TWI556881B - 基板處理裝置及基板處理方法 - Google Patents
基板處理裝置及基板處理方法 Download PDFInfo
- Publication number
- TWI556881B TWI556881B TW102103272A TW102103272A TWI556881B TW I556881 B TWI556881 B TW I556881B TW 102103272 A TW102103272 A TW 102103272A TW 102103272 A TW102103272 A TW 102103272A TW I556881 B TWI556881 B TW I556881B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- substrate processing
- wafer
- scrubber
- cleaning
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 325
- 238000003672 processing method Methods 0.000 title claims description 21
- 230000007246 mechanism Effects 0.000 claims description 147
- 238000004140 cleaning Methods 0.000 claims description 139
- 239000007788 liquid Substances 0.000 claims description 94
- 239000012530 fluid Substances 0.000 claims description 82
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 62
- 230000003068 static effect Effects 0.000 claims description 53
- 238000005201 scrubbing Methods 0.000 claims description 41
- 238000011282 treatment Methods 0.000 claims description 33
- 238000001035 drying Methods 0.000 claims description 28
- 238000004381 surface treatment Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 16
- 238000003825 pressing Methods 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 12
- 239000006061 abrasive grain Substances 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 9
- 238000009991 scouring Methods 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 7
- 239000007795 chemical reaction product Substances 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 150000002259 gallium compounds Chemical class 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 150000002908 osmium compounds Chemical class 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 249
- 239000007789 gas Substances 0.000 description 40
- 239000002245 particle Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 12
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000003028 elevating effect Effects 0.000 description 9
- 238000005192 partition Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 239000004745 nonwoven fabric Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000005381 potential energy Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000007779 soft material Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000002759 woven fabric Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012035365A JP6113960B2 (ja) | 2012-02-21 | 2012-02-21 | 基板処理装置および基板処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201345621A TW201345621A (zh) | 2013-11-16 |
| TWI556881B true TWI556881B (zh) | 2016-11-11 |
Family
ID=48981329
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102103272A TWI556881B (zh) | 2012-02-21 | 2013-01-29 | 基板處理裝置及基板處理方法 |
| TW105131269A TWI616239B (zh) | 2012-02-21 | 2013-01-29 | 擦洗器 |
| TW107101686A TWI669160B (zh) | 2012-02-21 | 2013-01-29 | 基板處理裝置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105131269A TWI616239B (zh) | 2012-02-21 | 2013-01-29 | 擦洗器 |
| TW107101686A TWI669160B (zh) | 2012-02-21 | 2013-01-29 | 基板處理裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US10328465B2 (enExample) |
| JP (2) | JP6113960B2 (enExample) |
| KR (2) | KR101922259B1 (enExample) |
| TW (3) | TWI556881B (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008041250A1 (de) * | 2008-08-13 | 2010-02-25 | Ers Electronic Gmbh | Verfahren und Vorrichtung zum thermischen Bearbeiten von Kunststoffscheiben, insbesondere Moldwafern |
| US20130217228A1 (en) * | 2012-02-21 | 2013-08-22 | Masako Kodera | Method for fabricating semiconductor device |
| JP6113960B2 (ja) * | 2012-02-21 | 2017-04-12 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
| JP6100002B2 (ja) | 2013-02-01 | 2017-03-22 | 株式会社荏原製作所 | 基板裏面の研磨方法および基板処理装置 |
| JP2014220495A (ja) * | 2013-04-12 | 2014-11-20 | レーザーテック株式会社 | 異物除去装置 |
| JP6145334B2 (ja) | 2013-06-28 | 2017-06-07 | 株式会社荏原製作所 | 基板処理装置 |
| US9947572B2 (en) * | 2014-03-26 | 2018-04-17 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus |
| JP6312534B2 (ja) | 2014-06-10 | 2018-04-18 | 株式会社荏原製作所 | 基板洗浄装置 |
| KR102004109B1 (ko) | 2014-10-31 | 2019-07-25 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 세정 장치 및 기판 세정 방법 |
| JP6554864B2 (ja) * | 2015-03-30 | 2019-08-07 | 大日本印刷株式会社 | ペリクル接着剤除去装置及びペリクル接着剤除去方法 |
| US10276365B2 (en) | 2016-02-01 | 2019-04-30 | SCREEN Holdings Co., Ltd. | Substrate cleaning device, substrate processing apparatus, substrate cleaning method and substrate processing method |
| JP6726575B2 (ja) * | 2016-02-01 | 2020-07-22 | 株式会社Screenホールディングス | 基板洗浄装置、基板処理装置、基板洗浄方法および基板処理方法 |
| JP6666214B2 (ja) * | 2016-07-22 | 2020-03-13 | 株式会社荏原製作所 | 基板の表面を研磨する装置および方法、プログラムを記録したコンピュータ読み取り可能な記録媒体 |
| JP7052280B2 (ja) * | 2016-11-29 | 2022-04-12 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| JP6882017B2 (ja) * | 2017-03-06 | 2021-06-02 | 株式会社荏原製作所 | 研磨方法、研磨装置、および基板処理システム |
| JP6836432B2 (ja) * | 2017-03-22 | 2021-03-03 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
| JP6920849B2 (ja) * | 2017-03-27 | 2021-08-18 | 株式会社荏原製作所 | 基板処理方法および装置 |
| JP6873782B2 (ja) * | 2017-03-29 | 2021-05-19 | 株式会社荏原製作所 | 研磨装置、研磨方法、およびプログラムを記録したコンピュータ読み取り可能な記録媒体 |
| JP6779173B2 (ja) * | 2017-05-18 | 2020-11-04 | 株式会社荏原製作所 | 基板処理装置、プログラムを記録した記録媒体 |
| JP6908496B2 (ja) * | 2017-10-25 | 2021-07-28 | 株式会社荏原製作所 | 研磨装置 |
| JP6974116B2 (ja) | 2017-10-27 | 2021-12-01 | 株式会社荏原製作所 | 基板保持装置並びに基板保持装置を備えた基板処理装置および基板処理方法 |
| JP2019091746A (ja) * | 2017-11-13 | 2019-06-13 | 株式会社荏原製作所 | 基板の表面を処理する装置および方法 |
| JP6887371B2 (ja) * | 2017-12-20 | 2021-06-16 | 株式会社荏原製作所 | 基板処理装置、基板処理装置の制御方法、プログラムを格納した記憶媒体 |
| JP7020986B2 (ja) * | 2018-04-16 | 2022-02-16 | 株式会社荏原製作所 | 基板処理装置および基板保持装置 |
| CN108656721B (zh) * | 2018-05-24 | 2023-10-13 | 中策橡胶集团股份有限公司 | 一种反光带热转印贴合设备 |
| KR102570220B1 (ko) * | 2018-05-29 | 2023-08-25 | 주식회사 케이씨텍 | 기판 처리 장치 |
| JP2019216207A (ja) * | 2018-06-14 | 2019-12-19 | 株式会社荏原製作所 | 基板処理方法 |
| JP7055720B2 (ja) * | 2018-08-10 | 2022-04-18 | 株式会社荏原製作所 | 基板回転装置、基板洗浄装置および基板処理装置ならびに基板回転装置の制御方法 |
| JP7037459B2 (ja) * | 2018-09-10 | 2022-03-16 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
| JP7145019B2 (ja) * | 2018-09-19 | 2022-09-30 | 株式会社Screenホールディングス | レシピ変換方法、レシピ変換プログラム、レシピ変換装置および基板処理システム |
| JP6979935B2 (ja) * | 2018-10-24 | 2021-12-15 | 三菱電機株式会社 | 半導体製造装置および半導体製造方法 |
| US11745227B2 (en) * | 2019-01-31 | 2023-09-05 | Applied Materials, Inc. | Substrate cleaning devices and methods thereof |
| CN110332616B (zh) * | 2019-06-20 | 2023-10-20 | 宁波奥克斯电气股份有限公司 | 一种空调器室内机自清洁装置及其控制方法 |
| CN110624893B (zh) * | 2019-09-25 | 2022-06-14 | 上海华力集成电路制造有限公司 | 一种兆声波组合气体喷雾清洗装置及其应用 |
| CN112946957B (zh) * | 2019-11-26 | 2023-06-02 | 上海微电子装备(集团)股份有限公司 | 光配向装置、双台光配向装置、光配向方法及光配向系统 |
| CN110802501B (zh) * | 2019-11-28 | 2024-06-25 | 山东润通齿轮集团有限公司 | 一种模具流体抛光设备及其抛光方法 |
| IT202000016279A1 (it) * | 2020-07-06 | 2022-01-06 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo semiconduttore in carburo di silicio con migliorate caratteristiche |
| KR102396431B1 (ko) * | 2020-08-14 | 2022-05-10 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 반송 방법 |
| JP7682690B2 (ja) * | 2021-05-11 | 2025-05-26 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| CN114038734A (zh) * | 2021-11-04 | 2022-02-11 | 至微半导体(上海)有限公司 | 一种解决先进节点的图案化崩毁的清洗工艺 |
| JP2024046219A (ja) * | 2022-09-22 | 2024-04-03 | 芝浦メカトロニクス株式会社 | 洗浄装置 |
| JP2024047291A (ja) * | 2022-09-26 | 2024-04-05 | 株式会社Screenホールディングス | 基板処理装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201345621A (zh) | 2013-11-16 |
| KR101922259B1 (ko) | 2018-11-26 |
| KR101996763B1 (ko) | 2019-07-04 |
| JP6113960B2 (ja) | 2017-04-12 |
| TW201703880A (zh) | 2017-02-01 |
| US20130213437A1 (en) | 2013-08-22 |
| US20190262870A1 (en) | 2019-08-29 |
| TW201811454A (zh) | 2018-04-01 |
| JP2013172019A (ja) | 2013-09-02 |
| US10799917B2 (en) | 2020-10-13 |
| US11192147B2 (en) | 2021-12-07 |
| KR20180121438A (ko) | 2018-11-07 |
| TWI616239B (zh) | 2018-03-01 |
| JP6334026B2 (ja) | 2018-05-30 |
| US10328465B2 (en) | 2019-06-25 |
| KR20130096185A (ko) | 2013-08-29 |
| US20190262869A1 (en) | 2019-08-29 |
| JP2017118146A (ja) | 2017-06-29 |
| TWI669160B (zh) | 2019-08-21 |
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