JP4723631B2 - Development processing method, program, computer storage medium, and development processing apparatus - Google Patents

Description

  The present invention relates to a development processing method, a program, a computer storage medium, and a development processing apparatus for a substrate such as a semiconductor wafer.

  For example, in a photolithography process in a semiconductor device manufacturing process, for example, a resist coating process for applying a resist solution on a semiconductor wafer (hereinafter referred to as “wafer”) to form a resist film, and exposure for exposing the resist film to a predetermined pattern Processing, development processing for developing the exposed resist film, and the like are sequentially performed, and a predetermined resist pattern is formed on the wafer.

  In the development process described above, for example, the wafer is rotated by a spin chuck, and the developer is supplied from the developer nozzle to the center of the wafer to form a developer film on the wafer, thereby developing the wafer. Has been done.

  Further, in this development processing, for example, before supplying the developer onto the wafer, so-called pre-wet is performed to facilitate the diffusion of the developer by supplying, for example, pure water to the central portion of the wafer ( Patent Document 1).

JP 2007-318087 A

  However, when pre-wetting with pure water, since the contact angle of pure water with the resist film on the wafer is large, pure water is likely to scatter around the outer periphery of the wafer, making it difficult to pre-wet the entire wafer surface. .

  Therefore, the inventors tried pre-wetting with a developer having a contact angle with respect to the resist film smaller than that of pure water. However, in such a case, although the entire wafer surface can be pre-wet, in the central portion where the developer is first supplied, the developer is dried between the pre-wetting and the development process, that is, the central portion Since the developer concentration becomes high, the line width of the resist pattern formed on the wafer may be narrower than in the portions other than the central portion.

  The present invention has been made in view of the above points, and an object of the present invention is to uniformly develop a substrate in the substrate surface and improve the uniformity of resist pattern dimensions in the substrate surface.

In order to achieve the above object, the present invention is a method for developing a substrate, the first step of supplying at least a developer to the central portion of the substrate and covering the entire surface of the substrate with the developer, and then the substrate. A second step of supplying pure water to the central portion and driving out the developer supplied in the first step from the entire surface of the substrate, and then supplying the developer to the substrate while rotating the substrate to develop the substrate. In the third step, after supplying the developing solution from the developing solution nozzle to the outer peripheral portion of the substrate, the developing solution nozzle is moved to the central portion of the substrate, It is characterized by supplying a developing solution .

  According to the present invention, first, at least the developing solution can be supplied to the central portion of the substrate, and the entire surface of the substrate can be covered with the developing solution. Thereafter, pure water is supplied to the central portion of the substrate, the developer on the substrate is driven out, and the entire surface of the substrate can be covered with pure water. As a result, the developer supplied for pre-wetting is not dried before the substrate is developed. In addition, since the entire surface of the substrate is covered with pure water, the developer can be diffused smoothly and uniformly on the substrate in the subsequent development process. Therefore, the development processing of the substrate can be performed uniformly within the substrate surface, and the uniformity of the dimension of the resist pattern formed on the substrate within the substrate surface can be improved.

  In the third step, the developer may be supplied to the central portion of the substrate.

  The first step and the second step may be performed while rotating the substrate.

  In the first step, the developer and pure water may be simultaneously supplied to the central portion of the substrate. In the first step, a chemical solution containing a developer and a surfactant may be simultaneously supplied to the central portion of the substrate. In the first step, only the developing solution may be supplied to the central portion of the substrate.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the development processing apparatus in order to cause the development processing apparatus to execute the development processing method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

According to still another aspect of the present invention, there is provided a development processing apparatus for developing a substrate, which includes a developer nozzle that supplies a developer to the substrate, a pure water nozzle that supplies pure water to the substrate, and a substrate. A rotation holding unit for rotating the substrate, a first step of supplying at least the developer to the center of the substrate, and covering the entire surface of the substrate with the developer, and then supplying pure water to the center of the substrate, A second step of expelling the developer supplied in the first step from the entire surface of the substrate, and a third step of developing the substrate by supplying the developer to the substrate while rotating the substrate are performed thereafter. And a control unit that controls the developer nozzle, the pure water nozzle, and the rotation holding unit . In the third step, the control unit supplies the developer from the developer nozzle to the outer peripheral portion of the substrate. After supplying the developer nozzle to the substrate While moving the part, it is characterized by controlling the developer nozzle to supply a developing solution to the substrate.

  In the third step, the control unit may control the developer nozzle so as to supply the developer to the center of the substrate.

  The control unit may control the rotation holding unit so as to execute the first step and the second step while rotating the substrate.

  In the first step, the controller may control the developer nozzle and the pure water nozzle so as to simultaneously supply the developer and pure water to the central portion of the substrate. The developer further includes a chemical nozzle that supplies a chemical solution containing a surfactant to the substrate, and the control unit supplies the developer and the chemical solution simultaneously to the central portion of the substrate in the first step. You may control a nozzle and the said chemical | medical solution nozzle. The controller may control the developer nozzle so that only the developer is supplied to the central portion of the substrate in the first step.

  According to the present invention, the development processing of the substrate can be performed uniformly in the substrate surface, and the uniformity of the dimension of the resist pattern in the substrate surface can be improved.

  Embodiments of the present invention will be described below. FIG. 1 is a longitudinal sectional view showing an outline of the configuration of the development processing apparatus 1 according to this embodiment, and FIG. 2 is a transverse sectional view showing an outline of the configuration of the development processing apparatus 1.

  As shown in FIG. 1, the development processing apparatus 1 has a processing container 10, and a spin chuck 20 as a rotation holding member that holds and rotates the wafer W is provided in the center of the processing container 10. Yes. The spin chuck 20 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. The wafer W can be sucked and held on the spin chuck 20 by suction from the suction port.

  The spin chuck 20 includes a chuck drive mechanism 21 including, for example, a motor, and can be rotated at a predetermined speed by the chuck drive mechanism 21. Further, the chuck drive mechanism 21 is provided with an elevating drive source such as a cylinder, so that the spin chuck 20 can move up and down.

  Around the spin chuck 20, there is provided a cup 22 that receives and collects the liquid scattered or dropped from the wafer W. The cup 22 has an opening larger than the wafer W so that the spin chuck 20 can move up and down on the upper surface. A discharge pipe 23 for discharging the collected liquid and an exhaust pipe 24 for exhausting the atmosphere in the cup 22 are connected to the lower surface of the cup 22.

  As shown in FIG. 2, a rail 30 extending along the Y direction (left and right direction in FIG. 2) is formed on the X direction negative direction (downward direction in FIG. 2) side of the cup 22. The rail 30 is formed, for example, from the outer side of the cup 22 on the Y direction negative direction (left direction in FIG. 2) to the outer side on the Y direction positive direction (right direction in FIG. 2). For example, two arms 31 and 32 are attached to the rail 30.

  The first arm 31 supports a developer nozzle 33 for supplying a developer as shown in FIGS. The first arm 31 is movable on the rail 30 by a nozzle driving unit 34 shown in FIG. As a result, the developer nozzle 33 can move from the standby portion 35 installed outside the cup 22 on the positive side in the Y direction to above the center of the wafer W in the cup 22, and further on the surface of the wafer W. It can move in the radial direction of the wafer W. The first arm 31 can be moved up and down by a nozzle driving unit 34 and the height of the developer nozzle 33 can be adjusted.

  As shown in FIG. 1, a supply pipe 37 communicating with a developer supply source 36 is connected to the developer nozzle 33. A developer is stored in the developer supply source 36. The supply pipe 37 is provided with a supply device group 38 including a valve for controlling the flow of the developing solution, a flow rate adjusting unit, and the like.

  A pure water nozzle 40 that supplies pure water is supported on the second arm 32. The second arm 32 is movable on the rail 30 by the nozzle drive unit 41 shown in FIG. 2, and the pure water nozzle 40 is moved from the standby unit 42 provided on the outer side of the cup 22 on the Y direction negative direction side. It can be moved to above the center of the wafer W in the cup 22. Further, the second arm 32 can be moved up and down by the nozzle drive unit 41, and the height of the pure water nozzle 40 can be adjusted.

  As shown in FIG. 1, a supply pipe 44 that communicates with a pure water supply source 43 is connected to the pure water nozzle 40. Pure water is stored in the pure water supply source 43. The supply pipe 44 is provided with a supply device group 45 including a valve for controlling the flow of pure water, a flow rate adjusting unit, and the like. In the above configuration, the developer nozzle 33 that supplies the developer and the pure water nozzle 40 that supplies the pure water are supported by separate arms, but are supported by the same arm and controlled by movement of the arms. The movement and supply timing of the developer nozzle 33 and the pure water nozzle 40 may be controlled.

  The rotation operation and the vertical operation of the spin chuck 20 described above, the movement operation of the developing solution nozzle 33 by the nozzle driving unit 34, the supply operation of the developing solution of the developing solution nozzle 33 by the supply device group 38, and the pure water nozzle 40 by the nozzle driving unit 41. The operation of the driving system, such as the movement operation of the pure water nozzle 40 by the supply device group 45 and the pure water nozzle 40, is controlled by the control unit 50. The control unit 50 is configured by, for example, a computer including a CPU, a memory, and the like. For example, the development processing in the development processing apparatus 1 can be realized by executing a program stored in the memory. Various programs for realizing development processing in the development processing apparatus 1 are, for example, computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), memory card, and the like. That is stored in the storage medium H and installed in the control unit 50 from the storage medium H is used.

  Next, a development processing process performed in the development processing apparatus 1 configured as described above will be described. FIG. 3 is a flowchart showing main steps of the development processing in the development processing apparatus 1. FIG. 4 schematically shows the state of the liquid film on the wafer W in each step of the development process. In FIG. 4, the resist film formed in advance on the wafer W is not shown.

  The wafer W carried into the development processing apparatus 1 is first sucked and held by the spin chuck 20. Subsequently, the first arm 31 moves the developer nozzle 33 of the standby unit 35 to above the center of the wafer W. At the same time, the pure water nozzle 40 of the standby unit 42 moves to above the center of the wafer W by the second arm 32.

  Next, the chuck driving mechanism 21 is controlled to rotate the wafer W by the spin chuck 20 at, for example, 1000 rpm to 1500 rpm. Simultaneously with the rotation of the wafer W, the developer D from the developer nozzle 33 and the pure water P from the pure water nozzle 40 are respectively supplied to the center of the wafer W as shown in FIG. When the developer D and pure water P are supplied onto the wafer W, a part of the pure water P diffuses concentrically on the wafer W before the developer D and pure water P are mixed. This is because, since the pure water P has a large contact angle with the resist film, a part of the pure water P supplied onto the wafer W diffuses immediately. Subsequently, as shown in FIG. 5, the developer D and the pure water P are mixed on the wafer W to form a mixture C. Thereafter, the pure water P and the mixed liquid C diffuse on the wafer W. At this time, since the contact angle of the mixed liquid C is smaller than that of the pure water P, the mixed liquid C always diffuses on the wafer W behind the pure water P in the diffusion direction (arrow in the figure). That is, the mixed liquid C does not diffuse on the wafer W beyond the pure water P. Thus, as shown in FIG. 4A, the mixed liquid C diffuses over the entire surface of the wafer W (step S1 in FIG. 3).

  When the mixed liquid C diffuses over the entire surface of the wafer W, the first arm 31 moves the developer nozzle 33 from the upper part of the center of the wafer W to the standby unit 35. At this time, the pure water nozzle 40 remains above the center of the wafer W.

  Thereafter, pure water P is supplied from the pure water nozzle 40 to the center of the wafer W as shown in FIG. The rotation speed of the wafer W at this time is the same as that in step S1, and is, for example, 1000 rpm to 1500 rpm. The pure water P is supplied for 1 second to 2 seconds at a flow rate of 1 liter / minute, for example. Then, the pure water P diffuses on the wafer W so as to expel the mixed liquid C, and the entire surface of the wafer W is covered with the pure water P as shown in FIG. 4C (step S2 in FIG. 3). Since the developer component is expelled from the wafer in this way, the development processing of the wafer W is temporarily stopped.

  When the pure water P diffuses over the entire surface of the wafer W, the pure water nozzle 40 is moved from the upper center of the wafer W to the standby unit 42 by the second arm 32. At the same time, the developer nozzle 33 of the standby unit 35 is moved up to the upper periphery of the wafer W by the first arm 31.

  Next, the rotational speed of the wafer W is reduced to, for example, 300 rpm to 1000 rpm, and the developer D is supplied from the developer nozzle 33 to the outer peripheral portion of the wafer W as shown in FIG. Thereafter, the developer nozzle 33 supplies the developer D onto the wafer W while moving to the center of the wafer W. Then, as shown in FIG. 6, the belt-like developer D supplied from the developer nozzle 33 is supplied onto the wafer W in a spiral shape. Then, the developer D is led by the pure water P and diffuses the wafer W smoothly and uniformly, and the entire surface of the wafer W is covered with the developer D as shown in FIG. Thereafter, the developing process for a predetermined time is performed on the wafer W by the developer D supplied to the wafer W (step S3 in FIG. 3).

  When the development processing of the wafer W is completed, the first arm 31 moves the developer nozzle 33 from above the central portion of the wafer W to the standby unit 35. At the same time, the pure water nozzle 40 of the standby unit 42 moves to above the center of the wafer W by the second arm 32. Thereafter, while rotating the wafer W, as shown in FIG. 4 (f), pure water P is supplied from the pure water nozzle 40 to the center of the wafer W, and the wafer W is cleaned (step S4 in FIG. 3). ). In the present embodiment, pure water is used as the rinse liquid for performing the cleaning process on the wafer W, but other rinse liquids may be used.

  Thereafter, the supply of the pure water P from the pure water nozzle 40 is stopped, and the wafer W is accelerated and rotated to dry and remove the pure water P on the wafer W. Thus, a series of development processing of the wafer W is completed.

  According to the above embodiment, in step S1, the developing solution D and pure water P are supplied to the central portion of the wafer W, and the entire surface of the wafer W is covered with the mixed solution C of the developing solution D and pure water P. it can. Thereafter, in step S <b> 2, pure water P is supplied to the central portion of the wafer W, the mixed liquid C on the wafer W is driven out, and the entire surface of the wafer W can be covered with the pure water P. As a result, the developer supplied for pre-wetting as in the prior art is not dried before the development processing of the wafer W in step S3. Moreover, since the entire surface of the wafer W is covered with pure water P, the developing solution D can be diffused smoothly and uniformly on the wafer W in the development process. Therefore, the development processing of the wafer W can be performed uniformly within the wafer surface, and the dimension of the resist pattern formed on the wafer W, for example, the uniformity of the line width within the wafer surface can be improved.

  In step S <b> 1, the mixed solution C always diffuses on the wafer W behind the pure water P in the diffusion direction. Further, since the pure water P has a large contact angle with the resist film, the pure water P supplied to the central portion of the wafer W diffuses concentrically on the wafer W. If it does so, the pure water P and the liquid mixture C will be spread | diffused smoothly to the concentric form of a board | substrate in this order. Therefore, the mixed liquid C can be uniformly applied in the wafer surface, and the concentration of the developer component in the wafer surface can be made uniform.

  In step S3, when developing the wafer W, the developer D is supplied from the developer nozzle 33 to the outer periphery of the wafer W, and then the wafer is moved while the developer nozzle 33 is moved to the center of the wafer W. Developer D was supplied to W. Accordingly, the belt-like developer D can be spirally supplied onto the wafer W, and the development processing time can be shortened by increasing the moving speed of the developer nozzle 33. Furthermore, the supply amount of the developer D can be reduced by shortening the development processing time.

  In the above embodiment, after supplying the developing solution D from the developing solution nozzle 33 to the outer peripheral portion of the wafer W in the step S3, the developing solution nozzle 33 is moved to the central portion of the wafer W, and then the wafer W is moved. Although the developing solution D is supplied, the developing solution nozzle 33 may be moved directly to the central portion of the wafer W, and the developing solution D may be supplied from the developing solution nozzle 33 to the central portion of the wafer W. Since other steps S1 and S2 are the same as those in the above embodiment, the description thereof is omitted. Even in such a case, in the development process, the developer D can be diffused smoothly and uniformly on the wafer W, and the development process of the wafer W can be performed uniformly within the wafer surface.

  In the above embodiment, the developer D and the pure water P are simultaneously supplied to the central portion of the wafer W in step S1, but only the developer D may be supplied to the central portion of the wafer W. . Other steps S2 and S3 are the same as those in the above embodiment, and thus the description thereof is omitted. Even in such a case, in the development process, the developer D can be diffused smoothly and uniformly on the wafer W, and the development process of the wafer W can be performed uniformly within the wafer surface.

  Further, in step S1, a chemical solution containing the developer D and a surfactant may be simultaneously supplied to the central portion of the wafer W. In such a case, the development processing apparatus 1 is provided with a chemical nozzle 60 that supplies a chemical to the wafer W as shown in FIGS. The chemical nozzle 60 is supported by a third arm 61 attached to the rail 30. The third arm 61 is movable on the rail 30 by the nozzle driving unit 62. As a result, the chemical nozzle 60 passes from the standby portion 63 provided on the outer side of the cup 22 in the Y direction positive direction to the upper side of the center of the wafer W in the cup 22 and on the negative direction side of the cup 22 in the Y direction. It is possible to move to the standby unit 64 provided outside. The standby part 63 is provided between the outer side of the cup 22 on the Y direction positive direction side and the standby part 35, and the standby part 64 is provided between the outer side of the cup 22 on the Y direction negative direction side and the standby part 42. It has been. Further, the third arm 61 can be moved up and down by the nozzle driving unit 62, and the height of the chemical nozzle 60 can be adjusted. A supply pipe 66 communicating with a chemical solution supply source 65 is connected to the chemical solution nozzle 60. A chemical liquid containing a surfactant is stored in the chemical liquid supply source 65. The supply pipe 66 is provided with a supply device group 67 including a valve for controlling the flow of the chemical solution, a flow rate adjusting unit, and the like. In the above configuration, the developer nozzle 33, the pure water nozzle 40, and the chemical nozzle 60 are supported by separate arms, but are supported by the same arm, and by controlling the movement of the arms, the developer nozzle 33, The movement and supply timing of each of the pure water nozzle 40 and the chemical solution nozzle 60 may be controlled.

  In step S 1, the first arm 31 moves the developer nozzle 33 of the standby unit 35 to above the center of the wafer W, and the third arm 61 moves the chemical nozzle 60 of the standby unit 64 to the wafer W. Move to above the center. Thereafter, the developing solution D from the developing solution nozzle 33 and the chemical solution from the chemical solution nozzle 60 are supplied to the center of the wafer W, respectively. Other steps S2 and S3 are the same as those in the above embodiment, and thus the description thereof is omitted.

  Even in such a case, the entire surface of the wafer W can be covered with the mixed solution of the developer D and the chemical solution in step S1. In the subsequent step S2, since the entire surface of the wafer W can be covered with pure water P, the developer supplied for prewetting is not dried as in the prior art, and the developer on the wafer W in the development process. D can be diffused smoothly and uniformly. Therefore, the development processing of the wafer W can be performed uniformly within the wafer surface.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. Those skilled in the art within the scope of the spirit as set forth in the appended claims, it is intended to cover various modifications and changes naturally fall within the technical scope of the present invention also for their It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

  Hereinafter, the uniformity of the line width of the resist pattern formed on the wafer when the development processing method of the present invention is used will be described in comparison with the case where the conventional development processing method is used. When the development processing method of the present invention was used, the wafer was developed by the method shown in FIGS. 3 and 4 using the development processing apparatus 1 previously shown in FIGS. In the case of using the conventional development processing method, after supplying the developer and pure water to the wafer, the developer is supplied to the wafer for development processing, and the wafer is processed before the development processing as in the present invention. Pure water was not supplied. In this example, a KrF resist having high development sensitivity was used as the resist solution.

  FIG. 9 shows the result of developing under such conditions and measuring the line width of the resist pattern on the wafer. FIG. 9A shows the case where the development processing method of the present invention is used, and FIG. 9B shows the case where the conventional development processing method is used. The horizontal axis in FIG. 9 indicates the distance from the center position of the wafer. The vertical axis in FIG. 9 indicates the line width of the resist pattern.

  As shown in FIG. 9B, when the conventional development processing method is used, the line width of the resist pattern cannot be made uniform in the wafer surface. On the other hand, as shown in FIG. 9A, when the development processing method of the present invention was used, the line width of the resist pattern could be made uniform within the wafer surface. The 3 sigma when using the conventional development processing method was 5.29 nm, whereas the 3 sigma when using the development processing method of the present invention was 2.25 nm.

  As described above, when the development processing method of the present invention is used, the wafer development processing can be performed uniformly within the wafer surface as compared with the conventional case, and the line width of the resist pattern formed on the wafer is within the wafer surface. It was found that the uniformity in the can be significantly improved.

  The present invention is useful when developing a substrate such as a semiconductor wafer.

It is a longitudinal cross-sectional view which shows the outline of a structure of the image development processing apparatus concerning this Embodiment. It is a cross-sectional view showing the outline of the configuration of the development processing apparatus according to the present embodiment. It is a flowchart which shows the main processes of a development processing process. It is explanatory drawing which showed typically the state of the liquid film on the wafer in each process of a development processing process. It is explanatory drawing which showed typically the state of the liquid film on the wafer in process S1 of a development processing process. It is explanatory drawing which showed typically the state of the liquid film on the wafer in process S3 of a development processing process. It is a longitudinal cross-sectional view which shows the outline of a structure of the image development processing apparatus concerning other embodiment. It is a cross-sectional view which shows the outline of a structure of the development processing apparatus concerning other embodiment. In an Example, it is the graph which showed the measurement result of the line width of the resist pattern formed on a wafer after image development processing, (a) is a case where the image development processing method of this invention is used, (b) is conventional. This is the case of using the development processing method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Development processing apparatus 20 Spin chuck 33 Developer nozzle 40 Pure water nozzle 50 Control part 60 Chemical solution nozzle C Mixed solution D Developer P Pure water W Wafer

Claims (10)

A method for developing a substrate,
A first step of supplying at least a developer to the center of the substrate and covering the entire surface of the substrate with the developer;
Then, a second step of supplying pure water to the central portion of the substrate and driving off the developer supplied in the first step from the entire surface of the substrate;
Thereafter, while rotating the substrate by supplying a developing solution to the substrate, possess a third step of the substrate to a developing process, a
In the third step, after supplying the developing solution from the developing solution nozzle to the outer peripheral portion of the substrate, the developing solution is supplied to the substrate while moving the developing solution nozzle to the central portion of the substrate . Development processing method. The development processing method according to claim 1, wherein in the first step, a developing solution and pure water are simultaneously supplied to a central portion of the substrate . A method for developing a substrate,
A first step of supplying at least a developer to the center of the substrate and covering the entire surface of the substrate with the developer;
Then, a second step of supplying pure water to the central portion of the substrate and driving off the developer supplied in the first step from the entire surface of the substrate;
Thereafter, a third step of supplying a developer to the substrate while rotating the substrate and developing the substrate,
In the first step, a development processing method is characterized in that a chemical solution containing a developer and a surfactant is simultaneously supplied to the central portion of the substrate . The development processing method according to claim 1, wherein the first step and the second step are performed while rotating the substrate . A program that operates on a computer of a control unit that controls the development processing apparatus in order to cause the development processing apparatus to execute the development processing method according to claim 1. A readable computer storage medium storing the program according to claim 5. A development processing apparatus for developing a substrate,
A developer nozzle for supplying a developer to the substrate;
A pure water nozzle for supplying pure water to the substrate;
A rotation holding unit for holding the substrate and rotating the substrate;
A first step of supplying at least a developing solution to the central portion of the substrate and covering the entire surface of the substrate with the developing solution, and then supplying pure water to the central portion of the substrate and supplying the developing solution supplied in the first step to the substrate. The developer nozzle and the pure water nozzle so as to perform a second step of expelling from the entire surface and a third step of supplying the developer to the substrate while rotating the substrate and developing the substrate. And a control unit for controlling the rotation holding unit,
In the third step, the control unit supplies the developer to the substrate while supplying the developer from the developer nozzle to the outer peripheral portion of the substrate and then moving the developer nozzle to the center of the substrate. The developer nozzle is controlled as described above . 8. The control unit according to claim 7, wherein the control unit controls the developer nozzle and the pure water nozzle so that the developer and pure water are simultaneously supplied to a central portion of the substrate in the first step. The development processing apparatus according to the description . A development processing apparatus for developing a substrate,
A developer nozzle for supplying a developer to the substrate;
A pure water nozzle for supplying pure water to the substrate;
A chemical nozzle for supplying a chemical solution containing a surfactant to the substrate;
A rotation holding unit for holding the substrate and rotating the substrate;
A first step of supplying at least a developing solution to the central portion of the substrate and covering the entire surface of the substrate with the developing solution, and then supplying pure water to the central portion of the substrate and supplying the developing solution supplied in the first step to the substrate. The developer nozzle and the pure water nozzle so as to perform a second step of expelling from the entire surface and a third step of supplying the developer to the substrate while rotating the substrate and developing the substrate. And a control unit for controlling the rotation holding unit,
In the first step, the control unit controls the developing solution nozzle and the chemical solution nozzle so as to simultaneously supply the developing solution and the chemical solution to the central portion of the substrate . The said control part controls the said rotation holding | maintenance part to perform the said 1st process and the said 2nd process, rotating a board | substrate, The said any one of Claims 7-9 characterized by the above-mentioned. Development processing equipment.

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