200922701 六、發明說明: 【發明所屬之技術領域】 本發明係關於-種基板洗淨㈣,其 :=溶液之清洗液至基极而清洗該基板,並二 【先前技術】 口:製造半導體裝置之製程中,洗淨基板是用來增加產 =率之重要程序。此基板洗淨程序例如於基板拋光製程 後貫施,以從基板去除不想要的碎粒。附圖之第28和別 圖顯示基板洗淨裝置之例子。如第2δ和29 _示,基板 |先淨裝置具有··基板固持機構_,係組構成用以固持基 反W,馬達1(Η,係組構成用以旋轉該基板固持機構⑽; 固定蓋102’設在基板W之周圍;以及喷嘴1〇3,用來供應 純水作為清洗液至該基板W之表面以便洗淨該基板w。於 基板W之清洗期間’基板¥係以低速旋轉,且純水係被供 應至基板W之表面。於乾燥基板w之期間,基板w例如以 大約1500轉/刀4(min )之高速旋轉,以將純水甩離基板 W之表面。從基絲之純水由固定蓋⑽捕獲並回收。 當純水衝撞於固定蓋1〇2上時,純水可能會彈回成小 水滴,而再附著於基板W之表面。此外,基板w之高速旋 轉會在固疋蓋102内產生旋轉氣流。此旋轉氣流係載送純 水之細微水滴(亦即’純水之霧氣(mist)),而該霧氣亦會 附著於基板W之表面。附著於基板W之表面之純水之水滴 孝務氣會在基板上形成水印(water mark)。這些水痕可能 3 320660 200922701 不利地衫響形成在基板w上之裝置,而造成產品良率的滅 ' 使用化學洛液而非純水作為清洗液時,亦可能由於相 同原□而引致基板W之背部污染(back c〇ntaminati〇n)。 因此:防止基板之水痕和背部污染係益形重要。 最L 已建曦用諾塔哥尼乾燥法(Rotagoni drying) 作為乾秌衣私以防止於基板上產生水痕。依照諾塔哥尼乾 燥法’ IPA療汽(異丙醇和氮氣之混合物)和純水從二個平 行喷,供應至&轉中之基板之表面,同時各個喷嘴係朝基 ,之k向方向移動以便乾燥基板之表面。諾塔哥尼乾燥法 能夠充分乾燥基板’甚至當基板以例如150至3GG轉/分鐘 之=對低速範圍旋轉時亦然。然而,即使板甚以讓轉/ 刀知或更低%轉時’當純水魅於固定蓋上時純水仍可能 轉支成水錢霧氣。這些水滴和霧氣可能會附著在基板之 表面。 【發明内容】200922701 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate cleaning (four), which: = cleaning solution of the solution to the base to clean the substrate, and second [prior art] port: manufacturing a semiconductor device In the process of manufacturing, cleaning the substrate is an important procedure for increasing the yield. This substrate cleaning process is applied, for example, after the substrate polishing process to remove unwanted debris from the substrate. An example of a substrate cleaning apparatus is shown in Fig. 28 and the drawings. As shown in the second δ and 29 _, the substrate|cleaning device has a substrate holding mechanism _, the system is configured to hold the base inverse W, and the motor 1 is configured to rotate the substrate holding mechanism (10); 102' is disposed around the substrate W; and a nozzle 1〇3 for supplying pure water as a cleaning liquid to the surface of the substrate W to clean the substrate w. During the cleaning of the substrate W, the substrate is rotated at a low speed. And the pure water system is supplied to the surface of the substrate W. During the drying of the substrate w, the substrate w is rotated, for example, at a high speed of about 1500 rpm/knife 4 (min) to separate the pure water from the surface of the substrate W. The pure water is captured and recovered by the fixed cover (10). When pure water hits the fixed cover 1〇2, the pure water may bounce back into small water droplets and adhere to the surface of the substrate W. In addition, the substrate w rotates at a high speed. A swirling airflow is generated in the solid cover 102. This swirling airflow carries fine water droplets of pure water (i.e., 'mist of pure water), and the mist also adheres to the surface of the substrate W. Attached to the substrate The water droplets on the surface of W will form a watermark on the substrate (water mar k). These water marks may 3 320660 200922701 unfavorably slamming the device formed on the substrate w, and causing the product yield to be extinguished 'When using chemical liquid instead of pure water as the cleaning liquid, it may also be due to the same original It causes back contamination of the substrate W. Therefore, it is important to prevent water marks and back contamination on the substrate. Most L has been built using Rotagoni drying as a dry coat. Privately to prevent water marks on the substrate. According to the Notagoni drying method 'IPA treatment steam (mixture of isopropanol and nitrogen) and pure water from two parallel sprays, supply to the surface of the & transferred substrate, while Each nozzle is moved toward the base in the k-direction to dry the surface of the substrate. The Notagoni drying method is capable of sufficiently drying the substrate 'even when the substrate is rotated at a low speed range, for example, 150 to 3 GG rpm. Even if the board is even so that the turning / knife knows or lower % turn, when the pure water is charmed on the fixed cover, the pure water may still be converted into a water mist. These water droplets and mist may adhere to the surface of the substrate. content】
之目的係提供—種基板洗淨裝置,其能夠防』 '土,、之、面上產生水痕並防止基板之背面污染。 '、、成上述目的,依照本發明之一態樣係提供一種 =裝置,包含:基板固持機構,組構成用以水恤 夕二如#2轉機構’組構成使藉由該基板111持機構所固裝 以i旋轉! ’㈣供射嘴’用來供應清洗液至該基板; 盖’设在該基板之周圍,並能以與該基板實質』 旋轉。該旋轉蓋具有成形為環繞該基板之形壯 、α、,而該内周表面係從其底端至其頂端經向朝内 320660 4 200922701 k. 地傾斜。 β於本發明之lie佳‘4樣,該基板洗淨裝置復包含固定 盍’其係成形為覆蓋該旋轉蓋之整個外周圍的形狀。 於本發明之較佳態樣,該基板洗淨裝置復包含:相對 成在該基板與該旋轉蓋之間提供沿著該基 板之奴轉軸之相對移動。 機構Γ=較佳態樣’該旋轉蓋係安裝在該基板固持 棘絲板固持機構具有排放孔,該排放孔係具有位 端之上開口’且該排放孔向下向外地傾斜。 於本發明之較佳態檨, + 包括弧線之垂直剖面,而现之該内周表面係具有 〜内周表面相對於水平面之角度 =:ί端之最小值漸漸增加至下端之最大值。 該旋==態樣’該基板洗淨裝置復包含:設在 邊万疋轉盍之偟向朝内側之内 同該旋轉蓋一起旋轉。 疋轉盘。該内部旋轉蓋可連 於本發明之較佳態樣,該 該外周表面具有弧形之垂直…疋轉蓋具有外周表面, 周表面係具有位於與由該基板固持^内部旋轉蓋之該外 上表面相同之高度或猶微低些的上端所固持之該基板之 於本發明之較佳態樣, 臂’其係組構成使該内部旋轉^洗淨裝置復包含:支標 支樓臂配置於該内部旋轉蓋歲旋轉蓋彼此耦接。該 、μ疋轉蓋之間之間隙中,並 320660 5 200922701 成形為當該内旋轉蓋與該旋轉蓋旋轉時可在該間隙中產生 向下氣流的形狀。 依照本發明,因為旋轉蓋實質上與該基板以相同的速 度旋轉,故該基板與旋轉蓋之間之相對速度實質上為零。 因此,當清洗液衝撞於該旋轉蓋上時,該清洗液幾乎不會 產生水滴和霧氣。如此一來,能夠防止產生基板之水痕和 背部污染。從基板去除至旋轉蓋之清洗液會在離心力之作 用下沿著旋轉蓋之内周表面快速地向下排放。因此,清洗 液不會留存在旋轉蓋之内周表面上,而因此幾乎不會產生 其水滴和霧氣。當基板和旋轉蓋之間之相對速度實質上為 零時,在旋轉蓋内部幾乎不會形成旋轉氣流。因此,可防 止清洗液之霧氣被旋轉氣流載送而附著於基板上。 由下列之詳細說明,配合所附圖式,本發明之上述和 其他態樣、特徵和其他優點將變得很清楚,其中該等圖式 藉由舉例之方式例示本發明之較佳實施例。 【實施方式】 現將參照圖式說明依照本發明實施例之基板洗淨裝 置。相同或對應之部分將標以相同或對應之參考符號。 第1圖為依照本發明第一實施例之基板洗淨裝置之示 意垂直剖面圖,而第2圖為第1圖中所示之基板洗淨裝置 之平面圖。 如第1圖中所示,基板洗淨裝置包含:基板固持機構 1,係組構成用以水平地保持基板W ;馬達(旋轉機構)2, 係組構成經由該基板固持機構1使該基板W以其自己的中 6 320660 200922701 〜軸旋轉;旋轉蓋3,# 用來供應純水做為清:液之周圍;,前噴嘴4, 以不使用& λ 〜土板w之表面(前表面)。可 不=用,、4水蚊削b學料料清鎌。 ^ i板固持機構1句合 W FI »4^ ""數個夾爪10,係組構成3Mi 土傲W之周圍邊緣;圓形第〜 X人住 於其上;支樓該第_ D ,夹爪10係安裝 具有凹部可容丄:二之中空第一她12A; U谷置該第一工作台 台此和切該第U作台中二工作 11A、铱-丄 又保釉1Z13。弟一工作厶The object of the invention is to provide a substrate cleaning device capable of preventing water stains on the surface of the soil, and preventing backside contamination of the substrate. In order to achieve the above object, according to one aspect of the present invention, a device is provided, comprising: a substrate holding mechanism, and the group is configured to form a group of water-shoes, such as a #2 rotating mechanism, such that the substrate 111 is held by the substrate 111. Mounted with i rotation! The 'fourth supply nozzle' is used to supply cleaning liquid to the substrate; the cover ' is disposed around the substrate and is capable of substantially rotating with the substrate. The rotating cover has a shape that is shaped to surround the substrate, and the inner peripheral surface is inclined from the bottom end to the top end thereof toward the inner side 320660 4 200922701 k. In the case of the present invention, the substrate cleaning apparatus further comprises a fixed 盍' which is shaped to cover the entire outer periphery of the rotary cover. In a preferred aspect of the invention, the substrate cleaning apparatus further includes: relative movement between the substrate and the rotating cover to provide a slave axis along the substrate. Mechanism Γ = Preferred Aspect The rotating cover is mounted on the substrate holding ratchet holding mechanism having a discharge opening having an opening above the end and the discharge opening is inclined downwardly outward. In a preferred aspect of the invention, + comprises a vertical section of the arc, and now the inner peripheral surface has an angle of the inner circumference surface with respect to the horizontal plane =: the minimum value of the ί end gradually increases to the maximum value of the lower end. The substrate cleaning device comprises: the substrate cleaning device is disposed to rotate with the rotating cover in a side of the side of the side of the turn.疋 turntable. The inner rotating cover can be connected to the preferred aspect of the present invention, the outer peripheral surface having an arc-shaped vertical direction... the flip cover has an outer peripheral surface, and the peripheral surface has the outer surface of the inner rotating cover held by the substrate The substrate having the same height or the lower end of the substrate is adhered to the preferred embodiment of the present invention, and the arm is configured to include the internal rotary cleaning device: the branch arm is disposed The inner rotating cover year-old rotating cover is coupled to each other. In the gap between the cover and the cover, 320660 5 200922701 is shaped to generate a downward airflow in the gap when the inner rotary cover and the rotary cover rotate. According to the present invention, since the rotary cover rotates substantially at the same speed as the substrate, the relative speed between the substrate and the rotary cover is substantially zero. Therefore, when the cleaning liquid collides with the rotary cover, the cleaning liquid hardly generates water droplets and mist. In this way, it is possible to prevent water marks and back contamination of the substrate from being generated. The cleaning liquid removed from the substrate to the rotating cover is quickly discharged downward along the inner peripheral surface of the rotary cover under the action of centrifugal force. Therefore, the cleaning liquid does not remain on the inner peripheral surface of the rotary cover, and thus water droplets and mist are hardly generated. When the relative speed between the substrate and the rotary cover is substantially zero, a swirling air flow is hardly formed inside the rotary cover. Therefore, it is possible to prevent the mist of the cleaning liquid from being carried by the swirling airflow and adhering to the substrate. The above and other aspects, features, and other advantages of the present invention will become more apparent from the aspects of the invention. [Embodiment] A substrate cleaning apparatus according to an embodiment of the present invention will now be described with reference to the drawings. The same or corresponding parts will be marked with the same or corresponding reference signs. Fig. 1 is a schematic vertical sectional view of a substrate cleaning apparatus according to a first embodiment of the present invention, and Fig. 2 is a plan view of the substrate cleaning apparatus shown in Fig. 1. As shown in FIG. 1, the substrate cleaning apparatus includes a substrate holding mechanism 1 configured to horizontally hold the substrate W, and a motor (rotating mechanism) 2, and the system is configured to hold the substrate W via the substrate holding mechanism 1. With its own 6 320660 200922701 ~ axis rotation; rotating cover 3, # used to supply pure water as clear: around the liquid;, front nozzle 4, to not use & λ ~ soil plate w surface (front surface ). Can not = use, 4 water mosquitoes b material materials clear. ^ i board holding mechanism 1 sentence W FI »4^ "" several jaws 10, the group constitutes the surrounding edge of 3Mi Tuo W; round number ~ X people live on it; branch building the first _ D, the jaw 10 is installed with a recess to accommodate: two hollow first she 12A; U valley set the first workbench and cut the U to work in the second work 11A, 铱-丄 and glaze 1Z13. Brother, work, 厶
ilA弟一工作台11B、第一支撐軸12八、 作D =心方式配置。旋轉蓋3固定於圓形第二工作:11B: 工作台11B與該旋轉蓋3係關心方式配置。 九爪10所固持住之基板w和_蓋3仙同心方式定ilA brother a workbench 11B, the first support shaft 12 eight, D = heart mode configuration. The rotary cover 3 is fixed to the circular second operation: 11B: The table 11B and the rotary cover 3 are arranged in a care mode. The substrate w and _ cover 3 cents held by the nine claws 10 are concentric
第支撐軸12A和第二支撐軸12B藉由線性運動導引 ,構15而彼此耦接。此線性運動導引機構15係組構成於 =七支撐軸12A和第二支撐軸12B之間傳送轉矩,同時允 '第支撐軸12A和第二支撐轴12B相對於彼此朝其縱向 (亦即,沿著其旋轉軸方向)移動。線性運動導引機構15之 /體例子包含滾珠鍵槽軸承(ball spline bearing)。 焉達2經由齒輪柄接到弟一支撑轴12B之外周表面。 馬達2之轉矩經由線性運動導引機構15傳送至第一支撐軸 19a ’藉此旋轉由夾爪10所固持之基板w。第一工作台11A 之方疋轉和第二工作台11B之旋轉由於線性運動導引機構15 7 320660 200922701 而於所有時間係彼此同夕。詳言之,基板W和旋轉蓋3彼 此整合地旋轉,彼此之問的相對速度為零。基板W和旋轉 蓋3之間可以有些微的速度差。基板w和旋轉蓋3可以藉 由不同的旋轉機構旋轉。於此說明書中,以實質相同的速 度旋轉基板W和旋轉蓋3係意指以實質相同的角速度使基 板W和旋轉蓋3旋轉於相同的方向,而非表示使基板¥和 旋轉蓋3旋轉於相反的方向。 使用為垂直移動機構之制動器23經由耦接機構24耦 接至第支樓軸12A。此麵接機構24組構成用以傳送制動 ’器23(其作動於旋轉軸方向)之驅動力至第-支撑軸12A, 同時允許該第一支撐軸12A以其自己的軸旋轉。如第3圖 中所示,制動器23經由麵接機構24垂直地移動該第一工 作° Y第支樓輛12A、和夾爪10(亦即,基板W)。制 _供基板^旋轉蓋 第支標轴12A在j:中容署古.^ + 17,其係_至清洗置有.後㈣(back^_The first support shaft 12A and the second support shaft 12B are coupled to each other by a linear motion guide structure 15. The linear motion guiding mechanism 15 is configured to transmit torque between the seven support shaft 12A and the second support shaft 12B while allowing the 'the support shaft 12A and the second support shaft 12B to face each other with respect to each other (ie, , moves along its axis of rotation). The body example of the linear motion guiding mechanism 15 includes a ball spline bearing. The Tida 2 is connected to the outer peripheral surface of the support shaft 12B via the gear shank. The torque of the motor 2 is transmitted to the first support shaft 19a' via the linear motion guiding mechanism 15 to thereby rotate the substrate w held by the jaws 10. The rotation of the first table 11A and the rotation of the second table 11B are simultaneous with each other at all times due to the linear motion guiding mechanism 15 7 320660 200922701. In detail, the substrate W and the rotary cover 3 are integrally rotated with each other, and the relative speed of each other is zero. There may be a slight speed difference between the substrate W and the rotary cover 3. The substrate w and the rotary cover 3 can be rotated by different rotating mechanisms. In this specification, rotating the substrate W and the rotary cover 3 at substantially the same speed means rotating the substrate W and the rotary cover 3 in the same direction at substantially the same angular velocity, instead of rotating the substrate ¥ and the rotary cover 3 Opposite Direction. The brake 23, which is a vertical moving mechanism, is coupled to the first floor shaft 12A via a coupling mechanism 24. This face joining mechanism 24 constitutes a driving force for transmitting the brake member 23 (which acts in the direction of the rotating shaft) to the first support shaft 12A while allowing the first support shaft 12A to rotate on its own axis. As shown in Fig. 3, the brake 23 vertically moves the first work unit Y 12A and the jaws 10 (i.e., the substrate W) via the face joining mechanism 24. System _ for the substrate ^ rotating cover The first axis 12A in j: Zhongrong Department of the ancient. ^ + 17, its system _ to the cleaning set. After (four) (back ^ _
至乾燥氣體供應源==廡和氣體喷嘴18,其係柄接 清洗液,並且經由後噴嘴廡原係儲存純水於其中作為 面。該乾燥氣體供應为〜該純水至基板W之後表 乾燥氣體,並且經由;氣或乾燥空氣於其中作為 之後表面。由①體喷嘴18供應乾燥氣體至該基板W 前喷嘴4指向基板w 顯示之純水供應源(亦即 之中央。前喷嘴4輕接至圖中未 ’/月洗液供應源),並且從該純水 320660 8 200922701 供應源供應純水至基板w之前表 士 哥尼乾燥法之二個平行喷嘴20^;^執行話塔 上。喷嘴20用來供應之 至基板W之前表面上。喷嘴21用來供=體·^合物) 表面上,以便防止基板w ,…水至基板W之前 移動於基板W之徑向方向。 噴嘴20和21可 第4圖為基板固持機構κ + 所示,第二工作台1以且 6 如弟1和4圖中 25。排放孔25具有位於旋轉其中之複數個排放孔 -作台UB之下表面之下之上開口和位於第二 25為橢圓形孔,其係延伸於旋轉罢3 =圖中所示,排放孔 朝外地朝向其下開口傾_。一7之周圍方向’並徑向 、;月洗液(例如純水)和從噴嘴 、供應之 噴嘴18之氣體和周a = 彳,、應之純水、以及來自氣體 放孔25排放、。錢彻(料為空氣)係經由排 來排辅助排,26 ’其係用 體(清洗液、純水)。這4L輔助放^作台11β之間之液 〜稀助排放孔26具有定位於第一工 作台11Α與第二工作台i1D η 之間之間隙中的上開口、和位 在第二工作台⑽之下表面之下開口。輔助排放孔㈣如 同排放孔25 ’㈣朝外地朝向其下開口傾斜。 液體出口通道3〇和氣體出口通道31設在排放孔25和 Ϊ助排放孔26之下方.之下方。液體出口通道30和氣 體出口通道31為環形。、、右μ , 夜體出口通道3〇係位於該氣體出 320660 9 200922701 口通道31之徑向外側。以此種配置方式,從排放孔25和 輔助排放孔26排放之液體和氣體會由於離心力而彼此分 離’而使得液體流入液體出口通道3〇,而氣體流入氣體: 口通道31。 第5圖顯示液體之路徑,第6圖顯示氣體之路徑。氣 體出口通道31摩馬接至吸引源32(譬如真空栗)。如第6圖 中所示’吸引源32之運作係產生自基板w之前表面經過排 (放孔25和氣體出口通道31流動的氣體的向下氣流。 壤形固定板35設在第二m1B之下方,並與第二 ^乍台UB之下表面間具有小的餘隙。環形时板35、係用 來防止f圍的氣體被第二工作台11β之旋轉所授動。向下 ϋί “大:28固定至第二工作台11β之周圍。此裙28 H = 2放孔25和辅助排放孔26排放之液體的飛 放並亦用來使液體能夠於遠離基板^位置被釋放。 κ 鐘?轉蓋3具有㈣表面之形狀,以便環繞由基板固持 方固:一繼3之此内周表面具有二 3之内W朝向内周表面之 二: 徑向朝内地朝向其上端傾斜,二: 千面之間的角心(參看第^)係少於9〇度。和欠 含二Γ所示,旋轉蓋3之内周表面之垂直剖面包 限於第】圖令所-少,# 内周表面之垂直剖面不 之Μ財而 不之此形狀。如第7圖中所示 之内周表面可以具有包括_線之垂直剖面,亦;轉:: 320660 10 200922701 的垂直剖面。於第7圖中,内周表面和水平面之間的角度 從旋轉蓋3之上端之最小值漸漸地增加至下端之最大值 (0 1< 0 2)。第7圖中所示之旋轉蓋3之内周表面能夠減 少液體衝撞在旋轉蓋3上之衝擊,並由於離心力而使液體 能夠沿著内周表面快速地向下流。内周表面於其上端之相 對於水平面之角度最好實質上為0度。 如第2圖中所示,旋轉蓋3之上端具有複數個凹部3a, 其各具有對應於各夾爪10形狀之形狀。旋轉蓋3之上端之 直徑猶微大於基板W之直徑。 如第1圖中所示,旋轉蓋3之下端係定位於排放孔25 之各上開口之部分之上,而使得沿著旋轉蓋3之内周表面 向下流動之液體能夠平穩地被引入排放孔25。若排放孔25 之上開口位於遠離該旋轉蓋3之下端之位置,則沿著旋轉 蓋3之内周表面向下流動之液體將擊中第二工作台11B上 表面且將不會平穩地流入排放孔25。依照本實施例之上述 配置方式,液體不會衝撞在第二工作台11B之上表面上。 因此,液體係平穩地流入排放孔2 5中。 現將說明依照第一實施例之基板洗淨裝置之操作。 供應馬達2能量以旋轉基板W和旋轉蓋3。於此狀態, 前喷嘴4和後喷嘴17供應純水至基板W之前表面(上表面) 和後表面(下表面),以便用純水沖洗基板W之整體。供應 至基板W之純水係藉由離心力散佈在前表面和後表面之 上,由此沖洗基板W之所有表面。從旋轉中之基板W去除 的純水係由旋轉蓋3捕獲,並流入排放孔25中。當如此沖 11 320660 200922701 洗基板W時,二個喷嘴2 0、21 待命位置。 係位在其遠離基板W之給定 然後’停止從前喷嘴4供應純水, + >且將别喷嘴4移至 运離基板w之給定待命位置。將二個噴嘴2〇、21移至美 W上方之操作位置。在基板W以⑽至3GG術分^之= 範圍旋轉之同時,喷嘴20係供應IPA蒸汽、而噴嘴^係 供應純水至基板w之前表面。於操作期間,後噴嘴Η係供 應純水至基板W之後表面。二個噴嘴2〇、21係同時朝基板 W之徑向方向移動,藉此乾燥基板?之前表面(上表面 +其後,將二個喷嘴2G、21移至其待命位置,並:止從 後喷嘴17供應純水。然後,基板w以1〇〇〇至丨5〇〇轉/分 鐘之高速範圍_,而從基板W之後表面去除純水。於^匕 操作期間,氣體喷嘴18係供應乾燥氣體至基板w之後表 面。以此種方式,乾燥基板W之後表面。乂To the dry gas supply source == 庑 and the gas nozzle 18, the handle is connected to the cleaning liquid, and the pure water is stored therein as a surface via the rear nozzle. The dry gas is supplied as a dry gas to the surface of the substrate W, and is passed through the gas or dry air as a rear surface. The dry gas is supplied from the one-body nozzle 18 to the substrate W. The front nozzle 4 is directed to the pure water supply source (that is, the center of the substrate w. The front nozzle 4 is lightly connected to the non-monthly liquid supply source in the figure), and The pure water 320660 8 200922701 supply source of pure water to the substrate w before the two parallel nozzles of the Viskini drying method 20 ^; ^ execution on the tower. The nozzle 20 is used to supply the surface to the front surface of the substrate W. The nozzle 21 is used to supply the surface of the substrate W to prevent the substrate w, ... from moving to the radial direction of the substrate W before the substrate W. The nozzles 20 and 21 can be shown in Fig. 4 as the substrate holding mechanism κ + , and the second table 1 and 6 are as shown in Figs. The discharge hole 25 has a plurality of discharge holes located therein for rotation, and an opening above the lower surface of the table UB and an elliptical hole at the second portion 25, which extends in rotation 3 = as shown in the figure, the discharge hole faces The field is tilted towards its lower opening. The surrounding direction of a 7' is radial, and the monthly washing liquid (for example, pure water) and the gas from the nozzle, the nozzle 18 supplied, and the circumference a = 彳, the pure water, and the gas discharge hole 25 are discharged. Qian Che (which is expected to be air) is discharged through the row, 26's body (cleaning liquid, pure water). The liquid to lean drain hole 26 between the 4L auxiliary stage 11β has an upper opening positioned in a gap between the first stage 11Α and the second stage i1Dη, and is located at the second stage (10) Open under the lower surface. The auxiliary discharge hole (4) is inclined toward the lower opening thereof as the discharge hole 25' (4) toward the outside. The liquid outlet passage 3 and the gas outlet passage 31 are provided below the discharge hole 25 and the auxiliary discharge hole 26. The liquid outlet passage 30 and the gas outlet passage 31 are annular. , right μ, the night body exit channel 3 is located radially outward of the gas outlet 320660 9 200922701 port channel 31. In this arrangement, the liquid and gas discharged from the discharge hole 25 and the auxiliary discharge hole 26 are separated from each other by centrifugal force, so that the liquid flows into the liquid outlet passage 3, and the gas flows into the gas: port passage 31. Figure 5 shows the path of the liquid and Figure 6 shows the path of the gas. The gas outlet passage 31 is connected to a suction source 32 (e.g., a vacuum pump). As shown in Fig. 6, the operation of the attraction source 32 is generated from the surface before the substrate w passes through the discharge (the downward flow of the gas flowing through the discharge hole 25 and the gas outlet passage 31. The soil-shaped fixing plate 35 is disposed in the second m1B Below, and with a small clearance between the lower surface of the second UB. The annular plate 35 is used to prevent the gas surrounding f from being actuated by the rotation of the second table 11β. : 28 is fixed to the periphery of the second table 11β. The skirt 28 H = 2 the discharge of the liquid discharged from the hole 25 and the auxiliary discharge hole 26 is also used to enable the liquid to be released away from the substrate. κ 钟? The flip cover 3 has a shape of a (four) surface so as to be surrounded by the substrate; the inner peripheral surface has a width of 2 to the inner peripheral surface of the inner surface: a radially inwardly inclined toward the upper end thereof, two: The angle between the faces (see ^) is less than 9 degrees. And the undercuts indicate that the vertical profile of the inner peripheral surface of the rotating cover 3 is limited to the first] The vertical section is not rich in this shape. The inner peripheral surface as shown in Fig. 7 may have a line including _ Vertical section, also; Turn:: 320660 10 200922701 vertical section. In Figure 7, the angle between the inner circumferential surface and the horizontal plane gradually increases from the minimum value of the upper end of the rotating cover 3 to the maximum value of the lower end (0 1 < 0 2) The inner peripheral surface of the rotary cover 3 shown in Fig. 7 can reduce the impact of liquid collision on the rotary cover 3, and the liquid can be rapidly flowed down along the inner peripheral surface due to the centrifugal force. The angle of the surface to the upper end with respect to the horizontal plane is preferably substantially 0. As shown in Fig. 2, the upper end of the rotary cover 3 has a plurality of recesses 3a each having a shape corresponding to the shape of each of the jaws 10. The diameter of the upper end of the rotary cover 3 is slightly larger than the diameter of the substrate W. As shown in Fig. 1, the lower end of the rotary cover 3 is positioned above the upper opening of the discharge hole 25 so that the rotary cover 3 is provided along the rotary cover 3 The liquid flowing downward from the inner peripheral surface can be smoothly introduced into the discharge hole 25. If the opening above the discharge hole 25 is located away from the lower end of the rotary cover 3, it flows downward along the inner peripheral surface of the rotary cover 3. The liquid will hit the second table 11B on the table The surface will not smoothly flow into the discharge hole 25. According to the above configuration of the embodiment, the liquid does not collide with the upper surface of the second stage 11B. Therefore, the liquid system smoothly flows into the discharge hole 25. The operation of the substrate cleaning apparatus according to the first embodiment will be explained. The motor 2 is supplied with energy to rotate the substrate W and the rotary cover 3. In this state, the front nozzle 4 and the rear nozzle 17 supply pure water to the front surface (upper surface) of the substrate W. And a rear surface (lower surface) to rinse the entirety of the substrate W with pure water. The pure water supplied to the substrate W is dispersed on the front surface and the rear surface by centrifugal force, thereby rinsing all surfaces of the substrate W. The pure water removed by the rotating substrate W is captured by the rotary cover 3 and flows into the discharge hole 25. When the substrate W is washed 11 320660 200922701, the two nozzles 20, 21 are in standby position. The line is positioned away from the substrate W and then 'stops supplying pure water from the front nozzle 4, + > and moves the nozzle 4 to a given standby position away from the substrate w. Move the two nozzles 2, 21 to the operating position above the US W. While the substrate W is rotated in the range of (10) to 3GG, the nozzle 20 supplies IPA vapor, and the nozzle supplies pure water to the surface before the substrate w. During operation, the rear nozzle tethers supply pure water to the surface behind the substrate W. The two nozzles 2, 21 are simultaneously moved in the radial direction of the substrate W, thereby drying the substrate. The front surface (upper surface + thereafter, the two nozzles 2G, 21 are moved to their standby positions, and: pure water is supplied from the rear nozzle 17. Then, the substrate w is 1 〇〇〇 to 〇〇 5 rpm The high speed range _, and pure water is removed from the surface after the substrate W. During the operation, the gas nozzle 18 supplies dry gas to the surface after the substrate w. In this manner, the surface of the substrate W is dried.
當乾燥基板W之前表面(上表面)時,如上所述,將純 水供應至基板W之前表面和後表面。藉由離^力從基板w 去除此純水並移至旋轉蓋3。因為旋轉蓋3和基板w以相 同速度旋轉,因此當純水衝撞於旋轉蓋3之内周表面上 ,,其幾乎不會飛散。此外,在以相同的速度旋轉之旋轉 蓋3和基板W之間的空間只會產生些微的旋轉氣流。因此, 純水之霧氣不會由旋轉氣流載送至基板w。如此一來,可 防止在基板w上產生水痕。再者,因為旋轉蓋3之内周表 面係徑向朝内地傾斜,因此由旋轉蓋3之旋轉所產生之離 心力會導致純水沿著旋轉蓋3之内周表面快速地向下方流 320660 12 200922701 & 至排放孔25。 體。I之乾燥終止後,停止自氣體喷嘴18供應乾燥氣When the front surface (upper surface) of the substrate W is dried, as described above, pure water is supplied to the front surface and the rear surface of the substrate W. This pure water is removed from the substrate w by the force and moved to the rotary cover 3. Since the rotary cover 3 and the substrate w are rotated at the same speed, when pure water collides with the inner peripheral surface of the rotary cover 3, it hardly scatters. Further, the space between the rotary cover 3 and the substrate W which is rotated at the same speed produces only a slight swirling air current. Therefore, the mist of pure water is not carried to the substrate w by the swirling gas flow. In this way, water marks on the substrate w can be prevented from occurring. Furthermore, since the inner peripheral surface of the rotary cover 3 is inclined radially inward, the centrifugal force generated by the rotation of the rotary cover 3 causes the pure water to rapidly flow downward along the inner peripheral surface of the rotary cover 3 320660 12 200922701 & to the discharge hole 25. body. After the drying of I is terminated, the supply of dry gas from the gas nozzle 18 is stopped.
定位於龍^所不,制動器23將基板w舉升直到基板W L 3上方為止。藉由移載機器人之手(圖中未顯 不)將經域之基板w從基板固持機構丨移走。 基板= ^ ’當_基板W之前表面時和當乾燥 言,當乾燥基板Sw ’^反?係定位於不同的高度。舉例而 f示之正常位基板^位在第1圖中所 舉w 面,虽乾焯基板w之後表面時,俜 牛升該基板w至旋轉蓋3之上端之位置。詳係 板W舉升直到旋轉罢3 係將基 前表面和後表面Γ 端定位於基板?之 所不之此位置,基板w和旋轉蓋3之間之距=圖中 因此:可防止水滴和霧氣從基板W之後表面流至前=小。 =9圖為依照本發明之第二實施例之基板:。 …第、⑲直剖面圖。依照第二實施例基板洗淨裝相^之 Γ貫施例之基板洗淨裝置的部分者係以相同的元t 表示1且不會於下文中予以說明。依照第^牛付號 板洗淨裝置之詳細操 作係相同:第施例之基 置者,以下料作說明。 狀基板洗淨骏 依照第二實施例,基板固持機構1包 — 11、支撐該工作台U之中空支料12、和 工作台 台11之上表面之複數個夾爪1〇。旋轉蓋3固:於::作 之周圍。旋轉蓋3和基板w之間之相關位置係隨時固作定台 32〇6(5〇 13 200922701 在工作么丨彳 直移動這錄桿4〇^^^^捍4()和用來垂 孔m,其係位於 ^* 2具有複數個通 於工作a η 分似推卸40之位置之位置。配置 示),其°亦位㈣嫩㈣孔11(未顯 11沒有辅助排放孔。^ a之位置之位置。工作台 以與第一貫施例相同的操作順序乾燥基板界 基Μ後,制動器23舉升推桿40,如第1〇圖中所示1 推杯40係向上移動穿過通孔11&以舉升基板界。其後,= 由移載機器人之手(圖中未顯示)將該乾燥之基板W移每。曰 第11圖為依照第二實施例之基板洗淨裝置之旋轉絮 之變形例之放大剖面圖。如第u圖中所示,旋轉蓋心3 固定於旋轉蓋3之内周表面之輔助旋轉蓋犯結合= 3和輔助旋轉蓋42彼此共同旋轉。輔助旋轉蓋^具=盍 向朝内朝向其上端傾斜之_表面。該輔助旋轉蓋42'^ 端係位於與該基板w實質上相同的高度。旋轉蓋上 和輔助旋轉蓋42之上端且有奋質上細 上啕 朴 鳊”有只貝上相同的直徑。補助 盍2之上端具有複數個凹部(圖中未顯示),該等凹 於第2圖中所示之凹部%之形狀。輔助旋轉蓋42 數個界定於其下端之排放孔44。 /、有啜 在基板W之前表面上方之空間和在基板w之後表 方之空間賴由辅助旋轉蓋42而彼此分離。因此,乾=下 板W之前表面之製程和乾燥基板w之後表面之製^基 會彼此影響。詳言之,輔助旋轉蓋42係防止液體之霧氣: 14 32〇66〇 200922701 基板w之前表面上方空間與基板w之後表面下方空間之間 流動。此外,能夠改變對於基板W之前表面之乾燥製程和 對於基板W之後表面之乾燥製程之順序。詳言之,能夠首 先乾燥基板W之後表面然後乾燥基板W之前表面。乾燥製 程之具體細節與第一實施例者相同。 第12圖為依照本發明之第三實施例之基板洗淨裝置 之示意垂直剖面圖。依照第三實施例之基板洗淨裝置之相 同於依照第一實施例之基板洗淨裝置之部件者係以相同的 元件符號表示,而於下文中將不再作詳細的說明。依照第 三實施例中基板洗淨裝置之操作細節係與依照第一實施例 之基板洗淨裝置之操作細節相同,於下文中將不再作詳細 說明。 依照第三實施例之基板洗淨裝置其不同於依照第一實 施例之基板洗淨裝置之處在於固定蓋45係設在旋轉蓋3之 周圍。此固定蓋45不可旋轉,並成形為用以覆蓋旋轉蓋3 之整個外周表面。於旋轉蓋3之外周表面和固定蓋45之内 周表面之間形成有一小間隙。固定蓋45具有排出口 46。 固定蓋45具有上端,其直徑實質上相同或稍微大於旋轉蓋 3之上端之直徑。固定蓋45具有下端,其係定位於裙28 之下端下方。因此,固定蓋45係成形為覆蓋旋轉蓋3和裙 28之整個外周表面。 設置固定蓋45之理由如下。當旋轉蓋3連同基板W旋 轉時,旋轉蓋3可能擾亂其外周表面附近之氣體,而產生 稍微旋轉之氣流。此旋轉氣流可能會載送液體之霧氣回到 15 320660 200922701 基板w之表面。旋轉氣流亦可能載送液體至清洗室(亦即, 清洗空間)之壁上,並可能載送清洗室内之大氣至基板w之 表面。固定蓋45能夠防止產生此種旋轉氣流,並因此防止 於基板W上產生水痕和於基板W之背面產生污染。 固定蓋45和旋轉蓋3之間之間隙最好盡可能地小,以 便防止在間隙中之氣體被旋轉的旋轉蓋3擾亂並朝向基板 W流回。排出口 46較佳係耦接至一吸引源(未顯示),用以 在乾燥基板W時從固定蓋45和旋轉蓋3之間的間隙強制抽 出氣體。當操作吸引源時,係於旋轉蓋3和固定蓋45之間 的小間隙中產生氣流,如第13圖中所示。結果,一度流入 到間隙中之氣體於旋轉蓋3旋轉期間不會朝向基板W流回。 第14圖為依照本發明之第三實施例之基板洗淨裝置 之變形例之示意垂直剖面圖。如第14圖中所示,複數個鰭 片50固定於旋轉蓋3·之外周表面。鰭片50能夠防止已流 入到固定蓋45和旋轉蓋3之間的間隙的氣體由於旋轉蓋3 之旋轉而回流。旋轉蓋3之外周表面可以具有螺旋溝槽, 而非鰭片50,用來引致間隙中的氣體由於旋轉蓋3之旋轉 而向下流動。 依照第三實施例之固定蓋45可以應用於依照第一和 第二實施例之基板洗淨裝置。 第15圖為依照本發明之第四實施例之基板洗淨裝置 之示意垂直剖面圖。依照第四實施例之基板洗淨裝置之相 同於依照第一實施例之基板洗淨裝置部分者,係標以相同 的元件符號,且於下文中不再作詳細之說明。於下文中不 36 320660 200922701 再說明之依照第四實施例之基板洗淨裝置之操作細節,係 相同於依照第一實施例之基板洗淨裝置者。 如第15圖中所示,液體吸收器53固定於旋轉蓋3之 内周表面。液體吸收器53大體上覆蓋旋轉蓋3之整個内周 表面。液體吸收器53可以由PVA(聚乙烯乙醇)之海棉、多 孔材料、或師孔布製成。為了容易從基板W補獲液體’液 體吸收器53較佳應為親水性者。液體吸收器53較佳亦應 在其中具有連續的細孔,以便引導所捕獲的液體向下流經 液體吸收器53至排放孔25。 於具有上述結構之第四實施例中,液體吸收器53亦能 夠吸收液體衝撞在旋轉蓋3上之衝擊。液體吸收器53亦可 應用於依照第一至第三實施例之基板洗淨裝置。 第16圖為依照本發明第五實施例之基板洗淨裝置之 示意垂直剖面圖。依照第五實施例之基板洗淨裝置之相同 於依照第三實施例之基板洗淨裝置之部件者係以相同的元 件符號表示,且於下文中將不再作詳細的說明。於下文中 將不再作詳細說明之依照第五實施例中基板洗淨裝置之操 作細節係與依照第一實施例之基板洗淨裝置之操作細節相 同。 如第16圖中所示,清洗室51配置在固定蓋45之周 圍,而排出口 47設在清洗室51之下部。排出口 47和固定 蓋45之排出口 46耦接至一吸引源(未顯示)。依照此實施 例,未顯示之吸引源和耦接至氣體出口通道31之吸引源 32之操作係於清洗室51中整體地形成向下流動之氣體。 17 320660 200922701 尤其是,當於清洗室51中 流動之氣顧防止存在 卜周表面㈣。此向下 。之内表面之間之水滴和周;=r卜周表面與清洗室 並亦防止在清洗室5i中本再-人附者於基板说上, 第17 Μ 務乳再附著於基板π上。 意垂直剖面圖照本發明之參考例之基板洗淨裝置之示 含:基板固持機構 係組構成經由該基板固持機獅, 心轴旋轉;固定蓋70,設在談 土板研以其自己的中 4,用來供應純水做為清洗液前:嘴 _、和安裝在工作r6?之3該工作台61之中空支撐 支撐軸62在其;面上的複數個夾爪1〇。 洗液供應源;和氣體」贺嘴17’其係搞接至清 清洗液供細供· =3?氣於其中作為乾燥氣體,、並且經= 體喷_ 18供應麵氣體至該基板w之後表面。田乳 前喷嘴4指向基板W之中央。前喷嘴4輕接 顯示之純水供應源(亦即 B中未 供應源供應純水至基板w之;^^之應亚且從該純水 哥尼乾焊法之中央。用來執行諾塔 哥尼μ技—個平行対2(Μσ 21係配 320660 18 200922701 上。喷嘴20係用來供應IPA蒸汽(異丙醇和氮氣體之混合 物)至基板W之前表面上。喷嘴21係用來供應純水至基板 W之前表面上,以便防止基板W之前表面變乾。喷嘴20和 21可移動於基板W之徑向方向。 固定蓋70具有徑向向内傾斜之内周表面。固定蓋70 之上端係定位於基板W上方。液體吸收器53固定於固定蓋 70之内周表面。液體吸收器53大體上覆蓋固定蓋70之整 個内周表面。液體吸收器53可以由PVA(聚乙烯乙醇)之海 棉、多孔材料、或篩孔布製成。為了容易從基板W補獲液 體,液體吸收器53較佳應為親水性者。液體吸收器53較 佳亦應在其中具有連續的細孔,以便引導所捕獲的液體向 下流經液體吸收器53。 用來回收液體(例如,來自前喷嘴4和後喷嘴17之被 供應做為清洗液之純水、和供應自喷嘴21·之純水)之液體 儲槽63係配置於工作台61和固定蓋70之下方。液體儲槽 63於其底部具有出水口 64。出水口 64耦接到一吸引源(未 顯示),而使得由液體儲槽63所回收之液體連同環境氣體 經由出水口 64而被排放。 於此實例中之基板洗淨裝置可操作成依照與第一實施 例相同的處理程序而執行於基板W上之乾燥製程。詳言 之,供給馬達2能量以旋轉基板W。然後,前喷嘴4和後 喷嘴17分別供應純水至基板W之前表面和後表面,以便用 純水沖洗基板W之整體。從旋轉中之基板W去除純水,經 去除之純水由固定蓋70所捕獲,並由該液體儲槽63所回 19 320660 200922701 -個噴嘴20、21係位在遠離基 收。當如此沖洗基板w時, 板w之給定的待命位置。 然後,停止供應純水,並將前噴嘴4移至遠離基板w 之給定待命位置。此二個喷嘴2G、21被移至基板讯上方之 ί基板W以15G至_轉7分鐘之低速範圍旋轉 二: 蒸;:嘴嘴21供應純水至綱之 表面。二個喷嘴2〇和f噴嘴17供應純水至基板W之後 藉此乾燥基板W之前I导皮同時移動於基板界之徑向方向, 甘々 j表面(上表面)。 具後,將二個噴嘴 後噴嘴Π供應純水。㈣、21移至其待命位置,並停止從 鐘之高速範圍旋轉,而1後 1基板讯以1000至150〇轉/分 操作期間,氣體噴嘴=基板W之後表面去除純水。於此 以此種方式,乾紅基板w之後表面。 體衝撞在之此例中’液體吸收器53能夠吸收液 ★疋和風3上之衝擊。 弟18圖為依昭士 之示意垂直剖面1;^明之另—參考例之基板洗淨裂置 之基板洗淨裝置之中將不再說明之第18圖中所示 基板洗淨裝置之^^操作細節係與第17圖中所示之 明。 '、、°構和操作細節相同,而將不再作重複說 如第18圖中所+ w 蓋65,該屏蔽蓋心 洗淨裝置包含中空圓筒狀屏蔽 蔽篕65具有:上沪形為圍繞工作台61和支撐軸62。屏 而係位於與工作台61實質相同的高度; 320660 20 200922701 和下端,係固定於液體儲槽63。於此例中,未提供上述液 體吸收器53。因為工作台61和支撐軸62用屏蔽蓋65覆 蓋,因此當工作台61和支撐軸62旋轉時可防止形成環境 氣體之旋轉流動。結果’亦防止液體之霧氣再附著在基板 W之表面,否則該霧氣將由此種環境氣體之旋轉流動所載 送0 依照第一實施例之旋轉蓋3可以附加至顯示於第17和 18圖中之基板洗淨裝置。 第19和20圖為依照本發明之又另一參考例之基板洗 淨裝置之示意垂直剖面圖。於下文中將不再說明之第19和 20圖中所示之基板洗淨裝置之結構和操作細節,係與第17 圖中所示之基板洗淨裝置之結構和操作細節相同,而將不 再作重複說明。 於此例中,固定蓋70係可垂直移動。如上所述,當乾 燥基板W之前表面和當乾燥基板W之後表面時,該基板W 係以不同的速度旋轉。因此,較理想之情況是依據將乾燥 基板W之哪一面而改變固定蓋70之位置。詳言之,當乾燥 基板W之前表面時,固定蓋70是在正常位置,如第19圖 中所示。如上所述,當乾燥基板W之前表面時該基板W係 以低速旋轉。因此,從旋轉之基板W去除之水滴係自由落 下然後衝撞於固定蓋70之内周表面上。因為固定蓋70和 基板W之周邊之間的距離大,因此衝撞於固定蓋70之内周 表面上之水滴幾乎不會彈回到基板W。 當乾燥基板W之後表面時,基板W係以高速旋轉。因 21 320660 200922701 此,從旋轉之基板w去除之水滴實質上以直線方式行進並 以高速衝撞於固定蓋70之内周表面上,如第20圖中所示。 此外,當夾爪10和工作台61以高速旋轉時,環繞在基板 W周圍之氣體被攪亂,而形成旋轉氣流。此旋轉氣流係不 希望的,因為旋轉氣流可能載送水滴和霧氣至基板W之表 面。依照此例,係在固定蓋70在較低位置之情形下乾燥基 板W之後表面。詳言之,固定蓋70降低至該固定蓋70之 上端係與基板W實質上相同高度之位置。於此位置,基板 W之周圍與固定蓋70之間之距離小。因此,防止水滴和霧 氣從基板W之後表面流至前表面。 第21圖為依照本發明第六實施例之基板洗淨裝置之 示意垂直剖面圖。依照第六實施例基板洗淨裝置之相同於 依照第一實施例之基板洗淨裝置之該等部分者,係以相同 的元件符號表示,且下文中將不作詳細說明。依照第六實 施例之基板洗淨裝置之操作細節相同於依照第一實施例之 基板洗淨裝置者,以下將不作說明。 如第21圖中所示,内部旋轉蓋75係設置於旋轉蓋3 之徑向内侧。此内部旋轉蓋75固定於工作台11之第二工 作台11B。旋轉蓋(第一旋轉蓋)3和内部旋轉蓋(第二旋轉 蓋)75藉由複數個支撐臂80而彼此耦接。因此,内部旋轉 蓋75和旋轉蓋3係可旋轉地結合在一起。間隙形成於内部 旋轉蓋75和旋轉蓋3之間。 第22A圖為内部旋轉蓋75和旋轉蓋3之放大垂直剖面 圖,而第22B圖為内部旋轉蓋75和夾爪10之平面圖。内 22 320660 200922701 =走轉蓋75具有具平滑拱形垂直剖面之外周表面。内 轉盘75之外周表面相對於水平面之角度係從㈣ p之上端之最小值漸漸增加至下端之最大值。詳言之,槪 =轉蓋75之外周表面相對於水平面之角度係㈣上= 、'、勺為0度、而於其下端約為9〇度。 、^ 内部旋轉蓋75之上端係稍衫位於藉由夾爪μ 、之基板w之下方。換言之,内部旋轉蓋75之外周表面 Γ上蠕係定位於基板W之上表面之下方,而内部旋轉蓋75 2 =周表面之上端係定位於基板w之下表面之上方:内部二 轉羞75之上端位於接近基板W之周圍。内部旋轉蓋75疋 ^之直控稍微大於基板W之直徑。内部旋轉蓋75 表面較佳為亦具有平滑拱形剖面,如同其外周表面。二 圖中所示’内部旋轉蓋75之上端具有複數個凹部= 凹部75a具有對應於夾爪1〇的形狀之形狀。 内部旋轉蓋75之外周表面包括從基板?之周 的平滑拋物線。因此,當基板W旋轉時,於美^ =在液體之表面張力下平穩地沿著内二 ==向下方向被引導。因此,流動之液體 ,為水滴或霧氣。因為内部旋轉蓋75 曰& 基板W之卜#^ 表面之上端輕 與内部㈣,為低些,因此液體較陷於基板, 内。以疋轉蓋75之間之間隙中。若内 坂 表面之上端ti 疋锝盍75之外周 於基板二基板^上端高,則來自基板W之液體流脅 /、内部旋轉蓋75之間破碎而轉變成+ # 因此,内部㈣m L L 水滴或霧氣。 疋轉盍75之外周表面之上端係位於與基板 320660 23 200922701 下方- 一 顸微 旋轉蓋3之内周表面與内部 實質上相同的形狀。詳言之,旋 5之外周表面具有 形垂直剖面。旋轉蓋 内周表面具有平 上表面相同的高度,或較佳為位於基板 下方。 表面之稍微 旋轉蓋3之内周| ^ . 砰吕之,旋轉蓋3 叫昇肩 滑拱形垂直剖面。旋轉蓋3 ^ 内周表面具有斗 度係從旋轉蓋3之上端之最小值漸水平面之角 值。詳言之,旋轉蓋3之内周表面相對^至下端之最J ,於其上端約為0度、而於其下端 :面之角度名 '示,但是旋轉蓋3之上端亦具有形 度。雖然圖中未羁 之形狀的複數個凹部。 以於内部旋轉蓋7 支=別固定於内部旋轉 3之内周表面。詳言之,支撐臂8〇 =表面和旋轉蓋 之外周表面與旋轉蓋3之 :内部旋轉蓋75 為固定於内部旋轉蓋之支撐臂8〇=_中。第2u圖 圖,而第咖圖為切臂抑之從=上方觀看時之平面 於第似和咖圖令 /匈觀看時之圖示。 支㈣SO具有葉月之开^便=兄明而未顯示旋轉蓋3。各 蓋3旋轉時,支樓臂仙會於轉蓋75和旋轉 之間隙中產生向下流 ^ σ疋轉蓋75與旋轉蓋3間 内部旋轉蓋75和_ : 至基板界之上表面之液^ 3連同基板起旋轉。供應 W移至内部旋轉蓋?5心列如’純水)藉由離心力從基板 下流。於凝轉期間,其功:著旋轉蓋75之外周表面向 轉蓋75與熒轉莫3 葉片之支樓臂80係於内部旋 -之間間隙中形成向下氣體流。因此,液 320660 24 200922701 -霧氣和水滴藉由向下氣體流而被強制向下移動,而被 防止,著於基板W之表面。可適當地調整内部旋轉蓋75與 方疋轉盍3之間之間隙,以便使得液體可平順地向下流動並 防止霧氣進入基板w上方空間。 ㈣旋轉蓋75和旋轉蓋3之表面最好是親水性表面, 釋水滴附著於内部旋轉蓋75和旋轉蓋3時不會輕易 旋m #父理想情況是,内部旋轉蓋75外周表面和/或 r部^-之内周表面具有螺旋狀凹槽,用來朝向引導於内 。疋轉盍75上和旋轉蓋3上之液體。 卩㈣蓋75、旋轉蓋3、和基板w位於清洗室。 SC:其底部具有氣體出口…和液體出口训。供 放,:一士 〃之譬如純水之液體係經由液體出口 51b被排 體出口 L麵轉的支標臂8〇形成向下氣流之氣體係經由氣 氣a被排放m可祕至氣體出σ 51a而使得 乳體破_從清洗室51排放。 ^ 置之ί二:明第六實施例之基板洗淨裝 定蓋85。如第24:中圖。於此變形例中,係加上固 轉蓋3。固定蓋δ5在’此固定蓋85係設置成圍繞旋 端下方的π山 為不可旋轉,並具有位於旋轉蓋3之下 整個外周表=。°如此,,蓋85係成形為覆蓋旋轉蓋3之 表面之間係形成外周表面和固定蓋85之内周 85之上端係且 % ^然圖中未顯示,但是固定蓋 的形狀之形狀=?85凹^其各具有對應於各夹幻〇 ·- 85之上端之直徑實質上與旋轉蓋3 320660 25 200922701 之上端之直徑相同或稍微大些。設置固定蓋85之理由與設 置上述之固定蓋45之理由相同。 接著,現將說明具有依照本發明之上述實施例之基板 洗淨裝置之拋光裝置之例子。第25圖為具備有依照本發明 之第一至第六實施例中之任何其中一者之基板洗淨裝置的 拋光裝置之平面圖。第26圖為第25圖中所示拋光裝置之 示意透視圖。如第25圖中所示,拋光裝置具有矩形之外殼 100。外殼100之内部空間藉由分隔壁101a、101b、101c ' 而被分隔成裝載及卸載部102、拋光部130( 130a、130b)、 和清洗部140。 裝載及卸載部102具有二個或多個前裝載單元120(於 第25圖中有3個),在此前裝載單元120上放置有各儲存 許多基板之匣盒(cassette)。前裝載單元120被配置成沿 著拋光裝置之寬度方向(垂直於拋光裝置之縱向之方向)彼 此鄰接。各前裝載單元120能夠在其上承接開放式匣盒、 i :標準製造介面容器(Standard Manufacturing Interface Pod ; SMIF pod)、或前開口聯合容器(Front Opening Unif ied ; FOUP pod)。SMIF 和 FOUP 為緊密密封之容 器’其在其中容置有晶圓匣盒,並用分隔壁覆蓋之,以提 供與外部空間隔離之内部環境。 再者’裝載及卸載部102具有移動機構ι21,其係沿 著鈾農載單元120之配置方向延伸。第一移載機器人I” 安置於移動機構121上,並可沿著前裝載單元12〇之配置 方向移動。此第-移載機器人122可操作成在移動機構121 320660 26 200922701 ^私動以便存取安裝於前裝載單元120上之晶圓匣盒。 第一移载機器人122具有垂直配置而可獨立使用之二個 手。例如’上方的手可用來將經拋光之基板送回至晶圓匿 盒’而下方的手可用來移載未拋光之基板。 褒载及卸载部102係被要求為最清潔之區域。因此, 裝載及卸載部1 02之内部壓力係隨時被保持成較裝置之外 部空間、抛光部130和清洗部140之壓力為高。再者,具 ,有清潔空氣濾清器(譬如HEPA濾清器或ULPA濾清器)之濾 清器風扇單元(圖式中未顯示)係設於第一移載機器人12 2 之移動機構121之上方。此濾清器風扇單元係從空氣去除 微粒、有毒蒸汽、和有毒氣體以產生清潔的空氣,並恆常 地形成向下流動之清潔的空氣。 拋光部130為拋光基板之區域。此拋光部130包含第 一拋光部130a和第二拋光部130b,在該第一拋光部i30a 中具有第一拋光單元131A和第二拋光單元131B,在該第 ( 二抱光部130b中具有第三拋光單元131C和第四拋光單元 131D。如第25圖中所示’第一搬光單元131A、第二撤光 單元131B、第三拋光單元131C、和第四拋光單元131D係 沿著拋光裝置之縱向配置。 第一据光單元131A包含:拋光台132A,係固持住拋 光墊;頂環133A,係配置成固持基板並按壓該基板頂靠於 拋光台132A上之拋光墊之拋光表面,以便拋光該基板;拋 光液供應喷嘴134A ’用來供應拋光液(例如,漿料)或修整 液(例如,純水)至拋光墊之抛光表面;修整器(dresser) 27 320660 200922701 135A,用來修整拋光墊;以及喷霧器(at〇mizer)136A,具 有喷鳴/用來將霧化狀態之液體(例如,純水)和氣體(例 如,氮氣)之混合物喷射至拋光表面。 同樣地,第二拋光單元131B包含拋光台132β、頂環 133B、拋光液供應噴嘴134B、修整器135β、和喷霧器ΐ36β。 第三拋光單元131C包含拋光台132c、頂環133C、拖光液 供應喷嘴134C、修整器135C、和噴霧器136C。第四拋光 單元131D包含抛光台132D、頂環_、抛光液供應喷嘴 134D、修整器135D、和喷霧器136D。 第-線性搬運15〇設於第一撤光部13〇a中。此第一 線性搬運H 15G係配置成心於位於沿著㈣裝置之縱向 之四個移载位置之間移載基板(下文中,此四個移載位置從 裝載及卸_ 1G2依序稱為第—移载 位置TP2、第二蒋哉仏里示 —载置ΤΡ3、和第四移載位置Τρ4)。用The brake 23 raises the substrate w up to the top of the substrate W L 3 . The substrate w of the domain is removed from the substrate holding mechanism by the hand of the transfer robot (not shown). Substrate = ^ ' when the front surface of the substrate W and when dry, when the substrate Sw ’ The system is positioned at different heights. For example, the normal substrate level shown in Fig. 1 is the w-plane shown in Fig. 1. Although the surface of the substrate w is dried, the substrate w is raised to the upper end of the rotary cover 3. Detailing the board W to lift until the rotation 3 is to position the base front and rear surface ends on the substrate? In this position, the distance between the substrate w and the rotary cover 3 = in the figure. Therefore, it is possible to prevent water droplets and mist from flowing from the surface after the substrate W to the front = small. Figure 9 is a substrate according to a second embodiment of the present invention: ...the 19th straight section. The portion of the substrate cleaning apparatus according to the second embodiment of the substrate cleaning apparatus according to the second embodiment is denoted by the same element t and will not be described below. The detailed operation of the apparatus according to the second section of the horn is the same: the base of the first embodiment is described below. The substrate holding mechanism 1 according to the second embodiment, the substrate holding mechanism 1 includes 11, a hollow support 12 for supporting the table U, and a plurality of jaws 1 on the upper surface of the table 11. Rotating cover 3 is solid: around::. The relative position between the rotating cover 3 and the substrate w is fixed at any time to set the stage 32〇6 (5〇13 200922701 in the work, move the rod 4〇^^^^捍4() and use it for the vertical hole m, which is located at ^* 2 and has a plurality of positions at the position where the work a η is similar to the push and unload 40. The configuration is shown as follows, and the position is also (4) the tender (four) hole 11 (the display 11 does not have an auxiliary discharge hole. ^ a The position of the position. After the table is dried in the same operation sequence as the first embodiment, the brake 23 lifts the push rod 40, as shown in the first figure, the push cup 40 moves upward through the pass. The hole 11& is used to lift the substrate boundary. Thereafter, the dried substrate W is moved by the hand of the transfer robot (not shown). FIG. 11 is a substrate cleaning device according to the second embodiment. An enlarged sectional view of a modified example of the rotary skein. As shown in Fig. u, the rotary cover 3 is fixed to the inner peripheral surface of the rotary cover 3, and the auxiliary rotary cover constituting the combination = 3 and the auxiliary rotary cover 42 rotates with each other. The cover member has a surface that is inclined toward the inner end toward the upper end thereof. The auxiliary rotary cover 42' end is located substantially the same as the substrate w Height. The upper end of the rotating cover and the auxiliary rotating cover 42 and the upper surface of the auxiliary rotating cover 42 have the same diameter on the shell. The upper end of the auxiliary 盍 2 has a plurality of recesses (not shown), the concave The shape of the recess % shown in Fig. 2. The auxiliary rotary cover 42 has a plurality of discharge holes 44 defined at the lower end thereof. /, the space above the surface before the substrate W and the space behind the substrate w It is separated from each other by the auxiliary rotating cover 42. Therefore, the process of the surface before the dry = lower plate W and the substrate of the surface after the drying of the substrate w affect each other. In detail, the auxiliary rotating cover 42 prevents the mist of the liquid: 14 32 〇66〇200922701 The space above the surface before the substrate w and the space below the surface after the substrate w. Further, the order of the drying process for the surface before the substrate W and the drying process for the surface after the substrate W can be changed. In detail, The surface of the substrate W is first dried and then the surface before the substrate W is dried. The specific details of the drying process are the same as those of the first embodiment. Fig. 12 is a substrate cleaning according to a third embodiment of the present invention. A schematic vertical cross-sectional view of the device. The components of the substrate cleaning device according to the third embodiment are the same as those of the substrate cleaning device according to the first embodiment, and will not be described in detail hereinafter. The operation details of the substrate cleaning apparatus according to the third embodiment are the same as those of the substrate cleaning apparatus according to the first embodiment, and will not be described in detail hereinafter. The substrate according to the third embodiment. The cleaning device is different from the substrate cleaning device according to the first embodiment in that a fixing cover 45 is provided around the rotary cover 3. The fixed cover 45 is non-rotatable and shaped to cover the entire periphery of the rotary cover 3. A small gap is formed between the outer peripheral surface of the rotary cover 3 and the inner peripheral surface of the fixed cover 45. The fixed cover 45 has a discharge port 46. The fixing cover 45 has an upper end whose diameter is substantially the same or slightly larger than the diameter of the upper end of the rotary cover 3. The fixed cover 45 has a lower end that is positioned below the lower end of the skirt 28. Therefore, the fixing cover 45 is shaped to cover the entire outer peripheral surface of the rotary cover 3 and the skirt 28. The reason why the fixing cover 45 is provided is as follows. When the rotary cover 3 is rotated together with the substrate W, the rotary cover 3 may disturb the gas in the vicinity of its outer peripheral surface to generate a slightly rotating air flow. This swirling airflow may carry the liquid mist back to the surface of the 15 320660 200922701 substrate w. The swirling gas stream may also carry liquid to the wall of the cleaning chamber (i.e., the cleaning space) and may carry the atmosphere in the cleaning chamber to the surface of the substrate w. The fixing cover 45 can prevent such a swirling airflow, and thus prevent water marks on the substrate W and contamination on the back surface of the substrate W. The gap between the fixed cover 45 and the rotary cover 3 is preferably as small as possible to prevent the gas in the gap from being disturbed by the rotating rotary cover 3 and flowing back toward the substrate W. The discharge port 46 is preferably coupled to a suction source (not shown) for forcibly extracting gas from the gap between the fixed cover 45 and the rotary cover 3 when the substrate W is dried. When the suction source is operated, an air flow is generated in a small gap between the rotary cover 3 and the fixed cover 45 as shown in Fig. 13. As a result, the gas that once flowed into the gap does not flow back toward the substrate W during the rotation of the rotary cover 3. Fig. 14 is a schematic vertical sectional view showing a modification of the substrate cleaning apparatus according to the third embodiment of the present invention. As shown in Fig. 14, a plurality of fins 50 are fixed to the outer peripheral surface of the rotary cover 3. The fin 50 can prevent the gas that has flowed into the gap between the fixed cover 45 and the rotary cover 3 from flowing back due to the rotation of the rotary cover 3. The outer peripheral surface of the rotary cover 3 may have a spiral groove instead of the fin 50 for causing the gas in the gap to flow downward due to the rotation of the rotary cover 3. The fixing cover 45 according to the third embodiment can be applied to the substrate cleaning apparatus according to the first and second embodiments. Fig. 15 is a schematic vertical sectional view showing a substrate cleaning apparatus in accordance with a fourth embodiment of the present invention. The substrate cleaning apparatus according to the fourth embodiment is the same as that of the substrate cleaning apparatus according to the first embodiment, and is denoted by the same reference numerals and will not be described in detail below. The details of the operation of the substrate cleaning apparatus according to the fourth embodiment, which is hereinafter described, are the same as those of the substrate cleaning apparatus according to the first embodiment. As shown in Fig. 15, the liquid absorber 53 is fixed to the inner peripheral surface of the rotary cover 3. The liquid absorber 53 substantially covers the entire inner peripheral surface of the rotary cover 3. The liquid absorber 53 may be made of PVA (polyethylene ethanol) sponge, porous material, or a master cloth. In order to easily replenish the liquid from the substrate W, the liquid absorber 53 is preferably hydrophilic. Preferably, the liquid absorber 53 should also have continuous pores therein to direct the trapped liquid downwardly through the liquid absorber 53 to the discharge orifice 25. In the fourth embodiment having the above structure, the liquid absorber 53 can also absorb the impact of the liquid colliding on the rotary cover 3. The liquid absorber 53 can also be applied to the substrate cleaning apparatus according to the first to third embodiments. Fig. 16 is a schematic vertical sectional view showing a substrate cleaning apparatus in accordance with a fifth embodiment of the present invention. The components of the substrate cleaning apparatus according to the fifth embodiment which are the same as those of the substrate cleaning apparatus according to the third embodiment are denoted by the same reference numerals and will not be described in detail hereinafter. The details of the operation of the substrate cleaning apparatus according to the fifth embodiment, which will not be described in detail hereinafter, are the same as those of the substrate cleaning apparatus according to the first embodiment. As shown in Fig. 16, the cleaning chamber 51 is disposed around the fixed cover 45, and the discharge port 47 is provided at the lower portion of the cleaning chamber 51. The discharge port 47 and the discharge port 46 of the fixed cover 45 are coupled to a suction source (not shown). According to this embodiment, the operation of the suction source not shown and the suction source 32 coupled to the gas outlet passage 31 integrally forms a downward flowing gas in the cleaning chamber 51. 17 320660 200922701 In particular, when the flow in the cleaning chamber 51 is prevented, there is a surface (4). This is down. The water droplets and the circumference between the inner surfaces; the surface of the circumference and the cleaning chamber are also prevented from being attached to the substrate π in the cleaning chamber 5i. The present invention relates to a substrate cleaning apparatus according to a reference example of the present invention. The substrate holding mechanism is configured to hold a machine lion through the substrate, and the mandrel is rotated; the fixed cover 70 is disposed on the earthen plate and its own Medium 4, for supplying pure water as a cleaning liquid: mouth _, and a plurality of jaws 1 on the surface of the hollow support support shaft 62 of the table 61 mounted on the work r6? The washing liquid supply source; and the gas "Hezui 17" is connected to the cleaning liquid for fine supply · = 3 gas in it as a dry gas, and after the body spray _ 18 supply surface gas to the substrate w surface. The field front nozzle 4 is directed to the center of the substrate W. The front nozzle 4 is lightly connected to the pure water supply source (that is, the supply of pure water to the substrate w is not supplied from the source B; and the center of the pure water is used to perform the Nota. Coney's technology - a parallel 対 2 (Μσ 21 is equipped with 320660 18 200922701. Nozzle 20 is used to supply IPA steam (mixture of isopropanol and nitrogen gas) to the surface before the substrate W. Nozzle 21 is used to supply pure Water is applied to the front surface of the substrate W to prevent the front surface of the substrate W from drying out. The nozzles 20 and 21 are movable in the radial direction of the substrate W. The fixed cover 70 has an inner peripheral surface that is inclined radially inward. The liquid absorber 53 is fixed to the inner peripheral surface of the fixed cover 70. The liquid absorber 53 substantially covers the entire inner peripheral surface of the fixed cover 70. The liquid absorber 53 may be made of PVA (polyethylene glycol). Made of sponge, porous material, or mesh cloth. In order to easily replenish liquid from the substrate W, the liquid absorber 53 should preferably be hydrophilic. The liquid absorber 53 should preferably have continuous pores therein so that Guide the captured liquid down through the liquid Absorber 53. A liquid reservoir 63 for recovering liquid (for example, pure water supplied from the front nozzle 4 and the rear nozzle 17 as a cleaning liquid, and pure water supplied from the nozzle 21) is disposed on the table 61 and below the fixed cover 70. The liquid reservoir 63 has a water outlet 64 at its bottom. The water outlet 64 is coupled to a suction source (not shown) such that the liquid recovered by the liquid reservoir 63 is passed along with the ambient gas. The substrate cleaning device in this example is operable to perform a drying process on the substrate W in accordance with the same processing procedure as the first embodiment. In detail, the motor 2 is supplied with energy to rotate the substrate W. Then, the front nozzle 4 and the rear nozzle 17 respectively supply pure water to the front surface and the rear surface of the substrate W to wash the entirety of the substrate W with pure water. Pure water is removed from the rotating substrate W, and the purified pure water is fixed by The cover 70 is captured and returned by the liquid reservoir 63 19 320660 200922701 - a nozzle 20, 21 is positioned away from the base. When the substrate w is thus flushed, the given position of the plate w is set. Then, the supply is stopped. Pure water, and The front nozzle 4 is moved to a given standby position away from the substrate w. The two nozzles 2G, 21 are moved to the substrate W above the substrate to rotate at a low speed range of 15 G to _ 7 minutes: steaming; Supply pure water to the surface of the surface. Two nozzles 2〇 and f nozzles 17 supply pure water to the substrate W, thereby drying the substrate W before the I guide skin simultaneously moves in the radial direction of the substrate boundary, the surface of the 々 j j (upper surface) After the device, the nozzles of the two nozzles are supplied with pure water. (4), 21 is moved to its standby position, and the rotation from the high-speed range of the clock is stopped, and the operation of the substrate after 1 and 1 is performed at 1000 to 150 rpm. The gas nozzle = the surface of the substrate W after the pure water is removed. In this manner, the surface of the red substrate w is dried. In this case, the liquid absorber 53 can absorb the impact of the liquid ★ 疋 and wind 3 . The image of the younger brother 18 is the schematic vertical section of the Zhaoshishi; the other is the substrate cleaning device shown in Fig. 18 which will not be described in the substrate cleaning device of the reference example. The details of the operation are as shown in Fig. 17. ',, structure and operation details are the same, and will not be repeated as shown in Fig. 18, the w cover 65, the shield core cleaning device comprises a hollow cylindrical shielding cover 65 having the shape of the upper Shanghai Around the table 61 and the support shaft 62. The screen is located at substantially the same height as the table 61; 320660 20 200922701 and the lower end are fixed to the liquid reservoir 63. In this case, the above liquid absorber 53 is not provided. Since the table 61 and the support shaft 62 are covered by the shield cover 65, the rotational flow of the ambient gas can be prevented from being formed when the table 61 and the support shaft 62 rotate. The result 'also prevents the mist of the liquid from reattaching to the surface of the substrate W, otherwise the mist will be carried by the rotational flow of such ambient gas. The rotating cover 3 according to the first embodiment can be attached to the figures shown in Figures 17 and 18. The substrate cleaning device. 19 and 20 are schematic vertical sectional views of a substrate cleaning apparatus according to still another reference example of the present invention. The structural and operational details of the substrate cleaning apparatus shown in Figures 19 and 20, which will not be described hereinafter, are the same as those of the substrate cleaning apparatus shown in Fig. 17, but will not Repeat the explanation. In this example, the fixed cover 70 is vertically movable. As described above, when the surface of the substrate W is dried and when the surface of the substrate W is dried, the substrate W is rotated at different speeds. Therefore, it is preferable to change the position of the fixing cover 70 depending on which side of the substrate W is to be dried. In detail, when the front surface of the substrate W is dried, the fixing cover 70 is in the normal position as shown in Fig. 19. As described above, the substrate W is rotated at a low speed when the front surface of the substrate W is dried. Therefore, the water droplets removed from the rotating substrate W are free to fall and then collide with the inner peripheral surface of the fixed cover 70. Since the distance between the fixing cover 70 and the periphery of the substrate W is large, water droplets that collide with the inner circumferential surface of the fixing cover 70 hardly bounce back to the substrate W. When the surface behind the substrate W is dried, the substrate W is rotated at a high speed. Since 21 320660 200922701, the water droplets removed from the rotating substrate w travel substantially in a straight line and collide with the inner peripheral surface of the fixed cover 70 at a high speed as shown in Fig. 20. Further, when the jaw 10 and the table 61 are rotated at a high speed, the gas surrounding the substrate W is disturbed to form a swirling air current. This swirling airflow is undesirable because the swirling airflow may carry water droplets and mist to the surface of the substrate W. According to this example, the surface of the substrate W is dried while the fixing cover 70 is at a lower position. In detail, the fixing cover 70 is lowered to a position where the upper end of the fixing cover 70 is substantially the same height as the substrate W. In this position, the distance between the periphery of the substrate W and the fixed cover 70 is small. Therefore, water droplets and mist are prevented from flowing from the rear surface of the substrate W to the front surface. Figure 21 is a schematic vertical sectional view showing a substrate cleaning apparatus in accordance with a sixth embodiment of the present invention. The parts of the substrate cleaning apparatus according to the sixth embodiment which are the same as those of the substrate cleaning apparatus according to the first embodiment are denoted by the same reference numerals and will not be described in detail below. The operation details of the substrate cleaning apparatus according to the sixth embodiment are the same as those of the substrate cleaning apparatus according to the first embodiment, and will not be described below. As shown in Fig. 21, the inner rotary cover 75 is provided on the radially inner side of the rotary cover 3. This inner rotary cover 75 is fixed to the second stage 11B of the table 11. The rotary cover (first rotary cover) 3 and the inner rotary cover (second rotary cover) 75 are coupled to each other by a plurality of support arms 80. Therefore, the inner rotary cover 75 and the rotary cover 3 are rotatably coupled together. A gap is formed between the inner rotary cover 75 and the rotary cover 3. Fig. 22A is an enlarged vertical sectional view of the inner rotary cover 75 and the rotary cover 3, and Fig. 22B is a plan view of the inner rotary cover 75 and the jaws 10. Inner 22 320660 200922701 = The running cover 75 has a peripheral surface with a smooth arched vertical section. The angle of the outer peripheral surface of the inner turntable 75 with respect to the horizontal plane gradually increases from the minimum value of the upper end of the (four) p to the maximum value of the lower end. In detail, 槪 = the angle of the outer peripheral surface of the turn cover 75 with respect to the horizontal plane is (4) upper =, ', the spoon is 0 degrees, and the lower end is about 9 degrees. , ^ The upper end of the inner rotating cover 75 is located below the substrate w by the jaws μ. In other words, the outer peripheral surface of the inner rotating cover 75 is positioned below the upper surface of the substrate W, while the inner rotating cover 75 2 = the upper end of the peripheral surface is positioned above the lower surface of the substrate w: internal two shy 75 The upper end is located near the periphery of the substrate W. The direct control of the inner rotary cover 75疋 is slightly larger than the diameter of the substrate W. The surface of the inner rotary cover 75 preferably also has a smooth arched profile like its outer peripheral surface. The upper end of the inner rotary cover 75 has a plurality of recesses as shown in the figure. The recess 75a has a shape corresponding to the shape of the jaws 1'. The outer peripheral surface of the inner rotary cover 75 includes the slave substrate? The smooth parabola of the week. Therefore, when the substrate W is rotated, it is smoothly guided along the inner two == downward direction under the surface tension of the liquid. Therefore, the flowing liquid is water droplets or mist. Because the inner rotating cover 75 曰 & substrate W of the # ^ surface upper end light and the inner (four), is lower, so the liquid is trapped inside the substrate. In the gap between the turns cover 75. If the upper end of the inner surface of the inner surface ti 疋锝盍 75 is higher than the upper end of the substrate two substrates, the liquid flow from the substrate W/the inner rotating cover 75 is broken and converted into + #. Therefore, the inner (four) m LL water droplets or Fog. The outer peripheral surface of the 盍75 is located below the substrate 320660 23 200922701 - the inner peripheral surface of the micro-rotary cover 3 is substantially the same shape as the inner surface. In detail, the outer peripheral surface of the spin 5 has a vertical cross section. The inner peripheral surface of the rotary cover has the same height as the flat upper surface, or preferably is located below the substrate. The surface of the slightly rotating inner cover of the cover 3 | ^ . 砰 吕之, rotating cover 3 is called the rising shoulder sliding arch vertical section. The inner surface of the rotary cover 3 ^ has an angular value of the degree of the gradient from the minimum of the upper end of the rotary cover 3. More specifically, the innermost surface of the rotary cover 3 is at most 0 degrees from the upper end to the lower end, and is at the lower end: the angle of the surface, but the upper end of the rotary cover 3 also has a shape. Although there are a plurality of recesses in the shape of the unfinished figure. Therefore, the inner rotating cover 7 is not fixed to the inner peripheral surface of the inner rotation 3. In detail, the support arm 8 〇 = surface and the outer peripheral surface of the rotary cover and the rotary cover 3: the inner rotary cover 75 is fixed to the support arm 8 〇 = _ of the inner rotary cover. Figure 2u, and the first coffee chart is the illustration of the plane when the arm is viewed from above. Branch (4) SO has the opening of the leaf month ^ will = brother and does not show the rotating cover 3. When each cover 3 rotates, the branch arm will generate a downward flow in the gap between the cover 75 and the rotation, and the inner rotating cover 75 and _ between the rotary cover 75 and the rotary cover 3 can be liquid to the upper surface of the substrate. 3 rotates together with the substrate. Supply W Move to the inner swivel cover? 5 hearts such as 'pure water' flow down from the substrate by centrifugal force. During the condensing, the work is performed such that the outer peripheral surface of the rotary cover 75 forms a downward gas flow in the gap between the rotary cover 75 and the fulcrum arm 80 of the yoke. Therefore, the liquid 320660 24 200922701 - the mist and the water droplets are forcibly moved downward by the downward gas flow, and are prevented from coming on the surface of the substrate W. The gap between the inner rotary cover 75 and the square turn 3 can be appropriately adjusted so that the liquid can smoothly flow downward and prevent the mist from entering the space above the substrate w. (4) The surface of the rotary cover 75 and the rotary cover 3 is preferably a hydrophilic surface, and the release water droplets do not easily rotate when attached to the inner rotary cover 75 and the rotary cover 3. The father is ideally, the outer peripheral surface of the inner rotary cover 75 and/or The inner peripheral surface of the r portion has a spiral groove for guiding toward the inside. The liquid on the yoke 75 and on the rotating cover 3 is turned. The crucible (four) cover 75, the rotary cover 3, and the substrate w are located in the cleaning chamber. SC: The bottom has a gas outlet... and a liquid outlet training. Supply and release, a system of pure water such as pure water is discharged through the liquid outlet 51b by the branch arm 8 of the outlet outlet L, and the gas system of the downward flow is discharged through the gas a to be secreted to the gas. σ 51a causes the milk to break _ discharged from the cleaning chamber 51. ^置之二二: The substrate cleaning cover 85 of the sixth embodiment is shown. As shown in Figure 24: Middle. In this modification, the fixing cover 3 is attached. The fixed cover δ5 is disposed such that the fixed cover 85 is non-rotatable around the π mountain below the rotary end, and has the entire outer circumference of the rotating cover 3 =. Thus, the cover 85 is formed so as to cover the outer peripheral surface between the surfaces of the rotary cover 3 and the upper end of the inner circumference 85 of the fixed cover 85 and is not shown in the figure, but the shape of the shape of the fixed cover = ? The 85 recesses each have a diameter corresponding to the upper end of each of the clips --85, which is substantially the same as or slightly larger than the diameter of the upper end of the rotary cover 3 320660 25 200922701. The reason why the fixing cover 85 is provided is the same as the reason why the above-described fixing cover 45 is provided. Next, an example of a polishing apparatus having a substrate cleaning apparatus according to the above embodiment of the present invention will now be described. Fig. 25 is a plan view showing a polishing apparatus having a substrate cleaning apparatus according to any one of the first to sixth embodiments of the present invention. Fig. 26 is a schematic perspective view of the polishing apparatus shown in Fig. 25. As shown in Fig. 25, the polishing apparatus has a rectangular outer casing 100. The inner space of the outer casing 100 is partitioned into a loading and unloading portion 102, a polishing portion 130 (130a, 130b), and a cleaning portion 140 by partition walls 101a, 101b, 101c'. The loading and unloading section 102 has two or more front loading units 120 (three in Fig. 25) on which the cassettes each storing a plurality of substrates are placed. The front loading unit 120 is configured to abut each other along the width direction of the polishing apparatus (perpendicular to the longitudinal direction of the polishing apparatus). Each of the front loading units 120 can receive an open cassette, i: Standard Manufacturing Interface Pod (SMIF pod), or Front Opening Unif ied (FOUP pod) thereon. SMIF and FOUP are tightly sealed containers that house a wafer cassette and are covered with a dividing wall to provide an internal environment that is isolated from the outside space. Further, the loading and unloading portion 102 has a moving mechanism ι21 which extends in the direction in which the uranium planting unit 120 is disposed. The first transfer robot I" is disposed on the moving mechanism 121 and is movable along the configuration direction of the front loading unit 12. The first transfer robot 122 is operable to move in the mobile mechanism 121 320660 26 200922701 The wafer cassette is mounted on the front loading unit 120. The first transfer robot 122 has two hands that are vertically disposed and can be used independently. For example, 'the upper hand can be used to send the polished substrate back to the wafer. The lower hand can be used to transfer the unpolished substrate. The loading and unloading unit 102 is required to be the cleanest area. Therefore, the internal pressure of the loading and unloading unit 102 is maintained at any time outside the device. The pressure of the space, the polishing portion 130 and the cleaning portion 140 is high. Further, the filter fan unit having a clean air filter (such as a HEPA filter or a ULPA filter) (not shown) It is disposed above the moving mechanism 121 of the first transfer robot 12 2. The filter fan unit removes particles, toxic vapors, and toxic gases from the air to generate clean air, and constantly forms a downward flow. clear The polishing portion 130 is a region for polishing the substrate. The polishing portion 130 includes a first polishing portion 130a and a second polishing portion 130b, and has a first polishing unit 131A and a second polishing unit 131B in the first polishing portion i30a, In the second (two glazing portion 130b), there are a third polishing unit 131C and a fourth polishing unit 131D. As shown in Fig. 25, the first light-removing unit 131A, the second light-removing unit 131B, and the third polishing unit 131C And the fourth polishing unit 131D is disposed along the longitudinal direction of the polishing apparatus. The first light unit 131A includes: a polishing table 132A for holding the polishing pad; and a top ring 133A configured to hold the substrate and press the substrate against the substrate Polishing the polishing surface of the polishing pad on the stage 132A to polish the substrate; the polishing liquid supply nozzle 134A' is used to supply a polishing liquid (for example, a slurry) or a conditioning liquid (for example, pure water) to the polishing surface of the polishing pad; Dresser 27 320660 200922701 135A for trimming a polishing pad; and a sprayer (at〇mizer) 136A having a squirting/liquid for atomizing (eg, pure water) and a gas (eg, nitrogen) The mixture is sprayed onto the polishing surface. Similarly, the second polishing unit 131B includes a polishing table 132β, a top ring 133B, a polishing liquid supply nozzle 134B, a trimmer 135β, and a sprayer ΐ 36β. The third polishing unit 131C includes a polishing table 132c. The top ring 133C, the drag liquid supply nozzle 134C, the trimmer 135C, and the sprayer 136C. The fourth polishing unit 131D includes a polishing table 132D, a top ring_, a polishing liquid supply nozzle 134D, a trimmer 135D, and a sprayer 136D. The first linear transport 15 is disposed in the first light-removing portion 13A. The first linear handling H 15G system is configured to transfer the substrate between four transfer positions located along the longitudinal direction of the device (hereinafter, the four transfer positions are sequentially called from loading and unloading _ 1G2) It is the first transfer position TP2, the second 哉仏 哉仏 — - placement ΤΡ 3, and the fourth transfer position Τ ρ4). use
1 來機器人122所移载而來之基板之反轉機 上方:垂直可:一線性搬運器150之第-移載位置TP1之 上 直可移動之舉升器152係配置在第 置τρ1 之下方。垂直可移動之推動器153係 移載 TP2之下方,垂直可 i在弟-知载徂直 位置TP3之下方 動之推動器154係配置在第三移載 四移載位置TP4之^垂直可移動之推動器155配置在第 =第二抱光部13Gb,第二線性 第-線性搬運器150 m又成緊a 位於沿著抛光$置之^器⑽係配置成於 、’、。之二個移载位置之間移載基板 320660 28 200922701 (下文中,此三個移載位置係從裝載及卸載部102依序將稱 為第五移載位置TP5、第六移載位置TP6、和第七移載位置 TP7)。垂直可移動之舉升器166係配置在第五移載位置TP5 之下方,垂直可移動之推動器167係配置在第六移載位置 TP6之下方,而垂直可移動之推動器168係配置在第七移 載位置TP7之下方。 如第26圖中所示,第一線性搬運器150具有4個移載 工作台:第一工作台、第二工作台、第三工作台、和第四 工作台。這些移載工作台具有雙線結構,包含上線和下線。 詳言之,第一移載工作台、第二移載工作台、和第三移載 工作台配置在下線,而第四移載工作台配置在上線。 下方之移載工作台和上方之移載工作台能夠自由移動 而不會彼此干擾,因為他們設在不同的高度。第一移載工 作台係於第一移載位置TP1·和第二移載位置(亦即,基板接 收/傳送位置)TP2之間移載基板。第二移載工作台係於第 二移載位置TP2和第三移載位置(亦即,基板接收/傳送位 置)TP3之間移載基板。第三移載工作台係於第三移載位置 TP3和第四移載位置TP4之間移載基板。第四移載工作台 係於第一移載位置TP1和第四移載位置TP4之間移載基板。 第二線性搬運器160具有與第一線性搬運器150實質 上相同的結構。詳言之,第五移載工作台和第六移載工作 台配置在上線,而第七移載工作台配置在下線。第五移載 工作台係於第五移載位置TP5和第六移載位置(亦即,基板 接收/傳送位置)TP6之間移載基板。第六移載工作台係於 29 320660 200922701 第/、和載位置TP6和第七移載位置(亦即,基板接收/傳送 位置)TP7之間移載基板。第七移載工作台係於第五移載位 置TP5和第七移載位ϊ TP7之間移載基板。 如仉拋光期間係使用漿料之事實可以了解到者,拋光 ^ 130為取_之區域。因此,Λ 了防止微粒散佈至拋光 邰13〇外面,而從個別拋光台之周園空間排放氣體。此外, ;光°卩之内部的壓力係設定為較裝置之外部、清洗 ^ 140和裝载及卸載部102之壓力為低,由此防止微粒 之氣政。一般情況是,將排放管(圖式中未顯示)分別設於 拋光σ之下方,將濾清器(圖式中未顯示)設於拋光台之上 方,而形成從濾清器至排放管向下流動的清潔空氣。 # β洗部140為清洗拋光之基板之區域。清洗部140包 3第-移載機器人124、用於將從該第二移載機器人124 所接收之基板予以反轉之反轉機14丨、用來清洗經抛光之 基板之四個清洗單元142至145、和用來在反轉機1C和 清洗單元142至145之間移載基板之移載單元146。 第二移載機器人124、反轉機141、和清洗單元142至 145係依序沿著拋光裝置之縱向配置。具有清潔空氣濾清 益之濾清器風扇單元(圖式中未顯示)係設在清洗單元142 至145之上方。此濾、清器風扇單元組構成從空氣去除微粒 以產生凊潔空氣’並恆常地形成向下流動之清潔空氣。於 清洗部14〇之壓力係保持成較拋光部13〇之壓力為高,而 防止於拖光部130之微粒流進清洗部mo中。 私载單元146具有複數個臂,其係構成用來固持基 320660 30 200922701 板’而使得複數個基板能夠藉由該等臂而在反轉機141與 >月洗單元142至145之間彼此一起地被水平移動。清洗單 元142和清洗單元143可以包括:例如具有上部和下部輥 式海棉(roll-shaped sponge)之輥型清洗單元,該輥式海 棉係旋轉並壓靠基板之前表面和後表面,由此清潔基板之 前表面和後表面。清洗單元144可以包括:例如具有半球 海棉之筆型清洗單元,該半球海棉係旋轉並壓靠基板以清 洗基板。清洗單元145包括依照任何其中一個實施例之上 述基板清洗裝置。於清洗單元142至144中,除了上述之 報型清洗單元或筆型清洗單元,可另外設姻以施加超音 波於清洗液以清洗基板的超高音波型清洗單元卿漏^ type cleaning unit)。 。。開閉器(s h u 11 e r) 11G係裝置於反轉機i 5}與第一移韋 機器人122之間。.當移载基板時’將開閉器ii〇打開,^ 將基板傳送於第-移載機器人122與反轉機ΐ5ι之間。庚 閉器η卜m、113、和114亦分別設於反轉機i4i㈣ :移載機器人124之間、反轉機141肖清洗單元142之間 ,一抛光部13Ga與第二移载機器人m之間、和第二㈣ 4130b與第二移載機器人12 些開閉器叫、112、113、和114:開“撕時^^^^ 顯示)安裝缝光台職上。抛光台132 為中心下方之馬達(未顯示),並可以其自己的車 示’頂環13_謂 、衣 Α耦接至馬達和舉升缸(未顯示)c 320660 31 200922701 因此頂環133A能夠垂直地移動並以頂環軸137A為中心旋 轉。待拋光之基板藉由真空吸力等方式而被吸引並固持於 頂環133A之下表面。拋光墊之上表面係構成用來與基板w 滑動接觸之拋光表面。 被固持於頂環133A之下表面上之基板係被旋轉且藉 由頂壞133A祕在旋轉中之拋光台132A上之拋光塾。將 拋光液從抛光液供應噴嘴134A供應至拋光塾之拋光表面 (上表面)於基板w與抛面之㈤存在有拋光液之情形 中拋光基板。拋光台132A和頂環133A係構成在基板w與 拋絲面之間提供相對運動的機構。第二拋光料ΐ3ΐβ、 第亡拋光單元131C、和第四拋光單元mD具有與第一抛 光單元131A相同的結構,而因此省略其詳細說明。 撤光之並行式處理 田行序列式處裡時,基板以下 载單元12G之晶!^盒^路線被移送1 〜舉升琴1R9锋 私載桟裔人122—反轉機] σ 苐一線性搬運器15〇之第一移載工作么 動益153—頂環133Α_拋光台U2A = 線性搬運器、150之第二移載工作台推動1 1 133B—拋光a n沖格七 推動态154〜頂 第:㈣:2“推動器15“第-線性搬運器150 台,升…第二移载機器人心 二線性搬運器16。之第五移载工作台〜推 頂% 133C—抛光台13心推動器⑻—第二線 320660 32 200922701 搬運器160之第六移載工作台—推動器168—頂環133D— 拋光台132D—推動器168—第二線性搬運器160之第七移 載工作台—舉升器166—第二移載機器人124—反轉機141 —移載單元146—清洗單元142—移載單元146->清洗單元 143-^移載单元146—清洗单元144—移載羊元146—清洗 單元145—第一移載機器人122—前裝載單元120之晶圓匣 盒。 當執行並行式處裡時,基板以下列路線被移送:前裝 載單元120之晶圓匣盒—第一移載機器人122—反轉機151 —舉升器152—第一線性搬運器150之第一移載工作台— 推動器153—頂環133A—拋光台132A->推動器153―第一 線性搬運器150之第二移載工作台—推動器154—頂環 133B—拋光台132B—推動器154—第一線性搬運器150之 第三移載工作台—舉升器155—第二移載機器人124—反 轉機141 —移載單元146—清洗單元142—移載單元146— 清洗單元143—移載單元146—清洗單元144—移載單元 146—清洗單元145—第一移載機器人122—前裝載單元 120之晶圓匣盒。 另一個基板以下列之路線被移送:前裝載單元120之 晶圓匣盒—第一移載機器人122—反轉機151 —舉升器152 —第一線性搬運器150之第四移載工作台—舉升器155— 第二移載機器人124—舉升器166—第二線性搬運器160之 第五移載工作台-^推動器16 7—頂環13 3C—抛光台13 2C— 推動器167—第二線性搬運器160之第六移載工作台-推 33 320660 200922701 動器168—頂環133D—拋光台132D—推動器168—第二線 性搬運器160之第七移載工作台—舉升器166—第二移載 機器人124->反轉機141—移載單元146—清洗單元142— 移載單元146—清洗單元143—移載單元146—清洗單元 144—移載單元146—清洗單元145—第一移載機器人122 —前裝載單元120之晶圓匣盒。 以下將說明具備有依照第一至第六實施例之其中任一 實施例之基板洗淨裝置之另一種拋光裝置。第27圖為具備 有依照本發明之第一至第六實施例之其中任一實施例之基 板洗淨裝置之另一抛光裝置之平面圖。 如第27圖中所示,拋光裝置包含裝載及卸載部201, 用於容置複數個晶圓匣盒204,於該匣盒204中儲存有許 多基板。具有二個手之移載機器人202係安裝於移動機構 200上,以便存取於裝載及卸載部201中之晶圓匣盒204。 移動機構200使用線性馬達機構,其允許移載機器人202 以高速穩定地載送大直徑和重的基板。 拋光裝置亦包含二個清洗單元212,其係配置在晶圓 匣盒204的相對於移載機器人202之移動機構200之相反 侧。各清洗單元212為依照本發明之第一至第六實施例之 其中任一實施例之基板洗淨裝置。清洗單元212配置在能 夠由移載機器人202之手伸達之個別位置。具有四個基板 放置台之晶圓站206配置在二個清洗單元212之間。此晶 圓站206係位於能夠由移載機器人202之手伸達之位置。 二個移載機器人208配置在其手能夠伸達各個清洗單 34 320660 200922701 元212和晶圓站206的個別位置。二個清洗單元21 *分別 配置成鄰靠清洗單元212。這些清洗單元214係位於使得 移載機器人208之手能夠分別伸達清洗單元214之位置。 旋轉搬運器210配置在能夠由移載機器人Mg之手伸達之 位置。一個拋光單元250配置在該拋光單元mo能夠移送 基板至該旋轉搬運器210和從該旋轉搬運器2丨〇移送基板 之位置。可以設置單一移載機器人208以取代二個移載機 器人208。1 Above the reversing machine of the substrate transferred by the robot 122: vertical: a linearly movable lifter 152 above the first transfer position TP1 of the linear carrier 150 is disposed below the first set τρ1 . The vertically movable pusher 153 is moved below the TP2, and the pusher 154 that is vertically movable below the traverse position TP3 is disposed vertically at the third transfer four transfer position TP4. The pusher 155 is disposed in the second = second light holding portion 13Gb, and the second linear first linear transporter 150m is placed in a tight a position along the polishing device (10). The transfer substrate between the two transfer positions is 320660 28 200922701 (hereinafter, the three transfer positions are sequentially referred to as the fifth transfer position TP5 and the sixth transfer position TP6 from the loading and unloading portion 102, And the seventh transfer position TP7). The vertically movable lifter 166 is disposed below the fifth transfer position TP5, the vertically movable pusher 167 is disposed below the sixth transfer position TP6, and the vertically movable pusher 168 is disposed in the The seventh transfer position is below the TP7. As shown in Fig. 26, the first linear carrier 150 has four transfer stages: a first stage, a second stage, a third stage, and a fourth stage. These transfer stations have a two-wire structure with upper and lower lines. In detail, the first transfer workbench, the second transfer workbench, and the third transfer workbench are disposed on the lower line, and the fourth transfer work stage is disposed on the upper line. The transfer table below and the transfer table above can move freely without interfering with each other because they are located at different heights. The first transfer station transfers the substrate between the first transfer position TP1· and the second transfer position (i.e., substrate receiving/transfer position) TP2. The second transfer stage transfers the substrate between the second transfer position TP2 and the third transfer position (i.e., substrate receiving/transfer position) TP3. The third transfer stage transfers the substrate between the third transfer position TP3 and the fourth transfer position TP4. The fourth transfer stage transfers the substrate between the first transfer position TP1 and the fourth transfer position TP4. The second linear carrier 160 has substantially the same structure as the first linear carrier 150. In detail, the fifth transfer station and the sixth transfer station are disposed on the upper line, and the seventh transfer stage is disposed on the lower line. The fifth transfer stage transfers the substrate between the fifth transfer position TP5 and the sixth transfer position (i.e., the substrate receiving/transfer position) TP6. The sixth transfer stage transfers the substrate between 29 320660 200922701 /, and the load position TP6 and the seventh transfer position (i.e., substrate receiving/transfer position) TP7. The seventh transfer stage transfers the substrate between the fifth transfer position TP5 and the seventh transfer position TP TP7. For example, if the slurry is used during polishing, it can be known that the polishing is 130. Therefore, it is possible to prevent the particles from being scattered outside the polishing crucible 13 to discharge the gas from the circumferential space of the individual polishing table. Further, the pressure inside the light is set to be lower than the pressure outside the apparatus, the cleaning unit 140, and the loading and unloading unit 102, thereby preventing the gas flow of the particles. In general, the discharge pipes (not shown in the drawings) are respectively disposed below the polishing σ, and the filter (not shown) is disposed above the polishing table to form a filter from the filter to the discharge pipe. Clean air flowing under. The #β wash unit 140 is an area for cleaning the polished substrate. The cleaning unit 140 includes a first-transfer robot 124, a reversing machine 14 for reversing the substrate received from the second transfer robot 124, and four cleaning units 142 for cleaning the polished substrate. Up to 145, and a transfer unit 146 for transferring the substrate between the reversing machine 1C and the cleaning units 142 to 145. The second transfer robot 124, the reversing machine 141, and the cleaning units 142 to 145 are sequentially disposed along the longitudinal direction of the polishing apparatus. A filter fan unit (not shown) having a clean air filter is disposed above the cleaning units 142 to 145. This filter and cleaner fan unit group constitutes the removal of particulates from the air to produce clean air' and constantly forms a clean air flowing downward. The pressure in the cleaning unit 14 is maintained at a higher pressure than the polishing portion 13〇, and the particles of the drag unit 130 are prevented from flowing into the cleaning unit mo. The private unit 146 has a plurality of arms configured to hold the base 320660 30 200922701 board' such that a plurality of substrates can be mutually coupled between the reversing machine 141 and the > month washing units 142 to 145 by the arms Moved horizontally together. The cleaning unit 142 and the cleaning unit 143 may include, for example, a roll type cleaning unit having upper and lower roll-shaped sponges that rotate and press against the front surface and the rear surface of the substrate, thereby Clean the front and back surfaces of the substrate. The cleaning unit 144 may include, for example, a pen-type cleaning unit having a hemispherical sponge that rotates and presses against the substrate to clean the substrate. The cleaning unit 145 includes the substrate cleaning apparatus described above in accordance with any one of the embodiments. In the cleaning units 142 to 144, in addition to the above-described pattern cleaning unit or pen type cleaning unit, an ultra-high-sonic cleaning unit for applying ultrasonic waves to the cleaning liquid to clean the substrate may be additionally provided. . . The shutter (s h u 11 e r) 11G is installed between the reversing machine i 5} and the first shifting robot 122. When the substrate is transferred, the shutter ii is opened, and the substrate is transferred between the first transfer robot 122 and the reversing robot ΐ5. The buckers η, m, 113, and 114 are also respectively disposed between the reversing machine i4i (four): between the transfer robots 124 and the reversing machine 141, the polishing unit 13Ga, and the second transfer robot m And the second (four) 4130b and the second transfer robot 12 some of the shutters, 112, 113, and 114: open the "tear ^ ^ ^ ^ display" installation of the sewing station. The polishing table 132 is below the center Motor (not shown), and can be its own car display 'top ring 13 _, the raft is coupled to the motor and lift cylinder (not shown) c 320660 31 200922701 so the top ring 133A can move vertically and with the top ring The shaft 137A is rotated centrally. The substrate to be polished is attracted and held by the vacuum suction or the like on the lower surface of the top ring 133A. The upper surface of the polishing pad constitutes a polishing surface for sliding contact with the substrate w. The substrate on the lower surface of the top ring 133A is rotated and polished by the top 133A on the polishing table 132A in rotation. The polishing liquid is supplied from the polishing liquid supply nozzle 134A to the polishing surface of the polishing crucible (upper surface) In the case where there is a polishing liquid on the substrate w and the throwing surface (5) Polishing the substrate. The polishing table 132A and the top ring 133A constitute a mechanism for providing relative motion between the substrate w and the polishing surface. The second polishing material ΐ3ΐβ, the first polishing unit 131C, and the fourth polishing unit mD have the first The polishing unit 131A has the same structure, and thus its detailed description is omitted. When the light-removing parallel processing is performed in the sequence of the field row, the substrate is transferred by the crystal of the download unit 12G! ^Box^ route 1 ~ Lifting the piano 1R9 Feng private桟 122 122 122 122 122 线性 线性 线性 线性 线性 线性 线性 线性 线性 线性 线性 线性 153 153 153 153 153 153 153 153 153 153 Α Α Α Α 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光 抛光1 1 133B—Polishing ancillary seven-push dynamic 154~top: (iv): 2 “pusher 15” first-linear carrier 150 sets, liter... second transfer robot core two linear carrier 16. fifth shift Load table ~ push top % 133C - polishing table 13 heart pusher (8) - second line 320660 32 200922701 sixth transfer table of carrier 160 - pusher 168 - top ring 133D - polishing table 132D - pusher 168 - The seventh transfer table of the second linear carrier 160 - the lift 1 66 - second transfer robot 124 - reversing machine 141 - transfer unit 146 - cleaning unit 142 - transfer unit 146 - > cleaning unit 143 - ^ transfer unit 146 - cleaning unit 144 - transfer sheep 146 - The cleaning unit 145 - the first transfer robot 122 - the wafer cassette of the front loading unit 120. When the parallel type is executed, the substrate is transferred in the following route: the wafer cassette of the front loading unit 120 - the first transfer Robot 122 - reversing machine 151 - lift 152 - first transfer station of first linear carrier 150 - pusher 153 - top ring 133A - polishing table 132A - > pusher 153 - first linear The second transfer table of the carrier 150 - the pusher 154 - the top ring 133B - the polishing table 132B - the pusher 154 - the third transfer station of the first linear carrier 150 - the lifter 155 - the second shift Loading robot 124 - reversing machine 141 - transfer unit 146 - cleaning unit 142 - transfer unit 146 - cleaning unit 143 - transfer unit 146 - cleaning unit 144 - transfer unit 146 - cleaning unit 145 - first transfer robot 122—The wafer cassette of the front loading unit 120. The other substrate is transferred in the following manner: the wafer cassette of the front loading unit 120 - the first transfer robot 122 - the reversing machine 151 - the lift 152 - the fourth transfer operation of the first linear carrier 150 Stage - lift 155 - second transfer robot 124 - lift 166 - fifth transfer station of second linear carrier 160 - pusher 16 7 - top ring 13 3C - polishing table 13 2C - push 167 - sixth transfer station of second linear carrier 160 - push 33 320660 200922701 actuator 168 - top ring 133D - polishing table 132D - pusher 168 - seventh transfer table of second linear carrier 160 - Lifter 166 - Second Transfer Robot 124 - > Reversing Machine 141 - Transfer Unit 146 - Cleaning Unit 142 - Transfer Unit 146 - Cleaning Unit 143 - Transfer Unit 146 - Cleaning Unit 144 - Transfer Unit 146 - Cleaning Unit 145 - First Transfer Robot 122 - Wafer cassette of front loading unit 120. Another polishing apparatus provided with the substrate cleaning apparatus according to any of the first to sixth embodiments will be described below. Figure 27 is a plan view showing another polishing apparatus having a substrate cleaning apparatus according to any of the first to sixth embodiments of the present invention. As shown in Fig. 27, the polishing apparatus includes a loading and unloading portion 201 for accommodating a plurality of wafer cassettes 204 in which a plurality of substrates are stored. A transfer robot 202 having two hands is mounted on the moving mechanism 200 for accessing the wafer cassette 204 in the loading and unloading portion 201. The moving mechanism 200 uses a linear motor mechanism that allows the transfer robot 202 to stably carry large diameter and heavy substrates at high speed. The polishing apparatus also includes two cleaning units 212 disposed on opposite sides of the wafer cassette 204 relative to the moving mechanism 200 of the transfer robot 202. Each cleaning unit 212 is a substrate cleaning apparatus according to any one of the first to sixth embodiments of the present invention. The cleaning unit 212 is disposed at an individual position that can be reached by the hand of the transfer robot 202. A wafer station 206 having four substrate placement stages is disposed between the two cleaning units 212. This wafer station 206 is located at a position that can be reached by the hand of the transfer robot 202. The two transfer robots 208 are configured to be able to reach individual positions of the respective cleaning sheets 34 320660 200922701 and 212 and the wafer station 206. The two cleaning units 21* are respectively disposed adjacent to the cleaning unit 212. These cleaning units 214 are located at positions where the hand of the transfer robot 208 can reach the cleaning unit 214, respectively. The rotary carrier 210 is disposed at a position that can be reached by the hand of the transfer robot Mg. A polishing unit 250 is disposed at a position where the polishing unit mo can transfer the substrate to the rotary carrier 210 and transfer the substrate from the rotary carrier 2 . A single transfer robot 208 can be provided to replace the two transfer robots 208.
( 該抛光裝置具有線上厚度監視器(In-line ThiekneSS(The polishing device has an in-line thickness monitor (In-line ThiekneSS
Monitor ; ITM)224作為用來測量已經被洗淨和乾燥之基板 之表面狀(譬如膜厚度)之測量單元。此ITM 224可設成 在拋光基板之則或之後執行測量。如第2 7圖中所示,ITM 224定位於移動機構200之延伸部,或者換言之,於移動 •機構200之端部。於移載機器人202將經拋光之基板移送 回到其中一個晶圓匣盒204中之前、或者於移載機器人2〇2 / 伙其中一個晶圓匿盒204移出待抛光之基板之後,itm 224 根據使用光學機構施加於基板並於基板反射之光學訊號而 測罝基板(例如’半導體晶圓)之表面上的銅膜或阻障膜之 搬光狀態。 各拋光單元250包含拋光台230、頂環231、用來供應 拋光液至拋光台230上拋光墊(未顯示)之拋光液供應喷嘴 232、用來修整拋光墊之修整器218、和儲存水用來洗淨該 修整器218之水槽222。 以下將說明第27圖中所示拋光裝置之操作。 320660 35 200922701 儲存各具有形成於其表面上之導電膜(譬如鋼膜)之許 多基板之晶圓匣盒204係被安置於裝載及卸載部2〇1中。 移載機器人202從其中一個晶圓匣盒204中移出基板,並 將該經移出之基板放置在晶圓站206。其中一個移載機器 人208從晶圓站206接收基板,若需要的話將其上下反轉, 並將該基板移送至旋轉搬運器210。該旋轉搬運器21〇於 水平面旋轉,而於該旋轉搬運器210上之基板係由其中— 個拋光單元250之頂環231所固持。 1 由頂環231所固持之基板被移至在拋光台23〇上方之 拋光位置。當令頂環231和拋光台230旋轉之同時,將基 板降下並壓靠拋光墊之拋光表面。在將拋光液從拋光液供 應喷嘴232供應至拋光表面時,拋光該基板。 經拋光之基板係經由旋轉搬運器21〇移送至移載機器 人208,若需要的話該移載機器人2〇8將基板上下反轉, 並將該基板傳送至其中一個清洗單元214。於已執行了拋 (光製程之拋光單元250中,拋光墊之拋光表面由修整器218 所修整,以便準備好用來拋光下一個基板。 /月洗單元214清除並沖洗基板之表面,然後乾燥該基 板。然後經乾燥之基板藉由移載機器人2〇8被移送並放置 在晶圓站206。移載機器人202從該晶圓站2〇6移去該經 乾燥之基板,並將該基板移送至其中一個清洗單元212, 而於該清洗單π 212清洗和乾燥該基板。已清洗和乾燥之 基板由移載機器人202送返至原來的晶圓匣盒2〇4。 因為拋光裝置具有二組之拋光單元25〇、清洗單元 320660 36 200922701 212、和清洗單元214,因此拋光裝置能夠同時對二個基板 執行一系列之製程,包含抛光、清洗、和乾燥。單一基板 可由二個拋光單元250來拋光。 雖然已顯示和詳細說明了本發明之某些較佳實施例, 但是應該了解到在由申請專利範圍、說明書、和圖式所界 定之技術觀念範圍内可作各種之改變和修釋。 【圖式簡單說明】 第1圖為依照本發明第一實施例之基板洗淨裝置之示 意垂直剖面圖; 第2圖為第1圖中所示之基板洗淨裝置之平面圖; 第3圖為第1圖中所示之基板洗淨裝置於基板被升高 時之示意垂直剖面圖; 第4圖為第1圖中所示之基板洗淨裝置之基板固持機 構之平面圖; 第5圖為顯示液體流經第1圖中所示之基板洗淨裝置 之路徑之圖示; 第6圖為顯示氣體流經第1圖中所示之基板洗淨裝置 之路徑之圖示; 第7圖為顯示依照第一實施例之基板洗淨裝置之旋轉 蓋之内周表面之變形例之放大垂直剖面圖; 第8圖為依照第一實施例之基板洗淨裝置於將基板舉 升到該旋轉蓋之上端時之放大垂直剖面圖; 第9圖為依照本發明第二實施例之基板洗淨裝置之示 意垂直剖面圖; 37 320660 200922701 第10圖為第9圖中所示之基板洗淨裝置於將基板以推 桿升高時之示意垂直剖面圖; 第11圖為依照第二實施例之基板洗淨裝置之旋轉蓋 之變形例之放大剖面圖; 第12圖為依照本發明第三實施例之基板洗淨裝置之 示意垂直剖面圖; 第13圖為顯示氣體流經第12圖中所示之基板洗淨裝 置之路徑之圖示; 第14圖為依照第三實施例之基板洗淨裝置之變形例 之示意垂直剖面圖; 第15圖為依照本發明第四實施例之基板洗淨裝置之 示意垂直剖面圖; 第16圖為依照本發明第五實施例之基板洗淨裝置之 示意垂直剖面圖] 第17圖為依照本發明之參考例之基板洗淨裝置之示 意垂直剖面圖; 第18圖為依照本發明之另一參考例之基板洗淨裝置 之示意垂直剖面圖; 第19圖為依照本發明之又另一參考例之基板洗淨裝 置之示意垂直剖面圖; 第20圖為依照本發明之又另一參考例之基板洗淨裝 置之示意垂直剖面圖; 第21圖為依照本發明第六實施例之基板洗淨裝置之 不意垂直剖面圖; 38 320660 200922701 第22A圖為内部旋轉蓋和外部旋轉蓋之放大垂直剖面 圖; 第22B圖為内部旋轉蓋和夹爪之平面圖; 第23A圖為固定於内部旋轉蓋之支撐臂之從上方觀看 時之平面圖; 第23B圖為第23A圖中所示之支撐臂當從徑向外側觀 看時之圖示; 第24圖為顯示依照本發明第六實施例之基板洗淨裝 置之,有附加之固定蓋之變形例的示意垂直剖面圖; 第25圖為具備有依照本發明之第一至第六實施例中 之任一基板洗淨裝置之拋光裝置之平面圖; ,26圖為第25圖中所示拋光裝置之示意透視圖; 第27圖為具備有依照本發明之第一至第六實施例中 之任一基板诜淨裝置之另一拋光裝置之平面圖.; 第28圖為習知之基板洗淨裝置之示意透視圖,·以及 第29圖為第28圖中所示之基板洗淨裝置之平面圖。 【主要元件符號說明】 基板固持機構 2 馬達 旋轉蓋 3a 凹部 前喷嘴 10 夾爪 工作台 11A 第一工作台 通孔 11B 第二工作台 第一支稽'轴 12B 弟一支擇轴 線性運動導引機構 17 後噴嘴 1 3 4 11 11a 12A 15 320660 39 200922701 18 氣體喷嘴 20、 21喷嘴 23 制動器 24 摩馬接機構 25 排放孔 26 輔助排放孔 28 裙 30 液體出口通道 31 氣體出口通道 32 吸引源 35 固定板 40 推桿 42 輔助旋轉蓋 44 排放孔 45 固定蓋 46、 47排出口 50 鰭片 51 清洗室 51a 氣體出口 51b 液體出口 53 液體吸收器 60 基板固持機構 61 工作台 62 支稽'轴 63 液體儲槽 64 出水口 65 ,屏蔽蓋 70 固定蓋 75 内部旋轉蓋 75a 凹部 80 支撐臂 85 固定蓋 100 外殼 101a 、101b、101c 分隔壁 102 裝載及卸載部 110、 111 > 112 ' 113 ' 114 開閉器 120 前裝載單元 121 移動機構 122 第一移載機器人 124 第二移載機器人 130 抛光部 130a 第一搬光部 131A 第一搬光單元 130b 第二拋光部 131B 第二抱光單元 131C 第三抛光單元 40 320660 200922701 131D 第四拋光單元 132A、132B、132C、132D 拋光台 133A、133B、133C、133D 頂環 134A、134B、134C、134D拋光液供應喷嘴 135A、135B、135C、135D 修整器 136A、136B、136C、136D 喷霧器 137A、137B、137C、137D 頂環轴 140 清洗部 14卜 151反轉機 142至145清洗單元 146 移載早兀 150 第一線性搬運器 152、 166舉升器 153、 154 、 155 、 167 、 168推動器 160 第二線性搬運器 200 移動機構 201 裝載及卸載部 202 移載機器人 204 晶圓盒 206 晶圓站 208 移載機器人 210 旋轉搬運器 212 清洗單元 214 清洗單元 218 修整器 222 水箱 224 線上厚度監視器(ITM) 230 抛光台 231 頂環 232 抛光液供應噴嘴 250 拋光單元 TP1 第一移载位置 TP2 第二移载位置 TP3 弟二移载位置 TP4 第四移载位置 TP5 第五移載位置 TP6 第六移载位置 TP7 第七移載位置 W 基板 320660 41Monitor; ITM) 224 is used as a measuring unit for measuring the surface shape (e.g., film thickness) of the substrate which has been washed and dried. This ITM 224 can be configured to perform measurements after or after polishing the substrate. As shown in Figure 27, the ITM 224 is positioned at the extension of the mobile mechanism 200, or in other words, at the end of the mobile device 200. After the transfer robot 202 transfers the polished substrate back to one of the wafer cassettes 204, or after the transfer robot 2 〇 2 / one of the wafer cassettes 204 moves out of the substrate to be polished, the itm 224 is based on The optical state of the copper film or the barrier film on the surface of the substrate (eg, 'semiconductor wafer) is measured using an optical signal applied to the substrate by the optical mechanism and reflected on the substrate. Each polishing unit 250 includes a polishing table 230, a top ring 231, a polishing liquid supply nozzle 232 for supplying polishing liquid to a polishing pad (not shown) on the polishing table 230, a dresser 218 for conditioning the polishing pad, and a storage water The sink 222 of the dresser 218 is washed. The operation of the polishing apparatus shown in Fig. 27 will be explained below. 320660 35 200922701 A wafer cassette 204 storing a plurality of substrates each having a conductive film (such as a steel film) formed on the surface thereof is placed in the loading and unloading portion 2〇1. The transfer robot 202 removes the substrate from one of the wafer cassettes 204 and places the removed substrate at the wafer station 206. One of the transfer robots 208 receives the substrate from the wafer station 206, reverses it upside down if necessary, and transfers the substrate to the rotary carrier 210. The rotary carrier 21 is rotated in a horizontal plane, and the substrate on the rotary carrier 210 is held by the top ring 231 of the polishing unit 250. 1 The substrate held by the top ring 231 is moved to a polishing position above the polishing table 23A. While the top ring 231 and the polishing table 230 are being rotated, the substrate is lowered and pressed against the polishing surface of the polishing pad. When the polishing liquid is supplied from the polishing liquid supply nozzle 232 to the polishing surface, the substrate is polished. The polished substrate is transferred to the transfer robot 208 via the rotary carrier 21, and if necessary, the transfer robot 2〇8 reverses the substrate upside down and transfers the substrate to one of the cleaning units 214. In the polishing process in which the polishing process has been performed, the polishing surface of the polishing pad is trimmed by the trimmer 218 so as to be ready for polishing the next substrate. The / month wash unit 214 removes and rinses the surface of the substrate, and then dries. The substrate is then transferred by the transfer robot 2〇8 and placed at the wafer station 206. The transfer robot 202 removes the dried substrate from the wafer station 2〇6 and the substrate The substrate is transferred to one of the cleaning units 212, and the substrate is cleaned and dried by the cleaning sheet π 212. The cleaned and dried substrate is returned by the transfer robot 202 to the original wafer cassette 2〇4. The polishing unit 25〇, the cleaning unit 320660 36 200922701 212, and the cleaning unit 214, so that the polishing apparatus can simultaneously perform a series of processes on the two substrates, including polishing, cleaning, and drying. The single substrate can be polished by two polishing units 250. Polishing. While certain preferred embodiments of the present invention have been shown and described, it should be understood that the scope of the claims, the description, and the drawings Various changes and modifications can be made within the scope of the technical concept. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic vertical sectional view of a substrate cleaning apparatus according to a first embodiment of the present invention; FIG. 2 is a first diagram FIG. 3 is a schematic vertical cross-sectional view of the substrate cleaning apparatus shown in FIG. 1 when the substrate is raised; FIG. 4 is a substrate cleaning shown in FIG. A plan view of the substrate holding mechanism of the device; FIG. 5 is a view showing a path through which the liquid flows through the substrate cleaning device shown in FIG. 1; FIG. 6 is a view showing that the gas flows through the substrate shown in FIG. FIG. 7 is an enlarged vertical sectional view showing a modification of the inner circumferential surface of the rotary cover of the substrate cleaning apparatus according to the first embodiment; FIG. 8 is a substrate according to the first embodiment. FIG. 9 is a schematic vertical cross-sectional view of the substrate cleaning apparatus according to the second embodiment of the present invention; FIG. 9 is a schematic vertical sectional view of the substrate cleaning apparatus according to the second embodiment of the present invention; 37 320660 200922701 The substrate cleaning device shown in Figure 9 FIG. 11 is a schematic enlarged cross-sectional view showing a modification of the rotating cover of the substrate cleaning device according to the second embodiment; FIG. 12 is a third sectional view showing a modification of the rotary cover of the substrate cleaning device according to the second embodiment; A schematic vertical cross-sectional view of the substrate cleaning apparatus of the embodiment; FIG. 13 is a view showing a path of the gas flowing through the substrate cleaning apparatus shown in FIG. 12; and FIG. 14 is a substrate washing according to the third embodiment. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 15 is a schematic vertical sectional view of a substrate cleaning apparatus according to a fourth embodiment of the present invention; and FIG. 16 is a substrate cleaning apparatus according to a fifth embodiment of the present invention. Figure 17 is a schematic vertical sectional view of a substrate cleaning apparatus according to a reference example of the present invention; and Figure 18 is a schematic vertical sectional view of a substrate cleaning apparatus according to another reference example of the present invention; Figure 19 is a schematic vertical sectional view of a substrate cleaning apparatus according to still another reference example of the present invention; and Figure 20 is a schematic vertical sectional view of a substrate cleaning apparatus according to still another reference example of the present invention; An unintentional vertical sectional view of a substrate cleaning apparatus according to a sixth embodiment of the present invention; 38 320660 200922701 Fig. 22A is an enlarged vertical sectional view of the inner rotary cover and the outer rotary cover; and Fig. 22B is an inner rotary cover and a jaw Fig. 23A is a plan view of the support arm fixed to the inner rotary cover when viewed from above; Fig. 23B is a view of the support arm shown in Fig. 23A when viewed from the radially outer side; Fig. 24 is a view A schematic vertical sectional view showing a modification of an additional fixing cover according to a substrate cleaning apparatus according to a sixth embodiment of the present invention; and FIG. 25 is a view showing any one of the first to sixth embodiments according to the present invention. A plan view of a polishing apparatus for a substrate cleaning apparatus; 26 is a schematic perspective view of the polishing apparatus shown in Fig. 25; and Fig. 27 is a substrate having any one of the first to sixth embodiments according to the present invention. A plan view of another polishing apparatus of the cleaning apparatus. Fig. 28 is a schematic perspective view of a conventional substrate cleaning apparatus, and Fig. 29 is a plan view of the substrate cleaning apparatus shown in Fig. 28. [Main component symbol description] Substrate holding mechanism 2 Motor rotating cover 3a Recessed front nozzle 10 Clamping table 11A First working table through hole 11B Second working table First branch 'Axis 12B Younger one axis-selective motion guidance Mechanism 17 Rear nozzle 1 3 4 11 11a 12A 15 320660 39 200922701 18 Gas nozzle 20, 21 Nozzle 23 Brake 24 Momming mechanism 25 Discharge hole 26 Auxiliary discharge hole 28 Skirt 30 Liquid outlet passage 31 Gas outlet passage 32 Suction source 35 Fixed Plate 40 push rod 42 auxiliary rotary cover 44 discharge hole 45 fixed cover 46, 47 discharge port 50 fin 51 cleaning chamber 51a gas outlet 51b liquid outlet 53 liquid absorber 60 substrate holding mechanism 61 table 62 Slot 64 water outlet 65, shield cover 70 fixed cover 75 inner rotary cover 75a recess 80 support arm 85 fixed cover 100 outer casing 101a, 101b, 101c partition wall 102 loading and unloading portions 110, 111 > 112 '113' 114 shutter 120 Front loading unit 121 moving mechanism 122 first transfer robot 124 second transfer robot 130 polishing portion 130a A light transfer portion 131A First light transfer unit 130b Second polishing portion 131B Second light holding unit 131C Third polishing unit 40 320660 200922701 131D Fourth polishing unit 132A, 132B, 132C, 132D Polishing table 133A, 133B, 133C, 133D Top ring 134A, 134B, 134C, 134D polishing liquid supply nozzles 135A, 135B, 135C, 135D dresser 136A, 136B, 136C, 136D sprayer 137A, 137B, 137C, 137D top ring shaft 140 cleaning portion 14 151 reverse Machines 142 to 145 cleaning unit 146 transfer early 150 first linear carrier 152, 166 lift 153, 154, 155, 167, 168 pusher 160 second linear carrier 200 moving mechanism 201 loading and unloading portion 202 Transfer robot 204 wafer cassette 206 wafer station 208 transfer robot 210 rotary carrier 212 cleaning unit 214 cleaning unit 218 dresser 222 water tank 224 line thickness monitor (ITM) 230 polishing table 231 top ring 232 polishing liquid supply nozzle 250 Polishing unit TP1 First transfer position TP2 Second transfer position TP3 Second transfer position TP4 Fourth transfer position TP5 Fifth transfer position TP6 Sixth transfer Position TP7 seventh transfer position W substrate 320660 41