TWI770046B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TWI770046B
TWI770046B TW106127060A TW106127060A TWI770046B TW I770046 B TWI770046 B TW I770046B TW 106127060 A TW106127060 A TW 106127060A TW 106127060 A TW106127060 A TW 106127060A TW I770046 B TWI770046 B TW I770046B
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substrate
cup
outer peripheral
peripheral side
liquid
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TW106127060A
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TW201820404A (en
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西畑広
福田昌弘
田中公一朗
甲斐亜希子
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日商東京威力科創股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/3092Recovery of material; Waste processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

Abstract

[課題] 即便為在對可旋轉地被支撐之基板供給第1或第2處理液而處理基板的基板處理方法中,包含有使基板低速旋轉之工程的情況,亦按種類回收來自基板的處理液。   [解決手段] 在顯像處理裝置中,係在正型顯像處理之際,使分配部(152a)上升,並將來自晶圓(W)的正型顯像液從分配部(152a)與固定罩杯(154)之間引導至正型用回收口,在負型顯像處理之際,使分配部(152a)下降,並將來自晶圓(W)的負型顯像液從分配部(152a)與外周壁(153a)之間引導至負型用回收口。在分配部(152a)下降時,該分配部(152a)之內周側端下降的階差(154d)被形成於固定罩杯(154b)的外周端,使得在負型顯像處理之際,負型顯像液不會被引導至正型用回收口,並且,分配部(152a)之上面的角度α被形成為比形成階差(154d)的上部之傾斜面的角度β大。[Problem] Even in a substrate processing method for processing a substrate by supplying a first or a second processing liquid to a rotatably supported substrate, even if the process of rotating the substrate at a low speed is included, the processing from the substrate is recovered by type liquid. [Solution] In the development processing apparatus, at the time of the positive development process, the distribution part (152a) is raised, and the positive development solution from the wafer (W) is transferred from the distribution part (152a) to the distribution part (152a). The space between the fixed cups (154) is guided to the recovery port for positive type, and the dispensing part (152a) is lowered during the negative-type development process, and the negative-type developing solution from the wafer (W) is discharged from the dispensing part (152a). 152a) and the outer peripheral wall (153a) are guided to the recovery port for negative type. When the distribution part (152a) descends, a step (154d) in which the inner peripheral side end of the distribution part (152a) descends is formed at the outer peripheral end of the fixed cup (154b), so that at the time of the negative development process, the negative The type developing solution is not guided to the positive type recovery port, and the angle α of the upper surface of the distribution part (152a) is formed to be larger than the angle β of the inclined surface of the upper part forming the step (154d).

Description

基板處理裝置及基板處理方法Substrate processing apparatus and substrate processing method

[0001] 本發明,係關於對可旋轉地被支撐之基板供給顯像液等的處理液,而處理該基板之基板處理裝置及基板處理方法。[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate that is rotatably supported by supplying a processing liquid such as a developer to the substrate.

[0002] 在例如半導體元件之製造程序的光微影工程中,係例如依序進行如下述處理等,在晶圓上形成預定的光阻圖案:光阻塗佈處理,將光阻液塗佈於作為基板的半導體晶圓(以下,稱為「晶圓」。)上而形成光阻膜;曝光處理,將預定圖案曝光於該光阻膜;加熱處理(後曝光烘烤(post exposure baking)),在曝光後,促進光阻膜內的化學反應;顯像處理,以顯像液來將已曝光的光阻膜進行顯像。   [0003] 作為光阻液,係存在有:正型光阻液,在顯像處理時,去除曝光部;及負型光阻液,在顯像處理時,去除未曝光部。又,作為顯像液,係存有在各別與正型光阻液及負型光阻液對應的正型顯像液及負型顯像液。   [0004] 在專利文獻1中,係揭示有一種以同一模組進行正型顯像液所致之顯像處理與負型顯像液所致之顯像處理的顯像處理裝置。該顯像處理裝置,係如圖15及圖16所示,具備有:回收罩杯501,回收伴隨著晶圓W之旋轉而飛散的顯像液。回收罩杯501,係具有:罩杯本體502;及可動罩杯503,可對該罩杯本體502亦即晶圓W上下方向地移動。在專利文獻1的顯像處理裝置中,係如圖15所示,在正型顯像處理之際,使可動罩杯503上升,藉此,使從旋轉之晶圓W飛散的正型顯像液穿過可動罩杯503之下側,並導入罩杯本體502的內側流路504。又,如圖16所示,在負型顯像處理之際,使可動罩杯503下降,藉此,使從旋轉之晶圓W飛散的負型顯像液穿過可動罩杯503之上側,並導入罩杯本體502的外側流路505。藉此,不使正型顯像液的排液與負型顯像液的排液混合而各別進行回收。作為各別進行回收的目的,係可列舉出再利用。   [0005] 又,作為顯像處理的方式,係提議一種顯像方法,其具備有:將曝光後之基板水平地保持於基板保持部的工程;從顯像液噴嘴將顯像液供給至基板之一部分而形成積液的工程;使基板旋轉的工程;以使旋轉的基板中之顯像液的供給位置沿著該基板之徑方向移動的方式,使顯像液噴嘴移動,從而使積液在基板之整面擴展的工程;及與使積液在基板之整面擴展的工程並行,並且與顯像液噴嘴一起移動,使接觸部接觸於積液的工程,該接觸部,係與基板相對向的面小於基板的表面(專利文獻2)。在該顯像方法中,係在使顯像液的積液於基板之整面擴展的工程中,基板之旋轉速度,係成為100rpm以下。 [先前技術文獻] [專利文獻]   [0006]   [專利文獻1] 日本特開2014-75575號公報   [專利文獻2] 日本特開2015-53467號公報In a photolithography process such as a manufacturing process of a semiconductor device, for example, the following processes are sequentially performed to form a predetermined photoresist pattern on a wafer: a photoresist coating process, a photoresist solution is applied A photoresist film is formed on a semiconductor wafer (hereinafter, referred to as a "wafer") as a substrate; an exposure treatment is performed to expose a predetermined pattern to the photoresist film; a heat treatment (post exposure baking) ), after exposure, the chemical reaction in the photoresist film is promoted; in the development process, the exposed photoresist film is developed with a developing solution. [0003] As the photoresist liquid, there are: a positive type photoresist liquid, which removes the exposed part during the development process; and a negative type photoresist liquid, which removes the unexposed part during the development process. In addition, as the developer, there are positive developer and negative developer corresponding to the positive photoresist and the negative photoresist, respectively. [0004] In Patent Document 1, there is disclosed a development processing device that performs development processing by a positive type developer solution and development processing by a negative type developer solution with the same module. As shown in FIG. 15 and FIG. 16 , this developing processing apparatus includes a recovery cup 501 for recovering the developing solution scattered along with the rotation of the wafer W. As shown in FIG. The recovered breast cup 501 includes: a breast cup body 502; In the development processing apparatus of Patent Document 1, as shown in FIG. 15 , at the time of the positive development process, the movable cup 503 is lifted up, whereby the positive development solution scattered from the rotating wafer W is released. It passes through the lower side of the movable breast cup 503 and is introduced into the inner flow channel 504 of the breast cup body 502 . Furthermore, as shown in FIG. 16 , at the time of the negative developing process, the movable cup 503 is lowered, whereby the negative developing solution scattered from the rotating wafer W passes through the upper side of the movable cup 503 and is introduced The outer flow channel 505 of the cup body 502. Thereby, the discharged liquid of the positive-type developing solution and the discharged liquid of the negative-type developing solution are recovered separately without being mixed. Recycling is exemplified as the purpose of each collection. In addition, as a mode of development processing, a development method is proposed, which includes: a process of holding the exposed substrate horizontally in a substrate holding part; and supplying a developer liquid from a developer liquid nozzle to the substrate Part of the process of forming liquid accumulation; the process of rotating the substrate; moving the developer liquid nozzle in such a way that the supply position of the developer liquid in the rotating substrate moves along the radial direction of the substrate, thereby causing the liquid to accumulate The process of spreading the liquid over the entire surface of the substrate; and the process of spreading the liquid accumulation over the entire surface of the substrate in parallel with the process of moving the developer nozzle together to bring the contact portion into contact with the liquid accumulation. The contact portion is connected to the substrate. The opposing surface is smaller than the surface of the substrate (Patent Document 2). In this developing method, in the process of spreading the accumulated liquid of the developing solution over the entire surface of the substrate, the rotational speed of the substrate is set to be 100 rpm or less. [PRIOR ART DOCUMENT] [PATENT DOCUMENT] [0006] [PATENT DOCUMENT 1] JP-A-2014-75575 [PATENT DOCUMENT 2] JP-A-2015-53467

[本發明所欲解決之課題]   [0007] 然而,在以同一模組進行正型顯像液所致之顯像處理與負型顯像液所致之顯像處理的情況下,吾人考慮採用揭示於專利文獻2之方式來作為顯像處理之方式的構成。但是,在該構成中,當採用揭示於專利文獻1之方法等的以往方法來作為各別回收正型顯像液之排液與負型顯像液之排液的方法時,存在有下述的問題。   [0008] 亦即,如上述般,在揭示於專利文獻2之顯像處理的方式中,係存在有如下述之工程:塗佈有顯像液之晶圓的旋轉速度緩慢至100rpm以下。在有該緩慢工程的情況下,如圖16般,存在有如下述之情形:即便使可動罩杯503下降,亦無法使負型顯像液導入外側流路505而導入正型顯像系統用之內側流路504,從而導致正型顯像液之排液與負型顯像液之排液被混合。   [0009] 作為上述的混合發生之機制,係考慮例如以下者。   吾人認為,如圖17所示,當晶圓W之旋轉速度較緩慢時,晶圓W上的負型顯像液D不會被甩掉而落下至罩杯本體502上,並從罩杯本體502與可動罩杯503之間被導入正型顯像系統用之內側流路504。   又,吾人認為,如圖18所示,當晶圓W之旋轉速度較緩慢時,負型顯像液D會迴繞至晶圓W的背面。於像這樣的狀態下,當甩掉負型顯像液D時,與一般情況相比,被甩掉之顯像液的軌道會變低。因此,所甩掉之顯像液碰撞到可動罩杯503之內周端或罩杯本體502的結果,從罩杯本體502與可動罩杯503之間被導入正型顯像系統用之內側流路504。   [0010] 吾人認為,即便為以2種類之處理液且同一模組來進行各別的基板處理,並各別回收各處理液的其他基板處理裝置,亦存在有同樣問題。   [0011] 本發明,係有鑑於該點而進行研究者,以下述者為其目的:在對可旋轉地被支撐之基板供給第1處理液或第2處理液而處理基板,並且根據種類回收來自基板的處理液之基板處理裝置中,即便為在基板處理包含有使基板低速旋轉之工程的情況,亦可按種類回收來自基板的處理液。 [用以解決課題之手段]   [0012] 為了達成前述之目的,本發明,提供一種基板處理裝置,係對可繞垂直軸旋轉地被支撐之基板供給第1處理液或第2處理液而處理前述基板,並且以回收罩杯回收來自前述基板的處理液,該基板處理裝置,其特徵係,前述回收罩杯,係具備有:罩杯本體,具有:環狀之外周壁,比前述基板大;環狀之內部構造體,由朝向外周側逐漸變低之第1傾斜面形成有上端的外周面;及底壁,前述第1處理液之回收口被設置於內周側,前述第2處理液之回收口被設置於外周側;及可動罩杯,在上端具有分配部,並且被設置為可在前述罩杯本體的前述外周壁與前述內部構造體之間上下移動,該分配部,係由朝向外周側逐漸變低之第2傾斜面形成有上面,以使該可動罩杯上升的方式,將前述第1處理液從前述分配部與前述內部構造體之間引導至前述第1處理液的回收口,並以使前述可動罩杯下降的方式,將前述第2處理液從前述分配部與前述外周壁之間引導至前述第2處理液的回收口,前述罩杯本體,係在前述第1傾斜面之外周側端具有階差,在前述可動罩杯下降時,前述分配部之內周側端下降至前述階差,前述分配部之上面變得比形成前述階差之上側的面低,前述分配部之前述第2傾斜面的角度,係比前述第1傾斜面的角度大。   [0013] 前述分配部之前述第2傾斜面,係外周側的傾斜角度比內周側大為較佳。   [0014] 前述分配部之內周側端,係被形成為朝向內周側逐漸變薄為較佳。   [0015] 前述罩杯本體,係具有下述者為較佳:凹處,被形成於比前述第1傾斜面的前述階差更內周側;及連通路徑,連通該凹處與排液路徑。   [0016] 在比前述第1傾斜面的前述階差更內周側具有彈性構件,該彈性構件,係具有與前述第1傾斜面連續的上面,並且朝向外周側延伸而覆蓋前述可動罩杯下降時之前述分配部之內周側端的上方為較佳。   [0017] 根據另一觀點之本發明,提供一種基板處理方法,係對可繞垂直軸旋轉地被支撐之基板供給第1處理液或第2處理液而處理前述基板,並且以回收罩杯回收來自前述基板的處理液,該基板處理方法,其特徵係,前述回收罩杯,係具備有:罩杯本體,具有:環狀之外周壁,比前述基板大;環狀之內部構造體,由朝向外周側逐漸變低之第1傾斜面形成有上端的外周面;及底壁,前述第1處理液之回收口被設置於內周側,前述第2處理液之回收口被設置於外周側;及可動罩杯,在上端具有分配部,並且被設置為可在前述罩杯本體的前述外周壁與前述內部構造體之間上下移動,該分配部,係由朝向外周側逐漸變低之第2傾斜面形成有上面,前述罩杯本體,係在前述第1傾斜面之外周側端具有階差,前述分配部之前述第2傾斜面的角度,係比前述第1傾斜面的角度大,該基板處理方法,係在以前述第1處理液處理前述基板之際,包含有:使前述可動罩杯上升,並使前述分配部之內周側端位於比前述基板上方的工程;將前述第1處理液供給至前述基板的工程;及使前述基板旋轉,將該基板上的前述第1處理液從前述分配部與前述內部構造體之間引導至前述第1處理液之回收口的工程,在以前述第2處理液處理前述基板之際,包含有:使前述可動罩杯下降,並使前述分配部之內周側端下降至前述階差,前述分配部之上面變得比形成前述階差之上側的面低的工程;將前述第2處理液供給至前述基板的工程;及使前述基板旋轉,將該基板上的前述第2處理液從前述分配部與前述外周壁之間引導至前述第2處理液之回收口的工程。 [發明之效果]   [0018] 根據本發明,在對可旋轉地被支撐之基板供給第1處理液或第2處理液而處理基板,並且根據種類回收來自基板的處理液之基板處理裝置中,即便為在基板處理包含有使基板低速旋轉之工程的情況,亦可按種類回收來自基板的處理液。[Problems to be Solved by the Present Invention] [0007] However, in the case of carrying out the development process caused by the positive type developing solution and the development process caused by the negative type developing solution with the same module, we consider adopting The method disclosed in Patent Document 2 is used as the configuration of the development processing method. However, in this configuration, when conventional methods such as the method disclosed in Patent Document 1 are used as a method for recovering the discharged liquid of the positive type developing solution and the discharged liquid of the negative type developing solution, there are the following problems: The problem. [0008] That is, as described above, in the development process disclosed in Patent Document 2, there is a process in which the rotation speed of the wafer coated with the developer is slowed down to 100 rpm or less. In the case of this slow process, as shown in FIG. 16 , there is a case where the negative developing solution cannot be introduced into the outer channel 505 and introduced into the positive developing system even if the movable cup 503 is lowered. The inner flow path 504, thereby causing the discharge of the positive-tone developer and the discharge of the negative-tone developer to be mixed. [0009] As a mechanism for the above-mentioned mixing to occur, for example, the following are considered. We believe that, as shown in FIG. 17, when the rotation speed of the wafer W is relatively slow, the negative developer D on the wafer W will not be thrown off and fall on the cup body 502, and will be separated from the cup body 502 and the cup body 502. The space between the movable cups 503 is introduced into the inner flow path 504 for the positive imaging system. In addition, we believe that, as shown in FIG. 18, when the rotation speed of the wafer W is slow, the negative developer D will rewind to the backside of the wafer W. In such a state, when the negative developer liquid D is thrown off, the trajectory of the developer liquid to be thrown off becomes lower than the normal case. Therefore, the thrown developer liquid collides with the inner peripheral end of the movable breast cup 503 or the breast cup body 502, and is guided from between the breast cup body 502 and the movable breast cup 503 into the inner channel 504 for the positive imaging system. [0010] We believe that other substrate processing apparatuses that use two types of processing liquids and the same module to perform separate substrate processing and recover each processing liquid separately have the same problem. The present invention has been researched in view of this point, and has the following objects as its object: to supply a first processing liquid or a second processing liquid to a rotatably supported substrate to process the substrate, and to recover the substrate according to the type. In the substrate processing apparatus for the processing liquid from the substrate, even when the substrate processing includes a process of rotating the substrate at a low speed, the processing liquid from the substrate can be recovered by type. [MEANS TO SOLVE THE PROBLEM] [0012] In order to achieve the aforementioned object, the present invention provides a substrate processing apparatus that supplies a first processing liquid or a second processing liquid to a substrate supported so as to be rotatable around a vertical axis for processing The substrate, and the processing liquid from the substrate is recovered by the recovery cup, the substrate processing apparatus is characterized in that, the recovery cup is provided with: a cup body having: an annular outer peripheral wall, which is larger than the substrate; The inner structure body has an outer peripheral surface with an upper end formed by a first inclined surface that gradually decreases toward the outer peripheral side; The mouth is provided on the outer peripheral side; and the movable breast cup has a distribution portion at the upper end, and is provided to move up and down between the outer peripheral wall of the cup body and the inner structure, the distribution portion is gradually moved toward the outer peripheral side. The lower second inclined surface is formed with an upper surface, and guides the first treatment liquid from between the distribution part and the internal structure to the recovery port of the first treatment liquid so as to raise the movable cup. In the method of lowering the movable cup, the second treatment liquid is guided from between the distribution part and the outer peripheral wall to the recovery port of the second treatment liquid, and the cup body is tied to the outer peripheral end of the first inclined surface. There is a level difference, when the movable breast cup is lowered, the inner peripheral side end of the distribution part is lowered to the level difference, the upper surface of the distribution part becomes lower than the surface forming the upper side of the level difference, the second part of the distribution part is The angle of the inclined surface is larger than the angle of the aforementioned first inclined surface. [0013] The second inclined surface of the distribution portion preferably has a larger inclination angle on the outer peripheral side than the inner peripheral side. [0014] It is preferable that the inner peripheral side end of the distribution portion is formed to gradually become thinner toward the inner peripheral side. [0015] The breast cup body preferably has the following: a recess, which is formed on the inner peripheral side than the step of the first inclined surface; and a communication path, which communicates the recess and the drainage path. [0016] An elastic member is provided on the inner peripheral side than the step of the first inclined surface, the elastic member has an upper surface continuous with the first inclined surface, and extends toward the outer peripheral side to cover the time when the movable breast cup is lowered The upper part of the inner peripheral side end of the aforementioned distribution part is preferably. According to another aspect of the present invention, there is provided a method for treating a substrate, wherein the substrate is treated by supplying a first treatment liquid or a second treatment liquid to a substrate rotatably supported around a vertical axis, and recovers the substrate with a recovery cup. The substrate processing solution, and the substrate processing method, characterized in that the recovering breast cup is provided with: a breast cup body having: an annular outer peripheral wall larger than the substrate; The first inclined surface that gradually becomes lower is formed with the outer peripheral surface of the upper end; and the bottom wall, the recovery port of the first processing liquid is provided on the inner peripheral side, and the recovery port of the second processing liquid is provided on the outer peripheral side; and a movable The cup has a distribution portion at the upper end and is provided to move up and down between the outer peripheral wall of the cup body and the inner structure, and the distribution portion is formed by a second inclined surface that gradually decreases toward the outer peripheral side. Above, the cup body has a level difference at the outer peripheral side end of the first inclined surface, the angle of the second inclined surface of the distribution portion is larger than the angle of the first inclined surface, and the substrate processing method is When the substrate is treated with the first treatment liquid, the steps include: raising the movable cup so that the inner peripheral end of the distribution part is positioned above the substrate; and supplying the first treatment liquid to the substrate and the process of rotating the substrate to guide the first treatment liquid on the substrate from between the distribution part and the internal structure to the recovery port of the first treatment liquid, using the second treatment liquid When the substrate is processed, a process of lowering the movable cup, lowering the inner peripheral side end of the distribution part to the level difference, and making the upper surface of the distribution part lower than the surface forming the upper side of the level difference ; the process of supplying the second treatment liquid to the substrate; and rotating the substrate to guide the second treatment liquid on the substrate from between the distribution part and the outer peripheral wall to the recovery port of the second treatment liquid engineering. [Effects of the Invention] [0018] According to the present invention, in a substrate processing apparatus that processes the substrate by supplying the first processing liquid or the second processing liquid to a rotatably supported substrate, and recovers the processing liquid from the substrate according to the type, Even in the case where the substrate processing includes a process of rotating the substrate at a low speed, the processing liquid from the substrate can be recovered by type.

[0020] 以下,說明關於本發明之實施形態。另外,在本說明書及圖面中,對於實質上具有同一機能構成的要素,係賦予同一符號而省略重複說明。   [0021] 圖1,係示意地表示具備了本實施形態之顯像處理裝置之基板處理系統1之構成之概略的平面說明圖。圖2及圖3,係各別示意地表示基板處理系統1之內部構成之概略之各別的正視圖與後視圖。   [0022] 基板處理系統1,係如圖1所示,具有將下述者一體連接的構成:匣盒站10,將收容有複數片晶圓W的匣盒C搬入搬出;處理站11,具備有對晶圓W施予預定處理的複數個各種處理裝置;及介面站13,在與鄰接於處理站11的曝光裝置12之間,進行晶圓W之收授。   [0023] 在匣盒站10,係設置有匣盒載置台20。在匣盒載置台20,係設置有:複數個匣盒載置板21,在對基板處理系統1之外部搬入搬出匣盒C之際,載置匣盒C。   [0024] 在匣盒站10,係如圖1所示,設置有在沿X方向延伸之搬送路徑22上移動自如的晶圓搬送裝置23。晶圓搬送裝置23,係亦沿上下方向及繞垂直軸(θ方向)移動自如,並可在各匣盒載置板21上的匣盒C與後述之處理站11之第3區塊G3的收授裝置之間搬送晶圓W。   [0025] 在處理站11,係設置有具備了各種裝置之複數個例如4個區塊亦即第1區塊G1~第4區塊G4。例如,在處理站11的正面側(圖1之X方向負方向側),係設置有第1區塊G1,在處理站11的背面側(圖1之X方向正方向側、圖面之上側),係設置有第2區塊G2。又,在處理站11的匣盒站10側(圖1之Y方向負方向側),係設置有已述的第3區塊G3,在處理站11的介面站13側(圖1之Y方向正方向側),係設置有第4區塊G4。   [0026] 例如,在第1區塊G1,係如圖2所示,從下方依以下順序配置有複數個液處理裝置,例如:顯像處理裝置30,對晶圓W進行顯像處理;下部反射防止膜形成裝置31,在晶圓W之光阻膜的下層形成反射防止膜(以下稱為「下部反射防止膜」);光阻塗佈裝置32,將光阻液塗佈於晶圓W而形成光阻膜;及上部反射防止膜形成裝置33,在晶圓W之光阻膜的上層形成反射防止膜(以下稱為「上部反射防止膜」)。   [0027] 例如顯像處理裝置30、下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33,係各別沿水平方向排列配置3個。另外,該些顯像處理裝置30、下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33的數量或配置,係可任意選擇。   [0028] 在該些下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33中,係例如進行:旋轉塗佈,將預定塗佈液塗佈於晶圓W上。在旋轉塗佈中,係例如從塗佈噴嘴將塗佈液吐出於晶圓W上,並且使晶圓W旋轉而使塗佈液在晶圓W的表面擴散。另外,關於顯像處理裝置30之構成,係如後所述。   [0029] 例如,在第2區塊G2,係如圖3所示,設置有:複數個熱處理裝置40~43,進行晶圓W之加熱及冷卻這樣的熱處理。   [0030] 例如,在第3區塊G3,係如圖2、圖3所示,從下方依序設置有複數個收授裝置50、51、52、53、54、55、56。又,在第4區塊G4,係如圖3所示,從下方依序設置有複數個收授裝置60、61、62。   [0031] 如圖1所示,在第1區塊G1~第4區塊G4所包圍的區域,係形成有晶圓搬送區域D。在晶圓搬送區域D,係配置有:複數個晶圓搬送裝置70,具有沿例如Y方向、X方向、θ方向及上下方向移動自如的搬送臂。晶圓搬送裝置70,係在晶圓搬送區域D內進行移動,並可在與位於周圍之第1區塊G1、第2區塊G2、第3區塊G3及第4區塊G4內的預定裝置之間搬送晶圓W。   [0032] 又,在晶圓搬送區域D,係如圖3所示,設置有:穿梭搬送裝置80:在第3區塊G3與第4區塊G4之間,直線地搬送晶圓W。   [0033] 穿梭搬送裝置80,係例如沿圖3的Y方向直線地移動自如。穿梭搬送裝置80,係可於支撐了晶圓W的狀態下,沿Y方向移動,並在第3區塊G3的收授裝置52與第4區塊G4的收授裝置62之間搬送晶圓W。   [0034] 如圖1所示,在第3區塊G3的X方向正方向側旁,係設置有晶圓搬送裝置100。晶圓搬送裝置100,係具有沿例如X方向、θ方向及上下方向移動自如的搬送臂。晶圓搬送裝置100,係可於支撐了晶圓W的狀態下,上下地移動,並將晶圓W搬送至第3區塊G3內的各收授裝置。   [0035] 在介面站13,係設置有晶圓搬送裝置110與收授裝置111。晶圓搬送裝置110,係具有沿例如Y方向、θ方向及上下方向移動自如的搬送臂。晶圓搬送裝置110,係例如可將晶圓W支撐於搬送臂,並在第4區塊G4內的各收授裝置、收授裝置111及曝光裝置12之間搬送晶圓W。   [0036] 在以上的基板處理系統1,係如圖1所示,設置有控制部300。控制部300,係例如電腦,具有程式儲存部(未圖示)。在程式儲存部,係儲存有控制基板處理系統1中之晶圓W的處理之程式。又,在程式儲存部,係亦儲存有用以控制上述之各種處理裝置或搬送裝置等的驅動系統之動作,甚至亦控制後述的噴嘴驅動部166、169、172、175或升降部156等而實現基板處理系統1中之後述的顯像處理之程式。另外,前述程式,係亦可為被記錄於例如電腦可讀取之硬碟(HD)、軟碟片(FD)、光碟(CD)、磁光碟(MO)、記憶卡等之電腦可讀取的記憶媒體者,且從該記憶媒體安裝於控制部300者。   [0037] 其次,說明關於使用如上述般所構成之基板處理系統1而進行之晶圓處理的概略。首先,收納了複數個晶圓W的匣盒C被搬入至基板處理系統1的匣盒站10,藉由晶圓搬送裝置23,將匣盒C內之各晶圓W依序搬送至處理站11的收授裝置53。   [0038] 其次,晶圓W,係藉由晶圓搬送裝置70被搬送至第2區塊G2的熱處理裝置40,進行溫度調節處理。其後,晶圓W,係藉由晶圓搬送裝置70被搬送至例如第1區塊G1的下部反射防止膜形成裝置31,在晶圓W上形成下部反射防止膜。其後,晶圓W,係被搬送至第2區塊G2的熱處理裝置41,進行加熱處理。   [0039] 其後,晶圓W,係藉由晶圓搬送裝置70被搬送至第2區塊G2的熱處理裝置42,進行溫度調節處理。其後,晶圓W,係藉由晶圓搬送裝置70被搬送至第1區塊G1的光阻塗佈裝置32,在晶圓W上形成光阻膜。其後,晶圓W,係被搬送至熱處理裝置43,進行預烘烤處理。   [0040] 其次,晶圓W,係被搬送至第1區塊G1的上部反射防止膜形成裝置33,在晶圓W上形成上部反射防止膜。其後,晶圓W,係被搬送至第2區塊G2的熱處理裝置43,進行加熱處理。其後,晶圓W,係藉由晶圓搬送裝置70被搬送至第3區塊G3的收授裝置56。   [0041] 其次,晶圓W,係藉由晶圓搬送裝置100被搬送至收授裝置52,並藉由穿梭搬送裝置80被搬送至第4區塊G4的收授裝置62。其後,晶圓W,係藉由介面站13的晶圓搬送裝置110被搬送至曝光裝置12,以預定圖案進行曝光處理。   [0042] 其次,晶圓W,係藉由晶圓搬送裝置70被搬送至熱處理裝置40,進行曝光後烘烤處理。藉此,藉由在光阻膜的曝光部產生的酸,進行去保護反應。然後,晶圓W,係藉由晶圓搬送裝置70被搬送至顯像處理裝置30,進行顯像處理。   [0043] (第1實施形態)   其次,使用圖4及圖5,說明關於本發明之第1實施形態之顯像處理裝置30的構成。顯像處理裝置30,係如圖4所示,具有可密閉內部的處理容器130。在處理容器130的側面,係形成有晶圓W的搬入搬出口(未圖示)。   [0044] 在處理容器130內,係設置有保持晶圓W而使其繞垂直軸O旋轉的旋轉夾盤140。旋轉夾盤140,係可藉由例如馬達等的夾盤驅動部141而旋轉至預定速度。又,在夾盤驅動部141,係設置有氣缸等的升降驅動機構142,旋轉夾盤140,係升降自如。   [0045] 以包圍被保持於旋轉夾盤140的晶圓W之周圍的方式,設置罩杯150。罩杯150,係接取並回收從晶圓W飛散或落下的液體者。關於罩杯150的詳細內容,係如後所述。   [0046] 如圖5所示,在罩杯150的X方向負方向(圖5的下方向)側,係形成有沿著Y方向(圖5的左右方向)延伸的導軌160A~160D。導軌160A~160D,係例如從罩杯150之Y方向負方向(圖5的左方向)側的外方形成至Y方向正方向(圖5的右方向)側的外方。在導軌160A、160B、160C、160D,係分別安裝有支臂161、162、163、164。   [0047] 在第1臂部161,係支撐有供給「第1處理液」之一例即正型顯像液的正型顯像液供給噴嘴165。第1臂部161,係藉由噴嘴驅動部166,在導軌160A上移動自如。藉此,正型顯像液供給噴嘴165,係可從被設置於罩杯150之Y方向負方向側的外側之待機部167,移動至罩杯150內之晶圓W的中央部上方。又,藉由噴嘴驅動部166,第1臂部161,係可升降自如,且調節正型顯像液供給噴嘴165的高度。作為正型顯像液,係使用例如氫氧化四甲基銨(TMAH)。   [0048] 正型顯像液供給噴嘴165,係作為全體,具有圓筒形狀,如後述的圖6所示,其下端面165a,係被形成為例如與晶圓W呈平行之平坦的面。該下端面165a具有與正型顯像液接觸之接液面的功能。又,在下端面165a,係形成有供給顯像液的供給孔。供給孔的數量,係可任意選擇,亦可為1個或亦可為複數個。   [0049] 而且,正型顯像液供給噴嘴165的直徑,係被構成為比晶圓W的直徑小,在晶圓W的直徑為300mm之情況下,該噴嘴165的直徑,係例如直徑40mm。而且,正型顯像液供給噴嘴165,係由具有抗藥性之例如PTFE或石英等的材質所構成。   [0050] 在第2臂部162,係支撐有供給「第2處理液」之一例即負型顯像液的負型顯像液供給噴嘴168。在負型顯像液供給噴嘴168,係可採用例如與正型顯像液供給噴嘴165同形狀、同大小、同一構造者。   第2臂部162,係藉由噴嘴驅動部169,在導軌160D上移動自如。藉此,負型顯像液供給噴嘴168,係可從被設置於罩杯150之Y方向正方向側的外側之待機部170,移動至罩杯150內之晶圓W的中央部上方。又,藉由噴嘴驅動部169,第2臂部162,係可升降自如,且調節負型顯像液供給噴嘴168的高度。作為負型顯像液,係使用含有有機溶劑的顯像液,例如使用具有酯系溶劑即乙酸丁酯的顯像液。   [0051] 在第3臂部163,係支撐有供給正型用沖洗液的正型用沖洗液供給噴嘴171。第3臂部163,係藉由噴嘴驅動部172,在導軌160B上移動自如。藉此,正型用沖洗液供給噴嘴171,係可從被設置於罩杯150之Y方向負方向側且待機部167與罩杯150之間的位置之待機部173,移動至罩杯150內之晶圓W的中央部上方。又,藉由噴嘴驅動部172,第3臂部163,係可升降自如,且調節正型用沖洗液供給噴嘴171的高度。作為正型用沖洗液,係使用純水。   [0052] 在第4臂部164,係支撐有供給負型用沖洗液的負型用沖洗液供給噴嘴174。第4臂部164,係藉由噴嘴驅動部175,在導軌160C上移動自如。藉此,負型用沖洗液供給噴嘴174,係可從被設置於罩杯150之Y方向正方向側且待機部170與罩杯150之間的位置之待機部176,移動至罩杯150內之晶圓W的中央部上方。又,藉由噴嘴驅動部175,第4臂部164,係可升降自如,且調節負型用沖洗液供給噴嘴174的高度。作為負型用沖洗液,係使用例如 4-甲-2-戊醇(MIBC)。   [0053] 在此,使用圖6~圖8,說明關於顯像處理裝置30中之正型顯像處理的一例。另外,在以下的說明中,在晶圓W的表面,係形成有正型光阻膜,該光阻膜,係曝光完成。   在對於被保持於旋轉夾盤140之晶圓W的正型顯像處理之際,首先,使正型顯像液供給噴嘴165從待機部167移動至晶圓W的中央部上。而且,如圖6所示,以使正型顯像液供給噴嘴165之下端面165a接近且對向於晶圓W的方式,使該噴嘴165下降。接著,於使晶圓W停止的狀態下,或於以10rpm以下之旋轉速度使晶圓W旋轉的狀態下,從正型顯像液供給噴嘴165,使顯像液供給至晶圓W。藉此,在正型顯像液供給噴嘴165的下端面165a與晶圓W之間,以與該下端面165a接觸的方式,形成積液L。此時之顯像液的吐出流量,係例如、60~600ml/分。   [0054] 其次,使晶圓W之旋轉速度上升至30~ 100rpm,一面持續顯像液的供給,如圖7所示,一面使正型顯像液供給噴嘴165從晶圓W之中央部朝向周緣部側移動,從而使積液L在晶圓W的表面擴展。而且,下端面165a之端部到達晶圓W之周緣為止,例如花上2~15秒,使正型顯像液供給噴嘴165移動,形成覆蓋晶圓W之整面的積液L。   [0055] 在晶圓W之整面形成積液L後,則停止來自正型顯像液供給噴嘴165之顯像液的供給及晶圓W的旋轉,如圖8所示,使正型顯像液供給噴嘴165退避至待機部167。而且,於使晶圓W停止的狀態下,進行被形成於晶圓W上的積液L所致之靜止顯像。   [0056] 靜止顯像後,使正型用沖洗液供給噴嘴171從待機部173移動至晶圓W的中央部上。而且,從該噴嘴171對晶圓W供給純水,洗淨晶圓W。此時之晶圓W的旋轉速度,係例如100~1200rpm。   [0057] 而且,當純水所致之晶圓W的洗淨結束時,則使正型用沖洗液供給噴嘴171退避,並使晶圓W以例如2000rpm高速旋轉而實施甩乾。藉此,正型顯像處理結束。   [0058] 上述的正型顯像處理為一例,可應用本實施形態的正型顯像處理,係亦可包含其他工程來取代或附加於上述的工程。例如,形成積液L而使積液L擴展的動作,係亦可採用掃描輸入方式來取代掃瞄輸出方式,該掃描輸入方式,係在使晶圓W之周緣部側的上方位置位於正型顯像液供給噴嘴165並開始正型顯像液的吐出後,使正型顯像液供給噴嘴165移動至晶圓W的中央部,該掃瞄輸出方式,係使正型顯像液供給噴嘴165從晶圓W的中央部移動至周緣部側。又,亦可同時使用掃瞄輸出方式與掃描輸入方式。   [0059] 負型顯像處理,係與正型顯像處理相同,因此,省略其說明。   [0060] 返回到圖4的說明。   罩杯150,係具備有:罩杯本體151;及可動罩杯152,可對該罩杯本體151移動。   罩杯本體151,係具有:罩杯基體153;及固定罩杯154,被固定於該罩杯基體153。   [0061] 罩杯基體153,係具有環狀的外周壁153a與相同之環狀的內周壁153b,外周壁153a及內周壁153b,係被形成為被形成為沿上下方向(垂直方向)延伸。外周壁153a的內徑,係被形成為比晶圓W的直徑大,內周壁153b的外徑,係被形成為比晶圓W的直徑小,且內周壁153b的高度被形成為比外周壁153a的高度小。   又,罩杯基體153,係具有:底壁153c,連結外周壁153a的下端與內周壁153b的下端;及上壁153d,從外周壁153a的上端沿內周方向延伸,內周壁153b的上側呈開口。在內周壁153b的上端,係設置有沿內周方向延伸的突起153e,可藉由以固定罩杯154及保持板155來包夾該突起153e的方式,固定罩杯基體153。   [0062] 固定罩杯154,係構成位於外周壁153a與內周壁153b之間之環狀的內部構造體者。該固定罩杯154,係具有:環狀之周壁154a,位於外周壁153a與內周壁153b之間。又,固定罩杯154,係由朝向外周側逐漸變低之傾斜面(相當於「第1傾斜面」)154b形成有其上端的外周面。以下,將該傾斜面154b稱為外側傾斜面154b。如後述般,在外側傾斜面154b,係形成有階差。另外,外側傾斜面154b的下端,係連續於周壁154a的外周面。而且,固定罩杯154,係在比外側傾斜面154b更內周側,具有朝向內周側逐漸變低的內側傾斜面154c。   [0063] 可動罩杯152,係被設置為可在罩杯基體153的外周壁153a與固定罩杯154之間上下移動之環狀的構件,在上端具有分配部152a,並在分配部152a的下側具有周壁152b。分配部152a,係用以分開正型顯像液與負型顯像液而加以排出者,其上面由朝向外周側逐漸變低的傾斜面(相當於「第2傾斜面」)152c所形成。   周壁152b,係被形成為環狀,其內徑比固定罩杯154的周壁154a之外周的直徑大,其外徑比罩杯基體153的外周壁153a之內周的直徑小。又,在周壁152b的外周面連續有分配部152a之傾斜面152c的外周端。   [0064] 在可動罩杯152的上方,係設置有用以使可動罩杯152上升或下降的升降部156。   [0065] 返回到罩杯基體153的說明。在罩杯基體153的底壁153c,係形成有:二個分隔壁153f、153g,在外周壁153a與內周壁153b之間被形成為環狀。   又,底壁153c,係形成有:負型用回收口153h,在外周壁153a與外周側的分隔壁153f之間回收負型顯像液。而且,底壁153c,係在分隔壁153f、153g之間,形成有回收正型顯像液的正型用回收口153i;在內周側的分隔壁153g與內周壁153b之間,形成有回收被霧氣化之顯像液的霧氣用回收口153j。   [0066] 在負型用回收口153h與正型用回收口153i與霧氣用回收口153j,係連接有未圖示的泵等。   [0067] 接著,使用圖9~圖11,說明關於顯像處理裝置30中之顯像處理時之顯像液的排出。另外,關於被霧氣化之顯像液的排出,係省略說明。   [0068] 當正型顯像處理的情況下,在顯像處理裝置30中,係如圖9所示,使可動罩杯152上升,並且使被連接於正型用回收口153i的泵驅動。   藉此,在顯像處理裝置30中,係可將因晶圓W之旋轉而飛散的正型顯像液或迴繞至晶圓W之下側而落下的正型顯像液,從可動罩杯152的分配部152a與固定罩杯154之間引導至正型用回收口153i,並經由該回收口153i進行回收。   [0069] 另一方面,當負型顯像處理的情況下,在顯像處理裝置30中,係如圖10所示,使可動罩杯152下降,並且使被連接於負型用回收口153h的泵驅動。   藉此,在顯像處理裝置30中,係可將因晶圓W之旋轉而大致水平飛散的負型顯像液,從可動罩杯152的分配部152a與罩杯基體153的外周壁153a之間引導至負型用回收口153h,並經由該回收口153h進行回收。   [0070] 又,如圖11所示,在固定罩杯154之外側傾斜面154b的外周端,係形成有階差154d,當使可動罩杯152下降時,則(1)該可動罩杯152之分配部152a的內周側端下降至階差154d,此時,分配部152a之上面亦即傾斜面152c變得比形成階差154d之上側的面低。而且,(2)分配部152a之傾斜面152c的角度α,係變得比形成固定罩杯154的上側之面之角度的角度β大。   藉由上述(1)的構成,在晶圓W之旋轉時,即便負型顯像液不會大致水平飛散而相對於水平呈一角度飛散,該飛散之顯像液亦不會碰撞到分配部152a的內周側端。又,藉由上述(2)的構成,即便上述飛散之顯像液等碰撞到固定罩杯154的外側傾斜面154b,碰撞後之顯像液亦不會積聚於分配部152a與固定罩杯154之間而沿著分配部152a的傾斜面152c流去。   [0071] 因此,在顯像處理裝置30中,係可更確實地將從晶圓W飛散或落下的負型顯像液引導至負型用回收口153h。   因此,在顯像處理裝置30中,係即便為在負型顯像處理包含有低速旋轉工程的情況,亦可不使正型顯像液與負型顯像液混合而各別進行回收。   [0072] 另外,被設計成負型顯像液不會從下降了的可動罩杯152之分配部152a的內周側端與形成固定罩杯154之階差154d的下側之面之間的間隙流入,亦即該間隙變窄。   [0073] 又,可動罩杯152之分配部152a的傾斜面152c,係外周側之傾斜角度γ比內周側之傾斜角度α大為較佳。藉此,可在負型顯像液沿著傾斜面152c流動之際,使其更順暢地流動,又,與傾斜角度較大的情況相比,可遍及傾斜面152c之整面而抑制上下方向的尺寸。   [0074] 而且,可動罩杯152之分配部152a的內周側端部,係被形成為朝向內周側逐漸變薄為較佳。藉此,原因在於,負型顯像液變得難以積聚於下降了的可動罩杯152之分配部152a的內周側端與固定罩杯154之間。   [0075] 實際製作具有以上形狀的可動罩杯152,並進行了使可動罩杯152上下移動所致之正型顯像液與負型顯像液的排液分離後,可實際確認到,即便在包含晶圓W之旋轉速度為100rpm以下之工程的情況,亦可良好地進行排液分離。   [0076] (第2實施形態)   其次,使用圖12,說明關於本發明之第2實施形態之顯像處理裝置30的構成。   如圖12所示,第2實施形態之顯像處理裝置30的固定罩杯200,係在比外側傾斜面201之階差154d更內周側,具有:環狀之凹處202;及連通路徑203,使該凹處202連通於未圖示的排液路徑,在該點上,與第1實施形態的固定罩杯154不同。排液路徑,係被設置於例如保持板155(參閱圖4),在該排液路徑,係連接有泵。   [0077] 由於固定罩杯200如上述般所構成,因此,在來自晶圓W之負型顯像液碰撞到比外側傾斜面201之凹處202更內周面側的情況下,碰撞後而沿著外側傾斜面201移動的負型顯像液,係經由凹處202及連通路徑203等被排出。因此,由於可減少沿著固定罩杯200的外側傾斜面201移動而到達分配部152a與固定罩杯154之間的負型顯像液,因此,可更確實地防止負型顯像液與正型顯像液混合而被回收的情況。   [0078] (第3實施形態)   其次,使用圖13,說明關於本發明之第3實施形態之顯像處理裝置30的構成。   如圖13所示,第3實施形態之顯像處理裝置30的固定罩杯210,係在比外側傾斜面211之階差154d更內周側,具有環狀之彈性構件212。該彈性構件212,係被形成為具有與固定罩杯210之外側傾斜面211連續的上面,並且朝向外周側延伸而覆蓋可動罩杯152下降後時之分配部152a之內周側端的上方,在該點上,與第1實施形態的固定罩杯154不同。   [0079] 在本實施形態的顯像處理裝置30中,係具有上述的彈性構件212,藉此,負型顯像液不會從分配部152a的內周側端與固定罩杯210之間流入。因此,在本顯像處理裝置30中,係可更確實地防止負型顯像液與正型顯像液混合而被回收的情況。   [0080] (參考例)   使用圖14,說明關於參考例之顯像處理裝置的構成。   如圖14所示,本例的顯像處理裝置,係固定罩杯601之形狀與以往相同,在該點上,與第1實施形態的顯像處理裝置30不同。又,顯像處理裝置600的可動罩杯602,係被構成為分配部603之內周側前端可往內周方向延伸出,在該點上,與第1實施形態的顯像處理裝置30不同。   本例的顯像處理裝置中之正型顯像處理時之正型顯像液的排出工程,係與第1實施形態的顯像處理裝置30相同。   [0081] 在本例的顯像處理裝置中,係如上述般,由於可動罩杯602之分配部603的內周側前端可往內周方向延伸出,因此,在負型顯像處理之際,可在可動罩杯602下降後,使分配部603之內周側前端位於比晶圓W的外周端更內周側。藉此,負型顯像液不會流入可動罩杯602的分配部603與固定罩杯601之間。因此,在本例的顯像處理裝置中,係可更確實地防止負型顯像液與正型顯像液混合而被回收的情況。   [0082] 在以上中,雖係以將本發明應用於顯像處理裝置的例子來進行了說明,但只要為以2種類之處理液且同一模組來進行各別的基板處理,並各別回收各處理液者,則亦可將本發明應用於顯像處理裝置以外的基板處理裝置。又,在以上的例子中,雖係將正型顯像液之回收路徑設成為內周側而將負型顯像液之回收路徑設成為外周側,但亦可將正型顯像液之外周路徑設成為外周側而將負型顯像液之回收路徑設成為內周側。   [0083] 以上,雖參閱附加圖面說明了關於本發明之適當的實施形態,但本發明並不限定於該例。只要為本發明所屬技術領域中具有通常知識者,顯然可在申請專利範圍所記載之思想範疇內思及各種變更例或修正例,並了解關於該些當然亦屬於本發明的技術性範圍。本發明,係不限於該例,可採用各種態樣者。本發明,係亦可應用於基板為晶圓以外之FPD(平板顯示器)、光罩用之倍縮遮罩(mask reticle)等之其他基板的情形。 [產業上之可利用性]   [0084] 本發明,係在使用複數個種類之處理液(例如顯像液)而根據種類處理基板之際為有用。 Embodiments of the present invention will be described below. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the element which has substantially the same functional structure, and the repeated description is abbreviate|omitted. [0021] FIG. 1 is an explanatory plan view schematically showing the outline of the configuration of a substrate processing system 1 provided with a developing processing apparatus according to the present embodiment. 2 and 3 are a front view and a rear view schematically showing the outline of the internal structure of the substrate processing system 1, respectively. The substrate processing system 1, as shown in FIG. 1, has a structure in which the following are integrally connected: a cassette station 10, which carries in and out of cassettes C containing a plurality of wafers W; and a processing station 11, which includes There are a plurality of various processing apparatuses that perform predetermined processing on the wafer W; [0023] In the cassette station 10, a cassette mounting table 20 is provided. The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 on which the cassettes C are mounted when the cassettes C are loaded and unloaded to and from the outside of the substrate processing system 1 . [0024] As shown in FIG. 1, the cassette station 10 is provided with a wafer transfer device 23 that can move freely on a transfer path 22 extending in the X direction. The wafer transfer device 23 is also freely movable in the up-down direction and around the vertical axis (theta direction), and can move between the cassette C on each cassette mounting plate 21 and the third block G3 of the processing station 11 to be described later. The wafer W is transferred between the receiving and delivering apparatuses. [0025] In the processing station 11, a plurality of, for example, four blocks provided with various devices, that is, the first block G1 to the fourth block G4 are installed. For example, the first block G1 is provided on the front side of the processing station 11 (the negative side in the X direction in FIG. 1 ), and the back side of the processing station 11 (the positive side in the X direction in FIG. 1 , the upper side in the drawing) is provided. ), the system is provided with a second block G2. In addition, on the cassette station 10 side of the processing station 11 (the negative Y direction side in FIG. 1 ), the third block G3 described above is provided, and on the interface station 13 side of the processing station 11 (the Y direction in FIG. 1 ) Positive direction side), the fourth block G4 is provided. For example, in the first block G1, as shown in FIG. 2, a plurality of liquid processing apparatuses are arranged in the following order from below, for example: the developing processing apparatus 30 is used for developing processing on the wafer W; the lower The anti-reflection film forming device 31 forms an anti-reflection film (hereinafter referred to as the “lower anti-reflection film”) on the lower layer of the photoresist film of the wafer W; the photoresist coating device 32 applies a photoresist liquid to the wafer W Then, a photoresist film is formed; and the upper antireflection film forming device 33 forms an antireflection film (hereinafter referred to as "upper antireflection film") on the upper layer of the photoresist film of the wafer W. [0027] For example, the development processing device 30, the lower anti-reflection film forming device 31, the photoresist coating device 32, and the upper anti-reflection film forming device 33 are arranged in a row along the horizontal direction. In addition, the number and arrangement of the image development processing apparatuses 30 , the lower anti-reflection film forming apparatus 31 , the photoresist coating apparatus 32 , and the upper anti-reflection film forming apparatus 33 can be arbitrarily selected. In these lower anti-reflection film forming apparatus 31, photoresist coating apparatus 32, upper anti-reflection film forming apparatus 33, for example, carry out: spin coating, apply predetermined coating liquid on wafer W . In spin coating, for example, a coating liquid is discharged onto the wafer W from a coating nozzle, and the wafer W is rotated to spread the coating liquid on the surface of the wafer W. In addition, the configuration of the development processing device 30 will be described later. [0029] For example, in the second block G2, as shown in FIG. 3 , a plurality of heat treatment apparatuses 40 to 43 are provided to perform heat treatment such as heating and cooling of the wafer W. [0030] For example, in the third block G3, as shown in FIG. 2 and FIG. 3 , a plurality of receiving and transmitting devices 50, 51, 52, 53, 54, 55, and 56 are sequentially arranged from below. Moreover, in the 4th block G4, as shown in FIG. 3, a plurality of transmission/reception apparatuses 60, 61, 62 are installed in order from the bottom. [0031] As shown in FIG. 1 , a wafer transfer area D is formed in an area surrounded by the first block G1 to the fourth block G4. In the wafer transfer area D, a plurality of wafer transfer devices 70 having transfer arms movable in the Y direction, the X direction, the θ direction, and the up-down direction, for example, are arranged. The wafer transfer device 70 moves in the wafer transfer area D, and can move within the first block G1 , the second block G2 , the third block G3 and the fourth block G4 which are located in the surrounding area. Wafer W is transferred between apparatuses. [0032] Further, in the wafer transfer area D, as shown in FIG. 3 , there is provided a shuttle transfer device 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4. [0033] The shuttle 80 is freely movable linearly, for example, in the Y direction in FIG. 3 . The shuttle transfer device 80 is capable of moving in the Y direction in a state where the wafer W is supported, and transfers the wafer between the transfer device 52 in the third block G3 and the transfer device 62 in the fourth block G4 W. [0034] As shown in FIG. 1 , a wafer transfer apparatus 100 is provided on the side of the third block G3 in the positive direction in the X direction. The wafer transfer apparatus 100 includes, for example, a transfer arm that can move freely in the X direction, the θ direction, and the vertical direction. The wafer transfer apparatus 100 is capable of moving up and down in a state where the wafer W is supported, and transfers the wafer W to each transfer device in the third block G3. [0035] The interface station 13 is provided with a wafer transfer device 110 and a receiving and delivering device 111. The wafer transfer apparatus 110 has a transfer arm that can move freely in the Y direction, the θ direction, and the vertical direction, for example. The wafer transfer device 110 can support the wafer W on the transfer arm, for example, and transfer the wafer W among the transfer devices, the transfer device 111 , and the exposure device 12 in the fourth block G4 . [0036] In the above substrate processing system 1, as shown in FIG. 1, a control unit 300 is provided. The control unit 300 is, for example, a computer, and has a program storage unit (not shown). In the program storage section, a program for controlling the processing of the wafer W in the substrate processing system 1 is stored. In addition, in the program storage unit, the operation of the drive system for controlling the above-mentioned various processing devices, conveying devices, etc. is also stored, and even the nozzle drive units 166 , 169 , 172 , 175 , the lifting unit 156 , etc., which will be described later, are also controlled. A program of the development process described later in the substrate processing system 1 . In addition, the aforementioned programs can also be recorded on computer-readable hard disks (HD), floppy disks (FD), compact disks (CD), magneto-optical disks (MO), memory cards, etc. the storage medium, and is installed in the control unit 300 from the storage medium. [0037] Next, an outline of wafer processing using the substrate processing system 1 configured as described above will be described. First, the cassette C containing a plurality of wafers W is carried into the cassette station 10 of the substrate processing system 1 , and the wafers W in the cassette C are sequentially transferred to the processing station by the wafer transfer device 23 . 11 of the receiving device 53. [0038] Next, the wafer W is transferred by the wafer transfer device 70 to the heat treatment device 40 of the second block G2, and subjected to a temperature adjustment process. After that, the wafer W is transferred to, for example, the lower anti-reflection film forming apparatus 31 of the first block G1 by the wafer transfer apparatus 70, and the lower anti-reflection film is formed on the wafer W. After that, the wafer W is transferred to the heat treatment apparatus 41 of the second block G2 and subjected to heat treatment. [0039] Thereafter, the wafer W is transferred by the wafer transfer device 70 to the heat treatment device 42 of the second block G2, and subjected to a temperature adjustment process. After that, the wafer W is transferred to the photoresist coating device 32 of the first block G1 by the wafer transfer device 70, and a photoresist film is formed on the wafer W. As shown in FIG. After that, the wafer W is transferred to the heat treatment apparatus 43 and subjected to a prebake treatment. [0040] Next, the wafer W is transferred to the upper anti-reflection film forming apparatus 33 of the first block G1, and an upper anti-reflection film is formed on the wafer W. After that, the wafer W is transferred to the heat treatment apparatus 43 of the second block G2 and subjected to heat treatment. Thereafter, the wafer W is transferred to the receiving and delivering device 56 of the third block G3 by the wafer transfer device 70 . [0041] Next, the wafer W is transferred to the receiving and delivering device 52 by the wafer transfer device 100, and is transferred to the receiving and delivering device 62 of the fourth block G4 by the shuttle transfer device 80. Thereafter, the wafer W is transferred to the exposure device 12 by the wafer transfer device 110 of the interface station 13, and subjected to exposure processing in a predetermined pattern. [0042] Next, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 70, and a post-exposure bake process is performed. Thereby, a deprotection reaction is performed by the acid which generate|occur|produces in the exposure part of a photoresist film. Then, the wafer W is transported to the development processing apparatus 30 by the wafer transport apparatus 70, and development processing is performed. [0043] (First Embodiment) Next, the configuration of the development processing apparatus 30 according to the first embodiment of the present invention will be described with reference to FIG. 4 and FIG. 5 . As shown in FIG. 4 , the development processing apparatus 30 has a processing container 130 whose interior can be sealed. On the side surface of the processing container 130 , a loading and unloading port (not shown) for the wafer W is formed. [0044] Inside the processing chamber 130, a spin chuck 140 that holds the wafer W and rotates about the vertical axis O is provided. The rotating chuck 140 can be rotated to a predetermined speed by a chuck driving part 141 such as a motor. In addition, the chuck drive part 141 is provided with a lift drive mechanism 142 such as an air cylinder, and the chuck 140 is rotated so that it can move up and down. [0045] The breast cup 150 is provided so as to surround the circumference of the wafer W held by the spin chuck 140. The cup 150 receives and collects liquid scattered or dropped from the wafer W. As shown in FIG. Details of the breast cup 150 will be described later. [0046] As shown in FIG. 5 , guide rails 160A to 160D extending along the Y direction (left-right direction in FIG. 5 ) are formed on the side of the breast cup 150 in the negative direction of the X direction (the downward direction in FIG. 5 ). The guide rails 160A to 160D are formed, for example, from the outside of the breast cup 150 on the side in the negative Y direction (left direction in FIG. 5 ) to the outside on the positive direction in the Y direction (right direction in FIG. 5 ). On the guide rails 160A, 160B, 160C, and 160D, support arms 161, 162, 163, and 164 are installed, respectively. [0047] In the first arm portion 161, a positive-type developer supply nozzle 165 for supplying a positive-type developer, which is an example of the "first processing liquid", is supported. The first arm portion 161 is freely movable on the guide rail 160A by the nozzle drive portion 166 . Thereby, the positive-type developer supply nozzle 165 can be moved from the standby portion 167 provided on the outer side of the breast cup 150 on the negative side in the Y direction to above the central portion of the wafer W in the breast cup 150 . In addition, by the nozzle driving part 166, the first arm part 161 can be moved up and down freely, and the height of the positive type developer supply nozzle 165 can be adjusted. As a positive type developer, for example, tetramethylammonium hydroxide (TMAH) is used. [0048] The positive type developer supply nozzle 165 has a cylindrical shape as a whole, and as shown in FIG. The lower end surface 165a has the function of a liquid contact surface that is in contact with the positive type developing liquid. In addition, a supply hole for supplying the developer is formed on the lower end surface 165a. The number of supply holes may be arbitrarily selected, and may be one or plural. Furthermore, the diameter of the positive-type developer supply nozzle 165 is configured to be smaller than the diameter of the wafer W, and when the diameter of the wafer W is 300 mm, the diameter of the nozzle 165 is, for example, 40 mm in diameter . Further, the positive type developer supply nozzle 165 is made of a material having chemical resistance such as PTFE or quartz. [0050] The second arm portion 162 is supported by a negative-type developer supply nozzle 168 for supplying a negative-type developer, which is an example of the "second processing liquid". For the negative type developer supply nozzle 168, for example, the same shape, the same size, and the same structure as the positive type developer supply nozzle 165 can be used. The second arm portion 162 is freely movable on the guide rail 160D by the nozzle driving portion 169 . Thereby, the negative developer supply nozzle 168 can be moved from the standby portion 170 provided on the outer side of the breast cup 150 on the positive Y direction side to above the central portion of the wafer W in the breast cup 150 . In addition, the nozzle driving part 169 and the second arm part 162 can be moved up and down freely, and the height of the negative developer liquid supply nozzle 168 can be adjusted. As a negative developer, a developer containing an organic solvent, for example, a developer containing butyl acetate as an ester solvent is used. [0051] On the third arm portion 163, a positive-type flushing liquid supply nozzle 171 for supplying a positive-type flushing liquid is supported. The third arm portion 163 is freely movable on the guide rail 160B by the nozzle driving portion 172 . Thereby, the positive-type rinse liquid supply nozzle 171 can be moved to the wafer in the cup 150 from the standby portion 173 provided on the negative Y direction side of the breast cup 150 and between the standby portion 167 and the breast cup 150 . Above the center of the W. In addition, the nozzle driving part 172 and the third arm part 163 can be moved up and down freely, and the height of the flushing liquid supply nozzle 171 for positive type can be adjusted. Pure water was used as the flushing liquid for positive type. [0052] The fourth arm portion 164 is supported by a negative-type rinse liquid supply nozzle 174 for supplying a negative-type rinse liquid. The fourth arm portion 164 is freely movable on the guide rail 160C by the nozzle driving portion 175 . As a result, the negative-type rinse liquid supply nozzle 174 can be moved to the wafer in the breast cup 150 from the standby portion 176 provided on the positive side of the breast cup 150 in the Y direction and between the standby portion 170 and the breast cup 150 . Above the center of the W. Moreover, by the nozzle drive part 175, the 4th arm part 164 can raise and lower freely, and can adjust the height of the rinse liquid supply nozzle 174 for a negative type. As a rinsing solution for the negative type, for example, 4-methyl-2-pentanol (MIBC) is used. [0053] Here, an example of the positive-type developing process in the developing processing device 30 will be described with reference to FIGS. 6 to 8 . In addition, in the following description, a positive photoresist film is formed on the surface of the wafer W, and the exposure of the photoresist film is completed. In the positive development process on the wafer W held on the spin chuck 140 , first, the positive development liquid supply nozzle 165 is moved from the standby portion 167 to the center portion of the wafer W. Then, as shown in FIG. 6 , the nozzle 165 is lowered so that the lower end surface 165 a of the positive-type developer supply nozzle 165 is brought close to and faces the wafer W. As shown in FIG. Next, the developer is supplied to the wafer W from the positive type developer supply nozzle 165 while the wafer W is stopped or the wafer W is rotated at a rotational speed of 10 rpm or less. As a result, between the lower end surface 165a of the positive-type developer supply nozzle 165 and the wafer W, a liquid pool L is formed so as to be in contact with the lower end surface 165a. The discharge flow rate of the developer at this time is, for example, 60 to 600 ml/min. Next, the rotational speed of the wafer W is raised to 30 to 100 rpm, and the supply of the developer is continued, as shown in FIG. The peripheral portion side moves, and the liquid accumulation L spreads on the surface of the wafer W. As shown in FIG. Then, until the end of the lower end surface 165a reaches the periphery of the wafer W, it takes, for example, 2 to 15 seconds to move the positive-type developer supply nozzle 165 to form a liquid pool L covering the entire surface of the wafer W. After the liquid accumulation L is formed on the entire surface of the wafer W, the supply of the developer from the positive-type developer supply nozzle 165 and the rotation of the wafer W are stopped, and as shown in FIG. The image liquid supply nozzle 165 retreats to the standby unit 167 . Then, in a state where the wafer W is stopped, still imaging due to the liquid accumulation L formed on the wafer W is performed. [0056] After the still development, the positive-type rinse liquid supply nozzle 171 is moved from the standby portion 173 to the central portion of the wafer W. Then, pure water is supplied to the wafer W from the nozzle 171, and the wafer W is cleaned. The rotational speed of the wafer W at this time is, for example, 100 to 1200 rpm. [0057] Then, when the cleaning of the wafer W by pure water is completed, the positive-type rinsing liquid supply nozzle 171 is retracted, and the wafer W is rotated at a high speed of, for example, 2000 rpm to perform spin drying. Thereby, the positive-type development process ends. [0058] The above-mentioned positive-type development process is an example, and the positive-type development process of this embodiment can be applied, and other processes can also be included to replace or add to the above-mentioned processes. For example, in the operation of forming the liquid accumulation L and expanding the liquid accumulation L, a scan input method may be used instead of the scan output method, and the scan input method is such that the upper position on the peripheral side of the wafer W is located in the positive type After the developer supply nozzle 165 starts to discharge the positive type developer, the positive type developer supply nozzle 165 is moved to the center of the wafer W. In this scan output method, the positive type developer supply nozzle is 165 is moved from the central portion of the wafer W to the peripheral portion side. In addition, the scan output method and the scan input method may be used at the same time. [0059] The negative-type development process is the same as the positive-type development process, so the description thereof is omitted. [0060] Return to the description of FIG. 4 . The breast cup 150 is provided with: a breast cup body 151 ; and a movable breast cup 152 , which can move the breast cup body 151 . The breast cup body 151 has: a breast cup base body 153 ; and a fixed breast cup 154 , which is fixed to the breast cup base body 153 . [0061] The cup base 153 has an annular outer peripheral wall 153a and an annular inner peripheral wall 153b, and the outer peripheral wall 153a and the inner peripheral wall 153b are formed to extend in the up-down direction (vertical direction). The inner diameter of the outer peripheral wall 153a is formed to be larger than the diameter of the wafer W, the outer diameter of the inner peripheral wall 153b is formed to be smaller than the diameter of the wafer W, and the height of the inner peripheral wall 153b is formed to be larger than that of the outer peripheral wall. The height of 153a is small. The cup base 153 has a bottom wall 153c connecting the lower end of the outer peripheral wall 153a and the lower end of the inner peripheral wall 153b, and an upper wall 153d extending from the upper end of the outer peripheral wall 153a in the inner peripheral direction, and the upper side of the inner peripheral wall 153b is open . The upper end of the inner peripheral wall 153b is provided with a projection 153e extending in the inner peripheral direction, and the breast cup base 153 can be fixed by sandwiching the projection 153e by the fixing breast cup 154 and the holding plate 155 . [0062] The fixed cup 154 constitutes an annular internal structure located between the outer peripheral wall 153a and the inner peripheral wall 153b. The fixed breast cup 154 has an annular peripheral wall 154a located between the outer peripheral wall 153a and the inner peripheral wall 153b. In addition, the fixed cup 154 has an outer peripheral surface having an upper end formed by an inclined surface (corresponding to a "first inclined surface") 154b which gradually decreases toward the outer peripheral side. Hereinafter, this inclined surface 154b is referred to as an outer inclined surface 154b. As will be described later, a level difference is formed on the outer inclined surface 154b. In addition, the lower end of the outer inclined surface 154b is continuous with the outer peripheral surface of the peripheral wall 154a. Moreover, the fixed breast cup 154 is attached to the inner peripheral side than the outer inclined surface 154b, and has the inner inclined surface 154c which gradually becomes lower toward the inner peripheral side. The movable breast cup 152 is provided as an annular member that can move up and down between the outer peripheral wall 153a of the breast cup base 153 and the fixed breast cup 154, and has a distribution portion 152a at the upper end and a lower side of the distribution portion 152a. Peripheral wall 152b. The distributing portion 152a is used to separate and discharge the positive type developer liquid and the negative type developer liquid, and the upper surface thereof is formed by a sloped surface (corresponding to a "second sloped surface") 152c that gradually decreases toward the outer peripheral side. The peripheral wall 152b is formed in an annular shape, and its inner diameter is larger than the outer diameter of the peripheral wall 154a of the fixed breast cup 154, and its outer diameter is smaller than the inner diameter of the outer peripheral wall 153a of the breast cup base 153. Moreover, the outer peripheral end of the inclined surface 152c of the distribution part 152a is continuous with the outer peripheral surface of the peripheral wall 152b. [0064] Above the movable breast cup 152, a lift portion 156 for raising or lowering the movable breast cup 152 is provided. [0065] Returning to the description of the cup base 153. The bottom wall 153c of the cup base 153 is formed with two partition walls 153f and 153g, which are formed in a ring shape between the outer peripheral wall 153a and the inner peripheral wall 153b. In addition, the bottom wall 153c is formed with a negative-type recovery port 153h, and the negative-type developer liquid is recovered between the outer peripheral wall 153a and the partition wall 153f on the outer peripheral side. Furthermore, the bottom wall 153c is fastened between the partition walls 153f and 153g, and a positive-type recovery port 153i for recovering the positive-type developer is formed; The mist recovery port 153j of the misted developer is provided. [0066] The collection port 153h for the negative type, the recovery port 153i for the positive type, and the recovery port 153j for the mist are connected with a pump or the like not shown. [0067] Next, with reference to FIGS. 9 to 11 , the discharge of the developing solution during the developing process in the developing processing device 30 will be described. In addition, the description of the discharge of the misted developer is omitted. [0068] In the case of the positive type development process, in the development processing device 30, as shown in FIG. 9, the movable cup 152 is raised, and the pump connected to the positive type recovery port 153i is driven. In this way, in the developing processing apparatus 30, the positive-tone developer that is scattered due to the rotation of the wafer W or the positive-tone developer that is rewound to the lower side of the wafer W and falls down can be released from the movable cup 152 from the movable cup 152. The space between the distribution part 152a and the fixed cup 154 is guided to the recovery port 153i for the positive type, and is recovered through the recovery port 153i. On the other hand, in the case of negative-type development processing, in the development processing device 30, as shown in FIG. 10, the movable cup 152 is lowered, and the recovery port 153h connected to the negative-type collection port 153h is lowered. Pump drive. In this way, in the developing processing apparatus 30, the negative developing liquid that is scattered approximately horizontally due to the rotation of the wafer W can be guided from between the distribution portion 152a of the movable cup 152 and the outer peripheral wall 153a of the cup base 153 It reaches the recovery port 153h for negative type, and is recovered through the recovery port 153h. [0070] Also, as shown in FIG. 11, a step 154d is formed at the outer peripheral end of the outer inclined surface 154b of the fixed breast cup 154. When the movable breast cup 152 is lowered, (1) the distribution portion of the movable breast cup 152 is formed. The inner peripheral side end of the 152a descends to the level difference 154d, and at this time, the upper surface of the distribution portion 152a, that is, the inclined surface 152c becomes lower than the surface forming the upper side of the level difference 154d. And (2) the angle α of the inclined surface 152c of the distribution part 152a becomes larger than the angle β which forms the angle of the upper side surface of the fixed breast cup 154. With the configuration of the above (1), when the wafer W is rotated, even if the negative-type developer does not scatter approximately horizontally but scatters at an angle with respect to the horizontal, the scattered developer does not collide with the dispensing portion. The inner peripheral side end of 152a. In addition, with the above-mentioned configuration (2), even if the scattered developer or the like collides with the outer inclined surface 154b of the fixed cup 154, the developer after the collision will not accumulate between the distribution portion 152a and the fixed cup 154 And it flows along the inclined surface 152c of the distribution part 152a. [0071] Therefore, in the development processing apparatus 30, the negative-type developing solution scattered or dropped from the wafer W can be guided to the negative-type recovery port 153h more reliably. Therefore, in the developing processing apparatus 30, even if the negative-working developing process includes a low-speed rotation process, the positive-working developing solution and the negative-working developing solution can be recovered separately without mixing. In addition, it is designed so that the negative-type developer does not flow into the gap between the inner peripheral side end of the distributing portion 152a of the movable cup 152 and the lower surface forming the step 154d of the fixed cup 154. , that is, the gap narrows. [0073] In addition, the inclined surface 152c of the distribution portion 152a of the movable breast cup 152 preferably has an inclination angle γ on the outer peripheral side larger than an inclination angle α on the inner peripheral side. Thereby, when the negative-type developer flows along the inclined surface 152c, it can flow more smoothly, and the vertical direction can be suppressed over the entire surface of the inclined surface 152c compared with the case where the inclination angle is large. size of. [0074] Furthermore, it is preferable that the inner peripheral end portion of the distribution portion 152a of the movable breast cup 152 is formed to gradually become thinner toward the inner peripheral side. This is because it becomes difficult for the negative-type developer to accumulate between the inner peripheral side end of the distribution portion 152a of the movable cup 152 and the fixed cup 154. After actually producing the movable breast cup 152 having the above shape, and performing the discharge and separation of the positive-type developing liquid and the negative-type developing liquid caused by moving the movable cup 152 up and down, it can be actually confirmed that even if the movable breast cup 152 contains In the case of a process in which the rotation speed of the wafer W is 100 rpm or less, the liquid drain separation can also be performed well. [0076] (Second Embodiment) Next, with reference to FIG. 12, the configuration of the development processing apparatus 30 according to the second embodiment of the present invention will be described. As shown in FIG. 12 , the fixed cup 200 of the development processing apparatus 30 of the second embodiment is located on the inner peripheral side than the step 154d of the outer inclined surface 201, and has: an annular recess 202; and a communication path 203 In this point, it is different from the fixed breast cup 154 of the first embodiment so that the recess 202 is communicated with a drainage path (not shown). The drain path is provided in, for example, the holding plate 155 (see FIG. 4 ), and a pump is connected to the drain path. Since the fixed cup 200 is configured as described above, when the negative developing liquid from the wafer W collides with the inner peripheral surface side than the recess 202 of the outer inclined surface 201, the collision is The negative-type developing liquid moving along the outer inclined surface 201 is discharged through the recess 202, the communication path 203, and the like. Therefore, since it is possible to reduce the amount of negative-type developing solution that travels along the outer inclined surface 201 of the fixed breast cup 200 and reaches between the distribution part 152a and the fixed breast-cup 154, it is possible to more reliably prevent the negative-type developing solution from the positive-type developing solution. When the image liquid is mixed and recovered. [0078] (Third Embodiment) Next, with reference to FIG. 13, the configuration of the development processing apparatus 30 according to the third embodiment of the present invention will be described. As shown in FIG. 13 , the fixed cup 210 of the imaging processing apparatus 30 of the third embodiment has a ring-shaped elastic member 212 on the inner peripheral side than the step 154d of the outer inclined surface 211 . The elastic member 212 is formed to have an upper surface continuous with the outer inclined surface 211 of the fixed breast cup 210, and extends toward the outer peripheral side to cover the upper part of the inner peripheral side end of the distributing portion 152a after the movable breast cup 152 is lowered, at this point In the above, it is different from the fixed cup 154 of the first embodiment. [0079] In the developing processing apparatus 30 of the present embodiment, the above-mentioned elastic member 212 is provided, whereby the negative developing liquid does not flow in from between the inner peripheral side end of the distribution portion 152a and the fixed cup 210. Therefore, in this developing processing apparatus 30, it is possible to more reliably prevent the negative-type developing liquid and the positive-type developing liquid from being mixed and collected. [0080] (Reference Example) The configuration of the development processing apparatus according to the reference example will be described with reference to FIG. 14 . As shown in FIG. 14, the developing processing apparatus of this example differs from the developing processing apparatus 30 of the first embodiment in that the shape of the fixed cup 601 is the same as that of the conventional one. In addition, the movable cup 602 of the development processing apparatus 600 differs from the development processing apparatus 30 of the first embodiment in that the front end on the inner peripheral side of the distribution portion 603 can be extended in the inner peripheral direction. In the development processing apparatus of this example, the discharge process of the positive type developing solution during the positive type development processing is the same as that of the development processing apparatus 30 of the first embodiment. In the development processing apparatus of this example, as described above, since the inner peripheral side front end of the distributing portion 603 of the movable cup 602 can extend in the inner peripheral direction, in the case of the negative type development processing, After the movable breast cup 602 is lowered, the inner peripheral end of the distribution portion 603 may be positioned on the inner peripheral side than the outer peripheral end of the wafer W. As shown in FIG. Thereby, the negative-type developer does not flow into between the distribution part 603 of the movable breast cup 602 and the fixed breast cup 601 . Therefore, in the developing processing apparatus of this example, it is possible to more reliably prevent the negative-type developing liquid and the positive-type developing liquid from being mixed and recovered. In the above, although the example in which the present invention is applied to a developing processing apparatus has been described, as long as two types of processing liquids and the same module are used to perform separate substrate processing, each If each processing liquid is recovered, the present invention may be applied to substrate processing apparatuses other than image development processing apparatuses. In addition, in the above example, although the collection path of the positive type developing solution is set to the inner peripheral side and the collection path of the negative type developing solution is set to the outer peripheral side, it is also possible to set the outer peripheral side of the positive type developing solution. The path is set on the outer peripheral side, and the recovery path of the negative developing solution is set on the inner peripheral side. [0083] In the above, although a suitable embodiment of the present invention has been described with reference to the accompanying drawings, the present invention is not limited to this example. As long as one has ordinary knowledge in the technical field to which the present invention pertains, it is obvious that various modifications and amendments can be conceived within the scope of the ideas described in the scope of the patent application, and it is understood that these also belong to the technical scope of the present invention. The present invention is not limited to this example, and various aspects can be employed. The present invention can also be applied to other substrates such as FPDs (flat panel displays) other than wafers, mask reticles for photomasks, and the like as substrates. [Industrial Applicability] [0084] The present invention is useful when a plurality of types of processing liquids (eg, developing liquids) are used to process a substrate according to the type.

[0085]1‧‧‧基板處理系統30‧‧‧顯像處理裝置140‧‧‧旋轉夾盤142‧‧‧升降驅動機構150‧‧‧罩杯151‧‧‧罩杯本體152‧‧‧可動罩杯152a‧‧‧分配部153‧‧‧罩杯基體153a‧‧‧外周壁153c‧‧‧底壁153h‧‧‧負型用回收口154、200、210‧‧‧固定罩杯154b、201、211‧‧‧外側傾斜面154d‧‧‧階差165‧‧‧正型顯像液供給噴嘴168‧‧‧負型顯像液供給噴嘴171‧‧‧正型用沖洗液供給噴嘴174‧‧‧負型用沖洗液供給噴嘴202‧‧‧凹處203‧‧‧連通路徑212‧‧‧彈性構件300‧‧‧控制部[0085] 1‧‧‧Substrate Processing System 30‧‧‧Development Processing Device 140‧‧‧Rotating Chuck 142‧‧‧Elevating Drive Mechanism 150‧‧‧Cup Cup 151‧‧‧Cup Body 152‧‧‧Moveable Breast Cup 152a ‧‧‧Distribution part 153‧‧‧Cup base 153a‧‧‧Outer peripheral wall 153c‧‧‧Bottom wall 153h‧‧‧Recovery openings for negative type 154, 200, 210‧‧‧Fixing cup 154b, 201, 211‧‧‧ Outer inclined surface 154d‧‧‧Step difference 165‧‧‧Positive type developer supply nozzle 168‧‧‧Negative type developer supply nozzle 171‧‧‧Rinse liquid supply nozzle for positive type 174‧‧‧Rinse for negative type Liquid supply nozzle 202‧‧‧recess 203‧‧‧communication path 212‧‧‧elastic member 300‧‧‧control section

[0019]   [圖1] 表示搭載了本實施形態之顯像處理裝置之基板處理系統之構成之概略的平面圖。   [圖2] 示意地表示圖1之基板處理系統之構成之概略的正視圖。   [圖3] 示意地表示圖1之基板處理系統之構成之概略的後視圖。   [圖4] 示意地表示本發明之第1實施形態之顯像處理裝置之構成之概略的縱剖面圖。   [圖5] 示意地表示本發明之第1實施形態之顯像處理裝置之構成之概略的橫剖面圖。   [圖6] 表示在晶圓上形成顯像液之積液的樣子之從側面觀察的說明圖。   [圖7] 表示在晶圓上使顯像液之積液往外周方向擴散的樣子之從側面觀察的說明圖。   [圖8] 表示在晶圓上使顯像液之積液往外周方向擴散的樣子之從側面觀察的說明圖。   [圖9] 示意地表示正型顯像處理之際之回收罩杯之狀態的說明剖面圖。   [圖10] 示意地表示負型顯像處理之際之回收罩杯之狀態的說明剖面圖。   [圖11] 表示負型顯像處理之際的回收罩杯中之固定罩杯與可動罩杯之邊界部分之狀態的說明剖面圖。   [圖12] 本發明之第2實施形態之顯像處理裝置的說明剖面圖。   [圖13] 本發明之第3實施形態之顯像處理裝置的說明剖面圖。   [圖14] 參考例之顯像處理裝置的說明圖。   [圖15] 表示以往的顯像處理裝置中之正型顯像處理之際之回收罩杯之狀態的說明剖面圖。   [圖16] 表示以往的顯像處理裝置中之負型顯像處理之際之回收罩杯之狀態的說明剖面圖。   [圖17] 以往的顯像處理裝置中之課題的說明圖。   [圖18] 以往的顯像處理裝置中之課題的其他說明圖。[0019] [FIG. 1] A plan view showing an outline of the configuration of a substrate processing system equipped with the imaging processing apparatus of the present embodiment. [Fig. 2] A schematic front view showing the structure of the substrate processing system of Fig. 1. [Fig. 3] A schematic rear view showing the configuration of the substrate processing system of Fig. 1. [ Fig. 4] Fig. 4 is a longitudinal cross-sectional view schematically showing the outline of the configuration of the development processing apparatus according to the first embodiment of the present invention. [ Fig. 5] Fig. 5 is a cross-sectional view schematically showing the outline of the configuration of the development processing apparatus according to the first embodiment of the present invention. [Fig. 6] An explanatory view from a side view showing how the developer liquid is formed on the wafer. [Fig. 7] An explanatory view from a side view showing a state in which the accumulated liquid of the developer is diffused in the outer peripheral direction on the wafer. [Fig. 8] An explanatory view from a side view showing a state in which the accumulated liquid of the developer is diffused in the outer peripheral direction on the wafer. [Fig. 9] An explanatory cross-sectional view schematically showing a state in which the cup is recovered at the time of positive image development. [Fig. 10] An explanatory cross-sectional view schematically showing the state of the recovery of the cup during the negative development process. [Fig. 11] An explanatory cross-sectional view showing the state of the boundary portion between the fixed cup and the movable cup in the recovered cups at the time of negative development. [FIG. 12] An explanatory cross-sectional view of a development processing apparatus according to a second embodiment of the present invention. [FIG. 13] An explanatory cross-sectional view of a development processing apparatus according to a third embodiment of the present invention. [Fig. 14] An explanatory diagram of the development processing apparatus of the reference example. [Fig. 15] An explanatory cross-sectional view showing a state of recovering a breast cup at the time of a positive-type developing process in a conventional developing device. [Fig. 16] An explanatory cross-sectional view showing a state of recovering a breast cup at the time of a negative-type developing process in a conventional developing device. [Fig. 17] An explanatory diagram of a problem in a conventional development processing apparatus. [Fig. 18] Another explanatory diagram of the problems in the conventional development processing apparatus.

152‧‧‧可動罩杯 152‧‧‧Moveable cup

152a‧‧‧分配部 152a‧‧‧Distribution Department

152c‧‧‧傾斜面 152c‧‧‧Slope

154‧‧‧固定罩杯 154‧‧‧Fixed cup

154b‧‧‧外側傾斜面 154b‧‧‧Outside inclined surface

154d‧‧‧階差 154d‧‧‧step

W‧‧‧晶圓 W‧‧‧Wafer

Claims (6)

一種基板處理裝置,係對可繞垂直軸旋轉地被支撐之基板供給第1處理液或第2處理液而處理前述基板,並且以回收罩杯回收來自前述基板的處理液,該基板處理裝置,其特徵係,前述回收罩杯,係具備有:罩杯本體,具有:環狀之外周壁,比前述基板大;環狀之內部構造體,由朝向外周側逐漸變低之第1傾斜面形成有上端的外周面;及底壁,前述第1處理液之回收口被設置於內周側,前述第2處理液之回收口被設置於外周側;及可動罩杯,在上端具有分配部,並且被設置為可在前述罩杯本體的前述外周壁與前述內部構造體之間上下移動,該分配部,係上面由朝向外周側逐漸變低之第2傾斜面所形成,以使該可動罩杯上升的方式,將前述第1處理液從前述分配部與前述內部構造體之間引導至前述第1處理液的回收口,並以使前述可動罩杯下降的方式,將前述第2處理液從前述分配部與前述外周壁之間引導至前述第2處理液的回收口,前述罩杯本體,係在前述第1傾斜面之外周側端具有階差,在前述可動罩杯下降時,前述分配部之內周側端下降 至前述階差,前述分配部之上面變得比形成前述階差之上側的面低,前述分配部之前述第2傾斜面的角度,係比前述第1傾斜面的角度大。 A substrate processing apparatus for processing the substrate by supplying a first processing liquid or a second processing liquid to a substrate rotatably supported around a vertical axis, and recovering the processing liquid from the substrate with a recovery cup, the substrate processing apparatus comprising: It is characterized in that the recovered breast cup is provided with: a cup body having: an annular outer peripheral wall, which is larger than the base plate; an outer peripheral surface; and a bottom wall, the recovery port for the first treatment liquid is provided on the inner peripheral side, and the recovery port for the second treatment liquid is provided on the outer peripheral side; and the movable cup has a distribution portion at the upper end, and is provided as It can move up and down between the outer peripheral wall of the cup body and the inner structure, and the upper surface of the distribution portion is formed by a second inclined surface that gradually decreases toward the outer peripheral side, so that the movable breast cup is raised in a manner to move the cup. The first treatment liquid is guided from between the distribution part and the internal structure to the recovery port of the first treatment liquid, and the second treatment liquid is discharged from the distribution part and the outer periphery so as to lower the movable cup. Between the walls is guided to the recovery port of the second treatment liquid, the cup body is formed with a step at the outer peripheral end of the first inclined surface, and when the movable cup is lowered, the inner peripheral end of the distribution part is lowered Up to the level difference, the upper surface of the distribution part is lower than the surface forming the upper side of the level difference, and the angle of the second inclined surface of the distribution part is larger than the angle of the first inclined surface. 如申請專利範圍第1項之基板處理裝置,其中,前述分配部之前述第2傾斜面,係外周側的傾斜角度比內周側大。 The substrate processing apparatus according to claim 1, wherein the second inclined surface of the distribution portion has a larger inclination angle on the outer peripheral side than on the inner peripheral side. 如申請專利範圍第1或2項之基板處理裝置,其中,前述分配部之內周側端,係被形成為朝向內周側逐漸變薄。 The substrate processing apparatus according to claim 1 or 2, wherein the inner peripheral side end of the distribution portion is formed to gradually become thinner toward the inner peripheral side. 如申請專利範圍第1或2項之基板處理裝置,其中,前述罩杯本體,係具有:凹處,被形成於比前述第1傾斜面的前述階差更內周側;及連通路徑,連通該凹處與排液路徑。 The substrate processing apparatus according to claim 1 or 2, wherein the cup body has: a recess formed on the inner peripheral side of the level difference of the first inclined surface; and a communication path connecting the Recess and drain path. 如申請專利範圍第1或2項之基板處理裝置,其中,在比前述第1傾斜面的前述階差更內周側具有彈性構件,該彈性構件,係具有與前述第1傾斜面連續的上面,並且朝向外周側延伸而覆蓋前述可動罩杯下降時之前述分配部之內周側端的上方。 The substrate processing apparatus according to claim 1 or 2, wherein an elastic member is provided on the inner peripheral side than the level difference of the first inclined surface, and the elastic member has an upper surface continuous with the first inclined surface , and extends toward the outer peripheral side to cover the upper part of the inner peripheral side end of the distribution portion when the movable breast cup is lowered. 一種基板處理方法,係對可繞垂直軸旋轉地被支撐之基板供給第1處理液或第2處理液而處理前述基板,並且以回收罩杯回收來自前述基板的處理液,該基板處理方法,其特徵係,前述回收罩杯,係具備有:罩杯本體,具有:環狀之外周壁,比前述基板大;環狀之內部構造體,由朝向外周側逐漸變低之第1傾斜面形成有上端的外周面;及底壁,前述第1處理液之回收口被設置於內周側,前述第2處理液之回收口被設置於外周側;及可動罩杯,在上端具有分配部,並且被設置為可在前述罩杯本體的前述外周壁與前述內部構造體之間上下移動,該分配部,係上面由朝向外周側逐漸變低之第2傾斜面所形成,前述罩杯本體,係在前述第1傾斜面之外周側端具有階差,前述分配部之前述第2傾斜面的角度,係比前述第1傾斜面的角度大,該基板處理方法,係在以前述第1處理液處理前述基板之際,包含有:使前述可動罩杯上升,並使前述分配部之內周側端位於比前述基板上方的工程;將前述第1處理液供給至前述基板的工程;及 使前述基板旋轉,將該基板上的前述第1處理液從前述分配部與前述內部構造體之間引導至前述第1處理液之回收口的工程,在以前述第2處理液處理前述基板之際,包含有:使前述可動罩杯下降,並使前述分配部之內周側端下降至前述階差,前述分配部之上面變得比形成前述階差之上側的面低的工程;將前述第2處理液供給至前述基板的工程;及使前述基板旋轉,將該基板上的前述第2處理液從前述分配部與前述外周壁之間引導至前述第2處理液之回收口的工程。 A substrate processing method for processing the substrate by supplying a first processing liquid or a second processing liquid to a substrate rotatably supported around a vertical axis, and recovering the processing liquid from the substrate with a recovery cup, the substrate processing method comprising: It is characterized in that the recovered breast cup is provided with: a cup body having: an annular outer peripheral wall, which is larger than the base plate; an outer peripheral surface; and a bottom wall, the recovery port for the first treatment liquid is provided on the inner peripheral side, and the recovery port for the second treatment liquid is provided on the outer peripheral side; and the movable cup has a distribution portion at the upper end, and is provided as It can move up and down between the outer peripheral wall of the cup body and the inner structure. The upper surface of the distribution portion is formed by a second inclined surface that gradually decreases toward the outer peripheral side. The cup body is connected to the first inclined surface. The outer peripheral side end of the surface has a level difference, the angle of the second inclined surface of the distribution portion is larger than the angle of the first inclined surface, and the substrate processing method is performed when the substrate is processed with the first processing liquid. , including: the process of raising the movable cup so that the inner peripheral end of the distribution portion is positioned above the substrate; the process of supplying the first treatment liquid to the substrate; and The process of rotating the substrate, and guiding the first processing liquid on the substrate from between the distribution part and the internal structure to the recovery port of the first processing liquid, is in the process of treating the substrate with the second processing liquid. In this case, it includes the process of lowering the movable cup, lowering the inner peripheral side end of the distribution portion to the level difference, and making the upper surface of the distribution portion lower than the surface forming the upper side of the level difference; 2. The process of supplying the processing liquid to the substrate; and the process of rotating the substrate and guiding the second processing liquid on the substrate from between the distribution part and the outer peripheral wall to the recovery port of the second processing liquid.
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