KR20010058399A - Injection device for developing agents - Google Patents

Injection device for developing agents Download PDF

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Publication number
KR20010058399A
KR20010058399A KR1019990062672A KR19990062672A KR20010058399A KR 20010058399 A KR20010058399 A KR 20010058399A KR 1019990062672 A KR1019990062672 A KR 1019990062672A KR 19990062672 A KR19990062672 A KR 19990062672A KR 20010058399 A KR20010058399 A KR 20010058399A
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KR
South Korea
Prior art keywords
nozzle
developer
wafer
developing solution
injection device
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KR1019990062672A
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Korean (ko)
Inventor
김진옥
Original Assignee
박종섭
주식회사 하이닉스반도체
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Application filed by 박종섭, 주식회사 하이닉스반도체 filed Critical 박종섭
Priority to KR1019990062672A priority Critical patent/KR20010058399A/en
Publication of KR20010058399A publication Critical patent/KR20010058399A/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/3021Imagewise removal using liquid means from a wafer supported on a rotating chuck

Abstract

PURPOSE: An apparatus for spraying developer is provided to shorten an interval of time for spraying developer, to reduce the quantity of the sprayed developer and to decrease the time for development, by rotating a nozzle for spraying developer in a direction opposite to that of a wafer. CONSTITUTION: Developer(D) flowing through a nozzle pipe installed inside a nozzle(12) is sprayed on the surface of a wafer(W) by a developer spraying apparatus. The developer spraying apparatus includes a nozzle rotation unit in which the nozzle sprays developer while rotating.

Description

현상액 분사장치{INJECTION DEVICE FOR DEVELOPING AGENTS}Developer injection device {INJECTION DEVICE FOR DEVELOPING AGENTS}

본 발명은 현상액 분사장치에 관한 것으로서, 보다 상세하게는 본 발명은 현상액을 분사하는 노즐을 자전시키며 웨이퍼의 상면에 분사하는 노즐자전수단이 설치됨으로써, 현상액의 분사시간을 단축하고, 분사되는 현상액의 사용량을 절감하며, 현상액의 침투효과가 증가되어 현상시간을 단축하는 한편, 제조품질을 향상시킬 수 있는 현상액 분사장치에 관한 것이다.The present invention relates to a developer injector, and more particularly, the present invention provides a nozzle rotating means for rotating a nozzle for injecting a developer and spraying on an upper surface of the wafer, thereby shortening the injection time of the developer, and The present invention relates to a developer spraying apparatus which can reduce the amount of use and increase the penetration time of the developer to shorten the developing time and improve the manufacturing quality.

도 1은 일반적인 현상액 분사장치의 단면도로서, 회전척(1)에 고정되어 회전되는 웨이퍼(W)의 상면에 현상액(D)을 분사하는 노즐(2)과, 상기 노즐(2)에 현상액(D)을 공급하는 공급관(3)과, 상기 공급관(3)을 이동시키고 실린더(4)로 구성된다.1 is a cross-sectional view of a general developer injector, the nozzle 2 for injecting the developer D onto the upper surface of the wafer W which is fixed and rotated on the rotary chuck 1, and the developer D to the nozzle 2. It is composed of a supply pipe (3) for supplying a) and the cylinder (4) to move the supply pipe (3).

도 2는 상기 노즐의 확대단면도로서, 도시된 바와 같이, 상기 노즐(2)의 내측에서 상기 공급관(3)에서 공급된 현상액(D)이 유동되는 노즐관(2a)과, 상기 노즐관(2a)의 선단에 형성되어 현상액(D)을 웨이퍼(W) 상면으로 분사하는 분사구(2b)가 포함되어 구성된다.2 is an enlarged cross-sectional view of the nozzle, as shown in the drawing, a nozzle tube 2a through which the developer D supplied from the supply pipe 3 flows inside the nozzle 2, and the nozzle tube 2a. The injection hole 2b which is formed in the front-end | tip of the () and injects the developing solution D to the upper surface of the wafer W is comprised.

상기와 같이 구성된 종래 현상액 분사장치의 작용을 설명하면 다음과 같다.Referring to the operation of the conventional developer solution injector configured as described above are as follows.

도 1에서, 상기 웨이퍼(W)가 회전척(1)에 고정되어 회전되면 상기 공급관(3)은 상기 실린더(4)의 구동에 의하여 이동되고 상기 노즐(2)은 웨이퍼(W)의 상부로 이동된다.In FIG. 1, when the wafer W is fixed and rotated on the rotary chuck 1, the supply pipe 3 is moved by the driving of the cylinder 4, and the nozzle 2 moves to the top of the wafer W. Is moved.

그리고, 상기 공급관(3)을 경유한 현상액(D)은 상기 노즐(2)의 노즐관(2a)을 유동한 후, 선단에 형성된 분사구(2b)에서 도시된 바와 같이 웨이퍼(W)의 상면으로 분사된다. 상기 분사가 완료되면 상기 노즐(2)과 공급관(3)은 실린더(4)의 구동에 의하여 원래의 위치로 복귀된다.Then, the developing solution D via the supply pipe 3 flows through the nozzle pipe 2a of the nozzle 2 and then moves to the upper surface of the wafer W as shown in the injection hole 2b formed at the tip. Sprayed. When the injection is completed, the nozzle 2 and the supply pipe 3 are returned to their original position by driving the cylinder 4.

그러나, 도 1에 도시된 바와 같이 상기 웨이퍼(W)는 일방향으로만 회전되고 상기 웨이퍼(W)의 상부에 위치되는 노즐(2)은 고정되어 있는 바, 현상액(D)을 일측의 방향으로만 분사하므로 현상액(D)이 웨이퍼(W)의 상면에 형성된 패턴에 불일정하게 침투되었으며, 상기 웨이퍼(W)의 상면에 현상액(D)을 골고루 분사하는 데 장시간이 소요되는 한편, 상기 현상액(D)이 불필요하게 다량으로 소모되었다.However, as shown in FIG. 1, the wafer W is rotated in only one direction, and the nozzle 2 positioned above the wafer W is fixed, so that the developing solution D is only in one direction. As a result of the injection, the developing solution D has been irregularly infiltrated into the pattern formed on the upper surface of the wafer W, and it takes a long time to spray the developing solution D evenly on the upper surface of the wafer W, while the developing solution D ) Was unnecessarily consumed in large quantities.

그리고, 상기 웨이퍼(W)의 상면에 형성된 패턴에 현상액(D)이 초기에 분사된 시각과 최종적으로 분사된 시각의 차이가 크므로 동일한 패턴상에서도 부분적으로 현상속도가 상이하였으며, 상기 웨이퍼(W)의 상면에 분사된 현상액(D)의 도포두께가 불균일하므로 현상된 이후의 선폭이 불일정하여 임계치(Critical Dimension)를 초과하는 등 품질이 불안정한 문제점이 있었다.In addition, since the difference between the time at which the developer D was initially sprayed and the time at which the developer was finally sprayed on the pattern formed on the upper surface of the wafer W is large, the developing speed is partially different on the same pattern. Since the coating thickness of the developer (D) sprayed on the upper surface is uneven, there is a problem that the quality is unstable such that the line width after development is uneven and exceeds the critical dimension.

본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위하여 안출된 것으로써, 본 발명의 목적은 현상액을 분사하는 노즐을 회전하는 웨이퍼의 상면에서 반대방향으로 회전시킴으로서, 현상액의 분사시간을 단축하고, 분사되는 현상액의 사용량을 절감하며, 침투효과를 증가하여 현상시간을 단축하는 한편, 제조품질을 향상시킬 수 있는 현상액 분사장치를 제공하는 데 있다.The present invention has been made to solve the problems of the prior art as described above, the object of the present invention is to rotate the nozzle for injecting the developer in the opposite direction on the upper surface of the rotating wafer, thereby reducing the injection time of the developer, It is to provide a developer injection device that can reduce the amount of developer to be injected, increase the penetration effect to shorten the development time, and improve the manufacturing quality.

도 1은 종래 현상액 분사장치의 단면도.1 is a cross-sectional view of a conventional developer injection device.

도 2는 종래 현상액 분사장치애서 노즐의 확대단면도.Figure 2 is an enlarged cross-sectional view of a nozzle in a conventional developer injection device.

도 3는 본 발명에 따른 현상액 분사장치의 사시도.3 is a perspective view of a developer injector according to the present invention.

도 4a는 본 발명에 따른 현상액 분사장치에서 노즐자전수단의 부분절결 정면도.Figure 4a is a partially cutaway front view of the nozzle rotating means in the developer injector according to the present invention.

도 4b는 도 4a의 A-A'선 단면도.4B is a cross-sectional view taken along the line AA ′ of FIG. 4A.

< 도면의 주요부분에 대한 부호의 설명 ><Description of Symbols for Major Parts of Drawings>

11 : 회전척 12 : 노즐11: rotating chuck 12: nozzle

13 : 공급관 14 : 실린더13: supply pipe 14: cylinder

20 : 노즐자전수단 21 : 노즐관20: nozzle rotating means 21: nozzle tube

22 : 지지판 23 : 베어링22: support plate 23: bearing

상기 목적을 달성하기 위하여, 본 발명에 의한 현상액 분사장치는 노즐 내측에 형성된 노즐관을 흐르는 현상액을 웨이퍼의 상면에 분사하는 현상액 분사장치에 있어서, 상기 노즐이 자전되며 현상액을 분사하는 노즐자전수단이 포함된 것을 특징으로 한다.In order to achieve the above object, the developer injector according to the present invention is a developer injector for injecting the developer flowing through the nozzle tube formed inside the nozzle on the upper surface of the wafer, the nozzle is rotated and the nozzle rotating means for injecting the developer Characterized in that included.

상기 노즐자전수단은 상기 노즐관이 다수개 분지되어 소정각도로 회전되며 외측으로 연통된다.The nozzle rotating means is a plurality of the nozzle tube is branched and rotated by a predetermined angle and communicate with the outside.

바람직하게는 상기 노즐을 지지하는 지지판과, 상기 노즐과 지지판의 사이에 설치되는 베어링이 포함되어 구성된다.Preferably, a supporting plate for supporting the nozzle and a bearing provided between the nozzle and the supporting plate are included.

이하, 본 발명의 바람직한 실시례를 첨부도면에 의거하여 설명한다.Best Mode for Carrying Out the Invention Preferred embodiments of the present invention will now be described based on the accompanying drawings.

도 3는 본 발명에 따른 현상액 분사장치의 사시도로서, 회전척(11)에 고정되어 회전되는 웨이퍼(W)의 상면에 현상액(D)을 분사하는 노즐(12)과, 상기 노즐(12)에 현상액(D)을 공급하는 공급관(13)과, 상기 공급관(13)을 이동시키고 실린더(14)와, 상기 노즐(2)이 자전되며 현상액(D)을 분사하는 노즐자전수단(20)이 형성된다.3 is a perspective view of a developer injector according to the present invention, including a nozzle 12 for injecting a developer D onto an upper surface of a wafer W that is fixed and rotated to a rotary chuck 11, and to the nozzle 12. A supply pipe 13 for supplying a developing solution D, a nozzle 14 for moving the supply pipe 13, the cylinder 14, and the nozzle 2 are rotated and spraying the developing solution D are formed. do.

도 4a는 상기 노즐자전수단의 부분절결 정면도이고, 도 4b는 A-A' 선 단면도로서, 도시된 바와 같이, 상기 노즐자전수단(20)은 상기 노즐관(21)이 다수개 분지되어 소정각도(θ)로 회전되며 외측으로 연통되도록 형성된다.4A is a partially cutaway front view of the nozzle rotating means, and FIG. 4B is a cross-sectional view taken along the line AA ′. As shown, the nozzle rotating means 20 has a plurality of nozzle tubes 21 branched at a predetermined angle θ. It is rotated in) and is formed to communicate with the outside.

그리고 상기 노즐(12)을 상측에서 지지하는 지지판(22)과, 상기 노즐(12)과 지지판(22)의 사이에는 레이디얼 방향으로 상기 노즐(12)을 지지하는 베어링(23)이 형성된다.A support plate 22 supporting the nozzle 12 from above and a bearing 23 supporting the nozzle 12 in the radial direction are formed between the nozzle 12 and the support plate 22.

상기와 같이 본 발명에 따른 현상액 분사장치의 작용을 설명하면 다음과 같다.Referring to the operation of the developer injector according to the present invention as described above are as follows.

도 3에서, 상기 웨이퍼(W)가 회전척(11)에 고정되어 시계방향으로 회전되면 상기 공급관(13)은 상기 실린더(14)의 구동에 의하여 이동되고, 상기 지지판(22)과 베어링(23)으로 지지된 상기 노즐(12)은 웨이퍼(W)의 상부로 이동된다.In FIG. 3, when the wafer W is fixed to the rotary chuck 11 and rotated clockwise, the supply pipe 13 is moved by driving of the cylinder 14, and the support plate 22 and the bearing 23 are rotated. The nozzle 12 supported by) is moved to the top of the wafer (W).

그리고, 상기 노즐관(21)은 도 4a 및 도 4b에 도시된 바와 같이, 노즐(12) 내부에서 다수개로 분지되면서 특정한 각도(θ)로 회전각을 가지면서 중심부에서 외측으로 형성되어 있으므로 상기 공급관(13)을 경유한 현상액(D)은 상기 노즐관(21)을 따라서 회전되면서 외측으로 분사된다.4A and 4B, since the nozzle tube 21 is branched into a plurality of nozzles 12 and has a rotation angle at a specific angle θ, the nozzle tube 21 is formed outward from the center thereof. The developing solution D via (13) is ejected outward while being rotated along the nozzle tube 21.

상기와 같이 회전되는 노즐관(21)을 따라서 현상액(D)이 유동되므로 상기 현상액(D)은 상기 노즐(12)의 외주방향으로 원심력을 작용하므로 상기 노즐(12)은 상기 노즐관(21)의 회전방향과 동일한 방향으로 회전되므로 상기 웨이퍼(W)의 회전방향과 반대로 회전되어 종래보다 현상액(D)이 웨이퍼(W)의 상면에 형성된 패턴에 일정하게 침투될 수 있다.Since the developing solution D flows along the rotating nozzle tube 21 as described above, the developing solution D exerts a centrifugal force in the circumferential direction of the nozzle 12, so that the nozzle 12 has the nozzle tube 21. Since it is rotated in the same direction as the rotational direction of the wafer W, the rotational direction is opposite to the rotational direction of the developing solution D so as to penetrate the pattern formed on the upper surface of the wafer W more conventionally.

또한, 상기 노즐관(21)은 다수개 분지되어 있으므로 도시된 바와 같이 상기 웨이퍼(W)의 상면에 다중으로 분사되므로 분사시간이 단축되고, 종래보다 골고루 분사되어 현상액(D)의 불필요한 손실을 방지하며, 동일한 패턴내에서 현상속도의 차이를 감소시키고 현상액(D)의 도포두께를 일정하게 유지시킬 수 있다.In addition, since the plurality of nozzle tubes 21 are branched, the spraying time is shortened since the spraying is multiplied on the upper surface of the wafer W as shown, and the spraying time is uniformly sprayed to prevent unnecessary loss of the developing solution D. In addition, within the same pattern, the difference in the development speed can be reduced and the coating thickness of the developer (D) can be kept constant.

이상에서 설명한 바와 같이, 본 발명에 의한 현상액 분사장치는 현상액을 분사하는 노즐이 자전되며 웨이퍼의 상면으로 분사하는 노즐자전수단을 설치함으로써, 상기 웨이퍼와 노즐을 반대로 회전시키고 다중으로 분사시켜 현상액의 분사시간을 단축하고, 현상액의 손실을 감소하며, 현상액의 침투효과를 증대시켜 현상시간을 단축시키고 제조품질을 향상시키는 효과가 있다.As described above, the developer injector according to the present invention rotates the nozzle for injecting the developer and installs the nozzle rotating means for injecting onto the upper surface of the wafer. It has the effect of shortening the time, reducing the loss of the developing solution, increasing the penetration effect of the developing solution to shorten the developing time and improve the manufacturing quality.

Claims (3)

노즐 내측에 형성된 노즐관을 흐르는 현상액을 웨이퍼의 상면에 분사하는 현상액 분사장치에 있어서,In the developer injection device for injecting the developer flowing through the nozzle tube formed inside the nozzle on the upper surface of the wafer, 상기 노즐이 자전되며 현상액을 분사하는 노즐자전수단이 포함된 것을 특징으로 하는 현상액 분사장치.And a nozzle rotating means for rotating the nozzle and injecting a developing solution. 제 1항에 있어서, 상기 노즐자전수단은 상기 노즐관이 다수개 분지되어 소정각도로 회전되며 외측으로 연통된 것을 특징으로 하는 현상액 분사장치.The developing solution injection device according to claim 1, wherein the nozzle rotating means has a plurality of nozzle tubes branched to rotate at a predetermined angle and communicate with the outside. 제 1항 또는 제 2항에 있어서, 상기 노즐을 지지하는 지지판과, 상기 노즐과 지지판의 사이에 설치되는 베어링이 포함되어 구성된 것을 특징으로 하는 현상액 분사장치.The developing solution injection device according to claim 1 or 2, wherein a supporting plate for supporting the nozzle and a bearing provided between the nozzle and the supporting plate are included.
KR1019990062672A 1999-12-27 1999-12-27 Injection device for developing agents KR20010058399A (en)

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KR100894888B1 (en) * 2002-12-16 2009-04-30 에이에스엠엘 홀딩 엔.브이. Apparatus and methods for dispensing fluids with rotatable dispense arms
US20160154311A1 (en) * 2014-12-01 2016-06-02 Tokyo Electron Limited Developing method, computer-readable storage medium and developing apparatus
CN105652610A (en) * 2014-12-01 2016-06-08 东京毅力科创株式会社 Developing processing method and developing processing apparatus
CN110687758A (en) * 2019-10-23 2020-01-14 长江存储科技有限责任公司 Wafer developing device and developing method thereof

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JPS62229837A (en) * 1986-03-29 1987-10-08 Toshiba Corp Method and device for devloping resist
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JPS62229837A (en) * 1986-03-29 1987-10-08 Toshiba Corp Method and device for devloping resist
JPH05275323A (en) * 1992-03-03 1993-10-22 Nec Corp Developer of semiconductor substrate
KR970063415A (en) * 1996-02-24 1997-09-12 김광호 Wafer development method
KR980003881A (en) * 1996-06-26 1998-03-30 김광호 The nozzle portion of the photoresist film developing apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100894888B1 (en) * 2002-12-16 2009-04-30 에이에스엠엘 홀딩 엔.브이. Apparatus and methods for dispensing fluids with rotatable dispense arms
US20160154311A1 (en) * 2014-12-01 2016-06-02 Tokyo Electron Limited Developing method, computer-readable storage medium and developing apparatus
CN105652610A (en) * 2014-12-01 2016-06-08 东京毅力科创株式会社 Developing processing method and developing processing apparatus
TWI657318B (en) * 2014-12-01 2019-04-21 日商東京威力科創股份有限公司 Developing method
US10459340B2 (en) * 2014-12-01 2019-10-29 Tokyo Electron Limited Developing method, computer-readable storage medium and developing apparatus
US10921713B2 (en) 2014-12-01 2021-02-16 Tokyo Electron Limited Developing method, computer-readable storage medium and developing apparatus
CN110687758A (en) * 2019-10-23 2020-01-14 长江存储科技有限责任公司 Wafer developing device and developing method thereof
CN110687758B (en) * 2019-10-23 2024-01-02 长江存储科技有限责任公司 Wafer developing device and developing method thereof

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