US8178361B2 - Magnetic sensor and manufacturing method therefor - Google Patents

Magnetic sensor and manufacturing method therefor Download PDF

Info

Publication number
US8178361B2
US8178361B2 US10/584,666 US58466607A US8178361B2 US 8178361 B2 US8178361 B2 US 8178361B2 US 58466607 A US58466607 A US 58466607A US 8178361 B2 US8178361 B2 US 8178361B2
Authority
US
United States
Prior art keywords
film
forming
giant magnetoresistive
thick film
channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US10/584,666
Other languages
English (en)
Other versions
US20080169807A1 (en
Inventor
Hiroshi Naito
Hideki Sato
Yukio Wakui
Masayoshi Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005077010A external-priority patent/JP4984408B2/ja
Priority claimed from JP2005088828A external-priority patent/JP4734987B2/ja
Priority claimed from JP2005091616A external-priority patent/JP2006278439A/ja
Priority claimed from JP2005091617A external-priority patent/JP4984412B2/ja
Priority claimed from JP2005098498A external-priority patent/JP4972871B2/ja
Priority claimed from JP2005131857A external-priority patent/JP4984424B2/ja
Priority claimed from JP2005350487A external-priority patent/JP4961736B2/ja
Application filed by Yamaha Corp filed Critical Yamaha Corp
Assigned to YAMAHA CORPORATION reassignment YAMAHA CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAITO, HIROSHI, OMURA, MASAYOSHI, SATO, HIDEKI, WAKUI, YUKIO
Publication of US20080169807A1 publication Critical patent/US20080169807A1/en
Priority to US13/459,644 priority Critical patent/US9054028B2/en
Publication of US8178361B2 publication Critical patent/US8178361B2/en
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49075—Electromagnet, transformer or inductor including permanent magnet or core

Definitions

  • the present invention relates to magnetic sensors and manufacturing methods therefor, and in particularly to small-size magnetic sensors and manufacturing methods therefor, in which three or more giant magnetoresistive elements are arranged on a single substrate so as to detect the intensity of a magnetic field in three axial directions.
  • Patent Application No. 2005-77010 (filing date: Mar. 17, 2005), Patent Application No. 2005-91616 (filing date: Mar. 28, 2005), Patent Application No. 2005-88828 (filing date: Mar. 25, 2005), Patent Application No. 2005-131857 (filing date: Apr. 28, 2005), Patent Application No. 2005-350487 (filing date: Dec. 5, 2005), Patent Application No. 2005-91617 (filing date: Mar. 28, 2005), and Patent Application No. 2005-98498 (filing date: Mar. 30, 2005), the contents of which are incorporated herein by reference.
  • Japanese Unexamined Patent Application Publication No. 2004-6752 discloses a magnetic sensor in which three or more giant magnetoresistive elements are arranged on a single substrate so as to detect the intensity of a magnetic field in three axial directions.
  • the magnetic sensor disclosed in the aforementioned paper is designed such that channels are formed on a silicon substrate, Z-axis giant magnetoresistive elements are arranged on slopes of channels, and X-axis giant magnetoresistive elements and Y-axis giant magnetoresistive elements are arranged on a planar surface of the silicon substrate, thus reducing the overall size thereof.
  • a three-axial magnetic sensor in which elongated projections composed of silicon oxide are formed, Z-axis giant magnetoresistive elements are arranged on slopes of the elongated projections, and X-axis giant magnetoresistive elements and Y-axis giant magnetoresistive elements are arranged on a planar surface of the silicon substrate, is known.
  • a magnetic sensor is formed in such a way that a thick film formed on a semiconductor substrate is subjected to treatment so as to form a plurality of channels in parallel;
  • Z-axis sensors are realized by a plurality of giant magnetoresistive elements, which are constituted using magneto-sensitive elements formed on slopes of channels and bias magnets for electrically connecting magneto-sensitive elements in series;
  • X-axis sensors and Y-axis sensors are realized by a plurality of giant magnetoresistive elements, which are arranged at prescribed positions on a planar surface of the thick film.
  • a planation layer realizing planation by covering a wiring layer of a semiconductor substrate is formed; a passivation film is formed on the planation layer; a thick film is formed on the passivation film; a resist film is formed on the thick film; the resist layer is partially removed; the resist layer is subjected to heat treatment so as to make side surfaces thereof slope; the resist film and thick film are subjected to etching with an etching selection ratio of 1:1 so as to form a plurality of channels in the thick film; bias magnets forming giant magnetoresistive elements are formed on a planar surface of the thick film as well as slopes, top portions, and bottom portions of channels; a giant magnetoresistive element film is formed; the semiconductor substrate in which the giant magnetoresistive element film is formed is arranged in proximity to a magnet array and is then subjected to heat treatment; the giant magnetoresistive element film is partially removed by etching; magneto-sensitive elements forming giant magnetoresistive elements are formed
  • the passivation film can be constituted by an upper layer and a lower layer.
  • the planation layer is partially removed so as to make vias and pads be exposed; the upper layer of the passivation film is removed from the vias and pads; the resist film is subjected to etching, and then the thick film remaining in the center of the vias as well as the lower layer of the passivation film are removed so as to make conductive portions of the vias be exposed; after the formation of bias magnets, a wiring film connecting between the bias magnets and the conductive portions of the vias is formed; and after the formation of the protection film, the thick film covering the pads and the lower layer of the passivation film are removed so as to make the conductive portions of the pads be exposed.
  • a plurality of channels are formed in the resist film before the formation of a plurality of channels in the thick film. That is, after the formation of the resist film, a mold having a plurality of projections corresponding to a plurality of channels formed in the thick film is pressed against the resist film so as to form a plurality of channels therein.
  • a photomask having a fine pattern in which the number of channels per unit area is gradually increased from the center to both ends of the thick film, is arranged opposite to the resist film, which is then subjected to exposure and development, thus forming channels in the resist film.
  • a third aspect of the present invention after the heat treatment of the resist film, reactive ion etching is performed under high ion etching conditions on the resist film and thick film, thus forming a plurality of channels in the thick film.
  • an insulating film is formed using deposition of silicon oxide on the thick film by way of the high-density plasma CVD method; a plurality of projections having linear ridgelines are formed at prescribed parts of the insulating film; then, the insulating film having a plurality of projections and the thick film are subjected to etching under high ion etching conditions, thus forming a plurality of channels in the thick film, whereby the thick film remaining in vias and pads is reduced in thickness.
  • a prescribed inclination angle is applied to each of slopes of channels by easy etching control; hence, it is possible to form giant magnetoresistive elements having good characteristics.
  • an etching stopper film is formed between the thick film and the semiconductor substrate in the magnetic sensor. Specifically, an insulating film is formed between the thick film and the passivation film and is used as an etching stopper in execution of etching.
  • each of slopes of channels is formed by an upper-side first slope and a lower-side second slope, wherein the second slope is greater than the first slope in terms of the inclination angle, and magneto-sensitive elements of giant magnetoresistive elements are formed on the second slope.
  • giant magnetoresistive elements are formed selectively on the channels having prescribed shapes. Because, the peripheral shapes of the channels become uncertain due to the difficulty of uniformly executing plasma etching, and this makes it difficult to realize the desired planation and inclination angle with respect to the peripheral portions and center portions of the channels.
  • a first dummy slope is formed in at least one of the channels; and no giant magnetoresistive element is formed on the first dummy slope.
  • a second dummy slope is formed in proximity to the terminal end of the channels in longitudinal directions.
  • the terminal ends of the slopes of the channels formed in the thick film on the semiconductor substrate are rounded so as to realize uniformity in the slope shape and inclination angle.
  • giant magnetoresistive elements for detecting the intensity of a magnetic field in X-axis, Y-axis, and Z-axis directions are mounted on a single semiconductor substrate, thus realizing a small-size three-axial magnetic sensor. It is possible to realize a magnetic sensor having good performance because the thick film formed on the semiconductor substrate is subjected to treatment so as to form channels, and magneto-sensitive elements of giant magnetoresistive elements are selectively formed on slopes of channels having good planation.
  • a giant magnetoresistive element film is deposited on wiring composed of a magnet film with respect to a recessed end of a via; hence, it is possible to avoid the occurrence of breakdown of wiring at corners of a step portion. In addition, it is possible to realize giant magnetoresistive elements having high stability against a magnetic field.
  • the manufacturing method of the aforementioned magnetic sensor it is possible to form channels and to form giant magnetoresistive elements on slopes of the channels by way of a series of processes. Furthermore, it is possible to form vias and pads by way of a series of processes. Thus, it is possible to efficiently produce a magnetic sensor.
  • a plurality of channels are formed in advance in the resist film on the semiconductor substrate. This makes it possible to easily form channels having prescribed shapes in the thick film by way of etching; and it is possible to improve the planation with respect to the slopes of the channels. Thus, it is possible to form a Z-axis sensor having a prescribed sensing direction and a good sensitivity.
  • FIG. 1 A plan view showing giant magnetoresistive elements forming an X-axis sensor, a Y-axis sensor, and a Z-axis sensor arranged on a semiconductor substrate of a magnetic sensor in accordance with a first embodiment of the present invention.
  • FIG. 2 A plan view showing an example of the internal structure of a giant magnetoresistive element.
  • FIG. 3 A plan view showing the structure of giant magnetoresistive elements forming the Z-axis sensor.
  • FIG. 4 A cross-sectional view showing a method of forming giant magnetoresistive elements forming the Z-axis sensor.
  • FIG. 5 A perspective view showing an example of the layout of giant magnetoresistive elements forming the Z-axis sensor.
  • FIG. 6 A perspective view showing another example of the layout of giant magnetoresistive elements forming the Z-axis sensor.
  • FIG. 7 Line-connection diagrams showing line connections between giant magnetoresistive elements with respect to the X-axis sensor, Y-axis sensor, and Z-axis sensor.
  • FIG. 8 A cross-sectional view showing the structure of a via in the magnetic sensor of the first embodiment.
  • FIG. 9 Cross-sectional views showing a manufacturing method of the magnetic sensor of the first embodiment.
  • FIG. 10 Cross-sectional views showing the manufacturing method of the magnetic sensor of the first embodiment subsequently to FIG. 9 .
  • FIG. 11 Cross-sectional views showing the manufacturing method of the magnetic sensor of the first embodiment subsequently to FIG. 10 .
  • FIG. 12 Cross-sectional views showing the manufacturing method of the magnetic sensor of the first embodiment subsequently to FIG. 11 .
  • FIG. 13 A plan view and cross-sectional views showing the relationships between giant magnetoresistive elements and polarities of magnets of a magnet array used in a pinning process in the manufacturing method of the magnetic sensor of the first embodiment.
  • FIG. 14 A cross-sectional view showing the direction of a line of magnetic force exerted on giant magnetoresistive elements in the pinning process shown in FIG. 13( b ).
  • FIG. 15 A plan view showing the structure of giant magnetoresistive elements forming a Z-axis sensor in accordance with a second embodiment.
  • FIG. 16 A cross-sectional view showing a method of forming giant magnetoresistive elements forming the Z-axis sensor shown in FIG. 15 .
  • FIG. 17 Cross-sectional views showing a manufacturing method of a magnetic sensor in accordance with the second embodiment, which correspond to FIG. 10 used in the first embodiment.
  • FIG. 18 Cross-sectional views showing processes for forming projections and channels in a zigzag manner in a channel forming region by way of a stamper method shown in FIG. 17( c ).
  • FIG. 19 Cross-sectional views showing the manufacturing method of the magnetic sensor of the second embodiment subsequently to FIG. 17 .
  • FIG. 20 Cross-sectional views showing the manufacturing method of the magnetic sensor of the second embodiment subsequently to FIG. 19 .
  • FIG. 21 A conceptual drawing showing a photomask having numerous fine patterns used for the formation of channels in a resist film on a semiconductor substrate, and a graph showing a pattern ratio.
  • FIG. 22 A graph showing the relationship between the pattern ratio and the resist thickness after exposure.
  • FIG. 23 A cross-sectional view diagrammatically showing the shape of a channel formed using the photomask.
  • FIG. 24 Cross-sectional views showing a method of forming a plurality of projections having slopes in an insulating film of a channel forming region by way of the high-density plasma CVD method in accordance with a third embodiment of the present invention.
  • FIG. 25 A cross-sectional view showing a method of forming giant magnetoresistive elements forming a Z-axis sensor in accordance with a fourth embodiment of the present invention.
  • FIG. 26 Cross-sectional views showing a manufacturing method of a magnetic sensor in accordance with the fourth embodiment of the present invention, which show processes to be performed subsequently to FIG. 9 .
  • FIG. 27 Cross-sectional views showing the manufacturing method of the magnetic sensor of the fourth embodiment subsequently to FIG. 26 .
  • FIG. 28 Cross-sectional views showing the manufacturing method of the magnetic sensor of the fourth embodiment subsequently to FIG. 27 .
  • FIG. 29 Cross-sectional views showing the manufacturing method of the magnetic sensor of the fourth embodiment subsequently to FIG. 28 .
  • FIG. 30 Cross-sectional views showing the manufacturing method of the magnetic sensor of the fourth embodiment subsequently to FIG. 29 .
  • FIG. 31 A plan view showing giant magnetoresistive elements forming a Z-axis sensor mounted on a magnetic sensor in accordance with a fifth embodiment of the present invention.
  • FIG. 32 A cross-sectional view taken along line IV-IV in FIG. 31 .
  • FIG. 33 An enlarged cross-sectional view of an area encompassed by dotted lines in FIG. 32 .
  • FIG. 34 Cross-sectional views showing a manufacturing method of a magnetic sensor of a fifth embodiment, which is performed subsequently to FIG. 10 .
  • FIG. 35 Cross-sectional views showing the manufacturing method of the magnetic sensor of the fifth embodiment subsequently to FIG. 34 .
  • FIG. 36 A plan view showing giant magnetoresistive elements forming a Z-axis sensor mounted on a magnetic sensor in accordance with a sixth embodiment of the present invention.
  • FIG. 37 A cross-sectional view taken along line IV-IV in FIG. 36 .
  • FIG. 38 Cross-sectional views showing a manufacturing method of the magnetic sensor of the sixth embodiment.
  • FIG. 39 Cross-sectional views showing the manufacturing method of the magnetic sensor of the sixth embodiment subsequently to FIG. 38 .
  • FIG. 40 Cross-sectional views showing the manufacturing method of the magnetic sensor of the sixth embodiment subsequently to FIG. 39 .
  • FIG. 41 Cross-sectional views showing the manufacturing method of the magnetic sensor of the sixth embodiment subsequently to FIG. 40 .
  • FIG. 42 A plan view showing the structure of giant magnetoresistive elements forming a Z-axis sensor mounted on a magnetic sensor in accordance with a seventh embodiment of the present invention.
  • FIG. 43 A perspective view showing an example of the layout of giant magnetoresistive elements forming the Z-axis sensor in the seventh embodiment.
  • FIG. 44 A perspective view showing another example of the layout of giant magnetoresistive elements forming the Z-axis sensor in the seventh embodiment.
  • FIG. 45 A conceptual drawing showing that end portions of slopes of channels formed in a thick film are consecutively rounded in a manufacturing method of the magnetic sensor of the seventh embodiment.
  • the present invention realizes downsizing and improves a detection accuracy with respect to a magnetic sensor using giant magnetoresistive elements, and it will be described by way of various embodiments in conjunction with the attached drawings.
  • FIG. 1 diagrammatically shows a magnetic sensor in accordance with a first embodiment of the present invention, and it shows the layout regarding a plurality of giant magnetoresistive elements arranged on a semiconductor substrate.
  • reference numeral 1 designates a semiconductor substrate composed of silicon, in which semiconductor integrated circuits such as drive circuits and signal processing circuits, and wiring layers are formed in advance with respect to the magnetic sensor, and on which a planation film, a passivation film, and a silicon oxide film (not shown) are sequentially formed so as to form a thick film.
  • An X-axis sensor 2 , a Y-axis sensor 3 , and a Z-axis sensor 4 are arranged on the thick film of the semiconductor substrate 1 , thus making it possible to detect the intensity of an external magnetic field in three axial directions.
  • the X-axis sensor 2 has sensitivity in an X-axis direction
  • the Y-axis sensor 3 has sensitivity in a Y-axis direction
  • the Z-axis sensor 4 has sensitivity in a Z-axis direction.
  • the X-axis sensor 2 is composed of four giant magnetoresistive elements 2 a , 2 b , 2 c , and 2 d ;
  • the Y-axis sensor 3 is composed of four giant magnetoresistive elements 3 e , 3 f , 3 g , and 3 h ;
  • the Z-axis sensor 4 is composed of four giant magnetoresistive elements 4 i , 4 j , 4 k , and 4 l.
  • the X-axis sensor 2 and the Y-axis sensor 3 are arranged on the planar surface of the thick film of the semiconductor substrate 1 , and the Z-axis sensor 4 is arranged on the slopes of channels formed in the thick film. Details will be described later.
  • the giant magnetoresistive elements 2 a and 2 b are arranged to adjoin together approximately in the center of the semiconductor substrate 1 , and the giant magnetoresistive elements 2 c and 2 d are arranged to adjoin together in the end portion of the semiconductor substrate 1 . That is, the giant magnetoresistive elements 2 c and 2 d are distant from and arranged opposite to the giant magnetoresistive elements 2 a and 2 b.
  • the giant magnetoresistive elements 3 e and 3 f are arranged to adjoin together in one end portion of the semiconductor substrate 1 , and the giant magnetoresistive elements 3 g and 3 h are arranged to adjoin together in the other end portion of the semiconductor substrate 1 . That is, the giant magnetoresistive elements 3 e and 3 f are distant from and arranged opposite to the giant magnetoresistive elements 3 g and 3 h.
  • the giant magnetoresistive elements 4 k and 4 l are arranged in proximity to the giant magnetoresistive elements 3 e and 3 f , and the giant magnetoresistive elements 4 i and 4 j are slightly distant from and arranged adjacent to the giant magnetoresistive elements 2 a and 2 b.
  • the arrangement of the aforementioned giant magnetoresistive elements forming the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 is determined based on the following rules.
  • dotted lines LA, LB, and LC are imaginary lines for equally dividing the semiconductor substrate 1 into four sections in the longitudinal direction; and a dotted line LD is an imaginary line for equally dividing the semiconductor substrate 1 in the width direction.
  • SA designates an intersecting point between the dotted lines LA and LD, and SB designates an intersecting point between the dotted lines LB and LD.
  • the giant magnetoresistive elements 2 a and 2 b and the giant magnetoresistive elements 2 c and 2 d are arranged symmetrically with respect to the intersecting point SA.
  • the giant magnetoresistive elements 3 e and 3 f and the giant magnetoresistive elements 3 g and 3 h are arranged symmetrically with respect to the intersecting point SA.
  • the giant magnetoresistive elements 4 i and 4 j and the giant magnetoresistive elements 4 k and 4 l are arranged symmetrically with respect to the intersecting point SB.
  • each giant magnetoresistive element is constituted of four magneto-sensitive elements 5 and three bias magnets 6 for electrically connecting them in series.
  • the magneto-sensitive elements 5 form a main part of the giant magnetoresistive element, and they have thin band-like plane shapes.
  • the magneto-sensitive elements 5 are arranged in parallel in the longitudinal direction of channels formed in the semiconductor substrate 1 .
  • the magneto-sensitive element 5 has a pinned layer whose magnetization direction is fixed and a free layer whose magnetization direction varies in response to an external magnetic field. Specifically, it is constituted of multilayered laminated metals including a conductive spacer layer, a pinned layer, and a capping layer, which are sequentially laminated on a free layer.
  • the free layer has a three-layered structure including an amorphous magnetic layer composed of cobalt-zirconium-niobium, a magnetic layer composed of nickel-iron, and a magnetic layer composed of cobalt-iron.
  • the spacer layer is composed of copper;
  • the pinned layer has a two-layered structure including a ferromagnetic layer composed of cobalt-iron and a diamagnetic layer composed of platinum-manganese; and the capping layer is composed of tantalum.
  • the bias magnets 6 electrically connect the four magneto-sensitive elements 5 in series, and they apply a bias magnetic field to the magneto-sensitive elements 5 , which are thus adjusted in magnetic characteristics.
  • the bias magnet 6 is constituted of laminated metals having a two-layered structure including a cobalt-platinum-chrome layer and a chrome layer.
  • Each of the giant magnetoresistive elements 2 a , 2 b , 2 c , 2 d , 3 e , 3 f , 3 g , and 3 h forming the X-axis sensor 2 and the Y-axis sensor 3 arranged on the planar surface of the semiconductor substrate 1 is constituted of the four magneto-sensitive elements 5 and the three bias magnets 6 as shown in FIG. 2 , wherein the terminal ends of the externally-arranged two magneto-sensitive elements 5 , which are not connected to the bias magnets 6 , are respectively connected to wiring layers 7 , which are connected to vias (not shown).
  • FIGS. 3 to 5 show the detailed structure of the giant magnetoresistive elements 4 i and 4 j within four giant magnetoresistive elements forming the Z-axis sensor 4 .
  • the detailed structure of the other giant magnetoresistive elements 4 k and 4 l is the same as the aforementioned one; hence, it is not described.
  • FIG. 3 is a plan view showing the giant magnetoresistive elements 4 i and 4 j ; and FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3 .
  • FIG. 5 is a perspective view diagrammatically showing the layout of the magneto-sensitive elements 5 and bias magnets 6 included in the giant magnetoresistive elements 4 i and 4 j.
  • reference numeral 11 designates a thick film composed of silicon oxide, which is deposited on the semiconductor substrate 1 .
  • the thick film 11 is partially subjected to cutting so as to form four V-shaped channels 8 .
  • Each channel 8 is a thin recess having prescribed dimensions, in which the depth ranges from 3 ⁇ m to 8 ⁇ m, the length ranges from 200 ⁇ m to 400 ⁇ m, and the slope width ranges from 3 ⁇ m to 16 ⁇ m.
  • the angle between the slope and the surface of the thick film 11 ranges from 30° to 80° and is preferably set to 70°.
  • FIG. 4 shows that each channel 8 has planar slopes; in the actual manufacturing process, the slope is slightly curved in an outside direction (i.e., the upper side of the semiconductor substrate 1 ).
  • FIG. 4 shows the four channels 8 , in which the magneto-sensitive elements 5 forming eight giant magnetoresistive elements are arranged at the center planar positions of the eight slopes adjoining together in the longitudinal direction.
  • a bias magnet 6 is formed to extend from the magneto-sensitive element 5 , which is formed on one slope of the channel 8 , to the magneto-sensitive element 5 , which is formed on the other slope of the channel 8 , via the bottom, so that the magneto-sensitive elements 5 adjoining together in the channel 8 are electrically connected together.
  • a bias magnet 6 is formed to extend from the magneto-sensitive element 5 , which is formed on the slope of one channel 8 , to the magneto-sensitive element 5 , which is formed on the slope of the adjacent channel 8 , via the top portion, so that the magneto-sensitive elements 8 in the adjacent channels 8 are electrically connected together.
  • the four magneto-sensitive elements 5 are electrically connected together by way of the three bias magnets 6 .
  • the externally-arranged two magneto-sensitive elements 5 are not connected to the bias magnets 6 but are connected to the wiring layers 7 , which are connected to vias (not shown).
  • the wiring layers 7 are formed using the magnet film forming the bias magnets 6 of the giant magnetoresistive elements. Thus, it is possible to simultaneously form the bias magnets 6 and the wiring layers 7 in each giant magnetoresistive element.
  • the sensing directions of the giant magnetoresistive elements forming the X-axis sensor 2 and the Y-axis sensor 3 cross at a right angle with the magneto-sensitive elements 5 in the longitudinal direction, and they are set in parallel with the surface of the semiconductor substrate 1 .
  • the pinning direction of the magneto-sensitive elements 5 and the magnetization direction of a bias magnetic field of the bias magnets 6 are inclined with respect to the longitudinal direction of the magneto-sensitive elements 5 by an angle ranging from 30° to 60°, preferably by an angle of 45°, and they are in parallel with the surface of the semiconductor substrate 1 .
  • the sensing directions of the giant magnetoresistive elements 4 i and 4 j included in the Z-axis sensor 4 cross at a right angle with the longitudinal direction of the magneto-sensitive elements 5 , and they are each set in parallel with the slopes of the channels 8 and in an upward direction.
  • the pinning direction of the magneto-sensitive elements 5 and the magnetization direction of the bias magnets 6 are inclined with respect to the longitudinal direction of the magneto-sensitive elements 5 by an angle ranging from 30° to 60°, preferably by an angle of 45°, and they are set in parallel with the slopes of the channels 8 and in an upward direction.
  • the sensing directions of the giant magnetoresistive elements 4 k and 4 l included in the Z-axis sensor 4 cross at a right angle with the longitudinal direction of the magneto-sensitive elements 5 , and they are set in parallel with the slopes of the channels 8 and in a downward direction.
  • the pinning direction of the magneto-sensitive elements 5 and the magnetization direction of a bias magnetic field of the bias magnets 6 are inclined with respect to the longitudinal direction of the magneto-sensitive elements 5 by an angle ranging from 30° to 60°, preferably by an angle of 45°, and they are in parallel with the slopes of the channels 8 and in a downward direction.
  • a magnet array is positioned close to the upper side of the semiconductor substrate, which is then subjected to heat treatment for three to five hours at a temperature ranging from 260° C. to 290° C.
  • This method is similar to the conventionally-known pinning process.
  • both the sensing direction and pinning direction of the giant magnetoresistive element cross at a right angle with the longitudinal direction of the magneto-sensitive elements 5 and are also set in parallel with the surface of the semiconductor substrate.
  • the sensing direction differs from the pinning direction; hence, it is possible to improve the stability against a high magnetic field.
  • FIG. 7 shows line-connection methods with respect to the four giant magnetoresistive elements 2 a , 2 b , 2 c , and 2 d forming the X-axis sensor 2 , the four giant magnetoresistive elements 3 e , 3 f , 3 g , and 3 h forming the Y-axis sensor 3 , and the four giant magnetoresistive elements 4 i , 4 j , 4 k , and 4 l forming the Z-axis sensor 4 , wherein the four giant magnetoresistive elements included in each sensor are connected together by way of a bridge.
  • FIGS. 1 to 6 do not show that the overall surface of the semiconductor substrate 1 including all of the giant magnetoresistive elements forming the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 is covered with a passivation film composed of silicon nitride and a protection film composed of polyimide, by which it is protected from external environments.
  • FIG. 8 shows the structure of a via formed in the semiconductor substrate 1 , wherein reference numeral 21 a designates a conductive portion composed of aluminum forming the via.
  • the conductive portion 21 a is electrically connected to a wiring layer, which is formed therebelow.
  • the periphery of the surface of the conductive portion 21 a is covered with a planation film 22 and a first passivation film 23 as well as the thick film 11 .
  • the terminal surfaces of the thick film 11 are sloped surfaces.
  • the center of the surface of the conductive portion 21 a is covered with a wiring film 25 .
  • the wiring film 25 is connected to the aforementioned wiring layer 7 for the giant magnetoresistive elements. Similar to the wiring layer 7 , the wiring film 25 is formed using the magnet film forming the bias magnets 6 . Thus, it is possible to simultaneously form the wiring film 25 and the bias magnets 6 .
  • Step portions are formed in the wiring film 25 in proximity to the terminal portion of the thick film 11 . Due to the manufacturing process, there is a possibility that the wiring film 25 is reduced in thickness and may be broken at corners of the step portions. For this reason, a protective conductive film 26 is laminated to cover the step portions and the center portion.
  • the aforementioned giant magnetoresistive element film forming the magneto-sensitive elements 5 is used as the protective conductive film 26 .
  • the protective conductive film 26 it is possible to laminate the protective conductive film 26 on the wiring film 25 simultaneously with the formation of the magneto-sensitive elements 5 ; hence, it is possible to avoid the breakage of the wiring film 25 .
  • the via having the aforementioned structure is covered with a passivation film 27 composed of silicon oxide and a protection film 28 composed of polyimide, by which it is protected from external environments.
  • the magnetic sensor of the present embodiment functions as a small-size three-axial magnetic sensor in that the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 are arranged on a single semiconductor substrate 1 .
  • the magneto-sensitive elements 5 of the giant magnetoresistive elements are formed on the prescribed portions of the slopes of the channels 8 having good planation; hence, it is possible to produce a magnetic sensor having good sensitivity.
  • the protective conductive film 26 composed of the giant magnetoresistive element film is laminated on the wiring film 25 composed of the bias magnet film, thus avoiding breakage of the wiring film 25 at the corners of the step portions.
  • the pinning direction of the magneto-sensitive element 5 is inclined by an angle ranging from 30° to 60° with respect to the longitudinal direction, thus making it possible to produce a giant magnetoresistive element having stability against a high magnetic field.
  • FIGS. 9 , 10 , 11 , and 12 show cross-sectional views with regard to a via A, a pad B, and a channel forming region C in the manufacturing method of the magnetic sensor of the present embodiment.
  • a semiconductor substrate 1 That is, wiring layers and semiconductor integrated circuits such as drive circuits and signal processing circuits of the magnetic sensor are formed in advance on the semiconductor substrate 1 composed of silicon.
  • a planation film 31 is formed on the aforementioned semiconductor substrate 1 .
  • the planation film 31 is formed by sequentially laminating a silicon oxide film of 300 nm thickness by way of the plasma CVD (plasma chemical vapor deposition) method, as SOG film of 600 nm thickness, and a silicon oxide film of 50 nm thickness, which is formed by way of the plasma CVD method using the TEOS method, thus forming a planar insulating film.
  • plasma CVD plasma chemical vapor deposition
  • a first passivation film 32 (corresponding to the first passivation film 23 shown in FIG. 8) is formed on the overall surface of the semiconductor substrate 1 .
  • the first passivation film 32 is formed by sequentially laminating a silicon oxide film 33 of 250 nm thickness by way of the plasma CVD method and a silicon nitride film 34 of 600 nm thickness by way of the plasma CVD method.
  • the silicon nitride film 34 deposited on the conductive portion 21 a of the via A and the conductive portion 21 b of the pad B is removed by way of etching.
  • the silicon oxide film 33 is left, while the removing range of the silicon nitride film 34 is made smaller than the opening width of the planation film 31 .
  • the terminal portions of the planation film 31 are exposed in the openings of the via A and the pad B, thus preventing water content from being infiltrated into the wiring layer and semiconductor integrated circuits.
  • a thick film 35 of 5 ⁇ m thickness composed of silicon oxide is formed by way of the plasma CVD method.
  • the thick film 35 corresponds to the thick film 11 shown in FIGS. 4 and 8 , in which channels 8 are formed.
  • a resist film 36 of 3 ⁇ m thickness is formed on the overall surface of the thick film 35 . Thereafter, prescribed parts of the resist film 36 are removed by way of exposure and development, thus forming a prescribed resist pattern. Thus, channel regions are exposed with respect to the via A, pad B, and channel forming region C.
  • the remaining resist film 36 is subjected to heat treatment for ten minutes or so at a temperature of 150° C., thus dissolving the resist film 36 .
  • Surface tension of the solution which is produced by way of resist dissolution in heat treatment, causes the upper surface of the resist film 36 to rise upwardly, whereby the terminal surface is inclined simultaneously.
  • the resist film 36 is transformed into a plurality of projections having linear ridgelines in the channel forming region C, wherein the height of the cross-sectional shape reaches about 5 ⁇ m.
  • the resist film 36 and the thick film 35 are subjected to dry etching under the prescribed conditions in which the etching selection ratio between resist and silicon oxide becomes approximately one-to-one.
  • the dry etching is performed under the following conditions.
  • Etching gas mixed gas of CF 4 /CHF 3 /N 2 /O 2 , the mixing ratio of which is 60/180/10/100 sccm.
  • Electrode temperature 15° C.
  • the recessed areas of the via A and pad B are controlled so as not to become larger than the recessed area of the passivation film 32 . Thereafter, the resist film 36 remaining on the thick film 35 is removed.
  • FIG. 11( a ) a plurality of the channels 8 are formed in the channel forming region of the thick film 35 .
  • FIG. 11( b ) the thick film 35 and the silicon oxide film 33 covering the conductive portion 21 a of the via A are removed, thus making the conductive portion 21 a be exposed.
  • a magnet film used for the formation of the bias magnets 6 of the giant magnetoresistive elements is formed on the overall surface of the semiconductor substrate 1 by way of sputtering; then, unnecessary portions are removed by way of resist work and etching.
  • the bias magnets 6 are formed along the slopes of the channels 8 ; at the same time, the wiring film 25 is formed on the conductive portion 21 a of the via A, thus forming the wiring layer 7 connecting between the wiring film 25 and the bias magnets 6 of the giant magnetoresistive elements.
  • the magnet film is formed as a multilayered thin metal composed of Co—Cr—Pt, for example.
  • the wiring layer 7 corresponding to the bias magnets 6 of the giant magnetoresistive elements forming the X-axis sensor 2 and the Y-axis sensor 3 is formed on the planar surface of the thick film 35 as well.
  • the resist film having a prescribed pattern be subjected to heat treatment, thus inclining the terminal surfaces of the resist film.
  • the giant magnetoresistive element film forming the magneto-sensitive elements 5 of the giant magnetoresistive elements is formed on the overall surface of the semiconductor substrate 1 by way of sputtering. As described above, the giant magnetoresistive element film is formed as a multilayered thin metal.
  • the semiconductor substrate 1 is set up above a magnet array and is then subjected to heat treatment for three to five hours at a temperature ranging from 260° C. to 290° C., so that the giant magnetoresistive element film is subjected to a pinning process.
  • the details of the pinning process will be described later.
  • the giant magnetoresistive element film is subjected to resist work and etching, thus removing unnecessary portions therefrom.
  • the magneto-sensitive elements 5 are formed on the slopes of the channels 8 , thus completing the formation of the giant magnetoresistive elements. That is, it is possible to complete the production of the Z-axis sensor 4 .
  • the giant magnetoresistive element film is left on the wiring film 25 composed of the magnet film, which is formed in advance on the conductive portion 21 a of the via A, and is used as the protective conductive film 26 .
  • the structure of the via A shown in FIG. 8 it is possible to produce the structure of the via A shown in FIG. 8 .
  • the magneto-resistive elements 5 are formed on the planar surface of the thick film 35 as well, thus producing giant magnetoresistive elements. This completes the production of the X-axis sensor 2 and the Y-axis sensor 3 .
  • a passivation film 27 of 1 ⁇ m thickness composed of silicon nitride is formed by way of the plasma CVD method; and then the protection film 28 composed of polyimide is formed.
  • the protection film 28 and the passivation film 27 are removed from the pad B, thus forming a recess.
  • etching is performed using the protection film 28 as a mask, so that the passivation film 32 and the thick film 35 covering the conductive portion 21 b of the pad B are removed, thus making the conductive portion 21 b be exposed.
  • FIG. 13 shows the arrangement of magnets in the magnet array.
  • the magnet array is positioned above the surface of the semiconductor substrate 1 on which the giant magnetoresistive elements are formed.
  • FIG. 13( a ) shows the positional relationship between the giant magnetoresistive elements on the surface of the semiconductor substrate 1 and the magnets of the magnet array, wherein S and N represent polarities of magnets positioned opposite to the surface of the semiconductor substrate 1 .
  • FIG. 13( b ) shows the polarity and arrangement of the magnets in the cross section taken along a dotted line Q in FIG. 13( a ).
  • FIG. 13( c ) shows the polarity and arrangement of the magnets in the cross section taken along a dotted line R in FIG. 13( a ).
  • FIG. 14 is an enlarged view of FIG. 13( b ), wherein it shows the direction of a line of magnetic force exerted on a single giant magnetoresistive element.
  • the manufacturing method of the magnetic sensor of the present embodiment it is possible to form the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 on the single semiconductor substrate 1 , and it is possible to simultaneously produce the via A and pad B. Hence, it is possible to rapidly produce a small-size three-axial magnetic sensor by way of a series of processes.
  • the second embodiment is designed such that the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 are formed using giant magnetoresistive elements formed on the semiconductor substrate 1 ; hence, the same reference numerals of the first embodiment are used, and the duplicate description will be omitted.
  • FIGS. 15 and 16 show the giant magnetoresistive elements 4 i and 4 j of the Z-axis sensor 4 , wherein reference numerals are denoted with respect to slopes, bottoms, and top portions of the channels 8 adjoining together.
  • each channel 8 is a thin recess having prescribed dimensions, in which the depth ranges from 3 ⁇ m to 7 ⁇ m, the length ranges from 250 ⁇ m to 300 ⁇ m, and the slope width ranges from 3 ⁇ m to 8 ⁇ m.
  • An angle between the slope and the thick film 11 ranges from 30° to 80° and is preferably set to 70°.
  • FIG. 16 is shown such that the channel 8 has planar slopes; however, in the actual manufacturing process, the slope is curved externally (toward the upper side of the semiconductor substrate 1 ).
  • the magneto-sensitive element 5 is formed on a slope 8 a via the bias magnet 6 .
  • the magneto-sensitive element 5 formed on a slope 8 c which adjoins the slope 8 a via a bottom 8 b , is electrically connected to the magneto-sensitive element 5 formed on a slope 8 e , which adjoins the slope 8 c via a top portion 8 d , via the bias magnet 6 .
  • the magneto-sensitive element 5 is formed on a slope 8 g , which adjoins the slope 8 e via a bottom 8 f , via the bias magnet 6 .
  • the detailed structure of the magnetic sensor of the second embodiment is similar to that of the first embodiment shown in FIGS. 5 to 8 .
  • the thick film 35 of 5 ⁇ m thickness composed of silicon oxide is formed by way of the plasma CVD method.
  • a plurality of the channels 8 are formed using the thick film 35 .
  • the resist film 36 of 5 ⁇ m thickness is formed on the overall surface of the thick film 35 .
  • prescribed parts of the resist film 36 are removed by way of etching, thus making the via A and the pad B be exposed.
  • prescribed parts of the resist film 36 in the channel forming region C are pressed so as to form a consecutive zigzag shape by way of the stamper method. That is, it is possible to form a plurality of projections and channels, wherein the cross-sectional shape of each projection is roughly formed in a triangular shape and the top portion thereof is sharpened.
  • At least one pair of alignment marks are formed in advance on both ends of the semiconductor substrate 1 when an uppermost wiring layer is formed on the semiconductor substrate 1 .
  • resist is applied to the overall surface of the thick film 35 , thus forming the resist film 36 .
  • the resist film 36 is subjected to heat treatment for five minutes at a temperature of 120° C. This improves the adhesion between the thick film 35 and the resist film 36 , and this makes it possible to easily separate a mold, which is brought into contact with the resist film 36 , from the resist film 36 in the after-treatment.
  • a mold 37 137 is attached to a contact aligner (not shown); then, the semiconductor substrate 1 in which the resist film 36 is formed is positioned at a prescribed position of the contact aligner, so that the mold 137 is positioned opposite to the resist film 36 formed on the semiconductor substrate 1 .
  • positioning is performed between alignment marks, which are applied to the semiconductor substrate 1 , and alignment marks, which are applied to the mold 137 at prescribed positions opposite to the semiconductor substrate 1 , thus establishing precise positioning between the semiconductor substrate 1 and the mold 137 .
  • the mold 137 is composed of quartz, in which the aforementioned alignment marks are applied at the prescribed positions opposite to the semiconductor substrate 1 .
  • a plurality of projections 137 a which are consecutively aligned in a zigzag manner (and whose cross sections are each formed in an acute triangular shape having a summit), are formed in the mold 137 at prescribed positions suiting the channel forming regions C of the thick film 35 .
  • the mold 137 is pressed against the resist film 36 formed on the semiconductor substrate 1 .
  • the contact surface (particularly, the lower surface at which the projections 137 a are formed) of the mold 137 in contact with the resist film be covered with a fluorocarbon resin or be subjected to prescribed surface processing (or silicon processing).
  • the resist film 36 is subjected to heat treatment for ten minutes at a temperature of 150° C., thus dissolving the resist film 36 .
  • the resist film 36 becomes softened at 150° C., and then it becomes hardened when the temperature of 200° C. That is, the resist film 36 is not hardened at the temperature of 150° C.
  • the mold 137 is subjected to pressing as the resist film 36 becomes softened, so that the channel forming region C is deformed in shape to suit the projections 137 a .
  • the resist film 36 is cooled, and then the mold 137 is separated, so that the resist film 36 is hardened without changing channel shapes formed therein.
  • the heating temperature exceeds 100° C., solvent starts to be vaporized, thus improving adhesion between the semiconductor substrate 1 and the resist film 36 .
  • the mold 137 is separated from the resist film 36 .
  • This allows the channels 36 a whose shapes suit the projections 137 a of the mold 137 to be formed in the resist film 36 .
  • the aforementioned mold 137 can be combined with a photomask; hence, it is possible to simultaneously realize the pattern formation of the resist film 36 and the formation of the channels 36 a .
  • the resist film 36 and the thick film 35 are subjected to dry etching with an etching selection ratio of 1:1 between resist and silicon oxide, thus forming a plurality of channels 8 in the thick film 35 and also making the thinned thick film 35 be left in the via A and the pad B at the same time.
  • the aforementioned dry etching is performed under the following conditions.
  • Etching gas CF 4 /CHF 3 /N 2 /O 2 , mixing ratio 60/180/10/100 sccm.
  • Electrode temperature 15° C.
  • the recessed widths of the via A and the pad B are set not to be larger than the recessed width of the passivation film 32 . Then, the resist film 36 remaining above the thick film 35 is removed.
  • a plurality of channels 8 are formed in the channel forming region C of the thick film 35 .
  • the thick film 35 and the silicon oxide film 33 covering the via A are removed by way of resist work and etching, thus making the conductive portion 21 a of the via A be exposed.
  • the magnet film used for the formation of the bias magnets 6 of the giant magnetoresistive elements is formed on the overall surface of the semiconductor substrate 1 by way of sputtering. Then, unnecessary portions of the magnet film are removed by way of resist work and etching, so that as shown in FIG. 19( c ), the bias magnets 6 are formed on the slopes of the channels 8 , and the wiring film 25 is formed above the conductive portion 21 a of the via A at the same time. In addition, the wiring layer 7 is formed to connect the wiring film 25 and the bias magnets 6 of the giant magnetoresistive elements.
  • a multilayered thin metal is used for the magnet film.
  • the bias magnets 6 of the giant magnetoresistive elements forming the X-axis sensor 2 and the Y-axis sensor 3 are formed together with the wiring layer 7 on the planar surface of the thick film 35 .
  • the resist film 36 in which a prescribed pattern is formed is subjected to heat treatment, thus making the terminal surfaces thereof be inclined.
  • the giant magnetoresistive element film is formed on the overall surface of the semiconductor substrate 1 by way of sputtering.
  • the aforementioned multilayered thin metal is used as the giant magnetoresistive element film.
  • the semiconductor substrate 1 is set up above a magnet array and is subjected to heat treatment for three to five hours at a temperature ranging from 260° C. to 290° C., thus performing the pinning process on the giant magnetoresistive element film.
  • the giant magnetoresistive element film is subjected to resist work and etching, thus removing unnecessary portions therefrom.
  • the magneto-sensitive elements 5 are formed on the slopes of the channels 8 , thus producing the giant magnetoresistive elements. This completes the production of the Z-axis sensor 4 .
  • the giant magnetoresistive element film is left above the wiring film 25 composed of the magnet film formed on the conductive portion 21 a of the via A, and it is used as the protection conductive film 26 .
  • the via A having the structure shown in FIG. 8 .
  • the magneto-sensitive elements 5 are formed on the planar surface of the thick film 35 as well, thus completing the production of the giant magnetoresistive elements forming the X-axis sensor 2 and the Y-axis sensor 3 .
  • the passivation film 27 of 1 ⁇ m thickness composed of silicon oxide is formed by way of the plasma CVD method, and the protection film 28 composed of polyimide is formed thereon. Then, the protection film 28 and the passivation film 27 are removed from the pad B, which is thus exposed.
  • etching is performed using the protection film 28 as a mask, whereby the silicon oxide film 33 and the thick film 35 covering the conductive portion 21 b are removed so as to make the pad B be exposed. This completes the production of the magnetic sensor of the present embodiment.
  • the manufacturing method of the magnetic sensor of the present embodiment it is possible to form the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 on a single semiconductor substrate 1 and to also form the via A and the pad B; it is possible to easily produce a small-size three-axial magnetic sensor by way of a series of consecutive processes.
  • the mod 137 having the projections 137 a which are shaped to suit the channels 8 formed in the thick film 35 , is pressed against the resist film 36 so as to form the channels 8 ; hence, it is possible to easily form the channels 8 by way of the etching of the thick film 35 . This improves the planation with respect to the slopes of the channels 8 . Since the magneto-sensitive elements forming the giant magnetoresistive elements are formed on the slopes of the channels 8 , it is possible to form the Z-axis sensor 4 having a fixed sensing direction and a high sensitivity.
  • a photomask 40 composed of gray reticles shown in FIG. 21( a ) is used. Numerous fine patterns 41 each having a resolution that is smaller than a resolution of resist forming the resist film 36 are formed in the photomask 40 . As shown in FIG. 21( b ), the photomask 40 is designed such that the number of fine patterns 41 (hereinafter, referred to as a pattern ratio) per unit area is gradually increased from the center to both ends of the channel formed in the resist film 36 . It is possible to appropriately adjust the pattern ratio in response to the shape of the channel 8 or the inclination of the slope of the channel 8 .
  • channels are formed in the thick film by way of etching, thus producing a desired magnetic sensor.
  • a positive-type resist is used for the formation of the channel 36 a in the resist film 36 by use of the photomask 40 ; however, it is possible to form a negative-type resist by setting variations of the pattern ratio of the photomask 40 oppositely to those shown in FIG. 22 , whereby a desired channel can be formed in the resist film 36 .
  • the manufacturing method of the magnetic sensor of the present embodiment it is possible to form the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 on a single semiconductor substrate 1 , and it is possible to simultaneously form the via A and the pad B. This makes it possible to rapidly produce a small-size three-axial magnetic sensor by way of a series of consecutive processes.
  • the photomask 40 With respect to the formation of channels, it is possible to form the photomask 40 having numerous fine patterns 41 , the number of which per unit area gradually increases from the center to both ends of the channel.
  • the photomask 40 is positioned opposite to the resist film 36 , which is then subjected to exposure and development, thus forming the desired channel 36 a .
  • This makes it possible to easily form channels having prescribed shapes by way of etching of the thick film 35 ; hence, it is possible to improve the planation with respect to the slopes of the channels. That is, magneto-sensitive elements of giant magnetoresistive elements are formed on the slopes of the channels having improved planation; hence, it is possible to produce a Z-axis sensor 4 having a fixed sensing direction and a high sensitivity.
  • a magnetic sensor of a third embodiment is similar to the magnetic sensors of the first and second embodiments, although the manufacturing method thereof partially differs from the foregoing ones. That is, after the foregoing processes of FIGS. 9 and 10 , which are described in the first embodiment, the resist film 36 and the thick film 35 are subjected to dry etching in accordance with the reactive ion etching (RIE) method in high ion etching conditions, so that a plurality of channels 8 are formed in the thick film 35 , and at the same time, the thick film 35 is reduced in thickness in connection with the via A and the pad B.
  • RIE reactive ion etching
  • the high ion etching conditions in the reactive ion etching are as follows:
  • Etching gas CF 4 /CHF 3 /O 2 /Ar, mixing ratio of 30/90/50, 100/50, 200 sccm.
  • RF Power 750 to 1200 W.
  • the third embodiment it is possible to form the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 on a single semiconductor substrate 1 , and it is possible to form the via A and the pad B at the same time; hence, it is possible to rapidly produce a small-size three-axial magnetic sensor by way of a series of consecutive processes.
  • dry etching is performed in accordance with the reactive ion etching method in the high ion etching conditions, whereby it is possible to form a plurality of channels 8 whose cross-sectional shapes are connected in a zigzag manner, in the thick film 35 in the channel forming region C; hence, it is possible to improve the planation with respect to the slopes of the channels 8 .
  • the thick film of 5 ⁇ m thickness composed of silicon oxide is formed by way of the plasma CVD method.
  • a plurality of projections 35 a each having a rectangular cross-sectional shape are formed only in the channel forming region C.
  • silicon oxide is deposited on the thick film 35 by way of the high-density plasma CVD method, thus forming an insulating film 37 whose thickness ranges from 3 ⁇ m to 5 ⁇ m.
  • the insulating film 37 having a planar surface is formed in connection with the via A and the pad B, whereas the projections 37 a having slopes are formed in the channel forming region C.
  • silicon oxide is subjected to synthesis and deposition by use of high-density plasma (e.g., an electron density ranging from 1 ⁇ 10 9 /cm 3 to 5 ⁇ 10 10 /cm 3 ), and at the same time, prescribed parts of the deposited silicon oxide are subjected to plasma etching.
  • high-density plasma e.g., an electron density ranging from 1 ⁇ 10 9 /cm 3 to 5 ⁇ 10 10 /cm 3
  • the insulating film 37 composed of silicon oxide is deposited on the plurality of projections 35 a of the thick film 35 , so that it projects upwardly in comparison with the periphery thereof. Upper corners of the insulating film 37 are subjected to cutting in the channel forming region C, so that the projections 37 a having slopes are formed.
  • the high-density plasma CVD method is performed under the following conditions.
  • Monosilane flow 50 to 150 sccm.
  • Oxygen flow 100 to 200 sccm.
  • High frequency output 2 kW to 5 kW.
  • the thick film 35 and the insulating film 37 are entirely subjected to back-etching in accordance with the reactive ion etching method, plasma dry etching method, and ion milling method, thus forming projections having slopes in the thick film 35 (see the channel forming region C shown in FIG. 19 ). As described above, a plurality of channels are formed. Then, the thick film 35 is subjected to dry etching by using the resist film 36 , which has opening patterns in connection with the via A and the pad B, as a mask, thus reducing the thickness of the thick film 35 remaining in the via A and the pad B.
  • the following etching conditions are adapted to the reactive ion etching method, which is performed to form a plurality of the channels 8 .
  • Etching gas CF 4 /CHF 3 /O 2 /Ar, mixing ratio of 30/90/50, 100/50, and 20 sccm.
  • RF Power 750 to 1200 W.
  • the following conditions are adapted to the plasma etching method, which is performed to form a plurality of the channels 8 .
  • Etching gas Ar, 100 sccm.
  • Electrode temperature 100° C.
  • the following conditions are adapted to the ion milling method, which is performed to form a plurality of the channels 8 .
  • Ar gas 4 to 10 sccm.
  • Acceleration voltage 50 to 1000 W.
  • Electrode angle i.e., an angle formed between the propagation direction of acceleration particles and the normal line of a wafer: 0 ⁇ 45°.
  • a magnetic sensor of a fourth embodiment is similar to the foregoing magnetic sensors of the first and second embodiments, although it partially differs from the foregoing ones in terms of the manufacturing method.
  • the fourth embodiment is designed such that, as shown in FIG. 25 , an etching stopper layer 12 composed of a passivation film and an insulating film is inserted between the semiconductor substrate 1 and the thick film 11 .
  • the resist film 36 and the thick film 35 are subjected to dry etching by using the silicon nitride film 34 to form the upper layer of a passivation film 32 as an etching stopper as shown in FIG. 11( a ), thus forming a plurality of the channels 8 in the thick film 35 and simultaneously reducing the thickness of the thick film 35 remaining in the via A and the pad B.
  • the silicon nitride film 34 is used as an etching stopper, dry etching is completed when the silicon nitride film 34 is exposed in the channel forming region C.
  • RIE reactive ion etching
  • Etching gas C 4 F 8 /Ar/CH 2 F 2 , mixing ratio of 7/500/4 sccm.
  • the dry etching is performed under the aforementioned conditions, it is possible to increase the etching selection ratio between resist forming the resist film 36 and silicon oxide forming the thick film 35 ; hence, it is possible to use the silicon nitride film 34 as an etching stopper.
  • the plurality of channels 8 formed in the thick film 35 are recessed toward the silicon nitride film 34 .
  • the etching selection ratio can be set to “6”, for example.
  • the foregoing processes shown in FIGS. 9( a ) to ( d ) are performed.
  • the insulating film 37 of 0.2 ⁇ m thickness is formed by way of sputtering.
  • the insulating film 37 is composed of aluminum oxide (Al 2 O 3 ), boron nitride (BN), and diamond-like carbon.
  • As the insulating film it is possible to use one such as a silicon nitride film and a silicon oxide film having an etching rate lower than that of the thick film 35 .
  • a resist film 38 of 3 ⁇ m thickness is formed on the overall surface of the insulating film 37 .
  • prescribed parts of the resist film 38 are removed by way of etching, thus forming a prescribed resist pattern.
  • the resist pattern has openings only corresponding to the via A and the pad B, by which the insulating film 37 is exposed.
  • the insulating film 37 is removed from prescribed regions corresponding to the via A and the pad B by way of ion milling, thus making the silicon oxide film 33 be exposed. Then, as shown in FIG. 27( b ), the resist film 38 is removed.
  • the thick film 35 of 5 ⁇ m thickness composed of silicon oxide is formed by way of the plasma CVD method. Then a plurality of the channels 8 are formed in the thick film 35 .
  • the resist film 36 of 3 ⁇ m thickness is formed on the overall surface of the thick film 35 .
  • prescribed parts of the resist film 36 are removed by way of etching, thus forming a prescribed resist pattern.
  • the resist pattern has openings corresponding to the channels 8 formed in the channel forming region C and openings corresponding to the regions of the via A and pad B.
  • the remaining resist film 36 is subjected to heat treatment for ten minutes at a temperature of 150° C., thus dissolving the resist film 36 . Due to the surface tension of a solution that is produced by dissolution of resist in the heat treatment, the upper surface of the resist film 36 rises up, and the terminal surface thereof slopes. In particular, a plurality of projections having linear ridgelines are formed in the resist film 36 , wherein the height thereof is 5 ⁇ m or so.
  • the resist film 36 and the thick film 35 are subjected to dry etching by using the insulating film 37 as an etching stopper under prescribed conditions realizing the etching selection ratio of 1:1 between the resist and silicon oxide, thus forming a plurality of channels 8 in the thick film 35 and simultaneously reducing the thickness of the thick film 35 remaining in the via A and the pad B.
  • RIE reactive ion etching
  • Etching gas CF 4 /CHF 3 /N 2 , mixing ratio of 30/90/5 sccm.
  • each channel 8 is formed by recessing the thick film 35 toward the insulating film 37 .
  • the recessed widths at the via A and the pad B are controlled so as not to become larger than the recessed width of the first passivation film 32 . Then, the resist film 36 remaining on the thick film 35 is removed.
  • FIG. 29( a ) a plurality of the channels 8 are formed in the thick film 35 in the channel forming region C. Then, as shown in FIG. 29( b ), the thick film 35 and the silicon oxide film 33 covering the conductive portion 21 a of the via A are removed by way of etching, thus making the conductive portion 21 a be exposed.
  • the magnet film forming the bias magnets 6 of the giant magnetoresistive elements is formed on the overall surface of the semiconductor substrate 1 by way of sputtering; unnecessary portions are removed by way of resist work and etching; as shown in FIG. 29( c ), the bias magnets 6 are formed on the slopes of the channels 8 ; at the same time, the wiring film 25 is formed on the conductive portion 21 a of the via A; furthermore, the wiring layer 7 is formed to connect the wiring film 25 and the bias magnets 6 of the giant magnetoresistive elements together.
  • a multilayered thin metal is used for the magnet film.
  • bias magnets 6 of the giant magnetoresistive elements forming the X-axis sensor 2 and the Y-axis sensor 3 as well as the wiring layer 7 are formed on the planar surface of the thick film 35 .
  • the resist film 36 In order to appropriately perform etching on the magnet film in connection with the slopes of the channels 8 in the resist work for the formation of the bias magnets 6 , the resist film 36 , in which a prescribed resist pattern is already formed, is subjected to heat treatment, thus making the terminal surfaces of the resist film 36 incline.
  • the giant magnetoresistive element film forming the magneto-sensitive elements 5 of the giant magnetoresistive elements is formed on the overall surface by way of sputtering.
  • a multilayered thin metal is used for the giant magnetoresistive element film.
  • the semiconductor substrate 1 in which the aforementioned giant magnetoresistive element film is formed, is set up above a magnet array and is then subjected to heat treatment for three to five hours at a temperature ranging from 260° C. to 290° C., thus subjecting the giant magnetoresistive element film to the pinning process.
  • the giant magnetoresistive element film is subjected to resist work and etching so as to remove unnecessary portions therefrom, so that the magneto-sensitive elements 5 are formed on the slopes of the channels 8 as shown in FIG. 30( a ), thus completing the production of the giant magnetoresistive elements.
  • the via A having the structure shown in FIG. 8 .
  • the magneto-sensitive elements 5 are formed on the planar surface of the thick film 35 as well, thus forming the giant magnetoresistive elements. This completes the production of the X-axis sensor 2 and the Y-axis sensor 3 .
  • the passivation film 27 of 1 ⁇ m thickness composed of silicon nitride is formed by way of the plasma CVD method; furthermore, the protection film 28 composed of polyimide is formed. Then, the protection film 28 and the passivation film 27 are removed from the region corresponding to the pad B, which is thus exposed.
  • etching is performed using the protection film 28 as a mask so as to remove the silicon oxide film 33 and the thick film 35 covering the conductive portion 21 b of the pad B, thus making the conductive portion 21 b of the pad B be exposed.
  • the manufacturing method of the magnetic sensor of the fourth embodiment it is possible to form the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 on a single semiconductor substrate 1 and to simultaneously form the via A and the pad B; hence, it is possible to rapidly produce a small-size three-axial magnetic sensor by way of a series of processes. Since the resist film 36 and the thick film 35 are subjected to etching by using the insulating film 37 formed on the passivation film 32 as an etching stopper, it is possible to form a plurality of channels 8 by recessing the insulating film 37 toward the thick film 35 .
  • the fourth embodiment is characterized in that the channel formation can be easily controlled in the depth direction due to the formation of the insulating film 37 on the passivation film 32 .
  • a magnetic sensor of a fifth embodiment of the present invention has a structure similar to that of the first embodiment; and differences therebetween will be described with reference to FIGS. 31 to 33 .
  • FIG. 31 is a plan view showing the giant magnetoresistive elements 4 i and 4 j ;
  • FIG. 32 is a cross-sectional view taken along line IV-IV in FIG. 31 ; and
  • FIG. 33 is an enlarged cross-sectional view of an area encompassed by dotted lines in FIG. 32 .
  • the thick film 11 composed of silicon oxide is formed on the semiconductor substrate 1 ; and the thick film 11 is partially cut so as to form four channels, each having a V-shape, in parallel.
  • the channel 8 is a thin recess having prescribed dimensions, wherein the depth ranges from 3 ⁇ m to 8 ⁇ m, the length ranges from 200 ⁇ m to 400 ⁇ m, and the slope width ranges from 3 ⁇ m to 16 ⁇ m.
  • the slopes of the channels 8 are composed of first slopes 8 A, 8 E, and 8 G on the upper side as well as second slopes 8 B, 8 D, and 8 H on the lower side, wherein they have different inclination angles, which range from 60° to 80° with respect to the surface of the thick film 11 , and wherein the second slopes are greater than the first slopes in inclination angles.
  • FIG. 32 shows that each slope of the channel 8 is formed by the first and second slopes, both of which are planar; however, in the actual manufacturing process, each slope of the channel 8 is slightly bent externally.
  • each slope of the channel 8 is formed so as to satisfy the relationship of ⁇ 1 > ⁇ 2 , wherein ⁇ 1 represents an angle (0° ⁇ 1 ⁇ 90°) formed between the second slope 8 D and the silicon nitride film 34 (or the semiconductor substrate 1 ), and ⁇ 2 represents an angle (0° ⁇ 2 ⁇ 90°) formed between the first slope 8 E and the silicon nitride film 34 (or the semiconductor substrate 1 ).
  • a magneto-sensitive element 5 of the giant magnetoresistive element is formed on the second slope 8 D having a larger inclination angle ⁇ 1 .
  • the magneto-sensitive element 5 of the giant magnetoresistive element is formed on the second slope 8 D having a larger inclination angle ⁇ 1 as described above, it is possible to adjust the sensing direction of the Z-axis sensor 4 and to increase the sensitivity thereof.
  • the magneto-sensitive elements 5 of the giant magnetoresistive elements are formed on the eight slopes adjoining together in the four channels 8 shown in FIG. 32 such that they are each formed along the lower-side second slope in the longitudinal direction and at the center having good planation.
  • the magneto-sensitive element 5 formed on the second slope 8 D is electrically connected to the magneto-sensitive element 5 formed on the second slope 8 H via the bias magnet 6 extending over the first slope 8 E, top portion 8 F, and its adjacent first slope 8 G.
  • the magneto-sensitive element formed on the second slope 8 N is electrically connected to the magneto-sensitive element 5 formed on the adjacent second slope 8 P via the bias magnet 6 over the bottom 8 O.
  • FIGS. 9( a ) to ( d ) and FIGS. 10( a ) to ( c ) are performed.
  • each slope of the channel 8 is bent in the middle thereof due to the aforementioned dry etching, so that the second slope lying in proximity to the silicon nitride film 34 is connected to the first slope lying in proximity to the top portion.
  • each slope of the channel 8 is formed to satisfy the relationship of ⁇ 1 > ⁇ 2 , wherein ⁇ 1 represents an angle (0° ⁇ 1 ⁇ 90°) formed between the second slope and the silicon nitride film 34 (or the semiconductor substrate 1 ), and ⁇ 2 represents an angle (0° ⁇ 2 ⁇ 90°) formed between the first slope and the silicon nitride film 34 (or the semiconductor substrate 1 ).
  • the magneto-sensitive element 5 of the giant magnetoresistive element is formed on the second slope having a larger inclination angle ⁇ 1 measured from the semiconductor substrate 1 .
  • the angles ⁇ 1 and ⁇ 2 vary depending upon the etching conditions used for the formation of the channels 8 , wherein it is preferable that the angle ⁇ 1 be increased as much as possible and be set close to 90°.
  • the thick film 35 and the silicon oxide film 33 covering the conductive portion 21 a of the via A are removed by way of etching, thus making the conductive portion 21 a be exposed.
  • the magnet film forming the bias magnets 6 of the giant magnetoresistive elements is formed on the overall surface of the semiconductor substrate 1 by way of sputtering; then, unnecessary portions are removed by way of resist work and etching.
  • the bias magnets 6 are formed on the second slopes of the channels 8 ; at the same time, the wiring film 25 is formed above the conductive portion 21 a of the via A; and the wiring layer 7 is formed to connect together the wiring film 25 and the bias magnets 6 of the giant magnetoresistive elements.
  • a multilayered thin metal is used for the magnet film.
  • bias magnets 6 of the giant magnetoresistive elements forming the X-axis sensor 2 and the Y-axis sensor 3 as well as the wiring layer 7 are formed on the planar surface of the thick film 35 as well.
  • the resist film In order to appropriately perform etching on the magnet film on the second slopes of the channels 8 in the resist work used for the formation of the bias magnets 6 , the resist film, in which a prescribed resist pattern is formed, is subjected to heat treatment, thus making the terminal surfaces of the resist film incline.
  • the giant magnetoresistive element film forming the magneto-sensitive elements 5 of the giant magnetoresistive elements is formed on the overall surface by way of sputtering.
  • a multilayered thin metal is used for the giant magnetoresistive element film.
  • the semiconductor substrate 1 is set in a position in proximity to a magnet array and is then subjected to heat treatment for three to five hours at a temperature ranging from 260° C. to 290° C., thus subjecting the giant magnetoresistive element film to the pinning process.
  • the giant magnetoresistive element film is subjected to resist work and etching so as to remove unnecessary portions therefrom, so that, as shown in FIG. 35( a ), the magneto-sensitive elements 5 are formed on the second slopes of the channels, thus producing giant magnetoresistive elements. This completes the production of the Z-axis sensor 4 .
  • the giant magnetoresistive element film remaining on the wiring film 25 composed of the magnet film, which is formed in advance above the conductive portion 21 a of the via A, is used for the protective conductive film 26 .
  • the via A having the structure shown in FIG. 8 .
  • the magneto-sensitive elements 5 are also formed on the planar surface of the thick film 35 , thus producing giant magnetoresistive elements. This completes the production of the X-axis sensor 2 and the Y-axis sensor 3 .
  • the passivation film 27 of 1 ⁇ m thickness composed of silicon nitride is formed by way of the plasma CVD method; and the protection film 28 composed of polyimide is formed thereon.
  • the protection film 28 and the passivation film 27 are removed from the prescribed region corresponding to the pad B, which is thus exposed.
  • etching is performed using the protection film 28 as a mask so as to remove the silicon oxide film 33 and the thick film 35 covering the conductive portion 21 b of the pad B, so that the pad B is completely exposed. This completes the production of the magnetic sensor of the present embodiment.
  • the sixth embodiment is designed such that a plurality of giant magnetoresistive elements are formed on the semiconductor substrate 1 so as to form the X-axis sensor 2 , Y-axis sensor 3 , and Z-axis sensor 4 , wherein differences are introduced into the giant magnetoresistive elements forming the Z-axis sensor 4 .
  • FIG. 36 is a plan view showing the giant magnetoresistive elements 4 i and 4 j forming the Z-axis sensor 4 ; and FIG. 37 is a cross-sectional view taken along line IV-IV in FIG. 36 .
  • each channel 8 is a thin recess having prescribed dimensions, wherein the depth ranges from 3 ⁇ m to 7 ⁇ m, the length ranges from 250 ⁇ m to 300 ⁇ m, and the slope width ranges from 3 ⁇ m to 8 ⁇ m, and wherein an angle formed between the slope and the thick film 11 ranges from 60° to 80° and is preferably set to 70°.
  • each slope of the channel 8 is not formed to be planar but is curved externally.
  • восем ⁇ of the magneto-sensitive elements 5 forming giant magnetoresistive elements are formed with respect to eight channels of four adjacent channels, which are positioned in the center among six channels 8 adjoining together, wherein they are each formed at the center having good planation along the longitudinal direction.
  • the magneto-sensitive element 5 formed on the slope of the channel 8 is electrically connected to the magneto-sensitive element 5 formed on the slope of the adjacent channel 8 via the bias magnet 6 extending over the top portion.
  • the magneto-sensitive element 5 formed on one slope of the channel 8 is electrically connected to the magneto-sensitive element 5 formed on the other slope of the channel 8 via the bias magnet 6 extending over the bottom portion.
  • a total of four first dummy slopes 91 are formed using the two channels 8 , which are formed externally to the four channels 8 in which the giant magnetoresistive elements are formed.
  • both ends of the total of twelve slopes formed in the six channels 8 are extended in the longitudinal direction and are used to form a total of twenty-four second dummy slopes 92 via gaps therebetween.
  • the first dummy slopes 91 are each shaped in a similar manner to the other slopes and are each formed in a rectangular shape in plan view, wherein the inclination angles thereof are reduced.
  • the second dummy slopes 92 are each formed in a trapezoidal shape in plan view but are reduced in widths thereof toward both ends of each channel 8 , wherein the inclination angles thereof are reduced.
  • the magneto-sensitive elements 5 and the bias magnets 6 forming the giant magnetoresistive elements are not formed on the first dummy slopes 91 and the second dummy slopes 92 . Both the first dummy slopes 91 and the second dummy slopes 92 are formed simultaneously with the formation of the channels 8 . Details will be described later.
  • the pinning direction of the magneto-sensitive element 5 is inclined by an angle ranging from 30° to 60° in the longitudinal direction, whereby it is possible to improve the stability against a high magnetic field with respect to the giant magnetoresistive elements.
  • the planation film 31 is formed on the semiconductor substrate 1 .
  • the planation film 31 is formed by sequentially laminating a silicon oxide film of 300 nm thickness, a SOG film of 600 nm thickness, and a silicon oxide film of 50 nm thickness composed of triethoxy silane by way of the plasma CVD method.
  • the passivation film 32 is formed on the overall surface of the semiconductor substrate 1 .
  • the passivation film 32 is formed by laminating a silicon oxide film of 250 nm thickness and a silicon nitride film of 600 nm thickness by way of the plasma CVD method.
  • the thick film 35 of 5 ⁇ m thickness composed of silicon oxide is formed by way of the plasma CVD method.
  • a plurality of channels 8 are formed in the thick film 35 .
  • the resist film 36 of 3 ⁇ m thickness is formed on the overall surface of the thick film 35 .
  • prescribed parts of the resist film 36 are removed by way of etching, thus forming a prescribed resist pattern.
  • the resist pattern has openings at prescribed regions corresponding to channels formed in the channel forming region.
  • the resist pattern is appropriately processed at the prescribed regions thereof in order to realize the simultaneous formation of the first dummy slopes 91 and the second dummy slopes 92 .
  • the remaining resist film 36 is subjected to heat treatment for ten minutes at a temperature of 150° C., thus dissolving the resist film 36 .
  • the upper surface of the resist film 36 rises upwardly due to the surface tension of a solution, which is produced following the resist dissolution in the heat treatment, thus making the terminal surfaces thereof incline.
  • the resist film 36 and the thick film 35 are subjected to dry etching at an etching selection ratio of 1:1 between resist and silicon oxide.
  • the dry etching is performed under the following conditions.
  • Etching gas CH 4 /CHF 3 /N 2 /O 2 , mixing ration of 60/180/10/100 sccm.
  • Electrode temperature 15° C.
  • the magnet film forming the bias magnets 6 of the giant magnetoresistive elements is formed on the overall surface of the semiconductor substrate 1 by way of sputtering, and then unnecessary portions thereof are removed by way of resist work and etching.
  • FIG. 40( b ) it is possible to appropriately form the bias magnets 6 and the wiring film therefor on the slopes of the channels 8 except for the first dummy slopes 91 and the second dummy slopes 92 .
  • a multilayered thin metal is used for the magnet film.
  • bias magnets 6 of the giant magnetoresistive elements forming the X-axis sensor 2 and the Y-axis sensor 3 as well as the wiring layer 7 therefor are formed on the planar surface of the thick film 35 .
  • the resist film 36 In order to appropriately perform etching on the magnet film on the slopes of the channels 8 in the resist work for the formation of the bias magnets 6 , the resist film 36 , in which a prescribed resist pattern is formed, is subjected to heat treatment, thus making the terminal surfaces thereof incline.
  • the giant magnetoresistive element film forming the magneto-sensitive elements 5 of the giant magnetoresistive elements is formed on the overall surface of the semiconductor substrate 1 by way of sputtering.
  • a multilayered thin metal is used for the giant magnetoresistive element film.
  • the aforementioned semiconductor substrate 1 is set in a position close to a magnet array and is then subjected to heat treatment for three to five hours at a temperature ranging from 260° C. to 290° C., thus subjecting the giant magnetoresistive element film to the pinning process.
  • the giant magnetoresistive element film is subjected to resist work and etching, thus removing unnecessary portions therefrom; hence, as shown in FIG. 41( a ), the magneto-sensitive elements 5 are formed on the slopes of the channels except for the first dummy slopes 91 and the second dummy slopes 92 , thus forming giant magnetoresistive elements. This completes the production of the Z-axis sensor 4 .
  • the magneto-sensitive elements 5 are formed on the planar surface of the thick film 35 as well, thus forming giant magnetoresistive elements. This completes the production of the X-axis sensor 2 and the Y-axis sensor 3 .
  • the passivation film 27 of 1 ⁇ m thickness composed of silicon nitride is formed by way of the plasma CVD method; furthermore, the protection film 28 composed of polyimide is formed. This completes the production of the magnetic sensor of the present embodiment.
  • a plurality of channels 8 are formed in the thick film, and the first dummy slopes 91 and the second dummy slopes 92 are formed using similar channel shapes.
  • channel shapes are not necessarily formed; that is, a plurality of bank-like projections are formed on the semiconductor substrate 1 , and the slopes thereof are used, for example.
  • the formation of the aforementioned projection is realized by the same method as the formation of the channels 8 . That is, as shown in FIG. 39( c ), the resist film 36 is subjected to patterning and heat treatment, and then the resist film 36 and the thick film 35 are subjected to plasma etching with an etching selection ratio of 1:1 between resist and silicon oxide.
  • the plasma etching is performed to make the surface of the thick film 35 be planar except for the prescribed regions used for the formation of channels 8 ; and then a major part of the thick film 35 is removed so as to form a plurality of bank-like projections.
  • a prescribed resist pattern is applied to the resist film 36 so as to produce projections realizing the first dummy slopes 91 and the second dummy slopes 92 .
  • a magnetic sensor of a seventh embodiment is similar to the first embodiment; hence, the duplicate description is omitted, and differences therebetween are described below.
  • FIG. 42 is a plan view showing giant magnetoresistive elements 4 i and 4 j forming a Z-axis sensor 4 .
  • a cross-sectional view taken along line IV-IV in FIG. 42 is identical to FIG. 4 .
  • FIG. 43 is a perspective view showing the layout of the giant magnetoresistive elements 4 i and 4 j ; and
  • FIG. 44 is a perspective view showing the layout of the giant magnetoresistive elements 4 k and 4 l.
  • the terminal portions of the channels 8 extending in the longitudinal direction are curved slopes having semi-circular shapes.
  • the resist film is subjected to patterning and is shaped by heating to realize the shapes of the channels 8 .
  • the terminal portions of the channel slopes of the resist pattern in the longitudinal direction are shaped so as to be semi-circular, it is possible to prevent the widths of the terminal portions of the slopes after heat treatment from being decreased.
  • the terminal portions of the channel slopes are not necessarily shaped to be semi-circular; hence, it is possible to employ other shapes having prescribed degrees of roundness.
  • each slope 50 is formed so as to have the same width in the longitudinal direction ranging from the center to the ends, thus realizing a uniform plane shape and inclination angle.
  • the ends of the slopes 50 in the longitudinal direction are connected as curved slopes; hence, adjacently opposite slopes are connected, and the end portion of the channel is shaped so as to be semi-circular.
  • the present invention is designed such that the thick film formed on the semiconductor substrate is subjected to cutting so as to form channels or projections having linear ridgelines, in which giant magnetoresistive elements forming a Z-axis sensor are formed on the slopes; hence, it is applicable to small-size magnetic sensors such as three-axial sensors each formed on a single semiconductor substrate.
  • the present invention is applicable to electronic compasses installed in various portable electronic devices such as portable telephones.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
US10/584,666 2005-03-17 2006-03-15 Magnetic sensor and manufacturing method therefor Expired - Fee Related US8178361B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/459,644 US9054028B2 (en) 2005-03-17 2012-04-30 Magnetic sensor and manufacturing method therefor

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
JP2005-077010 2005-03-17
JP2005077010A JP4984408B2 (ja) 2005-03-17 2005-03-17 磁気センサおよびその製法
JP2005088828A JP4734987B2 (ja) 2005-03-25 2005-03-25 磁気センサの製造方法
JP2005-088828 2005-03-25
JP2005091617A JP4984412B2 (ja) 2005-03-28 2005-03-28 磁気センサおよび磁気センサの製造方法
JP2005091616A JP2006278439A (ja) 2005-03-28 2005-03-28 磁気センサの製造方法
JP2005-091617 2005-03-28
JP2005-091616 2005-03-28
JP2005-098498 2005-03-30
JP2005098498A JP4972871B2 (ja) 2005-03-30 2005-03-30 磁気センサおよびその製造方法
JP2005131857A JP4984424B2 (ja) 2005-04-28 2005-04-28 磁気センサおよびその製造方法
JP2005-131857 2005-04-28
JP2005350487A JP4961736B2 (ja) 2005-12-05 2005-12-05 磁気センサの製造方法
JP2005-350487 2005-12-05
PCT/JP2006/305131 WO2006098367A1 (ja) 2005-03-17 2006-03-15 磁気センサ及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/459,644 Continuation US9054028B2 (en) 2005-03-17 2012-04-30 Magnetic sensor and manufacturing method therefor

Publications (2)

Publication Number Publication Date
US20080169807A1 US20080169807A1 (en) 2008-07-17
US8178361B2 true US8178361B2 (en) 2012-05-15

Family

ID=36991709

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/584,666 Expired - Fee Related US8178361B2 (en) 2005-03-17 2006-03-15 Magnetic sensor and manufacturing method therefor
US13/459,644 Expired - Fee Related US9054028B2 (en) 2005-03-17 2012-04-30 Magnetic sensor and manufacturing method therefor

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/459,644 Expired - Fee Related US9054028B2 (en) 2005-03-17 2012-04-30 Magnetic sensor and manufacturing method therefor

Country Status (4)

Country Link
US (2) US8178361B2 (de)
EP (1) EP1860450B1 (de)
TW (1) TWI313078B (de)
WO (1) WO2006098367A1 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100327864A1 (en) * 2009-06-30 2010-12-30 Stmicroelectronics S.R.L. Magnetoresistive sensor and manufacturing method thereof
US11372029B2 (en) * 2019-12-11 2022-06-28 Tdk Corporation Magnetic field detection apparatus and current detection apparatus
US20230093358A1 (en) * 2021-09-21 2023-03-23 Tdk Corporation Magnetic sensor

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687284B2 (en) * 2005-01-13 2010-03-30 Yamaha Corporation Magnetic sensor and manufacturing method therefor
EP1860450B1 (de) 2005-03-17 2011-06-08 Yamaha Corporation Magnetsensor und herstellungsverfahren dafür
TWI361503B (en) * 2005-03-17 2012-04-01 Yamaha Corp Three-axis magnetic sensor and manufacturing method therefor
US8133439B2 (en) * 2006-08-01 2012-03-13 Magic Technologies, Inc. GMR biosensor with enhanced sensitivity
JP2008270471A (ja) 2007-04-19 2008-11-06 Yamaha Corp 磁気センサ及びその製造方法
JP5152495B2 (ja) * 2008-03-18 2013-02-27 株式会社リコー 磁気センサーおよび携帯情報端末装置
JP2010103224A (ja) * 2008-10-22 2010-05-06 Toshiba Corp 磁気抵抗素子、及び磁気メモリ
ITMI20090972A1 (it) * 2009-06-03 2010-12-04 Consiglio Naz Delle Ricerche Infm Istituto Dispositivo sensore magnetico triassiale integrato.
JP5516584B2 (ja) 2009-07-13 2014-06-11 日立金属株式会社 磁気抵抗効果素子の製造方法、磁気センサ、回転角度検出装置
JP5249150B2 (ja) * 2009-07-23 2013-07-31 株式会社東海理化電機製作所 磁気センサの製造方法及び磁気センサ
JP4807535B2 (ja) * 2009-07-31 2011-11-02 Ｔｄｋ株式会社 磁気センサ
FR2955942B1 (fr) 2010-01-29 2013-01-04 Centre Nat Rech Scient Magnetometre integre et son procede de fabrication
US9000763B2 (en) 2011-02-28 2015-04-07 Infineon Technologies Ag 3-D magnetic sensor
TWI452743B (zh) * 2011-03-03 2014-09-11 Voltafield Technology Corp 磁阻感測器的製造方法
TWI452319B (zh) * 2012-01-09 2014-09-11 Voltafield Technology Corp 磁阻感測元件
CN102565727B (zh) * 2012-02-20 2016-01-20 江苏多维科技有限公司 用于测量磁场的磁电阻传感器
US9791523B2 (en) 2013-03-15 2017-10-17 Fairchild Semiconductor Corporation Magnetic sensor utilizing magnetization reset for sense axis selection
CN103913709B (zh) * 2014-03-28 2017-05-17 江苏多维科技有限公司 一种单芯片三轴磁场传感器及其制备方法
CN103954920B (zh) * 2014-04-17 2016-09-14 江苏多维科技有限公司 一种单芯片三轴线性磁传感器及其制备方法
CN104051612B (zh) * 2014-06-30 2018-01-26 杭州士兰集成电路有限公司 单芯片三轴各向异性磁阻传感器及其制造方法
US10145906B2 (en) 2015-12-17 2018-12-04 Analog Devices Global Devices, systems and methods including magnetic structures
WO2018199601A1 (ko) * 2017-04-28 2018-11-01 (주)에스엔텍 센서 탑재 웨이퍼
JP7063307B2 (ja) 2019-06-05 2022-05-09 Tdk株式会社 磁気センサおよび磁気センサシステム
JP6954326B2 (ja) 2019-06-05 2021-10-27 Tdk株式会社 位置検出装置
JP6954327B2 (ja) 2019-06-10 2021-10-27 Tdk株式会社 位置検出装置
JP7107330B2 (ja) 2020-03-27 2022-07-27 Tdk株式会社 磁気センサおよびその製造方法
JP7302612B2 (ja) 2021-01-18 2023-07-04 Tdk株式会社 磁気センサ
JP7298630B2 (ja) 2021-01-25 2023-06-27 Tdk株式会社 磁気センサ
US20230089204A1 (en) * 2021-09-21 2023-03-23 Tdk Corporation Sensor
US12044753B2 (en) * 2021-09-21 2024-07-23 Tdk Corporation Sensor having at least part of sensor element disposed on inclined surface of protruding portion of support member
US11892527B2 (en) * 2021-09-21 2024-02-06 Tdk Corporation Magnetic sensor
JP2023046259A (ja) * 2021-09-21 2023-04-03 Tdk株式会社 センサ
US11874346B2 (en) * 2021-09-21 2024-01-16 Tdk Corporation Magnetic sensor
US11867779B2 (en) * 2021-09-21 2024-01-09 Tdk Corporation Sensor
US11971461B2 (en) 2021-09-21 2024-04-30 Tdk Corporation Sensor having protruding surface
US12072397B2 (en) * 2021-09-22 2024-08-27 Tdk Corporation Magnetic field detection apparatus

Citations (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385975A (en) 1981-12-30 1983-05-31 International Business Machines Corp. Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate
JPH01132922A (ja) 1987-11-18 1989-05-25 Hitachi Ltd ダイナモメータの揺動機構
JPH01172581A (ja) 1987-12-25 1989-07-07 Toppan Printing Co Ltd ジャドウマスクの製造方法
JPH01250875A (ja) 1988-03-31 1989-10-05 Toshiba Corp 磁気センサー
JPH11305055A (ja) 1998-04-22 1999-11-05 Sharp Corp 光導波路の製造方法及び光導波路製造のためのマスタ原板の製造方法
JP2000232156A (ja) 1999-02-09 2000-08-22 Seiko Epson Corp 半導体装置の製造方法
US6344951B1 (en) 1998-12-14 2002-02-05 Alps Electric Co., Ltd. Substrate having magnetoresistive elements and monitor element capable of preventing a short circuit
JP2002299728A (ja) 2001-01-24 2002-10-11 Yamaha Corp 磁気センサ及びその製造方法
JP2002324800A (ja) 2001-04-25 2002-11-08 Hitachi Ltd 半導体装置及びその製造方法
JP2004006752A (ja) 2002-03-27 2004-01-08 Yamaha Corp 磁気センサおよびその製造方法
JP2004012156A (ja) 2002-06-04 2004-01-15 Wacoh Corp 三次元磁気センサおよびその製造方法
JP2004079820A (ja) 2002-08-20 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置
US6707298B2 (en) 2001-10-29 2004-03-16 Yamaha Corporation Magnetic sensor
EP1411365A2 (de) 2002-10-18 2004-04-21 Yamaha Corporation Magnetfeldsensor und dessen Herstellungsverfahren
US20040104724A1 (en) 2002-11-29 2004-06-03 Hideki Sato Magnetic sensor, and method of compensating temperature-dependent characteristic of magnetic sensor
JP2004214267A (ja) 2002-12-27 2004-07-29 Nec Electronics Corp 半導体装置およびその製造方法
CN1523658A (zh) 2003-02-21 2004-08-25 株式会社瑞萨科技 电子器件的制造方法
US20040233588A1 (en) 2002-10-23 2004-11-25 Yamaha Corporation Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process
JP2004356338A (ja) 2003-05-28 2004-12-16 Res Inst Electric Magnetic Alloys 薄膜磁気センサ及びその製造方法
JP2005039010A (ja) 2003-07-18 2005-02-10 Yamaha Corp 磁気センサ
JP2005039011A (ja) 2003-07-18 2005-02-10 Yamaha Corp 磁気センサ
US20050270020A1 (en) 2004-06-03 2005-12-08 Honeywell International Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
US20080169807A1 (en) 2005-03-17 2008-07-17 Hiroshi Naito Magnetic Sensor and Manufacturing Method Therefor
US7687284B2 (en) 2005-01-13 2010-03-30 Yamaha Corporation Magnetic sensor and manufacturing method therefor

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07245433A (ja) * 1994-01-13 1995-09-19 Res Inst For Prod Dev 磁気抵抗効果素子およびそのための基板
JPH11329228A (ja) 1998-05-14 1999-11-30 Toppan Printing Co Ltd シャドウマスクの製造方法
US6655218B1 (en) 1999-05-28 2003-12-02 Fuji Jukogyo Kabushiki Kaisha Composite material and method of controlling damage thereto and damage sensor
DE10144269A1 (de) 2001-09-08 2003-03-27 Bosch Gmbh Robert Sensorelement zur Erfassung einer physikalischen Messgröße zwischen tribologisch hoch beanspruchten Körpern
DE10144271A1 (de) 2001-09-08 2003-03-27 Bosch Gmbh Robert Sensorelement zur Erfassung einer physikalischen Messgröße zwischen tribologisch hoch beanspruchten Körpern
US20080021339A1 (en) 2005-10-27 2008-01-24 Gabriel Jean-Christophe P Anesthesia monitor, capacitance nanosensors and dynamic sensor sampling method
CN100403572C (zh) 2002-04-19 2008-07-16 旭化成电子材料元件株式会社 磁电变换元件及其制造方法
WO2004046228A1 (en) 2002-11-15 2004-06-03 Meguiar's, Inc. Protective coating compositions, systems, and methods
JP4192713B2 (ja) 2003-07-25 2008-12-10 富士ゼロックス株式会社 アリールアミン化合物、電荷輸送材料、電子写真感光体、画像形成装置及びプロセスカートリッジ
US7536912B2 (en) 2003-09-22 2009-05-26 Hyeung-Yun Kim Flexible diagnostic patches for structural health monitoring
AU2004277167A1 (en) 2003-09-22 2005-04-07 Kim Hyeung-Yun Methods for monitoring structural health conditions
US7325456B2 (en) 2003-09-22 2008-02-05 Hyeung-Yun Kim Interrogation network patches for active monitoring of structural health conditions
CN108425170B (zh) 2004-11-09 2021-02-26 得克萨斯大学体系董事会 纳米纤维纱线、带和板的制造和应用
US7750434B2 (en) 2005-01-31 2010-07-06 Sanyo Electric Co., Ltd. Circuit substrate structure and circuit apparatus
JP4591222B2 (ja) 2005-06-09 2010-12-01 セイコーエプソン株式会社 電気光学装置及び画像形成装置
JP4983150B2 (ja) 2006-04-28 2012-07-25 東洋インキＳｃホールディングス株式会社 導電性被膜の製造方法
US20080249207A1 (en) 2006-05-02 2008-10-09 Whiteley Corporation Pty Ltd Safety Coatings
US7817333B2 (en) 2007-02-06 2010-10-19 Photon Dynamics, Inc. Modulator with improved sensitivity and life time
US7500399B2 (en) 2007-07-02 2009-03-10 The Hong Kong Polytechnic University Piezoresistive strain gauge using doped polymeric fluid
KR20080012393A (ko) 2008-01-17 2008-02-11 김재호 고 내마모성 및 고 투명성의 수용성 광경화형 대전방지조성물 및 이를 코팅한 전도성 타일 바닥재
JP2009216939A (ja) 2008-03-10 2009-09-24 Fuji Xerox Co Ltd 電子写真用トナー及びその製造方法、電子写真用現像剤、トナーカートリッジ、プロセスカートリッジ、画像形成装置
WO2010005707A1 (en) 2008-06-16 2010-01-14 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
JP5299616B2 (ja) 2008-10-23 2013-09-25 富士ゼロックス株式会社 静電荷像現像用トナー及びその製造方法、静電荷像現像剤、トナーカートリッジ、プロセスカートリッジ、画像形成方法、並びに、画像形成装置
US7854173B2 (en) 2008-11-28 2010-12-21 The Hong Kong Polytechnic University Strain sensor
JP2010224503A (ja) 2009-03-25 2010-10-07 Fuji Xerox Co Ltd 電子写真感光体、画像形成装置及びプロセスカートリッジ
JP5397896B2 (ja) 2009-08-25 2014-01-22 独立行政法人産業技術総合研究所 カーボンナノチューブを用いた伸縮装置、伸縮駆動装置およびｃｎｔ膜構造体
US8519449B2 (en) 2009-08-25 2013-08-27 Honeywell International Inc. Thin-film transistor based piezoelectric strain sensor and method
US8299686B2 (en) 2009-08-27 2012-10-30 Canon Kabushiki Kaisha Actuator with sensor
US8471438B2 (en) 2009-08-27 2013-06-25 Canon Kabushiki Kaisha Actuator with sensor
WO2011044221A2 (en) 2009-10-06 2011-04-14 Massachusetts Institute Of Technology Method and apparatus for determining radiation
US8518472B2 (en) 2010-03-04 2013-08-27 Guardian Industries Corp. Large-area transparent conductive coatings including doped carbon nanotubes and nanowire composites, and methods of making the same
CN101859216B (zh) 2010-06-11 2012-01-25 北京富纳特创新科技有限公司 触摸屏
US8564954B2 (en) 2010-06-15 2013-10-22 Chipmos Technologies Inc. Thermally enhanced electronic package

Patent Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385975A (en) 1981-12-30 1983-05-31 International Business Machines Corp. Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate
JPH01132922A (ja) 1987-11-18 1989-05-25 Hitachi Ltd ダイナモメータの揺動機構
JPH01172581A (ja) 1987-12-25 1989-07-07 Toppan Printing Co Ltd ジャドウマスクの製造方法
JPH01250875A (ja) 1988-03-31 1989-10-05 Toshiba Corp 磁気センサー
JPH11305055A (ja) 1998-04-22 1999-11-05 Sharp Corp 光導波路の製造方法及び光導波路製造のためのマスタ原板の製造方法
US6344951B1 (en) 1998-12-14 2002-02-05 Alps Electric Co., Ltd. Substrate having magnetoresistive elements and monitor element capable of preventing a short circuit
JP2000232156A (ja) 1999-02-09 2000-08-22 Seiko Epson Corp 半導体装置の製造方法
US20040189295A1 (en) 2001-01-24 2004-09-30 Hideki Sato Magnetic sensor and method of producing the same
JP2002299728A (ja) 2001-01-24 2002-10-11 Yamaha Corp 磁気センサ及びその製造方法
JP3498737B2 (ja) 2001-01-24 2004-02-16 ヤマハ株式会社 磁気センサの製造方法
US6904669B2 (en) 2001-01-24 2005-06-14 Yamaha Corporation Magnetic sensor and method of producing the same
US20040212360A1 (en) 2001-01-24 2004-10-28 Yamaha Corporation Magnetic sensor and method of producing the same
JP2002324800A (ja) 2001-04-25 2002-11-08 Hitachi Ltd 半導体装置及びその製造方法
US6707298B2 (en) 2001-10-29 2004-03-16 Yamaha Corporation Magnetic sensor
JP2004006752A (ja) 2002-03-27 2004-01-08 Yamaha Corp 磁気センサおよびその製造方法
JP2004012156A (ja) 2002-06-04 2004-01-15 Wacoh Corp 三次元磁気センサおよびその製造方法
JP2004079820A (ja) 2002-08-20 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置
EP1411365A2 (de) 2002-10-18 2004-04-21 Yamaha Corporation Magnetfeldsensor und dessen Herstellungsverfahren
US20040080872A1 (en) 2002-10-18 2004-04-29 Hideki Sato Magnetic sensor and manufacturing method therefor
JP2004193540A (ja) 2002-10-18 2004-07-08 Yamaha Corp 磁気センサ及びその製造方法
US20040233588A1 (en) 2002-10-23 2004-11-25 Yamaha Corporation Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process
US20040104724A1 (en) 2002-11-29 2004-06-03 Hideki Sato Magnetic sensor, and method of compensating temperature-dependent characteristic of magnetic sensor
JP2004214267A (ja) 2002-12-27 2004-07-29 Nec Electronics Corp 半導体装置およびその製造方法
US20040163246A1 (en) 2003-02-21 2004-08-26 Renesas Technology Corp. Electronic device manufacturing method
CN1523658A (zh) 2003-02-21 2004-08-25 株式会社瑞萨科技 电子器件的制造方法
JP2004356338A (ja) 2003-05-28 2004-12-16 Res Inst Electric Magnetic Alloys 薄膜磁気センサ及びその製造方法
JP2005039010A (ja) 2003-07-18 2005-02-10 Yamaha Corp 磁気センサ
JP2005039011A (ja) 2003-07-18 2005-02-10 Yamaha Corp 磁気センサ
US20050270020A1 (en) 2004-06-03 2005-12-08 Honeywell International Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
US7687284B2 (en) 2005-01-13 2010-03-30 Yamaha Corporation Magnetic sensor and manufacturing method therefor
US20080169807A1 (en) 2005-03-17 2008-07-17 Hiroshi Naito Magnetic Sensor and Manufacturing Method Therefor

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Chinese Office Action dated Nov. 22, 2011 for corresponding CN 200680008164.2 (English translation attached).
Japanese Office Action dated May 17, 2011 issued to Japanese Application No. 2005-091617.
Japanese Office Action dated May 24, 2011 issued to Japanese Application No. 2005-098498.
Japanese Office Action dated May 24, 2011 issued to Japanese Application No. 2005-131857.
Yamaha Corp., Partial English Translation of JP2004006752A, Jan. 8, 2004. *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100327864A1 (en) * 2009-06-30 2010-12-30 Stmicroelectronics S.R.L. Magnetoresistive sensor and manufacturing method thereof
US8289021B2 (en) * 2009-06-30 2012-10-16 Stmicroelectronics S.R.L. Magnetoresistive sensor and manufacturing method thereof
US8901925B2 (en) 2009-06-30 2014-12-02 Stmicroelectronics S.R.L. Magnetoresistive sensor and manufacturing method thereof
US11372029B2 (en) * 2019-12-11 2022-06-28 Tdk Corporation Magnetic field detection apparatus and current detection apparatus
US11959943B2 (en) 2019-12-11 2024-04-16 Tdk Corporation Magnetic field detection apparatus and current detection apparatus
US20230093358A1 (en) * 2021-09-21 2023-03-23 Tdk Corporation Magnetic sensor
US12044754B2 (en) * 2021-09-21 2024-07-23 Tdk Corporation Magnetic sensor

Also Published As

Publication number Publication date
EP1860450B1 (de) 2011-06-08
TW200703732A (en) 2007-01-16
WO2006098367A1 (ja) 2006-09-21
TWI313078B (en) 2009-08-01
EP1860450A1 (de) 2007-11-28
US9054028B2 (en) 2015-06-09
EP1860450A4 (de) 2010-05-26
US20080169807A1 (en) 2008-07-17
US20120272514A1 (en) 2012-11-01

Similar Documents

Publication Publication Date Title
US8178361B2 (en) Magnetic sensor and manufacturing method therefor
US7687284B2 (en) Magnetic sensor and manufacturing method therefor
CN101142494B (zh) 磁传感器及其制造方法
KR100645291B1 (ko) 자기 센서 및 그 제조방법
US8207587B2 (en) Magnetic sensor and manufacturing method therefor
US10658575B2 (en) Method for magnetic device alignment on an integrated circuit
JP2004363157A (ja) 薄膜磁気センサ及びその製造方法
JP2002329662A (ja) オーバレイキー及びその製造方法とこれを利用したオーバレイ精度の測定方法
US8288242B2 (en) Overlay vernier key and method for fabricating the same
TWI814909B (zh) 多層對位標記及其對位方法
JP2006194733A (ja) 磁気センサおよびその製法
JP4760073B2 (ja) 磁気センサおよびその製法
JP4961736B2 (ja) 磁気センサの製造方法
JP2006278439A (ja) 磁気センサの製造方法
JP4984412B2 (ja) 磁気センサおよび磁気センサの製造方法
JP2003124445A (ja) 磁性記憶装置とその製造方法
JP5028769B2 (ja) 磁気センサの製法
TWI412776B (zh) 磁阻感測器及其製造方法
JP4734987B2 (ja) 磁気センサの製造方法
JP5447412B2 (ja) 磁気センサの製法
JP2006032710A (ja) 磁気センサの製造方法
JP4984424B2 (ja) 磁気センサおよびその製造方法
JP4972871B2 (ja) 磁気センサおよびその製造方法
JPH08321453A (ja) 半導体装置用目合わせ方式
JP2023128866A (ja) 磁気センサおよび磁気センサの製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: YAMAHA CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NAITO, HIROSHI;SATO, HIDEKI;WAKUI, YUKIO;AND OTHERS;REEL/FRAME:019360/0550

Effective date: 20060928

ZAAA Notice of allowance and fees due

Free format text: ORIGINAL CODE: NOA

ZAAB Notice of allowance mailed

Free format text: ORIGINAL CODE: MN/=.

ZAAA Notice of allowance and fees due

Free format text: ORIGINAL CODE: NOA

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20240515