WO2002011214A1 - Beleuchtungseinheit mit mindestens einer led als lichtquelle - Google Patents

Beleuchtungseinheit mit mindestens einer led als lichtquelle Download PDF

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Publication number
WO2002011214A1
WO2002011214A1 PCT/DE2001/002849 DE0102849W WO0211214A1 WO 2002011214 A1 WO2002011214 A1 WO 2002011214A1 DE 0102849 W DE0102849 W DE 0102849W WO 0211214 A1 WO0211214 A1 WO 0211214A1
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WIPO (PCT)
Prior art keywords
phosphor
lighting unit
unit according
white light
metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2001/002849
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German (de)
English (en)
French (fr)
Inventor
Dieter Bokor
Andries Ellens
Günter Huber
Franz Zwaschka
Frank Jermann
Manfred Kobusch
Michael Ostertag
Wolfgang Rossner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram GmbH
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Patent Treuhand Gesellschaft fuer Elektrische Gluehlampen mbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH, Patent Treuhand Gesellschaft fuer Elektrische Gluehlampen mbH filed Critical Osram Opto Semiconductors GmbH
Priority to EP01956394A priority Critical patent/EP1305833A1/de
Priority to US10/311,722 priority patent/US7064480B2/en
Priority to KR1020037000852A priority patent/KR100920533B1/ko
Priority to JP2002516838A priority patent/JP5419315B2/ja
Publication of WO2002011214A1 publication Critical patent/WO2002011214A1/de
Anticipated expiration legal-status Critical
Priority to US11/259,776 priority patent/US7239082B2/en
Priority to US11/725,815 priority patent/US7821196B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
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    • C09K11/58—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing copper, silver or gold
    • C09K11/582—Chalcogenides
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    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7794—Vanadates; Chromates; Molybdates; Tungstates
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7795—Phosphates
    • C09K11/7796—Phosphates with alkaline earth metals
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/886—Chalcogenides with rare earth metals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • the invention is based on a lighting unit with at least one LED as a light source according to the preamble of claim 1. It is in particular a luminescence conversion LED emitting in the visible or white, based on an LED emitting primarily in the near UV or short-wave blue.
  • LEDs that emit white light are currently mainly produced by the combination of a Ga (ln) N LED emitting in the blue at about 460 nm and a yellow emitting YAG: Ce 3+ phosphor (US Pat. No. 5,998,925 and EP 862 794).
  • these white light LEDs are of limited use for general lighting purposes because of their poor color rendering due to the lack of color components (especially the red component). Instead, attempts are also being made to combine primarily blue-emitting LEDs with several phosphors in order to improve the color rendering, see WO 00/33389 and WO 00/33390.
  • BaMgAl 10 O 17 : Eu 2+ or ZnS: Ag + are known as inorganic phosphors; as a blue-green component ZnS: Cu + , or (Zn, Cd) S: Cu + , or ZnS: (Al, Cu) + ; as red component Y 2 O 2 S: Eu 2+ .
  • a number of organic phosphors are also recommended. For white emitting sources of high light quality with small dimensions or as backlighting from e.g. B. LCDs, fluorescent lamps and incandescent lamps are not very suitable. OLEDs are more suitable for this, but the UV resistance of organic phosphors is poorer than that of inorganic phosphors. In addition, the manufacturing costs are higher.
  • Blue LEDs with the phosphor YAG: Ce 3+ (and garnets derived from them) are also suitable in principle, but there are disadvantages in the color locus setting: the color locus can only be selected to a limited extent in such a way that white light is produced which enables good color rendering, since the white color impression is primarily caused by the mixture of blue emission from the LED and yellow emission from the phosphor.
  • the disadvantage of fluorescent lamps and UN (O) LEDs is that UV energy is converted into visible light with poor energy efficiency: UV radiation (in fluorescent lamps 254 and 365 nm; in UV LEDs 300 - 370 nm) with a wavelength of z. B. 254 nm is converted into light with a wavelength of 450-650 nm. This means an energy loss of 40 to 60% with a theoretical quantum efficiency of 100%.
  • Organic phosphors are generally more difficult to produce than inorganic phosphors and, moreover, are generally too unstable to be used in light sources with a long service life (eg over 30,000 hours).
  • the invention is particularly advantageous in connection with the development of an LED emitting in the visible or white.
  • This LED can be produced by combining an LED emitting in near UV or very short-wave blue light (here collectively referred to as “short-wave”) with an emission wavelength between 370 and 430 nm and at least one of the phosphors listed below, which emits the radiation of the LED entirely or partially absorbed and even emitted in spectral ranges, the additive mixture of which with the light from the LED and / or other dyes gives white light with good color rendering or light with a desired color location, depending on the application, a single phosphor with the properties according to the invention may be sufficient it can also be combined with one or more other phosphors according to the invention or phosphors of other classes, for example of the YAG: Ce type.
  • the blue light of the LED cannot be used here (or can hardly be used), in contrast to the prior art, the longer-wave blue ( 430 to 480 nm) is used, but is suitable s
  • a primary radiation source whose emission is much closer to the wavelength at which the phosphors emit can significantly increase energy efficiency. For example, with a source that emits at 400 nm, the energy loss is reduced to only 12 to 39%.
  • the technical problem lies in the development and production of sufficiently efficient phosphors that can be excited in the spectral range between 370 nm and 430 nm and at the same time show suitable emission behavior.
  • a phosphor according to the invention is combined with a binder that is as transparent as possible (EP 862 794).
  • the phosphor completely or partially absorbs the light from the UV / blue light-emitting LED and emits it again broadband in other spectral ranges, so that an overall emission with the desired color location is produced. So far, there are hardly any phosphors that meet these requirements as well as the phosphors described here. she show a high quantum efficiency (typically 70%) and at the same time a spectral emission, which is perceived as bright due to the sensitivity of the eye.
  • the color locus can be set in a wide range.
  • the advantages of these phosphors also include their relatively easy, environmentally friendly producibility, their non-toxicity and their relatively high chemical stability.
  • the invention relates in particular to a lighting unit with at least one LED as a light source (light emitting diode), which generates special, specifically desired color tones (for example magenta) or which, for example, generates white light by using a primarily short-wave (i.e. UV to blue in the range from 370 to 430 nm) ) emitting radiation is converted into white by means of several phosphors: either by mixing the secondary radiation of a blue and yellow emitting phosphor or in particular by RGB mixture of three phosphors which emit red, green and blue. For particularly high demands on color rendering, more than three phosphors can also be combined.
  • a light source light emitting diode
  • special, specifically desired color tones for example magenta
  • white light by using a primarily short-wave (i.e. UV to blue in the range from 370 to 430 nm) ) emitting radiation is converted into white by means of several phosphors: either by mixing the secondary radiation of a blue and yellow emitting
  • one of the phosphors used according to the invention can also be combined with other phosphors already known for this use, such as, for example, SrS: Eu (WO 00/33390) or YAG: Ce (US Pat. No. 5,998,925).
  • a Ga (ln, Al) N LED is particularly suitable as the primary short-wave emitting LED, but also any other way of producing a short-wave LED with a primary emission in the range 370 to 430 nm.
  • the invention extends the spectral emission characteristics of LEDs by using other phosphors and their mixtures beyond the current state of knowledge (see Tables 1 to 3).
  • the selection of the phosphors and mixtures used can be made in such a way that, in addition to true-color white, other mixed colors with broadband emission are also generated.
  • the light emitted by the LED is absorbed by the mixture that contains phosphors. This mixture is either applied directly to the LED or dispersed in a resin or silicone or applied to a transparent disc over one LED or applied to a transparent disc over several LEDs.
  • the inventive step is that by using LEDs with emission wavelengths between 370 and 430 nm (invisible or barely visible deep blue) and the use of phosphors listed below, an improved spectral adjustment of the LED emission is made possible and any color locations can be set, with a higher energy efficiency than with conventional LEDs.
  • Inorganic phosphors that can be excited with a relatively long wavelength are hardly known at present. Surprisingly, however, it has been shown that there are a number of inorganic phosphors which are suitable for being efficiently excited with radiation having a peak emission wavelength of 370-430 nm. Typical half-value widths of the emission are 20 nm to 50 nm.
  • the absorption of the phosphors can be controlled by the selected structural parameters and chemical composition.
  • Such phosphors all have a relatively small band gap (typically around 3 eV) or they have a strong crystal field for the ion, which absorbs the UV / blue light emitted by the LED around 400 nm.
  • certain combinations of phosphors can be selected in the phosphor mixture.
  • the most suitable phosphor mixture therefore depends on the chosen target (color rendering, color location, color temperature) and the existing LED emission wavelength.
  • any phosphor that fulfills the conditions mentioned above is suitable for use.
  • Phosphors which emit efficiently and which can be excited or at least partially excited in the 370-430 nm region are listed in the following tables.
  • Tab. 1 describes suitable blue phosphors with a peak emission wavelength of 440 to 485 nm
  • Tab. 2 suitable green phosphors with a peak emission wavelength of 505 to 550 nm
  • Tab. 3 suitable red phosphors with a peak emission wavelength of 560 to 670 nm This makes it possible for the first time to manufacture LEDs with high efficiency, which are based on a short-wave emitting diode that excites several phosphors.
  • Table 1 Blue-emitting phosphors:
  • M s (PO 4 ) 3 (X): Eu 2+ with M at least one of the metals Ba, Ca alone or in
  • M * 3MgSi2O8: Eu2 + with M at least one of the metals Ba, Ca, Sr alone or in combination
  • M ** MgA110O17: Eu2 + with M ** at least one of the metals Eu, Sr alone or in combination with Ba (Ba fraction is preferably at most 75%);
  • Eu share in the activator Ak is preferably> 50%;
  • (Zn, Cd) S Ag + where Zn and Cd are only used in combination; Zn is preferably ⁇ Cd;
  • (Ml) 2 (M2) (BO3) 2: Eu2 + with Ml at least one of the metals Ba, Sr; and with M2 is at least one of the metals Mg, Ca; the proportion of Ba in the cation Ml is preferably at least 80%; the proportion of Mg in metal M2 is preferably at least 70%.
  • GalnN or GaN or GalnAlN is preferably used as the UV diode (primary radiation source). For example, it has a peak wavelength of 400 nm and a full width at half maximum of 20 nm.
  • the diode substrate is coated directly or indirectly with a suspension of three phosphors, each with an emission maximum in the red, green and blue spectral range. At least one of these phosphors is selected from Tables 1 to 3 and is combined either with known phosphors or with phosphors from the other tables.
  • the phosphor mixture is baked at about 200 ° C. A color rendering of typically 80 is thus achieved.
  • Figure 1 is a semiconductor device that serves as a light source (LED) for white light;
  • Figure 2 shows a lighting unit with phosphors according to the present
  • 3 to 17 show the emission spectrum of LEDs with different phosphor mixtures according to the present invention.
  • the light source is a semiconductor component (chip 1) of the InGaN type with a peak emission wavelength of 420 nm and a half-width of 25 nm with a first and second electrical connection 2, 3, which is embedded in an opaque basic housing 8 in the region of a recess 9 , One of the connections 3 is connected to the chip 1 via a bonding wire 14.
  • the recess has a wall 17 which serves as a reflector for the blue primary radiation of the chip 1.
  • the recess 9 is filled with a potting compound 5, the main components of which are an epoxy casting resin (80 to 90% by weight) and phosphor pigments 6 (less contains less than 15% by weight). Other small proportions include methyl ether and Aerosil.
  • the phosphor pigments are a mixture.
  • the first conversion phosphor is selected from Table 1.
  • the second phosphor is selected from Tab. 2 and the third from Tab. 3.
  • FIG. 2 shows a section of a surface light 20 as a lighting unit. It consists of a common carrier 21 onto which a cuboid outer housing 22 is glued. Its top is provided with a common cover 23.
  • the cuboid housing has cutouts in which individual semiconductor components 24 are accommodated. They are UV-emitting light-emitting diodes with a peak emission of 380 nm.
  • the conversion to white light takes place by means of conversion layers which are seated directly in the casting resin of the individual LEDs, as described in FIG. 1, or layers 25 which are attached to all surfaces accessible to UV radiation are. These include the inner surfaces of the side walls of the housing, the cover and the base part.
  • the conversion layers 25 consist of three phosphors which emit in the yellow, green and blue spectral range using at least one of the phosphors according to the invention from Tables 1 to 3.
  • Tab. 6 shows 15 exemplary embodiments of specific combinations of phosphors from Tab. 4 in connection with a primary light source (UV-LED) with an emission peak in the range 370 to 420 nm.
  • UV-LED primary light source
  • the individual UV diodes are summarized in Tab. 5, in which the emission peak and the color location (as far as defined, that is from 380 nm) of the individual diodes is given.
  • the UV diode does not provide any part in the secondary emission, also because of the strong absorption by the three phosphors.
  • the diode delivers a small proportion of the blue, which increases with increasing wavelength, in addition to the blue phosphor. This proportion appears in Table 5 as an additional fourth contribution.
  • the particularly suitable phosphors for use in three-color mixtures under primary irradiation at 370 to 420 nm are the blue-emitting phosphors No. 2, 4 and 6, and the green-emitting phosphors 8, 9, 10, 13, 15, 16, 17 and 18 as well as the red-emitting phosphors 26, 28 and 29.
  • Exemplary embodiment no. 15 uses a blue-emitting diode with 420 nm peak emission with such a high intensity that it can fully replace the blue phosphor and only requires two additional phosphors in the green and red.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Planar Illumination Modules (AREA)
PCT/DE2001/002849 2000-07-28 2001-07-27 Beleuchtungseinheit mit mindestens einer led als lichtquelle Ceased WO2002011214A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP01956394A EP1305833A1 (de) 2000-07-28 2001-07-27 Beleuchtungseinheit mit mindestens einer led als lichtquelle
US10/311,722 US7064480B2 (en) 2000-07-28 2001-07-27 Illumination device with at least one led as the light source
KR1020037000852A KR100920533B1 (ko) 2000-07-28 2001-07-27 광원으로서 적어도 하나의 ｌｅｄ를 구비한 조명 장치
JP2002516838A JP5419315B2 (ja) 2000-07-28 2001-07-27 光源として少なくとも１つのｌｅｄを備えた照明ユニット
US11/259,776 US7239082B2 (en) 2000-07-28 2005-10-27 Illumination device with at least one LED as the light source
US11/725,815 US7821196B2 (en) 2000-07-28 2007-03-20 Illumination device with at least one LED as the light source

Applications Claiming Priority (2)

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DE10036940A DE10036940A1 (de) 2000-07-28 2000-07-28 Lumineszenz-Konversions-LED
DE10036940.5 2000-07-28

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US11/259,776 Continuation US7239082B2 (en) 2000-07-28 2005-10-27 Illumination device with at least one LED as the light source

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US7239082B2 (en) 2007-07-03
EP1970970B1 (de) 2016-12-07
JP2012235140A (ja) 2012-11-29
EP1305833A1 (de) 2003-05-02
US7821196B2 (en) 2010-10-26
US7064480B2 (en) 2006-06-20
EP1970970A2 (de) 2008-09-17
CN1214471C (zh) 2005-08-10
US20060055315A1 (en) 2006-03-16
US20070170842A1 (en) 2007-07-26
KR20030017644A (ko) 2003-03-03
EP1970970A3 (de) 2008-10-01
JP2004505470A (ja) 2004-02-19
TW531904B (en) 2003-05-11
KR100920533B1 (ko) 2009-10-08
JP5419315B2 (ja) 2014-02-19
US20040056256A1 (en) 2004-03-25
DE10036940A1 (de) 2002-02-07
CN1444775A (zh) 2003-09-24

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