WO2009038148A1 - 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 - Google Patents

感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 Download PDF

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WO2009038148A1
WO2009038148A1 PCT/JP2008/066887 JP2008066887W WO2009038148A1 WO 2009038148 A1 WO2009038148 A1 WO 2009038148A1 JP 2008066887 W JP2008066887 W JP 2008066887W WO 2009038148 A1 WO2009038148 A1 WO 2009038148A1
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photosensitive composition
group
exposure
disclosed
pattern
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PCT/JP2008/066887
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English (en)
French (fr)
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Kenji Wada
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Fujifilm Corporation
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Priority to EP08832644.2A priority Critical patent/EP2192134B1/en
Priority to US12/679,140 priority patent/US9051403B2/en
Publication of WO2009038148A1 publication Critical patent/WO2009038148A1/ja

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    • C—CHEMISTRY; METALLURGY
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    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
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    • C07D211/00—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings
    • C07D211/92—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings with a hetero atom directly attached to the ring nitrogen atom
    • C07D211/96—Sulfur atom
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    • C07D243/00—Heterocyclic compounds containing seven-membered rings having two nitrogen atoms as the only ring hetero atoms
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    • C07D295/00—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
    • C07D295/22—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with hetero atoms directly attached to ring nitrogen atoms
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    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract

　通常露光（ドライ露光）、液浸露光、二重露光において、パターン形状、ラインエッジラフネスが良好である、感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物を提供する。 　下記一般式（Ｉ）で表される化合物に対応する繰り返し単位を含有し、活性光線又は放射線の照射により酸基を生成する樹脂（Ａ）を含有することを特徴とする感光性組成物。 　一般式（Ｉ）中、Ｚは、活性光線又は放射線の照射により、カチオンが脱離して酸基となる基を表す。Ａは、アルキレン基を表す。Ｘは、単結合又はヘテロ原子を有する２価の連結基を表す。Ｂは、単結合、酸素原子又は－Ｎ（Ｒｘ）－を表す。Ｒｘは、水素原子又は１価の有機基を表す。Ｒは、Ｙによって置換された１価の有機基を表す。Ｂが－Ｎ（Ｒｘ）－を表す場合、ＲとＲｘが結合して環を形成してもよい。Ｙは、重合性基を表す。
PCT/JP2008/066887 2007-09-21 2008-09-18 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 WO2009038148A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08832644.2A EP2192134B1 (en) 2007-09-21 2008-09-18 Photosensitive composition, pattern-forming method using the photosensitive composition, and compound used in the photosensitive composition
US12/679,140 US9051403B2 (en) 2007-09-21 2008-09-18 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition

Applications Claiming Priority (4)

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JP2007-245332 2007-09-21
JP2007245332 2007-09-21
JP2008-009840 2008-01-18
JP2008009840A JP5449675B2 (ja) 2007-09-21 2008-01-18 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物

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US (1) US9051403B2 (ja)
EP (2) EP2192134B1 (ja)
JP (1) JP5449675B2 (ja)
KR (1) KR101538329B1 (ja)
TW (1) TWI479267B (ja)
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Cited By (12)

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JP2009192617A (ja) * 2008-02-12 2009-08-27 Fujifilm Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
WO2010044372A1 (ja) * 2008-10-17 2010-04-22 セントラル硝子株式会社 重合性アニオンを有する含フッ素スルホン酸塩類とその製造方法、含フッ素樹脂、レジスト組成物及びそれを用いたパターン形成方法
US20100183975A1 (en) * 2008-12-18 2010-07-22 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method using the same, and resin
US20120034559A1 (en) * 2010-07-29 2012-02-09 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith
US20120156618A1 (en) * 2009-08-31 2012-06-21 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
US20120237876A1 (en) * 2009-12-08 2012-09-20 Jsr Corporation Radiation-sensitive resin composition, monomer, polymer, and production method of radiation-sensitive resin composition
CN102834374A (zh) * 2010-04-16 2012-12-19 3M创新有限公司 质子传导材料
US20130040096A1 (en) * 2010-05-25 2013-02-14 Fujifilm Corporation Pattern forming method and actinic-ray- or radiation-senstive resin composition
TWI490638B (zh) * 2009-04-15 2015-07-01 Jsr Corp A sensitive radiation linear resin composition, a polymer used in the composition, and a compound used in the composition
EP2833877A4 (en) * 2012-04-03 2015-11-25 Aposense Ltd NEW TARGETING AGENTS FOR DIAGNOSTIC AND THERAPEUTIC INDICATIONS
CN110240671A (zh) * 2018-03-09 2019-09-17 浙江省化工研究院有限公司 一种氟树脂及其制备方法
CN114114835A (zh) * 2021-12-13 2022-03-01 陕西彩虹新材料有限公司 一种添加剂及包含该添加剂的光刻胶组合物

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JP5376847B2 (ja) * 2008-06-30 2013-12-25 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤
EP2189845B1 (en) * 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
JP5586294B2 (ja) * 2009-03-31 2014-09-10 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP5126182B2 (ja) * 2009-04-15 2013-01-23 Ｊｓｒ株式会社 感放射線性樹脂組成物、それに用いる重合体およびそれに用いる化合物
JP5655320B2 (ja) * 2010-02-12 2015-01-21 Jsr株式会社 感放射線性樹脂組成物およびそれに用いる重合体
JP5522165B2 (ja) * 2009-04-21 2014-06-18 Ｊｓｒ株式会社 感放射線性樹脂組成物、重合体及びレジストパターン形成方法
JP5445320B2 (ja) * 2009-05-29 2014-03-19 信越化学工業株式会社 化学増幅型レジスト材料及びパターン形成方法
JP5381905B2 (ja) * 2009-06-16 2014-01-08 信越化学工業株式会社 化学増幅ポジ型フォトレジスト材料及びレジストパターン形成方法
JP5675125B2 (ja) * 2009-09-30 2015-02-25 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該感光性組成物を用いたパターン形成方法
JP5516384B2 (ja) * 2010-01-05 2014-06-11 住友化学株式会社 レジスト組成物
JP5719612B2 (ja) 2010-01-27 2015-05-20 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP5572404B2 (ja) * 2010-01-27 2014-08-13 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP5548473B2 (ja) * 2010-02-18 2014-07-16 富士フイルム株式会社 感活性光線性又は感放射線性樹脂の製造方法、この方法により得られる樹脂、この樹脂を含んだ組成物、並びに、この組成物を用いたレジスト膜及びパターン形成方法
JP5782283B2 (ja) * 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
EP2383611A3 (en) * 2010-04-27 2012-01-25 Rohm and Haas Electronic Materials LLC Photoacid generators and photoresists comprising same
JP5557625B2 (ja) * 2010-06-30 2014-07-23 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法
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JP2009093137A (ja) 2009-04-30
TW200923577A (en) 2009-06-01
TWI479267B (zh) 2015-04-01
KR20100054837A (ko) 2010-05-25
KR101538329B1 (ko) 2015-07-22
EP2426154A1 (en) 2012-03-07
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EP2426154B1 (en) 2013-01-09
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