WO2002097891A2 - Dram-zellenanordnung mit vertikalen mos-transistoren und verfahren zu deren herstellung - Google Patents
Dram-zellenanordnung mit vertikalen mos-transistoren und verfahren zu deren herstellung Download PDFInfo
- Publication number
- WO2002097891A2 WO2002097891A2 PCT/EP2002/005651 EP0205651W WO02097891A2 WO 2002097891 A2 WO2002097891 A2 WO 2002097891A2 EP 0205651 W EP0205651 W EP 0205651W WO 02097891 A2 WO02097891 A2 WO 02097891A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- mos transistors
- layer
- trenches
- auxiliary
- Prior art date
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037015568A KR100567495B1 (ko) | 2001-05-29 | 2002-05-23 | 종형 mos 트랜지스터를 구비한 dram 셀 장치 및제조 방법 |
EP02740639A EP1396026A2 (de) | 2001-05-29 | 2002-05-23 | Dram-zellenanordnung mit vertikalen mos-transistoren und verfahren zu deren herstellung |
JP2003500975A JP2004527920A (ja) | 2001-05-29 | 2002-05-23 | 垂直mosトランジスタを有するdramセル構成、およびこの構成を製作する方法 |
US10/720,730 US6939763B2 (en) | 2001-05-29 | 2003-11-24 | DRAM cell arrangement with vertical MOS transistors, and method for its fabrication |
US11/158,439 US7329916B2 (en) | 2001-05-29 | 2005-06-22 | DRAM cell arrangement with vertical MOS transistors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10125967.0 | 2001-05-29 | ||
DE10125967A DE10125967C1 (de) | 2001-05-29 | 2001-05-29 | DRAM-Zellanordnung mit vertikalen MOS-Transistoren und Verfahren zu deren Herstellung |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/720,730 Continuation US6939763B2 (en) | 2001-05-29 | 2003-11-24 | DRAM cell arrangement with vertical MOS transistors, and method for its fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002097891A2 true WO2002097891A2 (de) | 2002-12-05 |
WO2002097891A3 WO2002097891A3 (de) | 2003-10-09 |
Family
ID=7686407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2002/005651 WO2002097891A2 (de) | 2001-05-29 | 2002-05-23 | Dram-zellenanordnung mit vertikalen mos-transistoren und verfahren zu deren herstellung |
Country Status (8)
Country | Link |
---|---|
US (2) | US6939763B2 (de) |
EP (1) | EP1396026A2 (de) |
JP (1) | JP2004527920A (de) |
KR (1) | KR100567495B1 (de) |
CN (1) | CN1290198C (de) |
DE (1) | DE10125967C1 (de) |
TW (1) | TW569397B (de) |
WO (1) | WO2002097891A2 (de) |
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US20040259312A1 (en) | 2004-12-23 |
US6939763B2 (en) | 2005-09-06 |
CN1290198C (zh) | 2006-12-13 |
DE10125967C1 (de) | 2002-07-11 |
WO2002097891A3 (de) | 2003-10-09 |
JP2004527920A (ja) | 2004-09-09 |
KR100567495B1 (ko) | 2006-04-03 |
CN1513208A (zh) | 2004-07-14 |
TW569397B (en) | 2004-01-01 |
EP1396026A2 (de) | 2004-03-10 |
US7329916B2 (en) | 2008-02-12 |
US20050253180A1 (en) | 2005-11-17 |
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