DE60040526D1 - Lichtemittierende iii-nitrid halbleitervorrichtung mit erhöhter lichterzeugung - Google Patents

Lichtemittierende iii-nitrid halbleitervorrichtung mit erhöhter lichterzeugung

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Publication number
DE60040526D1
DE60040526D1 DE60040526T DE60040526T DE60040526D1 DE 60040526 D1 DE60040526 D1 DE 60040526D1 DE 60040526 T DE60040526 T DE 60040526T DE 60040526 T DE60040526 T DE 60040526T DE 60040526 D1 DE60040526 D1 DE 60040526D1
Authority
DE
Germany
Prior art keywords
light
nitride semiconductor
increased
emitting iii
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60040526T
Other languages
English (en)
Inventor
Jonathan J Wierer
Michael R Krames
Daniel A Steigerwald
Fred A Kish
Pradeep Rajkomar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TECHNIK LPE GmbH
Original Assignee
TECHNIK LPE GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TECHNIK LPE GmbH filed Critical TECHNIK LPE GmbH
Application granted granted Critical
Publication of DE60040526D1 publication Critical patent/DE60040526D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L33/58—Optical field-shaping elements
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    • H01L33/64—Heat extraction or cooling elements
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE60040526T 1999-12-22 2000-12-21 Lichtemittierende iii-nitrid halbleitervorrichtung mit erhöhter lichterzeugung Expired - Lifetime DE60040526D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/470,450 US6514782B1 (en) 1999-12-22 1999-12-22 Method of making a III-nitride light-emitting device with increased light generating capability
PCT/US2000/035303 WO2001047039A1 (en) 1999-12-22 2000-12-21 Method of making a iii-nitride light-emitting device with increased light generating capability

Publications (1)

Publication Number Publication Date
DE60040526D1 true DE60040526D1 (de) 2008-11-27

Family

ID=23867680

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60040526T Expired - Lifetime DE60040526D1 (de) 1999-12-22 2000-12-21 Lichtemittierende iii-nitrid halbleitervorrichtung mit erhöhter lichterzeugung

Country Status (7)

Country Link
US (1) US6514782B1 (de)
EP (1) EP1161772B1 (de)
JP (2) JP5535414B2 (de)
KR (1) KR100937879B1 (de)
AU (1) AU2738901A (de)
DE (1) DE60040526D1 (de)
WO (1) WO2001047039A1 (de)

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DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
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DE10033502A1 (de) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul, Verfahren zu dessen Herstellung und dessen Verwendung
AT413062B (de) * 2000-07-12 2005-10-15 Tridonic Optoelectronics Gmbh Verfahren zur herstellung einer led-lichtquelle
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
ATE551731T1 (de) * 2001-04-23 2012-04-15 Panasonic Corp Lichtemittierende einrichtung mit einem leuchtdioden-chip
US6946788B2 (en) 2001-05-29 2005-09-20 Toyoda Gosei Co., Ltd. Light-emitting element
TW492202B (en) * 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
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US6777870B2 (en) * 2001-06-29 2004-08-17 Intel Corporation Array of thermally conductive elements in an oled display
US6747298B2 (en) 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
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US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
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JP4045767B2 (ja) * 2001-09-28 2008-02-13 日亜化学工業株式会社 半導体発光装置
JP3950700B2 (ja) * 2002-02-12 2007-08-01 日本オプネクスト株式会社 光伝送モジュールの製造方法
JP4585014B2 (ja) * 2002-04-12 2010-11-24 ソウル セミコンダクター カンパニー リミテッド 発光装置
JP2004056088A (ja) 2002-05-31 2004-02-19 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP3993475B2 (ja) 2002-06-20 2007-10-17 ローム株式会社 Ｌｅｄチップの実装構造、およびこれを備えた画像読み取り装置
JP4602079B2 (ja) * 2002-07-22 2010-12-22 クリー・インコーポレーテッド バリア層を含む発光ダイオードおよびその製造方法
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