞれと前記半導体チップに形成されている前記複数のパッドのそれぞれとを接続する複数のワイヤとを備え、
前記半導体チップは、
(c1)半導体基板の主面上に形成された流量検出部と、
(c2)前記流量検出部を制御する制御回路部と、
(c3)前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記半導体チップに形成されている前記流量検出部を露出した状態で、前記チップ搭載部の一部、前記複数のリードのそれぞれの一部、前記半導体チップの一部、および、前記複数のワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部を挟み、前記流量検出部上を流れる気体の進行方向と並行する方向に長尺形状を有する一対の気流制御部が前記封止体と一体的に形成され、
前記封止体から露出している前記流量検出部と前記封止体との境界領域はテーパ形状をしており、前記境界領域のうち、前記流量検出部上を流れる前記気体の進行方向と直交する前記境界領域のテーパ形状は、前記気体の進行方向と並行する前記境界領域のテーパ形状よりも急峻であることを特徴とする流量センサ。 - 請求項44記載の流量センサであって、
前記半導体チップには、前記主面のうち露出している領域から前記半導体チップの前記裏面に形成されている前記ダイヤフラムへ達する貫通孔が形成されていることを特徴とする流量センサ。 - 請求項44記載の流量センサであって、
さらに、前記流量センサは、前記チップ搭載部と一体的に接続されて前記封止体の外部へ突出している突出リードを有し、
前記突出リードおよび前記チップ搭載部には、前記ダイヤフラムの内部空間と前記流量センサの外部にある外部空間とを繋ぐための溝が形成されていることを特徴とする流量センサ。 - 請求項44記載の流量センサであって、
前記半導体チップは、長方形の形状をしており、
前記半導体チップは、前記流量検出部上を流れる前記気体の進行方向と並行するように前記半導体チップの長辺が配置されていることを特徴とする流量センサ。 - 請求項47記載の流量センサであって、
前記半導体チップの長辺には、長辺方向に沿って前記複数のパッドが配置されており、前記複数のパッドのそれぞれと、前記複数のリードのそれぞれが、前記長辺を跨ぐように配置された前記複数のワイヤで接続されていることを特徴とする流量センサ。 - 請求項44記載の流量センサであって、
前記半導体チップと前記チップ搭載部とは、前記ダイヤフラムを囲むように形成された接着部材により接着されていることを特徴とする流量センサ。 - (a)複数のパッドが形成された半導体チップを搭載するチップ搭載部と、
(b)前記チップ搭載部の外側に配置された複数のリードと、
(c)前記チップ搭載部上に配置された前記半導体チップと、
(d)前記複数のリードのそれぞれと前記半導体チップに形成されている前記複数のパッドのそれぞれとを接続する複数のワイヤとを備え、
前記半導体チップは、
(c1)半導体基板の主面上に形成された流量検出部と、
(c2)前記流量検出部を制御する制御回路部と、
(c3)前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記半導体チップに形成されている前記流量検出部を露出した状態で、前記チップ搭載部の一部、前記複数のリードのそれぞれの一部、前記半導体チップの一部、および、前記複数のワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部を挟んだ両側における前記封止体の高さは、前記流量検出部を含む前記半導体チップの表面の高さよりも高いことを特徴とする流量センサ。 - 請求項50記載の流量センサであって、
前記封止体から露出している前記流量検出部と前記封止体との境界領域はテーパ形状をしており、前記境界領域のうち、前記流量検出部上を流れる前記気体の進行方向と直交する前記境界領域のテーパ形状は、前記気体の進行方向と並行する前記境界領域のテーパ形状よりも急峻であることを特徴とする流量センサ。 - (a)複数の第1パッドが形成された第1半導体チップを搭載する第1チップ搭載部と、
(b)複数の第2パッドが形成された第2半導体チップを搭載する第2チップ搭載部と、
(c)前記第1チップ搭載部の外側に配置された複数の第1リードと、
(d)前記第2チップ搭載部の外側に配置された複数の第2リードと、
(e)前記第1チップ搭載部上に配置された前記第1半導体チップと、
(f)前記第2チップ搭載部上に配置された前記第2半導体チップと、
(g)前記複数の第1リードのそれぞれと前記第1半導体チップに形成されている前記複数の第1パッドのそれぞれとを接続する複数の第1ワイヤと、
(h)前記複数の第2リードのそれぞれと前記第2半導体チップに形成されている前記複数の第2パッドのそれぞれとを接続する複数の第2ワイヤとを備え、
前記第1半導体チップは、
(e1)第1半導体基板の主面上に形成された流量検出部と、
(e2)前記第1半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記第2半導体チップは、
(f1)第2半導体基板の主面上に形成され、前記流量検出部を制御する制御回路部を有し、
前記第1半導体チップに形成されている前記流量検出部を露出した状態で、前記第1チップ搭載部の一部、前記第2チップ搭載部、前記複数の第1リードのそれぞれの一部、前記複数の第2リードのそれぞれの一部、前記第1半導体チップの一部、前記第2半導体チップ、前記複数の第1ワイヤ、および、前記複数の第2ワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部を挟み、前記流量検出部上を流れる気体の進行方向と並行する方向に長尺形状を有する一対の気流制御部が前記封止体と一体的に形成され、
前記封止体から露出している前記流量検出部と前記封止体との境界領域はテーパ形状をしており、前記境界領域のうち、前記流量検出部上を流れる前記気体の進行方向と直交する前記境界領域のテーパ形状は、前記気体の進行方向と並行する前記境界領域のテーパ形状よりも急峻であることを特徴とする流量センサ。 - 請求項52記載の流量センサであって、
前記第1半導体チップと前記第1チップ搭載部とは、前記ダイヤフラムを囲むように形成された接着部材により接着されていることを特徴とする流量センサ。 - (a)複数の第1パッドが形成された第1半導体チップを搭載する第1チップ搭載部と、
(b)複数の第2パッドが形成された第2半導体チップを搭載する第2チップ搭載部と、
(c)前記第1チップ搭載部の外側に配置された複数の第1リードと、
(d)前記第2チップ搭載部の外側に配置された複数の第2リードと、
(e)前記第1チップ搭載部上に配置された前記第1半導体チップと、
(f)前記第2チップ搭載部上に配置された前記第2半導体チップと、
(g)前記複数の第1リードのそれぞれと前記第1半導体チップに形成されている前記複数の第1パッドのそれぞれとを接続する複数の第1ワイヤと、
(h)前記複数の第2リードのそれぞれと前記第2半導体チップに形成されている前記複数の第2パッドのそれぞれとを接続する複数の第2ワイヤとを備え、
前記第1半導体チップは、
(e1)第1半導体基板の主面上に形成された流量検出部と、
(e2)前記第1半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記第2半導体チップは、
(f1)第2半導体基板の主面上に形成され、前記流量検出部を制御する制御回路部を有し、
前記第1半導体チップに形成されている前記流量検出部を露出した状態で、前記第1チップ搭載部の一部、前記第2チップ搭載部、前記複数の第1リードのそれぞれの一部、前記複数の第2リードのそれぞれの一部、前記第1半導体チップの一部、前記第2半導体チップ、前記複数の第1ワイヤ、および、前記複数の第2ワイヤは、樹脂からなる封止体で封止されている流量センサであって、
露出している前記流量検出部を挟んだ両側における前記封止体の高さは、前記流量検出部を含む前記第1半導体チップの表面の高さよりも高いことを特徴とする流量センサ。 - 請求項54記載の流量センサであって、
前記封止体から露出している前記流量検出部と前記封止体との境界領域はテーパ形状をしており、前記境界領域のうち、前記流量検出部上を流れる前記気体の進行方向と直交する前記境界領域のテーパ形状は、前記気体の進行方向と並行する前記境界領域のテーパ形状よりも急峻であることを特徴とする流量センサ。 - 請求項54記載の流量センサであって、
前記第1チップ搭載部には、前記ダイヤフラムと平面的に見て重なる位置に第1開口部が形成され、かつ、前記封止体の裏面には、前記ダイヤフラムと平面的に見て重なる位置に第2開口部が形成されており、
前記第1開口部と前記第2開口部は互いに連通するように配置され、前記第1開口部の断面積は、前記第2開口部の断面積よりも小さいことを特徴とする流量センサ。 - (a)第1開口部を形成したリードフレームを用意する工程と、
(b)半導体基板の主面上に形成された流量検出部と、前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有する半導体チップを用意する工程と、
(c)前記半導体チップに形成されている前記ダイヤフラムと、前記リードフレームに形成されている前記第1開口部が平面的に見て重なるように、前記リードフレーム上に前記半導体チップを搭載する工程と、
(d)前記(c)工程後、前記半導体チップと前記リードフレームとをワイヤで接続する工程と、
(e)前記(d)工程後、前記半導体チップに形成されている前記流量検出部を露出させつつ、前記半導体チップの一部を封止する工程とを備え、
前記(e)工程は、
(e1)上金型を用意するとともに、第1突起部と、前記第1突起部上に形成され、前記第1突起部の断面積よりも小さい断面積を有する第2突起部とを形成した下金型を用意する工程と、
(e2)前記(e1)工程後、前記下金型に形成されている前記第2突起部を前記リードフレームに形成されている前記第1開口部に挿入し、かつ、前記第1突起部を前記リードフレームに押し当てながら、前記下金型と前記上金型で、前記半導体チップを搭載した前記リードフレームを、第1空間を介して挟みこむ工程と、
(e3)前記(e2)工程後、前記第1空間に樹脂を流し込む工程とを有することを特徴とする流量センサの製造方法。 - 請求項57記載の流量センサの製造方法であって、
前記半導体チップに形成されている前記流量検出部を前記第1空間とは隔離された第2空間で囲まれるように、前記下金型と前記上金型で、前記半導体チップを搭載した前記リードフレームを挟み込むことにより、前記半導体チップに形成されている前記流量検出部を露出させつつ、前記半導体チップの一部を封止することを特徴とする流量センサの製造方法。 - 請求項57記載の流量センサの製造方法であって、
前記半導体チップを搭載した前記リードフレームを、前記上金型と前記下金型で挟み込む際、前記半導体チップを搭載した前記リードフレームと前記上金型との間に弾性体フィルムを介在させることを特徴とする流量センサの製造方法。 - (a)開口部を形成した基板を用意する工程と、
(b)半導体基板の主面上に形成された流量検出部と、前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有する半導体チップを用意する工程と、
(c)前記半導体チップに形成されている前記ダイヤフラムと、前記基板に形成されている前記開口部が平面的に見て重なるように、前記基板上に前記半導体チップを搭載する工程と、
(d)前記(c)工程後、前記半導体チップと前記基板とをワイヤで接続する工程と、
(e)前記(d)工程後、前記半導体チップに形成されている前記流量検出部を露出させつつ、前記半導体チップの一部を封止する工程とを備え、
前記(e)工程は、
(e1)上金型と下金型とを用意する工程と、
(e2)前記(e1)工程後、前記下金型と前記上金型で、前記半導体チップを搭載した前記基板を、第1空間を介して挟みこむ工程と、
(e3)前記(e2)工程後、前記第1空間に樹脂を流し込む工程とを有し、
前記半導体チップに形成されている前記流量検出部を前記第1空間とは隔離された第2空間で囲まれるように、前記下金型と前記上金型で、前記半導体チップを搭載した前記基板を挟み込むことにより、前記半導体チップに形成されている前記流量検出部を露出させつつ、前記半導体チップの一部を封止することを特徴とする流量センサの製造方法。 - 請求項60記載の流量センサの製造方法であって、
前記半導体チップを搭載した前記基板を、前記上金型と前記下金型で挟み込む際、前記半導体チップを搭載した前記基板と前記上金型との間に弾性体フィルムを介在させることを特徴とする流量センサの製造方法。 - (a)半導体基板の主面上に形成された流量検出部と、前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有する半導体チップを、前記流量検出部を露出させつつ、第1樹脂で封止した流量センサと、
(b)前記流量センサの前記流量検出部へ気体を誘導する流路部とを備える流量センサモジュールであって、
前記流量センサモジュールは、前記流量センサを封止している前記第1樹脂のさらに外側を覆うように形成され、かつ、前記流量検出部を露出するように形成された第2樹脂を有し、
前記流路部は、前記流量センサの前記流量検出部と繋がるように形成されており、前記気体が前記流路部を通って前記流量センサの前記流量検出部へ誘導されるように構成されていることを特徴とする流量センサモジュール。 - 請求項62記載の流量センサモジュールであって、
前記流量センサを構成する前記半導体チップは基板上に搭載され、
前記基板には、前記半導体チップに形成されている前記ダイヤフラムと平面的に見て重なる領域に開口部が形成されていることを特徴とする流量センサモジュール。 - 請求項63記載の流量センサモジュールであって、
さらに、前記基板の裏面は、前記開口部と連通する第3開口部が形成された前記第2樹脂で覆われており、
前記基板に形成された前記開口部の断面積は、前記第2樹脂に形成されている前記第3開口部の断面積よりも小さいことを特徴とする流量センサモジュール。 - 請求項62記載の流量センサモジュールであって、
前記流量センサを構成する前記半導体チップはチップ搭載部上に搭載され、
前記チップ搭載部には、前記半導体チップに形成されている前記ダイヤフラムと平面的に見て重なる領域に第1開口部が形成されており、
さらに、前記チップ搭載部の裏面は、前記第1開口部と連通する第2開口部が形成された前記第1樹脂で覆われており、
前記チップ搭載部に形成された前記第1開口部の断面積は、前記第1樹脂に形成されている前記第2開口部の断面積よりも小さいことを特徴とする流量センサモジュール。 - 請求項65記載の流量センサモジュールであって、
さらに、前記第2開口部が形成された前記第1樹脂の裏面は、前記第2開口部と連通する第3開口部が形成された前記第2樹脂で覆われており、
前記第1樹脂に形成されている前記第2開口部の断面積は、前記第2樹脂に形成されている前記第3開口部の断面積よりも小さいことを特徴とする流量センサモジュール。 - (a)半導体基板の主面上に形成された流量検出部と、前記半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有する半導体チップを、前記流量検出部を露出させつつ、第1樹脂で封止した流量センサを用意する工程と、
(b)前記(a)工程後、前記流量センサに形成されている前記流量検出部を露出させつつ、前記流量センサの一部を封止する工程とを備え、
前記(b)工程は、
(b1)上金型と下金型を用意する工程と、
(b2)前記(b1)工程後、前記下金型と前記上金型で、前記流量センサを、第1空間を介して挟みこむ工程と、
(b3)前記(b2)工程後、前記第1空間に第2樹脂を流し込む工程とを有する流量センサモジュールの製造方法であって、
前記流量センサに形成されている前記流量検出部を前記第1空間とは隔離された第2空間で囲まれるように、前記下金型と前記上金型で、前記流量センサを挟み込むことにより、前記流量センサに形成されている前記流量検出部を露出させつつ、前記流量センサの一部を前記第2樹脂で封止することを特徴とする流量センサモジュールの製造方法。 - 請求項67記載の流量センサモジュールの製造方法であって、
前記(a)工程で用意する前記流量センサには、前記第1樹脂から突出した突出リードが形成されており、
前記(a)工程後、前記(b)工程前に、前記突出リードを折り曲げ加工する工程を有し、
前記(b2)工程は、前記下金型と前記上金型で、前記流量センサを、第1空間を介して挟みこむ際、前記折り曲げ加工した前記突出リードを、前記下金型および前記上金型からなる金型内での前記流量センサの位置決めに使用することを特徴とする流量センサモジュールの製造方法。
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EP3944304A1 (en) * | 2020-07-20 | 2022-01-26 | Nexperia B.V. | A semiconductor device and a method of manufacture |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01301120A (ja) * | 1988-05-30 | 1989-12-05 | Mitsubishi Electric Corp | 半導体流速センサ |
JPH07174599A (ja) * | 1991-12-09 | 1995-07-14 | Mitsubishi Electric Corp | 半導体センサー装置およびその製造方法 |
JP2000031309A (ja) | 1998-05-12 | 2000-01-28 | Hyundai Electron Ind Co Ltd | チップスタックパッケ―ジ |
JP2004074713A (ja) | 2002-08-21 | 2004-03-11 | Hitachi Chem Co Ltd | 半導体モールド用離型シート |
JP2004361271A (ja) * | 2003-06-05 | 2004-12-24 | Hitachi Ltd | 熱式空気流量計 |
JP2008020193A (ja) * | 2006-07-10 | 2008-01-31 | Mitsubishi Electric Corp | 熱式流量センサ |
JP2008157742A (ja) | 2006-12-22 | 2008-07-10 | Denso Corp | 半導体装置 |
JP2008175780A (ja) | 2007-01-22 | 2008-07-31 | Denso Corp | 熱式流量センサ |
JP2009031067A (ja) | 2007-07-25 | 2009-02-12 | Denso Corp | センサ装置 |
JP2009036639A (ja) | 2007-08-01 | 2009-02-19 | Denso Corp | センサ装置 |
JP2009058230A (ja) * | 2007-08-29 | 2009-03-19 | Denso Corp | センサ装置の製造方法及びセンサ装置 |
JP2010112804A (ja) * | 2008-11-05 | 2010-05-20 | Denso Corp | 熱式フローセンサの製造方法及び熱式フローセンサ |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04258176A (ja) * | 1991-02-12 | 1992-09-14 | Mitsubishi Electric Corp | 半導体圧力センサ |
JPH06265384A (ja) * | 1993-03-15 | 1994-09-20 | Hitachi Ltd | 熱式空気流量計 |
JP3019784B2 (ja) * | 1996-09-04 | 2000-03-13 | サンケン電気株式会社 | 流体の流れ検出装置 |
JP3328547B2 (ja) * | 1997-06-16 | 2002-09-24 | 株式会社日立製作所 | 熱式空気流量センサ |
DE19741031A1 (de) * | 1997-09-18 | 1999-03-25 | Bosch Gmbh Robert | Vorrichtung zur Messung der Masse eines strömenden Mediums |
JP2000002572A (ja) * | 1998-06-15 | 2000-01-07 | Unisia Jecs Corp | 気体流量計測装置 |
JP3610484B2 (ja) * | 1999-08-10 | 2005-01-12 | 株式会社日立製作所 | 熱式空気流量計 |
DE10002435A1 (de) * | 2000-01-21 | 2001-07-26 | Bosch Gmbh Robert | Sensorvorrichtung |
JP3577269B2 (ja) * | 2000-08-30 | 2004-10-13 | 株式会社日立製作所 | 熱式空気流量センサおよびその形成方法 |
JP3709339B2 (ja) * | 2000-12-05 | 2005-10-26 | 株式会社日立製作所 | 流量計測装置 |
JP3785319B2 (ja) * | 2000-12-11 | 2006-06-14 | 株式会社日立製作所 | 流量計測装置 |
JP2003090750A (ja) * | 2001-09-19 | 2003-03-28 | Ngk Spark Plug Co Ltd | 流量及び流速測定装置 |
JP2003240614A (ja) * | 2002-02-21 | 2003-08-27 | Denso Corp | 流量測定装置 |
JP2003254805A (ja) | 2002-03-07 | 2003-09-10 | Hitachi Ltd | 熱式流量センサおよび光供給方法 |
JP3845615B2 (ja) | 2002-03-12 | 2006-11-15 | アドバンス電気工業株式会社 | 流量センサー |
JPWO2004023126A1 (ja) * | 2002-09-03 | 2005-12-22 | 日本特殊陶業株式会社 | シリコン製マイクロセンサの実装方法、製造方法およびシリコン製マイクロセンサ |
JP2005172526A (ja) * | 2003-12-09 | 2005-06-30 | Denso Corp | 流量測定装置およびその製造方法 |
JP4609019B2 (ja) * | 2004-09-24 | 2011-01-12 | 株式会社デンソー | 熱式流量センサ及びその製造方法 |
US7198981B2 (en) * | 2004-10-21 | 2007-04-03 | Honeywell International Inc. | Vacuum sealed surface acoustic wave pressure sensor |
US7546772B2 (en) * | 2004-12-30 | 2009-06-16 | Honeywell International Inc. | Piezoresistive pressure sensor |
JP5067648B2 (ja) | 2005-03-10 | 2012-11-07 | 光照 木村 | 加熱ダイオード温度測定装置とこれを用いた赤外線温度測定装置および流量測定装置ならびに流量センシング部の製作方法 |
JP4975972B2 (ja) * | 2005-03-15 | 2012-07-11 | 日立オートモティブシステムズ株式会社 | 物理量センサ |
KR20070116097A (ko) * | 2005-03-16 | 2007-12-06 | 야마하 가부시키가이샤 | 반도체 장치, 반도체 장치의 제조 방법, 및 덮개 프레임 |
DE102005016449A1 (de) * | 2005-04-11 | 2006-10-12 | Robert Bosch Gmbh | Beheizter Heißfilmluftmassenmesser |
DE102005038598A1 (de) * | 2005-08-16 | 2007-02-22 | Robert Bosch Gmbh | Heißfilmluftmassenmesser mit Strömungsablösungselement |
JP4674529B2 (ja) * | 2005-11-07 | 2011-04-20 | 株式会社デンソー | 湿度センサ装置及びその製造方法 |
EP1795496A2 (en) * | 2005-12-08 | 2007-06-13 | Yamaha Corporation | Semiconductor device for detecting pressure variations |
JP4317556B2 (ja) * | 2006-07-21 | 2009-08-19 | 株式会社日立製作所 | 熱式流量センサ |
DE112006004083T5 (de) * | 2006-10-18 | 2009-11-26 | Sensirion Holding Ag | Verfahren zum Verpacken integrierter Sensoren |
JP2008224358A (ja) * | 2007-03-12 | 2008-09-25 | Konica Minolta Holdings Inc | 熱式流量センサ及び流量計測装置 |
US7472608B2 (en) * | 2007-04-04 | 2009-01-06 | Rosemount Inc. | Flangeless differential pressure transmitter for industrial process control systems |
JP2009025098A (ja) * | 2007-07-18 | 2009-02-05 | Star Micronics Co Ltd | 熱式流量センサ |
US8256285B2 (en) * | 2007-08-21 | 2012-09-04 | BELIMO Holding, AG | Flow sensor including a base member with a resilient region forming a flow channel and a cover member covering the flow channel |
JP4450031B2 (ja) * | 2007-08-22 | 2010-04-14 | 株式会社デンソー | 半導体部品 |
JP5183164B2 (ja) * | 2007-11-19 | 2013-04-17 | 日立オートモティブシステムズ株式会社 | 流量測定装置 |
DE102008011943B4 (de) * | 2008-02-29 | 2012-04-26 | Robert Bosch Gmbh | Sensoranordnung zur Differenzdruckmessung |
JP2010197144A (ja) * | 2009-02-24 | 2010-09-09 | Denso Corp | エアフローメータ |
JP5293278B2 (ja) * | 2009-03-05 | 2013-09-18 | 株式会社デンソー | 熱式流量計 |
WO2012049742A1 (ja) * | 2010-10-13 | 2012-04-19 | 日立オートモティブシステムズ株式会社 | 流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法 |
-
2010
- 2010-10-13 WO PCT/JP2010/067946 patent/WO2012049742A1/ja active Application Filing
-
2011
- 2011-09-13 MX MX2015001324A patent/MX349742B/es unknown
- 2011-09-13 WO PCT/JP2011/070900 patent/WO2012049934A1/ja active Application Filing
- 2011-09-13 KR KR1020147003025A patent/KR101414755B1/ko active IP Right Grant
- 2011-09-13 CN CN201410244748.6A patent/CN103994794B/zh active Active
- 2011-09-13 KR KR1020127005443A patent/KR101444867B1/ko active IP Right Grant
- 2011-09-13 US US13/393,155 patent/US8640538B2/en active Active
- 2011-09-13 EP EP18175855.8A patent/EP3421949B1/en active Active
- 2011-09-13 CN CN201180003582.3A patent/CN102575955B/zh active Active
- 2011-09-13 CN CN201510757388.4A patent/CN105486364B/zh active Active
- 2011-09-13 EP EP11818969.5A patent/EP2629065A4/en not_active Withdrawn
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- 2011-09-13 CN CN201510757401.6A patent/CN105333913B/zh active Active
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-
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- 2012-03-19 JP JP2012062473A patent/JP5456816B2/ja active Active
-
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- 2013-12-30 US US14/143,553 patent/US9222813B2/en active Active
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-
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Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01301120A (ja) * | 1988-05-30 | 1989-12-05 | Mitsubishi Electric Corp | 半導体流速センサ |
JPH07174599A (ja) * | 1991-12-09 | 1995-07-14 | Mitsubishi Electric Corp | 半導体センサー装置およびその製造方法 |
JP2000031309A (ja) | 1998-05-12 | 2000-01-28 | Hyundai Electron Ind Co Ltd | チップスタックパッケ―ジ |
JP2004074713A (ja) | 2002-08-21 | 2004-03-11 | Hitachi Chem Co Ltd | 半導体モールド用離型シート |
JP2004361271A (ja) * | 2003-06-05 | 2004-12-24 | Hitachi Ltd | 熱式空気流量計 |
JP2008020193A (ja) * | 2006-07-10 | 2008-01-31 | Mitsubishi Electric Corp | 熱式流量センサ |
JP2008157742A (ja) | 2006-12-22 | 2008-07-10 | Denso Corp | 半導体装置 |
JP2008175780A (ja) | 2007-01-22 | 2008-07-31 | Denso Corp | 熱式流量センサ |
JP2009031067A (ja) | 2007-07-25 | 2009-02-12 | Denso Corp | センサ装置 |
JP2009036639A (ja) | 2007-08-01 | 2009-02-19 | Denso Corp | センサ装置 |
JP2009058230A (ja) * | 2007-08-29 | 2009-03-19 | Denso Corp | センサ装置の製造方法及びセンサ装置 |
JP2010112804A (ja) * | 2008-11-05 | 2010-05-20 | Denso Corp | 熱式フローセンサの製造方法及び熱式フローセンサ |
Non-Patent Citations (1)
Title |
---|
See also references of EP2629065A4 |
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