TW201820404A - Substrate processing apparatus and substrate processing method enabling the recovery of processing liquid from the substrate according to the liquid type even if the substrate is rotated at a low speed with the first or second processing liquid being supplied to the rotatably supported substrate - Google Patents
Substrate processing apparatus and substrate processing method enabling the recovery of processing liquid from the substrate according to the liquid type even if the substrate is rotated at a low speed with the first or second processing liquid being supplied to the rotatably supported substrate Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3092—Recovery of material; Waste processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
Description
[0001] 本發明,係關於對可旋轉地被支撐之基板供給顯像液等的處理液,而處理該基板之基板處理裝置及基板處理方法。[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate by supplying a processing liquid such as a developing solution to a substrate that is rotatably supported.
[0002] 在例如半導體元件之製造程序的光微影工程中,係例如依序進行如下述處理等,在晶圓上形成預定的光阻圖案:光阻塗佈處理,將光阻液塗佈於作為基板的半導體晶圓(以下,稱為「晶圓」。)上而形成光阻膜;曝光處理,將預定圖案曝光於該光阻膜;加熱處理(後曝光烘烤(post exposure baking)),在曝光後,促進光阻膜內的化學反應;顯像處理,以顯像液來將已曝光的光阻膜進行顯像。 [0003] 作為光阻液,係存在有:正型光阻液,在顯像處理時,去除曝光部;及負型光阻液,在顯像處理時,去除未曝光部。又,作為顯像液,係存有在各別與正型光阻液及負型光阻液對應的正型顯像液及負型顯像液。 [0004] 在專利文獻1中,係揭示有一種以同一模組進行正型顯像液所致之顯像處理與負型顯像液所致之顯像處理的顯像處理裝置。該顯像處理裝置,係如圖15及圖16所示,具備有:回收罩杯501,回收伴隨著晶圓W之旋轉而飛散的顯像液。回收罩杯501,係具有:罩杯本體502;及可動罩杯503,可對該罩杯本體502亦即晶圓W上下方向地移動。在專利文獻1的顯像處理裝置中,係如圖15所示,在正型顯像處理之際,使可動罩杯503上升,藉此,使從旋轉之晶圓W飛散的正型顯像液穿過可動罩杯503之下側,並導入罩杯本體502的內側流路504。又,如圖16所示,在負型顯像處理之際,使可動罩杯503下降,藉此,使從旋轉之晶圓W飛散的負型顯像液穿過可動罩杯503之上側,並導入罩杯本體502的外側流路505。藉此,不使正型顯像液的排液與負型顯像液的排液混合而各別進行回收。作為各別進行回收的目的,係可列舉出再利用。 [0005] 又,作為顯像處理的方式,係提議一種顯像方法,其具備有:將曝光後之基板水平地保持於基板保持部的工程;從顯像液噴嘴將顯像液供給至基板之一部分而形成積液的工程;使基板旋轉的工程;以使旋轉的基板中之顯像液的供給位置沿著該基板之徑方向移動的方式,使顯像液噴嘴移動,從而使積液在基板之整面擴展的工程;及與使積液在基板之整面擴展的工程並行,並且與顯像液噴嘴一起移動,使接觸部接觸於積液的工程,該接觸部,係與基板相對向的面小於基板的表面(專利文獻2)。在該顯像方法中,係在使顯像液的積液於基板之整面擴展的工程中,基板之旋轉速度,係成為100rpm以下。 [先前技術文獻] [專利文獻] [0006] [專利文獻1] 日本特開2014-75575號公報 [專利文獻2] 日本特開2015-53467號公報[0002] In a photolithography process such as a manufacturing process of a semiconductor element, a predetermined photoresist pattern is formed on a wafer by sequentially performing processes such as the following: photoresist coating process, and photoresist liquid coating A photoresist film is formed on a semiconductor wafer (hereinafter referred to as a “wafer”) as a substrate; an exposure process, which exposes a predetermined pattern to the photoresist film; and a heat treatment (post exposure baking) ), After exposure, to promote the chemical reaction in the photoresist film; development processing, using a developer to develop the exposed photoresist film. [0003] As the photoresist liquid, there are: a positive photoresist liquid that removes an exposed portion during development processing; and a negative photoresist liquid that removes an unexposed portion during development processing. In addition, as the developing solution, a positive type developing solution and a negative type developing solution corresponding to the positive type resist and the negative type resist are stored. [0004] Patent Document 1 discloses a development processing device that performs development processing by a positive-type developing solution and development processing by a negative-type developing solution in the same module. As shown in FIGS. 15 and 16, this development processing apparatus is provided with a recovery cup 501 that recovers the development liquid that scatters as the wafer W rotates. The recovery cup 501 includes a cup main body 502 and a movable cup 503 that can move the cup main body 502, that is, the wafer W in the vertical direction. In the development processing apparatus of Patent Document 1, as shown in FIG. 15, during the positive type development processing, the movable cup 503 is raised to thereby disperse the positive type development liquid scattered from the rotating wafer W. It passes through the lower side of the movable cup 503 and is introduced into the inner flow path 504 of the cup body 502. As shown in FIG. 16, during the negative development processing, the movable cup 503 is lowered, and the negative developing liquid scattered from the rotating wafer W is passed through the upper side of the movable cup 503 and introduced. The outer flow path 505 of the cup body 502. Thereby, the discharged liquid of the positive-type developing liquid and the discharged liquid of the negative-type developing liquid are not mixed and recovered separately. Examples of the purpose of recycling are recycling. [0005] As a method of developing processing, a developing method is proposed, which includes a process of horizontally holding the exposed substrate on a substrate holding portion, and supplying the developing liquid from a developing liquid nozzle to the substrate. Part of the process of forming liquid accumulation; the process of rotating the substrate; moving the supply position of the developing liquid in the rotating substrate along the radial direction of the substrate, moving the developing liquid nozzle, thereby making the liquid accumulation The process of expanding on the entire surface of the substrate; and the process of expanding the fluid on the entire surface of the substrate in parallel with the process of moving with the imaging liquid nozzle to bring the contact portion into contact with the fluid, the contact portion is related to the substrate The facing surface is smaller than the surface of the substrate (Patent Document 2). In this developing method, in the process of expanding the accumulated liquid of the developing solution over the entire surface of the substrate, the rotation speed of the substrate is 100 rpm or less. [Prior Art Document] [Patent Document] [0006] [Patent Document 1] Japanese Patent Laid-Open No. 2014-75575 [Patent Document 2] Japanese Patent Laid-Open No. 2015-53467
[本發明所欲解決之課題] [0007] 然而,在以同一模組進行正型顯像液所致之顯像處理與負型顯像液所致之顯像處理的情況下,吾人考慮採用揭示於專利文獻2之方式來作為顯像處理之方式的構成。但是,在該構成中,當採用揭示於專利文獻1之方法等的以往方法來作為各別回收正型顯像液之排液與負型顯像液之排液的方法時,存在有下述的問題。 [0008] 亦即,如上述般,在揭示於專利文獻2之顯像處理的方式中,係存在有如下述之工程:塗佈有顯像液之晶圓的旋轉速度緩慢至100rpm以下。在有該緩慢工程的情況下,如圖16般,存在有如下述之情形:即便使可動罩杯503下降,亦無法使負型顯像液導入外側流路505而導入正型顯像系統用之內側流路504,從而導致正型顯像液之排液與負型顯像液之排液被混合。 [0009] 作為上述的混合發生之機制,係考慮例如以下者。 吾人認為,如圖17所示,當晶圓W之旋轉速度較緩慢時,晶圓W上的負型顯像液D不會被甩掉而落下至罩杯本體502上,並從罩杯本體502與可動罩杯503之間被導入正型顯像系統用之內側流路504。 又,吾人認為,如圖18所示,當晶圓W之旋轉速度較緩慢時,負型顯像液D會迴繞至晶圓W的背面。於像這樣的狀態下,當甩掉負型顯像液D時,與一般情況相比,被甩掉之顯像液的軌道會變低。因此,所甩掉之顯像液碰撞到可動罩杯503之內周端或罩杯本體502的結果,從罩杯本體502與可動罩杯503之間被導入正型顯像系統用之內側流路504。 [0010] 吾人認為,即便為以2種類之處理液且同一模組來進行各別的基板處理,並各別回收各處理液的其他基板處理裝置,亦存在有同樣問題。 [0011] 本發明,係有鑑於該點而進行研究者,以下述者為其目的:在對可旋轉地被支撐之基板供給第1處理液或第2處理液而處理基板,並且根據種類回收來自基板的處理液之基板處理裝置中,即便為在基板處理包含有使基板低速旋轉之工程的情況,亦可按種類回收來自基板的處理液。 [用以解決課題之手段] [0012] 為了達成前述之目的,本發明,提供一種基板處理裝置,係對可繞垂直軸旋轉地被支撐之基板供給第1處理液或第2處理液而處理前述基板,並且以回收罩杯回收來自前述基板的處理液,該基板處理裝置,其特徵係,前述回收罩杯,係具備有:罩杯本體,具有:環狀之外周壁,比前述基板大;環狀之內部構造體,由朝向外周側逐漸變低之第1傾斜面形成有上端的外周面;及底壁,前述第1處理液之回收口被設置於內周側,前述第2處理液之回收口被設置於外周側;及可動罩杯,在上端具有分配部,並且被設置為可在前述罩杯本體的前述外周壁與前述內部構造體之間上下移動,該分配部,係由朝向外周側逐漸變低之第2傾斜面形成有上面,以使該可動罩杯上升的方式,將前述第1處理液從前述分配部與前述內部構造體之間引導至前述第1處理液的回收口,並以使前述可動罩杯下降的方式,將前述第2處理液從前述分配部與前述外周壁之間引導至前述第2處理液的回收口,前述罩杯本體,係在前述第1傾斜面之外周側端具有階差,在前述可動罩杯下降時,前述分配部之內周側端下降至前述階差,前述分配部之上面變得比形成前述階差之上側的面低,前述分配部之前述第2傾斜面的角度,係比前述第1傾斜面的角度大。 [0013] 前述分配部之前述第2傾斜面,係外周側的傾斜角度比內周側大為較佳。 [0014] 前述分配部之內周側端,係被形成為朝向內周側逐漸變薄為較佳。 [0015] 前述罩杯本體,係具有下述者為較佳:凹處,被形成於比前述第1傾斜面的前述階差更內周側;及連通路徑,連通該凹處與排液路徑。 [0016] 在比前述第1傾斜面的前述階差更內周側具有彈性構件,該彈性構件,係具有與前述第1傾斜面連續的上面,並且朝向外周側延伸而覆蓋前述可動罩杯下降時之前述分配部之內周側端的上方為較佳。 [0017] 根據另一觀點之本發明,提供一種基板處理方法,係對可繞垂直軸旋轉地被支撐之基板供給第1處理液或第2處理液而處理前述基板,並且以回收罩杯回收來自前述基板的處理液,該基板處理方法,其特徵係,前述回收罩杯,係具備有:罩杯本體,具有:環狀之外周壁,比前述基板大;環狀之內部構造體,由朝向外周側逐漸變低之第1傾斜面形成有上端的外周面;及底壁,前述第1處理液之回收口被設置於內周側,前述第2處理液之回收口被設置於外周側;及可動罩杯,在上端具有分配部,並且被設置為可在前述罩杯本體的前述外周壁與前述內部構造體之間上下移動,該分配部,係由朝向外周側逐漸變低之第2傾斜面形成有上面,前述罩杯本體,係在前述第1傾斜面之外周側端具有階差,前述分配部之前述第2傾斜面的角度,係比前述第1傾斜面的角度大,該基板處理方法,係在以前述第1處理液處理前述基板之際,包含有:使前述可動罩杯上升,並使前述分配部之內周側端位於比前述基板上方的工程;將前述第1處理液供給至前述基板的工程;及使前述基板旋轉,將該基板上的前述第1處理液從前述分配部與前述內部構造體之間引導至前述第1處理液之回收口的工程,在以前述第2處理液處理前述基板之際,包含有:使前述可動罩杯下降,並使前述分配部之內周側端下降至前述階差,前述分配部之上面變得比形成前述階差之上側的面低的工程;將前述第2處理液供給至前述基板的工程;及使前述基板旋轉,將該基板上的前述第2處理液從前述分配部與前述外周壁之間引導至前述第2處理液之回收口的工程。 [發明之效果] [0018] 根據本發明,在對可旋轉地被支撐之基板供給第1處理液或第2處理液而處理基板,並且根據種類回收來自基板的處理液之基板處理裝置中,即便為在基板處理包含有使基板低速旋轉之工程的情況,亦可按種類回收來自基板的處理液。[Problems to be Solved by the Present Invention] [0007] However, in the case where the development processing caused by the positive developing solution and the development processing caused by the negative developing solution are performed in the same module, we consider using The configuration disclosed in Patent Document 2 is a configuration of a development processing method. However, in this configuration, when a conventional method such as the method disclosed in Patent Document 1 is adopted as a method for separately recovering the drainage of the positive-type developing solution and the drainage of the negative-type developing solution, there are the following The problem. [0008] That is, as described above, in the development processing method disclosed in Patent Document 2, there is a process in which the rotation speed of the wafer coated with the development liquid is slow to 100 rpm or less. In the case of this slow process, as shown in FIG. 16, there are cases in which even if the movable cup 503 is lowered, a negative-type developing liquid cannot be introduced into the outer flow path 505 and a positive-type developing system is used. The inner flow path 504 causes the discharge of the positive-type developing liquid and the discharge of the negative-type developing liquid to be mixed. [0009] As a mechanism for the above-mentioned mixing to occur, for example, the following are considered. In my opinion, as shown in FIG. 17, when the rotation speed of the wafer W is relatively slow, the negative developing solution D on the wafer W will not be thrown off and fall onto the cup body 502. Between the movable cups 503, an inner flow path 504 for a positive development system is introduced. By the way, in my opinion, as shown in FIG. 18, when the rotation speed of the wafer W is relatively slow, the negative-type developing solution D will rewind to the back of the wafer W. In such a state, when the negative-type developing solution D is thrown away, the track of the dropped-out developing solution becomes lower than in the general case. Therefore, as a result of the dropped developing liquid colliding with the inner peripheral end of the movable cup 503 or the cup body 502, an inner flow path 504 for a positive-type development system is introduced from between the cup body 502 and the movable cup 503. [0010] I believe that the same problem exists even in other substrate processing apparatuses that process two substrates with two types of processing liquids and the same module, and collect the processing liquids separately. [0011] The present invention has been made in view of this point, and has as its object the purpose of processing a substrate by supplying a first processing liquid or a second processing liquid to a substrate that is rotatably supported, and recovering the substrate according to the type. In a substrate processing apparatus for processing liquid from a substrate, even when the substrate processing includes a process of rotating the substrate at a low speed, the processing liquid from the substrate can be recovered by type. [Means to Solve the Problem] [0012] In order to achieve the foregoing object, the present invention provides a substrate processing apparatus that supplies a first processing liquid or a second processing liquid to a substrate that is rotatably supported about a vertical axis and processes the substrate. The substrate is processed by a recovery cup, and the processing liquid from the substrate is recovered. The substrate processing apparatus is characterized in that the recovery cup is provided with a cup body having a ring-shaped outer peripheral wall larger than the substrate; The internal structure has an upper peripheral surface formed from a first inclined surface that gradually decreases toward the outer peripheral side; and a bottom wall, the recovery port of the first treatment liquid is provided on the inner peripheral side, and the recovery of the second treatment liquid is provided. The mouth is provided on the outer peripheral side; and the movable cup has a distribution portion at an upper end, and is provided to be movable up and down between the outer peripheral wall of the cup body and the internal structure, and the distribution portion is gradually moved toward the outer peripheral side. The lowered second inclined surface is formed with an upper surface to guide the first treatment liquid from between the distribution portion and the internal structure so that the movable cup is raised. The recovery port of the first treatment liquid, and guide the second treatment liquid from between the distribution portion and the outer peripheral wall to the recovery port of the second treatment liquid, the cup body, so that the movable cup is lowered, There is a step at the outer peripheral end of the first inclined surface. When the movable cup is lowered, the inner peripheral end of the distribution portion is lowered to the step, and the upper surface of the distribution portion becomes higher than the upper side of the step. The angle of the surface is low, and the angle of the second inclined surface of the distribution portion is greater than the angle of the first inclined surface. [0013] It is preferable that the inclination angle of the second inclined surface of the distribution portion is larger on the outer peripheral side than on the inner peripheral side. [0014] It is preferable that the inner peripheral side end of the distribution portion is formed to be gradually thinner toward the inner peripheral side. [0015] It is preferable that the cup body has a recess formed at an inner peripheral side than the step of the first inclined surface, and a communication path that communicates the recess with the drainage path. [0016] An elastic member is provided on the inner peripheral side than the step of the first inclined surface. The elastic member has an upper surface continuous with the first inclined surface and extends toward the outer peripheral side to cover the movable cup when descending. The above-mentioned inner peripheral side end of the distribution portion is preferably above. [0017] According to another aspect of the present invention, a substrate processing method is provided in which a first processing liquid or a second processing liquid is supplied to a substrate rotatably supported about a vertical axis to process the substrate, and the substrate is recovered from a recovery cup. The substrate processing liquid and the substrate processing method are characterized in that the recovery cup is provided with a cup body having a ring-shaped outer peripheral wall larger than the substrate and a ring-shaped inner structure body directed toward the outer peripheral side. The first inclined surface that gradually becomes lower has an outer peripheral surface at the upper end; and a bottom wall, the recovery port of the first treatment liquid is provided on the inner peripheral side, and the recovery port of the second treatment liquid is provided on the outer peripheral side; and movable The cup has a distribution portion at an upper end, and is provided to be movable up and down between the outer peripheral wall of the cup body and the internal structure. The distribution portion is formed by a second inclined surface that gradually decreases toward the outer peripheral side. In the above, the cup body has a step at the outer peripheral end of the first inclined surface, and the angle of the second inclined surface of the distribution portion is greater than the angle of the first inclined surface. The substrate processing method includes a process of raising the movable cup and placing an inner peripheral side end of the distribution portion above the substrate when the substrate is processed with the first processing liquid. A process of supplying the first processing liquid to the substrate; and rotating the substrate to guide the first processing liquid on the substrate from between the distribution section and the internal structure to a recovery port of the first processing liquid In the process of processing the substrate with the second processing liquid, the process includes lowering the movable cup and lowering an inner peripheral side end of the distribution portion to the level difference, and the upper surface of the distribution portion becomes larger than that in which the foregoing is formed. A process in which the surface above the step is low; a process in which the second processing liquid is supplied to the substrate; and a process in which the substrate is rotated to guide the second processing liquid on the substrate from between the distribution portion and the outer peripheral wall The process up to the recovery port of the second treatment liquid. [Effects of the Invention] According to the present invention, in a substrate processing apparatus that supplies a first processing liquid or a second processing liquid to a substrate rotatably supported to process the substrate, and recovers the processing liquid from the substrate according to the type, Even when the substrate processing includes a process of rotating the substrate at a low speed, the processing liquid from the substrate can be recovered by type.
[0020] 以下,說明關於本發明之實施形態。另外,在本說明書及圖面中,對於實質上具有同一機能構成的要素,係賦予同一符號而省略重複說明。 [0021] 圖1,係示意地表示具備了本實施形態之顯像處理裝置之基板處理系統1之構成之概略的平面說明圖。圖2及圖3,係各別示意地表示基板處理系統1之內部構成之概略之各別的正視圖與後視圖。 [0022] 基板處理系統1,係如圖1所示,具有將下述者一體連接的構成:匣盒站10,將收容有複數片晶圓W的匣盒C搬入搬出;處理站11,具備有對晶圓W施予預定處理的複數個各種處理裝置;及介面站13,在與鄰接於處理站11的曝光裝置12之間,進行晶圓W之收授。 [0023] 在匣盒站10,係設置有匣盒載置台20。在匣盒載置台20,係設置有:複數個匣盒載置板21,在對基板處理系統1之外部搬入搬出匣盒C之際,載置匣盒C。 [0024] 在匣盒站10,係如圖1所示,設置有在沿X方向延伸之搬送路徑22上移動自如的晶圓搬送裝置23。晶圓搬送裝置23,係亦沿上下方向及繞垂直軸(θ方向)移動自如,並可在各匣盒載置板21上的匣盒C與後述之處理站11之第3區塊G3的收授裝置之間搬送晶圓W。 [0025] 在處理站11,係設置有具備了各種裝置之複數個例如4個區塊亦即第1區塊G1~第4區塊G4。例如,在處理站11的正面側(圖1之X方向負方向側),係設置有第1區塊G1,在處理站11的背面側(圖1之X方向正方向側、圖面之上側),係設置有第2區塊G2。又,在處理站11的匣盒站10側(圖1之Y方向負方向側),係設置有已述的第3區塊G3,在處理站11的介面站13側(圖1之Y方向正方向側),係設置有第4區塊G4。 [0026] 例如,在第1區塊G1,係如圖2所示,從下方依以下順序配置有複數個液處理裝置,例如:顯像處理裝置30,對晶圓W進行顯像處理;下部反射防止膜形成裝置31,在晶圓W之光阻膜的下層形成反射防止膜(以下稱為「下部反射防止膜」);光阻塗佈裝置32,將光阻液塗佈於晶圓W而形成光阻膜;及上部反射防止膜形成裝置33,在晶圓W之光阻膜的上層形成反射防止膜(以下稱為「上部反射防止膜」)。 [0027] 例如顯像處理裝置30、下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33,係各別沿水平方向排列配置3個。另外,該些顯像處理裝置30、下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33的數量或配置,係可任意選擇。 [0028] 在該些下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33中,係例如進行:旋轉塗佈,將預定塗佈液塗佈於晶圓W上。在旋轉塗佈中,係例如從塗佈噴嘴將塗佈液吐出於晶圓W上,並且使晶圓W旋轉而使塗佈液在晶圓W的表面擴散。另外,關於顯像處理裝置30之構成,係如後所述。 [0029] 例如,在第2區塊G2,係如圖3所示,設置有:複數個熱處理裝置40~43,進行晶圓W之加熱及冷卻這樣的熱處理。 [0030] 例如,在第3區塊G3,係如圖2、圖3所示,從下方依序設置有複數個收授裝置50、51、52、53、54、55、56。又,在第4區塊G4,係如圖3所示,從下方依序設置有複數個收授裝置60、61、62。 [0031] 如圖1所示,在第1區塊G1~第4區塊G4所包圍的區域,係形成有晶圓搬送區域D。在晶圓搬送區域D,係配置有:複數個晶圓搬送裝置70,具有沿例如Y方向、X方向、θ方向及上下方向移動自如的搬送臂。晶圓搬送裝置70,係在晶圓搬送區域D內進行移動,並可在與位於周圍之第1區塊G1、第2區塊G2、第3區塊G3及第4區塊G4內的預定裝置之間搬送晶圓W。 [0032] 又,在晶圓搬送區域D,係如圖3所示,設置有:穿梭搬送裝置80:在第3區塊G3與第4區塊G4之間,直線地搬送晶圓W。 [0033] 穿梭搬送裝置80,係例如沿圖3的Y方向直線地移動自如。穿梭搬送裝置80,係可於支撐了晶圓W的狀態下,沿Y方向移動,並在第3區塊G3的收授裝置52與第4區塊G4的收授裝置62之間搬送晶圓W。 [0034] 如圖1所示,在第3區塊G3的X方向正方向側旁,係設置有晶圓搬送裝置100。晶圓搬送裝置100,係具有沿例如X方向、θ方向及上下方向移動自如的搬送臂。晶圓搬送裝置100,係可於支撐了晶圓W的狀態下,上下地移動,並將晶圓W搬送至第3區塊G3內的各收授裝置。 [0035] 在介面站13,係設置有晶圓搬送裝置110與收授裝置111。晶圓搬送裝置110,係具有沿例如Y方向、θ方向及上下方向移動自如的搬送臂。晶圓搬送裝置110,係例如可將晶圓W支撐於搬送臂,並在第4區塊G4內的各收授裝置、收授裝置111及曝光裝置12之間搬送晶圓W。 [0036] 在以上的基板處理系統1,係如圖1所示,設置有控制部300。控制部300,係例如電腦,具有程式儲存部(未圖示)。在程式儲存部,係儲存有控制基板處理系統1中之晶圓W的處理之程式。又,在程式儲存部,係亦儲存有用以控制上述之各種處理裝置或搬送裝置等的驅動系統之動作,甚至亦控制後述的噴嘴驅動部166、169、172、175或升降部156等而實現基板處理系統1中之後述的顯像處理之程式。另外,前述程式,係亦可為被記錄於例如電腦可讀取之硬碟(HD)、軟碟片(FD)、光碟(CD)、磁光碟(MO)、記憶卡等之電腦可讀取的記憶媒體者,且從該記憶媒體安裝於控制部300者。 [0037] 其次,說明關於使用如上述般所構成之基板處理系統1而進行之晶圓處理的概略。首先,收納了複數個晶圓W的匣盒C被搬入至基板處理系統1的匣盒站10,藉由晶圓搬送裝置23,將匣盒C內之各晶圓W依序搬送至處理站11的收授裝置53。 [0038] 其次,晶圓W,係藉由晶圓搬送裝置70被搬送至第2區塊G2的熱處理裝置40,進行溫度調節處理。其後,晶圓W,係藉由晶圓搬送裝置70被搬送至例如第1區塊G1的下部反射防止膜形成裝置31,在晶圓W上形成下部反射防止膜。其後,晶圓W,係被搬送至第2區塊G2的熱處理裝置41,進行加熱處理。 [0039] 其後,晶圓W,係藉由晶圓搬送裝置70被搬送至第2區塊G2的熱處理裝置42,進行溫度調節處理。其後,晶圓W,係藉由晶圓搬送裝置70被搬送至第1區塊G1的光阻塗佈裝置32,在晶圓W上形成光阻膜。其後,晶圓W,係被搬送至熱處理裝置43,進行預烘烤處理。 [0040] 其次,晶圓W,係被搬送至第1區塊G1的上部反射防止膜形成裝置33,在晶圓W上形成上部反射防止膜。其後,晶圓W,係被搬送至第2區塊G2的熱處理裝置43,進行加熱處理。其後,晶圓W,係藉由晶圓搬送裝置70被搬送至第3區塊G3的收授裝置56。 [0041] 其次,晶圓W,係藉由晶圓搬送裝置100被搬送至收授裝置52,並藉由穿梭搬送裝置80被搬送至第4區塊G4的收授裝置62。其後,晶圓W,係藉由介面站13的晶圓搬送裝置110被搬送至曝光裝置12,以預定圖案進行曝光處理。 [0042] 其次,晶圓W,係藉由晶圓搬送裝置70被搬送至熱處理裝置40,進行曝光後烘烤處理。藉此,藉由在光阻膜的曝光部產生的酸,進行去保護反應。然後,晶圓W,係藉由晶圓搬送裝置70被搬送至顯像處理裝置30,進行顯像處理。 [0043] (第1實施形態) 其次,使用圖4及圖5,說明關於本發明之第1實施形態之顯像處理裝置30的構成。顯像處理裝置30,係如圖4所示,具有可密閉內部的處理容器130。在處理容器130的側面,係形成有晶圓W的搬入搬出口(未圖示)。 [0044] 在處理容器130內,係設置有保持晶圓W而使其繞垂直軸O旋轉的旋轉夾盤140。旋轉夾盤140,係可藉由例如馬達等的夾盤驅動部141而旋轉至預定速度。又,在夾盤驅動部141,係設置有氣缸等的升降驅動機構142,旋轉夾盤140,係升降自如。 [0045] 以包圍被保持於旋轉夾盤140的晶圓W之周圍的方式,設置罩杯150。罩杯150,係接取並回收從晶圓W飛散或落下的液體者。關於罩杯150的詳細內容,係如後所述。 [0046] 如圖5所示,在罩杯150的X方向負方向(圖5的下方向)側,係形成有沿著Y方向(圖5的左右方向)延伸的導軌160A~160D。導軌160A~160D,係例如從罩杯150之Y方向負方向(圖5的左方向)側的外方形成至Y方向正方向(圖5的右方向)側的外方。在導軌160A、160B、160C、160D,係分別安裝有支臂161、162、163、164。 [0047] 在第1臂部161,係支撐有供給「第1處理液」之一例即正型顯像液的正型顯像液供給噴嘴165。第1臂部161,係藉由噴嘴驅動部166,在導軌160A上移動自如。藉此,正型顯像液供給噴嘴165,係可從被設置於罩杯150之Y方向負方向側的外側之待機部167,移動至罩杯150內之晶圓W的中央部上方。又,藉由噴嘴驅動部166,第1臂部161,係可升降自如,且調節正型顯像液供給噴嘴165的高度。作為正型顯像液,係使用例如氫氧化四甲基銨(TMAH)。 [0048] 正型顯像液供給噴嘴165,係作為全體,具有圓筒形狀,如後述的圖6所示,其下端面165a,係被形成為例如與晶圓W呈平行之平坦的面。該下端面165a具有與正型顯像液接觸之接液面的功能。又,在下端面165a,係形成有供給顯像液的供給孔。供給孔的數量,係可任意選擇,亦可為1個或亦可為複數個。 [0049] 而且,正型顯像液供給噴嘴165的直徑,係被構成為比晶圓W的直徑小,在晶圓W的直徑為300mm之情況下,該噴嘴165的直徑,係例如直徑40mm。而且,正型顯像液供給噴嘴165,係由具有抗藥性之例如PTFE或石英等的材質所構成。 [0050] 在第2臂部162,係支撐有供給「第2處理液」之一例即負型顯像液的負型顯像液供給噴嘴168。在負型顯像液供給噴嘴168,係可採用例如與正型顯像液供給噴嘴165同形狀、同大小、同一構造者。 第2臂部162,係藉由噴嘴驅動部169,在導軌160D上移動自如。藉此,負型顯像液供給噴嘴168,係可從被設置於罩杯150之Y方向正方向側的外側之待機部170,移動至罩杯150內之晶圓W的中央部上方。又,藉由噴嘴驅動部169,第2臂部162,係可升降自如,且調節負型顯像液供給噴嘴168的高度。作為負型顯像液,係使用含有有機溶劑的顯像液,例如使用具有酯系溶劑即乙酸丁酯的顯像液。 [0051] 在第3臂部163,係支撐有供給正型用沖洗液的正型用沖洗液供給噴嘴171。第3臂部163,係藉由噴嘴驅動部172,在導軌160B上移動自如。藉此,正型用沖洗液供給噴嘴171,係可從被設置於罩杯150之Y方向負方向側且待機部167與罩杯150之間的位置之待機部173,移動至罩杯150內之晶圓W的中央部上方。又,藉由噴嘴驅動部172,第3臂部163,係可升降自如,且調節正型用沖洗液供給噴嘴171的高度。作為正型用沖洗液,係使用純水。 [0052] 在第4臂部164,係支撐有供給負型用沖洗液的負型用沖洗液供給噴嘴174。第4臂部164,係藉由噴嘴驅動部175,在導軌160C上移動自如。藉此,負型用沖洗液供給噴嘴174,係可從被設置於罩杯150之Y方向正方向側且待機部170與罩杯150之間的位置之待機部176,移動至罩杯150內之晶圓W的中央部上方。又,藉由噴嘴驅動部175,第4臂部164,係可升降自如,且調節負型用沖洗液供給噴嘴174的高度。作為負型用沖洗液,係使用例如 4-甲-2-戊醇(MIBC)。 [0053] 在此,使用圖6~圖8,說明關於顯像處理裝置30中之正型顯像處理的一例。另外,在以下的說明中,在晶圓W的表面,係形成有正型光阻膜,該光阻膜,係曝光完成。 在對於被保持於旋轉夾盤140之晶圓W的正型顯像處理之際,首先,使正型顯像液供給噴嘴165從待機部167移動至晶圓W的中央部上。而且,如圖6所示,以使正型顯像液供給噴嘴165之下端面165a接近且對向於晶圓W的方式,使該噴嘴165下降。接著,於使晶圓W停止的狀態下,或於以10rpm以下之旋轉速度使晶圓W旋轉的狀態下,從正型顯像液供給噴嘴165,使顯像液供給至晶圓W。藉此,在正型顯像液供給噴嘴165的下端面165a與晶圓W之間,以與該下端面165a接觸的方式,形成積液L。此時之顯像液的吐出流量,係例如、60~600ml/分。 [0054] 其次,使晶圓W之旋轉速度上升至30~ 100rpm,一面持續顯像液的供給,如圖7所示,一面使正型顯像液供給噴嘴165從晶圓W之中央部朝向周緣部側移動,從而使積液L在晶圓W的表面擴展。而且,下端面165a之端部到達晶圓W之周緣為止,例如花上2~15秒,使正型顯像液供給噴嘴165移動,形成覆蓋晶圓W之整面的積液L。 [0055] 在晶圓W之整面形成積液L後,則停止來自正型顯像液供給噴嘴165之顯像液的供給及晶圓W的旋轉,如圖8所示,使正型顯像液供給噴嘴165退避至待機部167。而且,於使晶圓W停止的狀態下,進行被形成於晶圓W上的積液L所致之靜止顯像。 [0056] 靜止顯像後,使正型用沖洗液供給噴嘴171從待機部173移動至晶圓W的中央部上。而且,從該噴嘴171對晶圓W供給純水,洗淨晶圓W。此時之晶圓W的旋轉速度,係例如100~1200rpm。 [0057] 而且,當純水所致之晶圓W的洗淨結束時,則使正型用沖洗液供給噴嘴171退避,並使晶圓W以例如2000rpm高速旋轉而實施甩乾。藉此,正型顯像處理結束。 [0058] 上述的正型顯像處理為一例,可應用本實施形態的正型顯像處理,係亦可包含其他工程來取代或附加於上述的工程。例如,形成積液L而使積液L擴展的動作,係亦可採用掃描輸入方式來取代掃瞄輸出方式,該掃描輸入方式,係在使晶圓W之周緣部側的上方位置位於正型顯像液供給噴嘴165並開始正型顯像液的吐出後,使正型顯像液供給噴嘴165移動至晶圓W的中央部,該掃瞄輸出方式,係使正型顯像液供給噴嘴165從晶圓W的中央部移動至周緣部側。又,亦可同時使用掃瞄輸出方式與掃描輸入方式。 [0059] 負型顯像處理,係與正型顯像處理相同,因此,省略其說明。 [0060] 返回到圖4的說明。 罩杯150,係具備有:罩杯本體151;及可動罩杯152,可對該罩杯本體151移動。 罩杯本體151,係具有:罩杯基體153;及固定罩杯154,被固定於該罩杯基體153。 [0061] 罩杯基體153,係具有環狀的外周壁153a與相同之環狀的內周壁153b,外周壁153a及內周壁153b,係被形成為被形成為沿上下方向(垂直方向)延伸。外周壁153a的內徑,係被形成為比晶圓W的直徑大,內周壁153b的外徑,係被形成為比晶圓W的直徑小,且內周壁153b的高度被形成為比外周壁153a的高度小。 又,罩杯基體153,係具有:底壁153c,連結外周壁153a的下端與內周壁153b的下端;及上壁153d,從外周壁153a的上端沿內周方向延伸,內周壁153b的上側呈開口。在內周壁153b的上端,係設置有沿內周方向延伸的突起153e,可藉由以固定罩杯154及保持板155來包夾該突起153e的方式,固定罩杯基體153。 [0062] 固定罩杯154,係構成位於外周壁153a與內周壁153b之間之環狀的內部構造體者。該固定罩杯154,係具有:環狀之周壁154a,位於外周壁153a與內周壁153b之間。又,固定罩杯154,係由朝向外周側逐漸變低之傾斜面(相當於「第1傾斜面」)154b形成有其上端的外周面。以下,將該傾斜面154b稱為外側傾斜面154b。如後述般,在外側傾斜面154b,係形成有階差。另外,外側傾斜面154b的下端,係連續於周壁154a的外周面。而且,固定罩杯154,係在比外側傾斜面154b更內周側,具有朝向內周側逐漸變低的內側傾斜面154c。 [0063] 可動罩杯152,係被設置為可在罩杯基體153的外周壁153a與固定罩杯154之間上下移動之環狀的構件,在上端具有分配部152a,並在分配部152a的下側具有周壁152b。分配部152a,係用以分開正型顯像液與負型顯像液而加以排出者,其上面由朝向外周側逐漸變低的傾斜面(相當於「第2傾斜面」)152c所形成。 周壁152b,係被形成為環狀,其內徑比固定罩杯154的周壁154a之外周的直徑大,其外徑比罩杯基體153的外周壁153a之內周的直徑小。又,在周壁152b的外周面連續有分配部152a之傾斜面152c的外周端。 [0064] 在可動罩杯152的上方,係設置有用以使可動罩杯152上升或下降的升降部156。 [0065] 返回到罩杯基體153的說明。在罩杯基體153的底壁153c,係形成有:二個分隔壁153f、153g,在外周壁153a與內周壁153b之間被形成為環狀。 又,底壁153c,係形成有:負型用回收口153h,在外周壁153a與外周側的分隔壁153f之間回收負型顯像液。而且,底壁153c,係在分隔壁153f、153g之間,形成有回收正型顯像液的正型用回收口153i;在內周側的分隔壁153g與內周壁153b之間,形成有回收被霧氣化之顯像液的霧氣用回收口153j。 [0066] 在負型用回收口153h與正型用回收口153i與霧氣用回收口153j,係連接有未圖示的泵等。 [0067] 接著,使用圖9~圖11,說明關於顯像處理裝置30中之顯像處理時之顯像液的排出。另外,關於被霧氣化之顯像液的排出,係省略說明。 [0068] 當正型顯像處理的情況下,在顯像處理裝置30中,係如圖9所示,使可動罩杯152上升,並且使被連接於正型用回收口153i的泵驅動。 藉此,在顯像處理裝置30中,係可將因晶圓W之旋轉而飛散的正型顯像液或迴繞至晶圓W之下側而落下的正型顯像液,從可動罩杯152的分配部152a與固定罩杯154之間引導至正型用回收口153i,並經由該回收口153i進行回收。 [0069] 另一方面,當負型顯像處理的情況下,在顯像處理裝置30中,係如圖10所示,使可動罩杯152下降,並且使被連接於負型用回收口153h的泵驅動。 藉此,在顯像處理裝置30中,係可將因晶圓W之旋轉而大致水平飛散的負型顯像液,從可動罩杯152的分配部152a與罩杯基體153的外周壁153a之間引導至負型用回收口153h,並經由該回收口153h進行回收。 [0070] 又,如圖11所示,在固定罩杯154之外側傾斜面154b的外周端,係形成有階差154d,當使可動罩杯152下降時,則(1)該可動罩杯152之分配部152a的內周側端下降至階差154d,此時,分配部152a之上面亦即傾斜面152c變得比形成階差154d之上側的面低。而且,(2)分配部152a之傾斜面152c的角度α,係變得比形成固定罩杯154的上側之面之角度的角度β大。 藉由上述(1)的構成,在晶圓W之旋轉時,即便負型顯像液不會大致水平飛散而相對於水平呈一角度飛散,該飛散之顯像液亦不會碰撞到分配部152a的內周側端。又,藉由上述(2)的構成,即便上述飛散之顯像液等碰撞到固定罩杯154的外側傾斜面154b,碰撞後之顯像液亦不會積聚於分配部152a與固定罩杯154之間而沿著分配部152a的傾斜面152c流去。 [0071] 因此,在顯像處理裝置30中,係可更確實地將從晶圓W飛散或落下的負型顯像液引導至負型用回收口153h。 因此,在顯像處理裝置30中,係即便為在負型顯像處理包含有低速旋轉工程的情況,亦可不使正型顯像液與負型顯像液混合而各別進行回收。 [0072] 另外,被設計成負型顯像液不會從下降了的可動罩杯152之分配部152a的內周側端與形成固定罩杯154之階差154d的下側之面之間的間隙流入,亦即該間隙變窄。 [0073] 又,可動罩杯152之分配部152a的傾斜面152c,係外周側之傾斜角度γ比內周側之傾斜角度α大為較佳。藉此,可在負型顯像液沿著傾斜面152c流動之際,使其更順暢地流動,又,與傾斜角度較大的情況相比,可遍及傾斜面152c之整面而抑制上下方向的尺寸。 [0074] 而且,可動罩杯152之分配部152a的內周側端部,係被形成為朝向內周側逐漸變薄為較佳。藉此,原因在於,負型顯像液變得難以積聚於下降了的可動罩杯152之分配部152a的內周側端與固定罩杯154之間。 [0075] 實際製作具有以上形狀的可動罩杯152,並進行了使可動罩杯152上下移動所致之正型顯像液與負型顯像液的排液分離後,可實際確認到,即便在包含晶圓W之旋轉速度為100rpm以下之工程的情況,亦可良好地進行排液分離。 [0076] (第2實施形態) 其次,使用圖12,說明關於本發明之第2實施形態之顯像處理裝置30的構成。 如圖12所示,第2實施形態之顯像處理裝置30的固定罩杯200,係在比外側傾斜面201之階差154d更內周側,具有:環狀之凹處202;及連通路徑203,使該凹處202連通於未圖示的排液路徑,在該點上,與第1實施形態的固定罩杯154不同。排液路徑,係被設置於例如保持板155(參閱圖4),在該排液路徑,係連接有泵。 [0077] 由於固定罩杯200如上述般所構成,因此,在來自晶圓W之負型顯像液碰撞到比外側傾斜面201之凹處202更內周面側的情況下,碰撞後而沿著外側傾斜面201移動的負型顯像液,係經由凹處202及連通路徑203等被排出。因此,由於可減少沿著固定罩杯200的外側傾斜面201移動而到達分配部152a與固定罩杯154之間的負型顯像液,因此,可更確實地防止負型顯像液與正型顯像液混合而被回收的情況。 [0078] (第3實施形態) 其次,使用圖13,說明關於本發明之第3實施形態之顯像處理裝置30的構成。 如圖13所示,第3實施形態之顯像處理裝置30的固定罩杯210,係在比外側傾斜面211之階差154d更內周側,具有環狀之彈性構件212。該彈性構件212,係被形成為具有與固定罩杯210之外側傾斜面211連續的上面,並且朝向外周側延伸而覆蓋可動罩杯152下降後時之分配部152a之內周側端的上方,在該點上,與第1實施形態的固定罩杯154不同。 [0079] 在本實施形態的顯像處理裝置30中,係具有上述的彈性構件212,藉此,負型顯像液不會從分配部152a的內周側端與固定罩杯210之間流入。因此,在本顯像處理裝置30中,係可更確實地防止負型顯像液與正型顯像液混合而被回收的情況。 [0080] (參考例) 使用圖14,說明關於參考例之顯像處理裝置的構成。 如圖14所示,本例的顯像處理裝置,係固定罩杯601之形狀與以往相同,在該點上,與第1實施形態的顯像處理裝置30不同。又,顯像處理裝置600的可動罩杯602,係被構成為分配部603之內周側前端可往內周方向延伸出,在該點上,與第1實施形態的顯像處理裝置30不同。 本例的顯像處理裝置中之正型顯像處理時之正型顯像液的排出工程,係與第1實施形態的顯像處理裝置30相同。 [0081] 在本例的顯像處理裝置中,係如上述般,由於可動罩杯602之分配部603的內周側前端可往內周方向延伸出,因此,在負型顯像處理之際,可在可動罩杯602下降後,使分配部603之內周側前端位於比晶圓W的外周端更內周側。藉此,負型顯像液不會流入可動罩杯602的分配部603與固定罩杯601之間。因此,在本例的顯像處理裝置中,係可更確實地防止負型顯像液與正型顯像液混合而被回收的情況。 [0082] 在以上中,雖係以將本發明應用於顯像處理裝置的例子來進行了說明,但只要為以2種類之處理液且同一模組來進行各別的基板處理,並各別回收各處理液者,則亦可將本發明應用於顯像處理裝置以外的基板處理裝置。又,在以上的例子中,雖係將正型顯像液之回收路徑設成為內周側而將負型顯像液之回收路徑設成為外周側,但亦可將正型顯像液之外周路徑設成為外周側而將負型顯像液之回收路徑設成為內周側。 [0083] 以上,雖參閱附加圖面說明了關於本發明之適當的實施形態,但本發明並不限定於該例。只要為本發明所屬技術領域中具有通常知識者,顯然可在申請專利範圍所記載之思想範疇內思及各種變更例或修正例,並了解關於該些當然亦屬於本發明的技術性範圍。本發明,係不限於該例,可採用各種態樣者。本發明,係亦可應用於基板為晶圓以外之FPD(平板顯示器)、光罩用之倍縮遮罩(mask reticle)等之其他基板的情形。 [產業上之可利用性] [0084] 本發明,係在使用複數個種類之處理液(例如顯像液)而根據種類處理基板之際為有用。[0020] Hereinafter, embodiments of the present invention will be described. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant descriptions are omitted. [0021] FIG. 1 is a schematic plan view schematically showing the configuration of a substrate processing system 1 provided with a development processing apparatus according to this embodiment. 2 and 3 are respectively a front view and a rear view schematically showing the outline of the internal configuration of the substrate processing system 1. [0022] As shown in FIG. 1, the substrate processing system 1 has a structure in which the following are integrally connected: a cassette station 10 for loading and unloading a cassette C containing a plurality of wafers W; and a processing station 11 including: There are a plurality of various processing apparatuses that perform predetermined processing on the wafer W; and the interface station 13 receives and receives the wafer W between the exposure apparatus 12 and the exposure apparatus 12 adjacent to the processing station 11. [0023] The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21, and the cassette C is mounted when the cassette C is carried in and out of the substrate processing system 1. [0024] As shown in FIG. 1, the cassette station 10 is provided with a wafer transfer device 23 that can move freely on a transfer path 22 extending in the X direction. The wafer transfer device 23 also moves freely in the vertical direction and around the vertical axis (θ direction), and can be mounted on the cassette C on each cassette mounting plate 21 and the third block G3 of the processing station 11 described later. The wafer W is transferred between the receiving and receiving devices. [0025] The processing station 11 is provided with a plurality of, for example, four blocks, that is, the first block G1 to the fourth block G4 provided with various devices. For example, on the front side of the processing station 11 (the negative direction side in the X direction in FIG. 1), a first block G1 is provided, and on the back side of the processing station 11 (the positive direction side in the X direction in FIG. 1 and the upper side of the figure) ), The second block G2 is set. Further, the third block G3 described above is provided on the cassette station 10 side of the processing station 11 (the negative direction side in the Y direction in FIG. 1), and on the interface station 13 side of the processing station 11 (the Y direction in FIG. 1) Positive direction side), the fourth block G4 is provided. [0026] For example, in the first block G1, as shown in FIG. 2, a plurality of liquid processing apparatuses are arranged in the following order from the bottom, for example: the development processing apparatus 30 performs development processing on the wafer W; the lower part The anti-reflection film forming device 31 forms an anti-reflection film (hereinafter referred to as "lower anti-reflection film") on the lower layer of the photoresist film of the wafer W; and the photoresist coating device 32 applies a photoresist liquid to the wafer W A photoresist film is formed; and an upper antireflection film forming device 33 forms an antireflection film (hereinafter referred to as an "upper antireflection film") on the upper layer of the photoresist film of the wafer W. [0027] For example, three imaging processing devices 30, a lower reflection preventing film forming device 31, a photoresist coating device 32, and an upper reflection preventing film forming device 33 are arranged in a horizontal direction. In addition, the number or arrangement of the development processing device 30, the lower reflection preventing film forming device 31, the photoresist coating device 32, and the upper reflection preventing film forming device 33 can be arbitrarily selected. [0028] In the lower reflection preventing film forming device 31, the photoresist coating device 32, and the upper reflection preventing film forming device 33, for example, spin coating is performed to apply a predetermined coating liquid on the wafer W. . In spin coating, for example, a coating liquid is ejected onto a wafer W from a coating nozzle, and the wafer W is rotated to spread the coating liquid on the surface of the wafer W. The configuration of the development processing device 30 will be described later. [0029] For example, in the second block G2, as shown in FIG. 3, a plurality of heat treatment devices 40 to 43 are provided to perform heat treatment such as heating and cooling of the wafer W. [0030] For example, in the third block G3, as shown in FIG. 2 and FIG. 3, a plurality of receiving devices 50, 51, 52, 53, 54, 55, and 56 are sequentially arranged from below. Further, in the fourth block G4, as shown in FIG. 3, a plurality of receiving devices 60, 61, and 62 are sequentially provided from below. [0031] As shown in FIG. 1, in a region surrounded by the first block G1 to the fourth block G4, a wafer transfer region D is formed. In the wafer transfer area D, a plurality of wafer transfer devices 70 are disposed, and the transfer arms 70 have transfer arms that can move freely in, for example, the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer device 70 is moved in the wafer transfer area D, and can be scheduled to be located in the surrounding first block G1, second block G2, third block G3, and fourth block G4. The wafer W is transferred between the devices. [0032] In the wafer transfer area D, as shown in FIG. 3, a shuttle transfer device 80 is provided: the wafer W is linearly transferred between the third block G3 and the fourth block G4. [0033] The shuttle conveying device 80 can move linearly along the Y direction in FIG. 3, for example. The shuttle transfer device 80 can move in the Y direction while supporting the wafer W, and transfer the wafer between the receiving device 52 in the third block G3 and the receiving device 62 in the fourth block G4. W. [0034] As shown in FIG. 1, a wafer transfer device 100 is provided beside the X-direction positive side of the third block G3. The wafer transfer apparatus 100 includes a transfer arm that can move freely in, for example, the X direction, the θ direction, and the vertical direction. The wafer transfer device 100 is capable of moving up and down while supporting the wafer W, and transfers the wafer W to each receiving device in the third block G3. [0035] The interface station 13 is provided with a wafer transfer device 110 and a receiving device 111. The wafer transfer device 110 includes a transfer arm that can move freely in, for example, the Y direction, the θ direction, and the vertical direction. The wafer transfer device 110 supports, for example, a wafer W on a transfer arm, and transfers the wafer W between each receiving device, the receiving device 111 and the exposure device 12 in the fourth block G4. [0036] In the above substrate processing system 1, as shown in FIG. 1, a control unit 300 is provided. The control unit 300 is, for example, a computer, and includes a program storage unit (not shown). The program storage section stores a program for controlling the processing of the wafer W in the substrate processing system 1. In the program storage section, the operation of the drive system for controlling the various processing devices or conveying devices described above is also stored, and the nozzle driving sections 166, 169, 172, 175, and the lifting section 156, which are described later, are also realized. A development processing program described later in the substrate processing system 1. In addition, the aforementioned programs can also be read by a computer that is recorded on a computer-readable hard disk (HD), floppy disk (FD), optical disk (CD), magneto-optical disk (MO), memory card, etc. The storage medium, and the control unit 300 is installed from the storage medium. [0037] Next, an outline of wafer processing using the substrate processing system 1 configured as described above will be described. First, the cassette C containing the plurality of wafers W is carried into a cassette station 10 of the substrate processing system 1, and the wafers W in the cassette C are sequentially transferred to the processing station by the wafer transfer device 23. 11 的 给 给 装置 53。 11 of the receiving device 53. [0038] Next, the wafer W is transferred to the heat treatment device 40 in the second block G2 by the wafer transfer device 70 to perform temperature adjustment processing. Thereafter, the wafer W is transferred to, for example, the lower reflection preventing film forming device 31 in the first block G1 by the wafer transfer device 70 to form a lower reflection preventing film on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 41 in the second block G2 and is subjected to heat treatment. [0039] Thereafter, the wafer W is transferred to the heat treatment device 42 of the second block G2 by the wafer transfer device 70, and is subjected to temperature adjustment processing. Thereafter, the wafer W is transferred to the photoresist coating device 32 of the first block G1 by the wafer transfer device 70 to form a photoresist film on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 43 and is subjected to a pre-baking process. [0040] Next, the wafer W is transferred to the upper anti-reflection film forming device 33 of the first block G1, and an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 43 in the second block G2 and is subjected to heat treatment. Thereafter, the wafer W is transferred to the receiving and receiving device 56 in the third block G3 by the wafer transfer device 70. [0041] Next, the wafer W is transferred to the receiving device 52 by the wafer transfer device 100, and is transferred to the receiving device 62 of the fourth block G4 by the shuttle transfer device 80. Thereafter, the wafer W is transferred to the exposure device 12 by the wafer transfer device 110 of the interface station 13 and is subjected to exposure processing in a predetermined pattern. [0042] Next, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 70, and is subjected to a post-exposure bake process. Thereby, a deprotection reaction proceeds by an acid generated in the exposed portion of the photoresist film. Then, the wafer W is transferred to the development processing device 30 by the wafer transfer device 70 to perform development processing. [0043] (First Embodiment) Next, the configuration of the development processing device 30 according to the first embodiment of the present invention will be described with reference to FIGS. 4 and 5. The development processing device 30 includes a processing container 130 that can be sealed inside as shown in FIG. 4. A carry-in / out port (not shown) for the wafer W is formed on the side of the processing container 130. [0044] A spin chuck 140 that holds the wafer W and rotates it about the vertical axis O is provided in the processing container 130. The rotary chuck 140 can be rotated to a predetermined speed by a chuck driving section 141 such as a motor. In addition, the chuck driving section 141 is provided with a lifting drive mechanism 142 such as an air cylinder, and the chuck 140 is rotatable. [0045] The cup 150 is provided so as to surround the periphery of the wafer W held by the spin chuck 140. The cup 150 is used to collect and recover the liquid scattered or dropped from the wafer W. The details of the cup 150 will be described later. [0046] As shown in FIG. 5, rails 160A to 160D extending along the Y direction (left-right direction in FIG. 5) are formed on the negative direction (lower direction in FIG. 5) side of the cup 150 in the X direction. The guide rails 160A to 160D are formed, for example, from the outer side in the negative Y-direction (left direction in FIG. 5) side of the cup 150 to the outer side in the positive Y-direction (right direction in FIG. 5) side. Arms 161, 162, 163, and 164 are mounted on the guide rails 160A, 160B, 160C, and 160D, respectively. [0047] In the first arm portion 161, a positive-type developing solution supply nozzle 165 that supplies a positive-type developing solution, which is an example of the "first processing solution", is supported. The first arm portion 161 is free to move on the guide rail 160A by the nozzle driving portion 166. Thereby, the positive-type developing liquid supply nozzle 165 can move from the standby portion 167 provided on the outer side of the negative side in the Y direction of the cup 150 to the center portion of the wafer W in the cup 150. In addition, the nozzle driving section 166 and the first arm section 161 can be raised and lowered freely, and the height of the positive-type developing liquid supply nozzle 165 is adjusted. As the positive developing solution, for example, tetramethylammonium hydroxide (TMAH) is used. [0048] The positive-type developing liquid supply nozzle 165 has a cylindrical shape as a whole, and as shown in FIG. 6 described later, the lower end surface 165a thereof is formed as a flat surface parallel to the wafer W, for example. The lower end surface 165a has a function of a liquid-contacting surface in contact with the positive-type developing solution. A supply hole for supplying a developing solution is formed in the lower end surface 165a. The number of supply holes can be arbitrarily selected, and it can be one or plural. [0049] The diameter of the positive-type developing solution supply nozzle 165 is smaller than the diameter of the wafer W. When the diameter of the wafer W is 300 mm, the diameter of the nozzle 165 is, for example, 40 mm. . The positive-type developing solution supply nozzle 165 is made of a material having chemical resistance such as PTFE or quartz. [0050] The second arm portion 162 supports a negative-type developing solution supply nozzle 168 that supplies a negative-type developing solution, which is an example of a "second processing solution." The negative-type developing solution supply nozzle 168 may be, for example, one having the same shape, the same size, and the same structure as the positive-type developing solution supply nozzle 165. The second arm portion 162 is free to move on the guide rail 160D by the nozzle driving portion 169. Thereby, the negative-type developing liquid supply nozzle 168 can move from the standby portion 170 provided on the outer side of the positive direction side in the Y direction of the cup 150 to the center portion of the wafer W in the cup 150. In addition, the nozzle driving section 169 and the second arm section 162 can be raised and lowered freely, and the height of the negative-type developing liquid supply nozzle 168 can be adjusted. As the negative-type developing solution, a developing solution containing an organic solvent is used, and for example, a developing solution having butyl acetate, which is an ester-based solvent, is used. [0051] The third arm portion 163 supports a positive-type flushing liquid supply nozzle 171 for supplying a positive-type flushing liquid. The third arm portion 163 is free to move on the guide rail 160B by the nozzle driving portion 172. As a result, the positive-type flushing liquid supply nozzle 171 can be moved to the wafer in the cup 150 from the standby portion 173 which is provided on the negative side in the Y direction of the cup 150 and between the standby portion 167 and the cup 150. Above the center of W. In addition, the nozzle driving section 172 and the third arm section 163 can be raised and lowered freely, and the height of the positive-type flushing liquid supply nozzle 171 is adjusted. As the positive type washing liquid, pure water is used. [0052] The fourth arm portion 164 supports a negative-type flushing liquid supply nozzle 174 that supplies a negative-type flushing liquid. The fourth arm portion 164 is movable on the guide rail 160C by the nozzle driving portion 175. As a result, the negative-type flushing liquid supply nozzle 174 can be moved to the wafer in the cup 150 from the standby portion 176 provided on the positive side in the Y direction of the cup 150 and between the standby portion 170 and the cup 150. Above the center of W. In addition, the nozzle driving portion 175 and the fourth arm portion 164 can be raised and lowered freely, and the height of the negative-type flushing liquid supply nozzle 174 is adjusted. As the negative type washing liquid, for example, 4-methyl-2-pentanol (MIBC) is used. [0053] Here, an example of the positive-type development processing in the development processing device 30 will be described with reference to FIGS. 6 to 8. In the following description, a positive type photoresist film is formed on the surface of the wafer W, and the photoresist film is exposed. (1) In the case of the positive-type development processing of the wafer W held on the spin chuck 140, first, the positive-type developing liquid supply nozzle 165 is moved from the standby portion 167 to the central portion of the wafer W. As shown in FIG. 6, the nozzle 165 is lowered so that the lower end surface 165 a of the positive-type developing solution supply nozzle 165 approaches and faces the wafer W. Next, while the wafer W is stopped or the wafer W is rotated at a rotation speed of 10 rpm or less, the developing liquid is supplied from the positive-type developing liquid supply nozzle 165 to the wafer W. Thereby, a liquid accumulation L is formed between the lower end surface 165a of the positive-type developing liquid supply nozzle 165 and the wafer W so as to be in contact with the lower end surface 165a. The discharge flow rate of the imaging solution at this time is, for example, 60 to 600 ml / min. [0054] Next, the rotation speed of the wafer W is increased to 30 to 100 rpm while the supply of the developing solution is continued. As shown in FIG. 7, the positive developing solution supply nozzle 165 is directed from the center of the wafer W The peripheral edge portion moves, so that the accumulated liquid L spreads on the surface of the wafer W. Then, until the end of the lower end surface 165a reaches the periphery of the wafer W, it takes, for example, 2 to 15 seconds to move the positive-type developing liquid supply nozzle 165 to form a liquid accumulation L covering the entire surface of the wafer W. [0055] After the accumulation of liquid L on the entire surface of the wafer W, the supply of the developing liquid from the positive-type developing liquid supply nozzle 165 and the rotation of the wafer W are stopped, as shown in FIG. The image liquid supply nozzle 165 retracts to the standby section 167. Then, in a state in which the wafer W is stopped, a still image caused by the accumulated liquid L formed on the wafer W is performed. [0056] After developing, the positive-type flushing liquid supply nozzle 171 is moved from the standby portion 173 to the central portion of the wafer W. Then, pure water is supplied from the nozzle 171 to the wafer W, and the wafer W is cleaned. The rotation speed of the wafer W at this time is, for example, 100 to 1200 rpm. [0057] When the cleaning of the wafer W by pure water is completed, the positive-type flushing liquid supply nozzle 171 is retracted, and the wafer W is rotated at a high speed of 2000 rpm for spin drying. Thereby, the positive-type development processing is ended. [0058] The above-mentioned positive-type development processing is an example, and the positive-type development processing of this embodiment may be applied, and other processes may be included instead of or in addition to the above-mentioned processes. For example, the operation of forming the effusion L to expand the effusion L can also use a scan input method instead of a scan output method. The scan input method is such that the upper position of the peripheral edge portion side of the wafer W is in a positive type. After the developing solution supply nozzle 165 starts to eject the positive developing solution, the positive developing solution supply nozzle 165 is moved to the center of the wafer W. This scanning output method uses a positive developing solution supply nozzle 165 moves from the center portion of the wafer W to the peripheral portion side. It is also possible to use the scan output method and the scan input method at the same time. [0059] The negative-type development processing is the same as the positive-type development processing, and therefore description thereof is omitted. [0060] Return to the description of FIG. 4. The cup 150 includes a cup body 151 and a movable cup 152 that can be moved to the cup body 151. The cup main body 151 includes a cup base 153 and a fixed cup 154 fixed to the cup base 153. [0061] The cup base 153 has an annular outer peripheral wall 153a and the same annular inner peripheral wall 153b, an outer peripheral wall 153a, and an inner peripheral wall 153b are formed so as to extend in the vertical direction (vertical direction). The inner diameter of the outer peripheral wall 153a is formed larger than the diameter of the wafer W, the outer diameter of the inner peripheral wall 153b is formed smaller than the diameter of the wafer W, and the height of the inner peripheral wall 153b is formed higher than the outer peripheral wall. The height of 153a is small. The cup base 153 includes a bottom wall 153c, which connects the lower end of the outer peripheral wall 153a and the lower end of the inner peripheral wall 153b, and an upper wall 153d, which extends from the upper end of the outer peripheral wall 153a in the inner peripheral direction, and the upper side of the inner peripheral wall 153b is opened. . The upper end of the inner peripheral wall 153b is provided with a protrusion 153e extending in the inner circumferential direction, and the cup base 153 can be fixed by sandwiching the protrusion 153e by fixing the cup 154 and the holding plate 155. [0062] The fixed cup 154 constitutes a ring-shaped internal structure located between the outer peripheral wall 153a and the inner peripheral wall 153b. The fixed cup 154 has a ring-shaped peripheral wall 154a between the outer peripheral wall 153a and the inner peripheral wall 153b. In addition, the fixed cup 154 is an outer peripheral surface with an upper end formed by an inclined surface (corresponding to the "first inclined surface") 154b that gradually decreases toward the outer peripheral side. Hereinafter, this inclined surface 154b is referred to as an outer inclined surface 154b. As described later, a step is formed on the outer inclined surface 154b. The lower end of the outer inclined surface 154b is continuous to the outer peripheral surface of the peripheral wall 154a. Further, the fixed cup 154 is located on the inner peripheral side than the outer inclined surface 154b, and has an inner inclined surface 154c that gradually decreases toward the inner peripheral side. [0063] The movable cup 152 is a ring-shaped member provided to move up and down between the outer peripheral wall 153a of the cup base 153 and the fixed cup 154. The movable cup 152 has a distribution portion 152a at an upper end and a distribution portion 152a at a lower side. Perimeter wall 152b. The distribution portion 152a is for separating and discharging a positive-type developing solution and a negative-type developing solution, and an upper surface thereof is formed by an inclined surface (corresponding to a "second inclined surface") 152c that gradually decreases toward the outer peripheral side. The perimeter wall 152b is formed in a ring shape, and its inner diameter is larger than the diameter of the outer periphery of the peripheral wall 154a of the fixed cup 154, and its outer diameter is smaller than the diameter of the inner periphery of the outer peripheral wall 153a of the cup base 153. Moreover, the outer peripheral end of the inclined surface 152c of the distribution part 152a is continued on the outer peripheral surface of the peripheral wall 152b. [0064] Above the movable cup 152, a lifting portion 156 is provided for raising or lowering the movable cup 152. [0065] Return to the description of the cup base 153. The bottom wall 153c of the cup base 153 is formed with two partition walls 153f and 153g, and is formed in a ring shape between the outer peripheral wall 153a and the inner peripheral wall 153b. Further, the bottom wall 153c is formed with a negative type recovery port 153h, and a negative type developing solution is recovered between the outer peripheral wall 153a and the outer peripheral side partition wall 153f. The bottom wall 153c is connected between the partition walls 153f and 153g, and a positive recovery port 153i for recovering the positive-type developing solution is formed. A recovery wall is formed between the partition wall 153g on the inner peripheral side and the inner peripheral wall 153b. The mist recovery port 153j for the misted developing solution. [0066] A pump (not shown) and the like are connected to the negative type recovery port 153h, the positive type recovery port 153i, and the mist recovery port 153j. [0067] Next, the discharge of the developing solution during the developing process in the developing processing device 30 will be described with reference to FIGS. 9 to 11. In addition, the description of the discharge of the mist-developed developing solution is omitted. [0068] In the case of positive-type development processing, as shown in FIG. 9, in the development processing device 30, the movable cup 152 is raised and driven by a pump connected to the positive-type recovery port 153i. With this, in the development processing device 30, the positive-type developing solution that is scattered by the rotation of the wafer W or the positive-type developing solution that is wound down to the lower side of the wafer W can be removed from the movable cup 152. The distribution portion 152a and the fixed cup 154 are guided to the positive collection port 153i, and are collected through the collection port 153i. [0069] On the other hand, in the case of negative-type development processing, in the development processing device 30, as shown in FIG. 10, the movable cup 152 is lowered and the negative-type recovery port 153h is connected. Pump driven. As a result, in the development processing device 30, a negative-type development liquid that is scattered substantially horizontally due to the rotation of the wafer W can be guided between the distribution portion 152a of the movable cup 152 and the outer peripheral wall 153a of the cup base 153. It reaches 153h for negative type collection ports, and collects through this collection port 153h. [0070] As shown in FIG. 11, a step 154d is formed on the outer peripheral end of the inclined surface 154b on the outer side of the fixed cup 154. When the movable cup 152 is lowered, (1) the distribution portion of the movable cup 152 The inner peripheral side end of 152a drops to the level difference 154d. At this time, the upper surface of the distribution portion 152a, that is, the inclined surface 152c becomes lower than the surface forming the level difference 154d. (2) The angle α of the inclined surface 152c of the distribution portion 152a becomes larger than the angle β of the angle forming the upper surface of the fixed cup 154. With the above-mentioned configuration (1), even when the negative-type developing liquid does not scatter substantially horizontally and scatters at an angle with respect to the level during the rotation of the wafer W, the scattered developing solution does not collide with the distribution portion. The inner peripheral side end of 152a. Further, with the configuration of (2) above, even if the scattered developing liquid collides with the outer inclined surface 154b of the fixed cup 154, the developing liquid after the collision does not accumulate between the distribution portion 152a and the fixed cup 154. And it flows along the inclined surface 152c of the distribution part 152a. [0071] Therefore, in the development processing apparatus 30, the negative-type developing solution scattered or dropped from the wafer W can be more surely guided to the negative-type recovery port 153h. Therefore, even in the case where the low-speed rotation process is included in the negative-type development processing in the development processing device 30, the positive-type development liquid and the negative-type development liquid can be collected separately without being mixed. [0072] In addition, the negative-type developing solution is designed so as not to flow into the gap between the inner peripheral side end of the dispensing portion 152a of the movable cup 152 that has fallen and the lower surface that forms the step 154d of the fixed cup 154. , That is, the gap becomes narrower. [0073] The inclined surface 152c of the distribution portion 152a of the movable cup 152 is preferably such that the inclination angle γ of the outer peripheral side is larger than the inclination angle α of the inner peripheral side. This makes it possible for the negative-type developing liquid to flow more smoothly along the inclined surface 152c while suppressing the vertical direction throughout the entire surface of the inclined surface 152c as compared with the case where the inclined angle is large. size of. [0074] It is preferable that the inner peripheral side end portion of the distribution portion 152a of the movable cup 152 is formed to be gradually thinner toward the inner peripheral side. This is because it becomes difficult for the negative-type developing solution to accumulate between the inner peripheral side end of the dispensing portion 152 a of the movable cup 152 that has fallen and the fixed cup 154. [0075] After actually manufacturing the movable cup 152 having the above shape, and separating the drainage of the positive developing liquid and the negative developing liquid caused by moving the movable cup 152 up and down, it was actually confirmed that In the case of a process in which the rotation speed of the wafer W is 100 rpm or less, drainage and separation can be performed well. [0076] (Second Embodiment) Next, the configuration of a development processing device 30 according to a second embodiment of the present invention will be described with reference to FIG. 12. As shown in FIG. 12, the fixed cup 200 of the development processing device 30 of the second embodiment is located on the inner peripheral side than the step 154d of the outer inclined surface 201, and includes: a circular recess 202; and a communication path 203 The recess 202 is communicated with a drainage path (not shown), and is different from the fixed cup 154 of the first embodiment in this point. The liquid discharge path is provided, for example, on a holding plate 155 (see FIG. 4), and a pump is connected to the liquid discharge path. [0077] Since the fixed cup 200 is configured as described above, when the negative-type developing liquid from the wafer W collides with the inner peripheral surface side than the recess 202 of the outer inclined surface 201, the collision occurs along the edge. The negative-type developing liquid moving toward the outer inclined surface 201 is discharged through the recess 202, the communication path 203, and the like. Therefore, since the negative-type developing solution that moves along the outer inclined surface 201 of the fixed cup 200 and reaches between the distribution portion 152a and the fixed cup 154 can be reduced, the negative-type developing solution and the positive-type developing solution can be more surely prevented. The case where the liquid is mixed and recovered. [0078] (Third Embodiment) Next, the configuration of a development processing device 30 according to a third embodiment of the present invention will be described with reference to FIG. 13. As shown in FIG. 13, the fixed cup 210 of the development processing device 30 according to the third embodiment is located on the inner peripheral side of the step 154d of the outer inclined surface 211 and has a ring-shaped elastic member 212. The elastic member 212 is formed to have an upper surface continuous with the inclined surface 211 on the outer side of the fixed cup 210 and extends toward the outer peripheral side to cover the upper end of the inner peripheral side of the distribution portion 152a when the movable cup 152 descends, This is different from the fixed cup 154 of the first embodiment. [0079] The development processing device 30 according to this embodiment includes the above-mentioned elastic member 212, whereby the negative-type development liquid does not flow from between the inner peripheral side end of the distribution portion 152a and the fixed cup 210. Therefore, in the present development processing apparatus 30, it is possible to more reliably prevent a situation where the negative-type developing solution and the positive-type developing solution are mixed and recovered. [0080] (Reference Example) The configuration of a development processing device according to a reference example will be described with reference to FIG. 14. As shown in FIG. 14, the development processing device of this example has the same shape as the fixed cup 601, and differs from the development processing device 30 of the first embodiment in this point. In addition, the movable cup 602 of the development processing device 600 is configured such that the front end of the inner peripheral side of the distribution portion 603 can be extended in the inner peripheral direction, and is different from the development processing device 30 of the first embodiment in this point.工程 The process of discharging the positive-type developing solution during the positive-type developing process in the developing-type processing apparatus of this example is the same as the developing-process device 30 of the first embodiment. [0081] In the development processing apparatus of this example, as described above, the inner peripheral side tip of the distribution portion 603 of the movable cup 602 can be extended in the inner peripheral direction. Therefore, during the negative development processing, After the movable cup 602 is lowered, the front end of the inner peripheral side of the distribution portion 603 may be positioned on the inner peripheral side than the outer peripheral end of the wafer W. Accordingly, the negative-type developing liquid does not flow between the distribution portion 603 of the movable cup 602 and the fixed cup 601. Therefore, in the development processing apparatus of this example, it is possible to more surely prevent the case where the negative-type developing solution and the positive-type developing solution are mixed and recovered. [0082] In the above, the example has been described with an example in which the present invention is applied to a development processing apparatus. However, as long as two types of processing liquids and the same module are used for each substrate processing, the substrate processing is performed separately. Those who collect each processing liquid can also apply the present invention to a substrate processing apparatus other than a development processing apparatus. In the above example, although the recovery path of the positive-type developing solution is set to the inner peripheral side and the recovery path of the negative-type developing solution is set to the outer peripheral side, the positive-type developing solution may be set to the outer periphery. The path is set to the outer peripheral side and the collection path of the negative-type developing solution is set to the inner peripheral side. [0083] Although the preferred embodiments of the present invention have been described with reference to the accompanying drawings, the present invention is not limited to this example. As long as it is a person with ordinary knowledge in the technical field to which the present invention pertains, it is obvious that various modifications or amendments can be considered within the scope of the ideas described in the scope of the patent application, and it is understood that these naturally belong to the technical scope of the present invention. The present invention is not limited to this example, and various aspects can be adopted. The present invention can also be applied to a case where the substrate is a FPD (Flat Panel Display) other than a wafer, a mask reticle, and other substrates. [Industrial Applicability] 008 [0084] The present invention is useful when a substrate is processed according to the type by using a plurality of types of processing liquids (for example, a developing liquid).
[0085][0085]
1‧‧‧基板處理系統1‧‧‧ substrate processing system
30‧‧‧顯像處理裝置30‧‧‧Development processing device
140‧‧‧旋轉夾盤140‧‧‧Rotary chuck
142‧‧‧升降驅動機構142‧‧‧Lifting drive mechanism
150‧‧‧罩杯150‧‧‧cup
151‧‧‧罩杯本體151‧‧‧cup body
152‧‧‧可動罩杯152‧‧‧movable cup
152a‧‧‧分配部152a‧‧‧ Distribution Department
153‧‧‧罩杯基體153‧‧‧ cup base
153a‧‧‧外周壁153a‧‧‧outer wall
153c‧‧‧底壁153c‧‧‧ bottom wall
153h‧‧‧負型用回收口153h‧‧‧Recycling port for negative type
154、200、210‧‧‧固定罩杯154, 200, 210‧‧‧ fixed cup
154b、201、211‧‧‧外側傾斜面154b, 201, 211‧‧‧ outside slope
154d‧‧‧階差154d‧‧‧step
165‧‧‧正型顯像液供給噴嘴165‧‧‧Positive developer supply nozzle
168‧‧‧負型顯像液供給噴嘴168‧‧‧ Negative developer supply nozzle
171‧‧‧正型用沖洗液供給噴嘴171‧‧‧Positive type flushing liquid supply nozzle
174‧‧‧負型用沖洗液供給噴嘴174‧‧‧Flushing nozzle for negative type
202‧‧‧凹處202‧‧‧Concave
203‧‧‧連通路徑203‧‧‧connection path
212‧‧‧彈性構件212‧‧‧Elastic member
300‧‧‧控制部300‧‧‧ Control Department
[0019] [圖1] 表示搭載了本實施形態之顯像處理裝置之基板處理系統之構成之概略的平面圖。 [圖2] 示意地表示圖1之基板處理系統之構成之概略的正視圖。 [圖3] 示意地表示圖1之基板處理系統之構成之概略的後視圖。 [圖4] 示意地表示本發明之第1實施形態之顯像處理裝置之構成之概略的縱剖面圖。 [圖5] 示意地表示本發明之第1實施形態之顯像處理裝置之構成之概略的橫剖面圖。 [圖6] 表示在晶圓上形成顯像液之積液的樣子之從側面觀察的說明圖。 [圖7] 表示在晶圓上使顯像液之積液往外周方向擴散的樣子之從側面觀察的說明圖。 [圖8] 表示在晶圓上使顯像液之積液往外周方向擴散的樣子之從側面觀察的說明圖。 [圖9] 示意地表示正型顯像處理之際之回收罩杯之狀態的說明剖面圖。 [圖10] 示意地表示負型顯像處理之際之回收罩杯之狀態的說明剖面圖。 [圖11] 表示負型顯像處理之際的回收罩杯中之固定罩杯與可動罩杯之邊界部分之狀態的說明剖面圖。 [圖12] 本發明之第2實施形態之顯像處理裝置的說明剖面圖。 [圖13] 本發明之第3實施形態之顯像處理裝置的說明剖面圖。 [圖14] 參考例之顯像處理裝置的說明圖。 [圖15] 表示以往的顯像處理裝置中之正型顯像處理之際之回收罩杯之狀態的說明剖面圖。 [圖16] 表示以往的顯像處理裝置中之負型顯像處理之際之回收罩杯之狀態的說明剖面圖。 [圖17] 以往的顯像處理裝置中之課題的說明圖。 [圖18] 以往的顯像處理裝置中之課題的其他說明圖。[0019] [FIG. 1] A schematic plan view showing a configuration of a substrate processing system equipped with a development processing apparatus according to this embodiment. [Fig. 2] A schematic front view schematically showing the configuration of the substrate processing system of Fig. 1. [Fig. 3] A schematic rear view schematically showing the configuration of the substrate processing system of Fig. 1. [FIG. 4] A schematic longitudinal cross-sectional view schematically showing the configuration of a development processing apparatus according to a first embodiment of the present invention. [FIG. 5] A schematic cross-sectional view schematically showing the configuration of a development processing apparatus according to a first embodiment of the present invention. [Fig. 6] An explanatory view showing a state where a liquid accumulation of a developing solution is formed on a wafer, as viewed from the side. [Fig. 7] An explanatory view showing a side view of a state in which a liquid accumulated in a developing solution is diffused in a peripheral direction on a wafer. [Fig. 8] An explanatory view showing a side view of a state in which a liquid accumulated in a developing solution is diffused in a peripheral direction on a wafer. [Fig. 9] An explanatory cross-sectional view schematically showing a state of a recovery cup at the time of positive-type development processing. [Fig. 10] An explanatory cross-sectional view schematically showing a state of a recovery cup during a negative development process. [Fig. 11] An explanatory sectional view showing a state of a boundary portion between a fixed cup and a movable cup in a recovery cup at the time of negative-type development processing. [FIG. 12] An explanatory sectional view of a developing processing apparatus according to a second embodiment of the present invention. [FIG. 13] An explanatory sectional view of a developing processing apparatus according to a third embodiment of the present invention. [Fig. 14] An explanatory diagram of a development processing device of a reference example. [Fig. 15] An explanatory cross-sectional view showing a state of a recovery cup during a positive development process in a conventional development processing apparatus. [Fig. 16] An explanatory cross-sectional view showing a state of a recovery cup during negative development processing in a conventional development processing apparatus. [Fig. 17] An explanatory diagram of a problem in a conventional development processing device. [Fig. 18] Other explanatory diagrams of the problems in the conventional development processing apparatus.
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JP6778548B2 (en) * | 2016-08-24 | 2020-11-04 | 東京エレクトロン株式会社 | Substrate processing equipment and substrate processing method |
KR102271566B1 (en) * | 2019-10-28 | 2021-07-01 | 세메스 주식회사 | Substrate treatment apparatus |
CN111458989B (en) * | 2020-04-15 | 2023-05-09 | Tcl华星光电技术有限公司 | Developing apparatus |
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JPH1140472A (en) * | 1997-07-17 | 1999-02-12 | Sony Corp | Substrate treating apparatus |
JP3445937B2 (en) * | 1998-06-24 | 2003-09-16 | 東京エレクトロン株式会社 | Multi-stage spin type substrate processing system |
JP3573445B2 (en) * | 1998-07-31 | 2004-10-06 | 東京エレクトロン株式会社 | Developing device and cleaning device |
JP4339026B2 (en) * | 2003-06-13 | 2009-10-07 | 東京エレクトロン株式会社 | Substrate processing equipment |
JP2005079219A (en) * | 2003-08-29 | 2005-03-24 | Tokyo Electron Ltd | Substrate processing apparatus |
JP2006286835A (en) * | 2005-03-31 | 2006-10-19 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
EP2051285B1 (en) * | 2007-10-17 | 2011-08-24 | Ebara Corporation | Substrate cleaning apparatus |
JP5451515B2 (en) * | 2010-05-06 | 2014-03-26 | 東京エレクトロン株式会社 | Chemical supply system, substrate processing apparatus including the same, and coating and developing system including the substrate processing apparatus |
JP5762925B2 (en) * | 2010-12-28 | 2015-08-12 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
JP5588418B2 (en) * | 2011-10-24 | 2014-09-10 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
JP5645796B2 (en) * | 2011-11-21 | 2014-12-24 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
US20140017615A1 (en) * | 2012-07-11 | 2014-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for resist coating and developing |
KR101512560B1 (en) * | 2012-08-31 | 2015-04-15 | 가부시키가이샤 스크린 홀딩스 | Substrate processing apparatus |
JP6057624B2 (en) * | 2012-09-03 | 2017-01-11 | 株式会社Screenセミコンダクターソリューションズ | Cup and substrate processing equipment |
JP6005604B2 (en) * | 2012-09-13 | 2016-10-12 | 東京エレクトロン株式会社 | Development processing equipment |
JP5954195B2 (en) * | 2013-01-24 | 2016-07-20 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
WO2015129623A1 (en) * | 2014-02-27 | 2015-09-03 | 株式会社Screenホールディングス | Substrate treatment device and substrate treatment method |
JP6778548B2 (en) * | 2016-08-24 | 2020-11-04 | 東京エレクトロン株式会社 | Substrate processing equipment and substrate processing method |
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