US20010042866A1 - Inxalygazn optical emitters fabricated via substrate removal - Google Patents

Inxalygazn optical emitters fabricated via substrate removal Download PDF

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Publication number
US20010042866A1
US20010042866A1 US09/245,503 US24550399A US2001042866A1 US 20010042866 A1 US20010042866 A1 US 20010042866A1 US 24550399 A US24550399 A US 24550399A US 2001042866 A1 US2001042866 A1 US 2001042866A1
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United States
Prior art keywords
substrate
light
inalgan
emitting structure
host substrate
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Abandoned
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US09/245,503
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English (en)
Inventor
Carrie Carter Coman
Fred A. Kish
Michael R. Krames
Paul S. Martin
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Lumileds LLC
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Lumileds LLC
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Priority to US09/245,503 priority Critical patent/US20010042866A1/en
Assigned to HEWLETT-PACKARD COMPANY reassignment HEWLETT-PACKARD COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MARTIN, PAUL S., CARTER-COMAN, CARRIE, KISH, FRED A., JR., KRAMES, MICHAEL R.
Priority to TW088114965A priority patent/TW441137B/zh
Priority to CN99126436.3A priority patent/CN1262528A/zh
Priority to DE10000088A priority patent/DE10000088A1/de
Priority to JP2000023885A priority patent/JP4860024B2/ja
Priority to KR1020000005186A priority patent/KR100649777B1/ko
Priority to GB0002753A priority patent/GB2346478A/en
Assigned to HEWLETT-PACKARD COMPANY, A CORP. OF DELAWARE reassignment HEWLETT-PACKARD COMPANY, A CORP. OF DELAWARE CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: HEWLETT-PACKARD COMPANY
Assigned to HEWLETT-PACKARD COMPANY reassignment HEWLETT-PACKARD COMPANY MERGER (SEE DOCUMENT FOR DETAILS). Assignors: HEWLETT-PACKARD COMPANY
Assigned to AGILENT TECHNOLOGIES INC reassignment AGILENT TECHNOLOGIES INC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HEWLETT-PACKARD COMPANY
Assigned to LUMILEDS LIGHTING, U.S., LLC reassignment LUMILEDS LIGHTING, U.S., LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AGILENT TECHNOLOGIES, INC.
Publication of US20010042866A1 publication Critical patent/US20010042866A1/en
Priority to US10/631,001 priority patent/US6800500B2/en
Priority to US11/330,209 priority patent/US7491565B2/en
Assigned to PHILIPS LUMILEDS LIGHTING COMPANY LLC reassignment PHILIPS LUMILEDS LIGHTING COMPANY LLC CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: LUMILEDS LIGHTING U.S. LLC, LUMILEDS LIGHTING U.S., LLC, LUMILEDS LIGHTING, U.S. LLC, LUMILEDS LIGHTING, U.S., LLC
Assigned to LUMILEDS LLC reassignment LUMILEDS LLC CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: PHILIPS LUMILEDS LIGHTING COMPANY LLC
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • Sapphire has proven to be the preferred substrate for growing high efficiency InAlGaN light emitting devices because of its stability in the high temperature ammonia atmosphere of the epitaxial growth process.
  • sapphire is an electrical insulator with poor thermal conductivity resulting in unusual and inefficient device designs.
  • a typical LED structure grown on sapphire has two top side electrical contacts and a semitransparent metal layer to spread current over the p-contact. This contrasts with the standard vertical structure for current flow in LEDs grown on conducting substrates such as GaAs or GaP in which an electrical contact is on the top side of the semiconductor devcie and one is on the bottom.
  • the two top side contacts on the sapphire based LED reduce the usable light emitting area of the device.
  • flip-chip bonding a technique used in the micro- and optoelectronics industry to attach a device upside down onto a substrate. Since flip-chip bonding is used to improve the heat sinking of a device, removal of the substrate depends upon the device structure and conventionally the only requirements of the metallic bonding layer are that it be electrically conductive and mechanically robust.
  • a high reflectivity DBR based on this layer pair requires a total thickness significantly greater than 2.5 ⁇ m and would be difficult to grow reliably given the mismatch between AlN and GaN growth temperatures. Even though the cracking is not as great of an issue if the layers are undoped, compositional control and the AlN/GaN growth temperatures still pose great challenges to growing high reflectivity DBRs. Hence, even in applications where the DBRs do not have to conduct current, mirror stacks with reflectivities >99% in the In x Al y Ga z N material system have not been demonstrated. For this reason, dielectric-based DBR mirrors are preferred.
  • FIG. 1 illustrates a preferred embodiment of an InAlGaN light-emitting device with a bonding layer comprised of ohmic contact layers to the InAlGaN heterostructure and adhesion layers to the host substrate.
  • FIG. 2 illustrates a preferred embodiment of an InAlGaN light-emitting device with a bonding layer comprised of ohmic contact layers to the InAlGaN heterostructure and also ohmic contact layers to an electrically conducting host substrate.
  • FIG. 3 illustrates a preferred embodiment of an InAlGaN light-emitting device with opposing distributed Bragg reflector (DBR) mirror stacks on either side of the light emitting layers to form vertical cavity device.
  • the bonding layer is comprised of ohmic contact layers to the InAlGaN heterostructure and also ohmic contact layers to an electrically conducting host substrate.
  • the InAlGaN devices are defined by mesa etching through the InAlGaN device.
  • FIG. 4D Devices are finally singulated by dicing the host substrate.
  • This invention is concerned with building vertically conducting InAlGaN light emitting devices defined as devices in which the ohmic contacts to the InAlGaN device layers are on opposite sides, top & bottom, of the InAlGaN device layers.
  • FIG. 1 One preferred structure according to the present invention is shown in FIG. 1.
  • an InAlGaN light emitting device 20 is grown on a sacrificial growth substrate 30 such as sapphire.
  • the structure is grown with the p-type layer 20 a exposed.
  • a reflective ohmic contact 18 is deposited on top of the p-type InAlGaN layers 20 a .
  • the InAlGaN structure is then bonded to a host substrate 12 by means of bonding layers 16 interposing the InAlGaN light emitting layers 20 and the host substrate 12 .
  • the bonding layer 16 materials are chosen to provide a strong mechanical bond and to be electrically conductive.
  • the bonding layer includes a plurality of layers, the first bonding layer 16 a that are deposited on the InAlGaN device layers and the second bonding layers 16 b that are deposited on the host substrate.
  • the bonding layers 16 are deposited by any number of means known in the prior art, such as electron-beam evaporation, sputtering, and electroplating.
  • the sacrificial sapphire growth substrate 30 is removed via one of many substrate removal techniques as known in the prior art such as laser melting, mechanical polishing, and chemical etching of sacrificial layers.
  • the InAlGaN layers are patterned, etched, and contacted to provide for an electrical injection light emitting device.
  • the bonding layer serves as a low resistivity current spreading layer, an ohmic contact to the p-InAlGaN layers, and an adhesion layer to the host substrate.
  • the sacrificial growth substrate is removed and an n-type ohmic contact 22 is provided to the n-InAlGaN layers.
  • a vertically conductive InAlGaN light-emitting device is achieved.
  • This device exhibits excellent current spreading due to the low resistitivity of the semiconductor or metal host substrate resulting in low forward voltage and high electrical to optical conversion efficiency.
  • there is only a single ohmic contact on the top of the device and none of the active region of the device is removed during the fabrication of the second ohmic contact to the device more than 75% of the available active region is preserved for unblocked light emission compared to less than 40% in commercially available devices.
  • a DBR mirror stack 26 a is deposited to the p-InAlGaN layer 20 a in addition to the p-side ohmic contacts 18 .
  • the mirror stack can consist of one or more of the following materials: dielectric, semiconductor and metal.
  • the structure is bonded to a host substrate 12 via bonding layers 16 which provides adhesion to the host substrate 12 and electrical contact to the p-side ohmic 18 contact metals.
  • the bonding layer 16 material and thickness should be chosen to avoid compromising the DBR mirror stack reflectivity during the attachment of the host substrate.
  • a second DBR mirror stack 26 b is deposited on the InAlGaN vertical cavity optoelectronic structure on the side opposing the first mirror stack 26 a .
  • the optional second mirror stack 26 b is patterned and etched to provide areas for n-type ohmic contacts 22 .
  • the mirrors For a vertical cavity surface emitting laser, the mirrors must have very high reflectivity >99%.
  • the reflectivity requirement of the mirror(s) is relaxed (>60%).
  • the first and second substrate ohmic contacts 24 a , 24 b provide for a vertically conductive device.
  • FIG. 4 a shows InAlGaN light emitting layers 20 a and 20 b grown on a growth substrate 30 with a reflective ohmic silver contact 18 deposited on top of the p-type InAlGaN layer.
  • Silver is preferred for the p-type ohmic contact because of its high reflectivity to the wavelengths of light typically emitted from an InAlGaN light-emitting device and for its low contact resistance to p-type InAlGaN.
  • a low resistivity host substrate 12 provided with first 24 a and second 24 b ohmic contacts to facilitate vertical conduction.
  • a bonding layer 16 a may be deposited on top of the first substrate ohmic contact.
  • Silicon is preferred for the host substrate because it is easy to thin and saw into very small chips, and can have low electrical resistivity and high thermal conductivity compared to other common substrates. This method allows simple dicing of the InAlGaN devices and avoids the problems associating with dicing sapphire. It is also possible to etch mesas prior to attaching the host substrate, rather than after removal of the growth substrate.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
US09/245,503 1999-02-05 1999-02-05 Inxalygazn optical emitters fabricated via substrate removal Abandoned US20010042866A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
US09/245,503 US20010042866A1 (en) 1999-02-05 1999-02-05 Inxalygazn optical emitters fabricated via substrate removal
TW088114965A TW441137B (en) 1999-02-05 1999-08-31 InAlGaN optical emitters fabricated via substrate removal
CN99126436.3A CN1262528A (zh) 1999-02-05 1999-12-16 通过去除衬底来制备铟铝镓氮光发射器
DE10000088A DE10000088A1 (de) 1999-02-05 2000-01-04 Mittels Substratentfernung hergestellte optische In¶x¶Al¶y¶Ga¶z¶N-Emitter
JP2000023885A JP4860024B2 (ja) 1999-02-05 2000-02-01 ＩｎＸＡｌＹＧａＺＮ発光素子及びその製造方法
KR1020000005186A KR100649777B1 (ko) 1999-02-05 2000-02-02 ＩｎＡｌＧａＮ 발광 장치 및 수직 전도 ＡｌＩｎＧａＮ 발광 장치 제조 방법
GB0002753A GB2346478A (en) 1999-02-05 2000-02-07 Optical emission device
US10/631,001 US6800500B2 (en) 1999-02-05 2003-07-29 III-nitride light emitting devices fabricated by substrate removal
US11/330,209 US7491565B2 (en) 1999-02-05 2006-01-10 III-nitride light emitting devices fabricated by substrate removal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/245,503 US20010042866A1 (en) 1999-02-05 1999-02-05 Inxalygazn optical emitters fabricated via substrate removal

Related Child Applications (2)

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US10/631,001 Division US6800500B2 (en) 1999-02-05 2003-07-29 III-nitride light emitting devices fabricated by substrate removal
US11/330,209 Continuation US7491565B2 (en) 1999-02-05 2006-01-10 III-nitride light emitting devices fabricated by substrate removal

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US20010042866A1 true US20010042866A1 (en) 2001-11-22

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US09/245,503 Abandoned US20010042866A1 (en) 1999-02-05 1999-02-05 Inxalygazn optical emitters fabricated via substrate removal
US10/631,001 Expired - Lifetime US6800500B2 (en) 1999-02-05 2003-07-29 III-nitride light emitting devices fabricated by substrate removal
US11/330,209 Expired - Lifetime US7491565B2 (en) 1999-02-05 2006-01-10 III-nitride light emitting devices fabricated by substrate removal

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US10/631,001 Expired - Lifetime US6800500B2 (en) 1999-02-05 2003-07-29 III-nitride light emitting devices fabricated by substrate removal
US11/330,209 Expired - Lifetime US7491565B2 (en) 1999-02-05 2006-01-10 III-nitride light emitting devices fabricated by substrate removal

Country Status (7)

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US (3) US20010042866A1 (de)
JP (1) JP4860024B2 (de)
KR (1) KR100649777B1 (de)
CN (1) CN1262528A (de)
DE (1) DE10000088A1 (de)
GB (1) GB2346478A (de)
TW (1) TW441137B (de)

Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020141468A1 (en) * 2001-03-23 2002-10-03 Shigetoshi Ito Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus
US20030119217A1 (en) * 2001-12-20 2003-06-26 Andreas Plossl Method for fabricating semiconductor layers
US6586773B2 (en) * 2000-10-31 2003-07-01 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
US20030168664A1 (en) * 2000-05-26 2003-09-11 Berthold Hahn Light-emitting-diode chip comprising a sequence of gan-based epitaxial layer which emit radiation, and a method for producing the same
US20030189212A1 (en) * 2002-04-09 2003-10-09 Yoo Myung Cheol Method of fabricating vertical devices using a metal support film
US20030198795A1 (en) * 2002-04-17 2003-10-23 Grant William K. Modular material design system and method
US6649437B1 (en) 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
US20040026709A1 (en) * 2000-04-26 2004-02-12 Stefan Bader Gan-based light emitting-diode chip and a method for producing a luminescent diode component
US20040033638A1 (en) * 2000-10-17 2004-02-19 Stefan Bader Method for fabricating a semiconductor component based on GaN
US20040046179A1 (en) * 2001-03-09 2004-03-11 Johannes Baur Radiation-emitting semiconductor component and method for producing the semiconductor component
US20040061433A1 (en) * 2001-10-12 2004-04-01 Nichia Corporation, Corporation Of Japan Light emitting apparatus and method of manufacturing the same
US20040072383A1 (en) * 2002-07-08 2004-04-15 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
DE10245631A1 (de) * 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung
US20040099873A1 (en) * 2000-08-18 2004-05-27 Stefan Illek Semicoductor chip and method for production thereof
US20040119085A1 (en) * 2002-09-26 2004-06-24 Osram Opto Semiconductor Gmbh Radiation-emitting semiconductor element
US20040169179A1 (en) * 2003-01-31 2004-09-02 Osram Opto Semiconductors Gmbh Semiconductor substrate for optoelectronic components and method for fabricating it
US20040235210A1 (en) * 2003-05-22 2004-11-25 Matsushita Electric Industrial Co. Ltd. Method for fabricating semiconductor devices
US20040245543A1 (en) * 2003-06-04 2004-12-09 Yoo Myung Cheol Method of fabricating vertical structure compound semiconductor devices
US20050045893A1 (en) * 2003-08-28 2005-03-03 Ludowise Michael J. Resonant cavity light emitting device
US20050098792A1 (en) * 2002-04-09 2005-05-12 Jong-Lam Lee Method of fabricating vertical structure LEDs
US20050242365A1 (en) * 2004-04-28 2005-11-03 Yoo Myung C Vertical structure semiconductor devices
US20050282373A1 (en) * 2000-04-26 2005-12-22 Osram Gmbh, A Germany Corporation Radiation-emitting semiconductor element and method for producing the same
US20050286590A1 (en) * 2004-06-25 2005-12-29 Samsung Electro-Mechanics Co., Ltd. Method of producing multi-wavelength semiconductor laser device
US20050286591A1 (en) * 2004-06-25 2005-12-29 Samsung Electro-Mechanics Co., Ltd. Method of producing multi-wavelength semiconductor laser device
US20060006554A1 (en) * 2004-06-22 2006-01-12 Yoo Myung C Vertical structure semiconductor devices with improved light output
US20060105542A1 (en) * 2004-11-15 2006-05-18 Yoo Myung C Method for fabricating and separating semiconductor devices
EP1681712A1 (de) * 2005-01-13 2006-07-19 S.O.I. Tec Silicon on Insulator Technologies S.A. Verfahren zur Herstellung von Substraten für Optoelektronischen Anwendungen
US20060189098A1 (en) * 2005-02-23 2006-08-24 Cree, Inc. Substrate removal process for high light extraction LEDs
US20060202211A1 (en) * 2002-06-25 2006-09-14 Matsushita Electric Industrial Co., Ltd. Method for fabricating light-emitting device utilizing substrate transfer by laser decomposition
US20060289875A1 (en) * 2005-06-22 2006-12-28 United Epitaxy Company, Ltd. Light emitting diode and method making the same
US20070057273A1 (en) * 2001-10-26 2007-03-15 Yoo Myung C Diode having vertical structure and method of manufacturing the same
US20070221944A1 (en) * 2005-11-15 2007-09-27 Myung Cheol Yoo Light emitting diodes and fabrication methods thereof
WO2007133766A2 (en) * 2006-05-15 2007-11-22 The Regents Of The University Of California Electrically-pumped (ga,in, ai) n vertical-cavity surface-emitting laser
US20070290215A1 (en) * 2006-06-19 2007-12-20 Sanken Electric Co., Ltd. Light-emitting semiconductor device protected against reflector metal migration, and method of fabrication
US20080210970A1 (en) * 2003-09-19 2008-09-04 Tinggi Technologies Private Limited Fabrication of Conductive Metal Layer on Semiconductor Devices
US20090068776A1 (en) * 2003-01-31 2009-03-12 Osram Opto Semiconductors Gmbh Method for fabricating semiconductor substrate for optoelectronic components
US20090261373A1 (en) * 2006-05-19 2009-10-22 Shum Frank T Low optical loss electrode structures for leds
US20090309118A1 (en) * 2005-07-31 2009-12-17 Samsung Electronics Co., Ltd Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same
US20100207096A1 (en) * 2008-03-26 2010-08-19 Lattice Power (Jiangxi) Corporation Method for fabricating highly reflective ohmic contact in light-emitting devices
US20100213495A1 (en) * 2006-05-19 2010-08-26 Shum Frank T Electrode structures for leds with increased active area
US20110114983A1 (en) * 2008-04-28 2011-05-19 Advanced Optoelectronic Technology, Inc. Photoelectric device having group iii nitride semiconductor
US7956364B2 (en) 2002-06-26 2011-06-07 Lg Electronics Inc. Thin film light emitting diode
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9450152B2 (en) * 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US9595616B1 (en) * 2015-12-02 2017-03-14 Sandia Corporation Vertical III-nitride thin-film power diode

Families Citing this family (219)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000323797A (ja) * 1999-05-10 2000-11-24 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
DE10026254A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer auf GaN basierenden strahlungsemittierenden Epitaxieschichtenfolge
DE10026255A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Lumineszenzdiosdenchip auf der Basis von GaN und Verfahren zum Herstellen eines Lumineszenzdiodenbauelements mit einem Lumineszenzdiodenchip auf der Basis von GaN
DE10020464A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US6525335B1 (en) * 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US6576932B2 (en) * 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
JP2003031844A (ja) * 2001-07-11 2003-01-31 Sony Corp 半導体発光素子の製造方法
KR100482174B1 (ko) * 2001-08-08 2005-04-13 삼성전기주식회사 기판제거 기술을 이용한 GaN계 LED 제작 방법
DE10254457B4 (de) * 2001-12-20 2007-04-26 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer von einem Träger abgelösten Halbleiterschicht
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
US6869820B2 (en) * 2002-01-30 2005-03-22 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
DE10208170B8 (de) * 2002-02-26 2013-07-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit einer vertikalen Emissionsrichtung und dessen Herstellungsverfahren
JP4233268B2 (ja) * 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
ES2378067T3 (es) 2002-05-08 2012-04-04 Phoseon Technology, Inc. Fuente de luz de estado sólido de alta eficacia y métodos de uso y fabricación
US6967981B2 (en) 2002-05-30 2005-11-22 Xerox Corporation Nitride based semiconductor structures with highly reflective mirrors
US7928455B2 (en) * 2002-07-15 2011-04-19 Epistar Corporation Semiconductor light-emitting device and method for forming the same
DE10245628A1 (de) 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
KR100506730B1 (ko) * 2002-12-10 2005-08-08 삼성전기주식회사 발광 다이오드의 제조방법
KR100495215B1 (ko) 2002-12-27 2005-06-14 삼성전기주식회사 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법
TWI226138B (en) * 2003-01-03 2005-01-01 Super Nova Optoelectronics Cor GaN-based LED vertical device structure and the manufacturing method thereof
JP4217093B2 (ja) * 2003-03-27 2009-01-28 スタンレー電気株式会社 半導体発光素子及びその製造方法
US20040259279A1 (en) 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US7105861B2 (en) * 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US7262550B2 (en) 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7211831B2 (en) 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7521854B2 (en) * 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7084434B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Uniform color phosphor-coated light-emitting diode
US7274043B2 (en) * 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US6831302B2 (en) 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7074631B2 (en) * 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7667238B2 (en) * 2003-04-15 2010-02-23 Luminus Devices, Inc. Light emitting devices for liquid crystal displays
EP2264798B1 (de) 2003-04-30 2020-10-14 Cree, Inc. Hochleistungs-Lichtemitter-Verkapselungen mit kompakter Optik
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
EP1712662A4 (de) * 2003-06-30 2009-12-02 Kenichiro Miyahara Substrat für die herstellung von dünnen filmen, substrat für dünne filme und licht emittierendes element
US8999736B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
US7172745B1 (en) * 2003-07-25 2007-02-06 Chien-Min Sung Synthesis of diamond particles in a metal matrix
US7344903B2 (en) 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7341880B2 (en) * 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
EP1678442B8 (de) 2003-10-31 2013-06-26 Phoseon Technology, Inc. LED-Lichtmodul und Herstellungsverfahren
US7524085B2 (en) 2003-10-31 2009-04-28 Phoseon Technology, Inc. Series wiring of highly reliable light sources
US7450311B2 (en) 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
EP1706893A2 (de) 2003-12-24 2006-10-04 Gelcore LLC Laser-abhebung von saphir von einem nitrid-flipchip
KR101014720B1 (ko) * 2004-01-19 2011-02-16 엘지전자 주식회사 반도체 레이저 다이오드 제조 방법
US6884646B1 (en) * 2004-03-10 2005-04-26 Uni Light Technology Inc. Method for forming an LED device with a metallic substrate
WO2005091392A1 (en) 2004-03-18 2005-09-29 Phoseon Technology, Inc. Micro-reflectors on a substrate for high-density led array
TWI257718B (en) * 2004-03-18 2006-07-01 Phoseon Technology Inc Direct cooling of LEDs
WO2005094390A2 (en) * 2004-03-30 2005-10-13 Phoseon Technology, Inc. Led array having array-based led detectors
ATE503963T1 (de) * 2004-04-12 2011-04-15 Phoseon Technology Inc Hochdichtes led-array
US8077305B2 (en) * 2004-04-19 2011-12-13 Owen Mark D Imaging semiconductor structures using solid state illumination
US7897423B2 (en) * 2004-04-29 2011-03-01 Osram Opto Semiconductors Gmbh Method for production of a radiation-emitting semiconductor chip
US7332365B2 (en) * 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
KR100593912B1 (ko) * 2004-06-04 2006-06-30 삼성전기주식회사 질화갈륨계 반도체 발광소자 및 그 제조 방법
CN101032034A (zh) * 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
TWI266435B (en) * 2004-07-08 2006-11-11 Sharp Kk Nitride-based compound semiconductor light emitting device and fabricating method thereof
US8728937B2 (en) 2004-07-30 2014-05-20 Osram Opto Semiconductors Gmbh Method for producing semiconductor chips using thin film technology
WO2006012838A2 (de) * 2004-07-30 2006-02-09 Osram Opto Semiconductors Gmbh Verfahren zur herstellung von halbleiterchips in dünnfilmtechnik und halbleiterchip in dünnfilmtechnik
US20060038188A1 (en) 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device
JP2006073619A (ja) * 2004-08-31 2006-03-16 Sharp Corp 窒化物系化合物半導体発光素子
JP4371956B2 (ja) * 2004-09-02 2009-11-25 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP4814503B2 (ja) * 2004-09-14 2011-11-16 スタンレー電気株式会社 半導体素子とその製造方法、及び電子部品ユニット
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
KR100667508B1 (ko) * 2004-11-08 2007-01-10 엘지전자 주식회사 발광 소자 및 그의 제조방법
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
KR101288758B1 (ko) 2004-12-30 2013-07-23 포세온 테크날러지 인코퍼레이티드 산업 공정에서 광원을 사용하는 시스템 및 방법
US8012774B2 (en) * 2005-01-11 2011-09-06 SemiLEDs Optoelectronics Co., Ltd. Coating process for a light-emitting diode (LED)
US7897420B2 (en) * 2005-01-11 2011-03-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diodes (LEDs) with improved light extraction by roughening
US7473936B2 (en) * 2005-01-11 2009-01-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US7524686B2 (en) * 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US9130114B2 (en) 2005-01-11 2015-09-08 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication
US8871547B2 (en) 2005-01-11 2014-10-28 SemiLEDs Optoelectronics Co., Ltd. Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate
US8802465B2 (en) 2005-01-11 2014-08-12 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
US8680534B2 (en) 2005-01-11 2014-03-25 Semileds Corporation Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light
US20060151801A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler
US7413918B2 (en) 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US7432119B2 (en) * 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
US7563625B2 (en) * 2005-01-11 2009-07-21 SemiLEDs Optoelectronics Co., Ltd. Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
US20060154393A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Systems and methods for removing operating heat from a light emitting diode
US7646033B2 (en) * 2005-01-11 2010-01-12 Semileds Corporation Systems and methods for producing white-light light emitting diodes
US7186580B2 (en) * 2005-01-11 2007-03-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
TWI352437B (en) * 2007-08-27 2011-11-11 Epistar Corp Optoelectronic semiconductor device
US20070045640A1 (en) 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
US8748923B2 (en) * 2005-03-14 2014-06-10 Philips Lumileds Lighting Company Llc Wavelength-converted semiconductor light emitting device
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US7804100B2 (en) * 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
JP4767035B2 (ja) * 2005-04-12 2011-09-07 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
CN100372137C (zh) * 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
US7736945B2 (en) * 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
US7754507B2 (en) * 2005-06-09 2010-07-13 Philips Lumileds Lighting Company, Llc Method of removing the growth substrate of a semiconductor light emitting device
KR100599012B1 (ko) * 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
TWI422044B (zh) * 2005-06-30 2014-01-01 Cree Inc 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
TWI253770B (en) * 2005-07-11 2006-04-21 Univ Nat Central Light emitting diode and manufacturing method thereof
US8674375B2 (en) * 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
KR100720101B1 (ko) * 2005-08-09 2007-05-18 삼성전자주식회사 나노구조의 다기능성 오믹층을 사용한 탑에미트형 질화물계발광소자 및 그 제조방법
KR20070038793A (ko) * 2005-10-07 2007-04-11 에피밸리 주식회사 반도체 소자의 제조 방법
US8614449B1 (en) * 2005-10-11 2013-12-24 SemiLEDs Optoelectronics Co., Ltd. Protection for the epitaxial structure of metal devices
CN100474642C (zh) * 2005-10-27 2009-04-01 晶能光电（江西）有限公司 含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法
JP2007165409A (ja) * 2005-12-09 2007-06-28 Rohm Co Ltd 半導体発光素子及び半導体発光素子の製造方法
KR20090009772A (ko) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치
US7642527B2 (en) 2005-12-30 2010-01-05 Phoseon Technology, Inc. Multi-attribute light effects for use in curing and other applications involving photoreactions and processing
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US8264138B2 (en) 2006-01-20 2012-09-11 Cree, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
DE102006008929A1 (de) * 2006-02-23 2007-08-30 Azzurro Semiconductors Ag Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung
US20090001402A1 (en) * 2006-03-22 2009-01-01 Rohm Co., Ltd. Semiconductor element and method of making the same
JP4969120B2 (ja) * 2006-03-22 2012-07-04 ローム株式会社 半導体発光素子
EP2011164B1 (de) 2006-04-24 2018-08-29 Cree, Inc. Seitwärts emittierende oberflächenmontierte weisse led
WO2007139894A2 (en) 2006-05-26 2007-12-06 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
US8596819B2 (en) 2006-05-31 2013-12-03 Cree, Inc. Lighting device and method of lighting
TWI305960B (en) * 2006-06-16 2009-02-01 Opto Tech Corp Light emitting diode and method manufacturing the same
DE102006060410A1 (de) * 2006-06-30 2008-01-03 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip
US7885306B2 (en) * 2006-06-30 2011-02-08 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser chip
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
CN100437910C (zh) * 2006-07-27 2008-11-26 中国科学院半导体研究所 用MBE外延InAlGaN单晶薄膜的方法
US7915624B2 (en) * 2006-08-06 2011-03-29 Lightwave Photonics, Inc. III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
CN101554089A (zh) * 2006-08-23 2009-10-07 科锐Led照明科技公司 照明装置和照明方法
JP2008091862A (ja) * 2006-09-08 2008-04-17 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
EP2070123A2 (de) 2006-10-02 2009-06-17 Illumitex, Inc. Led-system und -verfahren
JP2008117824A (ja) * 2006-11-01 2008-05-22 Sharp Corp 窒化物系半導体素子の製造方法
JP4985930B2 (ja) * 2006-11-08 2012-07-25 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP2008130799A (ja) * 2006-11-21 2008-06-05 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
US9310026B2 (en) 2006-12-04 2016-04-12 Cree, Inc. Lighting assembly and lighting method
CN101622493A (zh) * 2006-12-04 2010-01-06 科锐Led照明科技公司 照明装置和照明方法
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
US8110425B2 (en) 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
DE102007019776A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
JP5431320B2 (ja) 2007-07-17 2014-03-05 クリー インコーポレイテッド 内部光学機能を備えた光学素子およびその製造方法
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US8617997B2 (en) * 2007-08-21 2013-12-31 Cree, Inc. Selective wet etching of gold-tin based solder
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
EP2203938A1 (de) * 2007-10-26 2010-07-07 Cree Led Lighting Solutions, Inc. Beleuchtungseinrichtung mit einem oder mehreren lumiphoren und herstellungsverfahren dafür
US7846751B2 (en) * 2007-11-19 2010-12-07 Wang Nang Wang LED chip thermal management and fabrication methods
TW200931690A (en) * 2007-11-30 2009-07-16 Univ California Light output enhanced gallium nitride based thin light emitting diode
US20090218588A1 (en) * 2007-12-06 2009-09-03 Paul Panaccione Chip-scale packaged light-emitting devices
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US7829358B2 (en) 2008-02-08 2010-11-09 Illumitex, Inc. System and method for emitter layer shaping
US7842939B2 (en) 2008-02-25 2010-11-30 Lightwave Photonics, Inc. Current-injecting/tunneling light-emitting device and method
CN101257076B (zh) * 2008-03-27 2011-03-23 鹤山丽得电子实业有限公司 发光二极管的制造方法
US20090250713A1 (en) * 2008-04-04 2009-10-08 Philips Lumileds Lighting Company, Llc Reflective Contact for a Semiconductor Light Emitting Device
US8884321B2 (en) * 2008-04-06 2014-11-11 Lg Innotek Co., Ltd. Luminous element
US8664747B2 (en) * 2008-04-28 2014-03-04 Toshiba Techno Center Inc. Trenched substrate for crystal growth and wafer bonding
US8815618B2 (en) * 2008-08-29 2014-08-26 Tsmc Solid State Lighting Ltd. Light-emitting diode on a conductive substrate
TWI389347B (zh) * 2008-11-13 2013-03-11 Epistar Corp 光電元件及其製作方法
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
TWI469382B (zh) * 2009-03-30 2015-01-11 Ind Tech Res Inst 發光二極體結構與元件以及其製造方法
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US8207547B2 (en) 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
US8507304B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
US8148241B2 (en) * 2009-07-31 2012-04-03 Applied Materials, Inc. Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
TWI405409B (zh) * 2009-08-27 2013-08-11 Novatek Microelectronics Corp 低電壓差動訊號輸出級
CN102630288B (zh) 2009-09-25 2015-09-09 科锐公司 具有低眩光和高亮度级均匀性的照明设备
US8525221B2 (en) 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
EP2330697A1 (de) * 2009-12-07 2011-06-08 S.O.I.Tec Silicon on Insulator Technologies Halbleitervorrichtung mit einer InGaN-Schicht
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
KR101158074B1 (ko) * 2010-05-19 2012-06-22 서울옵토디바이스주식회사 발광 소자
AU2011268135B2 (en) 2010-06-18 2014-06-12 Glo Ab Nanowire LED structure and method for manufacturing the same
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN101964385B (zh) 2010-10-28 2012-08-29 映瑞光电科技(上海)有限公司 发光二极管及其形成方法
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US20130026480A1 (en) 2011-07-25 2013-01-31 Bridgelux, Inc. Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US20130032810A1 (en) 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8669585B1 (en) 2011-09-03 2014-03-11 Toshiba Techno Center Inc. LED that has bounding silicon-doped regions on either side of a strain release layer
US8558247B2 (en) 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
US8912021B2 (en) 2011-09-12 2014-12-16 SemiLEDs Optoelectronics Co., Ltd. System and method for fabricating light emitting diode (LED) dice with wavelength conversion layers
US8841146B2 (en) 2011-09-12 2014-09-23 SemiLEDs Optoelectronics Co., Ltd. Method and system for fabricating light emitting diode (LED) dice with wavelength conversion layers having controlled color characteristics
US8492746B2 (en) 2011-09-12 2013-07-23 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) dice having wavelength conversion layers
US8410508B1 (en) 2011-09-12 2013-04-02 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) package having wavelength conversion member and wafer level fabrication method
US8350251B1 (en) 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8581267B2 (en) 2011-11-09 2013-11-12 Toshiba Techno Center Inc. Series connected segmented LED
US8552465B2 (en) 2011-11-09 2013-10-08 Toshiba Techno Center Inc. Method for reducing stress in epitaxial growth
CN102570309B (zh) * 2012-02-14 2013-04-17 中国科学院半导体研究所 采用选区生长有源区的硅基850nm激光器的制备方法
KR101229814B1 (ko) 2012-02-29 2013-02-04 서울옵토디바이스주식회사 발광 소자
US9608145B2 (en) * 2012-03-14 2017-03-28 Robbie J. Jorgenson Materials, structures, and methods for optical and electrical III-nitride semiconductor devices
CN103227265B (zh) * 2013-04-12 2015-08-19 厦门大学 一种氮化镓基垂直腔面发射激光器的制作方法
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
KR102123039B1 (ko) * 2013-07-19 2020-06-15 니치아 카가쿠 고교 가부시키가이샤 발광 장치 및 그 제조 방법
US10263144B2 (en) 2015-10-16 2019-04-16 Robbie J. Jorgenson System and method for light-emitting devices on lattice-matched metal substrates
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
KR102474696B1 (ko) * 2016-05-04 2022-12-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 제조 방법
KR102383837B1 (ko) 2016-05-26 2022-04-07 로비 조젠슨 3a족 질화물 성장 시스템 및 방법
KR102209661B1 (ko) * 2016-09-19 2021-01-28 애플 인크. 실리콘 제어 백플레인 상에 통합된 수직 이미터
CN106449955A (zh) * 2016-11-17 2017-02-22 映瑞光电科技(上海)有限公司 一种垂直结构发光二极管及其制造方法
CN108133993A (zh) * 2018-01-30 2018-06-08 广东工业大学 一种紫外led垂直芯片结构
CN108550666A (zh) * 2018-05-02 2018-09-18 天津三安光电有限公司 倒装四元系发光二极管外延结构、倒装四元系发光二极管及其生长方法
FR3146242A1 (fr) * 2023-02-27 2024-08-30 Soitec Structure semi-conductrice pour former des diodes laser a cavite verticale

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222868B1 (en) * 1997-09-30 2001-04-24 Canon Kabushiki Kaisha Surface-type optical device, fabrication method therefor and display device
US6261859B1 (en) * 1997-08-05 2001-07-17 Canon Kabushiki Kaisha Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2423869A1 (fr) 1978-04-21 1979-11-16 Radiotechnique Compelec Dispositif semiconducteur electroluminescent a recyclage de photons
US4243966A (en) * 1979-04-16 1981-01-06 General Electric Company Electrostatic shielding of nonsequential disc windings in transformers
DE3041358A1 (de) 1980-11-03 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Lichtreflektirender ohmscher kontakt fuer bauelemente
JPH0770474B2 (ja) * 1985-02-08 1995-07-31 株式会社東芝 化合物半導体装置の製造方法
US5196375A (en) * 1987-07-24 1993-03-23 Kabushiki Kaisha Toshiba Method for manufacturing bonded semiconductor body
US5004705A (en) * 1989-01-06 1991-04-02 Unitrode Corporation Inverted epitaxial process
CA2037198C (en) 1990-02-28 1996-04-23 Katsuhide Manabe Light-emitting semiconductor device using gallium nitride group compound
NL9000972A (nl) * 1990-04-24 1991-11-18 Philips Nv Werkwijze voor het vervaardigen van een silicium lichaam met een n-type toplaag en een daaraan grenzende, hoger gedoteerde n-type basislaag.
US5390210A (en) * 1993-11-22 1995-02-14 Hewlett-Packard Company Semiconductor laser that generates second harmonic light with attached nonlinear crystal
JPH07202265A (ja) * 1993-12-27 1995-08-04 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体の製造方法
JPH07273366A (ja) * 1994-03-28 1995-10-20 Pioneer Electron Corp Ｉｉｉ族窒化物発光素子の製造方法
UA49803C2 (uk) * 1994-06-03 2002-10-15 Дж.Д. Сьорль Енд Ко Спосіб лікування ретровірусних інфекцій
JP3717196B2 (ja) * 1994-07-19 2005-11-16 豊田合成株式会社 発光素子
US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
JP3605907B2 (ja) * 1994-10-28 2004-12-22 三菱化学株式会社 コンタクト抵抗低減層を有する半導体装置
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JPH08167735A (ja) * 1994-12-12 1996-06-25 Hitachi Cable Ltd 発光素子
JP3460181B2 (ja) * 1995-06-13 2003-10-27 松下電器産業株式会社 垂直共振器型発光素子及びその製造方法
JP3259811B2 (ja) * 1995-06-15 2002-02-25 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
US6277696B1 (en) * 1995-06-27 2001-08-21 Hewlett-Packard Company Surface emitting laser using two wafer bonded mirrors
DE19536434C2 (de) 1995-09-29 2001-11-15 Siemens Ag Verfahren zum Herstellen eines Halbleiterlaser-Bauelements
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
US5985687A (en) * 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
JP3106956B2 (ja) * 1996-05-23 2000-11-06 住友化学工業株式会社 化合物半導体用電極材料
US5708280A (en) * 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication
JP3239774B2 (ja) * 1996-09-20 2001-12-17 豊田合成株式会社 ３族窒化物半導体発光素子の基板分離方法
DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
US5838707A (en) * 1996-12-27 1998-11-17 Motorola, Inc. Ultraviolet/visible light emitting vertical cavity surface emitting laser and method of fabrication
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
JPH10275936A (ja) * 1997-03-28 1998-10-13 Rohm Co Ltd 半導体発光素子の製法
CN1159750C (zh) * 1997-04-11 2004-07-28 日亚化学工业株式会社 氮化物半导体的生长方法
DE19715572A1 (de) 1997-04-15 1998-10-22 Telefunken Microelectron Verfahren zum Herstellen von epitaktischen Schichten eines Verbindungshalbleiters auf einkristallinem Silizium und daraus hergestellte Leuchtdiode
JP3220977B2 (ja) * 1997-05-07 2001-10-22 日亜化学工業株式会社 窒化物半導体レーザ素子及び窒化物半導体レーザ素子の製造方法。
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
EP0905797B1 (de) * 1997-09-29 2010-02-10 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
US5952681A (en) * 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
EP1928034A3 (de) * 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Lichtemittierende Vorrichtung
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6136623A (en) * 1998-05-06 2000-10-24 Xerox Corporation Multiple wavelength laser arrays by flip-chip bonding
JP3723347B2 (ja) * 1998-06-04 2005-12-07 ローム株式会社 半導体発光素子の製法
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
JP3262080B2 (ja) 1998-09-25 2002-03-04 株式会社村田製作所 半導体発光素子
US6376269B1 (en) 1999-02-02 2002-04-23 Agilent Technologies, Inc. Vertical cavity surface emitting laser (VCSEL) using buried Bragg reflectors and method for producing same
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261859B1 (en) * 1997-08-05 2001-07-17 Canon Kabushiki Kaisha Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device
US6222868B1 (en) * 1997-09-30 2001-04-24 Canon Kabushiki Kaisha Surface-type optical device, fabrication method therefor and display device

Cited By (189)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070012944A1 (en) * 2000-04-26 2007-01-18 Stefan Bader GaN-based light emitting-diode chip and a method for producing same
US20050282373A1 (en) * 2000-04-26 2005-12-22 Osram Gmbh, A Germany Corporation Radiation-emitting semiconductor element and method for producing the same
US7691659B2 (en) 2000-04-26 2010-04-06 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US20040026709A1 (en) * 2000-04-26 2004-02-12 Stefan Bader Gan-based light emitting-diode chip and a method for producing a luminescent diode component
US7319247B2 (en) 2000-04-26 2008-01-15 Osram Gmbh Light emitting-diode chip and a method for producing same
US20070221936A1 (en) * 2000-05-26 2007-09-27 Osram Gmbh Light-emitting-diode chip comprising a sequence of gan-based epitaxial layers which emit radiation and a method for producing the same
US20110175058A1 (en) * 2000-05-26 2011-07-21 Berthold Hahn LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GaN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME
US20030168664A1 (en) * 2000-05-26 2003-09-11 Berthold Hahn Light-emitting-diode chip comprising a sequence of gan-based epitaxial layer which emit radiation, and a method for producing the same
US7939844B2 (en) 2000-05-26 2011-05-10 Osram Gmbh Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
US8436393B2 (en) 2000-05-26 2013-05-07 Osram Gmbh Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
US7265392B2 (en) 2000-05-26 2007-09-04 Osram Gmbh Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
US7678591B2 (en) * 2000-08-18 2010-03-16 Osram Gmbh Semicoductor chip and method for production thereof
US20040099873A1 (en) * 2000-08-18 2004-05-27 Stefan Illek Semicoductor chip and method for production thereof
US20100200864A1 (en) * 2000-10-17 2010-08-12 Osram Gmbh Method for Fabricating a Semiconductor Component Based on GaN
US8129209B2 (en) 2000-10-17 2012-03-06 Osram Ag Method for fabricating a semiconductor component based on GaN
US20040033638A1 (en) * 2000-10-17 2004-02-19 Stefan Bader Method for fabricating a semiconductor component based on GaN
US7691656B2 (en) 2000-10-17 2010-04-06 Osram Gmbh Method for fabricating a semiconductor component based on GaN
US8809086B2 (en) 2000-10-17 2014-08-19 Osram Gmbh Method for fabricating a semiconductor component based on GaN
US6846686B2 (en) 2000-10-31 2005-01-25 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of manufacturing the same
US6586773B2 (en) * 2000-10-31 2003-07-01 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
US20030201449A1 (en) * 2000-10-31 2003-10-30 Ryo Saeki Semiconductor light-emitting device and method of manufacturing the same
US8138511B2 (en) 2001-03-09 2012-03-20 Osram Ag Radiation-emitting semiconductor component and method for producing the semiconductor component
US7169632B2 (en) * 2001-03-09 2007-01-30 Osram Gmbh Radiation-emitting semiconductor component and method for producing the semiconductor component
US20040046179A1 (en) * 2001-03-09 2004-03-11 Johannes Baur Radiation-emitting semiconductor component and method for producing the semiconductor component
US20020141468A1 (en) * 2001-03-23 2002-10-03 Shigetoshi Ito Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus
US6865201B2 (en) * 2001-03-23 2005-03-08 Sharp Kabushiki Kaisha Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus
US7301175B2 (en) 2001-10-12 2007-11-27 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7390684B2 (en) 2001-10-12 2008-06-24 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US20060267042A1 (en) * 2001-10-12 2006-11-30 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US20040061433A1 (en) * 2001-10-12 2004-04-01 Nichia Corporation, Corporation Of Japan Light emitting apparatus and method of manufacturing the same
US7863638B2 (en) 2001-10-26 2011-01-04 Lg Electroncis Inc. Diode having vertical structure and method of manufacturing the same
US10032959B2 (en) 2001-10-26 2018-07-24 Lg Innotek Co., Ltd. Diode having vertical structure
US7821021B2 (en) 2001-10-26 2010-10-26 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US20110049470A1 (en) * 2001-10-26 2011-03-03 Yoo Myung Cheol Diode having vertical structure and method of manufacturing the same
US9620677B2 (en) 2001-10-26 2017-04-11 Lg Innotek Co., Ltd. Diode having vertical structure
US9000468B2 (en) 2001-10-26 2015-04-07 Lg Innotek Co., Ltd. Diode having vertical structure
US7915632B2 (en) 2001-10-26 2011-03-29 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US20070057273A1 (en) * 2001-10-26 2007-03-15 Yoo Myung C Diode having vertical structure and method of manufacturing the same
US10326055B2 (en) 2001-10-26 2019-06-18 Lg Innotek Co., Ltd. Diode having vertical structure
US8008681B2 (en) 2001-10-26 2011-08-30 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US8592846B2 (en) 2001-10-26 2013-11-26 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US6770542B2 (en) 2001-12-20 2004-08-03 Osram Opto Semiconductors Gmbh Method for fabricating semiconductor layers
US20030119217A1 (en) * 2001-12-20 2003-06-26 Andreas Plossl Method for fabricating semiconductor layers
US10147847B2 (en) 2002-04-09 2018-12-04 Lg Innotek Co., Ltd. Vertical topology light emitting device
US8022386B2 (en) * 2002-04-09 2011-09-20 Lg Electronics Inc. Vertical topology light emitting device
US20030189212A1 (en) * 2002-04-09 2003-10-09 Yoo Myung Cheol Method of fabricating vertical devices using a metal support film
US8669587B2 (en) 2002-04-09 2014-03-11 Lg Innotek Co., Ltd. Vertical topology light emitting device
US20070018173A1 (en) * 2002-04-09 2007-01-25 Yoo Myung C Method of fabricating vertical devices using a metal support film
US8809898B2 (en) 2002-04-09 2014-08-19 Lg Innotek Co., Ltd. Method of fabricating vertical structure LEDs
US8896017B2 (en) 2002-04-09 2014-11-25 Lg Innotek Co., Ltd. Vertical structure LEDs
US8564016B2 (en) 2002-04-09 2013-10-22 Lg Electronics Inc. Vertical topology light emitting device
US9000477B2 (en) 2002-04-09 2015-04-07 Lg Innotek Co., Ltd. Vertical topology light-emitting device
US7250638B2 (en) * 2002-04-09 2007-07-31 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US9209360B2 (en) 2002-04-09 2015-12-08 Lg Innotek Co., Ltd. Vertical topology light-emitting device
US9224907B2 (en) 2002-04-09 2015-12-29 Lg Innotek Co., Ltd. Vertical structure LEDs
US20060099730A1 (en) * 2002-04-09 2006-05-11 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US8384120B2 (en) 2002-04-09 2013-02-26 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US8368115B2 (en) 2002-04-09 2013-02-05 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20060097277A1 (en) * 2002-04-09 2006-05-11 Yoo Myung C Method of fabricating vertical devices using a metal support film
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20060071230A1 (en) * 2002-04-09 2006-04-06 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US20080001166A1 (en) * 2002-04-09 2008-01-03 Jong-Lam Lee Method of fabricating vertical structure leds
US9472727B2 (en) 2002-04-09 2016-10-18 Lg Innotek Co., Ltd. Vertical structure LEDs
US9478709B2 (en) 2002-04-09 2016-10-25 Lg Innotek Co., Ltd. Vertical topology light emitting device
US8106417B2 (en) 2002-04-09 2012-01-31 Lg Electronics Inc. Vertical topology light emitting device using a conductive support structure
US20080064132A1 (en) * 2002-04-09 2008-03-13 Yoo Myung C Method of fabricating vertical devices using a metal support film
US20060244001A1 (en) * 2002-04-09 2006-11-02 Lg Electronic Inc. Method of fabricating vertical structure LEDs
US9847455B2 (en) 2002-04-09 2017-12-19 Lg Innotek Co., Ltd. Vertical topology light emitting device
US9882084B2 (en) 2002-04-09 2018-01-30 Lg Innotek Co., Ltd. Vertical structure LEDs
US20110193128A1 (en) * 2002-04-09 2011-08-11 Jong Lam Lee Method of fabricating vertical structure leds
US20050098792A1 (en) * 2002-04-09 2005-05-12 Jong-Lam Lee Method of fabricating vertical structure LEDs
US20090278161A1 (en) * 2002-04-09 2009-11-12 Jong-Lam Lee Method of fabricating vertical structure LEDs
US7928465B2 (en) 2002-04-09 2011-04-19 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US10243101B2 (en) 2002-04-09 2019-03-26 Lg Innotek Co., Ltd. Vertical structure LEDs
US10453998B2 (en) 2002-04-09 2019-10-22 Lg Innotek Co. Ltd. Vertical topology light emitting device
US10453993B1 (en) 2002-04-09 2019-10-22 Lg Innotek Co., Ltd. Vertical structure LEDs
US7462881B2 (en) 2002-04-09 2008-12-09 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US20100308368A1 (en) * 2002-04-09 2010-12-09 Jong-Lam Lee Method of fabricating vertical structure leds
US10461217B2 (en) 2002-04-09 2019-10-29 Lg Innotek Co., Ltd. Vertical structure LEDs
US7588952B2 (en) * 2002-04-09 2009-09-15 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US7816705B2 (en) 2002-04-09 2010-10-19 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US20090072264A1 (en) * 2002-04-09 2009-03-19 Yoo Myung Cheol Method of fabricating vertical Devices using a metal support film
US10600933B2 (en) 2002-04-09 2020-03-24 Lg Innotek Co., Ltd. Vertical structure LEDs
US7772020B2 (en) 2002-04-09 2010-08-10 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US7563629B2 (en) 2002-04-09 2009-07-21 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US7569865B2 (en) * 2002-04-09 2009-08-04 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US10644200B2 (en) 2002-04-09 2020-05-05 Lg Innotek Co., Ltd. Vertical topology light emitting device
US7576368B2 (en) 2002-04-09 2009-08-18 Lg Electronics Inc. Method of fabricating vertical structure LEDs
US20030198795A1 (en) * 2002-04-17 2003-10-23 Grant William K. Modular material design system and method
US20090045431A1 (en) * 2002-06-25 2009-02-19 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device having a current-blocking layer formed between a semiconductor multilayer film and a metal film and located at the periphery. , method for fabricating the same and method for bonding the same
US20060202211A1 (en) * 2002-06-25 2006-09-14 Matsushita Electric Industrial Co., Ltd. Method for fabricating light-emitting device utilizing substrate transfer by laser decomposition
US8445921B2 (en) 2002-06-26 2013-05-21 Lg Electronics, Inc. Thin film light emitting diode
US9281454B2 (en) 2002-06-26 2016-03-08 Lg Innotek Co., Ltd. Thin film light emitting diode
US7956364B2 (en) 2002-06-26 2011-06-07 Lg Electronics Inc. Thin film light emitting diode
US10825962B2 (en) 2002-06-26 2020-11-03 Lg Innotek Co., Ltd. Thin film light emitting diode
US8384091B2 (en) 2002-06-26 2013-02-26 Lg Electronics Inc. Thin film light emitting diode
US9716213B2 (en) 2002-06-26 2017-07-25 Lg Innotek Co., Ltd. Thin film light emitting diode
US8288787B2 (en) 2002-06-26 2012-10-16 Lg Electronics, Inc. Thin film light emitting diode
US8207552B2 (en) 2002-06-26 2012-06-26 Lg Electronics Inc. Thin film light emitting diode
US10326059B2 (en) 2002-06-26 2019-06-18 Lg Innotek Co., Ltd. Thin film light emitting diode
US20040072383A1 (en) * 2002-07-08 2004-04-15 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US7105857B2 (en) 2002-07-08 2006-09-12 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US8030665B2 (en) 2002-07-08 2011-10-04 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US7378334B2 (en) 2002-07-08 2008-05-27 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US20060128118A1 (en) * 2002-07-08 2006-06-15 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US6649437B1 (en) 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
US20040119085A1 (en) * 2002-09-26 2004-06-24 Osram Opto Semiconductor Gmbh Radiation-emitting semiconductor element
US7446341B2 (en) * 2002-09-26 2008-11-04 Osram Gmbh Radiation-emitting semiconductor element
US20060065905A1 (en) * 2002-09-30 2006-03-30 Dominik Eisert Semiconductor component and production method
US7208337B2 (en) 2002-09-30 2007-04-24 Osram Opto Semiconductors Gmbh Method of forming light emitting devices including forming mesas and singulating
DE10245631A1 (de) * 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung
US7557381B2 (en) 2002-09-30 2009-07-07 Osram Opto Semiconductor Gmbh Semiconductor component
DE10245631B4 (de) 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
US20070181891A1 (en) * 2002-09-30 2007-08-09 Dominik Eisert Semiconductor component
US20040169179A1 (en) * 2003-01-31 2004-09-02 Osram Opto Semiconductors Gmbh Semiconductor substrate for optoelectronic components and method for fabricating it
US7446346B2 (en) 2003-01-31 2008-11-04 Osram Opto Semiconductor Gmbh Semiconductor substrate for optoelectronic components and method for fabricating it
US8658446B2 (en) 2003-01-31 2014-02-25 Osram Opto Semiconductors Gmbh Method for fabricating semiconductor substrate for optoelectronic components
US20090068776A1 (en) * 2003-01-31 2009-03-12 Osram Opto Semiconductors Gmbh Method for fabricating semiconductor substrate for optoelectronic components
US7244628B2 (en) * 2003-05-22 2007-07-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices
US20040235210A1 (en) * 2003-05-22 2004-11-25 Matsushita Electric Industrial Co. Ltd. Method for fabricating semiconductor devices
US20080254561A2 (en) * 2003-06-04 2008-10-16 Myung Yoo Method of fabricating vertical structure compound semiconductor devices
US7977133B2 (en) 2003-06-04 2011-07-12 Verticle, Inc. Method of fabricating vertical structure compound semiconductor devices
US20060148115A1 (en) * 2003-06-04 2006-07-06 Supergate Technology Usa, Inc. Method of fabricating vertical structure compound semiconductor devices
US20040245543A1 (en) * 2003-06-04 2004-12-09 Yoo Myung Cheol Method of fabricating vertical structure compound semiconductor devices
US7384807B2 (en) 2003-06-04 2008-06-10 Verticle, Inc. Method of fabricating vertical structure compound semiconductor devices
US7019330B2 (en) * 2003-08-28 2006-03-28 Lumileds Lighting U.S., Llc Resonant cavity light emitting device
US20050045893A1 (en) * 2003-08-28 2005-03-03 Ludowise Michael J. Resonant cavity light emitting device
US20080210970A1 (en) * 2003-09-19 2008-09-04 Tinggi Technologies Private Limited Fabrication of Conductive Metal Layer on Semiconductor Devices
US7465592B2 (en) 2004-04-28 2008-12-16 Verticle, Inc. Method of making vertical structure semiconductor devices including forming hard and soft copper layers
US20050242365A1 (en) * 2004-04-28 2005-11-03 Yoo Myung C Vertical structure semiconductor devices
US20060006554A1 (en) * 2004-06-22 2006-01-12 Yoo Myung C Vertical structure semiconductor devices with improved light output
US20080009088A1 (en) * 2004-06-25 2008-01-10 Samsung Electro-Mechanics Co., Ltd. Method of producing multi-wavelength semiconductor laser device
US7606280B2 (en) * 2004-06-25 2009-10-20 Samsung Electro-Mechanics Co., Ltd. Method of producing multi-wavelength semiconductor laser device
US20080056324A1 (en) * 2004-06-25 2008-03-06 Samsung Electro-Mechanics Co., Ltd. Method of producing multi-wavelength semiconductor laser device
US7606281B2 (en) * 2004-06-25 2009-10-20 Samsung Electro-Mechanics Co., Ltd. Method of producing multi-wavelength semiconductor laser device
US20050286591A1 (en) * 2004-06-25 2005-12-29 Samsung Electro-Mechanics Co., Ltd. Method of producing multi-wavelength semiconductor laser device
US20050286590A1 (en) * 2004-06-25 2005-12-29 Samsung Electro-Mechanics Co., Ltd. Method of producing multi-wavelength semiconductor laser device
US7459373B2 (en) 2004-11-15 2008-12-02 Verticle, Inc. Method for fabricating and separating semiconductor devices
US20060105542A1 (en) * 2004-11-15 2006-05-18 Yoo Myung C Method for fabricating and separating semiconductor devices
US8541290B2 (en) 2005-01-13 2013-09-24 Soitec Optoelectronic substrate and methods of making same
US20060166390A1 (en) * 2005-01-13 2006-07-27 Fabrice Letertre Optoelectronic substrate and methods of making same
US7537949B2 (en) 2005-01-13 2009-05-26 S.O.I.Tec Silicon On Insulator Technologies Optoelectronic substrate and methods of making same
US20090200569A1 (en) * 2005-01-13 2009-08-13 S.O.I.Tec Silicon On Insulator Technologies S.A. Optoelectronic substrate and methods of making same
EP1681712A1 (de) * 2005-01-13 2006-07-19 S.O.I. Tec Silicon on Insulator Technologies S.A. Verfahren zur Herstellung von Substraten für Optoelektronischen Anwendungen
WO2006074933A1 (en) * 2005-01-13 2006-07-20 S.O.I.Tec Silicon On Insulator Technologies S.A. Method of producing a substrate for an optoelectronic application
US9559252B2 (en) 2005-02-23 2017-01-31 Cree, Inc. Substrate removal process for high light extraction LEDs
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
US20060189098A1 (en) * 2005-02-23 2006-08-24 Cree, Inc. Substrate removal process for high light extraction LEDs
US7391061B2 (en) * 2005-06-22 2008-06-24 Epistar Corporation Light emitting diode with thermal spreading layer
US20060289875A1 (en) * 2005-06-22 2006-12-28 United Epitaxy Company, Ltd. Light emitting diode and method making the same
US8404505B2 (en) 2005-07-31 2013-03-26 Samsung Display Co., Ltd. Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same
US20090309118A1 (en) * 2005-07-31 2009-12-17 Samsung Electronics Co., Ltd Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same
US8115221B2 (en) * 2005-07-31 2012-02-14 Samsung Electronics Co., Ltd. Single crystal nitride semiconductor material on conductive substrate using substrate decomposition prevention layer for nitride light emitting device
US7829909B2 (en) 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
US20070221944A1 (en) * 2005-11-15 2007-09-27 Myung Cheol Yoo Light emitting diodes and fabrication methods thereof
WO2007133766A3 (en) * 2006-05-15 2008-07-03 Univ California Electrically-pumped (ga,in, ai) n vertical-cavity surface-emitting laser
US7480322B2 (en) 2006-05-15 2009-01-20 The Regents Of The University Of California Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
US20070280320A1 (en) * 2006-05-15 2007-12-06 Feezell Daniel F Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
WO2007133766A2 (en) * 2006-05-15 2007-11-22 The Regents Of The University Of California Electrically-pumped (ga,in, ai) n vertical-cavity surface-emitting laser
US9356194B2 (en) 2006-05-19 2016-05-31 Bridgelux, Inc. LEDs with efficient electrode structures
US9627589B2 (en) 2006-05-19 2017-04-18 Bridgelux, Inc. LEDs with efficient electrode structures
USRE46058E1 (en) * 2006-05-19 2016-07-05 Kabushiki Kaisha Toshiba Electrode structures for LEDs with increased active area
US7897992B2 (en) 2006-05-19 2011-03-01 Bridgelux, Inc. Low optical loss electrode structures for LEDs
US8080879B2 (en) * 2006-05-19 2011-12-20 Bridgelux, Inc. Electrode structures for LEDs with increased active area
US20090261373A1 (en) * 2006-05-19 2009-10-22 Shum Frank T Low optical loss electrode structures for leds
US10741726B2 (en) 2006-05-19 2020-08-11 Bridgelux Inc. LEDs with efficient electrode structures
US8114690B2 (en) 2006-05-19 2012-02-14 Bridgelux, Inc. Methods of low loss electrode structures for LEDs
US20110008918A1 (en) * 2006-05-19 2011-01-13 Shum Frank T Methods of low loss electrode structures for leds
US9099613B2 (en) 2006-05-19 2015-08-04 Bridgelux, Inc. LEDs with efficient electrode structures
US20110006332A1 (en) * 2006-05-19 2011-01-13 Shum Frank T LEDs with LOW OPTICAL LOSS ELECTRODE STRUCTURES
US8115226B2 (en) 2006-05-19 2012-02-14 Bridgelux, Inc. Low optical loss electrode structures for LEDs
US9105815B2 (en) 2006-05-19 2015-08-11 Bridgelux, Inc. LEDs with efficient electrode structures
US8124433B2 (en) 2006-05-19 2012-02-28 Bridgelux, Inc. Low optical loss electrode structures for LEDs
US8026524B2 (en) 2006-05-19 2011-09-27 Bridgelux, Inc. LEDs with low optical loss electrode structures
US20110024782A1 (en) * 2006-05-19 2011-02-03 Shum Frank T Low optical loss electrode structures for leds
US10199543B2 (en) 2006-05-19 2019-02-05 Bridgelux, Inc. LEDs with efficient electrode structures
US20100213495A1 (en) * 2006-05-19 2010-08-26 Shum Frank T Electrode structures for leds with increased active area
US20070290215A1 (en) * 2006-06-19 2007-12-20 Sanken Electric Co., Ltd. Light-emitting semiconductor device protected against reflector metal migration, and method of fabrication
US7659553B2 (en) * 2006-06-19 2010-02-09 Sanken Electric Co., Ltd. Light-emitting semiconductor device protected against reflector metal migration
US7829359B2 (en) 2008-03-26 2010-11-09 Lattice Power (Jiangxi) Corporation Method for fabricating highly reflective ohmic contact in light-emitting devices
US20100207096A1 (en) * 2008-03-26 2010-08-19 Lattice Power (Jiangxi) Corporation Method for fabricating highly reflective ohmic contact in light-emitting devices
US8581283B2 (en) 2008-04-28 2013-11-12 Advanced Optoelectronic Technology, Inc. Photoelectric device having group III nitride semiconductor
US20110114983A1 (en) * 2008-04-28 2011-05-19 Advanced Optoelectronic Technology, Inc. Photoelectric device having group iii nitride semiconductor
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9911903B2 (en) 2012-05-29 2018-03-06 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US10553760B2 (en) 2012-05-29 2020-02-04 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US9450152B2 (en) * 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US11862756B2 (en) 2012-05-29 2024-01-02 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US9595616B1 (en) * 2015-12-02 2017-03-14 Sandia Corporation Vertical III-nitride thin-film power diode

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GB0002753D0 (en) 2000-03-29
US20060121702A1 (en) 2006-06-08
US20040077114A1 (en) 2004-04-22
JP4860024B2 (ja) 2012-01-25
US6800500B2 (en) 2004-10-05
US7491565B2 (en) 2009-02-17
KR20000057891A (ko) 2000-09-25
KR100649777B1 (ko) 2006-11-24

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