DE4328868A1 - Element of a photovoltaic solar cell and method for its production as well as its arrangement in a solar cell - Google Patents
Element of a photovoltaic solar cell and method for its production as well as its arrangement in a solar cellInfo
- Publication number
- DE4328868A1 DE4328868A1 DE4328868A DE4328868A DE4328868A1 DE 4328868 A1 DE4328868 A1 DE 4328868A1 DE 4328868 A DE4328868 A DE 4328868A DE 4328868 A DE4328868 A DE 4328868A DE 4328868 A1 DE4328868 A1 DE 4328868A1
- Authority
- DE
- Germany
- Prior art keywords
- coating
- electrode
- solar cell
- photovoltaic
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 9
- 238000000576 coating method Methods 0.000 claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000011149 active material Substances 0.000 claims abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000009503 electrostatic coating Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000013517 stratification Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- -1 copper Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Die Erfindung betrifft ein Element einer photovoltai schen Solarzelle mit mindestens einer langgestreckten bzw. stab- oder draht- (bzw. faden-) oder bandförmigen Elektrode, welche auf ihrer Oberfläche mindestens eine photovoltaisch wirksame Beschichtung aufweist sowie ein Verfahren zu seiner Herstellung sowie deren Anordnung in einer photovoltaischen Solarzelle.The invention relates to an element of a photovoltaic solar cell with at least one elongated or rod or wire (or thread) or ribbon-shaped Electrode, which has at least one on its surface has photovoltaically effective coating and a Process for its preparation and its arrangement in a photovoltaic solar cell.
Aufgabe der Erfindung ist es, eine bezüglich seiner Her stellungskosten und seines Wirkungsgrades verbessertes Element für photovoltaische Solarzellen sowie eine dementsprechend verbesserte Solarzelle zu schaffen.The object of the invention is one with respect to its Her cost of ownership and its efficiency improved Element for photovoltaic solar cells as well as a accordingly to create improved solar cell.
Demgemäß besteht die Erfindung darin, daß die Elektrode aus einem elektrisch gut leitenden Material, insbeson dere unreinem Silicium mit multi- oder polykristallinem, vorzugsweise monokristallinem Gefüge und die Be schichtung aus einem auf der Oberfläche der Elektrode mono- oder multikristallinem photovoltaisch wirksamen Material, insbesondere Silicium mit einer bestimmten Dotierung (p- oder n-Dotierung) besteht.Accordingly, the invention is that the electrode made of an electrically highly conductive material, in particular their impure silicon with multi- or polycrystalline, preferably monocrystalline structure and the Be layering of one on the surface of the electrode mono- or multicrystalline photovoltaic effective Material, especially silicon with a certain Doping (p- or n-doping) exists.
In bevorzugter Ausführungsform besteht also sowohl die den Strom leitende Elektrode als auch deren Beschichtung aus Silicium, jedoch mit unterschiedlichem Aufbau, näm lich der Elektrode aus unreinem, gut Strom leitendem und der Beschichtung aus möglichst reinem, aber zwecks pho tovoltaisch optimaler Wirksamkeit gezielt dotiertem Silicium höheren Reinheitsgrades.In a preferred embodiment, there is both the current-conducting electrode and its coating made of silicon, but with different structures, näm Lich the electrode made of impure, good electricity and the coating of the purest possible, but for the purpose of pho optimally doped Silicon of higher purity.
Grundsätzlich würde eine einzige solche Beschichtung auf einer Siliziumelektrode ausreichen, indem das in der Beschichtung gebildete Ladungsfeld (p- oder n) mit den entgegengesetzten Ladungsträgern innerhalb der Elek trode das photovoltaische Spannungsfeld bzw. die zwei entgegengesetzten Ladungsfelder bildet, während die demgegenüber überschüssigen, d. h. gegenüber dem quanti tativ in der Beschichtung gebildeten Ladungspotential zusätzlich in der Elektrode gegebenen frei beweglichen Ladungsträger der verbesserten elektrischen Leitfähig keit der Si-Elektrode dienen.Basically, a single such coating would be on a silicon electrode are sufficient by the in the Coating charge field (p- or n) with the opposite charge carriers within the elec trode the photovoltaic voltage field or the two forms opposite charge fields, while the in contrast, excess, d. H. compared to the quanti charge potential formed in the coating additionally freely movable in the electrode Charge carriers of improved electrical conductivity serve the Si electrode.
Sinngemäß kann der Randbereich in der Elektrode bei entsprechender Zusammensetzung des Siliciums ein posi tives oder negatives Ladungsfeld und die Beschichtung entsprechend entgegengesetzt (p- oder n) dotiert sein.The edge area in the electrode can also be used appropriate composition of the silicon a posi tive or negative charge field and the coating be doped accordingly opposite (p- or n).
Bei der Verwendung von Silicium als Elektrodenmaterial kann das Elektrodengefüge multikristallin aufgebaut sein, so daß die Beschichtung aufgrund epitaktischer Wirkung entsprechend grob-kristallin, insbesondere auch monokristallin aufgebaut sein kann.When using silicon as electrode material the structure of the electrodes can be multicrystalline be so that the coating due to epitaxial Effect roughly crystalline, especially can be monocrystalline.
Analoge Effekte können auch mit anderen Materialien zum Einsatz gebracht werden. Analog effects can also be used with other materials Be put into action.
Die Erfindung ist mit den Merkmalen der Patentansprüche 2 und 3 modifizierbar und besteht in einer Solarzellenanordnung gemäß den Patentansprüchen 4 bis 10 und umfaßt auch das Herstellungsverfahren gemäß den weiteren Patentansprüchen.The invention is with the features of the claims 2 and 3 can be modified and consists of one Solar cell arrangement according to claims 4 to 10 and also includes the manufacturing process according to the further patent claims.
Die Erfindung ist nachstehend anhand von Fig. 1-8 näher erläutert:The invention is explained in more detail below with reference to FIGS. 1-8:
Gemäß Fig. 1 und 2 ist im Längsschnitt und im Querschnitt eine aus Silicium gezogene langgestreckte bzw. geformte langgestreckte Elektrode 2 mit einer photovoltaisch wirksamen Beschichtung 3 versehen, welche aus einer radial inneren Lage 5 und einer darauf angebrachten äußeren Lage 6 bestehen kann, wobei die Lagen 5 und 6 entgegengesetzt dotiert sind (p- bzw n).According to Fig. 1 and 2, a solid silicon elongated or shaped elongated electrode 2 which is provided with a photovoltaically active coating 3 in longitudinal section and in cross-section, which may consist of a radially inner layer 5 and mounted thereon outer layer 6, the Layers 5 and 6 are doped in opposite directions (p- or n).
In den Fig. 3 und 4 ist analog eine Elektrode 2 jedoch mit nur einer Beschichtung 3 aus nur einer ein zelnen Lage bestimmter Dotierung (p- oder n - hier p) dargestellt. Dabei kann sich beidseits der Beschich tungsgrenze auf der Oberfläche der Elektrode eine La dungsfeldtrennung aus Elektronen 12 (-) und - in der Beschichtung 3 - aus "Löchern" (p) bzw. + bilden, wäh rend ein Elektronenüberschuß 13 einer Erhöhung der elek trischen Leitfähigkeit des Siliciums dienen kann.In Figs. 3 and 4 is analogous to an electrode 2, however, only with a coating 3 of only one of an individual situation of certain dopants (p or n - p here) shown. Here, on both sides of the coating limit on the surface of the electrode, a charge field separation of electrons 12 (-) and - in the coating 3 - from "holes" (p) or + can form, while an electron excess 13 increases the electrical Conductivity of the silicon can serve.
Auch kann durch Diffusionseinwirkung eine Dotie rungsschicht 14 in die Oberfläche der Elektrode 2 hin einverlagert werden, insbesondere nach vorheriger Dif fusionsreinigung bzw. Beeinflussung dicht unter der Oberfläche des Elektrodenmaterials.A doping layer 14 can also be displaced into the surface of the electrode 2 by the action of diffusion, in particular after prior diffusion cleaning or influencing directly below the surface of the electrode material.
Beim Aneinanderfügen zweier Elemente aus beschichteten 3 Elektroden 2 gemäß den Fig. 5 und 6 bildet sich zwischen den Elektroden 2 bzw. als Anordnung zweier jeweils als Elektrode 2 und Gegenelektrode 7 mit jeweils entgegenge setzter Dotierung ihrer Beschichtungsoberflächen eine photovoltaische Solarzelle, so daß der Strom radial durch die Beschichtungen 3 zwischen den Elektroden 2 und 7 fließt.When joining two elements of coated 3 electrodes 2 as shown in FIGS. 5 and 6 forms between the electrodes 2 or as an arrangement of two respectively as the electrode 2 and counter electrode 7, each entgegenge modifying dopant their coating surfaces of a photovoltaic solar cell, so that the current radial flows through the coatings 3 between the electrodes 2 and 7 .
Gemäß Fig. 7 können jeweils zwei auf der Oberfläche ihrer Beschichtung 3 entgegengesetzt dotierte Elemente 1 auf einer metallischen Fläche (die auch reflektierend ausgeführt sein kann) entweder auf Abstand 8 oder auch aneinander (analog Fig. 5 und 6) elektrisch leitend verbunden angebracht sein.According to FIG. 7, two elements 1 with opposite doping on the surface of their coating 3 can be attached on a metallic surface (which can also be reflective) either at a distance of 8 or also connected to one another (analogously to FIGS. 5 and 6) in an electrically conductive manner.
Gemäß Fig. 8 kann die Fläche 9 als photovoltaisches Element auf der den Elementen 1 zugewandten Seite eben falls mit einer photovoltaisch wirksamen Beschichtung 3 versehen sein, auf der die Elemente 1 elektrisch leitend angebracht sind. Dabei wirkt die photovoltaisch beschichtete Fläche 10 als Gegenelektrode, während die Elemente 1 mit zur Oberfläche der photovoltaischen Be schichtung entgegengesetzt dotierter Beschichtungsober fläche auf lateralen Abstand (8 analog Fig. 7) auf der Oberfläche der photovoltaischen Beschichtung elektrisch leitend verbunden sind.Referring to FIG. 8, the surface 9 may be provided just as if the photovoltaic element on the elements 1 facing side with a photovoltaically active coating 3 on which the elements 1 are mounted electrically conductive. The photovoltaically coated surface 10 acts as a counterelectrode, while the elements 1 are connected to the surface of the photovoltaic coating with the opposite doping coating surface at a lateral distance ( 8 analogous to FIG. 7) on the surface of the photovoltaic coating.
Fig. 9 zeigt ein Auftragungsverfahren mittels Auf bringung des Beschichtungsmaterials durch kontinuierli ches Hindurchziehen z. B. eines Elektrodendrahtes 2 aus unterschiedlichen Materialien wie Metallen (z. B. Kupfer, Aluminium, Wolfram), auf dem in Laufrichtung 25 vor den Ziehsteinen 24 das Auftragen 26 des Beschichtungsmate rials 27 erfolgt, das sich auch vor der Ziehdüse der einzelnen Ziehstationen 21-13 stauen kann. Fig. 9 shows an application method by applying the coating material by continuous pulling z. B. an electrode wire 2 made of different materials such as metals (e.g. copper, aluminum, tungsten), on which in the direction 25 in front of the drawing dies 24 the application 26 of the coating material 27 takes place, which is also in front of the drawing nozzle of the individual drawing stations 21st -13 can jam.
Mit diesem Verfahren kann auch das Gefüge und der Quer schnitt des Elektrodendrahtes selbst beeinflußt werden. Jedenfalls läßt sich unter den Druckverhältnissen inner halb der Ziehdüse eine gesteuerte Gefügeausbildung, eine optimal enge und verunreinigungsfreie Verbindung mehre rer Schichten miteinander bzw. auf der Oberfläche der Elektrode mit optimaler Gleichmäßigkeit und dünnschich tiger Schichtdicke erreichen.This procedure can also be used to structure and cross cut of the electrode wire itself can be influenced. In any case, it can be done under the pressure conditions A controlled microstructure formation, half of the drawing nozzle optimally tight and contamination-free connection rer layers with each other or on the surface of the Electrode with optimal uniformity and thin layer reach the layer thickness.
Unter den Druckverhältnissen innerhalb der Ziehdüse sind auch chemische Veränderungen (z. B. Oxidation bei Kupfer) der Elektrodenoberfläche oder der Auftragsmaterialien wie auch z. B. interkristalline Verbindungen möglich.Under the pressure conditions inside the die are also chemical changes (e.g. oxidation of copper) the electrode surface or the application materials as well as B. intercrystalline compounds possible.
Claims (21)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4328868A DE4328868A1 (en) | 1993-08-27 | 1993-08-27 | Element of a photovoltaic solar cell and method for its production as well as its arrangement in a solar cell |
EP94113324A EP0641029A3 (en) | 1993-08-27 | 1994-08-25 | Element for a photovoltaic solar cell and process of fabrication as well as its arrangement in a solar cell |
US08/296,770 US5902416A (en) | 1993-08-27 | 1994-08-26 | Element of a photovoltaic solar cell and a process for the production thereof as well as the arrangement thereof in a solar cell |
JP6226061A JPH07221332A (en) | 1993-08-27 | 1994-08-29 | Device of solar cell, its preparation and solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4328868A DE4328868A1 (en) | 1993-08-27 | 1993-08-27 | Element of a photovoltaic solar cell and method for its production as well as its arrangement in a solar cell |
Publications (1)
Publication Number | Publication Date |
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DE4328868A1 true DE4328868A1 (en) | 1995-03-02 |
Family
ID=6496183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE4328868A Withdrawn DE4328868A1 (en) | 1993-08-27 | 1993-08-27 | Element of a photovoltaic solar cell and method for its production as well as its arrangement in a solar cell |
Country Status (1)
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DE (1) | DE4328868A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19909417A1 (en) * | 1999-03-04 | 2000-11-16 | Manfred Baumgaertner | Solar collector made of fibers |
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US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
GB2073949A (en) * | 1980-04-11 | 1981-10-21 | Bayer Ag | Photovoltaic cell with textile sheet structure |
JPS5726476A (en) * | 1980-07-23 | 1982-02-12 | Takenori Soma | Linear photoelectromotive force element |
JPS5726475A (en) * | 1980-07-23 | 1982-02-12 | Takenori Soma | Linear photoelectromotive force element |
JPS59125670A (en) * | 1983-01-06 | 1984-07-20 | Toppan Printing Co Ltd | Solar battery |
DE3302934A1 (en) * | 1983-01-28 | 1984-08-02 | Hans Georg 8000 München März | Solar generator |
JPS59143377A (en) * | 1983-02-05 | 1984-08-16 | Toyobo Co Ltd | Thread type solar battery |
JPS59144177A (en) * | 1983-02-07 | 1984-08-18 | Seiko Epson Corp | Solar battery |
WO1984004425A1 (en) * | 1983-04-25 | 1984-11-08 | Inst Microtechnique De L Unive | Large surface photovoltaic cell and production method thereof |
JPS6042876A (en) * | 1983-08-19 | 1985-03-07 | Masahisa Muroki | Cloth-like solar battery |
JPS6084887A (en) * | 1983-10-14 | 1985-05-14 | Sumitomo Electric Ind Ltd | Manufacture of linear amorphous solar battery |
JPS6129179A (en) * | 1984-07-19 | 1986-02-10 | Oki Electric Ind Co Ltd | Fibrous photoelectric converter |
EP0275006A2 (en) * | 1987-01-13 | 1988-07-20 | Helmut Dr. Hoegl | Solar cell around a lengthened electrode, arrangement and process for manufacturing the same |
-
1993
- 1993-08-27 DE DE4328868A patent/DE4328868A1/en not_active Withdrawn
Patent Citations (13)
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US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
GB2073949A (en) * | 1980-04-11 | 1981-10-21 | Bayer Ag | Photovoltaic cell with textile sheet structure |
JPS5726476A (en) * | 1980-07-23 | 1982-02-12 | Takenori Soma | Linear photoelectromotive force element |
JPS5726475A (en) * | 1980-07-23 | 1982-02-12 | Takenori Soma | Linear photoelectromotive force element |
JPS59125670A (en) * | 1983-01-06 | 1984-07-20 | Toppan Printing Co Ltd | Solar battery |
DE3302934A1 (en) * | 1983-01-28 | 1984-08-02 | Hans Georg 8000 München März | Solar generator |
JPS59143377A (en) * | 1983-02-05 | 1984-08-16 | Toyobo Co Ltd | Thread type solar battery |
JPS59144177A (en) * | 1983-02-07 | 1984-08-18 | Seiko Epson Corp | Solar battery |
WO1984004425A1 (en) * | 1983-04-25 | 1984-11-08 | Inst Microtechnique De L Unive | Large surface photovoltaic cell and production method thereof |
JPS6042876A (en) * | 1983-08-19 | 1985-03-07 | Masahisa Muroki | Cloth-like solar battery |
JPS6084887A (en) * | 1983-10-14 | 1985-05-14 | Sumitomo Electric Ind Ltd | Manufacture of linear amorphous solar battery |
JPS6129179A (en) * | 1984-07-19 | 1986-02-10 | Oki Electric Ind Co Ltd | Fibrous photoelectric converter |
EP0275006A2 (en) * | 1987-01-13 | 1988-07-20 | Helmut Dr. Hoegl | Solar cell around a lengthened electrode, arrangement and process for manufacturing the same |
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Title |
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Patents Abstracts of Japan: & JP 59-125670 A, E-279, Nov. 16, 1984, Vol. 8, No.250 * |
Patents Abstracts of Japan: & JP 59-143377 A, E-284, Dec. 13, 1984, Vol. 8, No.272 * |
Patents Abstracts of Japan: & JP 60-042876 A, E-328, July 13, 1985, Vol. 9, No.169 * |
Patents Abstracts of Japan: & JP 60-084887 A, E-343, Sept.17, 1985, Vol. 9, No.230 * |
Patents Abstracts of Japan: & JP 61-029179 A, E-414, June 24, 1986, Vol.10, No.179 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19909417A1 (en) * | 1999-03-04 | 2000-11-16 | Manfred Baumgaertner | Solar collector made of fibers |
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