US20040262254A1 - Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus - Google Patents

Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus Download PDF

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Publication number
US20040262254A1
US20040262254A1 US10/801,012 US80101204A US2004262254A1 US 20040262254 A1 US20040262254 A1 US 20040262254A1 US 80101204 A US80101204 A US 80101204A US 2004262254 A1 US2004262254 A1 US 2004262254A1
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United States
Prior art keywords
processed
treatment system
load lock
treatment
transfer
Prior art date
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Abandoned
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US10/801,012
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English (en)
Inventor
Jun Ozawa
Gaku Takahashi
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OZAWA, JUN, TAKAHASHI, GAKU
Publication of US20040262254A1 publication Critical patent/US20040262254A1/en
Priority to US12/542,063 priority Critical patent/US8623765B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
US10/801,012 2003-06-24 2004-03-16 Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus Abandoned US20040262254A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/542,063 US8623765B2 (en) 2003-06-24 2009-08-17 Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003179435 2003-06-24
JP2003-179435 2003-06-24
JP2003-422821 2003-12-19
JP2003422821A JP4833512B2 (ja) 2003-06-24 2003-12-19 被処理体処理装置、被処理体処理方法及び被処理体搬送方法

Related Child Applications (1)

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US12/542,063 Division US8623765B2 (en) 2003-06-24 2009-08-17 Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus

Publications (1)

Publication Number Publication Date
US20040262254A1 true US20040262254A1 (en) 2004-12-30

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US10/801,012 Abandoned US20040262254A1 (en) 2003-06-24 2004-03-16 Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus
US12/542,063 Expired - Fee Related US8623765B2 (en) 2003-06-24 2009-08-17 Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus

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Country Status (6)

Country Link
US (2) US20040262254A1 (de)
JP (1) JP4833512B2 (de)
KR (2) KR100736959B1 (de)
CN (2) CN100342518C (de)
DE (1) DE102004010688B4 (de)
TW (1) TWI361723B (de)

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US20040185583A1 (en) * 2003-03-17 2004-09-23 Tokyo Electron Limited Method of operating a system for chemical oxide removal
US20080178914A1 (en) * 2007-01-26 2008-07-31 Tokyo Electron Limited Substrate processing apparatus
US20080217293A1 (en) * 2007-03-06 2008-09-11 Tokyo Electron Limited Processing system and method for performing high throughput non-plasma processing
US20080257494A1 (en) * 2007-01-31 2008-10-23 Tokyo Electron Limited Substrate processing apparatus
US20080286491A1 (en) * 2007-01-31 2008-11-20 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US20080305632A1 (en) * 2006-02-13 2008-12-11 Toyota Electron Limited Substrate processing apparatus, substrate processing method and storage medium
US20080314882A1 (en) * 2001-08-29 2008-12-25 Bhullar Raghbir S Method of making a biosensor
US20110035957A1 (en) * 2006-12-26 2011-02-17 Tokyo Electron Limited Gas processing apparatus, gas processing method, and storage medium
US20150079801A1 (en) * 2012-05-23 2015-03-19 Tokyo Electron Limited Oxide etching method
US20150219565A1 (en) * 2014-02-04 2015-08-06 Applied Materials, Inc. Application of in-line thickness metrology and chamber matching in display manufacturing
US9236272B2 (en) 2012-09-14 2016-01-12 Tokyo Electron Limited Etching apparatus and etching method
US9406524B2 (en) 2013-10-17 2016-08-02 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US20160336196A1 (en) * 2015-05-14 2016-11-17 SK Hynix Inc. Apparatus and method for removing particles present on a wafer using photoelectrons and an electric field
US10290553B2 (en) * 2015-06-24 2019-05-14 Tokyo Electron Limited System and method of determining process completion of post heat treatment of a dry etch process
US10388553B2 (en) * 2015-12-28 2019-08-20 Asm Ip Holding B.V. Substrate processing system
CN112397411A (zh) * 2019-08-13 2021-02-23 台湾积体电路制造股份有限公司 包含抽出装置的制程系统及其监测方法
US20220199440A1 (en) * 2020-12-17 2022-06-23 Samsung Electronics Co., Ltd. Apparatus for processing a substrate
CN115088922A (zh) * 2022-06-17 2022-09-23 瑞安市大虎鞋业有限公司 一种皮鞋生产加工用表面清灰装置及其使用方法
WO2023023001A1 (en) * 2021-08-16 2023-02-23 Applied Materials, Inc. Prevention of contamination of substrates during pressure changes in processing systems

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JP5001388B2 (ja) * 2003-06-24 2012-08-15 東京エレクトロン株式会社 被処理体処理装置の圧力制御方法
JP4860219B2 (ja) * 2005-02-14 2012-01-25 東京エレクトロン株式会社 基板の処理方法、電子デバイスの製造方法及びプログラム
JP4843285B2 (ja) * 2005-02-14 2011-12-21 東京エレクトロン株式会社 電子デバイスの製造方法及びプログラム
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
JP2007088401A (ja) * 2005-08-25 2007-04-05 Tokyo Electron Ltd 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
JP4791110B2 (ja) * 2005-09-02 2011-10-12 東京エレクトロン株式会社 真空チャンバおよび真空処理装置
JP5046506B2 (ja) * 2005-10-19 2012-10-10 東京エレクトロン株式会社 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
JP4890025B2 (ja) * 2005-12-28 2012-03-07 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP4854317B2 (ja) 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
US7660640B2 (en) * 2006-03-07 2010-02-09 Siemens Aktiengesellschaft Apparatus and method for predictive control of a power generation system
JP4688764B2 (ja) * 2006-09-19 2011-05-25 東京エレクトロン株式会社 基板処理装置の載置台除電方法
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JP5374039B2 (ja) 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
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CN104094394A (zh) * 2012-02-08 2014-10-08 应用材料公司 用于分散的基板的具有蜂巢式结构的动态负载锁定
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JP2005039185A (ja) 2005-02-10
KR100736959B1 (ko) 2007-07-09
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DE102004010688A1 (de) 2005-02-17
KR20050001299A (ko) 2005-01-06

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