WO2016076303A1 - Substrate washing device - Google Patents

Substrate washing device Download PDF

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Publication number
WO2016076303A1
WO2016076303A1 PCT/JP2015/081570 JP2015081570W WO2016076303A1 WO 2016076303 A1 WO2016076303 A1 WO 2016076303A1 JP 2015081570 W JP2015081570 W JP 2015081570W WO 2016076303 A1 WO2016076303 A1 WO 2016076303A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
cover
cleaning
cleaning apparatus
rotating
Prior art date
Application number
PCT/JP2015/081570
Other languages
French (fr)
Japanese (ja)
Inventor
孝一 深谷
幸次 前田
知淳 石橋
央二郎 中野
Original Assignee
株式会社荏原製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2015218517A external-priority patent/JP6797526B2/en
Application filed by 株式会社荏原製作所 filed Critical 株式会社荏原製作所
Priority to KR1020177012422A priority Critical patent/KR102324564B1/en
Priority to CN201580061139.XA priority patent/CN107004593B/en
Priority to KR1020217036118A priority patent/KR102461262B1/en
Publication of WO2016076303A1 publication Critical patent/WO2016076303A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to a substrate cleaning apparatus for cleaning a substrate surface using a two-fluid jet.
  • a cleaning method using a two-fluid jet (2FJ) is known as a cleaning method for cleaning a substrate surface in a non-contact manner.
  • a minute droplet (mist) placed on a high-speed gas is ejected from a two-fluid nozzle toward the substrate surface to collide, and a shock wave generated by the collision of the droplet with the substrate surface is used. Particles and the like on the substrate surface are removed (cleaned) (see, for example, Patent Document 1).
  • the cover installed around the substrate is fixed.
  • the speed (flow velocity) of the liquid droplets ejected from the two-fluid nozzle is high, and the speed of the side jet (radial liquid droplet scattering speed) is also high (see FIG. 7).
  • the velocity Vo of a droplet ejected from a two-fluid nozzle is 250 to 350 m / sec
  • the side jet velocity Vf radial droplet scattering velocity
  • the droplet velocity Vo ejected from the two-fluid nozzle is 350 to 400 m / sec
  • the side jet velocity Vf (radial droplet scattering velocity) Is 700 to 1200 m / sec.
  • the speed of the side jet becomes very high, and there is a possibility that the liquid droplets colliding with the cover will rebound and reattach to the substrate surface.
  • the high-speed two-fluid cleaning or the ultra-high-speed two-fluid cleaning there is a high risk of reattachment to the substrate surface.
  • the present invention has been made in view of the above problems, and a substrate capable of suppressing the rebound of the droplet from the cover and preventing the droplet from reattaching to the surface of the substrate when performing two-fluid cleaning.
  • An object is to provide a cleaning device.
  • a substrate cleaning apparatus includes a substrate holding mechanism that holds a substrate, a substrate rotation mechanism that rotates a substrate held by the substrate holding mechanism, a two-fluid nozzle that jets a two-fluid jet toward the surface of the substrate, A cover disposed around the substrate and a cover rotation mechanism that rotates the cover are provided, and the cover rotation mechanism rotates the cover in the same rotation direction as the substrate.
  • the two-fluid cleaning causes the centrifugal force generated by the rotation of the substrate or the side jet generated by the two-fluid cleaning to scatter droplets on the surface of the substrate and collide with the cover, Since the substrate rotates in the same rotational direction as the substrate, the droplet collision speed can be reduced as compared with the case where the cover does not rotate. Thereby, the splash of the droplet from the cover can be suppressed, and the droplet can be prevented from reattaching to the surface of the substrate.
  • the substrate cleaning apparatus of the present invention includes a substrate holding mechanism for holding a substrate, a substrate rotating mechanism for rotating the substrate held by the substrate holding mechanism, a peristaltic cleaning mechanism for sliding and cleaning the surface of the substrate, and a substrate And a cover rotating mechanism that rotates the cover, and the cover rotating mechanism rotates the cover in the same rotation direction as the substrate.
  • the substrate cleaning apparatus of the present invention includes a substrate holding mechanism for holding a substrate, a substrate rotating mechanism for rotating the substrate held by the substrate holding mechanism, and an ultrasonic cleaning mechanism for cleaning the surface of the substrate using ultrasonic waves. And a cover disposed around the substrate, and a cover rotation mechanism that rotates the cover. The cover rotation mechanism rotates the cover in the same rotation direction as the substrate.
  • the cover rotation mechanism may rotate the cover at the same angular velocity as the substrate.
  • the radial distance A between the outer end of the substrate and the tip of the cover is set in a range of 2 mm to 80 mm
  • the distance B in the height direction between the substrate and the tip of the cover is
  • the distance C in the radial direction between the outer edge of the substrate and the inner peripheral surface of the cover may be set in the range of 2 mm to 80 mm.
  • the cover is disposed at an appropriate position with respect to the substrate, it is possible to suppress the splash of the droplet from the cover and to prevent the droplet from reattaching to the surface of the substrate. .
  • the radial distance A between the outer end of the substrate and the tip of the cover is set to 2 mm, and the distance B in the height direction between the substrate and the tip of the cover is set to 15 mm.
  • the radial distance C between the outer edge of the substrate and the inner peripheral surface of the cover may be set to 19 mm.
  • the cover is disposed at an optimal position with respect to the substrate, it is possible to suppress the splash of the droplet from the cover and to prevent the droplet from reattaching to the surface of the substrate. .
  • the two-fluid nozzle may be provided inclined at a predetermined angle so as to eject the two-fluid jet toward the upstream side in the rotation direction of the substrate.
  • the two-fluid jet is ejected from the two-fluid nozzle toward the upstream side in the rotation direction of the substrate (against the rotation of the substrate), the relative velocity of the two-fluid jet with respect to the rotating substrate is increased.
  • the cleaning performance can be improved.
  • the substrate cleaning apparatus of the present invention includes a casing that accommodates the substrate cleaning apparatus, a pair of gas inlets that allow gas to flow into the casing, and a lower part of the casing. And a pair of gas inflow ports may be provided on the opposing wall surfaces of the casing and disposed at a position higher than the substrate.
  • the substrate transfer area is provided adjacent to the upstream side and the downstream side of the substrate cleaning apparatus, respectively, and the gas inlet is blown from the blower unit in the substrate transfer area. Gas may be introduced into the casing.
  • a gas supply line for supplying gas into the casing may be connected to the gas inlet.
  • the two-fluid nozzle may be composed of a conductive member.
  • the tip portion of the two-fluid nozzle is made of a conductive member, the charge amount of the droplets ejected from the two-fluid nozzle can be suppressed. As a result, the amount of charge on the substrate surface due to the two-fluid cleaning can be suppressed, and a defect caused by the charged particles adhering to the substrate can be suppressed.
  • the substrate cleaning apparatus of the present invention may include a chemical solution supply nozzle that supplies a conductive chemical solution to the substrate.
  • the chemical solution having conductivity is supplied from the chemical solution supply nozzle, the amount of charge on the substrate surface can be suppressed.
  • the amount of charge on the substrate surface due to the two-fluid cleaning can be suppressed, and a defect caused by the charged particles adhering to the substrate can be suppressed.
  • the splash of the droplet from the cover can be suppressed, and the droplet can be prevented from reattaching to the surface of the substrate.
  • FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus provided with a substrate cleaning apparatus (substrate cleaning unit) according to the present embodiment.
  • the substrate processing apparatus includes a substantially rectangular housing 10 and a load port 12 on which a substrate cassette for stocking substrates such as a number of semiconductor wafers is placed.
  • the load port 12 is disposed adjacent to the housing 10.
  • the load port 12 can be equipped with an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Unified Pod).
  • SMIF and FOUP are sealed containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering with a partition wall.
  • polishing units 14a to 14d Inside the housing 10 are a plurality (four in the example of FIG. 1) of polishing units 14a to 14d, a first cleaning unit 16 and a second cleaning unit 18 for cleaning the polished substrate, and a cleaned substrate.
  • a drying unit 20 for drying is accommodated.
  • the polishing units 14a to 14d are arranged along the longitudinal direction of the substrate processing apparatus, and the cleaning units 16, 18 and the drying unit 20 are also arranged along the longitudinal direction of the substrate processing apparatus.
  • the substrate cleaning apparatus of the present invention is applied to the second cleaning unit 18.
  • a first substrate transfer robot 22 is disposed in a region surrounded by the funnel port 12, the polishing unit 14 a located on the funnel port 12 side, and the drying unit 20.
  • a substrate transport unit 24 is disposed in parallel with the polishing units 14a to 14d.
  • the first substrate transfer robot 22 receives the substrate before polishing from the funnel port 12 and delivers it to the substrate transfer unit 24, and receives the dried substrate from the drying unit 20 and returns it to the funnel port 12.
  • the substrate transport unit 24 transports the substrate received from the first substrate transport robot 22 and delivers the substrate to and from each of the polishing units 14a to 14d.
  • a second substrate transfer robot 26 that transfers substrates between these units 16 and 18 is disposed.
  • a third substrate transport robot 28 is disposed between the second cleaning unit 18 and the drying unit 20 to transfer substrates between these units 18 and 20.
  • control unit 30 that controls the movement of each device of the substrate processing apparatus is disposed inside the housing 10.
  • the control unit 30 also has a function of controlling the movement of the second cleaning unit (substrate cleaning apparatus) 18.
  • a roll cleaning unit is used as the first cleaning unit 16 to clean the substrate by rubbing roll cleaning members extending in a roll shape on both the front and back surfaces of the substrate in the presence of the cleaning liquid.
  • the first cleaning unit (roll cleaning unit) 16 is configured to use in combination with megasonic cleaning in which ultrasonic waves of about 1 MHz are applied to the cleaning liquid and the action force due to the vibration acceleration of the cleaning liquid is applied to the fine particles adhering to the substrate surface. ing.
  • the substrate cleaning apparatus of the present invention is used as the second cleaning unit 18.
  • a spin drying unit is used that holds a substrate, blows IPA vapor from a moving nozzle to dry the substrate, rotates the substrate at a high speed, and dries the substrate by centrifugal force.
  • the cleaning unit may have a two-stage structure in which the cleaning units 16 and 18 are arranged in two upper and lower stages. In this case, the cleaning unit has upper and lower two-stage substrate processing units.
  • FIG. 2 is a perspective view of the substrate cleaning apparatus (substrate cleaning unit) in the present embodiment
  • FIG. 3 is a plan view of the substrate cleaning apparatus (substrate cleaning unit) in the present embodiment.
  • the substrate cleaning apparatus (second cleaning unit) 18 of the present embodiment is erected on the cleaning tank 40 surrounding the substrate W and on the side of the processing tank 40.
  • a rotatable support shaft 42 and a horizontally extending swinging arm 44 having a base connected to the upper end of the support shaft 42 are provided.
  • the substrate W is held by a chuck or the like and is rotated by rotation of the chuck or the like.
  • a fluid nozzle (two-fluid nozzle) 46 is attached to the free end (tip) of the swing arm 44 so as to be movable up and down.
  • a carrier gas supply line 50 that supplies a carrier gas such as N 2 gas and a cleaning liquid supply line 52 that supplies a cleaning liquid such as pure water or CO 2 gas-dissolved water are connected to the fluid nozzle 46.
  • a carrier gas such as N 2 gas and a cleaning liquid such as pure water or CO 2 gas-dissolved water supplied from the fluid nozzle 46 are ejected from the fluid nozzle 46 at a high speed, so that the cleaning liquid is made into fine droplets (mist) in the carrier gas.
  • An existing two-fluid jet stream is generated. The two-fluid jet generated by the fluid nozzle 46 is ejected toward the surface of the rotating substrate W and collides with it, so that the substrate surface using the shock wave generated by the collision of the microdroplet with the substrate surface is used. Particles and the like can be removed (cleaned).
  • the support shaft 42 is connected to a motor 54 as a drive mechanism for rotating the swing arm 44 about the support shaft 42 by rotating the support shaft 42.
  • a pencil type cleaning tool 60 made of, for example, PVA sponge is attached to the tip of the swing arm 44 so as to be movable up and down and rotatable. Further, a rinsing liquid supply nozzle 62 for supplying a rinsing liquid and a chemical liquid supply nozzle 64 for supplying a chemical liquid are disposed on the surface of the rotating substrate W held by a chuck or the like, which is positioned above the cleaning tank 40. Has been. While the lower end of the pencil-type cleaning tool 60 is brought into contact with the surface of the rotating substrate W with a predetermined pressing force, the pencil-type cleaning tool 60 is moved by the swinging of the swinging arm 44 and at the same time on the surface of the substrate W. By supplying the rinse liquid or the chemical liquid, the contact cleaning of the surface of the substrate W is performed. The contact cleaning of the surface of the substrate W is a process performed as necessary, and is not necessarily required.
  • FIG. 3 shows a state in which the fluid nozzle 46 is located above the displacement point B.
  • FIG. 4 is a side view of the substrate cleaning apparatus (substrate cleaning unit).
  • the substrate cleaning apparatus includes a substrate holding mechanism 1 that horizontally holds the substrate W, a motor (rotating mechanism) 2 that rotates the substrate W around its central axis via the substrate holding mechanism 1, A rotating cover 3 is provided around the substrate W.
  • the substrate holding mechanism 1 includes a plurality of chucks 70 that grip the peripheral edge of the substrate W, a circular pedestal 71 to which the chucks 70 are fixed, a stage 72 that supports the pedestal 71, and a hollow that supports the stage 72.
  • the support shaft 73 has a shape. In this case, the pedestal 71, the stage 72, and the support shaft 73 are arranged coaxially.
  • the rotary cover 3 is fixed to the end of the stage 72, and the stage 72 and the rotary cover are also arranged coaxially. Further, the substrate W held by the chuck 70 and the rotary cover 3 are located on the same axis.
  • the motor 2 is connected to the outer peripheral surface of the support shaft 73.
  • the torque of the motor 2 is transmitted to the support shaft 73, whereby the substrate W held on the chuck 70 is rotated.
  • the substrate W and the rotating cover rotate together, and the relative speed between them is zero. There may be a slight speed difference between the substrate W and the rotary cover 3.
  • the substrate W and the rotation cover 3 can be rotated by the same rotation mechanism (motor 2).
  • the substrate W and the rotation cover 3 can be rotated at the same speed.
  • Rotating the substrate W and the rotating cover 3 at the same speed means rotating the substrate W and the rotating cover 3 in the same direction at the same angular velocity, and does not include rotating in the opposite directions.
  • This rotation mechanism (motor 2) corresponds to the substrate rotation mechanism and the cover rotation mechanism of the present invention.
  • the stage 72 has a plurality of discharge holes 74.
  • the discharge hole 74 is, for example, a long hole that extends in the circumferential direction of the rotary cover 3.
  • the cleaning liquid supplied from the fluid nozzle 46 is discharged through the discharge hole 74 together with the carrier gas and the ambient atmosphere (usually air).
  • the displacement is controlled in the range of 1 to 3 m 3 / min.
  • the atmosphere in the substrate cleaning apparatus substrate cleaning unit
  • a fixed cover 75 is provided outside the rotary cover 3. The fixed cover 75 is configured not to rotate.
  • FIG. 5 is an explanatory diagram of a main part of the substrate cleaning apparatus (substrate cleaning unit).
  • the radial distance A between the outer edge of the substrate and the tip of the rotary cover is set in a range of 2 mm to 80 mm, and the distance B in the height direction between the substrate and the tip of the rotary cover is 3 mm.
  • the distance C in the radial direction between the outer edge of the substrate and the inner peripheral surface of the rotary cover is preferably set in the range of 2 mm to 80 mm.
  • the radial distance A between the outer edge of the substrate and the tip of the rotating cover is set to 2 mm
  • the distance B in the height direction between the substrate and the tip of the rotating cover is set to 15 mm.
  • the radial distance C between the rotary cover and the inner peripheral surface of the rotary cover is set to 19 mm.
  • the surface of the substrate taken out from the substrate cassette in the load port 12 is conveyed to one of the polishing units 14a to 14d and polished.
  • the polished substrate surface is cleaned by a first cleaning unit (roll cleaning unit) 16 and further cleaned by a second cleaning unit (substrate cleaning unit) 18 using a two-fluid jet flow.
  • the two-fluid jet is ejected toward the surface of the rotating substrate W while controlling the moving speed of the fluid nozzle 46.
  • the rinsing liquid is supplied from the rinsing liquid supply nozzle 62 to the substrate surface for several seconds (for example, 3 seconds) while rotating the substrate that has been roll cleaned by the first cleaning unit 16 and carried into the second cleaning unit 18. Then, the substrate surface is rinsed, and the substrate surface is pencil-cleaned by scanning the pencil-type cleaning tool 60 a predetermined number of times (for example, 2 to 3 times) while spraying the chemical solution from the chemical solution supply nozzle 64 to the substrate surface. In the same second cleaning unit 18, the cleaning using the two-fluid jet is started immediately.
  • the cleaning of the substrate surface using the two-fluid jet flow is performed by oscillating the swing arm 44 a predetermined number of times (for example, 1 to 4 times) and rotating the fluid nozzle 46 ejecting the two-fluid jet flow. This is done by moving the upper part of the.
  • the angular speed of the swing arm 44 that is, the moving speed of the fluid nozzle 46 is calculated from the time and number of times allowed for processing.
  • the rotation speed of the substrate when the substrate surface is cleaned using the two-fluid jet flow and the rotation speed of the substrate when the substrate surface is cleaned using the pencil type cleaning tool 60 are not necessarily matched. There is no need.
  • the substrate after cleaning is taken out from the second cleaning unit 18, carried into the drying unit 20 and spin-dried, and then the substrate after drying is returned into the substrate cassette of the load port 12.
  • the liquid droplets on the surface of the substrate are scattered by the centrifugal force generated by the rotation of the substrate and the side jet generated by the two-fluid cleaning to form the rotating cover. Even if a collision occurs, the rotating cover rotates in the same rotation direction as the substrate, so that the droplet collision speed can be reduced as compared with the case where the cover does not rotate. Thereby, the splash of the droplet from the rotating cover can be suppressed, and the droplet can be prevented from reattaching to the surface of the substrate.
  • the droplet collision speed is compared to when the rotating cover is rotating at an angular velocity different from that of the substrate (for example, when the cover is not rotating). Can be reduced.
  • the droplets that collide with the cover may splash on the substrate against the airflow.
  • the droplet (droplet colliding with the cover at a small relative speed) can be guided from the lower part by riding on the air current.
  • r 1 is the radius of the substrate W
  • r 2 is the radius of the inner peripheral surface of the rotary cover.
  • ⁇ is an angular velocity between the substrate W and the rotary cover.
  • the rotation cover is arranged at an optimal position with respect to the substrate W, the splash of the droplet from the rotation cover can be suppressed, and the droplet is transferred to the substrate. Can be prevented from re-adhering to the surface.
  • both the fluid nozzle (two-fluid nozzle) 46 and the pencil type cleaning tool 60 are provided at the tip of the peristaltic arm 44 .
  • the substrate cleaning apparatus 18 may be provided with an ultrasonic cleaner 90 that cleans the surface of the substrate W using ultrasonic waves.
  • the fluid nozzle (two-fluid nozzle) 46 may be provided at the outer peripheral position (edge position) of the substrate.
  • the surface of the outer periphery (edge) of the substrate can be cleaned by the fluid nozzle (two fluid nozzle) 46.
  • a local exhaust mechanism 80 may be provided in the vicinity of the fluid nozzle (two-fluid nozzle) 46.
  • exhaust at the outer peripheral position (edge position) of the substrate can be enhanced, and scattering of droplets can be suppressed.
  • the local exhaust mechanism 80 is not always necessary. That is, the local exhaust mechanism 80 may not be provided.
  • the two-fluid nozzle 46 may be provided to be inclined at a predetermined angle so as to eject the two-fluid jet toward the upstream side in the rotation direction of the substrate W.
  • the two-fluid nozzle 46 can be provided so as to be inclined in an angle range of 0 ° to 90 ° with the rotation direction (tangential direction) toward the upstream side in the rotation direction of the substrate W in plan view.
  • the two-fluid nozzle 46 is provided at an angle of 0 ° with the rotation direction (tangential direction) toward the upstream side in the rotation direction of the substrate W.
  • the two-fluid nozzle 46 is provided at an angle of 90 ° with the rotation direction (tangential direction) of the substrate W. In this case, the relative speed of the two-fluid jet with respect to the rotating substrate does not decrease, and the cleaning performance can be maintained (without decreasing).
  • the two-fluid nozzle 46 can be provided so as to be inclined in an angle range of 45 ° to 90 ° with the rotation direction toward the upstream side in the rotation direction of the substrate W in a side view.
  • the two-fluid nozzle 46 can be provided inclined toward the upstream side in the rotation direction of the substrate W in an angle range of 45 ° to 90 ° with the substrate surface in a side view.
  • the two-fluid nozzle 46 is provided at an angle of 45 ° with the rotation direction (substrate surface) toward the upstream side in the rotation direction of the substrate W.
  • the relative speed of the two-fluid jet with respect to the rotating substrate is increased, and the cleaning performance can be improved.
  • the two-fluid nozzle 46 is provided at an angle of 90 ° with the rotation direction (substrate surface) of the substrate W. In this case, the relative speed of the two-fluid jet with respect to the rotating substrate does not decrease, and the cleaning performance can be maintained (without decreasing).
  • FIG. 14 and 15 show a substrate cleaning apparatus having an airflow improvement function.
  • the substrate cleaning device 18 is accommodated in a casing 80, and a pair of ventilation plates 81 are provided on the upper surface of the wall surface of the casing 80.
  • the ventilation plate 81 is disposed at a position higher than the substrate W (upper side in FIG. 14).
  • a substrate transfer area 82 of the second substrate transfer robot 26 is provided adjacent to the upstream side of the substrate cleaning device 18 (left side in FIG. 14), and on the downstream side (right side in FIG. 14) of the substrate cleaning device 18. Are provided adjacent to a substrate transfer area 83 of the third substrate transfer robot 28.
  • a blower unit 84 is provided above each of the substrate transfer areas 82 and 83, and a gas inlet 85 that introduces gas blown from the blower unit 84 into the casing 80 is provided in the ventilation plate 81. It has been.
  • the blower unit 84 for example, an FFU (fan filter unit) that sucks air with a fan and cleans it with a filter may be adopted.
  • FFU fan filter unit
  • a gas discharge port 86 for discharging the gas inside the casing 80 to the outside is provided at the lower part of the casing 80. The gas discharge port 86 may be the discharge hole 74 described above.
  • the gas is discharged to the outside through a gas discharge port 86 at the bottom of the casing 80. At this time, droplets and mist inside the casing 80 are also discharged to the outside through the gas discharge port 86 at the bottom of the casing 80 along the descending airflow.
  • the gas supply port 88 of the gas supply line 87 is connected to the ventilation plate 81, and the gas (for example, N 2 gas) supplied from the gas supply line 87 is supplied into the casing 80 from the gas inlet 85. Is done.
  • the gas supply line 87 is provided with a valve 89, and the gas supply can be controlled on / off. For example, the gas supply is turned on (started) at the timing when the substrate W is transferred into the casing 80, and the gas supply is turned off at the timing when the substrate W is transferred from the casing to the outside after the cleaning of the substrate W ( Stop).
  • FIG. 18 shows a substrate cleaning apparatus provided with charging suppression.
  • the substrate cleaning apparatus 18 includes a chemical solution supply nozzle 64 that supplies a conductive chemical solution to the substrate W, and a rinse supply nozzle 62 that supplies a rinse solution (for example, pure water) to the substrate W.
  • a chemical solution having conductivity is supplied from the chemical solution supply nozzle 64 to the surface of the substrate W (see FIG. 18A), and then from the two-fluid nozzle 46.
  • a two-fluid cleaning is performed on the substrate W by ejecting a two-fluid jet (see FIG. 18B).
  • the rinse liquid is supplied from the rinse supply nozzle 62 to the surface of the substrate W, and the chemical liquid is washed away (see FIG. 18C).
  • the chemical solution having conductivity is supplied from the chemical solution supply nozzle 64, the amount of charge on the surface of the substrate W can be suppressed.
  • the amount of charge on the substrate surface due to the two-fluid cleaning can be suppressed, and contamination and defects caused by the charged particles adhering to the substrate W can be suppressed.
  • the two-fluid nozzle 46 may be formed of a conductive member (for example, conductive PEEK). Even with such a configuration, the charge amount of the droplets ejected from the two-fluid nozzle 46 can be suppressed. Accordingly, the amount of charge on the substrate surface due to the two-fluid cleaning can be suppressed, and contamination and defects caused by the charged particles adhering to the substrate W can be suppressed.
  • a conductive member for example, conductive PEEK
  • the carrier gas (N 2 gas or the like) has a larger flow velocity than the cleaning liquid such as CO 2 gas-dissolved water, and therefore, the carrier gas supply line for the carrier gas (N 2 gas or the like) compared to the cleaning liquid supply line 52. 50 is easier to be charged. Therefore, a conductive member is used not only for the two-fluid nozzle 46 but also for a member that forms the carrier gas supply line 50 connected to the two-fluid nozzle 46, and the carrier gas supply line 50 is grounded at the point where it comes out of the casing 80. By connecting the conductive wire 101 to the carrier gas supply line 50 so as to be grounded, charging can be effectively prevented (see FIG. 18A).
  • the chemical supply nozzle 64 is not necessarily provided (in this case, the rinse supply nozzle 62 may not be provided). it can). Further, when a cleaning unit for cleaning the substrate W with the rinsing liquid is provided downstream from the substrate cleaning apparatus 18, the chemical supply nozzle 64 is provided, but the rinsing supply nozzle 62 is not necessarily provided. Also good.
  • the above-described airflow improvement function (see FIGS. 14 to 17) of the substrate cleaning apparatus of the present invention is not limited to the substrate cleaning apparatus using the two-fluid nozzle, but also the oscillating cleaning of a pencil type cleaning tool or the like. It can also be applied to a substrate cleaning apparatus using a mechanism or an ultrasonic cleaning mechanism.
  • the two-fluid nozzle and the carrier gas supply line formed of the conductive member as described above are not only the substrate cleaning apparatus having the rotatable cover described in this embodiment, but also the substrate having the fixed cover. It can also be applied to a cleaning device.
  • the substrate cleaning apparatus according to the present invention has an effect that, when performing two-fluid cleaning, it is possible to suppress the splash of the droplet from the cover and prevent the droplet from reattaching to the surface of the substrate. It is useful for cleaning semiconductor wafers and the like.
  • Substrate holding mechanism 2.
  • Motor (substrate rotation mechanism, cover rotation mechanism) 3 Rotating Cover 10 Housing 12 Load Port 14a-14d Polishing Unit 16 First Cleaning Unit 18 Second Cleaning Unit (Substrate Cleaning Device) 20 Drying Unit 22 First Substrate Transfer Robot 24 Substrate Transfer Unit 26 Second Substrate Transfer Robot 28 Third Substrate Transfer Robot 30 Control Unit 40
  • Cleaning Tank 42
  • Support Shaft 44
  • Oscillating Arm 46 Fluid Nozzle (Two Fluid Nozzle)
  • Carrier gas supply line 52
  • Cleaning liquid supply line 54
  • Motor 60 Pencil type cleaning tool 62 Rinse liquid supply nozzle 64 Chemical liquid supply nozzle 70 Chuck 71 Base 72 Stage 73 Support shaft 74 Discharge hole 75
  • Fixed cover 80 Casing 81 Ventilation plate 82
  • Substrate conveyance area 83
  • Substrate transfer area 84
  • Blower unit 85
  • Gas inlet 86
  • Gas outlet 87
  • Gas supply line 88
  • Valve 90 90 Ultras

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Abstract

Provided is a substrate washing device such that, when two-fluid washing is performed, bouncing of droplets from a cover is suppressed, whereby the droplets can be prevented from reattaching to a substrate surface. A substrate washing device (18) is provided with: a substrate holding mechanism (1) for holding a substrate W; a substrate rotation mechanism (2) for rotating the substrate W being held by the substrate holding mechanism (1); a two-fluid nozzle (46) that ejects a two-fluid jet toward a surface of the substrate W; a cover disposed around the substrate; and a cover rotation mechanism for rotating the cover. The cover rotation mechanism rotates the cover in the same rotation direction as the substrate.

Description

基板洗浄装置Substrate cleaning device
　本発明は、２流体ジェットを用いて基板表面を洗浄する基板洗浄装置に関する。 The present invention relates to a substrate cleaning apparatus for cleaning a substrate surface using a two-fluid jet.
　従来から、基板表面を非接触で洗浄する洗浄方法として、２流体ジェット（２ＦＪ）を使用した洗浄方法が知られている。この洗浄方法では、高速気体に乗せた微小な液滴（ミスト）を２流体ノズルから基板表面に向けて噴出させて衝突させ、この液滴の基板表面への衝突で発生した衝撃波を利用して基板表面のパーティクル等を除去（洗浄）する（例えば特許文献１参照）。 Conventionally, a cleaning method using a two-fluid jet (2FJ) is known as a cleaning method for cleaning a substrate surface in a non-contact manner. In this cleaning method, a minute droplet (mist) placed on a high-speed gas is ejected from a two-fluid nozzle toward the substrate surface to collide, and a shock wave generated by the collision of the droplet with the substrate surface is used. Particles and the like on the substrate surface are removed (cleaned) (see, for example, Patent Document 1).
　ところが２流体洗浄では、２流体ジェットを基板の表面に衝突させて基板の表面の微少パーティクルを除去するときに、回転する基板の遠心力や２流体洗浄のサイドジェットにより基板表面の液滴が周囲に飛散する。飛散した液滴が洗浄モジュールの外壁に付着すると、洗浄モジュール内の汚染や基板への再付着につながるおそれがある。そこで、従来の装置では、液滴の飛散を抑制するために、回転する基板の周囲にカバーを設置し、外壁に向けて飛散する液滴をカバーで受け止め、カバーの下部から装置外部へ排出し、基板への再付着を防止して、ディフェクト（Defect）を抑制していた。 However, in the two-fluid cleaning, when the two-fluid jet collides with the surface of the substrate to remove minute particles on the surface of the substrate, droplets on the surface of the substrate are surrounded by the centrifugal force of the rotating substrate or the side jet of the two-fluid cleaning. Scatter. If the splashed droplets adhere to the outer wall of the cleaning module, there is a risk of contamination in the cleaning module and reattachment to the substrate. Therefore, in the conventional device, in order to suppress the scattering of the droplets, a cover is installed around the rotating substrate, the droplets scattered toward the outer wall are received by the cover, and discharged from the lower part of the cover to the outside of the device. , Preventing reattachment to the substrate and suppressing defects.
特開２００５－２９４８１９号公報JP 2005-294819 A
　しかしながら、従来の装置では、基板の周囲に設置されるカバーが固定されていた。２流体洗浄では、２流体ノズルから噴出させる液滴の速度（流速）が高速であり、サイドジェットの速度（径方向の液滴の飛散速度）も高速である（図７参照）。例えば、一般的な２流体洗浄では、２流体ノズルから噴出させる液滴の速度Ｖｏは、２５０～３５０ｍ／秒であり、サイドジェットの速度Ｖｆ（径方向の液滴の飛散速度）は、３００～４００ｍ／秒である。さらに、高速２流体洗浄あるいは超高速２流体洗浄では、２流体ノズルから噴出させる液滴の速度Ｖｏは、３５０～４００ｍ／秒であり、サイドジェットの速度Ｖｆ（径方向の液滴の飛散速度）は、７００～１２００ｍ／秒である。 However, in the conventional apparatus, the cover installed around the substrate is fixed. In the two-fluid cleaning, the speed (flow velocity) of the liquid droplets ejected from the two-fluid nozzle is high, and the speed of the side jet (radial liquid droplet scattering speed) is also high (see FIG. 7). For example, in a general two-fluid cleaning, the velocity Vo of a droplet ejected from a two-fluid nozzle is 250 to 350 m / sec, and the side jet velocity Vf (radial droplet scattering velocity) is 300 to 400 m / sec. Furthermore, in the high-speed two-fluid cleaning or the super-high-speed two-fluid cleaning, the droplet velocity Vo ejected from the two-fluid nozzle is 350 to 400 m / sec, and the side jet velocity Vf (radial droplet scattering velocity) Is 700 to 1200 m / sec.
　このように２流体洗浄では、サイドジェットの速度（径方向の液滴の飛散速度）が非常に高くなり、カバーに衝突した液滴が跳ね返って基板表面に再付着するおそれがある。特に、高速２流体洗浄あるいは超高速２流体洗浄では、基板表面に再付着するおそれが高くなる。 As described above, in the two-fluid cleaning, the speed of the side jet (radial liquid droplet scattering speed) becomes very high, and there is a possibility that the liquid droplets colliding with the cover will rebound and reattach to the substrate surface. In particular, in the high-speed two-fluid cleaning or the ultra-high-speed two-fluid cleaning, there is a high risk of reattachment to the substrate surface.
　本発明は、上記の課題に鑑みてなされたもので、２流体洗浄を行うときに、カバーからの液滴の跳ね返りを抑え、液滴が基板の表面に再付着するのを防ぐことのできる基板洗浄装置を提供することを目的とする。 The present invention has been made in view of the above problems, and a substrate capable of suppressing the rebound of the droplet from the cover and preventing the droplet from reattaching to the surface of the substrate when performing two-fluid cleaning. An object is to provide a cleaning device.
　本発明の基板洗浄装置は、基板を保持する基板保持機構と、基板保持機構に保持された基板を回転させる基板回転機構と、基板の表面に向けて２流体ジェットを噴出させる２流体ノズルと、基板の周囲に配置されるカバーと、カバーを回転させるカバー回転機構と、を備え、カバー回転機構は、基板と同一の回転方向にカバーを回転させる。 A substrate cleaning apparatus according to the present invention includes a substrate holding mechanism that holds a substrate, a substrate rotation mechanism that rotates a substrate held by the substrate holding mechanism, a two-fluid nozzle that jets a two-fluid jet toward the surface of the substrate, A cover disposed around the substrate and a cover rotation mechanism that rotates the cover are provided, and the cover rotation mechanism rotates the cover in the same rotation direction as the substrate.
　この構成によれば、２流体洗浄の際に、基板の回転により発生する遠心力や２流体洗浄で発生するサイドジェットにより基板の表面の液滴が飛散してカバーに衝突しても、カバーが基板と同一の回転方向に回転しているので、カバーが回転していない場合に比べて液滴の衝突速度を低減させることができる。これにより、カバーからの液滴の跳ね返りを抑えることができ、液滴が基板の表面に再付着するのを防ぐことができる。 According to this configuration, even when the two-fluid cleaning causes the centrifugal force generated by the rotation of the substrate or the side jet generated by the two-fluid cleaning to scatter droplets on the surface of the substrate and collide with the cover, Since the substrate rotates in the same rotational direction as the substrate, the droplet collision speed can be reduced as compared with the case where the cover does not rotate. Thereby, the splash of the droplet from the cover can be suppressed, and the droplet can be prevented from reattaching to the surface of the substrate.
　また、本発明の基板洗浄装置は、基板を保持する基板保持機構と、基板保持機構に保持された基板を回転させる基板回転機構と、基板の表面を搖動して洗浄する搖動洗浄機構と、基板の周囲に配置されるカバーと、カバーを回転させるカバー回転機構と、を備え、カバー回転機構は、基板と同一の回転方向にカバーを回転させる。 In addition, the substrate cleaning apparatus of the present invention includes a substrate holding mechanism for holding a substrate, a substrate rotating mechanism for rotating the substrate held by the substrate holding mechanism, a peristaltic cleaning mechanism for sliding and cleaning the surface of the substrate, and a substrate And a cover rotating mechanism that rotates the cover, and the cover rotating mechanism rotates the cover in the same rotation direction as the substrate.
　この構成によれば、揺動洗浄の際に供給される大流量のリンス水が基板の回転により発生する遠心力により基板の表面から液滴となって飛散してカバーに衝突しても、カバーが基板と同一の回転方向に回転しているので、カバーが回転していない場合に比べて液滴の衝突速度を低減させることができる。これにより、カバーからの液滴の跳ね返りを抑えることができ、液滴が基板の表面に再付着するのを防ぐことができる。 According to this configuration, even if a large flow of rinsing water supplied at the time of oscillating cleaning scatters as droplets from the surface of the substrate due to centrifugal force generated by the rotation of the substrate and collides with the cover, Is rotating in the same rotation direction as the substrate, the droplet collision speed can be reduced compared to when the cover is not rotating. Thereby, the splash of the droplet from the cover can be suppressed, and the droplet can be prevented from reattaching to the surface of the substrate.
　また、本発明の基板洗浄装置は、基板を保持する基板保持機構と、基板保持機構に保持された基板を回転させる基板回転機構と、基板の表面を超音波を用いて洗浄する超音波洗浄機構と、基板の周囲に配置されるカバーと、カバーを回転させるカバー回転機構と、を備え、カバー回転機構は、基板と同一の回転方向にカバーを回転させる。 Further, the substrate cleaning apparatus of the present invention includes a substrate holding mechanism for holding a substrate, a substrate rotating mechanism for rotating the substrate held by the substrate holding mechanism, and an ultrasonic cleaning mechanism for cleaning the surface of the substrate using ultrasonic waves. And a cover disposed around the substrate, and a cover rotation mechanism that rotates the cover. The cover rotation mechanism rotates the cover in the same rotation direction as the substrate.
　この構成によれば、超音波洗浄の際に供給される大流量のリンス水が基板の回転により発生する遠心力により基板の表面から液滴となって飛散してカバーに衝突しても、カバーが基板と同一の回転方向に回転しているので、カバーが回転していない場合に比べて液滴の衝突速度を低減させることができる。これにより、カバーからの液滴の跳ね返りを抑えることができ、液滴が基板の表面に再付着するのを防ぐことができる。 According to this configuration, even if a large flow of rinsing water supplied during ultrasonic cleaning scatters as droplets from the surface of the substrate due to the centrifugal force generated by the rotation of the substrate and collides with the cover, Is rotating in the same rotation direction as the substrate, the droplet collision speed can be reduced compared to when the cover is not rotating. Thereby, the splash of the droplet from the cover can be suppressed, and the droplet can be prevented from reattaching to the surface of the substrate.
　また、本発明の基板洗浄装置では、カバー回転機構は、基板と同一の角速度でカバーを回転させてもよい。 In the substrate cleaning apparatus of the present invention, the cover rotation mechanism may rotate the cover at the same angular velocity as the substrate.
　この構成によれば、カバーが基板と同一の角速度で回転しているので、カバーが基板と異なる角速度で回転している場合（例えば、カバーが回転していない場合）に比べて液滴の衝突速度を低減させることができる。 According to this configuration, since the cover rotates at the same angular velocity as the substrate, the liquid droplets collide compared to when the cover rotates at an angular velocity different from that of the substrate (for example, when the cover does not rotate). Speed can be reduced.
　また、本発明の基板洗浄装置では、基板の外端とカバーの先端との径方向の距離Ａは、２ｍｍ～８０ｍｍの範囲に設定され、基板とカバーの先端との高さ方向の距離Ｂは、３ｍｍ～５０ｍｍの範囲に設定され、基板の外端とカバーの内周面との径方向の距離Ｃは、２ｍｍ～８０ｍｍの範囲に設定されてもよい。 In the substrate cleaning apparatus of the present invention, the radial distance A between the outer end of the substrate and the tip of the cover is set in a range of 2 mm to 80 mm, and the distance B in the height direction between the substrate and the tip of the cover is The distance C in the radial direction between the outer edge of the substrate and the inner peripheral surface of the cover may be set in the range of 2 mm to 80 mm.
　この構成によれば、基板に対してカバーが適切な位置に配置されるため、カバーからの液滴の跳ね返りを抑えることができ、液滴が基板の表面に再付着するのを防ぐことができる。 According to this configuration, since the cover is disposed at an appropriate position with respect to the substrate, it is possible to suppress the splash of the droplet from the cover and to prevent the droplet from reattaching to the surface of the substrate. .
　また、本発明の基板洗浄装置では、基板の外端とカバーの先端との径方向の距離Ａは、２ｍｍに設定され、基板とカバーの先端との高さ方向の距離Ｂは、１５ｍｍに設定され、基板の外端とカバーの内周面との径方向の距離Ｃは、１９ｍｍに設定されてもよい。 In the substrate cleaning apparatus of the present invention, the radial distance A between the outer end of the substrate and the tip of the cover is set to 2 mm, and the distance B in the height direction between the substrate and the tip of the cover is set to 15 mm. The radial distance C between the outer edge of the substrate and the inner peripheral surface of the cover may be set to 19 mm.
　この構成によれば、基板に対してカバーが最適な位置に配置されるため、カバーからの液滴の跳ね返りを抑えることができ、液滴が基板の表面に再付着するのを防ぐことができる。 According to this configuration, since the cover is disposed at an optimal position with respect to the substrate, it is possible to suppress the splash of the droplet from the cover and to prevent the droplet from reattaching to the surface of the substrate. .
　また、本発明の基板洗浄装置では、２流体ノズルは、基板の回転方向の上流側に向けて２流体ジェットを噴出するように、所定角度で傾けて設けられてもよい。 In the substrate cleaning apparatus of the present invention, the two-fluid nozzle may be provided inclined at a predetermined angle so as to eject the two-fluid jet toward the upstream side in the rotation direction of the substrate.
　この構成によれば、２流体ノズルから基板の回転方向の上流側に向けて（基板の回転に抗して）２流体ジェットが噴出されるので、回転する基板に対する２流体ジェットの相対速度が上昇し、洗浄性能を向上させることができる。 According to this configuration, since the two-fluid jet is ejected from the two-fluid nozzle toward the upstream side in the rotation direction of the substrate (against the rotation of the substrate), the relative velocity of the two-fluid jet with respect to the rotating substrate is increased. In addition, the cleaning performance can be improved.
　また、本発明の基板洗浄装置は、基板洗浄装置を収容するケーシングと、ケーシングの壁面に設けられ、ケーシング内に気体を流入させる一対の気体流入口と、ケーシングの下部に設けられ、ケーシング内の気体を排出する気体排出口と、を備え、一対の気体流入口は、ケーシングの対向する壁面に設けられ、基板より高い位置に配置されてもよい。 Further, the substrate cleaning apparatus of the present invention includes a casing that accommodates the substrate cleaning apparatus, a pair of gas inlets that allow gas to flow into the casing, and a lower part of the casing. And a pair of gas inflow ports may be provided on the opposing wall surfaces of the casing and disposed at a position higher than the substrate.
　この構成によれば、ケーシングの対向する壁面に設けられた一対の気体流入口からケーシング内に気体が流入する。一対の気体流入口は基板より高い位置に配置されているので、一対の気体流入口から流入した気体は、ケーシング内の中央部において基板の上方でぶつかって、下降気流が形成され、ケーシングの下部の気体排出口から排出される。このとき。ケーシング内の液滴やミストも、下降気流にのってケーシングの下部の気体排出口から排出される。これにより、ケーシング内に液滴やミストが蔓延するのを抑制することができ、液滴やミストの再付着によるディフェクト（Defect）を抑制することができる。 According to this configuration, gas flows into the casing from the pair of gas inlets provided on the opposite wall surfaces of the casing. Since the pair of gas inlets are arranged at a position higher than the substrate, the gas flowing in from the pair of gas inlets collides with the upper part of the substrate in the central part of the casing to form a downward airflow, and the lower part of the casing It is discharged from the gas outlet. At this time. Droplets and mist in the casing are also discharged from the gas outlet at the bottom of the casing along the descending airflow. Thereby, it can suppress that a droplet and mist spread in a casing, and the defect (Defect) by reattachment of a droplet or mist can be suppressed.
　また、本発明の基板洗浄装置は、基板洗浄装置の上流側および下流側には、それぞれ基板搬送エリアが隣接して設けられており、気体流入口は、基板搬送エリアの送風ユニットから送風される気体をケーシング内に導入してもよい。 In the substrate cleaning apparatus of the present invention, the substrate transfer area is provided adjacent to the upstream side and the downstream side of the substrate cleaning apparatus, respectively, and the gas inlet is blown from the blower unit in the substrate transfer area. Gas may be introduced into the casing.
　この構成によれば、基板洗浄装置に隣接する基板搬送エリアの送風ユニットを利用して、ケーシング内に液滴やミストが蔓延するのを抑制することができる。 According to this configuration, it is possible to suppress the spread of droplets and mist in the casing by using the blower unit in the substrate transfer area adjacent to the substrate cleaning apparatus.
　また、本発明の基板洗浄装置は、気体流入口には、ケーシング内に気体を供給するための気体供給ラインが接続されてもよい。 In the substrate cleaning apparatus of the present invention, a gas supply line for supplying gas into the casing may be connected to the gas inlet.
　この構成によれば、気体供給ラインから供給される気体により、ケーシング内に液滴やミストが蔓延するのを抑制することができる。したがって、例えば基板洗浄装置に隣接する基板搬送エリアの送風ユニットを利用できない場合であっても、ケーシング内に液滴やミストが蔓延するのを抑制することができる。 According to this configuration, it is possible to suppress the spread of droplets and mist in the casing by the gas supplied from the gas supply line. Therefore, for example, even when the blower unit in the substrate transfer area adjacent to the substrate cleaning apparatus cannot be used, it is possible to suppress the spread of droplets and mist in the casing.
　また、本発明の基板洗浄装置は、２流体ノズルは、導電性部材で構成されてもよい。 Further, in the substrate cleaning apparatus of the present invention, the two-fluid nozzle may be composed of a conductive member.
　この構成によれば、２流体ノズルの先端部が、導電性部材で構成されるので、２流体ノズルから噴出される液滴の帯電量を抑えることができる。これにより、２流体洗浄による基板表面の帯電量を抑制でき、帯電したパーティクルが基板に付着することによるディフェクト（Defect）を抑制することができる。 According to this configuration, since the tip portion of the two-fluid nozzle is made of a conductive member, the charge amount of the droplets ejected from the two-fluid nozzle can be suppressed. As a result, the amount of charge on the substrate surface due to the two-fluid cleaning can be suppressed, and a defect caused by the charged particles adhering to the substrate can be suppressed.
　また、本発明の基板洗浄装置は、導電性を有する薬液を基板に供給する薬液供給ノズルを備えてもよい。 Moreover, the substrate cleaning apparatus of the present invention may include a chemical solution supply nozzle that supplies a conductive chemical solution to the substrate.
　この構成によれば、薬液供給ノズルから導電性を有する薬液が供給されるので、基板表面の帯電量を抑えることができる。これにより、２流体洗浄による基板表面の帯電量を抑制でき、帯電したパーティクルが基板に付着することによるディフェクト（Defect）を抑制することができる。 According to this configuration, since the chemical solution having conductivity is supplied from the chemical solution supply nozzle, the amount of charge on the substrate surface can be suppressed. As a result, the amount of charge on the substrate surface due to the two-fluid cleaning can be suppressed, and a defect caused by the charged particles adhering to the substrate can be suppressed.
　本発明によれば、２流体洗浄を行うときに、カバーからの液滴の跳ね返りを抑え、液滴が基板の表面に再付着するのを防ぐことができる。 According to the present invention, when the two-fluid cleaning is performed, the splash of the droplet from the cover can be suppressed, and the droplet can be prevented from reattaching to the surface of the substrate.
本発明の実施の形態における基板洗浄装置（基板洗浄ユニット）を備えた基板処理装置の全体構成を示す平面図である。It is a top view which shows the whole structure of the substrate processing apparatus provided with the substrate cleaning apparatus (substrate cleaning unit) in embodiment of this invention. 本発明の実施の形態における基板洗浄装置（基板洗浄ユニット）の構成を示す斜視図である。It is a perspective view which shows the structure of the substrate cleaning apparatus (substrate cleaning unit) in embodiment of this invention. 本発明の実施の形態における基板洗浄装置（基板洗浄ユニット）の構成を示す平面図である。It is a top view which shows the structure of the substrate cleaning apparatus (substrate cleaning unit) in embodiment of this invention. 本発明の実施の形態における基板洗浄装置（基板洗浄ユニット）の構成を示す側面図である。It is a side view which shows the structure of the substrate cleaning apparatus (substrate cleaning unit) in embodiment of this invention. 本発明の実施の形態における基板洗浄装置（基板洗浄ユニット）の要部を示す説明図である。It is explanatory drawing which shows the principal part of the board | substrate cleaning apparatus (board | substrate cleaning unit) in embodiment of this invention. 本発明の実施の形態の基板洗浄装置（基板洗浄ユニット）における２流体洗浄の液滴の衝突速度の説明図である。It is explanatory drawing of the collision speed of the droplet of 2 fluid washing | cleaning in the board | substrate washing | cleaning apparatus (substrate washing | cleaning unit) of embodiment of this invention. ２流体洗浄のサイドジェットの速度の説明図である。It is explanatory drawing of the speed of the side jet of 2 fluid cleaning. 他の実施の形態における基板洗浄装置（基板洗浄ユニット）の構成を示す斜視図である。It is a perspective view which shows the structure of the board | substrate cleaning apparatus (board | substrate cleaning unit) in other embodiment. 他の実施の形態における基板洗浄装置（基板洗浄ユニット）の構成を示す斜視図である。It is a perspective view which shows the structure of the board | substrate cleaning apparatus (board | substrate cleaning unit) in other embodiment. 他の実施の形態における基板洗浄装置（基板洗浄ユニット）の構成を示す斜視図である。It is a perspective view which shows the structure of the board | substrate cleaning apparatus (board | substrate cleaning unit) in other embodiment. 他の実施の形態における基板洗浄装置（基板洗浄ユニット）の構成を示す斜視図である。It is a perspective view which shows the structure of the board | substrate cleaning apparatus (board | substrate cleaning unit) in other embodiment. 他の実施の形態における基板洗浄装置（基板洗浄ユニット）の要部を示す平面図である。It is a top view which shows the principal part of the board | substrate cleaning apparatus (board | substrate cleaning unit) in other embodiment. 他の実施の形態における基板洗浄装置（基板洗浄ユニット）の要部を示す側面図である。It is a side view which shows the principal part of the board | substrate cleaning apparatus (board | substrate cleaning unit) in other embodiment. 気流改善機能を備えた基板洗浄装置（基板洗浄ユニット）の要部を示す側面図である。It is a side view which shows the principal part of the board | substrate cleaning apparatus (board | substrate cleaning unit) provided with the airflow improvement function. 気流改善機能を備えた基板洗浄装置（基板洗浄ユニット）の要部を示す側面図である。It is a side view which shows the principal part of the board | substrate cleaning apparatus (board | substrate cleaning unit) provided with the airflow improvement function. 気流改善機能を備えた基板洗浄装置（基板洗浄ユニット）の他の例の要部を示す側面図である。It is a side view which shows the principal part of the other example of the board | substrate cleaning apparatus (board | substrate cleaning unit) provided with the airflow improvement function. 気流改善機能を備えた基板洗浄装置（基板洗浄ユニット）の他の例の要部を示す側面図である。It is a side view which shows the principal part of the other example of the board | substrate cleaning apparatus (board | substrate cleaning unit) provided with the airflow improvement function. 帯電抑制機能を備えた基板洗浄装置（基板洗浄ユニット）の要部を示す側面図である。It is a side view which shows the principal part of the board | substrate cleaning apparatus (board | substrate cleaning unit) provided with the charge suppression function.
　以下、本発明の実施の形態の基板洗浄装置について、図面を用いて説明する。本実施の形態では、半導体ウェハの洗浄等に用いられる基板洗浄装置の場合を例示する。 Hereinafter, a substrate cleaning apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, a case of a substrate cleaning apparatus used for cleaning a semiconductor wafer is illustrated.
　図１は、本実施の形態の基板洗浄装置（基板洗浄ユニット）を備えた基板処理装置の全体構成を示す平面図である。図１に示すように、基板処理装置は、略矩形状のハウジング１０と、多数の半導体ウェハ等の基板をストックする基板カセットが載置されるロードポート１２を備えている。ロードポート１２は、ハウジング１０に隣接して配置されている。ロードポート１２には、オープンカセット、ＳＭＩＦ（Standard Manufacturing Interface）ポッド、またはＦＯＵＰ（Front Opening Unified Pod）を搭載することができる。ＳＭＩＦ、ＦＯＵＰは、内部に基板カセットを収納し、隔壁で覆うことにより、外部空間とは独立した環境を保つことができる密閉容器である。 FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus provided with a substrate cleaning apparatus (substrate cleaning unit) according to the present embodiment. As shown in FIG. 1, the substrate processing apparatus includes a substantially rectangular housing 10 and a load port 12 on which a substrate cassette for stocking substrates such as a number of semiconductor wafers is placed. The load port 12 is disposed adjacent to the housing 10. The load port 12 can be equipped with an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Unified Pod). SMIF and FOUP are sealed containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering with a partition wall.
　ハウジング１０の内部には、複数（図１の例では４つ）の研磨ユニット１４ａ～１４ｄと、研磨後の基板を洗浄する第１洗浄ユニット１６及び第２洗浄ユニット１８と、洗浄後の基板を乾燥させる乾燥ユニット２０が収容されている。研磨ユニット１４ａ～１４ｄは、基板処理装置の長手方向に沿って配列され、洗浄ユニット１６，１８及び乾燥ユニット２０も基板処理装置の長手方向に沿って配列されている。本発明の基板洗浄装置は、第２洗浄ユニット１８に適用されている。 Inside the housing 10 are a plurality (four in the example of FIG. 1) of polishing units 14a to 14d, a first cleaning unit 16 and a second cleaning unit 18 for cleaning the polished substrate, and a cleaned substrate. A drying unit 20 for drying is accommodated. The polishing units 14a to 14d are arranged along the longitudinal direction of the substrate processing apparatus, and the cleaning units 16, 18 and the drying unit 20 are also arranged along the longitudinal direction of the substrate processing apparatus. The substrate cleaning apparatus of the present invention is applied to the second cleaning unit 18.
　図１に示すように、ロートポート１２、該ロートポート１２側に位置する研磨ユニット１４ａ及び乾燥ユニット２０に囲まれた領域には、第１基板搬送ロボット２２が配置されている。また、研磨ユニット１４ａ～１４ｄと平行に、基板搬送ユニット２４が配置されている。第１基板搬送ロボット２２は、研磨前の基板をロートポート１２から受け取って基板搬送ユニット２４に受け渡すとともに、乾燥後の基板を乾燥ユニット２０から受け取ってロートポート１２に戻す。基板搬送ユニット２４は、第１基板搬送ロボット２２から受け取った基板を搬送して、各研磨ユニット１４ａ～１４ｄとの間で基板の受け渡しを行う。 As shown in FIG. 1, a first substrate transfer robot 22 is disposed in a region surrounded by the funnel port 12, the polishing unit 14 a located on the funnel port 12 side, and the drying unit 20. A substrate transport unit 24 is disposed in parallel with the polishing units 14a to 14d. The first substrate transfer robot 22 receives the substrate before polishing from the funnel port 12 and delivers it to the substrate transfer unit 24, and receives the dried substrate from the drying unit 20 and returns it to the funnel port 12. The substrate transport unit 24 transports the substrate received from the first substrate transport robot 22 and delivers the substrate to and from each of the polishing units 14a to 14d.
　第１洗浄ユニット１６と第２洗浄ユニット１８の間には、これらの各ユニット１６，１８との間で基板の受け渡しを行う第２基板搬送ロボット２６が配置されている。また、第２洗浄ユニット１８と乾燥ユニット２０との間には、これらの各ユニット１８，２０との間で基板の受け渡しを行う第３基板搬送ロボット２８が配置されている。 Between the first cleaning unit 16 and the second cleaning unit 18, a second substrate transfer robot 26 that transfers substrates between these units 16 and 18 is disposed. In addition, a third substrate transport robot 28 is disposed between the second cleaning unit 18 and the drying unit 20 to transfer substrates between these units 18 and 20.
　更に、ハウジング１０の内部には、基板処理装置の各機器の動きを制御する制御部３０が配置されている。この制御部３０は、第２洗浄ユニット（基板洗浄装置）１８の動きを制御する機能も備えている。 Furthermore, a control unit 30 that controls the movement of each device of the substrate processing apparatus is disposed inside the housing 10. The control unit 30 also has a function of controlling the movement of the second cleaning unit (substrate cleaning apparatus) 18.
　本実施の形態では、第１洗浄ユニット１６として、洗浄液の存在下で、基板の表裏両面にロール状に延びるロール洗浄部材を擦り付けて基板を洗浄するロール洗浄ユニットが使用されている。この第１洗浄ユニット（ロール洗浄ユニット）１６は、洗浄液に１ＭＨｚ付近の超音波を加え、洗浄液の振動加速度による作用力を基板表面に付着した微粒子に作用させるメガソニック洗浄を併用するように構成されている。 In the present embodiment, a roll cleaning unit is used as the first cleaning unit 16 to clean the substrate by rubbing roll cleaning members extending in a roll shape on both the front and back surfaces of the substrate in the presence of the cleaning liquid. The first cleaning unit (roll cleaning unit) 16 is configured to use in combination with megasonic cleaning in which ultrasonic waves of about 1 MHz are applied to the cleaning liquid and the action force due to the vibration acceleration of the cleaning liquid is applied to the fine particles adhering to the substrate surface. ing.
　また、第２洗浄ユニット１８として、本発明の基板洗浄装置が使用されている。また、乾燥ユニット２０として、基板を保持し、移動するノズルからＩＰＡ蒸気を噴出して基板を乾燥させ、更に高速で回転させ遠心力によって基板を乾燥させるスピン乾燥ユニットが使用されている。なお、洗浄部は、洗浄ユニット１６，１８を上下２段に配置した上下２段構造としてもよい。この場合、洗浄部は、上下２段の基板処理ユニットを有する。 Further, the substrate cleaning apparatus of the present invention is used as the second cleaning unit 18. As the drying unit 20, a spin drying unit is used that holds a substrate, blows IPA vapor from a moving nozzle to dry the substrate, rotates the substrate at a high speed, and dries the substrate by centrifugal force. The cleaning unit may have a two-stage structure in which the cleaning units 16 and 18 are arranged in two upper and lower stages. In this case, the cleaning unit has upper and lower two-stage substrate processing units.
　図２は、本実施の形態における基板洗浄装置（基板洗浄ユニット）の斜視図であり、図３は、本実施の形態における基板洗浄装置（基板洗浄ユニット）の平面図である。 FIG. 2 is a perspective view of the substrate cleaning apparatus (substrate cleaning unit) in the present embodiment, and FIG. 3 is a plan view of the substrate cleaning apparatus (substrate cleaning unit) in the present embodiment.
　図２及び図３に示すように、本実施の形態の基板洗浄装置（第２洗浄ユニット）１８は、基板Ｗの周囲を囲繞する洗浄槽４０と、この処理槽４０の側方に立設した回転自在な支持軸４２と、この支持軸４２の上端に基部を連結した水平方向に延びる揺動アーム４４を備えている。洗浄槽４０において、基板Ｗは、チャック等で保持され、チャック等の回転により回転するように構成されている。揺動アーム４４の自由端（先端）には、流体ノズル（２流体ノズル）４６が上下動自在に取り付けられている。 As shown in FIGS. 2 and 3, the substrate cleaning apparatus (second cleaning unit) 18 of the present embodiment is erected on the cleaning tank 40 surrounding the substrate W and on the side of the processing tank 40. A rotatable support shaft 42 and a horizontally extending swinging arm 44 having a base connected to the upper end of the support shaft 42 are provided. In the cleaning tank 40, the substrate W is held by a chuck or the like and is rotated by rotation of the chuck or the like. A fluid nozzle (two-fluid nozzle) 46 is attached to the free end (tip) of the swing arm 44 so as to be movable up and down.
　流体ノズル４６には、Ｎ２ガス等のキャリアガスを供給するキャリアガス供給ライン５０と、純水またはＣＯ２ガス溶解水等の洗浄液を供給する洗浄液供給ライン５２が接続されており、流体ノズル４６の内部に供給されたＮ２ガス等のキャリアガスと純水またはＣＯ２ガス溶解水等の洗浄液を流体ノズル４６から高速で噴出させることで、キャリアガス中に洗浄液が微小液滴（ミスト）として存在する２流体ジェット流が生成される。この流体ノズル４６で生成される２流体ジェット流を回転中の基板Ｗの表面に向けて噴出させて衝突させることで、微小液滴の基板表面への衝突で発生した衝撃波を利用した基板表面のパーティクル等を除去（洗浄）を行うことができる。 A carrier gas supply line 50 that supplies a carrier gas such as N 2 gas and a cleaning liquid supply line 52 that supplies a cleaning liquid such as pure water or CO 2 gas-dissolved water are connected to the fluid nozzle 46. A carrier gas such as N 2 gas and a cleaning liquid such as pure water or CO 2 gas-dissolved water supplied from the fluid nozzle 46 are ejected from the fluid nozzle 46 at a high speed, so that the cleaning liquid is made into fine droplets (mist) in the carrier gas. An existing two-fluid jet stream is generated. The two-fluid jet generated by the fluid nozzle 46 is ejected toward the surface of the rotating substrate W and collides with it, so that the substrate surface using the shock wave generated by the collision of the microdroplet with the substrate surface is used. Particles and the like can be removed (cleaned).
　支持軸４２は、支持軸４２を回転させることで該支持軸４２を中心に揺動アーム４４を揺動させる駆動機構としてのモータ５４に連結されている。 The support shaft 42 is connected to a motor 54 as a drive mechanism for rotating the swing arm 44 about the support shaft 42 by rotating the support shaft 42.
　この例では、揺動アーム４４の先端に、例えばＰＶＡスポンジから成るペンシル型洗浄具６０が上下動自在かつ回転自在に取り付けられている。更に、洗浄槽４０の側上方に位置して、チャック等で保持されて回転中の基板Ｗの表面に、リンス液を供給するリンス液供給ノズル６２と、薬液を供給する薬液供給ノズル６４が配置されている。ペンシル型洗浄具６０の下端を、回転中の基板Ｗの表面に所定の押圧力で接触させながら、揺動アーム４４の揺動によってペンシル型洗浄具６０を移動させ、同時に、基板Ｗの表面にリンス液または薬液を供給することで、基板Ｗの表面の接触洗浄が行われるようになっている。なお、上記基板Ｗの表面の接触洗浄は、必要に応じて行われる処理であり、必ずしも必要ではない。 In this example, a pencil type cleaning tool 60 made of, for example, PVA sponge is attached to the tip of the swing arm 44 so as to be movable up and down and rotatable. Further, a rinsing liquid supply nozzle 62 for supplying a rinsing liquid and a chemical liquid supply nozzle 64 for supplying a chemical liquid are disposed on the surface of the rotating substrate W held by a chuck or the like, which is positioned above the cleaning tank 40. Has been. While the lower end of the pencil-type cleaning tool 60 is brought into contact with the surface of the rotating substrate W with a predetermined pressing force, the pencil-type cleaning tool 60 is moved by the swinging of the swinging arm 44 and at the same time on the surface of the substrate W. By supplying the rinse liquid or the chemical liquid, the contact cleaning of the surface of the substrate W is performed. The contact cleaning of the surface of the substrate W is a process performed as necessary, and is not necessarily required.
　図３に示すように、流体ノズル４６は、揺動アーム４４の揺動に伴って、オフセット位置Ａから、基板Ｗの中心Ｏの上方位置及び該中心Ｏから所定間隔離間した変位点Ｂの上方位置を通って、基板Ｗの外周部外方の洗浄終了位置Ｃに、円弧状の移動軌跡に沿って移動することで、基板Ｗの表面の洗浄を行う。この洗浄時に、回転中の基板Ｗの表面に向けて、キャリアガス中に洗浄液が微小液滴（ミスト）として存在する２流体ジェット流を流体ノズル４６から噴出させる。なお、図３は、流体ノズル４６が変位点Ｂの上方位置に位置している状態を示している。 As shown in FIG. 3, as the swing arm 44 swings, the fluid nozzle 46 moves from the offset position A to a position above the center O of the substrate W and above a displacement point B spaced from the center O by a predetermined distance. The surface of the substrate W is cleaned by moving along the circular movement trajectory to the cleaning end position C outside the outer peripheral portion of the substrate W through the position. At the time of this cleaning, a two-fluid jet flow in which the cleaning liquid exists as fine droplets (mist) in the carrier gas is ejected from the fluid nozzle 46 toward the surface of the rotating substrate W. FIG. 3 shows a state in which the fluid nozzle 46 is located above the displacement point B.
　ここで、基板洗浄装置（基板洗浄ユニット）の構成について、図面を参照しながら、より詳細に説明する。図４は、基板洗浄装置（基板洗浄ユニット）の側面図である。 Here, the configuration of the substrate cleaning apparatus (substrate cleaning unit) will be described in more detail with reference to the drawings. FIG. 4 is a side view of the substrate cleaning apparatus (substrate cleaning unit).
　図４に示すように、基板洗浄装置は、基板Ｗを水平に保持する基板保持機構１と、基板保持機構１を介して基板Ｗをその中心軸周りに回転させるモータ（回転機構）２と、基板Ｗの周囲に配置される回転カバー３を備えている。 As shown in FIG. 4, the substrate cleaning apparatus includes a substrate holding mechanism 1 that horizontally holds the substrate W, a motor (rotating mechanism) 2 that rotates the substrate W around its central axis via the substrate holding mechanism 1, A rotating cover 3 is provided around the substrate W.
　基板保持機構１は、基板Ｗの周縁部を把持する複数のチャック７０と、これらチャック７０が固定される円形の台座７１と、この台座７１を支持するステージ７２と、このステージ７２を支持する中空状の支持軸７３を有している。この場合、台座７１、ステージ７２、支持軸７３は、同軸上に配置されている。回転カバー３は、ステージ７２の端部に固定され、ステージ７２と回転カバーも同軸上に配置されている。また、チャック７０に保持された基板Ｗと回転カバー３とは同軸上に位置している。 The substrate holding mechanism 1 includes a plurality of chucks 70 that grip the peripheral edge of the substrate W, a circular pedestal 71 to which the chucks 70 are fixed, a stage 72 that supports the pedestal 71, and a hollow that supports the stage 72. The support shaft 73 has a shape. In this case, the pedestal 71, the stage 72, and the support shaft 73 are arranged coaxially. The rotary cover 3 is fixed to the end of the stage 72, and the stage 72 and the rotary cover are also arranged coaxially. Further, the substrate W held by the chuck 70 and the rotary cover 3 are located on the same axis.
　支持軸７３の外周面にはモータ２が連結されている。モータ２のトルクは、支持軸７３に伝達され、これによりチャック７０に保持された基板Ｗが回転する。この場合、基板Ｗと回転カバーが一体に回転し、両者の相対速度は０となる。なお、基板Ｗと回転カバー３との間に若干の速度差があってもよい。 The motor 2 is connected to the outer peripheral surface of the support shaft 73. The torque of the motor 2 is transmitted to the support shaft 73, whereby the substrate W held on the chuck 70 is rotated. In this case, the substrate W and the rotating cover rotate together, and the relative speed between them is zero. There may be a slight speed difference between the substrate W and the rotary cover 3.
　このように、基板Ｗと回転カバー３を、同一の回転機構（モータ２）により回転させることができる。この場合、基板Ｗと回転カバー３を、同一の速度で回転させることができる。基板Ｗと回転カバー３とを同一の速度で回転させるとは、基板Ｗと回転カバー３とを同一の方向に同一の角速度で回転させることをいい、互いに逆方向に回転させることを含まない。この回転機構（モータ２）が、本発明の基板回転機構およびカバー回転機構に相当する。なお、基板Ｗと回転カバー３は、それぞれ別々の回転機構により回転させてもよい。 Thus, the substrate W and the rotation cover 3 can be rotated by the same rotation mechanism (motor 2). In this case, the substrate W and the rotation cover 3 can be rotated at the same speed. Rotating the substrate W and the rotating cover 3 at the same speed means rotating the substrate W and the rotating cover 3 in the same direction at the same angular velocity, and does not include rotating in the opposite directions. This rotation mechanism (motor 2) corresponds to the substrate rotation mechanism and the cover rotation mechanism of the present invention. In addition, you may rotate the board | substrate W and the rotation cover 3 with a respectively separate rotation mechanism.
　また、図４に示すように、ステージ７２には、複数の排出孔７４が形成されている。排出孔７４は、例えば、回転カバー３の周方向に延びる長孔である。流体ノズル４６から供給された洗浄液は、キャリアガスや周囲雰囲気（通常は空気）とともにこの排出孔７４を通じて排出される。本実施の形態では、排気量が１～３ｍ３／分の範囲で制御されている。そして、給気量を排気量より低く制御することにより、基板洗浄装置（基板洗浄ユニット）内の雰囲気を適切に排気される。これにより、液滴を気流に乗せて適切に排出することができ、液滴が基板上に飛散するのを抑制することができる。さらに、回転カバー３の外側には、固定カバー７５が設けられている。この固定カバー７５は、回転しない構成とされている。 As shown in FIG. 4, the stage 72 has a plurality of discharge holes 74. The discharge hole 74 is, for example, a long hole that extends in the circumferential direction of the rotary cover 3. The cleaning liquid supplied from the fluid nozzle 46 is discharged through the discharge hole 74 together with the carrier gas and the ambient atmosphere (usually air). In the present embodiment, the displacement is controlled in the range of 1 to 3 m 3 / min. Then, by controlling the air supply amount to be lower than the exhaust amount, the atmosphere in the substrate cleaning apparatus (substrate cleaning unit) is appropriately exhausted. As a result, the droplets can be appropriately discharged in an air stream, and the droplets can be prevented from scattering on the substrate. Further, a fixed cover 75 is provided outside the rotary cover 3. The fixed cover 75 is configured not to rotate.
　図５は、基板洗浄装置（基板洗浄ユニット）の要部の説明図である。本実施の形態では、基板の外端と回転カバーの先端との径方向の距離Ａは、２ｍｍ～８０ｍｍの範囲に設定され、基板と回転カバーの先端との高さ方向の距離Ｂは、３ｍｍ～５０ｍｍの範囲に設定され、基板の外端と回転カバーの内周面との径方向の距離Ｃは、２ｍｍ～８０ｍｍの範囲に設定されることが望ましい。例えば、基板の外端と回転カバーの先端との径方向の距離Ａは、２ｍｍに設定され、基板と回転カバーの先端との高さ方向の距離Ｂは、１５ｍｍに設定され、基板の外端と回転カバーの内周面との径方向の距離Ｃは、１９ｍｍに設定されている。 FIG. 5 is an explanatory diagram of a main part of the substrate cleaning apparatus (substrate cleaning unit). In the present embodiment, the radial distance A between the outer edge of the substrate and the tip of the rotary cover is set in a range of 2 mm to 80 mm, and the distance B in the height direction between the substrate and the tip of the rotary cover is 3 mm. The distance C in the radial direction between the outer edge of the substrate and the inner peripheral surface of the rotary cover is preferably set in the range of 2 mm to 80 mm. For example, the radial distance A between the outer edge of the substrate and the tip of the rotating cover is set to 2 mm, and the distance B in the height direction between the substrate and the tip of the rotating cover is set to 15 mm. The radial distance C between the rotary cover and the inner peripheral surface of the rotary cover is set to 19 mm.
　以上のように構成された基板洗浄装置について、その動作を説明する。 The operation of the substrate cleaning apparatus configured as described above will be described.
　基板処理装置では、ロードポート１２内の基板カセットから取り出した基板の表面を、研磨ユニット１４ａ～１４ｄのいずれかに搬送して研磨する。そして、研磨後の基板表面を第１洗浄ユニット（ロール洗浄ユニット）１６で洗浄した後、２流体ジェット流を使用した第２洗浄ユニット（基板洗浄ユニット）１８で更に洗浄する。この第２洗浄ユニット（基板洗浄ユニット）１８で基板表面を洗浄する時、流体ノズル４６の移動速度を制御しながら、２流体ジェット流を回転中の基板Ｗの表面に向けて噴出させる。 In the substrate processing apparatus, the surface of the substrate taken out from the substrate cassette in the load port 12 is conveyed to one of the polishing units 14a to 14d and polished. The polished substrate surface is cleaned by a first cleaning unit (roll cleaning unit) 16 and further cleaned by a second cleaning unit (substrate cleaning unit) 18 using a two-fluid jet flow. When the substrate surface is cleaned by the second cleaning unit (substrate cleaning unit) 18, the two-fluid jet is ejected toward the surface of the rotating substrate W while controlling the moving speed of the fluid nozzle 46.
　本実施の形態では、第１洗浄ユニット１６でロール洗浄して第２洗浄ユニット１８に搬入した基板を回転させながら、基板表面に、リンス液供給ノズル６２から数秒（例えば３秒）リンス液を供給して基板表面のリンス洗浄を行い、薬液供給ノズル６４から薬液を基板表面に噴射しながら、ペンシル型洗浄具６０を所定回数（例えば２～３回）でスキャンさせて基板表面をペンシル洗浄した後、同じ第２洗浄ユニット１８内で、直ちに２流体ジェット流を使用した洗浄を開始するようにしている。 In the present embodiment, the rinsing liquid is supplied from the rinsing liquid supply nozzle 62 to the substrate surface for several seconds (for example, 3 seconds) while rotating the substrate that has been roll cleaned by the first cleaning unit 16 and carried into the second cleaning unit 18. Then, the substrate surface is rinsed, and the substrate surface is pencil-cleaned by scanning the pencil-type cleaning tool 60 a predetermined number of times (for example, 2 to 3 times) while spraying the chemical solution from the chemical solution supply nozzle 64 to the substrate surface. In the same second cleaning unit 18, the cleaning using the two-fluid jet is started immediately.
　２流体ジェット流を使用した基板表面の洗浄は、揺動アーム４４を所定回数（例えば１～４回）で揺動させて、２流体ジェット流を噴出している流体ノズル４６を回転中の基板の上方を移動させることで行われる。揺動アーム４４の角速度、つまり流体ノズル４６の移動速度は、処理許容な時間および回数から算出される。なお、２流体ジェット流を使用して基板表面を洗浄しているときの基板の回転速度とペンシル型洗浄具６０使用して基板表面を洗浄しているときの基板の回転速度とを必ずしも一致させる必要はない。 The cleaning of the substrate surface using the two-fluid jet flow is performed by oscillating the swing arm 44 a predetermined number of times (for example, 1 to 4 times) and rotating the fluid nozzle 46 ejecting the two-fluid jet flow. This is done by moving the upper part of the. The angular speed of the swing arm 44, that is, the moving speed of the fluid nozzle 46 is calculated from the time and number of times allowed for processing. The rotation speed of the substrate when the substrate surface is cleaned using the two-fluid jet flow and the rotation speed of the substrate when the substrate surface is cleaned using the pencil type cleaning tool 60 are not necessarily matched. There is no need.
　そして、洗浄後の基板を第２洗浄ユニット１８から取り出し、乾燥ユニット２０に搬入してスピン乾燥させ、しかる後、乾燥後の基板をロードポート１２の基板カセット内に戻す。 Then, the substrate after cleaning is taken out from the second cleaning unit 18, carried into the drying unit 20 and spin-dried, and then the substrate after drying is returned into the substrate cassette of the load port 12.
　本実施の形態の基板洗浄装置によれば、２流体洗浄の際に、基板の回転により発生する遠心力や２流体洗浄で発生するサイドジェットにより基板の表面の液滴が飛散して回転カバーに衝突しても、回転カバーが基板と同一の回転方向に回転しているので、カバーが回転していない場合に比べて液滴の衝突速度を低減させることができる。これにより、回転カバーからの液滴の跳ね返りを抑えることができ、液滴が基板の表面に再付着するのを防ぐことができる。 According to the substrate cleaning apparatus of the present embodiment, during the two-fluid cleaning, the liquid droplets on the surface of the substrate are scattered by the centrifugal force generated by the rotation of the substrate and the side jet generated by the two-fluid cleaning to form the rotating cover. Even if a collision occurs, the rotating cover rotates in the same rotation direction as the substrate, so that the droplet collision speed can be reduced as compared with the case where the cover does not rotate. Thereby, the splash of the droplet from the rotating cover can be suppressed, and the droplet can be prevented from reattaching to the surface of the substrate.
　この場合、回転カバーが基板と同一の角速度で回転しているので、回転カバーが基板と異なる角速度で回転している場合（例えば、カバーが回転していない場合）に比べて液滴の衝突速度を低減させることができる。 In this case, since the rotating cover is rotating at the same angular velocity as the substrate, the droplet collision speed is compared to when the rotating cover is rotating at an angular velocity different from that of the substrate (for example, when the cover is not rotating). Can be reduced.
　例えば、図６に示すように、固定カバーの場合（カバーが回転していない場合）には、液滴の衝突速度Ｖは、Ｖ１（＝ｒ１ω）となり、液滴（大きな相対速度でカバーに衝突した液滴）が気流に逆らって基板上に飛散する場合があるのに対して、回転カバーの場合（特に、回転カバーが基板と同一の角速度で回転している場合）には、液滴の衝突速度Ｖは、Ｖ１－Ｖ２（＝ｒ１ω－ｒ２ω≒０）となり、液滴の衝突速度を低減することができる。この場合、液滴（小さな相対速度でカバーに衝突した液滴）は気流に乗って下部から導き出すことができる。なお、ここで、ｒ１は、基板Ｗの半径であり、ｒ２は、回転カバーの内周面の半径である。また、ωは、基板Ｗと回転カバーの角速度である。 For example, as shown in FIG. 6, in the case of a fixed cover (when the cover is not rotating), the droplet collision velocity V is V 1 (= r 1 ω), and the droplet (with a large relative velocity) In the case of a rotating cover (especially when the rotating cover is rotating at the same angular velocity as the substrate), the droplets that collide with the cover may splash on the substrate against the airflow. The droplet collision velocity V is V 1 −V 2 (= r 1 ω−r 2 ω≈0), and the droplet collision velocity can be reduced. In this case, the droplet (droplet colliding with the cover at a small relative speed) can be guided from the lower part by riding on the air current. Here, r 1 is the radius of the substrate W, and r 2 is the radius of the inner peripheral surface of the rotary cover. Further, ω is an angular velocity between the substrate W and the rotary cover.
　また、本実施の形態では、図５に示すように、基板Ｗに対して回転カバーが最適な位置に配置されるため、回転カバーからの液滴の跳ね返りを抑えることができ、液滴が基板の表面に再付着するのを防ぐことができる。 Further, in the present embodiment, as shown in FIG. 5, since the rotation cover is arranged at an optimal position with respect to the substrate W, the splash of the droplet from the rotation cover can be suppressed, and the droplet is transferred to the substrate. Can be prevented from re-adhering to the surface.
　以上、本発明の実施の形態を例示により説明したが、本発明の範囲はこれらに限定されるものではなく、請求項に記載された範囲内において目的に応じて変更・変形することが可能である。 The embodiments of the present invention have been described above by way of example, but the scope of the present invention is not limited to these embodiments, and can be changed or modified according to the purpose within the scope of the claims. is there.
　例えば、以上の説明では、搖動アーム４４の先端に流体ノズル（２流体ノズル）４６とペンシル型洗浄具６０の両方が設けられた例について説明したが、図８に示すように、搖動アーム４４の先端に流体ノズル（２流体ノズル）４６のみが設けられていてもよい。また、図９に示すように、搖動アーム４４の先端にペンシル型洗浄具６０のみが設けられていてもよい。さらに、図１０に示すように、基板洗浄装置１８には、基板Ｗの表面を超音波を用いて洗浄する超音波洗浄機９０が設けられていてもよい。 For example, in the above description, the example in which both the fluid nozzle (two-fluid nozzle) 46 and the pencil type cleaning tool 60 are provided at the tip of the peristaltic arm 44 has been described. However, as shown in FIG. Only the fluid nozzle (two-fluid nozzle) 46 may be provided at the tip. Further, as shown in FIG. 9, only the pencil-type cleaning tool 60 may be provided at the tip of the peristaltic arm 44. Furthermore, as shown in FIG. 10, the substrate cleaning apparatus 18 may be provided with an ultrasonic cleaner 90 that cleans the surface of the substrate W using ultrasonic waves.
　また、図１１に示すように、流体ノズル（２流体ノズル）４６は、基板の外周位置（エッジ位置）に設けられていてもよい。この流体ノズル（２流体ノズル）４６により、基板外周（エッジ）の表面を洗浄することができる。この場合、流体ノズル（２流体ノズル）４６の近傍に局所排気機構８０が設けられていてもよい。この局所排気機構８０により、基板の外周位置（エッジ位置）の排気を強化することができ、液滴の飛散を抑制することができる。なお、局所排気機構８０は必ずしも必要ではない。すなわち、局所排気機構８０は設けなくてもよい。 Further, as shown in FIG. 11, the fluid nozzle (two-fluid nozzle) 46 may be provided at the outer peripheral position (edge position) of the substrate. The surface of the outer periphery (edge) of the substrate can be cleaned by the fluid nozzle (two fluid nozzle) 46. In this case, a local exhaust mechanism 80 may be provided in the vicinity of the fluid nozzle (two-fluid nozzle) 46. By this local exhaust mechanism 80, exhaust at the outer peripheral position (edge position) of the substrate can be enhanced, and scattering of droplets can be suppressed. The local exhaust mechanism 80 is not always necessary. That is, the local exhaust mechanism 80 may not be provided.
　また、２流体ノズル４６は、基板Ｗの回転方向の上流側に向けて２流体ジェットを噴出するように、所定角度で傾けて設けられてもよい。例えば、２流体ノズル４６は、平面視で、基板Ｗの回転方向の上流側に向けて、回転方向（接線方向）とのなす角０°～９０°の範囲で傾けて設けることができる。図１２（ａ）の例では、２流体ノズル４６が、基板Ｗの回転方向の上流側に向けて、回転方向（接線方向）とのなす角０°で設けられている。これにより、回転する基板に対する２流体ジェットの相対速度が上昇し、洗浄性能を向上させることができる。図１２（ｂ）の例では、２流体ノズル４６が、基板Ｗの回転方向（接線方向）とのなす角９０°で設けられている。この場合、回転する基板に対する２流体ジェットの相対速度が低下せず、洗浄性能を（低下させずに）維持することができる。 Further, the two-fluid nozzle 46 may be provided to be inclined at a predetermined angle so as to eject the two-fluid jet toward the upstream side in the rotation direction of the substrate W. For example, the two-fluid nozzle 46 can be provided so as to be inclined in an angle range of 0 ° to 90 ° with the rotation direction (tangential direction) toward the upstream side in the rotation direction of the substrate W in plan view. In the example of FIG. 12A, the two-fluid nozzle 46 is provided at an angle of 0 ° with the rotation direction (tangential direction) toward the upstream side in the rotation direction of the substrate W. Thereby, the relative speed of the two-fluid jet with respect to the rotating substrate is increased, and the cleaning performance can be improved. In the example of FIG. 12B, the two-fluid nozzle 46 is provided at an angle of 90 ° with the rotation direction (tangential direction) of the substrate W. In this case, the relative speed of the two-fluid jet with respect to the rotating substrate does not decrease, and the cleaning performance can be maintained (without decreasing).
　また、２流体ノズル４６は、側面視で、基板Ｗの回転方向の上流側に向けて、回転方向とのなす角４５°～９０°の範囲で傾けて設けることができる。この場合、２流体ノズル４６は、側面視で、基板Ｗの回転方向の上流側に向けて、基板面とのなす角４５°～９０°の範囲で傾けて設けることができるともいえる。図１３（ａ）の例では、２流体ノズル４６が、基板Ｗの回転方向の上流側に向けて、回転方向（基板面）とのなす角４５°で設けられている。これにより、回転する基板に対する２流体ジェットの相対速度が上昇し、洗浄性能を向上させることができる。図１３（ｂ）の例では、２流体ノズル４６が、基板Ｗの回転方向（基板面）とのなす角９０°で設けられている。この場合、回転する基板に対する２流体ジェットの相対速度が低下せず、洗浄性能を（低下させずに）維持することができる。 Further, the two-fluid nozzle 46 can be provided so as to be inclined in an angle range of 45 ° to 90 ° with the rotation direction toward the upstream side in the rotation direction of the substrate W in a side view. In this case, it can be said that the two-fluid nozzle 46 can be provided inclined toward the upstream side in the rotation direction of the substrate W in an angle range of 45 ° to 90 ° with the substrate surface in a side view. In the example of FIG. 13A, the two-fluid nozzle 46 is provided at an angle of 45 ° with the rotation direction (substrate surface) toward the upstream side in the rotation direction of the substrate W. Thereby, the relative speed of the two-fluid jet with respect to the rotating substrate is increased, and the cleaning performance can be improved. In the example of FIG. 13B, the two-fluid nozzle 46 is provided at an angle of 90 ° with the rotation direction (substrate surface) of the substrate W. In this case, the relative speed of the two-fluid jet with respect to the rotating substrate does not decrease, and the cleaning performance can be maintained (without decreasing).
　図１４および図１５には、気流改善機能を備えた基板洗浄装置が示される。この基板洗浄装置１８は、ケーシング８０に収容されており、ケーシング８０の壁面の上部には、一対の通気プレート８１が設けられている。この場合、通気プレート８１は、基板Ｗより高い位置（図１４において上側）に配置されている。基板洗浄装置１８の上流側（図１４における左側）には、第２基板搬送ロボット２６の基板搬送エリア８２が隣接して設けられており、基板洗浄装置１８の下流側（図１４における右側）には、第３基板搬送ロボット２８の基板搬送エリア８３が隣接して設けられている。各基板搬送エリア８２、８３の上部には、それぞれ送風ユニット８４が設けられており、通気プレート８１には、送風ユニット８４から送風される気体をケーシング８０の内部に導入する気体流入口８５が設けられている。送風ユニット８４としては、例えば、ファンで空気を吸い込んでフィルターで清浄化するＦＦＵ（ファン・フィルタ・ユニット）を採用してもよい。この送風ユニット８４を備えることにより、基板を搬送するための基板搬送エリア８２、８３内で、垂直方向上方から下方へと清浄な空気をそれぞれ送風することができるため、下方からの粒子等の舞い上がりを防止し、基板搬送エリア８２、８３内で搬送中の基板の汚染を防止することができる。ケーシング８０の下部には、ケーシング８０の内部の気体を外部に排出する気体排出口８６が設けられている。この気体排出口８６は、上述の排出孔７４であってもよい。 14 and 15 show a substrate cleaning apparatus having an airflow improvement function. The substrate cleaning device 18 is accommodated in a casing 80, and a pair of ventilation plates 81 are provided on the upper surface of the wall surface of the casing 80. In this case, the ventilation plate 81 is disposed at a position higher than the substrate W (upper side in FIG. 14). A substrate transfer area 82 of the second substrate transfer robot 26 is provided adjacent to the upstream side of the substrate cleaning device 18 (left side in FIG. 14), and on the downstream side (right side in FIG. 14) of the substrate cleaning device 18. Are provided adjacent to a substrate transfer area 83 of the third substrate transfer robot 28. A blower unit 84 is provided above each of the substrate transfer areas 82 and 83, and a gas inlet 85 that introduces gas blown from the blower unit 84 into the casing 80 is provided in the ventilation plate 81. It has been. As the blower unit 84, for example, an FFU (fan filter unit) that sucks air with a fan and cleans it with a filter may be adopted. By providing this blower unit 84, clean air can be blown from the upper side to the lower side in the vertical direction in the substrate transfer areas 82 and 83 for transferring the substrate, so that particles and the like rise from the lower side. And contamination of the substrate being transferred in the substrate transfer areas 82 and 83 can be prevented. A gas discharge port 86 for discharging the gas inside the casing 80 to the outside is provided at the lower part of the casing 80. The gas discharge port 86 may be the discharge hole 74 described above.
　このような基板洗浄装置１８によれば、ケーシング８０の対向する壁面に設けられた一対の気体流入口８５からケーシング８０の内部に気体が流入する。一対の気体流入口８５は基板Ｗより高い位置に配置されているので、一対の気体流入口８５から流入した気体は、ケーシング８０の中央部において基板Ｗの上方でぶつかって、下降気流が形成され、ケーシング８０の下部の気体排出口８６から外部に排出される。このとき、ケーシング８０の内部の液滴やミストも、下降気流にのってケーシング８０の下部の気体排出口８６から外部に排出される。これにより、ケーシング８０の内部に液滴やミストが蔓延するのを抑制することができ、液滴やミストの再付着による汚染、ディフェクト（Defect）を抑制することができる。この場合、基板洗浄装置１８に隣接する基板搬送エリア８２、８３の送風ユニット８４を利用して、ケーシング８０の内部に液滴やミストが蔓延するのを抑制することができる。 According to such a substrate cleaning apparatus 18, gas flows into the casing 80 from the pair of gas inlets 85 provided on the opposing wall surfaces of the casing 80. Since the pair of gas inlets 85 are disposed at a position higher than the substrate W, the gas flowing in from the pair of gas inlets 85 collides with the upper part of the substrate W at the center portion of the casing 80 to form a descending airflow. The gas is discharged to the outside through a gas discharge port 86 at the bottom of the casing 80. At this time, droplets and mist inside the casing 80 are also discharged to the outside through the gas discharge port 86 at the bottom of the casing 80 along the descending airflow. Thereby, it can suppress that a droplet and mist spread in the inside of the casing 80, and the contamination by the reattachment of a droplet or mist and a defect (Defect) can be suppressed. In this case, it is possible to suppress the spread of droplets and mist in the casing 80 by using the blower unit 84 in the substrate transfer areas 82 and 83 adjacent to the substrate cleaning apparatus 18.
　また、図１６および図１７には、気流改善機能を備えた基板洗浄装置の変形例が示される。この例では、通気プレート８１に気体供給ライン８７の気体供給ポート８８が接続されており、気体供給ライン８７から供給された気体（例えばＮ２ガス）が気体流入口８５からケーシング８０の内部に供給される。なお、気体供給ライン８７にはバルブ８９が設けられており、気体の供給をオン／オフ制御することができる。例えば、基板Ｗがケーシング８０の内部に搬送されたタイミングで、気体の供給をオン（開始）にし、基板Ｗの洗浄後、基板Ｗをケーシングから外部へ搬送したタイミングで、気体の供給をオフ（停止）にする。 16 and 17 show a modified example of the substrate cleaning apparatus having an airflow improvement function. In this example, the gas supply port 88 of the gas supply line 87 is connected to the ventilation plate 81, and the gas (for example, N 2 gas) supplied from the gas supply line 87 is supplied into the casing 80 from the gas inlet 85. Is done. The gas supply line 87 is provided with a valve 89, and the gas supply can be controlled on / off. For example, the gas supply is turned on (started) at the timing when the substrate W is transferred into the casing 80, and the gas supply is turned off at the timing when the substrate W is transferred from the casing to the outside after the cleaning of the substrate W ( Stop).
　この変形例によっても、気体供給ライン８７から供給される気体により、ケーシング８０の内部に液滴やミストが蔓延するのを抑制することができる。この場合には、例えば基板洗浄装置１８に隣接する基板搬送エリア８２、８３の送風ユニット８４を利用できない状況であっても、ケーシング８０の内部に液滴やミストが蔓延するのを抑制することができる。 Also in this modification, it is possible to suppress the spread of droplets and mist in the casing 80 due to the gas supplied from the gas supply line 87. In this case, for example, even when the blower unit 84 in the substrate transfer areas 82 and 83 adjacent to the substrate cleaning apparatus 18 cannot be used, it is possible to suppress the spread of droplets and mist in the casing 80. it can.
　図１８には、帯電抑制を備えた基板洗浄装置が示される。この基板洗浄装置１８は、導電性を有する薬液を基板Ｗに供給する薬液供給ノズル６４と、リンス液（例えば純水）を基板Ｗに供給するリンス供給ノズル６２を備えている。この基板洗浄装置１８では、まず基板Ｗが搬入されると、薬液供給ノズル６４から基板Ｗの表面に導電性を有する薬液が供給され（図１８（ａ）参照）、その後、２流体ノズル４６から２流体ジェットを噴出させて、基板Ｗの２流体洗浄が行われる（図１８（ｂ）参照）。２流体洗浄を行う間、薬液供給ノズル６４から導電性を有する薬液を供給し続けることが望ましい。そして、２流体洗浄が終了した後、リンス供給ノズル６２からリンス液が基板Ｗの表面に供給されて、薬液が洗い流される（図１８（ｃ）参照）。 FIG. 18 shows a substrate cleaning apparatus provided with charging suppression. The substrate cleaning apparatus 18 includes a chemical solution supply nozzle 64 that supplies a conductive chemical solution to the substrate W, and a rinse supply nozzle 62 that supplies a rinse solution (for example, pure water) to the substrate W. In the substrate cleaning apparatus 18, when the substrate W is first carried in, a chemical solution having conductivity is supplied from the chemical solution supply nozzle 64 to the surface of the substrate W (see FIG. 18A), and then from the two-fluid nozzle 46. A two-fluid cleaning is performed on the substrate W by ejecting a two-fluid jet (see FIG. 18B). During the two-fluid cleaning, it is desirable to continue supplying the chemical liquid having conductivity from the chemical liquid supply nozzle 64. After the two-fluid cleaning is completed, the rinse liquid is supplied from the rinse supply nozzle 62 to the surface of the substrate W, and the chemical liquid is washed away (see FIG. 18C).
　このような基板洗浄装置１８によれば、薬液供給ノズル６４から導電性を有する薬液が供給されるので、基板Ｗの表面の帯電量を抑えることができる。これにより、２流体洗浄による基板表面の帯電量を抑制でき、帯電したパーティクルが基板Ｗに付着することによる汚染、ディフェクト（Defect）を抑制することができる。 According to such a substrate cleaning apparatus 18, since the chemical solution having conductivity is supplied from the chemical solution supply nozzle 64, the amount of charge on the surface of the substrate W can be suppressed. As a result, the amount of charge on the substrate surface due to the two-fluid cleaning can be suppressed, and contamination and defects caused by the charged particles adhering to the substrate W can be suppressed.
　なお、２流体ノズル４６は、導電性部材（例えば、導電性ＰＥＥＫなど）で構成されてもよい。このような構成によっても、２流体ノズル４６から噴出される液滴の帯電量を抑えることができる。したがって、２流体洗浄による基板表面の帯電量を抑制でき、帯電したパーティクルが基板Ｗに付着することによる、汚染、ディフェクト（Defect）を抑制することができる。 Note that the two-fluid nozzle 46 may be formed of a conductive member (for example, conductive PEEK). Even with such a configuration, the charge amount of the droplets ejected from the two-fluid nozzle 46 can be suppressed. Accordingly, the amount of charge on the substrate surface due to the two-fluid cleaning can be suppressed, and contamination and defects caused by the charged particles adhering to the substrate W can be suppressed.
　また、ＣＯ２ガス溶解水等の洗浄液に比べてキャリアガス（Ｎ２ガス等）のほうが流速が大きく、したがって、洗浄液供給ライン５２に比べて、キャリアガス（Ｎ２ガス等）のキャリアガス供給ライン５０のほうが帯電しやすい。そこで、２流体ノズル４６だけでなく、２流体ノズル４６に接続されたキャリアガス供給ライン５０を形成する部材にも導電性部材を用い、キャリアガス供給ライン５０がケーシング８０から出たポイントで、接地（アース）するように導線１０１をキャリアガス供給ライン５０と接続させることで、さらに、帯電を有効に防止できる（図１８（ａ）参照）。このように構成した場合、帯電したパーティクルが基板Ｗに付着することを抑制できるため、薬液供給ノズル６４は、必ずしも設けなくてもよい（このときには、リンス供給ノズル６２を設けないようにすることもできる）。また、基板洗浄装置１８より下流に、リンス液で基板Ｗを洗浄する洗浄ユニットが設けられている場合には、薬液供給ノズル６４は設けるようにするものの、リンス供給ノズル６２は、必ずしも設けなくてもよい。 Further, the carrier gas (N 2 gas or the like) has a larger flow velocity than the cleaning liquid such as CO 2 gas-dissolved water, and therefore, the carrier gas supply line for the carrier gas (N 2 gas or the like) compared to the cleaning liquid supply line 52. 50 is easier to be charged. Therefore, a conductive member is used not only for the two-fluid nozzle 46 but also for a member that forms the carrier gas supply line 50 connected to the two-fluid nozzle 46, and the carrier gas supply line 50 is grounded at the point where it comes out of the casing 80. By connecting the conductive wire 101 to the carrier gas supply line 50 so as to be grounded, charging can be effectively prevented (see FIG. 18A). In such a configuration, since the charged particles can be prevented from adhering to the substrate W, the chemical supply nozzle 64 is not necessarily provided (in this case, the rinse supply nozzle 62 may not be provided). it can). Further, when a cleaning unit for cleaning the substrate W with the rinsing liquid is provided downstream from the substrate cleaning apparatus 18, the chemical supply nozzle 64 is provided, but the rinsing supply nozzle 62 is not necessarily provided. Also good.
　なお、本発明の基板洗浄装置が有する、上述の気流改善機能（図１４～図１７を参照）については、２流体ノズルを用いた基板洗浄装置だけでなく、ペンシル型洗浄具などの揺動洗浄機構や超音波洗浄機構を用いた基板洗浄装置にも適用できる。また、上述したような、導電性部材で構成される２流体ノズルおよびキャリアガス供給ラインは、本実施例に記載した回転可能なカバーを有する基板洗浄装置だけでなく、固定されたカバーを有する基板洗浄装置にも適用することができる。 Note that the above-described airflow improvement function (see FIGS. 14 to 17) of the substrate cleaning apparatus of the present invention is not limited to the substrate cleaning apparatus using the two-fluid nozzle, but also the oscillating cleaning of a pencil type cleaning tool or the like. It can also be applied to a substrate cleaning apparatus using a mechanism or an ultrasonic cleaning mechanism. In addition, the two-fluid nozzle and the carrier gas supply line formed of the conductive member as described above are not only the substrate cleaning apparatus having the rotatable cover described in this embodiment, but also the substrate having the fixed cover. It can also be applied to a cleaning device.
　以上のように、本発明にかかる基板洗浄装置は、２流体洗浄を行うときに、カバーからの液滴の跳ね返りを抑え、液滴が基板の表面に再付着するのを防ぐことができるという効果を有し、半導体ウェハの洗浄等に用いられ、有用である。 As described above, the substrate cleaning apparatus according to the present invention has an effect that, when performing two-fluid cleaning, it is possible to suppress the splash of the droplet from the cover and prevent the droplet from reattaching to the surface of the substrate. It is useful for cleaning semiconductor wafers and the like.
　１　基板保持機構
　２　モータ（基板回転機構、カバー回転機構）
　３　回転カバー
　１０　ハウジング
　１２　ロードポート
　１４ａ～１４ｄ　研磨ユニット
　１６　第１洗浄ユニット
　１８　第２洗浄ユニット（基板洗浄装置）
　２０　乾燥ユニット
　２２　第１基板搬送ロボット
　２４　基板搬送ユニット
　２６　第２基板搬送ロボット
　２８　第３基板搬送ロボット
　３０　制御部
　４０　洗浄槽
　４２　支持軸
　４４　揺動アーム
　４６　流体ノズル（２流体ノズル）
　５０　キャリアガス供給ライン
　５２　洗浄液供給ライン
　５４　モータ
　６０　ペンシル型洗浄具
　６２　リンス液供給ノズル
　６４　薬液供給ノズル
　７０　チャック
　７１　台座
　７２　ステージ
　７３　支持軸
　７４　排出孔
　７５　固定カバー
　８０　ケーシング
　８１　通気プレート
　８２　基板搬送エリア
　８３　基板搬送エリア
　８４　送風ユニット
　８５　気体流入口
　８６　気体排出口
　８７　気体供給ライン
　８８　気体供給ポート
　８９　バルブ
　９０　超音波洗浄機
　Ｗ　基板 1. Substrate holding mechanism 2. Motor (substrate rotation mechanism, cover rotation mechanism)
3 Rotating Cover 10 Housing 12 Load Port 14a-14d Polishing Unit 16 First Cleaning Unit 18 Second Cleaning Unit (Substrate Cleaning Device)
20 Drying Unit 22 First Substrate Transfer Robot 24 Substrate Transfer Unit 26 Second Substrate Transfer Robot 28 Third Substrate Transfer Robot 30 Control Unit 40 Cleaning Tank 42 Support Shaft 44 Oscillating Arm 46 Fluid Nozzle (Two Fluid Nozzle)
DESCRIPTION OF SYMBOLS 50 Carrier gas supply line 52 Cleaning liquid supply line 54 Motor 60 Pencil type cleaning tool 62 Rinse liquid supply nozzle 64 Chemical liquid supply nozzle 70 Chuck 71 Base 72 Stage 73 Support shaft 74 Discharge hole 75 Fixed cover 80 Casing 81 Ventilation plate 82 Substrate conveyance area 83 Substrate transfer area 84 Blower unit 85 Gas inlet 86 Gas outlet 87 Gas supply line 88 Gas supply port 89 Valve 90 Ultrasonic cleaner W Substrate

Claims (12)

  1. 　基板を保持する基板保持機構と、
    　前記基板保持機構に保持された前記基板を回転させる基板回転機構と、
    　前記基板の表面に向けて２流体ジェットを噴出させる２流体ノズルと、
    　前記基板の周囲に配置されるカバーと、
    　前記カバーを回転させるカバー回転機構と、
    を備え、
    　前記カバー回転機構は、前記基板と同一の回転方向に前記カバーを回転させることを特徴とする基板洗浄装置。     A substrate holding mechanism for holding the substrate;
    A substrate rotation mechanism for rotating the substrate held by the substrate holding mechanism;
    A two-fluid nozzle that ejects a two-fluid jet toward the surface of the substrate;
    A cover disposed around the substrate;
    A cover rotation mechanism for rotating the cover;
    With
    The substrate cleaning apparatus, wherein the cover rotation mechanism rotates the cover in the same rotation direction as the substrate.
  2. 　基板を保持する基板保持機構と、
    　前記基板保持機構に保持された前記基板を回転させる基板回転機構と、
    　前記基板の表面を搖動して洗浄する搖動洗浄機構と、
    　前記基板の周囲に配置されるカバーと、
    　前記カバーを回転させるカバー回転機構と、
    を備え、
    　前記カバー回転機構は、前記基板と同一の回転方向に前記カバーを回転させることを特徴とする基板洗浄装置。     A substrate holding mechanism for holding the substrate;
    A substrate rotation mechanism for rotating the substrate held by the substrate holding mechanism;
    A peristaltic cleaning mechanism for perforating and cleaning the surface of the substrate;
    A cover disposed around the substrate;
    A cover rotation mechanism for rotating the cover;
    With
    The substrate cleaning apparatus, wherein the cover rotation mechanism rotates the cover in the same rotation direction as the substrate.
  3. 　基板を保持する基板保持機構と、
    　前記基板保持機構に保持された前記基板を回転させる基板回転機構と、
    　前記基板の表面を超音波を用いて洗浄する超音波洗浄機構と、
    　前記基板の周囲に配置されるカバーと、
    　前記カバーを回転させるカバー回転機構と、
    を備え、
    　前記カバー回転機構は、前記基板と同一の回転方向に前記カバーを回転させることを特徴とする基板洗浄装置。     A substrate holding mechanism for holding the substrate;
    A substrate rotation mechanism for rotating the substrate held by the substrate holding mechanism;
    An ultrasonic cleaning mechanism for cleaning the surface of the substrate using ultrasonic waves;
    A cover disposed around the substrate;
    A cover rotation mechanism for rotating the cover;
    With
    The substrate cleaning apparatus, wherein the cover rotation mechanism rotates the cover in the same rotation direction as the substrate.
  4. 　前記カバー回転機構は、前記基板と同一の角速度で前記カバーを回転させる、請求項１～請求項３のいずれかに記載の基板洗浄装置。 4. The substrate cleaning apparatus according to claim 1, wherein the cover rotating mechanism rotates the cover at the same angular velocity as the substrate.
  5. 　前記基板の外端と前記カバーの先端との径方向の距離Ａは、２ｍｍ～８０ｍｍの範囲に設定され、
    　前記基板と前記カバーの先端との高さ方向の距離Ｂは、３ｍｍ～５０ｍｍの範囲に設定され、
    　前記基板の外端と前記カバーの内周面との径方向の距離Ｃは、２ｍｍ～８０ｍｍの範囲に設定される、請求項１～請求項４のいずれかに記載の基板洗浄装置。     The radial distance A between the outer edge of the substrate and the tip of the cover is set in a range of 2 mm to 80 mm,
    A distance B in the height direction between the substrate and the tip of the cover is set in a range of 3 mm to 50 mm,
    The substrate cleaning apparatus according to any one of claims 1 to 4, wherein a radial distance C between an outer end of the substrate and an inner peripheral surface of the cover is set in a range of 2 mm to 80 mm.
  6. 　前記基板の外端と前記カバーの先端との径方向の距離Ａは、２ｍｍに設定され、
    　前記基板と前記カバーの先端との高さ方向の距離Ｂは、１５ｍｍに設定され、
    　前記基板の外端と前記カバーの内周面との径方向の距離Ｃは、１９ｍｍに設定される、請求項５に記載の基板洗浄装置。     The radial distance A between the outer edge of the substrate and the tip of the cover is set to 2 mm,
    A distance B in the height direction between the substrate and the tip of the cover is set to 15 mm,
    The substrate cleaning apparatus according to claim 5, wherein a radial distance C between the outer end of the substrate and the inner peripheral surface of the cover is set to 19 mm.
  7. 　前記２流体ノズルは、前記基板の回転方向の上流側に向けて前記２流体ジェットを噴出するように、所定角度で傾けて設けられている、請求項１に記載の基板洗浄装置。 2. The substrate cleaning apparatus according to claim 1, wherein the two-fluid nozzle is inclined at a predetermined angle so as to eject the two-fluid jet toward the upstream side in the rotation direction of the substrate.
  8. 　前記基板洗浄装置を収容するケーシングと、
    　前記ケーシングの壁面に設けられ、前記ケーシング内に気体を流入させる一対の気体流入口と、
    　前記ケーシングの下部に設けられ、前記ケーシング内の気体を排出する気体排出口と、
    を備え、
    　前記一対の気体流入口は、前記ケーシングの対向する壁面に設けられ、前記基板より高い位置に配置されている、請求項１に記載の基板洗浄装置。     A casing for housing the substrate cleaning apparatus;
    A pair of gas inlets that are provided on the wall of the casing and allow gas to flow into the casing;
    A gas outlet provided in a lower portion of the casing, for discharging the gas in the casing;
    With
    The substrate cleaning apparatus according to claim 1, wherein the pair of gas inlets are provided on opposing wall surfaces of the casing and are disposed at a position higher than the substrate.
  9. 　前記基板洗浄装置の上流側および下流側には、それぞれ基板搬送エリアが隣接して設けられており、
    　前記気体流入口は、前記基板搬送エリアの送風ユニットから送風される気体を前記ケーシング内に導入する、請求項８に記載の基板洗浄装置。     A substrate transport area is provided adjacent to each of the upstream side and the downstream side of the substrate cleaning apparatus,
    The substrate cleaning apparatus according to claim 8, wherein the gas inlet introduces a gas blown from a blower unit in the substrate transfer area into the casing.
  10. 　前記気体流入口には、前記ケーシング内に前記気体を供給するための気体供給ラインが接続されている、請求項８に記載の基板洗浄装置。 9. The substrate cleaning apparatus according to claim 8, wherein a gas supply line for supplying the gas into the casing is connected to the gas inlet.
  11. 　前記２流体ノズルは、導電性部材で構成される、請求項１に記載の基板洗浄装置。 The substrate cleaning apparatus according to claim 1, wherein the two-fluid nozzle is formed of a conductive member.
  12. 　導電性を有する薬液を前記基板に供給する薬液供給ノズルを備える、請求項１に記載の基板洗浄装置。 The substrate cleaning apparatus according to claim 1, further comprising a chemical solution supply nozzle that supplies a conductive chemical solution to the substrate.
PCT/JP2015/081570 2014-11-11 2015-11-10 Substrate washing device WO2016076303A1 (en)

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CN201580061139.XA CN107004593B (en) 2014-11-11 2015-11-10 Substrate cleaning device
KR1020217036118A KR102461262B1 (en) 2014-11-11 2015-11-10 Substrate washing device

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JPH0795540B2 (en) * 1988-04-11 1995-10-11 株式会社日立製作所 Method and apparatus for cleaning both sides of substrate using ultrasonic cleaning spray nozzle
JPH081064A (en) * 1994-06-20 1996-01-09 Dainippon Screen Mfg Co Ltd Rotary treating device
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JP2009117794A (en) * 2007-10-17 2009-05-28 Ebara Corp Substrate cleaning apparatus
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JPH0795540B2 (en) * 1988-04-11 1995-10-11 株式会社日立製作所 Method and apparatus for cleaning both sides of substrate using ultrasonic cleaning spray nozzle
JPH081064A (en) * 1994-06-20 1996-01-09 Dainippon Screen Mfg Co Ltd Rotary treating device
JP2000153210A (en) * 1998-11-19 2000-06-06 Hitachi Ltd Rotary substrate treating device
JP2006286947A (en) * 2005-03-31 2006-10-19 Toshiba Corp Method and apparatus for cleaning electronic device
JP2006332244A (en) * 2005-05-25 2006-12-07 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
JP2008159789A (en) * 2006-12-22 2008-07-10 Renesas Technology Corp Semiconductor device manufacturing method
JP2009016752A (en) * 2007-07-09 2009-01-22 Dainippon Screen Mfg Co Ltd Substrate treatment device and substrate treatment method
JP2009117794A (en) * 2007-10-17 2009-05-28 Ebara Corp Substrate cleaning apparatus
JP2009295662A (en) * 2008-06-03 2009-12-17 Tokyo Electron Ltd Liquid processing apparatus, liquid processing method and storage medium
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