WO2008044786A1 - Machining end point detecting method, grinding method, and grinder - Google Patents
Machining end point detecting method, grinding method, and grinder Download PDFInfo
- Publication number
- WO2008044786A1 WO2008044786A1 PCT/JP2007/070030 JP2007070030W WO2008044786A1 WO 2008044786 A1 WO2008044786 A1 WO 2008044786A1 JP 2007070030 W JP2007070030 W JP 2007070030W WO 2008044786 A1 WO2008044786 A1 WO 2008044786A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- polished
- sensor
- end point
- top ring
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/12—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with apertures for inspecting the surface to be abraded
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
- G05B19/406—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by monitoring or safety
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
- G05B19/406—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by monitoring or safety
- G05B19/4065—Monitoring tool breakage, life or condition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008538779A JP5006883B2 (ja) | 2006-10-06 | 2007-10-05 | 加工終点検知方法および加工装置 |
KR1020137018019A KR101381341B1 (ko) | 2006-10-06 | 2007-10-05 | 가공 종점 검지방법, 연마방법 및 연마장치 |
KR1020097009205A KR101357290B1 (ko) | 2006-10-06 | 2007-10-05 | 가공 종점 검지방법, 연마방법 및 연마장치 |
US12/311,560 US8554356B2 (en) | 2006-10-06 | 2007-10-05 | Processing end point detection method, polishing method, and polishing apparatus |
CN2007800372892A CN101523565B (zh) | 2006-10-06 | 2007-10-05 | 加工终点检测方法、研磨方法及研磨装置 |
US14/017,620 US10207390B2 (en) | 2006-10-06 | 2013-09-04 | Processing end point detection method, polishing method, and polishing apparatus |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-274622 | 2006-10-06 | ||
JP2006274622 | 2006-10-06 | ||
JP2006-330383 | 2006-12-07 | ||
JP2006330383 | 2006-12-07 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/311,560 A-371-Of-International US8554356B2 (en) | 2006-10-06 | 2007-10-05 | Processing end point detection method, polishing method, and polishing apparatus |
US14/017,620 Division US10207390B2 (en) | 2006-10-06 | 2013-09-04 | Processing end point detection method, polishing method, and polishing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008044786A1 true WO2008044786A1 (en) | 2008-04-17 |
Family
ID=39282970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/070030 WO2008044786A1 (en) | 2006-10-06 | 2007-10-05 | Machining end point detecting method, grinding method, and grinder |
Country Status (6)
Country | Link |
---|---|
US (2) | US8554356B2 (ja) |
JP (2) | JP5006883B2 (ja) |
KR (2) | KR101357290B1 (ja) |
CN (2) | CN102490112B (ja) |
TW (1) | TWI422798B (ja) |
WO (1) | WO2008044786A1 (ja) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009291857A (ja) * | 2008-06-03 | 2009-12-17 | Ebara Corp | 研磨終点検知方法 |
JP2010023210A (ja) * | 2008-07-23 | 2010-02-04 | Ebara Corp | 研磨終点検知方法および研磨装置 |
JP2010036299A (ja) * | 2008-08-05 | 2010-02-18 | Ebara Corp | 研磨方法および装置 |
JP2010115726A (ja) * | 2008-11-11 | 2010-05-27 | Ebara Corp | 研磨終点検知用の光の波長選択に用いられるダイヤグラムの作成方法、光の波長選択方法、研磨終点検出方法、研磨終点検出装置、および研磨装置 |
JP2010120092A (ja) * | 2008-11-17 | 2010-06-03 | Nikon Corp | 終点検出装置および研磨装置 |
JP2010253627A (ja) * | 2009-04-27 | 2010-11-11 | Ebara Corp | 研磨方法及び研磨装置及び基板の監視方法 |
JP2011009679A (ja) * | 2009-05-27 | 2011-01-13 | Ebara Corp | 研磨終点検知方法、研磨終点検知装置、研磨方法、および研磨装置 |
JP2011082286A (ja) * | 2009-10-06 | 2011-04-21 | Ebara Corp | 研磨終点検知方法および研磨終点検知装置 |
JP2011520264A (ja) * | 2008-05-02 | 2011-07-14 | アプライド マテリアルズ インコーポレイテッド | 複数のスペクトルを使用する化学機械研磨での終点検出 |
US8454407B2 (en) | 2008-08-05 | 2013-06-04 | Ebara Corporation | Polishing method and apparatus |
JP2013110390A (ja) * | 2011-10-26 | 2013-06-06 | Ebara Corp | 研磨方法および研磨装置 |
US8657644B2 (en) | 2009-07-16 | 2014-02-25 | Ebara Corporation | Eddy current sensor and polishing method and apparatus |
JP2015156503A (ja) * | 2010-03-02 | 2015-08-27 | 株式会社荏原製作所 | 研磨監視方法、研磨監視装置、および研磨装置 |
JP2016165792A (ja) * | 2015-03-05 | 2016-09-15 | ミクロ技研株式会社 | 研磨ヘッド及び研磨処理装置 |
JP2017064801A (ja) * | 2015-09-28 | 2017-04-06 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
JP2017064894A (ja) * | 2015-10-02 | 2017-04-06 | ミクロ技研株式会社 | 研磨ヘッド及び研磨処理装置 |
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US7764377B2 (en) | 2005-08-22 | 2010-07-27 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
US7998358B2 (en) | 2006-10-31 | 2011-08-16 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
US8352061B2 (en) | 2008-11-14 | 2013-01-08 | Applied Materials, Inc. | Semi-quantitative thickness determination |
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US11571782B2 (en) * | 2018-11-28 | 2023-02-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Single bodied platen housing a detection module for CMP systems |
TW202044394A (zh) * | 2019-05-22 | 2020-12-01 | 日商荏原製作所股份有限公司 | 基板處理系統 |
JP7253458B2 (ja) * | 2019-06-27 | 2023-04-06 | 株式会社荏原製作所 | 光学式膜厚測定装置の最適な動作レシピを決定する方法、装置、およびシステム |
CN110549240B (zh) * | 2019-09-18 | 2020-12-29 | 清华大学 | 一种终点检测方法和化学机械抛光装置 |
TWI810069B (zh) * | 2020-06-08 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品 |
US20220281060A1 (en) * | 2021-03-03 | 2022-09-08 | Applied Materials, Inc. | Pressure signals with different frequencies during friction monitoring to provide spatial resolution |
US11965798B2 (en) * | 2021-06-10 | 2024-04-23 | Applied Materials, Inc. | Endpoint detection system for enhanced spectral data collection |
US11901203B2 (en) | 2021-06-10 | 2024-02-13 | Applied Materials, Inc. | Substrate process endpoint detection using machine learning |
CN113399784B (zh) * | 2021-07-09 | 2022-08-12 | 武汉武重机床有限公司 | 工件加工控制方法、装置、设备及存储介质 |
CN114029790B (zh) * | 2021-11-25 | 2023-04-07 | 北京晶亦精微科技股份有限公司 | 一种晶圆研磨方法 |
CN117067042B (zh) * | 2023-10-17 | 2024-01-30 | 杭州泓芯微半导体有限公司 | 一种研磨机及其控制方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1133901A (ja) * | 1997-07-18 | 1999-02-09 | Nikon Corp | ウェハ研磨装置 |
JP2000033561A (ja) * | 1998-07-21 | 2000-02-02 | Dainippon Screen Mfg Co Ltd | 終点検出装置、終点検出方法 |
JP2004514273A (ja) * | 2000-07-31 | 2004-05-13 | エイエスエムエル ユーエス インコーポレイテッド | 化学機械研磨における終点検出のための原位置方法及び装置 |
JP2004154928A (ja) * | 2002-10-17 | 2004-06-03 | Ebara Corp | 研磨状態監視装置、ポリッシング装置、及び研磨方法 |
Family Cites Families (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5891352A (en) * | 1993-09-16 | 1999-04-06 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US5644503A (en) * | 1994-03-28 | 1997-07-01 | Hitachi, Ltd. | Methods and apparatuses for analyzing multichannel chromatogram |
EP0756318A1 (en) * | 1995-07-24 | 1997-01-29 | International Business Machines Corporation | Method for real-time in-situ monitoring of a trench formation process |
JP3766991B2 (ja) * | 1995-10-20 | 2006-04-19 | 株式会社日立製作所 | プラズマ処理の終点検出方法及び装置、並びに本検出方法及び装置を用いた半導体製造方法及び装置 |
US6146248A (en) * | 1997-05-28 | 2000-11-14 | Lam Research Corporation | Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher |
US6108091A (en) * | 1997-05-28 | 2000-08-22 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
US6489624B1 (en) | 1997-07-18 | 2002-12-03 | Nikon Corporation | Apparatus and methods for detecting thickness of a patterned layer |
US6950193B1 (en) * | 1997-10-28 | 2005-09-27 | Rockwell Automation Technologies, Inc. | System for monitoring substrate conditions |
US6068539A (en) * | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
US6248000B1 (en) * | 1998-03-24 | 2001-06-19 | Nikon Research Corporation Of America | Polishing pad thinning to optically access a semiconductor wafer surface |
US6271047B1 (en) * | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
US6077783A (en) * | 1998-06-30 | 2000-06-20 | Lsi Logic Corporation | Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer |
US6241847B1 (en) * | 1998-06-30 | 2001-06-05 | Lsi Logic Corporation | Method and apparatus for detecting a polishing endpoint based upon infrared signals |
US6204922B1 (en) * | 1998-12-11 | 2001-03-20 | Filmetrics, Inc. | Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample |
US6172756B1 (en) * | 1998-12-11 | 2001-01-09 | Filmetrics, Inc. | Rapid and accurate end point detection in a noisy environment |
US6117779A (en) * | 1998-12-15 | 2000-09-12 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint |
US6358128B1 (en) * | 1999-03-05 | 2002-03-19 | Ebara Corporation | Polishing apparatus |
US6354922B1 (en) * | 1999-08-20 | 2002-03-12 | Ebara Corporation | Polishing apparatus |
JP3327289B2 (ja) * | 2000-03-29 | 2002-09-24 | 株式会社ニコン | 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体 |
US6570662B1 (en) * | 1999-05-24 | 2003-05-27 | Luxtron Corporation | Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers |
WO2000071971A1 (en) * | 1999-05-24 | 2000-11-30 | Luxtron Corporation | Optical techniques for measuring layer thicknesses |
US6776692B1 (en) * | 1999-07-09 | 2004-08-17 | Applied Materials Inc. | Closed-loop control of wafer polishing in a chemical mechanical polishing system |
US6273792B1 (en) * | 1999-08-11 | 2001-08-14 | Speedfam-Ipec Corporation | Method and apparatus for in-situ measurement of workpiece displacement during chemical mechanical polishing |
US6306008B1 (en) * | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
US6630995B1 (en) * | 1999-09-07 | 2003-10-07 | Applied Materials, Inc. | Method and apparatus for embedded substrate and system status monitoring |
US6671051B1 (en) * | 1999-09-15 | 2003-12-30 | Kla-Tencor | Apparatus and methods for detecting killer particles during chemical mechanical polishing |
US6628397B1 (en) * | 1999-09-15 | 2003-09-30 | Kla-Tencor | Apparatus and methods for performing self-clearing optical measurements |
US6514121B1 (en) * | 1999-10-27 | 2003-02-04 | Strasbaugh | Polishing chemical delivery for small head chemical mechanical planarization |
US6629874B1 (en) * | 1999-10-27 | 2003-10-07 | Strasbaugh | Feature height measurement during CMP |
US6520843B1 (en) * | 1999-10-27 | 2003-02-18 | Strasbaugh | High planarity chemical mechanical planarization |
US6517419B1 (en) * | 1999-10-27 | 2003-02-11 | Strasbaugh | Shaping polishing pad for small head chemical mechanical planarization |
US6976901B1 (en) * | 1999-10-27 | 2005-12-20 | Strasbaugh | In situ feature height measurement |
JP3259225B2 (ja) * | 1999-12-27 | 2002-02-25 | 株式会社ニコン | 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス |
US20020023715A1 (en) * | 2000-05-26 | 2002-02-28 | Norio Kimura | Substrate polishing apparatus and substrate polishing mehod |
JP3832198B2 (ja) * | 2000-06-16 | 2006-10-11 | 日本電気株式会社 | 半導体ウェハの研磨終点検出方法ならびにその装置 |
US6878038B2 (en) * | 2000-07-10 | 2005-04-12 | Applied Materials Inc. | Combined eddy current sensing and optical monitoring for chemical mechanical polishing |
US6602724B2 (en) * | 2000-07-27 | 2003-08-05 | Applied Materials, Inc. | Chemical mechanical polishing of a metal layer with polishing rate monitoring |
US6476921B1 (en) | 2000-07-31 | 2002-11-05 | Asml Us, Inc. | In-situ method and apparatus for end point detection in chemical mechanical polishing |
US7134934B2 (en) * | 2000-08-30 | 2006-11-14 | Micron Technology, Inc. | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium |
TW464588B (en) * | 2000-08-31 | 2001-11-21 | United Microelectronics Corp | Device for detecting abnormality of chemical mechanical polishing |
US6809809B2 (en) * | 2000-11-15 | 2004-10-26 | Real Time Metrology, Inc. | Optical method and apparatus for inspecting large area planar objects |
JP4810728B2 (ja) * | 2000-12-04 | 2011-11-09 | 株式会社ニコン | 研磨状況モニタ方法及びその装置、研磨装置、並びに半導体デバイス製造方法 |
US6491569B2 (en) * | 2001-04-19 | 2002-12-10 | Speedfam-Ipec Corporation | Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP |
US6676482B2 (en) * | 2001-04-20 | 2004-01-13 | Speedfam-Ipec Corporation | Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling |
US6966816B2 (en) * | 2001-05-02 | 2005-11-22 | Applied Materials, Inc. | Integrated endpoint detection system with optical and eddy current monitoring |
US6821794B2 (en) * | 2001-10-04 | 2004-11-23 | Novellus Systems, Inc. | Flexible snapshot in endpoint detection |
US6635573B2 (en) * | 2001-10-29 | 2003-10-21 | Applied Materials, Inc | Method of detecting an endpoint during etching of a material within a recess |
US7074110B1 (en) * | 2001-11-23 | 2006-07-11 | Stephan H Wolf | Optical coupler hub for chemical-mechanical-planarization polishing pads with an integrated optical waveguide |
US7024268B1 (en) * | 2002-03-22 | 2006-04-04 | Applied Materials Inc. | Feedback controlled polishing processes |
US6908846B2 (en) * | 2002-10-24 | 2005-06-21 | Lam Research Corporation | Method and apparatus for detecting endpoint during plasma etching of thin films |
US6991514B1 (en) * | 2003-02-21 | 2006-01-31 | Verity Instruments, Inc. | Optical closed-loop control system for a CMP apparatus and method of manufacture thereof |
US6972848B2 (en) * | 2003-03-04 | 2005-12-06 | Hitach High-Technologies Corporation | Semiconductor fabricating apparatus with function of determining etching processing state |
US6945845B2 (en) * | 2003-03-04 | 2005-09-20 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with non-conductive elements |
WO2004090502A2 (en) * | 2003-04-01 | 2004-10-21 | Filmetrics, Inc. | Whole-substrate spectral imaging system for cmp |
US20050023149A1 (en) * | 2003-06-05 | 2005-02-03 | Tsutomu Nakada | Plating apparatus, plating method and substrate processing apparatus |
US7008296B2 (en) * | 2003-06-18 | 2006-03-07 | Applied Materials, Inc. | Data processing for monitoring chemical mechanical polishing |
JP2005029830A (ja) * | 2003-07-10 | 2005-02-03 | Ebara Corp | めっき装置及びめっき方法 |
JP2005051093A (ja) | 2003-07-30 | 2005-02-24 | Shimadzu Corp | データ収集装置、及び該装置を用いた基板研磨装置 |
US7025658B2 (en) | 2003-08-18 | 2006-04-11 | Applied Materials, Inc. | Platen and head rotation rates for monitoring chemical mechanical polishing |
US7153185B1 (en) * | 2003-08-18 | 2006-12-26 | Applied Materials, Inc. | Substrate edge detection |
US7097537B1 (en) * | 2003-08-18 | 2006-08-29 | Applied Materials, Inc. | Determination of position of sensor measurements during polishing |
US6991516B1 (en) * | 2003-08-18 | 2006-01-31 | Applied Materials Inc. | Chemical mechanical polishing with multi-stage monitoring of metal clearing |
US20050051437A1 (en) * | 2003-09-04 | 2005-03-10 | Keiichi Kurashina | Plating apparatus and plating method |
JP4464642B2 (ja) | 2003-09-10 | 2010-05-19 | 株式会社荏原製作所 | 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法 |
US20050066739A1 (en) * | 2003-09-26 | 2005-03-31 | Lam Research Corporation | Method and apparatus for wafer mechanical stress monitoring and wafer thermal stress monitoring |
US20050173259A1 (en) * | 2004-02-06 | 2005-08-11 | Applied Materials, Inc. | Endpoint system for electro-chemical mechanical polishing |
US8110814B2 (en) * | 2003-10-16 | 2012-02-07 | Alis Corporation | Ion sources, systems and methods |
US20060166608A1 (en) * | 2004-04-01 | 2006-07-27 | Chalmers Scott A | Spectral imaging of substrates |
WO2005123335A1 (en) | 2004-06-21 | 2005-12-29 | Ebara Corporation | Polishing apparatus and polishing method |
JP4641395B2 (ja) * | 2004-08-17 | 2011-03-02 | Okiセミコンダクタ株式会社 | 半導体装置の研削方法、及び研削装置 |
WO2006022452A2 (en) * | 2004-08-27 | 2006-03-02 | Ebara Corporation | Polishing apparatus and polishing method |
US20070205112A1 (en) * | 2004-08-27 | 2007-09-06 | Masako Kodera | Polishing apparatus and polishing method |
US7565084B1 (en) * | 2004-09-15 | 2009-07-21 | Wach Michael L | Robustly stabilizing laser systems |
DE102004058133B4 (de) * | 2004-12-02 | 2006-11-09 | Infineon Technologies Ag | Verfahren zum Überwachen eines CMP-Polierverfahrens und Anordnung zur Durchführung eines CMP-Polierverfahrens |
EP2278324B1 (en) * | 2005-07-07 | 2012-08-29 | Kabushiki Kaisha Toshiba | Surface inspecting method using a surface wave |
KR100716935B1 (ko) * | 2005-11-25 | 2007-05-14 | 두산디앤디 주식회사 | 반도체 웨이퍼의 화학기계적 연마장치용 로딩디바이스 |
EP1983558A4 (en) * | 2006-02-06 | 2011-08-10 | Toray Industries | ABRASIVE SKATE AND ABRASIVE DEVICE |
JP2007287939A (ja) * | 2006-04-17 | 2007-11-01 | Ebara Corp | 研磨方法、及び研磨装置 |
US7494929B2 (en) * | 2006-04-27 | 2009-02-24 | Applied Materials, Inc. | Automatic gain control |
KR101278236B1 (ko) * | 2006-09-12 | 2013-06-24 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마장치 및 연마방법 |
US7998358B2 (en) * | 2006-10-31 | 2011-08-16 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
US20080188162A1 (en) * | 2007-02-06 | 2008-08-07 | Itsuki Kobata | Electrochemical mechanical polishing apparatus conditioning method, and conditioning solution |
JP5219395B2 (ja) * | 2007-03-29 | 2013-06-26 | 株式会社東京精密 | ウェハ研磨モニタ方法とその装置 |
US7952708B2 (en) * | 2007-04-02 | 2011-05-31 | Applied Materials, Inc. | High throughput measurement system |
JP2009026850A (ja) * | 2007-07-18 | 2009-02-05 | Elpida Memory Inc | Cmp装置及びcmpによるウェハー研磨方法 |
JP2009033038A (ja) * | 2007-07-30 | 2009-02-12 | Elpida Memory Inc | Cmp装置及びcmpによるウェハー研磨方法 |
US8870625B2 (en) * | 2007-11-28 | 2014-10-28 | Ebara Corporation | Method and apparatus for dressing polishing pad, profile measuring method, substrate polishing apparatus, and substrate polishing method |
JP5248127B2 (ja) * | 2008-01-30 | 2013-07-31 | 株式会社荏原製作所 | 研磨方法及び研磨装置 |
JP5254668B2 (ja) * | 2008-06-03 | 2013-08-07 | 株式会社荏原製作所 | 研磨終点検出方法 |
US8388408B2 (en) * | 2008-10-10 | 2013-03-05 | Ebara Corporation | Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method |
-
2007
- 2007-10-05 JP JP2008538779A patent/JP5006883B2/ja active Active
- 2007-10-05 US US12/311,560 patent/US8554356B2/en active Active
- 2007-10-05 TW TW096137408A patent/TWI422798B/zh active
- 2007-10-05 KR KR1020097009205A patent/KR101357290B1/ko active IP Right Grant
- 2007-10-05 KR KR1020137018019A patent/KR101381341B1/ko active IP Right Grant
- 2007-10-05 CN CN201110416880.7A patent/CN102490112B/zh active Active
- 2007-10-05 WO PCT/JP2007/070030 patent/WO2008044786A1/ja active Application Filing
- 2007-10-05 CN CN2007800372892A patent/CN101523565B/zh active Active
-
2010
- 2010-06-22 JP JP2010141522A patent/JP2010240837A/ja active Pending
-
2013
- 2013-09-04 US US14/017,620 patent/US10207390B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1133901A (ja) * | 1997-07-18 | 1999-02-09 | Nikon Corp | ウェハ研磨装置 |
JP2000033561A (ja) * | 1998-07-21 | 2000-02-02 | Dainippon Screen Mfg Co Ltd | 終点検出装置、終点検出方法 |
JP2004514273A (ja) * | 2000-07-31 | 2004-05-13 | エイエスエムエル ユーエス インコーポレイテッド | 化学機械研磨における終点検出のための原位置方法及び装置 |
JP2004154928A (ja) * | 2002-10-17 | 2004-06-03 | Ebara Corp | 研磨状態監視装置、ポリッシング装置、及び研磨方法 |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011520264A (ja) * | 2008-05-02 | 2011-07-14 | アプライド マテリアルズ インコーポレイテッド | 複数のスペクトルを使用する化学機械研磨での終点検出 |
JP2009291857A (ja) * | 2008-06-03 | 2009-12-17 | Ebara Corp | 研磨終点検知方法 |
US8157616B2 (en) | 2008-06-03 | 2012-04-17 | Ebara Corporation | Polishing end point detection method |
JP2010023210A (ja) * | 2008-07-23 | 2010-02-04 | Ebara Corp | 研磨終点検知方法および研磨装置 |
JP2010036299A (ja) * | 2008-08-05 | 2010-02-18 | Ebara Corp | 研磨方法および装置 |
US8454407B2 (en) | 2008-08-05 | 2013-06-04 | Ebara Corporation | Polishing method and apparatus |
JP2010115726A (ja) * | 2008-11-11 | 2010-05-27 | Ebara Corp | 研磨終点検知用の光の波長選択に用いられるダイヤグラムの作成方法、光の波長選択方法、研磨終点検出方法、研磨終点検出装置、および研磨装置 |
JP2010120092A (ja) * | 2008-11-17 | 2010-06-03 | Nikon Corp | 終点検出装置および研磨装置 |
JP2010253627A (ja) * | 2009-04-27 | 2010-11-11 | Ebara Corp | 研磨方法及び研磨装置及び基板の監視方法 |
JP2011009679A (ja) * | 2009-05-27 | 2011-01-13 | Ebara Corp | 研磨終点検知方法、研磨終点検知装置、研磨方法、および研磨装置 |
US8657644B2 (en) | 2009-07-16 | 2014-02-25 | Ebara Corporation | Eddy current sensor and polishing method and apparatus |
JP2011082286A (ja) * | 2009-10-06 | 2011-04-21 | Ebara Corp | 研磨終点検知方法および研磨終点検知装置 |
US8777694B2 (en) | 2009-10-06 | 2014-07-15 | Ebara Corporation | Polishing endpoint detection method |
JP2015156503A (ja) * | 2010-03-02 | 2015-08-27 | 株式会社荏原製作所 | 研磨監視方法、研磨監視装置、および研磨装置 |
JP2013110390A (ja) * | 2011-10-26 | 2013-06-06 | Ebara Corp | 研磨方法および研磨装置 |
JP2016165792A (ja) * | 2015-03-05 | 2016-09-15 | ミクロ技研株式会社 | 研磨ヘッド及び研磨処理装置 |
JP2017064801A (ja) * | 2015-09-28 | 2017-04-06 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
WO2017056636A1 (ja) * | 2015-09-28 | 2017-04-06 | 株式会社 荏原製作所 | 研磨方法および研磨装置 |
US10569381B2 (en) | 2015-09-28 | 2020-02-25 | Ebara Corporation | Polishing method and polishing apparatus |
TWI719036B (zh) * | 2015-09-28 | 2021-02-21 | 日商荏原製作所股份有限公司 | 研磨方法及研磨裝置 |
JP2017064894A (ja) * | 2015-10-02 | 2017-04-06 | ミクロ技研株式会社 | 研磨ヘッド及び研磨処理装置 |
JP2019075520A (ja) * | 2017-10-19 | 2019-05-16 | 株式会社荏原製作所 | 研磨装置、及び研磨方法 |
JP7141204B2 (ja) | 2017-10-19 | 2022-09-22 | 株式会社荏原製作所 | 研磨装置、及び研磨方法 |
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US20100015889A1 (en) | 2010-01-21 |
CN101523565A (zh) | 2009-09-02 |
JP5006883B2 (ja) | 2012-08-22 |
KR101357290B1 (ko) | 2014-01-28 |
CN102490112B (zh) | 2015-03-25 |
US20140004773A1 (en) | 2014-01-02 |
KR101381341B1 (ko) | 2014-04-04 |
CN102490112A (zh) | 2012-06-13 |
US10207390B2 (en) | 2019-02-19 |
JPWO2008044786A1 (ja) | 2010-02-18 |
US8554356B2 (en) | 2013-10-08 |
TWI422798B (zh) | 2014-01-11 |
KR20130088895A (ko) | 2013-08-08 |
JP2010240837A (ja) | 2010-10-28 |
CN101523565B (zh) | 2012-02-29 |
TW200827659A (en) | 2008-07-01 |
KR20090083360A (ko) | 2009-08-03 |
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