DE10208170B8 - Strahlungsemittierendes Halbleiterbauelement mit einer vertikalen Emissionsrichtung und dessen Herstellungsverfahren - Google Patents

Strahlungsemittierendes Halbleiterbauelement mit einer vertikalen Emissionsrichtung und dessen Herstellungsverfahren Download PDF

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Publication number
DE10208170B8
DE10208170B8 DE2002108170 DE10208170A DE10208170B8 DE 10208170 B8 DE10208170 B8 DE 10208170B8 DE 2002108170 DE2002108170 DE 2002108170 DE 10208170 A DE10208170 A DE 10208170A DE 10208170 B8 DE10208170 B8 DE 10208170B8
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DE
Germany
Prior art keywords
radiation
production method
semiconductor component
emitting semiconductor
emission direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2002108170
Other languages
English (en)
Other versions
DE10208170B4 (de
DE10208170A1 (de
Inventor
Dr. Baur Johannes
Dr. Brüderl Georg
Dr. Eisert Dominik
Dr. Kaiser Stephan
Alfred Lell
Dr. Lugauer Hans-Jürgen
Uwe Strauss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE2002108170 priority Critical patent/DE10208170B8/de
Publication of DE10208170A1 publication Critical patent/DE10208170A1/de
Application granted granted Critical
Publication of DE10208170B4 publication Critical patent/DE10208170B4/de
Publication of DE10208170B8 publication Critical patent/DE10208170B8/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
DE2002108170 2002-02-26 2002-02-26 Strahlungsemittierendes Halbleiterbauelement mit einer vertikalen Emissionsrichtung und dessen Herstellungsverfahren Expired - Lifetime DE10208170B8 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2002108170 DE10208170B8 (de) 2002-02-26 2002-02-26 Strahlungsemittierendes Halbleiterbauelement mit einer vertikalen Emissionsrichtung und dessen Herstellungsverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2002108170 DE10208170B8 (de) 2002-02-26 2002-02-26 Strahlungsemittierendes Halbleiterbauelement mit einer vertikalen Emissionsrichtung und dessen Herstellungsverfahren

Publications (3)

Publication Number Publication Date
DE10208170A1 DE10208170A1 (de) 2003-09-11
DE10208170B4 DE10208170B4 (de) 2013-04-25
DE10208170B8 true DE10208170B8 (de) 2013-07-18

Family

ID=27740417

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002108170 Expired - Lifetime DE10208170B8 (de) 2002-02-26 2002-02-26 Strahlungsemittierendes Halbleiterbauelement mit einer vertikalen Emissionsrichtung und dessen Herstellungsverfahren

Country Status (1)

Country Link
DE (1) DE10208170B8 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7592636B2 (en) 2002-09-30 2009-09-22 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component and method for the production thereof
US7009215B2 (en) 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement
US5956364A (en) * 1997-10-02 1999-09-21 Motorola, Inc. Vertical cavity surface emitting laser with shaped cavity mirror and method of fabrication
US5966399A (en) * 1997-10-02 1999-10-12 Motorola, Inc. Vertical cavity surface emitting laser with integrated diffractive lens and method of fabrication
US6026111A (en) * 1997-10-28 2000-02-15 Motorola, Inc. Vertical cavity surface emitting laser device having an extended cavity
DE10000088A1 (de) * 1999-02-05 2000-08-17 Agilent Technologies Inc Mittels Substratentfernung hergestellte optische In¶x¶Al¶y¶Ga¶z¶N-Emitter
US6306672B1 (en) * 1997-07-24 2001-10-23 Samsung Electronics Co., Ltd. Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same
EP1207599A2 (de) * 2000-10-20 2002-05-22 Samsung Electronics Co., Ltd. Oberflächenemittierender Laser mit vertikalem Resonator und eingebauter Mikrolinse

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement
US6306672B1 (en) * 1997-07-24 2001-10-23 Samsung Electronics Co., Ltd. Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same
US5956364A (en) * 1997-10-02 1999-09-21 Motorola, Inc. Vertical cavity surface emitting laser with shaped cavity mirror and method of fabrication
US5966399A (en) * 1997-10-02 1999-10-12 Motorola, Inc. Vertical cavity surface emitting laser with integrated diffractive lens and method of fabrication
US6026111A (en) * 1997-10-28 2000-02-15 Motorola, Inc. Vertical cavity surface emitting laser device having an extended cavity
DE10000088A1 (de) * 1999-02-05 2000-08-17 Agilent Technologies Inc Mittels Substratentfernung hergestellte optische In¶x¶Al¶y¶Ga¶z¶N-Emitter
EP1207599A2 (de) * 2000-10-20 2002-05-22 Samsung Electronics Co., Ltd. Oberflächenemittierender Laser mit vertikalem Resonator und eingebauter Mikrolinse

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
US-Z.: "Appl. Phys. Lett.", Vol. 76, No. 14, 3. April 2000, S. 1804-1806 *
US-Z.: "Physics Today", Oct. 2000, S. 31-36 *

Also Published As

Publication number Publication date
DE10208170B4 (de) 2013-04-25
DE10208170A1 (de) 2003-09-11

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Effective date: 20130726

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