CN100490180C - 纵向场效应晶体管及其制造方法 - Google Patents
纵向场效应晶体管及其制造方法 Download PDFInfo
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- CN100490180C CN100490180C CNB2005800017622A CN200580001762A CN100490180C CN 100490180 C CN100490180 C CN 100490180C CN B2005800017622 A CNB2005800017622 A CN B2005800017622A CN 200580001762 A CN200580001762 A CN 200580001762A CN 100490180 C CN100490180 C CN 100490180C
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- upper electrode
- active region
- dielectric portion
- lower electrode
- electric conductor
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Images
Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004291170 | 2004-10-04 | ||
JP291170/2004 | 2004-10-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1906771A CN1906771A (zh) | 2007-01-31 |
CN100490180C true CN100490180C (zh) | 2009-05-20 |
Family
ID=34956325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800017622A Expired - Fee Related CN100490180C (zh) | 2004-10-04 | 2005-09-28 | 纵向场效应晶体管及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7586130B2 (zh) |
JP (1) | JP4568286B2 (zh) |
CN (1) | CN100490180C (zh) |
WO (1) | WO2006038504A1 (zh) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100574317B1 (ko) * | 2004-02-19 | 2006-04-26 | 삼성전자주식회사 | 게이트 구조물, 이를 갖는 반도체 장치 및 그 형성 방법 |
EP1747577A2 (en) * | 2004-04-30 | 2007-01-31 | Nanosys, Inc. | Systems and methods for nanowire growth and harvesting |
US7230286B2 (en) * | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
US20060281321A1 (en) * | 2005-06-13 | 2006-12-14 | Conley John F Jr | Nanowire sensor device structures |
US7446372B2 (en) * | 2005-09-01 | 2008-11-04 | Micron Technology, Inc. | DRAM tunneling access transistor |
TWI300251B (en) * | 2006-07-14 | 2008-08-21 | Ind Tech Res Inst | Manufacturing method of vertical thin film transistor |
EP2074660A1 (en) | 2006-09-04 | 2009-07-01 | Nxp B.V. | Control of carbon nanostructure growth in an interconnect structure |
US7573420B2 (en) * | 2007-05-14 | 2009-08-11 | Infineon Technologies Ag | RF front-end for a radar system |
WO2008117362A1 (ja) * | 2007-03-23 | 2008-10-02 | Pioneer Corporation | 有機トランジスタ及びその製造方法 |
WO2009023304A2 (en) * | 2007-05-02 | 2009-02-19 | Atomate Corporation | High density nanotube devices |
EP2019313B1 (en) * | 2007-07-25 | 2015-09-16 | Stichting IMEC Nederland | Sensor device comprising elongated nanostructures, its use and manufacturing method |
KR100900148B1 (ko) * | 2007-10-31 | 2009-06-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
WO2009064842A1 (en) * | 2007-11-13 | 2009-05-22 | William Marsh Rice Unvirsity | Vertically-stacked electronic devices having conductive carbon films |
FR2924108B1 (fr) * | 2007-11-28 | 2010-02-12 | Commissariat Energie Atomique | Procede d'elaboration, sur un materiau dielectrique, de nanofils en materiaux semi-conducteur connectant deux electrodes |
US8563380B2 (en) * | 2008-01-07 | 2013-10-22 | Shachar Richter | Electric nanodevice and method of manufacturing same |
TWI368315B (en) * | 2008-08-27 | 2012-07-11 | Nanya Technology Corp | Transistor structure, dynamic random access memory containing the transistor structure, and method of making the same |
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JPWO2006038504A1 (ja) | 2008-05-15 |
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US20060125025A1 (en) | 2006-06-15 |
US7586130B2 (en) | 2009-09-08 |
CN1906771A (zh) | 2007-01-31 |
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