TWI575706B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI575706B
TWI575706B TW105116108A TW105116108A TWI575706B TW I575706 B TWI575706 B TW I575706B TW 105116108 A TW105116108 A TW 105116108A TW 105116108 A TW105116108 A TW 105116108A TW I575706 B TWI575706 B TW I575706B
Authority
TW
Taiwan
Prior art keywords
conductive film
film
circuit
insulator
antenna
Prior art date
Application number
TW105116108A
Other languages
English (en)
Chinese (zh)
Other versions
TW201631738A (zh
Inventor
及川欣聰
江口晉吾
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201631738A publication Critical patent/TW201631738A/zh
Application granted granted Critical
Publication of TWI575706B publication Critical patent/TWI575706B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Details Of Aerials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW105116108A 2008-09-18 2009-09-16 半導體裝置 TWI575706B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008239075 2008-09-18
JP2008239078 2008-09-18

Publications (2)

Publication Number Publication Date
TW201631738A TW201631738A (zh) 2016-09-01
TWI575706B true TWI575706B (zh) 2017-03-21

Family

ID=42006465

Family Applications (3)

Application Number Title Priority Date Filing Date
TW105116108A TWI575706B (zh) 2008-09-18 2009-09-16 半導體裝置
TW103120159A TWI545727B (zh) 2008-09-18 2009-09-16 半導體裝置
TW098131226A TWI450381B (zh) 2008-09-18 2009-09-16 半導體裝置

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW103120159A TWI545727B (zh) 2008-09-18 2009-09-16 半導體裝置
TW098131226A TWI450381B (zh) 2008-09-18 2009-09-16 半導體裝置

Country Status (4)

Country Link
US (3) US9177978B2 (enExample)
JP (7) JP5303409B2 (enExample)
TW (3) TWI575706B (enExample)
WO (1) WO2010032602A1 (enExample)

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WO2010032602A1 (en) * 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5501174B2 (ja) * 2009-09-17 2014-05-21 株式会社半導体エネルギー研究所 半導体装置
WO2011145633A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
WO2012070483A1 (ja) * 2010-11-25 2012-05-31 シャープ株式会社 フレキシブルデバイス、その製造方法、および表示装置
US8643007B2 (en) * 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5906923B2 (ja) * 2012-04-26 2016-04-20 株式会社デンソー 誘電膜の製造方法
US9742378B2 (en) * 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
JP6431278B2 (ja) * 2014-04-18 2018-11-28 株式会社ジャパンディスプレイ 表示装置用基板
WO2016208401A1 (ja) * 2015-06-25 2016-12-29 株式会社村田製作所 樹脂基板および電子機器
US9935165B2 (en) 2015-08-31 2018-04-03 Joled, Inc. Semiconductor device, display unit, method of manufacturing display unit, and electronic apparatus
EP3480828A4 (en) * 2016-07-01 2020-03-04 Nissan Chemical Corporation METHOD FOR PREVENTING THE ARRANGEMENT OF A RAMPANT ELECTRIC SHOCK
KR102573853B1 (ko) * 2016-09-20 2023-09-01 삼성디스플레이 주식회사 발광 표시 장치
US11658222B2 (en) * 2017-09-27 2023-05-23 Intel Corporation Thin film transistor with charge trap layer

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TW200802806A (en) * 2006-02-23 2008-01-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP2008053701A (ja) * 2006-07-28 2008-03-06 Semiconductor Energy Lab Co Ltd 記憶素子及び半導体装置
TW200816053A (en) * 2006-07-28 2008-04-01 Semiconductor Energy Lab Semiconductor device

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Also Published As

Publication number Publication date
TW201029150A (en) 2010-08-01
JP5706549B2 (ja) 2015-04-22
US20100065952A1 (en) 2010-03-18
US20160056140A1 (en) 2016-02-25
JP5985678B2 (ja) 2016-09-06
TW201438194A (zh) 2014-10-01
TW201631738A (zh) 2016-09-01
JP2010097601A (ja) 2010-04-30
US9177978B2 (en) 2015-11-03
WO2010032602A1 (en) 2010-03-25
JP2015144292A (ja) 2015-08-06
JP5303409B2 (ja) 2013-10-02
US10020296B2 (en) 2018-07-10
JP6246283B2 (ja) 2017-12-13
US20180315745A1 (en) 2018-11-01
JP2018037099A (ja) 2018-03-08
US11127732B2 (en) 2021-09-21
TWI545727B (zh) 2016-08-11
JP5461733B2 (ja) 2014-04-02
JP2013235598A (ja) 2013-11-21
JP2019175473A (ja) 2019-10-10
JP2017005257A (ja) 2017-01-05
TWI450381B (zh) 2014-08-21
JP2014103410A (ja) 2014-06-05

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