JP5965706B2 - 流量センサの製造方法 - Google Patents
流量センサの製造方法 Download PDFInfo
- Publication number
- JP5965706B2 JP5965706B2 JP2012091288A JP2012091288A JP5965706B2 JP 5965706 B2 JP5965706 B2 JP 5965706B2 JP 2012091288 A JP2012091288 A JP 2012091288A JP 2012091288 A JP2012091288 A JP 2012091288A JP 5965706 B2 JP5965706 B2 JP 5965706B2
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- semiconductor chip
- flow rate
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- 238000004519 manufacturing process Methods 0.000 title claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 365
- 229920005989 resin Polymers 0.000 claims description 199
- 239000011347 resin Substances 0.000 claims description 199
- 238000007789 sealing Methods 0.000 claims description 167
- 238000001514 detection method Methods 0.000 claims description 87
- 238000000034 method Methods 0.000 claims description 50
- 238000003780 insertion Methods 0.000 claims description 44
- 230000037431 insertion Effects 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 238000003825 pressing Methods 0.000 claims description 3
- JPKJQBJPBRLVTM-OSLIGDBKSA-N (2s)-2-amino-n-[(2s,3r)-3-hydroxy-1-[[(2s)-1-[[(2s)-1-[[(2s)-1-[[(2r)-1-(1h-indol-3-yl)-3-oxopropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-1-oxobutan-2-yl]-6-iminohexanamide Chemical compound C([C@H](NC(=O)[C@@H](NC(=O)[C@@H](N)CCCC=N)[C@H](O)C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@H](CC=1C2=CC=CC=C2NC=1)C=O)C1=CC=CC=C1 JPKJQBJPBRLVTM-OSLIGDBKSA-N 0.000 description 258
- 102100031277 Calcineurin B homologous protein 1 Human genes 0.000 description 258
- 241000839426 Chlamydia virus Chp1 Species 0.000 description 258
- 101000777252 Homo sapiens Calcineurin B homologous protein 1 Proteins 0.000 description 258
- 101000943802 Homo sapiens Cysteine and histidine-rich domain-containing protein 1 Proteins 0.000 description 258
- 101000674731 Homo sapiens TGF-beta-activated kinase 1 and MAP3K7-binding protein 1 Proteins 0.000 description 56
- 102100021228 TGF-beta-activated kinase 1 and MAP3K7-binding protein 1 Human genes 0.000 description 56
- 238000010438 heat treatment Methods 0.000 description 52
- 102100031272 Calcineurin B homologous protein 2 Human genes 0.000 description 35
- 241001510512 Chlamydia phage 2 Species 0.000 description 35
- 101000777239 Homo sapiens Calcineurin B homologous protein 2 Proteins 0.000 description 35
- 239000000853 adhesive Substances 0.000 description 31
- 230000001070 adhesive effect Effects 0.000 description 31
- 230000004048 modification Effects 0.000 description 24
- 238000012986 modification Methods 0.000 description 24
- 238000011144 upstream manufacturing Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 22
- FQVLRGLGWNWPSS-BXBUPLCLSA-N (4r,7s,10s,13s,16r)-16-acetamido-13-(1h-imidazol-5-ylmethyl)-10-methyl-6,9,12,15-tetraoxo-7-propan-2-yl-1,2-dithia-5,8,11,14-tetrazacycloheptadecane-4-carboxamide Chemical compound N1C(=O)[C@@H](NC(C)=O)CSSC[C@@H](C(N)=O)NC(=O)[C@H](C(C)C)NC(=O)[C@H](C)NC(=O)[C@@H]1CC1=CN=CN1 FQVLRGLGWNWPSS-BXBUPLCLSA-N 0.000 description 21
- 102100034035 Alcohol dehydrogenase 1A Human genes 0.000 description 21
- 101000892220 Geobacillus thermodenitrificans (strain NG80-2) Long-chain-alcohol dehydrogenase 1 Proteins 0.000 description 21
- 101000780443 Homo sapiens Alcohol dehydrogenase 1A Proteins 0.000 description 21
- 238000005516 engineering process Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 21
- 238000004382 potting Methods 0.000 description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 101000674728 Homo sapiens TGF-beta-activated kinase 1 and MAP3K7-binding protein 2 Proteins 0.000 description 11
- 102100021227 TGF-beta-activated kinase 1 and MAP3K7-binding protein 2 Human genes 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 238000006073 displacement reaction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 229920005992 thermoplastic resin Polymers 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 102100034044 All-trans-retinol dehydrogenase [NAD(+)] ADH1B Human genes 0.000 description 5
- 101710193111 All-trans-retinol dehydrogenase [NAD(+)] ADH4 Proteins 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000012467 final product Substances 0.000 description 5
- 239000000446 fuel Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000002485 combustion reaction Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 102100034042 Alcohol dehydrogenase 1C Human genes 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 101000796894 Coturnix japonica Alcohol dehydrogenase 1 Proteins 0.000 description 2
- 101000780463 Homo sapiens Alcohol dehydrogenase 1C Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920005749 polyurethane resin Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
- G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
- G01F1/692—Thin-film arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/696—Circuits therefor, e.g. constant-current flow meters
- G01F1/698—Feedback or rebalancing circuits, e.g. self heated constant temperature flowmeters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0154—Moulding a cap over the MEMS device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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Description
<流量センサの回路構成>
まず、流量センサの回路構成を説明する。図1は、本実施の形態1における流量センサの回路構成を示す回路ブロック図である。図1において、本実施の形態1における流量センサは、まず、流量センサを制御するためのCPU(Central Processing Unit)1を有し、さらに、このCPU1に入力信号を入力するための入力回路2、および、CPU1からの出力信号を出力するための出力回路3を有している。そして、流量センサにはデータを記憶するメモリ4が設けられており、CPU1は、メモリ4にアクセスして、メモリ4に記憶されているデータを参照できるようになっている。
本実施の形態1における流量センサは上記のように構成されており、以下に、その動作について図1を参照しながら説明する。まず、CPU1は、出力回路3を介してトランジスタTrのベース電極に出力信号(制御信号)を出力することにより、トランジスタTrに電流を流す。すると、トランジスタTrのコレクタ電極に接続されている電源PSから、トランジスタTrのエミッタ電極に接続されている発熱抵抗体HRに電流が流れる。このため、発熱抵抗体HRは発熱する。そして、発熱抵抗体HRからの発熱で暖められた気体がヒータ制御ブリッジHCBを構成する抵抗体R1を加熱する。
次に、本実施の形態1における流量センサのレイアウト構成について説明する。例えば、図1に示す本実施の形態1における流量センサは、2つの半導体チップに形成される。具体的には、発熱抵抗体HR、ヒータ制御ブリッジHCBおよび温度センサブリッジTSBが1つの半導体チップに形成され、CPU1、入力回路2、出力回路3およびメモリ4などが別の半導体チップに形成される。以下では、発熱抵抗体HR、ヒータ制御ブリッジHCBおよび温度センサブリッジTSBが形成されている半導体チップのレイアウト構成について説明する。
図3は、第1関連技術における流量センサFSPの構成を示す断面図である。図3に示すように、第1関連技術における流量センサFSPは、チップ搭載部TAB1上に半導体チップCHP1を有しており、この半導体チップCHP1は、チップ搭載部TAB1に接着材ADH1で接着されている。半導体チップCHP1の主面(上面、表面)には、流量検出部FDUが形成されており、半導体チップCHP1の裏面のうち、流量検出部FDUと相対する位置にダイヤフラム(薄板部)DFが形成されている。そして、第1関連技術における流量センサFSPでは、半導体チップCHP1の一部およびチップ搭載部TAB1の一部が樹脂MRを含む封止体で封止されている。具体的に、第1関連技術における流量センサFSPでは、半導体チップCHP1の上面に形成されている流量検出部FDUを露出させながら、半導体チップCHP1の側面および上面の一部を覆うように樹脂MRが形成されている。このとき、第1関連技術における流量センサFSPにおいては、半導体チップCHP1の上面SUR(CHP)の高さが樹脂MRの上面SUR(MR)の高さよりも低くなっている。言い換えれば、樹脂MRの上面SUR(MR)の高さは、半導体チップCHP1の上面SUR(CHP)の高さよりも高くなっているということもできる。
本実施の形態1の特徴は、半導体チップに形成された露出している流量検出部上を流れる気体の進行方向と並行する流量センサの任意断面において、中央部近傍に配置されている半導体チップと重ならずに半導体チップの外側領域に配置された突き出しピンを下金型から突き上げることにより、封止体を下金型から離型する点にある。これにより、半導体チップと重なる領域に突き出しピンを配置して封止体の下金型からの離型を行なう場合に比べて、離型の際に封止体に加わる変形を小さくすることができる。つまり、封止体の中央部近傍を突き出しピンで突き上げる構成よりも、封止体の周辺部(外縁部)近傍を突き出しピンで突き上げる構成を採ることにより、封止体の変形を小さくすることができるのである。この結果、封止体に加わる変形によって、半導体チップに形成されているダイヤフラムが破壊されることを防止することができ、これによって、流量センサの歩留まり向上、引いては、流量センサの製造コストの低減を図ることができる。
以下では、本実施の形態1における流量センサの実装構成について説明する。図7は、本実施の形態1における流量センサFS1の実装構成を示す図であり、樹脂で封止する前の構成を示す図である。特に、図7(a)は、本実施の形態1における流量センサFS1の実装構成を示す平面図である。図7(b)は、図7(a)のA−A線で切断した断面図であり、図7(c)は半導体チップCHP1の裏面を示す平面図である。
以下では、本実施の形態1における特徴である流量センサFS1の製造方法について、図面を参照しながら説明する。まず、図8(a)のA−A線で切断した断面図を使用して、本実施の流量センサFS1が半導体チップCHP1と半導体チップCHP2を有する2チップ構造であることが明確化される観点で説明する(図10〜図13)。その後、図8(a)のB−B線で切断した断面図を使用することにより、本実施の形態1における特徴工程が明確化される観点で説明することにする(図14〜図17)。
この痕跡は、突き出しピンEJPNと、下金型BMに設けられた挿入孔との間に形成される隙間の大小や、突き出しピンEJPNの上面SUR(EJ)と下金型BMの上面SUR(BM)との位置関係によって、様々な形状となる。以下に、この様々な痕跡の形状について、図21(a)〜図21(e)に挙げて説明する。
本実施の形態1における流量センサFS1によれば、以下に示す効果が得られる。
続いて、前記実施の形態1における流量センサFS1の変形例1について説明する。前記実施の形態1では、例えば、図9に示すように、封止体の外縁部の一部を構成する長辺方向(X方向)に沿って、複数の痕跡TCが等間隔で並ぶように形成されている。そして、封止体の外縁部の一部を構成する短辺方向(Y方向)(気体が流れる方向と並行する方向)に着目すると、平面視において、半導体チップCHP1と重ならず、半導体チップCHP1の外側領域に痕跡TCが形成されている。これに対し、本変形例1では、上述した複数の痕跡TCに加えて、さらに、半導体チップCHP1と平面的に重なる封止体の裏面にも痕跡TC2が形成されている例について説明する。
次に、前記実施の形態1における流量センサFS1の変形例2について説明する。前記実施の形態1では、例えば、図8(b)や図8(c)に示すように、チップ搭載部TAB1上に接着材ADH1を介して半導体チップCHP1を配置する例について説明した。本変形例2では、半導体チップCHP1とチップ搭載部TAB1の間に板状構造体PLTを挿入する例について説明する。
前記実施の形態1では、例えば、図8(b)に示すように、半導体チップCHP1と半導体チップCHP2を備える2チップ構造の流量センサFS1を例に挙げて説明した。本発明の技術的思想は、これに限らず、例えば、流量検出部と制御部(制御回路)を一体的に形成した1つの半導体チップを備える1チップ構造の流量センサにも適用することができる。本実施の形態2では、本発明の技術的思想を1チップ構造の流量センサに適用する場合を例に挙げて説明する。
図24は、本実施の形態2における流量センサFS2の実装構成を示す図であり、樹脂で封止した後の構成を示す図である。特に、図24(a)は、本実施の形態2における流量センサFS2の実装構成を示す平面図である。図24(b)は、図24(a)のA−A線で切断した断面図であり、図24(c)は、図24(a)のB−B線で切断した断面図である。特に、図24(b)は、露出している流量検出部FDU上を流れる気体の進行方向と並行する一断面を示しており、図24(b)において、気体は、例えば、X軸を左側から右側に向って流れるものとする。
2 入力回路
3 出力回路
4 メモリ
ADH1 接着材
ADH2 接着材
ADH3 接着材
AHL 位置決め孔
APN 位置決めピン
AR 領域
BM 下金型
BR1 下流測温抵抗体
BR2 下流測温抵抗体
BS(MR) 下面
CHP1 半導体チップ
CHP2 半導体チップ
CNV 凹形状部
CVX1 凸形状部
CVX2 凸形状部
DF ダイヤフラム
DM ダムバー
EJA イジェクタ領域
EJPN 突き出しピン
EPLT 突き出しピンプレート
FDU 流量検出部
FS1 流量センサ
FS2 流量センサ
FSP 流量センサ
HCB ヒータ制御ブリッジ
HR 発熱抵抗体
IP1 入れ駒
LAF 弾性体フィルム
LD1 リード
LD2 リード
LF リードフレーム
MR 樹脂
OP1 開口部
OP2 開口部
PD パッド
PD1 パッド
PD2 パッド
PD3 パッド
PJ プランジャ
PLT 板状構造体
PS 電源
Q 気体流量
R1 抵抗体
R2 抵抗体
R3 抵抗体
R4 抵抗体
SP1 第1空間
SPR バネ
SUR(BM) 上面
SUR(CHP) 上面
SUR(EJ) 上面
SUR(MR) 上面
TAB1 チップ搭載部
TAB2 チップ搭載部
TC 痕跡
TC2 痕跡
Tr トランジスタ
TSB 温度センサブリッジ
UM 上金型
UR1 上流測温抵抗体
UR2 上流測温抵抗体
Vref1 参照電圧
Vref2 参照電圧
W ワイヤ
W1 ワイヤ
W2 ワイヤ
W3 ワイヤ
WL1 配線
Claims (8)
- 第1チップ搭載部と、
前記第1チップ搭載部上に配置された第1半導体チップと、を備え、
前記第1半導体チップは、
第1半導体基板の主面上に形成された流量検出部と、
前記第1半導体基板の前記主面とは反対側の裏面のうち、前記流量検出部と相対する領域に形成されたダイヤフラムとを有し、
前記第1半導体チップに形成されている前記流量検出部を露出した状態で、前記第1半導体チップの一部が、樹脂を含む封止体で封止されている流量センサの製造方法であって、
(a)前記第1チップ搭載部を有する基材を用意する工程と、
(b)前記第1半導体チップを用意する工程と、
(c)前記第1チップ搭載部上に前記第1半導体チップを搭載する工程と、
(d)前記(c)工程後、前記第1半導体チップに形成されている前記流量検出部を露出させつつ、前記第1半導体チップの一部を前記封止体で封止する工程と、を備え、
前記(d)工程は、
(d1)上金型と、突き出しピンが挿入された下金型とを用意する工程と、
(d2)前記(d1)工程後、前記第1半導体チップの上面に前記上金型の一部を押し当て、かつ、前記上金型と前記第1半導体チップの間に前記流量検出部を囲む第1空間を形成しながら、前記上金型と前記下金型とで、前記第1半導体チップを搭載した前記基材を、第2空間を介して挟み込む工程と、
(d3)前記(d2)工程後、前記第2空間に前記樹脂を流し込む工程と、
(d4)前記(d3)工程後、前記樹脂を硬化させて前記封止体を形成する工程と、
(d5)前記(d4)工程後、前記封止体を前記下金型から離型する工程と、を有し、
前記(d5)工程は、露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、前記第1半導体チップと重ならずに前記第1半導体チップの外側領域に配置された前記突き出しピンを前記下金型から突き上げることにより、前記封止体を前記下金型から離型し、
前記基材には、位置決め孔が設けられ、
前記突き出しピンは、露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、前記第1半導体チップの外側領域で、かつ、前記位置決め孔の内側領域に配置され、
前記下金型には、前記位置決め孔に対応した位置に位置決めピンが設けられ、
前記(d2)工程は、前記基材に設けられている前記位置決め孔に、前記下金型に設けられた位置決めピンを挿入することにより、前記基材を前記下金型に固定する流量センサの製造方法。 - 請求項1に記載の流量センサの製造方法であって、
露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、前記突き出しピンは、前記ダイヤフラムの端部と前記突き出しピンとの間の距離よりも、前記基材に設けられた前記位置決め孔に挿入された前記位置決めピンと前記突き出しピンとの間の距離の方が短くなるように配置されている流量センサの製造方法。 - 請求項1に記載の流量センサの製造方法であって、
前記突き出しピンを挿入する前記下金型に設けられた挿入孔の径は、前記突き出しピンの径よりも大きく、
前記(d3)工程では、前記挿入孔と前記突き出しピンの間の隙間の一部に前記樹脂が入り込み、これによって、前記(d4)工程では、前記封止体の下面に第1凸形状部が形成される流量センサの製造方法。 - 請求項1に記載の流量センサの製造方法であって、
前記(d3)工程において、前記突き出しピンの先端部の高さは、前記下金型の上面の高さよりも高く、これによって、前記(d4)工程では、前記封止体の下面に、底面が前記封止体の下面よりも内部に入り込んだ凹部が形成される流量センサの製造方法。 - 請求項1に記載の流量センサの製造方法であって、
前記(d3)工程において、前記突き出しピンの先端部の高さは、前記下金型の上面の高さよりも低く、これによって、前記(d4)工程では、前記封止体の下面に第2凸形状部が形成される流量センサの製造方法。 - 請求項1に記載の流量センサの製造方法であって、
前記突き出しピンは、露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、前記第1半導体チップの一端部と前記封止体の外壁の間に設けられている流量センサの製造方法。 - 請求項1に記載の流量センサの製造方法であって、
前記突き出しピンは、露出している前記流量検出部上を流れる気体の進行方向と並行する任意断面において、前記第1チップ搭載部と重ならずに前記第1チップ搭載部の外側領域に設けられている流量センサの製造方法。 - 請求項1に記載の流量センサの製造方法であって、さらに、
(e)前記(c)工程前に、前記流量検出部を制御する制御回路部を有する第2半導体チップを用意する工程を備え、
前記(a)工程で用意される前記基材は、第2チップ搭載部を有し、
前記(c)工程は、前記第2チップ搭載部上に前記第2半導体チップを搭載し、
前記(d)工程は、前記第2半導体チップを前記封止体で封止し、
前記(d2)工程は、前記上金型の底面を前記第1半導体チップに押し当てることにより、前記流量検出部を囲む前記第1空間を形成しながら、前記上金型と前記下金型とで、前記第1半導体チップおよび前記第2半導体チップを搭載した前記基材を、前記第2空間を介して挟み込む流量センサの製造方法。
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