TWI665173B - 氧化物燒結體、其製造方法及濺鍍靶 - Google Patents
氧化物燒結體、其製造方法及濺鍍靶 Download PDFInfo
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- TWI665173B TWI665173B TW103145552A TW103145552A TWI665173B TW I665173 B TWI665173 B TW I665173B TW 103145552 A TW103145552 A TW 103145552A TW 103145552 A TW103145552 A TW 103145552A TW I665173 B TWI665173 B TW I665173B
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- Prior art keywords
- sintered body
- oxide sintered
- phase
- oxide
- elements
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- 238000005477 sputtering target Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 11
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 11
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 11
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 11
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 10
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 10
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 7
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 7
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 7
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 7
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 7
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 7
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 7
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 7
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims description 35
- 239000002245 particle Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 239000002994 raw material Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 17
- 239000011812 mixed powder Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910000616 Ferromanganese Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 claims description 6
- 239000006104 solid solution Substances 0.000 claims description 3
- -1 (Pm Inorganic materials 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 description 36
- 238000004544 sputter deposition Methods 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 24
- 238000005245 sintering Methods 0.000 description 19
- 230000002159 abnormal effect Effects 0.000 description 17
- 239000002223 garnet Substances 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 238000002441 X-ray diffraction Methods 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004453 electron probe microanalysis Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
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- 238000005401 electroluminescence Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001586 aluminite Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052949 galena Inorganic materials 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 238000004451 qualitative analysis Methods 0.000 description 2
- 238000004445 quantitative analysis Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910021532 Calcite Inorganic materials 0.000 description 1
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000001694 spray drying Methods 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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| KR102530123B1 (ko) * | 2015-07-30 | 2023-05-08 | 이데미쓰 고산 가부시키가이샤 | 결정질 산화물 반도체 박막, 결정질 산화물 반도체 박막의 제조 방법 및 박막 트랜지스터 |
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| CN109641757B (zh) * | 2016-08-31 | 2022-02-25 | 出光兴产株式会社 | 石榴石型化合物、含有该化合物的烧结体以及溅射靶 |
| WO2018066547A1 (ja) * | 2016-10-04 | 2018-04-12 | 出光興産株式会社 | 酸化物焼結体及びスパッタリングターゲット |
| WO2018143073A1 (ja) * | 2017-02-01 | 2018-08-09 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置 |
| JP7092746B2 (ja) * | 2017-03-30 | 2022-06-28 | 出光興産株式会社 | 酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、薄膜トランジスタ、および電子機器 |
| KR102560859B1 (ko) * | 2017-04-17 | 2023-07-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 상자성 가닛형 투명 세라믹스, 자기 광학 재료 및 자기 광학 디바이스 |
| JP6397592B1 (ja) | 2017-10-02 | 2018-09-26 | 住友化学株式会社 | スパッタリングターゲットの製造方法およびスパッタリングターゲット |
| CN109279893A (zh) * | 2018-08-22 | 2019-01-29 | 吉林建筑大学 | 钬铥双掺钆镓石榴石激光透明陶瓷制备方法 |
| TWI725685B (zh) * | 2018-12-28 | 2021-04-21 | 日本商出光興產股份有限公司 | 燒結體 |
| US12205992B2 (en) * | 2019-03-28 | 2025-01-21 | Idemitsu Kosan Co., Ltd. | Crystalline oxide thin film, multilayer body and thin film transistor |
| TWI719820B (zh) * | 2020-01-31 | 2021-02-21 | 光洋應用材料科技股份有限公司 | 銦鋯氧化物靶材及其製法及銦鋯氧化物薄膜 |
| CN113072091B (zh) * | 2021-03-25 | 2022-05-20 | 南昌航空大学 | 一种五元铈钕钇基高熵稀土氧化物及其制备方法 |
| KR20240073052A (ko) | 2021-10-14 | 2024-05-24 | 이데미쓰 고산 가부시키가이샤 | 결정 산화물 박막, 적층체 및 박막 트랜지스터 |
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| JP4628685B2 (ja) * | 2004-02-17 | 2011-02-09 | Jx日鉱日石金属株式会社 | 光情報記録媒体用スパッタリングターゲット及び光情報記録媒体 |
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| JP5016831B2 (ja) * | 2006-03-17 | 2012-09-05 | キヤノン株式会社 | 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置 |
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Patent Citations (4)
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| JP2000077358A (ja) * | 1998-08-27 | 2000-03-14 | Asahi Glass Co Ltd | 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体 |
| JP2007045902A (ja) * | 2005-08-09 | 2007-02-22 | Canon Inc | 酸化物、発光素子及び表示装置 |
| TW201014812A (en) * | 2008-09-19 | 2010-04-16 | Idemitsu Kosan Co | Oxide sintered body and sputtering target |
| WO2010070944A1 (ja) * | 2008-12-15 | 2010-06-24 | 出光興産株式会社 | 酸化インジウム系焼結体及びスパッタリングターゲット |
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| JPWO2015098060A1 (ja) | 2017-03-23 |
| TW201533005A (zh) | 2015-09-01 |
| JP6563553B2 (ja) | 2019-08-21 |
| JP2018158880A (ja) | 2018-10-11 |
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