TWI613826B - 薄膜電晶體的製造方法、薄膜電晶體、顯示裝置、影像感測器及ｘ線感測器 - Google Patents

薄膜電晶體的製造方法、薄膜電晶體、顯示裝置、影像感測器及ｘ線感測器 Download PDF

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TWI613826B
TWI613826B TW102121005A TW102121005A TWI613826B TW I613826 B TWI613826 B TW I613826B TW 102121005 A TW102121005 A TW 102121005A TW 102121005 A TW102121005 A TW 102121005A TW I613826 B TWI613826 B TW I613826B
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thin film
film transistor
region
oxide semiconductor
semiconductor layer
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TW201405832A (zh
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小野雅司
高田真宏
井手上敏也
田中淳
鈴木真之
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富士軟片股份有限公司
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
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    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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TW102121005A 2012-06-20 2013-06-14 薄膜電晶體的製造方法、薄膜電晶體、顯示裝置、影像感測器及ｘ線感測器 TWI613826B (zh)

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JP2012-139187 2012-06-20
JP2012139187A JP5972065B2 (ja) 2012-06-20 2012-06-20 薄膜トランジスタの製造方法

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TW201405832A TW201405832A (zh) 2014-02-01
TWI613826B true TWI613826B (zh) 2018-02-01

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US (1) US9673048B2 (enExample)
JP (1) JP5972065B2 (enExample)
KR (1) KR101634482B1 (enExample)
TW (1) TWI613826B (enExample)
WO (1) WO2013190992A1 (enExample)

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