WO2008136499A1 - 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 - Google Patents
微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 Download PDFInfo
- Publication number
- WO2008136499A1 WO2008136499A1 PCT/JP2008/058341 JP2008058341W WO2008136499A1 WO 2008136499 A1 WO2008136499 A1 WO 2008136499A1 JP 2008058341 W JP2008058341 W JP 2008058341W WO 2008136499 A1 WO2008136499 A1 WO 2008136499A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- water
- soluble resin
- nitrogen
- micropatterns
- resist pattern
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000011342 resin composition Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 title 2
- 229920002554 vinyl polymer Polymers 0.000 abstract 6
- 239000011347 resin Substances 0.000 abstract 5
- 229920005989 resin Polymers 0.000 abstract 5
- 239000000178 monomer Substances 0.000 abstract 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 abstract 2
- 229920001577 copolymer Polymers 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 abstract 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 125000003277 amino group Chemical group 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229920001519 homopolymer Polymers 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Materials For Photolithography (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097025070A KR101426320B1 (ko) | 2007-05-01 | 2008-05-01 | 미세화 패턴 형성용 수용성 수지 조성물 및 이를 사용한 미세 패턴 형성 방법 |
CN2008800143173A CN101675390B (zh) | 2007-05-01 | 2008-05-01 | 用于形成精细图案的水溶性树脂组合物及使用该组合物形成精细图案的方法 |
US12/451,150 US20100119717A1 (en) | 2007-05-01 | 2008-05-01 | Water-soluble resin composition for the formation of micropatterns and method for the formation of micropatterns with the same |
EP08752271.0A EP2146250B1 (en) | 2007-05-01 | 2008-05-01 | Water-soluble resin composition for the formation of micropatterns and process for the formation of micropatterns with the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007120833A JP5069494B2 (ja) | 2007-05-01 | 2007-05-01 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
JP2007-120833 | 2007-05-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008136499A1 true WO2008136499A1 (ja) | 2008-11-13 |
Family
ID=39943604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/058341 WO2008136499A1 (ja) | 2007-05-01 | 2008-05-01 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100119717A1 (ja) |
EP (1) | EP2146250B1 (ja) |
JP (1) | JP5069494B2 (ja) |
KR (1) | KR101426320B1 (ja) |
CN (1) | CN101675390B (ja) |
TW (1) | TW200916523A (ja) |
WO (1) | WO2008136499A1 (ja) |
Cited By (1)
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---|---|---|---|---|
US20100183851A1 (en) * | 2009-01-21 | 2010-07-22 | Yi Cao | Photoresist Image-forming Process Using Double Patterning |
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US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
US20090253081A1 (en) * | 2008-04-02 | 2009-10-08 | David Abdallah | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step |
JP2010039035A (ja) * | 2008-08-01 | 2010-02-18 | Fujifilm Corp | レジストパターン形成用表面処理剤、レジスト組成物、それらを用いたレジストパターンの表面処理方法及びレジストパターンの形成方法 |
US20100040838A1 (en) * | 2008-08-15 | 2010-02-18 | Abdallah David J | Hardmask Process for Forming a Reverse Tone Image |
US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
US8852848B2 (en) | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
CN105609587B (zh) * | 2010-09-03 | 2017-12-22 | 泰特拉桑有限公司 | 光电设备通过光学涂层局部剥离而实现的精细线金属敷镀 |
JP2012069687A (ja) * | 2010-09-22 | 2012-04-05 | Toshiba Corp | パターンの形成方法、電子デバイスの製造方法、および電子デバイス |
JP5705669B2 (ja) | 2011-07-14 | 2015-04-22 | メルクパフォーマンスマテリアルズIp合同会社 | 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法 |
KR101311447B1 (ko) | 2012-06-15 | 2013-09-25 | 금호석유화학 주식회사 | 아민 염 및 아민을 함유하는 중합체를 함유하는 미세패턴 형성용 수용성 수지 조성물 및 이를 이용한 미세패턴의 형성방법 |
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JP6233240B2 (ja) | 2013-09-26 | 2017-11-22 | 信越化学工業株式会社 | パターン形成方法 |
JP6531397B2 (ja) | 2014-03-07 | 2019-06-19 | Jsr株式会社 | パターン形成方法及びこれに用いられる組成物 |
JP6459759B2 (ja) | 2014-05-26 | 2019-01-30 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
TWI584061B (zh) * | 2014-08-27 | 2017-05-21 | 羅門哈斯電子材料有限公司 | 多重圖案的形成方法 |
JP6455370B2 (ja) | 2014-10-30 | 2019-01-23 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
JP6455369B2 (ja) | 2014-10-30 | 2019-01-23 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
JP6402702B2 (ja) * | 2014-11-04 | 2018-10-10 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
EP3032332B1 (en) | 2014-12-08 | 2017-04-05 | Shin-Etsu Chemical Co., Ltd. | Shrink material and pattern forming process |
JP6398848B2 (ja) | 2014-12-08 | 2018-10-03 | 信越化学工業株式会社 | シュリンク材料及びパターン形成方法 |
JP6332113B2 (ja) | 2014-12-08 | 2018-05-30 | 信越化学工業株式会社 | シュリンク材料及びパターン形成方法 |
EP3032333B1 (en) | 2014-12-08 | 2017-05-24 | Shin-Etsu Chemical Co., Ltd. | Shrink material and pattern forming process |
JP6481602B2 (ja) * | 2015-01-09 | 2019-03-13 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
US9673341B2 (en) | 2015-05-08 | 2017-06-06 | Tetrasun, Inc. | Photovoltaic devices with fine-line metallization and methods for manufacture |
TWI615460B (zh) * | 2015-06-03 | 2018-02-21 | 羅門哈斯電子材料有限公司 | 用於圖案處理的組合物和方法 |
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US10162265B2 (en) * | 2015-12-09 | 2018-12-25 | Rohm And Haas Electronic Materials Llc | Pattern treatment methods |
JP6610285B2 (ja) * | 2016-01-22 | 2019-11-27 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理システム並びに基板処理方法 |
JP2017165846A (ja) | 2016-03-15 | 2017-09-21 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 微細パターン形成用組成物およびそれを用いた微細パターン形成方法 |
JP2018127513A (ja) | 2017-02-06 | 2018-08-16 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 半導体水溶性組成物、およびその使用 |
JP2020067547A (ja) | 2018-10-24 | 2020-04-30 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 半導体水溶性組成物およびその使用 |
WO2021079879A1 (ja) * | 2019-10-21 | 2021-04-29 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置および個片化方法 |
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Cited By (3)
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US20100183851A1 (en) * | 2009-01-21 | 2010-07-22 | Yi Cao | Photoresist Image-forming Process Using Double Patterning |
WO2010084372A1 (en) * | 2009-01-21 | 2010-07-29 | Az Electronic Materials Usa Corp. | A photoresist image-forming process using double patterning |
JP2012515944A (ja) * | 2009-01-21 | 2012-07-12 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | 二重パターニングを用いるフォトレジスト像形成法 |
Also Published As
Publication number | Publication date |
---|---|
EP2146250B1 (en) | 2017-08-23 |
CN101675390B (zh) | 2012-07-18 |
CN101675390A (zh) | 2010-03-17 |
KR101426320B1 (ko) | 2014-08-06 |
JP5069494B2 (ja) | 2012-11-07 |
EP2146250A4 (en) | 2011-07-06 |
JP2008275995A (ja) | 2008-11-13 |
KR20100027120A (ko) | 2010-03-10 |
EP2146250A1 (en) | 2010-01-20 |
EP2146250A8 (en) | 2010-03-03 |
TW200916523A (en) | 2009-04-16 |
US20100119717A1 (en) | 2010-05-13 |
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