DE60013039D1 - Lichtemittierende Halbleitervorrichtung - Google Patents

Lichtemittierende Halbleitervorrichtung

Info

Publication number
DE60013039D1
DE60013039D1 DE60013039T DE60013039T DE60013039D1 DE 60013039 D1 DE60013039 D1 DE 60013039D1 DE 60013039 T DE60013039 T DE 60013039T DE 60013039 T DE60013039 T DE 60013039T DE 60013039 D1 DE60013039 D1 DE 60013039D1
Authority
DE
Germany
Prior art keywords
light emitting
emitting device
semiconductor light
semiconductor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60013039T
Other languages
English (en)
Other versions
DE60013039T2 (de
Inventor
Shigeki Hashimoto
Katsunori Yanashima
Masao Ikeda
Hiroshi Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE60013039D1 publication Critical patent/DE60013039D1/de
Publication of DE60013039T2 publication Critical patent/DE60013039T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE60013039T 1999-06-04 2000-06-05 Lichtemittierende Halbleitervorrichtung Expired - Lifetime DE60013039T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15761699A JP4750238B2 (ja) 1999-06-04 1999-06-04 半導体発光素子
JP15761699 1999-06-04

Publications (2)

Publication Number Publication Date
DE60013039D1 true DE60013039D1 (de) 2004-09-23
DE60013039T2 DE60013039T2 (de) 2005-09-08

Family

ID=15653632

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60013039T Expired - Lifetime DE60013039T2 (de) 1999-06-04 2000-06-05 Lichtemittierende Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US6603147B1 (de)
EP (1) EP1063710B1 (de)
JP (1) JP4750238B2 (de)
KR (1) KR100634273B1 (de)
DE (1) DE60013039T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003289176A (ja) * 2002-01-24 2003-10-10 Sony Corp 半導体発光素子およびその製造方法
JP2003332688A (ja) * 2002-03-08 2003-11-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
JP2006135221A (ja) * 2004-11-09 2006-05-25 Mitsubishi Electric Corp 半導体発光素子
JP2007273901A (ja) * 2006-03-31 2007-10-18 Mitsubishi Electric Corp 半導体発光素子
KR100862366B1 (ko) * 2007-05-11 2008-10-13 (주)더리즈 발광 다이오드 소자의 제조 방법
US8403885B2 (en) 2007-12-17 2013-03-26 Abbott Cardiovascular Systems Inc. Catheter having transitioning shaft segments
JP2009277844A (ja) * 2008-05-14 2009-11-26 Rohm Co Ltd 窒化物半導体レーザ素子
US8144743B2 (en) 2008-03-05 2012-03-27 Rohm Co., Ltd. Nitride based semiconductor device and fabrication method for the same
JP2009267231A (ja) * 2008-04-28 2009-11-12 Rohm Co Ltd 窒化物半導体レーザ
JP2011210951A (ja) * 2010-03-30 2011-10-20 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子
JP5351290B2 (ja) * 2012-01-05 2013-11-27 住友電気工業株式会社 窒化物半導体レーザ、及びエピタキシャル基板
CN104701432A (zh) * 2015-03-20 2015-06-10 映瑞光电科技(上海)有限公司 GaN 基LED 外延结构及其制备方法
DE102017122032A1 (de) * 2017-09-22 2019-03-28 Osram Opto Semiconductors Gmbh Laserdiode
KR102560919B1 (ko) 2018-08-06 2023-07-31 엘지전자 주식회사 반도체 발광소자를 이용한 디스플레이 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
CN1160801C (zh) 1995-11-06 2004-08-04 日亚化学工业株式会社 氮化物半导体器件
GB2327145A (en) 1997-07-10 1999-01-13 Sharp Kk Graded layers in an optoelectronic semiconductor device
JPH11340505A (ja) * 1998-05-25 1999-12-10 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子

Also Published As

Publication number Publication date
EP1063710A1 (de) 2000-12-27
DE60013039T2 (de) 2005-09-08
JP4750238B2 (ja) 2011-08-17
JP2000349397A (ja) 2000-12-15
KR100634273B1 (ko) 2006-10-16
EP1063710B1 (de) 2004-08-18
KR20010007215A (ko) 2001-01-26
US6603147B1 (en) 2003-08-05

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Legal Events

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