JPS59143377A - Thread type solar battery - Google Patents
Thread type solar batteryInfo
- Publication number
- JPS59143377A JPS59143377A JP58017768A JP1776883A JPS59143377A JP S59143377 A JPS59143377 A JP S59143377A JP 58017768 A JP58017768 A JP 58017768A JP 1776883 A JP1776883 A JP 1776883A JP S59143377 A JPS59143377 A JP S59143377A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- solar cell
- filament
- filamentous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000013461 design Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 3
- 229910014299 N-Si Inorganic materials 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 238000009941 weaving Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 42
- 239000010408 film Substances 0.000 description 20
- 239000004744 fabric Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229920001407 Modal (textile) Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002759 woven fabric Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
この発明は、ドレープ性とデザイン性の優れた布帛を与
え得るフレキシブル性に冨む糸状太陽電池に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a filamentous solar cell that is highly flexible and can provide a fabric with excellent drapability and design.
近年、アモルファスシリコンを用いた太陽電池の開発が
盛んになり、一部実用に供されるまでになっている。ア
モルファスシリコン太陽電池は、アモルファスシリコン
の光の吸収性の大きいことに起因して従来の結晶シリコ
ンや硫化カドミウムに比べ電池本体の厚さが薄くて済む
ことや、その製造が蒸着法でできるための大面積の電池
が容易に得られるなどの利点を有する。たとえば、大面
積のフィルム上にアモルファスシリコンを蒸着して製作
した太１１１１！池は、そのままの大きさで建物の壁面
に貼るという使い方ができるほか、分割して小さなセル
としても使うことができる。この場合、製造コストは従
来法よりも著しく低減される。In recent years, the development of solar cells using amorphous silicon has become active, and some of them have even been put into practical use. Amorphous silicon solar cells require a thinner cell body than conventional crystalline silicon or cadmium sulfide due to the high light absorption of amorphous silicon, and because they can be manufactured using vapor deposition methods. It has the advantage that large-area batteries can be easily obtained. For example, Tai 1111 is manufactured by vapor depositing amorphous silicon on a large-area film! The pond can be used as it is by attaching it to the wall of a building, or it can be divided and used as small cells. In this case, manufacturing costs are significantly reduced compared to conventional methods.
このような大面積の基板は、有機物のフィルムに限らず
、ステンレス板のような金属性でもよい。Such a large-area substrate is not limited to an organic film, but may also be made of metal such as a stainless steel plate.
ところで、基板の厚み、材質などはそれから構成される
太陽電池の７レキシビリテイ〈可撓性）に大きく影響す
るため、用途に応じて適切な基板を選定する必要がある
。特に、フレキシブル性の要求される用途を考える場合
、この基板（基材）の選択が重要となる。Incidentally, the thickness, material, etc. of the substrate greatly affect the flexibility of the solar cell constructed from it, so it is necessary to select an appropriate substrate depending on the application. Particularly when considering applications that require flexibility, the selection of this substrate (base material) is important.
従来、ステンレス板やポリイミドフィルムのような耐熱
性有機フィルムが用いられてきたが、フィルムのフレキ
シビリティは、いわば一方向的であり、二次曲面、たと
えば球面、に拾わせようとすると、固い折れ皺が発生し
て好ましくなかった。Conventionally, heat-resistant organic films such as stainless steel plates and polyimide films have been used, but the flexibility of the film is unidirectional, so if you try to make it pick up on a quadratic curved surface, such as a spherical surface, it will bend hard. Wrinkles were generated, which was not desirable.
また、フィルム上の電気接続がｌｉ線したり、フィルム
を人体に着用するとき違和感が生じたりした。In addition, the electrical connections on the film caused Li wires, and the film caused an uncomfortable feeling when worn on the human body.
また、ステンレス板のＪ：うなものも、到底フレキシブ
ル性の要求される用途には使えなかった。フレキシブル
性の要求される用途としては、たとえば登山、スキー、
釣りなどに着用される衣服を挙げることができるが、そ
の材料そのものを太陽電池にすることができれば、軽量
、大面積がとれるため、種々の用途、たとえば、通信機
の電源、暖房や照明の電源、などへの使用が可能となり
、非常に有用であろう。Furthermore, the stainless steel plate J: Umono could not be used in applications that required flexibility. Applications that require flexibility include mountain climbing, skiing,
One example is clothing worn for fishing, but if the material itself could be made into solar cells, it would be lightweight and occupy a large area, so it could be used for a variety of purposes, such as power sources for communication equipment, power sources for heating and lighting. , etc., and will be very useful.
また、一方では、上述のような太陽電池衣服を身体にフ
ィン１〜させるには、いわゆる太陽電池そのものにドレ
ープ性（形に沿う性質）が備わっていることが必要であ
るが、前述のように、フィルムを基板とした太陽電池で
はフレキシビリティが不足しているので当然ドレープ性
も欠如する。トレー１性を得るためには、ドレープ性の
ある基材上に太陽電池を構成しなければならない。望ま
しい基材は、織物、編物、不織布のような布帛である。On the other hand, in order to attach the fins of solar battery clothing to the body as described above, it is necessary for the so-called solar cells themselves to have drapability (property that follows the shape). Since solar cells using film as a substrate lack flexibility, they naturally lack drapability. In order to obtain tray properties, solar cells must be constructed on a drapeable substrate. Desirable substrates are fabrics such as woven, knitted, and nonwoven fabrics.
これらの布帛上に導電膜を蒸着し、さらにアモルファス
シリコンを蒸着して、フレキシブルな太陽電池を得るこ
とができ、期袖したとおり、フィルム上に構成した太陽
電池より著しくフレキシビリディが向上プるが、衣服と
して着用するにはまだドレープ性が不足していた。なぜ
ならば、導電層およびアモルファスシリコン層の蒸着に
より基布が目詰めされ、基布を構成する糸間の動きが抑
制されるために基布自体が有していたフレキシビリティ
（ドレープ性）がかなりの程度減じられるからである。By depositing a conductive film on these fabrics and then depositing amorphous silicon, flexible solar cells can be obtained, and as expected, the flexibility is significantly improved compared to solar cells constructed on films. However, it still lacked drapability to be worn as clothing. This is because the base fabric is packed by the vapor deposition of the conductive layer and the amorphous silicon layer, and the movement between the threads that make up the base fabric is suppressed, which significantly reduces the flexibility (drapeability) of the base fabric itself. This is because the degree of
この発明は、ドレープ性とデザイン性の優れた布帛を与
え得る、糸状フレキシブル太陽電池に関するもので、前
述の問題点の解決に鋭意努力した結果達成されたもので
ある。The present invention relates to a thread-like flexible solar cell that can provide a fabric with excellent drapability and design, and was achieved as a result of diligent efforts to solve the above-mentioned problems.
すなわち、この発明は、糸状基体にアモルファスシリコ
ンが蒸着されてなる糸状太陽電池を提供するものであり
、これを布帛に成形加工することにより、ドレープ性、
デザイン性などに冨むフレキシブル太陽電池が得られる
ことを見い出したことに基づくものである。That is, the present invention provides a filamentous solar cell in which amorphous silicon is deposited on a filamentous substrate, and by molding this into a fabric, drapability, drapability,
This is based on the discovery that a flexible solar cell with a rich design can be obtained.
この発明に用いられる糸状基体とは、有機または無機材
料より製造されるモノフィラメント、マルチフィラメン
ト、紡績糸などを挙げることができ、その太さは、１０
μｍから３１１ｔｌ、望ましくは１００μＩから１１で
ある。あまりに細いと、太陽電池の電極接合が費１しく
なり、他方あまり太いと、布帛にしたときのドレープ性
が小さくなって望ましくない。糸状基体の断面は通常円
形であるが、楕円、角、その他必要に応じて種々の選択
が可能である。たとえば、フィルムをスリットあるいは
スプリットして製造する扁平な糸状物を用いることがで
きる。このような非円形の糸状体の太さは、長袖の長さ
くａ）と短軸の長さくｂ）より求まる平均値（（ａ ＋
ｂ ）／２）をもって表現で一５＝
きる。糸状基体は有機物でも、無機物でもよいが、アモ
ルファスシリコンおよび導電層の蒸着工程に耐える耐熱
性が必要である。糸状基体を太陽電池化する工程で採用
するグロー放電、ＣＶＤあるいは反応性スパッタリング
法では２５０℃〜３５０℃、イオンクラスタビーム法（
ＩＣＢ）では２００℃〜３００℃程度、の温度にさらさ
れる。有機物では、ポリイミド、ポリエーテルスルホン
、ポリエーテルイミド、ポリフェニレンサルファイドな
どが使用可能である。The thread-like substrate used in this invention includes monofilaments, multifilaments, spun yarns, etc. manufactured from organic or inorganic materials, and the thickness thereof is 10
It is from μm to 311 tl, preferably from 100 μI to 11 tl. If it is too thin, it will be difficult to connect the electrodes of the solar cell, and if it is too thick, it will have poor drape properties when made into a fabric, which is not desirable. The cross section of the filamentous substrate is usually circular, but it can be elliptical, angular, or various other shapes as required. For example, a flat filament produced by slitting or splitting a film can be used. The thickness of such a non-circular filament is the average value ((a +
b)/2) can be expressed as 15=. The filamentous substrate may be organic or inorganic, but must have heat resistance to withstand the vapor deposition process of amorphous silicon and conductive layers. The glow discharge, CVD, or reactive sputtering method used in the process of converting a filamentous substrate into a solar cell requires a temperature of 250°C to 350°C and an ion cluster beam method (
ICB) is exposed to temperatures of about 200°C to 300°C. As organic substances, polyimide, polyether sulfone, polyetherimide, polyphenylene sulfide, etc. can be used.
また、糸状基体はＳ電性であることが望ましい。Further, it is desirable that the filamentous substrate has S-electrification.
太陽電池の一方の電極は、アモルファスシリコン層の下
部に存在しなければならない。たとえば、金属モノフィ
ラメント、カーボンモノフィラメント、導電性有機モノ
フィラメントなど、モノフィラメント自身に導電性があ
れば、基体そのものを電極として用いることができるか
らである。導電性の低いフィラメントを用いる場合は、
アモルファスシリコンの蒸着前に、アルミニウムやタン
グステンのような材料の導電層をつけなければなら６−
ない。これは蒸着やめっきなどの方法により達成するこ
とができる。One electrode of the solar cell must be under the amorphous silicon layer. For example, if the monofilament itself has conductivity, such as a metal monofilament, a carbon monofilament, or a conductive organic monofilament, the substrate itself can be used as an electrode. When using a filament with low conductivity,
A conductive layer of material such as aluminum or tungsten must be applied before the amorphous silicon is deposited. This can be achieved by methods such as vapor deposition and plating.
糸状太陽電池は、このような糸状基体の上に、光導電性
アモルファスシリコン（ａ−８１１−１として表わされ
る）層と、上部電極層を形成することにより構成される
。アモルファスシリコン中の水素は、公知のように、ダ
ングリングボンドを補償してシリコン膜を高品質化する
鋤き持つ。第１図はショットキ型のフィラメント状太陽
電池の断面を示し、第１図に示すようなショットキセル
の場合には、フィラメント１上にｎ型ａ−３１：ＨＨ２
、ｉ型ａ −Ｓ Ｉ ： ｔｌ ｒｆｌ ３ 、ｊＪ
よびシＥｌ ｙ １−主電極４を順次形成して構成され
る。また、第２図はへテロフェイス型のフィラメント状
太陽電池の断面を示し、第２図に示すようなヘテロフェ
イスセルの場合には、フィラメント５上にｎ型ａ −Ｂ
１Ｈ１１６，１型ａ−３ｉ：）１層７、ｐ型ａ−ＢＩＨ
ＨＩｉ８および透明電極９を順次形成して構成される。A filamentous solar cell is constructed by forming a photoconductive amorphous silicon (denoted as a-811-1) layer and a top electrode layer on such a filamentous substrate. Hydrogen in amorphous silicon is known to compensate for dangling bonds and improve the quality of the silicon film. FIG. 1 shows a cross section of a Schottky type filament solar cell. In the case of the Schottky cell shown in FIG. 1, n-type a-31:HH2
, type i a-SI: tl rfl 3 , jJ
and El y 1 - the main electrode 4 are sequentially formed. In addition, FIG. 2 shows a cross section of a heteroface type filament solar cell. In the case of a heteroface cell as shown in FIG. 2, n-type a-B
1H116, 1 type a-3i:) 1 layer 7, p type a-BIH
It is constructed by sequentially forming HIi 8 and transparent electrode 9.
水素化アモルファスシリコンはグロー放電法、スパッタ
法、イオンブレーティング法（クラスタイオンビーム法
を含む）などの薄膜形成手段で形成される。また、ショ
ットキ電極は、Ａｕ、ｐｄ。Hydrogenated amorphous silicon is formed by a thin film forming method such as a glow discharge method, a sputtering method, or an ion blasting method (including a cluster ion beam method). Further, the Schottky electrode is made of Au, PD.
Ｐ【などの薄膜が利用でき、スパッタ法、蒸着法、イオ
ンブレーティング法などで形成することができる。透明
電極としてはインジウム・ヂタン・オキサイド（ｌＴＯ
）、５ｎｏ２などを用いることができ、これらはスパッ
タ法、電子ビームＮ着法などで作成することができる。A thin film such as P can be used and can be formed by sputtering, vapor deposition, ion blating, etc. Indium titanium oxide (lTO) is used as a transparent electrode.
), 5no2, etc. can be used, and these can be created by a sputtering method, an electron beam N deposition method, etc.
糸状太陽電池からの電極の取出しは、基本的には、ヘテ
ロフェイスセルの例について第３図に示したように、一
端において中心部のフィラメント１０がシリコン［１１
および透明電極１２で被覆されずに露出したままで残る
ように工程を進め、このフィラメント・１０と透明電極
１２を１苅の電極として利用すればよい。Basically, the electrodes are taken out from the filamentous solar cell as shown in FIG.
Then, the process is continued so that the filament 10 and the transparent electrode 12 remain exposed without being covered with the transparent electrode 12, and the filament 10 and the transparent electrode 12 can be used as one electrode.
糸状太陽電池は、たとえば、通信ケーブルと並行して用
いるなど、そのままワイヤとして使うこともできるが、
布帛状に成形加工して用いる用途が広い。この場合、糸
状太陽電池だ番プで布帛にしでもよいし、適当な糸と混
ぜて織物や編物にしてもよい。Thread-shaped solar cells can also be used as wires, for example, in parallel with communication cables.
It has a wide range of uses when molded into fabric. In this case, the thread-like solar cell paste may be used to make fabric, or it may be mixed with appropriate threads to make woven or knitted fabrics.
この発明の糸状基体を使った太陽電池は、フィラメント
間の目詰めがないため、ドレープ性が著しく優れている
。また、製繊や製編の種々のテクニック、および他のモ
ノフィラメント、マルチフィラメントあるいは紡績糸な
どの糸条物との混繊により優れたパターンをデザイン化
できるほか、布帛としての力学的特性しかなりの範囲で
設計可能である。A solar cell using the filamentous substrate of the present invention has extremely excellent drape properties because there is no packing between the filaments. In addition, it is possible to design excellent patterns by using various fiber-making and knitting techniques, and by mixing fibers with other yarns such as monofilaments, multifilaments, or spun yarns. It is possible to design within the range.
このように、この発明の糸状太陽電池は、身体着用に大
きなメリットを発揮する。衣服として着用ｆる場合は、
比較的日付を小さくして、人体の動きに沿いやすいよう
に設計する。また、リュックサックなど、強靭特性を重
視する用途では、厚地の布帛に加工するのが望ましい。In this way, the filamentous solar cell of the present invention exhibits great advantages when worn on the body. When worn as clothing,
The date is designed to be relatively small so that it can easily follow the movements of the human body. In addition, for applications such as backpacks where strong characteristics are important, it is desirable to process the material into thick fabric.
以下には、この発明の実施例について詳細に説明する。Examples of the present invention will be described in detail below.
なお、各種の評価、測定は特にことわらない限り以下の
条件によった。In addition, various evaluations and measurements were performed under the following conditions unless otherwise specified.
（イ） ドレープ性 ＪＩＳ １１０９６（６９− −１９−７）に準じる。(a) Drapability JIS 11096 (69- -19-7).
（ロ） 太陽電池特性
ソーラシミュレータを用いて１００ｍＷ／ｃｍ２（ＡＭ
ｌ）の光照射の下で光電変換効率を測定した。(b) Solar cell characteristics using a solar simulator at 100 mW/cm2 (AM
The photoelectric conversion efficiency was measured under the light irradiation of 1).
実施例１
この発明においては、主にクラスタイオンビーム法（よ
り下部１ｔｉ！、ａ −８１： ８層、透明導電層を形
成した。クラスタイオンビーム法は、ノズルを有（る密
閉型るつぼから蒸着物質を噴射【〕て、断熱膨張により
クラスタ（原子集団）を形成し、さらにイのクラスタを
イオン化し加速して基板に射突さぜ膜形成を行なう方法
である。糸状基体に向かうイオンは、方向づ番プられて
いるため、単一のるつぼのみを使用する場合は、フィラ
メント同曲全体にわたって均一に膜形成するには、フィ
ラメントを回転させることが必要であり、またフィラメ
ントを回転させる代わりに適宜なノズル形状を持つ複数
個のるつぼを適正に配置することによりフィラメント全
周に均一な膜形成を行なう１０−
ことができる。Example 1 In this invention, a transparent conductive layer was mainly formed using a cluster ion beam method (lower 1ti!, a-81: 8 layers). This is a method in which a material is injected to form clusters (atomic groups) by adiabatic expansion, and the clusters (A) are further ionized and accelerated to form a film by impinging on the substrate.Ions directed toward the filamentous substrate are If only a single crucible is used, it may be necessary to rotate the filament to achieve uniform film formation across the filament, and instead of rotating the filament. By appropriately arranging a plurality of crucibles having appropriate nozzle shapes, it is possible to form a uniform film all around the filament.
第４図は、後者の方法を適用したもので、基体材料１３
に関して対称な位置に配置された４つのるつぼ１４を有
するクラスタイオンど−ム装置により膜形成を行なった
。まず、１２０デニールのポリノジックフィラメント３
００本を３０ＣＩＩ１幅に一列に並べ、装置内に固定し
た。Ｉｌｌをチ１７−ジした４つのるつぼを定位置にセ
ットした後、試料室をＩ Ｘ １０ ’Ｔｏｒｒまで真
空排気し、４つのるつぼを１６００℃まで加熱して２０
０ＯＡ厚のへ庭層を形成した。るつぼが冷却した後、３
ｉをチャージした４つのるつぼに交換し、シリコン層を
形成した。詳しくは、５ Ｘ １０−７をＴｏｒｒに排
気した優、基体温度をランプ加熱により１８０℃に設定
した。Ｈ２ガスと水素で１％に希釈した小スフィンガス
（ＰＨ，）を５対１の流量比で試料室内に導入し、室内
をＩ Ｘ １０−１’Ｔｏｒｒに維持した。FIG. 4 shows an example in which the latter method is applied, with the base material 13
Film formation was performed using a cluster ion beam device having four crucibles 14 arranged at symmetrical positions. First, 120 denier polynosic filament 3
00 pieces were lined up in a line with a width of 30 CII and fixed in the device. After setting the four crucibles filled with Ill in their fixed positions, the sample chamber was evacuated to I x 10' Torr, and the four crucibles were heated to 1600°C and heated to 20
A 0OA thick Heniwa layer was formed. After the crucible has cooled, 3
The crucibles were replaced with four charged crucibles, and a silicon layer was formed. Specifically, the temperature of the substrate was set at 180° C. by lamp heating. Small sphine gas (PH,) diluted to 1% with H2 gas and hydrogen was introduced into the sample chamber at a flow rate ratio of 5:1, and the chamber was maintained at I x 10-1' Torr.
るつぼ加熱温度２０００〜２２００℃、イオン化！’流
２００ｍ Ａ （３００Ｖ）の条件で、ｎ型ａ−３ｉ：
Ｈｌｉを３０ＯＡ厚形成した。次いで、水素ガスのみを
導入して、同様にｉ型ａ−３＋：Ｈ層μＹノ
を５０００Ａ厚形成だ。さらに、水素ガスと水素で１％
に希釈したジボランカス（Ｂ２Ｈ６）を２対１の流量比
で試料室内に導入し、ｐ型ａ−８ｉ：Ｈｌｉを１００Ａ
厚形成し、フィラメント其体上にｐ１ｎ型ａ−８１：ｔ
１層を設けた。るつぼの冷ＩＩを持って、次にＳＯをチ
ャージしｌζ４つのるつぼに交換し、排気後２ Ｘ １
０ ＝Ｔｏｒｒの酸素中で１２００℃に加熱し、透明導
電膜を２０００Ａ厚形成した。Crucible heating temperature 2000-2200℃, ionization! 'N type a-3i under the condition of 200mA (300V) flow:
Hli was formed to a thickness of 30 OA. Next, by introducing only hydrogen gas, an i-type a-3+:H layer μY layer was similarly formed to a thickness of 5000A. In addition, 1% hydrogen gas and hydrogen
Diborancas (B2H6) diluted to
Thickly formed, p1n type a-81:t on the filament body
One layer was provided. Take crucible cold II, then charge SO and replace it with 4 crucibles, and after exhausting 2 x 1
It was heated to 1200° C. in oxygen at 0 Torr to form a transparent conductive film with a thickness of 2000 Å.
なお、この実施例においては、蒸着の各段階で、フィラ
メントの一端を適宜カバーし、第３図に示すように、下
部Ａ［１０が、シリコン１１１１を介して透明電極１２
から絶縁された形で露出づ゛るようにした。In this example, one end of the filament is appropriately covered at each stage of vapor deposition, and as shown in FIG.
It was designed to be exposed while being insulated from the outside.
このフィラメント状太陽電池から常法により１インチ開
帳９３本、横５６本密度で目付９００／ｍ２の平織り織
布を得た。From this filamentary solar cell, a plain weave woven fabric having a density of 93 1-inch sheets and 56 1-inch sheets and a basis weight of 900/m2 was obtained by a conventional method.
電極は、ポリエステル織布にポリイミド系接着剤を介し
て厚み１０μのアルミ箔を貼り合わせた電極片１５に、
第５図のように、ＡＱｉｉｌ出部１６および透明導電１
１１１１７を、それぞれ別個に銀ペーストで接着して形
成した。得られたヘテロフェイス太陽電池の特性は次の
とおりである。The electrode is an electrode piece 15 made of a 10 μm thick aluminum foil bonded to a polyester woven fabric via a polyimide adhesive.
As shown in FIG. 5, the AQiil output part 16 and the transparent conductor 1
11117 were formed by adhering them separately with silver paste. The properties of the obtained heteroface solar cell are as follows.
ドレープ性 ０．３５４
効率 ３．８％
比較例゛１
実施例１と同じ１２０デニールのポリノジックフィラメ
ントを用い、同じ平織り織物を得た。これに、ポリイミ
ド系接着剤を介して、厚み１０μのアルミ箔を貼り合わ
せて、裏面電極を形成し、これをＩ Ｘ １０−７Ｔｏ
ｒｒの真空下で１５０℃、２Ｈｒの乾燥を行なった。そ
の後、クラスタイオンビーム装置を用いで、２つのるつ
ぼを用いて、実施例１と同様の方法で、アルミ箔を貼り
会わせた面に太陽電池を形成した。但し、アルミ蒸着の
工程は省略した。この太陽電池の特性は下記のとおりで
あった。Drapability 0.354 Efficiency 3.8% Comparative Example 1 Using the same 120 denier polynosic filament as in Example 1, the same plain weave fabric was obtained. A 10μ thick aluminum foil was attached to this via a polyimide adhesive to form a back electrode, and this was
Drying was carried out at 150° C. for 2 hours under a vacuum of 150°C. Thereafter, a solar cell was formed on the surface to which the aluminum foil was attached in the same manner as in Example 1 using a cluster ion beam device and two crucibles. However, the step of aluminum vapor deposition was omitted. The characteristics of this solar cell were as follows.
トレー１性 ０．６２８
効率 ３．５％
１３一
実施例２
市販のポリイミドフィルム（０，１１１１１１厚）に実
施例１と同じ条件で導電層、アモルファスシリコン層、
およびＳｎ ０２層を形成した。次いで、このフィルム
を、０ 、５ ｉｔｓ幅にスリットし、常法により目付
１００［１，／ＩＩ’のへツシャンクロスに織り上げた
。電極形成は、実施例１と同様に方法で行なった。得ら
れた布帛状太陽電池の特性は次のとおりであった。Tray property: 0.628 Efficiency: 3.5% 13-Example 2 A conductive layer, an amorphous silicon layer,
and a Sn02 layer. Next, this film was slit into a width of 0.5 ITS and woven into a Hetsushan cloth with a basis weight of 100[1,/II'] by a conventional method. Electrodes were formed in the same manner as in Example 1. The properties of the obtained fabric solar cell were as follows.
ドレープ性 ０．４５１
効率 ３．４％
比較例２
実施例２においてスリットする前の蒸着フィルムの太陽
電池の特性を測定したところ、次のとおりであった。Drapability: 0.451 Efficiency: 3.4% Comparative Example 2 The characteristics of the solar cell of the deposited film before slitting in Example 2 were measured and were as follows.
ドレープ性 ０．７９６ 効率 ３．６％ 明らかにドレープ性は実施例２に比較して小さい。Drapability 0.796 Efficiency 3.6% The drapability is clearly lower than that of Example 2.
実施例３
１４−
実施例１で得たフィラメント状太陽電池をトリコット編
で目付１００ｇ／ｍ ２の編物を（ｑた。この編物に、
電極形成して作成した太陽電池は、１゜８％の先輩変換
効率を示した。Example 3 14- The filamentary solar cell obtained in Example 1 was knitted into a tricot fabric with a fabric weight of 100 g/m2.
The solar cell prepared by forming the electrodes showed a superior conversion efficiency of 1.8%.
実ＩＭ例４
直径０．２ｆｆｉｍのステンレスフィラメントに、実施
例１ど同様な方法で、アモルファスシリコン層と透明電
極を形成し、フィラメント状太陽電池を得た。但し、膜
形成時の基体温度は２２０℃とした。これを５０メツシ
ユの平織りネットに形成して、フレキシブル太陽電池と
したところ、２．５％の変換効率を得た。Actual IM Example 4 An amorphous silicon layer and a transparent electrode were formed on a stainless steel filament having a diameter of 0.2 ffim in the same manner as in Example 1 to obtain a filament-shaped solar cell. However, the substrate temperature during film formation was 220°C. When this was formed into a 50-mesh plain-woven net to make a flexible solar cell, a conversion efficiency of 2.5% was obtained.
実施例５
実施例４で得たフィラメント状太陽電池をワイヤの形で
そのまま２ＣＩＩｌの長さに切断し、一端の５ｎｏｚ層
とａ−３ｉ：８層を化学研磨により剥離させ、第３図の
ような構造にした上で、両端の電極、すなわちステンレ
スとＳ ｎ Ｏ２をそれぞれ別個の導線（０，２ｍ１ｌ
ｌφ）に銀ペーストで接着した。Example 5 The filamentary solar cell obtained in Example 4 was cut into a length of 2CIIl in the form of a wire, and the 5noz layer and the a-3i:8 layer at one end were peeled off by chemical polishing to form a shape as shown in Figure 3. After making the structure, the electrodes at both ends, that is, the stainless steel and S n O2
lφ) with silver paste.
これに１００ｎ Ｗ／ｃｍ’ （ＡＭ １ ）の光照
射を行１５−
なったところ、開放端電圧６８０ｍ Ｖ、短絡電流０．
２０１１Ａを得た。When this was irradiated with light at 100 nW/cm' (AM 1 ), the open circuit voltage was 680 mV and the short circuit current was 0.
2011A was obtained.
第１図および第２図はそれぞれショットキ型およびヘテ
ロフェイス型のフィラメント状太陽電池の構成を示す。
第３図はフィラメント状太陽電池からの電極取出しのた
めの説明図である。第４図は、フィラメンＩ・状試利ど
クラスタビーム発生用ノズルの配匡了を示づ。第５図（
Ｊ、布帛状太陽電池からの電極取出しの説明図である。
図において：１．５．１３はフィシメン１−Ｍ体；２．
６はｎ型ａ−８ｉ：８層：３．７はｉ型ａ−８１：Ｈｔ
ｌ；４はショツ１ヘキｔ［：８４ユｐ型ａ−３ｉ：８層
：９．１２．１７は透明導電膜；１０１１６は下部電極
；１１はａ−８ｉ ： １−（１博： １４目るつぼ
；１５は電極片である。
特許出願人 東洋紡績株式会社
３８FIGS. 1 and 2 show the configurations of Schottky type and heteroface type filament solar cells, respectively. FIG. 3 is an explanatory diagram for taking out electrodes from a filament solar cell. FIG. 4 shows the installation of a nozzle for generating a cluster beam using a filament I-shaped sample. Figure 5 (
J, is an explanatory diagram of electrode extraction from a fabric-like solar cell. In the figure: 1.5.13 is ficimene 1-M body; 2.
6 is n-type a-8i: 8 layers: 3.7 is i-type a-81:Ht
l; 4 is shot 1 heki t [: 84 Yup type a-3i: 8 layers: 9.12.17 is transparent conductive film; 10116 is lower electrode; 11 is a-8i: 1-(1 h: 14th Crucible; 15 is an electrode piece. Patent applicant: Toyobo Co., Ltd. 38
Claims (5)
有する糸状太陽電池。(1) A filamentous solar cell having an amorphous silicon thin film layer on a filamentous substrate.
第１項記載の糸状太陽電池。(2) The filamentous solar cell according to claim 1, wherein the filamentous substrate has electrical conductivity.
有する特許請求の範囲第１項記載の糸状太陽電池。(3) The filamentous solar cell according to claim 1, wherein the filamentous substrate has a thickness of 10 μm to 3111 μm.
求の範囲第１項記載の糸状太陽電池。(4) The filamentous solar cell according to claim 1, wherein the filamentous substrate is a monofilament.
囲第１項記載の糸状太陽電池。(5) The filamentous solar cell according to claim 1, wherein the filamentous substrate is a flat filament.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58017768A JPS59143377A (en) | 1983-02-05 | 1983-02-05 | Thread type solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58017768A JPS59143377A (en) | 1983-02-05 | 1983-02-05 | Thread type solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59143377A true JPS59143377A (en) | 1984-08-16 |
Family
ID=11952888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58017768A Pending JPS59143377A (en) | 1983-02-05 | 1983-02-05 | Thread type solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59143377A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4913744A (en) * | 1987-01-13 | 1990-04-03 | Helmut Hoegl | Solar cell arrangement |
| DE4328868A1 (en) * | 1993-08-27 | 1995-03-02 | Twin Solar Technik Entwicklung | Element of a photovoltaic solar cell and method for its production as well as its arrangement in a solar cell |
| WO2002037577A2 (en) * | 2000-10-31 | 2002-05-10 | Universität Stuttgart | Fiber, electronic circuit and textile product |
| US7196262B2 (en) | 2005-06-20 | 2007-03-27 | Solyndra, Inc. | Bifacial elongated solar cell devices |
| US7259322B2 (en) | 2006-01-09 | 2007-08-21 | Solyndra, Inc. | Interconnects for solar cell devices |
| GB2439412A (en) * | 2006-06-23 | 2007-12-27 | Wilkie J & D Ltd | Flexible solar panel |
| US7394016B2 (en) | 2005-10-11 | 2008-07-01 | Solyndra, Inc. | Bifacial elongated solar cell devices with internal reflectors |
| US7535019B1 (en) | 2003-02-18 | 2009-05-19 | Nanosolar, Inc. | Optoelectronic fiber |
| US7879685B2 (en) | 2006-08-04 | 2011-02-01 | Solyndra, Inc. | System and method for creating electric isolation between layers comprising solar cells |
| US8093493B2 (en) | 2007-04-30 | 2012-01-10 | Solyndra Llc | Volume compensation within a photovoltaic device |
| US8106292B2 (en) | 2007-04-30 | 2012-01-31 | Solyndra Llc | Volume compensation within a photovoltaic device |
| US8183458B2 (en) | 2007-03-13 | 2012-05-22 | Solyndra Llc | Photovoltaic apparatus having a filler layer and method for making the same |
| US8344238B2 (en) | 2005-07-19 | 2013-01-01 | Solyndra Llc | Self-cleaning protective coatings for use with photovoltaic cells |
| US8742252B2 (en) | 2006-03-18 | 2014-06-03 | Solyndra, Llc | Elongated photovoltaic cells in casings with a filling layer |
| JP2017084909A (en) * | 2015-10-26 | 2017-05-18 | 住江織物株式会社 | Parallel connection structure of fibrous optical power generation element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279890A (en) * | 1975-12-26 | 1977-07-05 | Masahisa Muroki | Multiilayer coaxial fibrous solar battery |
| JPS5726476A (en) * | 1980-07-23 | 1982-02-12 | Takenori Soma | Linear photoelectromotive force element |
-
1983
- 1983-02-05 JP JP58017768A patent/JPS59143377A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279890A (en) * | 1975-12-26 | 1977-07-05 | Masahisa Muroki | Multiilayer coaxial fibrous solar battery |
| JPS5726476A (en) * | 1980-07-23 | 1982-02-12 | Takenori Soma | Linear photoelectromotive force element |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4913744A (en) * | 1987-01-13 | 1990-04-03 | Helmut Hoegl | Solar cell arrangement |
| DE4328868A1 (en) * | 1993-08-27 | 1995-03-02 | Twin Solar Technik Entwicklung | Element of a photovoltaic solar cell and method for its production as well as its arrangement in a solar cell |
| WO2002037577A2 (en) * | 2000-10-31 | 2002-05-10 | Universität Stuttgart | Fiber, electronic circuit and textile product |
| WO2002037577A3 (en) * | 2000-10-31 | 2002-09-12 | Univ Stuttgart | Fiber, electronic circuit and textile product |
| US7535019B1 (en) | 2003-02-18 | 2009-05-19 | Nanosolar, Inc. | Optoelectronic fiber |
| US7196262B2 (en) | 2005-06-20 | 2007-03-27 | Solyndra, Inc. | Bifacial elongated solar cell devices |
| US8344238B2 (en) | 2005-07-19 | 2013-01-01 | Solyndra Llc | Self-cleaning protective coatings for use with photovoltaic cells |
| US7394016B2 (en) | 2005-10-11 | 2008-07-01 | Solyndra, Inc. | Bifacial elongated solar cell devices with internal reflectors |
| US7259322B2 (en) | 2006-01-09 | 2007-08-21 | Solyndra, Inc. | Interconnects for solar cell devices |
| US8067688B2 (en) | 2006-01-09 | 2011-11-29 | Solyndra Llc | Interconnects for solar cell devices |
| US8742252B2 (en) | 2006-03-18 | 2014-06-03 | Solyndra, Llc | Elongated photovoltaic cells in casings with a filling layer |
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