KR20020002472A - 역전된 발광 소자 제조 방법 - Google Patents
역전된 발광 소자 제조 방법 Download PDFInfo
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- KR20020002472A KR20020002472A KR1020017010647A KR20017010647A KR20020002472A KR 20020002472 A KR20020002472 A KR 20020002472A KR 1020017010647 A KR1020017010647 A KR 1020017010647A KR 20017010647 A KR20017010647 A KR 20017010647A KR 20020002472 A KR20020002472 A KR 20020002472A
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Abstract
Description
Claims (13)
- 역전된 발광 소자(an inverted light emitting device)를 제조하는 방법에 있어서,성장 구조물(a growth structure) 상에 Ⅲ족 질화물 헤테로 구조물(a Ⅲ-nitride heterostructure)을 증착하는 단계와,각 접촉층과 전기적으로 접속되는 p 및 n 전극을 형성하는 단계와,장벽층을 도포하는 단계와,상기 Ⅲ족 질화물 헤테로 구조물을 마련하는 단계와,상기 소자에 서브마운트(a submount)를 부착하는 단계를 포함하는 역전 발광 소자 제조 방법.
- 제 1 항에 있어서,상기 서브마운트 부착 단계는,솔더를 상기 서브마운트 웨이퍼에 도포하는 단계와,상기 Ⅲ족 질화물 헤테로 구조물과 상기 서브마운트 웨이퍼 사이에 조인트(a joint)결합부를 형성하는 단계와,상기 서브마운트 웨이퍼를 다이싱(dicing)하는 단계와,상기 서브마운트를 패키지에 부착하는 단계를 포함하는 역전 발광 소자 제조 방법.
- 제 2 항에 있어서,상기 서브마운트를 부착하는 단계는, 상기 서브마운트 웨이퍼를 다이싱하는 단계 전에 상기 Ⅲ족 질화물 헤테로 구조물과 상기 서브마운트 웨이퍼 사이에 언더필(underfill)을 분배하는 단계를 더 포함하는 역전 발광 소자 제조 방법.
- 제 2 항에 있어서,상기 조인트를 형성하는 단계는, 상기 Ⅲ족 질화물 헤테로 구조물과 상기 서브마운트 사이에 공융 조인트(eutectic joint)를 형성하는 단계를 포함하는 역전 발광 소자 제조 방법.
- 제 2 항에 있어서,상기 조인트를 형성하는 단계는, 상기 Ⅲ족 질화물 헤테로 구조물과 상기 서브마운트 사이에 솔더 조인트(a solder joint)를 형성하는 단계를 포함하는 역전 발광 소자 제조 방법.
- 제 1 항에 있어서,상기 부착 단계는,솔더를 상기 Ⅲ족 질화물 헤테로 구조물에 도포하는 단계와,상기 서브마운트 웨이퍼를 다이싱하는 단계와,상기 서브마운트를 패키지에 부착하는 단계와,상기 Ⅲ족 질화물 헤테로 구조물과 상기 서브마운트 사이에 조인트를 형성하는 단계를 포함하는 역전 발광 소자 제조 방법.
- 제 6 항에 있어서,상기 Ⅲ족 질화물 헤테로 구조물과 상기 서브마운트 사이에 언더필을 분배하는 단계를 더 포함하는 역전 발광 소자 제조 방법.
- 제 6 항에 있어서,상기 조인트 형성 단계는,상기 Ⅲ족 질화물 헤테로 구조물과 상기 서브마운트 사이에 공융 접합부(a eutectic bond)를 형성하는 단계를 포함하는 역전 발광 소자 제조 방법.
- 제 6 항에 있어서,상기 조인트 형성 단계는, 상기 Ⅲ족 질화물 헤테로 구조물과 상기 서브마운트 사이에 솔더 조인트를 형성하는 단계를 포함하는 역전 발광 소자 제조 방법.
- 제 1 항에 있어서,금속간 유전체(a intermatal dielectric)를 증착하여 p와 n 전극을 전기적으로 격리시키는 단계와,시트 반사기(a sheet reflector)를 도포하는 단계를 포함하되,상기 금속간 유전체를 증착시키는 단계와 상기 시트 반사기를 도포하는 단계 다음에 상기 장벽층을 도포하는 단계가 이어지는 역전 발광 소자 제조 방법.
- 제 1 항에 있어서,상기 Ⅲ족 질화물 헤테로 구조물 마련 단계는,솔더링가능 금속(solderable metals)을 상기 Ⅲ족 질화물 헤테로 구조물에 도포하는 단계와,상기 솔더링가능 금속을 패터닝하는 단계를 포함하는 역전 발광 소자 제조 방법.
- 제 11 항에 있어서,유전체를 도포하는 단계와,상기 유전체를 패터닝하는 단계를 더 포함하는 역전 발광 소자 제조 방법.
- 제 1 항에 있어서,상기 Ⅲ족 질화물 헤테로 구조물 마련 단계는,솔더링가능 금속을 상기 Ⅲ족 질화물 헤테로 구조물에 도포하는 단계와,유전체를 피복하는 단계와,상기 유전체를 패터닝하는 단계를 포함하는 역전 발광 소자 제조 방법.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040013394A (ko) * | 2002-08-06 | 2004-02-14 | 주식회사 옵토웨이퍼테크 | 발광 다이오드 및 그 제조방법 |
KR100593536B1 (ko) * | 2004-03-08 | 2006-06-28 | 엘지전자 주식회사 | 발광 다이오드의 제조 방법 |
KR101028965B1 (ko) * | 2001-07-23 | 2011-04-12 | 크리 인코포레이티드 | 장벽층을 구비한 발광 다이오드 및 그 제조방법 |
KR101364721B1 (ko) * | 2012-03-09 | 2014-02-20 | 서울바이오시스 주식회사 | 전극 패드를 갖는 발광 다이오드 칩 |
Families Citing this family (134)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6573537B1 (en) * | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
US6777805B2 (en) * | 2000-03-31 | 2004-08-17 | Toyoda Gosei Co., Ltd. | Group-III nitride compound semiconductor device |
DE10051465A1 (de) | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
TWI292227B (en) * | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
DE10033502A1 (de) * | 2000-07-10 | 2002-01-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul, Verfahren zu dessen Herstellung und dessen Verwendung |
AT413062B (de) * | 2000-07-12 | 2005-10-15 | Tridonic Optoelectronics Gmbh | Verfahren zur herstellung einer led-lichtquelle |
US6794684B2 (en) | 2001-02-01 | 2004-09-21 | Cree, Inc. | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
ATE551731T1 (de) * | 2001-04-23 | 2012-04-15 | Panasonic Corp | Lichtemittierende einrichtung mit einem leuchtdioden-chip |
US6946788B2 (en) | 2001-05-29 | 2005-09-20 | Toyoda Gosei Co., Ltd. | Light-emitting element |
TW492202B (en) * | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
JP2002368263A (ja) * | 2001-06-06 | 2002-12-20 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6777870B2 (en) * | 2001-06-29 | 2004-08-17 | Intel Corporation | Array of thermally conductive elements in an oled display |
US6747298B2 (en) | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
US6888167B2 (en) | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US7211833B2 (en) * | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
JP4055503B2 (ja) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
US6617795B2 (en) * | 2001-07-26 | 2003-09-09 | Koninklijke Philips Electronics N.V. | Multichip LED package with in-package quantitative and spectral sensing capability and digital signal output |
JP4045767B2 (ja) * | 2001-09-28 | 2008-02-13 | 日亜化学工業株式会社 | 半導体発光装置 |
JP3950700B2 (ja) * | 2002-02-12 | 2007-08-01 | 日本オプネクスト株式会社 | 光伝送モジュールの製造方法 |
JP4585014B2 (ja) * | 2002-04-12 | 2010-11-24 | ソウル セミコンダクター カンパニー リミテッド | 発光装置 |
JP2004056088A (ja) * | 2002-05-31 | 2004-02-19 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP3993475B2 (ja) | 2002-06-20 | 2007-10-17 | ローム株式会社 | Ledチップの実装構造、およびこれを備えた画像読み取り装置 |
CA2492249A1 (en) * | 2002-07-22 | 2004-01-29 | Cree, Inc. | Light emitting diode including barrier layers and manufacturing methods therefor |
EP2149907A3 (en) * | 2002-08-29 | 2014-05-07 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
DE10244200A1 (de) * | 2002-09-23 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
US6977396B2 (en) * | 2003-02-19 | 2005-12-20 | Lumileds Lighting U.S., Llc | High-powered light emitting device with improved thermal properties |
DE10350707B4 (de) * | 2003-02-26 | 2014-02-13 | Osram Opto Semiconductors Gmbh | Elektrischer Kontakt für optoelektronischen Halbleiterchip und Verfahren zu dessen Herstellung |
TWI243488B (en) | 2003-02-26 | 2005-11-11 | Osram Opto Semiconductors Gmbh | Electrical contact-area for optoelectronic semiconductor-chip and its production method |
DE102004036295A1 (de) | 2003-07-29 | 2005-03-03 | GELcore, LLC (n.d.Ges.d. Staates Delaware), Valley View | Flip-Chip-Leuchtdioden-Bauelemente mit Substraten, deren Dicke verringert wurde oder die entfernt wurden |
US6876008B2 (en) * | 2003-07-31 | 2005-04-05 | Lumileds Lighting U.S., Llc | Mount for semiconductor light emitting device |
KR101183776B1 (ko) * | 2003-08-19 | 2012-09-17 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 소자 |
JP3841092B2 (ja) * | 2003-08-26 | 2006-11-01 | 住友電気工業株式会社 | 発光装置 |
AU2003263727A1 (en) | 2003-09-19 | 2005-04-11 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
DE10347737A1 (de) * | 2003-09-30 | 2005-05-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einem metallisierten Träger |
DE10351397A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
DE10351349A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Verfahren zum Hestellen eines Lumineszenzdiodenchips |
CN100375300C (zh) * | 2003-11-25 | 2008-03-12 | 葛世潮 | 大功率发光二极管 |
WO2005067064A1 (en) * | 2003-11-25 | 2005-07-21 | Shichao Ge | Light emitting diode and light emitting diode lamp |
JP2005191530A (ja) * | 2003-12-03 | 2005-07-14 | Sumitomo Electric Ind Ltd | 発光装置 |
WO2005064666A1 (en) | 2003-12-09 | 2005-07-14 | The Regents Of The University Of California | Highly efficient gallium nitride based light emitting diodes via surface roughening |
WO2005062905A2 (en) | 2003-12-24 | 2005-07-14 | Gelcore Llc | Laser lift-off of sapphire from a nitride flip-chip |
KR20050071238A (ko) * | 2003-12-31 | 2005-07-07 | 엘지전자 주식회사 | 고휘도 발광 소자 및 그 제조 방법 |
US7179670B2 (en) | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
WO2005088743A1 (en) * | 2004-03-15 | 2005-09-22 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
US7285801B2 (en) * | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
EP1756875A4 (en) | 2004-04-07 | 2010-12-29 | Tinggi Technologies Private Ltd | FABRICATION OF A RETROFLECTIVE LAYER ON SEMICONDUCTOR ELECTROLUMINESCENT DIODES |
JP4063249B2 (ja) * | 2004-05-19 | 2008-03-19 | ソニー株式会社 | 照明装置及び液晶表示装置 |
US7719020B2 (en) * | 2005-06-17 | 2010-05-18 | The Regents Of The University Of California | (Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method |
US8294166B2 (en) | 2006-12-11 | 2012-10-23 | The Regents Of The University Of California | Transparent light emitting diodes |
US7795623B2 (en) | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
US7557380B2 (en) | 2004-07-27 | 2009-07-07 | Cree, Inc. | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads |
JP4630629B2 (ja) * | 2004-10-29 | 2011-02-09 | 豊田合成株式会社 | 発光装置の製造方法 |
US7417220B2 (en) | 2004-09-09 | 2008-08-26 | Toyoda Gosei Co., Ltd. | Solid state device and light-emitting element |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US7081667B2 (en) * | 2004-09-24 | 2006-07-25 | Gelcore, Llc | Power LED package |
KR100773538B1 (ko) * | 2004-10-07 | 2007-11-07 | 삼성전자주식회사 | 반사 전극 및 이를 구비하는 화합물 반도체 발광소자 |
US7394158B2 (en) * | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
US7723736B2 (en) * | 2004-12-14 | 2010-05-25 | Seoul Opto Device Co., Ltd. | Light emitting device having a plurality of light emitting cells and package mounting the same |
US7335920B2 (en) * | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
US7834376B2 (en) | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
US9419092B2 (en) | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
US7125734B2 (en) | 2005-03-09 | 2006-10-24 | Gelcore, Llc | Increased light extraction from a nitride LED |
JP5059739B2 (ja) * | 2005-03-11 | 2012-10-31 | ソウル セミコンダクター カンパニー リミテッド | 直列接続された発光セルのアレイを有する発光ダイオードパッケージ |
JP4759357B2 (ja) * | 2005-09-28 | 2011-08-31 | 日立アプライアンス株式会社 | Led光源モジュール |
SG130975A1 (en) | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
SG131803A1 (en) | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
US8368165B2 (en) | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
SG133432A1 (en) | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
US20070176182A1 (en) * | 2006-01-27 | 2007-08-02 | Way-Jze Wen | Structure for integrating LED circuit onto heat-dissipation substrate |
CN100461474C (zh) * | 2006-03-03 | 2009-02-11 | 广镓光电股份有限公司 | 倒装芯片式发光二极管封装结构及其封装方法 |
JP5056082B2 (ja) * | 2006-04-17 | 2012-10-24 | 日亜化学工業株式会社 | 半導体発光素子 |
CN101506989B (zh) | 2006-07-31 | 2014-02-19 | 威世-硅尼克斯 | 用于SiC肖特基二极管的钼势垒金属及制造工艺 |
US7408204B2 (en) * | 2006-08-08 | 2008-08-05 | Huga Optotech Inc. | Flip-chip packaging structure for light emitting diode and method thereof |
SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
US7445959B2 (en) * | 2006-08-25 | 2008-11-04 | Infineon Technologies Ag | Sensor module and method of manufacturing same |
SG140512A1 (en) | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
TWI318013B (en) * | 2006-09-05 | 2009-12-01 | Epistar Corp | A light emitting device and the manufacture method thereof |
US9111950B2 (en) * | 2006-09-28 | 2015-08-18 | Philips Lumileds Lighting Company, Llc | Process for preparing a semiconductor structure for mounting |
US20090275266A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device polishing |
US7789531B2 (en) | 2006-10-02 | 2010-09-07 | Illumitex, Inc. | LED system and method |
DE102007022947B4 (de) | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
JP2009016467A (ja) * | 2007-07-03 | 2009-01-22 | Sony Corp | 窒化ガリウム系半導体素子及びこれを用いた光学装置並びにこれを用いた画像表示装置 |
US7867793B2 (en) * | 2007-07-09 | 2011-01-11 | Koninklijke Philips Electronics N.V. | Substrate removal during LED formation |
TWI442595B (zh) * | 2007-07-25 | 2014-06-21 | Everlight Electronics Co Ltd | 發光二極體裝置 |
CN101364626B (zh) * | 2007-08-07 | 2010-09-29 | 亿光电子工业股份有限公司 | 发光二极管装置 |
JP5329787B2 (ja) * | 2007-09-28 | 2013-10-30 | パナソニック株式会社 | 実装基板およびledモジュール |
US20090173956A1 (en) * | 2007-12-14 | 2009-07-09 | Philips Lumileds Lighting Company, Llc | Contact for a semiconductor light emitting device |
EP2240968A1 (en) * | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
DE102008011848A1 (de) | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
US8643034B2 (en) | 2008-02-29 | 2014-02-04 | Osram Opto Semiconductors Gmbh | Monolithic, optoelectronic semiconductor body and method for the production thereof |
US8124999B2 (en) * | 2008-07-18 | 2012-02-28 | Toyoda Gosei Co., Ltd. | Light emitting element and method of making the same |
TW201034256A (en) * | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US20100327300A1 (en) | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
TW201103170A (en) * | 2009-07-08 | 2011-01-16 | Paragon Sc Lighting Tech Co | LED package structure with concave area for positioning heat-conducting substance and method for manufacturing the same |
US8507304B2 (en) | 2009-07-17 | 2013-08-13 | Applied Materials, Inc. | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
US20110027973A1 (en) * | 2009-07-31 | 2011-02-03 | Applied Materials, Inc. | Method of forming led structures |
US8148241B2 (en) * | 2009-07-31 | 2012-04-03 | Applied Materials, Inc. | Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) * | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
KR101203139B1 (ko) | 2010-01-06 | 2012-11-20 | 서울옵토디바이스주식회사 | 다수의 셀이 결합된 발광 소자 |
CN101807650B (zh) * | 2010-03-19 | 2017-07-25 | 厦门市三安光电科技有限公司 | 具有分布布拉格反射层的氮化镓基高亮度发光二极管及其制作工艺 |
US8476663B2 (en) | 2010-09-01 | 2013-07-02 | Phostek, Inc. | Semiconductor light emitting component and method for manufacturing the same |
US20120061698A1 (en) | 2010-09-10 | 2012-03-15 | Toscano Lenora M | Method for Treating Metal Surfaces |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
CN103155183B (zh) * | 2010-10-12 | 2016-10-05 | 皇家飞利浦电子股份有限公司 | 具有减小的外延应力的发光器件 |
JP2012134253A (ja) | 2010-12-20 | 2012-07-12 | Toyoda Gosei Co Ltd | 照明用ledモジュール |
US9153545B2 (en) | 2010-12-20 | 2015-10-06 | Rohm Co., Ltd. | Light-emitting element unit and light-emitting element package |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
TW201312807A (zh) | 2011-07-21 | 2013-03-16 | Cree Inc | 光發射器元件封裝與部件及改良化學抵抗性的方法與相關方法 |
US10211380B2 (en) * | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
US9590155B2 (en) * | 2012-06-06 | 2017-03-07 | Cree, Inc. | Light emitting devices and substrates with improved plating |
KR101978968B1 (ko) * | 2012-08-14 | 2019-05-16 | 삼성전자주식회사 | 반도체 발광소자 및 발광장치 |
US9093446B2 (en) | 2013-01-21 | 2015-07-28 | International Business Machines Corporation | Chip stack with electrically insulating walls |
DE102013101367A1 (de) | 2013-02-12 | 2014-08-14 | Osram Opto Semiconductors Gmbh | Halbleiterchip |
WO2014128574A1 (en) * | 2013-02-19 | 2014-08-28 | Koninklijke Philips N.V. | A light emitting die component formed by multilayer structures |
JP6133664B2 (ja) * | 2013-04-03 | 2017-05-24 | 三菱電機株式会社 | 電子機器の製造方法 |
US9117733B2 (en) * | 2013-10-18 | 2015-08-25 | Posco Led Company Ltd. | Light emitting module and lighting apparatus having the same |
TWI550909B (zh) | 2014-03-21 | 2016-09-21 | A flip chip type light emitting diode and a method for manufacturing the same, and a flip chip type structure thereof | |
JP6483246B2 (ja) | 2014-10-17 | 2019-03-13 | インテル・コーポレーション | 微小持ち上げ・接合組立法 |
CN106716641B (zh) * | 2014-10-17 | 2021-07-09 | 英特尔公司 | 微型led显示器和组装 |
JP2017034218A (ja) * | 2015-08-03 | 2017-02-09 | 株式会社東芝 | 半導体発光装置 |
JP6674754B2 (ja) * | 2015-08-31 | 2020-04-01 | アルパッド株式会社 | 発光装置 |
US20170069791A1 (en) * | 2015-09-08 | 2017-03-09 | Epistar Corporation | Light-emitting device and method of manufacturing thereof |
KR102474301B1 (ko) * | 2015-12-15 | 2022-12-05 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
JP6328284B2 (ja) * | 2017-03-13 | 2018-05-23 | 三菱電機株式会社 | 電子機器 |
JP6942589B2 (ja) | 2017-09-27 | 2021-09-29 | 旭化成株式会社 | 半導体発光装置および紫外線発光モジュール |
DE112018006943T5 (de) * | 2018-01-26 | 2020-11-19 | Lg Electronics Inc. | Eine lichtemittierende Halbleitervorrichtung verwendende Displayvorrichtung |
JP6844606B2 (ja) * | 2018-12-28 | 2021-03-17 | 日亜化学工業株式会社 | 発光素子及びその製造方法ならびに発光装置 |
CN115863526A (zh) * | 2019-05-09 | 2023-03-28 | 群创光电股份有限公司 | 电子装置 |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5310840B2 (ko) | 1972-05-04 | 1978-04-17 | ||
FR2415332A1 (fr) | 1978-01-20 | 1979-08-17 | Thomson Csf | Dispositif d'alimentation de source lumineuse a semi-conducteur |
JPS5517180A (en) | 1978-07-24 | 1980-02-06 | Handotai Kenkyu Shinkokai | Light emitting diode display |
US4423478A (en) | 1981-07-20 | 1983-12-27 | Xerox Corporation | Phase controlled regulated power supply |
JPS6226874A (ja) * | 1985-07-29 | 1987-02-04 | Oki Electric Ind Co Ltd | 発光ダイオ−ドアレイのダイスボンデイング方法 |
US4983884A (en) | 1989-08-29 | 1991-01-08 | Amp Incorporated | Constant intensity light source for fiber optic testing |
JPH0658953B2 (ja) * | 1990-03-16 | 1994-08-03 | グローリー工業株式会社 | 半導体装置 |
US5226053A (en) | 1991-12-27 | 1993-07-06 | At&T Bell Laboratories | Light emitting diode |
JP2778349B2 (ja) | 1992-04-10 | 1998-07-23 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の電極 |
EP1313153A3 (en) | 1992-07-23 | 2005-05-04 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
JP3373561B2 (ja) | 1992-09-30 | 2003-02-04 | 株式会社東芝 | 発光ダイオード |
US5362977A (en) | 1992-12-28 | 1994-11-08 | At&T Bell Laboratories | Single mirror light-emitting diodes with enhanced intensity |
EP1450415A3 (en) | 1993-04-28 | 2005-05-04 | Nichia Corporation | Gallium nitride-based III-V group compound semiconductor device |
US5461425A (en) | 1994-02-15 | 1995-10-24 | Stanford University | CMOS image sensor with pixel level A/D conversion |
JPH07235624A (ja) | 1994-02-23 | 1995-09-05 | Toyoda Gosei Co Ltd | Ledランプ |
JP3717196B2 (ja) | 1994-07-19 | 2005-11-16 | 豊田合成株式会社 | 発光素子 |
US5557115A (en) * | 1994-08-11 | 1996-09-17 | Rohm Co. Ltd. | Light emitting semiconductor device with sub-mount |
US5811839A (en) | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
JPH08186288A (ja) * | 1994-12-27 | 1996-07-16 | Victor Co Of Japan Ltd | 半導体発光素子 |
TW319916B (ko) | 1995-06-05 | 1997-11-11 | Hewlett Packard Co | |
JP3960636B2 (ja) * | 1995-09-29 | 2007-08-15 | 三洋電機株式会社 | 発光素子 |
KR100267839B1 (ko) | 1995-11-06 | 2000-10-16 | 오가와 에이지 | 질화물 반도체 장치 |
JP3635757B2 (ja) | 1995-12-28 | 2005-04-06 | 昭和電工株式会社 | AlGaInP発光ダイオード |
US6121127A (en) | 1996-06-14 | 2000-09-19 | Toyoda Gosei Co., Ltd. | Methods and devices related to electrodes for p-type group III nitride compound semiconductors |
JP3244010B2 (ja) * | 1996-11-26 | 2002-01-07 | 日亜化学工業株式会社 | 周縁に電極を有する発光ダイオード |
JP3643665B2 (ja) | 1996-12-20 | 2005-04-27 | シャープ株式会社 | 半導体発光素子 |
EP0921577A4 (en) | 1997-01-31 | 2007-10-31 | Matsushita Electric Ind Co Ltd | ELECTROLUMINESCENT ELEMENT, SEMICONDUCTOR ELECTROLUMINESCENT DEVICE, AND PROCESS FOR PRODUCING THE SAME |
US6016038A (en) | 1997-08-26 | 2000-01-18 | Color Kinetics, Inc. | Multicolored LED lighting method and apparatus |
US5886401A (en) | 1997-09-02 | 1999-03-23 | General Electric Company | Structure and fabrication method for interconnecting light emitting diodes with metallization extending through vias in a polymer film overlying the light emitting diodes |
JP3130292B2 (ja) | 1997-10-14 | 2001-01-31 | 松下電子工業株式会社 | 半導体発光装置及びその製造方法 |
JP3631359B2 (ja) | 1997-11-14 | 2005-03-23 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP3356034B2 (ja) * | 1997-11-14 | 2002-12-09 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
EP1928034A3 (en) | 1997-12-15 | 2008-06-18 | Philips Lumileds Lighting Company LLC | Light emitting device |
US5998232A (en) | 1998-01-16 | 1999-12-07 | Implant Sciences Corporation | Planar technology for producing light-emitting devices |
US6091085A (en) | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
DE19921987B4 (de) | 1998-05-13 | 2007-05-16 | Toyoda Gosei Kk | Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen |
JP3531475B2 (ja) * | 1998-05-22 | 2004-05-31 | 日亜化学工業株式会社 | フリップチップ型光半導体素子 |
US5914501A (en) | 1998-08-27 | 1999-06-22 | Hewlett-Packard Company | Light emitting diode assembly having integrated electrostatic discharge protection |
US6169294B1 (en) | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
US6307218B1 (en) | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
JP2000208822A (ja) | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP4296644B2 (ja) | 1999-01-29 | 2009-07-15 | 豊田合成株式会社 | 発光ダイオード |
US6133589A (en) | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
-
1999
- 1999-12-22 US US09/470,450 patent/US6514782B1/en not_active Expired - Lifetime
-
2000
- 2000-12-21 DE DE60040526T patent/DE60040526D1/de not_active Expired - Lifetime
- 2000-12-21 EP EP00990353A patent/EP1161772B1/en not_active Expired - Lifetime
- 2000-12-21 KR KR1020017010647A patent/KR100937879B1/ko active IP Right Grant
- 2000-12-21 AU AU27389/01A patent/AU2738901A/en not_active Abandoned
- 2000-12-21 WO PCT/US2000/035303 patent/WO2001047039A1/en active Application Filing
- 2000-12-22 JP JP2000404538A patent/JP5535414B2/ja not_active Expired - Lifetime
-
2011
- 2011-12-22 JP JP2011281080A patent/JP5702711B2/ja not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101028965B1 (ko) * | 2001-07-23 | 2011-04-12 | 크리 인코포레이티드 | 장벽층을 구비한 발광 다이오드 및 그 제조방법 |
KR20040013394A (ko) * | 2002-08-06 | 2004-02-14 | 주식회사 옵토웨이퍼테크 | 발광 다이오드 및 그 제조방법 |
KR100593536B1 (ko) * | 2004-03-08 | 2006-06-28 | 엘지전자 주식회사 | 발광 다이오드의 제조 방법 |
KR101364721B1 (ko) * | 2012-03-09 | 2014-02-20 | 서울바이오시스 주식회사 | 전극 패드를 갖는 발광 다이오드 칩 |
Also Published As
Publication number | Publication date |
---|---|
JP5702711B2 (ja) | 2015-04-15 |
DE60040526D1 (de) | 2008-11-27 |
EP1161772A1 (en) | 2001-12-12 |
JP2012060182A (ja) | 2012-03-22 |
US6514782B1 (en) | 2003-02-04 |
KR100937879B1 (ko) | 2010-01-21 |
AU2738901A (en) | 2001-07-03 |
EP1161772B1 (en) | 2008-10-15 |
WO2001047039A1 (en) | 2001-06-28 |
WO2001047039A8 (en) | 2001-10-25 |
JP5535414B2 (ja) | 2014-07-02 |
JP2001237458A (ja) | 2001-08-31 |
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