TWI657318B - Developing method - Google Patents
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- TWI657318B TWI657318B TW104139812A TW104139812A TWI657318B TW I657318 B TWI657318 B TW I657318B TW 104139812 A TW104139812 A TW 104139812A TW 104139812 A TW104139812 A TW 104139812A TW I657318 B TWI657318 B TW I657318B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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Abstract
本發明旨在確保顯影處理之面內均勻性的同時,並提升顯影處理之產率。本發明提供一種顯影處理方法,在晶圓之中心部,形成以純水稀釋過之稀釋顯影液的液灘(時間t1);之後,使晶圓加速至第1旋轉速度,以使該稀釋顯影液的液灘擴散至晶圓整面,而在該晶圓表面形成該稀釋顯影液之液膜(時間t2)。之後,在具有與晶圓平行之潤濕面的顯影液供給噴嘴、與該晶圓之間確保既定間隔之空隙的狀態下,由該顯影液供給噴嘴對晶圓之中心部供給顯影液,而在晶圓與該顯影液供給噴嘴之潤濕面之間,形成顯影液之液灘(時間t3)。一邊持續由顯影液供給噴嘴供給顯影液、一邊使晶圓旋轉,同時使該顯影液供給噴嘴由晶圓之中心部移動至晶圓之外周部。 The invention aims to ensure the in-plane uniformity of the developing process and improve the yield of the developing process. The invention provides a development processing method, in which a liquid beach of diluted developer solution diluted with pure water is formed at the center of the wafer (time t 1 ); and then, the wafer is accelerated to a first rotation speed to make the dilution The liquid beach of the developing solution spreads over the entire surface of the wafer, and a liquid film of the diluted developing solution is formed on the wafer surface (time t 2 ). Thereafter, in a state where a developer supply nozzle having a wetting surface parallel to the wafer and a predetermined gap is secured between the developer supply nozzle and the wafer, the developer supply nozzle supplies the developer solution to the center of the wafer, and Between the wafer and the wetting surface of the developer supply nozzle, a liquid beach of developer is formed (time t 3 ). While the developer is continuously supplied from the developer supply nozzle while the wafer is being rotated, the developer supply nozzle is moved from the center portion of the wafer to the outer peripheral portion of the wafer.
Description
本發明係關於對形成有光阻膜之基板進行顯影處理以在基板形成既定圖案顯之影處理方法、電腦記錄媒體及顯影處理裝置。 The present invention relates to a shadow processing method, a computer recording medium, and a development processing device for performing a development process on a substrate formed with a photoresist film to form a predetermined pattern on the substrate.
於例如半導體元件之製程中的光學微影步驟,係依序進行在例如作為基板之半導體晶圓(以下稱為「晶圓)上塗佈光阻液以形成光阻膜的光阻塗佈處理、對該光阻膜進行既定圖案之曝光的曝光處理、於曝光後促進光阻膜內之化學反應的加熱處理(曝光後烘烤)、使已曝光之光阻膜顯影之顯影處理等,而在晶圓上形成既定之光阻圖案。 In the optical lithography step in the manufacturing process of, for example, a semiconductor device, a photoresist coating process for sequentially coating a photoresist liquid on a semiconductor wafer (hereinafter referred to as a “wafer”) as a substrate to form a photoresist film is sequentially performed. , An exposure process for exposing the photoresist film to a predetermined pattern, a heat treatment (post-exposure bake) that promotes chemical reactions in the photoresist film after exposure, a development process for developing the exposed photoresist film, etc., and A predetermined photoresist pattern is formed on the wafer.
走筆至此,有關於顯影處理之方式,已知有一邊從具有與晶圓直徑大致相同之長度的長形噴嘴供給顯影液,一邊使該噴嘴從晶圓之一端朝向另一端平行移動之方式(專利文獻1)、以及對高速旋轉之晶圓上供給顯影液並使其擴散之方式(專利文獻2)等。 At this point in the writing process, there is a method of developing processing. A method is known in which the nozzle is moved in parallel from one end of the wafer to the other while supplying the developer from a long nozzle having a length approximately the same as the diameter of the wafer (patent Document 1), and a method of supplying and dispersing a developer on a wafer rotating at high speed (Patent Document 2).
[習知技術文獻] [Xizhi technical literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利第3614769號公報 [Patent Document 1] Japanese Patent No. 3614769
[專利文獻2]日本專利第4893799號公報 [Patent Document 2] Japanese Patent No. 4893799
然而,以如專利文獻1所示之長形噴嘴進行顯影處理的情況下,晶圓之一端與另一端接觸顯影液的時間會產生差異。此外,如專利文獻2所示,對旋轉之晶圓中心供給顯影液的情況下,晶圓中心部與晶圓外周部接觸顯影液之時間也會產生差異。其結果,在晶圓面內會產生顯影處理後之光阻圖案的線寬不均勻;然而隨著近年半導體元件之高度積體化所致之光阻圖案微細化,越來越無法容許肇因於顯影時間差異之線寬不均勻。 However, when developing processing is performed with a long nozzle as shown in Patent Document 1, there is a difference in the time during which one end of the wafer contacts the developing solution at the other end. In addition, as shown in Patent Document 2, when the developer is supplied to the center of the rotating wafer, there is a difference in the time during which the developer is brought into contact with the center of the wafer and the peripheral portion of the wafer. As a result, the line width of the photoresist pattern after the development process is uneven in the wafer surface; however, with the miniaturization of the photoresist pattern due to the high integration of semiconductor elements in recent years, it is becoming increasingly impossible to tolerate the cause. The line width is different in the development time difference.
有鑑於此,為了在晶圓面內進行均勻之顯影處理,正在探討使用具有與基板例如平行之潤濕面(wetted surface)的顯影液供給噴嘴(以下有時會將該顯影液供給噴嘴稱作「PAD噴嘴」)之手法。具體而言,首先,在顯影液供給噴嘴之潤濕面與晶圓之間保有既定間隔之空隙的狀態下,對靜止之基板上供給顯影液,以在顯影液供給噴嘴與晶圓之間形成顯影液之液膜。此時,係使顯影液供給噴嘴位於基板之中心部。接著,使晶圓以30rpm左右之低速旋轉,同時持續從顯影液供給噴嘴供給顯影液之狀態下,換言之,係維持顯影液供給噴嘴300與基板之間的顯影液膜之狀態下,如圖25所示,使顯影液供給噴嘴300移動至晶圓W 之外周部。藉此,對晶圓W全面供給顯影液Q,而可以在晶圓面內實現均勻之顯影處理。 In view of this, in order to perform a uniform development process on the wafer surface, the use of a developer supply nozzle having a wetted surface parallel to the substrate, for example, is being explored (hereinafter this developer supply nozzle is sometimes referred to as "PAD nozzle"). Specifically, first, the developer is supplied to a stationary substrate with a predetermined gap between the wetted surface of the developer supply nozzle and the wafer, so as to form between the developer supply nozzle and the wafer. Liquid film of developer. At this time, the developer supply nozzle is positioned at the center of the substrate. Next, the wafer is rotated at a low speed of about 30 rpm while the developing solution is continuously supplied from the developing solution supplying nozzle, in other words, the developing solution film between the developing solution supplying nozzle 300 and the substrate is maintained, as shown in FIG. 25 As shown, the developer supply nozzle 300 is moved to the wafer W Outer periphery. Thereby, the developing solution Q is fully supplied to the wafer W, and a uniform developing process can be realized in the wafer surface.
走筆至此,從提升晶圓處理之產率的觀點來看,顯影時間係極力縮短為佳。然而根據本案發明人團隊所見,使用PAD噴嘴之顯影處理若縮短顯影時間,會例如圖26所示,觀察到在晶圓面內螺旋狀地產生光阻圖案之線寬未達所要數值之處。圖26係量測每次拍攝到的晶圓面內複數處之光阻圖案的線寬,而以顏色濃淡表示各拍攝到之線寬不均勻的程度。又,圖26係使顯影時間為例如30秒之情況。但是,使顯影時間為60秒之情況下,如圖27所示,幾乎觀察不到螺旋狀之傾向,確認晶圓面內之線寬係大致均勻。 From this point of view, from the viewpoint of improving the yield of wafer processing, it is better to shorten the development time as much as possible. However, according to the team of the inventors of this case, if the development process using the PAD nozzle shortens the development time, as shown in FIG. 26, it is observed that the line width of the photoresist pattern spirally generated in the wafer surface does not reach the desired value. FIG. 26 measures the line width of the photoresist pattern at a plurality of positions on the wafer surface taken each time, and the degree of unevenness of the line width taken by each shot is represented by the color density. 26 shows a case where the development time is, for example, 30 seconds. However, when the development time was set to 60 seconds, as shown in FIG. 27, the spiral tendency was hardly observed, and it was confirmed that the line width in the wafer surface was substantially uniform.
本發明係有鑑於此點而研發者,其目的在於,在確保顯影處理之面內均勻性之同時,提升顯影處理之產率。 The present invention has been developed in view of this point, and its object is to improve the yield of the development process while ensuring the in-plane uniformity of the development process.
為達成前述目的,本發明提供一種顯影處理方法,供給顯影液至基板上,使已曝光有既定圖案之基板上的光阻膜顯影,其包括以下步驟:液灘形成步驟,於基板之中心部,形成以純水稀釋之稀釋顯影液的液灘;液膜形成步驟,於該液灘形成步驟之後,加速基板之旋轉,使該稀釋顯影液的液灘擴散至基板整面,在該基板表面形成該稀釋顯影液的液膜;顯影液供給步驟,於該液膜形成步驟之後,在具有潤濕面之顯影液供給噴嘴與該基板之間確保既定間隔之空隙的狀態下,一方面由該顯影液供給噴嘴供給顯影液,以在該基板與該顯影液供給噴嘴的潤濕面之間形成顯影液的液灘,一方面使該顯影液供給噴嘴在通過基板中心之徑向上移動,供給顯影液至基板上。 In order to achieve the foregoing object, the present invention provides a developing processing method for supplying a developing solution to a substrate to develop a photoresist film on a substrate that has been exposed to a predetermined pattern. The method includes the following steps: a liquid beach forming step in the center of the substrate Forming a liquid beach of the diluted developer diluted with pure water; a liquid film forming step, after the liquid beach forming step, accelerating the rotation of the substrate to diffuse the liquid beach of the diluted developer to the entire surface of the substrate, Forming a liquid film of the diluted developer; a developer supplying step; and after the liquid film forming step, in a state of ensuring a predetermined gap between the developer supplying nozzle having a wet surface and the substrate, The developer supply nozzle supplies the developer solution to form a liquid beach of the developer solution between the substrate and the wetted surface of the developer supply nozzle. On the one hand, the developer solution nozzle is moved in a radial direction passing through the center of the substrate to supply development. To the substrate.
本案發明人團隊針對縮短顯影時間時螺旋狀發生之線寬不均勻的原因,進行了精心之調查。其結果,得知如圖26般之螺旋形狀,係起因於顯影初期階段所產生之溶解生成物。又,之所以如上述般使顯影時間為60秒左右之情況下,就不會產生螺旋狀之傾向的原因,推測係因為藉由確保夠長的顯影時間,則溶解生成物之影響就會相對變小所致。 The team of the inventors of this case conducted a careful investigation into the cause of the uneven line width that occurred spirally when the development time was shortened. As a result, it was found that the spiral shape as shown in FIG. 26 is due to the dissolution product generated in the initial stage of development. In addition, when the development time is set to about 60 seconds as described above, there is no spiral tendency. It is presumed that by ensuring a long development time, the influence of the dissolved product will be relatively small. Caused by becoming smaller.
本發明係基於此見解所為者,根據本發明,係首先在基板之中心部形成稀釋顯影液的液灘,接著旋轉基板以使稀釋顯影液的液灘擴散至基板之整面,而在基板表面形成稀釋顯影液之液面。此時,雖然會因為稀釋顯影液而在基板上產生溶解生成物,但藉由使基板旋轉,而會使溶解生成物與稀釋顯影液一併從基板上排出。接著,在具有潤濕面的顯影液供給噴嘴與基板之間形成液膜,一邊持續由顯影液供給噴嘴供給顯影液、一邊使基板旋轉,同時使顯影液供給噴嘴移動,而供給顯影液至基板上。此時,由於已藉由稀釋顯影液而去除了溶解生成物,因此能在不受溶解生成物之影響的情況下,進行顯影處理。其結果,即便在較習知技術縮短顯影時間之情況下,亦可在面內均勻地進行顯影處理。因此若藉由本發明,可以在確保顯影處理之面內均勻性的同時,提升顯影處理之產率。 The present invention is based on this knowledge. According to the present invention, a liquid beach of diluted developer is first formed at the center of the substrate, and then the substrate is rotated to diffuse the liquid beach of diluted developer to the entire surface of the substrate, and on the substrate surface. The liquid surface of the diluted developer is formed. At this time, although a dissolved product is generated on the substrate by diluting the developing solution, by rotating the substrate, the dissolved product and the diluted developing solution are discharged from the substrate together. Next, a liquid film is formed between the developer supply nozzle having the wet surface and the substrate. While the developer is continuously supplied by the developer supply nozzle, the substrate is rotated while the developer supply nozzle is moved to supply the developer solution to the substrate. on. At this time, since the dissolved product has been removed by diluting the developing solution, the development process can be performed without being affected by the dissolved product. As a result, even when the development time is shortened compared with the conventional technique, the development process can be performed uniformly in the plane. Therefore, with the present invention, it is possible to improve the yield of the development process while ensuring the in-plane uniformity of the development process.
該顯影液供給步驟之該顯影液供給噴嘴之開始移動的地點,係該基板之中心部,該顯影液供給噴嘴之結束移動的地點,係該基板之外周部亦可。 The place where the developer supply nozzle of the developer supply step starts to move is the center portion of the substrate, and the place where the developer supply nozzle ends the movement may be the outer peripheral portion of the substrate.
該顯影液供給步驟之該顯影液供給噴嘴之開始移動的地點,係該基板之外周部,該顯影液供給噴嘴之結束移動的地點,係該基板之中心部亦可。 The place where the developer supply nozzle of the developer supply step starts to move is the outer peripheral portion of the substrate, and the place where the developer supply nozzle ends the movement may be the center portion of the substrate.
於該液灘形成步驟之稀釋顯影液的液灘之形成,係供給純水至靜止的基板之中心部以形成純水的液灘,接著,藉由供給顯影液至該純水的液灘上以進行亦可。 The formation of the liquid beach that dilutes the developing solution in the liquid beach forming step is to supply pure water to the center portion of the stationary substrate to form a liquid beach of pure water, and then supply the developing solution to the liquid beach of the pure water. You can do it.
於該液灘形成步驟中,稀釋顯影液的液灘之形成,係對靜止的基板之中心部,供給預先以純水稀釋過的稀釋顯影液來進行亦可。 In the step of forming the liquid beach, the formation of the liquid beach that dilutes the developing solution may be performed by supplying a diluted developing solution that has been diluted with pure water in advance to the center portion of the stationary substrate.
於該顯影液供給步驟,該顯影液供給噴嘴之移動,係一邊使該顯影液供給噴嘴之底面以與該基板之旋轉方向相反之方向自轉,一邊進行亦可。 In the developer supply step, the developer supply nozzle may be moved while the bottom surface of the developer supply nozzle is rotated in a direction opposite to the rotation direction of the substrate.
該液膜形成步驟,係使基板加速至第1旋轉速度,以使該稀釋顯影液的液灘擴散至基板整面;該顯影液供給步驟,係使基板一邊以比第1旋轉速度慢的第2旋轉速度旋轉,一邊使該顯影液供給噴嘴由基板之中心部移動至基板之外周部亦可。 The liquid film forming step is to accelerate the substrate to a first rotation speed to diffuse the liquid beach of the diluted developer solution over the entire surface of the substrate; and the developer supply step is to make the substrate side at a slower speed than the first rotation speed. 2 The rotation speed may be rotated while moving the developer supply nozzle from the center portion of the substrate to the outer peripheral portion of the substrate.
該第1旋轉速度係1500rpm~2000rpm;該第2旋轉速度係15rpm~30rpm亦可。 The first rotation speed is 1500 rpm to 2000 rpm; the second rotation speed is 15 rpm to 30 rpm.
於該液膜形成步驟,將靜止的基板加速至比第1旋轉速度慢的第3旋轉速度;之後,將基板的旋轉速度減速至比第3旋轉速度慢的第4旋轉速度;之後,將基板加速至第1旋轉速度亦可。 In this liquid film forming step, the stationary substrate is accelerated to a third rotation speed that is slower than the first rotation speed; thereafter, the substrate rotation speed is reduced to a fourth rotation speed that is slower than the third rotation speed; and then, the substrate It is also possible to accelerate to the first rotation speed.
該第3旋轉速度係200rpm~400rpm亦可。 The third rotation speed may be 200 rpm to 400 rpm.
另一觀點之本發明係提供一種電腦記錄媒體,儲存有程式且可供讀取,該程式係在控制顯影處理裝置之控制部的電腦上動作,以使該顯影處理裝置執行前述顯影處理方法。 Another aspect of the present invention is to provide a computer recording medium that stores a program and can be read. The program operates on a computer that controls a control unit of a developing processing device to cause the developing processing device to execute the aforementioned developing processing method.
再一觀點之本發明係提供一種顯影處理裝置,供給顯影液至基板上,使已曝光有既定圖案之基板上的光阻膜顯影,其包括:基板固持部,固持基板之背面,並使該固持之基板以鉛直軸為中心旋轉;顯影液供給噴嘴,具有潤濕面,並於該潤濕面形成供給顯影液之供給孔;移動機構,使該顯影液供給噴嘴移動;純水供給噴嘴,供給純水至基板上;以及另一移動機構,使該純水供給噴嘴移動。 A still further aspect of the present invention is to provide a developing processing device that supplies a developing solution to a substrate and develops a photoresist film on the substrate that has been exposed to a predetermined pattern, and includes a substrate holding portion, holding the back surface of the substrate, and The fixed substrate rotates around a vertical axis; the developer supply nozzle has a wetting surface, and a supply hole for supplying the developer is formed on the wet surface; a moving mechanism moves the developer supply nozzle; and a pure water supply nozzle, Supplying pure water to the substrate; and another moving mechanism to move the pure water supply nozzle.
再另一觀點之本發明係提供一種顯影處理裝置,供給顯影液至基板上,使已曝光有既定圖案之基板上的光阻膜顯影,其包括:基板固持部,固持基板之背面,並使該固持之基板以鉛直軸為中心旋轉;顯影液供給噴嘴,具有潤濕面,並於該潤濕面形成供給顯影液之供給孔;移動機構,使該顯影液供給噴嘴移動;稀釋顯影液供給噴嘴,將稀釋顯影液供給至基板上;以及另一移動機構,使該稀釋顯影液供給噴嘴移動。 Still another aspect of the present invention is to provide a developing processing device that supplies a developing solution to a substrate and develops a photoresist film on the substrate that has been exposed to a predetermined pattern. The fixed substrate rotates around a vertical axis; the developer supply nozzle has a wetting surface, and a supply hole for supplying the developer is formed on the wet surface; a moving mechanism moves the developer supply nozzle; and a diluted developer supply A nozzle to supply the diluted developer to the substrate; and another moving mechanism to move the diluted developer to the nozzle.
藉由本發明,可以在確保顯影處理之面內均勻性之同時,提升顯影處理之產率。 With the present invention, it is possible to improve the yield of the development process while ensuring the in-plane uniformity of the development process.
1‧‧‧基板處理系統 1‧‧‧ substrate processing system
10‧‧‧卡匣站 10‧‧‧Cassette Station
11‧‧‧處理站 11‧‧‧processing station
12‧‧‧曝光裝置 12‧‧‧ exposure device
13‧‧‧界面站 13‧‧‧Interface Station
20‧‧‧卡匣載置台 20‧‧‧ Cassette Loading Stage
21‧‧‧卡匣載置板 21‧‧‧ Cassette Loading Board
22‧‧‧搬送路 22‧‧‧ transport road
23‧‧‧晶圓搬送裝置 23‧‧‧ Wafer Transfer Device
30‧‧‧顯影處理裝置 30‧‧‧Development processing device
31‧‧‧下部反射防止膜形成裝置 31‧‧‧Lower reflection preventing film forming device
32‧‧‧光阻塗佈裝置 32‧‧‧Photoresist coating device
33‧‧‧上部反射防止膜形成裝置 33‧‧‧ Upper reflection preventing film forming device
40~43‧‧‧熱處理裝置 40 ~ 43‧‧‧ heat treatment equipment
50、51、52、53、54、55、56、60、61、62‧‧‧移交裝置 50, 51, 52, 53, 54, 55, 56, 60, 61, 62 ‧‧‧ handover device
70‧‧‧晶圓搬送裝置 70‧‧‧ Wafer Transfer Device
80‧‧‧往返搬送裝置 80‧‧‧ Round-trip transfer device
100‧‧‧晶圓搬送裝置 100‧‧‧ Wafer Transfer Device
110‧‧‧晶圓搬送裝置 110‧‧‧ Wafer Transfer Device
111‧‧‧移交裝置 111‧‧‧ handover device
130‧‧‧處理容器 130‧‧‧handling container
140‧‧‧旋轉夾頭 140‧‧‧Rotary Chuck
141‧‧‧夾頭驅動部 141‧‧‧Chuck drive
142‧‧‧杯體 142‧‧‧ cup body
143‧‧‧排出管 143‧‧‧Exhaust pipe
144‧‧‧排氣管 144‧‧‧Exhaust pipe
150‧‧‧軌道 150‧‧‧ track
151‧‧‧第1臂體 151‧‧‧The first arm
152‧‧‧第2臂體 152‧‧‧ 2nd Arm
153‧‧‧第3臂體 153‧‧‧ 3rd arm body
154‧‧‧純水供給噴嘴 154‧‧‧Pure water supply nozzle
155‧‧‧噴嘴驅動部 155‧‧‧Nozzle driving unit
156‧‧‧待機部 156‧‧‧Standby
157‧‧‧待機部 157‧‧‧Standby
158‧‧‧稀釋用顯影液供給噴嘴 158‧‧‧ dilution developer supply nozzle
159‧‧‧噴嘴驅動部 159‧‧‧Nozzle driving unit
160‧‧‧待機部 160‧‧‧Standby
161‧‧‧顯影液供給噴嘴 161‧‧‧Developer supply nozzle
161a‧‧‧下端面 161a‧‧‧ bottom face
161b‧‧‧供給孔 161b‧‧‧ supply hole
162‧‧‧旋轉驅動機構 162‧‧‧Rotary drive mechanism
163‧‧‧噴嘴驅動部 163‧‧‧Nozzle driving unit
164‧‧‧待機部 164‧‧‧Standby
200‧‧‧控制部 200‧‧‧Control Department
250‧‧‧顯影液管 250‧‧‧Developer tube
251‧‧‧稀釋顯影液管 251‧‧‧ diluted developer tube
252‧‧‧純水管 252‧‧‧Pure water pipe
300‧‧‧顯影液供給噴嘴 300‧‧‧Developer supply nozzle
C‧‧‧卡匣 C‧‧‧Cassette
D‧‧‧晶圓搬送區域 D‧‧‧ Wafer Transfer Area
G1‧‧‧第1區塊 G1‧‧‧ Block 1
G2‧‧‧第2區塊 G2‧‧‧Block 2
G3‧‧‧第3區塊 G3‧‧‧ Block 3
G4‧‧‧第4區塊 G4‧‧‧ Block 4
L‧‧‧直徑 L‧‧‧ diameter
M‧‧‧稀釋顯影液 M‧‧‧ diluted developer
S1~S6‧‧‧步驟 Steps S1 ~ S6‧‧‧‧
T1~T6‧‧‧步驟 T1 ~ T6‧‧‧‧steps
t0~t6‧‧‧時間 t 0 ~ t 6 ‧‧‧ time
P‧‧‧純水 P‧‧‧Pure water
R‧‧‧光阻膜 R‧‧‧Photoresistive film
Q‧‧‧顯影液 Q‧‧‧Developer
U‧‧‧溶解生成物 U‧‧‧ Dissolved product
W‧‧‧晶圓 W‧‧‧ Wafer
X、Y、θ‧‧‧方向 X, Y, θ‧‧‧ directions
[圖1]概略顯示本實施形態之基板處理系統的結構之俯視圖。 [FIG. 1] A plan view schematically showing a configuration of a substrate processing system according to this embodiment.
[圖2]概略顯示本實施形態之基板處理系統的結構之側視圖。 [Fig. 2] A side view schematically showing a configuration of a substrate processing system according to this embodiment.
[圖3]概略顯示本實施形態之基板處理系統的結構之側視圖。 [FIG. 3] A side view schematically showing a configuration of a substrate processing system according to this embodiment.
[圖4]概略顯示顯影處理裝置的結構之縱剖面圖。 4 is a longitudinal sectional view schematically showing a configuration of a developing processing device.
[圖5]概略顯示顯影處理裝置的結構之橫剖面圖。 5 is a cross-sectional view schematically showing a configuration of a developing processing device.
[圖6]概略顯示顯影液供給噴嘴的結構之立體圖。 6 is a perspective view schematically showing a structure of a developer supply nozzle.
[圖7]說明晶圓處理的主要步驟之流程圖。 [FIG. 7] A flowchart explaining the main steps of wafer processing.
[圖8]顯示顯影處理步驟中之晶圓旋轉速度與各機器的動作之時序圖。 [Fig. 8] A timing chart showing the wafer rotation speed and the operation of each machine in the development processing step.
[圖9]顯示在晶圓上形成了純水的液灘之狀態之縱剖面說明圖。 [Fig. 9] A longitudinal sectional explanatory view showing a state where a liquid beach of pure water is formed on a wafer.
[圖10]顯示對純水的液灘上供給了稀釋用顯影液的狀態之縱剖面說明圖。 [Fig. 10] Fig. 10 is a longitudinal sectional explanatory view showing a state where a developing solution for dilution is supplied to a liquid beach of pure water.
[圖11]顯示旋轉晶圓,而使稀釋顯影液朝晶圓W之外周方向擴散的狀態之縱剖面說明圖。 11 is a longitudinal cross-sectional explanatory view showing a state where the wafer is rotated and the diluted developer is diffused in the outer circumferential direction of the wafer W.
[圖12]顯示使顯影液供給噴嘴移動至晶圓中心部上方的狀態之縱剖面說明圖。 [Fig. 12] Fig. 12 is a longitudinal sectional explanatory view showing a state in which a developer supply nozzle is moved above a wafer center portion.
[圖13]顯示於顯影液供給噴嘴之下端面與晶圓之間形成了顯影液之液膜的狀態之縱剖面說明圖。 13 is a longitudinal sectional explanatory view showing a state in which a liquid film of a developer is formed between a lower end surface of the developer supply nozzle and a wafer.
[圖14]顯示一邊供給顯影液,一邊使顯影液供給噴嘴朝向晶圓之外周方向移動的狀態之縱剖面說明圖。 14 is a longitudinal cross-sectional explanatory view showing a state in which the developer supply nozzle is moved toward the outer peripheral direction of the wafer while the developer solution is being supplied.
[圖15]顯示一邊供給顯影液,一邊使顯影液供給噴嘴朝向晶圓之外周方向移動的狀態之平面說明圖。 [FIG. 15] A plan explanatory view showing a state where the developer supply nozzle is moved toward the outer peripheral direction of the wafer while the developer solution is being supplied.
[圖16]顯示使用本實施形態之顯影處理方法進行過顯影處理之光阻圖案的線寬不均勻之說明圖。 [FIG. 16] An explanatory diagram showing a line width unevenness of a photoresist pattern subjected to a development process using the development process method of this embodiment.
[圖17]顯示直接對光阻膜上供給稀釋顯影液的狀態之縱剖面說明圖。 17 is a longitudinal sectional explanatory view showing a state in which a diluted developer is directly supplied to the photoresist film.
[圖18]顯示使用顯影液供給噴嘴以供給稀釋用顯影液的樣態的縱剖面說明圖。 18 is a longitudinal sectional explanatory view showing a state where a developing solution supply nozzle is used to supply a developing solution for dilution.
[圖19]顯示使用顯影液供給噴嘴以形成稀釋顯影液的液灘之樣態之剖面說明圖。 19 is a cross-sectional explanatory view showing a state in which a developer liquid supply nozzle is used to form a liquid beach of a diluted developer solution.
[圖20]概略顯示另一實施形態之顯影液供給噴嘴的結構之說明圖。 [FIG. 20] An explanatory view schematically showing a configuration of a developer supply nozzle according to another embodiment.
[圖21]概略顯示另一實施形態之顯影液供給噴嘴的結構之說明圖。 [FIG. 21] An explanatory view schematically showing a configuration of a developer supply nozzle according to another embodiment.
[圖22]概略顯示另一實施形態之顯影液供給噴嘴的結構之說明圖。 [FIG. 22] An explanatory view schematically showing a configuration of a developer supply nozzle according to another embodiment.
[圖23]概略顯示另一實施形態之顯影液供給噴嘴的結構之說明圖。 [Fig. 23] An explanatory view schematically showing a configuration of a developer supply nozzle according to another embodiment.
[圖24]顯示一邊供給顯影液,一邊使顯影液供給噴嘴朝向晶圓之中心部移動的樣態之縱剖面說明圖。 24 is a longitudinal sectional explanatory view showing a state in which a developer supply nozzle is moved toward a center portion of a wafer while a developer solution is being supplied.
[圖25]顯示使用了PAD噴嘴之顯影處理方法一例之平面說明圖。 [Fig. 25] A plan explanatory view showing an example of a development processing method using a PAD nozzle.
[圖26]顯示光阻圖案之線寬不均勻之說明圖。 [Fig. 26] An explanatory diagram showing a line width unevenness of a photoresist pattern.
[圖27]顯示光阻圖案之線寬不均勻之說明圖。 [Fig. 27] An explanatory diagram showing a line width unevenness of a photoresist pattern.
以下,將針對本發明之實施形態進行說明。圖1係概略顯示基板處理系統1的結構之說明圖,該基板處理系統1具備實施本實施形態之顯影處理方法的顯影處理裝置。圖2及圖3分別係概略顯示基板處理系統1的內部結構之正面圖與背面圖。 Hereinafter, embodiments of the present invention will be described. FIG. 1 is an explanatory diagram schematically showing the configuration of a substrate processing system 1 including a development processing apparatus that implements the development processing method of the present embodiment. 2 and 3 are a front view and a rear view, respectively, schematically showing the internal structure of the substrate processing system 1.
基板處理系統1如圖1所示,具有將卡匣站10、處理站11、以及界面站13一體連接之結構;該卡匣站10係供容納複數枚晶圓W之卡匣C搬入搬出;該處理站 11係具備對晶圓W施作既定處理之複數的各種處理裝置;該界面站13係在與處理站11鄰接之曝光裝置12之間進行晶圓W之移交。 As shown in FIG. 1, the substrate processing system 1 has a structure in which the cassette station 10, the processing station 11, and the interface station 13 are integrally connected; the cassette station 10 is used for loading and unloading a cassette C containing a plurality of wafers W; The processing station 11 is provided with a plurality of various processing devices that perform predetermined processing on the wafer W. The interface station 13 transfers the wafer W between the exposure devices 12 adjacent to the processing station 11.
於卡匣站10,設有卡匣載置台20。於卡匣載置台20,設有複數的卡匣載置板21,其係在對基板處理系統1之外部搬入搬出卡匣C時,載置卡匣C。 A cassette mounting table 20 is provided at the cassette station 10. A plurality of cassette mounting plates 21 are provided on the cassette mounting table 20, and the cassettes C are mounted when the cassette C is carried in and out of the substrate processing system 1.
於卡匣站10,設有在如圖1所示之X方向上延伸之搬送路22上移動自如的晶圓搬送裝置23。晶圓搬送裝置23係在上下方向及繞鉛直軸(θ方向)方向也可移動自如,可以在各卡匣載置板21上的卡匣C、與後述之處理站11的第3區塊G3之移交裝置之間搬送晶圓W。 The cassette station 10 is provided with a wafer transfer device 23 that can move freely on a transfer path 22 extending in the X direction as shown in FIG. 1. The wafer transfer device 23 can be moved freely in the vertical direction and the direction around the vertical axis (θ direction). The cassette C on each cassette mounting plate 21 and the third block G3 of the processing station 11 described later can be moved. The wafer W is transferred between the transfer devices.
於處理站11,設有具備各種裝置之例如4個的複數區塊G1、G2、G3、G4。例如於處理站11之正面側(圖1之X方向負方向側),設有第1區塊G1,於處理站11之背面側(圖1之X方向正方向側),設有第2區塊G2。又,於處理站11之卡匣站10側(圖1之Y方向負方向側),設有第3區塊G3,於處理站11之界面站13側(圖1之Y方向正方向側),設有第4區塊G4。 The processing station 11 is provided with, for example, four plural blocks G1, G2, G3, and G4 including various devices. For example, a first block G1 is provided on the front side of the processing station 11 (the negative direction side in the X direction in FIG. 1), and a second area is provided on the back side of the processing station 11 (the positive direction side in the X direction in FIG. 1). Block G2. In addition, a third block G3 is provided on the cassette station 10 side of the processing station 11 (the negative direction side in the Y direction in FIG. 1), and on the interface station 13 side of the processing station 11 (the positive direction side in the Y direction in FIG. 1). , With the fourth block G4.
例如於第1區塊G1,如圖2所示,由下依序配置著複數之液處理裝置,例如對晶圓W進行顯影處理之顯影處理裝置30、在晶圓W之光阻膜的下層形成反射防止膜(以下稱為「下部反射防止膜」)之下部反射防止膜形成裝置31、對晶圓W塗佈光阻液以形成光阻膜之光阻塗佈裝置32、以及在晶圓W之光阻膜的上層形成反射防止膜(以下稱為「上部反射防止膜」)之上部反射防止膜形成裝置33。 For example, in the first block G1, as shown in FIG. 2, a plurality of liquid processing devices are sequentially arranged from the bottom, such as a developing processing device 30 for developing the wafer W, and a lower layer of a photoresist film on the wafer W Forming an anti-reflection film (hereinafter referred to as "lower anti-reflection film"), a lower anti-reflection film forming device 31, a photoresist coating device 32 for coating a wafer W with a photoresist liquid to form a photoresist film, and The upper layer of the W resist film forms an anti-reflection film (hereinafter referred to as an "upper anti-reflection film") and an upper anti-reflection film forming device 33.
例如顯影處理裝置30、下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33係分別在水平方向配置成各排列3個。又,此等顯影處理裝置30、下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33之數量及配置,可以任意選擇。 For example, the development processing device 30, the lower anti-reflection film forming device 31, the photoresist coating device 32, and the upper anti-reflection film forming device 33 are each arranged in a horizontal direction in an arrangement of three. In addition, the number and arrangement of the development processing device 30, the lower reflection preventing film forming device 31, the photoresist coating device 32, and the upper reflection preventing film forming device 33 can be arbitrarily selected.
於此等下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33,對例如晶圓W上進行塗佈既定塗佈液的旋轉塗佈。於旋轉塗佈,係例如由塗佈噴嘴對晶圓W上釋出塗佈液,並且使晶圓W旋轉,而使塗佈液在晶圓W之表面擴散。又,關於顯影處理裝置30之結構,容待後述。 In these lower anti-reflection film forming devices 31, photoresist coating devices 32, and upper anti-reflection film forming devices 33, for example, spin coating is performed on a wafer W by applying a predetermined coating liquid. In spin coating, for example, a coating nozzle releases a coating liquid onto the wafer W, and the wafer W is rotated to spread the coating liquid on the surface of the wafer W. The structure of the developing device 30 will be described later.
例如於第2區塊G2,如圖3所示,設有進行晶圓W之加熱及冷却等熱處理之複數的熱處理裝置40~43。 For example, in the second block G2, as shown in FIG. 3, a plurality of heat treatment apparatuses 40 to 43 for performing heat treatment such as heating and cooling of the wafer W are provided.
例如於第3區塊G3,由下依序設有複數之移交裝置50、51、52、53、54、55、56。再者,於第4區塊G4,由下依序設有複數之移交裝置60、61、62。 For example, in the third block G3, a plurality of transfer devices 50, 51, 52, 53, 54, 55, 56 are provided in this order. Furthermore, in the fourth block G4, a plurality of transfer devices 60, 61, and 62 are provided in this order.
如圖1所示,由第1區塊G1~第4區塊G4所圍成的區域,形成晶圓搬送區域D。於晶圓搬送區域D,配置有複數之晶圓搬送裝置70,其具有可在例如Y方向、X方向、θ方向及上下方向移動自如之搬送臂體。晶圓搬送裝置70可以在晶圓搬送區域D內移動,並對周圍之第1區塊G1、第2區塊G2、第3區塊G3及第4區塊G4內的既定裝置搬送晶圓W。 As shown in FIG. 1, an area surrounded by the first block G1 to the fourth block G4 forms a wafer transfer area D. In the wafer transfer area D, a plurality of wafer transfer devices 70 are disposed, and the wafer transfer area 70 includes a transfer arm body that can move freely in, for example, the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer device 70 can move within the wafer transfer area D and transfer wafers W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. .
再者,於晶圓搬送區域D,設有在第3區塊G3與第4區塊G4之間直線式搬送晶圓W之往返搬送裝置80。 Further, in the wafer transfer area D, a round-trip transfer device 80 for linearly transferring the wafer W between the third block G3 and the fourth block G4 is provided.
往返搬送裝置80,係在例如圖3之Y方向上直線式地移動自如。往返搬送裝置80,係以支持晶圓W之狀態而在Y方向上移動,可以在第3區塊G3之移交裝置52與第4區塊G4之移交裝置62之間搬送晶圓W。 The reciprocating conveying device 80 can move linearly in the Y direction in FIG. 3, for example. The round-trip transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 in the third block G3 and the transfer device 62 in the fourth block G4.
如圖1所示,於比鄰第3區塊G3之X方向正方向側,設有晶圓搬送裝置100。晶圓搬送裝置100具有可在例如X方向、θ方向及上下方向上移動自如之搬送臂體。晶圓搬送裝置100係以支持著晶圓W之狀態而上下移動,可以對第3區塊G3內之各移交裝置搬送晶圓W。 As shown in FIG. 1, a wafer transfer device 100 is provided on the X-direction positive side adjacent to the third block G3. The wafer transfer apparatus 100 includes a transfer arm which can move freely in, for example, the X direction, the θ direction, and the vertical direction. The wafer transfer device 100 moves up and down while supporting the wafer W, and can transfer the wafer W to each transfer device in the third block G3.
於界面站13,設有晶圓搬送裝置110與移交裝置111。晶圓搬送裝置110具有可在例如Y方向、θ方向及上下方向上移動自如之搬送臂體。晶圓搬送裝置110係例如以搬送臂體支持晶圓W,而可以在第4區塊G4內之各移交裝置、移交裝置111及曝光裝置12之間搬送晶圓W。 The interface station 13 is provided with a wafer transfer device 110 and a transfer device 111. The wafer transfer device 110 includes a transfer arm body that can move freely in, for example, the Y direction, the θ direction, and the vertical direction. The wafer transfer device 110 supports the wafer W with a transfer arm, for example, and can transfer the wafer W between each transfer device, the transfer device 111 and the exposure device 12 in the fourth block G4.
接著,針對上述之顯影處理裝置30的結構,進行說明。顯影處理裝置30如圖4所示,具有可使內部密閉之處理容器130。於處理容器130之側面,形成有晶圓W之搬入搬出口(未圖示)。 Next, the structure of the above-mentioned development processing apparatus 30 is demonstrated. As shown in FIG. 4, the development processing device 30 includes a processing container 130 capable of sealing the inside. A carry-in / out port (not shown) for the wafer W is formed on the side of the processing container 130.
於處理容器130內,設有作為基板固持部之旋轉夾頭140,其固持著晶圓W而使其旋轉。旋轉夾頭140可以藉由例如馬達等之夾頭驅動部141,而以既定速度旋轉。再者,於夾頭驅動部141設有例如壓缸等的昇降驅動機構,旋轉夾頭140係昇降自如。 In the processing container 130, a rotation chuck 140 serving as a substrate holding portion is provided, which holds and rotates the wafer W. The rotary chuck 140 can be rotated at a predetermined speed by a chuck driving section 141 such as a motor. In addition, the chuck drive unit 141 is provided with a lifting drive mechanism such as a pressure cylinder, and the rotary chuck 140 is capable of lifting and lowering freely.
在旋轉夾頭140之周圍,設有承接自晶圓W飛散或落下之液體並加以回收之杯體142。於杯體142之底面,連接有將回收之液體加以排出之排出管143、以及將杯體142內之蒙氣加以排出之排氣管144。 Around the rotary chuck 140, a cup 142 is provided for receiving and recovering the liquid scattered or dropped from the wafer W. To the bottom surface of the cup body 142, an exhaust pipe 143 for discharging the recovered liquid and an exhaust pipe 144 for exhausting the air in the cup body 142 are connected.
如圖5所示,於杯體142之X方向負方向(圖5之下方向)側,形成有沿著Y方向(圖5之左右方向)延伸之軌道150。軌道150係由例如杯體142之Y方向負方向(圖5之左方向)側的外側,形成至Y方向正方向(圖5之右方向)側的外側。於軌道150,安裝有例如3支之臂體151、152、153。 As shown in FIG. 5, a track 150 extending along the Y direction (left-right direction in FIG. 5) is formed on the side of the X-direction negative direction (lower direction in FIG. 5) of the cup 142. The rail 150 is formed, for example, from the outer side of the negative Y-direction (left direction in FIG. 5) side of the cup 142 to the outer side of the positive Y-direction (right direction in FIG. 5) side. On the rail 150, for example, three arm bodies 151, 152, and 153 are mounted.
第1臂體151支撐著供給純水之純水供給噴嘴154。第1臂體151係藉由圖5所示之噴嘴驅動部155,而在軌道150上移動自如。藉此,純水供給噴嘴154可以由設置於杯體142之Y方向正方向側之外側的待機部156,通過杯體142內之晶圓W的中心部上方,而移動至杯體142之Y方向負方向側之外側的待機部157。 The first arm body 151 supports a pure water supply nozzle 154 that supplies pure water. The first arm body 151 is free to move on the rail 150 by the nozzle driving unit 155 shown in FIG. 5. Thereby, the pure water supply nozzle 154 can be moved to the Y of the cup 142 from the standby portion 156 provided on the outer side of the positive direction side of the Y direction of the cup 142 through the center portion of the wafer W in the cup 142. The standby portion 157 on the outer side of the negative direction side.
第2臂體152支持著在後述之第1液灘形成步驟供給稀釋用顯影液的稀釋用顯影液供給噴嘴158。第2臂體152係藉由圖5所示之噴嘴驅動部159,而在軌道150上移動自如。藉此,稀釋用顯影液供給噴嘴158,可以由設置於杯體142之Y方向正方向側之外側的待機部160,移動至杯體142內之晶圓W的中心部上方。待機部160係設於待機部156之Y方向正方向側。作為稀釋用顯影液,可以使用例如濃度為2.38%之TMAH(四甲基氫氧化銨)。 The second arm body 152 supports a dilution developer supply nozzle 158 for supplying a dilution developer in a first liquid beach formation step described later. The second arm 152 is free to move on the rail 150 by the nozzle driving unit 159 shown in FIG. 5. Thereby, the dilution developer supply nozzle 158 can be moved above the center portion of the wafer W in the cup 142 from the standby portion 160 provided on the outside of the positive direction side in the Y direction of the cup 142. The standby section 160 is provided on the Y-direction positive side of the standby section 156. As the developing solution for dilution, for example, TMAH (tetramethylammonium hydroxide) having a concentration of 2.38% can be used.
第3臂體153藉由旋轉驅動機構162,支持著供給顯影液之顯影液供給噴嘴161。顯影液供給噴嘴161係例如圖6所示,整體呈圓筒形狀,其下端面161a係與晶圓W例如成平行。此下端面161a,發揮與顯影液接觸之潤濕面的功能。下端面 161a未必要與晶圓W成平行,只要是可以在後述之顯影液的液灘形成步驟中,在顯影液供給噴嘴161之下端面161a與晶圓W之間形成顯影液之液膜的形狀,亦可具有例如朝下凸出之和緩球面形狀或傾斜面。此外,於顯影液供給噴嘴161之下端面161a的例如中心部,形成有供給顯影液之供給孔161b。顯影液供給噴嘴161之直徑L,係構成為小於晶圓W之直徑。由顯影液供給噴嘴161所供給之顯影液,也與由稀釋用顯影液供給噴嘴158所供給之顯影液相同,使用濃度為2.38%的TMAH。又,於本實施形態,晶圓W之直徑係例如300mm,顯影液供給噴嘴161之直徑L係例如50mm。此外,顯影液供給噴嘴161係由具有耐化學腐蝕性(chemical resistance)之材質所構成,例如PTFE等。 The third arm body 153 supports the developer supply nozzle 161 for supplying the developer by the rotation driving mechanism 162. The developer supply nozzle 161 is, for example, as shown in FIG. 6, and has a cylindrical shape as a whole, and a lower end surface 161 a thereof is parallel to the wafer W, for example. The lower end surface 161a functions as a wetting surface in contact with the developer. Lower face 161a does not need to be parallel to the wafer W, as long as it is a shape that can form a liquid film of the developing solution between the lower end surface 161a of the developing solution supply nozzle 161 and the wafer W in the step of forming a liquid beach of the developing solution described later, It may also have, for example, a gently spherical shape or an inclined surface that projects downward. A supply hole 161b for supplying a developer is formed in, for example, a central portion of the lower end surface 161a of the developer supply nozzle 161. The diameter L of the developer supply nozzle 161 is smaller than the diameter of the wafer W. The developer supplied from the developer supply nozzle 161 is the same as the developer supplied from the dilution developer supply nozzle 158, and uses TMAH at a concentration of 2.38%. In this embodiment, the diameter of the wafer W is, for example, 300 mm, and the diameter L of the developer supply nozzle 161 is, for example, 50 mm. The developer supply nozzle 161 is made of a material having chemical resistance, such as PTFE.
旋轉驅動機構162支持著顯影液供給噴嘴161之頂面,可以使該顯影液供給噴嘴161以鉛直軸為中心旋轉。 The rotation driving mechanism 162 supports the top surface of the developer supply nozzle 161, and can rotate the developer supply nozzle 161 about the vertical axis.
第3臂體153係藉由圖5所示之作為移動機構的噴嘴驅動部163,而可在軌道150上移動自如。藉此,顯影液供給噴嘴161可以由設於杯體142之Y方向負方向側的外側之待機部164,移動至杯體142內之晶圓W的中心部上方。待機部164設於待機部157之Y方向負方向側。此外,第3臂體153藉由噴嘴驅動部163而可昇降自如,可以調節顯影液供給噴嘴161之高度。 The third arm body 153 is movable on the rail 150 by the nozzle driving unit 163 as a moving mechanism shown in FIG. 5. Thereby, the developer supply nozzle 161 can be moved above the center portion of the wafer W in the cup 142 from the standby portion 164 provided on the outer side in the negative direction of the Y direction of the cup 142. The standby portion 164 is provided on the negative side in the Y direction of the standby portion 157. In addition, the third arm body 153 can be raised and lowered freely by the nozzle driving section 163, and the height of the developer supply nozzle 161 can be adjusted.
作為其他液處理裝置之下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33之結構,除了噴嘴之形狀、數量、由噴嘴所供給之液體不同以外,皆與上述顯影處理裝置30之結構相同,因此省略說明。 The structures of the lower anti-reflection film forming device 31, the photoresist coating device 32, and the upper anti-reflection film forming device 33 of other liquid processing devices are the same as those described above except that the shape and number of the nozzles and the liquid supplied from the nozzles are different. The structure of the development processing device 30 is the same, so the description is omitted.
於以上之基板處理系統1,設有圖1所示之控制部200。控制部200係例如電腦,具有程式儲存部(未圖示)。於程式儲存部,儲存有控制在基板處理系統1之晶圓W處理的程式。再者,於程式儲存部亦儲存有用以控制上述各種處理裝置及搬送裝置等之驅動系統的動作,以實現基板處理系統1之後述剝離處理的程式。此外,前述程式,係儲存在例如電腦可讀取之硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等電腦可讀取之記錄媒體者,亦可以係由該記錄媒體而安裝至控制部200者。 The above-mentioned substrate processing system 1 is provided with a control unit 200 shown in FIG. 1. The control unit 200 is, for example, a computer, and includes a program storage unit (not shown). In the program storage section, a program for controlling the processing of the wafer W in the substrate processing system 1 is stored. Furthermore, a program for controlling the operations of the drive systems of the various processing apparatuses and conveying apparatuses described above is also stored in the program storage section, so as to implement the peeling process described later on the substrate processing system 1. In addition, the aforementioned programs are stored in a computer-readable recording medium such as a computer-readable hard disk (HD), floppy disk (FD), optical disk (CD), magneto-optical disk (MO), and memory card. The recording medium may be mounted on the control unit 200.
接著,針對使用如上構成之基板處理系統1所進行之晶圓處理,加以說明。圖7係顯示該晶圓處理的主要步驟例之流程圖。此外,圖8係顯示以顯影處理裝置30進行之顯影處理步驟中之晶圓W旋轉速度與各機器的動作之時序圖。 Next, wafer processing performed using the substrate processing system 1 configured as described above will be described. FIG. 7 is a flowchart showing an example of main steps of the wafer processing. In addition, FIG. 8 is a timing chart showing the rotation speed of the wafer W and the operation of each machine in the development processing step performed by the development processing device 30.
首先,容納有複數晶圓W之卡匣C,係搬入基板處理系統1之卡匣站10,並藉由晶圓搬送裝置23而將卡匣C內之各晶圓W依序搬送至處理站11的移交裝置53。 First, the cassette C containing a plurality of wafers W is transferred into the cassette station 10 of the substrate processing system 1, and each wafer W in the cassette C is sequentially transferred to the processing station by the wafer transfer device 23. 11 的 交给 装置 53。 11 of the handover device 53.
接著晶圓W係藉由晶圓搬送裝置70而搬送至第2區塊G2的熱處理裝置40,進行溫度調節處理。之後,晶圓W就藉由晶圓搬送裝置70,而搬送至例如第1區塊G1之下部反射防止膜形成裝置31,在晶圓W上形成下部反射防止膜(圖7之步驟S1)。之後晶圓W就搬送至第2區塊G2的熱處理裝置41,進行加熱處理。 Next, the wafer W is transferred to the heat treatment device 40 of the second block G2 by the wafer transfer device 70 and subjected to temperature adjustment processing. Thereafter, the wafer W is transferred to, for example, the lower reflection preventing film forming device 31 in the first block G1 by the wafer transfer device 70 to form a lower reflection preventing film on the wafer W (step S1 in FIG. 7). Thereafter, the wafer W is transferred to the heat treatment apparatus 41 in the second block G2 and is subjected to heat treatment.
之後晶圓W藉由晶圓搬送裝置70而搬送至第2區塊G2的熱處理裝置42,進行溫度調節處理。之後,晶圓W就藉由晶圓搬送裝置70而搬送至例如第1區塊G1之 光阻塗佈裝置32,在晶圓W上形成光阻膜(圖7之步驟S2)。之後將晶圓W搬送至熱處理裝置43,進行預烤處理。 Thereafter, the wafer W is transferred to the heat treatment device 42 of the second block G2 by the wafer transfer device 70 and subjected to temperature adjustment processing. Thereafter, the wafer W is transferred to, for example, the first block G1 by the wafer transfer device 70. The photoresist coating device 32 forms a photoresist film on the wafer W (step S2 in FIG. 7). Thereafter, the wafer W is transferred to the heat treatment apparatus 43 and subjected to a pre-baking process.
接著將晶圓W搬送至第1區塊G1的上部反射防止膜形成裝置33,而在晶圓W上形成上部反射防止膜(圖7之步驟S3)。之後,將晶圓W搬送至第2區塊G2之熱處理裝置43,進行加熱處理。之後,晶圓W就藉由晶圓搬送裝置70而搬送至第3區塊G3之移交裝置56。 Next, the wafer W is transferred to the upper anti-reflection film forming device 33 in the first block G1, and an upper anti-reflection film is formed on the wafer W (step S3 in FIG. 7). After that, the wafer W is transferred to the heat treatment device 43 in the second block G2 and is subjected to a heat treatment. Thereafter, the wafer W is transferred to the transfer device 56 in the third block G3 by the wafer transfer device 70.
接著晶圓W就藉由晶圓搬送裝置100而搬送至移交裝置52,再藉由往返搬送裝置80而搬送至第4區塊G4之移交裝置62。之後,晶圓W就藉由界面站13的晶圓搬送裝置110而搬送至曝光裝置12,並以既定圖案進行曝光處理(圖7之步驟S4)。 Then, the wafer W is transferred to the transfer device 52 by the wafer transfer device 100, and then transferred to the transfer device 62 in the fourth block G4 by the round-trip transfer device 80. Thereafter, the wafer W is transferred to the exposure device 12 by the wafer transfer device 110 of the interface station 13 and is subjected to exposure processing in a predetermined pattern (step S4 in FIG. 7).
接著晶圓W就藉由晶圓搬送裝置70而搬送至熱處理裝置40,進行曝光後烘烤處理。藉此,藉由在光阻膜之曝光部所產生之酸而進行去保護反應(Deprotection)。之後晶圓W就藉由晶圓搬送裝置70而搬送至顯影處理裝置30,進行顯影處理(圖7之步驟S5)。 The wafer W is then transferred to the heat treatment device 40 by the wafer transfer device 70 and subjected to a post-exposure bake process. Thereby, a deprotection is performed by an acid generated in the exposed portion of the photoresist film. After that, the wafer W is transferred to the development processing device 30 by the wafer transfer device 70 and development processing is performed (step S5 in FIG. 7).
於顯影處理,如圖9所示,首先藉由純水供給噴嘴154,而對形成有光阻膜R之晶圓W的中心部供給既定量的純水P(圖8之時間t0~t1)。此時,會在晶圓W靜止之狀態下供給純水P。藉此會在晶圓W的中心部形成純水P的液灘(圖7之步驟T1)。又,於步驟T1未必需要使晶圓W靜止,只要係可以在晶圓W之中心部形成純水P液灘之程度的低速旋轉,則亦可以在使晶圓W旋轉之狀態下供給純水P。 In the development process, as shown in FIG. 9, firstly, a predetermined amount of pure water P is supplied to the center of the wafer W on which the photoresist film R is formed through the pure water supply nozzle 154 (time t 0 to t in FIG. 8). 1 ). At this time, pure water P is supplied while the wafer W is stationary. As a result, a liquid beach of pure water P is formed at the center of the wafer W (step T1 in FIG. 7). In addition, the wafer W does not necessarily need to be stationary at step T1. As long as it can rotate at a low speed such that a pure water P liquid beach can be formed at the center of the wafer W, pure water can be supplied while the wafer W is rotated. P.
接著,於停止供給純水P之同時,如圖10所示,使稀釋用顯影液供給噴嘴158移動至晶圓W之中心部上方,而對純水P的液灘上供給既定量之稀釋用顯影液Q(圖8之時間t1)。藉此,藉由晶圓W上的純水P而稀釋顯影液Q,在晶圓W上形成稀釋顯影液M的液灘(液灘形成步驟。圖7之步驟T2)。此時,因為光阻膜R與稀釋顯影液M接觸,而使光阻膜R稍事進行顯影,產生溶解生成物U。此溶解生成物U會隨著稀釋顯影液M之流動,而滯留在液灘之外周方向。又,純水P之供給量與顯影液Q之供給量間的比率,換言之,稀釋顯影液M之濃度,係設定成例如TMAH之濃度大致低於2.38%。 Next, while stopping the supply of pure water P, as shown in FIG. 10, the developing developer supply nozzle 158 for dilution is moved above the center of the wafer W, and a predetermined amount of dilution is supplied to the liquid beach of pure water P. Developer Q (time t 1 in FIG. 8). Thereby, the developing solution Q is diluted with the pure water P on the wafer W, and a liquid beach for diluting the developing solution M is formed on the wafer W (the liquid beach forming step. Step T2 in FIG. 7). At this time, because the photoresist film R is in contact with the diluted developing solution M, the photoresist film R is developed a little, and a dissolved product U is generated. The dissolved product U stays in the outer peripheral direction of the liquid beach with the flow of the diluted developer M. In addition, the ratio between the supply amount of pure water P and the supply amount of the developer Q, in other words, the concentration of the diluted developer M is set to, for example, the concentration of TMAH to be substantially lower than 2.38%.
接著,一邊持續由稀釋用顯影液供給噴嘴158供給顯影液,一邊藉由旋轉夾頭140而使基板加速至第1旋轉速度(圖8之時間t1~t2)。藉此,如圖11所示,稀釋顯影液M會由晶圓W之中心朝向外周方向擴散。其結果,會在晶圓W整面形成稀釋顯影液M之液膜(液膜形成步驟。圖7之步驟T3)。又,就第1旋轉速度而言,只要是稀釋顯影液M會朝向晶圓W之外周擴散,而排出至晶圓W外部的速度即可,例如較佳係1500prm~2000rpm;而於本實施形態是1500rpm。再者,使晶圓W加速時的加速度,係例如3000rpm/秒。 Next, while the developer is continuously supplied from the developing developer supply nozzle 158 for dilution, the substrate is accelerated to the first rotation speed by rotating the chuck 140 (time t 1 to t 2 in FIG. 8). Thereby, as shown in FIG. 11, the diluted developer M will diffuse from the center of the wafer W toward the outer peripheral direction. As a result, a liquid film of the diluted developer M is formed on the entire surface of the wafer W (the liquid film forming step. Step T3 in FIG. 7). The first rotation speed may be a speed at which the diluted developer M diffuses toward the outer periphery of the wafer W and is discharged to the outside of the wafer W. For example, the speed is preferably 1500 prm to 2000 rpm. In this embodiment, It is 1500rpm. The acceleration when the wafer W is accelerated is, for example, 3000 rpm / sec.
一旦在晶圓W上形成稀釋顯影液M之液膜,則光阻膜R之顯影會在晶圓W整面些微地進行,而產生溶解生成物U;然而藉由以較為高速之第1旋轉速度以使稀釋顯影液M擴散,溶解生成物U會與稀釋顯影液M一併由晶圓W之外周部排出。又,於圖8中,在將晶圓W加速至第1旋轉速度的過程,係於例如達到400rpm以後,一度將旋轉速度減速至200rpm;而藉由進行此種減速,則除了離心力以外,還有朝向晶圓W圓周方向之慣性力作用在晶圓W上的稀釋顯影液M,而使稀 釋顯影液M可以更加均勻地擴散。又,使晶圓W加速至第1旋轉速度時,未必要進行圖8所示之減速。 Once the liquid film of the diluted developer M is formed on the wafer W, the development of the photoresist film R will be performed slightly on the entire surface of the wafer W to generate a dissolved product U; however, by first rotating at a relatively high speed The speed is such that the diluted developing solution M is diffused, and the dissolved product U is discharged from the outer periphery of the wafer W together with the diluted developing solution M. In FIG. 8, the process of accelerating the wafer W to the first rotation speed is, for example, once the rotation speed is reduced to 200 rpm after reaching 400 rpm. By performing such deceleration, in addition to the centrifugal force, The dilution developing solution M acting on the wafer W is caused by an inertial force in the circumferential direction of the wafer W to make the dilution The release developer M can be more uniformly diffused. When the wafer W is accelerated to the first rotation speed, it is not necessary to perform the deceleration shown in FIG. 8.
當晶圓W之旋轉速度達到第1旋轉速度後,則以第1旋轉速度維持例如0.5秒之旋轉,之後使晶圓W之旋轉速度減速,停止晶圓W。此時,使晶圓W減速時的加速度也是3000rpm/秒(圖8之時間t2~t3)。再者,於時間t2~t3的期間,亦持續由稀釋用顯影液供給噴嘴158供給顯影液。 When the rotation speed of the wafer W reaches the first rotation speed, the rotation is maintained at the first rotation speed, for example, 0.5 seconds, and then the rotation speed of the wafer W is decelerated to stop the wafer W. At this time, the acceleration when decelerating the wafer W is also 3000 rpm / second (time t 2 to t 3 in FIG. 8). In addition, during the period from time t 2 to time t 3 , the developer is continuously supplied from the dilution developer supply nozzle 158.
接著,於停止晶圓W之同時,停止由稀釋用顯影液供給噴嘴158供給顯影液Q,並使稀釋用顯影液供給噴嘴158從晶圓W上退開,並且如圖12所示,使顯影液供給噴嘴161移動至晶圓W中心部之上方。此時,於顯影液供給噴嘴161之下端面161a與晶圓W之頂面之間形成既定間隔的空隙,此空隙之距離大約係0.5mm~2mm。 Next, while stopping the wafer W, the supply of the developing solution Q from the developing solution supply nozzle 158 for dilution is stopped, and the developing solution supply nozzle 158 for dilution is retracted from the wafer W, and as shown in FIG. The liquid supply nozzle 161 moves above the center portion of the wafer W. At this time, a predetermined gap is formed between the lower end surface 161a of the developer supply nozzle 161 and the top surface of the wafer W, and the distance of this gap is about 0.5 mm to 2 mm.
接著,由顯影液供給噴嘴161供給顯影液Q,如圖13所示,在顯影液供給噴嘴161之下端面161a與晶圓W之間形成顯影液Q的液灘(顯影液的液灘形成步驟。圖7之步驟T4)。與此同時,一邊藉由旋轉驅動機構162以旋轉顯影液供給噴嘴161,一邊如圖14所示,開始由由晶圓W之中心部移動至晶圓W之外周部。此時顯影液供給噴嘴161,會移動而通過晶圓W之中心。又,此時之顯影液供給噴嘴161的旋轉速度,較佳係50rpm~200rpm,而於本實施形態是130rpm。顯影液供給噴嘴161朝向晶圓W外周部移動之速度,較佳係10mm/s~100mm/s,而於本實施形態是15mm/s。再者,顯影液供給噴嘴161之旋轉方向,係設定成與晶圓W之旋轉方向相反之方向。藉此,會在晶圓W上攪拌顯影液Q,而可以在面內進行更為均勻的顯影處理。 Next, the developing solution Q is supplied from the developing solution supplying nozzle 161. As shown in FIG. 13, a liquid beach of the developing solution Q is formed between the lower end surface 161a of the developing solution supplying nozzle 161 and the wafer W (the step of forming the liquid beach of the developing solution (Step T4 of FIG. 7). At the same time, while the developer is supplied to the nozzle 161 by the rotation driving mechanism 162 to rotate the developer, the movement from the center portion of the wafer W to the outer periphery of the wafer W is started as shown in FIG. 14. At this time, the developer supply nozzle 161 moves and passes through the center of the wafer W. The rotation speed of the developer supply nozzle 161 at this time is preferably 50 rpm to 200 rpm, and in this embodiment is 130 rpm. The speed at which the developer supply nozzle 161 moves toward the outer peripheral portion of the wafer W is preferably 10 mm / s to 100 mm / s, and is 15 mm / s in this embodiment. The rotation direction of the developer supply nozzle 161 is set in a direction opposite to the rotation direction of the wafer W. Thereby, the developing solution Q is stirred on the wafer W, and a more uniform developing process can be performed in the plane.
此外,由顯影液供給噴嘴161開始供給顯影液Q之同時,就使晶圓W加速至比第1旋轉速度慢的第2旋轉速度(圖8之時間t3~t4)。就第2旋轉速度而言,較佳係例如15prm~30rpm左右,於本實施形態是30rpm。此外,使晶圓W加速時的加速度,係例如3000rpm/秒。藉此,如圖15所示,顯影液Q漸漸地由晶圓W之中心部供給至外周方向。 In addition, at the same time that the developer Q is supplied from the developer supply nozzle 161, the wafer W is accelerated to a second rotation speed that is slower than the first rotation speed (times t 3 to t 4 in FIG. 8). The second rotation speed is preferably about 15 prm to 30 rpm, and is 30 rpm in this embodiment. The acceleration when the wafer W is accelerated is, for example, 3000 rpm / sec. Thereby, as shown in FIG. 15, the developing solution Q is gradually supplied from the center portion of the wafer W to the outer peripheral direction.
當顯影液供給噴嘴161靠近晶圓W之外周部附近時,接著就將晶圓W之旋轉速度由第2旋轉速度更進一步地減速,使其為例如15rpm(圖8之時間t5)。此時之加速度,係例如100rpm/秒。如此這般,藉由待顯影液供給噴嘴161到達晶圓W之外周部附近後降低晶圓W之旋轉速度,而可以藉由離心力防止顯影液Q濺灑至晶圓W外部。然後,使晶圓W之旋轉速度維持在15rpm,而使顯影液供給噴嘴161移動至晶圓W之外周端部,並對晶圓W之整面供給顯影液(顯影液供給步驟。圖7之步驟T5)。此時,由於已藉由步驟T3在晶圓W上形成了稀釋顯影液之液膜,而使溶解生成物U從晶圓W上排出,所以即使對晶圓W上供給顯影液Q,溶解生成物U之產生量亦可壓在極少的量。其結果,晶圓W上之光阻膜R的顯影處理,可以在不受溶解生成物U之影響的情況下進行。 When the developer supply nozzle 161 approaches the outer periphery of the wafer W, the rotation speed of the wafer W is further reduced from the second rotation speed to 15 rpm (for example, time t 5 in FIG. 8). The acceleration at this time is, for example, 100 rpm / second. In this way, by reducing the rotation speed of the wafer W after the developer supply nozzle 161 reaches the vicinity of the outer periphery of the wafer W, the developer Q can be prevented from being spilled to the outside of the wafer W by the centrifugal force. Then, the rotation speed of the wafer W is maintained at 15 rpm, the developer supply nozzle 161 is moved to the outer peripheral end portion of the wafer W, and the developer is supplied to the entire surface of the wafer W (developer supply step. Step T5). At this time, since a liquid film for diluting the developing solution has been formed on the wafer W in step T3, and the dissolved product U is discharged from the wafer W, even if the developing solution Q is supplied to the wafer W, the dissolution is generated. The amount of the substance U produced can also be suppressed to a very small amount. As a result, the development process of the photoresist film R on the wafer W can be performed without being affected by the dissolution product U.
之後,待顯影液供給噴嘴161到達晶圓W之外周端部,就停止由顯影液供給噴嘴161供給顯影液Q,並停止顯影液供給噴嘴161之旋轉(圖8之時間t6),再使顯影液供給噴嘴161由晶圓W上退開。於停止顯影液Q之供給後,為了使晶圓W上之顯影液Q均勻,亦可使晶圓W之旋轉再持續一段時間。 After the developer supply nozzle 161 reaches the outer peripheral end of the wafer W, the supply of the developer solution Q from the developer supply nozzle 161 is stopped, and the rotation of the developer supply nozzle 161 is stopped (time t 6 in FIG. 8), and then The developer supply nozzle 161 is retracted from the wafer W. After stopping the supply of the developing solution Q, in order to make the developing solution Q on the wafer W uniform, the rotation of the wafer W may be continued for a period of time.
之後,一旦完成顯影處理,就使晶圓W之旋轉速度減速,使晶圓W停止。接著,例如由純水供給噴嘴154對晶圓W上供給純水,進行晶圓W之沖洗處理(圖7之步驟T6)。藉此,將已溶解之光阻與顯影液Q一併洗去,即完成一連串之顯影處理。 After that, once the development process is completed, the rotation speed of the wafer W is decelerated to stop the wafer W. Next, for example, pure water is supplied to the wafer W from the pure water supply nozzle 154, and the wafer W is rinsed (step T6 in FIG. 7). Thereby, the dissolved photoresist and the developing solution Q are washed away together to complete a series of developing processes.
於完成顯影處理後,晶圓W就藉由晶圓搬送裝置70而搬送至熱處理裝置42,進行後烘烤處理(圖7之步驟S6)。接著,以熱處理裝置43對晶圓W進行溫度調整。之後,晶圓W會經由晶圓搬送裝置70、晶圓搬送裝置23而搬送至既定之卡匣載置板21的卡匣C,完成一連串之光學微影步驟。 After the development processing is completed, the wafer W is transferred to the heat treatment device 42 by the wafer transfer device 70 to perform a post-baking process (step S6 in FIG. 7). Next, the temperature of the wafer W is adjusted by the heat treatment apparatus 43. Thereafter, the wafer W is transferred to the cassette C of the predetermined cassette mounting plate 21 via the wafer transfer device 70 and the wafer transfer device 23 to complete a series of optical lithography steps.
根據上述實施形態,係首先在晶圓W之中心部形成稀釋顯影液M的液灘,接著使晶圓W加速至第1旋轉速度以使稀釋顯影液M的液灘擴散至晶圓W整面,而在晶圓W表面形成稀釋顯影液M之液面(步驟T3)。此時,雖然會因為稀釋顯影液M而在晶圓W上產生溶解生成物U,但藉由使晶圓W加速至第1旋轉速度,而會使溶解生成物U與稀釋顯影液M一併從晶圓W上排出。然後,在具有與晶圓W成例如平行之下端面161a(潤濕面)的顯影液供給噴嘴161、與晶圓W之間,形成顯影液Q之液膜,一邊持續由顯影液供給噴嘴161供給顯影液、一邊使晶圓W旋轉,同時使顯影液供給噴嘴161由晶圓W之中心部移動至晶圓W之外周部,而對晶圓W整面塗佈顯影液Q。此時,由於已於步驟T3藉由稀釋顯影液M而去除了溶解生成物U,因此光阻膜R之顯影處理可以在不受溶解生成物U之影響的情況下進行。其結果,如圖16所示,即使在使顯影時間較習知技術縮短的情況下,也可以在面內均勻地進行顯影處理。圖16係以顏色之濃淡,依每次拍攝分別列出使用本實施形態之顯影處理方法進行30秒之顯影處理的情況下之晶圓W面內光阻圖案的線寬不均勻程度。由圖16可知,線寬之不均勻已抑制至與顯影時間 為60秒之前述圖27大致同等程度。因此若藉由本發明,則可以一方面確保顯影處理之面內均勻性,一方面提升顯影處理之產率。 According to the above embodiment, a liquid beach for diluting the developing solution M is first formed in the center of the wafer W, and then the wafer W is accelerated to the first rotation speed to diffuse the liquid beach for the diluting developing solution M to the entire surface of the wafer W. A liquid level of the diluted developer M is formed on the surface of the wafer W (step T3). At this time, although the dissolved product U is generated on the wafer W by diluting the developing solution M, the dissolved product U and the diluted developing solution M are combined together by accelerating the wafer W to the first rotation speed. It is discharged from the wafer W. Then, a developing solution supply nozzle 161 is formed between the developing solution supply nozzle 161 having a lower end surface 161a (wet surface) parallel to the wafer W and the wafer W, and the developing solution supply nozzle 161 is continuously supplied. While supplying the developer, while rotating the wafer W, the developer supply nozzle 161 is moved from the center of the wafer W to the outer periphery of the wafer W, and the developer Q is applied to the entire surface of the wafer W. At this time, since the dissolved product U has been removed by diluting the developing solution M in step T3, the development process of the photoresist film R can be performed without being affected by the dissolved product U. As a result, as shown in FIG. 16, even when the development time is shortened as compared with the conventional technique, the development process can be performed uniformly in the plane. FIG. 16 shows the unevenness of the line width of the photoresist pattern in the wafer W surface in the case of using the developing processing method of this embodiment to perform the developing processing for 30 seconds in accordance with the density of the color. It can be seen from FIG. 16 that the variation in line width has been suppressed to the development time. The aforementioned FIG. 27, which is 60 seconds, is approximately the same. Therefore, according to the present invention, the in-plane uniformity of the development process can be ensured on the one hand, and the yield of the development process can be improved on the other hand.
此外,由於係使顯影液供給噴嘴161一邊以與晶圓W之旋轉方向相反的方向自轉,一邊朝向晶圓W之外周部移動,因此可以在晶圓W上攪拌顯影液Q,以在面內進行更均勻的顯影處理。又,未必需要進行顯影液供給噴嘴161之自轉,根據本案發明人團隊表示,已確認即使在不進行自轉的情況下,亦能實現所要的顯影精度。 In addition, since the developer supply nozzle 161 is rotated toward the outer periphery of the wafer W while rotating in a direction opposite to the rotation direction of the wafer W, the developer solution Q can be stirred on the wafer W to be in-plane. A more uniform development process is performed. In addition, the rotation of the developer supply nozzle 161 does not necessarily need to be performed. According to the team of the inventors of the present invention, it has been confirmed that the required development accuracy can be achieved even without the rotation.
再者,近年所採用之液浸曝光用的光阻,與顯影液之接觸角度大,而不易在光阻膜上均勻地塗佈顯影液;然而藉由如本實施形態般,首先藉著高速旋轉使稀釋顯影液M的液灘擴散在晶圓W上之整面,以進行晶圓W之預濕(prewet)處理,藉此亦可期待降低光阻膜R與顯影液Q間之接觸角度(提升顯影液對光阻膜之濕潤性(wettability))的效果。其結果,可以對晶圓W之內均勻地供給顯影液,而可以進一步地提升晶圓面內之顯影處理的均勻性。此外,藉由使光阻膜R與顯影液Q間的接觸角度縮小,而可以減少顯影液Q之供給量。又,根據本案發明人團隊表示,為使例如300mm之晶圓W顯影,習知需要80cc左右的顯影液Q;但藉由使用本實施形態之顯影方法,已確認可以降低到43cc左右。 Furthermore, the photoresist used for liquid immersion exposure in recent years has a large contact angle with the developing solution, and it is difficult to uniformly coat the developing solution on the photoresist film; however, as in this embodiment, first, by high speed Rotate the liquid beach of the diluted developer M over the entire surface of the wafer W to perform a prewet treatment on the wafer W, thereby reducing the contact angle between the photoresist film R and the developer Q. (Improving the effect of the developer on the wettability of the photoresist film). As a result, the developer can be uniformly supplied into the wafer W, and the uniformity of the development process in the wafer surface can be further improved. In addition, by reducing the contact angle between the photoresist film R and the developing solution Q, the supply amount of the developing solution Q can be reduced. In addition, according to the inventor's team of this case, in order to develop a wafer W of 300 mm, for example, a developing solution Q of about 80 cc is conventionally required; however, it has been confirmed that it can be reduced to about 43 cc by using the developing method of this embodiment.
此外,對晶圓W進行預濕處理時,由於係使用以純水稀釋過的稀釋顯影液M,因此不會發生只在稀釋顯影液M所滴落之位置──在本實施形態係晶圓W之中心部──進行顯影的情形。因此,基於此點,同樣也使得在晶圓W面內可以均勻地進行顯影處理。 In addition, when pre-wetting the wafer W, since the diluted developer M diluted with pure water is used, it does not occur only at the position where the diluted developer M drops. In this embodiment, the wafer W The center of W-development. Therefore, based on this, the development process can also be performed uniformly in the wafer W plane.
又,在上述實施形態,於步驟T2形成稀釋顯影液M的液灘時,係對純水P的液灘上供給稀釋用顯影液Q,但稀釋顯影液M的液灘之形成方法並不限定於本實施形態之內容。例如亦可對稀釋用顯影液供給噴嘴158供給已預先以純水稀釋過的稀釋顯影液M,例如圖17所示,對光阻膜R上直接供給稀釋顯影液M,以形成該稀釋顯影液M的液灘。由於藉此可以省略形成純水P的液灘之步驟T1,因此可以更進一步地提升顯影處理之產率。在此情況下,稀釋用顯影液供給噴嘴158亦可發揮作為稀釋顯影液供給噴嘴之功能。 In the above embodiment, when the liquid beach for diluting the developing solution M is formed in step T2, the developing solution Q for dilution is supplied to the liquid beach of pure water P, but the method for forming the liquid beach for diluting the developing solution M is not limited. The content of this embodiment. For example, the diluted developer supply nozzle 158 may be supplied with the diluted developer solution M which has been diluted with pure water in advance. For example, as shown in FIG. 17, the diluted developer solution M may be directly supplied to the photoresist film R to form the diluted developer solution. M's liquid beach. Since the step T1 of forming a liquid beach of pure water P can be omitted by this, the yield of the development process can be further improved. In this case, the dilution developer supply nozzle 158 may also function as a dilution developer supply nozzle.
再者,在上述實施形態,於步驟T3形成稀釋顯影液M之液膜時,係由稀釋用顯影液供給噴嘴158供給顯影液Q,但亦可藉由顯影液供給噴嘴161供給形成稀釋顯影液M之液膜時的顯影液Q。在此情況下,例如圖18所示,係使顯影液供給噴嘴161與純水P的液灘接觸,在此狀態下供給稀釋用顯影液Q。藉此稀釋純水P與顯影液Q,而藉由在步驟T3使晶圓W以第1旋轉速度旋轉,而在晶圓W上形成稀釋顯影液M之液膜。 Further, in the above embodiment, when the liquid film of the diluted developer M is formed in step T3, the developer Q is supplied from the developer supply nozzle 158 for dilution, but the developer solution may be supplied from the developer supply nozzle 161 to form the diluted developer solution. Developer Q for liquid film of M. In this case, for example, as shown in FIG. 18, the developer supply nozzle 161 is brought into contact with the liquid beach of pure water P, and the developer solution Q for dilution is supplied in this state. Thereby, the pure water P and the developing solution Q are diluted, and the wafer W is rotated at the first rotation speed in step T3 to form a liquid film of the diluted developing solution M on the wafer W.
此外,藉由顯影液供給噴嘴161形成稀釋顯影液M之液膜時,亦可先設為可由顯影液供給噴嘴161供給稀釋顯影液M,而如圖19所示,直接在晶圓W與顯影液供給噴嘴161之間形成稀釋顯影液M的液灘。在此情況下,亦可藉由在步驟T3使晶圓W以第1旋轉速度旋轉,而在晶圓W上形成稀釋顯影液M之液膜。 In addition, when the liquid film of the diluted developer M is formed by the developer supply nozzle 161, it can also be assumed that the diluted developer M can be supplied by the developer supply nozzle 161, as shown in FIG. 19, directly on the wafer W and the developer. A liquid beach for diluting the developing solution M is formed between the liquid supply nozzles 161. In this case, by rotating the wafer W at the first rotation speed in step T3, a liquid film of the diluted developer M can be formed on the wafer W.
又,在由顯影液供給噴嘴161供給顯影液Q及稀釋顯影液M之雙方的情況下,如圖20所示,顯影液供給噴嘴161會連接供給顯影液Q的顯影液管250以及稀釋顯影液管251。又,在顯影液供給噴嘴161不設置旋轉驅動機構162的情況下,如圖21所示,亦可使顯影液管250與稀釋顯影液管251在顯影液供給噴嘴161內部 合流。在此情況下,如圖20、圖21所示之顯影液供給噴嘴161,亦會發揮稀釋顯影液供給噴嘴的功能。換言之,顯影液供給噴嘴161與稀釋顯影液供給噴嘴共用供給孔161b。 When both the developing solution Q and the diluted developing solution M are supplied from the developing solution supplying nozzle 161, as shown in FIG. 20, the developing solution supplying nozzle 161 is connected to the developing solution pipe 250 for supplying the developing solution Q and the diluted developing solution. Tube 251. When the developing solution supply nozzle 161 is not provided with the rotation driving mechanism 162, as shown in FIG. 21, the developing solution pipe 250 and the diluted developing solution pipe 251 may be placed inside the developing solution supply nozzle 161. confluence. In this case, the developer supply nozzle 161 shown in FIGS. 20 and 21 also functions as a dilution developer supply nozzle. In other words, the developer supply nozzle 161 shares the supply hole 161b with the diluted developer supply nozzle.
此外,在上述實施形態,係僅在顯影液供給噴嘴161之中心部形成供給孔161b,但例如圖22所示,亦可在顯影液供給噴嘴161之下端面161a形成複數之供給孔161b。藉由形成複數之供給孔161b,而可以對下端面161a均勻地供給顯影液Q或稀釋顯影液M。 In the above embodiment, the supply hole 161b is formed only in the center of the developer supply nozzle 161. For example, as shown in FIG. 22, a plurality of supply holes 161b may be formed in the lower end surface 161a of the developer supply nozzle 161. By forming a plurality of supply holes 161b, the developer Q or the diluted developer M can be uniformly supplied to the lower end surface 161a.
再者,在上述實施形態,純水供給噴嘴154、稀釋用顯影液供給噴嘴158、顯影液供給噴嘴161係分別由不同之臂體151、152、153所支持,但亦可使純水供給噴嘴154、稀釋用顯影液供給噴嘴158、顯影液供給噴嘴161以任一臂體所支持。在此情況下,例如圖23所示,亦可連通設置對顯影液供給噴嘴161供給純水P的純水管252。 Furthermore, in the above-mentioned embodiment, the pure water supply nozzle 154, the dilution developer supply nozzle 158, and the developer supply nozzle 161 are supported by different arm bodies 151, 152, and 153, respectively. However, the pure water supply nozzle may be used. 154. The dilution developer supply nozzle 158 and the developer supply nozzle 161 are supported by either arm. In this case, for example, as shown in FIG. 23, a pure water pipe 252 for supplying pure water P to the developer supply nozzle 161 may be provided in communication.
又,在上述實施形態,於步驟T4,係自移位至晶圓W中心部之顯影液供給噴嘴161供給顯影液Q,而在晶圓W之中心部形成液灘後,一邊供給顯影液Q、一邊使顯影液供給噴嘴161由晶圓W之中心部移動至外周端部,藉此以對晶圓W整面供給顯影液Q,然而對晶圓W整面供給顯影液Q之方法並不限定於本實施形態的內容。例如亦可於步驟T4,如圖24所示,藉由顯影液供給噴嘴161而在晶圓W之外周端部形成顯影液Q的液灘,之後藉由一邊供給顯影液Q、一邊使顯影液供給噴嘴161移動至晶圓W之中心部,以對晶圓W整面供給顯影液Q。在此情況下,也同樣可以藉由在步驟T3使溶解生成物U與稀釋顯影液M一併由晶圓W上排出,而使光阻膜R之顯影處理可以在不受溶解生成物U之影響的情況下進行。 Further, in the above embodiment, at step T4, the developing solution Q is supplied from the developing solution supply nozzle 161 shifted to the center portion of the wafer W, and the developing solution Q is supplied after a liquid beach is formed at the center portion of the wafer W. 1. While moving the developer supply nozzle 161 from the center portion of the wafer W to the outer peripheral end portion, thereby supplying the developer solution Q to the entire surface of the wafer W, the method of supplying the developer solution Q to the entire surface of the wafer W is not It is limited to the content of this embodiment. For example, in step T4, as shown in FIG. 24, a liquid beach of the developer Q is formed on the outer peripheral end of the wafer W by the developer supply nozzle 161, and then the developer is supplied while the developer solution Q is supplied. The supply nozzle 161 moves to the center of the wafer W to supply the developer Q to the entire surface of the wafer W. In this case, it is also possible to discharge the dissolved product U and the diluted developing solution M from the wafer W in step T3, so that the development process of the photoresist film R can be performed without being affected by the dissolved product U Carried out without impact.
又,根據本案發明人團隊表示,已確認到於步驟T4,如圖24所示,藉由使顯影液供給噴嘴161由晶圓W之外周端部朝向中心部移動,而可以進一步提升顯影處理之面內均勻性。推斷此係基於以下原因:亦即,由於在步驟T3,對晶圓W之中心部供給稀釋顯影液M,因此晶圓W之中心部與外周部兩相比較,各自接觸稀釋顯影液M之時間,會產生些微差距。然後,由於藉由此稀釋顯影液M,仍會有些微之顯影進行,所以相較於晶圓W之中心部,可觀察到在晶圓W之外周部的線寬,會有稍微較寬的傾向。另一方面,如圖24所示,在晶圓W外周端部形成顯影液Q的液灘後,藉由使顯影液供給噴嘴161朝向晶圓W之中心部移動,而可使在步驟T3所產生之與稀釋顯影液M之接觸時間的差距,相對緩和。推測係因此而使顯影處理之面內均勻性得以進一步提升。 In addition, according to the inventor team of the present case, it has been confirmed that at step T4, as shown in FIG. 24, by moving the developer supply nozzle 161 from the outer peripheral end portion of the wafer W toward the center portion, the development processing can be further improved In-plane uniformity. It is inferred that this is based on the following reasons: That is, since the diluted developing solution M is supplied to the center portion of the wafer W in step T3, the central portion of the wafer W and the outer peripheral portion are respectively compared with the time during which the diluted developing solution M is contacted. There will be a slight gap. Then, since the developing solution M is diluted by this, a slight development is still performed, so compared to the center portion of the wafer W, the line width at the outer periphery of the wafer W can be observed to be slightly wider. tendency. On the other hand, as shown in FIG. 24, after the liquid beach of the developing solution Q is formed at the outer peripheral end portion of the wafer W, the developing solution supply nozzle 161 is moved toward the center portion of the wafer W, so that it can be changed in step T3. The difference between the contact time with the diluted developer M produced is relatively mild. It is speculated that the in-plane uniformity of the development process can be further improved.
以上,參照隨附圖式說明了本發明之較佳實施形態,但本發明並不限於該例。所屬技術領域中具有通常知識者了解,可以在申請專利範圍所記載之思想的範疇內思及各種變更例或修正例,而該等亦當屬本發明之技術範圍內。本發明並不限於此例,可採各種態樣。即使基板係晶圓以外之FPD(平板顯示器)、光罩用的倍縮光罩等其他基板的情況下,亦可適用本發明。 As mentioned above, although the preferred embodiment of this invention was described referring an accompanying drawing, this invention is not limited to this example. Those with ordinary knowledge in the technical field understand that they can think about various changes or amendments within the scope of the ideas described in the scope of patent application, and these should also be within the technical scope of the present invention. The present invention is not limited to this example, and various aspects can be adopted. The present invention is applicable even when the substrate is another substrate such as an FPD (Flat Panel Display) other than a wafer, and a reduction mask for a photomask.
[產業上之可利用性] [Industrial availability]
本發明對於基板上之光阻膜所進行之顯影處理,具有可利用性。 The invention is applicable to the development processing performed on the photoresist film on the substrate.
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KR20180083917A (en) * | 2015-11-19 | 2018-07-23 | 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. | COMPOSITION FOR FORMING MINERAL RESIST PATTERN AND METHOD FOR FORMING PATTERN USING THE SAME |
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