JP6934918B2 - Substrate cleaning equipment - Google Patents

Description

The present invention relates to a substrate cleaning device that cleans a substrate surface using a two-fluid jet.

Conventionally, as a cleaning method for cleaning the surface of a substrate in a non-contact manner, a cleaning method using a two-fluid jet (2FJ) has been known. In this 2FJ cleaning, high-speed gas (for example, CO ₂ gas)
A small droplet (for example, a mist of pure water) placed on the surface of the substrate is ejected from a two-fluid nozzle toward the surface of the substrate to cause collision, and the shock wave generated by the collision of the droplet with the surface of the substrate is used to surface the substrate surface. Removes (cleans) particles and the like (see, for example, Patent Document 1).

In high-speed 2FJ cleaning, the gas flow rate is high and the flow velocity is high (200 m / sec or more, preferably 250 m / sec or more). Therefore, the droplets supplied to the substrate surface are likely to be charged (compared to normal 2F cleaning) due to the contact between the gas and pure water or the contact between the droplets and the inner wall of the nozzle at the time of ejection. Therefore, in high-speed 2FJ cleaning, the amount of charge on the substrate surface during cleaning tends to increase.

Japanese Unexamined Patent Publication No. 2005-294891

_{Conventionally, in normal 2FJ cleaning, CO 2} gas is mixed in advance with pure water supplied to the 2FJ nozzle to ionize _{CO 2} water to facilitate the flow of electric charges (electrons), thereby reducing the amount of electric charge of the droplets. It was suppressed. However, in high-speed 2FJ cleaning, there is a problem that the amount of charge of the droplets cannot be sufficiently suppressed by such a conventional method, and particles are likely to adhere due to the influence of the charge.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate cleaning apparatus capable of suppressing charging of the surface of a substrate to be cleaned even with high-speed 2FJ cleaning.

The substrate cleaning device of the present invention has a substrate holding mechanism for holding a substrate, a substrate rotating mechanism for rotating the substrate held by the substrate holding mechanism, and a two-fluid jet toward the surface of the rotating substrate. It is provided with a two-fluid nozzle for ejecting and a specific resistance adjusting mechanism for adjusting the specific resistance value of the cleaning liquid supplied to the two-fluid nozzle.

According to this configuration, the specific resistance value of the _{cleaning liquid (for example, CO 2} water) supplied to the two-fluid nozzle can be adjusted by using the specific resistance adjusting mechanism. The smaller the specific resistance value of the cleaning liquid supplied to the two-fluid nozzle, the more the charge amount of the droplets ejected from the two-fluid nozzle can be suppressed. As a result, even in high-speed 2FJ cleaning, it is possible to suppress the surface of the substrate to be cleaned from being charged, and it is possible to suppress the charged particles from adhering to the substrate.

Further, the substrate cleaning device of the present invention may include a flow rate adjusting mechanism for adjusting the flow rate of the cleaning liquid supplied to the two-fluid nozzle.

According to this configuration, the flow rate of the cleaning liquid supplied to the two-fluid nozzle can be adjusted by using the flow rate adjusting mechanism. The larger the flow rate of the cleaning liquid supplied to the two-fluid nozzle, the more the charge amount of the droplets ejected from the two-fluid nozzle can be suppressed. As a result, even in high-speed 2FJ cleaning, it is possible to suppress the surface of the substrate to be cleaned from being charged, and it is possible to suppress the charged particles from adhering to the substrate.

Further, the substrate cleaning apparatus of the present invention includes a rinse liquid supply nozzle that supplies a rinse liquid toward the surface of the substrate, even if the rinse liquid supply nozzle can supply the cleaning liquid to the surface of the substrate. good.

According to this configuration, not only the cleaning liquid is supplied to the surface of the substrate from the two-fluid nozzle, but also the cleaning liquid is supplied to the surface of the substrate from the rinse liquid supply nozzle, so that the flow rate of the cleaning liquid supplied to the surface of the substrate. Can be increased. The larger the flow rate of the cleaning liquid supplied to the surface of the substrate, the more the amount of charge on the surface of the substrate can be suppressed. As a result, even in high-speed 2FJ cleaning, it is possible to suppress the surface of the substrate to be cleaned from being charged, and it is possible to suppress the charged particles from adhering to the substrate.

Further, the substrate cleaning apparatus of the present invention may be provided with a chemical solution supply nozzle for supplying a chemical solution having conductivity toward the surface of the substrate.

According to this configuration, since the conductive chemical solution is supplied to the surface of the substrate from the chemical solution supply nozzle, the amount of charge on the surface of the substrate can be suppressed. As a result, even in high-speed 2FJ cleaning, it is possible to suppress the surface of the substrate to be cleaned from being charged, and it is possible to suppress the charged particles from adhering to the substrate.

Further, in the substrate cleaning apparatus of the present invention, the ejection speed of the two-fluid jet may be at least 200 m / sec or more, preferably 250 m / sec or more.

According to this configuration, high-speed 2FJ cleaning (2FJ cleaning in which the speed of droplets ejected as a two-fluid jet is at least 200 m / sec or more, preferably 250 m / or more) is performed on the substrate to be cleaned. It is possible to suppress the surface from being charged.

According to the present invention, it is possible to suppress the surface of the substrate to be cleaned from being charged even in high-speed 2FJ cleaning.

It is a top view which shows the whole structure of the substrate processing apparatus provided with the substrate cleaning apparatus (the substrate cleaning unit) in 1st Embodiment of this invention. It is a perspective view which shows the structure of the substrate cleaning apparatus (board cleaning unit) in 1st Embodiment of this invention. It is a top view which shows the structure of the substrate cleaning apparatus (board cleaning unit) in 1st Embodiment of this invention. It is a side view which shows the structure of the substrate cleaning apparatus (board cleaning unit) in 1st Embodiment of this invention. It is explanatory drawing of the charge suppression effect of the substrate cleaning apparatus (board cleaning unit) in the 1st Embodiment of this invention. It is explanatory drawing of the charge suppression effect of the substrate cleaning apparatus (board cleaning unit) in the 1st Embodiment of this invention. It is explanatory drawing of the charge suppression effect of the substrate cleaning apparatus (board cleaning unit) in the 1st Embodiment of this invention. It is a side view which shows the structure of the substrate cleaning apparatus (board cleaning unit) in the 2nd Embodiment of this invention.

Hereinafter, the substrate cleaning apparatus according to the embodiment of the present invention will be described with reference to the drawings. In this embodiment, the case of a substrate cleaning device used for cleaning a semiconductor wafer or the like will be illustrated.

(First Embodiment)
The configuration of the substrate cleaning apparatus according to the first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view showing the overall configuration of a substrate processing apparatus including the substrate cleaning apparatus (board cleaning unit) of the present embodiment. As shown in FIG. 1, the substrate processing apparatus includes a substantially rectangular housing 10 and a load port 12 on which a substrate cassette for stocking substrates such as a large number of semiconductor wafers is placed. The load port 12 is arranged adjacent to the housing 10. The load port 12 has an open cassette, SMIF (Standard Manufacturing Inter).
face) Pod or FOUP (Front Opening Unified Pod) can be installed. SMIF and FOUP are airtight containers that can maintain an environment independent of the external space by storing the substrate cassette inside and covering it with a partition wall.

Inside the housing 10, a plurality of (four in the example of FIG. 1) polishing units 14a to 14d, a first cleaning unit 16 and a second cleaning unit 18 for cleaning the polished substrate, and a cleaned substrate are placed. A drying unit 20 for drying is housed. The polishing units 14a to 14d are arranged along the longitudinal direction of the substrate processing apparatus, and the cleaning units 16 and 18 and the drying unit 20 are also arranged along the longitudinal direction of the substrate processing apparatus. The substrate cleaning apparatus of the present invention is applied to the second cleaning unit 18.

As shown in FIG. 1, the first substrate transfer robot 22 is arranged in the area surrounded by the funnel port 12, the polishing unit 14a located on the funnel port 12 side, and the drying unit 20. Further, the substrate transport unit 24 is arranged in parallel with the polishing units 14a to 14d. The first substrate transfer robot 22 receives the substrate before polishing from the funnel port 12 and delivers it to the substrate transfer unit 24, and receives the dried substrate from the drying unit 20 and returns it to the funnel port 12. The substrate transfer unit 24 transports the substrate received from the first substrate transfer robot 22 and transfers the substrate between the polishing units 14a to 14d.

Between the first cleaning unit 16 and the second cleaning unit 18, a second substrate transfer robot 26 that transfers the substrate between the units 16 and 18 is arranged. Further, between the second cleaning unit 18 and the drying unit 20, a third substrate transfer robot 28 that transfers the substrate between the units 18 and 20 is arranged.

Further, inside the housing 10, a control unit 30 that controls the movement of each device of the substrate processing device is arranged. The control unit 30 also has a function of controlling the movement of the second cleaning unit (board cleaning device) 18.

In the present embodiment, as the first cleaning unit 16, a roll cleaning unit that cleans the substrate by rubbing roll-shaped extending roll cleaning members on both the front and back surfaces of the substrate in the presence of a cleaning liquid is used. The first cleaning unit (roll cleaning unit) 16 is configured to be used in combination with megasonic cleaning in which ultrasonic waves of around 1 MHz are applied to the cleaning liquid and the acting force due to the vibration acceleration of the cleaning liquid is applied to the fine particles adhering to the substrate surface. ing.

Further, the substrate cleaning device of the present invention is used as the second cleaning unit 18. Further, as the drying unit 20, a spin drying unit is used which holds the substrate, ejects IPA steam from a moving nozzle to dry the substrate, rotates the substrate at a higher speed, and dries the substrate by centrifugal force. The cleaning unit may have a two-stage upper and lower structure in which the cleaning units 16 and 18 are arranged in two upper and lower stages. In this case, the cleaning unit has two upper and lower substrate processing units.

FIG. 2 is a perspective view of the substrate cleaning device (board cleaning unit) according to the present embodiment, and FIG. 3 is a plan view of the substrate cleaning device (board cleaning unit) according to the present embodiment.

As shown in FIGS. 2 and 3, the substrate cleaning apparatus (second cleaning unit) 18 of the present embodiment is erected on the side of the cleaning tank 40 surrounding the substrate W and the processing tank 40. A rotatable support shaft 42 and a swing arm 44 extending in the horizontal direction with a base connected to the upper end of the support shaft 42 are provided. In the cleaning tank 40, the substrate W is held by a chuck or the like and is configured to rotate by the rotation of the chuck or the like. A two-fluid nozzle 46 is attached to the free end (tip) of the swing arm 44 so as to be vertically movable.

The two-fluid nozzle 46 is connected to a carrier gas supply line 50 that supplies a carrier gas such as _{N 2} gas and a cleaning liquid supply line 52 that supplies a cleaning liquid such as _{pure water or CO 2 gas dissolved water.} By ejecting a carrier gas such as _{N 2} gas supplied to the inside of the 46 _{and a cleaning liquid such as pure water or CO 2} gas dissolved water from the fluid nozzle 46 at high speed, the cleaning liquid becomes minute droplets (mist) in the carrier gas. A two-fluid jet stream that exists as is generated. By ejecting the two-fluid jet flow generated by the fluid nozzle 46 toward the surface of the rotating substrate W and causing it to collide, the surface of the substrate using the shock wave generated by the collision of the minute droplets with the surface of the substrate Particles and the like can be removed (cleaned).

The support shaft 42 is connected to a motor 54 as a drive mechanism that swings the swing arm 44 around the support shaft 42 by rotating the support shaft 42.

In this example, a pencil-type cleaning tool 60 made of, for example, a PVA sponge is attached to the tip of the swing arm 44 so as to be vertically movable and rotatable. Further, a rinse liquid supply nozzle 62 for supplying the rinse liquid and a chemical liquid supply nozzle 64 for supplying the chemical liquid are arranged on the surface of the substrate W which is located above the side of the cleaning tank 40 and is held by a chuck or the like and is rotating. Has been done. While the lower end of the pencil-type washer 60 is brought into contact with the surface of the rotating substrate W with a predetermined pressing force, the pencil-type washer 60 is moved by the swing of the swing arm 44, and at the same time, is brought to the surface of the substrate W. By supplying a rinsing solution or a chemical solution, the surface of the substrate W is contact-cleaned. The contact cleaning of the surface of the substrate W is a process performed as needed and is not always necessary.

As shown in FIG. 3, the fluid nozzle 46 is located above the center O of the substrate W and above the displacement point B separated from the center O by a predetermined distance from the offset position A as the swing arm 44 swings. The surface of the substrate W is cleaned by moving along the arc-shaped movement locus to the cleaning end position C outside the outer peripheral portion of the substrate W through the position. At the time of this cleaning, a two-fluid jet stream in which the cleaning liquid exists as minute droplets (mist) in the carrier gas is ejected from the fluid nozzle 46 toward the surface of the rotating substrate W. Note that FIG. 3 shows a state in which the fluid nozzle 46 is located above the displacement point B.

Here, the configuration of the substrate cleaning apparatus (board cleaning unit) will be described in more detail with reference to the drawings. FIG. 4 is a side view for explaining the configuration of the substrate cleaning apparatus (board cleaning unit) of the present embodiment.

As shown in FIG. 4, the substrate cleaning device includes a substrate holding mechanism 70 that holds the substrate W horizontally, a motor (rotating mechanism) 72 that rotates the substrate W around its central axis via the substrate holding mechanism 70, and a motor (rotating mechanism) 72. It includes a two-fluid nozzle 46 that ejects a two-fluid jet toward the surface of the rotating substrate W, and a specific resistance adjusting mechanism 74 that adjusts the specific resistance value of the cleaning liquid supplied to the two-fluid nozzle 46. The washing liquid, for example, CO ₂ water to pure water were preliminarily mixed to ionize the CO ₂ gas is used. The resistivity adjusting mechanism 74 can adjust the resistivity value of _{CO 2} water, for example, in the range of 0.1 MΩcm to 18 MΩcm. As the specific resistance adjusting mechanism 74, a known one can be used. In this case, the ejection speed of the two-fluid jet is at least 200 m / sec or more, preferably 250 m / sec or more. That is, this substrate cleaning device is a substrate cleaning device for high-speed 2FJ cleaning.

Further, as shown in FIG. 4, this substrate cleaning device includes a rinse liquid supply nozzle 62 that supplies a rinse liquid toward the surface of the substrate W, and a chemical liquid supply nozzle 64 that supplies the chemical liquid toward the surface of the substrate. ing. The rinse liquid supply nozzle 62 is _{configured to be able to supply the cleaning liquid (CO 2} water) to the surface of the substrate. Further, as the chemical solution supplied from the chemical solution supply nozzle 64, a conductive chemical solution is used.

Here, the flow of processing when cleaning the substrate W using the substrate cleaning device will be described. In this substrate cleaning device, when the substrate W is first carried in, a conductive chemical solution is supplied to the surface of the substrate W from the chemical solution supply nozzle 64, and then a two-fluid jet is ejected from the two-fluid nozzle 46 to eject the substrate. Two-fluid cleaning of W is performed. The cleaning liquid (CO ₂ water) used at this time is
The specific resistance adjusting mechanism 74 adjusts the specific resistance so as to be small. It is desirable to continue supplying the conductive chemical solution from the chemical solution supply nozzle 64 during the two-fluid cleaning. Then, after the two-fluid cleaning is completed, the rinsing liquid and the cleaning liquid (CO ₂ water) are supplied from the rinsing supply nozzle 62 to the surface of the substrate W, and the chemical liquid is washed away.

5 and 7 are explanatory views of the charge suppressing effect of the substrate cleaning device of the present embodiment. In FIG. 5, _{an example in which the specific resistance of the cleaning liquid (CO 2} water) is set large (for example, an example set in 18 MΩcm) is shown by a broken line, _{and an example in which the specific resistance of the cleaning liquid (CO 2} water) is set small (for example). For example, 0
.. An example of setting to 1 MΩcm) is shown by a solid line. Further, in FIG. 6, an example in which the flow rate of the cleaning liquid supplied to the surface of the substrate W is set small (an example in which the cleaning liquid (CO2 water) is not supplied from the rinse supply nozzle 62) is shown by a broken line. An example in which the flow rate of the cleaning liquid supplied to the surface is set to a large value (an example in which the cleaning liquid (CO2 water) is also supplied from the rinse supply nozzle 62) is shown by a solid line. Further, in FIG. 7, an example in which the conductive chemical solution is not supplied to the surface of the substrate W is shown by a broken line, and an example in which the conductive chemical solution is supplied to the surface of the substrate W is shown by a solid line. ..

According to the substrate cleaning device of the first embodiment as described above, the specific resistance value of the _{cleaning liquid (for example, CO 2} water) supplied to the two-fluid nozzle 46 is adjusted by using the specific resistance adjusting mechanism 74. Can be done. The smaller the specific resistance value of the cleaning liquid supplied to the two-fluid nozzle 46, the more the charge amount of the droplets ejected from the two-fluid nozzle 46 can be suppressed. As a result, even in high-speed 2FJ cleaning, it is possible to suppress the surface of the substrate to be cleaned from being charged, and it is possible to suppress the charged particles from adhering to the substrate.

In the present embodiment, not only the cleaning liquid is supplied to the surface of the substrate from the two-fluid nozzle 46, but also the cleaning liquid is supplied to the surface of the substrate from the rinse liquid supply nozzle 62, so that the cleaning liquid supplied to the surface of the substrate is supplied. Flow rate can be increased. The larger the flow rate of the cleaning liquid supplied to the surface of the substrate, the more the amount of charge on the surface of the substrate can be suppressed. As a result, even in high-speed 2FJ cleaning, it is possible to suppress the surface of the substrate to be cleaned from being charged, and it is possible to suppress the charged particles from adhering to the substrate.

Further, in the present embodiment, since the conductive chemical solution is supplied to the surface of the substrate from the chemical solution supply nozzle 64, the amount of charge on the surface of the substrate can be suppressed. As a result, even in high-speed 2FJ cleaning, it is possible to suppress the surface of the substrate to be cleaned from being charged, and it is possible to suppress the charged particles from adhering to the substrate.

Further, in the present embodiment, the cleaning target is high-speed 2FJ cleaning (2FJ cleaning in which the speed of the droplet ejected as a two-fluid jet is at least 200 m / sec or more, preferably 250 m / or more). It is possible to suppress the surface of the substrate W from being charged.

(Second Embodiment)
Next, the substrate cleaning apparatus according to the second embodiment of the present invention will be described. Here, the substrate cleaning apparatus of the second embodiment will be mainly described as being different from the first embodiment. Unless otherwise specified here, the configuration and operation of this embodiment are the same as those of the first embodiment.

FIG. 8 is a side view for explaining the configuration of the substrate cleaning apparatus (board cleaning unit) of the present embodiment. As shown in FIG. 8, the substrate cleaning device of the present embodiment includes a flow rate adjusting mechanism 76 that adjusts the flow rate of the cleaning liquid supplied to the two-fluid nozzle 46. As the flow rate adjusting mechanism 76, a known one can be used, and the flow rate adjusting mechanism 76 is composed of, for example, a flow rate valve or the like. Also in this case, the ejection speed of the two-fluid jet is at least 200 m / sec or more, preferably 250 m / sec or more. That is, this substrate cleaning device is also a substrate cleaning device for high-speed 2FJ cleaning.

The substrate cleaning device of the second embodiment also has the same effects as those of the first embodiment. That is, as shown in FIGS. 5 to 7, by forming the two-fluid nozzle 46 with a conductive material, it is possible to suppress the charge amount of the droplet ejected from the two-fluid nozzle 46 as a two-fluid jet. As a result, even in high-speed 2FJ cleaning, it is possible to suppress the surface of the substrate W to be cleaned from being charged, and it is possible to suppress the charged particles from adhering to the substrate W.

In the present embodiment, the flow rate of the cleaning liquid supplied to the two-fluid nozzle 46 can be adjusted by using the flow rate adjusting mechanism 76. The larger the flow rate of the cleaning liquid supplied to the two-fluid nozzle 46, the more the charge amount of the droplets ejected from the two-fluid nozzle 46 can be suppressed. As a result, even in high-speed 2FJ cleaning, it is possible to suppress the surface of the substrate to be cleaned from being charged, and it is possible to suppress the charged particles from adhering to the substrate.

Although the embodiments of the present invention have been described above by way of illustration, the scope of the present invention is not limited to these, and can be changed or modified according to an object within the scope described in the claims. be.

As described above, the substrate cleaning apparatus according to the present invention has an effect that the surface of the substrate to be cleaned can be suppressed from being charged even in high-speed 2FJ cleaning, and is used for cleaning semiconductor wafers and the like. , Useful.

10 Housing 12 Load ports 14a to 14d Polishing unit 16 1st cleaning unit 18 2nd cleaning unit (board cleaning device)
22 1st board transfer robot 24 Board transfer unit 26 2nd board transfer robot 28 3rd board transfer robot 30 Control unit 40 Cleaning tank 42 Support shaft 44 Swing arm 46 Fluid nozzle 50 Carrier gas supply line 52 Cleaning liquid supply line 54 Motor 60 Pencil Mold cleaning tool 62 Rinse liquid supply nozzle 64 Chemical liquid supply nozzle 70 Board holding mechanism 72 Motor (rotation mechanism)
74 resistivity adjustment mechanism 76 Flow rate adjustment mechanism W board

Claims (9)

A board holding mechanism that holds the board and
A cleaning liquid supply line that can supply cleaning liquid,
A carrier gas supply line that can supply carrier gas and
A specific resistance adjusting mechanism that is connected to the cleaning liquid supply line _{and controls the amount of CO 2} gas dissolved in the cleaning liquid to adjust the specific resistance value of the cleaning liquid in the range of 0.1 MΩcm to 18 MΩ cm. The specific resistance adjusting mechanism that suppresses the amount of charge on the surface of the substrate during two-fluid jet cleaning by reducing the specific resistance value of
A flow rate adjusting mechanism that is connected to the specific resistance adjusting mechanism in the cleaning liquid supply line and adjusts the flow rate of the cleaning liquid whose specific resistance value is adjusted by the specific resistance adjusting mechanism, and by increasing the flow rate of the cleaning liquid. , The flow rate adjusting mechanism that suppresses the amount of charge on the surface of the substrate during two-fluid jet cleaning , and
The carrier gas is a droplet containing a cleaning liquid whose specific resistance value and flow rate are adjusted toward the surface of the substrate which is connected to the cleaning liquid supply line and the carrier gas supply line and is held by the substrate holding mechanism. A two-fluid nozzle that performs high-speed two-fluid jet cleaning of the substrate by ejecting at an ejection speed of 200 m / sec or more.
A board cleaning device. The substrate cleaning apparatus according to claim 1, wherein the cleaning liquid is CO _{2 water.} The washing liquid is a CO ₂ water ionized previously contaminating the CO ₂ gas in pure water, the substrate cleaning apparatus according to claim 1. A board holding mechanism that holds the board and
A cleaning liquid supply line that can supply cleaning liquid,
A carrier gas supply line that can supply carrier gas and
A specific resistance adjusting mechanism that is connected to the cleaning liquid supply line and adjusts the specific resistance value of the cleaning liquid in the range of 0.1 MΩcm to 18 MΩ cm. By reducing the specific resistance value of the cleaning liquid, a two-fluid jet cleaning is performed. The specific resistance adjusting mechanism that suppresses the amount of charge on the surface of the substrate ,
A flow rate adjusting mechanism that is connected to the specific resistance adjusting mechanism in the cleaning liquid supply line and adjusts the flow rate of the cleaning liquid whose specific resistance value is adjusted by the specific resistance adjusting mechanism, and by increasing the flow rate of the cleaning liquid. , The flow rate adjusting mechanism that suppresses the amount of charge on the surface of the substrate during two-fluid jet cleaning , and
The carrier gas is a droplet containing a cleaning liquid whose specific resistance value and flow rate are adjusted toward the surface of the substrate which is connected to the cleaning liquid supply line and the carrier gas supply line and is held by the substrate holding mechanism. A two-fluid nozzle that performs high-speed two-fluid jet cleaning of the substrate by ejecting at an ejection speed of 200 m / sec or more.
A chemical solution supply nozzle that supplies a conductive chemical solution toward the surface of the substrate, and a chemical solution supply nozzle.
A board cleaning device. A substrate provided with a first cleaning unit for rubbing roll-shaped extending roll cleaning members on both the front and back surfaces of the substrate in the presence of a cleaning liquid to clean the substrate, and further cleaning the substrate treated by the first cleaning unit. It ’s a cleaning device,
The substrate cleaning device is
A substrate holding mechanism for holding the substrate,
An arm that can swing on the substrate held by the substrate holding mechanism,
A cleaning tool attached to the tip of the arm to clean the substrate,
It is attached to the tip of the arm and is connected to the cleaning liquid supply line and the carrier gas supply line, and when the arm swings, droplets containing the cleaning liquid are ejected together with the carrier gas toward the surface of the substrate. 2 fluid nozzles and
With
At the tip of the arm, the two-fluid nozzle is arranged on the outer peripheral side of the substrate, and the cleaning tool is arranged on the center side of the substrate.
The cleaning liquid supply line has
A specific resistance adjusting mechanism that adjusts the specific resistance value of the cleaning liquid, and is a specific resistance adjusting mechanism that suppresses the amount of charge on the surface of the substrate during two-fluid jet cleaning by reducing the specific resistance value of the cleaning liquid. When,
A flow rate adjusting mechanism that adjusts the flow rate of the cleaning liquid whose specific resistance value has been adjusted by the specific resistance adjusting mechanism. By increasing the flow rate of the cleaning liquid, the amount of charge on the surface of the substrate during two-fluid jet cleaning With the flow rate adjusting mechanism that suppresses
Is provided,
The two-fluid nozzle is a substrate cleaning apparatus that ejects droplets containing a cleaning liquid having an adjusted specific resistance value and the flow rate together with the carrier gas to perform two-fluid jet cleaning of the substrate. The substrate cleaning device according to claim 5, wherein the cleaning tool is configured to be movable up and down with respect to the arm. One end of the arm is fixed to the support shaft and the other end is the tip end portion.
The substrate cleaning device according to claim 5, further comprising a drive mechanism for rotating the support shaft to swing the arm around the support shaft. In the presence of the cleaning liquid, the first cleaning unit for cleaning the substrate by rubbing the roll cleaning member extending in a roll shape on both the front and back surfaces of the substrate.
A second cleaning unit including the substrate cleaning device according to any one of claims 1 to 7, which further cleans the substrate treated by the first cleaning unit.
A drying unit that dries the washed substrate,
A board processing device equipped with. It is equipped with a housing, a polishing unit for polishing the substrate, and a substrate transfer robot for transporting the substrate.
The substrate processing apparatus according to claim 8, wherein the polishing unit, the first cleaning unit, the second cleaning unit, the drying unit, and the substrate transfer robot are housed in the housing.

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