US20020130311A1 - Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices - Google Patents

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices Download PDF

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Publication number
US20020130311A1
US20020130311A1 US09/935,776 US93577601A US2002130311A1 US 20020130311 A1 US20020130311 A1 US 20020130311A1 US 93577601 A US93577601 A US 93577601A US 2002130311 A1 US2002130311 A1 US 2002130311A1
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United States
Prior art keywords
semiconductor
nanometers
doped
less
bulk
Prior art date
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Abandoned
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US09/935,776
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English (en)
Inventor
Charles Lieber
Yi Cui
Xiangfeng Duan
Yu Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harvard College
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to US09/935,776 priority Critical patent/US20020130311A1/en
Application filed by Individual filed Critical Individual
Assigned to PRESIDENT AND FELLOWS OF HARVARD COLLEGE reassignment PRESIDENT AND FELLOWS OF HARVARD COLLEGE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CUI, YI, DUAN, XIANGFENG, HUANG, YU, LIEBER, CHARLES M.
Priority to JP2003511316A priority patent/JP2004535066A/ja
Priority to EP02759070A priority patent/EP1436841A1/en
Priority to PCT/US2002/016133 priority patent/WO2003005450A2/en
Priority to CA002447728A priority patent/CA2447728A1/en
Priority to AU2002324426A priority patent/AU2002324426B2/en
Priority to US10/196,337 priority patent/US7301199B2/en
Publication of US20020130311A1 publication Critical patent/US20020130311A1/en
Priority to US11/082,372 priority patent/US7211464B2/en
Priority to US11/172,408 priority patent/US20060175601A1/en
Priority to US11/386,080 priority patent/US20070281156A1/en
Priority to US11/543,352 priority patent/US7666708B2/en
Priority to US11/543,326 priority patent/US7595260B2/en
Priority to US11/543,336 priority patent/US7476596B2/en
Priority to US11/543,337 priority patent/US8153470B2/en
Priority to US11/543,746 priority patent/US20070032052A1/en
Priority to US11/543,353 priority patent/US7915151B2/en
Priority to US11/824,618 priority patent/US20070252136A1/en
Priority to US12/072,844 priority patent/US20090057650A1/en
Priority to JP2008156094A priority patent/JP2008300848A/ja
Assigned to NAVY, SECRETARY OF THE, UNITED STATES OF AMERICA reassignment NAVY, SECRETARY OF THE, UNITED STATES OF AMERICA CONFIRMATORY LICENSE (SEE DOCUMENT FOR DETAILS). Assignors: HARVARD UNIVERSITY
Priority to US12/459,177 priority patent/US20100155698A1/en
Priority to US13/490,325 priority patent/US20120329251A1/en
Abandoned legal-status Critical Current

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US09/935,776 US20020130311A1 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
AU2002324426A AU2002324426B2 (en) 2000-08-22 2002-05-20 Nanoscale wires and related devices
CA002447728A CA2447728A1 (en) 2001-05-18 2002-05-20 Nanoscale wires and related devices
EP02759070A EP1436841A1 (en) 2001-05-18 2002-05-20 Nanoscale wires and related devices
PCT/US2002/016133 WO2003005450A2 (en) 2001-05-18 2002-05-20 Nanoscale wires and related devices
JP2003511316A JP2004535066A (ja) 2001-05-18 2002-05-20 ナノスケールワイヤ及び関連デバイス
US10/196,337 US7301199B2 (en) 2000-08-22 2002-07-16 Nanoscale wires and related devices
US11/082,372 US7211464B2 (en) 2000-08-22 2005-03-17 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US11/172,408 US20060175601A1 (en) 2000-08-22 2005-06-30 Nanoscale wires and related devices
US11/386,080 US20070281156A1 (en) 2000-08-22 2006-03-21 Nanoscale wires and related devices
US11/543,353 US7915151B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US11/543,352 US7666708B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,746 US20070032052A1 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,326 US7595260B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,336 US7476596B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,337 US8153470B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/824,618 US20070252136A1 (en) 2000-08-22 2007-07-02 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US12/072,844 US20090057650A1 (en) 2000-08-22 2008-02-27 Nanoscale wires and related devices
JP2008156094A JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス
US12/459,177 US20100155698A1 (en) 2000-08-22 2009-06-26 Nanoscale wires and related devices
US13/490,325 US20120329251A1 (en) 2000-08-22 2012-06-06 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

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US29204501P 2001-05-18 2001-05-18
US29212101P 2001-05-18 2001-05-18
US29189601P 2001-05-18 2001-05-18
US09/935,776 US20020130311A1 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

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US11/082,372 Division US7211464B2 (en) 2000-08-22 2005-03-17 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US11/543,337 Continuation US8153470B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,353 Continuation US7915151B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US11/543,746 Continuation US20070032052A1 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,336 Continuation US7476596B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,326 Continuation US7595260B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

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US11/543,353 Expired - Fee Related US7915151B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US11/543,337 Expired - Fee Related US8153470B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,746 Abandoned US20070032052A1 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,326 Expired - Lifetime US7595260B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,336 Expired - Lifetime US7476596B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,352 Expired - Lifetime US7666708B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/824,618 Abandoned US20070252136A1 (en) 2000-08-22 2007-07-02 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US13/490,325 Abandoned US20120329251A1 (en) 2000-08-22 2012-06-06 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

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US11/543,337 Expired - Fee Related US8153470B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,746 Abandoned US20070032052A1 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,326 Expired - Lifetime US7595260B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,336 Expired - Lifetime US7476596B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/543,352 Expired - Lifetime US7666708B2 (en) 2000-08-22 2006-10-04 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
US11/824,618 Abandoned US20070252136A1 (en) 2000-08-22 2007-07-02 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US13/490,325 Abandoned US20120329251A1 (en) 2000-08-22 2012-06-06 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

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