UA82180C2 - ОБЪЕМНЫЙ МОНОКРИСТАЛЛ НИТРИДА ГАЛЛИЯ (ВАРИАНТЫ) И ОСНОВА ДЛЯ эПИТАКСИИ - Google Patents
ОБЪЕМНЫЙ МОНОКРИСТАЛЛ НИТРИДА ГАЛЛИЯ (ВАРИАНТЫ) И ОСНОВА ДЛЯ эПИТАКСИИ Download PDFInfo
- Publication number
- UA82180C2 UA82180C2 UA20040503964A UA20040503964A UA82180C2 UA 82180 C2 UA82180 C2 UA 82180C2 UA 20040503964 A UA20040503964 A UA 20040503964A UA 20040503964 A UA20040503964 A UA 20040503964A UA 82180 C2 UA82180 C2 UA 82180C2
- Authority
- UA
- Ukraine
- Prior art keywords
- single crystal
- gallium nitride
- gallium
- nitride
- crystal
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 359
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 157
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 153
- 238000000034 method Methods 0.000 title claims abstract description 103
- 238000000407 epitaxy Methods 0.000 title claims abstract description 32
- 230000008569 process Effects 0.000 title claims abstract description 29
- 150000004767 nitrides Chemical class 0.000 claims abstract description 155
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 126
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 125
- 238000002425 crystallisation Methods 0.000 claims abstract description 56
- 230000008025 crystallization Effects 0.000 claims abstract description 56
- 238000004090 dissolution Methods 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 239000002904 solvent Substances 0.000 claims abstract description 33
- 239000002585 base Substances 0.000 claims description 44
- 239000007858 starting material Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 22
- 229910052783 alkali metal Inorganic materials 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 19
- 230000000873 masking effect Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- -1 amidoimides Chemical class 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 15
- 150000001340 alkali metals Chemical class 0.000 claims description 14
- 150000002367 halogens Chemical class 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 12
- 229910052736 halogen Inorganic materials 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000011591 potassium Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 150000001408 amides Chemical class 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 150000001540 azides Chemical class 0.000 claims description 5
- 150000002259 gallium compounds Chemical class 0.000 claims description 5
- 150000004678 hydrides Chemical class 0.000 claims description 5
- 150000003949 imides Chemical class 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 229910001414 potassium ion Inorganic materials 0.000 claims description 3
- 229910001415 sodium ion Inorganic materials 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims 6
- 230000001681 protective effect Effects 0.000 claims 4
- 239000003513 alkali Substances 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 210000002700 urine Anatomy 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 16
- 230000005693 optoelectronics Effects 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 137
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 56
- 229910021529 ammonia Inorganic materials 0.000 description 28
- 238000000151 deposition Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 230000036961 partial effect Effects 0.000 description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 6
- 208000012868 Overgrowth Diseases 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910052700 potassium Inorganic materials 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- PXIPVTKHYLBLMZ-UHFFFAOYSA-N Sodium azide Chemical compound [Na+].[N-]=[N+]=[N-] PXIPVTKHYLBLMZ-UHFFFAOYSA-N 0.000 description 4
- 229910001413 alkali metal ion Inorganic materials 0.000 description 4
- 238000005275 alloying Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 238000005136 cathodoluminescence Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000001339 alkali metal compounds Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- ZFFBIQMNKOJDJE-UHFFFAOYSA-N 2-bromo-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(Br)C(=O)C1=CC=CC=C1 ZFFBIQMNKOJDJE-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 101000963903 Homo sapiens Modulator of smoothened protein Proteins 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 102100040097 Modulator of smoothened protein Human genes 0.000 description 1
- 101100001347 Mus musculus Akt1s1 gene Proteins 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000102 alkali metal hydride Inorganic materials 0.000 description 1
- 150000008046 alkali metal hydrides Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002073 fluorescence micrograph Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL35037501A PL350375A1 (en) | 2001-10-26 | 2001-10-26 | Epitaxial layer substrate |
| PL354740A PL205838B1 (pl) | 2002-06-26 | 2002-06-26 | Podłoże do epitaksji |
| PCT/PL2002/000077 WO2003035945A2 (en) | 2001-10-26 | 2002-10-25 | Substrate for epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| UA82180C2 true UA82180C2 (ru) | 2008-03-25 |
Family
ID=26653409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| UA20040503964A UA82180C2 (ru) | 2001-10-26 | 2002-10-25 | ОБЪЕМНЫЙ МОНОКРИСТАЛЛ НИТРИДА ГАЛЛИЯ (ВАРИАНТЫ) И ОСНОВА ДЛЯ эПИТАКСИИ |
Country Status (17)
| Country | Link |
|---|---|
| US (2) | US7132730B2 (ru) |
| EP (1) | EP1442162B1 (ru) |
| JP (2) | JP4693351B2 (ru) |
| KR (1) | KR100904501B1 (ru) |
| CN (1) | CN1316070C (ru) |
| AT (1) | ATE452999T1 (ru) |
| AU (1) | AU2002347692C1 (ru) |
| CA (1) | CA2464083C (ru) |
| DE (1) | DE60234856D1 (ru) |
| HU (1) | HUP0401882A3 (ru) |
| IL (2) | IL161420A0 (ru) |
| NO (1) | NO20042119L (ru) |
| PL (1) | PL225235B1 (ru) |
| RU (1) | RU2312176C2 (ru) |
| TW (1) | TWI231321B (ru) |
| UA (1) | UA82180C2 (ru) |
| WO (1) | WO2003035945A2 (ru) |
Families Citing this family (183)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6677619B1 (en) * | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| KR100850293B1 (ko) * | 2001-06-06 | 2008-08-04 | 니치아 카가쿠 고교 가부시키가이샤 | 벌크 단결정 갈륨함유 질화물을 얻기 위한 방법 및 장치 |
| DE60234856D1 (de) * | 2001-10-26 | 2010-02-04 | Ammono Sp Zoo | Substrat für epitaxie |
| JP4097601B2 (ja) * | 2001-10-26 | 2008-06-11 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 窒化物半導体レーザ素子、及びその製造方法 |
| US8809867B2 (en) * | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
| KR101167590B1 (ko) * | 2002-04-15 | 2012-07-27 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 유기금속 화학기상 증착법에 의해 성장된 무극성 α면 질화갈륨 박막 |
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2002
- 2002-10-25 DE DE60234856T patent/DE60234856D1/de not_active Expired - Lifetime
- 2002-10-25 UA UA20040503964A patent/UA82180C2/ru unknown
- 2002-10-25 TW TW091125039A patent/TWI231321B/zh not_active IP Right Cessation
- 2002-10-25 US US10/493,747 patent/US7132730B2/en not_active Expired - Lifetime
- 2002-10-25 EP EP02783869A patent/EP1442162B1/en not_active Expired - Lifetime
- 2002-10-25 CA CA2464083A patent/CA2464083C/en not_active Expired - Lifetime
- 2002-10-25 AU AU2002347692A patent/AU2002347692C1/en not_active Expired
- 2002-10-25 PL PL373986A patent/PL225235B1/pl unknown
- 2002-10-25 CN CNB028212363A patent/CN1316070C/zh not_active Expired - Lifetime
- 2002-10-25 IL IL16142002A patent/IL161420A0/xx active IP Right Grant
- 2002-10-25 KR KR1020047006223A patent/KR100904501B1/ko active IP Right Grant
- 2002-10-25 WO PCT/PL2002/000077 patent/WO2003035945A2/en active Application Filing
- 2002-10-25 AT AT02783869T patent/ATE452999T1/de not_active IP Right Cessation
- 2002-10-25 HU HU0401882A patent/HUP0401882A3/hu unknown
- 2002-10-25 RU RU2004116073/15A patent/RU2312176C2/ru active
- 2002-10-25 JP JP2003538438A patent/JP4693351B2/ja not_active Expired - Lifetime
-
2004
- 2004-04-15 IL IL161420A patent/IL161420A/en not_active IP Right Cessation
- 2004-05-24 NO NO20042119A patent/NO20042119L/no not_active Application Discontinuation
-
2006
- 2006-10-30 US US11/589,058 patent/US7420261B2/en not_active Expired - Lifetime
-
2010
- 2010-04-30 JP JP2010105636A patent/JP5123984B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1442162A2 (en) | 2004-08-04 |
| US20070040240A1 (en) | 2007-02-22 |
| CA2464083A1 (en) | 2003-05-01 |
| DE60234856D1 (de) | 2010-02-04 |
| RU2312176C2 (ru) | 2007-12-10 |
| PL225235B1 (pl) | 2017-03-31 |
| IL161420A0 (en) | 2004-09-27 |
| KR100904501B1 (ko) | 2009-06-25 |
| CA2464083C (en) | 2011-08-02 |
| PL373986A1 (en) | 2005-09-19 |
| AU2002347692C1 (en) | 2008-03-06 |
| JP5123984B2 (ja) | 2013-01-23 |
| US7420261B2 (en) | 2008-09-02 |
| RU2004116073A (ru) | 2005-04-10 |
| EP1442162B1 (en) | 2009-12-23 |
| US7132730B2 (en) | 2006-11-07 |
| JP2010222247A (ja) | 2010-10-07 |
| TWI231321B (en) | 2005-04-21 |
| JP2005506271A (ja) | 2005-03-03 |
| HUP0401882A3 (en) | 2005-11-28 |
| WO2003035945A3 (en) | 2003-10-16 |
| NO20042119D0 (no) | 2004-05-24 |
| AU2002347692B2 (en) | 2007-08-02 |
| KR20040049324A (ko) | 2004-06-11 |
| CN1575357A (zh) | 2005-02-02 |
| HUP0401882A1 (hu) | 2004-12-28 |
| IL161420A (en) | 2007-10-31 |
| JP4693351B2 (ja) | 2011-06-01 |
| NO20042119L (no) | 2004-05-24 |
| WO2003035945A2 (en) | 2003-05-01 |
| CN1316070C (zh) | 2007-05-16 |
| US20040261692A1 (en) | 2004-12-30 |
| ATE452999T1 (de) | 2010-01-15 |
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