CN115340360B - 氧化物烧结体、该烧结体的制造方法及溅射靶 - Google Patents
氧化物烧结体、该烧结体的制造方法及溅射靶 Download PDFInfo
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- CN115340360B CN115340360B CN202211043880.1A CN202211043880A CN115340360B CN 115340360 B CN115340360 B CN 115340360B CN 202211043880 A CN202211043880 A CN 202211043880A CN 115340360 B CN115340360 B CN 115340360B
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211043880.1A CN115340360B (zh) | 2013-12-27 | 2014-12-18 | 氧化物烧结体、该烧结体的制造方法及溅射靶 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-272384 | 2013-12-27 | ||
| JP2013272384 | 2013-12-27 | ||
| CN201480070391.2A CN105873881A (zh) | 2013-12-27 | 2014-12-18 | 氧化物烧结体、该烧结体的制造方法及溅射靶 |
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| CN107924822B (zh) * | 2015-07-30 | 2022-10-28 | 出光兴产株式会社 | 晶体氧化物半导体薄膜、晶体氧化物半导体薄膜的制造方法以及薄膜晶体管 |
| JP2017178740A (ja) * | 2016-03-31 | 2017-10-05 | 出光興産株式会社 | 酸化物焼結体及びスパッタリングターゲット |
| CN109311756B (zh) * | 2016-06-17 | 2022-07-22 | 出光兴产株式会社 | 氧化物烧结体以及溅射靶 |
| US11447398B2 (en) * | 2016-08-31 | 2022-09-20 | Idemitsu Kosan Co., Ltd. | Garnet compound, sintered body and sputtering target containing same |
| TWI737829B (zh) * | 2016-10-04 | 2021-09-01 | 日本商出光興產股份有限公司 | 氧化物燒結體及濺鍍靶 |
| JP7187322B2 (ja) * | 2017-02-01 | 2022-12-12 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置 |
| JP7092746B2 (ja) * | 2017-03-30 | 2022-06-28 | 出光興産株式会社 | 酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、薄膜トランジスタ、および電子機器 |
| CN110536876B (zh) * | 2017-04-17 | 2022-06-14 | 信越化学工业株式会社 | 顺磁性石榴石型透明陶瓷、磁光材料和磁光器件 |
| JP6397592B1 (ja) | 2017-10-02 | 2018-09-26 | 住友化学株式会社 | スパッタリングターゲットの製造方法およびスパッタリングターゲット |
| CN109279893A (zh) * | 2018-08-22 | 2019-01-29 | 吉林建筑大学 | 钬铥双掺钆镓石榴石激光透明陶瓷制备方法 |
| WO2020138319A1 (ja) * | 2018-12-28 | 2020-07-02 | 出光興産株式会社 | 焼結体 |
| WO2020196716A1 (ja) | 2019-03-28 | 2020-10-01 | 出光興産株式会社 | 結晶酸化物薄膜、積層体及び薄膜トランジスタ |
| TWI719820B (zh) * | 2020-01-31 | 2021-02-21 | 光洋應用材料科技股份有限公司 | 銦鋯氧化物靶材及其製法及銦鋯氧化物薄膜 |
| CN113072091B (zh) * | 2021-03-25 | 2022-05-20 | 南昌航空大学 | 一种五元铈钕钇基高熵稀土氧化物及其制备方法 |
| WO2023063348A1 (ja) | 2021-10-14 | 2023-04-20 | 出光興産株式会社 | 結晶酸化物薄膜、積層体及び薄膜トランジスタ |
| CN120981441A (zh) * | 2023-03-29 | 2025-11-18 | 出光兴产株式会社 | 氧化物烧结体、溅射靶、氧化物薄膜、薄膜晶体管及电子设备 |
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| JPWO2015098060A1 (ja) | 2017-03-23 |
| CN105873881A (zh) | 2016-08-17 |
| WO2015098060A1 (ja) | 2015-07-02 |
| JP5977893B2 (ja) | 2016-08-24 |
| JP6334598B2 (ja) | 2018-05-30 |
| CN115340360A (zh) | 2022-11-15 |
| JP2018158880A (ja) | 2018-10-11 |
| JP2016210679A (ja) | 2016-12-15 |
| JP6563553B2 (ja) | 2019-08-21 |
| TWI665173B (zh) | 2019-07-11 |
| KR20160102165A (ko) | 2016-08-29 |
| TW201533005A (zh) | 2015-09-01 |
| KR102340437B1 (ko) | 2021-12-16 |
| US20160343554A1 (en) | 2016-11-24 |
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