US20100326495A1 - Self-cleaning protective coatings for use with photovoltaic cells - Google Patents
Self-cleaning protective coatings for use with photovoltaic cells Download PDFInfo
- Publication number
- US20100326495A1 US20100326495A1 US12/875,059 US87505910A US2010326495A1 US 20100326495 A1 US20100326495 A1 US 20100326495A1 US 87505910 A US87505910 A US 87505910A US 2010326495 A1 US2010326495 A1 US 2010326495A1
- Authority
- US
- United States
- Prior art keywords
- self
- photovoltaic cell
- cleaning
- layer
- cell system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 209
- 239000011253 protective coating Substances 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 109
- 238000000429 assembly Methods 0.000 claims abstract description 35
- 230000000712 assembly Effects 0.000 claims abstract description 35
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 314
- 230000001699 photocatalysis Effects 0.000 claims description 64
- -1 polytetrafluoroethylene Polymers 0.000 claims description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 34
- 229920001577 copolymer Polymers 0.000 claims description 32
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 17
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 16
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 14
- 239000002105 nanoparticle Substances 0.000 claims description 14
- 229920006362 Teflon® Polymers 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 12
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 claims description 10
- 229920002050 silicone resin Polymers 0.000 claims description 10
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 8
- 239000005977 Ethylene Substances 0.000 claims description 8
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 8
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 8
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 claims description 8
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 claims description 8
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 4
- JRGQKLFZSNYTDX-UHFFFAOYSA-N 3-(oxiran-2-ylmethoxy)propyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)CCCOCC1CO1 JRGQKLFZSNYTDX-UHFFFAOYSA-N 0.000 claims description 4
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 claims description 4
- MBNRBJNIYVXSQV-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propane-1-thiol Chemical compound CCO[Si](C)(OCC)CCCS MBNRBJNIYVXSQV-UHFFFAOYSA-N 0.000 claims description 4
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 claims description 4
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 claims description 4
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 claims description 4
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 claims description 4
- XKQXZSHRPUFBSW-UHFFFAOYSA-N 3-[tris[(2-methylpropan-2-yl)oxy]silyl]propan-1-amine Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)CCCN XKQXZSHRPUFBSW-UHFFFAOYSA-N 0.000 claims description 4
- LQMCVFDSKWCIGP-UHFFFAOYSA-N 3-[tris[(2-methylpropan-2-yl)oxy]silyl]propane-1-thiol Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)CCCS LQMCVFDSKWCIGP-UHFFFAOYSA-N 0.000 claims description 4
- WALYBSCHCQWCPC-UHFFFAOYSA-N 3-[tris[(2-methylpropan-2-yl)oxy]silyl]propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C WALYBSCHCQWCPC-UHFFFAOYSA-N 0.000 claims description 4
- OXKAXHPVFLEQHV-UHFFFAOYSA-N 3-tri(propan-2-yloxy)silylpropan-1-amine Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)CCCN OXKAXHPVFLEQHV-UHFFFAOYSA-N 0.000 claims description 4
- CJUFQURUUZMUOG-UHFFFAOYSA-N 3-tri(propan-2-yloxy)silylpropane-1-thiol Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)CCCS CJUFQURUUZMUOG-UHFFFAOYSA-N 0.000 claims description 4
- CHPNMYQJQQGAJS-UHFFFAOYSA-N 3-tri(propan-2-yloxy)silylpropyl 2-methylprop-2-enoate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)CCCOC(=O)C(C)=C CHPNMYQJQQGAJS-UHFFFAOYSA-N 0.000 claims description 4
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 claims description 4
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 claims description 4
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 4
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 claims description 4
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002033 PVDF binder Substances 0.000 claims description 4
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 4
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 claims description 4
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 claims description 4
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 4
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 claims description 4
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 claims description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 claims description 4
- WUSDGIZCXCUHAI-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)CCCOCC1CO1 WUSDGIZCXCUHAI-UHFFFAOYSA-N 0.000 claims description 4
- 229920001567 vinyl ester resin Polymers 0.000 claims description 4
- AGZQGENSWWIMDF-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy-phenylsilane Chemical compound CC(C)(C)O[SiH2]c1ccccc1 AGZQGENSWWIMDF-UHFFFAOYSA-N 0.000 claims description 3
- 229920002799 BoPET Polymers 0.000 claims description 3
- UWMGVIKSCFGFDR-UHFFFAOYSA-N benzyl(dibromo)silane Chemical compound Br[SiH](Br)CC1=CC=CC=C1 UWMGVIKSCFGFDR-UHFFFAOYSA-N 0.000 claims description 3
- BAAAEEDPKUHLID-UHFFFAOYSA-N decyl(triethoxy)silane Chemical compound CCCCCCCCCC[Si](OCC)(OCC)OCC BAAAEEDPKUHLID-UHFFFAOYSA-N 0.000 claims description 3
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 claims description 3
- LILGYOCNANBWTO-UHFFFAOYSA-N decyl-tri(propan-2-yloxy)silane Chemical compound CCCCCCCCCC[Si](OC(C)C)(OC(C)C)OC(C)C LILGYOCNANBWTO-UHFFFAOYSA-N 0.000 claims description 3
- AGUMJWWZSTXCAM-UHFFFAOYSA-N decyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CCCCCCCCCC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C AGUMJWWZSTXCAM-UHFFFAOYSA-N 0.000 claims description 3
- LIQOCGKQCFXKLF-UHFFFAOYSA-N dibromo(dimethyl)silane Chemical compound C[Si](C)(Br)Br LIQOCGKQCFXKLF-UHFFFAOYSA-N 0.000 claims description 3
- DBUGVTOEUNNUHR-UHFFFAOYSA-N dibromo(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](Br)(Br)C1=CC=CC=C1 DBUGVTOEUNNUHR-UHFFFAOYSA-N 0.000 claims description 3
- OSXYHAQZDCICNX-UHFFFAOYSA-N dichloro(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](Cl)(Cl)C1=CC=CC=C1 OSXYHAQZDCICNX-UHFFFAOYSA-N 0.000 claims description 3
- GNEPOXWQWFSSOU-UHFFFAOYSA-N dichloro-methyl-phenylsilane Chemical compound C[Si](Cl)(Cl)C1=CC=CC=C1 GNEPOXWQWFSSOU-UHFFFAOYSA-N 0.000 claims description 3
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 claims description 3
- MNFGEHQPOWJJBH-UHFFFAOYSA-N diethoxy-methyl-phenylsilane Chemical compound CCO[Si](C)(OCC)C1=CC=CC=C1 MNFGEHQPOWJJBH-UHFFFAOYSA-N 0.000 claims description 3
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 3
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 claims description 3
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 claims description 3
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 claims description 3
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 3
- MABAWBWRUSBLKQ-UHFFFAOYSA-N ethenyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C=C MABAWBWRUSBLKQ-UHFFFAOYSA-N 0.000 claims description 3
- BQRPSOKLSZSNAR-UHFFFAOYSA-N ethenyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)C=C BQRPSOKLSZSNAR-UHFFFAOYSA-N 0.000 claims description 3
- MYEJNNDSIXAGNK-UHFFFAOYSA-N ethyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](CC)(OC(C)C)OC(C)C MYEJNNDSIXAGNK-UHFFFAOYSA-N 0.000 claims description 3
- ZVQNVYMTWXEMSF-UHFFFAOYSA-N ethyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](CC)(OC(C)(C)C)OC(C)(C)C ZVQNVYMTWXEMSF-UHFFFAOYSA-N 0.000 claims description 3
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 claims description 3
- DPTKSEHTOJHGOV-UHFFFAOYSA-N hexyl-tri(propan-2-yloxy)silane Chemical compound CCCCCC[Si](OC(C)C)(OC(C)C)OC(C)C DPTKSEHTOJHGOV-UHFFFAOYSA-N 0.000 claims description 3
- QECCXOBPOBIUMS-UHFFFAOYSA-N hexyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CCCCCC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C QECCXOBPOBIUMS-UHFFFAOYSA-N 0.000 claims description 3
- 239000005055 methyl trichlorosilane Substances 0.000 claims description 3
- HLXDKGBELJJMHR-UHFFFAOYSA-N methyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C)(OC(C)C)OC(C)C HLXDKGBELJJMHR-UHFFFAOYSA-N 0.000 claims description 3
- AHQDZKRRVNGIQL-UHFFFAOYSA-N methyl-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](C)(OC(C)(C)C)OC(C)(C)C AHQDZKRRVNGIQL-UHFFFAOYSA-N 0.000 claims description 3
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 3
- VPLNCHFJAOKWBT-UHFFFAOYSA-N phenyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)C1=CC=CC=C1 VPLNCHFJAOKWBT-UHFFFAOYSA-N 0.000 claims description 3
- 239000005054 phenyltrichlorosilane Substances 0.000 claims description 3
- PCADGSDEFOMDNL-UHFFFAOYSA-N tri(propan-2-yloxy)-(3,3,3-trifluoropropyl)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)CCC(F)(F)F PCADGSDEFOMDNL-UHFFFAOYSA-N 0.000 claims description 3
- MQVCTPXBBSKLFS-UHFFFAOYSA-N tri(propan-2-yloxy)-propylsilane Chemical compound CCC[Si](OC(C)C)(OC(C)C)OC(C)C MQVCTPXBBSKLFS-UHFFFAOYSA-N 0.000 claims description 3
- MLZOPJVPCGTFGS-UHFFFAOYSA-N tribromo(3,3,3-trifluoropropyl)silane Chemical compound FC(F)(F)CC[Si](Br)(Br)Br MLZOPJVPCGTFGS-UHFFFAOYSA-N 0.000 claims description 3
- LYZDWEPTQWHDLZ-UHFFFAOYSA-N tribromo(decyl)silane Chemical compound CCCCCCCCCC[Si](Br)(Br)Br LYZDWEPTQWHDLZ-UHFFFAOYSA-N 0.000 claims description 3
- BZAROSBWJASVBU-UHFFFAOYSA-N tribromo(ethenyl)silane Chemical compound Br[Si](Br)(Br)C=C BZAROSBWJASVBU-UHFFFAOYSA-N 0.000 claims description 3
- KVENDAGPVNAYLY-UHFFFAOYSA-N tribromo(ethyl)silane Chemical compound CC[Si](Br)(Br)Br KVENDAGPVNAYLY-UHFFFAOYSA-N 0.000 claims description 3
- VRUFDMFAHKOFOT-UHFFFAOYSA-N tribromo(hexyl)silane Chemical compound CCCCCC[Si](Br)(Br)Br VRUFDMFAHKOFOT-UHFFFAOYSA-N 0.000 claims description 3
- KBSUPJLTDMARAI-UHFFFAOYSA-N tribromo(methyl)silane Chemical compound C[Si](Br)(Br)Br KBSUPJLTDMARAI-UHFFFAOYSA-N 0.000 claims description 3
- HPTIEXHGTPSFDC-UHFFFAOYSA-N tribromo(phenyl)silane Chemical compound Br[Si](Br)(Br)C1=CC=CC=C1 HPTIEXHGTPSFDC-UHFFFAOYSA-N 0.000 claims description 3
- RWRKNKVDHIEKHS-UHFFFAOYSA-N tribromo(propyl)silane Chemical compound CCC[Si](Br)(Br)Br RWRKNKVDHIEKHS-UHFFFAOYSA-N 0.000 claims description 3
- WEUBQNJHVBMUMD-UHFFFAOYSA-N trichloro(3,3,3-trifluoropropyl)silane Chemical compound FC(F)(F)CC[Si](Cl)(Cl)Cl WEUBQNJHVBMUMD-UHFFFAOYSA-N 0.000 claims description 3
- HLWCOIUDOLYBGD-UHFFFAOYSA-N trichloro(decyl)silane Chemical compound CCCCCCCCCC[Si](Cl)(Cl)Cl HLWCOIUDOLYBGD-UHFFFAOYSA-N 0.000 claims description 3
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 claims description 3
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 claims description 3
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 claims description 3
- DOEHJNBEOVLHGL-UHFFFAOYSA-N trichloro(propyl)silane Chemical compound CCC[Si](Cl)(Cl)Cl DOEHJNBEOVLHGL-UHFFFAOYSA-N 0.000 claims description 3
- ZLGWXNBXAXOQBG-UHFFFAOYSA-N triethoxy(3,3,3-trifluoropropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)F ZLGWXNBXAXOQBG-UHFFFAOYSA-N 0.000 claims description 3
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 claims description 3
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 claims description 3
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 claims description 3
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 claims description 3
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 claims description 3
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 3
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 claims description 3
- JIOBRIJHDZBWDE-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-(3,3,3-trifluoropropyl)silane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)CCC(F)(F)F JIOBRIJHDZBWDE-UHFFFAOYSA-N 0.000 claims description 3
- DIZPPYBTFPZSGK-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-propylsilane Chemical compound CCC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C DIZPPYBTFPZSGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000005050 vinyl trichlorosilane Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 324
- 210000004027 cell Anatomy 0.000 description 194
- 239000004065 semiconductor Substances 0.000 description 44
- 238000000576 coating method Methods 0.000 description 37
- 239000011248 coating agent Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 27
- 230000002209 hydrophobic effect Effects 0.000 description 25
- 239000002245 particle Substances 0.000 description 24
- 239000006096 absorbing agent Substances 0.000 description 22
- 239000003973 paint Substances 0.000 description 22
- 239000010936 titanium Substances 0.000 description 22
- 239000000243 solution Substances 0.000 description 21
- 229910052719 titanium Inorganic materials 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 230000005855 radiation Effects 0.000 description 18
- 239000010409 thin film Substances 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 16
- 239000002253 acid Substances 0.000 description 10
- 238000013459 approach Methods 0.000 description 10
- 239000002585 base Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 230000007062 hydrolysis Effects 0.000 description 10
- 238000006460 hydrolysis reaction Methods 0.000 description 10
- 239000011941 photocatalyst Substances 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 238000006116 polymerization reaction Methods 0.000 description 9
- 229910001887 tin oxide Inorganic materials 0.000 description 9
- 229910004613 CdTe Inorganic materials 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 8
- 230000018044 dehydration Effects 0.000 description 8
- 238000006297 dehydration reaction Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 239000004809 Teflon Substances 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 240000002853 Nelumbo nucifera Species 0.000 description 6
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052809 inorganic oxide Inorganic materials 0.000 description 6
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 5
- 229910003074 TiCl4 Inorganic materials 0.000 description 5
- 229910007709 ZnTe Inorganic materials 0.000 description 5
- 238000001354 calcination Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 150000002484 inorganic compounds Chemical class 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 239000000725 suspension Substances 0.000 description 5
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 4
- 239000013522 chelant Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000008199 coating composition Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052588 hydroxylapatite Inorganic materials 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 238000010422 painting Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 4
- 229910011006 Ti(SO4)2 Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000693 micelle Substances 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 235000010755 mineral Nutrition 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- HDUMBHAAKGUHAR-UHFFFAOYSA-J titanium(4+);disulfate Chemical compound [Ti+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O HDUMBHAAKGUHAR-UHFFFAOYSA-J 0.000 description 3
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 241000894006 Bacteria Species 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007540 photo-reduction reaction Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 2
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 2
- 150000003609 titanium compounds Chemical class 0.000 description 2
- XDRLAGOBLZATBG-UHFFFAOYSA-N 1-phenylpenta-1,4-dien-3-one Chemical compound C=CC(=O)C=CC1=CC=CC=C1 XDRLAGOBLZATBG-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910003373 AgInS2 Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RTWXRJAGOPSUMX-UHFFFAOYSA-N C1(=CC=CC=C1)C[SiH](OCC)OCC.C1(=CC=CC=C1)C[SiH](OC)OC Chemical compound C1(=CC=CC=C1)C[SiH](OCC)OCC.C1(=CC=CC=C1)C[SiH](OC)OC RTWXRJAGOPSUMX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 241000195493 Cryptophyta Species 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical class OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000013504 Triton X-100 Substances 0.000 description 1
- 229920004890 Triton X-100 Polymers 0.000 description 1
- 229910007475 ZnGeP2 Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- PKLGPLDEALFDSB-UHFFFAOYSA-N [SeH-]=[Se].[In+3].[Cu+2].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se] Chemical compound [SeH-]=[Se].[In+3].[Cu+2].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se] PKLGPLDEALFDSB-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 238000001856 aerosol method Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000007248 cellular mechanism Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- XGZNHFPFJRZBBT-UHFFFAOYSA-N ethanol;titanium Chemical compound [Ti].CCO.CCO.CCO.CCO XGZNHFPFJRZBBT-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- YWQBJUKLCGPFPO-UHFFFAOYSA-N hexyl(trimethoxy)silane;triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OC)(OC)OC.CCCCCC[Si](OCC)(OCC)OCC YWQBJUKLCGPFPO-UHFFFAOYSA-N 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 210000004692 intercellular junction Anatomy 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000002147 killing effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- ZEIWWVGGEOHESL-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC.OC.OC.OC ZEIWWVGGEOHESL-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- NKAAEMMYHLFEFN-UHFFFAOYSA-M monosodium tartrate Chemical compound [Na+].OC(=O)C(O)C(O)C([O-])=O NKAAEMMYHLFEFN-UHFFFAOYSA-M 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical class [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 description 1
- XYJRXVWERLGGKC-UHFFFAOYSA-D pentacalcium;hydroxide;triphosphate Chemical compound [OH-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O XYJRXVWERLGGKC-UHFFFAOYSA-D 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000013032 photocatalytic reaction Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000010020 roller printing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- UWZSHGZRSZICIW-UHFFFAOYSA-N triethoxy(2,4,4-trimethylpentyl)silane Chemical compound CCO[Si](OCC)(OCC)CC(C)CC(C)(C)C UWZSHGZRSZICIW-UHFFFAOYSA-N 0.000 description 1
- HVOGPVOEUNADCC-UHFFFAOYSA-N triethoxy(3,3,3-trifluoropropyl)silane trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F.CCO[Si](OCC)(OCC)CCC(F)(F)F HVOGPVOEUNADCC-UHFFFAOYSA-N 0.000 description 1
- JOQQHTRGAOMKIN-UHFFFAOYSA-N triethoxy(phenyl)silane;trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1.CCO[Si](OCC)(OCC)C1=CC=CC=C1 JOQQHTRGAOMKIN-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/10—Cleaning arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
Definitions
- This invention generally relates to photovoltaic cell assemblies for converting photovoltaic energy into electrical energy and more particularly to improved photovoltaic cell energy conversion by maintaining the high albedo of the surrounding environment of photovoltaic cells.
- Photovoltaic cells comprise semiconductor junctions such as p-n junctions. It is known that light with photon energy greater than the band gap of an absorbing semiconductor layer in a semiconductor junction is absorbed by the layer. Such absorption causes optical excitation and the release of free electrons and free holes in the semiconductor. Because of the potential difference that exists at a semiconductor junction (e.g., a p-n junction), these released holes and electrons move across the junction in opposite directions and thereby give rise to flow of an electric current that is capable of delivering power to an external circuit.
- a semiconductor junction e.g., a p-n junction
- J amp cm ⁇ 2 The flow of carriers into the external circuit constitutes an electrical current density, J amp cm ⁇ 2 , which, under short-circuit conditions, is known as the short-circuit current density, J sc .
- the separation of the charges (holes and electrons) sets up a potential difference between the two ends of the material, ⁇ , which under open circuit conditions is known as the open-circuit voltage, ⁇ OC . It is desirable to maximize both J sc and ⁇ OC .
- J sc and ⁇ OC are optimized when the junction semiconductor absorber has a band gap of about 1.4 electron volts (eV).
- photovoltaic cells are made of silicon.
- cells made of other materials e.g., cadmium sulfide and gallium arsenide, have also been developed and tested.
- Crystalline silicon has traditionally been a favored material since it has a band gap of approximately 1.1 eV and thus favorably responds to the electromagnetic energy of the solar spectrum.
- thin film photovoltaic cells made of materials other than silicon have been explored and used.
- photovoltaic cells are fabricated as separate physical entities with light gathering surface areas on the order of 4-6 cm 2 or larger. For this reason, it is standard practice for power generating applications to mount the cells in a flat array on a supporting substrate or panel so that their light gathering surfaces provide an approximation of a single large light gathering surface. Also, since each cell itself generates only a small amount of power, the required voltage and/or current is realized by interconnecting the cells of the array in a series and/or parallel matrix.
- FIG. 1 The structure of a conventional prior art photovoltaic cell panel is shown in FIG. 1 . Because of the large range in the thickness of the different layers, they are depicted schematically. Moreover, FIG. 1 is highly schematized so that it will represent the features of both “thick-film” photovoltaic cells and “thin-film” photovoltaic cells.
- photovoltaic cells that use an indirect band gap material to absorb light are typically configured as “thick-film” photovoltaic cells because a thick film of the absorber layer is required to absorb a sufficient amount of light.
- Photovoltaic cells that use direct band gap materials to absorb light are typically configured as “thin-film” photovoltaic cells because only a thin layer of the direct band-gap material is need to absorb a sufficient amount of light.
- Layer (element) 102 is the substrate. Glass or metal is a common substrate. In thin-film photovoltaic cells, substrate 102 can be-a polymer-based backing, metal, or glass. In some instances, there is an encapsulation layer, not shown, coating substrate 102 .
- Layer 104 is the back electrical contact for the photovoltaic cell. It makes ohmic contact with the absorber layer of semiconductor junction 106 .
- Layer 106 is the semiconductor absorber layer. In many but not all cases, it is a p-type semiconductor. Absorber layer 106 is thick enough to absorb light.
- Layer 108 is the semiconductor junction partner-that completes the formation of a p-n junction, which is a common type of junction found in photovoltaic cells. In a photovoltaic cell based on a p-n junction, when absorber 106 is a p-type doped material, junction partner 108 is an n-type doped material. Conversely, when layer 106 is an n-type doped material, layer 108 is a p-type doped material. Generally, junction partner 108 is much thinner than absorber 106 . For example, in some instances junction partner 108 has a thickness of about 0.05 microns. Junction partner 108 is highly transparent to solar radiation. Junction partner 108 is also known as the window layer, since it lets the light pass down to absorber layer 106 .
- layers 106 and 108 can be made from the same semiconductor material but have different carrier types (dopants) and/or carrier concentrations in order to give the two layers their distinct p-type and n-type properties.
- dopants copper-indium-gallium-diselenide
- the use of CdS to form layer 108 has resulted in high efficiency cells.
- Other materials that can be used for layer 108 include, but are not limited to, SnO 2 , ZnO, ZrO 2 and doped ZnO.
- Layer 110 is the top transparent electrode, which completes the functioning cell. Layer 110 is used to draw current away from the junction since junction partner 108 is generally too resistive to serve this function. As such, layer 110 should be highly conductive and transparent to light. Layer 110 can in fact be a comb-like structure of metal printed onto layer 108 rather than forming a discrete layer. Layer 110 is typically a transparent conductive oxide (TCO) such as zinc oxide (ZnO), indium-tin-oxide (ITO), or tin oxide (SnO 2 ). However, even when a TCO layer is present, a bus bar network 114 is typically needed to draw off current since the TCO has too much resistance to efficiently perform this function in larger photovoltaic cells.
- TCO transparent conductive oxide
- ZnO zinc oxide
- ITO indium-tin-oxide
- SnO 2 tin oxide
- Network 114 shortens the distance charger carriers must move in the TCO layer in order to reach the metal contact, thereby reducing resistive losses.
- the metal bus bars also termed grid lines, can be made of any reasonably conductive metal such as, for example, silver, steel or aluminum. There is design a tradeoff in network 114 between thicker grid lines that are more electrically conductive but block more light, and thin grid lines that are less electrically conductive but block less light.
- the metal bars are preferably configured in a comb-like arrangement to permit light rays through TCO layer 110 .
- Bus bar network layer 114 and TCO layer 110 combined, act as a single metallurgical unit, functionally interfacing with a first ohmic contact to form a current collection circuit.
- Layer 112 is an antireflection (AR) coating, which can allow a significant amount of extra light into the cell. Depending on the intended use of the cell, it might be deposited directly on the top conductor (as illustrated), or on a separate cover glass, or both. Ideally, the AR coating reduces the reflection of the cell to very near zero over the spectral region that photoelectric absorption occurs, and at the same time increases the reflection in the other spectral regions to reduce heating.
- AR antireflection
- Photovoltaic cells typically produce only a small voltage.
- silicon based photovoltaic cells produce a voltage of about 0.6 volts (V).
- V 0.6 volts
- photovoltaic cells are interconnected in series or parallel in order to get a reasonable voltage.
- voltages of individual cells add together while current remains the same.
- photovoltaic cells arranged in series reduce the amount of current flow through such cells, compared to analogous photovoltaic cells arrange in parallel, thereby improving efficiency.
- the arrangement of photovoltaic cells in series is accomplished using interconnects 116 .
- an interconnect 116 places the first electrode of one photovoltaic cell in electrical communication with the counterelectrode of an adjoining photovoltaic cell.
- conventional photovoltaic cells are typically in the form of a plate structure. Although such cells are highly efficient when they are smaller, larger planar photovoltaic cells have reduced efficiency because it is harder to make the semiconductor films that form the junction in such photovoltaic cells uniform. Furthermore, the occurrence of pinholes and similar flaws increase in larger planar photovoltaic cells. These features can cause shunts across the junction.
- junction type Detailed descriptions of various types of photovoltaic cells within the scope of the present invention, as defined by junction type, are in Section 5.4, below.
- photovoltaic cells function by converting solar radiation into electrical energy.
- efficiency of a specific type of photovoltaic cell is proportional to the amount of photovoltaic radiation that is absorbed by the cell.
- Such absorption is influenced by numerous conditions including but not limited to cloud cover, location, geographic latitude, and time of the day. For example, an extremely cloudy day reduces the amount of photovoltaic radiation available for absorption by a photovoltaic cell system.
- workers have developed photovoltaic cell architectures such as the bi-facial photovoltaic array that has both a front and a back panel.
- U.S. Pat. No. 5,990,413 to Ortabasi et al. describes such photovoltaic cell panels.
- the goal of the bi-facial design is to take advantage of both direct solar radiation and albedo.
- Albedo is the fraction of incident electromagnetic radiation reflected by a surface. Albedo measures the reflectivity of a surface or body. It is the ratio of electromagnetic radiation reflected to the amount incident upon it. This ratio is a percentage that ranges anywhere from zero percent to one hundred percent. The amount of albedo a material exhibits is a function of its physical properties. Albedo is a product of the reflection of the incident solar radiation by the surroundings of the photovoltaic cells, such as sand, snow, water, rocks, grass, and buildings. Albedo is strongly dependent upon the nature of the environment. For example, albedo due to fresh snow can be higher than seventy percent while albedo due to large bodies of water is less than ten percent. In some instances, enhanced albedo improves the efficiency of existing photovoltaic cell assemblies.
- cleaning albedo surfaces is a necessary task in order to maintain the albedo properties of such surfaces
- cleaning of photovoltaic cell panels themselves is necessary as well.
- cleaning has the same drawbacks as the cleaning of albedo surfaces. Namely, such cleaning is time consuming, can degrade the material properties of the panels through adverse interaction (chemical, abrasive, or otherwise) with the cleaning agents, and is expensive.
- cleaning may be necessary since any debris build up on photovoltaic cell panel surfaces adversely affects their efficiency.
- the present invention provides systems and methods for maintaining the efficiency of photovoltaic cells.
- the present invention provides systems and methods for maintaining self-cleaning albedo surfaces and self-cleaning photovoltaic cell panels.
- Self-cleaning albedo surfaces and photovoltaic cell panels are produced by applying one or more layers of self-cleaning material onto the surface of photovoltaic cell panels as well as albedo surfaces. In this way, the drawbacks found in the prior art, namely laborious time consuming cleaning and repainting efforts, are minimized, thereby yielding a more efficient cost effective photovoltaic cell system.
- One aspect of the invention provides a photovoltaic cell system comprising a plurality of photovoltaic cell assemblies.
- Each assembly in the plurality of photovoltaic cell assemblies comprises a front side. Each of these front sides is configured to receive electromagnetic energy.
- Each of the photovoltaic assemblies in the plurality of photovoltaic assemblies is configured to convert electromagnetic energy into an electrical current.
- the photovoltaic cell system further comprises an albedo surface configured to reflect electromagnetic energy on one or more photovoltaic cell assemblies in the plurality of photovoltaic cell assemblies.
- the albedo surface comprises a high albedo layer and a self-cleaning layer disposed on the high albedo layer.
- the self-cleaning layer comprises a photocatalytic material, Ti-hydroxyapetite, anatase TiO 2 , rutile TiO 2 or brookitein TiO 2 . In some embodiments, the self-cleaning layer comprises between 1 percent TiO 2 and 90 percent TiO 2 by weight. In some embodiments, the self-cleaning layer comprises ZnO, SnO 2 , SrTiO 3 , WO 3 , Bi 2 O 3 , Fe 2 O 3 , TEFLON®, polytetrafluoroethylene or polychlorotrifluoroethylene. In some embodiments, the self-cleaning layer is formed from perotitanium solution or perox-modified anatase sol.
- the self-cleaning layer comprises a plurality of nano-particles.
- Such nano-particles can comprise, for example SiO 2 , TiO 2 , Al 2 O 3 , ZrO 2 or SnO 2 , silica, or any combination thereof.
- the self-cleaning layer comprises (100-X)CaF 2 —(X)TiO 2 , where X is the molar percentage of TiO 2 and X is between 1 percent and 50 percent.
- the self-cleaning layer comprises a composite of CaF 2 and TiO 2 .
- the self-cleaning layer comprises a photocatalytic oxide and a resin.
- the resin comprises a silicone resin or a fluororesin.
- suitable silicone resins include, but are not limited to ethyltrimethoxysilane, methyltriethoxysilane, methyltrichlorosilane, methyltribromosilane, methyltriisopropoxysilane, methyl-tri-t-butoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltrichlorosilane, ethyltribromosilane, ethyltriisopropoxysilane, ethyl-tri-t-butoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltrichlorosilane, n-propyltribromosilane, n-propyl
- fluororesin examples include, but are not limited to, polytetrafluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, polychlorotrifluoroethylene, tetrafluoroethylene/hexafluoropropylene copolymer, ethylene/tetrafluoroethylene copolymer, ethylene/chlorotrifluoroethylene copolymer, tetrafluoroethylene/perfluoroalkyl vinyl ether copolymer, perfluorocyclo polymer, vinyl ether/fluoroolefin copolymer, vinyl ester/fluoroolefin copolymer, tetrafluoroethylene/vinyl ether copolymer, chlorotrifluoroethylene/vinyl ether copolymer, urethane-crosslinked tetrafluoroethylene, epoxy-crosslinked tetrafluoroethylene, acryl-crosslinked tetrafluoroethylene, melamine-cross
- a photovoltaic cell system comprising a plurality of photovoltaic cell assemblies.
- Each assembly in the plurality of photovoltaic cell assemblies comprises a base, a solar cell panel attached to the base, and a self-cleaning albedo device attached to the base.
- the self-cleaning albedo device comprises a flexible substrate, a high albedo layer, and a self-cleaning layer.
- the high albedo layer is disposed on the flexible substrate and the self-cleaning layer is disposed on the high albedo layer.
- a photovoltaic cell system in accordance with this aspect of the invention comprises a retractable roller mounted on the base of an assembly in the plurality of photovoltaic assemblies for retracting the self-cleaning albedo device into a roll.
- the self-cleaning albedo device has an open configuration and a closed configuration. The self-cleaning albedo device is rolled up in the retractable roller when the self-cleaning albedo device is in the closed position. The self-cleaning albedo device is extended in a downward gradient away from the base when the self-cleaning albedo device is in the open position.
- the self-cleaning layer comprises a photocatalytic material, Ti-hydroxyapetite, anatase TiO 2 , rutile TiO 2 or brookitein TiO 2 . In some embodiments, the self-cleaning layer comprises between 1 percent TiO 2 and 90 percent TiO 2 by weight. In some embodiments, the self-cleaning layer comprises ZnO, SnO 2 , SrTiO 3 , WO 3 , Bi 2 O 3 , Fe 2 O 3 , Teflon, polytetrafluoroethylene or polychlorotrifluoroethylene. In some embodiments, the self-cleaning layer is formed from perotitanium solution or perox-modified anatase sol.
- the self-cleaning layer comprises a plurality of nano-particles.
- Such nano-particles can comprise, for example SiO 2 , TiO 2 , Al 2 O 3 , ZrO 2 or SnO 2 , silica, or any combination thereof.
- the self-cleaning layer comprises (100-X)CaF 2 —(X)TiO 2 , where X is the molar percentage of TiO 2 and X is between 1 percent and 50 percent.
- the self-cleaning layer comprises a composite of CaF 2 and TiO 2 .
- Still another aspect of the present invention provides an albedo protective composite for use with photovoltaic cells.
- the albedo composite comprises a high albedo layer and a self-cleaning layer.
- the high albedo layer has an albedo value of twenty percent or greater, twenty-five percent or greater, thirty percent or greater, thirty-five percent or greater, forty percent or greater, forty-five percent or greater, fifty percent or greater, or fifty-five percent or greater.
- the high albedo layer has an albedo of sixty percent or greater, sixty-five percent or greater, seventy percent or greater, seventy-five percent or greater, eighty percent or greater, eighty -five percent or greater, ninety percent or greater or ninety-five percent or greater.
- the self-cleaning layer can be made of any of the materials described in relation to self-cleaning layers of other aspects of the invention described above.
- FIG. 1 depicts a photovoltaic cell in accordance with the prior art.
- FIG. 2A depicts a perspective view of a photovoltaic cell assembly in accordance with one embodiment of the present invention.
- FIG. 2B depicts a cross-sectional view of a photovoltaic cell assembly with portable self-cleaning albedo surfaces in accordance with one embodiment of the present invention.
- FIG. 3 illustrates a bifacial photovoltaic cell assembly in accordance with an embodiment of the present invention.
- FIG. 4 depicts a process for maintaining albedo surfaces and solar cells in accordance with one aspect of the present invention.
- FIG. 5 depicts various junction types in photovoltaic cell systems in accordance with embodiments of the present invention.
- FIG. 6A depicts a self-cleaning mechanism in a photocatalytic protective layer in accordance with an embodiment of the present invention.
- FIG. 6B depicts a hydrophilic mechanism in a photocatalytic self-cleaning protective layer in accordance with an embodiment of the present invention.
- FIG. 7 depicts a self-cleaning mechanism of a non-photocatalytic hydrophobic protective layer in accordance with an embodiment of the present invention.
- the present invention provides systems and materials to improve photovoltaic cell performance by implementing a self-cleaning function on photovoltaic cells and/or on albedo surfaces in the vicinity of photovoltaic cell assemblies.
- One aspect of the invention provides materials for protecting albedo surfaces that surround photovoltaic cell assemblies, thereby maximizing energy input into the photovoltaic cell assemblies.
- Another aspect of the invention provides materials for self-cleaning photovoltaic cell panels, thereby maintaining their efficiency.
- a third aspect of the present invention provides designs for portable albedo collecting devices that are associated with photovoltaic cell assemblies to optimize energy efficiency.
- an albedo collector system in accordance with the present invention comprises photovoltaic cell panels 210 and panel support systems 216 .
- photovoltaic cell panels 210 are bifacial.
- each photovoltaic panel 210 has a back surface 214 in addition to a front surface 212 .
- the present invention is not limited to bifacial photovoltaic cell panels.
- Photovoltaic cell panels 210 are generally mounted on a surface 202 , such as the Earth. Surface 202 is typically not reflective enough to produce a high albedo effect.
- high albedo layer 206 that is comprised of a high albedo layer 206 of material such as white paint, white sand, white gravel, white reflective plastic, or any combination thereof.
- high albedo layer 206 has an albedo of seventy percent or more, eight percent or more, ninety percent or more, ninety-five percent or more, or ninety eight percent or more.
- high albedo layer 206 is coated with a self-cleaning layer 208 thereby alleviating the need for cleaning high albedo layer 206 .
- self-cleaning layer 208 is a single layer.
- self-cleaning layer 208 is, in fact, a plurality of layers.
- each such layer can made of the same or a different compound.
- Compounds that can be used to make self-cleaning layer 208 are described below and include photo and non-photocatalytic materials, both hydrophobic and non-hydrophobic.
- the thickness of self-cleaning layer 208 is not greater than 0.2 ⁇ m. With such a thickness, coloring of self-cleaning layer 208 due to the interference of light can be avoided. Moreover, self-cleaning layer 208 is more transparent when the layer is made thinner. Thus, in some embodiments, self-cleaning layer 208 is not greater than 0.1 ⁇ m.
- an optional reflector wall 204 is used. Like ground 202 , optional reflector wall 204 is coated with high albedo layer 206 ′ such as white paint.
- this high albedo layer 206 ′ is coated with a self-cleaning layer 208 ′ so that high albedo layer 206 ′ does not have to be cleaned on a regular basis.
- the materials that can be used to form self-cleaning layer 208 ′ are the same as those that can be used to form self-cleaning layer 208 .
- any description of a possible composition of self-cleaning layer 208 is also a description of a possible composition for layer 208 ′.
- self-cleaning layer 208 and/or 208 ′ is one or more layers of a photocatalytic material, such as titanium dioxide or titanium-based nanoparticles, and/or a hydrophobic coating, such as a silicone and/or acrylic resin.
- a photocatalytic material such as titanium dioxide or titanium-based nanoparticles
- a hydrophobic coating such as a silicone and/or acrylic resin.
- FIG. 3 demonstrates this architecture.
- FIG. 3 illustrates a bi-facial photovoltaic cell 300 .
- Substrate 102 , back-electrode 104 , absorber 106 , window layer 108 , top-electrode 110 , and optional bus bar network 114 are as described above in conjunction with FIG. 1 .
- the assembly is encapsulated with a material 302 , such as EVA, and encased by panels 304 .
- Panels 304 are typically made of glass or a plastic such as TEDLAR®.
- photovoltaic cell panel 300 is coated with a self-cleaning layer 306 .
- self-cleaning layer 306 is one or more layers of a photocatalytic material, such as titanium dioxide or titanium-based nanoparticles, and/or a non-photocatalytic hydrophobic coating, such as a blend of a silicone and/or acrylic resin.
- the thickness of self-cleaning layer 306 is not greater than 0.2 ⁇ m. With such a thickness, coloring of self-cleaning layer 306 due to the interference of light can be avoided.
- self-cleaning layer 306 is more transparent when the layer is made thinner. Thus, in some embodiments, self-cleaning layer 306 is not greater than 0.1 ⁇ m.
- the junctions in solar cells in FIG. 3 are illustrated as a planar, the invention is not so limited. Within panels 304 and encapsulation layer 302 , the solar cell junctions can adopt any know solar cell configuration, include planar (as shown), wire based, or rod based. As such, in some embodiments, panels 304 encase a series of parallel wires, where each wire comprises an elongated back electrode core 104 , absorber 106 , window layer 108 , and top electrode 110 layers all circumferentially disposed on the elongated back electrode core 104 .
- each elongated solar cell in the plurality of elongated solar cells comprises (i) a conductive core configured as a first electrode, (ii) a semiconductor junction circumferentially disposed on the conductive core, and (iii) a transparent conductive oxide layer disposed on the semiconductor junction.
- Elongated solar cells in the plurality of elongated solar cells are geometrically arranged in a parallel or a near parallel manner thereby forming a planar array having a first face and a second face.
- the plurality of elongated solar cells is arranged such that one or more elongated solar cells in the plurality of elongated solar cells do not contact adjacent elongated solar cells.
- the solar cell assembly further comprises a plurality of electrode strips. Each respective electrode strip in the plurality of electrode strips is lengthwise disposed on a first side of a corresponding elongated solar cell in the plurality of elongated solar cells. The first side of the solar cell is part of the first face of the planar array.
- the solar cell assembly further comprises a transparent electrically insulating substrate (panel 304 ) that covers all or a portion of the first face of the planar array.
- a first and second elongated solar cell in the plurality of elongated solar cells are electrically connected in series by an electrical contact that connects the first electrode of the first elongated solar cell to the corresponding electrode strip of the second elongated solar cell.
- the plurality of elongated solar cells is configured to receive direct light from the first face and the second face of the planar array.
- the flowchart depicted in FIG. 4 illustrates two general approaches that improve the efficiency of photovoltaic cell assemblies.
- the first approach as depicted by steps 420 through 428 , aims to improve the amount of light energy delivered to photovoltaic systems.
- the first approach operates on self-cleaning layer 208 as depicted in FIG. 2A .
- This approach includes the addition of one or more albedo layers to enhance the albedo effect of surfaces in the vicinity of solar cell panels ( 424 ); protecting such albedo layers ( 426 ), and addition of a self-cleaning function to such layers ( 428 ).
- Practice of these steps causes additional solar energy to be absorbed by photovoltaic systems in the form of albedo energy.
- the second approach aims to maintain the general energy conversion efficiency of existing photovoltaic systems (solar cells).
- This second approach operates directly on solar cell panels such as those disclosed in FIG. 2A .
- This second approach involves maintaining the energy conversion efficiency of solar cell panels ( 410 ) and the addition of a self-cleaning to such solar cell panels ( 412 ).
- Novel systems and methods for example, as summarized by steps 430 , 432 , and 434 of FIG. 4 , operate on either albedo surfaces, as illustrated in FIG. 2 , and solar cells, as illustrated in FIG. 3 , to help improve efficiency.
- Aspects of steps 430 , 432 , and 434 include adding a photocatalytic coating 610 to solar cells or albedo surfaces and/or a hydrophobic coating (e.g., micro- or nano-structured) to the same.
- Both photocatalytic and non-photocatalytic materials can be used to realize self-cleaning albedo surfaces. Such materials can be either hydrophobic or hydrophilic.
- Some specific embodiments of the present invention provide a self-cleaning layer 208 comprising a photocatalytic material. As illustrated in FIG. 2 , self-cleaning layer 208 is applied over high albedo layer 206 .
- Some embodiments of the present invention provide a self-cleaning layer 208 that comprises a non-photocatalytic hydrophobic material.
- the photocatalytic or non-photocatalytic material is transparent, it can be used in layer 306 ( FIG. 3 ) of solar cell assemblies.
- Photocatalytic material is activated by solar radiation in a process termed photocatalysis. Such activation causes the surface to be hydrophilic.
- Titanium dioxide or titania e.g., TiO 2
- TiO 2 is a known photocatalysts. The preparation of TiO 2 is described, for example, in U.S. Pat. No. 6,699,317, which is hereby incorporated herein by reference in its entirety.
- TiO 2 exists in at least three natural mineral forms: anatase, rutile or brookitein TiO 2 . Among the three natural mineral forms, anatase is the most photoactive. Because of its unique properties, anatase is a highly favored photocatalytic material.
- TiO 2 can be used to form layer 306 ( FIG. 3 ) and/or self-cleaning layer 208 ( FIG. 2A and FIG. 2B ). In some embodiments of the present invention, TiO 2 , in the form of anatase, is present in layers 208 and 306 .
- Photocatalytic coatings comprise materials that are light radiation sensitive.
- One such photocatalytic coating is TiO 2 .
- the mechanism for a light-activated self-cleaning layer 208 and/or 306 made of a material such as TiO 2 is illustrated in FIG. 6A .
- the mechanism illustrated in FIG. 6A depicts TiO 2 will be appreciated, although it is not so limited. In fact, the mechanism explains a broad range of photocatalytic materials of which TiO 2 is just one example.
- the photocatalytic material, TiO 2 for example is chemically activated by solar light or ultraviolet (UV) radiation. Electrons in TiO 2 are excited by UV radiation.
- the resulting roaming electrons (e) leave behind holes (h + ).
- Water, dirt, and other forms of debris deposit on the coated surface and either react with the electrons or donate their own electrons to fill the holes.
- This exchange in electrons generates highly reactive materials such as H 2 O 2 , OH ⁇ , and free oxygen radicals.
- the impurity or contaminant in the deposited layer is gradually decomposed.
- Photocatalytic material 610 such as TiO 2
- resin 620 for example, to form self-cleaning layer 208 .
- self-cleaning layer 208 When exposed to UV radiation, water molecules on the surface of self-cleaning layer 208 are chemisorbed by both photocatalyst 610 and resin 620 . As a result, the surface of self-cleaning layer 208 becomes increasingly hydrophilic. Water spreads over the surface in a thin film instead of forming droplets. The decomposed organic and inorganic debris then gets washed away when exposed to water (e.g., rain). Thus, photocatalytic materials render a surface self-cleaning by chemically breaking up dirt and causing it to wash away
- Some photocatalytic materials in accordance with the present invention are hydrophobic rather than hydrophilic.
- the self-cleaning surface has combined hydrophilic and hydrophobic properties.
- U.S. Pat. No. 6,337,129 to Watanabe et al. which is hereby incorporated herein by reference in its entirety, describes bi-characteristic coating compositions that can be used in layers 306 in accordance with the present invention.
- TiO 2 has a band gap of 3.2 eV, which allows the oxide to absorb light with wavelengths shorter than 385 nm. Solar radiation, however, contains only a very narrow wavelength range of such high energy rays.
- Systems and methods have been developed to render TiO 2 more photoactive to radiation with longer wavelengths and hence less energy.
- the photocatalytic property of TiO 2 can be altered by adding dopant, such as metallic ions like Ce. Ce retards the phase transition from reactive anatase to inert rutile so that the photocatalytic coating layer remains more sensitive to UV radiation for a longer time.
- the Ce-doped TiO 2 nano particles have better band gap and modified solar absorption.
- layers 306 and/or self-cleaning 208 comprise doped TiO 2 .
- layers 306 and/or self-cleaning layer 208 comprise anatase, TiO 2 , rutile TiO 2 , brookitein TiO 2 , anatase sol, peroxo-modified anatase (Kon Corporation, Kishima-gun, Saga-prefecture Japan), and peroxotitanium acid (Kon Corporation).
- layers 306 and/or self-cleaning layer 208 comprise ZnO, SnO 2 , SrTiO 3 , WO 3 , Bi 2 O 3 , Fe 2 O 3 , or any combination thereof.
- inorganic oxides are combined with photocatalysts 610 to form self-cleaning layer 208 .
- the inorganic oxides include, but are not limited to silica, alumina, water glass, silicate, aluminosilicate, zirconia, ceria, tin oxide, calcia, magnesia, amorphous titania and other metal oxides.
- such materials are hydrophilified by photocatalytic action of the photocatalytic oxide.
- the present invention provides no limits on the amount of photocatalytic materials present in layers 208 and 306 .
- the amount of the photocatalytic material in layer 208 and/or 306 can be between 1 percent and 90 percent by weight, between 20 percent and 70 percent by weight, or between 20 percent and 50 percent by weight.
- the balance of such layers 208 and 306 comprises optional resin 620 ( FIG. 6B ), optional inorganic oxides 630 ( FIG. 6B ) and any other filler materials, at all possible combinations of ratios.
- layer 208 and/or 306 be hydrophilic.
- Ti-hydroxyapatite obtained, for example, by using titanium to replace calcium in Ca-hydroxyapatite (CaHAP)
- Ca-hydroxyapatite Ca-hydroxyapatite
- TiHAP is different from a composite of TiO 2 and hydroxyapatite. It has a low refractive index and high UV adsorption power, but it does not provide the photo-induced hydrophilicity (Nonami et al., Mater. Res. Bull., 33, pp 125, 1998, which is hereby incorporated herein by reference in its entirety).
- Ti-hydroxyapatite TiHAP
- TiHAP is a suitable material for use in self-cleaning layer 208 and/or 306 in accordance with embodiments of the present invention.
- self-cleaning layer 208 and/or 306 has both hydrophilic and hydrophobic properties.
- self-cleaning layer 208 comprises a photocatalytic oxide 610 and resin 620 .
- Resin comprises a silicone resin or silica, and a water-repellent fluororesin.
- the silicone or silica and the water-repellent fluororesin are present in a microscopically dispersed and exposed state on the surface of self-cleaning layer 208 and/or 306 .
- self-cleaning layer 208 comprises a photocatalytic oxide (e.g., 610 of FIG. 6B ), supporting resin (e.g., 620 of FIG. 6B ), and optional inorganic oxide (e.g., 630 of FIG. 6B ) have been described.
- exemplary photocatalytic oxides, supporting resins, and optional inorganic oxides of the present invention include, but are not limited to, any chemically stable combination of compounds listed in Table 1 below.
- Photocatalytic materials e.g., 610 of FIG. 6B
- Photocatalytic oxides anatase TiO 2 rutile TiO 2 brookitein TiO 2 ZnO SnO 2 SrTiO 3 WO 3 Bi 2 O 3 Fe 2 O 3 peroxotitanium acid peroxo-modified anatase sol
- Resins e.g., 620 of FIG.
- silicone resin or silica methyltrimethoxysilane for imparting hydrophilic methyltriethoxysilane or hydrophobic properties
- a transparent coating is used for layer 306 and/or self-cleaning layer 208 .
- the photocatalytic coating materials are available as water-based solutions (e.g., Titernal W, Fushimi Co. Mizoguchi, Sanda City, Hyogo Japan) or ethanol-based solutions (e.g., Titernal E, Fushimi Co.). In some embodiments, such solutions are sprayed onto high albedo layer 206 and panel 304 in order to form self-cleaning layers 208 and/or 306 .
- self-cleaning layer 208 and/or layer 306 is formed using a reverse micelle dip coating method in which a transparent nano-crystalline TiO 2 thin film is deposited.
- a surfactant e.g., Triton X-100
- a co-surfactant e.g., hexanol
- a continuous phase e.g., cyclohexane
- titanium isopropoxide are mixed together.
- the solution is applied to the proper surface (e.g., surface 304 ), for example, by dip coating. After drying and calcination in air, a multifunctional thin film of nano-crystalline TiO 2 is formed.
- application of the micelle solution in order to form self-cleaning layer 208 and/or layer 306 comprises removing excess solution, padding the surface, and heating the surface (e.g., to over 90° C.). See, for example, Daoud et al., 2004, J. Am. Ceram. Soc. 87, p. 953-555, which is hereby incorporated herein by reference in its entirety.
- self-cleaning layer 208 and/or layer 306 is formed from a peroxotitanium acid solution.
- the solution comprises peroxotitanium acid anywhere from 0.3% by weight up to the maximum allowed by the solubility of peroxotitanium acid in solution.
- examples of such a solution include, but are not limited to, PTA-85 and PTA-170 (Green Millennium, Los Angeles, Calif.), which comprises peroxotitanium acid at 0.85% and 1.7% by weight, respectively.
- self-cleaning layer 208 and/or layer 306 is a self-cleaning photocatalytic coating material formed from peroxo-modified anatase sol.
- the solution comprises from peroxo-modified anatase sol anywhere from 0.3% by weight up to the maximum allowed by the solubility of peroxo-modified anatase sol in solution. Examples of such a solution include, but are not limited to, peroxo-modified anatase sol (Green Millennium, Los Angeles, Calif.) at 0.85% and 2.2% by weight, respectively.
- self-cleaning layer 208 and/or layer 306 is a self-cleaning photocatalytic coating material formed from a mixture of peroxo-modified anatase sol and peroxotitanium acid.
- the solution comprises peroxo-modified anatase sol and peroxotitanium acid anywhere from 0.3% by weight up to the maximum allowed by the solubility of these compounds in solution.
- the mixture of peroxo-modified anatase sol and peroxotitanium acid comprises two components at any ratio.
- TPX-85 and TPX-220 Green Millennium, Los Angeles, Calif.
- peroxo-modified anatase sol and peroxotitanium acid at 0.85% and 2.2% by weight, respectively.
- a hybrid system is used to apply self-cleaning layer 208 and/or layer 306 when such a layer is made from anatase TiO 2 .
- the hybrid system utilizes an inert sol-gel coating and a layer of anatase TiO 2 on top.
- a sol-gel layer 620 acts to adhere nano-sized TiO 2 particles 610 .
- Layer 620 also acts as a barrier to protect high albedo layer 206 from photocatalytic reactions.
- a suitable transparent coating of TiO 2 is applied by methods such as painting (e.g., spraying, roller painting, etc., followed by optional heat treatment) to form self-cleaning layer 208 and/or 306 .
- layer 306 and/or self-cleaning layer 208 comprises TiHAP, and is applied as a spray paint.
- layer 306 and 304 is purchased as an assembled composite comprising a glass pane (layer 304 ) that has already been coated with a photocatalytic layer 306 . Examples of such assembled composites include, but are not limited to, ACTIVTM glass from Pilkington Holdings Inc. (Toledo, Ohio).
- a coating of an amorphous form of titania is deposited and then calcined to thereby transform by phase transition the amorphous titania into crystalline titania (e.g., anatase, rutile or, brookitein).
- crystalline titania e.g., anatase, rutile or, brookitein.
- high albedo layer 206 is highly heat resistant (e.g., white gravel, white sand, white cement, etc.).
- Formation of amorphous titania can be carried out by one of the following methods.
- titanium alkoxide Upon drying, hydrolysis of titanium alkoxide will be completed to result in the formation of titanium hydroxide which then undergoes dehydration polymerization whereby a layer of amorphous titania is formed on the surface of the substrate (e.g., on layer 206 ).
- other organic compounds of titanium such as chelate of titanium or acetate of titanium may be employed.
- Amorphous Titania from Inorganic Titanium Compound.
- An acidic aqueous solution of an inorganic compound of titanium such as TiCl 4 or Ti(SO 4 ) 2 is applied to the surface of a substrate by spray coating, flow coating, spin coating, dip coating, or roll coating.
- the substrate is then dried at a temperature of 100-200° C. to subject the inorganic compound of titanium to hydrolysis and dehydration polymerization to form a layer of amorphous titania on the surface of the substrate.
- amorphous titania may be formed on the surface of the substrate by chemical vapor deposition of TiCl 4 .
- Amorphous titania can be deposited on the surface of the substrate (e.g., onto layer 206 ) by bombarding a target of metallic titanium with an electron beam in an oxidizing atmosphere.
- Calcination of amorphous titania can be carried out at a temperature at least higher than the crystallization temperature of anatase. Upon calcination at a temperature of 400-500° C. or more, amorphous titania can be transformed into the anatase form of titania. Upon calcination at a temperature of 600-700° C. or more, amorphous titania can be transformed into the rutile form of titania.
- layer 208 and/or 306 comprises a mixture of titania and silica.
- the ratio of silica to the sum of titania and silica can be 5-90%, preferably 10-70%, more preferably 10-50%.
- the formation of a layer 208 and/or 306 comprised of silica-blended titania can be carried out by any of the following methods.
- a suspension containing particles of the anatase form or rutile form of titania and particles of silica is applied to panel 304 and/or high albedo layer 206 , followed by sintering at a temperature less than the softening point of panel 304 and or high albedo layer 206 .
- a mixture of a precursor of amorphous silica e.g., tetraalkoxysilane such as tetraethoxysilane, tetraisopropoxysilane, tetra-n-propoxysilane, tetrabuthoxysilane, and tetramethoxysilane; silanol formed by hydrolysis of tetraalkoxysilane; or polysiloxane having a mean molecular weight of less than 3000) and a crystalline titania sol is applied to panel 304 and/or high albedo layer 206 and is subjected to hydrolysis where desired to form silanol, followed by heating at a temperature higher than about 100° C.
- amorphous silica e.g., tetraalkoxysilane such as tetraethoxysilane, tetraisopropoxysilane, tetra-n-propoxysilane, te
- silanol to subject the silanol to dehydration polymerization to thereby form a photocatalytic coating wherein titania particles are bound by amorphous silica.
- dehydration polymerization of silanol is carried out at a temperature higher than about 200° C., polymerization of silanol is accomplished to a high degree so that the alkali resistance of the photocatalytic coating is enhanced.
- a suspension comprised of particles of silica dispersed in a solution of a precursor of amorphous titania e.g., an organic compound of titanium such as alkoxide, chelate or acetate of titanium; or an inorganic compound of titanium such as TiCl 4 and Ti(SO 4 ) 2
- a precursor of amorphous titania e.g., an organic compound of titanium such as alkoxide, chelate or acetate of titanium; or an inorganic compound of titanium such as TiCl 4 and Ti(SO 4 ) 2
- the precursor is subjected to hydrolysis and dehydration polymerization at a temperature ranging from the ambient temperature to 200° C. to thereby form a thin film of amorphous titania such that particles of silica are dispersed.
- the thin film is heated at a temperature higher than the crystallization temperature of titania but lower than the softening point of the substrate to thereby transform amorphous titania into crystalline titania by
- a precursor of amorphous titania e.g., an organic compound of titanium such as an alkoxide, chelate or acetate of titanium; or an inorganic compound of titanium such as TiCl 4 or Ti(SO 4 ) 2
- a precursor of amorphous silica e.g., a tetraalkoxysilane such as tetraethoxysilane, tetraisopropoxysilane, tetra-n-propoxy-silane, tetrabuthoxysilane, or tetramethoxysilane; a hydrolyzate thereof, e.g., silanol; or a polysiloxane having a mean molecular weight of less than 3000) and the mixture is applied to panel 304 and/or high albedo layer 206 .
- a tetraalkoxysilane such as tetraethoxysilane, tetraisopropoxys
- these precursors are subjected to hydrolysis and dehydration polymerization to form a thin film made of a mixture of amorphous titania and amorphous silica. Thereafter, the thin film is heated at a temperature higher than the crystallization temperature of titania but lower than the softening point of panel 304 and/or high albedo layer 206 to thereby transform amorphous titania into crystalline titania by phase transition.
- layer 208 and/or layer 306 comprises a mixture of titania and tin oxide.
- the ratio of tin oxide to the sum of titania and tin oxide can be 1-95% by weight, preferably 1-50% by weight.
- Formation of a layer 208 and/or layer 306 comprised of tin oxide-blended titania can be carried out by any of the following methods.
- a suspension containing particles of the anatase form or rutile form of titania and particles of tin oxide is applied to panel 304 and/or high albedo layer 206 , followed by sintering at a temperature less than the softening point of panel 304 and/or high albedo layer 206 .
- a suspension comprised of particles of tin oxide dispersed in a solution of a precursor of amorphous titania e.g., an organic compound of titanium such as alkoxide, chelate or acetate of titanium; or an inorganic compound of titanium such as TiCl 4 or Ti(So 4 ) 2
- a precursor of amorphous titania e.g., an organic compound of titanium such as alkoxide, chelate or acetate of titanium; or an inorganic compound of titanium such as TiCl 4 or Ti(So 4 ) 2
- the precursor is subjected to hydrolysis and dehydration polymerization at a temperature ranging from the ambient temperature to 200° C. to thereby form a thin film of amorphous titania such that particles of tin oxide are dispersed within the film.
- the thin film is heated at a temperature higher than the crystallization temperature of titania but lower than the softening point of panel 304 and/or high albedo layer 206 to thereby transform amorphous titania into crystalline titania by phase transition.
- layer 208 and/or layer 306 is a coating composition wherein particles of a photocatalyst are dispersed in a film forming element of uncured or partially cured silicone (organopolysiloxane) or a precursor thereof.
- the coating composition is applied on panel 304 and/or high albedo layer 206 and the film-forming element is then subjected to curing.
- the organic groups bonded to the silicon atoms of the silicone molecules are substituted with hydroxyl groups under the photocatalytic action of the photocatalyst.
- the photocatalyst-containing silicone paint can be cured at ambient temperature or at a relatively low temperature, this method can be applied to a substrate formed of a non-heat-resistant material such as plastics.
- the coating composition containing the photocatalyst can be applied whenever desired by way of brush painting, spray coating, roll coating and the like on any existing substrate requiring superhydrophilification of the surface.
- layer 208 and/or 306 is doped with a metal such as Ag, Cu and Zn.
- a metal such as Ag, Cu or Zn
- Doping of the layer with a metal such as Ag, Cu or Zn can be carried out by adding a soluble salt of such metal to a suspension containing particles of the photocatalyst, the resultant solution being used to form layer 208 and/or 306 .
- a soluble salt of such metal can be applied thereon and can be subjected to irradiation of light to deposit the metal by photoreduction.
- layer 208 and/or 306 doped with a metal such as Ag, Cu or Zn is capable of killing bacteria adhered to the surface. Moreover, it is believed that doped layers 208 and/or 306 inhibit growth of microorganisms such as mold, algae and moss. As a result, albedo surface 206 and/or panel 304 are clean for a longer period.
- layer 208 and/or 306 can additionally be doped with a metal of the platinum group such as Pt, Pd, Rh, Ru or Ir. These metals can be similarly doped into the composition used to make layer 208 and/or 306 by photoreduction deposition or by addition of a soluble salt.
- a layer 208 and/or 306 doped with a metal of the platinum group develops an enhanced photocatalytic redox activity so that decomposition of contaminants adhering on the surface is promoted.
- layer 208 and 206 is a single combined layer comprising white paint that is doped with any of the photoactive materials described in this section. Properties of suitable white paints are described in the section below.
- combined layer 208 / 206 is one or more layers of white paint that has been doped with TiO 2 , anatase TiO 2 , rutile TiO 2 , brookitein TiO 2 , ZnO, SnO 2 , SrTiO 3 , WO 3 , Bi 2 O 3 , or Fe 2 O 3 , or any combination of such dopants. In some embodiments, care is taken to ensure that such dopants are in the uppermost part of combined layer 208 / 206 by adding the dopant particles (e.g., TiO 2 ) while the paint is still wet.
- dopant particles e.g., TiO 2
- layer 208 and/or 306 is administered using a hot aerosol layering operation.
- a hot aerosol layering operation Such processes have been developed by companies such as Nextrom (Duluth, Georgia and Camarillo, Calif.).
- the hot aerosol process is based on the combustion of liquid raw materials in an atmospheric flame. As the precursor liquid is atomized, the droplets containing the raw materials and solvent evaporate, and finally condense again to become homogeneous, nano-sized particles, that are deposited on layer 206 and/or 304 .
- self-cleaning layers 208 and 306 are self-cleaned through mechanisms other than a primary photocatalytic mechanism.
- self-cleaning layers 208 and/or 306 have a self-cleaning property through some mechanism independent of a photocatalytic property. This does not necessarily mean that such layers do not include photocatalytic materials and that some self-cleaning functionality is present in such materials.
- some of the compositions of matter described in this section are photocatalytic. However, in each instance, the compositions in this section provide a self-cleaning functionality by way of a mechanism that is additional to or lieu of a photocatalytic mechanism.
- self-cleaning layer 208 and/or layer 306 is a hydrophobic material.
- a drop of water touches a solid surface both the solid surface and the drop are surrounded by air at the same time ( FIG. 7A ).
- the interactions at this “three-phase boundary” determine the shape of the drop and how well or poorly the liquid spreads over the solid surface, in other words, how well it wets the solid substrate.
- One way of measuring this is the contact angle ⁇ ( FIG. 7A ).
- Teflon When a drop of water contacts a cleaned glass surface, the contact angle ⁇ is around 15 degrees whereas by comparison, the same drop of water is on a Teflon coated surface forms a contact angle of 109° .
- Teflon absorbs light in the upper visible and UV ranges (Seres et al., 1994, Opt. Eng. 33, p. 3031-3033, which is hereby incorporated herein by reference in its entirety) and in the infrared region between 6 ⁇ m to 8 ⁇ m (Hollahan et al., 1974, Applied Opt. 13, p. 1844-1849, which is hereby incorporated herein by reference in its entirety).
- TEFLON® coating for use as self-cleaning layers 208 and/or 306 may be limited.
- An alternative to TEFLON® is a water repellant coating constructed from a composite material of CaF 2 and TiO 2 , as described by Tsai et al., in U.S. Pat. No. 6,383,629, which is hereby incorporated herein by reference in its entirety. Though the composite material of CaF 2 and TiO 2 does not have a contact angle ⁇ that is significantly better than that of Teflon, it does not have the optical limitations of Teflon material.
- self-cleaning layer 208 and/or layer 306 is made of polytetrafluoroethylene (PTFE) [—CF 2 —CF 2 —] n or polychlorotrifluoroethylene (PCTFE) [—CF 2 —CFCl —] n .
- PTFE polytetrafluoroethylene
- PCTFE polychlorotrifluoroethylene
- self-cleaning layer 208 comprises a TEFLON® coating. See, for example, U.S. Pat. No. 4,869,922 to D'Agositno, U.S. Pat. No. 4,410,563 to Richter and Dibble, as well as Hollahan et al., Applied Opt. 13, p. 1844-1849, 1974, each of which is hereby incorporated herein by reference in its entirety.
- self-cleaning layer 208 comprises CaF 2 and TiO 2 .
- self-cleaning layer 208 comprises a material having a chemical formula (100-X)CaF 2 —(X)TiO 2 , where X is the molar percentage of TiO 2 .
- X is between 1 percent and 50 percent.
- X is between 2 percent and 45 percent.
- X is between 10 percent and 30 percent.
- the Lotus-Effect is used to provide desired self-cleaning properties like that found in plant leaves such as the Sacred Water Lilly ( Nelumbo nucifera ).
- the Lotus-Effect is based on the interaction between a solid surface (lotus leaf) and its environment (water droplets), and is therefore a surface phenomenon. Electron microscopy study of the lotus leaves revealed that they have “rough” surfaces of small humps and some fronds (e.g., 710 in FIG. 7C ). In addition, the surfaces of the lotus leaves are coated by hydrophobic wax-like material (e.g. 720 in FIG. 7C ).
- self-cleaning layer 208 and/or layer 306 is a rough surface comprising hydrophobic nano- or micro-structured surfaces as illustrated in FIG. 7B .
- such structured surfaces cause water to have a contact angle ⁇ that exceeds 160 degree.
- the size of the surface structures e.g., 710 in FIG. 7C ) ranges from several nanometers up to 50 microns.
- hydrophobic coatings e.g., 720 in FIG. 7C
- such “rough” surfaces are effectively hydrophobic.
- Spherical water droplets roll off such surfaces (e.g., self-cleaning layer 208 or layer 306 in FIG. 7B and 7C).
- the materials used to make surface structures 710 and hydrophobic coatings 720 are transparent. Such materials can therefore be used to form layer 306 on solar cells in addition to forming a self-cleaning layer 208 on high albedo layer 206 .
- Particles 710 can be obtained in commercially available sizes and or by a precipitation processes such as, for example, by a pyrogenic process. Alternatively, particles 710 can be obtained be obtained from a gaseous starting material that is converted into a pulverulent substance.
- Particles 710 can be any combination of the materials listed in Table 2 below.
- particles 710 comprise oxides such as SiO 2 , TiO 2 , Al 2 O 3 , ZrO 2 or SnO 2 . These oxides are typically pyrogenically prepared oxides.
- particles 710 are pyrogenic silica with an average primary particle size in the range between about 7 nm and 40 nm.
- particles 710 comprise a silicate, a doped silicate, a mineral, a metal oxide, a silica, a polymer, and/or a coated metal powder.
- particles 710 comprise fumed silica, precipitated silica, or a pulverulent polymer, e.g., a cryogenically milled or spray-dried polytetrafluoroethylene (PTFE).
- PTFE polytetrafluoroethylene
- self-cleaning layer 208 is LOTUSANTM paint (Sto, Germany).
- the paint can be applied with brush, roller, or proper spray equipment.
- the LOTUSANTM paint comprises 1-5% triethoxy (2,4,4-trimethylpentyl) silane, 15-40% Cristobalite (SiO 2 ), and 10-30% TiO 2 , by weight.
- the self-cleaning layer is a hydrophilic paint that comprises an acrylic resin, an acryl-silicone resin, an aqueous silicone, a block copolymer of silicone resin and acrylic resin, an acryl-styrene resin, an ethylene oxide of sorbitan fatty acid, an ester of sorbitan fatty acid, an acetate of urethane, a cross-linked urethane of polycarbonatediol and/or polyisocyanate, or a cross-linked polymer of alkylester polyacrylate.
- self-cleaning layer 208 is a water-repellant paint containing polytetrafluoroethylene (PFTE).
- PFTE polytetrafluoroethylene
- TiO 2 and other photocatalytic oxides are found in various hydrophobic coating materials listed herein, it is not because of their possible photocatalytic properties. Rather, such oxides provide roughness and control the formation of micro- or nano- structured hydrophobic surfaces.
- Exemplary materials for use in layers 208 and 306 in which photoactivity is not the primary basis for self-cleaning Component Exemplary materials 1. Teflon Coating polytetrafluoroethylene (PTFE) 2. Composite inorganic coating polychlorotrifluoroethylene (PCTFE) 3. Coating based on Lotus Effect CaF 2 and TiO 2 3a. Structural forming material metal oxides inorganic substances mixed oxides silicates sulfates phosphates borates metal sulfides oxosulfides selenides sulfoselenides metal nitrides oxide nitrides Organic substances nanoscale organic polymeric particles nanoscale organic polymeric particles containing fluorine. 3b. Hydrophobic coating particles comprising PTFE or any other suitable hydrophobic materials
- high albedo layer 206 and self-cleaning layer 208 form a single self-cleaning high albedo layer.
- the self-cleaning property in such a layer can be rendered by either a photocatalytic or hydrophobic mechanism.
- One embodiment in accordance with this aspect of the invention is the application of white LotusanTM LOTUSANTM paint as a single combined layer 206 / 208 .
- device 220 is attached to the base of photovoltaic cell supporting system 216 .
- device 220 comprises a substrate 222 with a high albedo layer 206 disposed thereon.
- substrate 222 is made of a highly flexible material that can be rolled or folded up.
- a high albedo layer 206 for example, a layer of white paint or any of the materials described for layer 206 in preceding sections, is disposed on substrate 222 .
- flexible substrate 222 is itself a high albedo material.
- High albedo layer 206 is not necessary embodiments of device 220 where the substrate 222 has high albedo (e.g. albedo greater than ninety percent). As illustrated in FIG. 2B , self-cleaning layer 208 is disposed on high albedo layer 206 (or directly onto flexible substrate 222 in instances where flexible substrate 222 possesses albedo properties and thus high albedo layer 206 is not present).
- device 220 comprises a single layer of MYLAR® or any of a number of other low-cost plastics that can be manufactured with high albedo.
- flexible substrate 222 is optional and often is not included.
- self-cleaning layer 208 is not present as well.
- each solar cell assembly includes a respective device 220 as illustrated in FIG. 2B .
- device 220 is rolled down the gradient. Thus, any water that lands on device 220 rolls down the gradient rather than collecting on the surface and forming water spots.
- device 220 is a folded assembly instead of the roll-up type. Regardless of whether assembly 220 is of the roll-up type or the fold-up type, the assembly 220 will preferably attach to hooks on the bottom of each photovoltaic cell supporting system 216 in order to allow the device 220 to be removed to make room for maintenance.
- device 220 is a plastic sheet that can be easily rolled or folded away, stored and assembled with any existing photovoltaic cell system. See Section 5.5 for more description of photovoltaic cell systems that can be used in the present invention.
- device 220 is a self-cleaning albedo plastic sheet that can be rolled or folded out and attached to the base 216 of the photovoltaic cell support 216 by a hinge mechanism.
- substrate 222 is a board that can be easily stored and assembled in any existing photovoltaic cell systems.
- High albedo layer 206 for example a layer of white paint, is disposed upon substrate 222 .
- a self-cleaning layer 208 is then disposed upon high albedo layer 206 .
- Some embodiments of the present invention provide a photovoltaic cell system comprising a plurality of photovoltaic cell assemblies.
- Each assembly in the plurality of photovoltaic cell assemblies comprises a base, a solar cell panel attached to the base, and a self-cleaning albedo device (e.g., device 220 of FIG. 2B ), attached to the base.
- the self-cleaning albedo device comprises a flexible substrate (e.g., 222 of FIG. 2B ), a high albedo layer (e.g., layer 206 of FIG. 2B ), and a self-cleaning layer (e.g., layer 208 of FIG. 2B ).
- the photovoltaic system further comprises a retractable roller mounted on the base for retracting the self-cleaning albedo device into a roll.
- the self-cleaning albedo device has an open configuration and a closed configuration. The self-cleaning albedo device is rolled up in the retractable roller when the self-cleaning albedo device is in the closed position. Further, the self-cleaning albedo device is extended in a downward gradient away from the base when the self-cleaning albedo device is in the open position.
- semiconductor junction 510 is a heterojunction between an absorber layer 502 , disposed on conductive core 504 , and a junction partner layer 504 , disposed on absorber layer 502 .
- Layers 502 and 504 are composed of different semiconductors with different band gaps and electron affinities such that junction partner layer 504 has a larger band gap than absorber layer 502 .
- absorber layer 502 is p-doped and junction partner layer 504 is n-doped.
- TCO layer 512 is n + -doped.
- absorber layer 502 is n-doped and junction partner layer 504 is p-doped.
- TCO layer 512 is p + -doped.
- the semiconductors listed in Pandey, 1996, Handbook of Semiconductor Electrodeposition , Marcel Dekker Inc., Appendix 5, which is hereby incorporated herein by reference in its entirety, are used to form semiconductor junction 510 .
- absorber layer 502 is a group I-III-VI 2 compound such as copper indium di-selenide (CuInSe 2 ; also known as CIS).
- absorber layer 502 is a group I-III-VI 2 ternary compound selected from the group consisting of CdGeAs 2 , ZnSnAs 2 , CuInTe 2 , AgInTe 2 , CuInSe 2 , CuGaTe 2 , ZnGeAs 2 , CdSnP 2 , AgInSe 2 , AgGaTe 2 , CuInS 2 , CdSiAs 2 , ZnSnP 2 , CdGeP 2 , ZnSnAs 2 , CuGaSe 2 , AgGaSe 2 , AgInS 2 , ZnGeP 2 , ZnSiAs 2 , ZnSiP 2 , CdGeP 2 , ZnSnAs 2 , CuG
- junction partner layer 504 is CdS, ZnS, ZnSe, or CdZnS.
- absorber layer 502 is p-type CIS and junction partner layer 504 is n-type CdS, ZnS, ZnSe, or CdZnS.
- Such semiconductor junctions 510 are described in Chapter 6 of Bube, 1998, Photovoltaic Materials , Imperial College Press, London, which is hereby incorporated herein by reference in its entirety.
- absorber layer 502 is copper-indium-gallium-diselenide (CIGS). In some embodiments, absorber layer 502 is copper-indium-gallium-diselenide (CIGS) and junction partner layer 504 is CdS, ZnS, ZnSe, or CdZnS. In some embodiments, absorber layer 502 is p-type CIGS and junction partner layer 504 is n-type CdS, ZnS, ZnSe, or CdZnS.
- CIGS copper-indium-gallium-diselenide
- junction partner layer 504 is CdS, ZnS, ZnSe, or CdZnS.
- semiconductor junction 510 comprises amorphous silicon. In some embodiments, this is an n/n type heterojunction.
- layer 514 comprises SnO 2 (Sb)
- layer 512 comprises undoped amorphous silicon
- layer 510 comprises n+ doped amorphous silicon.
- semiconductor junction 510 is a p-i-n type junction.
- layer 514 is p + doped amorphous silicon
- layer 512 is undoped amorphous silicon
- layer 510 is n + amorphous silicon.
- Such semiconductor junctions 510 are described in Chapter 3 of Bube, Photovoltaic Materials, 1998, Imperial College Press, London, which is hereby incorporated herein by reference in its entirety.
- semiconductor junction 510 is based upon thin-film polycrystalline.
- layer 510 is a p-doped polycrystalline silicon
- layer 512 is depleted polycrystalline silicon
- layer 514 is n-doped polycrystalline silicon.
- semiconductor junctions are described in Green, 1995, Silicon Solar Cells: Advanced Principles & Practice , Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney; and Bube, 1998, Photovoltaic Materials , pp. 57-66, Imperial College Press, London, which is hereby incorporated herein by reference in its entirety.
- semiconductor junctions 510 based upon p-type microcrystalline Si:H and microcrystalline Si:C:H in an amorphous Si:H photovoltaic cell are used. Such semiconductor junctions are described in Bube, 1998, Photovoltaic Materials , pp. 66-67, Imperial College Press, London, and the references cited therein, which is hereby incorporated herein by reference in its entirety.
- semiconductor junctions 510 are based upon gallium arsenide (GaAs) or other III-V materials such as InP, AlSb, and CdTe.
- GaAs is a direct-band gap material having a band gap of 1.43 eV and can absorb 97% of AM1 radiation in a thickness of about two microns.
- Suitable type III-V junctions that can serve as semiconductor junctions 510 of the present invention are described in Chapter 4 of Bube, 1998, Photovoltaic Materials , Imperial College Press, London, which is hereby incorporated herein by reference in its entirety.
- semiconductor junction 510 is a hybrid multijunction photovoltaic cells such as a GaAs/Si mechanically stacked multijunction as described by Gee and Virshup, 1988, 20 th IEEE Photovoltaic Specialist Conference , IEEE Publishing, New York, p. 754, which is hereby incorporated herein by reference in its entirety, a GaAs/CuInSe 2 MSMJ four-terminal device, consisting of a GaAs thin film top cell and a ZnCdS/CuInSe 2 thin bottom cell described by Stanbery et al., 19 th IEEE Photovoltaic Specialist Conference , IEEE Publishing, New York, p.
- a hybrid multijunction photovoltaic cells such as a GaAs/Si mechanically stacked multijunction as described by Gee and Virshup, 1988, 20 th IEEE Photovoltaic Specialist Conference , IEEE Publishing, New York, p. 754, which is hereby incorporated herein by reference in its entirety, a GaAs/CuInSe 2
- semiconductor junctions 510 are based upon II-VI compounds that can be prepared in either the n-type or the p-type form. Accordingly, in some embodiments, referring to FIG. 5C , semiconductor junction 510 is a p-n heterojunction in which layers 520 and 540 are any combination set forth in the following table or alloys thereof
- semiconductor junctions 510 that are made from thin semiconductor films are preferred, the invention is not so limited. In some embodiments semiconductor junctions 510 is based upon crystalline silicon. For example, referring to FIG. 5D , in some embodiments, semiconductor junction 510 comprises a layer of p-type crystalline silicon 540 and a layer of n-type crystalline silicon 550 . Methods for manufacturing crystalline silicon semiconductor junctions 510 are described in Chapter 2 of Bube, Photovoltaic Materials, 1998, Imperial College Press, London, which is which is hereby incorporated herein by reference in its entirety.
- the self-cleaning surfaces of the present invention can be used with a wide variety of photovoltaic types including, but not limited to, wire-shaped, tube-shaped and flat panel-shaped.
- the self-cleaning surfaces of the present invention can be used with mono-facial, bi-facial, and multi-facial photovoltaic cells.
- the self-cleaning surfaces of the present invention can be used with moveable as well as stationary photovoltaic cells.
- the self-cleaning surfaces of the present invention can be used with photovoltaic cells having any of the junction types described in Section 5.4.
- the photovoltaic cells of the present invention can be used with photovoltaic cell concentrators.
- photovoltaic cells 210 there is no limit to the types and architectures of photovoltaic cells 210 ( FIG. 2 ) that can benefit from the self-cleaning layers 208 and 306 of the present invention.
- Representative photovoltaic cells 210 include, but are not limited to any of the photovoltaic cells described in U.S. Pat. Nos.
- Still another type of photovoltaic cell that can benefit from the self-cleaning layers of the present invention are the type of photovoltaic cells found in U.S. Pat. No. 6,762,359 B2 to Asia et al., which is hereby incorporated herein by reference in its entirety, in which a photovoltaic cell including a p-type layer and an n-type layer is disclosed.
- Still another type of photovoltaic cell that can benefit from the self-cleaning layers of the present invention is the type of photovoltaic cells found in U.S. Pat. No.
- Still another type of photovoltaic cell that can benefit from the self-cleaning layers of the present invention are the type of photovoltaic cells found in Japanese Patent Application Kokai Publication Number S59-125670, Toppan Printing Company, published Jul. 20, 1984 (hereinafter “S59-125670”), which is hereby incorporated herein by reference in its entirety, in which a rod-shaped photovoltaic cell is disclosed.
- Photovoltaic cell that can benefit from the self-cleaning layers of the present invention is the type of photovoltaic cells found in German Unexamined Patent Application DE 43 39 547 Al to Twin Solar-Technik Anlagens-GmbH, published May 24, 1995, (hereinafter “Twin Solar”), which is hereby incorporated herein by reference in its entirety, in which a plurality of rod-shaped photovoltaic cells arranged in a parallel manner inside a transparent sheet, which forms the body of the photovoltaic cell.
- One aspect of the invention provides a photovoltaic cell system comprising a plurality of photovoltaic cell assemblies.
- Each assembly in the plurality of photovoltaic cell assemblies comprises a front side and a back side. Each of these front sides and back sides is configured to receive electromagnetic energy.
- Each of the photovoltaic assemblies in the plurality of photovoltaic assemblies is configured to convert electromagnetic energy into an electrical current.
- Each respective photovoltaic cell assembly in the plurality of photovoltaic cell assemblies further comprises a first self-cleaning layer disposed on the corresponding front side of the respective photovoltaic cell assembly.
- each respective photovoltaic cell assembly in the plurality of photovoltaic cell assemblies further comprises a second self-cleaning layer disposed on the corresponding back side of the respective photovoltaic cell assembly.
- the first self-cleaning layer and/or the second self-cleaning layer is one or more layers of photocatalytic coating, nano-particles and/or titanium oxide.
- the first self-cleaning layer and/or the second self-cleaning layer is a hydrophobic layer.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Paints Or Removers (AREA)
Abstract
Description
- The Application claims priority to U.S. provisional patent Application No. 60/700,982, filed Jul. 19, 2005, which is hereby incorporated herein by reference in its entirety. This Application is a continuation of U.S. patent application Ser. No. 11/315,523, filed Dec. 21, 2005.
- This invention generally relates to photovoltaic cell assemblies for converting photovoltaic energy into electrical energy and more particularly to improved photovoltaic cell energy conversion by maintaining the high albedo of the surrounding environment of photovoltaic cells.
- Interest in photovoltaic cells, also known as solar cells, has grown rapidly in the past few decades. Photovoltaic cells comprise semiconductor junctions such as p-n junctions. It is known that light with photon energy greater than the band gap of an absorbing semiconductor layer in a semiconductor junction is absorbed by the layer. Such absorption causes optical excitation and the release of free electrons and free holes in the semiconductor. Because of the potential difference that exists at a semiconductor junction (e.g., a p-n junction), these released holes and electrons move across the junction in opposite directions and thereby give rise to flow of an electric current that is capable of delivering power to an external circuit. The flow of carriers into the external circuit constitutes an electrical current density, J amp cm −2, which, under short-circuit conditions, is known as the short-circuit current density, Jsc. At the same time, the separation of the charges (holes and electrons) sets up a potential difference between the two ends of the material, φ, which under open circuit conditions is known as the open-circuit voltage, φOC. It is desirable to maximize both Jsc and φOC. For interaction with the solar spectrum, Jsc and φOC are optimized when the junction semiconductor absorber has a band gap of about 1.4 electron volts (eV).
- It is presently common practice to provide an array of photovoltaic cells to generate electrical energy from solar radiation. Many photovoltaic cells are made of silicon. However, cells made of other materials, e.g., cadmium sulfide and gallium arsenide, have also been developed and tested. Crystalline silicon has traditionally been a favored material since it has a band gap of approximately 1.1 eV and thus favorably responds to the electromagnetic energy of the solar spectrum. However, because of the expense in making crystalline silicon-based cells, thin film photovoltaic cells made of materials other than silicon have been explored and used.
- Presently, many photovoltaic cells are fabricated as separate physical entities with light gathering surface areas on the order of 4-6 cm2 or larger. For this reason, it is standard practice for power generating applications to mount the cells in a flat array on a supporting substrate or panel so that their light gathering surfaces provide an approximation of a single large light gathering surface. Also, since each cell itself generates only a small amount of power, the required voltage and/or current is realized by interconnecting the cells of the array in a series and/or parallel matrix.
- The structure of a conventional prior art photovoltaic cell panel is shown in
FIG. 1 . Because of the large range in the thickness of the different layers, they are depicted schematically. Moreover,FIG. 1 is highly schematized so that it will represent the features of both “thick-film” photovoltaic cells and “thin-film” photovoltaic cells. In general, photovoltaic cells that use an indirect band gap material to absorb light are typically configured as “thick-film” photovoltaic cells because a thick film of the absorber layer is required to absorb a sufficient amount of light. Photovoltaic cells that use direct band gap materials to absorb light are typically configured as “thin-film” photovoltaic cells because only a thin layer of the direct band-gap material is need to absorb a sufficient amount of light. - The arrows at the top of
FIG. 1 show the direction of the solar illumination on the cell. Layer (element) 102 is the substrate. Glass or metal is a common substrate. In thin-film photovoltaic cells,substrate 102 can be-a polymer-based backing, metal, or glass. In some instances, there is an encapsulation layer, not shown,coating substrate 102.Layer 104 is the back electrical contact for the photovoltaic cell. It makes ohmic contact with the absorber layer ofsemiconductor junction 106. -
Layer 106 is the semiconductor absorber layer. In many but not all cases, it is a p-type semiconductor.Absorber layer 106 is thick enough to absorb light.Layer 108 is the semiconductor junction partner-that completes the formation of a p-n junction, which is a common type of junction found in photovoltaic cells. In a photovoltaic cell based on a p-n junction, when absorber 106 is a p-type doped material,junction partner 108 is an n-type doped material. Conversely, whenlayer 106 is an n-type doped material,layer 108 is a p-type doped material. Generally,junction partner 108 is much thinner than absorber 106. For example, in someinstances junction partner 108 has a thickness of about 0.05 microns.Junction partner 108 is highly transparent to solar radiation.Junction partner 108 is also known as the window layer, since it lets the light pass down to absorberlayer 106. - In a typical thick-film photovoltaic cell,
layers layer 106, the use of CdS to formlayer 108 has resulted in high efficiency cells. Other materials that can be used forlayer 108 include, but are not limited to, SnO2, ZnO, ZrO2 and doped ZnO. -
Layer 110 is the top transparent electrode, which completes the functioning cell.Layer 110 is used to draw current away from the junction sincejunction partner 108 is generally too resistive to serve this function. As such,layer 110 should be highly conductive and transparent to light.Layer 110 can in fact be a comb-like structure of metal printed ontolayer 108 rather than forming a discrete layer.Layer 110 is typically a transparent conductive oxide (TCO) such as zinc oxide (ZnO), indium-tin-oxide (ITO), or tin oxide (SnO2). However, even when a TCO layer is present, abus bar network 114 is typically needed to draw off current since the TCO has too much resistance to efficiently perform this function in larger photovoltaic cells.Network 114 shortens the distance charger carriers must move in the TCO layer in order to reach the metal contact, thereby reducing resistive losses. The metal bus bars, also termed grid lines, can be made of any reasonably conductive metal such as, for example, silver, steel or aluminum. There is design a tradeoff innetwork 114 between thicker grid lines that are more electrically conductive but block more light, and thin grid lines that are less electrically conductive but block less light. The metal bars are preferably configured in a comb-like arrangement to permit light rays throughTCO layer 110. Busbar network layer 114 andTCO layer 110, combined, act as a single metallurgical unit, functionally interfacing with a first ohmic contact to form a current collection circuit. In U.S. Pat. No. 6,548,751 to Sverdrup et al., which is hereby incorporated herein by reference in its entirety, a combined silver (Ag) bus bar network and indium-tin-oxide layer function as a single, transparent ITO/Ag layer. -
Layer 112 is an antireflection (AR) coating, which can allow a significant amount of extra light into the cell. Depending on the intended use of the cell, it might be deposited directly on the top conductor (as illustrated), or on a separate cover glass, or both. Ideally, the AR coating reduces the reflection of the cell to very near zero over the spectral region that photoelectric absorption occurs, and at the same time increases the reflection in the other spectral regions to reduce heating. U.S. Pat. No. 6,107,564 to Aguilera et al., which is hereby incorporated herein by reference in its entirety, describes representative antireflective coatings that are known in the art. - Photovoltaic cells typically produce only a small voltage. For example, silicon based photovoltaic cells produce a voltage of about 0.6 volts (V). Thus, photovoltaic cells are interconnected in series or parallel in order to get a reasonable voltage. When connected in series, voltages of individual cells add together while current remains the same. Thus, photovoltaic cells arranged in series reduce the amount of current flow through such cells, compared to analogous photovoltaic cells arrange in parallel, thereby improving efficiency. As illustrated in
FIG. 1 , the arrangement of photovoltaic cells in series is accomplished usinginterconnects 116. In general, aninterconnect 116 places the first electrode of one photovoltaic cell in electrical communication with the counterelectrode of an adjoining photovoltaic cell. - As noted above and as illustrated in
FIG. 1 , conventional photovoltaic cells are typically in the form of a plate structure. Although such cells are highly efficient when they are smaller, larger planar photovoltaic cells have reduced efficiency because it is harder to make the semiconductor films that form the junction in such photovoltaic cells uniform. Furthermore, the occurrence of pinholes and similar flaws increase in larger planar photovoltaic cells. These features can cause shunts across the junction. Detailed descriptions of various types of photovoltaic cells within the scope of the present invention, as defined by junction type, are in Section 5.4, below. - Regardless of their difference in set-up and physical shape, photovoltaic cells function by converting solar radiation into electrical energy. Those skilled in the art will appreciate that the efficiency of a specific type of photovoltaic cell is proportional to the amount of photovoltaic radiation that is absorbed by the cell. Such absorption is influenced by numerous conditions including but not limited to cloud cover, location, geographic latitude, and time of the day. For example, an extremely cloudy day reduces the amount of photovoltaic radiation available for absorption by a photovoltaic cell system. In an effort to absorb more of the available photovoltaic radiation, workers have developed photovoltaic cell architectures such as the bi-facial photovoltaic array that has both a front and a back panel. U.S. Pat. No. 5,990,413 to Ortabasi et al. describes such photovoltaic cell panels. The goal of the bi-facial design is to take advantage of both direct solar radiation and albedo.
- Albedo is the fraction of incident electromagnetic radiation reflected by a surface. Albedo measures the reflectivity of a surface or body. It is the ratio of electromagnetic radiation reflected to the amount incident upon it. This ratio is a percentage that ranges anywhere from zero percent to one hundred percent. The amount of albedo a material exhibits is a function of its physical properties. Albedo is a product of the reflection of the incident solar radiation by the surroundings of the photovoltaic cells, such as sand, snow, water, rocks, grass, and buildings. Albedo is strongly dependent upon the nature of the environment. For example, albedo due to fresh snow can be higher than seventy percent while albedo due to large bodies of water is less than ten percent. In some instances, enhanced albedo improves the efficiency of existing photovoltaic cell assemblies.
- Using albedo to improve photovoltaic cell efficiency has been described. For example, U.S. Pat. No. 5,990,413 to Ortabasi et al. and U.S. Pat. No. 5,344,496 to Stern et al., each of which is hereby incorporated by reference in its entirety, describe bi-facial and concentrator photovoltaic cell array designs, respectively, that make use of the albedo affect. High albedo materials, however, are often difficult to maintain. The albedo properties of a high albedo material change as the physical properties of the material change. Unfortunately, the albedo properties of material degrade over time. For example, numerous factors, such as bacteria growth, dirt built up, and/or watermarks on the surface of the material can all deleteriously affect the albedo property of such material. Such degradation in the albedo affect of materials adversely affects the efficiency of photovoltaic cell assemblies that make use of the albedo effect to improve efficiency since the efficiency of such systems is a function, in part, of the strength of such albedo effects.
- In the art, regular cleaning of albedo surfaces has been done in order to maintain the albedo properties of materials in the vicinity of solar cells. However, such regular cleaning of such materials, in order to maintain their albedo properties, is inconvenient, time consuming, and expensive. For example, many conventional photovoltaic cell assemblies have a large number of photovoltaic cell panels arranged into concentrated arrays to optimize their efficiency. Because of this compact arrangement, the albedo surfaces around such photovoltaic cells are difficult to access for cleaning purposes. Furthermore, use of detergents to facilitate cleaning can have adverse effects on albedo surfaces that are sensitive to such chemicals. Reduced albedo effect can result from such cleaning. Moreover, some albedo surface cleaning regimens require the removal of photovoltaic cell panels prior to cleaning Clearly, such efforts are costly and time consuming.
- Some approaches to maintaining albedo surfaces involve repainting such surfaces with, for example, a highly reflective white paint. However, such approaches are inconvenient for many of the same reasons described above in relation to cleaning regimens. Such reasons include the difficulty in gaining access to such regions and the manual labor involved in painting. Further, this approach is not advantageous because it typically requires a cleaning prep stage, because of the expense of the paint used, and because, over time, an excessive buildup comprising multiple layers of paint form on the albedo surface that need to be stripped away in order to maintain the integrity of such surfaces.
- Just as cleaning albedo surfaces is a necessary task in order to maintain the albedo properties of such surfaces, cleaning of photovoltaic cell panels themselves is necessary as well. However, such cleaning has the same drawbacks as the cleaning of albedo surfaces. Namely, such cleaning is time consuming, can degrade the material properties of the panels through adverse interaction (chemical, abrasive, or otherwise) with the cleaning agents, and is expensive. However, such cleaning may be necessary since any debris build up on photovoltaic cell panel surfaces adversely affects their efficiency.
- Given the above background what are needed in the art are improved systems or methods for preserving the high albedo properties of albedo surfaces used in photovoltaic cell configurations. Moreover, what are needed in the art are improved systems and methods for cleaning photovoltaic cell panel surfaces.
- To address the problems found in the prior art, the present invention provides systems and methods for maintaining the efficiency of photovoltaic cells. In particular, the present invention provides systems and methods for maintaining self-cleaning albedo surfaces and self-cleaning photovoltaic cell panels. Self-cleaning albedo surfaces and photovoltaic cell panels are produced by applying one or more layers of self-cleaning material onto the surface of photovoltaic cell panels as well as albedo surfaces. In this way, the drawbacks found in the prior art, namely laborious time consuming cleaning and repainting efforts, are minimized, thereby yielding a more efficient cost effective photovoltaic cell system.
- One aspect of the invention provides a photovoltaic cell system comprising a plurality of photovoltaic cell assemblies. Each assembly in the plurality of photovoltaic cell assemblies comprises a front side. Each of these front sides is configured to receive electromagnetic energy. Each of the photovoltaic assemblies in the plurality of photovoltaic assemblies is configured to convert electromagnetic energy into an electrical current. The photovoltaic cell system further comprises an albedo surface configured to reflect electromagnetic energy on one or more photovoltaic cell assemblies in the plurality of photovoltaic cell assemblies. The albedo surface comprises a high albedo layer and a self-cleaning layer disposed on the high albedo layer.
- In some embodiments, the self-cleaning layer comprises a photocatalytic material, Ti-hydroxyapetite, anatase TiO2, rutile TiO2 or brookitein TiO2. In some embodiments, the self-cleaning layer comprises between 1 percent TiO2 and 90 percent TiO2 by weight. In some embodiments, the self-cleaning layer comprises ZnO, SnO2, SrTiO3, WO3, Bi2O3, Fe2O3, TEFLON®, polytetrafluoroethylene or polychlorotrifluoroethylene. In some embodiments, the self-cleaning layer is formed from perotitanium solution or perox-modified anatase sol. In some embodiments, the self-cleaning layer comprises a plurality of nano-particles. Such nano-particles can comprise, for example SiO2, TiO2, Al2O3, ZrO2 or SnO2, silica, or any combination thereof. In some embodiments, the self-cleaning layer comprises (100-X)CaF2—(X)TiO2, where X is the molar percentage of TiO2 and X is between 1 percent and 50 percent. In some embodiments, the self-cleaning layer comprises a composite of CaF2 and TiO2.
- In some embodiments, the self-cleaning layer comprises a photocatalytic oxide and a resin. In some embodiments, the resin comprises a silicone resin or a fluororesin. Examples of suitable silicone resins include, but are not limited to ethyltrimethoxysilane, methyltriethoxysilane, methyltrichlorosilane, methyltribromosilane, methyltriisopropoxysilane, methyl-tri-t-butoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltrichlorosilane, ethyltribromosilane, ethyltriisopropoxysilane, ethyl-tri-t-butoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltrichlorosilane, n-propyltribromosilane, n-propyltriisopropoxysilane, n-propyl-tri-t-butoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, n-hexytrichlorosilane, n-hexyltribromosilane, n-hexyltriisopropoxysilane, n-hexyl-tri-t-butoxysilane, n-decyltrimethoxysilane, n-decyltriethoxysilane, n-decyltrichlorosilane, n-decyltribromosilane, n-decyltriisopropoxysilane, n-decyl-tri-t-butoxysilane, n-octatrimethoxysilane, n-octatriethoxysilane, n-octatrichlorosilane, n-octatribromosilane, n-octatriisopropoxysilane, n-octa-tri-t-butoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, phenyltrichlorosilane, phenyltribromosilane, phenyltriisopropoxysilane, phenyl-t-butoxysilane, dimethyldichlorosilane, dimethyldibromosilane, dimethyldimethoxysilane, dimethyldiethoxysilane, diphenyldichlorosilane, diphenyldibromosilane, diphenyldimethoxysilane, diphenyldiethoxysilane, phenylmethyldichlorosilane, phenylmethyldibromosilane, phenylmethyldimethoxysilane, phenylmethyldiethoxysilane, vinyltrichlorosilane, vinyltribromosilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltriisopropoxysilane, vinyl-tri-t-butoxysilane, trifluoropropyltrichlorosilane, trifluoropropyltribromosilane, trifluoropropyltrimethoxysilane, trifluoropropyltriethoxysilane, trifluoropropyltriisopropoxysilane, trifluoropropyl-tri-t-butoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltriisopropoxysilane, γ-glycidoxypropyl-tri-t-butoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropyltriethoxysilane, γ-methacryloxypropyltriisopropoxysilane, γ-methacryloxypropyl-tri-t-butoxysilane, γ-aminopropylmethyldimethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltriisopropoxysilane, γ-aminopropyl-tri-t-butoxysilane, γ-mercaptopropylmethyldimethoxysilane, γ-mercaptopropylmethyldiethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, γ-mercaptopropyltriisopropoxysilane, γ-mercaptopropyl-tri-t-butoxysilane, β-(3,4-poxycyclohexyl)ethyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltriethoxysilane, or any combination thereof. Examples of fluororesin include, but are not limited to, polytetrafluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, polychlorotrifluoroethylene, tetrafluoroethylene/hexafluoropropylene copolymer, ethylene/tetrafluoroethylene copolymer, ethylene/chlorotrifluoroethylene copolymer, tetrafluoroethylene/perfluoroalkyl vinyl ether copolymer, perfluorocyclo polymer, vinyl ether/fluoroolefin copolymer, vinyl ester/fluoroolefin copolymer, tetrafluoroethylene/vinyl ether copolymer, chlorotrifluoroethylene/vinyl ether copolymer, urethane-crosslinked tetrafluoroethylene, epoxy-crosslinked tetrafluoroethylene, acryl-crosslinked tetrafluoroethylene, melamine-crosslinked tetrafluoroethylene, or any combination thereof.
- Another aspect of the invention provides a photovoltaic cell system comprising a plurality of photovoltaic cell assemblies. Each assembly in the plurality of photovoltaic cell assemblies comprises a base, a solar cell panel attached to the base, and a self-cleaning albedo device attached to the base. The self-cleaning albedo device comprises a flexible substrate, a high albedo layer, and a self-cleaning layer. The high albedo layer is disposed on the flexible substrate and the self-cleaning layer is disposed on the high albedo layer. In some embodiments, a photovoltaic cell system in accordance with this aspect of the invention comprises a retractable roller mounted on the base of an assembly in the plurality of photovoltaic assemblies for retracting the self-cleaning albedo device into a roll. In some embodiments, the self-cleaning albedo device has an open configuration and a closed configuration. The self-cleaning albedo device is rolled up in the retractable roller when the self-cleaning albedo device is in the closed position. The self-cleaning albedo device is extended in a downward gradient away from the base when the self-cleaning albedo device is in the open position.
- In some embodiments, the self-cleaning layer comprises a photocatalytic material, Ti-hydroxyapetite, anatase TiO2, rutile TiO2 or brookitein TiO2. In some embodiments, the self-cleaning layer comprises between 1 percent TiO2 and 90 percent TiO2 by weight. In some embodiments, the self-cleaning layer comprises ZnO, SnO2, SrTiO3, WO3, Bi2O3, Fe2O3, Teflon, polytetrafluoroethylene or polychlorotrifluoroethylene. In some embodiments, the self-cleaning layer is formed from perotitanium solution or perox-modified anatase sol. In some embodiments, the self-cleaning layer comprises a plurality of nano-particles. Such nano-particles can comprise, for example SiO2, TiO2, Al2O3, ZrO2 or SnO2, silica, or any combination thereof. In some embodiments, the self-cleaning layer comprises (100-X)CaF2—(X)TiO2, where X is the molar percentage of TiO2 and X is between 1 percent and 50 percent. In some embodiments, the self-cleaning layer comprises a composite of CaF2 and TiO2.
- Still another aspect of the present invention provides an albedo protective composite for use with photovoltaic cells. The albedo composite comprises a high albedo layer and a self-cleaning layer. In some embodiments in accordance with the present invention, the high albedo layer has an albedo value of twenty percent or greater, twenty-five percent or greater, thirty percent or greater, thirty-five percent or greater, forty percent or greater, forty-five percent or greater, fifty percent or greater, or fifty-five percent or greater. In other embodiments in accordance with the present invention, the high albedo layer has an albedo of sixty percent or greater, sixty-five percent or greater, seventy percent or greater, seventy-five percent or greater, eighty percent or greater, eighty -five percent or greater, ninety percent or greater or ninety-five percent or greater. The self-cleaning layer can be made of any of the materials described in relation to self-cleaning layers of other aspects of the invention described above.
-
FIG. 1 depicts a photovoltaic cell in accordance with the prior art. -
FIG. 2A depicts a perspective view of a photovoltaic cell assembly in accordance with one embodiment of the present invention. -
FIG. 2B depicts a cross-sectional view of a photovoltaic cell assembly with portable self-cleaning albedo surfaces in accordance with one embodiment of the present invention. -
FIG. 3 illustrates a bifacial photovoltaic cell assembly in accordance with an embodiment of the present invention. -
FIG. 4 depicts a process for maintaining albedo surfaces and solar cells in accordance with one aspect of the present invention. -
FIG. 5 depicts various junction types in photovoltaic cell systems in accordance with embodiments of the present invention. -
FIG. 6A depicts a self-cleaning mechanism in a photocatalytic protective layer in accordance with an embodiment of the present invention. -
FIG. 6B depicts a hydrophilic mechanism in a photocatalytic self-cleaning protective layer in accordance with an embodiment of the present invention. -
FIG. 7 depicts a self-cleaning mechanism of a non-photocatalytic hydrophobic protective layer in accordance with an embodiment of the present invention. - Like referenced elements refer to corresponding parts throughout the several views of the drawings.
- The present invention provides systems and materials to improve photovoltaic cell performance by implementing a self-cleaning function on photovoltaic cells and/or on albedo surfaces in the vicinity of photovoltaic cell assemblies. One aspect of the invention provides materials for protecting albedo surfaces that surround photovoltaic cell assemblies, thereby maximizing energy input into the photovoltaic cell assemblies. Another aspect of the invention provides materials for self-cleaning photovoltaic cell panels, thereby maintaining their efficiency. A third aspect of the present invention provides designs for portable albedo collecting devices that are associated with photovoltaic cell assemblies to optimize energy efficiency.
- The present invention discloses systems and methods for improving existing photovoltaic cell assemblies that utilize albedo effects thereby improving their performance. As depicted in
FIG. 2A , an albedo collector system in accordance with the present invention comprisesphotovoltaic cell panels 210 andpanel support systems 216. In some embodiments,photovoltaic cell panels 210 are bifacial. In such optional embodiments, eachphotovoltaic panel 210 has aback surface 214 in addition to afront surface 212. However, the present invention is not limited to bifacial photovoltaic cell panels.Photovoltaic cell panels 210 are generally mounted on asurface 202, such as the Earth.Surface 202 is typically not reflective enough to produce a high albedo effect. Therefore, in order to reflect solarlight rays 218,surface 202 is covered with a high albedo layer that is comprised of ahigh albedo layer 206 of material such as white paint, white sand, white gravel, white reflective plastic, or any combination thereof. In some embodiments of the present inventionhigh albedo layer 206 has an albedo of seventy percent or more, eight percent or more, ninety percent or more, ninety-five percent or more, or ninety eight percent or more. The drawback withhigh albedo layer 206, as described in the background section above, is that it requires cleaning in order to maintain its high albedo properties. Advantageously, in the present invention,high albedo layer 206 is coated with a self-cleaninglayer 208 thereby alleviating the need for cleaninghigh albedo layer 206. In some embodiments, self-cleaninglayer 208 is a single layer. In some embodiments, self-cleaninglayer 208 is, in fact, a plurality of layers. In embodiments where self-cleaninglayer 208 is in fact a plurality of layers, each such layer can made of the same or a different compound. Compounds that can be used to make self-cleaninglayer 208 are described below and include photo and non-photocatalytic materials, both hydrophobic and non-hydrophobic. - In some embodiments, the thickness of self-cleaning
layer 208 is not greater than 0.2 μm. With such a thickness, coloring of self-cleaninglayer 208 due to the interference of light can be avoided. Moreover, self-cleaninglayer 208 is more transparent when the layer is made thinner. Thus, in some embodiments, self-cleaninglayer 208 is not greater than 0.1 μm. - In some embodiments, an
optional reflector wall 204 is used. Likeground 202,optional reflector wall 204 is coated withhigh albedo layer 206′ such as white paint. Advantageously, thishigh albedo layer 206′ is coated with a self-cleaninglayer 208′ so thathigh albedo layer 206′ does not have to be cleaned on a regular basis. The materials that can be used to form self-cleaninglayer 208′ are the same as those that can be used to form self-cleaninglayer 208. Thus, although not explicitly mentioned below, it will be appreciated that any description of a possible composition of self-cleaninglayer 208 is also a description of a possible composition forlayer 208′. - In some embodiments, self-cleaning
layer 208 and/or 208′ is one or more layers of a photocatalytic material, such as titanium dioxide or titanium-based nanoparticles, and/or a hydrophobic coating, such as a silicone and/or acrylic resin. - As described in the background section, dust or other debris collects on photovoltaic cell panels thereby degrading their efficiency. The present invention addresses this problem by providing a self-cleaning layer to such photovoltaic cell panels.
FIG. 3 demonstrates this architecture.FIG. 3 illustrates a bi-facialphotovoltaic cell 300.Substrate 102, back-electrode 104,absorber 106,window layer 108, top-electrode 110, and optionalbus bar network 114 are as described above in conjunction withFIG. 1 . The assembly is encapsulated with a material 302, such as EVA, and encased by panels 304. Panels 304 are typically made of glass or a plastic such as TEDLAR®. AlthoughFIG. 3 is drawn as a bifacial assembly, the invention is not so limited. Photovoltaic cells that include just one absorbing face benefit from the advantages of the present invention as well. Advantageously,photovoltaic cell panel 300 is coated with a self-cleaninglayer 306. In some embodiments, self-cleaninglayer 306 is one or more layers of a photocatalytic material, such as titanium dioxide or titanium-based nanoparticles, and/or a non-photocatalytic hydrophobic coating, such as a blend of a silicone and/or acrylic resin. In some embodiments, the thickness of self-cleaninglayer 306 is not greater than 0.2 μm. With such a thickness, coloring of self-cleaninglayer 306 due to the interference of light can be avoided. Moreover, self-cleaninglayer 306 is more transparent when the layer is made thinner. Thus, in some embodiments, self-cleaninglayer 306 is not greater than 0.1 μm. Although the junctions in solar cells inFIG. 3 are illustrated as a planar, the invention is not so limited. Within panels 304 and encapsulation layer 302, the solar cell junctions can adopt any know solar cell configuration, include planar (as shown), wire based, or rod based. As such, in some embodiments, panels 304 encase a series of parallel wires, where each wire comprises an elongatedback electrode core 104,absorber 106,window layer 108, andtop electrode 110 layers all circumferentially disposed on the elongatedback electrode core 104. In one specific example in accordance with this embodiment, each elongated solar cell in the plurality of elongated solar cells comprises (i) a conductive core configured as a first electrode, (ii) a semiconductor junction circumferentially disposed on the conductive core, and (iii) a transparent conductive oxide layer disposed on the semiconductor junction. Elongated solar cells in the plurality of elongated solar cells are geometrically arranged in a parallel or a near parallel manner thereby forming a planar array having a first face and a second face. The plurality of elongated solar cells is arranged such that one or more elongated solar cells in the plurality of elongated solar cells do not contact adjacent elongated solar cells. The solar cell assembly further comprises a plurality of electrode strips. Each respective electrode strip in the plurality of electrode strips is lengthwise disposed on a first side of a corresponding elongated solar cell in the plurality of elongated solar cells. The first side of the solar cell is part of the first face of the planar array. The solar cell assembly further comprises a transparent electrically insulating substrate (panel 304) that covers all or a portion of the first face of the planar array. A first and second elongated solar cell in the plurality of elongated solar cells are electrically connected in series by an electrical contact that connects the first electrode of the first elongated solar cell to the corresponding electrode strip of the second elongated solar cell. The plurality of elongated solar cells is configured to receive direct light from the first face and the second face of the planar array. - The flowchart depicted in
FIG. 4 illustrates two general approaches that improve the efficiency of photovoltaic cell assemblies. The first approach, as depicted bysteps 420 through 428, aims to improve the amount of light energy delivered to photovoltaic systems. As such, the first approach operates on self-cleaninglayer 208 as depicted inFIG. 2A . This approach includes the addition of one or more albedo layers to enhance the albedo effect of surfaces in the vicinity of solar cell panels (424); protecting such albedo layers (426), and addition of a self-cleaning function to such layers (428). Practice of these steps causes additional solar energy to be absorbed by photovoltaic systems in the form of albedo energy. The second approach, as depicted bysteps FIG. 2A . This second approach involves maintaining the energy conversion efficiency of solar cell panels (410) and the addition of a self-cleaning to such solar cell panels (412). Novel systems and methods, for example, as summarized bysteps FIG. 4 , operate on either albedo surfaces, as illustrated inFIG. 2 , and solar cells, as illustrated inFIG. 3 , to help improve efficiency. Aspects ofsteps photocatalytic coating 610 to solar cells or albedo surfaces and/or a hydrophobic coating (e.g., micro- or nano-structured) to the same. - Both photocatalytic and non-photocatalytic materials can be used to realize self-cleaning albedo surfaces. Such materials can be either hydrophobic or hydrophilic. Some specific embodiments of the present invention provide a self-cleaning
layer 208 comprising a photocatalytic material. As illustrated inFIG. 2 , self-cleaninglayer 208 is applied overhigh albedo layer 206. Some embodiments of the present invention provide a self-cleaninglayer 208 that comprises a non-photocatalytic hydrophobic material. Furthermore, in instances where the photocatalytic or non-photocatalytic material is transparent, it can be used in layer 306 (FIG. 3 ) of solar cell assemblies. - Photocatalytic material is activated by solar radiation in a process termed photocatalysis. Such activation causes the surface to be hydrophilic. Titanium dioxide or titania (e.g., TiO2) is a known photocatalysts. The preparation of TiO2 is described, for example, in U.S. Pat. No. 6,699,317, which is hereby incorporated herein by reference in its entirety. TiO2 exists in at least three natural mineral forms: anatase, rutile or brookitein TiO2. Among the three natural mineral forms, anatase is the most photoactive. Because of its unique properties, anatase is a highly favored photocatalytic material. In the present invention, TiO2 can be used to form layer 306 (
FIG. 3 ) and/or self-cleaning layer 208 (FIG. 2A andFIG. 2B ). In some embodiments of the present invention, TiO2, in the form of anatase, is present inlayers - Photocatalytic coatings comprise materials that are light radiation sensitive. One such photocatalytic coating is TiO2. Although not intending to be limited to any particular theory, the mechanism for a light-activated self-cleaning
layer 208 and/or 306 made of a material such as TiO2 is illustrated inFIG. 6A . The mechanism illustrated inFIG. 6A depicts TiO2 will be appreciated, although it is not so limited. In fact, the mechanism explains a broad range of photocatalytic materials of which TiO2 is just one example. InFIG. 6A , the photocatalytic material, TiO2 for example, is chemically activated by solar light or ultraviolet (UV) radiation. Electrons in TiO2 are excited by UV radiation. The resulting roaming electrons (e) leave behind holes (h+). Water, dirt, and other forms of debris deposit on the coated surface and either react with the electrons or donate their own electrons to fill the holes. This exchange in electrons generates highly reactive materials such as H2O2, OH−, and free oxygen radicals. As a result, through a series of UV radiation catalyzed reactions, the impurity or contaminant in the deposited layer is gradually decomposed. - In addition to their photocatalytic properties, materials such as TiO2 make it so that it is more difficult for water to nucleate and form droplets on surfaces containing such materials. Rather, the water slides over the surface as a thin film taking with it any decomposed organic matter. Although not intending to be limited to any particular theory, it is believed that this hydrophilic property arises through the mechanism depicted in
FIG. 6B . The mechanism illustrated inFIG. 6B depicts TiO2 will be appreciated, although it is not so limited. In fact, the mechanism explains a broad range of photocatalytic materials of which TiO2 is just one example.Photocatalytic material 610, such as TiO2, is embedded inresin 620, for example, to form self-cleaninglayer 208. When exposed to UV radiation, water molecules on the surface of self-cleaninglayer 208 are chemisorbed by bothphotocatalyst 610 andresin 620. As a result, the surface of self-cleaninglayer 208 becomes increasingly hydrophilic. Water spreads over the surface in a thin film instead of forming droplets. The decomposed organic and inorganic debris then gets washed away when exposed to water (e.g., rain). Thus, photocatalytic materials render a surface self-cleaning by chemically breaking up dirt and causing it to wash away - Some photocatalytic materials in accordance with the present invention are hydrophobic rather than hydrophilic. In some embodiments, the self-cleaning surface has combined hydrophilic and hydrophobic properties. U.S. Pat. No. 6,337,129 to Watanabe et al., which is hereby incorporated herein by reference in its entirety, describes bi-characteristic coating compositions that can be used in
layers 306 in accordance with the present invention. - TiO2 has a band gap of 3.2 eV, which allows the oxide to absorb light with wavelengths shorter than 385 nm. Solar radiation, however, contains only a very narrow wavelength range of such high energy rays. Systems and methods have been developed to render TiO2 more photoactive to radiation with longer wavelengths and hence less energy. For example, the photocatalytic property of TiO2 can be altered by adding dopant, such as metallic ions like Ce. Ce retards the phase transition from reactive anatase to inert rutile so that the photocatalytic coating layer remains more sensitive to UV radiation for a longer time. The Ce-doped TiO2 nano particles have better band gap and modified solar absorption. Accordingly, in some embodiments of the present invention, layers 306 and/or self-cleaning 208 comprise doped TiO2.
- In some embodiments,
layers 306 and/or self-cleaninglayer 208 comprise anatase, TiO2, rutile TiO2, brookitein TiO2, anatase sol, peroxo-modified anatase (Kon Corporation, Kishima-gun, Saga-prefecture Japan), and peroxotitanium acid (Kon Corporation). In some embodiments,layers 306 and/or self-cleaninglayer 208 comprise ZnO, SnO2, SrTiO3, WO3, Bi2O3, Fe2O3, or any combination thereof. Although not intending to be limited to any particular theory, it is believed that, similar to titania, these materials adsorb surface hydroxyl groups (OH−) from oxides, water or oxygen that are exposed to these materials. Thus, incorporation of any combination of these materials intolayers 208 and/or 306 provides the advantageous self-cleaning properties similar to the case of TiO2. Further, photocatalysts described in U.S. Pat. No. 6,013,372 and WO 97/23572, each of which is hereby incorporated herein by reference in its entirety, can be used inlayers 306 and/or 208. - In some embodiments in accordance with the present invention, inorganic oxides (e.g., 630) are combined with
photocatalysts 610 to form self-cleaninglayer 208. The inorganic oxides include, but are not limited to silica, alumina, water glass, silicate, aluminosilicate, zirconia, ceria, tin oxide, calcia, magnesia, amorphous titania and other metal oxides. In some embodiments, such materials are hydrophilified by photocatalytic action of the photocatalytic oxide. - The present invention provides no limits on the amount of photocatalytic materials present in
layers layer 208 and/or 306 can be between 1 percent and 90 percent by weight, between 20 percent and 70 percent by weight, or between 20 percent and 50 percent by weight. The balance ofsuch layers FIG. 6B ), optional inorganic oxides 630 (FIG. 6B ) and any other filler materials, at all possible combinations of ratios. - There is no requirement that
layer 208 and/or 306 be hydrophilic. For example, Ti-hydroxyapatite (TiHAP), obtained, for example, by using titanium to replace calcium in Ca-hydroxyapatite (CaHAP), shares the same photocatalytic properties as TiO2. TiHAP, however, is different from a composite of TiO2 and hydroxyapatite. It has a low refractive index and high UV adsorption power, but it does not provide the photo-induced hydrophilicity (Nonami et al., Mater. Res. Bull., 33, pp 125, 1998, which is hereby incorporated herein by reference in its entirety). Nevertheless, although it is not hydrophilic, Ti-hydroxyapatite (TiHAP) is a suitable material for use in self-cleaninglayer 208 and/or 306 in accordance with embodiments of the present invention. - In some embodiments of the present invention, self-cleaning
layer 208 and/or 306 has both hydrophilic and hydrophobic properties. For example, as described in U.S. Pat. No. 6,337,129 to Watanabe et al., which is hereby incorporated herein by reference in its entirety, self-cleaninglayer 208 comprises aphotocatalytic oxide 610 andresin 620. Resin comprises a silicone resin or silica, and a water-repellent fluororesin. In this embodiment, the silicone or silica and the water-repellent fluororesin are present in a microscopically dispersed and exposed state on the surface of self-cleaninglayer 208 and/or 306. - Embodiments of the present invention in which self-cleaning
layer 208 comprises a photocatalytic oxide (e.g., 610 ofFIG. 6B ), supporting resin (e.g., 620 ofFIG. 6B ), and optional inorganic oxide (e.g., 630 ofFIG. 6B ) have been described. Exemplary photocatalytic oxides, supporting resins, and optional inorganic oxides of the present invention include, but are not limited to, any chemically stable combination of compounds listed in Table 1 below. -
TABLE 1 Exemplary materials for assembling layers Component Exemplary materials 1. Photocatalytic materials (e.g., 610 of FIG. 6B) photocatalytic oxides anatase TiO2 rutile TiO2 brookitein TiO2 ZnO SnO2 SrTiO3 WO3 Bi2O3 Fe2O3 peroxotitanium acid peroxo-modified anatase sol Apatite derivatives Ti-HAP 2. Resins (e.g., 620 of FIG. 6B) silicone resin or silica methyltrimethoxysilane (for imparting hydrophilic methyltriethoxysilane or hydrophobic properties) methyltrichlorosilane methyltribromosilane methyltriisopropoxysilane methyl-tri-t-butoxysilane ethyltrimethoxysilane ethyltriethoxysilane ethyltrichlorosilane ethyltribromosilane ethyltriisopropoxysilane ethyl-tri-t-butoxysilane n-propyltrimethoxysilane n-propyltriethoxysilane n-propyltrichlorosilane n-propyltribromosilane n-propyltriisopropoxysilane n-propyl-tri-t-butoxysilane n-hexyltrimethoxysilane n-hexyltriethoxysilane n-hexytrichlorosilane n-hexyltribromosilane n-hexyltriisopropoxysilane n-hexyl-tri-t-butoxysilane n-decyltrimethoxysilane n-decyltriethoxysilane n-decyltrichlorosilane n-decyltribromosilane n-decyltriisopropoxysilane n-decyl-tri-t-butoxysilane n-octatrimethoxysilane n-octatriethoxysilane n-octatrichlorosilane n-octatribromosilane n-octatriisopropoxysilane n-octa-tri-t-butoxysilane phenyltrimethoxysilane phenyltriethoxysilane phenyltrichlorosilane phenyltribromosilane phenyltriisopropoxysilane phenyl-t-butoxysilane dimethyldichlorosilane dimethyldibromosilane dimethyldimethoxysilane dimethyldiethoxysilane diphenyldichlorosilane diphenyldibromosilane diphenyldimethoxysilane diphenyldiethoxysilane phenylmethyldichlorosilane phenylmethyldibromosilane phenylmethyldimethoxysilane phenylmethyldiethoxysilane vinyltrichlorosilane vinyltribromosilane vinyltrimethoxysilane vinyltriethoxysilane vinyltriisopropoxysilane vinyl-tri-t-butoxysilane trifluoropropyltrichlorosilane trifluoropropyltribromosilane trifluoropropyltrimethoxysilane trifluoropropyltriethoxysilane trifluoropropyltriisopropoxysilane trifluoropropyl-tri-t-butoxysilane γ-glycidoxypropylmethyldimethoxysilane γ-glycidoxypropylmethyldiethoxysilane γ-glycidoxypropyltrimethoxysilane γ-glycidoxypropyltriethoxysilane γ-glycidoxypropyltriisopropoxysilane γ-glycidoxypropyl-tri-t-butoxysilane γ-methacryloxypropylmethyldimethoxysilane γ-methacryloxypropylmethyldiethoxysilane γ-methacryloxypropyltrimethoxysilane γ-methacryloxypropyltriethoxysilane γ-methacryloxypropyltriisopropoxysilane γ-methacryloxypropyl-tri-t-butoxysilane γ-aminopropylmethyldimethoxysilane γ-aminopropylmethyldiethoxysilane γ-aminopropyltrimethoxysilane γ-aminopropyltriethoxysilane γ-aminopropyltriisopropoxysilane γ-aminopropyl-tri-t-butoxysilane γ-mercaptopropylmethyldimethoxysilane γ-mercaptopropylmethyldiethoxysilane γ-mercaptopropyltrimethoxysilane γ-mercaptopropyltriethoxysilane γ-mercaptopropyltriisopropoxysilane γ-mercaptopropyl-tri-t-butoxysilane β-(3,4-poxycyclohexyl)ethyltrimethoxysilane β-(3,4-epoxycyclohexyl)ethyltriethoxysilane water-repellent polytetrafluoroethylene fluoro-resin polyvinylidene fluoride polyvinyl fluoride polychlorotrifluoroethylene tetrafluoroethylene/hexafluoropropylene copolymer ethylene/tetrafluoroethylene copolymer ethylene/chlorotrifluoroethylene copolymer tetrafluoroethylene/perfluoroalkyl vinyl ether copolymer perfluorocyclo polymer vinyl ether/fluoroolefin copolymer vinyl ester/fluoroolefin copolymer tetrafluoroethylene/vinyl ether copolymer chlorotrifluoroethylene/vinyl ether copolymer urethane-crosslinked tetrafluoroethylene epoxy-crosslinked tetrafluoroethylene acryl-crosslinked tetrafluoroethylene melamine-crosslinked tetrafluoroethylene 3. Inorganic oxide (e.g., material silica alumina 630 of FIG. 6B) water glass silicate aluminosilicate zirconia ceria tin oxide calcia magnesia amorphous titania - Various techniques and methods are available for coating photocatalytic materials of the present invention onto high albedo layer 206 (
FIG. 2A ) and layer 304 (FIG. 3 ) in order to form self-cleaninglayers 208 and/or 306. Such techniques include, but are not limited to, screen or roller printing, electrostatic glazing, and //spraying. in addition, techniques described in Madou, 2002, Fundamentals of Microfabrication, Second Edition, CRC Press, Boca Raton, which is hereby incorporated herein by reference in its entirety, can be used to form self-cleaninglayer 208 and/or 306. - In some embodiments, a transparent coating is used for
layer 306 and/or self-cleaninglayer 208. In some embodiments, the photocatalytic coating materials are available as water-based solutions (e.g., Titernal W, Fushimi Co. Mizoguchi, Sanda City, Hyogo Japan) or ethanol-based solutions (e.g., Titernal E, Fushimi Co.). In some embodiments, such solutions are sprayed ontohigh albedo layer 206 and panel 304 in order to form self-cleaninglayers 208 and/or 306. - In some embodiments, self-cleaning
layer 208 and/orlayer 306 is formed using a reverse micelle dip coating method in which a transparent nano-crystalline TiO2 thin film is deposited. In the reverse micelle method a surfactant (e.g., Triton X-100), a co-surfactant (e.g., hexanol), a continuous phase (e.g., cyclohexane), and titanium isopropoxide are mixed together. The solution is applied to the proper surface (e.g., surface 304), for example, by dip coating. After drying and calcination in air, a multifunctional thin film of nano-crystalline TiO2 is formed. In some embodiments, application of the micelle solution in order to form self-cleaninglayer 208 and/orlayer 306 comprises removing excess solution, padding the surface, and heating the surface (e.g., to over 90° C.). See, for example, Daoud et al., 2004, J. Am. Ceram. Soc. 87, p. 953-555, which is hereby incorporated herein by reference in its entirety. - In some embodiments of the invention, self-cleaning
layer 208 and/orlayer 306 is formed from a peroxotitanium acid solution. The solution comprises peroxotitanium acid anywhere from 0.3% by weight up to the maximum allowed by the solubility of peroxotitanium acid in solution. Examples of such a solution include, but are not limited to, PTA-85 and PTA-170 (Green Millennium, Los Angeles, Calif.), which comprises peroxotitanium acid at 0.85% and 1.7% by weight, respectively. - In some embodiments of the invention, self-cleaning
layer 208 and/orlayer 306 is a self-cleaning photocatalytic coating material formed from peroxo-modified anatase sol. The solution comprises from peroxo-modified anatase sol anywhere from 0.3% by weight up to the maximum allowed by the solubility of peroxo-modified anatase sol in solution. Examples of such a solution include, but are not limited to, peroxo-modified anatase sol (Green Millennium, Los Angeles, Calif.) at 0.85% and 2.2% by weight, respectively. - In some embodiments of the invention, self-cleaning
layer 208 and/orlayer 306 is a self-cleaning photocatalytic coating material formed from a mixture of peroxo-modified anatase sol and peroxotitanium acid. The solution comprises peroxo-modified anatase sol and peroxotitanium acid anywhere from 0.3% by weight up to the maximum allowed by the solubility of these compounds in solution. The mixture of peroxo-modified anatase sol and peroxotitanium acid comprises two components at any ratio. Examples of such a mixture include, but are not limited to TPX-85 and TPX-220 (Green Millennium, Los Angeles, Calif.) which comprises peroxo-modified anatase sol and peroxotitanium acid at 0.85% and 2.2% by weight, respectively. - In some embodiments, a hybrid system is used to apply self-cleaning
layer 208 and/orlayer 306 when such a layer is made from anatase TiO2. The hybrid system utilizes an inert sol-gel coating and a layer of anatase TiO2 on top. For example, referring toFIG. 6B , a sol-gel layer 620 acts to adhere nano-sized TiO2 particles 610.Layer 620 also acts as a barrier to protecthigh albedo layer 206 from photocatalytic reactions. - In some embodiments, a suitable transparent coating of TiO2 is applied by methods such as painting (e.g., spraying, roller painting, etc., followed by optional heat treatment) to form self-cleaning
layer 208 and/or 306. In some embodiments,layer 306 and/or self-cleaninglayer 208 comprises TiHAP, and is applied as a spray paint. In some embodiments,layer 306 and 304 is purchased as an assembled composite comprising a glass pane (layer 304) that has already been coated with aphotocatalytic layer 306. Examples of such assembled composites include, but are not limited to, ACTIV™ glass from Pilkington Holdings Inc. (Toledo, Ohio). - In some embodiments, in order to make
layer 208 and/orlayer 306, a coating of an amorphous form of titania is deposited and then calcined to thereby transform by phase transition the amorphous titania into crystalline titania (e.g., anatase, rutile or, brookitein). Such a method can be used, for example, wherehigh albedo layer 206 is highly heat resistant (e.g., white gravel, white sand, white cement, etc.). Formation of amorphous titania can be carried out by one of the following methods. - (1) Hydrolysis and Dehydration Polymerization of Organic Titanium Compound. To an alkoxide of titanium, such as tetraethoxytitanium, tetraisopropoxytitanium, tetra-n-propoxytitanium, tetrabuthoxytitanium, or tetramethoxytitanium, is added a hydrolysis inhibitor such as hydrochloric acid and ethylamine, the mixture being diluted by alcohol such as ethanol or propanol. While subjected to partial or complete hydrolysis, the mixture is applied to the surface of the substrate by spray coating, flow coating, spin coating, dip coating, roll coating or any other suitable coating method, followed by drying at a temperature ranging from the ambient temperature to 200° C. Upon drying, hydrolysis of titanium alkoxide will be completed to result in the formation of titanium hydroxide which then undergoes dehydration polymerization whereby a layer of amorphous titania is formed on the surface of the substrate (e.g., on layer 206). In lieu of titanium alkoxide, other organic compounds of titanium such as chelate of titanium or acetate of titanium may be employed.
- (2) Formation of Amorphous Titania from Inorganic Titanium Compound. An acidic aqueous solution of an inorganic compound of titanium such as TiCl4 or Ti(SO4)2 is applied to the surface of a substrate by spray coating, flow coating, spin coating, dip coating, or roll coating. The substrate is then dried at a temperature of 100-200° C. to subject the inorganic compound of titanium to hydrolysis and dehydration polymerization to form a layer of amorphous titania on the surface of the substrate. Alternatively, amorphous titania may be formed on the surface of the substrate by chemical vapor deposition of TiCl4.
- (3) Formation of Amorphous Titania by Sputtering. Amorphous titania can be deposited on the surface of the substrate (e.g., onto layer 206) by bombarding a target of metallic titanium with an electron beam in an oxidizing atmosphere.
- (4) Calcination Temperature. Calcination of amorphous titania can be carried out at a temperature at least higher than the crystallization temperature of anatase. Upon calcination at a temperature of 400-500° C. or more, amorphous titania can be transformed into the anatase form of titania. Upon calcination at a temperature of 600-700° C. or more, amorphous titania can be transformed into the rutile form of titania.
- In some embodiments,
layer 208 and/or 306 comprises a mixture of titania and silica. In such embodiments, the ratio of silica to the sum of titania and silica (by mole percent) can be 5-90%, preferably 10-70%, more preferably 10-50%. The formation of alayer 208 and/or 306 comprised of silica-blended titania can be carried out by any of the following methods. - (1) A suspension containing particles of the anatase form or rutile form of titania and particles of silica is applied to panel 304 and/or
high albedo layer 206, followed by sintering at a temperature less than the softening point of panel 304 and orhigh albedo layer 206. - (2) A mixture of a precursor of amorphous silica (e.g., tetraalkoxysilane such as tetraethoxysilane, tetraisopropoxysilane, tetra-n-propoxysilane, tetrabuthoxysilane, and tetramethoxysilane; silanol formed by hydrolysis of tetraalkoxysilane; or polysiloxane having a mean molecular weight of less than 3000) and a crystalline titania sol is applied to panel 304 and/or
high albedo layer 206 and is subjected to hydrolysis where desired to form silanol, followed by heating at a temperature higher than about 100° C. to subject the silanol to dehydration polymerization to thereby form a photocatalytic coating wherein titania particles are bound by amorphous silica. In this regard, if dehydration polymerization of silanol is carried out at a temperature higher than about 200° C., polymerization of silanol is accomplished to a high degree so that the alkali resistance of the photocatalytic coating is enhanced. - (3) A suspension comprised of particles of silica dispersed in a solution of a precursor of amorphous titania (e.g., an organic compound of titanium such as alkoxide, chelate or acetate of titanium; or an inorganic compound of titanium such as TiCl4 and Ti(SO4)2) is applied to panel 304 and/or
high albedo layer 206 and then the precursor is subjected to hydrolysis and dehydration polymerization at a temperature ranging from the ambient temperature to 200° C. to thereby form a thin film of amorphous titania such that particles of silica are dispersed. Then, the thin film is heated at a temperature higher than the crystallization temperature of titania but lower than the softening point of the substrate to thereby transform amorphous titania into crystalline titania by phase transition. - (4) Added to a solution of a precursor of amorphous titania (e.g., an organic compound of titanium such as an alkoxide, chelate or acetate of titanium; or an inorganic compound of titanium such as TiCl4 or Ti(SO4)2) is a precursor of amorphous silica (e.g., a tetraalkoxysilane such as tetraethoxysilane, tetraisopropoxysilane, tetra-n-propoxy-silane, tetrabuthoxysilane, or tetramethoxysilane; a hydrolyzate thereof, e.g., silanol; or a polysiloxane having a mean molecular weight of less than 3000) and the mixture is applied to panel 304 and/or
high albedo layer 206. Then, these precursors are subjected to hydrolysis and dehydration polymerization to form a thin film made of a mixture of amorphous titania and amorphous silica. Thereafter, the thin film is heated at a temperature higher than the crystallization temperature of titania but lower than the softening point of panel 304 and/orhigh albedo layer 206 to thereby transform amorphous titania into crystalline titania by phase transition. - In some embodiments,
layer 208 and/orlayer 306 comprises a mixture of titania and tin oxide. The ratio of tin oxide to the sum of titania and tin oxide can be 1-95% by weight, preferably 1-50% by weight. Formation of alayer 208 and/orlayer 306 comprised of tin oxide-blended titania can be carried out by any of the following methods. - (1) A suspension containing particles of the anatase form or rutile form of titania and particles of tin oxide is applied to panel 304 and/or
high albedo layer 206, followed by sintering at a temperature less than the softening point of panel 304 and/orhigh albedo layer 206. - (2) A suspension comprised of particles of tin oxide dispersed in a solution of a precursor of amorphous titania (e.g., an organic compound of titanium such as alkoxide, chelate or acetate of titanium; or an inorganic compound of titanium such as TiCl4 or Ti(So4)2) is applied to panel 304 and/or
high albedo layer 206 and then the precursor is subjected to hydrolysis and dehydration polymerization at a temperature ranging from the ambient temperature to 200° C. to thereby form a thin film of amorphous titania such that particles of tin oxide are dispersed within the film. Then, the thin film is heated at a temperature higher than the crystallization temperature of titania but lower than the softening point of panel 304 and/orhigh albedo layer 206 to thereby transform amorphous titania into crystalline titania by phase transition. - In some embodiments,
layer 208 and/orlayer 306 is a coating composition wherein particles of a photocatalyst are dispersed in a film forming element of uncured or partially cured silicone (organopolysiloxane) or a precursor thereof. In some embodiments, the coating composition is applied on panel 304 and/orhigh albedo layer 206 and the film-forming element is then subjected to curing. Upon photoexcitation of the photocatalyst, the organic groups bonded to the silicon atoms of the silicone molecules are substituted with hydroxyl groups under the photocatalytic action of the photocatalyst. This method provides several advantages. Since the photocatalyst-containing silicone paint can be cured at ambient temperature or at a relatively low temperature, this method can be applied to a substrate formed of a non-heat-resistant material such as plastics. The coating composition containing the photocatalyst can be applied whenever desired by way of brush painting, spray coating, roll coating and the like on any existing substrate requiring superhydrophilification of the surface. - In some embodiments,
layer 208 and/or 306 is doped with a metal such as Ag, Cu and Zn. Doping of the layer with a metal such as Ag, Cu or Zn can be carried out by adding a soluble salt of such metal to a suspension containing particles of the photocatalyst, the resultant solution being used to formlayer 208 and/or 306. Alternatively, after forminglayer 208 and/or 306, a soluble salt of such metal can be applied thereon and can be subjected to irradiation of light to deposit the metal by photoreduction. While not intending to be limited to any particular theory, is believed thatlayer 208 and/or 306 doped with a metal such as Ag, Cu or Zn is capable of killing bacteria adhered to the surface. Moreover, it is believed thatdoped layers 208 and/or 306 inhibit growth of microorganisms such as mold, algae and moss. As a result,albedo surface 206 and/or panel 304 are clean for a longer period. In some embodiments,layer 208 and/or 306 can additionally be doped with a metal of the platinum group such as Pt, Pd, Rh, Ru or Ir. These metals can be similarly doped into the composition used to makelayer 208 and/or 306 by photoreduction deposition or by addition of a soluble salt. While not intending to be limited to any particular theory, it is believed that alayer 208 and/or 306 doped with a metal of the platinum group develops an enhanced photocatalytic redox activity so that decomposition of contaminants adhering on the surface is promoted. - In some embodiments,
layer layer 208/206 is one or more layers of white paint that has been doped with TiO2, anatase TiO2, rutile TiO2, brookitein TiO2, ZnO, SnO2, SrTiO3, WO3, Bi2O3, or Fe2O3, or any combination of such dopants. In some embodiments, care is taken to ensure that such dopants are in the uppermost part of combinedlayer 208/206 by adding the dopant particles (e.g., TiO2) while the paint is still wet. - In some embodiments,
layer 208 and/or 306 is administered using a hot aerosol layering operation. Such processes have been developed by companies such as Nextrom (Duluth, Georgia and Camarillo, Calif.). The hot aerosol process is based on the combustion of liquid raw materials in an atmospheric flame. As the precursor liquid is atomized, the droplets containing the raw materials and solvent evaporate, and finally condense again to become homogeneous, nano-sized particles, that are deposited onlayer 206 and/or 304. - In some embodiments of the present invention, self-cleaning
layers layers 208 and/or 306 have a self-cleaning property through some mechanism independent of a photocatalytic property. This does not necessarily mean that such layers do not include photocatalytic materials and that some self-cleaning functionality is present in such materials. In fact, it is possible that some of the compositions of matter described in this section are photocatalytic. However, in each instance, the compositions in this section provide a self-cleaning functionality by way of a mechanism that is additional to or lieu of a photocatalytic mechanism. - In some embodiments, self-cleaning
layer 208 and/orlayer 306 is a hydrophobic material. Without intending to be limited by any particular theory, when a drop of water touches a solid surface, both the solid surface and the drop are surrounded by air at the same time (FIG. 7A ). Thus, there are three phases in contact with each other: a solid, a liquid, and a gas. The interactions at this “three-phase boundary” determine the shape of the drop and how well or poorly the liquid spreads over the solid surface, in other words, how well it wets the solid substrate. One way of measuring this is the contact angle θ (FIG. 7A ). When a drop of water contacts a cleaned glass surface, the contact angle θ is around 15 degrees whereas by comparison, the same drop of water is on a Teflon coated surface forms a contact angle of 109° . This demonstrates that Teflon has desirable hydrophobic properties. However, Teflon absorbs light in the upper visible and UV ranges (Seres et al., 1994, Opt. Eng. 33, p. 3031-3033, which is hereby incorporated herein by reference in its entirety) and in the infrared region between 6 μm to 8 μm (Hollahan et al., 1974, Applied Opt. 13, p. 1844-1849, which is hereby incorporated herein by reference in its entirety). Such absorption compromises the efficiency of solar energy conversion. Therefore, the use of TEFLON® coating for use as self-cleaninglayers 208 and/or 306 may be limited. An alternative to TEFLON® is a water repellant coating constructed from a composite material of CaF2 and TiO2, as described by Tsai et al., in U.S. Pat. No. 6,383,629, which is hereby incorporated herein by reference in its entirety. Though the composite material of CaF2 and TiO2 does not have a contact angle θ that is significantly better than that of Teflon, it does not have the optical limitations of Teflon material. In some embodiments, self-cleaninglayer 208 and/orlayer 306 is made of polytetrafluoroethylene (PTFE) [—CF2—CF2—]n or polychlorotrifluoroethylene (PCTFE) [—CF2—CFCl —]n. In some embodiments, self-cleaninglayer 208 comprises a TEFLON® coating. See, for example, U.S. Pat. No. 4,869,922 to D'Agositno, U.S. Pat. No. 4,410,563 to Richter and Dibble, as well as Hollahan et al., Applied Opt. 13, p. 1844-1849, 1974, each of which is hereby incorporated herein by reference in its entirety. In some embodiments, self-cleaninglayer 208 comprises CaF2 and TiO2. In some embodiments, self-cleaninglayer 208 comprises a material having a chemical formula (100-X)CaF2—(X)TiO2, where X is the molar percentage of TiO2. For more information on such compounds, see U.S. Pat. No. 6,383,629 to Tsai et al., which is hereby incorporated herein by reference in its entirety. In some embodiments, X is between 1 percent and 50 percent. In some embodiments, X is between 2 percent and 45 percent. In some embodiments, X is between 10 percent and 30 percent. - In some embodiments in accordance with the present invention, the Lotus-Effect is used to provide desired self-cleaning properties like that found in plant leaves such as the Sacred Water Lilly (Nelumbo nucifera). The Lotus-Effect is based on the interaction between a solid surface (lotus leaf) and its environment (water droplets), and is therefore a surface phenomenon. Electron microscopy study of the lotus leaves revealed that they have “rough” surfaces of small humps and some fronds (e.g., 710 in
FIG. 7C ). In addition, the surfaces of the lotus leaves are coated by hydrophobic wax-like material (e.g. 720 inFIG. 7C ). The combination of these two factors results in a hydrophobic nano-or micro-structured surface (e.g., self-cleaning 208 orlayer 306 inFIG. 7B andFIG. 7C ). The relationship of micro- or nano- structured “rough” surfaces and hydrophobicity, and the applicability of the “Lotus Effect” on surfaces, is described in U.S. Pat. No. 6,800,354 to Baumann, et al. and by U.S. Pat. No. 6,852,389 to Nun, et al., each of which is hereby incorporated herein by reference in its entirety. - In some embodiments, of the present invention, self-cleaning
layer 208 and/orlayer 306 is a rough surface comprising hydrophobic nano- or micro-structured surfaces as illustrated inFIG. 7B . In some embodiments, such structured surfaces cause water to have a contact angle θ that exceeds 160 degree. The size of the surface structures (e.g., 710 inFIG. 7C ) ranges from several nanometers up to 50 microns. When combined with hydrophobic coatings (e.g., 720 inFIG. 7C ), such “rough” surfaces are effectively hydrophobic. Spherical water droplets roll off such surfaces (e.g., self-cleaninglayer 208 orlayer 306 inFIG. 7B and 7C). Therefore, they remain dry even when it is raining In some embodiments the materials used to makesurface structures 710 andhydrophobic coatings 720 are transparent. Such materials can therefore be used to formlayer 306 on solar cells in addition to forming a self-cleaninglayer 208 onhigh albedo layer 206.Particles 710 can be obtained in commercially available sizes and or by a precipitation processes such as, for example, by a pyrogenic process. Alternatively,particles 710 can be obtained be obtained from a gaseous starting material that is converted into a pulverulent substance. -
Particles 710 can be any combination of the materials listed in Table 2 below. In some embodiments,particles 710 comprise oxides such as SiO2, TiO2, Al2O3, ZrO2 or SnO2. These oxides are typically pyrogenically prepared oxides. In someembodiments particles 710 are pyrogenic silica with an average primary particle size in the range between about 7 nm and 40 nm. In some embodiments,particles 710 comprise a silicate, a doped silicate, a mineral, a metal oxide, a silica, a polymer, and/or a coated metal powder. In some embodiments,particles 710 comprise fumed silica, precipitated silica, or a pulverulent polymer, e.g., a cryogenically milled or spray-dried polytetrafluoroethylene (PTFE). - In some embodiments, self-cleaning
layer 208 is LOTUSAN™ paint (Sto, Germany). The paint can be applied with brush, roller, or proper spray equipment. The LOTUSAN™ paint comprises 1-5% triethoxy (2,4,4-trimethylpentyl) silane, 15-40% Cristobalite (SiO2), and 10-30% TiO2, by weight. In some embodiments, the self-cleaning layer is a hydrophilic paint that comprises an acrylic resin, an acryl-silicone resin, an aqueous silicone, a block copolymer of silicone resin and acrylic resin, an acryl-styrene resin, an ethylene oxide of sorbitan fatty acid, an ester of sorbitan fatty acid, an acetate of urethane, a cross-linked urethane of polycarbonatediol and/or polyisocyanate, or a cross-linked polymer of alkylester polyacrylate. In some embodiments, self-cleaninglayer 208 is a water-repellant paint containing polytetrafluoroethylene (PFTE). In embodiments wherelayer 208 is a paint, high-albedo layer 206 is optional, particularly in instances where the paint used forlayer 208 is a white paint or otherwise has an albedo greater than ninety percent. - It is to be noted that although TiO2 and other photocatalytic oxides are found in various hydrophobic coating materials listed herein, it is not because of their possible photocatalytic properties. Rather, such oxides provide roughness and control the formation of micro- or nano- structured hydrophobic surfaces.
-
TABLE 2 Exemplary materials for use in layers photoactivity is not the primary basis for self-cleaning Component Exemplary materials 1. Teflon Coating polytetrafluoroethylene (PTFE) 2. Composite inorganic coating polychlorotrifluoroethylene (PCTFE) 3. Coating based on Lotus Effect CaF2 and TiO2 3a. Structural forming material metal oxides inorganic substances mixed oxides silicates sulfates phosphates borates metal sulfides oxosulfides selenides sulfoselenides metal nitrides oxide nitrides Organic substances nanoscale organic polymeric particles nanoscale organic polymeric particles containing fluorine. 3b. Hydrophobic coating particles comprising PTFE or any other suitable hydrophobic materials - In some embodiments,
high albedo layer 206 and self-cleaninglayer 208 form a single self-cleaning high albedo layer. The self-cleaning property in such a layer can be rendered by either a photocatalytic or hydrophobic mechanism. One embodiment in accordance with this aspect of the invention is the application of white Lotusan™ LOTUSAN™ paint as a single combinedlayer 206/208. - Another aspect of the present invention provides a self-cleaning
albedo device 220 as illustrated, for example, inFIG. 2B . In some embodiments,device 220 is attached to the base of photovoltaiccell supporting system 216. In some embodiments,device 220 comprises asubstrate 222 with ahigh albedo layer 206 disposed thereon. Typically,substrate 222 is made of a highly flexible material that can be rolled or folded up. In some embodiments, ahigh albedo layer 206, for example, a layer of white paint or any of the materials described forlayer 206 in preceding sections, is disposed onsubstrate 222. In some embodiments,flexible substrate 222 is itself a high albedo material.High albedo layer 206 is not necessary embodiments ofdevice 220 where thesubstrate 222 has high albedo (e.g. albedo greater than ninety percent). As illustrated inFIG. 2B , self-cleaninglayer 208 is disposed on high albedo layer 206 (or directly ontoflexible substrate 222 in instances whereflexible substrate 222 possesses albedo properties and thushigh albedo layer 206 is not present). - In some
embodiments device 220 comprises a single layer of MYLAR® or any of a number of other low-cost plastics that can be manufactured with high albedo. In such embodiments,flexible substrate 222 is optional and often is not included. Furthermore, because of the low cost the MYLAR® (or other type of low-cost plastic), in some embodiments self-cleaninglayer 208 is not present as well. - In some embodiments, there is a sloped gradient between respective solar cell assemblies in the manner illustrated in
FIG. 2B . Each solar cell assembly includes arespective device 220 as illustrated inFIG. 2B . In some embodiments,device 220 is rolled down the gradient. Thus, any water that lands ondevice 220 rolls down the gradient rather than collecting on the surface and forming water spots. In some embodiments,device 220 is a folded assembly instead of the roll-up type. Regardless of whetherassembly 220 is of the roll-up type or the fold-up type, theassembly 220 will preferably attach to hooks on the bottom of each photovoltaiccell supporting system 216 in order to allow thedevice 220 to be removed to make room for maintenance. - In some embodiments in accordance with the present invention,
device 220 is a plastic sheet that can be easily rolled or folded away, stored and assembled with any existing photovoltaic cell system. See Section 5.5 for more description of photovoltaic cell systems that can be used in the present invention. In some embodiments in accordance with the present invention,device 220 is a self-cleaning albedo plastic sheet that can be rolled or folded out and attached to thebase 216 of thephotovoltaic cell support 216 by a hinge mechanism. - In some embodiments in accordance with the present invention,
substrate 222 is a board that can be easily stored and assembled in any existing photovoltaic cell systems.High albedo layer 206, for example a layer of white paint, is disposed uponsubstrate 222. A self-cleaninglayer 208 is then disposed uponhigh albedo layer 206. - Some embodiments of the present invention provide a photovoltaic cell system comprising a plurality of photovoltaic cell assemblies. Each assembly in the plurality of photovoltaic cell assemblies comprises a base, a solar cell panel attached to the base, and a self-cleaning albedo device (e.g.,
device 220 ofFIG. 2B ), attached to the base. The self-cleaning albedo device comprises a flexible substrate (e.g., 222 ofFIG. 2B ), a high albedo layer (e.g.,layer 206 ofFIG. 2B ), and a self-cleaning layer (e.g.,layer 208 ofFIG. 2B ). The high albedo layer is disposed on the flexible substrate and the self-cleaning layer is disposed on the high albedo layer. In some embodiments, the photovoltaic system further comprises a retractable roller mounted on the base for retracting the self-cleaning albedo device into a roll. For example, in some embodiments, the self-cleaning albedo device has an open configuration and a closed configuration. The self-cleaning albedo device is rolled up in the retractable roller when the self-cleaning albedo device is in the closed position. Further, the self-cleaning albedo device is extended in a downward gradient away from the base when the self-cleaning albedo device is in the open position. - Referring to
FIG. 5A , in one embodiment,semiconductor junction 510 is a heterojunction between anabsorber layer 502, disposed onconductive core 504, and ajunction partner layer 504, disposed onabsorber layer 502.Layers junction partner layer 504 has a larger band gap thanabsorber layer 502. In some embodiments,absorber layer 502 is p-doped andjunction partner layer 504 is n-doped. In such embodiments,TCO layer 512 is n+-doped. In alternative embodiments,absorber layer 502 is n-doped andjunction partner layer 504 is p-doped. In such embodiments,TCO layer 512 is p+-doped. In some embodiments, the semiconductors listed in Pandey, 1996, Handbook of Semiconductor Electrodeposition, Marcel Dekker Inc., Appendix 5, which is hereby incorporated herein by reference in its entirety, are used to formsemiconductor junction 510. - Continuing to refer to
FIG. 5A , in some embodiments,absorber layer 502 is a group I-III-VI2 compound such as copper indium di-selenide (CuInSe2; also known as CIS). In some embodiments,absorber layer 502 is a group I-III-VI2 ternary compound selected from the group consisting of CdGeAs2, ZnSnAs2, CuInTe2, AgInTe2, CuInSe2, CuGaTe2, ZnGeAs2, CdSnP2, AgInSe2, AgGaTe2, CuInS2, CdSiAs2, ZnSnP2, CdGeP2, ZnSnAs2, CuGaSe2, AgGaSe2, AgInS2, ZnGeP2, ZnSiAs2, ZnSiP2, CdSiP2, or CuGaS2 either the p-type or the n-type when such compound is known to exist. - In some embodiments,
junction partner layer 504 is CdS, ZnS, ZnSe, or CdZnS. In one embodiment,absorber layer 502 is p-type CIS andjunction partner layer 504 is n-type CdS, ZnS, ZnSe, or CdZnS.Such semiconductor junctions 510 are described in Chapter 6 of Bube, 1998, Photovoltaic Materials, Imperial College Press, London, which is hereby incorporated herein by reference in its entirety. - In some embodiments,
absorber layer 502 is copper-indium-gallium-diselenide (CIGS). In some embodiments,absorber layer 502 is copper-indium-gallium-diselenide (CIGS) andjunction partner layer 504 is CdS, ZnS, ZnSe, or CdZnS. In some embodiments,absorber layer 502 is p-type CIGS andjunction partner layer 504 is n-type CdS, ZnS, ZnSe, or CdZnS. - In some embodiments, referring to
FIG. 5B ,semiconductor junction 510 comprises amorphous silicon. In some embodiments, this is an n/n type heterojunction. For example, in some embodiments,layer 514 comprises SnO2(Sb),layer 512 comprises undoped amorphous silicon, andlayer 510 comprises n+ doped amorphous silicon. - In some embodiments,
semiconductor junction 510 is a p-i-n type junction. For example, in some embodiments,layer 514 is p+ doped amorphous silicon,layer 512 is undoped amorphous silicon, andlayer 510 is n+ amorphous silicon.Such semiconductor junctions 510 are described in Chapter 3 of Bube, Photovoltaic Materials, 1998, Imperial College Press, London, which is hereby incorporated herein by reference in its entirety. - In some embodiments of the present invention,
semiconductor junction 510 is based upon thin-film polycrystalline. Referring toFIG. 5B , in one example in accordance with such embodiments,layer 510 is a p-doped polycrystalline silicon,layer 512 is depleted polycrystalline silicon andlayer 514 is n-doped polycrystalline silicon. Such semiconductor junctions are described in Green, 1995, Silicon Solar Cells: Advanced Principles & Practice, Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney; and Bube, 1998, Photovoltaic Materials, pp. 57-66, Imperial College Press, London, which is hereby incorporated herein by reference in its entirety. - In some embodiments of the present invention,
semiconductor junctions 510 based upon p-type microcrystalline Si:H and microcrystalline Si:C:H in an amorphous Si:H photovoltaic cell are used. Such semiconductor junctions are described in Bube, 1998, Photovoltaic Materials, pp. 66-67, Imperial College Press, London, and the references cited therein, which is hereby incorporated herein by reference in its entirety. - In some embodiments,
semiconductor junctions 510 are based upon gallium arsenide (GaAs) or other III-V materials such as InP, AlSb, and CdTe. GaAs is a direct-band gap material having a band gap of 1.43 eV and can absorb 97% of AM1 radiation in a thickness of about two microns. Suitable type III-V junctions that can serve assemiconductor junctions 510 of the present invention are described in Chapter 4 of Bube, 1998, Photovoltaic Materials, Imperial College Press, London, which is hereby incorporated herein by reference in its entirety. - Furthermore, in some
embodiments semiconductor junction 510 is a hybrid multijunction photovoltaic cells such as a GaAs/Si mechanically stacked multijunction as described by Gee and Virshup, 1988, 20th IEEE Photovoltaic Specialist Conference, IEEE Publishing, New York, p. 754, which is hereby incorporated herein by reference in its entirety, a GaAs/CuInSe2 MSMJ four-terminal device, consisting of a GaAs thin film top cell and a ZnCdS/CuInSe2 thin bottom cell described by Stanbery et al., 19th IEEE Photovoltaic Specialist Conference, IEEE Publishing, New York, p. 280, and Kim et al., 20th IEEE Photovoltaic Specialist Conference, IEEE Publishing, New York, p. 1487, each of which is hereby incorporated herein by reference in its entirety. Other hybrid multijunction photovoltaic cells are described in Bube, 1998, Photovoltaic Materials, pp. 131-132, Imperial College Press, London, which is hereby incorporated herein by reference in its entirety. - In some embodiments,
semiconductor junctions 510 are based upon II-VI compounds that can be prepared in either the n-type or the p-type form. Accordingly, in some embodiments, referring toFIG. 5C ,semiconductor junction 510 is a p-n heterojunction in which layers 520 and 540 are any combination set forth in the following table or alloys thereof -
Layer 520Layer 540 n-CdSe p-CdTe n-ZnCdS p-CdTe n-ZnSSe p-CdTe p-ZnTe n-CdSe n-CdS p-CdTe n-CdS p-ZnTe p-ZnTe n-CdTe n-ZnSe p-CdTe n-ZnSe p-ZnTe n-ZnS p-CdTe n-ZnS p-ZnTe - Methods for manufacturing
semiconductor junctions 510 are based upon II-VI compounds are described in Chapter 4 of Bube, 1998, Photovoltaic Materials, Imperial College Press, London, which is hereby incorporated herein by reference in its entirety. - While
semiconductor junctions 510 that are made from thin semiconductor films are preferred, the invention is not so limited. In someembodiments semiconductor junctions 510 is based upon crystalline silicon. For example, referring toFIG. 5D , in some embodiments,semiconductor junction 510 comprises a layer of p-type crystalline silicon 540 and a layer of n-type crystalline silicon 550. Methods for manufacturing crystallinesilicon semiconductor junctions 510 are described in Chapter 2 of Bube, Photovoltaic Materials, 1998, Imperial College Press, London, which is which is hereby incorporated herein by reference in its entirety. - The self-cleaning surfaces of the present invention can be used with a wide variety of photovoltaic types including, but not limited to, wire-shaped, tube-shaped and flat panel-shaped. The self-cleaning surfaces of the present invention can be used with mono-facial, bi-facial, and multi-facial photovoltaic cells. The self-cleaning surfaces of the present invention can be used with moveable as well as stationary photovoltaic cells. The self-cleaning surfaces of the present invention can be used with photovoltaic cells having any of the junction types described in Section 5.4. Furthermore, the photovoltaic cells of the present invention can be used with photovoltaic cell concentrators.
- There is no limit to the types and architectures of photovoltaic cells 210 (
FIG. 2 ) that can benefit from the self-cleaninglayers photovoltaic cells 210 include, but are not limited to any of the photovoltaic cells described in U.S. Pat. Nos. 6,846,984; 6,830,740; 6,825,409; 6,818,819; 6,809,252; 6,803,515; 6,802,926; 6,787,692; 6,784,358; 6,750,394; 6,746,709; 6,743,974; 6,717,519; 6,696,739; 6,692,981; 6,689,950; 6,683,361; 6,676,459; 6,667,434; 6,664,169; 6,660,930; 6,639,143; 6,638,788; 6,635,817; 6,617,508; 6,613,973; 6,606,830; 6,605,881; 6,593,522; 6,581,589; 6,566,595; 6,566,159; 6,563,289; 6,555,443; 6,552,259; 6,552,258; 6,548,751; 6,545,211; 6,541,696; 6,541,693; 6,540,178; 6,534,704; 6,534,334; 6,525,264; 6,525,262; 6,524,880; 6,521,827; 6,521,826; 6,521,823; 6,521,821; 6,518,944; 6,515,216; 6,512,171; and 6,509,204, each of which is hereby incorporated herein by reference in its entirety. - Still another type of photovoltaic cell that can benefit from the self-cleaning layers of the present invention are the type of photovoltaic cells found in U.S. Pat. No. 6,762,359 B2 to Asia et al., which is hereby incorporated herein by reference in its entirety, in which a photovoltaic cell including a p-type layer and an n-type layer is disclosed. Still another type of photovoltaic cell that can benefit from the self-cleaning layers of the present invention is the type of photovoltaic cells found in U.S. Pat. No. 3,976,508 to Mlaysky, which is hereby incorporated herein by reference in its entirety, in which a tubular photovoltaic cell comprising a cylindrical silicon tube of n-type conductivity that has been subjected to diffusion of boron into its outer surface to form an outer p-conductivity type region 4 and thus a p-n junction. Still another type of photovoltaic cell that can benefit from the self-cleaning layers of the present invention are the type of photovoltaic cells found in U.S. Pat. No. 3,990,914 to Weinstein and Lee, which is hereby incorporated herein by reference in its entirety, in which another form of tubular photovoltaic cell is disclosed. Still another type of photovoltaic cell that can benefit from the self-cleaning layers of the present invention are the type of photovoltaic cells found in Japanese Patent Application Kokai Publication Number S59-125670, Toppan Printing Company, published Jul. 20, 1984 (hereinafter “S59-125670”), which is hereby incorporated herein by reference in its entirety, in which a rod-shaped photovoltaic cell is disclosed. Yet another type of photovoltaic cell that can benefit from the self-cleaning layers of the present invention is the type of photovoltaic cells found in German Unexamined Patent Application DE 43 39 547 Al to Twin Solar-Technik Entwicklungs-GmbH, published May 24, 1995, (hereinafter “Twin Solar”), which is hereby incorporated herein by reference in its entirety, in which a plurality of rod-shaped photovoltaic cells arranged in a parallel manner inside a transparent sheet, which forms the body of the photovoltaic cell.
- One aspect of the invention provides a photovoltaic cell system comprising a plurality of photovoltaic cell assemblies. Each assembly in the plurality of photovoltaic cell assemblies comprises a front side and a back side. Each of these front sides and back sides is configured to receive electromagnetic energy. Each of the photovoltaic assemblies in the plurality of photovoltaic assemblies is configured to convert electromagnetic energy into an electrical current. Each respective photovoltaic cell assembly in the plurality of photovoltaic cell assemblies further comprises a first self-cleaning layer disposed on the corresponding front side of the respective photovoltaic cell assembly. In some embodiments, each respective photovoltaic cell assembly in the plurality of photovoltaic cell assemblies further comprises a second self-cleaning layer disposed on the corresponding back side of the respective photovoltaic cell assembly. In some embodiments, the first self-cleaning layer and/or the second self-cleaning layer is one or more layers of photocatalytic coating, nano-particles and/or titanium oxide. In some embodiments, the first self-cleaning layer and/or the second self-cleaning layer is a hydrophobic layer.
- All references cited herein are incorporated herein by reference in their entirety and for all purposes to the same extent as if each individual publication or patent or patent application was specifically and individually indicated to be incorporated by reference in its entirety for all purposes.
- Many modifications and variations of this invention can be made without departing from its spirit and scope, as will be apparent to those skilled in the art.
Claims (40)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/875,059 US20100326495A1 (en) | 2005-07-19 | 2010-09-02 | Self-cleaning protective coatings for use with photovoltaic cells |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70098205P | 2005-07-19 | 2005-07-19 | |
US11/315,523 US8344238B2 (en) | 2005-07-19 | 2005-12-21 | Self-cleaning protective coatings for use with photovoltaic cells |
US12/875,059 US20100326495A1 (en) | 2005-07-19 | 2010-09-02 | Self-cleaning protective coatings for use with photovoltaic cells |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/315,523 Continuation US8344238B2 (en) | 2005-07-19 | 2005-12-21 | Self-cleaning protective coatings for use with photovoltaic cells |
Publications (1)
Publication Number | Publication Date |
---|---|
US20100326495A1 true US20100326495A1 (en) | 2010-12-30 |
Family
ID=37398719
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/315,523 Expired - Fee Related US8344238B2 (en) | 2005-07-19 | 2005-12-21 | Self-cleaning protective coatings for use with photovoltaic cells |
US12/875,059 Abandoned US20100326495A1 (en) | 2005-07-19 | 2010-09-02 | Self-cleaning protective coatings for use with photovoltaic cells |
US12/880,098 Abandoned US20110000539A1 (en) | 2005-07-19 | 2010-09-11 | Self-cleaning protective coatings for use with photovoltaic cells |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/315,523 Expired - Fee Related US8344238B2 (en) | 2005-07-19 | 2005-12-21 | Self-cleaning protective coatings for use with photovoltaic cells |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/880,098 Abandoned US20110000539A1 (en) | 2005-07-19 | 2010-09-11 | Self-cleaning protective coatings for use with photovoltaic cells |
Country Status (2)
Country | Link |
---|---|
US (3) | US8344238B2 (en) |
WO (1) | WO2007012026A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110209746A1 (en) * | 2009-09-06 | 2011-09-01 | Hanzhong Zhang | Tubular Photovoltaic Device and Method of Making |
US20130041083A1 (en) * | 2010-04-30 | 2013-02-14 | Battelle Memorial Institute | Composition for easy to clean surfaces |
CN104804365A (en) * | 2015-04-28 | 2015-07-29 | 上海锦湖日丽塑料有限公司 | Low-emission self-cleaning ABS (acrylonitrile butadiene styrene) and preparation method thereof |
US9654053B2 (en) | 2015-09-01 | 2017-05-16 | Sun Energy, Inc. | Solar module support structure |
CN107285352A (en) * | 2017-06-13 | 2017-10-24 | 深圳市雄韬电源科技股份有限公司 | The preparation method and applications of nano aluminium oxide |
CN110079223A (en) * | 2019-05-15 | 2019-08-02 | 王崧 | It is a kind of it is high adherency, low permeable photovoltaic cell component packaging EVA adhesive film |
CN110346543A (en) * | 2019-06-04 | 2019-10-18 | 浙江和谐光催化科技有限公司 | A kind of photocatalytic self-cleaning coating function method used for building exterior wall |
CN111334100A (en) * | 2020-03-16 | 2020-06-26 | 日升运维河北新能源有限公司 | Super-hydrophilic coating agent for front side of photovoltaic module, preparation method and application method |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8634908B2 (en) | 2005-08-01 | 2014-01-21 | Ebr Systems, Inc. | Efficiently delivering acoustic stimulation energy to tissue |
US20080047599A1 (en) * | 2006-03-18 | 2008-02-28 | Benyamin Buller | Monolithic integration of nonplanar solar cells |
US8017247B2 (en) * | 2007-03-30 | 2011-09-13 | Alcoa Inc. | Self cleaning aluminum alloy substrates |
US8093493B2 (en) * | 2007-04-30 | 2012-01-10 | Solyndra Llc | Volume compensation within a photovoltaic device |
US8106292B2 (en) | 2007-04-30 | 2012-01-31 | Solyndra Llc | Volume compensation within a photovoltaic device |
US20080295884A1 (en) * | 2007-05-29 | 2008-12-04 | Sharma Pramod K | Method of making a photovoltaic device or front substrate with barrier layer for use in same and resulting product |
US7910220B2 (en) * | 2007-07-25 | 2011-03-22 | Alcoa Inc. | Surfaces and coatings for the removal of carbon dioxide |
CN101369467B (en) * | 2007-08-13 | 2013-01-09 | 鸿富锦精密工业(深圳)有限公司 | Protection screen and preparation method thereof, and display equipment adopting the protection screen |
DE102008045997A1 (en) * | 2007-10-23 | 2009-04-30 | Bluenergy Ag | Encapsulated solar cell |
US20090223554A1 (en) * | 2008-03-05 | 2009-09-10 | Emcore Corporation | Dual Sided Photovoltaic Package |
ITNA20080048A1 (en) * | 2008-07-30 | 2010-01-31 | Flavio Riccelli | THERMO-PHOTOVOLTAIC LAMINAR PANEL |
US20150075599A1 (en) * | 2013-09-19 | 2015-03-19 | Zena Technologies, Inc. | Pillar structured multijunction photovoltaic devices |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US7846866B2 (en) * | 2008-09-09 | 2010-12-07 | Guardian Industries Corp. | Porous titanium dioxide coatings and methods of forming porous titanium dioxide coatings having improved photocatalytic activity |
US8647652B2 (en) * | 2008-09-09 | 2014-02-11 | Guardian Industries Corp. | Stable silver colloids and silica-coated silver colloids, and methods of preparing stable silver colloids and silica-coated silver colloids |
US20100062265A1 (en) * | 2008-09-09 | 2010-03-11 | Guardian Industries Corp. | Titanium Dioxide Coatings and Methods of Forming Titanium Dioxide Coatings Having Reduced Crystallite Size |
US20100062032A1 (en) * | 2008-09-09 | 2010-03-11 | Guardian Industries Corp. | Doped Titanium Dioxide Coatings and Methods of Forming Doped Titanium Dioxide Coatings |
CN102164653B (en) * | 2008-09-29 | 2015-05-27 | 开利公司 | Catalytic substrates and methods for creating catalytic coatings for indoor air quality applications |
ITNA20080063A1 (en) * | 2008-10-30 | 2010-04-30 | Flavio Riccelli | REFLECTIVE MULTIFACIAL PHOTOVOLTAIC SYSTEM |
US8545899B2 (en) * | 2008-11-03 | 2013-10-01 | Guardian Industries Corp. | Titanium dioxide coatings having roughened surfaces and methods of forming titanium dioxide coatings having roughened surfaces |
DE102008056792B4 (en) | 2008-11-11 | 2018-06-28 | Schott Ag | Method for applying a porous self-cleaning anti-reflection coating and glass with this anti-reflection coating and use of a self-cleaning porous anti-reflection coating |
EP2192091A1 (en) * | 2008-12-01 | 2010-06-02 | ETH Zurich | Process for providing super-hydrophilic properties to a substrate |
TW201030994A (en) * | 2009-02-12 | 2010-08-16 | Nexpower Technology Corp | Two sided light absorbing type solar cell |
TW201034210A (en) * | 2009-03-10 | 2010-09-16 | Everphoton Energy Corp | Light-concentrating type solar power generation module that is easy to maintain |
DE202009006085U1 (en) | 2009-04-28 | 2010-09-23 | ILZHÖFER, Werner | Arrangement for generating electricity |
EP2278624A1 (en) | 2009-07-24 | 2011-01-26 | University College Cork-National University of Ireland, Cork | Conducting self-cleaning materials and process for producing same |
US8617665B2 (en) * | 2009-08-03 | 2013-12-31 | Alcoa, Inc. | Self-cleaning substrates and methods for making the same |
KR20120055588A (en) * | 2009-08-05 | 2012-05-31 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Barrier-coated thin-film photovoltaic cells |
US20110076450A1 (en) * | 2009-09-29 | 2011-03-31 | Sharma Pramod K | Titanium dioxide coatings and methods of forming improved titanium dioxide coatings |
US10319870B2 (en) * | 2009-11-02 | 2019-06-11 | International Business Machines Corporation | Photovoltaic module with a controllable infrared protection layer |
WO2011073033A2 (en) * | 2009-12-15 | 2011-06-23 | Siemens Aktiengesellschaft | Solar power generator |
US8114197B2 (en) * | 2009-12-22 | 2012-02-14 | Hollingsworth & Vose Company | Filter media and articles including dendrimers and/or other components |
MA34009B1 (en) * | 2010-01-29 | 2013-02-01 | Volotek Sa | Advanced solar panels and self-cleaning |
WO2011143222A2 (en) * | 2010-05-11 | 2011-11-17 | Bakersun | Bifacial thin film solar panel and methods for producing the same |
DE102010017246A1 (en) * | 2010-06-04 | 2011-12-08 | Solibro Gmbh | Solar cell module and manufacturing method therefor |
IT1401483B1 (en) | 2010-07-29 | 2013-07-26 | I Agenzia Spaziale Italiana As | PROCESS OF MANUFACTURING OF ELEMENTS FOR HOUSING AND / OR INDUSTRIAL STRUCTURES ON THE LUNAR AND / OR MARTIAL SOIL |
US9118272B2 (en) * | 2010-09-08 | 2015-08-25 | Momentive Performance Materials Inc. | Light trapping photovoltaic cells |
US20120067396A1 (en) * | 2010-09-17 | 2012-03-22 | Visvamohan Yegnashankaran | Hydrophobic Solar Concentrator and Method of Using and Forming the Hydrophobic Solar Concentrator |
US8357553B2 (en) | 2010-10-08 | 2013-01-22 | Guardian Industries Corp. | Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same |
JP6328423B2 (en) | 2010-10-15 | 2018-05-23 | ソルベイ スペシャルティ ポリマーズ イタリー エス.ピー.エー. | Multilayer assembly |
CN103153616B (en) | 2010-10-15 | 2015-07-29 | 索尔维特殊聚合物意大利有限公司 | Fluoropolymer composition |
US9893223B2 (en) | 2010-11-16 | 2018-02-13 | Suncore Photovoltaics, Inc. | Solar electricity generation system |
CN102479846A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Coating type solar cell and manufacturing method thereof |
US9337361B2 (en) * | 2010-11-26 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
CN102214717B (en) * | 2011-01-28 | 2013-03-27 | 常州南洲新能源研发中心有限公司 | Compounding process of solar energy and thermoelectricity integrated silicon battery compound board |
CN103262282B (en) | 2011-02-01 | 2017-02-08 | 南佛罗里达大学 | A partially-sprayed layer organic solar photovoltaic cell using a self-assembled monolayer and method of manufacture |
JP2014507816A (en) | 2011-03-08 | 2014-03-27 | ユニヴァーシティ オブ サウス フロリダ | Inverted organic solar cell microarray for microelectromechanical systems |
WO2012138992A2 (en) * | 2011-04-06 | 2012-10-11 | The Trustees Of The University Of Pennsylvania | Design and manufacture of hydrophobic surfaces |
JP2015043113A (en) * | 2011-12-26 | 2015-03-05 | 旭硝子株式会社 | High-resistance laminated body and front plate for tactile sensor |
US9082914B2 (en) * | 2012-01-13 | 2015-07-14 | Gaurdian Industries Corp. | Photovoltaic module including high contact angle coating on one or more outer surfaces thereof, and/or methods of making the same |
KR101316734B1 (en) * | 2012-02-06 | 2013-10-10 | 한국과학기술연구원 | Hydrophobic substrate with anti-reflective property and method for manufacturing the same, and solar cell module comprising the same |
US20130199609A1 (en) * | 2012-02-06 | 2013-08-08 | Scuint Corporation | Solar Cell Connector |
US20130319502A1 (en) * | 2012-05-31 | 2013-12-05 | Aqt Solar, Inc. | Bifacial Stack Structures for Thin-Film Photovoltaic Cells |
US8756739B1 (en) | 2012-10-01 | 2014-06-24 | Taft Instruments, Inc. | Automatic solar power surface-cleaner |
ITTO20120994A1 (en) * | 2012-11-16 | 2014-05-17 | Photovoltaic Systems S R L | REFLECTIVE COVER FOR PHOTOVOLTAIC SYSTEMS |
JP5981325B2 (en) * | 2012-11-30 | 2016-08-31 | 京セラ株式会社 | Solar power system |
JP2014143376A (en) * | 2013-01-25 | 2014-08-07 | Sony Corp | Semiconductor device and method for manufacturing semiconductor device |
US10254011B2 (en) * | 2013-04-02 | 2019-04-09 | Energy Related Devices, Inc. | Photovoltaic module mounting to rubber tires |
US20140352751A1 (en) * | 2013-05-31 | 2014-12-04 | Tsmc Solar Ltd. | Solar cell or tandem solar cell and method of forming same |
US9799883B2 (en) * | 2013-06-10 | 2017-10-24 | Shailesh Upreti | Bio-mineralized cathode and anode materials for electrochemical cell |
CN103701405A (en) * | 2013-12-13 | 2014-04-02 | 华北电力大学 | Solar power supply system applied to snow-covered plateau |
CN103725081A (en) * | 2013-12-31 | 2014-04-16 | 张锦碧 | Water-borne paint aid and preparation method thereof |
DE112014006329A5 (en) * | 2014-02-03 | 2017-03-09 | Hemmelrath Technologies Gmbh | Paints, lacquers or other anti-crater additive coatings and their preparation and use |
AP2016009625A0 (en) * | 2014-05-22 | 2016-12-31 | Solar Cubed Dev Llc | Full spectrum electro-magnetic energy system |
US10828400B2 (en) | 2014-06-10 | 2020-11-10 | The Research Foundation For The State University Of New York | Low temperature, nanostructured ceramic coatings |
CN104086092B (en) * | 2014-06-30 | 2016-06-22 | 华南理工大学 | A kind of Superhydrophilic self-cleaning antifog laminated film and preparation method thereof and application |
CN104231916B (en) * | 2014-09-30 | 2016-08-24 | 东南大学 | A kind of transparent hydrophobic nano coating and spraying preparation method thereof |
US10258046B2 (en) | 2014-11-04 | 2019-04-16 | Allied Bioscience, Inc. | Antimicrobial coatings comprising quaternary silanes |
US10993441B2 (en) | 2014-11-04 | 2021-05-04 | Allied Bioscience, Inc. | Antimicrobial coatings comprising organosilane homopolymers |
US9856360B2 (en) | 2014-11-04 | 2018-01-02 | Allied Bioscience, Inc. | Composition and method to form a self decontaminating surface |
US10980236B2 (en) | 2014-11-04 | 2021-04-20 | Allied Bioscience, Inc. | Broad spectrum antimicrobial coatings comprising combinations of organosilanes |
KR102014006B1 (en) | 2015-02-11 | 2019-08-23 | 얼라이드 바이오사이언스, 인크. | Anti-microbial coating and method to form same |
CN105176425B (en) * | 2015-10-28 | 2017-11-07 | 京东方科技集团股份有限公司 | A kind of sealant composition and preparation method thereof |
WO2017081538A2 (en) * | 2015-11-12 | 2017-05-18 | Garcia Sampayo Rosario | Photovoltaic device assembly that facilitates cleaning and component replacement and improves operating temperature conditions |
CN105810768B (en) * | 2016-04-14 | 2017-11-21 | 珠海格力电器股份有限公司 | Double-glass assembly |
US20180151767A1 (en) * | 2016-11-29 | 2018-05-31 | Christopher Dwight Barnes | Solar panel system |
US10374546B2 (en) | 2017-01-03 | 2019-08-06 | Saudi Arabian Oil Company | Maintaining a solar power module |
US10469027B2 (en) | 2017-01-03 | 2019-11-05 | Saudi Arabian Oil Company | Maintaining a solar power module |
US10396708B2 (en) | 2017-01-03 | 2019-08-27 | Saudi Arabian Oil Company | Maintaining a solar power module |
US10490682B2 (en) * | 2018-03-14 | 2019-11-26 | National Mechanical Group Corp. | Frame-less encapsulated photo-voltaic solar panel supporting solar cell modules encapsulated within multiple layers of optically-transparent epoxy-resin materials |
WO2019212718A1 (en) * | 2018-05-02 | 2019-11-07 | Allied Bioscience, Inc. | Antimicrobial coatings comprising quaternary silanes |
EP3573113B1 (en) * | 2018-05-24 | 2020-04-15 | Solyco Technology GmbH | Photovoltaic module |
DE102018215657B4 (en) * | 2018-09-14 | 2021-07-01 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Mirror panel for a solar power plant as well as a solar power plant |
CN109539105A (en) * | 2018-10-22 | 2019-03-29 | 扬州新思路光电科技有限公司 | LED solar street light |
US11411531B2 (en) | 2019-04-17 | 2022-08-09 | PASCO Ventures LLC | Cleaning method for solar panels |
KR20220066001A (en) | 2019-09-20 | 2022-05-23 | 오엔지씨 에너지 센터 트러스트 | Methods for making efficient and scalable self-cleaning coatings |
US20230025035A1 (en) * | 2019-12-04 | 2023-01-26 | Universiteit Twente | Photovoltaic solar power plant assembly comprising an optical structure for redirecting light |
IT202000001441A1 (en) * | 2020-01-24 | 2021-07-24 | Marco Zani | SOLAR PANEL FOR SIMPLIFIED CLEANING |
CN111883613B (en) * | 2020-07-10 | 2022-04-05 | 上海纳米技术及应用国家工程研究中心有限公司 | Method for preparing fluorine-containing self-cleaning coating on outdoor solar cell panel |
CN112452861B (en) * | 2020-11-04 | 2022-03-25 | 江苏天烁数字科技有限公司 | Artificial intelligence-based ice and snow removal adjusting method and device for photovoltaic cleaning robot |
CN112468081A (en) * | 2020-12-01 | 2021-03-09 | 成都恒云高科科技有限公司 | Solar panel self-cleaning device |
CN112500747A (en) * | 2020-12-02 | 2021-03-16 | 江苏诺米新材料科技有限公司 | Self-cleaning weather-resistant fluorocarbon aluminum veneer and preparation method thereof |
CN112708345A (en) * | 2021-01-21 | 2021-04-27 | 蒋勇 | Nano self-cleaning antibacterial coating and preparation process thereof |
US11063556B1 (en) * | 2021-03-24 | 2021-07-13 | 8Me Nova, Llc | Systems and methods for improved bifacial solar modeling |
CN113061357B (en) * | 2021-03-25 | 2022-06-03 | 三峡大学 | Anti-reflection hydrophobic coating and preparation method thereof |
CN115260922B (en) * | 2022-08-01 | 2023-10-31 | 晶科能源股份有限公司 | Adhesive film and photovoltaic module |
CN115889400B (en) * | 2022-09-26 | 2024-05-31 | 华南师范大学 | Method for degrading PET plastic by photocatalysis |
US20240162851A1 (en) * | 2022-11-14 | 2024-05-16 | Season Energy Technology Co., Ltd. | Sun-Tracking Solar Power Generating Apparatus and the Solar Panel Thereof |
WO2024121695A1 (en) * | 2022-12-06 | 2024-06-13 | Thrace Nonwovens & Geosynthetics S.A. | Groundcover for enhancement of albedo effect |
CN117025076B (en) * | 2023-09-11 | 2024-01-30 | 天津大学 | Self-cleaning anti-reflection nano film and preparation method thereof |
Citations (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2984775A (en) * | 1958-07-09 | 1961-05-16 | Hoffman Electronics Corp | Ruggedized solar cell and process for making the same or the like |
US3005862A (en) * | 1958-09-15 | 1961-10-24 | Int Rectifier Corp | Solar battery mounting means |
US3046324A (en) * | 1961-01-16 | 1962-07-24 | Hoffman Electronics Corp | Alloyed photovoltaic cell and method of making the same |
US3976508A (en) * | 1974-11-01 | 1976-08-24 | Mobil Tyco Solar Energy Corporation | Tubular solar cell devices |
US3990914A (en) * | 1974-09-03 | 1976-11-09 | Sensor Technology, Inc. | Tubular solar cell |
US4020827A (en) * | 1975-08-20 | 1977-05-03 | Paul D. Harrigan | Solar energy collecting system |
US4078944A (en) * | 1975-09-08 | 1978-03-14 | Mobil Tyco Solar Energy Corporation | Encapsulated solar cell assembly |
US4113531A (en) * | 1976-10-26 | 1978-09-12 | Hughes Aircraft Company | Process for fabricating polycrystalline inp-cds solar cells |
US4217148A (en) * | 1979-06-18 | 1980-08-12 | Rca Corporation | Compensated amorphous silicon solar cell |
US4249520A (en) * | 1978-12-26 | 1981-02-10 | Orillion Alfred G | Pyramidal energy collector system |
US4282394A (en) * | 1979-10-24 | 1981-08-04 | The Boeing Company | Underwing reflector solar array |
US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
US4686323A (en) * | 1986-06-30 | 1987-08-11 | The Standard Oil Company | Multiple cell, two terminal photovoltaic device employing conductively adhered cells |
US4783373A (en) * | 1986-04-18 | 1988-11-08 | Optical Coating Laboratory, Inc. | Article with thin film coating having an enhanced emissivity and reduced absorption of radiant energy |
US4913744A (en) * | 1987-01-13 | 1990-04-03 | Helmut Hoegl | Solar cell arrangement |
US5216551A (en) * | 1990-02-16 | 1993-06-01 | Asahi Kogaku Kogyo K.K. | Surface reflector |
US5344496A (en) * | 1992-11-16 | 1994-09-06 | General Dynamics Corporation, Space Systems Division | Lightweight solar concentrator cell array |
US5437736A (en) * | 1994-02-15 | 1995-08-01 | Cole; Eric D. | Semiconductor fiber solar cells and modules |
US5538563A (en) * | 1995-02-03 | 1996-07-23 | Finkl; Anthony W. | Solar energy concentrator apparatus for bifacial photovoltaic cells |
US5902416A (en) * | 1993-08-27 | 1999-05-11 | Twin Solar-Technik Entwicklungs-Gmbh | Element of a photovoltaic solar cell and a process for the production thereof as well as the arrangement thereof in a solar cell |
US5990413A (en) * | 1996-06-19 | 1999-11-23 | Ortabasi; Ugur | Bifacial lightweight array for solar power |
US6013372A (en) * | 1995-03-20 | 2000-01-11 | Toto, Ltd. | Method for photocatalytically rendering a surface of a substrate superhydrophilic, a substrate with superhydrophilic photocatalytic surface, and method of making thereof |
US6034319A (en) * | 1998-07-30 | 2000-03-07 | Falbel; Gerald | Immersed photovoltaic solar power system |
US6107564A (en) * | 1997-11-18 | 2000-08-22 | Deposition Sciences, Inc. | Solar cell cover and coating |
US6165256A (en) * | 1996-07-19 | 2000-12-26 | Toto Ltd. | Photocatalytically hydrophilifiable coating composition |
US6217999B1 (en) * | 1997-12-26 | 2001-04-17 | Nihon Yamamura Glass Co., Ltd. | Photochemical reactor element containing microcapsulated titanium dioxide photocatalyst |
US6238738B1 (en) * | 1996-08-13 | 2001-05-29 | Libbey-Owens-Ford Co. | Method for depositing titanium oxide coatings on flat glass |
US6258620B1 (en) * | 1997-10-15 | 2001-07-10 | University Of South Florida | Method of manufacturing CIGS photovoltaic devices |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
US20010021110A1 (en) * | 2000-01-17 | 2001-09-13 | Naoki Nakayama | Reflector, method for the production of reflector, and internal-lighting display device |
US6291762B1 (en) * | 1999-12-08 | 2001-09-18 | Industrial Technology Research Institute | Dust-proof and weather resistant photovoltaic module and fabricating method thereof |
US6294723B2 (en) * | 1998-02-26 | 2001-09-25 | Hitachi, Ltd. | Photovoltaic device, photovoltaic module and establishing method of photovoltaic system |
US6303229B2 (en) * | 1998-04-10 | 2001-10-16 | Matsushita Electric Works, Ltd. | Hydrophilic inorganic coating film and composition made from alkoxysilane and silica |
US6337129B1 (en) * | 1997-06-02 | 2002-01-08 | Toto Ltd. | Antifouling member and antifouling coating composition |
US20020012779A1 (en) * | 2000-05-11 | 2002-01-31 | Ichikoh Industries, Ltd. | Visible light response type phptocatalyst |
US6352758B1 (en) * | 1998-05-04 | 2002-03-05 | 3M Innovative Properties Company | Patterned article having alternating hydrophilic and hydrophobic surface regions |
US6355873B1 (en) * | 2000-06-21 | 2002-03-12 | Ball Semiconductor, Inc. | Spherical shaped solar cell fabrication and panel assembly |
US6359210B2 (en) * | 1998-05-28 | 2002-03-19 | Tecstar Power System, Inc. | Solar cell having an integral monolithically grown bypass diode |
US6410843B1 (en) * | 1999-11-22 | 2002-06-25 | Sanyo Electric Co., Ltd. | Solar cell module |
US6413581B1 (en) * | 1997-03-14 | 2002-07-02 | Ppg Industries Ohio, Inc. | Photocatalytically-activated self-cleaning article and method of making same |
US6447123B2 (en) * | 1999-06-25 | 2002-09-10 | Gentex Corporation | Electrochromic device having a self-cleaning hydrophilic coating |
US20020130311A1 (en) * | 2000-08-22 | 2002-09-19 | Lieber Charles M. | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
US6455465B1 (en) * | 1998-08-18 | 2002-09-24 | Fuji Kihan Co., Ltd. | Photocatalyst coated products and a method for producing a photocatalyst layer |
US20020180909A1 (en) * | 2001-03-26 | 2002-12-05 | Lubart Neil D. | Device having reflective and transmissive properties |
US6524664B1 (en) * | 1996-03-21 | 2003-02-25 | Toto Ltd. | Photocatalytically hydrophilifying and hydrophobifying material |
US6537379B1 (en) * | 2000-01-13 | 2003-03-25 | Hrl Laboratories, Llc | Photocatalytic coating and method for cleaning spacecraft surfaces |
US6548751B2 (en) * | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
US6555739B2 (en) * | 2001-09-10 | 2003-04-29 | Ekla-Tek, Llc | Photovoltaic array and method of manufacturing same |
US6569520B1 (en) * | 2000-03-21 | 2003-05-27 | 3M Innovative Properties Company | Photocatalytic composition and method for preventing algae growth on building materials |
US20030121544A1 (en) * | 2000-03-02 | 2003-07-03 | Nippon Sheet Glass Co., Ltd. | Photoelectric conversion device |
US6645569B2 (en) * | 2001-01-30 | 2003-11-11 | The Procter & Gamble Company | Method of applying nanoparticles |
US6673433B1 (en) * | 1998-10-19 | 2004-01-06 | Toto Ltd. | Stainproof material and method for manufacturing the same, and coating composition and apparatus thereof |
US6679978B2 (en) * | 2002-02-22 | 2004-01-20 | Afg Industries, Inc. | Method of making self-cleaning substrates |
US6680040B1 (en) * | 1998-12-21 | 2004-01-20 | Catalysts & Chemicals Industries Co., Ltd. | Sol having fine particles dispersed and method for preparing |
US6680135B2 (en) * | 1995-09-15 | 2004-01-20 | Saint-Gobain Glass France | Substrate with a photocatalytic coating |
US6692794B2 (en) * | 2000-10-03 | 2004-02-17 | Murakami Corporation | Composite and manufacturing method therefor |
US6706959B2 (en) * | 2000-11-24 | 2004-03-16 | Clean Venture 21 Corporation | Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles |
US6706963B2 (en) * | 2002-01-25 | 2004-03-16 | Konarka Technologies, Inc. | Photovoltaic cell interconnection |
US20040063320A1 (en) * | 2002-09-30 | 2004-04-01 | Hollars Dennis R. | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US6716513B1 (en) * | 1999-03-09 | 2004-04-06 | Toto Ltd. | Hydrophilic member, method for preparation thereof, and coating agent and apparatus for preparation thereof |
US6762359B2 (en) * | 2001-01-15 | 2004-07-13 | Fuji Machine Mfg. Co., Ltd. | Photovoltaic panel and method of producing same |
US6777091B2 (en) * | 2000-03-22 | 2004-08-17 | Nippon Sheet Glass Co., Ltd. | Substrate with photocatalytic film and method for producing the same |
US6806414B2 (en) * | 2001-05-09 | 2004-10-19 | Canon Kabushiki Kaisha | Photovoltaic elements |
US6811884B2 (en) * | 2002-12-24 | 2004-11-02 | Ppg Industries Ohio, Inc. | Water repellant surface treatment and treated articles |
US6816297B1 (en) * | 1999-06-25 | 2004-11-09 | Gentex Corporation | Electrochromic mirror having a self-cleaning hydrophilic coating |
US6830785B1 (en) * | 1995-03-20 | 2004-12-14 | Toto Ltd. | Method for photocatalytically rendering a surface of a substrate superhydrophilic, a substrate with a superhydrophilic photocatalytic surface, and method of making thereof |
US6840061B1 (en) * | 1999-06-08 | 2005-01-11 | Libbey-Owens-Ford Co. | Coatings on substrates |
US6846512B2 (en) * | 2001-01-30 | 2005-01-25 | The Procter & Gamble Company | System and method for cleaning and/or treating vehicles and the surfaces of other objects |
US20050040374A1 (en) * | 2002-01-25 | 2005-02-24 | Konarka Technologies, Inc. | Photovoltaic fibers |
US20050049158A1 (en) * | 2003-08-29 | 2005-03-03 | Cai Ru Xiong | Coating surface |
US6866937B2 (en) * | 2000-08-22 | 2005-03-15 | Central Glass Company, Limited | Glass plate with oxide film and process for producing same |
US6881505B2 (en) * | 1998-03-20 | 2005-04-19 | Glaverbel | Coated substrate with high reflectance |
US6884753B2 (en) * | 2002-05-27 | 2005-04-26 | Sumitomo Chemical Company, Limited | Method for producing ceramic dispersion composition |
US6890645B2 (en) * | 2000-06-21 | 2005-05-10 | Fuji Photo Film B.V. | Photocatalytic sheet or film and its manufacturing process |
US20050098202A1 (en) * | 2003-11-10 | 2005-05-12 | Maltby Robert E.Jr. | Non-planar photocell |
US6902653B2 (en) * | 1999-11-22 | 2005-06-07 | Titan Technologies | Apparatus and method for photocatalytic purification and disinfection of fluids |
US20050139256A1 (en) * | 2003-12-31 | 2005-06-30 | Korman Charles S. | Solar cell assembly for use in an outer space environment or a non-earth environment |
US6921579B2 (en) * | 2000-09-11 | 2005-07-26 | Cardinal Cg Company | Temporary protective covers |
US6929862B2 (en) * | 1999-06-08 | 2005-08-16 | Libbey-Owens-Ford Co. | Coated substrates |
US6940008B2 (en) * | 1998-02-05 | 2005-09-06 | Canon Kabushiki Kaisha | Semiconductor device, solar cell module, and methods for their dismantlement |
US6971948B2 (en) * | 2001-02-08 | 2005-12-06 | Cardinal Cg Company | Method and apparatus for removing coatings applied to surfaces of a substrate |
US6974611B2 (en) * | 2002-06-25 | 2005-12-13 | Sumitomo Chemical Company, Limited | Titanium oxide dispersion composition, and method and container for preserving the same |
US7025716B1 (en) * | 1996-09-23 | 2006-04-11 | Novoste Corporation | Intraluminal radiation treatment system |
US20060086384A1 (en) * | 2002-06-21 | 2006-04-27 | Josuke Nakata | Light receiving or light emitting device and itsd production method |
US20060185714A1 (en) * | 2005-02-05 | 2006-08-24 | Samsung Electronics Co., Ltd. | Flexible solar cell and method of producing the same |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2327643A1 (en) | 1975-10-09 | 1977-05-06 | Commissariat Energie Atomique | Solar photoelectric converter using silicon photodiode rod - has cylindrical PN:junction between cylindrical lens and reflector |
DE3209548A1 (en) | 1982-03-16 | 1983-10-20 | Siemens AG, 1000 Berlin und 8000 München | Solar cell arrangement in thin-layer construction made from semiconductor material, and process for the fabrication thereof |
JPS59125670A (en) | 1983-01-06 | 1984-07-20 | Toppan Printing Co Ltd | Solar battery |
JPS59143377A (en) | 1983-02-05 | 1984-08-16 | Toyobo Co Ltd | Thread type solar battery |
JPS59144177A (en) | 1983-02-07 | 1984-08-18 | Seiko Epson Corp | Solar battery |
WO1984004425A1 (en) | 1983-04-25 | 1984-11-08 | Inst Microtechnique De L Unive | Large surface photovoltaic cell and production method thereof |
US5455465A (en) * | 1993-11-04 | 1995-10-03 | Alcatel Canada, Inc. | Rapid transit car electrical coupling apparatus and method |
DE4339547A1 (en) | 1993-11-19 | 1995-05-24 | Twin Solar Technik Entwicklung | Photovoltaic electricity generation by solar cells |
DE4343514A1 (en) | 1993-12-20 | 1995-06-22 | Peter Pelz | Roof or wall element fitted with solar module |
DE4406760A1 (en) | 1994-03-02 | 1995-09-07 | Twin Solar Technik Entwicklung | Transparent photovoltaic solar cell module |
EP0869156B1 (en) | 1995-12-22 | 2003-10-15 | Toto Ltd. | Photocatalytic process for making surface hydrophilic and composite material having photocatalytically hydrophilic surface |
JPH10212809A (en) | 1997-01-30 | 1998-08-11 | Toto Ltd | Building material for external wall |
FR2766494B1 (en) | 1997-07-22 | 2003-09-26 | Rhodia Chimie Sa | DISPERSION OF TITANIUM PARTICLES COMPRISING A POLYORGANOSILOXANE-BASED BINDER |
DE19732876A1 (en) | 1997-07-30 | 1999-02-04 | Reitstall Icking Gmbh | Photovoltaic solar energy module |
AUPR174800A0 (en) | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
EP1219860B1 (en) * | 2000-12-28 | 2010-03-03 | Bosch Transmission Technology b.v. | Belt |
US20040023253A1 (en) | 2001-06-11 | 2004-02-05 | Sandeep Kunwar | Device structure for closely spaced electrodes |
US7169669B2 (en) | 2001-12-04 | 2007-01-30 | Origin Energy Solar Pty. Ltd. | Method of making thin silicon sheets for solar cells |
AU2003902270A0 (en) | 2003-05-09 | 2003-05-29 | Origin Energy Solar Pty Ltd | Separating and assembling semiconductor strips |
EP1521308A1 (en) | 2003-10-02 | 2005-04-06 | Scheuten Glasgroep | Ball or grain-shaped semiconductor element to be used in solar cells and method of production; method of production of a solar cell with said semiconductor element and solar cell |
WO2005056870A1 (en) | 2003-12-09 | 2005-06-23 | Asahi Glass Company, Limited | Ti OXIDE FILM EXHIBITING PHOTOCATALYTIC ACTIVITY UPON VISIBLE LIGHT IRRADIATION AND PROCESS FOR PRODUCING THE SAME |
EP1711967A1 (en) | 2004-01-23 | 2006-10-18 | Origin Energy Solar Pty Ltd. | Solar panel |
JP5219512B2 (en) | 2004-08-09 | 2013-06-26 | トランスフォーム・ソーラー・ピーティーワイ・リミテッド | Solar cell (elongated small piece) submodule structure |
-
2005
- 2005-12-21 US US11/315,523 patent/US8344238B2/en not_active Expired - Fee Related
-
2006
- 2006-07-19 WO PCT/US2006/028103 patent/WO2007012026A1/en active Application Filing
-
2010
- 2010-09-02 US US12/875,059 patent/US20100326495A1/en not_active Abandoned
- 2010-09-11 US US12/880,098 patent/US20110000539A1/en not_active Abandoned
Patent Citations (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2984775A (en) * | 1958-07-09 | 1961-05-16 | Hoffman Electronics Corp | Ruggedized solar cell and process for making the same or the like |
US3005862A (en) * | 1958-09-15 | 1961-10-24 | Int Rectifier Corp | Solar battery mounting means |
US3046324A (en) * | 1961-01-16 | 1962-07-24 | Hoffman Electronics Corp | Alloyed photovoltaic cell and method of making the same |
US3990914A (en) * | 1974-09-03 | 1976-11-09 | Sensor Technology, Inc. | Tubular solar cell |
US3976508A (en) * | 1974-11-01 | 1976-08-24 | Mobil Tyco Solar Energy Corporation | Tubular solar cell devices |
US4020827A (en) * | 1975-08-20 | 1977-05-03 | Paul D. Harrigan | Solar energy collecting system |
US4078944A (en) * | 1975-09-08 | 1978-03-14 | Mobil Tyco Solar Energy Corporation | Encapsulated solar cell assembly |
US4113531A (en) * | 1976-10-26 | 1978-09-12 | Hughes Aircraft Company | Process for fabricating polycrystalline inp-cds solar cells |
US4249520A (en) * | 1978-12-26 | 1981-02-10 | Orillion Alfred G | Pyramidal energy collector system |
US4217148A (en) * | 1979-06-18 | 1980-08-12 | Rca Corporation | Compensated amorphous silicon solar cell |
US4282394A (en) * | 1979-10-24 | 1981-08-04 | The Boeing Company | Underwing reflector solar array |
US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
US4783373A (en) * | 1986-04-18 | 1988-11-08 | Optical Coating Laboratory, Inc. | Article with thin film coating having an enhanced emissivity and reduced absorption of radiant energy |
US4686323A (en) * | 1986-06-30 | 1987-08-11 | The Standard Oil Company | Multiple cell, two terminal photovoltaic device employing conductively adhered cells |
US4913744A (en) * | 1987-01-13 | 1990-04-03 | Helmut Hoegl | Solar cell arrangement |
US5216551A (en) * | 1990-02-16 | 1993-06-01 | Asahi Kogaku Kogyo K.K. | Surface reflector |
US5344496A (en) * | 1992-11-16 | 1994-09-06 | General Dynamics Corporation, Space Systems Division | Lightweight solar concentrator cell array |
US5902416A (en) * | 1993-08-27 | 1999-05-11 | Twin Solar-Technik Entwicklungs-Gmbh | Element of a photovoltaic solar cell and a process for the production thereof as well as the arrangement thereof in a solar cell |
US5437736A (en) * | 1994-02-15 | 1995-08-01 | Cole; Eric D. | Semiconductor fiber solar cells and modules |
US5538563A (en) * | 1995-02-03 | 1996-07-23 | Finkl; Anthony W. | Solar energy concentrator apparatus for bifacial photovoltaic cells |
US6830785B1 (en) * | 1995-03-20 | 2004-12-14 | Toto Ltd. | Method for photocatalytically rendering a surface of a substrate superhydrophilic, a substrate with a superhydrophilic photocatalytic surface, and method of making thereof |
US6013372A (en) * | 1995-03-20 | 2000-01-11 | Toto, Ltd. | Method for photocatalytically rendering a surface of a substrate superhydrophilic, a substrate with superhydrophilic photocatalytic surface, and method of making thereof |
US6680135B2 (en) * | 1995-09-15 | 2004-01-20 | Saint-Gobain Glass France | Substrate with a photocatalytic coating |
US6846556B2 (en) * | 1995-09-15 | 2005-01-25 | Saint-Gobain Glass France | Substrate with a photocatalytic coating |
US6524664B1 (en) * | 1996-03-21 | 2003-02-25 | Toto Ltd. | Photocatalytically hydrophilifying and hydrophobifying material |
US5990413A (en) * | 1996-06-19 | 1999-11-23 | Ortabasi; Ugur | Bifacial lightweight array for solar power |
US6165256A (en) * | 1996-07-19 | 2000-12-26 | Toto Ltd. | Photocatalytically hydrophilifiable coating composition |
US6238738B1 (en) * | 1996-08-13 | 2001-05-29 | Libbey-Owens-Ford Co. | Method for depositing titanium oxide coatings on flat glass |
US7025716B1 (en) * | 1996-09-23 | 2006-04-11 | Novoste Corporation | Intraluminal radiation treatment system |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
US6413581B1 (en) * | 1997-03-14 | 2002-07-02 | Ppg Industries Ohio, Inc. | Photocatalytically-activated self-cleaning article and method of making same |
US6337129B1 (en) * | 1997-06-02 | 2002-01-08 | Toto Ltd. | Antifouling member and antifouling coating composition |
US6258620B1 (en) * | 1997-10-15 | 2001-07-10 | University Of South Florida | Method of manufacturing CIGS photovoltaic devices |
US6107564A (en) * | 1997-11-18 | 2000-08-22 | Deposition Sciences, Inc. | Solar cell cover and coating |
US6217999B1 (en) * | 1997-12-26 | 2001-04-17 | Nihon Yamamura Glass Co., Ltd. | Photochemical reactor element containing microcapsulated titanium dioxide photocatalyst |
US6940008B2 (en) * | 1998-02-05 | 2005-09-06 | Canon Kabushiki Kaisha | Semiconductor device, solar cell module, and methods for their dismantlement |
US6294723B2 (en) * | 1998-02-26 | 2001-09-25 | Hitachi, Ltd. | Photovoltaic device, photovoltaic module and establishing method of photovoltaic system |
US6881505B2 (en) * | 1998-03-20 | 2005-04-19 | Glaverbel | Coated substrate with high reflectance |
US6303229B2 (en) * | 1998-04-10 | 2001-10-16 | Matsushita Electric Works, Ltd. | Hydrophilic inorganic coating film and composition made from alkoxysilane and silica |
US6352758B1 (en) * | 1998-05-04 | 2002-03-05 | 3M Innovative Properties Company | Patterned article having alternating hydrophilic and hydrophobic surface regions |
US6359210B2 (en) * | 1998-05-28 | 2002-03-19 | Tecstar Power System, Inc. | Solar cell having an integral monolithically grown bypass diode |
US6034319A (en) * | 1998-07-30 | 2000-03-07 | Falbel; Gerald | Immersed photovoltaic solar power system |
US6455465B1 (en) * | 1998-08-18 | 2002-09-24 | Fuji Kihan Co., Ltd. | Photocatalyst coated products and a method for producing a photocatalyst layer |
US6673433B1 (en) * | 1998-10-19 | 2004-01-06 | Toto Ltd. | Stainproof material and method for manufacturing the same, and coating composition and apparatus thereof |
US6680040B1 (en) * | 1998-12-21 | 2004-01-20 | Catalysts & Chemicals Industries Co., Ltd. | Sol having fine particles dispersed and method for preparing |
US6716513B1 (en) * | 1999-03-09 | 2004-04-06 | Toto Ltd. | Hydrophilic member, method for preparation thereof, and coating agent and apparatus for preparation thereof |
US6840061B1 (en) * | 1999-06-08 | 2005-01-11 | Libbey-Owens-Ford Co. | Coatings on substrates |
US6929862B2 (en) * | 1999-06-08 | 2005-08-16 | Libbey-Owens-Ford Co. | Coated substrates |
US6816297B1 (en) * | 1999-06-25 | 2004-11-09 | Gentex Corporation | Electrochromic mirror having a self-cleaning hydrophilic coating |
US6447123B2 (en) * | 1999-06-25 | 2002-09-10 | Gentex Corporation | Electrochromic device having a self-cleaning hydrophilic coating |
US6902653B2 (en) * | 1999-11-22 | 2005-06-07 | Titan Technologies | Apparatus and method for photocatalytic purification and disinfection of fluids |
US6410843B1 (en) * | 1999-11-22 | 2002-06-25 | Sanyo Electric Co., Ltd. | Solar cell module |
US6291762B1 (en) * | 1999-12-08 | 2001-09-18 | Industrial Technology Research Institute | Dust-proof and weather resistant photovoltaic module and fabricating method thereof |
US6537379B1 (en) * | 2000-01-13 | 2003-03-25 | Hrl Laboratories, Llc | Photocatalytic coating and method for cleaning spacecraft surfaces |
US20010021110A1 (en) * | 2000-01-17 | 2001-09-13 | Naoki Nakayama | Reflector, method for the production of reflector, and internal-lighting display device |
US20030121544A1 (en) * | 2000-03-02 | 2003-07-03 | Nippon Sheet Glass Co., Ltd. | Photoelectric conversion device |
US6569520B1 (en) * | 2000-03-21 | 2003-05-27 | 3M Innovative Properties Company | Photocatalytic composition and method for preventing algae growth on building materials |
US6881701B2 (en) * | 2000-03-21 | 2005-04-19 | 3M Innovative Properties Company | Photocatalytic composition and method for preventing algae growth on building materials |
US6777091B2 (en) * | 2000-03-22 | 2004-08-17 | Nippon Sheet Glass Co., Ltd. | Substrate with photocatalytic film and method for producing the same |
US20020012779A1 (en) * | 2000-05-11 | 2002-01-31 | Ichikoh Industries, Ltd. | Visible light response type phptocatalyst |
US6890645B2 (en) * | 2000-06-21 | 2005-05-10 | Fuji Photo Film B.V. | Photocatalytic sheet or film and its manufacturing process |
US6355873B1 (en) * | 2000-06-21 | 2002-03-12 | Ball Semiconductor, Inc. | Spherical shaped solar cell fabrication and panel assembly |
US6866937B2 (en) * | 2000-08-22 | 2005-03-15 | Central Glass Company, Limited | Glass plate with oxide film and process for producing same |
US20020130311A1 (en) * | 2000-08-22 | 2002-09-19 | Lieber Charles M. | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
US6921579B2 (en) * | 2000-09-11 | 2005-07-26 | Cardinal Cg Company | Temporary protective covers |
US6692794B2 (en) * | 2000-10-03 | 2004-02-17 | Murakami Corporation | Composite and manufacturing method therefor |
US6706959B2 (en) * | 2000-11-24 | 2004-03-16 | Clean Venture 21 Corporation | Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles |
US6548751B2 (en) * | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
US6762359B2 (en) * | 2001-01-15 | 2004-07-13 | Fuji Machine Mfg. Co., Ltd. | Photovoltaic panel and method of producing same |
US6846512B2 (en) * | 2001-01-30 | 2005-01-25 | The Procter & Gamble Company | System and method for cleaning and/or treating vehicles and the surfaces of other objects |
US6863933B2 (en) * | 2001-01-30 | 2005-03-08 | The Procter And Gamble Company | Method of hydrophilizing materials |
US6645569B2 (en) * | 2001-01-30 | 2003-11-11 | The Procter & Gamble Company | Method of applying nanoparticles |
US6872444B2 (en) * | 2001-01-30 | 2005-03-29 | The Procter & Gamble Company | Enhancement of color on surfaces |
US6971948B2 (en) * | 2001-02-08 | 2005-12-06 | Cardinal Cg Company | Method and apparatus for removing coatings applied to surfaces of a substrate |
US20020180909A1 (en) * | 2001-03-26 | 2002-12-05 | Lubart Neil D. | Device having reflective and transmissive properties |
US6806414B2 (en) * | 2001-05-09 | 2004-10-19 | Canon Kabushiki Kaisha | Photovoltaic elements |
US6555739B2 (en) * | 2001-09-10 | 2003-04-29 | Ekla-Tek, Llc | Photovoltaic array and method of manufacturing same |
US6706963B2 (en) * | 2002-01-25 | 2004-03-16 | Konarka Technologies, Inc. | Photovoltaic cell interconnection |
US20050040374A1 (en) * | 2002-01-25 | 2005-02-24 | Konarka Technologies, Inc. | Photovoltaic fibers |
US6679978B2 (en) * | 2002-02-22 | 2004-01-20 | Afg Industries, Inc. | Method of making self-cleaning substrates |
US6884753B2 (en) * | 2002-05-27 | 2005-04-26 | Sumitomo Chemical Company, Limited | Method for producing ceramic dispersion composition |
US20060086384A1 (en) * | 2002-06-21 | 2006-04-27 | Josuke Nakata | Light receiving or light emitting device and itsd production method |
US6974611B2 (en) * | 2002-06-25 | 2005-12-13 | Sumitomo Chemical Company, Limited | Titanium oxide dispersion composition, and method and container for preserving the same |
US20040063320A1 (en) * | 2002-09-30 | 2004-04-01 | Hollars Dennis R. | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US6811884B2 (en) * | 2002-12-24 | 2004-11-02 | Ppg Industries Ohio, Inc. | Water repellant surface treatment and treated articles |
US20050049158A1 (en) * | 2003-08-29 | 2005-03-03 | Cai Ru Xiong | Coating surface |
US20050098202A1 (en) * | 2003-11-10 | 2005-05-12 | Maltby Robert E.Jr. | Non-planar photocell |
US20050139256A1 (en) * | 2003-12-31 | 2005-06-30 | Korman Charles S. | Solar cell assembly for use in an outer space environment or a non-earth environment |
US20060185714A1 (en) * | 2005-02-05 | 2006-08-24 | Samsung Electronics Co., Ltd. | Flexible solar cell and method of producing the same |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110209746A1 (en) * | 2009-09-06 | 2011-09-01 | Hanzhong Zhang | Tubular Photovoltaic Device and Method of Making |
US20130041083A1 (en) * | 2010-04-30 | 2013-02-14 | Battelle Memorial Institute | Composition for easy to clean surfaces |
US8871845B2 (en) * | 2010-04-30 | 2014-10-28 | Battelle Memorial Institute | Composition for easy to clean surfaces |
CN104804365A (en) * | 2015-04-28 | 2015-07-29 | 上海锦湖日丽塑料有限公司 | Low-emission self-cleaning ABS (acrylonitrile butadiene styrene) and preparation method thereof |
US9654053B2 (en) | 2015-09-01 | 2017-05-16 | Sun Energy, Inc. | Solar module support structure |
CN107285352A (en) * | 2017-06-13 | 2017-10-24 | 深圳市雄韬电源科技股份有限公司 | The preparation method and applications of nano aluminium oxide |
CN110079223A (en) * | 2019-05-15 | 2019-08-02 | 王崧 | It is a kind of it is high adherency, low permeable photovoltaic cell component packaging EVA adhesive film |
CN110346543A (en) * | 2019-06-04 | 2019-10-18 | 浙江和谐光催化科技有限公司 | A kind of photocatalytic self-cleaning coating function method used for building exterior wall |
CN111334100A (en) * | 2020-03-16 | 2020-06-26 | 日升运维河北新能源有限公司 | Super-hydrophilic coating agent for front side of photovoltaic module, preparation method and application method |
Also Published As
Publication number | Publication date |
---|---|
WO2007012026A1 (en) | 2007-01-25 |
US8344238B2 (en) | 2013-01-01 |
US20110000539A1 (en) | 2011-01-06 |
US20070017567A1 (en) | 2007-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8344238B2 (en) | Self-cleaning protective coatings for use with photovoltaic cells | |
US7947893B2 (en) | Solar cell and solar cell module | |
Mendes et al. | Broadband light trapping in thin film solar cells with self-organized plasmonic nano-colloids | |
US20140313574A1 (en) | Nanoparticle films for use as solar cell back reflectors and other applications | |
JP5125169B2 (en) | Photovoltaic device | |
Khang | Recent progress in Si-PEDOT: PSS inorganic–organic hybrid solar cells | |
US9343609B2 (en) | Mesoscopic optoelectronic devices comprising arrays of semiconductor pillars deposited from a suspension and production method thereof | |
EP2728623B1 (en) | Thin film solar cell and method for manufacturing same | |
US20160293781A1 (en) | Three dimensional anti-reflection nanocone film | |
KR101140731B1 (en) | See-through type photovoltaic module including 3-dimensional photonic crystal, manufacturing method thereof, and insulating glass including the same | |
CN101459201A (en) | Solar battery and method for manufacturing the same | |
CN112582543A (en) | Perovskite solar cell | |
KR102293742B1 (en) | Protective film for Solar Cell and preparation method thereof | |
Deshpande et al. | Review of hybrid solar cells based on CdSe and TiO2 materials | |
Vargas-Bernal | Nanocoatings for Energy Generation and Conservation of Solar Cells | |
EP1362379A2 (en) | Semiconductor device and method for producing the same | |
KR101976918B1 (en) | Lossless Photovoltaic System using Patterned Array and Method of Manufacturing thereof | |
KR102582124B1 (en) | Solar cell and fabrication method thereof | |
KR101628957B1 (en) | Patterned grid electrode and thin film solar cell using the same, and a method of manufacturing them | |
US11950436B2 (en) | All-back-contact photovoltaic devices using cracked film lithography | |
Pathirane | Flexible 3-Dimensional Hybrid ZnO Nanowire/a-Si: H Thin-Film Solar Cells | |
Farah Khaleda | Synthesis and characterization of hybrid organic coating system to reduce thermal degradation of solar cells/Farah Khaleda Mohd Zaini | |
Zaini | Synthesis and Characterization of Hybrid Organic Coating System to Reduce Thermal Degradation of Solar Cells | |
Kim et al. | Efficiency improvement of flexible Cu (In, Ga) Se 2 solar cells by integrating a micro-prism array transferred to soft-polydimethylsiloxane | |
WO2013182352A2 (en) | Solar module and method for the production thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SOLYNDRA LLC, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SOLYNDRA, INC.;REEL/FRAME:025847/0962 Effective date: 20110223 |
|
AS | Assignment |
Owner name: U.S. BANK NATIONAL ASSOCIATION, NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNOR:SOLYNDRA LLC (FORMERLY KNOWN AS SOLYNDRA FAB 2 LLC);REEL/FRAME:025881/0712 Effective date: 20110223 |
|
AS | Assignment |
Owner name: U.S. BANK NATIONAL ASSOCIATION, NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNOR:SOLYNDRA LLC;REEL/FRAME:025919/0070 Effective date: 20110223 |
|
AS | Assignment |
Owner name: SOLYNDRA RESIDUAL TRUST, CALIFORNIA Free format text: ORDER CONFIRMING DEBTOR'S AMENDED JOINT CHAPTER 11 PLAN;ASSIGNOR:SOLYNDRA LLC;REEL/FRAME:031424/0748 Effective date: 20121022 Owner name: SOLYNDRA RESIDUAL TRUST, CALIFORNIA Free format text: BANKRUPTCY COURT/ORDER CONFIRMING DEBTORS' AMENDED JOINT CHAPTER 11 PLAN;ASSIGNOR:SOLYNDRA LLC;REEL/FRAME:031693/0147 Effective date: 20121022 |
|
AS | Assignment |
Owner name: SOLYNDRA RESIDUAL TRUST, CALIFORNIA Free format text: ORDER CONFIRMING DEBTOR'S AMENDED JOINT CHAPTER 11 PLAN;ASSIGNOR:SOLYNDRA LLC;REEL/FRAME:031448/0645 Effective date: 20121022 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |