TW531904B - Illuminating unit having at least one LED as light source - Google Patents
Illuminating unit having at least one LED as light source Download PDFInfo
- Publication number
- TW531904B TW531904B TW090118276A TW90118276A TW531904B TW 531904 B TW531904 B TW 531904B TW 090118276 A TW090118276 A TW 090118276A TW 90118276 A TW90118276 A TW 90118276A TW 531904 B TW531904 B TW 531904B
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- Taiwan
- Prior art keywords
- light
- emitting
- lighting unit
- combination
- patent application
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 109
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 239000000203 mixture Substances 0.000 claims description 33
- 229910052788 barium Inorganic materials 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 17
- 230000003595 spectral effect Effects 0.000 claims description 16
- 229910052712 strontium Inorganic materials 0.000 claims description 15
- 229910052791 calcium Inorganic materials 0.000 claims description 13
- 229910052765 Lutetium Inorganic materials 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 7
- 229910052771 Terbium Inorganic materials 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910016066 BaSi Inorganic materials 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 241000209094 Oryza Species 0.000 claims 4
- 235000007164 Oryza sativa Nutrition 0.000 claims 4
- 235000009566 rice Nutrition 0.000 claims 4
- 229910052717 sulfur Inorganic materials 0.000 claims 4
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 claims 3
- 229910052711 selenium Inorganic materials 0.000 claims 3
- 229910052714 tellurium Inorganic materials 0.000 claims 3
- 241000272201 Columbiformes Species 0.000 claims 2
- 238000005242 forging Methods 0.000 claims 2
- 239000013589 supplement Substances 0.000 claims 2
- 241000239290 Araneae Species 0.000 claims 1
- 229910003668 SrAl Inorganic materials 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 150000001768 cations Chemical class 0.000 claims 1
- 230000008595 infiltration Effects 0.000 claims 1
- 238000001764 infiltration Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 101150064272 ELL3 gene Proteins 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007739 conversion coating Methods 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/58—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing copper, silver or gold
- C09K11/582—Chalcogenides
- C09K11/584—Chalcogenides with zinc or cadmium
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
- C09K11/641—Chalcogenides
- C09K11/642—Chalcogenides with zinc or cadmium
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
- C09K11/665—Halogenides with alkali or alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7732—Halogenides
- C09K11/7733—Halogenides with alkali or alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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- C09K11/7734—Aluminates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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- C09K11/77342—Silicates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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- C09K11/774—Borates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/778—Borates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7794—Vanadates; Chromates; Molybdates; Tungstates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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- C09K11/7795—Phosphates
- C09K11/7796—Phosphates with alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/886—Chalcogenides with rare earth metals
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
- Electroluminescent Light Sources (AREA)
Description
531904 五、發明說明(1 ) 技術領域 根據申請專利範圍第1項之基本槪念,本發明體係至少 有一個發光二極體作爲光源的照明單元。它主要涉及到一 個主(primary)發射近似紫外線光的發光二極體爲主的一 種發射可見光或白色光的能發光變換的發光二極體。 技術背景 發光二極體發射出白色光主要由一個約在460nm時發射 藍色的Ga ( In) N-發光二極體和一種發射黃色的YAG:Ce3 + 發光材料(美國專利號5 998 925和EP專利號862 794 ) 組合時產生的。然而,這種白色光發光二極體用於一般照 明用途時由於其缺少顏色成分(主要是缺少紅色成分)因 而其彩色再現性差,故只能有限地使用。曾經揭示過代之 以上述發光二極體的,而是將主發射藍色的發光二極體與 若干種發光材料組合,以期改善彩色再現性,見專利W0 00/33389 m WO 00/33390° 此外,眾所周知所謂的有機發光二極體也能實現發光二 極體發射白色光或通過將單色的發光二極體與相關的色混 合組成聯接來發射白色光。這裏。多數是使用一種紫外線 發光二極體(發射峰値在300〜370nm之間)’它借助于多 種發光材料,大多數是3個,在紅色、綠色和藍色光譜範 圍內發射(RGB-混合色)變換成白色光(wo 98 39 805, W0 98 39 807和 W0 97 48 138)。已知,作爲藍色顏色 成分的是相當於有機發光材料的BaM2A1i〇〇i7:Eu2+或 531904 五、發明說明(2) ZnS : Ag+,作爲藍綠色顏色成分的是ZnS : Cu+,或(Zn,Cd )S:Cu+,或ZnS: ( A1,Cu ) +,作爲紅色顏色成分的是 Y202S :Eu2+。此外,還推薦了 一個系列的有機發光材料。 鑒於在發光二極體和發光材料組合時和/或發光材料的 穩定性的原因和/或由於幾何尺寸造成的限制,這一技術 水平在能量效率方面存在若干明顯的缺陷。 螢光燈和白熾燈不太適合於小尺寸的、光質量高的發射 白色的光源或亦不適合作爲例如發光二極體的背景照明。 有機發光二極體較(OLED)較爲適合於這一用途,不過有機 發光材料的紫外線(UV )穩定性與無機發光材料相比較差。 此外’生產成本也高。儘管用發光材料YAG:Ce3+ (和由此 導出來的石榴石)的藍色發光二極體原則上同樣也適用, 但是在色譜的位置調節程度上存在著不足:只有以受限制 的方式才能如此來選擇色譜的位置,使之產生的白色光可 能有好的彩色再現性,因爲白色的彩色印象最初是通過發 光二極體的藍色發射和發光材料的黃色發射混合後產生的 。螢光燈和紫外線-表面發光二極體的缺點在於紫外線的 能量是以較差的能量效率被轉換成可見光:例如一個波長 爲2 5 4 n m的紫外線-幅射(在螢光燈中爲2 5 4和3 6 5 n m ;在 紫外線發光二極體中爲300 - 370nm)則被轉換成波長爲 450 - 650nm的光。這意味著當理論的量子效率爲1〇〇%時, 能量損失爲40〜60%。 通常,與無機發光材料相比,有機發光材料更難於生產 531904 五、發明說明(3) ,此外,要使有機發光材料能用於長的使用壽命的光源中 (例如超過30000小時),它仍是極不穩定的。 發明的槪述 本發明的目的在於製造一種至少有一個發光二極體的光 源、符合申請專利範圍第1項基本槪念的照明單元,其特 點是具有高的效率。 這一目的可通過申請專利範圍第1項之描述特徵來體現 。在從屬申請專利範圍中可看到特別有利的佈置。 本發明在與開發的一種發射可見光或白色光的發光二極 體相結合時是特別有利。這種發光二極體可以生產出來, 這是將一個發射接近紫外線或波長很短的藍色光(此處槪 括地稱爲“短波的”)的發光二極體與一個在370和 430nm之間的發射波長和至少一種在下文所述發光材料組 合。這種發光材料可以完全地或部分地吸收發光二極體的 輻射並甚至在光譜範圍內發射,它與發光二極體的光線和 /或其他色素的添加劑混合可產生具有良好彩色再現性的 白色光或具有所要求色譜位置的光。分別根據用途,僅用 一種具有按照發明特性的發光材料也就夠用了。也許,這 種發光材料可以與一種或幾種其他的按照本發明的發光材 料或其他等級的發光材料,例如YAG:Ge型組合。在此, 發光二極體的藍色光不能(或幾乎不能)被直接應用;因 與當前應用長波藍色(430至480nm)的技術水平不同, 而是只適用於原始(最初)激發發光材料。
531904 五、發明說明(4) 一個主輻射光源,其發射非常接近于發光材料發射的波 長’可以顯著提高能量效率。對一個在400nm時發射的光 源來說,例如其損失就可以降低到1 2至39%。 重要的技術問題是在於開發和生產足夠有效的發光材料 ,這些發光材料在3 70nm至43 Onm的光譜範圔內是可激發 的而且同時顯示出適當的發射特性。 爲了獲得彩色的或白色的 照本發明的發光材料與一種 透明的粘合劑結合(EP 862 分地吸收發光二極體發射的 寬帶地在其他光譜範圍內發 譜色空間位置的總發射。迄 發光材料這樣好地滿足這些 料顯示出高的量子效率(典 人眼對這種發射的回應感覺 以在一個很大的範圍內調整 優點的還有,比較容易生產 對高的化學穩定性。 本發明尤其涉及到至少具 照明單元,它能產生特殊的 紅)或例如白色的光,此時 圍3 78至488是紫外線至藍 材料轉換爲白色,或者通過 發光二極體,也許可將一種按 或多種其他發光材料用盡可能 794 )。發光材料完全地或部 紫外線/藍色光的光並又將它 射,以至於產生具有所要求光 今爲止幾乎不存在能象所述的 要求的發光材料。這種發光材 型的爲70%)並同時能散發, 是明亮的。光譜色空間位置可 。此外,屬於這種發光材料的 並具有保護環境,無毒性和相 有一個發光二極體作爲光源的 專門要求的色調(例如鹼性品 發射一種原始短波(因此在範 色),其輻射借助于多種發光 發射藍色和黃色的發光材料的 531904 五、發明說明(5) 次級輻射混合,尤其是通過發射紅色、綠色和藍色的三種 發光材料的RGB -混合。當對彩色再現性有特別高的要求時 也可以將以上三種發光材料組合。爲了這一目的也可以將 按照本發明所使用的發光材料之一與其他對於這種用途已 經熟知的發光材料,例如SrS :Eu ( W0 00 / 3 3 390 ) HUO YAG:Ce ( US 5 998 925 )組合。 一種Ga ( I η,A 1 ) N -發光二極體適合於作爲主短波發射 的發光二極體,但是任一其他的途徑也能生產具有在 3 7 0nm至430nm範圍內主發射短波的發光二極體。 本發明將通過應用超越當代認識水平的其他發光材料及 其混合物(見表1至表3 )來擴大發光二極體的光譜發射 特性。也是,這樣所選擇使用的發光材料及其混合物,使 得除了不褪色的白色外,還能產生其他具有寬帶發射的混 合色◦一般說來,發光二極體發射的光將由包含發光材料 的混合物所吸收。這種混合物可直接澱積在發光二極體上 或者色彌散在一種樹脂或矽樹脂(矽酮)上,或澱積在發 光二極體上面的一塊透明的板上或澱積在幾個發光二極體 上面的一塊透明的板上。 其獨創性在於,通過使用發射波長在3 70nm和430nm之 間的(看不見或剛剛能看得見的深藍色)發光二極體和下 文列舉的發光材料,有可能使發光二極體的發射具有更佳 光譜配合和可任意調整光譜的色譜位置,確切地說,與傳 統的發光二極體相比,具有較高的能量效率。 531904 五、發明說明(6) 目前’幾乎不知道有相對長波的能被激發的無機發光材 料。然而。令人驚異的是,有那麼一些無機的發光材料適 合於用峰値發射波長370 - 430nm幅射時還能有效地被激發 。發射的典型半値寬度在20nm至50nm之間。發光材料的 吸收可以通過選擇的結構參數和化學成分來控制。這些發 光材料全都有一個較小的禁帶寬度(典型的約爲3 eV)或 者它們對於離子有著一個強晶體場,它可吸收發光二極體 所發射的400nm紫外線/藍色-光。 根據所選擇的發光二極體發光波長( 370〜430nm)和所 要求的彩色再現性和/或所要求的光譜色譜位置,可以在 發光材料混合物中選擇與一定的發光材料組合。因此,最 適合的發光材料混合取決於所選擇的目的(彩色再現性, 色空間位置,色溫)和存在的發光二極體-發射波長。 滿足上述條件的任何一種發光材料原則上適合於這一用 途。能有效地發射的並在370〜430nm的範圍內能有效地激 發的或至少是部分地被激發的發光材料被列舉在下面的表 中。表1列出了發射峰値波長爲440至48 5nm的適合的藍 色發光材料,表2列出了發射峰値波長爲505至5 50nm的 適合的綠色發光材料,表3列出了發射峰値波長爲560至 67 0nm的適合的紅色發光材料。因此首次有可能生產高效 率的發光二極體,它建立在一個短波發射的二極體的基礎 上,能激發好幾種發光材料。
531904 五、發明說明(7) 表1 :發射藍色的發光材料 M3 ( P04) 3 ( X) :Eu2+式中少爲〆種金屬Ba,Ca 中單獨的一種或與Sr組合(最好sr的成分最高爲75%) ,在此,X =至少爲一種鹵素F或ci ; M*3MgSi 208:Eu2+ 式中 M =至少爲一種金屬 Ba,Ca,Sr 中單獨的一種或與下面的組合 Ba5S i 04B r 6 : Eu2 + 29^^12^19 - 29*EU2 + Ysi〇2N:Ce3 + (Sr,Ba ) 2 A16Om :Eu2 + (Ba,Sr ) 2 ( Mg,Ca ) B〇3 :Eu2 + CaF2:Eu2 + Bao wEuo.ogOo wAlH。hOuiEu2* M**MgAl 10017 :Eu2+ 式中 M * ^至少爲 Eu,S r 中單獨 的一種金屬或與Ba的組合物(最好是Ba的成分最高 75%); MLn2S4:Ce3+ 式中 M =至少爲 Ca,。 〇 r c Ln =至少爲La,Y中的一種金屬。 表2 :發射綠色(和藍綠色)的發光# _ 一種金屬,且 S r A 12〇4 : Eu2 + MB03: (Ce3+’ Tb3+) ’ 式中 M =至少 Se,Gd,Lu 中單 獨的一種金屬或與Y的組合物(特別是,Y的成分<40% ) ;在組合中金屬Ce和Tb共同起活化作用(特別是在Ce 531904 五、發明說明(8) 的成分>Tb的成分時); M2Si05: (Ce3+,Tb3+)式中 M =至少爲 γ,Gd,Lu 中單 獨的一種金屬;金屬Ce和Tb共同起活化作用(最好是, Ce的成分〉Tb的成分); MN*2S4: Ak 式中 M =至少爲 Zn,Mg,Ca,Sr,Ba 中的一 種金屬,N =至少爲A1,Ga,In中的一種金屬;而Ak =或者 是Eu2+,Mn2的組合(最好是,Eu的成分〉Μη的成分); 或者是與Ce3+,Tb3 +共同組合’(最好是,Ce的成分〉Tb 的成分); SrBaSi04:Eu2 + Ba〇.82Al 12〇 1 8 0 8 2 : Eu2 + Ba〇.82Al · 12〇丨8。82 : Eu2+,Mn2 + Y5 ( Si04) 3 N:Ce2 + Ca8Mg(Si04) 4Cl2:Ak2 +式中 Ak = Eu2 +單獨或與 Mn2 組合 (最好是,Eu的成分>2XMn的成分), S r 4A 1 ! 4〇25 : Eu2 + (Ba,Sr) MgAL1()017:Ak,式中 Ak= Eu2 +或者與 Ce3 +和 Tb3 +組合或者與Mn2 +組合;最好是Eu的成分>50% ; Sr6BP5O20:Eu2 + Sr2P207: ( Eu2+ ; Tb3+)與 Eu 和 Tb 組合 BaSi 205:Eu2 + 袠3 ··發射紅色的(橙紅色至深紅色)發光材料 Ln 202 St : Ak3+ 式中Ln =至少爲金屬Gd,La,Lu中單獨 -10- 531904 五、發明說明(1〇) 下文根據幾個結構示例詳細敘述本發明。 圖式簡單說明: 第1圖是一個半導體光電元件,作光源(發光二極體 )用於白色光; 第2圖是根據本發明所述發光材料的照明單元; 第3至1 7圖是按照本發明有不同發光材料混合的發光 二極體的發射光譜。 圖紙的說明 在使用白色發光二極體時與一個Gal nN-晶片組合在一起 ,例如採用類似美國專利US 5 998 925中 述的結構。 弟1圖詳細地表不了追類採用白色光光源的結構。光源是 一個INGaN型半導體光電元件(晶片1),它具有420nm 的峰値發射波長和25nm的一半値寬度,其第1個和第2 個電源接頭2,3在一個不透光的主機殼8中被嵌入插口 9 的範圍內。接頭中的一個接頭3是通過一根壓焊絲1 4與 晶片1連接。插口有一個壁面1 7,它被用作晶片1藍色的 主輻射用的反射器。插口 9被充滿了塡料5,它包括作爲 主要成分的、環氧樹脂(含量爲80至9 0%)和有色發光材 料6 (含量小於15%)。其他微量成分歸結爲其中有甲基 醚和一種高度分散的矽膠。有色發光材料是一種混合物。 從表1可選出第1種變換-發光材料。第2種發光材料可 從表2中選擇,而第3種發光材料可從表3中選擇。 第2圖表不了作爲照明單兀的平面光源2 0的斷面。它 12- 531904 五、發明說明(11) 是由一個共用的支架21組成,在支架上粘貼上一個長方 六面體形狀的外部殼體22。其上端裝一個共用的蓋板23 。長方六面體形狀的殼體內有空隙,在其中安裝了各個半 導體元件24。這些元件是發射紫外線的、其峰値發射爲 3 80nm的發光二極體。借助於類似第1圖所述那樣的直接 在各個發光二極體的澆注樹脂中的變換塗層或塗覆在所有 可以接近紫外線-輻射的表面上的塗層25實現白色光的轉 換。屬於此的還有殼體側壁內表面,蓋板和底部的內表面 。轉換層25是由三種發光材料組成,這些發光材料在利 用表1至表3所列的至少是一種根據本發明的發光材料在 光譜範圍內發射黃色、綠色和藍色的光。 表4歸納了所硏究的發光材料組合的具體結構示例。這 裏是按照本發明將在所有三種光譜範圍內的適用以及已知 的發光材料綜合列表。第1欄內說明了試驗編號,第2欄 內爲發光材料的化學公式,第3欄內是發光材料的發射 峰値。第4和5欄內是x和y光譜色空間的位置座標。第 6和I 7欄內說明了反射性和量子效率(分別按百分比計) 〇 第14號發光材料(Sr,Ba) Sl〇4:Eu2 +在綠色範圍內是 寬帶的,這裏因此不需單獨的紅色成分。 -13- 531904 五、發明說明(12) 表4 : 編號化學式 發射峰値 X y R(%) Q.E(%) 1 Ba3MgSi2〇3:Eu(5%) 440 0.16 0.07 42 50 2 (Ba,Sr)5(P04)Cl:Eu2+ 448 0.15 0.05 48 76 3 ZnS:Ag 452 0.14 0.07 76 63 4 (Ba,Sr)MgAli〇017:Eu2+ 454 0.15 0.08 49 83 5 SrMgAl10017:Eu2+ 467 0.15 0.19 63 92 6 EuMgAl10017:Eu2+ 481 0.17 0.31 35 63 7 ZnS:Ag? 506 0.19 0.43 22 48 8 Ba〇i74Eu〇i〇8Al12〇i8.82 , 507 0.22 0.43 52 87 9 Ca8Mg (S i 〇4) 4C12 : Eu2+ 508 0.17 0.6 34 67 10 ZnS:Cu 510 0.2 0.46 16 55 11 BaMgA 1 i〇〇i7: Eu2+, Mn2+ 513 0.14 0.21 64 95 12 Ba0 · 72Eu〇 _ 05Mn0.05A1 〗2〇i 8 · 82 514 0.21 0.48 71 97 13 BaMgA 110O17: Eu2+, Mn2+ 515 0.14 0.65 39 88 14 (SrBa)Si04:Eu2+ 517 0.23 0.61 54 15 SrAl204:Eu2+ 523 0.29 0.58 28 70 16 ZnS:Cu,Al 534 0.31 0.61 29 83 17 YB03:Ce3+Jb3+(9.5%,5%) 545.5 0.34 0.59 30 69 18 Ca8Mg (S i 〇4) 4C12: Eu2+, Mn2+ 550 0.38 0.57 30 61 19 S r ]. 95Ba〇. 〇3Eu〇 . 〇2S i 04 563 0.44 0.53 21 20 Sr2P2〇7:Eu2+,Mn2+(..) 570 0.32 0.27 63 46 21 ZnS:Cu,Mn 585 0.49 0.45 19 44 22 Gd2Mo06:Eu3+(20%) 610 0.66 0.34 50 23 Y2^〇. 98^°0.02〇6 : Ell3+ 612 0.61 0.38 68 37 24 Y2W08:Eu3+,Bi3+(7.5%,0.5%) 612 0.64 0.36 52 25 Lu2W08:Eu3+,Bi3+(7.5%,l%) 612.5 0.64 0.36 65 26 SrS:Eu2+(2%) 616 0.63 0.37 52 91 27 La2Te06:Eu3+(%) 617 0.66 0.34 76 28 (La,Y)202S:Eu3+(..) 626 0.67 0.33 84 73 29 Sr2Si5N6:Eu2+(10%) 636 0.64 0.36 12 55 30 (Ba,Ca,Sr)MgSi2〇8:Eu,Mn 657 0.39 0.16 47 52 -14- 531904 五、發明說明(13) 最後,在表6中列舉了表4中15種發光材料與具有峰 値發射範圍370至420nm的主光源(紫外線_發光二極體 )組合的結構示例。表5綜合了各個紫外線發光二極體, 其中也說明了各個二極體的發射峰値和色譜位置(如果要 明確的話,從380nm起)。 爲了更好地對照起見,表6的第1欄至第4欄再次插入 了表4中的資料。第5欄至第10欄記錄了在不同波長時 各種發光材料對激發的可接受性,也就是說對發射峰値在 3 70至420nm時,每10nm爲一段的紫外線-發光二極體作 了系統記錄。接下來的1 5欄說明了一個RGB -混合的具體 例子(用Exl至Exl5來標示),因此是短波的發光二極 體(第2欄說明所選擇的發射峰値)與三種由紅色、綠色 和藍色光譜範圍組成的發光材料的組合。在每一欄中給出 的數位表示在光譜發射中的相對組份。 對於一個在380ηηι以下的超短波紫外線-二極體,紫外 線-二極體不產生次級發射,這也由於三種發光材料強烈 的吸收作用所致。 從380nm的主發射起,二極體產生較少的、隨著波長的 增加而提高在藍色的和附加到藍色的發光材料中的組分。 這種組分在表5中被作爲附加的第4個部分出現。 在表6的最後兩列中記錄了整個系列測得的色譜位置點 的色譜位置座標,它在色譜表中覆蓋了白色色調的一個很 -15- 531904 五、發明說明(14) 大的範圍。這一系列的光譜分佈表示在第3圖(相當於
Exl—)、至第1 7圖中(相當於Eu 5 )。 經證明在3 70至42Onm時主發射下三種顏色混合時,發 射藍色的發光材料2、4和6號,發射綠色的發光材料8、 9、1()、13、15、16和18號以及發射紅色的發光材料26 、28和29號是特別適用的發光材料。 編號」5結構例子應用一個具有發射峰値420nm的發射 藍色的二極體’它有很高的強度,以致能完全代替藍色的 發光材料並只需要綠色和紅色兩種補充的發光材料。 表5 元件符號對照表 1 晶片 2,3 接頭 5 塡料 6 發光材料 8 主機殻 9 插口 14 壓焊絲 17 壁面 20 平面光源 21 支架 22 外部殻體 23 蓋板 24 半導體元件 25 轉換層 編號 發射 X y 紫外線1 370 紫外線2 380 0.2 0.14 紫外線3 390 0.19 0.09 紫外線4 400 0.18 0.05 紫外線5 410 0.18 0.03 紫外線6 420 0.17 0.02 -16- 531904
Claims (1)
- 531904 補充丨六、申請專利範圍 第90 1 1 8276號「具有至少一種LED光源之照明單元」專 利案 (9 1年1 0月修正) τ\申請專利範圍: 1. 一種至少有一個作爲光源的發光二極體的照明單元 ,此時發光二極體在光譜範圍370至430nm的範圍 內發射主輻射(峰値波長),這種輻射部分地或完 全地被變換成較長波長之輻射,其是藉由三種受到 發光二極體主輻射之在藍色、綠色和紅色光譜範圍 內發射的發光材料所達成,因而形成白色光,其特 徵爲,這種變換至少借助於一種在440至485nm時 以波長峰値發射藍色的發光材料並借助於一種在 505至5 50nm時以波長峰値發射綠色的發光材料和 借助於一種在5 60至670nm時以波長峰値發射紅色 的發光材料來實現,此時,這三種發光材料中至少 有一種來自下述材料中之一, M3 ( P〇4) 3 ( X ) :Eu2+式中M =至少爲一種金屬Ba ,Ca中單獨的一種或與Sr組合(最好Sr的成分最 高爲75% ),在此,χ =至少爲一種鹵素F或C1 ; M*3MgSi 208:Eu2+式中Μ =至少爲一種金屬Ba,Ca ,S r中單獨的一種或與下面的組合 Ba5Si04Br6:Eu2 + Ba129Al12〇19。29:Eu2 + Ys i02N : Ce3 + 531904、申請專利範圍 (Sr,Ba ) 2 Al6〇n : Eu2 + (Ba,Sr ) 2 ( Mg,Ca ) B〇3 :Eu2 + CaF2:Eu2 + Bao uEuo ogOo wAlH。hO^Eu M**MgAll〇〇17:Eu2+ 式中 M * * =至少爲 Eu,S r 中 單獨的一種金屬或與Ba的組合物(最好是Ba的成分 最高75%); MLn2S4:Ce3+式中M =至少爲Ca,Sr中的一種金屬 ’且Ln =至少爲La,Y中的一種金屬; S r A 1 204 : Eu2 + MB03 : ( Ce3+,Tb3 + ),式中 M =至少 Se,Gd,Lu 中單獨的一種金屬或與γ的組合物(特別是,γ的成 分<4 0%);在組合中金屬Ce和Tb共同起活化作用( 特別是在Ce的成分>Tb的成分時); M2Si05 : ( Ce3+,Tb3 + )式中 M =至少爲 γ,Gd,Lu 中單獨的一種金屬;金屬Ce和Tb共同起活化作用( 最好是,Ce的成分>了1)的成分); MN*2S4:Ak 式中 14二至少爲211,1^,〇3,31‘,:63 中的一種金屬,N =至少爲Al,Ga,In中的一種金屬 ;而Ak =或者是Eu2+,Mn2的組合(最好是,Eu的成 分〉Μη的成分);或者是與Ce3+,Tb3 +共同組合,( 最好是,Ce的·成分>1^的成分); SrBaSi04:Eu2 + 531904 六、申請專利範圍Ba0 82Al12〇i8。82:Eu2 + B a 0 8 2 A 1 12 〇 18。8 2 : E u2 + ’ Μ η2 + Υ5 ( Si〇4) 3 N:Ce2 + Ca8Mg ( Si04 ) 4C12 : Ak2 +式中 Ak = Eu2 +單獨或與 Mn2 組合(最好是,Eu的成分>2 X Μη的成分); S r4A 1 m〇25 : Eu2 + (B a,S r ) M g A L 〗〇 0 i 7 : A k,式中 A k = E u 2 + 或者與 Ce3 +和Tb3 +組合或者與Mn2 +組合;最好是Eu的成分 >50% ; S r 6BP5〇2〇: Eu2 + Sr2P207: ( Eu2+ ; Tb3+)與 Eu 和 Tb 組合 BaSi 205 :Eu2+ ; Ln202 S t : Ak 3+ 式中 Ln =至少爲金屬 Gd,La,Lu 中單獨的一種或與Y組合(最好是,Y的成分最高爲 40%;特別是La的成分至少爲10%);式中St=至少 爲元素S,Se,Te中的一種,而Ak =單獨的Eu或與 B i組合; Ln2Wm06:Ak3+ 式中 Ln =至少爲金屬 Y,Gd,La, Lu中的一種,Wm =至少爲元素W,Mo,Te的一種;式 中Ak =單獨的Eu或與Bi組合; (Zn,Cd ) S : Ag+ 式中Zn和Cd只能組合使用, 最好Ζ η的成分< C d的成分; Mg28Ge7.5〇3sF 1〇 :Mn4 + 531904 六、申請專利範圍 SX2_PL0L: Eu2+ ,Mn2 + M3MgSi 208:Eu2+,Mn2+ 式中 至少爲金屬 Ca,Ba ,S r中的一種,應該指出,在這裏活化材料總是取 代此主導陽離子的一部分(金屬,尤其是一種鑭石 Ln),以 Mmjuo.wS 取代 MS:Eu ( 5%)。 2. 如申請專利範圍第1項之照明單元,其中,在利用三 種分別發出藍光,綠光及紅光之發光材料時發光二 極體發射白色的輻射。 3. 如申請專利範圍第1項之照明單元,其中,以Ga ( In,Al) N爲主的一個發光二極體被用來作爲主輻射 光源。 4·如申請專利範圍第1項之照明單元,其中,利用一種 藍色發光材料產生白色光:M5 ( P04 ) 3 ( X ) :Eu2 +式; 中M =至少爲Ba,Ca中的一種金屬或與Sr的組合物 ,其中,X =至少爲F或C1中的一種鹵素; 或使用一種藍色的發光材料: M* 3MgS i 308 : Eu2 + + 式中 M =至少爲 Ba,Ca,S r 中 的一種金屬或其組合物; 或使用一種藍色的發光材料: M**MgAl10O17:Eu2+ 式中 至少爲 Eu,Sr 中 的一種金屬或與Ba的組合物。 5.如申請專利範圍第1項之照明單元,其中,利用以卞 之一種綠色發光材料產生白色光: 531904 六、申請專利範圍 S r A 12〇4 : Eu2 + 或利用一種綠色發光材料 Ba〇.82Ali2〇i8,82:Eu ,Mn 或利用一種綠色發光材料 Ca8Mg ( Si〇4) 4C12:Eu2+ ,Mn2 + 或利用一種綠色的發光材料 BaMgAl1()017:(帶有 Ce3+,Tb2 +或帶有 Mn2+ 的 Eu)。 6.如申請專利範圔第1項之照明單元,其中,利用紅 色發光材料產生白色光: Ln 202SSt : Ak3+ 式中 Ln =至少爲 Gd,La,Lu 中單 獨的一種金屬或與Y之組合物;式中S t =至少爲元素 Se,Te中的一種,而Ak =僅是Eu單獨的組成或是與 B i的組合物; 或利用一種紅色發光材料產生白色光: Sr2P2〇7: Ak3+ ,式中 Ak =至少是 Eu,Μη 中的一 種金屬。 7·如申請專利範圍第1項之照明單元,其中,爲了產 生白色光,其發射的主輻射波長範圍在370〜42Onm 之間’須使用M5 ( P04) 3 ( X) :Eu2 +此種藍色發光 材料’式中M =至少爲Ba,Ca中的一種金屬或與Sr 的組合物,χ =至少爲F或Cl中的一種鹵素;或是一 種發光材料; 式中!=至少爲Eu,Sr中的 M**MgAl10〇17:Eu2 531904 六、申請專利範圍 一種金屬或與B a的組合物。 8.如申請專利範圍第1項之照明單元,其中,爲了產生 白色光,其發射的主輻射波長範圍在380nm以內,須 使用M*3MgSi 208:Eu2 +此種藍色發光材料,式中至 少爲B a,C a,S r中單獨的一種金屬或組合物。 9·如申請專利範圍第1項之照明單元,其中,爲了產生 白色光,其發射的主輻射波長範圍在37〇至42〇nm之 間,須使用SrAl 204:Eu2 +此種綠色發光材料, 或利用一種綠色發光材料Ca8Mg(Si〇4) 4 C12:Eu2 + ’ Mn2 +產生白色光 或利用一種綠色發光材料Sr4Al14025:Eu產生白色光 或利用一種綠色發光材料BaMgAl 1Q017: Ce3+,Tb3+, Eu3+,Mn2 +產生白色光。 10.如申請專利範圍第1項之照明單元,其中,爲了產生 白色光,其發射的主輻射波長範圍在39〇nm以內,須 使用 Ba〇.82Al 1 20 1 8,8 2: ( Bu2 +,Mn2 +)此種綠色發光材料 〇 1L如申請專利範圍1項之照明單元,其中,爲了產生白 色光,其發射的主輻射波長範圍在380nm以內,須使 用L η 2 0 2 S t : A k3 +紅色發光材料, 式中Ln =至少爲Gd,La,Lu中單獨的一種金屬或 與Y的組合物;S t=至少爲S,Se,Te中的一種元素 ’而Ak =單獨的Eu或與Bi的組合物;531904 六、申請專利範圍 或使用一種紅色發光材料Si:2P207: Ak2+ Ak =至少 爲Eu,Μη中的一種金屬。 12. 如申請專利範圍第1項之照明單元,其中,爲了產生 白色光,其發射的主輻射波長範圍在370〜400nm之間 ,須使用MMgS i 208 : Eu,Μη此種紅色發光材料,式中 Μ =至少爲Ba,Ca,Sr中的一種金屬。 13. 如申請專利範圍第1項之照明單元,其中,照明單元 是一個發光轉換-發光二極體,其發光材料直接地或 間接地與晶片接觸。 14. 如申請專利範圍第1項之照明單元,其中,照明單元 是發光二極體的一種陣列。 15. 如申請專利範圍第8項之照明單元,其中,至少有一 種發光材料佈置在發光二極體陣列之前的一個光學裝 置上。 531904 ▲ φ /〇 (^ I華截« 口mwocvlissscoBmn π®ε城 (£u)8o)u!i2u(l>jlQ)^A 08Z § αωω G0< 〇8ε531904§ OJ 08寸 09Z (米账)瞰鹪 OS 匾寸姝 08CO 531904® 9派 (米搬)瞰鸹 z •· 531904 ▲089 凾9蛛 (米账)111κ趔 ooos 000寸 0OOZ. 制 锻 08CO 531904 q/sffo μ /2\ InmmMOBZ OS 09S 08t 08ε ml g (米账)111K趔531904 月/y曰 修正補充® 8姝 (米账)峭鹩 OSN089os § 0COCO 531904 ▲ 今/年m月曰雖充I§z 089 §s 0 吞 ® 6姝(米账)瞰舆1 531904 A mi〇n'SQmi• · ί*· (米锻)¥鸹 OOONOSos 02.oooco 531904i ® 14城 (米账)蝤鸹 ocos 08吋 缌 補充I 08Z οοοε 53190401莩镯*ecvll 城 (米账)111K鸽531904®CO1,婶 (米账)瞰瑶 08Z 0B9 OS 0浮 Μ 缌 ^ § 531904 ▲ f 'X iri」 >•'々ί089 08S 09寸 OCQZ m寸 I, g(米烺)¥键 缌丄莉 οοοε 53190408Ζ OSogLO08 寸 08ε ® 91撕(米账)111K鸽531904 ▼ 年 It ifoooco I 08卜 ® 9L 姝' (米账)111K趔 OS M 缌 i 531904 tnT 孽镯« 渗 補,0CO9 (米账)蝤键 OS 000寸 08ε _
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- 2001-07-27 US US10/311,722 patent/US7064480B2/en not_active Expired - Lifetime
- 2001-07-27 KR KR1020037000852A patent/KR100920533B1/ko active IP Right Grant
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TWI481061B (zh) * | 2004-04-16 | 2015-04-11 | Rhodia Chimie Sa | 散發白光之發光二極體 |
Also Published As
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US20040056256A1 (en) | 2004-03-25 |
US20060055315A1 (en) | 2006-03-16 |
KR100920533B1 (ko) | 2009-10-08 |
JP2012235140A (ja) | 2012-11-29 |
CN1444775A (zh) | 2003-09-24 |
CN1214471C (zh) | 2005-08-10 |
EP1970970A3 (de) | 2008-10-01 |
JP5419315B2 (ja) | 2014-02-19 |
KR20030017644A (ko) | 2003-03-03 |
US7064480B2 (en) | 2006-06-20 |
EP1305833A1 (de) | 2003-05-02 |
EP1970970A2 (de) | 2008-09-17 |
EP1970970B1 (de) | 2016-12-07 |
JP2004505470A (ja) | 2004-02-19 |
US7239082B2 (en) | 2007-07-03 |
DE10036940A1 (de) | 2002-02-07 |
US20070170842A1 (en) | 2007-07-26 |
WO2002011214A1 (de) | 2002-02-07 |
US7821196B2 (en) | 2010-10-26 |
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