WO2009060869A1 - ネガ型レジスト組成物、及び当該ネガ型レジスト組成物を用いたパターン形成方法 - Google Patents

ネガ型レジスト組成物、及び当該ネガ型レジスト組成物を用いたパターン形成方法 Download PDF

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Publication number
WO2009060869A1
WO2009060869A1 PCT/JP2008/070134 JP2008070134W WO2009060869A1 WO 2009060869 A1 WO2009060869 A1 WO 2009060869A1 JP 2008070134 W JP2008070134 W JP 2008070134W WO 2009060869 A1 WO2009060869 A1 WO 2009060869A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist composition
negative resist
disclosed
forming pattern
pattern
Prior art date
Application number
PCT/JP2008/070134
Other languages
English (en)
French (fr)
Inventor
Kenichi Okuyama
Satoru Kanke
Original Assignee
Dai Nippon Printing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co., Ltd. filed Critical Dai Nippon Printing Co., Ltd.
Priority to JP2009540064A priority Critical patent/JP5229230B2/ja
Priority to US12/741,246 priority patent/US8198007B2/en
Publication of WO2009060869A1 publication Critical patent/WO2009060869A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

　本発明は、解像度を低下させることなく、高感度で形状が良好なパターンを形成できるネガ型レジスト組成物、及び当該ネガ型レジスト組成物を用いたパターン形成方法を提供することを目的とする。 　特定の構造を有するカリックスレゾルシンアレン誘導体（Ａ）、波長２４８ｎｍ以下の活性エネルギー線を照射することで直接又は間接的に酸を発生する酸発生剤（Ｂ）、及び架橋剤（Ｃ）を含有することを特徴とするネガ型レジスト組成物により、上記課題を解決した。
PCT/JP2008/070134 2007-11-05 2008-11-05 ネガ型レジスト組成物、及び当該ネガ型レジスト組成物を用いたパターン形成方法 WO2009060869A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009540064A JP5229230B2 (ja) 2007-11-05 2008-11-05 ネガ型レジスト組成物、及び当該ネガ型レジスト組成物を用いたパターン形成方法
US12/741,246 US8198007B2 (en) 2007-11-05 2008-11-05 Negative-working resist composition and pattern forming method using the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-287686 2007-11-05
JP2007287686 2007-11-05
JP2008-235189 2008-09-12
JP2008235189 2008-09-12

Publications (1)

Publication Number Publication Date
WO2009060869A1 true WO2009060869A1 (ja) 2009-05-14

Family

ID=40625757

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070134 WO2009060869A1 (ja) 2007-11-05 2008-11-05 ネガ型レジスト組成物、及び当該ネガ型レジスト組成物を用いたパターン形成方法

Country Status (4)

Country Link
US (1) US8198007B2 (ja)
JP (1) JP5229230B2 (ja)
KR (1) KR20100088673A (ja)
WO (1) WO2009060869A1 (ja)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009244766A (ja) * 2008-03-31 2009-10-22 Dainippon Printing Co Ltd ポジ型レジスト組成物、及び当該ポジ型レジスト組成物を用いたパターン形成方法
JP2010266803A (ja) * 2009-05-18 2010-11-25 Shin-Etsu Chemical Co Ltd ネガ型レジスト組成物、パターン形成方法、ネガ型レジスト組成物の検査方法及び調製方法
WO2011024957A1 (ja) * 2009-08-31 2011-03-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
JP2011053369A (ja) * 2009-08-31 2011-03-17 Jsr Corp ネガ型感放射線性樹脂組成物
JP2011053359A (ja) * 2009-08-31 2011-03-17 Jsr Corp ネガ型感放射線性樹脂組成物
JP2011059457A (ja) * 2009-09-11 2011-03-24 Mitsubishi Gas Chemical Co Inc 感放射線性組成物、その製造方法およびレジストパターン形成方法
JP2011081140A (ja) * 2009-10-06 2011-04-21 Mitsubishi Gas Chemical Co Inc 感放射線性組成物、その製造方法、およびレジストパターン形成方法
WO2011065004A1 (ja) 2009-11-27 2011-06-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法
WO2011118726A1 (ja) * 2010-03-26 2011-09-29 大日本印刷株式会社 ネガ型レジスト組成物、並びに、当該レジスト組成物を用いたレリーフパターンの製造方法及び電子部品
WO2012032790A1 (ja) * 2010-09-10 2012-03-15 出光興産株式会社 酸解離性溶解抑止基を有する組成物
JP2012226297A (ja) * 2011-04-08 2012-11-15 Dainippon Printing Co Ltd レジスト帯電防止膜積層体、レリーフパターン製造方法及び電子部品
JP2013018711A (ja) * 2011-07-07 2013-01-31 Mitsubishi Gas Chemical Co Inc 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法
JP2013019945A (ja) * 2011-07-07 2013-01-31 Mitsubishi Gas Chemical Co Inc レジストパターン形成方法
JP2013044808A (ja) * 2011-08-22 2013-03-04 Fujifilm Corp レジストパターン形成方法、レジストパターン、架橋性ネガ型レジスト組成物、ナノインプリント用モールド、及びフォトマスク
US8470509B2 (en) 2009-12-01 2013-06-25 Shin-Etsu Chemical Co., Ltd. Negative resist composition and patterning process
US8841059B2 (en) 2008-09-30 2014-09-23 Dai Nippon Printing Co., Ltd. Crosslinking agent, negative resist composition, and pattern forming method using the negative resist composition
US9046764B2 (en) 2012-01-04 2015-06-02 Shin-Etsu Chemical Co., Ltd. Resist underlayer film composition, method for producing polymer for resist underlayer film, and patterning process using the resist underlayer film composition

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013067612A (ja) 2011-09-23 2013-04-18 Rohm & Haas Electronic Materials Llc カリックスアレーン化合物およびこれを含むフォトレジスト組成物
JP2013079230A (ja) 2011-09-23 2013-05-02 Rohm & Haas Electronic Materials Llc カリックスアレーンおよびこれを含むフォトレジスト組成物
WO2016006358A1 (ja) * 2014-07-09 2016-01-14 Dic株式会社 フェノール性水酸基含有樹脂、その製造方法、感光性組成物、レジスト材料、塗膜、硬化性組成物とその硬化物、及びレジスト下層膜

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JP2004018421A (ja) * 2002-06-13 2004-01-22 Tokuyama Corp 新規カリックスレゾルシナレーン誘導体

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TOMONARI NAKAYAMA ET AL.: "A New Three- Component Photoresist Based on Calix[4] resorcinarene Derivative, a Cross-linker, and a Photo-acid Generator", BULLETIN OF THE CHMEICAL SOCIETY OF JAPAN, vol. 71, no. 12, 1998, pages 2979 - 2984 *
TOMONARI NAKAYAMA ET AL.: "Three-Component Negative-Type Photoresist Based on C- Tetraoctyl-calix[4]resocinarene, a Cross-linker, and a Photo-acid Generator", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, vol. 2, no. 2, 1999, pages 347 - 352 *

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009244766A (ja) * 2008-03-31 2009-10-22 Dainippon Printing Co Ltd ポジ型レジスト組成物、及び当該ポジ型レジスト組成物を用いたパターン形成方法
US8841059B2 (en) 2008-09-30 2014-09-23 Dai Nippon Printing Co., Ltd. Crosslinking agent, negative resist composition, and pattern forming method using the negative resist composition
US8557509B2 (en) 2009-05-18 2013-10-15 Shin-Etsu Chemical Co., Ltd. Negative resist composition, patterning process, and testing process and preparation process of negative resist composition
JP2010266803A (ja) * 2009-05-18 2010-11-25 Shin-Etsu Chemical Co Ltd ネガ型レジスト組成物、パターン形成方法、ネガ型レジスト組成物の検査方法及び調製方法
KR20100124213A (ko) * 2009-05-18 2010-11-26 신에쓰 가가꾸 고교 가부시끼가이샤 네가티브형 레지스트 조성물, 패턴 형성 방법, 네가티브형 레지스트 조성물의 검사 방법 및 제조 방법
TWI485518B (zh) * 2009-05-18 2015-05-21 Shinetsu Chemical Co 負型光阻組成物、圖型之形成方法、負型光阻組成物的檢查方法及調製方法
KR101646790B1 (ko) 2009-05-18 2016-08-12 신에쓰 가가꾸 고교 가부시끼가이샤 네가티브형 레지스트 조성물의 검사 방법 및 제조 방법
KR101669704B1 (ko) * 2009-08-31 2016-10-27 미츠비시 가스 가가쿠 가부시키가이샤 환상 화합물, 그 제조 방법, 감방사선성 조성물 및 레지스트 패턴 형성 방법
JP5733211B2 (ja) * 2009-08-31 2015-06-10 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
KR20120047272A (ko) * 2009-08-31 2012-05-11 미츠비시 가스 가가쿠 가부시키가이샤 환상 화합물, 그 제조 방법, 감방사선성 조성물 및 레지스트 패턴 형성 방법
EP2474518A1 (en) * 2009-08-31 2012-07-11 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern
JP2011053359A (ja) * 2009-08-31 2011-03-17 Jsr Corp ネガ型感放射線性樹脂組成物
JP2011053369A (ja) * 2009-08-31 2011-03-17 Jsr Corp ネガ型感放射線性樹脂組成物
WO2011024957A1 (ja) * 2009-08-31 2011-03-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
EP2474518A4 (en) * 2009-08-31 2014-03-26 Mitsubishi Gas Chemical Co CYCLIC COMPOUND, CYCLIC COMPOUND PRODUCTION METHOD, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESISTANCE STRUCTURE
JP2011059457A (ja) * 2009-09-11 2011-03-24 Mitsubishi Gas Chemical Co Inc 感放射線性組成物、その製造方法およびレジストパターン形成方法
JP2011081140A (ja) * 2009-10-06 2011-04-21 Mitsubishi Gas Chemical Co Inc 感放射線性組成物、その製造方法、およびレジストパターン形成方法
US8969629B2 (en) 2009-11-27 2015-03-03 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, production process thereof, radiation-sensitive composition and resist pattern formation method
CN102666461A (zh) * 2009-11-27 2012-09-12 三菱瓦斯化学株式会社 环状化合物、其生产方法、放射线敏感性组合物和抗蚀图案形成方法
WO2011065004A1 (ja) 2009-11-27 2011-06-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法
JP5857745B2 (ja) * 2009-11-27 2016-02-10 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法
US8470509B2 (en) 2009-12-01 2013-06-25 Shin-Etsu Chemical Co., Ltd. Negative resist composition and patterning process
US9651864B2 (en) 2010-03-26 2017-05-16 Dai Nippon Printing Co., Ltd. Negative resist composition, method for producing relief pattern using the same, and electronic component using the same
WO2011118726A1 (ja) * 2010-03-26 2011-09-29 大日本印刷株式会社 ネガ型レジスト組成物、並びに、当該レジスト組成物を用いたレリーフパターンの製造方法及び電子部品
JP5083478B2 (ja) * 2010-03-26 2012-11-28 大日本印刷株式会社 ネガ型レジスト組成物、並びに、当該レジスト組成物を用いたレリーフパターンの製造方法及び電子部品
WO2012032790A1 (ja) * 2010-09-10 2012-03-15 出光興産株式会社 酸解離性溶解抑止基を有する組成物
JPWO2012032790A1 (ja) * 2010-09-10 2014-01-20 出光興産株式会社 酸解離性溶解抑止基を有する組成物
JP2012226297A (ja) * 2011-04-08 2012-11-15 Dainippon Printing Co Ltd レジスト帯電防止膜積層体、レリーフパターン製造方法及び電子部品
JP2013018711A (ja) * 2011-07-07 2013-01-31 Mitsubishi Gas Chemical Co Inc 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法
JP2013019945A (ja) * 2011-07-07 2013-01-31 Mitsubishi Gas Chemical Co Inc レジストパターン形成方法
JP2013044808A (ja) * 2011-08-22 2013-03-04 Fujifilm Corp レジストパターン形成方法、レジストパターン、架橋性ネガ型レジスト組成物、ナノインプリント用モールド、及びフォトマスク
US9046764B2 (en) 2012-01-04 2015-06-02 Shin-Etsu Chemical Co., Ltd. Resist underlayer film composition, method for producing polymer for resist underlayer film, and patterning process using the resist underlayer film composition

Also Published As

Publication number Publication date
JPWO2009060869A1 (ja) 2011-03-24
US20100239980A1 (en) 2010-09-23
KR20100088673A (ko) 2010-08-10
US8198007B2 (en) 2012-06-12
JP5229230B2 (ja) 2013-07-03

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